Three-axis Hall sensing structure

Abstract

The invention relates to the technical field of magnetic sensing, in particular to a three-axis Hall sensing structure, which comprises a plurality of first Hall elements arranged in pairs and is used for detecting a planar two-dimensional magnetic field by a differential detection method. Part of the first Hall elements are arranged at intervals in pairs in the first direction, part of the first Hall elements are arranged at intervals in pairs in the second direction, the first direction and the second direction are orthogonal, and a reserved space is formed in the middle of a preset pattern formed by the first Hall elements; the at least one second Hall element is used for responding to a magnetic field in a third direction, the third direction is orthogonal to the plane, and an induction area of the second Hall element is located in the middle of the reserved space; and the first magnetic gathering layer is stacked on the plurality of first Hall elements, the orthographic projection of the first magnetic gathering layer on the plane at least partially covers the area of the preset pattern, and the first magnetic gathering layer is provided with an open hole for exposing the second Hall element. The device has the advantages of integration, miniaturization, low cost, interference resistance, high inter-axis isolation degree and the like.

Description

Technical Field

[0001] This application relates to the field of magnetic sensing technology, and particularly to a three-axis Hall sensing structure. Background Art

[0002] A three-axis Hall sensing structure is a semiconductor structure capable of detecting magnetic fields in three-dimensional space. It usually includes multiple independent Hall effect sensing elements, which are respectively used to detect the magnetic field components on the X, Y, and Z axes, and is applicable to application scenarios requiring precise position detection, such as robotics, automotive electronics, industrial automation, and consumer electronics. Existing 3D Hall technology has an inter-axis crosstalk problem, which strongly interferes with the Z-axis magnetic field detection, resulting in low detection accuracy and sensitivity. To reduce the influence of crosstalk, related technologies set the Z-axis Hall element at a position far from the planar magnetic field Hall element to alleviate the interference of planar magnetic field detection on Z-axis magnetic field detection. However, this method results in low integration of the sensing structure, wastes chip area, and cannot add a magnetic concentrating structure, leading to too low sensitivity of Z-axis detection. Summary of the Invention

[0003] In view of the above problems of the prior art, this application provides a three-axis Hall sensing structure, and the specific technical solution is as follows: On the one hand, this application provides a three-axis Hall sensing structure, and the three-axis Hall sensing structure includes: Multiple first Hall elements arranged in pairs, which are used to detect the planar two-dimensional magnetic field by the differential detection method. Some of the first Hall elements are arranged in pairs at intervals along the first direction, and some of the first Hall elements are arranged in pairs at intervals along the second direction. The first direction and the second direction are orthogonal, and a reserved space is provided in the middle of the preset pattern formed by the distribution of the multiple first Hall elements; At least one second Hall element, which is used to respond to the magnetic field in the third direction, and the third direction is orthogonal to the plane. The sensing area of the second Hall element is located in the middle of the reserved space; A first magnetic concentrating layer, which is stacked on the multiple first Hall elements and at least part of the orthographic projection of the first magnetic concentrating layer on the plane covers the area of the preset pattern. The first magnetic concentrating layer has an opening exposing the second Hall element.

[0004] In some embodiments, the multiple first Hall elements form a planar Hall differential detection assembly.

[0005] In some embodiments, the sensing areas of the multiple first Hall elements and the sensing area of one of the second Hall elements in at least one second Hall element are coplanar.

[0006] In some embodiments, the central axis of the sensing of the second Hall element is coaxial with the central axis of the preset pattern.

[0007] In some embodiments, each of the first Hall elements arranged along the first direction forms at least one first Hall pair, and the two first Hall elements in the first Hall pair are symmetrically arranged about the second direction axis.

[0008] In some embodiments, each of the first Hall elements arranged along the second direction forms at least one second Hall pair, and the two first Hall elements in the second Hall pair are symmetrically arranged about the first direction axis.

[0009] In some embodiments, the symmetry centers of each of the first Hall pairs coincide with the symmetry centers of each of the second Hall pairs.

[0010] In some embodiments, the first Hall pair and / or the second Hall pair are differentially connected in parallel.

[0011] In some embodiments, each of the first Hall elements in the first direction is rotationally symmetrically arranged with respect to each of the first Hall elements in the second direction.

[0012] In some embodiments, the sensing region of the first Hall element arranged along the first direction is a structure that is axisymmetric about the first direction and / or the second direction. In some embodiments, the sensing region of the first Hall element arranged along the second direction is a structure that is axisymmetric about the second direction and / or the first direction.

[0013] In some embodiments, the sensing region of the second Hall element is a structure that is axisymmetric about the first direction and axisymmetric about the second direction.

[0014] In some embodiments, the sensing region of the first Hall element is a rotationally symmetric structure.

[0015] In some embodiments, the sensing region of the second Hall element is a rotationally symmetric structure.

[0016] In some embodiments, the orthographic projection shape of the first magnetic focusing layer is a figure that is axisymmetric about the first direction and the second direction; and / or, the orthographic projection shape of the first magnetic focusing layer is a rotationally symmetric figure.

[0017] In some embodiments, the center of the orthographic projection of the first magnetic focusing layer on the plane coincides with the center of the preset figure.

[0018] In some embodiments, the opening is located in the middle of the first magnetic focusing layer, and the center of the orthographic projection of the opening on the plane coincides with the sensing center of the second Hall element.

[0019] In some embodiments, the positive projection of the first magnetic focusing layer on the plane covers the induction center of the first Hall element. For the first Hall element arranged in the first direction, the outer edge of the positive projection of the first magnetic focusing layer on the plane in the first direction exceeds the length of the induction region of the first Hall element by a first preset ratio of the length of the induction region in the first direction, and does not exceed the first preset ratio of the length of the induction region of the first Hall element in the first direction. The first preset ratio is 1 / 4 - 2 / 5. For the first Hall element arranged in the second direction, the outer edge of the positive projection of the first magnetic focusing layer on the plane in the second direction exceeds the length of the induction region of the first Hall element by a second preset ratio of the length of the induction region in the second direction, and does not exceed the second preset ratio of the length of the induction region of the first Hall element in the second direction. The second preset ratio is 1 / 4 - 2 / 5.

[0020] In some embodiments, the thickness of the first magnetic focusing layer is 5 - 500 μm.

[0021] In some embodiments, the first magnetic focusing layer is a stack formed on the plurality of first Hall elements based on a lithography process.

