Electromagnetic simulation correction method and device, electronic equipment and storage medium

By making overall corrections to the electromagnetic simulation model, using the comparison results of simulation data and actual test data, analytical data is obtained, and corrected based on the simulation model and correction database, the problem of only correcting specific parameters in the existing technology is solved, and the scope of application and data consistency of the simulation model is improved.

CN120257911APending Publication Date: 2025-07-04QINGDAO HAIER AIR CONDITIONER GENERAL CORP LTD +2
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Patent Information

Application Number
CN202410004755.2
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2024-01-02
Publication Date
2025-07-04

AI Technical Summary

Technical Problem

The existing technology can only correct specific parameters of inductors in electromagnetic simulation, and cannot correct the overall simulation model, and the scope of application is limited.

Method used

By generating a simulation model, using the comparison results of the simulation data and actual test data, analytical data is obtained, and the simulation model is overall corrected based on the simulation model, analysis data and correction database.

Benefits of technology

The overall correction of the simulation model is achieved, the scope of application of the correction method is improved, the consistency between the simulation data and the actual test data is improved, and more efficient electromagnetic compatibility design is supported.

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Patent Text Reader

Abstract

The invention relates to the technical field of electromagnetic simulation, and discloses an electromagnetic simulation correction method and device, electronic equipment and a storage medium. The electromagnetic simulation correction method comprises the following steps: generating a simulation model; generating simulation data according to the simulation model and a simulation database; comparing the simulation data with actual test data to obtain analysis data; and correcting the simulation model according to the simulation model, the analysis data and the correction database. According to the electromagnetic simulation correction method provided by the invention, the analysis data can be obtained according to the comparison result of the simulation data and the actual test data, and then the simulation model is integrally corrected according to the simulation model, the analysis data and the correction database. Compared with the prior art, correction of specific parameters is not limited, and therefore the application range of the correction method is widened.
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Description

Technical Field

[0001] This application relates to the field of electromagnetic simulation technology, and for example, relates to an electromagnetic simulation correction method and device, an electronic device, and a storage medium. Background Art

[0002] EMC (Electromagnetic Compatibility) refers to the ability of a device to operate in its electromagnetic environment as required without generating intolerable electromagnetic interference to other devices in its environment. Electromagnetic compatibility is of great significance for the normal operation of devices, non-interference with each other, and human health. To facilitate product development, many engineers choose to use electromagnetic simulation to guide the EMC design of products. During the electromagnetic simulation process, it is necessary to correct the simulation measurement results of sample devices so that the simulation measurement results are consistent with the actual measurement results of the devices.

[0003] In order to effectively correct the simulated inductance value during the electromagnetic simulation process, in related technologies, an electromagnetic simulation inductance value correction method, device, and storage medium are proposed. The method includes: performing 3D modeling based on the inductance structure to generate an inductance simulation model; inputting an excitation current to the inductance simulation model, and obtaining the simulated inductance value based on the generated induced magnetic field; obtaining the measured inductance value of an actual inductor device that is exactly the same as the inductance structure; comparing the simulated inductance value with the measured inductance value, and when the error between the simulated inductance value and the measured inductance value exceeds the first preset error range, adjusting the magnetic permeability of the dielectric material in the inductance simulation model to correct the simulated inductance value.

[0004] In the process of implementing the embodiments of the present disclosure, it is found that there are at least the following problems in related technologies:

[0005] Although related technologies correct the inductance value of the inductor in the electromagnetic simulation by adjusting the magnetic permeability of the dielectric material in the inductance simulation model, and effectively correct the simulated inductance value. However, related technologies can only correct specific parameters and cannot correct other parameters or the overall simulation model, so the applicable scope of this correction method is small.

[0006] It should be noted that the information disclosed in the above background art section is only used to enhance the understanding of the background of this application, and therefore may include information that does not constitute the prior art known to those of ordinary skill in the art. Summary of the Invention

[0007] To have a basic understanding of some aspects of the disclosed embodiments, a simple summary is given below. This summary is not a general review, nor is it intended to identify key / important constituent elements or delineate the protection scope of these embodiments, but rather serves as a preface to the subsequent detailed description.

[0008] Embodiments of the present disclosure provide an electromagnetic simulation correction method and apparatus, an electronic device, and a storage medium, which can perform overall correction on a simulation model and improve the applicable scope of the correction method.

[0009] In some embodiments, an electromagnetic simulation correction method is provided, including: generating a simulation model; generating simulation data according to the simulation model and a simulation database; comparing the simulation data with actual test data to obtain analysis data; and correcting the simulation model according to the simulation model, the analysis data, and a correction database.

[0010] Optionally, the step of generating simulation data according to the simulation model and the simulation database includes: retrieving target device parameters and target circuit parameters of the simulation model; querying a simulation scheme in the simulation database according to the target device parameters and the target circuit parameters; and performing a simulation operation on the simulation model according to the simulation scheme to generate simulation data.

[0011] Optionally, the step of correcting the simulation model according to the simulation model, the analysis data, and the correction database includes: when the analysis data is greater than an error threshold, querying a correction scheme in the correction database according to the simulation model and the analysis data; and correcting the simulation model according to the correction scheme.

