Chemical mechanical polishing slurry composition for polishing tungsten and method for polishing tungsten using same

Abstract

A chemical mechanical polishing slurry composition for polishing tungsten and a method of polishing tungsten using the same, the composition comprising: a solvent comprising a polar solvent or a non-polar solvent; an abrasive; and a corrosion inhibitor, where the corrosion inhibitor includes a polyaminosilane having a weight average molecular weight of 500 g / mol to 5,000 g / mol or a salt of the polyaminosilane.

Description

[0001] Cross - reference to related applications

[0002] This application claims priority and the benefit of Korean Patent Application No. 10 - 2024 - 0002027, filed on January 5, 2024, with the Korean Intellectual Property Office, the entire disclosure of which is incorporated herein by reference. Technical field

[0003] Each embodiment relates to a chemical - mechanical polishing slurry composition for polishing tungsten and a method for polishing tungsten using the chemical - mechanical polishing slurry composition. Background art

[0004] Chemical - mechanical polishing (CMP) compositions and methods for polishing (or planarizing) the surface of a substrate have been considered. A polishing composition for polishing a metal layer (e.g., tungsten) on a semiconductor substrate may include abrasive particles suspended in an aqueous solution and chemical promoters (e.g., oxidants, catalysts, etc.).

[0005] The process of polishing a metal layer using a CMP composition may include steps of polishing an initial metal layer, polishing a metal layer and a barrier layer, and polishing a metal layer, a barrier layer, and an oxide film. Summary of the invention

[0006] The embodiments may be achieved by providing a chemical - mechanical polishing (CMP) slurry composition for polishing tungsten, the composition comprising: a solvent, the solvent including a polar solvent or a non - polar solvent; an abrasive; and a corrosion inhibitor, wherein the corrosion inhibitor comprises a polyaminosilane or a salt of a polyaminosilane having a weight - average molecular weight of 500 g / mol to 5,000 g / mol.

[0007] The polyaminosilane may include silicon - bonded hydroxyl groups ( -Si - OH), siloxane groups ( -O - Si - O - ), or free amino groups.

[0008] The polyaminosilane may include a polymerization product of an aminosilane.

[0009] The aminosilane may include a compound represented by Formula 1,

[0010] [Formula 1]

[0011]

[0012] X1, X2, and X3 can each independently be hydrogen, a hydroxyl group, a halogen, a substituted or unsubstituted C1 to C 20 alkyl group, a substituted or unsubstituted C6 to C 20 aryl group, a substituted or unsubstituted C3 to C 20 cycloalkyl group, a substituted or unsubstituted C7 to C 20 arylalkyl group, a substituted or unsubstituted C1 to C 20 alkoxy group, or a substituted or unsubstituted C6 to C 20 aryloxy group. At least one of X1, X2, and X3 can be a hydroxyl group, a substituted or unsubstituted C1 to C 20 alkoxy group, or a substituted or unsubstituted C6 to C 20 aryloxy group. Y1 can be a divalent aliphatic hydrocarbon group, a divalent cycloaliphatic hydrocarbon group, or a divalent aromatic hydrocarbon group, and R1 and R2 can each independently be hydrogen, a hydroxyl group, a substituted or unsubstituted C1 to C 20 monovalent aliphatic hydrocarbon group, a substituted or unsubstituted C3 to C 20 monovalent cycloaliphatic hydrocarbon group, a substituted or unsubstituted C6 to C 30 monovalent aromatic group, a functional group represented by Formula 2, or a functional group represented by Formula 3,

[0013] [Formula 2]

[0014]

[0015] is the bonding site to the nitrogen of Formula 1. Y2 can be a divalent aliphatic hydrocarbon group, a divalent cycloaliphatic hydrocarbon group, or a divalent aromatic hydrocarbon group, and R3 and R4 can each independently be hydrogen, a hydroxyl group, a substituted or unsubstituted C1 to C 20 monovalent aliphatic hydrocarbon group, a substituted or unsubstituted C3 to C 20 monovalent cycloaliphatic hydrocarbon group, or a substituted or unsubstituted C6 to C 30 monovalent aromatic group,

