Ultrathin quartz wafer structure, preparation method and quartz resonator

Abstract

The invention relates to the technical field of semiconductors, and discloses an ultrathin quartz wafer structure, a preparation method and a quartz resonator. At least one wafer reinforcing groove is formed in a quartz wafer main body, and a wafer function groove is formed in each wafer reinforcing groove; the wafer reinforcing structure is formed by at least one side wall of the wafer reinforcing groove and the quartz wafer main body, so that strength amplification of different degrees can be provided for the overall strength of the quartz wafer structure; at least one side wall of each wafer functional groove and the side wall of the wafer reinforcing groove in the direction of the side wall jointly form a two-stage step-shaped strength structure, and a functional wafer formed by a bottom surface platform of each wafer functional groove can be protected and supported. Meanwhile, by deploying the wafers distributed to each type of quartz wafers and the wafer reinforcing structure adopted by each wafer, the overall strength structure of the prepared quartz wafers is improved as much as possible while the preparation requirements of the quartz wafers are ensured, and the production qualification rate of products is improved.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and particularly to an ultra-thin quartz wafer structure, a preparation method and a quartz resonator. Background Art

[0002] With the development of communication technology, the demand for ultra-high frequency quartz wafers is increasing. The ultra-high frequency quartz wafer is extremely thin, and it is difficult to achieve its thickness by using conventional mechanical grinding and polishing processes. In subsequent processes and packaging processes, the quartz wafer is very prone to breakage, resulting in a low production qualification rate.

[0003] Currently, the method for manufacturing an ultra-thin quartz wafer is to etch a recessed platform on the surface of a relatively thick quartz wafer, and the thickness of the quartz at the bottom of the platform is the final required thickness. In order to ensure the processability, multiple quartz wafers are on the same 3-inch / 4-inch wafer. In order to ensure the structural strength, the thickness of the quartz wafer is often relatively thick, such as 120 μm. However, if the quartz wafer is too thick, it will be difficult for the small-size ultra-high frequency quartz wafer to meet the performance requirements, and it has become a trend to reduce the thickness of the quartz wafer.

[0004] Therefore, how to improve the overall structural strength of the quartz wafer while reducing the thickness of the quartz wafer structure is a technical problem that needs to be solved urgently. Summary of the Invention

[0005] The present invention provides an ultra-thin quartz wafer structure, a preparation method and a quartz resonator, aiming to solve at least one of the above technical problems.

[0006] To achieve the above object, the present invention provides an ultra-thin quartz wafer structure, including: A quartz wafer body configured to have a first thickness value; At least one wafer strengthening groove provided on the quartz wafer body, and the bottom surface platform of the wafer strengthening groove is configured to have a second thickness value; Wherein, at least one side wall of the wafer strengthening groove and the quartz wafer body form a wafer strengthening structure; A wafer functional groove provided on the bottom surface platform of each wafer strengthening groove, and the bottom surface platform of the wafer functional groove is configured to have a third thickness value; Wherein, the bottom surface platform of each wafer functional groove forms a functional wafer, and at least one side wall of each wafer functional groove and at least one side wall of the wafer strengthening groove in the side wall direction thereof jointly form a two-stage stepped strength structure.

[0007] Optionally, the first thickness value of the quartz wafer body is configured to be the thickness value of the wafer.

[0008] Optionally, the range of the first thickness value of the quartz wafer body is 80um - 500um.

[0009] Optionally, the range of the second thickness value of the bottom surface platform of the wafer reinforcement groove is 15um - 100um.

[0010] Optionally, the range of the third thickness value of the bottom surface platform of the wafer functional groove is 5um - 30um.

[0011] Optionally, the four side walls of the wafer reinforcement groove are connected to the quartz wafer body, and the connection parts of the four side walls of the wafer reinforcement groove and the quartz wafer body form an annular wafer reinforcement structure surrounding the wafer reinforcement groove.

[0012] Optionally, one side wall of the wafer reinforcement groove is connected to the quartz wafer body, and the connection part of one side wall of the wafer reinforcement groove and the quartz wafer body forms a unilateral wafer reinforcement structure.