[0022] In some embodiments, the opening on the first magnetic focusing layer is a figure that is axisymmetric about the first direction and the second direction; and / or, the opening on the first magnetic focusing layer is a rotationally symmetric figure.

[0023] In some embodiments, the opening exposes at least part of the electrode structure of the second Hall element, and at least part of the electrode wiring of the second Hall element is led out from the opening.

[0024] In some embodiments, the interval between the edge of the positive projection of the opening on the plane and the electrode structure exposed by the opening is 10 - 100 μm.

[0025] In some embodiments, the area of the opening does not exceed a third preset ratio of the total area of the first magnetic focusing layer. The third preset ratio is 1 / 5 - 1 / 3.

[0026] In some embodiments, the electrode structure of the second Hall element includes a second working positive electrode and a second working negative electrode; Any one of the second working positive electrode and the second working negative electrode is connected collinearly with the same-polarity working electrode of the first Hall element.

[0027] In some embodiments, the magnetic field component gain corresponding to the Hall voltage signal in the first direction is the same as the magnetic field component gain corresponding to the Hall voltage signal in the second direction.

[0028] In some embodiments, the magnetic field component gain corresponding to the Hall voltage signal in the first direction, the magnetic field component gain corresponding to the Hall voltage signal in the second direction, and the magnetic field component gain corresponding to the Hall voltage signal in the third direction are the same.

[0029] In some embodiments, the three-axis Hall sensing structure further includes: A second magnetic focusing layer, stacked on the sensing region of the second Hall element and spaced from the first magnetic focusing layer, for magnetic focusing of the magnetic field in the third direction.

[0030] In some embodiments, the center of the orthographic projection of the second magnetic focusing layer on the plane coincides with the sensing center of the second Hall element.

[0031] In some embodiments, the shape of the orthographic projection of the second magnetic focusing layer on the plane is a figure axisymmetric about the first direction and the second direction.

[0032] In some embodiments, the shape of the orthographic projection of the second magnetic focusing layer on the plane is a rotationally symmetric figure.

[0033] In some embodiments, the thickness of the second magnetic focusing layer is 5 - 500 μm.

[0034] In some embodiments, the second magnetic focusing layer is a stack formed on the second Hall element based on a lithography process.

[0035] On the other hand, the present application provides a three-axis Hall chip, which includes the three-axis Hall sensing structure as described above.

[0036] On the other hand, the present application provides an integrated circuit, which includes the three-axis Hall sensing structure as described above.

[0037] On the other hand, the present application provides an electronic device, which includes the three-axis Hall sensing structure as described above.

[0038] Based on the above technical solutions, the present application has the following beneficial effects: The three-axis Hall sensing structure of the present application is provided with a plurality of pairs of first Hall elements, which are arranged at intervals in pairs along orthogonal first and second directions to form a planar magnetic field detection device capable of performing Hall differential detection; moreover, a reserved space is provided in the middle of the preset pattern formed by the distribution of the plurality of first Hall elements for integrally arranging at least one second Hall element to respond to the magnetic field in the third direction and realize 3D magnetic field detection. By arranging the second Hall element in the middle of the reserved space to make its distance from the first Hall elements in each direction similar or equal, a good inter-axis isolation effect can be achieved, and at the same time, it is convenient for the calibration and calculation of magnetic field detection in each direction; in addition, the structure of the present application also has a first magnetic focusing layer stacked on the plurality of first Hall elements, and the orthographic projection of the first magnetic focusing layer on the plane at least partially covers the area of the preset pattern to realize the adjustment and gain of the planar magnetic field, improve the sensitivity and accuracy of planar magnetic field detection, and realize the inter-axis isolation between the third direction and planar magnetic field detection by opening holes in the first magnetic focusing layer to expose the second Hall element, making the three-axis Hall sensing structure have the advantages of integration, miniaturization, low cost, anti-interference and high inter-axis isolation degree. BRIEF DESCRIPTION OF THE DRAWINGS

[0039] In order to more clearly illustrate the technical solutions of the present application, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings in the following description are only some embodiments of the present application, and those of ordinary skill in the art can also obtain other drawings without creative efforts based on these drawings.

[0040] Figure 1 : Structural top view of a three-axis Hall sensing structure provided by an embodiment of the present application; Figure 2 : Structural top view of another three-axis Hall sensing structure provided by an embodiment of the present application; Figure 3 : Structural top view of another three-axis Hall sensing structure provided by an embodiment of the present application; Figure 4 : Structural top view of another three-axis Hall sensing structure provided by an embodiment of the present application; Reference numerals: 101 - First Hall element, 102 - Second Hall element, 103 - First magnetic focusing layer, 104 - Opening, 105 - Electrode structure, 106 - Second magnetic focusing layer, 107 - Pad. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0041] Next, the technical solutions in the embodiments of the present application will be clearly and completely described in conjunction with the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present application without creative efforts shall fall within the protection scope of the present application.

[0042] It should be noted that in the description of the present application, for the following defined terms, unless a different definition is given elsewhere in the claims or in this specification, these definitions shall apply. All numerical values, whether or not explicitly indicated, are hereby defined as being modified by the term "about". The term "about" generally refers to a numerical range that a person of ordinary skill in the art would consider equivalent to the stated value to produce substantially the same properties, functions, results, etc. A numerical range indicated by a low value and a high value is defined as including all the numerical values included in that numerical range and all the sub-ranges included in that numerical range.

[0043] It should be noted that in the description of the present application, the terms "first", "second", etc. are used to distinguish similar objects and do not necessarily have to be used to describe a specific order or sequence. It should be understood that the data used in this way can be interchanged under appropriate circumstances so that the embodiments of the present application described here can be implemented in an order other than those illustrated or described here. In addition, the terms "comprising" and "having" and any variations thereof are intended to cover non-exclusive inclusion.

[0044] It should be noted that in the description of the present application, the meanings of the terms "on", "above", "on top of", "above" should be interpreted in the broadest sense, meaning that the description containing these terms is interpreted as "a component can be arranged on another component in a directly contacting manner, or there can be intermediate components or layers between the components". In addition, for the convenience of description, the present application may also use spatial relative terms such as "under", "below", "beneath", "on", "above", "upper", "lower", etc. to describe the relationship between one element or component and another element or component shown in the drawings. In addition to the orientations described in the figures, the spatial relative terms are also intended to cover different orientations of the device during use or operation. The device can be oriented in other ways (rotated 90° or in other orientations), and the spatial relative descriptive terms used in the present application can be correspondingly interpreted in the same way.

