Semiconductor module

Abstract

The semiconductor module may include: a heat dissipation member; a semiconductor device joined to the heat dissipation member; and a cover layer that covers a part of the heat dissipation member and is an insulator. The semiconductor device may be provided with: a base material which is positioned on one side of the heat dissipation member in the first direction and which is bonded to the heat dissipation member; a first conductive layer; a semiconductor element (first element); a sealing resin; and a first power terminal that is electrically connected to the first conductive layer and the semiconductor element, and that includes a portion protruding outward from the sealing resin in a direction orthogonal to the first direction. The cover layer may be positioned on the one side of the heat dissipation member in the first direction. When viewed in the first direction, the first power terminal may overlap the heat dissipation member and the cover layer, respectively.

Description

Technical Field

[0001] The present disclosure relates to a semiconductor module including a heat dissipation component and a semiconductor device. Background Art

[0002] An example of a semiconductor device including a heat dissipation component is disclosed in Patent Document 1. The heat dissipation component includes a housing having a hollow region and a radiator. An opening communicating with the hollow region is provided in the housing. The radiator is attached to the housing so as to block the opening. A part of the radiator is housed in the hollow region. The semiconductor device is joined to a part of the radiator that protrudes from the hollow region to the outside via a joining material. When a refrigerant (such as cooling water) flows in the hollow region, the refrigerant contacts the radiator. Thus, the semiconductor device can be cooled via the radiator.

[0003] The semiconductor device including a heat dissipation component disclosed in Patent Document 1 includes a P terminal, an O terminal, and an N terminal each including a part protruding from a sealing resin to the outside. DC power is supplied to the P terminal and the N terminal from the outside. AC power converted from the DC power by the semiconductor device is output from the O terminal. The creepage distances from the P terminal, the O terminal, and the N terminal to the radiator can be made relatively short. Therefore, the withstand voltage of the semiconductor device may be reduced due to the radiator.

[0004] Prior Art Documents

[0005] Patent Documents

[0006] Patent Document 1: International Publication No. 2017 / 094370 Summary of the Invention

[0007] Problems to be Solved by the Invention

[0008] One problem of the present disclosure is to provide a semiconductor module that has been improved compared with the prior art. In particular, in view of the above situation, one problem of the present disclosure is to provide a semiconductor module that can improve the cooling efficiency of a semiconductor device and suppress a decrease in the withstand voltage of the semiconductor device.

[0009] Means for Solving the Problems

[0010] A semiconductor module provided by one aspect of the present disclosure includes: a heat dissipation component; a semiconductor device bonded to the heat dissipation component; and a covering layer that covers a part of the heat dissipation component and is an insulator. The semiconductor device includes: a substrate located on one side in a first direction of the heat dissipation component and bonded to the heat dissipation component; a conductive layer located on the side opposite to the heat dissipation component with respect to the substrate and bonded to the substrate; a semiconductor element bonded to the conductive layer; a sealing resin that covers the conductive layer and the semiconductor element; and a power terminal that is electrically connected to the conductive layer and the semiconductor element and includes a portion that protrudes outward from the sealing resin in a direction orthogonal to the first direction. The covering layer is located on the one side in the first direction of the heat dissipation component. When observed in the first direction, the power terminal overlaps with the heat dissipation component and the covering layer, respectively.

[0011] Advantages of the Invention

[0012] According to the above structure, it is possible to improve the cooling efficiency of the semiconductor device and suppress a decrease in the breakdown voltage of the semiconductor device.

[0013] Other features and advantages of the present disclosure will become more apparent from the following detailed description based on the accompanying drawings. Description of the Drawings

[0014] Figure 1 is a perspective view of a semiconductor module according to a first embodiment of the present disclosure.

[0015] Figure 2 is Figure 1 a top view of the semiconductor module shown.

[0016] Figure 3 is Figure 1 a right side view of the semiconductor module shown.

[0017] Figure 4 is a cross-sectional view taken along line IV-IV of Figure 2 .

[0018] Figure 5 is a cross-sectional view taken along line V-V of Figure 2 .

[0019] Figure 6 is Figure 4 a partial enlarged view of

[0020] Figure 7 is Figure 5 a partial enlarged view of

[0021] Figure 8 is Figure 1Top view of the semiconductor device included in the semiconductor module shown.

[0022] Figure 9 It is Figure 8 The corresponding top view, with the sealing resin being transparent.

[0023] Figure 10 It is Figure 9 The partial enlarged view.

[0024] Figure 11 It is Figure 8 The corresponding top view, with the first conduction component being transparent and the illustration of the sealing resin and the second conduction component being omitted.

[0025] Figure 12 It is Figure 8 The right side view of the semiconductor device shown.

[0026] Figure 13 It is Figure 8 The bottom view of the semiconductor device shown.

[0027] Figure 14 It is the cross-sectional view along the Figure 9 XIV-XIV line.

[0028] Figure 15 It is the cross-sectional view along the Figure 9 XV-XV line.

[0029] Figure 16 It is Figure 15 The partial enlarged view of the first element shown and its periphery.

[0030] Figure 17 It is Figure 15 The partial enlarged view of the second element shown and its periphery.

[0031] Figure 18 It is the cross-sectional view along the Figure 9 XVIII-XVIII line.

[0032] Figure 19 It is the cross-sectional view along the Figure 9 XIX-XIX line.

[0033] Figure 20 It is the top view of the semiconductor module according to the second embodiment of the present disclosure.

[0034] Figure 21 It is the cross-sectional view along the Figure 20 XXI-XXI line.

[0035] Figure 22 It is the cross-sectional view along the Figure 20 XXII-XXII line.

[0036] Figure 23 is Figure 21 a partially enlarged view of

[0037] Figure 24 is a top view of the semiconductor module according to the third embodiment of the present disclosure.

[0038] Figure 25 is a cross-sectional view taken along the Figure 24 line XXV-XXV of

[0039] Figure 26 is a cross-sectional view taken along the Figure 24 line XXVI-XXVI of

[0040] Figure 27 is Figure 25 a partially enlarged view of

[0041] Figure 28 is a top view of the semiconductor module according to the fourth embodiment of the present disclosure.

[0042] Figure 29 is a cross-sectional view taken along the Figure 28 line XXIX-XXIX of

[0043] Figure 30 is a top view of the semiconductor module according to the fifth embodiment of the present disclosure.

[0044] Figure 31 is a cross-sectional view taken along the Figure 30 line XXXI-XXXI of

[0045] Figure 32 is a cross-sectional view taken along the Figure 30 line XXXII-XXXII of Detailed Embodiments

[0046] Embodiments for implementing the present disclosure will be described based on the accompanying drawings.

[0047] First Embodiment:

[0048] Based on Figures 1 to 19 the semiconductor module A10 according to the first embodiment of the present disclosure will be described. The semiconductor module A10 may include a semiconductor device B, a bonding layer 71, a covering layer 72, a housing 73, and a heat dissipation member 80.

[0049] In the description of the semiconductor module A10, for convenience, the normal direction of the first main surface 121A of the first conductive layer 121 of the semiconductor device B described later is referred to as the "first direction z". The direction orthogonal to the first direction z is referred to as the "second direction x". The direction orthogonal to the first direction z and the second direction x is referred to as the "third direction y".

[0050] First, based on Figure 1 and Figures 8 to 19 , the semiconductor device B included in the semiconductor module A10 will be described. The semiconductor device B may include a base material 11, a first conductive layer 121, a second conductive layer 122, a first power terminal 13, a second power terminal 14, a third power terminal 15, a first signal terminal 161, a second signal terminal 162, a plurality of semiconductor elements 21, a first conduction member 31, a second conduction member 32, and a sealing resin 50. The semiconductor device B may further include a third signal terminal 171, a fourth signal terminal 172, a pair of fifth signal terminals 181, a pair of sixth signal terminals 182, a seventh signal terminal 19, a pair of thermistors 22, and a pair of control wirings 60. Here, in Figure 9 and Figure 10 , for easy understanding, the sealing resin 50 is seen through. In Figure 9 , the seen-through sealing resin 50 is represented by a phantom line (double-dot dash line). In Figure 11 , for easy understanding, the first conduction member 31 is seen through, and the illustration of the second conduction member 32 and the sealing resin 50 is omitted. In Figure 11 , the seen-through first conduction member 31 is represented by a phantom line. And, in Figure 9 , the XV-XV line is represented by a single-dot dash line.

[0051] The semiconductor device B may be configured to convert the DC power supply voltage applied to the first power terminal 13 and the third power terminal 15 into AC power by the plurality of semiconductor elements 21. The converted AC power may be input from the second power terminal 14 to a power supply object such as a motor.

[0052] As Figures 15 to 17 shows, the base material 11 may be located on the side opposite to the plurality of semiconductor elements 21 with the first conductive layer 121 and the second conductive layer 12 interposed therebetween in the first direction z. The base material 11 may support the first conductive layer 121 and the second conductive layer 122. In the semiconductor device B, the base material 11 may be composed of a DBC (Direct Bonded Copper) substrate. As Figures 15 to 17 shows, the base material 11 may include an insulating layer 111, a pair of metal layers 112, and a heat dissipation layer 113. The base material 11 may be covered with the sealing resin 50 except for a part of the heat dissipation layer 113.

[0053] As Figures 15 to 17 shown, the insulating layer 111 may include a portion interposed between the metal layer 112 and the heat dissipation layer 113 in the first direction z. The insulating layer 111 may be a material with relatively high thermal conductivity. For example, the insulating layer 111 may be a ceramic including a sintered body of aluminum nitride (AlN). In addition to ceramics, the insulating layer 111 may also adopt a structure such as an insulating resin sheet. The thickness of the insulating layer 111 may be thinner than the thickness of each of the first conductive layer 121 and the second conductive layer 122.

