Showerhead with air gap isolated plenum and overhead isolated gas distributor

Abstract

Showerheads are provided for independently delivering different, interreactive process gases to a wafer processing space. The showerhead includes a first gas distributor having a plurality of plenum structures separated from each other via gaps, and a second gas distributor positioned above the first gas distributor. The isolation gas from the second gas distributor may be flowed down onto the first gas distributor and through gaps between the plenum structures of the first gas distributor, thereby establishing an isolation gas curtain that avoids parasitic deposition of process gas released from each plenum structure on plenum structures that provide other gases.

Description

This application is a divisional application of an application with application number 201980033022.9, filing date May 10, 2019, and invention title "Showerhead and Overhead Isolated Gas Distributor with Air Gap Isolated Plenum". Incorporated by reference

[0001] The PCT application form is filed simultaneously with this specification as part of this application. Each application for which this application claims the benefit of its priority as identified in the PCT application form filed simultaneously is incorporated herein by reference in its entirety and for all purposes. BACKGROUND OF THE INVENTION

[0002] Many semiconductor processing operations are performed in a sealed semiconductor processing chamber, in which a semiconductor wafer or other substrate is supported on a wafer support or pedestal below a gas distributor, which is commonly referred to as a "showerhead". Discussed herein is a novel showerhead design for use in semiconductor processing equipment, particularly in semiconductor processing equipment in which there can be a sequential flow of multiple different types of semiconductor processing gases, such as in atomic layer deposition (ALD) and other processes. SUMMARY OF THE INVENTION

[0003] Details of one or more implementations of the subject matter described in this specification are set forth in the accompanying drawings and the following description. Other features, aspects, and advantages will become apparent from the description, the drawings, and the claims.

[0004] In some implementations, a device can be provided that includes a first gas distributor and a second gas distributor. The first gas distributor can include: a plurality of inflation chamber structures and multiple sets of gas distribution ports, each set of gas distribution ports being connected to a corresponding inflation chamber structure, and each inflation chamber structure including a corresponding inflation chamber volume. The multiple sets of gas distribution ports can include a first gas distribution port of a first set and a second gas distribution port of a second set, and the plurality of inflation chamber structures can include a first inflation chamber structure including a first inflation chamber volume and a second inflation chamber structure including a second inflation chamber volume. The first gas distribution port can be connected to the first inflation chamber structure and configured to direct gas flowing from the first inflation chamber volume through the first gas distribution port along a first average direction, while the second gas distribution port can be connected to the second inflation chamber structure and configured to direct gas flowing from the second inflation chamber volume through the second gas distribution port along a second average direction having a component aligned with the first average direction. When viewed along the first average direction, the first inflation chamber structure can be spaced apart from the second inflation chamber structure via at least a first gap. The second gas distributor can include an isolation gas inflation chamber volume and a plurality of isolation gas ports in fluid communication with the isolation gas inflation chamber volume, and the second gas distributor can be positioned such that the isolation gas ports are between the isolation gas inflation chamber volume and the first gas distributor. The isolation gas ports can be configured to direct gas flowing from the isolation gas inflation chamber volume through the isolation gas ports toward the first gas distributor and through the first gap.

[0005] In some further implementations, the first gap can be at least 2 mm. In some further implementations, the first gap can be between 2 mm and 40 mm.

[0006] In some further implementations, the first inflation chamber structure can include a first helical tube, and the second inflation chamber structure can include a second helical tube. The first helical tube and the second helical tube can be in the same plane, and can have substantially similar pitches, and can be arranged opposite each other in a radial array.

[0007] In some further implementations, each of the first inflation chamber structure and the second inflation chamber structure can be machined from a plate of solid material, and the edges of the first inflation chamber structure and the second inflation chamber structure can be rounded with a radius of at least 1 mm.

[0008] In some further implementations, the device may further include a plurality of structural supports, each of which connects two or more of the inflatable chamber structures together.

[0009] In some further implementations, the inflatable chamber structures may be arranged in an equally spaced radial array about a common central axis.

[0010] In some further implementations, each inflatable chamber structure may include one or more tubular structures that extend along corresponding one or more paths. In some such further implementations, each tubular structure may have an outer cross-section at a cross-sectional location in a plane perpendicular to the corresponding one or more paths, and such outer cross-section may be one or more of a circular cross-section, an oblong cross-section, an elliptical cross-section, and a teardrop cross-section. In some further or alternative implementations, the first gap may vary along the one or more paths.

[0011] In some further implementations, the gas distribution ports connected to each inflatable chamber volume may be arranged along the corresponding one or more paths.

[0012] In some further implementations, each inflatable chamber volume in the first gas distributor may be fluidly connected to a corresponding gas inlet through a corresponding fluid passage, and the corresponding gas inlet is positioned such that the second gas distributor is between the corresponding gas inlet and the first gas distributor. In some such further implementations, the first gas distributor and the second gas distributor may be configured to move relative to each other along the first average direction.

[0013] In some further implementations, each inflatable chamber structure may include a corresponding gas inlet, and the gas distribution ports arranged along each path may be spaced apart from each other by a distance that decreases as the flow path distance from the corresponding gas inlet increases.

[0014] In some further implementations, each inflatable chamber structure may include a corresponding gas inlet, and the sizes of the gas distribution ports arranged along each path may generally increase as the flow path distance from the corresponding gas inlet increases.

[0015] In some further implementations, the second gas distributor may have a back plate, a peripheral side wall, and a panel that define the isolated gas inflatable chamber volume; the peripheral side wall may be between the back plate and the panel, and the isolated gas ports may be provided by a plurality of holes that pass through and are distributed throughout the panel.

[0016] In some further implementations, the apparatus may further include: a semiconductor processing chamber; and a wafer support positioned within the semiconductor processing chamber; in such an implementation, both the first gas distributor and the second gas distributor may be centered above the wafer support.

[0017] In some further implementations, the apparatus may further include: an isolation gas source configured to supply an isolation gas to the isolation gas plenum volume; a first process gas source configured to supply a first process gas to the first plenum volume; and a second process gas source configured to supply a second process gas to the second plenum volume. In such an implementation, the first process gas and the second process gas may be different, and the isolation gas may be non-reactive with respect to both the first process gas and the second process gas.