[0045] As used in this application, the term "layer" refers to a portion of a material that includes a region having a certain thickness. The layer may extend over the entire underlying or overlying structure, or may extend over a partial extent of the underlying or overlying structure. In addition, the layer may be a region of a homogeneous or inhomogeneous continuous structure, and its thickness is less than the thickness of the continuous structure. For example, the layer may be located between the top and bottom surfaces of the continuous structure or between any pair of horizontal planes therebetween. The layer may extend horizontally, vertically, and / or along a conical surface. A layer may include multiple layers.

[0046] It should be understood that the terms "consistent", "perpendicular", "orthogonal", etc. used in this application refer to being substantially consistent or substantially perpendicular, etc. that meet the process error, and do not refer to absolute consistency or absolute perpendicularity in the physical sense.

[0047] It should be understood that the "surface", "plane" used in this application, such as "first surface", "second surface", etc. refer to the XY plane for magnetic field detection, corresponding to the XY plane for Hall detection of the three-axis Hall sensing structure. The "plane magnetic field" refers to the magnetic field in the direction parallel to the XY plane. The "first direction" and the "first direction" refer to the X direction or the Y direction, and the "thickness direction", "longitudinal direction" or "third direction" refer to the Z direction relative to the XY plane.

[0048] The following Figure 1 -5 introduces the three-axis Hall sensing structure of this application. It can be understood that the three-axis Hall sensing structure in the drawings is only the technical solution of a specific embodiment of this application. The three-axis Hall sensing structure of this application may include fewer or more structural features, and is not limited to the device structure described in the drawings.

[0049] Refer to Figure 1 -5. The three-axis Hall sensing structure includes a plurality of first Hall elements 101 arranged in pairs, which are used to detect the planar two-dimensional magnetic field by a differential detection method. Some of the first Hall elements 101 are arranged at intervals in pairs along the first direction, and some of the first Hall elements 101 are arranged at intervals in pairs along the second direction. The first direction and the second direction are orthogonal, and a reserved space is provided in the middle of the preset pattern formed by the distribution of the plurality of first Hall elements 101.

[0050] Specifically, the plane refers to the Hall plane where the plurality of first Hall elements 101 perform planar magnetic field detection. The first direction is the X direction in the plane, and the second direction is the Y direction in the plane, or the first direction is the Y direction in the plane, and the second direction is the X direction in the plane. The number of the plurality of first Hall elements 101 is an even number, at least including four first Hall elements 101, forming at least one first Hall pair and at least one second Hall pair. The first Hall pair is arranged along the first direction, and the second Hall pair is arranged along the second direction. The reserved space is formed between the two first Hall elements 101 of the first Hall pair and between the two first Hall elements 101 of the second Hall pair.

[0051] Specifically, the preset pattern refers to the pattern formed by arranging the first Hall elements 101. Preferably, the preset pattern is a cross shape, and the first Hall elements 101 in the first direction and the second direction are arranged in a cross shape, and the reserved space is located in the middle area of the cross shape.

[0052] Specifically, the first Hall element 101 is an element capable of detecting a magnetic field based on the Hall effect. A plurality of first Hall elements 101 form a planar Hall differential detection assembly. The first Hall elements 101 in the first direction are used to differentially detect the magnetic field component in the first direction, such as the X-axis magnetic field component, and the first Hall elements 101 in the second direction are used to differentially detect the magnetic field component in the second direction, such as the Y-axis magnetic field component.

[0053] In a possible implementation manner, the first Hall elements 101 arranged along the first direction form at least one first Hall pair, and the two first Hall elements 101 in the first Hall pair are symmetrically arranged about the second direction axis. In this way, the calibration and detection complexity of the magnetic field component detection in the first direction are reduced through the symmetric arrangement, and the magnetic field detection accuracy is improved.

[0054] Specifically, when there are two or more first Hall pairs, the first Hall pairs are arranged coaxially in sequence along the first direction, and the symmetry axes of the first Hall pairs coincide. Each first Hall pair performs backup detection for each other. By respectively outputting their own Hall voltage signals through the first Hall pairs in the first direction, the result verification, detection test, etc. of any first Hall pair can be realized, and the accuracy of the magnetic field detection in the first direction is improved.

[0055] In a possible implementation manner, the first Hall elements 101 arranged along the second direction form at least one second Hall pair, and the two first Hall elements 101 in the second Hall pair are symmetrically arranged about the first direction axis. In this way, the calibration and detection complexity of the magnetic field component detection in the second direction are reduced through the symmetric arrangement, and the magnetic field detection accuracy is improved.

[0056] Specifically, when there are two or more second Hall pairs, the second Hall pairs are arranged coaxially in sequence along the second direction, and the symmetry axes of the second Hall pairs coincide. Each second Hall pair performs backup detection for each other. By respectively outputting their own Hall differential voltage signals through the second Hall pairs in the second direction, the result verification, detection test, etc. of any second Hall pair can be realized, and the accuracy of the magnetic field detection in the second direction is improved.

[0057] In a possible implementation, the symmetry center of each first Hall pair coincides with the symmetry center of each second Hall pair, that is, the intersection of the symmetry axis of the first Hall pair and the symmetry axis of the second Hall pair is the center of the preset pattern. By setting the first Hall pair and the second Hall pair symmetrically and with the centers overlapping, accurate detection of the magnetic field in the first direction and the second direction can be achieved, and signal calibration and output calculation are simple.

[0058] In a possible implementation, the structure and material of the sensing area of ​​the two first Hall elements 101 in the first Hall pair are consistent, and the structure and material of the sensing area of ​​the two first Hall elements 101 in the second Hall pair are consistent. In a preferred implementation, the structure and material of the sensing area of ​​each first Hall element 101 in the first direction are consistent, and the structure and material of the sensing area of ​​each first Hall element 101 in the second direction are consistent. More preferably, the structure and material of the sensing area of ​​each first Hall element 101 are consistent. The sensing area refers to the effective device area in the Hall element for responding to the magnetic field, such as Figure 3 The blue cross area is shown. The same structure and material settings make the Hall coefficients of the Hall elements consistent, which is convenient for magnetic field detection calibration and calculation.