[0054] As Figures 15 to 17 shown, a pair of metal layers 112 may be located between the insulating layer 111 and the first conductive layer 121 and the second conductive layer 122 in the first direction z. The composition of the pair of metal layers 112 may include copper (Cu). As Figure 11 shown, when observed in the first direction z, each of the pair of metal layers 112 may be surrounded by the peripheral edge of the insulating layer 111.

[0055] As Figures 15 to 17 shown, the heat dissipation layer 113 may be located on the side opposite to the metal layer 112 with the insulating layer 111 interposed therebetween in the first direction z. As Figure 13 shown, the heat dissipation layer 113 may be exposed from the sealing resin 50. The composition of the heat dissipation layer 113 may include copper. The thickness of the heat dissipation layer 113 may be greater than the thickness of the insulating layer 111. When observed in the first direction z, the heat dissipation layer 113 may be surrounded by the peripheral edge of the insulating layer 111.

[0056] As Figures 15 to 17 shown, the first conductive layer 121 and the second conductive layer 122 may be joined to the substrate 11. The composition of the first conductive layer 121 and the second conductive layer 122 may include copper. The first conductive layer 121 and the second conductive layer 122 may be separated from each other in the second direction x. As Figure 14 and Figure 15 shown, the first conductive layer 121 may have a first main surface 121A facing the first direction z. The first main surface 121A faces a plurality of semiconductor elements 21. As Figure 16 shown, it may be joined to one of the pair of metal layers 112 via the first conductive layer 121 and the bonding layer 123. The bonding layer 123 may be, for example, a solder including silver (Ag) in its composition. As Figure 14 and Figure 15 shown, the second conductive layer 122 may have a second main surface 122A facing the first direction z. The second main surface 122A may face the same side as the first main surface 121A in the first direction z. As Figure 17As shown, the second conductive layer 122 can be joined to the other metal layer 112 of the pair of metal layers 112 via the joining layer 123. The dimensions of the first conductive layer 121 and the second conductive layer 122 in the first direction z can be larger than the dimensions of the substrate 11 in the first direction z.

[0057] As Figure 11 and Figure 15 shown, a plurality of semiconductor elements 21 can be mounted on either the first conductive layer 121 or the second conductive layer 122, respectively. The plurality of semiconductor elements 21 can be, for example, MOSFETs (Metal - Oxide - Semiconductor Field - Effect Transistors). In addition, the plurality of semiconductor elements 21 can be switching elements such as IGBTs (Insulated Gate Bipolar Transistors), diodes, etc. In the description of the semiconductor device B, the semiconductor element 21 can be an n - channel and vertical - structure MOSFET. The plurality of semiconductor elements 21 can include a compound semiconductor substrate. The composition of the compound semiconductor substrate can include silicon carbide (SiC).

[0058] As Figure 11 shown, in the semiconductor device B, the plurality of semiconductor elements 21 can include a plurality of first elements 21A and a plurality of second elements 21B. The structures of the plurality of second elements 21B can be the same as the structures of the plurality of first elements 21A, respectively. The plurality of first elements 21A can be mounted on the first main surface 121A of the first conductive layer 121. The plurality of first elements 21A can be arranged along the third direction y. The plurality of second elements 21B can be mounted on the second main surface 122A of the second conductive layer 122. The plurality of second elements 21B can be arranged along the third direction y.

[0059] As Figure 11 , Figure 16 and Figure 17 shown, the plurality of semiconductor elements 21 can each have a first electrode 211, a second electrode 212, a third electrode 213, and a fourth electrode 214.

[0060] As Figure 16 and Figure 17 shown, the first electrode 211 can be opposed to either the first conductive layer 121 or the second conductive layer 122. A current corresponding to the power before being converted by the semiconductor element 21 can flow through the first electrode 211. That is, the first electrode 211 can correspond to the drain electrode of the semiconductor element 21.

[0061] As Figure 16 and Figure 17As shown, the second electrode 212 may be located on the opposite side of the first electrode 211 in the first direction z. A current corresponding to the power converted by the semiconductor element 21 may flow through the second electrode 212. That is, the second electrode 212 may correspond to the source electrode of the semiconductor element 21.

[0062] As Figure 16 and Figure 17 shown, the third electrode 213 may be located on the same side of the second electrode 212 in the first direction z. A gate voltage for driving the semiconductor element 21 may be applied to the third electrode 213. That is, the third electrode 213 may correspond to the gate electrode of the semiconductor element 21. As Figure 11 shown, when observed in the first direction z, the area of the third electrode 213 may be smaller than the area of the second electrode 212.

[0063] As Figure 11 shown, the fourth electrode 214 may be located on the same side of the second electrode 212 in the first direction z and beside the third electrode 213 in the third direction y. The potential of the fourth electrode 214 may be equal to the potential of the second electrode 212.

[0064] As Figure 16 and Figure 17 shown, the conductive bonding layer 23 may be interposed between any one of the first conductive layer 121 and the second conductive layer 122 and the first electrode 211 of any one of the plurality of semiconductor elements 21. The conductive bonding layer 23 may be, for example, solder. In addition, the conductive bonding layer 23 may adopt a structure including a sintered body of metal particles. The first electrodes 211 of the plurality of first elements 21A may be conductively bonded to the first main surface 121A of the first conductive layer 121 via the conductive bonding layer 23. Thereby, the first electrodes 211 of the plurality of first elements 21A may be electrically connected to the first conductive layer 121. The first electrodes 211 of the plurality of second elements 21B may be conductively bonded to the second main surface 122A of the second conductive layer 122 via the conductive bonding layer 23. Thereby, the first electrodes 211 of the plurality of second elements 21B may be electrically connected to the second conductive layer 122.

[0065] As Figure 9 and Figure 15As shown, the first power terminal 13 can be located on the side opposite to the second conductive layer 122 with the first conductive layer 121 interposed therebetween in the second direction x, and is connected to the first conductive layer 121. Thus, the first power terminal 13 can be electrically connected to the first electrodes 211 of the plurality of first elements 21A via the first conductive layer 121. The first power terminal 13 can be a P terminal (positive electrode) to which a DC power supply voltage to be converted into electric power is applied. The first power terminal 13 can extend from the first conductive layer 121 in the second direction x. The first power terminal 13 can have a covering portion 13A and an exposed portion 13B. As Figure 15 shown, the covering portion 13A can be connected to the first conductive layer 121 and covered with the sealing resin 50. The covering portion 13A can be flush with the first main surface 121A of the first conductive layer 121. The exposed portion 13B can extend from the covering portion 13A in the second direction x and be exposed from the sealing resin 50.

[0066] As Figure 9 and Figure 14 shown, the second power terminal 14 can be located on the side opposite to the first conductive layer 121 with the second conductive layer 122 interposed therebetween in the second direction x, and is connected to the second conductive layer 122. Thus, the second power terminal 14 can be electrically connected to the first electrodes 211 of the plurality of second elements 21B via the second conductive layer 122. The AC power converted by the plurality of semiconductor elements 21 can be output from the second power terminal 14. In the semiconductor device B, the second power terminal 14 can include a pair of regions separated from each other in the third direction y. In addition, the second power terminal 14 can adopt a single structure that does not include the pair of regions. The second power terminal 14 can have a covering portion 14A and an exposed portion 14B. As Figure 14 shown, the covering portion 14A can be connected to the second conductive layer 122 and covered with the sealing resin 50. The covering portion 14A can be flush with the second main surface 122A of the second conductive layer 122. The exposed portion 14B can extend from the covering portion 14A in the second direction x and be exposed from the sealing resin 50.

[0067] As Figure 9 and Figure 14As shown, the third power terminal 15 can be located on the same side as the first power terminal 13 with respect to the first conductive layer 121 and the second conductive layer 122 in the second direction x, and separated from the first conductive layer 121 and the second conductive layer 122. The third power terminal 15 can be electrically connected to the second electrodes 212 of a plurality of second elements 21B. The third power terminal 15 can be an N terminal (negative electrode) to which a DC power supply voltage to be converted into electric power is applied. The third power terminal 15 can include a pair of regions separated from each other in the third direction y. The first power terminal 13 can be located between the pair of regions in the third direction y. The third power terminal 15 can have a covering portion 15A and an exposed portion 15B. As Figure 14 shown, the covering portion 15A can be away from the first conductive layer 121 and covered by the sealing resin 50. The exposed portion 15B can extend from the covering portion 15A in the second direction x and be exposed from the sealing resin 50.

[0068] A pair of control wirings 60 can form a part of the conduction paths of the first signal terminal 161, the second signal terminal 162, the third signal terminal 171, the fourth signal terminal 172, a pair of fifth signal terminals 181, a pair of sixth signal terminals 182, and a plurality of semiconductor elements 21. As Figures 9 to 11 shown, the pair of control wirings 60 can include a first wiring 601 and a second wiring 602. In the second direction x, the first wiring 601 can be located between a plurality of first elements 21A and the first power terminal 13 and the third power terminal 15. The first wiring 601 can be joined to the first main surface 121A of the first conductive layer 121. The first wiring 601 can also form a part of the conduction path between the seventh signal terminal 19 and the first conductive layer 121. In the second direction x, the second wiring 602 can be located between a plurality of second elements 21B and the second power terminal 14. The second wiring 602 can be joined to the second main surface 122A of the second conductive layer 122. As Figure 16 and Figure 17 shown, the pair of control wirings 60 can have an insulating layer 61, a plurality of wiring layers 62, a metal layer 63, and a plurality of sleeves 64. The pair of control wirings 60 can be covered by the sealing resin 50 except for a part of each of the plurality of sleeves 64.