[0016] [Formula 3]

[0017]

[0018] is the bonding site to the nitrogen of Formula 1. Y3 and Y4 can each independently be a divalent aliphatic hydrocarbon group, a divalent cycloaliphatic hydrocarbon group, or a divalent aromatic hydrocarbon group, and R5, R6, and R7 can each independently be hydrogen, a hydroxyl group, a substituted or unsubstituted C1 to C 20 monovalent aliphatic hydrocarbon group, a substituted or unsubstituted C3 to C 20 monovalent cycloaliphatic hydrocarbon group, or a substituted or unsubstituted C6 to C 30 monovalent aromatic group.

[0019] The amino silane may include aminopropyltriethoxysilane, aminopropyltrimethoxysilane, aminoethylaminopropyltrimethoxysilane, aminoethylaminopropyltriethoxysilane, aminoethylaminopropylmethyldimethoxysilane, aminoethylaminopropylmethyldiethoxysilane, aminoethylaminomethyltriethoxysilane, aminoethylaminomethylmethyldiethoxysilane, diethylenetriaminopropyltrimethoxysilane, diethylenetriaminopropyltriethoxysilane, diethylenetriaminopropylmethyldimethoxysilane, diethylenetriaminopropylmethyldiethoxysilane, or diethylenetriaminomethylmethyldiethoxysilane.

[0020] Based on the total weight of the CMP slurry composition, the polyamino silane or the salt of the polyamino silane having a weight average molecular weight of 500 g / mol to 5,000 g / mol may be present in an amount of 0.001 wt% to 10 wt%.

[0021] The corrosion inhibitor may further include an additional corrosion inhibitor different from the polyamino silane or the salt of the polyamino silane having a weight average molecular weight of 500 g / mol to 5,000 g / mol.

[0022] The additional corrosion inhibitor may include an amino acid or an amine compound.

[0023] The abrasive may include an unmodified abrasive or a modified abrasive.

[0024] The abrasive may include a modified abrasive, and the modified abrasive may include silica modified with an amino silane or a salt of the amino silane.

[0025] The CMP slurry composition may further include an oxidizing agent, a catalyst, or an organic acid.

[0026] Based on the total weight of the CMP slurry composition, the CMP slurry composition may include: 0.001 wt% to 20 wt% of an abrasive, 0.001 wt% to 10 wt% of a corrosion inhibitor, 0.01 wt% to 20 wt% of an oxidizing agent, 0.001 wt% to 10 wt% of a catalyst, 0.001 wt% to 20 wt% of an organic acid, and a solvent.

[0027] Each embodiment may be achieved by providing a method for polishing tungsten, the method including: polishing tungsten using the CMP slurry composition for polishing tungsten according to the embodiment.

[0028] The polyamino silane may include a silicon-bonded hydroxyl group ( -Si-OH), a siloxanyl group ( -O-Si-O- ), or a free amino group.

[0029] The polyaminosilane may include a polymerization product of an aminosilane.

[0030] The aminosilane may contain a compound represented by Formula 1,

[0031] [Formula 1]

[0032]