[0059] In one embodiment, reference Figure 1 The three-axis Hall sensing structure includes Hall A and Hall B arranged from left to right along the X axis, and Hall C and Hall D arranged from top to bottom along the Y axis. Hall A and Hall B are arranged symmetrically along the X direction to form a first Hall pair, and Hall C and Hall D are arranged symmetrically along the Y direction to form a second Hall pair, arranged in a cross shape, respectively detecting the magnetic field in the X and Y directions, and the X direction is orthogonal to the Y direction. The center point O of the cross is the symmetry center of Hall A and Hall B, and the symmetry center of Hall C and Hall D, and the structure of each first Hall element 101 is consistent. It can be understood that, taking the first direction as an example, if the first direction also includes another first Hall pair formed by Hall E and Hall F, Hall E and Hall F are symmetrical about the second direction, and the symmetry center is point O, Hall E can be located on the side of Hall A away from point O, and Hall F can be located on the side of Hall B away from point O.

[0060] It should be noted that the symmetrical design of the first Hall elements 101 in the first direction and the first Hall elements 101 in the second direction is preferably symmetrical between the sensing areas of the first Hall elements 101 in the first direction and the second direction, such as the sensing areas of the two first Hall elements 101 of the first Hall pair are symmetrical about the second direction, and the sensing areas of the two first Hall elements 101 of the second Hall pair are symmetrical about the first direction.

[0061] In a possible implementation, the first Hall pair and / or the second Hall pair are differentially connected in parallel. In this way, not only the interference of the Hall voltage signals in the first direction and the second direction is reduced, but also the zero-offset and zero-drift effects of the signals are reduced. In one embodiment, the three-axis Hall sensing structure further includes pads 107. Refer to Figure 2 , between Hall A and Hall B, and between Hall C and Hall D are differentially connected in parallel. The working positive electrodes of Hall A and Hall B are connected to the same pad +, the working positive electrodes of Hall C and Hall D are connected to the same pad +, and the working negative electrodes of Hall A - D are connected to the same pad -. The pads 107A, B, C, and D in the figure are respectively connected to the signal electrodes of Hall A - D to output Hall voltage signals VAB and VCD.

[0062] In a possible implementation, the sensing region of the first Hall element 101 arranged along the first direction is a structure that is axisymmetric with respect to the first direction and / or the second direction.

[0063] In a possible implementation, the sensing region of the first Hall element 101 arranged along the second direction is a structure that is axisymmetric with respect to the second direction and / or the first direction.

[0064] Specifically, the sensing region refers to the device region in the Hall element that is sensitive to the magnetic field and can form a magnetic induction signal. By setting the first Hall element 101 to be symmetric with respect to the first direction and / or the second direction, the magnetic field intensity induced when the sensing region detects the magnetic field component in the first direction or the second direction has symmetry and consistency, improving the detection accuracy.

[0065] In a preferred implementation, the sensing region of the first Hall element 101 is a rotationally symmetric structure, and the rotation angle of the rotational symmetry can be 90°. More preferably, the sensing region of the first Hall element 101 can simultaneously satisfy symmetry with respect to the first direction and / or the second direction, and rotational symmetry in the first direction and the second direction, that is, it is completely symmetric and consistent in the first direction and the second direction. Exemplarily, the sensing region of the first Hall element 101 can be in the shape of a cross as in Figure 1 , or can be a circular shape or other shapes that satisfy the above symmetry conditions, which will not be enumerated here.

[0066] In a preferred implementation, the first Hall elements 101 in the first direction and the first Hall elements 101 in the second direction are rotationally symmetrically arranged, that is, the first Hall elements 101 in the second direction can coincide with the first Hall elements 101 in the first direction after rotating 90°. The structures and materials of the first Hall elements 101 in the first direction and the first Hall elements 101 in the second direction are the same, and the arrangement positions and spacings of the first Hall elements 101 in the first direction are the same as those of the first Hall elements 101 in the second direction. Correspondingly, the preset pattern is a rotationally symmetric structure. In this way, the preparation of the first Hall element 101 and the magnetic field detection calculation are simplified.

[0067] The three-axis Hall sensing structure further includes at least one second Hall element 102 for responding to the magnetic field in the third direction, which is orthogonal to the plane. The sensing area of the second Hall element 102 is located in the middle of the reserved space.

[0068] Specifically, the third direction may be the Z direction perpendicular to the XY plane, and the reserved space in the middle of the preset pattern can accommodate the second Hall element 102. Exemplarily, referring to Figure 1 , the sensing area of the second Hall element 102 may be in a cross shape.

[0069] In a possible implementation manner, the sensing areas of the multiple first Hall elements 101 and the sensing area of one of the at least one second Hall element 102 are coplanar. The coplanar second Hall element 102 and each first Hall element 101 form a planar 3D magnetic field detection component. In the case where there are two or more second Hall elements 102, the second Hall elements 102 are arranged at intervals along the third direction. By outputting Hall detection signals through the multiple second Hall elements 102, result verification and detection tests of any second Hall element 102 are realized, etc., improving the accuracy of magnetic field detection in the third direction.

[0070] In a possible implementation manner, the central axis of the sensing of the second Hall element 102 is coaxial with the central axis of the preset pattern. The second Hall element 102 is arranged on the central axis of the preset pattern, making the first Hall elements 101 in the first direction and the second direction symmetric about the second Hall element 102, reducing the interference of planar magnetic field detection on Z-axis magnetic field detection.

[0071] In a possible implementation manner, the sensing area of the second Hall element 102 is a structure that is axisymmetric about the first direction and axisymmetric about the second direction; in a preferred implementation manner, the sensing area of the second Hall element 102 is further set as a rotationally symmetric structure.

[0072] The three-axis Hall sensing structure further includes a first magnetic concentrating layer 103, which is stacked on the multiple first Hall elements 101 and at least part of the orthographic projection of the first magnetic concentrating layer 103 on the plane covers the area of the preset pattern. The first magnetic concentrating layer 103 has an opening 104 exposing the second Hall element 102.

[0073] Specifically, the first magnetic concentrating layer 103 is stacked on each first Hall element 101, covering at least part of the area of the first Hall element 101 to achieve the magnetic concentrating effect of the planar magnetic field, improving the magnetic field detection gain in the first direction and the second direction, and further improving the sensitivity of the first direction magnetic field component detection of the first Hall pair and the second direction magnetic field component detection of the second Hall pair, as well as improving the sensitivity of planar magnetic field detection and the quality of the output signal.

[0074] Specifically, the opening 104 of the first magnetic focusing layer 103 is disposed above the second Hall element 102. While realizing the integrated setting of the three-axis magnetic field detection element, the inter-axis crosstalk to the second Hall element 102 is reduced, and the detection isolation degree is improved.