[0069] As Figure 16 and Figure 17 shown, the insulating layer 61 can include a part interposed between the plurality of wiring layers 62 and the metal layer 63 in the first direction z. The insulating layer 61 can be, for example, ceramics. In addition to ceramics, the insulating layer 61 can also adopt a structure such as an insulating resin sheet.

[0070] As Figure 16 and Figure 17As shown, a plurality of wiring layers 62 may be located on one side in the first direction z of the insulating layer 61. The composition of the plurality of wiring layers 62 may include copper. As Figure 11 shown, the plurality of wiring layers 62 may include a first wiring layer 621, a second wiring layer 622, a pair of third wiring layers 623, a fourth wiring layer 624, and a fifth wiring layer 625. The pair of third wiring layers 623 may be adjacent to each other in the third direction y.

[0071] As Figure 16 and Figure 17 shown, the metal layer 63 may be located on the side opposite to the plurality of wiring layers 62 with the insulating layer 61 interposed therebetween in the first direction z. The composition of the metal layer 63 may include copper. The metal layer 63 of the first wiring 601 may be joined to the first main surface 121A of the first conductive layer 121 through the first adhesive layer 68. The metal layer 63 of the second wiring 602 may be joined to the second main surface 122A of the second conductive layer 122 through the first adhesive layer 68. The first adhesive layer 68 may be a material with or without conductivity. The first adhesive layer 68 may be solder, for example.

[0072] As Figure 16 and Figure 17 shown, the plurality of sleeves 64 may be joined to any one of the plurality of wiring layers 62 through the second adhesive layer 69 respectively. The plurality of sleeves 64 may be a conductive material such as metal. The plurality of sleeves 64 may be tubular shapes extending along the first direction z respectively. One end of the plurality of sleeves 64 may be conductively joined to any one of the plurality of wiring layers 62. As Figure 8 and Figure 15 shown, the end surfaces 641 corresponding to the other ends of the plurality of sleeves 64 may be exposed from the top surface 51 of the sealing resin 50 described later. The second adhesive layer 69 may have conductivity. The second adhesive layer 69 may be solder, for example.

[0073] As Figure 10 shown, one of the pair of thermistors 22 may be conductively joined to the pair of third wiring layers 623 of the first wiring 601. Figure 10 shown, the other thermistor 22 of the pair of thermistors 22 may be conductively joined to the pair of third wiring layers 623 of the second wiring 602. The pair of thermistors 22 may be NTC (Negative Temperature Coefficient) thermistors, for example. The NTC thermistor may have the characteristic that the resistance decreases slowly with the increase in temperature. The pair of thermistors 22 may be used as a temperature detection sensor for the semiconductor device B.

[0074] As Figure 1As shown, the first signal terminal 161, the second signal terminal 162, the third signal terminal 171, the fourth signal terminal 172, a pair of fifth signal terminals 181, a pair of sixth signal terminals 182, and the seventh signal terminal 19 can each be a metal pin extending in the first direction z. These terminals can protrude from the top surface 51 of the sealing resin 50 described later. Also, these terminals can be individually press-fitted into the plurality of sleeves 64 of the pair of control wirings 60. As a result, these terminals can each be supported by any one of the plurality of sleeves 64 and conduct with any one of the plurality of wiring layers 62.

[0075] As Figure 11 and Figure 16 shown, the first signal terminal 161 can be press-fitted into the sleeve 64 that engages with the first wiring layer 621 of the first wiring 601 among the plurality of sleeves 64 of the pair of control wirings 60. As a result, the first signal terminal 161 is supported by the sleeve 64 and can conduct with the first wiring layer 621 of the first wiring 601. Further, the first signal terminal 161 can conduct with the third electrodes 213 of the plurality of first elements 21A. A gate voltage for driving the plurality of first elements 21A can be applied to the first signal terminal 161.

[0076] As Figure 11 and Figure 17 shown, the second signal terminal 162 can be press-fitted into the sleeve 64 that engages with the first wiring layer 621 of the second wiring 602 among the plurality of sleeves 64 of the pair of control wirings 60. As a result, the second signal terminal 162 is supported by the sleeve 64 and can conduct with the first wiring layer 621 of the second wiring 602. Further, the second signal terminal 162 can conduct with the third electrodes 213 of the plurality of second elements 21B. A gate voltage for driving the plurality of second elements 21B can be applied to the second signal terminal 162.

[0077] As Figure 8 shown, the third signal terminal 171 can be located beside the first signal terminal 161 in the third direction y. As Figure 11 shown, the third signal terminal 171 can be press-fitted into the sleeve 64 that engages with the second wiring layer 622 of the first wiring 601 among the plurality of sleeves 64 of the pair of control wirings 60. As a result, the third signal terminal 171 is supported by the sleeve 64 and can conduct with the second wiring layer 622 of the first wiring 601. Further, the third signal terminal 171 can conduct with the fourth electrodes 214 of the plurality of first elements 21A. A voltage corresponding to the maximum current among the currents flowing through the fourth electrodes 214 of each of the plurality of first elements 21A can be applied to the third signal terminal 171.

[0078] As Figure 8As shown, the fourth signal terminal 172 can be located beside the second signal terminal 162 in the third direction y. As Figure 11 shown, the fourth signal terminal 172 can be pressed into the sleeve 64 that engages with the second wiring layer 622 of the second wiring 602 among the plurality of sleeves 64 of a pair of control wirings 60. Thus, the fourth signal terminal 172 is supported by the sleeve 64 and can be electrically connected to the second wiring layer 622 of the second wiring 602. Moreover, the fourth signal terminal 172 can be electrically connected to the fourth electrodes 214 of the plurality of second elements 21B. A voltage corresponding to the maximum current among the currents flowing through the fourth electrodes 214 of each of the plurality of second elements 21B can be applied to the fourth signal terminal 172.

[0079] As Figure 8 shown, a pair of fifth signal terminals 181 can be located on the opposite side of the third signal terminal 171 with the first signal terminal 161 interposed therebetween in the third direction y. The pair of fifth signal terminals 181 can be adjacent to each other in the third direction y. As Figure 11 shown, the pair of fifth signal terminals 181 can be individually pressed into a pair of sleeves 64 that engage with a pair of third wiring layers 623 of the first wiring 601 among the plurality of sleeves 64 of a pair of control wirings 60. Thus, the pair of fifth signal terminals 181 is supported by the pair of sleeves 64 and can be electrically connected to the pair of third wiring layers 623 of the first wiring 601. Moreover, the pair of fifth signal terminals 181 can be electrically connected to the pair of thermistors 22 that are electrically connected to the pair of third wiring layers 623 of the first wiring 601.

[0080] As Figure 8 shown, a pair of sixth signal terminals 182 can be located on the opposite side of the fourth signal terminal 172 with the second signal terminal 162 interposed therebetween in the third direction y. The pair of sixth signal terminals 182 can be adjacent to each other in the third direction y. As Figure 11 shown, the pair of sixth signal terminals 182 can be individually pressed into a pair of sleeves 64 that engage with a pair of third wiring layers 623 of the second wiring 602 among the plurality of sleeves 64 of a pair of control wirings 60. Thus, the pair of sixth signal terminals 182 is supported by the pair of sleeves 64 and can be electrically connected to the pair of third wiring layers 623 of the second wiring 602. Moreover, the pair of sixth signal terminals 182 can be electrically connected to the pair of thermistors 22 that are electrically connected to the pair of third wiring layers 623 of the second wiring 602.

[0081] As Figure 8 shown, the seventh signal terminal 19 can be located on the opposite side of the first signal terminal 161 with the third signal terminal 171 interposed therebetween in the third direction y. As Figure 11As shown, the seventh signal terminal 19 can be pressed into the sleeve 64 that engages with the fifth wiring layer 625 of the first wiring 601 among the multiple sleeves 64 of a pair of control wirings 60. Thus, the seventh signal terminal 19 is supported by the sleeve 64 and can be electrically connected to the fifth wiring layer 625 of the first wiring 601. Moreover, the seventh signal terminal 19 can be electrically connected to the first conductive layer 121. A voltage equivalent to the DC power input to the first power terminal 13 and the third power terminal 15 can be applied to the seventh signal terminal 19.

[0082] As Figure 11 shown, multiple first wires 41 can be electrically connected to the third electrodes 213 of multiple first elements 21A and the fourth wiring layer 624 of the first wiring 601. As Figure 11 shown, multiple third wires 43 can be electrically connected to the fourth wiring layer 624 of the first wiring 601 and the first wiring layer 621 of the first wiring 601. Thus, the first signal terminal 161 can be electrically connected to the third electrodes 213 of multiple first elements 21A. The composition of multiple first wires 41 and multiple third wires 43 can include gold (Au). In addition, the composition of multiple first wires 41 and multiple third wires 43 can be set to include copper or include aluminum (Al).

[0083] Moreover, as Figure 11 shown, multiple first wires 41 can be electrically connected to the third electrodes 213 of multiple second elements 21B and the fourth wiring layer 624 of the second wiring 602. In addition, as Figure 11 shown, the third wire 43 can be electrically connected to the fourth wiring layer 624 of the second wiring 602 and the first wiring layer 621 of the second wiring 602. Thus, the second signal terminal 162 can be electrically connected to the third electrodes 213 of multiple second elements 21B.

