Preparation method of laser-induced graphene on bamboo wood
By optimizing laser parameters using a 10.6μm CO2 laser engraving machine and Raman spectroscopy test on bamboo, the problems of long periods and high energy consumption in laser-induced graphene preparation are solved, and rapid and low-cost graphene preparation is achieved, which is suitable for industrial and seawater desalination.
Patent Information
- Application Number
- CN202510201492.9
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-02-24
- Publication Date
- 2025-07-08
AI Technical Summary
In the existing laser-induced graphene technology, there are problems such as long acquisition period, high energy consumption, and uncertainty in laser power and sweep speed, resulting in the decline in graphene quality.
A 10.6μm CO2 laser engraving machine was used to perform laser direct writing on bamboo, combined with Raman spectroscopy test, laser parameters were optimized to prepare laser-induced graphene on bamboo. The specific laser parameters were laser power 21-51W, the sweep speed was 112.5-262.5mm/s, the laser power was 10%, and the wavelength was 532nm.
The rapid preparation of graphene is achieved, and the cost is reduced. It is suitable for industrial and laboratory-scale production. The prepared graphene can be used for photothermal conversion materials in seawater desalination.
Smart Images
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Figure HDA0005283250280000012
Abstract
Description
Technical Field
[0001] The invention relates to the technical field of processing bio-based graphene materials, and in particular to a method for preparing laser-induced graphene on bamboo. Background Art
[0002] Graphene is a two-dimensional material composed of a single layer of carbon atoms arranged in a honeycomb hexagonal lattice. Graphene has many excellent properties, including ultra-high electrical conductivity, excellent mechanical strength, good photothermal conversion ability, high thermal conductivity and large specific surface area. Therefore, graphene has broad application prospects in electronics, energy storage, sensors and photothermal conversion applications. Compared with traditional graphene preparation methods such as chemical vapor deposition, thermal exfoliation and hydrothermal carbonization, laser-induced graphene (LIG) technology does not require the use of toxic chemical reagents, has the advantages of simple synthesis process, low cost and industrial deployment. Graphene has been successfully prepared in many polymers such as polyimide, polystyrene, aramid fabric and polydimethylsiloxane. During the laser etching process, when the laser is irradiated to the surface of the carbonaceous precursor, the local temperature rises, and the resulting temperature gradient can not only destroy the covalent bonds of the precursor, but also promote the rearrangement of carbon atoms and quickly assemble into a honeycomb graphene structure. This technology can easily prepare thin and porous graphene layers under ambient conditions, and has the advantages of rapid synthesis, one-step, eco-friendly, high precision, energy saving, etc., and has broad development prospects. However, in the process of laser-induced graphene, due to the uncertainty of laser power and laser scanning speed, there may be problems with the inability to induce graphene normally, which may also lead to the degradation of graphene quality. Summary of the invention
[0003] In view of the shortcomings of the current technology, the present invention provides a method for preparing laser-induced graphene on bamboo with fast synthesis speed, low cost, simple operation and eco-friendliness. The method can solve the problems of long graphene sample acquisition cycle and high energy consumption to a certain extent.
[0004] The technical solution provided by the present invention is:
[0005] A method for preparing laser-induced graphene on bamboo, comprising the following steps:
[0006] S1, Preparation of laser-induced graphene on bamboo:
[0007] The bamboo was placed on a laser direct writing processing system for laser irradiation. A 10.6μm CO2 laser engraving machine was used to perform laser-induced graphene operations on the bamboo using laser direct writing technology.
[0008] S2, Obtaining the optimal laser parameters for laser-induced graphene:
[0009] Place the bamboo sample on a 10.6μm CO2 laser processing platform and perform laser direct writing operations to obtain laser-induced graphene samples under different laser parameters. Then, use Raman spectroscopy to test the Raman spectra of the graphene induced on the bamboo under different laser parameters. Turn on the spectral power supply in sequence, open the Raman software on the computer, then turn on the Raman laser, preheat for 15 minutes, place the prepared graphene sample on a glass slide and put it under the microscope, manually focus, close the black light-shielding curtain of the Raman instrument to make the sample in a dark environment, set the Raman parameters, and finally click the test button to perform the test to obtain the Raman spectrogram of the graphene sample.