[0012] Optionally, the step of correcting the simulation model according to the simulation model, the analysis data, and the correction database further includes: when the analysis data is less than the error threshold, stopping the correction of the simulation model.

[0013] Optionally, the step of generating a simulation model includes: identifying target device parameters and target circuit parameters of a device under test; and generating a simulation model according to the target device parameters and the target circuit parameters of the device under test.

[0014] Optionally, the step of identifying target device parameters and target circuit parameters of the device under test includes: identifying initial device parameters and initial circuit parameters of the device under test based on a structural image of the device under test; applying a current to the device under test to obtain operating parameters of the device under test; and determining the target device parameters and the target circuit parameters of the device under test according to the operating parameters, the initial device parameters, and the initial circuit parameters.

[0015] Optionally, the step of generating a simulation model according to the target device parameters and the target circuit parameters of the device under test includes: building a device model according to the target device parameters; and building a simulation model according to the device model and the target circuit parameters.

[0016] Optionally, the electromagnetic simulation correction method further includes: preprocessing the collected first simulation data, where the preprocessing includes classification and setting a storage depth; encoding the first simulation data according to the storage depth and the classification result; and storing the first simulation data according to the encoding to obtain a simulation database.

[0017] Optionally, the electromagnetic simulation correction method further includes: preprocessing the collected second simulation data, where the preprocessing includes classification and setting a storage depth; encoding the second simulation data according to the storage depth and the classification result; and storing the second simulation data according to the encoding to obtain a correction database.

[0018] In some embodiments, an electromagnetic simulation correction device is provided, including a processor and a memory storing program instructions, where the processor is configured to execute the electromagnetic simulation correction method according to any of the above embodiments when running the program instructions.

[0019] In some embodiments, an electronic device is provided, including: a device body; and the electromagnetic simulation correction device as described above, installed in the device body.

[0020] In some embodiments, a storage medium is provided, storing program instructions, where the program instructions, when running, are used to cause a computer to execute the electromagnetic simulation correction method according to any of the above embodiments.

[0021] The electromagnetic simulation correction method, device, electronic device, and storage medium provided by the embodiments of the present disclosure can achieve the following technical effects:

[0022] The electromagnetic simulation correction method provided by the embodiments of the present disclosure can obtain analysis data according to the comparison result between the simulation data and the actual test data, and then globally correct the simulation model according to the simulation model, the analysis data, and the correction database. Compared with the related art, it does not limit the correction of specific parameters, so the applicable range of the correction method is improved.

[0023] The above general description and the following description are only exemplary and explanatory, and are not used to limit this application. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] One or more embodiments are exemplarily illustrated by the corresponding drawings. These exemplary illustrations and the drawings do not constitute a limitation on the embodiments. Elements with the same reference numerals in the drawings are shown as similar elements. The drawings do not constitute a scale limitation, and among them:

[0025] Figure 1 is a schematic diagram of an electromagnetic simulation correction method provided by an embodiment of the present disclosure;

[0026] Figure 2 is a schematic diagram of another electromagnetic simulation correction method provided by an embodiment of the present disclosure;

[0027] Figure 3 is a schematic diagram of another electromagnetic simulation correction method provided by an embodiment of the present disclosure;

[0028] Figure 4 It is a schematic diagram of another electromagnetic simulation correction method provided by an embodiment of the present disclosure;

[0029] Figure 5 It is a schematic diagram of an electromagnetic simulation correction device provided by an embodiment of the present disclosure;

[0030] Figure 6 It is a schematic diagram of an electronic device provided by an embodiment of the present disclosure;

[0031] Figure 7 It is a graph of the impedance R - frequency f of an inductor provided by an embodiment of the present disclosure. Detailed implementation manners

[0032] In order to be able to understand the features and technical content of the embodiments of the present disclosure in more detail, the implementation of the embodiments of the present disclosure will be described in detail below with reference to the accompanying drawings. The accompanying drawings are for reference and illustration purposes only and are not used to limit the embodiments of the present disclosure. In the following technical description, for the sake of explanation, multiple details are provided to provide a full understanding of the disclosed embodiments. However, one or more embodiments can still be implemented without these details. In other cases, well-known structures and devices can be shown in a simplified manner to simplify the drawings.

[0033] In the embodiments of the present disclosure, terms such as "first" and "second" in the specification, claims and the above-mentioned drawings are used to distinguish similar objects and do not necessarily need to describe a specific order or sequence. It should be understood that the data used in this way can be interchanged under appropriate circumstances so as to implement the embodiments of the present disclosure described here. In addition, the terms "including" and "having" and any variations thereof are intended to cover non-exclusive inclusion.

[0034] Unless otherwise specified, the term "plurality" means two or more.

[0035] In the embodiments of the present disclosure, the character " / " indicates that the objects before and after are in an "or" relationship. For example, A / B means: A or B.

[0036] The term "and / or" is a description of the associated relationship of an object, indicating that there can be three relationships. For example, A and / or B means: A or B, or, the three relationships of A and B.

[0037] The term "corresponding" can refer to an associated relationship or a binding relationship. A corresponding to B means that there is an associated relationship or a binding relationship between A and B.