[0084] As Figure 11 shown, multiple second wires 42 can be electrically connected to the fourth electrodes 214 of multiple first elements 21A and the second wiring layer 622 of the first wiring 601. Thus, the third signal terminal 171 can be electrically connected to the fourth electrodes 214 of multiple first elements 21A. Moreover, as Figure 11 shown, multiple second wires 42 can be electrically connected to the fourth electrodes 214 of multiple second elements 21B and the second wiring layer 622 of the second wiring 602. Thus, the fourth signal terminal 172 can be electrically connected to the fourth electrodes 214 of multiple second elements 21B. The composition of multiple second wires 42 can include gold. In addition, the composition of multiple second wires 42 can be set to include copper or include aluminum.

[0085] As Figure 11As shown, the fourth wire 44 can be conductively joined to the fifth wiring layer 625 of the first wiring 601 and the first main surface 121A of the first conductive layer 121. Thus, the seventh signal terminal 19 can be electrically connected to the first conductive layer 121. The composition of the fourth wire 44 can include gold. In addition, the composition of the fourth wire 44 can be set to include copper or aluminum.

[0086] As Figure 11 and Figure 16 shown, the first conduction member 31 can be conductively joined to the second electrodes 212 of the plurality of first elements 21A and the second main surface 122A of the second conductive layer 122. Thus, the second electrodes 212 of the plurality of first elements 21A can be electrically connected to the second conductive layer 122. The composition of the first conduction member 31 can include copper. The first conduction member 31 can be a metal clip. As Figure 11 shown, the first conduction member 31 can have a main body portion 311, a plurality of first joining portions 312, a plurality of first connecting portions 313, a second joining portion 314, and a second connecting portion 315.

[0087] The main body portion 311 can constitute the main part of the first conduction member 31. As Figure 11 shown, the main body portion 311 can extend along the third direction y. As Figure 15 shown, the main body portion 311 can span between the first conductive layer 121 and the second conductive layer 122.

[0088] As Figure 16 shown, the plurality of first joining portions 312 can be individually joined to the second electrodes 212 of the plurality of first elements 21A. The plurality of first joining portions 312 can face the second electrodes 212 of any one of the plurality of first elements 21A, respectively.

[0089] As Figure 11 shown, the plurality of first connecting portions 313 can connect the main body portion 311 and the plurality of first joining portions 312. The plurality of first connecting portions 313 can be separated from each other in the third direction y. As Figure 15 shown, when viewed in the third direction y, the plurality of first connecting portions 313 can be inclined in a direction away from the first main surface 121A of the first conductive layer 121 as they extend from the plurality of first joining portions 312 toward the main body portion 311.

[0090] As Figure 11 and Figure 15 shown, the second joining portion 314 can be joined to the second main surface 122A of the second conductive layer 122. The second joining portion 314 can face the second main surface 122A. The second joining portion 314 can extend along the third direction y. The dimension of the second joining portion 314 in the third direction y can be equal to the dimension of the main body portion 311 in the third direction y.

[0091] As Figure 11 and Figure 15 shown, the second connecting portion 315 can be connected to the main body portion 311 and the second joint portion 314. When observed in the third direction y, the second connecting portion 315 can be inclined in a direction away from the second main surface 122A of the second conductive layer 122 as it goes from the second joint portion 314 toward the main body portion 311. The dimension of the second connecting portion 315 in the third direction y can be equal to the dimension of the main body portion 311 in the third direction y.

[0092] As Figure 15 , Figure 16 and Figure 19 shown, the semiconductor device B may further include a first conductive joint layer 33. The first conductive joint layer 33 can be interposed between the second electrodes 212 of the plurality of first elements 21A and the plurality of first joint portions 312. The first conductive joint layer 33 can conductively join the second electrodes 212 of the plurality of first elements 21A and the plurality of first joint portions 312. The first conductive joint layer 33 can be, for example, solder. In addition, the first conductive joint layer 33 can include a sintered body of metal particles.

[0093] As Figure 15 shown, the semiconductor device B may further include a second conductive joint layer 34. The second conductive joint layer 34 can be interposed between the second main surface 122A of the second conductive layer 122 and the second joint portion 314. The second conductive joint layer 34 can conductively join the second main surface 122A and the second joint portion 314. The second conductive joint layer 34 can be, for example, solder. In addition, the second conductive joint layer 34 can include a sintered body of metal particles.

[0094] As Figure 10 and Figure 17 shown, the second conduction member 32 can be conductively joined to the second electrodes 212 of the plurality of second elements 21B and the covering portion 15A of the third power terminal 15. Thereby, the second electrodes 212 of the plurality of second elements 21B can be conducted to the third power terminal 15. The composition of the second conduction member 32 can contain copper. The second conduction member 32 can be a metal clip. As Figure 10 shown, the second conduction member 32 can have a pair of main body portions 321, a plurality of third joint portions 322, a plurality of third connecting portions 323, a pair of fourth joint portions 324, a pair of fourth connecting portions 325, a plurality of intermediate portions 326, and a plurality of cross beam portions 327.

[0095] As Figure 10 shown, the pair of main body portions 321 can be separated from each other in the third direction y. The pair of main body portions 321 can extend along the second direction x. As Figure 14As shown, a pair of main body portions 321 can be arranged parallel to the first main surface 121A of the first conductive layer 121 and the second main surface 122A of the second conductive layer 122. The pair of main body portions 321 can be farther from the first main surface 121A and the second main surface 122A than the main body portion 311 of the first conduction member 31.

[0096] As Figure 10 shown, a plurality of intermediate portions 326 can be separated from each other in the third direction y and located between the pair of main body portions 321 in the third direction y. The plurality of intermediate portions 326 can extend along the second direction x. The size of each of the plurality of intermediate portions 326 in the second direction x can be smaller than the size of each of the pair of main body portions 321 in the second direction x.

[0097] As Figure 17 shown, a plurality of third bonding portions 322 can be individually bonded to the second electrodes 212 of the plurality of second elements 21B. Each of the plurality of third bonding portions 322 can be opposed to the second electrode 212 of any one of the plurality of second elements 21B.

[0098] As Figure 10 and Figure 18 shown, a plurality of third connecting portions 323 can be connected to both sides of the plurality of third bonding portions 322 in the third direction y. Moreover, the plurality of third connecting portions 323 can be connected to any one of the pair of main body portions 321 and the plurality of intermediate portions 326. When observed in the second direction x, each of the plurality of third connecting portions 323 can be inclined in a direction away from the second main surface 122A of the second conductive layer 122 as it goes from any one of the plurality of third bonding portions 322 toward the pair of main body portions 321 and the plurality of intermediate portions 326.

[0099] As Figure 10 and Figure 14 shown, a pair of fourth bonding portions 324 can be bonded to the covering portion 15A of the third power terminal 15. The pair of fourth bonding portions 324 can be opposed to the covering portion 15A.

[0100] As Figure 10 and Figure 14 shown, a pair of fourth connecting portions 325 can be connected to the pair of main body portions 321 and the pair of fourth bonding portions 324. When observed in the third direction y, the pair of fourth connecting portions 325 can be inclined in a direction away from the first main surface 121A of the first conductive layer 121 as it goes from the pair of fourth bonding portions 324 toward the pair of main body portions 321.

[0101] As Figure 10 and Figure 19As shown, a plurality of cross beam portions 327 may be arranged along the third direction y. When observed in the first direction z, the plurality of cross beam portions 327 may include regions that individually overlap with a plurality of first joint portions 312 of the first conduction member 31. On both sides in the third direction y of the cross beam portion 327 located at the center in the third direction y among the plurality of cross beam portions 327, they may be connected to a plurality of intermediate portions 326. On both sides in the third direction y of the remaining two cross beam portions 327 among the plurality of cross beam portions 327, they may be connected to any one of a pair of main body portions 321 and any one of the plurality of intermediate portions 326. When observed in the second direction x, the plurality of cross beam portions 327 may be convex toward the side where the first main surface 121A of the first conductive layer 121 faces in the first direction z.

[0102] As Figure 15 , Figure 17 and Figure 18 shown, the semiconductor device B may further include a third conductive joint layer 35. The third conductive joint layer 35 may be interposed between the second electrodes 212 of the plurality of second elements 21B and the plurality of third joint portions 322. The third conductive joint layer 35 may conductively join the second electrodes 212 of the plurality of second elements 21B and the plurality of third joint portions 322. The third conductive joint layer 35 may be, for example, solder. In addition, the third conductive joint layer 35 may include a sintered body of metal particles.

[0103] As Figure 14 shown, the semiconductor device B may further include a fourth conductive joint layer 36. The fourth conductive joint layer 36 may be interposed between the covering portion 15A of the third power terminal 15 and a pair of fourth joint portions 324. The fourth conductive joint layer 36 may conductively join the covering portion 15A and a pair of fourth joint portions 324. The fourth conductive joint layer 36 may be, for example, solder. In addition, the fourth conductive joint layer 36 may be a sintered body including metal particles.

[0104] As Figure 14 , Figure 15 , Figure 18 and Figure 19 shown, the sealing resin 50 may cover the first conductive layer 121, the second conductive layer 122, the plurality of semiconductor elements 21, the first conduction member 31, and the second conduction member 32. Moreover, the sealing resin 50 may cover a part of each of the base material 11, the first power terminal 13, the second power terminal 14, and the third power terminal 15. The sealing resin 50 may have electrical insulation properties. The sealing resin 50 may be, for example, a material including a black epoxy resin. As Figure 8 and Figures 12 to 15 shown, the sealing resin 50 may have a top surface 51, a bottom surface 52, a pair of first side surfaces 53, a pair of second side surfaces 54, and a pair of recesses 55.