[0018] In some implementations, a method of using an apparatus such as the apparatus described above may be provided. In such a method, one or more process gases may flow out of the first gas distributor. During such a flow of the process gas, an isolation gas may simultaneously flow through the second gas distributor. During some such flows of the process gas, the first process gas may flow out of the first plenum volume while the second process gas may flow out of the second plenum volume, and the first process gas and the second process gas may be reactive with respect to each other.

[0019] In some further implementations, details of one or more implementations of the subject matter described in this specification are set forth in the accompanying drawings and the following description. Other features, aspects, and advantages will become apparent from the description, the drawings, and the claims. It should be noted that the relative dimensions of the following drawings may not be drawn to scale. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] The various implementations disclosed herein are illustrated by way of example, and not by way of limitation, in the figures of the accompanying drawings, in which like reference numerals refer to like elements.

[0021] Figure 1 A top-down partial view of an exemplary first gas distributor in accordance with the present disclosure.

[0022] Figure 2 A side cross-sectional view of an exemplary first gas distributor and second gas distributor in accordance with the present disclosure.

[0023] Figure 3 A side cross-sectional view of an exemplary first gas distributor and second gas distributor in accordance with the present disclosure.

[0024] Figure 4 A top partial view of another exemplary first gas distributor according to the present disclosure.

[0025] Figure 5 Is Figure 4 An isometric view of an exemplary first gas distributor similar to the first gas distributor shown.

[0026] Figure 6 Is Figure 5 An isometric view of another exemplary single-piece first gas distributor similar to the first gas distributor shown but in a single-piece structure.

[0027] Figure 7 Is Figure 6 An isometric partial cross-sectional view of an exemplary single-piece first gas distributor of

[0028] Figure 8 A top partial view of another exemplary first gas distributor according to the present disclosure.

[0029] Figure 9 A side view of an exemplary gas distribution system incorporating the concepts discussed in the present disclosure.

[0030] Figure 10 Is Figure 9 A bottom view of an exemplary gas distribution system of

[0031] Figure 11 Is Figure 9 A three-dimensional partial cross-sectional view of an exemplary gas distribution system of

[0032] Figure 12 Is Figure 9 A side view of an exemplary gas distribution system of

[0033] Figure 13 Is Figure 9 A side view of an exemplary gas distribution system of

[0034] Figure 14 A side view of an exemplary gas distribution system installed in a semiconductor processing chamber of Figure 9 Is

[0035] The drawings depict only one example of the concepts discussed herein, and it will be readily understood that the concepts discussed herein may be implemented in a large number of alternative implementations, all of which are considered to be within the scope of the present disclosure. Detailed Description

[0036] Importantly, the concepts discussed herein are not limited to any single aspect or implementation discussed herein, nor to any combination and / or permutation of these aspects and / or implementations. Moreover, each and / or every implementation of an aspect of the present invention may be employed alone or in combination with one or more other aspects and / or their implementations. For the sake of brevity, many of these permutations and combinations will not be discussed and / or illustrated separately herein.

[0037] The inventors of the present invention have conceived a novel showerhead design for use in semiconductor processing operations involving the alternating application of two or more different types of precursors or other semiconductor processing gases. For example, in atomic layer deposition (ALD), a semiconductor wafer may be dosed using repeated cycles of two separately applied precursors (e.g., precursor A and precursor B). As precursor A flows over the wafer, a layer of precursor A may adsorb onto the semiconductor wafer. The precursor A is then flushed from the processing chamber using an inert purge gas (leaving the adsorbed precursor A), after which precursor B is flowed over the semiconductor wafer, whereupon precursor B reacts with precursor A in a self-limiting manner to form a monolayer-thick material layer. The unreacted precursor B is then swept from the chamber using an inert purge gas, and the process is repeated as needed to build up the desired material thickness layer by layer.

[0038] Since the precursors used in ALD operations react with each other after mixing, they are typically kept physically and substantially temporarily separated from each other in the showerhead / processing chamber. For example, an ALD showerhead can have two sets of gas distribution ports distributed on a panel, and each set of gas distribution ports is fluidly connected to a different internal plenum volume space of the showerhead, each being supplied with a different precursor gas. However, the inventors of the present invention have determined that such a conventional showerhead arrangement is vulnerable to unwanted reactions between the two precursors on the panel surface facing the wafer. More specifically, it has been found that a portion of the precursor gas leaving such a panel tends to reflux or slightly form vortices in the regions around the respective gas distribution ports, resulting in the precursors adsorbing not only on the semiconductor wafer but also on the panel itself. As a result, the panel experiences unwanted deposition, which accumulates over time and repeated wafer processing operations, has an adverse effect on the performance of the showerhead, and may cause damage or contamination to the wafers being processed using the showerhead. To address this accumulation problem, the showerhead requires cleaning operations or other treatments to return the showerhead to its original dimensional state. Such operations incur unwanted costs in terms of the cost of performing such operations and the production downtime experienced when cleaning the showerhead. In addition, the films deposited in some ALD operations may resist cleaning using atomic fluorine (which is a cleaning gas commonly used to remove unwanted deposition materials from semiconductor manufacturing equipment), or other cleaning techniques (such as dry etching typically), which means that the components to be cleaned must be removed and replaced or mechanically cleaned (such as grinding, machining, etc.) before reinstallation.

[0039] It should be noted that the above examples have been discussed in the context of atomic layer deposition, but the principles and concepts discussed herein generally apply to any semiconductor processing operation or tool involving two or more gases or reactants that are kept isolated from each other until they flow over a semiconductor wafer, such as, for example, atomic layer etching (ALE), plasma-enhanced chemical vapor deposition (PECVD), chemical vapor deposition (CVD), plasma-enhanced atomic layer deposition (PEALD), etc.

