Thermally conductive support and assembly comprising thermally conductive support and packaged power device

Abstract

The invention relates to a thermally conductive support and an assembly including a thermally conductive support and an encapsulated power device. Various embodiments of thermally conductive supports are provided. An example thermally conductive support includes a core layer made of metal, a dielectric layer extending over a first side of the core layer, and an electrical connection layer made of an electrically conductive material extending over the first dielectric layer. The dielectric layer has a through-hole exposing the core layer and intended to be filled with an adhesive block that bonds the electronic power device thereto, thereby forming the device / support assembly.

Description

[0001] Cross - reference to related applications

[0002] This application claims the priority of Italian Patent Application No. 102024000000018, filed on January 2, 2024, with the title "Supporto Termicamente Conduttivo E Assieme Comprendente Un Substrato Termicamente Conduttivo Ed Un Dispositivo Elettronico Di Potenza Incapsulato", which is incorporated herein by reference in its entirety to the maximum extent permitted by law. Technical field

[0003] The present disclosure relates to a thermally conductive support and an assembly including the thermally conductive support and an encapsulated electronic power device. In particular, the encapsulated electronic power device is a double - sided cooling device for high heat dissipation. Background art

[0004] As is known, high - voltage and / or high - current power semiconductor devices (e.g., super - junction transistors with a silicon substrate, vertical transistors with a silicon carbide (SiC) or silicon (Si) substrate, planar MOSFET transistors (e.g., based on gallium nitride (GaN)), IGBTs (insulated gate bipolar transistors), etc.) are widely used in applications such as power conversion, where they are subject to high or very high voltage biases (with values even up to 1000 - 2000 V) and carry currents that may switch rapidly.

[0005] These devices are encapsulated such that the final device has high electrical insulation, has a suitable spacing distance between the leads associated with the terminals, and allows for high heat dissipation towards the outside.

[0006] The encapsulated device is bonded to a support or substrate, which is also designed to dissipate as much heat as possible generated by the encapsulated device during operation.

[0007] For this purpose, printed circuit boards (PCBs) are often used currently and are provided with thermal vias (i.e., thermally conductive regions, e.g., made of metal), which pass through the circuit board to facilitate heat removal from the underside (bonded to the substrate) of the encapsulated power device.

[0008] Another substrate currently used in applications where very high heat dissipation is desired is the so - called insulated metal substrate (IMS) support.

[0009] The IMS support is formed by a metal tile covered on one or both sides with a dielectric layer, such as for exampleFigure 1 as shown and described below.

[0010] Figure 1 The IMS support identified by 1 in the figure includes a core layer 2 made of a metal such as aluminum, copper or steel, having a large thickness (e.g., included between 0.5 mm and 1.5 mm), on which a thin dielectric layer 3 is overlaid, e.g., a non-reinforced or glass-reinforced epoxy laminate (such as FR-4 or pre-peg), the thickness of which generally includes between 38 μm and 225 μm.

[0011] The thin dielectric layer 3 is generally covered by a thin connection layer 4 made of a metal such as copper, the thickness of which generally includes between 17 μm and 600 μm, and the thin connection layer 4 is patterned to form electrical connections, any dissipative pads and / or other metal structures.

[0012] Similar to the thin dielectric layer 3, the lower dielectric layer 5 extends here on the back side of the core layer 2, but is sometimes removed.

[0013] The IMS support significantly improves the backside heat dissipation ability of the packaged power device; nevertheless, such dissipation ability is not always sufficient.

[0014] One of the objectives of the present disclosure is to provide a solution that allows for improved heat dissipation. Summary of the Invention

[0015] According to the present disclosure, a thermally conductive support and a device / support assembly are provided, as defined in the appended claims. Description of the Drawings

[0016] To better understand the present disclosure, some embodiments of the present disclosure are now described by way of non-limiting examples with reference to the drawings, wherein:

[0017] Figure 1 is a top perspective view of a known commercial IMS support;

[0018] Figure 2 is a top perspective view of an IMS support according to an embodiment;

[0019] Figure 3 is Figure 2 a cross-section of the IMS support of

[0020] Figure 4 is including Figure 2 a cross-section of an assembly of the IMS support and a packaged power device of

[0021] Figure 5 is Figure 4 a top perspective view of the assembly of

[0022] Figure 6 is a top perspective view of an IMS support used in a component during an intermediate processing step; Figure 4 and Figure 5 ;

[0023] Figure 7 is a cross-section of another component including an IMS support and another encapsulated power device; Figure 2 ;