[0105] As Figure 14 andFigure 15 As shown, the top surface 51 can face the same side as the first main surface 121A of the first conductive layer 121 in the first direction z. As Figure 14 well as Figure 15 shown, the bottom surface 52 can face the side opposite to the top surface 51 in the first direction z. As Figure 13 shown, the heat dissipation layer 113 of the base material 11 can be exposed from the bottom surface 52.

[0106] As Figure 8 well as Figure 12 shown, a pair of first side surfaces 53 can be separated from each other in the second direction x. The pair of first side surfaces 53 can face the second direction x and extend along the third direction y. The pair of first side surfaces 53 can be connected to the top surface 51. The exposed portion 13B of the first power terminal 13 and the exposed portion 15B of the third power terminal 15 can be exposed from one of the pair of first side surfaces 53. The exposed portion 14B of the second power terminal 14 can be exposed from the other first side surface of the pair of first side surfaces 53.

[0107] As Figure 8 well as Figure 13 shown, a pair of second side surfaces 54 can be separated from each other in the third direction y. The pair of second side surfaces 54 can face opposite sides in the third direction y and extend along the second direction x. The pair of second side surfaces 54 can be connected to the top surface 51 and the bottom surface 52.

[0108] As Figure 8 well as Figure 13 shown, a pair of recesses 55 can be recessed from the first side surface 53 of the pair of first side surfaces 53 from which the exposed portion 13B of the first power terminal 13 and the exposed portion 15B of the third power terminal 15 are exposed, in the second direction x. The pair of recesses 55 can reach the bottom surface 52 from the top surface 51 in the first direction z. The pair of recesses 55 can be located on both sides of the first power terminal 13 in the third direction y.

[0109] Next, based on Figures 1 to 7 , the bonding layer 71, the covering layer 72, the housing 73, and the heat dissipation member 80 included in the semiconductor module A10 will be described.

[0110] The heat dissipation member 80 can be used for cooling the semiconductor device B. The heat dissipation member 80 can contain a metal. The heat dissipation member 80 can be, for example, a material containing aluminum. The base material 11 can be located on one side of the heat dissipation member 80 in the first direction z and be bonded to the heat dissipation member 80. The bottom surface 52 of the sealing resin 50 can face the heat dissipation member 80.

[0111] As Figures 2 to 5As shown, the heat dissipation component 80 may include a housing 81 and a heat dissipator 82. The housing 81 may have a hollow portion 811, an inlet 812, and an outlet 813. The hollow portion 811 may be located inside the housing 81. The inlet 812 and the outlet 813 may be connected to the hollow portion 811. The inlet 812 and the outlet 813 may be located on opposite sides of the hollow portion 811 with respect to the third direction y. In the heat dissipation component 80, a structure may be adopted in which a refrigerant flows from the inlet 812 through the hollow portion 811 to the outlet 813.

[0112] As Figures 2 to 5 shown, the housing 81 may have a mounting surface 81A facing the first direction z. The mounting surface 81A may face the heat dissipation layer 113 of the base material 11.

[0113] As Figures 2 to 5 shown, the hollow portion 811 of the housing 81 may include a sudden contraction portion 811A. The sudden contraction portion 811A refers to the portion where the cross-sectional area of the hollow portion 811 is the smallest in the direction orthogonal to the first direction z and in the interval from the inlet 812 to the outlet 813.

[0114] As Figures 2 to 5 shown, the heat dissipator 82 may be received in the sudden contraction portion 811A of the hollow portion 811 of the housing 81. The heat dissipator 82 may be connected to the housing 81. As Figure 2 and Figure 5 shown, the heat dissipator 82 may be a plurality of fins separated from each other in the second direction x. As Figure 2 and Figure 4 shown, the plurality of fins may extend in the third direction y respectively. Therefore, the plurality of fins may extend in the direction orthogonal to the first direction z and along the interval from the inlet 812 to the outlet 813 respectively.

[0115] As Figure 2 shown, when viewed in the first direction z, the first conductive layer 121 and the second conductive layer 122 may overlap with the sudden contraction portion 811A of the hollow portion 811 of the housing 81 respectively. Moreover, when viewed in the first direction z, the first conductive layer 121 and the second conductive layer 122 may overlap with the heat dissipator 82 respectively.

[0116] As Figures 4 to 6 shown, the bonding layer 71 may bond the mounting surface 81A of the housing 81 to the heat dissipation layer 113 of the base material 11. The bonding layer 71 may contain a metal. The bonding layer 71 may be formed by a sintered body containing metal particles such as silver, solder bonding, or solid-phase diffusion bonding. As Figure 6 shown, the bonding layer 71 may have an end face 71A facing the direction orthogonal to the first direction z.

[0117] As Figures 1 to 5As shown, the housing 73 can stand up from the heat dissipation component 80 in the first direction z toward the side where the first power terminal 13, the second power terminal 14, and the third power terminal 15 are located. The housing 73 can be an insulator. The housing 73 can include resin, for example. In the semiconductor module A10, the housing 73 can be joined to the housing 81 along the periphery of the mounting surface 81A of the housing 81. When observed in the first direction z, the housing 73 can respectively surround the encapsulation resin 50 and the covering layer 72. When observed in a direction orthogonal to the first direction z, the housing 73 can respectively overlap with a pair of first side surfaces 53 of the encapsulation resin 50 and a pair of second side surfaces 54 of the encapsulation resin 50.

[0118] As Figure 1 , Figure 2 , Figure 4 and Figure 5 shown, the covering layer 72 can cover a part of the heat dissipation component 80. The covering layer 72 can be located on the side where the base material 11 is in the first direction z of the heat dissipation component 80. The covering layer 72 can cover the mounting surface 81A of the housing 81 and the bottom surface 52 of the encapsulation resin 50, and respectively contact a pair of first side surfaces 53 of the encapsulation resin 50 and a pair of second side surfaces 54 of the encapsulation resin 50. As Figure 6 shown, the covering layer 72 can contact the end face 71A of the bonding layer 71. The coefficient of linear expansion of the covering layer 72 can be greater than that of the bonding layer 71. As Figure 7 shown, the covering layer 72 can contact the housing 73. The dimension of the covering layer 72 in the first direction z can be equal to the dimension of the housing 73 in the first direction z.

[0119] As Figure 2 , Figure 4 and Figure 5 shown, when observed in the first direction z, the covering layer 72 can respectively surround the bonding layer 71 and the encapsulation resin 50. When observed in the first direction z, the first power terminal 13, the second power terminal 14, and the third power terminal 15 can respectively overlap with the heat dissipation component 80 and the covering layer 72. As Figure 4 and Figure 5 shown, the covering layer 72 can be separated from the first power terminal 13, the second power terminal 14, and the third power terminal 15 respectively. When observed in the first direction z, the encapsulation resin 50 can overlap with the covering layer 72.

[0120] In the semiconductor module A10, the covering layer 72 can be formed through the following steps. First, the semiconductor device B is joined to the mounting surface 81A of the housing 81 via the joining layer 71. At this time, the heat dissipation layer 113 of the base material 11 is joined to the mounting surface 81A. Next, the frame 73 is joined to the mounting surface 81A. At this time, the frame 73 does not come into contact with the first power terminal 13, the second power terminal 14, and the third power terminal 15 respectively. Next, a molten resin material is caused to flow into the mounting surface 81A surrounded by the frame 73 using a dispenser or the like. In this case, a pair of first side surfaces 53 of the sealing resin 50 and a pair of second side surfaces 54 of the sealing resin 50 are respectively covered by the resin material. Finally, the resin material is cured, thereby completing the formation of the covering layer 72.

[0121] Next, the operation and effect of the semiconductor module A10 will be described.

[0122] The semiconductor module A10 may include: a heat dissipation component 80; a semiconductor device B joined to the heat dissipation component 80; and a covering layer 72 that covers a part of the heat dissipation component 80 and is an insulator. The semiconductor device B may include: a base material 11 located on one side in the first direction z of the heat dissipation component 80 and joined to the heat dissipation component 80; a first conductive layer 121; a semiconductor element 21 (first element 21A); a sealing resin 50; and a first power terminal 13 that is electrically connected to the first conductive layer 121 and the semiconductor element 21 and includes a portion that protrudes outward from the sealing resin 50 in a direction orthogonal to the first direction z. The covering layer 72 may be located on the above-mentioned one side in the first direction z of the heat dissipation component 80. When viewed in the first direction z, the first power terminal 13 may overlap the heat dissipation component 80 and the covering layer 72 respectively. By adopting this structure, the heat generated from the semiconductor device B is released to the outside from the base material 11 via the heat dissipation component 80, and the surface distance from the first power terminal 13 to the heat dissipation component 80 can be increased by the covering layer 72. Therefore, according to this structure, in the semiconductor module A10, the cooling efficiency of the semiconductor device B can be improved, and the reduction of the insulation breakdown voltage of the semiconductor device B can be suppressed.

[0123] When viewed in the first direction z, the sealing resin 50 may overlap the covering layer 72. By adopting this structure, the surface distance from the first power terminal 13 to the heat dissipation component 80 can be further increased. Thereby, the reduction of the insulation breakdown voltage of the semiconductor device B can be effectively suppressed.

[0124] The semiconductor module A10 may further include a bonding layer 71 that bonds the mounting surface 81A of the heat dissipation component 80 to the base material 11 and contains a metal. A covering layer 72 may be in contact with the bonding layer 71. Here, thermal strain caused by heat generated from the semiconductor device B may occur in the bonding layer 71. Therefore, by adopting this structure, the thermal strain concentrated on the bonding layer 71 is reduced by the covering layer 72, and thus the thermal strain of the bonding layer 71 can be suppressed. As a result, cracking generated in the bonding layer 71 can be suppressed. In this case, in order to effectively suppress the thermal strain of the bonding layer 71, it is preferable that the coefficient of linear expansion of the covering layer 72 is greater than that of the bonding layer 71.