[0040] To address such issues, the inventors of the present invention conceived a novel showerhead design incorporating a first gas distributor in which each precursor is routed through a separate plenum structure that is generally in-plane with other plenum structures in the first gas distributor but is separated from each adjacent plenum structure by a gap (e.g., a gas gap) (it should be understood that a "gas gap" in this context refers to a gap that is not occupied by solid material, rather than a gap that contains actual "air" - most semiconductor processing operations are performed in a vacuum or low-pressure environment, and such an environment is typically kept as free of atmospheric air as possible). This showerhead additionally includes a second gas distributor having an isolation gas plenum structure with a plurality of isolation gas ports positioned above the first gas distributor to allow the isolation gas to flow over the first gas distributor and through the gas gaps between the plenum structures in the first gas distributor. In performing this operation, a generally continuous isolation gas curtain is created that flows between the various precursor gases released from each plenum structure in the first gas distributor. This isolation gas curtain serves to prevent the precursors released from the plenum structures in the first gas distributor from reaching the surfaces of other plenum structures in the first gas distributor, thereby avoiding the possible mixing of the various precursors on the surface of the first gas distributor.

[0041] Furthermore, in some implementations, the vertical distance between the first gas distributor and the second gas distributor can be adjusted so that the flow of the isolation gas has sufficient time to develop into a laminar flow by the time it reaches the gas distribution ports of the plenum structures in the first gas distributor, thereby reducing the likelihood of eddies or backflows near the surfaces of the plenum structures (and thus reducing the risk of precursor adsorption on the surfaces of the plenum structures).

[0042] It should be understood that the isolation gas is used herein to refer to a gas that is non-reactive with the various precursors that can flow through the plenum structures of the showerhead. Such isolation gases can include, for example, argon, nitrogen, and ammonia.

[0043] These concepts will be discussed in more detail below with reference to several exemplary implementations.

[0044] Figure 1 FIG. is a top-down partial view of an exemplary first gas distributor according to the present disclosure. In Figure 1 FIG., the first gas distributor 102 is shown as having a first plenum structure 106 that defines a first plenum volume 116 fluidly connected to a plurality of first gas distribution ports 126 that permit a first process gas flowing through the first plenum volume 116 to exit in a first average direction (e.g., downwardly into Figure 1flows out of the first plenum structure 106. The first average direction may be generally in a downward, vertical direction. It should be understood that reference to a gas flowing in an average direction (as the term is used herein) encompasses an air flow that is generally flowing in such an average direction. For example, if the first average direction is vertically downward, the gas flowing "along" the first average direction may encompass gases having different actual average air flow directions (e.g., within ±10% or ±20% of the first average direction). The first gas distributor 102 also includes a second plenum structure 108 that defines a second plenum volume 118 fluidly connected to a plurality of second gas distribution ports 128 that permit a second process gas to flow out of the second plenum structure 108 in a second average direction that has a component aligned with the first average direction; in many such implementations, the first average direction and the second average direction may be substantially the same. In this example, both the first plenum structure 106 and the second plenum structure 108 are helical, for example each being composed of a pipe member bent or coiled into a helix. As shown, the first plenum structure 106 may be supplied with a first process gas through a first gas inlet 162, and the second plenum structure 108 may be supplied with a second process gas through a second gas inlet 164. For structural purposes, the plenum structures of the first gas distributor 102 may be connected to each other by one or more structural supports 160 that may be brazed, welded, or otherwise attached to the plenum structures. The structural supports may be kept relatively thin (e.g., on the order of a few millimeters) to avoid significantly obstructing or interfering with the flow of the isolation gas through the first gas distributor from the second gas distributor.

[0045] Figure 1 The first plenum structure 106 and the second plenum structure 108 shown therein are arranged in a radial array about a common center point. Accordingly, the first plenum structure 106 is separated from the second plenum structure 108 by a first gap 140 that extends between the first plenum structure 106 and the second plenum structure 108 for a substantial complete length of either the first plenum structure 106 or the second plenum structure 108. In Figure 1In [the device], the first gap 140 is maintained constant along the entire length of the first inflatable chamber structure 106 and the second inflatable chamber structure 108. However, in other implementations, the first gap 140 can be variable. For example, it can expand or narrow in size as the distance from the center of the first gas distributor increases. The first gap 140 can have, for example, one or more of the following values: in some implementations, between 2 mm and 40 mm; in some implementations, between 4 mm and 36 mm; in some implementations, between 6 mm and 32 mm; in some implementations, between 8 mm and 28 mm; in some implementations, between 10 mm and 24 mm; in some implementations, between 12 mm and 20 mm; and in some implementations, between 14 mm and 16 mm. Such a range of the first gap can be applicable to any of the implementations discussed herein.

[0046] The gas distribution ports shown as being distributed along the length of each pipe fitting are equally spaced from each other in this example. In some implementations, the gas distribution ports can be configured in different ways, such as having a spacing or diameter that gradually increases or decreases as the flow path distance between the gas inlet of the gas inflatable chamber structure and the gas distribution port increases, to adjust the flow rate of the gas from each individual gas distribution port and thus adjust the uniformity of gas distribution across the surface of the semiconductor wafer.

[0047] The first inflatable chamber structure 106 and the second inflatable chamber structure 108 can have various cross-sectional shapes. In some implementations, the first inflatable chamber structure 106 and the second inflatable chamber structure 108 can have a hollow square or square-round (square with rounded corners) shape, such as cross-section 136A. In other implementations, the first inflatable chamber structure 106 and the second inflatable chamber structure 108 can have a circular cross-section such as cross-section 136B or an elliptical cross-section 136C. In other implementations, the first inflatable chamber structure 106 and the second inflatable chamber structure 108 can have a lachrymiform or tear-drop shaped cross-section 136D (in some implementations, it can have the opposite cross-section, where the larger diameter part is arranged upward and the smaller diameter part is arranged downward; the gas distribution ports in this example will be located in the smaller diameter part arranged downward).