[0038] In the related art, an electromagnetic simulation inductance value correction method, device, and storage medium are proposed. The method includes: performing 3D modeling based on the inductance structure to generate an inductance simulation model; inputting an excitation current to the inductance simulation model, and obtaining a simulated inductance value based on the generated induced magnetic field; obtaining a measured inductance value of an actual inductor device that is exactly the same as the inductance structure; comparing the simulated inductance value with the measured inductance value, and when the error between the simulated inductance value and the measured inductance value exceeds a first preset error range, adjusting the magnetic permeability of the dielectric material in the inductance simulation model to correct the simulated inductance value.

[0039] Although the related art corrects the inductance value in electromagnetic simulation by adjusting the magnetic permeability of the dielectric material in the inductance simulation model, and effectively corrects the simulated inductance value. However, the related art can only correct specific parameters and cannot correct other parameters or the entire simulation model. Therefore, the applicable range of this correction method is small.

[0040] The embodiments of the present disclosure provide an electromagnetic simulation correction method that can correct the entire simulation model and improve the applicable range of the correction method. This electromagnetic simulation correction method can run on an electronic device. The electronic device can obtain analysis data based on the comparison result of simulation data and actual test data, and then correct the entire simulation model according to the simulation model, analysis data, and correction database. Among them, the electronic device includes a processor and a memory storing program instructions. It may also include a communication interface and a bus. Among them, the processor, communication interface, and memory complete communication with each other through the bus. The communication interface is used for information transmission.

[0041] Combined Figure 1 As shown, the embodiments of the present disclosure provide an electromagnetic simulation correction method, including:

[0042] S101, the processor generates a simulation model.

[0043] S102, the processor generates simulation data according to the simulation model and the simulation database.

[0044] S103, the processor compares the simulation data with the actual test data to obtain analysis data.

[0045] S104, the processor corrects the simulation model according to the simulation model, analysis data, and correction database.

[0046] By using the electromagnetic simulation correction method provided by the embodiments of the present disclosure, analysis data can be obtained based on the comparison result of simulation data and actual test data, and then the entire simulation model can be corrected according to the simulation model, analysis data, and correction database. Compared with the related art, it is not limited to correcting specific parameters, so the applicable range of the correction method is improved.

[0047] Optionally, the steps of generating simulation data according to the simulation model and the simulation database include: retrieving the target device parameters and target circuit parameters of the simulation model; querying the simulation scheme in the simulation database according to the target device parameters and target circuit parameters; performing a simulation operation on the simulation model according to the simulation scheme to generate simulation data.

[0048] In this embodiment, the target device parameters and target circuit parameters of the simulation model can be retrieved. Among them, the target circuit parameters of the simulation model include the circuit type and circuit structure of the simulation model. The target device parameters of the simulation model include the device type and device electrical parameters of the simulation model. Directly query the simulation scheme in the simulation database according to the target device parameters and target circuit parameters, and then perform the corresponding simulation operation on the simulation model according to the simulation scheme to generate simulation data. Through the target device parameters and target circuit parameters, directly query the simulation scheme corresponding to the simulation model in the simulation database, eliminating the process of manually determining and analyzing the simulation model and proposing a simulation scheme according to the analysis results, thereby improving the automation degree of the simulation process.

[0049] Optionally, the steps of correcting the simulation model according to the simulation model, analysis data, and correction database include: querying the correction scheme in the correction database according to the simulation model and analysis data when the analysis data is greater than the error threshold; correcting the simulation model according to the correction scheme.

[0050] In this embodiment, the analysis data refers to the error between the simulation data and the actual test data. By comparing the analysis data with the error threshold, when the analysis data is greater than the error threshold, query the correction scheme in the correction database according to the simulation model and analysis data, and then correct the simulation model. By continuously correcting the simulation model, the consistency between the simulation data and the actual test data is improved, which is convenient for researchers to conduct electromagnetic compatibility design of products.

[0051] Further, the steps of querying the correction scheme in the correction database according to the simulation model and analysis data include: retrieving the target device parameters and target circuit parameters of the simulation model; querying the correction scheme in the correction database according to the target device parameters, target circuit parameters, and analysis data.

[0052] In this embodiment, the target device parameters and target circuit parameters of the simulation model can be retrieved. Among them, the target circuit parameters of the simulation model include the circuit type and circuit structure of the simulation model. The target device parameters of the simulation model include the device type and device electrical parameters of the simulation model. According to the target device parameters, target circuit parameters, and analysis data, the correction scheme is directly queried in the correction database, and then the simulation model is corrected according to the correction scheme. In the related art, for the correction of the simulated inductance value, by opening the permeability setting file, reducing or increasing the permeability of the dielectric material, and making multiple tentative adjustments to the simulated inductance value, the effective correction of the simulated inductance value is achieved. This method corrects the simulation model by directly querying the correction scheme corresponding to the analysis data and the simulation model in the correction database. Compared with the related art, the number of adjustments is reduced, thereby reducing the calculation process of the correction method and improving the correction efficiency.

[0053] Combined with Figure 2 As shown in the figure, another electromagnetic simulation correction method provided by an embodiment of the present disclosure includes:

[0054] S201, the processor generates a simulation model.

[0055] S202, the processor generates simulation data according to the simulation model and the simulation database.

[0056] S203, the processor compares the simulation data with the actual test data to obtain analysis data.