[0125] The sealing resin 50 may have a bottom surface 52 facing the heat dissipation component 80 in the first direction z. The covering layer 72 may cover the bottom surface 52. By adopting this structure, the creepage distance from the first power terminal 13 to the bonding layer 71 is sufficiently enlarged, and an improvement in the bonding strength between the heat dissipation component 80 and the semiconductor device B can be achieved.

[0126] The sealing resin 50 may have a pair of first side surfaces 53 and a pair of second side surfaces 54 facing a direction orthogonal to the first direction z. The covering layer 72 may be in contact with the pair of first side surfaces 53 and the pair of second side surfaces 54, respectively. By adopting this structure, the creepage distance from the first power terminal 13 to the heat dissipation component 80 can be further enlarged. In this case, by adopting a structure in which the covering layer 72 surrounds the sealing resin 50 when observed in the first direction z, the enlargement of the creepage distance can be achieved more effectively.

[0127] The semiconductor module A10 may stand up from the heat dissipation component 80 toward the side where the first power terminal 13 is located in the first direction z and further include a frame body 73 as an insulator. When observed in the first direction z, the frame body 73 may surround the covering layer 72. By adopting this structure, when forming the covering layer 72, the excessive expansion of the molten resin material can be restricted by the frame body 73. And it is easy to adjust the size of the covering layer 72 in the first direction z by the frame body 73.

[0128] The dimensions of the first conductive layer 121 and the second conductive layer 122 in the first direction z may be larger than the dimension of the base material 11 in the first direction z. By adopting this structure, in each of the first conductive layer 121 and the second conductive layer 122, heat easily diffuses in a direction orthogonal to the first direction z. As a result, the thermal resistance of the first conductive layer 121 and the second conductive layer 122 in the first direction z is reduced.

[0129] In the semiconductor module A10, the heat dissipation component 80 may have a housing 81 including a mounting surface 81A. The housing 81 may have a hollow portion 811 located inside the housing 81, and an inlet 812 and an outlet 813 communicating with the hollow portion 811. When observed in the first direction z, the first conductive layer 121 may overlap with the hollow portion 811. By adopting this structure, the refrigerant can flow in the hollow portion 811, so that the cooling efficiency of the semiconductor device B can be improved.

[0130] The hollow portion 811 of the housing 81 may include a sudden constriction portion 811A having the smallest cross-sectional area in the direction orthogonal to the first direction z and in the interval from the inlet 812 to the outlet 813. When observed in the first direction z, the first conductive layer 121 may overlap with the sudden constriction portion 811A. By adopting this structure, the flow velocity of the refrigerant in the sudden constriction portion 811A can be increased, so that the cooling efficiency of the semiconductor device B can be further improved.

[0131] The heat dissipation component 80 may have a heat sink 82 housed in the sudden constriction portion 811A of the housing 81 and connected to the housing 81. When observed in the first direction z, the first conductive layer 121 and the second conductive layer 122 may respectively overlap with the heat sink 82. By adopting this structure, the contact area of the heat dissipation component 80 with respect to the refrigerant is enlarged, so that the cooling efficiency of the semiconductor device B can be further improved.

[0132] The heat sink 82 may include a plurality of fins. The plurality of fins may respectively extend in a direction orthogonal to the first direction z and along the direction of the interval from the inlet 812 to the outlet 813. By adopting this structure, the obstruction of the flow of the refrigerant in the sudden constriction portion 811A of the heat dissipation component 80 can be suppressed.

[0133] Second Embodiment:

[0134] Based on Figures 20 to 23 , the semiconductor module A20 according to the second embodiment of the present disclosure will be described. In these figures, the same or similar elements as those of the above semiconductor module A10 are denoted by the same reference numerals, and repeated descriptions are omitted.

[0135] In the semiconductor module A20, the fact that the housing 73 is not provided and the structure of the covering layer 72 are different from those of the semiconductor module A10.

[0136] As Figures 20 to 22As shown, the cover layer 72 can reach the entire periphery of the mounting surface 81A of the housing 81. The cover layer 72 can be made of a resin sheet or a material containing ceramics. The cover layer 72 can be separated from a pair of first side surfaces 53 of the sealing resin 50 and a pair of second side surfaces 54 of the sealing resin 50, respectively. When observed in the first direction z, the sealing resin 50 can overlap with the cover layer 72. When observed in the first direction z, the cover layer 72 can surround the bonding layer 71 and the sealing resin 50, respectively. As Figure 23 shown, the cover layer 72 can also be separated from the end surface 71A of the bonding layer 71 and the bottom surface 52 of the sealing resin 50, respectively. The size of the cover layer 72 in the first direction z can be smaller than the size of the bonding layer 71 in the first direction z.

[0137] Next, the operation and effect of the semiconductor module A20 will be described.

[0138] The semiconductor module A20 can include: a heat dissipation component 80; a semiconductor device B, which is bonded to the heat dissipation component 80; and a cover layer 72, which covers a part of the heat dissipation component 80 and is an insulator. The semiconductor device B can include: a substrate 11, which is located on one side of the heat dissipation component 80 in the first direction z and is bonded to the heat dissipation component 80; a first conductive layer 121; a semiconductor element 21 (first element 21A); a sealing resin 50; and a first power terminal 13, which is electrically connected to the first conductive layer 121 and the semiconductor element 21 and includes a portion that protrudes outward from the sealing resin 50 in a direction orthogonal to the first direction z. The cover layer 72 can be located on the above-mentioned one side of the heat dissipation component 80 in the first direction z. When observed in the first direction z, the first power terminal 13 can overlap with the heat dissipation component 80 and the cover layer 72, respectively. Therefore, according to this structure, in the semiconductor module A20, it is also possible to improve the cooling efficiency of the semiconductor device B and suppress the reduction of the insulation breakdown voltage of the semiconductor device B. Moreover, the semiconductor module A20 has the same operation and effect as the semiconductor module A10 by having a structure common to the semiconductor module A10.

[0139] Third Embodiment:

[0140] Based on Figures 24 to 27 , the semiconductor module A30 according to the third embodiment of the present disclosure will be described. In these figures, the same reference numerals are assigned to the same or similar elements as those in the above-mentioned semiconductor module A10, and repeated descriptions are omitted.

[0141] In the semiconductor module A30, the fact that it does not have the frame 73 and the structures of the cover layer 72 and the heat dissipation component 80 are different from those of the semiconductor module A10.

[0142] As Figure 25 and Figure 26As shown, the housing 81 may have a groove portion 814 that is located outside the bonding layer 71 when viewed in the first direction z and is recessed from the mounting surface 81A of the housing 81. When viewed in the first direction z, the groove portion 814 may surround the bonding layer 71 and the sealing resin 50, respectively. At least a part of the covering layer 72 may be received in the groove portion 814. When viewed in the first direction z, the first power terminal 13, the second power terminal 14, the third power terminal 15, and the sealing resin 50 may overlap the groove portion 814, respectively. The mounting surface 81A may include a region that is not covered by the covering layer 72 and is exposed to the outside.

[0143] As Figures 24 to 26 shown, the covering layer 72 may cover the bottom surface 52 of the sealing resin 50 and be in contact with a pair of first side surfaces 53 of the sealing resin 50 and a pair of second side surfaces 54 of the sealing resin 50, respectively. As Figure 27 shown, the covering layer 72 may be in contact with the end surface 71A of the bonding layer 71. A part of the covering layer 72 may bulge in the first direction z and protrude from the groove portion 814 of the housing 81. The covering layer 72 can be formed by flowing a molten resin material into the groove portion 814 of the housing 81 using a dispenser or the like after bonding the semiconductor device B to the mounting surface 81A of the housing 81 via the bonding layer 71.

[0144] Next, the operation and effect of the semiconductor module A30 will be described.

[0145] The semiconductor module A30 may include: a heat dissipation member 80; a semiconductor device B that is bonded to the heat dissipation member 80; and a covering layer 72 that covers a part of the heat dissipation member 80 and is an insulator. The semiconductor device B may include: a substrate 11 that is located on one side of the heat dissipation member 80 in the first direction z and is bonded to the heat dissipation member 80; a first conductive layer 121; a semiconductor element 21 (first element 21A); a sealing resin 50; and a first power terminal 13 that is electrically connected to the first conductive layer 121 and the semiconductor element 21 and includes a portion that protrudes outward from the sealing resin 50 in a direction orthogonal to the first direction z. The covering layer 72 may be located on the above-mentioned one side of the heat dissipation member 80 in the first direction z. When viewed in the first direction z, the first power terminal 13 may overlap the heat dissipation member 80 and the covering layer 72, respectively. Therefore, according to this structure, in the semiconductor module A30, it is also possible to improve the cooling efficiency of the semiconductor device B and suppress the reduction of the insulation breakdown voltage of the semiconductor device B. Moreover, the semiconductor module A30 has the same operation and effect as the semiconductor module A10 by having a structure common to the semiconductor module A10.

[0146] The heat dissipation component 80 may have a groove portion 814 that is located outside the bonding layer 71 when viewed in the first direction z and is recessed from the mounting surface 81A of the housing 81. At least a part of the covering layer 72 may be received in the groove portion 814. By adopting this structure, even without the frame 73, the covering layer 72 can be formed of a molten resin material.