[0033] X1, X2, and X3 may each independently be hydrogen, a hydroxyl group, a halogen, a substituted or unsubstituted C1 to C 20 alkyl group, a substituted or unsubstituted C6 to C 20 aryl group, a substituted or unsubstituted C3 to C 20 cycloalkyl group, a substituted or unsubstituted C7 to C 20 arylalkyl group, a substituted or unsubstituted C1 to C 20 alkoxy group, or a substituted or unsubstituted C6 to C 20 aryloxy group. At least one of X1, X2, and X3 may be a hydroxyl group, a substituted or unsubstituted C1 to C 20 alkoxy group, or a substituted or unsubstituted C6 to C 20 aryloxy group. Y1 may be a divalent aliphatic hydrocarbon group, a divalent alicyclic hydrocarbon group, or a divalent aromatic hydrocarbon group, and R1 and R2 may each independently be hydrogen, a hydroxyl group, a substituted or unsubstituted C1 to C 20 monovalent aliphatic hydrocarbon group, a substituted or unsubstituted C3 to C 20 monovalent alicyclic hydrocarbon group, a substituted or unsubstituted C6 to C 30 monovalent aromatic group, a functional group represented by Formula 2, or a functional group represented by Formula 3,

[0034] [Formula 2]

[0035]

[0036] is a connection site to the nitrogen of Formula 1. Y2 may be a divalent aliphatic hydrocarbon group, a divalent alicyclic hydrocarbon group, or a divalent aromatic hydrocarbon group, and R3 and R4 may each independently be hydrogen, a hydroxyl group, a substituted or unsubstituted C1 to C 20 monovalent aliphatic hydrocarbon group, a substituted or unsubstituted C3 to C 20 monovalent alicyclic hydrocarbon group, or a substituted or unsubstituted C6 to C 30 monovalent aromatic hydrocarbon group,

[0037] [Formula 3]

[0038]

[0039] For the nitrogen linkage site of Formula 1, Y3 and Y4 can each independently be a divalent aliphatic hydrocarbon group, a divalent alicyclic hydrocarbon group, or a divalent aromatic hydrocarbon group, and R5, R6, and R7 can each independently be hydrogen, a hydroxyl group, a substituted or unsubstituted C1 to C 20 monovalent aliphatic hydrocarbon group, a substituted or unsubstituted C3 to C 20 monovalent alicyclic hydrocarbon group, or a substituted or unsubstituted C6 to C 30 monovalent aromatic hydrocarbon group.

[0040] The aminosilane can include aminopropyltriethoxysilane, aminopropyltrimethoxysilane, aminoethylaminopropyltrimethoxysilane, aminoethylaminopropyltriethoxysilane, aminoethylaminopropylmethyldimethoxysilane, aminoethylaminopropylmethyldiethoxysilane, aminoethylaminomethyltriethoxysilane, aminoethylaminomethylmethyldiethoxysilane, diethylenetriaminopropyltrimethoxysilane, diethylenetriaminopropyltriethoxysilane, diethylenetriaminopropylmethyldimethoxysilane, diethylenetriaminopropylmethyldiethoxysilane, or diethylenetriaminomethylmethyldiethoxysilane.

[0041] The corrosion inhibitor can further contain an additional corrosion inhibitor different from the polyaminosilane having a weight average molecular weight of 500 g / mol to 5,000 g / mol or the salt of the polyaminosilane.

[0042] The composition can further contain an oxidizing agent, a catalyst, or an organic acid.

[0043] Based on the total weight of the CMP slurry composition, the CMP slurry composition can contain: 0.001 wt% to 20 wt% of an abrasive, 0.001 wt% to 10 wt% of a corrosion inhibitor, 0.01 wt% to 20 wt% of an oxidizing agent, 0.001 wt% to 10 wt% of a catalyst, 0.001 wt% to 20 wt% of an organic acid, and a solvent. Detailed Description

[0044] It should be understood that when a layer or element is referred to as being "on" another layer or element, the layer or element can be directly on the other layer or element, or there can also be an intermediate layer. In addition, it should be understood that when a layer is referred to as being "between" two layers, the layer can be the only layer between the two layers, or there can also be one or more intermediate layers. The term "or" used herein is not necessarily an exclusive term. For example, "A or B" will include A, B, or A and B.

[0045] In the following, various embodiments will be described in detail so that those skilled in the art can implement the embodiments. It should be understood that the embodiments can be implemented in different ways and are not limited to the following embodiments.