[0024] Figure 8 is Figure 7 a top perspective view of a component;

[0025] Figure 9 is a top perspective view of an IMS support used in a component during an intermediate processing step; Figure 7 and Figure 8 ;

[0026] Figure 10 is a cross-section of different components including an IMS support and an encapsulated power device having a different bonding configuration; Figure 2 ; Figure 4 ;

[0027] Figure 11 is a top perspective view of an IMS support used in a component during an intermediate processing step; Figure 10 ;

[0028] Figure 12 is a cross-section of different components including an IMS support and an encapsulated power device having another bonding configuration; Figure 2 ; Figure 4 ;

[0029] Figure 13 is a top perspective view of an IMS support used in a component during an intermediate processing step; Figure 12 ;

[0030] Figure 14 is a top perspective view of a component formed by an IMS support and an encapsulated electronic module; Figure 2 ;

[0031] Figure 15 is a cross-section of the component taken along section line XV-XV; Figure 14 ;

[0032] Figure 16 shows an enlarged detail of the component taken along section line XVI-XVI of Figure 14 ; Figure 14 and Figure 15 ;

[0033] Figure 17is in an intermediate processing step Figure 14 - 16 Top perspective view of an IMS support used in a component of

[0034] Figure 18 is a top perspective view of a cooling system, including a cooling plate and a component formed by an IMS support and an encapsulated electronic module;

[0035] Figure 19 is taken along section line XIX-XIX Figure 18 Perspective cross-sectional view of the cooling system of

[0036] Figure 20 is taken along section line XX-XX Figure 18 Perspective cross-section of the cooling system of

[0037] Figure 21 is a cross-section of another cooling system; and

[0038] Figure 22 shows the cooling system in Figure 21 with different fluid configurations. DETAILED DESCRIPTION

[0039] The following description refers to the illustrated arrangements; thus, terms such as "above", "below", "upper", "lower", "right", "left" are related to the drawings and should not be construed in a limiting manner.

[0040] Figure 2 and Figure 3 shows an IMS support 10, which has a basic structure similar to that of the IMS support 1 of Figure 1 and is thus formed by a core layer 11 made of a highly thermally conductive metal. The first side of the core layer 11 is covered with an upper dielectric layer 12, and the second side is covered with a lower dielectric layer 13. In some applications, the lower dielectric layer 13 may be absent.

[0041] A connecting layer 14 of metal extends above the upper dielectric layer 12 and is intended for forming connections, dissipating pads, and / or other metal structures.

[0042] The core layer 11 is typically made of copper, aluminum, or steel, and the core layer 11 has a large thickness (e.g., including between 0.5 and 1.5 mm); the upper dielectric layer 12 and the lower dielectric layer 13 are formed by, for example, a glass-reinforced epoxy laminate (e.g., FR-4 or prepreg), and the thickness typically includes between 100 μm and 300 μm; the connecting layer 14 is typically made of copper, and the thickness includes, for example, between 17 μm and 600 μm.

[0043] The IMS support 10 has a main dimension in a plane parallel to the Cartesian plane XY of the Cartesian reference system XYZ, and its thickness (in the direction parallel to the vertical axis Z of the Cartesian reference system XYZ) is given by the sum of the thicknesses of the layers 11 - 14.

[0044] The connecting layer 14 and the upper dielectric layer 12 are partially removed, here at a substantially central position and in any case at an appropriate position (as will be discussed below), and a hole 18 exposing the core layer 11 is formed.

[0045] The hole 18 is formed, for example, by a lithography process and is intended to be filled with a thermally conductive bonding material (such as solder paste), which allows for direct thermal connection to a power device or module to be soldered onto the IMS support 10 and is expected to have a high heat loss.

[0046] The area (in the main extension plane of the IMS support 10) and the position of the hole 18 in the main extension plane are selected based on the specific device or module to be attached, as shown in some embodiments to be described in detail below.

[0047] Figure 4 - 6 A device / support assembly 20 of the IMS support 10 including a power device 21 and Figure 2 - 3 is shown. Figure 4 - 6 The power device 21 (e.g., a power transistor) is of the double-sided cooling type and has connection terminals facing the main bonding surface.

[0048] Figure 4 - 6 The power device 21 is also of the surface-mount type.

[0049] As Figure 4 shown in the cross-section, the power device 21 includes a die 26, where a first contact pad 22 is provided on one side of the die 26 (in Figure 4 here, at the bottom) and a second contact pad 24 is provided on the other side (in Figure 4 here, at the top).