[0147] A part of the covering layer 72 may bulge in the first direction z and protrude from the groove portion 814. By adopting this structure, a structure can be formed in which the covering layer 72 covers the bottom surface 52 of the sealing resin 50 and the covering layer 72 is in contact with the bonding layer 71, a pair of first side surfaces 53 of the sealing resin 50, and a pair of second side surfaces 54 of the sealing resin 50, respectively. Thereby, it is possible to simultaneously suppress a decrease in the withstand voltage insulation of the semiconductor device B and the generation of cracks in the bonding layer 71 caused by heat generated from the semiconductor device B.

[0148] Fourth Embodiment:

[0149] Based on Figure 28 and Figure 29 , the semiconductor module A40 according to the fourth embodiment of the present disclosure will be described. In these figures, the same or similar elements as those of the above semiconductor module A10 are denoted by the same reference numerals, and repeated descriptions are omitted.

[0150] In the semiconductor module A40, the structures of the covering layer 72 and the frame 73 are different from those of the semiconductor module A10.

[0151] As Figure 28 shown, when viewed in the first direction z, the area of the covering layer 72 may be smaller than the area of the covering layer 72 of the semiconductor module A10. Corresponding to the shape of the covering layer 72, the extension of the frame 73 may be shorter than the extension of the frame 73 of the semiconductor module A10. As Figure 28 and Figure 29 shown, the region of the mounting surface 81A of the housing 81 that does not overlap with the first power terminal 13, the second power terminal 14, and the third power terminal 15 of the semiconductor device B when viewed in the first direction z may be exposed to the outside. Thus, if the requirement that the first power terminal 13 overlaps with the heat dissipation component 80 and the covering layer 72, respectively, when viewed in the first direction z is satisfied, the range of the covering layer 72 covering the mounting surface 81A can be freely set as in the semiconductor module A40.

[0152] Next, the effects of the semiconductor module A40 will be described.

[0153] The semiconductor module A40 may include: a heat dissipation component 80; a semiconductor device B, which is joined to the heat dissipation component 80; and a covering layer 72, which covers a part of the heat dissipation component 80 and is an insulator. The semiconductor device B may include: a substrate 11, which is located on one side in the first direction z of the heat dissipation component 80 and is joined to the heat dissipation component 80; a first conductive layer 121; a semiconductor element 21 (first element 21A); a sealing resin 50; and a first power terminal 13, which is electrically connected to the first conductive layer 121 and the semiconductor element 21 and includes a part that protrudes outward from the sealing resin 50 in a direction orthogonal to the first direction z. The covering layer 72 may be located on the above-mentioned one side in the first direction z of the heat dissipation component 80. When observed in the first direction z, the first power terminal 13 may overlap the heat dissipation component 80 and the covering layer 72 respectively. Therefore, according to this structure, in the semiconductor module A40, it is also possible to improve the cooling efficiency of the semiconductor device B and suppress the reduction of the insulation breakdown voltage of the semiconductor device B. Moreover, the semiconductor module A40 has the same structure as the semiconductor module A10 and exhibits the same effects as the semiconductor module A10.

[0154] Fifth Embodiment:

[0155] Based on Figure 30 and Figure 32 , the semiconductor module A50 according to the fifth embodiment of the present disclosure will be described. In these figures, the same or similar elements as those of the above-mentioned semiconductor module A10 are denoted by the same reference numerals, and repeated descriptions are omitted.

[0156] In the semiconductor module A50, the structure of the heat dissipation component 80 is different from that of the semiconductor module A10.

[0157] As Figures 30 to 32 shown, the heat dissipation component 80 may have a base 83 and a heat dissipator 84 instead of the housing 81 and the heat dissipator 82. The base 83 may be in a flat plate shape. The base 83 may have a mounting surface 83A and a back surface 83B. The mounting surface 83A and the back surface 83B may face opposite sides in the first direction z. The mounting surface 83A may face the heat dissipation layer 113 of the substrate 11. The bonding layer 71 may be in contact with the mounting surface 83A. The covering layer 72 may cover the mounting surface 83A. The frame 73 may be joined to the base 83 along the periphery of the mounting surface 83A.

[0158] As Figure 31 and Figure 32 shown, the heat dissipator 84 may protrude from the back surface 83B of the base 83 in the first direction z. The heat dissipator 84 may be located on the side opposite to the substrate 11 with respect to the base 83 in the first direction z. The heat dissipator 84 may be exposed to the outside. The heat dissipator 84 may be a plurality of pins that are separated from each other in a direction orthogonal to the first direction z. When observed in the first direction z, asFigure 30 As shown, the heat sink 84 can overlap with the first conductive layer 121 and the second conductive layer 122 respectively.

[0159] Next, the effects of the semiconductor module A50 will be described.

[0160] The semiconductor module A50 can include: a heat dissipation component 80; a semiconductor device B joined to the heat dissipation component 80; and a covering layer 72 covering a part of the heat dissipation component 80 and being an insulator. The semiconductor device B can include: a base material 11 located on one side in the first direction z of the heat dissipation component 80 and joined to the heat dissipation component 80; a first conductive layer 121; a semiconductor element 21 (first element 21A); a sealing resin 50; and a first power terminal 13 electrically connected to the first conductive layer 121 and the semiconductor element 21 and including a portion protruding outward from the sealing resin 50 in a direction orthogonal to the first direction z. The covering layer 72 can be located on the above-mentioned one side in the first direction z of the heat dissipation component 80. When observed in the first direction z, the first power terminal 13 can overlap with the heat dissipation component 80 and the covering layer 72 respectively. Therefore, according to this structure, in the semiconductor module A50, it is also possible to improve the cooling efficiency of the semiconductor device B and suppress the reduction of the insulation breakdown voltage of the semiconductor device B. Moreover, the semiconductor module A50 has the same effects as the semiconductor module A10 by having a structure common to the semiconductor module A10.

[0161] In the semiconductor module A50, it can have a base 83 including a mounting surface 83A and a heat sink 84 protruding from the base 83 in the first direction z. The heat sink 84 can be exposed to the outside. When observed in the first direction z, the first conductive layer 121 and the second conductive layer 122 can respectively overlap with the heat sink 84. By adopting this structure, the surface area of the heat dissipation component 80 is further enlarged, so that the cooling efficiency of the semiconductor device B can be improved.

[0162] The present disclosure is not limited to the above embodiments. Various design changes can be freely made to the specific structures of each part of the present disclosure.

[0163] The present disclosure can include the embodiments described in the following appendices.

[0164] Appendix 1.

[0165] A semiconductor module, comprising:

[0166] a heat dissipation component;

[0167] a semiconductor device joined to the above heat dissipation component; and

[0168] a covering layer covering a part of the above heat dissipation component and being an insulator,

[0169] The above semiconductor device includes:

[0170] A base material, which is located on one side in the first direction of the above heat dissipation component and is joined to the above heat dissipation component;

[0171] A conductive layer, which is located on the side opposite to the above heat dissipation component with respect to the above base material and is joined to the above base material;

[0172] A semiconductor element, which is joined to the above conductive layer;

[0173] A sealing resin, which covers the above conductive layer and the above semiconductor element; and

[0174] A power terminal, which is electrically connected to the above conductive layer and the above semiconductor element and includes a portion that protrudes outward from the above sealing resin in a direction orthogonal to the above first direction,

[0175] The above covering layer is located on the above one side in the first direction of the above heat dissipation component,

[0176] When observed in the above first direction, the above power terminal overlaps with the above heat dissipation component and the above covering layer respectively.

[0177] Supplementary Note 2.

[0178] The semiconductor module according to Supplementary Note 1, wherein

[0179] The above covering layer is away from the above power terminal.

[0180] Supplementary Note 3.

[0181] The semiconductor module according to Supplementary Note 2, wherein

[0182] When observed in the above first direction, the above sealing resin overlaps with the above covering layer.

[0183] Supplementary Note 4.

[0184] The semiconductor module according to Supplementary Note 3, wherein

[0185] The above heat dissipation component has a mounting surface that faces the side opposite to the above base material in the above first direction,

[0186] It further includes a bonding layer that bonds the above mounting surface to the above base material and contains a metal.

[0187] Supplementary Note 5.

[0188] The semiconductor module according to Supplementary Note 4, wherein

[0189] The above covering layer is in contact with the above bonding layer.

[0190] Supplementary Note 6.

[0191] The semiconductor module according to Supplementary Note 5, wherein

[0192] the linear expansion coefficient of the above-mentioned covering layer is greater than that of the above-mentioned bonding layer.

[0193] Supplementary Note 7.

[0194] The semiconductor module according to Supplementary Note 5, wherein

[0195] the above-mentioned sealing resin has a bottom surface facing the side opposite to the above-mentioned heat dissipation component in the above-mentioned first direction,

[0196] and the above-mentioned covering layer covers the bottom surface.

[0197] Supplementary Note 8.

[0198] The semiconductor module according to Supplementary Note 7, wherein

[0199] the above-mentioned sealing resin has a side surface facing the direction orthogonal to the above-mentioned first direction,

[0200] and the above-mentioned covering layer is in contact with the side surface.

[0201] Supplementary Note 9.

[0202] The semiconductor module according to Supplementary Note 8, wherein

[0203] when observed in the above-mentioned first direction, the above-mentioned covering layer surrounds the above-mentioned sealing resin.

[0204] Supplementary Note 10.

[0205] The semiconductor module according to Supplementary Note 9, wherein

[0206] it further includes a frame body that stands up from the above-mentioned heat dissipation component to the side where the above-mentioned power terminal is located in the above-mentioned first direction and is an insulator,

[0207] and when observed in the above-mentioned first direction, the above-mentioned frame body surrounds the above-mentioned covering layer.

[0208] Supplementary Note 11.

[0209] The semiconductor module according to Supplementary Note 4, wherein

[0210] the above-mentioned covering layer reaches the periphery of the above-mentioned mounting surface.