[0013] In addition, to achieve the above object, the present invention also provides a method for preparing an ultra-thin quartz wafer structure for preparing the ultra-thin quartz wafer structure as described above, including the following steps: S1: Obtain the quartz wafer preparation requirement information within the target period; wherein, the quartz wafer preparation requirement information includes the quartz wafer demand frequency and the quartz wafer demand quantity of each type of quartz wafer; S2: According to the comparison table of the quartz wafer demand frequency and the candidate type set of wafer reinforcement structures with different frequencies, determine the type set of wafer reinforcement structures for each type of quartz wafer, and use the candidate set of wafer reinforcement structures and the quartz wafer demand quantity of each type of quartz wafer to generate a quartz wafer preparation task; Among them, the candidate set of wafer reinforcement structures stores several types of wafer reinforcement structures formed by different numbers of side walls of the wafer reinforcement groove and the quartz wafer body; S3: Obtain the wafer resource information configured for the quartz wafer preparation task, and extract the size data of each wafer recorded in the wafer resource information; S4: Convert the candidate set of wafer reinforcement structures of each type of quartz wafer in the quartz wafer preparation task into a candidate set of quartz wafer sizes, and based on the candidate set of quartz wafer sizes and the quartz wafer demand quantity of each type of quartz wafer, considering the size data of each wafer, use an optimization algorithm to generate the best deployment strategy of the wafer on the wafer when executing the quartz wafer preparation task, so that the prepared wafers have the highest overall strength under the existing wafer resources; S5: Generate a quartz wafer preparation instruction according to the wafer assigned to each type of quartz wafer recorded in the best deployment strategy and the wafer reinforcement structure used for quartz wafer preparation on each wafer, and drive the corresponding quartz wafer preparation equipment to perform the corresponding quartz wafer preparation actions.

[0014] Optionally, step S4 specifically includes: S41: Convert the candidate set of wafer enhancement structures for each type of quartz wafer in the quartz wafer preparation task into a candidate set of quartz wafer sizes. Based on the candidate set of quartz wafer sizes for each type of quartz wafer and the required quantity of quartz wafers, consider the size data of each wafer; S42: Divide each type of wafer enhancement structure in the candidate set of wafer enhancement structures into several strength levels according to the number of connections between the quartz wafer body and the side wall of the wafer enhancement groove. Taking the wafer enhancement structure used for quartz wafer preparation performed on the wafer assigned to each type of quartz wafer within the range of the candidate set of wafer enhancement structures corresponding to this type of quartz wafer as the first constraint condition, and taking the fact that after each type of quartz wafer is assigned to the corresponding wafer, according to the size data of each wafer and the quartz wafer size corresponding to the wafer enhancement structure used for quartz wafer preparation on this wafer, the calculated preparable quantity of each type of quartz wafer is not less than the required quantity of quartz wafers of this type as the second constraint condition, and taking the highest sum of the strength levels corresponding to the wafer enhancement structures used by all quartz wafers as the optimization objective, optimize and solve the wafers assigned to each type of quartz wafer and the wafer enhancement structure used for each wafer; S43: According to the wafers assigned to each type of quartz wafer and the wafer enhancement structure used for each wafer, construct the best deployment strategy of the wafers on the wafers when performing the quartz wafer preparation task.

[0015] In addition, to achieve the above object, the present invention also provides a quartz resonator, including the ultra-thin quartz wafer structure described in any one of the above or an ultra-thin quartz wafer structure prepared by the ultra-thin quartz wafer structure preparation method described in any one of the above.

[0016] The beneficial effects of the present invention are as follows: A structure of an ultra-thin quartz wafer, a preparation method, and a quartz resonator are provided. By providing at least one wafer strengthening groove on the main body of the quartz wafer, and arranging a wafer functional groove in each wafer strengthening groove, with at least one side wall of the wafer strengthening groove and the main body of the quartz wafer forming a wafer strengthening structure, it can provide different degrees of strength increase for the overall strength of the quartz wafer structure. With at least one side wall of each wafer functional groove and the side wall of the wafer strengthening groove in the side wall direction thereof jointly forming a two-stage stepped strength structure, it can provide protection and support for the functional wafer formed by the bottom surface platform of each wafer functional groove. At the same time, when preparing the ultra-thin quartz wafer structure, by considering the candidate set of quartz wafer sizes, the required quantity of quartz wafers, and the size data of each wafer, an optimization algorithm is used to optimize and solve the best deployment strategy of the wafers on the wafer when performing the quartz wafer preparation task. By deploying the wafers allocated to each type of quartz wafer and the wafer strengthening structure adopted for each wafer, while ensuring the preparation requirements of the quartz wafers, the overall strength structure of the prepared quartz wafers is improved as much as possible, avoiding problems such as breakage of the quartz wafers and low production qualification rate caused during subsequent processes and packaging. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 FIG. 6 is a schematic structural diagram of one structure of the ultra-thin quartz wafer structure according to an embodiment of the present invention; Figure 2 FIG. 9 is a schematic structural diagram of another structure of the ultra-thin quartz wafer structure according to an embodiment of the present invention; Figure 3 FIG. 12 is a schematic flowchart of a preparation method of the ultra-thin quartz wafer structure according to an embodiment of the present invention; Figure 4 FIG. 15 is a schematic diagram of arranging quartz wafers on a wafer according to an embodiment of the present invention.