[0046] The terms used herein are for the purpose of describing exemplary embodiments and are not intended to limit the present application. The singular forms "a" and "an" and "the" used herein are also intended to include the plural forms unless the context clearly dictates otherwise.

[0047] The "weight average molecular weight" described herein can be obtained based on the polystyrene conversion in gel permeation chromatography (GPC) or by referring to the product catalog. For example, the weight average molecular weight can be determined under the following conditions:

[0048] Analyzer: HLC-8120GPC (Tosoh Chemical Co., Ltd.)

[0049] Column: G7000HXL + GMHXL + GMHXL (Tosoh Chemical Co., Ltd.)

[0050] Column size: 7.8 mmφ × 30 cm each, total 90 cm

[0051] Column temperature: 40 °C

[0052] Flow rate: 0.8 mL / min

[0053] Injection volume: 100 μL

[0054] Eluent: Tetrahydrofuran

[0055] Detector: Differential refractometer (RI)

[0056] Reference sample: Polystyrene

[0057] The term "substituted or unsubstituted" used herein, the term "substituted" means that at least one hydrogen atom in the corresponding functional group is replaced by a hydroxyl group, a halogen, a C1 to C 20 alkyl or haloalkyl, a C2 to C 10 alkenyl or haloalkenyl, a C2 to C 10 alkynyl or haloalkynyl, a C3 to C 10 cycloalkyl, a C3 to C 10 cycloalkenyl, a C6 to C 30 aryl, a C7 to C30 arylalkyl, C1 to C 10 alkoxy, C6 to C 30 aryloxy, amino, cyano, nitro or mercapto group.

[0058] As used herein, the "monovalent organic group" may refer to a monovalent aliphatic hydrocarbon group, a monovalent alicyclic hydrocarbon group or a monovalent aromatic hydrocarbon group.

[0059] As used herein, the "monovalent aliphatic hydrocarbon group" may be a substituted or unsubstituted C1 to C 20 linear or branched alkyl group, preferably a C1 to C 10 alkyl group, more preferably a C1 to C5 alkyl group.

[0060] As used herein, the "monovalent alicyclic hydrocarbon group" may be a substituted or unsubstituted C3 to C 20 cycloalkyl group, preferably a C3 to C 10 cycloalkyl group, more preferably a C3 to C5 cycloalkyl group.

[0061] As used herein, the "monovalent aromatic hydrocarbon group" may be a substituted or unsubstituted C6 to C 30 aryl group or a substituted or unsubstituted C7 to C 30 arylalkyl group, preferably a C6 to C 10 aryl group or a C7 to C 10 arylalkyl group.

[0062] As used herein, the "divalent aliphatic hydrocarbon group", "divalent alicyclic hydrocarbon group" or "divalent aromatic hydrocarbon group" can be obtained by converting the "monovalent aliphatic hydrocarbon group", "monovalent alicyclic hydrocarbon group" or "monovalent aromatic hydrocarbon group" into a divalent form.

[0063] For example, the "divalent aliphatic hydrocarbon group" may be a substituted or unsubstituted C1 to C 20 linear or branched alkylene group, preferably a C1 to C 10 alkylene group, more preferably a C1 to C5 alkylene group; the "divalent alicyclic hydrocarbon group" may be a substituted or unsubstituted C3 to C 20 subcycloalkyl group, preferably a C3 to C 10 subcycloalkyl group, more preferably a C3 to C5 subcycloalkyl group; and the "divalent aromatic hydrocarbon group" may be a substituted or unsubstituted C6 to C 30 arylene group or a substituted or unsubstituted C7 to C 30 arylenealkyl group, preferably a C6 to C 10 arylene, or a C7 to C 10 arylenealkyl group.

[0064] As used herein, the expression "X to Y" for a specific numerical range means "greater than or equal to X and less than or equal to Y".