[0050] In particular, the power device 21 has three or four output leads, including a first lead 23A which is typically a drain lead, and a second lead 25A which is typically a source lead (power lead), a gate lead, and possibly a signal source lead.

[0051] The first lead 23A is coupled to the first contact pad 22 of the power device 21 and is part of a first connecting element 23 formed by a lead frame (also indicated by 23 below), which also forms a dissipation area 23B.

[0052] The second lead 25A is coupled to a second contact pad 24 (not all visible). Here, the second lead 25A is part of a second connecting element 25, which further includes at least one dissipation region 25B, each dissipation region being formed by a clip (also denoted by 25B hereinafter). Here, the second lead 25A is part of a second connecting element 25, which further includes at least one dissipation region 25B, each dissipation region being formed by a clip (also denoted by 25B hereinafter).

[0053] The die 26 is embedded in a package 27 made of an electrically insulating material such as resin, the package 27 generally having a parallelepiped shape and defining a first major surface 21A and a second major surface 21B of the power device 21.

[0054] The lead frame 23 is exposed and extends flush over most of the first major surface 21A.

[0055] At least one clip 25B of the second connecting element 25 (usually a source connecting element) is exposed and flush with the second major surface 21B of the power device 21. Thus, the power device 21 is a double-sided cooling device.

[0056] The power device 21 is bonded to an IMS support 10, which has a hole 18. The size (area) of the hole 18 is slightly smaller than the size of the dissipation region 23B of the lead frame 23 and faces the first major surface 21A of the power device 21 (the area of the hole 18 is slightly smaller than the facing area of the dissipation region 23B of the lead frame 23).

[0057] In Figure 4 - 6 's embodiment, an adhesive mass 30 (usually a conductive and thermally conductive solder paste) completely fills the hole 18. The adhesive mass 30 projects partially from the hole 18 in height (parallel to the vertical axis Z of the Cartesian reference system XYZ) and bonds to the lead frame 23.

[0058] Furthermore, the adhesive mass 30 extends over the upper dielectric layer 12, where it forms a first bonding region 34, as discussed below.

[0059] In Figure 4 、 5 's device / support assembly 20, the connection layer 14 has been patterned and forms a first conductive track 31 and a second conductive track 32.

[0060] The first conductive track 31 extends (after bonding the power device 21) on one side of the power device 21 (on the left side in Figure 4 - 6 ), and is electrically coupled to the lead frame 23 through the first bonding region 34, which is arranged above the first conductive track 31 and below the first lead 23A.

[0061] The second conductive track 32 (after bonding the power device 21) extends on the opposite side of the power device 21 (on the Figure 4 - 6 right side in

[0062] In Figure 4 and Figure 5 of the power device 21, the dissipation plate 36 is bonded to the second main surface 21B of the power device 21.

[0063] After defining (pattern-forming) the conductive tracks 31 and 32, the adhesive block 30, the first bonding region 34, and the second bonding region 35 are formed on the IMS support 10, as Figure 6 shown in Figure 6 which shows the IMS support 10 after defining (pattern-forming) the conductive tracks 31 and 32 from the Figure 2 connection layer 14 of

[0064] In particular, here, the adhesive block 30 and the bonding regions 34, 35 are formed by dispensing the same solder material, which is applied using the same tool in a known manner during the dispensing step.

[0065] In practice, here, the dissipation area 23B of the lead frame (the first connection element 23) contacts the IMS substrate 10 and transfers heat to the IMS substrate 10, while the dissipation area 25B of at least one of the second connection elements 25 dissipates heat outward.

[0066] Therefore, Figure 4 and Figure 5 of the device / support assembly 20 has excellent thermal contact between the lead frame 22 and the core layer 11 of the IMS support 10, which also allows for high downward heat dissipation due to heat transfer from the power device 21 to the core layer 11.

[0067] This allows the RThj-amb (junction-to-ambient thermal resistance) value to be significantly reduced (overall from 13% to 30%) compared to a device directly bonded to the upper dielectric layer 12.

[0068] Figure 7 and Figure 8 show the device / support assembly 40 in the case of a power device 41 with double-sided cooling, which has connection terminals that extend flush on the main surface opposite the bonding surface.

[0069] Here, the power device 41 is also a power transistor formed, for example, in the die 46 and having four terminals. Here, the terminals include: a first connection element 43A coupled to the first contact pad 42, which is typically a drain connection element; and a second connection element 45A coupled to the contact pad 44 that is only partially visible in Figure 7 and which is typically a source (power supply), gate, and possibly additional source (signal source) connection element (see in particular Figure 8 ).