[0018] The implementation, functional features, and advantages of the objectives of the present invention will be further described with reference to the embodiments and the accompanying drawings.

[0019] DESCRIPTION OF THE REFERENCE NUMERALS: 1 - Main body of the quartz wafer; 2 - Wafer strengthening groove; 3 - Wafer functional groove. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0020] In order to make the objectives, technical solutions, and advantages of the present invention clearer and more understandable, the present invention will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not used to limit the present invention.

[0021] An embodiment of the present invention provides an ultra-thin quartz wafer structure, including: The main body 1 of the quartz wafer, which is configured to have a first thickness value; At least one wafer strengthening groove 2 is provided on the quartz wafer body 1, and the bottom surface platform of the wafer strengthening groove 2 is configured to have a second thickness value; Wherein, at least one side wall of the wafer strengthening groove 2 and the quartz wafer body 1 form a wafer strengthening structure; A wafer functional groove 3 is provided on the bottom surface platform of each wafer strengthening groove 2, and the bottom surface platform of the wafer functional groove 3 is configured to have a third thickness value; Wherein, the bottom surface platform of each wafer functional groove 3 constitutes a functional wafer, and at least one side wall of each wafer functional groove 3 and at least one side wall of the wafer strengthening groove 2 in the side wall direction thereof jointly form a two-stage stepped strength structure.

[0022] In this embodiment, by providing at least one wafer strengthening groove 2 on the quartz wafer body 1 and providing a wafer functional groove 3 in each wafer strengthening groove 2, and forming a wafer strengthening structure with at least one side wall of the wafer strengthening groove 2 and the quartz wafer body 1, it is possible to provide different degrees of strength increase for the overall strength of the quartz wafer structure. With at least one side wall of each wafer functional groove 3 and the side wall of the wafer strengthening groove 2 in the side wall direction thereof jointly forming a two-stage stepped strength structure, it is possible to provide protection and support for the functional wafer constituted by the bottom surface platform of each wafer functional groove 3. Thus, by enhancing the strength of the wafer structure and the protection and support provided for the wafer, it is possible to avoid problems such as breakage of the quartz wafer and low production qualification rate caused during subsequent processes and packaging.

[0023] In a preferred embodiment, the first thickness value of the quartz wafer body 1 is configured to be the thickness value of a wafer. Further, the range of the first thickness value of the quartz wafer body 1 is 80um - 500um.

[0024] In a preferred embodiment, the range of the second thickness value of the bottom surface platform of the wafer strengthening groove 2 is 15um - 100um.

[0025] In a preferred embodiment, the range of the third thickness value of the bottom surface platform of the wafer functional groove 3 is 5um - 30um.

[0026] It should be noted that since the wafer strengthening groove 2 is provided on the quartz wafer body 1 and the wafer functional groove 3 is provided on the bottom surface platform of the wafer strengthening groove 2, in actual applications, it is necessary to ensure that the third thickness value is less than the second thickness value, and the second thickness value needs to be less than the first thickness value.

[0027] Exemplarily, such as Figure 1As shown, the four side walls of the wafer strengthening groove 2 are connected to the quartz wafer body 1, and the connection parts of the four side walls of the wafer strengthening groove 2 and the quartz wafer body 1 form an annular wafer strengthening structure surrounding the wafer strengthening groove 2.

[0028] In this embodiment, Figure 1 is a schematic structural diagram of the ultra-thin quartz wafer structure according to an embodiment of the present invention, which shows the setting of the annular wafer strengthening structure Exemplarily, such as Figure 2 As shown, one side wall of the wafer strengthening groove 2 is connected to the quartz wafer body 1, and the connection part of one side wall of the wafer strengthening groove 2 and the quartz wafer body 1 forms a unilateral wafer strengthening structure.