[0057] S204, when the analysis data is greater than the error threshold, the processor queries the correction scheme in the correction database according to the simulation model and the analysis data.

[0058] S205, the processor corrects the simulation model according to the correction scheme.

[0059] S206, when the analysis data is less than the error threshold, the processor stops correcting the simulation model.

[0060] By using the electromagnetic simulation correction method provided by the embodiment of the present disclosure, when the analysis data is greater than the error threshold, according to the simulation model and the analysis data, the correction scheme is queried in the correction database and then the simulation model is corrected. And when the analysis data is less than the error threshold, the correction of the simulation model is stopped, realizing the automatic correction of the simulation model. By limiting the completion of the correction of the simulation model when the analysis data is less than the error threshold, the consistency between the simulation data and the actual test data is further improved, so as to facilitate the electromagnetic compatibility design of products by researchers.

[0061] It should be noted that the error threshold needs to be specifically set by researchers according to the actual product equipment and design requirements, and no regulations are made here.

[0062] Optionally, the step of generating a simulation model includes: identifying target device parameters and target circuit parameters of the device under test; generating a simulation model according to the target device parameters and target circuit parameters of the device under test.

[0063] In this embodiment, the target device parameters and target circuit parameters of the device under test can be directly obtained by identifying the device under test. Among them, the target circuit parameters of the device under test include the circuit type and circuit structure of the device under test. The target device parameters of the device under test include the device type and device electrical parameters of the device under test. Furthermore, a simulation model can be automatically generated according to the target device parameters and target circuit parameters of the device under test. By identifying the device under test, the automatic generation of the simulation model is realized, eliminating the process of manually building the simulation model, further improving the automation degree of the simulation process, and enhancing the intelligence of the simulation correction method.

[0064] Optionally, the step of identifying target device parameters and target circuit parameters of the device under test includes: identifying initial device parameters and initial circuit parameters of the device under test based on the structural image of the device under test; applying a current to the device under test to obtain the operating parameters of the device under test; determining the target device parameters and target circuit parameters of the device under test according to the operating parameters, initial device parameters and initial circuit parameters.

[0065] In this embodiment, the structural image of the device under test can be obtained in advance, and based on the structural image of the device under test, the device under test can be preliminarily identified to obtain the initial device parameters and initial circuit parameters of the device under test. Among them, the initial device parameters include the device type of the device under test. The initial circuit parameters include the circuit type and circuit structure of the device under test. After obtaining the initial device parameters and initial circuit parameters of the device under test, it is necessary to further obtain the device electrical parameters of the device under test. Since the performance of the current flowing through different devices and circuit structures is different, the micro-current method is adopted, that is, a current with a changing direction and magnitude is applied to the device under test to obtain the operating parameters of the device under test. The operating parameters include voltage, conduction duration of current, current consumption, etc. Calculate the operating parameters of the device under test to obtain the device electrical parameters of the device under test, so as to obtain the target device parameters and target circuit parameters of the device under test.

[0066] The micro-current method is to utilize the different performances of the current flowing through different devices to obtain the electrical parameters of different devices. In practical applications, since the applied current source is known, that is, information such as the change relationship of the current source over time, the magnitude and direction of the current source, and the frequency of the current source are all known.

[0067] Exemplarily, based on the structural image of the device under test, the device type of the device is identified as a wire. By applying a known current I1 and recording the voltage U1 across the wire ends. Then, according to Ohm's law I = U / R, the equivalent resistance value R1 of the wire can be obtained.

[0068] Exemplarily, based on the structural image of the device under test, the device type of the device is identified as a resistor. By applying a known current I2 and recording the voltage U2 across the resistor, according to Ohm's law I = U / R, the resistance value R2 of the resistor can be obtained.

[0069] Exemplarily, based on the structural image of the device under test, the device type of the device is identified as an inductor. By applying a varying current I3, recording the time t1 when the varying current I3 flows through the inductor, and the voltage U3 across the inductor. Calculate the ratio dI / dt between the change in current flowing through the inductor and the change in time. Then, according to Calculate the inductance value L1 of the inductor. Then, apply a pulsed current to the inductor, record the transient voltage drop ΔU and current ΔI, and according to Ohm's law, calculate the equivalent resistance value R3 of the inductor. In addition, an alternating current with a varying frequency can also be applied, measure the voltage of the inductor at different frequencies, according to Ohm's law, calculate the impedance of the inductor, and record its impedance R - frequency f curve. Combining Figure 7 As shown, there is a peak impedance in the impedance R - frequency f curve of the inductor, as shown by curve a. The alternating current frequency f here is the resonant frequency, and the corresponding impedance at this time is the equivalent resistance value R3 of the inductor. Then, according to the LC oscillation circuit frequency formula Calculate the equivalent capacitance value C1 of the inductor.

[0070] Exemplarily, based on the structural image of the device under test, the device type of the device is identified as a capacitor. By applying a known current I4, and the time t2 during the charging and discharging processes of the capacitor and the voltage U4 across the capacitor. According to Q = It, calculate the electric charge Q stored in the capacitor. According to Q = CU, calculate the capacitance value C2 of the capacitor. According to the capacitor charge and discharge time formula t = CR / I, calculate the equivalent resistance value R4 of the capacitor. In addition, an alternating current with a varying frequency can also be applied, measure the voltage of the capacitor at different frequencies, according to Ohm's law, calculate the impedance of the capacitor, and record its impedance R - frequency f curve. There is a minimum impedance in the impedance R - frequency f curve of the capacitor. The alternating current frequency f here is the resonant frequency, and the corresponding impedance at this time is the equivalent resistance value R4 of the capacitor. Then, according to the LC oscillation circuit frequency formula Calculate the equivalent inductance value L2 of the capacitor.