[0070] The die 46 is embedded in a package 47 made of an electrically insulating material, which generally has a parallelepiped shape and partially surrounds the connection elements 43, 45 and defines a first main surface 41A and a second main surface 41B of the power device 41.

[0071] Here, the first connection element 43 is formed into the first lead frame, coupled to the first side of the die 46 (at the top in Figure 7 ) and extends almost completely flush with the second main surface 41B of the power device 41. Here, the first connection element 43 is formed in the first lead frame, coupled to the first side of the die 46 (at the top in Figure 7 ) and extends almost completely flush with the second main surface 41B of the power device 41.

[0072] Here, the second connection element 45 is formed by two mutually joined parts: a first part (dissipation area 45B), formed in the second lead frame (comb-shaped lead frame), coupled to the second side of the die 46 (at the bottom in Figure 7 ) and extending mainly flush with the first main surface 41A of the power device 41; a second part (second lead 45A), formed by the first lead frame (the first lead frame also forms the first connection element 43) and having a part flush with the second main surface 41B of the power device 41.

[0073] The power device 41 is joined to the IMS support 10 at its first main surface 41A. Here, the size (area) of the hole 18 in the IMS support 10 is slightly smaller than the externally facing area of the dissipation area 45B' of the second connection element 45.

[0074] In the Figure 7 embodiment, the adhesive block 50 (usually a conductive and thermally conductive solder paste) completely fills the hole 18, protrudes from it in height (along the vertical axis Z), and adheres to the dissipation area 45B of the second end connection element 45.

[0075] Figure 7 - 9 The device / support assembly 40 of Figure 2 - 3formed by the connection layer 14.

[0076] The conductive tracks 51 and 52 are completely similar to Figure 5 the conductive tracks 31, 32, and are coupled to the first connection element 43 and the second connection element 45 through the first bonding region 54 and the second bonding regions 54, 55 respectively. The bonding regions 54, 55 are made of a conductive bonding material (such as the same material as the adhesive block 50). In this embodiment, the first bonding region 54 is different from the adhesive block 50.

[0077] Here, the dissipation plate 56 is bonded to the second main surface 41B of the power device 41.

[0078] After defining the formation of the conductive tracks 51 and 52, the adhesive block 50, the first bonding region 54, and the second bonding region 55 are formed on the IMS support 10, as Figure 9 shown in Figure 9 FIG. shows the IMS support 10 after defining the formation of the conductive tracks 51 and 52 and forming the adhesive block 50 and the bonding regions 54, 55.

[0079] In particular, the adhesive block 50 and the bonding regions 54, 55 can be formed by dispensing the same bonding material (in a known manner, dispensed in a single step).

[0080] In practice, here, the dissipation region 45B of at least one of the second connection elements 45 contacts the IMS substrate 10 and transfers heat to it, while the dissipation region 43B of the first connection element 43 dissipates heat outward.

[0081] Therefore, Figure 7 and Figure 8 the device / support assembly 40 of also has excellent thermal contact between the dissipation regions 45B, 43B of at least one of the second connection elements 45 and the core layer 11 of the IMS support 10. In this way, high heat transfer from the power device 41 to the core layer 11 is obtained, while the first connection element 43 allows upward heat dissipation through the dissipation plate 56.

[0082] Figure 10 and Figure 11 FIG. shows a device / support assembly 60 including Figure 4 a power device 21 (where the connection terminals extend on the main bonding surface and have double-sided cooling) in the case where the hole 18 is narrower than the facing area of the dissipation region 23 of the lead frame 23.

[0083] In this case, the adhesive block (indicated by 64) fills the hole 18 ( Figure 11) and has a collar 68 that protrudes above the hole 18 and laterally from the hole 18. In practice, the collar 68 extends above the upper dielectric layer 12 of the IMS support 10, as can be clearly seen from Figure 11 as is clearly visible, Figure 11 shows the IMS support 10 after applying the welding material to form the adhesive block 64. Figure 11 Also shown therein is the bonding area 65 for bonding the second connecting element 25.

[0084] Thus, in this case, the adhesive block 64 also forms a first bonding area for bonding the first lead 23A (as in the Figure 4 - 6 embodiment, which is indicated by 34).