[0029] In this embodiment, Figure 2 is the second schematic structural diagram of the ultra-thin quartz wafer structure according to an embodiment of the present invention, which shows the unilateral wafer strengthening structure.

[0030] It should be noted that the wafer strengthening structure adopted by the present invention further includes a third wafer strengthening structure formed by connecting two side walls of the wafer strengthening groove 2 to the quartz wafer body 1 and a fourth wafer strengthening structure formed by connecting three side walls to the quartz wafer body 1. Among them, the above four wafer strengthening structures can provide different degrees of strength increase for the overall strength of the quartz wafer structure, but will also affect the volume of the ultra-thin quartz wafer structure manufactured, and thus affect the number of ultra-thin quartz wafer structures manufactured per wafer.

[0031] Referring to Figure 3 , Figure 3 is a schematic structural diagram of the indoor health preservation space layout planning system for the sub-healthy physiotherapy service place according to an embodiment of the present invention.

[0032] Such as Figure 3 As shown, in addition, in order to achieve the above object, the present invention also provides a method for preparing an ultra-thin quartz wafer structure for preparing the ultra-thin quartz wafer structure as described above, including the following steps: S1: Obtain the quartz wafer preparation requirement information within the target time period; wherein, the quartz wafer preparation requirement information includes the quartz wafer demand frequency and the quartz wafer demand quantity of each type of quartz wafer; S2: According to the quartz wafer demand frequency and the comparison table of candidate types of wafer strengthening structures with different frequencies, determine the type set of wafer strengthening structures for each type of quartz wafer, and generate a quartz wafer preparation task by using the candidate set of wafer strengthening structures for each type of quartz wafer and the quartz wafer demand quantity; Among them, the candidate set of wafer strengthening structures stores several types of wafer strengthening structures formed by different numbers of side walls of the wafer strengthening groove and the quartz wafer body; S3: Obtain the wafer resource information configured for this quartz wafer preparation task, and extract the size data of each wafer recorded in the wafer resource information; S4: Convert the candidate set of wafer enhancement structures for each type of quartz wafer in the quartz wafer preparation task into a candidate set of quartz wafer sizes. Based on the candidate set of quartz wafer sizes and the required quantity of each type of quartz wafer, considering the size data of each wafer, use an optimization algorithm to generate the best deployment strategy for wafers on the wafer when performing the quartz wafer preparation task, so that the prepared wafers have the highest overall strength under the existing wafer resources; S5: Generate a quartz wafer preparation instruction according to the wafers allocated to each type of quartz wafer recorded in the best deployment strategy and the wafer enhancement structure used for quartz wafer preparation on each wafer, and drive the corresponding quartz wafer preparation equipment to perform the corresponding quartz wafer preparation actions.

[0033] In this embodiment, when preparing the ultra-thin quartz wafer structure, by considering the candidate set of quartz wafer sizes and the required quantity of each type of quartz wafer as well as the size data of each wafer, use an optimization algorithm to optimize and solve the best deployment strategy for wafers on the wafer when performing the quartz wafer preparation task. By deploying the wafers allocated to each type of quartz wafer and the wafer enhancement structure used for each wafer, while ensuring the requirements for quartz wafer preparation, the overall strength structure of the prepared quartz wafers is improved as much as possible.

[0034] Furthermore, the step S4 specifically includes: S41: Convert the candidate set of wafer enhancement structures for each type of quartz wafer in the quartz wafer preparation task into a candidate set of quartz wafer sizes. Based on the candidate set of quartz wafer sizes and the required quantity of each type of quartz wafer, consider the size data of each wafer; S42: According to the number of connections between the quartz wafer body and the side wall of the wafer enhancement groove, divide each wafer enhancement structure in the candidate set of wafer enhancement structures into several strength levels. Taking the wafer enhancement structure used for quartz wafer preparation on the wafer allocated to each type of quartz wafer within the range of the candidate set of wafer enhancement structures corresponding to this type of quartz wafer as the first constraint condition, and taking the calculated preparable quantity of each type of quartz wafer not less than the required quantity of this type of quartz wafer according to the size data of each wafer and the quartz wafer size corresponding to the wafer enhancement structure used for quartz wafer preparation on this wafer after each type of quartz wafer is allocated to the corresponding wafer as the second constraint condition, and taking the highest sum of the strength levels corresponding to the wafer enhancement structures used for all quartz wafers as the optimization objective, optimize and solve the wafers allocated to each type of quartz wafer and the wafer enhancement structure used for each wafer; S43: Based on the wafers allocated to each quartz wafer and the wafer enhancement structure adopted for each wafer, construct the optimal deployment strategy of the wafers on the wafers when performing the quartz wafer preparation task.