[0071] The process of calculating the electrical parameters of a device by the microcurrent method is also a process of verifying the device type. By verifying the device type, the probability of misidentifying the device type based on the structural image of the device under test is reduced. The device type after identification and verification by the microcurrent method based on the structural image of the device under test, as well as the electrical parameters of the device calculated by the microcurrent method, are used as the target device parameters. The circuit type and circuit structure identified based on the structural image of the device under test are used as the target circuit parameters.

[0072] The structural image of the device under test can be obtained through the camera configured in the electronic device, or can be obtained through the mobile device associated with the electronic device. When obtaining the structural image of the device under test through the mobile device associated with the electronic device, it is required that the electronic device has a wireless connection function. The electronic device can communicate with the mobile device by connecting to the Internet, or can directly communicate with the mobile device through methods such as Bluetooth, Wi-Fi, etc. The mobile device can include, for example, a mobile phone, a smart watch, a smart mobile device, a virtual reality device, etc., or any combination thereof. Based on the structural image of the device under test, the identification method in the initial device parameters and initial circuit parameters of the device under test can be identified by comparing with the pre-set circuit structure model and the labeled device image, or can be identified by inputting the structural image of the device under test into the identification model. The identification model can be a CNN (Convolutional Neural Network) model.

[0073] It should be noted that the acquisition method and identification method of the structural image of the device under test need to be specifically set by the researcher according to the actual product and design requirements. Only some embodiments are given in this application, and the acquisition method and identification method of the specific structural image of the device under test are not specified here.

[0074] Optionally, the steps of generating a simulation model according to the target device parameters and target circuit parameters of the device under test include: building a device model according to the target device parameters; building a simulation model according to the device model and the target circuit parameters.

[0075] In this embodiment, the target device parameters include the device type of the device under test. According to the device type, the standard device corresponding to this device type is retrieved from the standard device library. The target device parameters also include the device circuit parameters of the device under test. According to the device circuit parameters, the retrieved standard device is assigned corresponding parameter values to obtain a complete device model, and the device model building of each device is completed. The target circuit parameters include the circuit structure, and the circuit structure refers to the connection relationship between each device. According to the circuit structure, the device models of each device are connected in a circuit, thereby completing the simulation model building. Among them, the standard device library can be the standard device library configured by existing electromagnetic simulation software, such as Ansys Simplorer, Maxwell, and Q3D in existing electromagnetic simulation software. It is also possible to construct a standard device library by collecting standard device models.

[0076] Combined with Figure 3 As shown, another electromagnetic simulation correction method provided by an embodiment of the present disclosure includes:

[0077] S301, the processor preprocesses the collected first simulation data, and the preprocessing includes classification and setting the storage depth.

[0078] S302, the processor encodes the first simulation data according to the storage depth and classification result.

[0079] S303, the processor stores the first simulation data according to the encoding to obtain a simulation database.

[0080] S304, the processor generates a simulation model.

[0081] S305, the processor generates simulation data according to the simulation model and the simulation database.

[0082] S306, the processor compares the simulation data with the actual test data to obtain analysis data.

[0083] S307, the processor corrects the simulation model according to the simulation model, the analysis data, and the correction database.

[0084] By using the electromagnetic simulation correction method provided by the embodiments of the present disclosure, it is possible to pre-collect first simulation data. The first simulation data refers to the circuit types, circuit structures, device types, device electrical parameters of different complete circuits, and the simulation schemes corresponding to the complete circuits. By classifying different complete circuits and setting the storage depth, so that each complete circuit generates its corresponding code. Then, the first simulation data is stored distributively according to the code to generate a simulation database. By encoding each complete circuit and storing the first simulation data distributively according to the code, it is possible to quickly query the simulation scheme in the simulation database according to the target device parameters and target circuit parameters, improving the query rate of the simulation scheme. The distributed storage can be to first slice the first simulation data and then store the sliced first simulation data. By storing the first simulation data distributively, the processing efficiency of the first simulation data and the utilization rate of the storage space can be improved.

[0085] The circuit types include amplifier circuits, filter circuits, voltage regulator circuits, timing circuits, logic circuits, etc. The circuit structure refers to the connection relationship between the various devices in the complete circuit. The device types include resistors, capacitors, inductors, diodes, transistors, etc. The device electrical parameters refer to the electrical parameters of each device, and different parameters are involved for different devices. For example, the electrical parameters of a resistor include the resistance value, the electrical parameters of a capacitor include the capacitance value, the facing area and distance of the capacitor plates, the electrical parameters of an inductor include the inductance value, the equivalent resistance value, equivalent capacitance value, equivalent inductance value of a diode, and the equivalent resistance value, equivalent capacitance value, equivalent inductance value of a transistor. The simulation scheme refers to the simulation operations performed on the complete circuit by previous researchers according to requirements. For example, waveform plotting and numerical calculations are performed on the RLCG (Resistance, Inductance, Capacitance and Conductance) values of a certain device or node.