[0085] In practice, the collar 68 allows the power device 21 to be directly bonded to the upper dielectric layer 12 of the IMS support 10, thereby increasing the bonding force and allowing the visibility of the welding, as desired in some applications, and providing high dissipation downward, as discussed for Figure 4 - 6 discussed.

[0086] Here, the welding material is also of the conductive type and allows an electrical connection between the first lead 23A and the first conductive track 31, connecting the first lead 23A thereto).

[0087] Figure 7 - 9 The adhesive block 50 of the device / support assembly 40 of can also have a collar similar to the collar 68 of 10-11 (the manner not shown); however, for the device / support assembly 40, there will be a first bonding area 54 different from the adhesive block 64.

[0088] Figure 12 and Figure 13 shows a device / support assembly 70 including a Figure 4 power device 21 (the connection terminals extend on the main bonding surface and have double-sided cooling) in the case where the hole 18 has exactly the same size as the facing area of the dissipation area 23B of the lead frame 23.

[0089] Here, the upper dielectric layer (indicated by 12') of the IMS support (indicated by 10') is thicker than that in Figure 4 , so the hole 18 is deeper.

[0090] The adhesive block (indicated by 74) completely fills the hole 18 and is in electrical contact with the first lead 23A and the first conductive track 31 (the head conductive track).

[0091] The bonding area 75 extends between the second lead 25B of the power device 21 and the second conductive track 32.

[0092] In this way, an excellent heat dissipation effect is obtained.

[0093] Figure 14 - 17 relates to a device / support assembly 80 in the case where a power device 81 forms a module including a plurality of dies 86 ( Figure 15 and Figure 16 two of which are visible). For example, the power device 81 can be a bridge circuit and includes four dies 86, which are coplanar and arranged side by side in pairs. Alternatively, the power device 81 can be a half-bridge circuit, where a first plurality of dies are connected in parallel with each other and a second plurality of dies are connected in parallel with each other.

[0094] The power device 81 has a first main surface 81A and a second main surface 81B defined by a package 87, and is bonded to the Figure 2 - 3 IMS support 10 via the first main surface 81A.

[0095] In Figure 15 - 16 , each die 86 has a plurality (usually three) of contact pads, which are coupled to each other and to terminals 83, 85 through metal regions formed in two DBC (Direct Bonded Copper) substrates 88.

[0096] The DBC substrate 88 is formed in a known manner by a first conductive layer 88A of metal disposed inside, a second conductive layer 88B of metal disposed outside, and an insulating layer 88C, usually a ceramic layer, located in the middle.

[0097] The first conductive layer 88A of each DBC substrate 88 is patterned so as to couple the die 86 according to the desired power device, and the second conductive layer 88B of each DBC substrate 88 is arranged flush with the corresponding main surfaces 81A, 81B of the power device 81. In particular, the second conductive layers 88B of the DBC substrates 88 can have the same area; in addition, the terminals 83, 85 are symmetric with respect to the middle horizontal plane (parallel to the horizontal plane XY) and have the same height as the package 87 (along the vertical axis Z). In this way, the power device 81 is reversible and can be bonded to the substrate 10 with either of the main surfaces 81A, 81B.

[0098] The terminals 83, 84 are coupled to specific regions of the first conductive layer 88A of one or two DBC substrates 88 (in the Figure 16 details, the lower DBC substrate); the material of the package 87 extends between the terminals 83, 84 (as Figure 14 visible), thus ensuring good electrical insulation.

[0099] The terminals 83, 84 are coupled to conductive tracks 91, 92 extending on the upper dielectric layer 12 of the IMS support 10 formed by the upper dielectric layer 12 of Figure 2 - 3 . The terminals 83, 84 are connected to theFigure 9 The bonding regions 54, 55 are joined to similar bonding regions 94, 95.

[0100] The adhesive block (designated here as 90) fills the hole 18 of the IMS support 10 and contacts the lower main surface 81A of the power device 81.

[0101] The adhesive block 90 and the bonding regions 94, 95 can be formed of soldering materials commonly used in the semiconductor industry, as in the previous example, or the joining can be performed by using sintering, with the PAS (Package Attachment Sintering) technique, applying a light pressure (which compresses the sintering material). In this way, a very compact soldering is obtained, which avoids the formation of voids.

[0102] The power device 81 is joined to the dissipation plate 96 on its second main surface 81B, for example, by bonding with an adhesive layer 89. The adhesive layer 89 can be made of the same joining material as the adhesive block 90 and the bonding regions 94, 95. Thus, it can be a soldering or sintering material.