[0010] Preferably, the graphitization of the bamboo substrate in S1 is carried out under ambient conditions.
[0011] Preferably, the laser in S1 is a CO2 laser, specifically a 10.6μm CO2 laser.
[0012] Preferably, the laser power in the laser processing process in S2 is 21 - 51W.
[0013] Preferably, the laser scanning speed in the laser processing process in S2 is 112.5 - 262.5mm / s.
[0014] Preferably, the laser power of the laser confocal Raman microscope in S2 is 10%, and the laser wavelength is 532nm.
[0015] Preferably, the optimal laser parameters for laser-induced graphene in S2 are specifically that the laser power is 45W and the laser scanning speed is 150mm / s. At this time, the prepared graphene I D / I G value is the smallest, and the smallest I D / I G value is 0.74.
[0016] The present invention has the following beneficial effects:
[0017] 1. The present invention places bamboo under ambient conditions for laser induction to prepare graphene samples, and the graphene on the bamboo can be used as a photothermal conversion material in seawater desalination.
[0018] 2. The graphene preparation time of the present invention is short, and the preparation process is simple, which can be used for large-scale industrial and laboratory production.
[0019] 3. The bamboo substrate used to prepare laser-induced graphene in the present invention has a fast growth rate, is extremely easy to obtain, has a low cost and is environmentally friendly, which greatly reduces the preparation cost of graphene. Brief Description of the Drawings
[0020] Figure 1It is a schematic diagram of the preparation process of the present invention.
[0021] Figure 2 It is a Raman spectrum test chart of the present invention. Detailed implementation manners
[0022] The following examples are detailed descriptions of the specific preparation methods of the invention.
[0023] Example 1:
[0024] S1, Preparation of laser-induced graphene on bamboo:
[0025] Place the bamboo on a laser direct writing processing system for laser irradiation. A 10.6μm CO2 laser engraving machine is used, and the laser direct writing technology is utilized to operate on the laser-induced graphene on the bamboo.
[0026] S2, Obtaining the optimal laser parameters of laser-induced graphene:
[0027] Place the bamboo sample on a 10.6μm CO2 laser processing platform and perform laser direct writing operations. During the laser processing, the laser power is 21W and the laser scanning speed is 150mm / s. Then, use Raman spectroscopy to test the Raman spectrum of the laser-induced graphene on the bamboo. First, turn on the spectrum power supply, then turn on the Raman software on the computer, and then turn on the Raman laser and preheat for 15 minutes. Then, place the prepared graphene sample on a glass slide and place it under the microscope for manual focusing. Close the black light-shielding curtain of the Raman instrument to make the sample in a dark environment. Set the Raman parameter laser power to 10% and the laser wavelength to 532nm. Finally, click the test button to perform the test to obtain the Raman spectrum diagram of the graphene sample.
[0028] Example 2:
[0029] S1, Preparation of laser-induced graphene on bamboo:
[0030] Place the bamboo on a laser direct writing processing system for laser irradiation. A 10.6μm CO2 laser engraving machine is used, and the laser direct writing technology is utilized to operate on the laser-induced graphene on the bamboo.
[0031] S2, Obtaining the optimal laser parameters of laser-induced graphene:
[0032] Place the bamboo sample on a 10.6 μm CO2 laser processing platform and perform laser direct writing. During the laser processing, the laser power is 27 W and the laser scanning speed is 150 mm / s. Then, use Raman spectroscopy to test the Raman spectrum of the graphene induced by the laser on the bamboo. Turn on the spectrum power supply in sequence, open the Raman software on the computer, then turn on the Raman laser and preheat for 15 min. Then, place the prepared graphene sample on a glass slide and place it under the microscope, manually focus, close the black light-shielding curtain of the Raman instrument to make the sample in a dark environment, set the Raman parameter laser power to 10%, the laser wavelength to 532 nm, and finally click the test button to perform the test to obtain the Raman spectrum of the graphene sample.