[0211] Supplementary Note 12.

[0212] The semiconductor module according to Supplementary Note 4, wherein

[0213] The above heat dissipation component has a groove portion that is located outside the bonding layer when viewed in the above first direction and is recessed from the mounting surface.

[0214] At least a part of the above covering layer is received in the above groove portion.

[0215] Supplementary Note 13.

[0216] The semiconductor module according to Supplementary Note 12, wherein

[0217] A part of the above covering layer bulges in the above first direction and protrudes from the above groove portion.

[0218] Supplementary Note 14.

[0219] The semiconductor module according to any one of Supplementary Notes 4 to 13, wherein

[0220] The above heat dissipation component has a housing including the above mounting surface.

[0221] The above housing has a hollow portion located inside the housing, and an inlet and an outlet communicating with the hollow portion.

[0222] When viewed in the above first direction, the above conductive layer overlaps with the hollow portion.

[0223] Supplementary Note 15.

[0224] The semiconductor module according to Supplementary Note 14, wherein

[0225] The above hollow portion includes a rapid constriction portion having the smallest cross-sectional area in a direction orthogonal to the above first direction and in an interval from the above inlet to the above outlet.

[0226] When viewed in the above first direction, the above conductive layer overlaps with the rapid constriction portion.

[0227] Supplementary Note 16.

[0228] The semiconductor module according to Supplementary Note 15, wherein

[0229] The above heat dissipation component has a heat sink that is received in the above rapid constriction portion and is connected to the housing.

[0230] When viewed in the above first direction, the above conductive layer overlaps with the heat sink.

[0231] Supplementary Note 17.

[0232] The semiconductor module according to any one of Supplementary Notes 4 to 13, wherein

[0233] The above heat dissipation component has:

[0234] A base including the above mounting surface; and

[0235] A heat sink, which is located on the side opposite to the above substrate with respect to the above base and protrudes from the above base in the above first direction,

[0236] The above heat sink is exposed to the outside,

[0237] When observed in the above first direction, the above conductive layer overlaps with the above heat sink.

[0238] Explanation of symbols

[0239] A10, A20, A30, A40, A50 - semiconductor module; B - semiconductor device; 11 - substrate; 111 - insulating layer; 112 - intermediate layer; 113 - heat dissipation layer; 121 - first conductive layer; 121A - first main surface; 122 - second conductive layer; 122A - second main surface; 123 - bonding layer; 13 - first power terminal; 13A - covering portion; 13B - exposed portion; 14 - second power terminal; 14A - covering portion; 14B - exposed portion; 15 - third power terminal; 15A - covering portion; 15B - exposed portion; 161 - first signal terminal; 162 - second signal terminal; 171 - third signal terminal; 172 - fourth signal terminal; 181 - fifth signal terminal; 182 - sixth signal terminal; 19 - seventh signal terminal; 21 - semiconductor element; 21A - first element; 21B - second element; 211 - first electrode; 212 - second electrode; 213 - third electrode; 214 - fourth electrode; 22 - thermistor; 23 - conductive bonding layer; 31 - first conduction component; 311 - main body portion; 312 - first bonding portion; 313 - first connection portion; 314 - second bonding portion; 315 - second connection portion; 32 - second conduction component; 321 - main body portion; 322 - third bonding portion; 323 - third connection portion; 324 - fourth bonding portion; 325 - fourth connection portion; 326 - intermediate portion; 327 - crossbeam portion; 33 - first conductive bonding layer; 34 - second conductive bonding layer; 35 - third conductive bonding layer; 36 - fourth conductive bonding layer; 41 - first wire; 42 - second wire; 43 - third wire; 44 - fourth wire; 50 - sealing resin; 51 - top surface; 52 - bottom surface; 53 - first side surface; 54 - second side surface; 55 - recess; 60 - control wiring; 601 - first wiring; 602 - second wiring; 61 - insulating layer; 62 - wiring layer; 621 - first wiring layer; 622 - second wiring layer; 623 - third wiring layer; 624 - fourth wiring layer; 625 - fifth wiring layer; 63 - metal layer; 64 - sleeve; 641 - end face; 68 - first adhesive layer; 69 - second adhesive layer; 71 - bonding layer; 71A - end face; 72 - covering layer; 73 - housing; 80 - heat dissipation component; 81 - housing; 81A - mounting surface; 811 - hollow portion; 811A - rapid constriction portion; 812 - inlet; 813 - outlet; 82 - heat sink; 83 - base; 83A - mounting surface; 83B - back surface; 84 - heat sink; z - first direction; x - second direction; y - third direction.

Claims

1. A semiconductor module, characterized in that, Comprising: A heat dissipation component; A semiconductor device, which is joined to the above-mentioned heat dissipation component; and A covering layer, which covers a part of the above-mentioned heat dissipation component and is an insulator, The above-mentioned semiconductor device comprises: A substrate, which is located on one side in the first direction of the above-mentioned heat dissipation component and is joined to the above-mentioned heat dissipation component; A conductive layer, which is located on the side opposite to the above-mentioned heat dissipation component with respect to the above-mentioned substrate and is joined to the above-mentioned substrate; A semiconductor element, which is joined to the above-mentioned conductive layer; A sealing resin, which covers the above-mentioned conductive layer and the above-mentioned semiconductor element; and A power terminal, which is electrically connected to the above-mentioned conductive layer and the above-mentioned semiconductor element and includes a portion that protrudes outward from the above-mentioned sealing resin in a direction orthogonal to the above-mentioned first direction, The above-mentioned covering layer is located on the above-mentioned one side in the first direction of the above-mentioned heat dissipation component, When observed in the above-mentioned first direction, the above-mentioned power terminal overlaps with the above-mentioned heat dissipation component and the above-mentioned covering layer respectively.

2. The semiconductor module according to claim 1, wherein The above-mentioned covering layer is away from the above-mentioned power terminal.

3. The semiconductor module according to claim 2, wherein When observed in the above-mentioned first direction, the above-mentioned sealing resin overlaps with the above-mentioned covering layer.

4. The semiconductor module according to claim 3, wherein The above-mentioned heat dissipation component has a mounting surface that faces the side opposite to the above-mentioned substrate in the above-mentioned first direction, It further comprises a bonding layer, which bonds the above-mentioned mounting surface to the above-mentioned substrate and contains metal.

5. The semiconductor module according to claim 4, wherein The above-mentioned covering layer is in contact with the above-mentioned bonding layer.

6. The semiconductor module according to claim 5, wherein The coefficient of linear expansion of the above-mentioned covering layer is greater than that of the above-mentioned bonding layer.

7. The semiconductor module according to claim 5, wherein The above-mentioned sealing resin has a bottom surface that faces the side opposite to the above-mentioned heat dissipation component in the above-mentioned first direction, The above-mentioned covering layer covers the above-mentioned bottom surface.

8. The semiconductor module according to claim 7, wherein The above-mentioned sealing resin has a side surface that faces a direction orthogonal to the above-mentioned first direction, The above-mentioned covering layer is in contact with the above-mentioned side surface.

9. The semiconductor module according to claim 8, wherein When observed in the above-mentioned first direction, the above-mentioned covering layer surrounds the above-mentioned sealing resin.

10. The semiconductor module according to claim 9, wherein It further comprises a frame, which stands up from the above-mentioned heat dissipation component in the above-mentioned first direction toward the side where the above-mentioned power terminal is located and is an insulator, When observed in the above-mentioned first direction, the above-mentioned frame surrounds the above-mentioned covering layer.

11. The semiconductor module according to claim 4, wherein The above-mentioned covering layer reaches the periphery of the above-mentioned mounting surface.

12. The semiconductor module according to claim 4, wherein The above-mentioned heat dissipation component has a groove portion, which is located outside the above-mentioned bonding layer when observed in the above-mentioned first direction and is recessed from the above-mentioned mounting surface, At least a part of the above-mentioned covering layer is received in the above-mentioned groove portion.

13. The semiconductor module according to claim 12, wherein A part of the above-mentioned covering bulges in the above-mentioned first direction and protrudes from the above-mentioned groove portion.

14. The semiconductor module according to any one of claims 4 to 13, characterized in that the above-mentioned heat dissipation component has a housing including the above-mentioned mounting surface, the above-mentioned housing has a hollow portion located inside the above-mentioned housing, and an inlet and an outlet communicating with the above-mentioned hollow portion, when observed in the above-mentioned first direction, the above-mentioned conductive layer overlaps with the above-mentioned hollow portion.

15. The semiconductor module according to claim 14, characterized in that the above-mentioned hollow portion includes a rapid constriction portion having the smallest cross-sectional area in a direction orthogonal to the above-mentioned first direction and in the section from the above-mentioned inlet to the above-mentioned outlet, when observed in the above-mentioned first direction, the above-mentioned conductive layer overlaps with the above-mentioned rapid constriction portion.

16. The semiconductor module according to claim 15, characterized in that the above-mentioned heat dissipation component has a heat dissipation body, which is received in the above-mentioned rapid constriction portion and is connected to the above-mentioned housing, when observed in the above-mentioned first direction, the above-mentioned conductive layer overlaps with the above-mentioned heat dissipation body.

17. The semiconductor module according to any one of claims 4 to 13, characterized in that the above-mentioned heat dissipation component has: a base portion including the above-mentioned mounting surface; and a heat dissipation body, which is located on the side opposite to the above-mentioned base material with reference to the above-mentioned base portion and protrudes in the above-mentioned first direction from the above-mentioned base portion, the above-mentioned heat dissipation body is exposed to the outside, when observed in the above-mentioned first direction, the above-mentioned conductive layer overlaps with the above-mentioned heat dissipation body.

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