[0075] In summary, the three-axis Hall sensing structure of the present application is provided with a plurality of pairs of first Hall elements 101, which are arranged at intervals in pairs along the orthogonal first direction and second direction to form a planar magnetic field detection device capable of performing Hall differential detection; moreover, a reserved space is provided in the middle of the preset pattern formed by the distribution of the plurality of first Hall elements 101 for integrally arranging at least one second Hall element 102 to respond to the magnetic field in the third direction and realize 3D magnetic field detection. By disposing the second Hall element 102 in the middle of the reserved space, the distance between it and the first Hall elements 101 in each direction is made similar or equal, which can achieve a good inter-axis isolation effect and facilitate the calibration and calculation of magnetic field detection in each direction; in addition, the structure of the present application further has a first magnetic focusing layer 103 stacked on the plurality of first Hall elements 101, and the orthographic projection of the first magnetic focusing layer 103 on the plane at least partially covers the area of the preset pattern to realize the adjustment and gain of the planar magnetic field, improve the sensitivity and accuracy of planar magnetic field detection, and expose the second Hall element 102 by opening a hole 104 in the first magnetic focusing layer 103 to realize the inter-axis isolation between the third direction and the planar magnetic field detection, making the three-axis Hall sensing structure have the advantages of integration, miniaturization, low cost, anti-interference and high inter-axis isolation degree.

[0076] In a possible implementation, the center of the orthographic projection of the first magnetic focusing layer 103 on a plane coincides with the center of a preset pattern; and, the shape of the orthographic projection of the first magnetic focusing layer 103 is a figure that is axisymmetric about a first direction and a second direction, and / or, the shape of the orthographic projection of the first magnetic focusing layer 103 is a rotationally symmetric figure. By symmetrically arranging the first magnetic focusing layer 103 above each of the first Hall elements 101 for planar magnetic field detection, combined with the fact that the two first Hall elements 101 of the first Hall pair are symmetrically arranged about the second direction, and the two first Hall elements 101 of the second Hall pair are symmetrically arranged about the first direction, that is, the planar magnetic field detection component is overall symmetric and consistent in the X and Y directions, the magnetic focusing effect of the first magnetic focusing layer 103 on the two first Hall elements 101 of the first Hall pair is consistent, the magnetic focusing effect on the two first Hall elements 101 of the second Hall pair is also consistent, and at the same time, the influence on the Z-axis magnetic field detection of the second Hall element 102 is also easy to calibrate and eliminate due to symmetry, reducing the cross-talk between axes. If the first magnetic focusing layer 103 is further set to be a rotationally symmetric figure, and in the case where the first Hall pair and the second Hall pair are rotationally symmetric (that is, still symmetric after rotating 90°, and the X and Y directions are completely symmetric and consistent), not only is the gain of the differential signal of the planar magnetic field detection to the magnetic field consistent, but also the influence of the first magnetic focusing layer 103 and the first Hall element 101 on the Z axis is theoretically completely eliminated due to symmetry. Even if there is a certain amount of cross-talk, the influence of the X axis and the Y axis on the Z-direction detection is also consistent and easy to calibrate and remove. Exemplarily, the shape of the opening 104 can be a regular even-sided polygon, a circle, or the like.

[0077] In a possible implementation, the first magnetic focusing layer 103 is a stack formed on the plurality of first Hall elements 101 based on a lithography process to achieve a registration accuracy below the sub-micron level, improve the positional accuracy of the first magnetic focusing layer 103, and make the cross-talk introduced by the registration error negligible. Exemplarily, referring to Figure 1 -5, the shape of the first magnetic focusing layer 103 can be a rectangle, a circle, a regular even-sided polygon, or the like.

[0078] In a possible implementation, the orthographic projection of the first magnetic focusing layer 103 on a plane covers the sensing center of the first Hall element 101, where the sensing center refers to the center of the sensing region of the Hall element; and for the first Hall element 101 arranged in the first direction, the length by which the outer edge of the orthographic projection of the first magnetic focusing layer 103 on the plane extends beyond the sensing region of the first Hall element 101 in the first direction does not exceed a first preset ratio of the length of the sensing region of the first Hall element 101 in the first direction, and the first preset ratio is 1 / 4 - 2 / 5; for the first Hall element 101 arranged in the second direction, the length by which the outer edge of the orthographic projection of the first magnetic focusing layer 103 on the plane extends beyond the sensing region of the first Hall element 101 in the second direction does not exceed a second preset ratio of the length of the sensing region of the first Hall element 101 in the second direction, and the second preset ratio is 1 / 4 - 2 / 5. It should be noted that the above-mentioned length extending beyond the sensing region of the first Hall element 101 refers to the interval between the outer edge and the outer edge of the sensing region of the first Hall element 101. Preferably, the first preset ratio is 1 / 3; the second preset ratio is 1 / 3. The outer edge of the first magnetic focusing layer 103 refers to the edge of the first magnetic focusing layer 103 that is away from the center of the magnetic focusing layer. The first magnetic focusing layer 103 satisfies the aforementioned symmetric structure setting and its outer edge exceeds the sensing center of each first Hall element 101 in the direction away from the center of the magnetic focusing layer, so as to enhance the magnetic field aggregation and deflection effects. At the same time, the outer edge does not exceed 1 / 4 - 2 / 5 of the length of the first Hall element 101 itself, avoiding the excessive size of the three-axis Hall sensing structure and the weakening of the magnetic focusing effect.

[0079] Exemplarily, referring to Figure 1 , the projection of the first magnetic focusing layer 103 on the Hall plane (XY plane) is located in the central region of the areas where the 4 first Hall elements 101 are located. The outer edges all exceed the sensing centers of the first Hall elements 101, and its shape is symmetric about the XY directions. The size of the first magnetic focusing layer 103 is determined by the range of the outer edges. Each outer edge can extend from the a line (red line) passing through the sensing center to cover but not exceed the b line (green line) of 1 / 3 of the first Hall element 101.

[0080] In a possible implementation, the thickness of the first magnetic focusing layer 103 is 5 - 500 μm. Through the above thickness setting, while ensuring the magnetic focusing effect, it avoids affecting the subsequent metal wire bonding process.