[0033] Example 3:
[0034] S1, Preparation of laser-induced graphene on bamboo:
[0035] Irradiate the bamboo with a laser on a laser direct writing processing system. A 10.6 μm CO2 laser engraver is used, and the laser direct writing technology is used to perform the operation of laser-induced graphene on the bamboo.
[0036] S2, Obtaining the optimal laser parameters of laser-induced graphene:
[0037] Place the bamboo sample on a 10.6 μm CO2 laser processing platform and perform laser direct writing. During the laser processing, the laser power is 33 W and the laser scanning speed is 150 mm / s. Then, use Raman spectroscopy to test the Raman spectrum of the graphene induced by the laser on the bamboo. Turn on the spectrum power supply in sequence, open the Raman software on the computer, then turn on the Raman laser and preheat for 15 min. Then, place the prepared graphene sample on a glass slide and place it under the microscope, manually focus, close the black light-shielding curtain of the Raman instrument to make the sample in a dark environment, set the Raman parameter laser power to 10%, the laser wavelength to 532 nm, and finally click the test button to perform the test to obtain the Raman spectrum of the graphene sample.
[0038] Example 4:
[0039] S1, Preparation of laser-induced graphene on bamboo:
[0040] Irradiate the bamboo with a laser on a laser direct writing processing system. A 10.6 μm CO2 laser engraver is used, and the laser direct writing technology is used to perform the operation of laser-induced graphene on the bamboo.
[0041] S2, Obtaining the optimal laser parameters of laser-induced graphene:
[0042] Place the bamboo sample on a 10.6μm CO2 laser processing platform and perform laser direct writing operations. During the laser processing, the laser power is 39W and the laser scanning speed is 150mm / s. Then, use Raman spectroscopy to test the Raman spectrum of the graphene induced by the laser on the bamboo. Turn on the spectrum power supply in sequence, open the Raman software on the computer, then turn on the Raman laser and preheat for 15 minutes. Then, place the prepared graphene sample on a glass slide and place it under the microscope, manually focus, close the black light-shielding curtain of the Raman instrument to make the sample in a dark environment, set the Raman parameter laser power to 10%, the laser wavelength to 532nm, and finally click the test button to perform the test to obtain the Raman spectrum of the graphene sample.
[0043] Example 5:
[0044] S1, Preparation of laser-induced graphene on bamboo:
[0045] Irradiate the bamboo with a laser on a laser direct writing processing system. A 10.6μm CO2 laser engraving machine is used, and the laser direct writing technology is used to perform the operation of laser-induced graphene on the bamboo;
[0046] S2, Obtaining the optimal laser parameters of laser-induced graphene:
[0047] Place the bamboo sample on a 10.6μm CO2 laser processing platform and perform laser direct writing operations. During the laser processing, the laser power is 45W and the laser scanning speed is 150mm / s. Then, use Raman spectroscopy to test the Raman spectrum of the graphene induced by the laser on the bamboo. Turn on the spectrum power supply in sequence, open the Raman software on the computer, then turn on the Raman laser and preheat for 15 minutes. Then, place the prepared graphene sample on a glass slide and place it under the microscope, manually focus, close the black light-shielding curtain of the Raman instrument to make the sample in a dark environment, set the Raman parameter laser power to 10%, the laser wavelength to 532nm, and finally click the test button to perform the test to obtain the Raman spectrum of the graphene sample.