[0048] Figure 2 A side cross-sectional view of an exemplary first gas distributor and a second gas distributor according to the present disclosure. In Figure 2 the device, [it is] provided with Figure 1a first gas distributor 202 similar to the first gas distributor; the device also includes a second gas distributor 204 positioned above the first gas distributor 202. The first gas distributor 202 includes a first plenum structure 206 and a second plenum structure 208. The first plenum structure 206 defines a first plenum volume 216 and has a plurality of first gas distribution ports 226 connected thereto, and the plurality of first gas distribution ports 226 are in fluid communication with the first plenum volume 216. Similarly, the second plenum structure 208 defines a second plenum volume 218 and has a plurality of second gas distribution ports 228 connected thereto, and the plurality of second gas distribution ports 228 are in fluid communication with the second plenum volume 218. The first gas distribution ports 226 and the second gas distribution ports 228 are generally configured to cause gas to flow along a first average direction 238 (e.g., downward).

[0049] As Figure 2 shown, the second gas distributor 204 may include (substantially) a panel 276 that defines an isolation gas structure 214, a peripheral sidewall 274, and a backplate 268. The isolation gas structure 214 includes an isolation gas plenum volume 224. The backplate 268 may include an isolation gas inlet 270 through which isolation gas may flow into the isolation gas plenum volume 224 and then out through a plurality of isolation gas ports 234.

[0050] From Figure 2 it can be seen that the first plenum structure 206 is separated from the second plenum structure 208 by a first gap 240, and the exit planes of the first gas distribution ports 226 and the second gas distribution ports 228 are offset from the exit plane of the isolation gas ports 234 by a second gap 242. The isolation gas (dashed arrows) can flow through the isolation gas plenum volume 224, out through the isolation gas ports 234, and through the first gas distributor 202. Due to the circular cross-sectional shape of the first plenum structure 206 and the second plenum structure 208, the isolation gas can flow around them without generating many (if any) turbulent or recirculation flows, thereby reducing the chance of process gas flowing through the first gas distributor 202 depositing on its surface. In some implementations, the second gap 242 may have a value in the range of 6 mm to 30 mm, but other implementations may have other second gap values if desired. Such values are also applicable to other implementations discussed herein.

[0051] Figure 3A side cross-sectional view of an exemplary first gas distributor and a second gas distributor according to the present disclosure. The first gas distributor 302 is similar to the first gas distributor 202, and the discussion of the first gas distributor 202 provided above equally applies to the first gas distributor 302. The second gas distributor 304 has a different design from the second gas distributor 204 and is actually similar to the first gas distributor 302. However, the second gas distributor may have a single inflation chamber volume 324 (instead of two separate inflation chamber volumes), which is defined by the isolation gas inflation chamber structure 314. For example, the isolation gas inflation chamber structure 314 may be substantially the same in appearance as the double-helix first inflation chamber structure 106 and the second inflation chamber structure 108, except that the two inflation chamber structures are fluidly connected at the center, or may be fluidly separated from each other but fed with the same isolation gas from two separate inlets. The isolation gas may flow out through the isolation gas port 334 and flow onto / through the first gas distributor 302.

[0052] It should be understood that although the foregoing example uses a spiral inflation chamber structure for the first gas distributor, any of a variety of inflation chamber structures may be utilized to implement the concepts discussed herein. However, the various inflation chamber structures used must a) be arranged to distribute gas substantially over the wafer surface, and b) generally have a gap maintained between it and any adjacent inflation chamber structure (for providing different types of process gases) when viewed along a first average direction (e.g., along the vertical direction).

[0053] Figure 4 A top partial view of another exemplary first gas distributor according to the present disclosure. Figure 4 The first gas distributor 402 has two arcuate, comb-shaped inflation chamber structures: a first inflation chamber structure 406 and a second inflation chamber structure 408, each of which includes arcuate channels that distribute gas from a first gas inlet 462 and a second gas inlet 464, respectively, to "finger" channels that are staggered with each other and each include a first gas distribution port 426 and a second gas distribution port 428. The arcuate channels and the finger channels of the first inflation chamber structure 406 provide a first inflation chamber volume 416, while the arcuate channels and the finger channels of the second inflation chamber structure 408 provide a second inflation chamber volume 418. It can be seen that a first gap 440 is maintained between the first inflation chamber structure 406 and the second inflation chamber structure 408, however, the first gap 440 varies in size at many locations (e.g., near the tips of each "finger").

[0054] Figure 5 is similar to the Figure 4 An isometric view of an exemplary first gas distributor similar to the first gas distributor shown. In Figure 5In this case, like the first gas distributor 402, the first gas distributor 502 includes a first plenum structure 506 and a second plenum structure 508, which are each supplied with gas via respective first gas inlets 562 and second gas inlets 564. Relative to the helical tube implementation discussed above, Figure 5 The implementation can be achieved, for example, by machining each plenum structure separately (e.g., machining into an upper half and a lower half such that the internal plenum volume can be machined; the two halves can then be brazed or otherwise treated to join them together into a single piece of each plenum structure). Such a structure would be stiffer and more stable due to its potentially thicker wall thickness and shorter cantilever length. In some implementations, such plenum structures can be fabricated additively (e.g., using direct laser metal sintering or a similar process) to fabricate each plenum structure as a single monolithic component. Obviously, the gas distributors discussed herein can be made by any of a variety of different machining or manufacturing processes.

[0055] Figure 6 To be similar to Figure 5 An isometric view of another exemplary monolithic first gas distributor similar to the first gas distributor shown but in a monolithic structure. Figure 7 For Figure 6 An isometric partial cross-sectional view of the exemplary monolithic first gas distributor. In Figure 6 and 7 The only difference from Figure 5 is that the first gas distributor 502' includes a plurality of structural supports 560 that span between the two plenum structures, forming a single, connected first gas distributor 502'. It should be understood that even though the first gas distributor 502 is a single connected component, the first plenum structure 506 and the second plenum structure 508 are still separated along their entire lengths by a first gap 540. The structural supports 560 should be understood not to be considered part of either plenum structure (even though connected thereto), but rather as a link or connection structure that bridges between the two plenum structures.