[0103] Here, the dissipation plate 96 and the IMS substrate 10 are provided with holes 97, 98 to allow the passage of the screw 82 and the joining to a cooling system (not shown). Possibly, a bushing or a hollow column 99 can be arranged between the dissipation plate 96 and the IMS substrate 10 in a known manner.

[0104] In Figure 14 - 17 the device / support assembly 80, the lower dielectric layer 13 has been removed.

[0105] Figure 18 - 20 There is shown Figure 14 - 17 an electronic system 100 including

[0106] the device / support assembly 80 and a cooling structure 101.

[0107] In particular, in Figure 18 - 20 the embodiment shown, Figure 2 the lower dielectric layer 13 is removed and the core layer 11 is joined (e.g., soldered) to a closing plate 105 that closes upward the chamber 106 in the drawer element 107 of the cooling structure 101. The closing plate 105 is made of a metal having high thermal conductivity, for example.

[0108] The chamber 106 is open at the ends to allow the flow of a cooling fluid (e.g., a liquid (water or oil) or air).

[0109] Dissipation elements 111 (e.g., fins, protrusions or columns) extend from the lower surface of the closing plate 105 towards the interior of the chamber 106, thus allowing high heat removal.

[0110] A sealing element 108 (e.g., a peripheral rubber gasket) that allows the closure plate 105 to snap-fit prevents leakage.

[0111] The screws 110 ensure that the device / support member assembly 80 is firmly attached to the cooling structure 101.

[0112] In this way, there is efficient heat transfer from the power device 81 to the cooling structure 101 through the adhesive blocks 90, the core layer 11, and the closure plate 105.

[0113] Figure 21 , Figure 22 An electronic system 120 is shown, in which Figure 14 - 17 the device / support member assembly 80 is attached to the lower cooling structure 121 on one side and to the upper cooling structure 122 on the opposite side.

[0114] Here, the lower cooling structure 121 and the upper cooling structure 122 are the same as the Figures 18 to 20 cooling structure 101.

[0115] Specifically, the lower cooling structure 121 is attached to the IMS support 10 (also referred to hereinafter as the lower IMS support 10), and the upper cooling structure 122 is attached to the device / support member assembly 80 by the insertion of the upper IMS support (here denoted by 10").

[0116] Since the power device 81 is reversible, the upper IMS support 10" is formed similarly to the lower IMS support 10, except that the adhesive blocks 90 and the bonding areas 94, 95 (not visible in Figure 21 , Figure 22 ) are present on only one of the two IMS supports 10, 10".

[0117] The electronic system 120 may further include a supply assembly and connection elements (not shown) for supplying a cooling fluid to the lower cooling structure 121 and the upper cooling structure 122.

[0118] For example, the supply assembly may be shaped to form a circulating supply system in which the cooling fluid flows in a consistent direction in the lower cooling structure 121 and the upper cooling structure 122, as shown in Figure 21 , or in the opposite direction, as shown in Figure 22 .

[0119] Due to the partial removal of the upper dielectric layer 12 of the IMS supports 10, 10', 10" and the presence of the adhesive blocks 30, 50, 64, 90 that form low-resistance heat paths, the Figures 4 - 22 device / support member assembly described in allows the heat generated in the power device to be efficiently transferred outwards through the core layer 11.

[0120] In particular, the applicant's research shows that, relative to the use of a standard IMS support, the described device / support assembly provides a reduction in the thermal resistance of the junction environment of up to 13%.

[0121] Finally, it is clear that the described and illustrated IMS supports and device / support assemblies can be modified and varied without departing from the scope of the disclosure as defined in the appended claims. For example, different described embodiments can be combined to provide further solutions.

[0122] For example, the collar 68 may not be adjacent to Figure 11 the adhesive block 64, and / or may be interrupted, formed by a plurality of adjacent solder joints, extending entirely around the hole 18 or along a partial perimeter of the hole 18.

[0123] Broadly speaking, the disclosure includes the following examples.

[0124] 1. A thermally conductive support (10; 10'; 10”) for electronic applications, comprising:

[0125] a core layer (11), made of metal, having a first face and a second face;

[0126] a dielectric layer (12; 12'), extending on the first face of the core layer (11); and

[0127] an electrical connection layer (14), made of a conductive material, extending on the first dielectric layer (12; 12'),

[0128] wherein the dielectric layer (12; 12') has a through-hole (18) exposing the core layer (11), and the electrical connection layer (14) extends around the through-hole (18).

[0129] 2. The thermally conductive support according to Example 1, further comprising an adhesive block (30; 50; 64; 90) extending in the through-hole (18).