[0081] In a possible implementation, the opening 104 is located in the middle of the first magnetic focusing layer 103, and the center of the orthographic projection of the opening 104 on the plane coincides with the sensing center of the second Hall element 102. The opening 104 is located in the middle of the first magnetic focusing layer 103, and the central axis of the opening 104 coincides with the sensing central axis of the second Hall element 102. Combining the symmetric arrangement of each first Hall element 101 and the symmetric arrangement of the first magnetic focusing layer 103 ensures the symmetry of the signal influence of the first magnetic focusing layer 103 on the second Hall element 102, realizes counter-direction interference cancellation, and improves the signal quality and accuracy of Z-axis magnetic field detection.

[0082] In a possible implementation, the opening 104 on the first magnetic focusing layer 103 is a figure that is axisymmetric about the first direction and the second direction; and / or, the opening 104 on the first magnetic focusing layer 103 is a rotationally symmetric figure. In some cases, the opening 104 is symmetric about the X-axis and the Y-axis. Combining the symmetric design of the first magnetic focusing layer 103 cancels the Z-axis crosstalk in the X-direction and the Y-direction received by the second Hall element 102, realizes a high degree of isolation between the planar magnetic field and the Z-axis magnetic field detection, reduces the chip area and meets the electrode wiring requirements; exemplarily, the shape of the opening 104 can be an ellipse or the like. Preferably, the opening 104 is not only symmetric about the X-axis and the Y-axis, but also a rotationally symmetric figure, that is, rotationally symmetric about the X / Y axis, so that the Z-axis crosstalk in all directions is cancelled, and the Z-axis detection effect and crosstalk isolation are improved; exemplarily, the shape of the opening 104 can be a regular even polygon or a circle or the like.

[0083] In a possible implementation, the area of the opening 104 does not exceed a third preset ratio of the total area of the first magnetic focusing layer 103, and the third preset ratio is 1 / 5 - 1 / 3; preferably, the third preset ratio is 1 / 4. The total area of the first magnetic focusing layer 103 refers to the physical area of the first magnetic focusing layer 103, that is, preferably, the area of the opening 104 is less than 1 / 5 of the total area of the first magnetic focusing layer 103 and the opening 104. By setting the above area ratio limit, while ensuring that the second Hall element 102 is exposed to avoid Z-axis crosstalk, it is avoided that the opening area is too large and affects the magnetic focusing effect of the first magnetic focusing layer 103.

[0084] In one embodiment, referring to Figure 1, the first magnetic focusing layer 103 is located above the four first Hall elements 101, and its center coincides with the center point O of the four first Hall elements 101. The first magnetic focusing layer 103 has an opening 104. The second Hall element 102 (Hall Z) is located at the position of the opening 104 and is exposed to the opening 104 for Z-axis magnetic field detection. The induction center of the second Hall element 102 also coincides with the O point. In this embodiment, the area of the opening 104 is less than 1 / 4 of the area of the first magnetic focusing layer 103. This embodiment uses two Hall pairs arranged in a cross shape and the stacked first magnetic focusing layer 103 to achieve horizontal magnetic field detection, and leaves a space in the center for placing the second Hall element 102 for Z-axis detection. An opening 104 is made in the first magnetic focusing layer 103 to achieve the purpose of reducing crosstalk between axes and improving isolation, and to implement a 5-Hall 3D sensing scheme with high integration of the Z-axis Hall and the XY-plane Hall and high isolation of magnetic field detection signals.

[0085] In a possible implementation manner, the opening 104 exposes at least part of the electrode structure 105 of the second Hall element 102. At least part of the electrode wiring of the second Hall element 102 is led out from the opening 104. The opening 104 can not only achieve signal detection isolation, but also be used for leading out the electrode leads of the second Hall element 102, improving the rationality, simplicity and chip practicability of chip wire bonding and IC circuit layout.

[0086] In a possible implementation manner, the electrode structure 105 of the second Hall element 102 includes a second working positive electrode and a second working negative electrode; any one of the second working positive electrode and the second working negative electrode is connected in a collinear manner with the same-polarity working electrode of the first Hall element 101. By collinear electrodes, the IC circuit wiring is simplified. Refer to Figure 2 , the second Hall element 102 and the first Hall element 101 share a working positive electrode, and the other working negative electrode and two signal electrodes (the left and right electrodes) are exposed from the opening 104 of the first magnetic focusing layer 103 to leave space for subsequent metal wire bonding and are connected to the pad 107.

[0087] In a possible implementation manner, the interval between the edge of the positive projection of the opening 104 on the plane and the electrode structure 105 exposed by the opening 104 is in the micron range; specifically, the interval between the edge of the positive projection of the opening 104 and the electrode structure 105 exposed by the opening 104 can be 10-100 μm. By setting a micron-level interval, while miniaturizing the device size, the wire bonding process is not affected. In addition, combined with the thickness setting of the aforementioned first magnetic focusing layer 103, the effect of the wire bonding process is further ensured.

[0088] In a preferred implementation manner, the pads 107 of the first Hall elements 101 are respectively arranged on opposite sides of a preset pattern, showing a left-right design in a top view angle (refer to Figure 3)(or the up-and-down design) for facilitating the wire bonding layout; the working electrode of the second Hall element 102 can be directly connected to the peripheral jumper, and the signal electrode can be wire-bonded to the circuit board. If there are incompatibility and interference problems in the wire-bonding direction, it can be set to jump to the adapter board, etc., which will not be elaborated here.

[0089] In one embodiment, referring to Figure 3 , the figure shows the electrode layout diagram of the three-axis Hall sensing structure. The pad 107 with a black wire frame in the figure is connected to the working positive electrode, the pad 107 with a green wire frame is connected to the working negative electrode (or the working ground electrode), and the pad 107 without an outer frame is connected to the signal electrode of the Hall element. It can be understood that the positive and negative of the working electrode can be reversed, and the corresponding signal will be inverted, which does not affect the measurement. Figure 3 The first working positive electrodes of the four first Hall elements 101 in

[0090] In possible implementation manners, referring to Figure 4 , the three-axis Hall sensing structure further includes a second magnetic focusing layer 106, which is stacked on the sensing area of the second Hall element 102 and is spaced from the first magnetic focusing layer 103 for magnetic focusing of the magnetic field in the third direction. In this way, the sensitivity of the Z-axis magnetic field detection is improved by setting the second magnetic focusing layer 106. Specifically, the second magnetic focusing layer 106 can be located in the opening 104 and expose the electrode structure 105 exposed in the opening 104.