[0056] Figure 8 A top partial view of another exemplary first gas distributor according to the present disclosure. Figure 8 The first gas distributor 802 shown in Figure 1is substantially the same as that shown, but includes two additional plenum chamber structures. Thus, the first gas distributor 802 includes a first plenum chamber structure 806, a second plenum chamber structure 808, a third plenum chamber structure 810, and a fourth plenum chamber structure 812, which respectively define a first plenum chamber volume 816, a second plenum chamber volume 818, a third plenum chamber volume 820, and a fourth plenum chamber volume 822. Each plenum chamber volume is supplied with a process gas via a corresponding gas inlet and distributes the process gas onto a semiconductor wafer (the area it substantially covers is indicated by the dashed boundary 482) via a plurality of gas distribution ports. Thus, for example, the first plenum chamber volume 816 is supplied with a first process gas via the first gas inlet 862 and then distributes the first process gas via the first gas distribution port 826, the second plenum chamber volume 818 is supplied with a second process gas via the second gas inlet 864 and then distributes the second process gas via the second gas distribution port 828, the third plenum chamber volume 820 is supplied with a third process gas via the third gas inlet 866 and then distributes the third process gas via the third gas distribution port 830, and the fourth plenum chamber volume 822 is supplied with a fourth process gas via the fourth gas inlet 868 and then distributes the fourth process gas via the fourth gas distribution port 832.

[0057] In the first gas distributor 802, the respective plenum chamber structures are supported relative to one another by a structural support member 860, which can be welded, brazed, or otherwise connected to the respective plenum chamber structures, thereby providing stiffness and support for the combined first gas distributor 802 while disturbing (if at all) the downward flow of the isolation gas from a second gas distributor (not shown), which is positioned above the first gas distributor 802. The isolation gas from the second gas distributor can flow between the plenum chamber structures through a first gap 840 that exists between each adjacent pair of plenum chamber structures, thus providing a continuous curtain of isolation gas between the plenum chamber structures. These curtains of isolation gas can generally "wall off" the respective plenum chamber structures from the gas flowing out of adjacent plenum chamber structures, thereby avoiding such gas mixing and forming undesired deposition products on the lower sides of the plenum chamber structures. The isolation gas flow can also be used to reduce or avoid the backflow of the process gas flowing out of the respective plenum chamber structures, thereby avoiding or mitigating the adsorption of these process gases on the lower sides of the plenum chamber structures in the first place.

[0058] Figure 9 A side view of an exemplary gas distribution system incorporating the concepts discussed in this disclosure. Figure 10 is Figure 9 a bottom view of the exemplary gas distribution system of Figure 11 is Figure 9 a perspective partial cross-sectional view of the exemplary gas distribution system of

[0059] As Figure 9 can be seen in FIG. Figure 9 , a device 900 is provided that includes a first gas distributor 902 and a second gas distributor 904. The first gas distributor 902 includes a first plenum structure 906 that is provided with a first process gas via a pipe fitting, where the pipe fitting has a first lift section 952 and a first radial section 956 that are fluidly connected to a first gas inlet 962. Similarly, the first gas distributor 902 includes a second plenum structure 908 that is provided with a second process gas via a pipe fitting, where the pipe fitting has a second lift section 954 and a second radial section 958 that are fluidly connected to a second gas inlet 964. The process gases flowing into the first plenum structure 906 and the second plenum structure 908 can flow out of these respective plenum structures through corresponding first gas distribution ports 926 and second gas distribution ports 928, respectively. When viewed along a first average direction 938 (e.g., downward), the first plenum structure 906 and the second plenum structure 908 can be spaced apart from each other via a first gap 940. The first average direction 938 can be defined, for example, by the average flow direction of the gas exiting the first gas distributor, or more generally can be defined as being substantially vertical.

[0060] The first plenum structure 906 and the second plenum structure 908 can be selectively supported relative to each other by structural supports 960, which can be, for example, thin (e.g., 0.1” ± 0.05”) metal strips that are welded or brazed to the plenum structures. In helical plenum structures (such as those depicted), these structural supports 960 can provide additional stiffness that can counteract sagging and bending in the helical tube structure (since the helical tube is effectively a cantilever beam with a length equal to the helical length and thus can experience significant flexure unless intermediate supports, such as structural supports 960, are provided).

[0061] The second plenum structure 908 can be, for example, a showerhead having a faceplate with a plurality of purge gas ports 934. The second plenum structure can be supported by support posts 996, which also serve as conduits for conducting purge gas from a purge gas inlet 970 to a purge gas plenum inside the second gas distributor 904 such that the purge gas can then flow out through the purge gas ports 934.

[0062] In the illustrated implementation, the support post 996 is a separate component from the collar 992. The support post 996 provides a flow path to connect the first gas inlet 962 and the second gas inlet 964 to the respective first radial section 956 and second radial section 958. This enables the second gas distributor 904 to move vertically up or down relative to the first gas distributor 902, thereby increasing or decreasing the second gap 942 that exists between the exit planes of the first gas distribution port 926 and the second gas distribution port 928 and the exit plane of the isolation gas port 934. A seal 994 can be provided to enable the formation of an airtight sliding interface between the support post 996 and the collar 992.

[0063] Figure 12 Side view of an exemplary gas distribution system for Figure 9 where the second gas distributor is in the raised state. Figure 13 Side view of an exemplary gas distribution system for Figure 9 where the second gas distributor is in the lowered state. As discussed above, the implementation of Figure 9-11 can be adjusted to lower or raise the second gas distributor 904 relative to the first gas distributor 902. In other implementations, the first gas distributor 902 can be movable while the second gas distributor 904 can be fixed to provide such adjustment, or both the first gas distributor 902 and the second gas distributor 904 can be vertically movable. In some other implementations, the second gap 942 can be non-adjustable, e.g., the second gap 942 can be fixed in size.

[0064] Thus, for example, the second gap 942 can be adjusted from the Figure 12 near-maximum second gap 942 shown to the Figure 13 near-minimum second gap 942' (where the maximum and minimum values are evaluated based on the illustrated configuration: other implementations may have other maximum and minimum values).

[0065] The devices discussed in this application can be part of a larger device or system (e.g., a semiconductor processing chamber). In some implementations, several examples of the device implementations discussed herein can be used in a larger device or system, such as a semiconductor processing tool having multiple such semiconductor processing chambers, each semiconductor processing chamber having its own first and second gas distributors as described herein.