[0086] Exemplarily, a large amount of first simulation data is collected. The first simulation data includes the circuit type, circuit structure, device type, device electrical parameters of each complete circuit, and the simulation scheme corresponding to the complete circuit. Taking a complete circuit as a unit, first classify each complete circuit according to the circuit type and set the storage depth to 0. After completing the circuit classification according to the circuit type, further divide the different circuits under the same circuit type. The classification basis can be the circuit structure, and set the storage depth of the circuit structure to 1. After completing the circuit classification according to the circuit structure, further classify according to the device type and set the storage depth to 2. After completing the circuit classification according to the device type, further classify according to the device electrical parameters and set the storage depth to 3. And so on until all complete circuits are classified. The circuits in each category after classification are highly similar to each other. Then generate the code of the circuit according to the classification result. The prefixes of the codes of the circuits in each category are highly consistent and similar to each other. For example, the code of a certain circuit is 0A1B2C3D1, which represents the circuit numbered 1 in the circuit type of category A, the circuit structure of category B, the device type of category C, and the device electrical parameters of category D. The code of a certain circuit is 0C1A2C3B1001, which represents the circuit numbered 1001 in the circuit type of category C, the circuit structure of category A, the device type of category C, and the device electrical parameters of category B. Among them, the code corresponding to each circuit has the simulation scheme of the circuit. Perform slicing processing on the first simulation data. Slicing can be performed according to the first two digits of the code, and then store the first simulation data after slicing processing to obtain a simulation database.

[0087] In the process of querying the simulation scheme in the simulation database according to the target device parameters and target circuit parameters, the corresponding code can be generated first according to the circuit type, circuit structure, device type, and device electrical parameters of the simulation model included in the target device parameters and target circuit parameters. Then query for the same or similar circuits in the simulation database by means of code matching, and obtain the simulation scheme corresponding to the circuit as the simulation scheme of the simulation model.

[0088] Combined Figure 4 As shown, another electromagnetic simulation correction method provided by an embodiment of the present disclosure includes:

[0089] S401, the processor preprocesses the collected second simulation data, and the preprocessing includes classification and setting the storage depth.

[0090] S402, the processor encodes the second simulation data according to the storage depth and classification result.

[0091] S403, the processor stores the second simulation data according to the code to obtain a correction database.

[0092] S404, the processor generates a simulation model.

[0093] S405, the processor generates simulation data according to the simulation model and the simulation database.

[0094] S406, the processor compares the simulation data with the actual test data to obtain analysis data.

[0095] S407, the processor corrects the simulation model according to the simulation model, the analysis data and the correction database.

[0096] By adopting the electromagnetic simulation correction method provided by the embodiments of the present disclosure, second simulation data can be collected in advance. The second simulation data refers to the circuit type, circuit structure, device type, device electrical parameters, simulation information of different complete circuits, and the correction scheme corresponding to the complete circuit. By classifying different complete circuits and setting the storage depth, so that each complete circuit generates its corresponding code. Then, the second simulation data is distributed and stored according to the code to generate a correction database. By encoding each complete circuit and distributing and storing the second simulation data according to the code, it is convenient to quickly query the correction scheme in the correction database according to the target device parameters, target circuit parameters and analysis data, and improve the query rate of the correction scheme. The distributed storage can first slice the second simulation data and then store the sliced second simulation data. By distributing and storing the second simulation data, the processing efficiency of the second simulation data and the utilization rate of the storage space can be improved.

[0097] The simulation information includes the simulation data obtained by previous researchers after performing simulation operations on the complete circuit, and the analysis data obtained by comparing with the measured data. The correction scheme refers to the correction operations performed by previous researchers on the complete circuit according to requirements. For example, increasing the resistance value of a certain device or decreasing the magnetic permeability of the dielectric material of a certain inductor.

[0098] Exemplarily, a large amount of second simulation data is collected. The second simulation data includes the circuit type, circuit structure, device type, device electrical parameters, simulation information of each complete circuit, and the corresponding correction scheme for the complete circuit. Taking one complete circuit as a unit, first, classify each complete circuit according to the circuit type, and set the circuit type storage depth to 0. After completing the circuit classification according to the circuit type, further divide the different circuits under the same circuit type. The classification basis can be the circuit structure, and set the circuit structure storage depth to 1. After completing the circuit classification according to the circuit structure, further classify according to the device type, and set the device type storage depth to 2. After completing the circuit classification according to the device type, further classify according to the device electrical parameters, and set the device electrical parameters storage depth to 3. After completing the circuit classification according to the device electrical parameters, further classify according to the simulation information, and set the simulation information storage depth to 4. And so on, until all the complete circuits are classified. The circuits in each category after classification are highly similar to each other. Then generate the code for the circuit according to the classification result. The prefixes of the codes of the circuits in each category are highly consistent and similar to each other. For example, the code of a certain circuit is 0A1B2C3D4F102, indicating the circuit numbered 102 in the A class circuit type, B class circuit structure, C class device type, D class device electrical parameters, and F class simulation information. The code of a certain circuit is 0C1A2C3B4F130, indicating the circuit numbered 130 in the C class circuit type, A class circuit structure, C class device type, B class device electrical parameters, and F class simulation information. Among them, the correction scheme corresponding to the code of each circuit is available. Perform slicing processing on the second simulation data. Slicing can be performed according to the first two digits of the code, and then store the sliced second simulation data to obtain the correction database.