[0091] In possible implementation manners, the center of the orthographic projection of the second magnetic focusing layer 106 on the plane coincides with the sensing center of the second Hall element 102, that is, it is arranged directly above the second Hall element 102 to enhance the signal gain of the second Hall element 102.

[0092] In possible implementation manners, the shape of the orthographic projection of the second magnetic focusing layer 106 on the plane is a figure that is axisymmetric about the first direction and the second direction, so as to make the magnetic focusing performance in the first direction and the second direction have consistency through the symmetric design, and improve the magnetic focusing effect and the magnetic field detection accuracy.

[0093] In possible implementation manners, the shape of the orthographic projection of the second magnetic focusing layer 106 on the plane is a rotationally symmetric figure, and the rotation symmetry angle can be 90°; combined with the aforementioned axisymmetric setting about the first direction and / or the second direction, the anisotropic consistency of the magnetic focusing effect is further improved, and the magnetic focusing effect and the detection accuracy are improved.

[0094] In a possible implementation, the thickness of the second magnetic focusing layer 106 is 5 - 500 μm, which can meet the magnetic focusing performance while avoiding affecting the wire bonding process of the electrode wiring.

[0095] In a possible implementation, the second magnetic focusing layer 106 is a stack formed on the second Hall element 102 based on a lithography process to achieve a registration accuracy below the sub-micron level and improve the positional accuracy of the second magnetic focusing layer 106.

[0096] In a possible implementation, the distance between the outer edge of the orthographic projection of the second magnetic focusing layer 106 on the plane and the electrode structure 105 exposed by the opening 104 is at the micron level; specifically, the distance between the outer edge of the orthographic projection of the second magnetic focusing layer 106 and the electrode structure 105 exposed by the opening 104 can be several tens to one hundred microns. By setting the micron-level distance, the device size can be miniaturized while avoiding affecting the wire bonding process.

[0097] In a possible implementation, the magnetic field component gain corresponding to the Hall voltage signal in the first direction is the same as the magnetic field component gain corresponding to the Hall voltage signal in the second direction. It can be understood that by setting the first magnetic focusing layer 103 directly above a preset pattern and setting it to be axisymmetric and rotationally symmetric about the first direction and the second direction, the magnetic field component gains in the X and Y axes can be made the same.

[0098] It can be understood that taking Figure 3 the device layout as an example, the relationship between the magnetic field component B and the Hall voltage signal V is , , , where represents the Hall voltage signal in the X direction output from the Hall A and Hall B terminals, represents the Hall voltage signal in the Y direction output from the Hall C and Hall D terminals, is the Hall voltage signal in the Z direction output from Hall Z, that is, the output of the three-axis Hall sensing structure is , and , K is the gain of the Hall voltage with respect to the magnetic field component, that is, it represents the magnetic field component gain, , and respectively represent the magnetic field component gains in the X, Y, and Z directions.

[0099] Correspondingly, can be obtained, , , and signals proportional to the respective magnetic field components can be output through division calculations to fabricate a linear Hall IC device (refer to Figure 4). By setting the first magnetic focusing layer 103 directly above the preset pattern, and being axisymmetric about both the X and Y directions and designed to be rotationally symmetric about the XY axes, it is possible to ensure that the magnetic field component gains in the X and Y directions are consistent ( ).

[0100] In a possible implementation, the magnetic field component gain corresponding to the Hall voltage signal in the first direction, the magnetic field component gain corresponding to the Hall voltage signal in the second direction, and the magnetic field component gain corresponding to the Hall voltage signal in the third direction are consistent. It can be understood that by setting the first magnetic focusing layer 103 directly above the preset pattern and setting it to be axisymmetric and rotationally symmetric about the first and second directions, and then adjusting the gain of the rear-end signal amplification in the third direction, it is possible to achieve consistent magnetic field component gains for the XYZ axes. That is, when a linear Hall element is required, it is ensured from the design and calibration that , then the output gains of the signals for each axis are the same. In this way, division operations are avoided in the circuit design, and the output signal is the magnetic field component with the same gain for the three axes. The circuit is simple and the cost is reduced. Exemplarily, Figure 3 and Figure 4 show that in a three-axis Hall sensing structure, the first magnetic focusing layer 103 is a regular octagon, completely rotationally symmetric in the XY directions, and the gains in the two directions are the same. By adjusting the gain through the rear-end electronic method of the Z axis, a linear Hall device with the same gain for the three axes can be obtained.

[0101] In summary, the present application provides a three-axis Hall sensing structure with a magnetic circuit design having high isolation, which can be used in a three-axis Hall chip to achieve a high signal suppression ratio and low drift between axes, and the differential detection on the horizontal plane enables the XY axes to have strong anti-interference capabilities, having the advantages of integration, miniaturization, low cost, anti-interference, and high inter-axis isolation.

[0102] On the other hand, the present application provides a three-axis Hall chip, and the three-axis Hall chip includes the three-axis Hall sensing structure as described above.

[0103] On the other hand, the present application provides an integrated circuit, and the integrated circuit includes the three-axis Hall sensing structure as described above.

[0104] On the other hand, the present application provides an electronic device, and the electronic device includes an electronic device prepared by using the above three-axis Hall sensing structure or the preparation method of the three-axis Hall sensing structure. The electronic device can include any electronic components such as an integrated circuit and an electronic device. Due to the better working performance of the three-axis Hall sensing structure, the performance of the electronic device is correspondingly improved.

[0105] The electronic device according to the embodiment of the present application may be selected from any electronic product or device such as a mobile phone, a personal digital assistant (PDA), a tablet computer (pad), a laptop computer, a game console, a television, a video compact disc (VCD), a digital video disc (DVD), a navigator, a camera, a video camera, a recording pen, an MP3, an MP4, a PlayStation Portable (PSP), etc., or may also be an intermediate product including any electronic device made by the above-mentioned three-axis Hall sensing structure.

[0106] It should be noted that the embodiments in this specification are all described in a progressive manner. Each embodiment focuses on the differences from other embodiments. For the same or similar parts among the embodiments, reference can be made to each other.

[0107] The above description has fully disclosed the specific implementation manners of the present application. It should be pointed out that any modification made by those skilled in the art to the specific implementation manners of the present application does not depart from the scope of the claims of the present application. Correspondingly, the scope of the claims of the present application is not limited to the foregoing specific implementation manners.