[0035] In this embodiment, when solving the optimal deployment strategy, the quantity requirements and structural strength requirements of each type of quartz wafer are mainly considered. First, it is necessary to ensure that the structural strength of each type of quartz wafer during preparation is higher than the structural strength corresponding to the required frequency of the quartz wafer in the quartz wafer preparation requirement information (the higher the required frequency of the quartz wafer, the thinner the thickness, the higher the strength level of the wafer enhancement structure set, but the larger the size of each quartz wafer structure, and the fewer the number of such wafer structures that can be prepared on each wafer). Second, it is necessary to ensure that the quantity of each type of quartz wafer prepared by the existing provided wafers is higher than the quantity of the quartz wafer required in the quartz wafer preparation requirement (with the same quantity of wafer resources, if more wafer enhancement structures with high strength are prepared, then the preparation quantity will be less. As shown in Figure 4 the figure, one wafer can prepare multiple quartz wafers). Third, it is necessary to make the sum of the strength levels of all the prepared quartz wafers as high as possible (that is, to make the overall strength structure of the quartz wafers prepared according to the current quartz wafer preparation requirement as high as possible). Therefore, the present invention needs to balance the contradiction between the structural strength and quantity of the prepared wafers, so that under the current wafer resources, it can prepare a quantity that meets the requirements and the overall structural strength is as high as possible. Finally, according to the optimized solution of the wafers allocated to each type of quartz wafer and the wafer enhancement structure adopted for each wafer, drive the corresponding quartz wafer preparation equipment to perform the corresponding quartz wafer preparation actions.

[0036] In another embodiment, the present invention also provides a quartz resonator, including the ultra-thin quartz wafer structure described in any one of the above or an ultra-thin quartz wafer structure prepared by the ultra-thin quartz wafer structure preparation method described in any one of the above.

[0037] For other embodiments or specific implementation manners of the quartz resonator of the present invention, reference may be made to the above method embodiments, which will not be elaborated here.

[0038] It can be understood that in the description of this specification, the descriptions referring to terms such as "one embodiment", "another embodiment", "other embodiments", or "the first embodiment to the Nth embodiment", etc., mean that the specific features, structures, materials, or characteristics described in connection with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic descriptions of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials, or characteristics described can be combined in a suitable manner in any one or more embodiments or examples.

[0039] It should be noted that in this text, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or system including a series of elements not only includes those elements, but also includes other elements not explicitly listed, or further includes elements inherent to such process, method, article or system. Without further limitation, an element defined by the statement "including one..." does not exclude the existence of additional identical elements in the process, method, article or system including such element.

[0040] The above are only the preferred embodiments of the present invention, and do not limit the patent scope of the present invention accordingly. Any equivalent structure or equivalent process transformation made by using the content of the specification and drawings of the present invention, or directly or indirectly applied in other related technical fields, shall be equally included in the patent protection scope of the present invention.

Claims

1. An ultra-thin quartz wafer structure, characterized in that, Comprising: A quartz wafer body configured to have a first thickness value; At least one wafer reinforcement groove provided on the quartz wafer body, and a bottom surface platform of the wafer reinforcement groove is configured to have a second thickness value; Wherein, at least one side wall of the wafer reinforcement groove and the quartz wafer body form a wafer reinforcement structure; A wafer functional groove provided on the bottom surface platform of each wafer reinforcement groove, and a bottom surface platform of the wafer functional groove is configured to have a third thickness value; Wherein, the bottom surface platform of each wafer functional groove forms a functional wafer, and at least one side wall of each wafer functional groove and at least one side wall of the wafer reinforcement groove in the side wall direction thereof jointly form a two-stage stepped strength structure.

2. The ultra-thin quartz wafer structure according to claim 1, wherein The first thickness value of the quartz wafer body is configured to be the thickness value of a wafer.

3. The ultra-thin quartz wafer structure according to claim 2, wherein The range of the first thickness value of the quartz wafer body is 80um - 500um.

4. The ultra-thin quartz wafer structure according to claim 1, wherein, The range of the second thickness value of the bottom surface platform of the wafer reinforcement groove is 15um - 100um.