[0048] Example 6:
[0049] S1, Preparation of laser-induced graphene on bamboo:
[0050] Irradiate the bamboo with a laser on a laser direct writing processing system. A 10.6μm CO2 laser engraving machine is used, and the laser direct writing technology is used to perform the operation of laser-induced graphene on the bamboo;
[0051] S2, Obtaining the optimal laser parameters of laser-induced graphene:
[0052] Place the bamboo sample on a 10.6 μm CO2 laser processing platform and perform laser direct writing operations. During the laser processing, the laser power is 51 W and the laser scanning speed is 150 mm / s. Then, use Raman spectroscopy to test the Raman spectrum of the graphene induced by the laser on the bamboo. Turn on the spectrum power supply in sequence, open the Raman software on the computer, then turn on the Raman laser and preheat for 15 minutes. Then, place the prepared graphene sample on a glass slide and place it under the microscope, manually focus, close the black light-shielding curtain of the Raman instrument to make the sample in a dark environment, set the Raman parameter laser power to 10%, the laser wavelength to 532 nm, and finally click the test button to perform the test to obtain the Raman spectrum of the graphene sample.
[0053] Example 7:
[0054] S1, Preparation of laser-induced graphene on bamboo:
[0055] Place the bamboo on a laser direct writing processing system for laser irradiation. A 10.6 μm CO2 laser engraver is used, and the laser direct writing technology is used to perform the operation of laser-induced graphene on the bamboo;
[0056] S2, Obtaining the optimal laser parameters of laser-induced graphene:
[0057] Place the bamboo sample on a 10.6 μm CO2 laser processing platform and perform laser direct writing operations. During the laser processing, the laser power is 45 W and the laser scanning speed is 112.5 mm / s. Then, use Raman spectroscopy to test the Raman spectrum of the graphene induced by the laser on the bamboo. Turn on the spectrum power supply in sequence, open the Raman software on the computer, then turn on the Raman laser and preheat for 15 minutes. Then, place the prepared graphene sample on a glass slide and place it under the microscope, manually focus, close the black light-shielding curtain of the Raman instrument to make the sample in a dark environment, set the Raman parameter laser power to 10%, the laser wavelength to 532 nm, and finally click the test button to perform the test to obtain the Raman spectrum of the graphene sample.
[0058] Example 8:
[0059] S1, Preparation of laser-induced graphene on bamboo:
[0060] Place the bamboo on a laser direct writing processing system for laser irradiation. A 10.6 μm CO2 laser engraver is used, and the laser direct writing technology is used to perform the operation of laser-induced graphene on the bamboo;
[0061] S2, Obtaining the optimal laser parameters of laser-induced graphene:
[0062] Place the bamboo sample on a 10.6μm CO2 laser processing platform and perform laser direct writing operations. During the laser processing, the laser power is 45W and the laser scanning speed is 187.5mm / s. Then, use Raman spectroscopy to test the Raman spectrum of the graphene induced by the laser on the bamboo. Turn on the spectrum power supply in sequence, open the Raman software on the computer, then turn on the Raman laser and preheat for 15 minutes. Then, place the prepared graphene sample on a glass slide and place it under the microscope, manually focus, close the black light-shielding curtain of the Raman instrument to make the sample in a dark environment, set the Raman parameter laser power to 10%, the laser wavelength to 532nm, and finally click the test button to perform the test to obtain the Raman spectrum of the graphene sample.
[0063] Example 9:
[0064] S1, Preparation of laser-induced graphene on bamboo:
[0065] Irradiate the bamboo with a laser on a laser direct writing processing system. A 10.6μm CO2 laser engraver is used, and the laser direct writing technology is used to perform the operation of laser-induced graphene on the bamboo;
[0066] S2, Obtaining the optimal laser parameters for laser-induced graphene:
[0067] Place the bamboo sample on a 10.6μm CO2 laser processing platform and perform laser direct writing operations. During the laser processing, the laser power is 45W and the laser scanning speed is 225mm / s. Then, use Raman spectroscopy to test the Raman spectrum of the graphene induced by the laser on the bamboo. Turn on the spectrum power supply in sequence, open the Raman software on the computer, then turn on the Raman laser and preheat for 15 minutes. Then, place the prepared graphene sample on a glass slide and place it under the microscope, manually focus, close the black light-shielding curtain of the Raman instrument to make the sample in a dark environment, set the Raman parameter laser power to 10%, the laser wavelength to 532nm, and finally click the test button to perform the test to obtain the Raman spectrum of the graphene sample.