Claims

1. A three-axis Hall sensing structure, characterized in that The three-axis Hall sensing structure includes: a plurality of first Hall elements (101) arranged in pairs, which are used to detect a planar two-dimensional magnetic field by a differential detection method. Some of the first Hall elements (101) are arranged at intervals in pairs along a first direction, and some of the first Hall elements (102) are arranged at intervals in pairs along a second direction. The first direction and the second direction are orthogonal, and a reserved space is provided in the middle of the preset pattern formed by the distribution of the plurality of first Hall elements (101). At least one second Hall element (102), which is used to respond to the magnetic field in a third direction. The third direction is orthogonal to the plane, and the sensing area of the second Hall element (102) is located in the middle of the reserved space. A first magnetic concentrating layer (103) is stacked on the plurality of first Hall elements (101), and the orthographic projection of the first magnetic concentrating layer (103) on the plane at least partially covers the area of the preset pattern. The first magnetic concentrating layer (103) has an opening (104) exposing the second Hall element (102).

2. The three-axis Hall sensing structure according to claim 1, wherein The three-axis Hall sensing structure satisfies one of the following characteristics: The plurality of first Hall elements (101) form a planar Hall differential detection assembly; The sensing areas of the plurality of first Hall elements (101) and the sensing area of a second Hall element (102) among at least one second Hall element (102) are arranged coplanarly; The sensing central axis of the second Hall element (102) is coaxial with the central axis of the preset pattern.

3. The three-axis Hall sensing structure according to claim 1, characterized in that, The three-axis Hall sensing structure satisfies at least one of the following characteristics: Each of the first Hall elements (101) arranged along the first direction forms at least one first Hall pair, and the two first Hall elements (101) in the first Hall pair are symmetrically arranged about the second direction; Each of the first Hall elements (101) arranged along the second direction forms at least one second Hall pair, and the two first Hall elements (101) in the second Hall pair are symmetrically arranged about the first direction; The symmetry centers of each first Hall pair coincide with the symmetry centers of each second Hall pair; The first Hall pair and / or the second Hall pair are differentially connected in parallel; The first Hall elements (101) in the first direction and the first Hall elements (101) in the second direction are rotationally symmetrically arranged.

4. The three-axis Hall sensing structure according to claim 1, characterized in that, The three-axis Hall sensing structure satisfies at least one of the following characteristics: The sensing area of the first Hall element (101) arranged along the first direction is a structure that is axisymmetric about the first direction and / or the second direction; The sensing area of the first Hall element (101) arranged along the second direction is a structure that is axisymmetric about the second direction and / or the first direction; The sensing area of the second Hall element (102) is a structure that is axisymmetric about the first direction and axisymmetric about the second direction; The sensing area of the first Hall element (101) is a rotationally symmetric structure; The sensing area of the second Hall element (102) is a rotationally symmetric structure.

5. The three-axis Hall sensing structure according to any one of claims 1-4, characterized in that, The center of the orthographic projection of the first magnetic concentrating layer (103) on the plane coincides with the center of the preset pattern. The orthographic projection shape of the first magnetic focusing layer (103) is a figure that is axisymmetric about the first direction and the second direction, and / or the orthographic projection shape of the first magnetic focusing layer (103) is a rotationally symmetric figure.

6. The three-axis Hall sensing structure according to any one of claims 1-4, characterized in that, The opening (104) satisfies at least one of the following characteristics: The opening (104) is located in the middle of the first magnetic focusing layer (103), and the center of the orthographic projection of the opening (104) on the plane coincides with the sensing center of the second Hall element (102); The opening (104) on the first magnetic focusing layer (103) is a figure that is axisymmetric about the first direction and the second direction; and / or the opening (104) on the first magnetic focusing layer (103) is a rotationally symmetric figure; The opening (104) exposes at least part of the electrode structure (105) of the second Hall element (102), and at least part of the electrode wiring of the second Hall element (102) is led out from the opening (104); The interval between the edge of the orthographic projection of the opening (104) on the plane and the electrode structure (105) exposed by the opening (104) is 10 - 100 μm; The area of the opening (104) does not exceed a third preset ratio of the total area of the first magnetic focusing layer (103), and the third preset ratio is 1 / 5 - 1 / 3.

7. The three-axis Hall sensing structure according to any one of claims 1-4, characterized in that, The first magnetic focusing layer (103) satisfies at least one of the following characteristics: the orthographic projection of the first magnetic focusing layer (103) on the plane covers the sensing center of the first Hall element (101), and for the first Hall element (101) arranged in the first direction, the length by which the outer edge of the orthographic projection of the first magnetic focusing layer (103) on the plane extends beyond the sensing area of the first Hall element (101) in the first direction does not exceed a first preset ratio of the sensing area length of the first Hall element (101) in the first direction, and the first preset ratio is 1 / 4 - 2 / 5; for the first Hall element (101) arranged in the second direction, the length by which the outer edge of the orthographic projection of the first magnetic focusing layer (103) on the plane extends beyond the sensing area of the first Hall element (101) in the second direction does not exceed a second preset ratio of the sensing area length of the first Hall element (101) in the second direction, and the second preset ratio is 1 / 4 - 2 / 5; The thickness of the first magnetic focusing layer (103) is 5 - 500 μm; The first magnetic focusing layer (103) is a stack formed on the plurality of first Hall elements (101) based on a lithography process.

8. The three-axis Hall sensing structure according to claim 7, characterized in that The electrode structure (105) of the second Hall element (102) includes a second working positive electrode and a second working negative electrode; Any one of the second working positive electrode and the second working negative electrode is connected collinearly with the same-polarity working electrode of the first Hall element (101).

9. The three-axis Hall sensing structure according to any one of claims 1-4, characterized in that, The three-axis Hall sensing structure further includes: A second magnetic focusing layer (106), which is stacked on the sensing area of the second Hall element (102) and is spaced from the first magnetic focusing layer (103), and is used for magnetic focusing of the magnetic field in the third direction.

10. The three-axis Hall sensing structure according to claim 10, characterized in that, The second magnetic focusing layer (106) satisfies at least one of the following characteristics: The center of the orthographic projection of the second magnetic focusing layer (106) on the plane coincides with the induction center of the second Hall element (102); The shape of the orthographic projection of the second magnetic focusing layer (106) on the plane is a figure that is axisymmetric about the first direction and the second direction; The shape of the orthographic projection of the second magnetic focusing layer (106) on the plane is a rotationally symmetric figure; The thickness of the second magnetic focusing layer (106) is 5 - 500 μm.

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