5. The ultra-thin quartz wafer structure according to claim 1, wherein The range of the third thickness value of the bottom surface platform of the wafer functional groove is 5um - 30um.

6. The ultra-thin quartz wafer structure according to claim 1, wherein Four side walls of the wafer reinforcement groove are connected to the quartz wafer body, and connection parts of the four side walls of the wafer reinforcement groove and the quartz wafer body form an annular wafer reinforcement structure surrounding the wafer reinforcement groove.

7. The ultra-thin quartz wafer structure according to claim 1, wherein One side wall of the wafer reinforcement groove is connected to the quartz wafer body, and a connection part of the one side wall of the wafer reinforcement groove and the quartz wafer body forms a unilateral wafer reinforcement structure.

8. A method for preparing an ultra-thin quartz wafer structure, characterized in that, A method for preparing the ultra-thin quartz wafer structure as described in any one of claims 1 - 7, comprising the following steps: S1: Obtain quartz wafer preparation requirement information within a target period; wherein, the quartz wafer preparation requirement information includes the quartz wafer demand frequency and the quartz wafer demand quantity of each type of quartz wafer; S2: According to the quartz wafer demand frequency and a comparison table of candidate types of wafer reinforcement structures with different frequencies, determine the set of wafer reinforcement structure types of each type of quartz wafer, and generate a quartz wafer preparation task by using the candidate set of wafer reinforcement structures of each type of quartz wafer and the quartz wafer demand quantity; Wherein, the candidate set of wafer reinforcement structures stores several types of wafer reinforcement structures formed by different numbers of side walls of the wafer reinforcement groove and the quartz wafer body; S3: Obtain wafer resource information configured for the quartz wafer preparation task, and extract the size data of each wafer recorded in the wafer resource information; S4: Convert the candidate set of wafer reinforcement structures of each type of quartz wafer in the quartz wafer preparation task into a candidate set of quartz wafer sizes, and based on the candidate set of quartz wafer sizes of each type of quartz wafer and the quartz wafer demand quantity, considering the size data of each wafer, use an optimization algorithm to generate an optimal deployment strategy of the wafers on the wafer when executing the quartz wafer preparation task, so that the prepared wafers have the highest overall strength under the existing wafer resources. S5: Generate a quartz wafer preparation instruction according to the wafers assigned to each type of quartz wafer recorded in the optimal deployment strategy and the wafer enhancement structure used for quartz wafer preparation on each wafer, and drive the corresponding quartz wafer preparation equipment to perform the corresponding quartz wafer preparation actions.

9. The method for preparing the ultra-thin quartz wafer structure according to claim 8, wherein, The specific steps of step S4 include: S41: Convert the candidate set of wafer enhancement structures for each type of quartz wafer in the quartz wafer preparation task into a candidate set of quartz wafer sizes. Based on the candidate set of quartz wafer sizes and the required quantity of quartz wafers for each type of quartz wafer, consider the size data of each wafer; S42: Divide each type of wafer enhancement structure in the candidate set of wafer enhancement structures into several strength levels according to the number of connections between the quartz wafer body and the side wall of the wafer enhancement groove. Using the wafer enhancement structure used for quartz wafer preparation on the wafers assigned to each type of quartz wafer within the range of the candidate set of wafer enhancement structures corresponding to this type of quartz wafer as the first constraint condition, and after each type of quartz wafer is assigned to the corresponding wafer, calculate the number of quartz wafers that can be prepared for each type of quartz wafer based on the size data of each wafer and the quartz wafer size corresponding to the wafer enhancement structure used for quartz wafer preparation on this wafer, and use the condition that the calculated number of quartz wafers that can be prepared for each type of quartz wafer is not less than the required quantity of quartz wafers for this type of quartz wafer as the second constraint condition. With the highest sum of the strength levels corresponding to the wafer enhancement structures used for all quartz wafers as the optimization objective, optimize and solve the wafers assigned to each type of quartz wafer and the wafer enhancement structure used for each wafer; S43: Construct an optimal deployment strategy for the wafers on the wafers when performing the quartz wafer preparation task according to the wafers assigned to each type of quartz wafer and the wafer enhancement structure used for each wafer.

10. A quartz resonator, characterized in that, Including the ultra-thin quartz wafer structure described in any one of claims 1-8 above or the ultra-thin quartz wafer structure prepared by the method for preparing the ultra-thin quartz wafer structure described in any one of claims 8-9 above.

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