[0099] In the process of querying the correction scheme in the correction database according to the target device parameters, target circuit parameters, and analysis data, first generate the corresponding code according to the circuit type, circuit structure, device type, device electrical parameters, and analysis data of the simulation model included in the target device parameters, target circuit parameters, and analysis data. Then query for the same or similar circuits in the correction database by means of code matching, and obtain the corresponding correction scheme for the circuit as the correction scheme for the simulation model.

[0100] In addition, it is also possible to generate the corresponding code according to the circuit type, circuit structure, device type, device electrical parameters, and simulation data of the simulation model. Then query for the same or similar circuits in the correction database by means of code matching, and obtain the corresponding correction scheme for the circuit as the correction scheme for the simulation model.

[0101] It should be noted that whether to query the simulation scheme in the simulation database according to the simulation data or the analysis data is selected by the researcher according to the specific simulation correction process.

[0102] Combined with Figure 5 As shown, an electromagnetic simulation correction device 50 provided by an embodiment of the present disclosure includes a processor 510 and a memory 520. Optionally, the device 50 may further include a communication interface 530 and a bus 540. Among them, the processor 510, the communication interface 530, and the memory 520 can complete mutual communication through the bus 540. The communication interface 530 can be used for information transmission. The processor 510 can call the logical instructions in the memory 520 to execute the electromagnetic simulation correction method of the above embodiment.

[0103] In addition, when the logical instructions in the above-mentioned memory 520 are implemented in the form of software function units and sold or used as an independent product, they can be stored in a computer-readable storage medium.

[0104] The memory 520, as a computer-readable storage medium, can be used to store software programs and computer-executable programs, such as the program instructions / modules corresponding to the method in the embodiment of the present disclosure. The processor 510 executes functional applications and data processing by running the program instructions / modules stored in the memory 520, that is, implements the electromagnetic simulation correction method in the above embodiment.

[0105] The memory 520 may include a program storage area and a data storage area. Among them, the program storage area can store an operating system and application programs required for at least one function; the data storage area can store data created according to the use of the terminal device, etc. In addition, the memory 520 may include a high-speed random access memory and may also include a non-volatile memory.

[0106] Combined with Figure 6 As shown, an embodiment of the present disclosure provides an electronic device 60, including: a device body 610, and the above-mentioned electromagnetic simulation correction device 50. The electromagnetic simulation correction device 50 is installed on the device body 610. The installation relationship described here is not limited to being placed inside the device body 610, but also includes installation connections with other components of the electronic device 60, including but not limited to physical connections, electrical connections, or signal transmission connections, etc. Those skilled in the art can understand that the electromagnetic simulation correction device 50 can be adapted to a feasible electronic device 60, and further implement other feasible embodiments.

[0107] An embodiment of the present disclosure provides a storage medium storing computer-executable instructions, and the computer-executable instructions are configured to execute the method for electromagnetic simulation correction described above.

[0108] The technical solution of the embodiment of the present disclosure can be embodied in the form of a software product. The computer software product is stored in a storage medium and includes one or more instructions for causing a computer device (which may be a personal computer, a server, or a network device, etc.) to execute all or part of the steps of the method described in the embodiment of the present disclosure. The foregoing storage medium may be a non-transitory storage medium, such as: a USB flash drive, a mobile hard disk, a read-only memory (ROM, Read-Only Memory), a random access memory (RAM, Random Access Memory), a magnetic disk, or an optical disc, etc., which are various media that can store program codes.

[0109] The above description and the drawings fully illustrate the embodiments of the present disclosure so that those skilled in the art can practice them. Other embodiments may include structural, logical, electrical, process, and other changes. Embodiments merely represent possible variations. Unless explicitly required, separate components and functions are optional, and the order of operations may vary. Parts and features of some embodiments may be included in or substituted for parts and features of other embodiments. Moreover, the terms used in this application are only for describing embodiments and are not used to limit the claims. As used in the description of the embodiments and the claims, unless the context clearly indicates otherwise, the singular forms "a", "an", and "the" are intended to include the plural forms as well. Similarly, as used in this application, the term "and / or" refers to any and all possible combinations including one or more of the associated listed items. Additionally, when used in this application, the term "comprise" and its variants "comprises" and / or "comprising" etc. mean the presence of the stated features, wholes, steps, operations, elements, and / or components, but do not exclude the presence or addition of one or more other features, wholes, steps, operations, elements, components, and / or groupings thereof. Without further limitation, an element defined by the statement "comprising one..." does not exclude the presence of additional identical elements in the process, method, or device including the element. In this document, what each embodiment focuses on may be the differences from other embodiments, and the same or similar parts among the various embodiments may be referred to each other. For the methods, products, etc. disclosed in the embodiments, if they correspond to the method part disclosed in the embodiments, the relevant parts may refer to the description of the method part.