[0130] 3. The thermally conductive support according to the foregoing example, wherein the adhesive block (30; 50; 64; 90) completely fills the through-hole (18).

[0131] 4. The thermally conductive support according to Example 2 or 3, comprising a collar (68) of an adhesive material extending on the dielectric layer (12; 12') and at least partially surrounding the through-hole (18).

[0132] 5. The thermally conductive support according to the foregoing example, wherein the collar (68) is formed by the adhesive block (64).

[0133] 6. The thermally conductive support according to any of the preceding examples, wherein the electrical connection layer (14) is patterned and forms a plurality of electrical connection tracks (31, 32; 51, 52; 91, 92), and the IMS support (10; 10'; 10") further includes a plurality of bonding areas (34, 35; 54, 55; 65; 75) extending on the electrical connection tracks (31, 32; 51, 52; 91, 92), and the bonding areas (34, 35; 54, 55; 65; 75) and the bonding blocks (30; 50; 64; 74; 90) are formed of the same dispensed bonding material.

[0134] 7. The thermally conductive support according to any of the preceding examples, wherein the bonding blocks (30; 50; 64; 74; 90) are made of sintered material or welding material.

[0135] 8. An apparatus / support assembly (20; 40; 60; 70; 80) comprising an electronic power device (21; 41; 81) and a thermally conductive support (10; 10', 10") according to any of Examples 2 - 7, the electronic power device being encapsulated in a package block (27; 47; 87) of an electrically insulating material, the package block (27; 47; 87) defining a first major surface and a second major surface (21A, 21B; 41A, 41B; 81A, 81B), the electronic power device including a first dissipation area (23B; 45B; 88) surrounded by the package block (27; 47; 87) and flush with the first major surface (21A; 41A; 81A), wherein the first dissipation area (23B; 45B; 88) is joined to the bonding block (30; 50; 64; 74; 90) of the thermally conductive support (10; 10', 10").

[0136] 9. The apparatus / support assembly according to the preceding example, when dependent on Example 6, wherein the electronic power device (21; 41) includes a die (26; 46) having a first contact pad (22; 44), wherein a first output terminal (23A; 45A) of the electronic power device (21; 41) extends from a side surface of the electronic power device, is electrically coupled to the first contact pad (22; 44) through the first dissipation area (23B; 45B) and is joined to the first electrical connection track (31; 52) of the plurality of electrical connection tracks (31, 32; 51, 52).

[0137] 9bis. The apparatus / support assembly according to the preceding example, wherein the first output terminal (23A) and the first dissipation area (23B) are formed by a lead frame (23).

[0138] 9ter. The device / support member assembly according to Example 9, wherein the first dissipation region (45B) is formed by a lead frame or a clip, the first output terminal (45A) has a portion flush with the second main surface (41B) of the electronic power device (41), and the first output terminal (45A) and the first dissipation region (45B) are joined to each other.

[0139] 9quater. The device / support member assembly according to the foregoing example, wherein the first output terminal (45A) and the second output terminal (43A) are formed in the same lead frame.

[0140] 10. The device / support member assembly according to Example 8 or 9, when dependent on Example 6, wherein the die (26; 46) includes a second contact pad (24; 42), and the second output terminal (25A; 43B) of the electronic power device (21; 41) extends from a side surface of the electronic power device and is electrically coupled to the second contact pad (24; 42) through a second dissipation region (25B; 43B) that extends flush with the second main surface (21B; 41B) of the electronic power device (21; 41), and is joined to at least one second electrical connection track (32; 51) among the plurality of electrical connection tracks (31, 32; 51, 52).

[0141] 11. The device / support member assembly according to the foregoing example, wherein the first output terminal (23A; 45A) extends from a first side of the side surface, and the second output terminal (25A; 43A) extends from a second side of the side surface of the electronic power device (21; 41) opposite to the first side.

[0142] 12. The device / support member assembly according to Example 8, when dependent on Example 6, wherein the electronic power device is a module (81), the module (81) includes a plurality of dies (86) and a plurality of output terminals (87) extending from at least one side surface of the electronic power module (81), the dies (86) have corresponding contact pads, and the output terminals (87) are electrically coupled to the contact pads and joined to the electrical connection tracks through corresponding bonding regions (91, 92).