[0066] Figure 14 Side view of an exemplary gas distribution system for Figure 9 installed in a semiconductor processing chamber. In Figure 14In [the figure], a collar 992 is installed in a semiconductor processing chamber 978, which enables a first gas distributor 902 and a second gas distributor 904 to be suspended within the semiconductor processing chamber 978, above a wafer support or pedestal 980, which can be used to support a semiconductor wafer or other substrate 982 below the first gas distributor 902. When fully installed, a first gas inlet 962 can be in fluid connection with a first process gas source 986, a second gas inlet 964 can be in fluid connection with a second process gas source 988, and an isolation gas inlet 970 can be in fluid connection with an isolation gas source 984. The flow paths from the respective gas sources to their corresponding inlets can be controlled by one or more valves so that the flow of gas into each plenum can be controlled individually.

[0067] In some implementations, a controller can be included, which can be part of the above examples. In addition to the first and second gas distributors discussed herein, such systems can also include semiconductor processing equipment, which includes one or more processing tools, one or more chambers, one or more platforms for processing, and / or specific processing components (wafer pedestals, gas flow systems, etc.). These systems can be integrated with electronics for controlling their operation before, during, and after the processing of semiconductor wafers or substrates. The electronics can be referred to as a "controller", which can control various components or sub-components of one or more systems. Depending on the processing requirements and / or system type, the controller can be programmed to control any of the processes disclosed herein, including the delivery of process gases, temperature settings (e.g., heating and / or cooling), pressure settings, vacuum settings, power settings, radio frequency (RF) generator settings, RF matching circuit settings, frequency settings, flow rate settings, fluid delivery settings, position and operation settings, wafer transfer in and out of tools and other transfer tools, and / or load locks connected or interfaced with a particular system.

[0068] Broadly speaking, a controller can be defined as an electronic device having various integrated circuits, logic, memory, and / or software for receiving instructions, issuing instructions, controlling operations, enabling cleaning operations, enabling endpoint measurements, etc. The integrated circuits can include a chip in the form of firmware storing program instructions, a digital signal processor (DSP), a chip defined as an application specific integrated circuit (ASIC), and / or one or more microprocessors, or a microcontroller that executes program instructions (e.g., software). The program instructions can be instructions sent to the controller in the form of various individual settings (or program files), and the individual settings (or program files) define the operating parameters for performing a specific process on or for a semiconductor wafer or system. In some embodiments, the operating parameters can be part of a recipe defined by a process engineer to complete one or more processing steps during the fabrication of one or more layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and / or die of a wafer.

[0069] For example, in some implementations, the configurable controller can be operated to control a computer-operable valve (e.g., along Figure 14a valve positioned along the flow path shown) to control the flow of gas from the various gas sources described above. For example, the controller may cause the isolation gas from the isolation gas source 984 to begin flowing through the isolation gas plenum volume for a predetermined time before causing the first process gas from the first process gas source 986 or the second process gas from the second process gas source 988 to begin flowing through their respective plenum volumes, thereby establishing a steady flow in the form of an isolation gas curtain flowing through the first gap between the first plenum structure 906 and the second plenum structure 908. After achieving such steady flow, the controller may control the valves controlling the first process gas flow and the second process gas flow such that the first process gas and the second process gas are alternately delivered to their respective plenum volumes. For example, the controller may cause the valve controlling the first process gas flow to be in an open state for a predetermined time (e.g., a few hundredths of a second to possibly several seconds), while causing a similar valve controlling the second process gas flow to be in a closed state during the same time period. The controller may then cause the valve controlling the first process gas flow to be in a closed state, thereby stopping the flow of the first process gas into the corresponding plenum volume. In some implementations, the controller may then cause both the valves controlling the first process gas and the second process gas to remain in a closed state for another predetermined time period to allow the isolation gas to isolate any space of the first process gas remaining above the wafer. The controller may then cause the valve controlling the second process gas flow to be in an open state for a second time period, while causing the valve controlling the first process gas flow to be in or remain in a closed state. After the second process gas has been delivered for the second time period, in some implementations, the controller may then cause the valves for both the first process gas and the second process gas to be in a closed state, while keeping the isolation gas valve open, thereby purging any space of the second process gas remaining above the wafer. This cycle may be repeated multiple times until the semiconductor processing operation is complete.

[0070] In some implementations, the controller can be part of or coupled to a computer that is integrated with, coupled to, otherwise networked to, or a combination of the system. For example, the controller can be in the "cloud" or be all or part of a wafer fab host system, which can allow remote access to wafer processing. The computer can implement remote access to the system to monitor the current progress of manufacturing operations, examine the history of past manufacturing operations, examine trends or performance criteria of multiple manufacturing operations, change parameters of the current process, set process steps to follow the current process, or initiate a new process. In some examples, a remote computer (e.g., a server) can provide a process recipe to the system via a network, which can include a local network or the Internet. The remote computer can include a user interface that enables the input or programming of parameters and / or settings, which are then sent from the remote computer to the system. In some examples, the controller receives instructions in the form of data that specify parameters for each process step to be executed during one or more operations. It should be understood that the parameters can be specific to the type of process to be executed and the type of tool, and the controller is configured to interface with or control the tool. Thus, as described above, the controller can be distributed, for example, by including one or more discrete controllers that are networked together and work towards a common purpose (e.g., the processes and controls described herein). An example of a distributed controller for such purposes is one or more integrated circuits on a chamber that communicate with one or more integrated circuits remote (e.g., at the platform level or as part of a remote computer), which combine to control the process on the chamber.

[0071] Example systems can include, but are not limited to, plasma etch chambers or modules, deposition chambers or modules, spin rinse chambers or modules, metal plating chambers or modules, cleaning chambers or modules, bevel edge etch chambers or modules, physical vapor deposition (PVD) chambers or modules, chemical vapor deposition (CVD) chambers or modules, atomic layer deposition (ALD) chambers or modules, atomic layer etch (ALE) chambers or modules, ion implantation chambers or modules, track chambers or modules, and any other semiconductor processing system that can be associated with or used for the manufacture and / or preparation of semiconductor wafers.