[0068] Example 10:
[0069] S1, Preparation of laser-induced graphene on bamboo:
[0070] Irradiate the bamboo with a laser on a laser direct writing processing system. A 10.6μm CO2 laser engraver is used, and the laser direct writing technology is used to perform the operation of laser-induced graphene on the bamboo;
[0071] S2, Obtaining the optimal laser parameters for laser-induced graphene:
[0072] Place the bamboo sample on a 10.6 μm CO2 laser processing platform and perform laser direct writing operations. During the laser processing, the laser power is 45 W and the laser scanning speed is 262.5 mm / s. Then, use Raman spectroscopy to test the Raman spectrum of the graphene induced on the bamboo. First, turn on the spectrum power supply, open the Raman software on the computer, then turn on the Raman laser and preheat it for 15 minutes. Next, place the prepared graphene sample on a glass slide and place it under the microscope. Manually focus, close the black light-shielding curtain of the Raman instrument to make the sample in a dark environment. Set the Raman parameters: the laser power is 10%, and the laser wavelength is 532 nm. Finally, click the test button to perform the test to obtain the Raman spectrum of the graphene sample.
[0073] As Figure 1 shown:
[0074] First, cut the bamboo into bamboo blocks, and then place the bamboo blocks under the irradiation of a 10.6 μm CO2 laser. Conduct experiments on laser-induced graphene with different laser powers and laser scanning speeds. Through experimental exploration, the optimal laser parameters for laser induction are obtained as follows: the laser power is 45 W and the laser scanning speed is 150 mm / s, and the bamboo is successfully induced into graphene material.
[0075] As Figure 2 shown:
[0076] Perform Raman spectroscopy characterization on the induced graphene to obtain the I D / I G value of 0.74. The appearance of the 2D peak indicates the formation of graphene, proving that the experimental result is a carbon material containing graphene.
Claims
1. A method for preparing laser-induced graphene on bamboo, comprising the following steps: S1. Preparation of laser-induced graphene on bamboo: Place the bamboo on a laser direct writing processing system for laser irradiation. A 10.6 μm CO2 laser engraving machine is used, and the operation of laser-induced graphene on bamboo is carried out by using the laser direct writing technology; S2. Obtaining the optimal laser parameters of laser-induced graphene: Place the bamboo sample on a 10.6 μm CO2 laser processing platform and perform laser direct writing operations to obtain laser-induced graphene samples under different laser parameters. Then, use Raman spectroscopy to test the Raman spectra of the graphene induced on the bamboo under the above different laser parameters. Turn on the spectral power supply in sequence, open the Raman software on the computer, then turn on the Raman laser, preheat for 15 minutes, then place the prepared graphene sample on a glass slide and place it under the microscope, manually focus, close the black light-shielding curtain of the Raman instrument to make the sample in a dark environment, set the Raman parameters, and finally click the test button to perform the test to obtain the Raman spectrogram of the graphene sample.
2. The preparation method of laser-induced graphene on bamboo according to claim 1, wherein: The graphitization of the bamboo substrate in S1 is carried out under environmental conditions.
3. The preparation method of laser-induced graphene on bamboo according to claim 1, wherein: The laser in S1 is a CO2 laser, specifically a 10.6 μm CO2 laser.
4. A method for preparing laser-induced graphene on bamboo according to claim 1, characterized in that: The laser power in the laser processing process in S2 is 21 - 51 W.
5. A method for preparing laser-induced graphene on bamboo according to claim 1, characterized in that: The laser scanning speed in the laser processing process in S2 is 112.5 - 262.5 mm / s.
6. The preparation method of laser-induced graphene on bamboo according to claim 1, wherein: The laser power of the laser confocal Raman microscope in S2 is 10%, and the laser wavelength is 532 nm.
7. A method for preparing laser-induced graphene on bamboo according to claim 1, characterized in that: The specific optimal laser parameters for laser-induced graphene in S2 are as follows: the laser power is 45 W, and the laser scanning speed is 150 mm / s. At this time, the prepared graphene I D / I G value is the smallest, and the smallest I D / I G value is 0.74.