[0110] Those skilled in the art can realize that the units and algorithm steps of each example described in combination with the embodiments disclosed herein can be implemented by electronic hardware, or a combination of computer software and electronic hardware. Whether these functions are executed in a hardware or software manner may depend on the specific application and design constraints of the technical solution. The technician can use different methods for each specific application to implement the described functions, but such implementation should not be considered to exceed the scope of the embodiments of the present disclosure. Those skilled in the art can clearly understand that for the convenience and brevity of description, the specific working processes of the systems, devices, and units described above can refer to the corresponding processes in the foregoing method embodiments, and will not be elaborated herein.

[0111] In the embodiments disclosed herein, the disclosed methods, products (including but not limited to devices, equipment, etc.) can be implemented in other ways. For example, the device embodiments described above are merely illustrative. For example, the division of the units can be merely a logical function division, and there can be other division methods in actual implementation. For example, multiple units or components can be combined or integrated into another system, or some features can be ignored or not executed. In addition, the couplings, direct couplings, or communication connections shown or discussed with each other can be through some interfaces. The indirect couplings or communication connections of the devices or units can be in an electrical, mechanical, or other form. The units described as separate components may or may not be physically separated, and the components shown as units may or may not be physical units, that is, they can be located in one place or distributed to multiple network units. Some or all of the units can be selected according to actual needs to implement this embodiment. In addition, the functional units in the embodiments of the present disclosure can be integrated into one processing unit, or each unit can exist physically alone, or two or more units can be integrated into one unit.

[0112] The flowcharts and block diagrams in the accompanying drawings illustrate the architecture, functionality, and operation of possible implementations of systems, methods, and computer program products according to embodiments of the present disclosure. In this regard, each block in the flowchart or block diagram may represent a module, a segment of a program, or a portion of code, which contains one or more executable instructions for implementing a specified logical function. In some alternative implementations, the functions noted in the blocks may occur in a different order than noted in the accompanying drawings. For example, two consecutive blocks may in fact be executed substantially in parallel, or they may sometimes be executed in the reverse order, depending on the functions involved. In the description corresponding to the flowcharts and block diagrams in the accompanying drawings, the operations or steps corresponding to different blocks may also occur in a different order than disclosed in the description, and sometimes there is no specific order between different operations or steps. For example, two consecutive operations or steps may in fact be executed substantially in parallel, or they may sometimes be executed in the reverse order, depending on the functions involved. Each block in the block diagrams and / or flowcharts, and combinations of blocks in the block diagrams and / or flowcharts, can be implemented by a dedicated hardware-based system that performs the specified functions or actions, or can be implemented by a combination of dedicated hardware and computer instructions.

Claims

1. An electromagnetic simulation correction method, characterized in that, Including: Generate a simulation model; Generate simulation data according to the simulation model and the simulation database; Compare the simulation data with the actual test data to obtain analysis data; Modify the simulation model according to the simulation model, the analysis data and the correction database.

2. The electromagnetic simulation correction method according to claim 1, wherein The steps of generating simulation data according to the simulation model and the simulation database include: Retrieve the target device parameters and target circuit parameters of the simulation model; Query the simulation scheme in the simulation database according to the target device parameters and target circuit parameters; Perform a simulation operation on the simulation model according to the simulation scheme to generate simulation data.

3. The electromagnetic simulation correction method according to claim 1 or 2, characterized in that, The steps of modifying the simulation model according to the simulation model, the analysis data and the correction database include: When the analysis data is greater than the error threshold, query the correction scheme in the correction database according to the simulation model and the analysis data; Modify the simulation model according to the correction scheme.

4. The electromagnetic simulation correction method according to claim 1 or 2, characterized in that The steps of generating a simulation model include: Identify the target device parameters and target circuit parameters of the device under test; Generate a simulation model according to the target device parameters and target circuit parameters of the device under test.

5. The electromagnetic simulation correction method according to claim 4, wherein, The steps of identifying the target device parameters and target circuit parameters of the device under test include: Based on the structural image of the device under test, identify the initial device parameters and initial circuit parameters of the device under test; Apply a current to the device under test to obtain the operating parameters of the device under test; Determine the target device parameters and target circuit parameters of the device under test according to the operating parameters, the initial device parameters and the initial circuit parameters.

6. The electromagnetic simulation correction method according to claim 1 or 2, characterized in that The method further includes: Preprocess the collected first simulation data, and the preprocessing includes classification and setting the storage depth; Encode the first simulation data according to the storage depth and the classification result; Store the first simulation data according to the encoding to obtain a simulation database.

7. The electromagnetic simulation correction method according to claim 1 or 2, characterized in that The method further includes: Preprocess the collected second simulation data, and the preprocessing includes classification and setting the storage depth; Encode the second simulation data according to the storage depth and the classification result; Store the second simulation data according to the encoding to obtain a correction database.

8. An electromagnetic simulation correction device, comprising a processor and a memory storing program instructions, characterized in that, The processor is configured to execute the electromagnetic simulation correction method according to any one of claims 1 to 7 when running the program instructions.

9. An electronic device, characterized in that, Including: The device body; The electromagnetic simulation correction device according to claim 8 is installed on the device body.

10. A storage medium stores program instructions, characterized in that, When running, the program instructions are used to cause the computer to execute the electromagnetic simulation correction method according to any one of claims 1 to 7.