[0072] As described above, depending on one or more process steps to be performed by the tool, the controller can communicate with one or more other tool circuits or modules, other tool components, cluster tools, other tool interfaces, adjacent tools, neighboring tools, tools located throughout the factory, a host computer, another controller, or tools used in the material transport that shuttles wafer containers to and from tool locations and / or load ports in a semiconductor manufacturing facility.

[0073] It should be understood that, unless further qualified, the term "group" refers to one or more items grouped together, which does not require the presence of multiple items, unless there is further language indicating the presence of multiple items. For example, "two or more items grouped together" would be understood to mean that there are at least two items. In contrast, "one or more items grouped together" would be understood to mean that there may be only one item. Similarly, it should be understood that the term "each" may be used herein to refer to each member of a group, even if the group contains only one member. The term "each" may also be used in the same manner with an implied group, such as a case where the term "group" is not used but other language implies the presence of a group. For example, "each item in one or more items" should be understood to be equivalent to "each item in a group of one or more items".

[0074] It should be understood that although the foregoing disclosure focuses on one or more particular exemplary implementations, it is not limited to the examples discussed, but may also be applied to similar variations and mechanisms, and such similar variations and mechanisms are also considered to fall within the scope of this disclosure.

Claims

1. A device, comprising: A first inflatable chamber structure, comprising: A first arcuate portion; and A plurality of first finger channels extending from the first arcuate portion in a first direction; and a second inflatable chamber structure, comprising: A second arcuate portion; and A plurality of second finger channels extending from the second arcuate portion in a second direction opposite to the first direction, Wherein the first and second finger channels are interleaved with each other.

2. The device according to claim 1, wherein adjacent first and second finger channels are spaced apart from each other in a third direction perpendicular to the first direction.

3. The device according to claim 1, wherein the distance between adjacent first and second finger channels is between 2 mm and 40 mm.

4. The device according to claim 1, wherein the first finger channels and the second finger channels extend along the same plane.

5. The device according to claim 1, wherein the first inflatable chamber structure is fluidly isolated from the second inflatable chamber structure.

6. The device according to claim 1 or 5, wherein the first and second inflatable chamber structures at least form part of a gas distributor.

7. The device according to claim 1, further comprising: A first inlet fluidly connected to the first arcuate portion; And / or A second inlet fluidly connected to the second arcuate portion.

8. The device according to claim 7, wherein: Adjacent first and second finger channels are spaced apart from each other in a third direction perpendicular to the first direction; And (i) The first inlet extends from the first arcuate portion in a direction perpendicular to a first plane defined by the first and third directions, and / or (ii) The second inlet extends from the second arcuate portion in a direction perpendicular to the first plane.

9. The device according to claim 7, wherein: The first inlet is fluidly connected to a first gas source configured to provide at least one first process gas; and The second inlet is fluidly connected to a second gas source configured to provide at least one second process gas, the at least one second process gas being different from the at least one first process gas.

10. The device according to claim 1, wherein two or more of the first finger channels and two or more of the second finger channels are located within a substantially circular boundary.

11. The device according to claim 1, wherein: At least one of the first finger channels extends from an end of the first arcuate portion; And / or At least one of the second finger channels extends from an end of the second arcuate portion.

12. The device according to claim 1, wherein: At least one of the first finger channels extends from a central portion of the first arcuate portion; And / or At least one of the second finger channels extends from a central portion of the second arcuate portion.

13. The device according to claim 1, wherein: At least one of the first finger channels is longer than at least another of the first finger channels; And / or At least one of the second finger channels is longer than at least another one of the second finger channels.

14. The apparatus according to claim 1, wherein: At least one of the first finger channels is disposed between the other two of the first finger channels, and is longer than one of the other two of the first finger channels and shorter than the other one of the other two of the first finger channels; and / or At least one of the second finger channels is disposed between the other two of the second finger channels, and is longer than one of the other two of the second finger channels and shorter than the other one of the other two of the second finger channels; and / or.

15. The apparatus according to claim 1, wherein: One of the first finger channels is disposed between the other two of the first finger channels, and is longer than the other two of the first finger channels; and One of the second finger channels is disposed between the other two of the second finger channels, and is longer than the other two of the second finger channels.

16. The apparatus according to claim 15, wherein the one of the first finger channels and the one of the second finger channels are disposed directly adjacent to each other.

17. The apparatus according to claim 16, wherein: The length of the first finger channels decreases from the one of the first finger channels toward the other two of the first finger channels; and The length of the second finger channels decreases from the one of the second finger channels toward the other two of the second finger channels.

18. The apparatus according to claim 2, wherein: Each first finger channel has a substantially rectangular cross-sectional shape in a second plane defined by the first direction and a fourth direction perpendicular to a first plane defined by the first and third directions; and / or Each second finger channel has a substantially rectangular cross-sectional shape in the second plane.

19. The apparatus according to claim 1, further comprising a plurality of spacer structures, each spacer structure being located between adjacent first and second finger channels.

20. The apparatus according to claim 19, wherein each spacer structure comprises a metallic material.

21. The apparatus according to claim 19, wherein: Each first finger channel includes a plurality of first gas ports and each second finger channel includes a plurality of second gas ports; The first and second finger channels respectively include upper surfaces; and In a fourth direction transverse to the first, second and third directions, corresponding openings of the first and second gas ports are arranged to be further away from the upper surface than the spacer structures.

22. The apparatus according to claim 1, wherein each first finger channel includes at least one first gas port and / or each second finger channel includes at least one second gas port.

23. The apparatus according to claim 22, wherein the at least one first gas port and / or the at least one second gas port includes a hole.

24. The apparatus according to claim 1, wherein: The first finger channels each include a first proximal end connected to the first arcuate portion and a first distal end spaced from the second arcuate portion, such that when viewed along an axis perpendicular to the first and second directions, the first distal ends respectively terminate along a first arcuate boundary embedded from the second arcuate portion; and The second finger channels each include a second proximal end connected to the second arcuate portion and a second distal end spaced from the first arcuate portion, such that when viewed along an axis perpendicular to the first and second directions, the second distal ends respectively terminate along a second arcuate boundary embedded from the first arcuate portion.