[0143] 13. The device / support member assembly according to the foregoing example, further comprising at least one DBC (Direct Bonded Copper) substrate (88), the substrate (88) having a first conductive layer (88B) that forms a first metal dissipation region; an intermediate insulating layer (88C) and a second conductive layer (88A), the second conductive layer (88A) forming at least one electrical connection region that couples the contact pad of at least one die (86) among the plurality of dies (86) to at least one output terminal (87) among the plurality of output terminals.

[0144] 14. An electronic system, comprising a device / support assembly (80) according to example 12 or 13, including a first cooling structure (101; 121) including a core layer (11) attached to a thermally conductive support (10; 10'; 10').

[0145] 15. The electronic system according to the foregoing example, including a second cooling structure (122) attached to a second main surface of the device / support assembly (80).

Claims

1. A thermal support for electronic applications, comprising: A core layer, made of metal, having a first side and a second side; A dielectric layer, extending on the first side of the core layer; And An electrical connection layer, made of a conductive material, extending on the first dielectric layer, Wherein the dielectric layer has a through-hole exposing the core layer, and the electrical connection layer extends around the through-hole.

2. The thermal support according to claim 1, further comprising an adhesive block extending in the through-hole.

3. The thermal support according to claim 1, wherein the adhesive block completely fills the through-hole.

4. The thermal support according to claim 2, comprising a collar of adhesive material extending on the dielectric layer and at least partially surrounding the through-hole.

5. The thermal support according to claim 4, wherein the collar is formed by the adhesive block.

6. The thermal support according to claim 2, wherein the electrical connection layer is patterned and forms a plurality of electrical connection tracks, and the support further comprises a plurality of bonding areas extending on the electrical connection tracks, and the bonding areas and the adhesive block are formed of the same dispensed bonding material.

7. The thermal support according to claim 2, wherein the adhesive block is a sintered material or a soldered material.

8. A device / support assembly, comprising an electronic power device and the thermal support according to claim 2, wherein the electronic power device is encapsulated in a package block of an electrically insulating material, the package block defining a first major surface and a second major surface, the electronic power device comprising a first dissipation area surrounded by the package block and arranged flush with the first major surface, wherein the first dissipation area is bonded to the adhesive block of the thermal support.

9. The device / support assembly according to claim 8, wherein the electrical connection layer is patterned and forms a plurality of electrical connection tracks, the support further comprising a plurality of bonding areas extending on the electrical connection tracks, the bonding areas and the adhesive block being formed of the same dispensed bonding material, and wherein the electronic power device comprises a die having a first contact pad, wherein a first output terminal of the electronic power device extends from a side surface of the electronic power device, is electrically coupled to the first contact pad through the first dissipation area, and is bonded to a first electrical connection track among the plurality of electrical connection tracks.

10. The device / support assembly according to claim 8, wherein the electrical connection layer is patterned and forms a plurality of electrical connection tracks, the support further comprising a plurality of bonding areas extending on the electrical connection tracks, the bonding areas and the adhesive block being formed of the same dispensed bonding material, and wherein the die comprises a second contact pad, wherein a second output terminal of the electronic power device extends from a lateral surface of the electronic power device, is electrically coupled to the second contact pad through a second dissipation area extending flush with the second major surface of the electronic power device, and is bonded to at least one second electrical connection track among the plurality of electrical connection tracks.

11. The device / support assembly according to claim 10, wherein the first output terminal extends from a first side of the side surface of the electronic power device, and the second output terminal extends from a second side of the side surface of the electronic power device opposite to the first side.

12. The device / support member assembly according to claim 9, wherein the electronic power device is a module, the module including a plurality of die and a plurality of output terminals extending from at least one side surface of the electronic power module, the plurality of die having respective contact pads, the plurality of output terminals being electrically coupled to the contact pads and being bonded to the plurality of electrical connection tracks through respective bonding areas.

13. The device / support member assembly according to claim 12, further comprising at least one direct bonded copper (DBC) substrate having a first conductive layer forming a first metal dissipation area, an intermediate insulating layer, and a second conductive layer, the second conductive layer forming at least one electrical connection area coupling a contact pad of at least one of the plurality of die to at least one of the plurality of output terminals.

14. An electronic system, comprising the device / support member assembly according to claim 12, including a first cooling structure attached to a core layer of the thermally conductive support.

15. The electronic system according to claim 14, including a second cooling structure attached to a second major surface of the device / support member assembly.

16. An electronic system, comprising the device / support member assembly according to claim 13, including a first cooling structure attached to a core layer of the thermally conductive support.

17. The electronic system according to claim 16, including a second cooling structure attached to a second major surface of the device / support member assembly.

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