25. The apparatus according to claim 24, wherein: At least one of the first distal ends is disposed closer to the second arcuate portion than at least another of the first distal ends; and At least one of the second distal ends is disposed closer to the first arcuate portion than at least another of the second distal ends.

26. The apparatus according to claim 1, further comprising a semiconductor processing chamber, the processing chamber including a wafer support configured to support a wafer during operation.

27. The apparatus according to claim 26, wherein: The plurality of first finger channels include a plurality of first gas ports; and The plurality of second finger channels include a plurality of second gas ports.

28. The apparatus according to claim 27, wherein: (i) The first and second plenum structures are configured such that at least one of the first gas ports and at least one of the second gas ports face the wafer support; and / or (ii) The first arcuate boundary embedded from the first arcuate portion and the second arcuate boundary embedded from the second arcuate portion enclose a region corresponding to a coverage area of the wafer supported by the wafer support during operation.

29. The apparatus according to claim 27, wherein: The first arcuate boundary embedded from the first arcuate portion and the second arcuate boundary embedded from the second arcuate portion enclose a region corresponding to a coverage area of the wafer supported by the wafer support during operation; and When viewed along an axis perpendicular to the first and second directions, the first gas ports and the second gas ports are arranged such that: Groups of the first gas ports and the second gas ports are located within the region; and The remaining groups of the first gas ports and the second gas ports are arranged along the boundary of the region.

30. The apparatus according to claim 1, further comprising: A first gas source in fluid communication with the first plenum structure, configured to provide at least one first process gas to the first plenum structure; and A second gas source in fluid communication with the second plenum structure, configured to provide at least one second process gas to the second plenum structure, the at least one second process gas being different from the at least one first process gas.

31. An apparatus, comprising: A gas distribution system, comprising: An isolation gas distributor, comprising an isolation gas charging chamber volume and a plurality of isolation gas ports in fluid communication with the isolation gas charging chamber volume; and A process gas distributor, the process gas distributor comprising a plurality of process gas charging chamber structures, each process gas charging chamber structure comprising a corresponding process gas charging chamber volume in fluid communication with a corresponding plurality of gas distribution ports, wherein: The isolation gas distributor is located above the process gas distributor, and When viewed along a vertical axis, there are gaps between the process gas charging chamber structures.

32. The apparatus according to claim 31, wherein the process gas distributor is configured such that when the isolation gas flows out of the isolation gas ports during operation, at least a portion of the isolation gas flows through one or more of the gaps between the process gas charging chamber structures.

33. The apparatus according to claim 31, wherein each of the gaps is at least 2 mm.

34. The apparatus according to claim 31, wherein each of the gaps is between 2 mm and 40 mm.

35. The apparatus according to claim 31, further comprising one or more supports between at least one set of adjacent process gas charging chamber structures among the plurality of process gas charging chamber structures.

36. The apparatus according to claim 31, wherein each process gas charging chamber structure is spiral or comb-shaped when viewed along a vertical axis.

37. The apparatus according to claim 31, wherein each process gas charging chamber structure comprises one or more finger channels extending from a distribution channel.

38. The apparatus according to claim 31, wherein the finger channels of adjacent gas charging chamber structures among the plurality of process gas charging chamber structures are staggered with each other.

39. The apparatus according to claim 31, wherein each process gas charging chamber structure has a cross-sectional shape selected from the group consisting of: a circular cross-sectional shape, an oblong cross-sectional shape, an elliptical cross-sectional shape, and a teardrop cross-sectional shape.

40. The apparatus according to claim 31, wherein: The isolation gas distributor has a back plate, side walls, and a panel that define the isolation gas charging chamber volume, The side walls are between the back plate and the panel, and The isolation gas ports include a plurality of holes passing through the panel.

41. The apparatus according to claim 31, wherein at least one of the gaps has a distance that varies in a direction extending along the adjacent process gas charging chamber structures between the adjacent process gas charging chamber structures.

42. The apparatus according to claim 31, wherein the corresponding gas distribution ports of each process gas charging chamber structure are arranged in a direction extending along the process gas charging chamber structure.

43. The apparatus according to claim 31, wherein: Each process gas charging chamber structure includes a corresponding gas inlet; and The corresponding gas distribution ports of each process gas charging chamber structure (i) are spaced apart from each other by a distance that decreases according to the distance from the corresponding gas inlet and / or (2) are sized to increase according to the distance from the corresponding gas inlet.

44. The apparatus according to claim 31, wherein each process gas charging chamber volume of the process gas distributor is fluidly connected to a corresponding gas inlet and is positioned such that the isolation gas distributor is interposed between the corresponding gas inlet and the process gas distributor.

45. The apparatus according to claim 31, wherein the process gas distributor and the isolation gas distributor are configured to translate relative to each other along the vertical axis.

46. The apparatus according to claim 31, wherein the process gas charging chamber structures are arranged in an equispaced radial array about a central axis.

47. The apparatus according to claim 31, further comprising: a semiconductor processing chamber; and a wafer support within the semiconductor processing chamber, wherein the process gas distributor and the isolation gas distributor are within the semiconductor processing chamber and above the wafer support.

48. The apparatus according to claim 31, further comprising one or more additional gas distribution systems.

49. A method comprising: (i) flowing one or more process gases from a process gas distributor, the process gas distributor including a plurality of process gas charging chamber structures, each process gas charging chamber structure including a corresponding process gas charging chamber volume fluidly connected to a corresponding plurality of gas distribution ports; and (ii) flowing an isolation gas from an isolation gas distributor when the one or more process gases flow from the process gas distributor, the isolation gas distributor including an isolation gas charging chamber volume and a plurality of isolation gas ports fluidly communicating with the isolation gas charging chamber volume, wherein at least a portion of the isolation gas flowing from the isolation gas ports passes through one or more gaps between the process gas charging chamber structures.

50. The method according to claim 49, wherein (i) includes flowing a first process gas from a first set of the plurality of gas distribution ports and flowing a second process gas from a second set of the plurality of gas distribution ports, wherein the first process gas and the second process gas are reactive with each other.

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