[0065] According to an embodiment, a CMP slurry composition for polishing tungsten can be provided. The CMP slurry composition can polish tungsten at a high polishing rate, can reduce the etching rate of a patterned tungsten wafer, and can improve the removal of irregularities on the surface of the patterned tungsten wafer.

[0066] The CMP slurry composition for polishing tungsten according to an embodiment (hereinafter referred to as "CMP slurry composition") can include, for example: a solvent (including a polar solvent or a non-polar solvent); an abrasive; and a corrosion inhibitor. In one implementation, the corrosion inhibitor can include, for example, a polyaminosilane or a salt thereof having a weight average molecular weight of from 500 g / mol to 5,000 g / mol.

[0067] Hereinafter, each component of the CMP slurry composition will be described in detail.

[0068] Corrosion inhibitor

[0069] The CMP slurry composition can include a polyaminosilane (or a salt thereof) having a weight average molecular weight of from 500 g / mol to 5,000 g / mol as a corrosion inhibitor.

[0070] The polyaminosilane can include a polymerization product of at least one aminosilane.

[0071] The aminosilane can include an aminoalkoxysilane or an aminoaryloxysilane compound having a free amino group and an alkoxysilyl group or an aryloxysilyl group participating in polymerization.

[0072] The alkoxysilyl group or the aryloxysilyl group can promote the preparation of a polyaminosilane having a weight average molecular weight within the above range by polymerizing the aminosilane. In one implementation, the alkoxysilyl group or the aryloxysilyl group can promote the achievement of the desired effects of the above CMP slurry composition by providing, for example, silicon-bonded hydroxyl groups ( -Si-OH) or siloxane groups ( -O-Si-O- ) during polymerization.

[0073] As used herein, an "alkoxysilane group" refers to a functional group in which at least one alkoxy group is bonded to silicon, and does not necessarily refer to a functional group in which an alkoxy group is bonded to silicon alone. In one implementation, the alkoxysilane group can be a functional group in which an alkoxy group is bonded to silicon alone, or can be a functional group in which a functional group other than an alkoxy group is further bonded to silicon.

[0074] As used herein, an "aryloxysilane group" refers to a functional group in which at least one aryloxy group is bonded to silicon, and not necessarily to a functional group in which an aryloxy group is bonded to silicon alone. In one implementation, the aryloxysilane group can be a functional group in which an aryloxy group is bonded to silicon alone, or can be a functional group in which a functional group other than an aryloxy group is further bonded to silicon.

[0075] In one implementation, the amino group may not participate in the polymerization, and at least some amino groups may exist in the polyaminosilane in a free state. The free amino group can act as a corrosion inhibitor by adsorbing onto tungsten, thereby helping to reduce the etching rate of the patterned tungsten wafer, improving the removal of the step height on the surface of the patterned tungsten wafer, and preventing a decrease in the tungsten polishing rate. In one implementation, the amino group can help to stabilize the structure of the polyaminosilane by forming hydrogen bonds with each other or with silicon-bonded hydroxyl groups ( -Si-OH) in the polyaminosilane, thereby ensuring that the polyaminosilane in the CMP slurry composition provides its intended effect.

[0076] As used herein, an "amino group" can refer to a primary amino group (-NH2), a secondary amino group (-NH-), or a tertiary amino group ( )

[0077] In one implementation, the polyaminosilane can have or include silicon-bonded hydroxyl groups ( -Si-OH), siloxane groups ( -O-Si-O- ) and free amino groups.

[0078] In one implementation, the aminosilane can be an aminosilane containing at least one nitrogen atom (e.g., 1 to 4 nitrogen atoms, or 1 to 3 nitrogen atoms). In one implementation, the aminosilane can include or be a compound represented by Formula 1,

[0079] [Formula 1]

[0080]

[0081] In Formula 1, X1, X2, and X3 can each independently be or include, for example: hydrogen, hydroxyl, halogen, substituted or unsubstituted C1 to C 20 alkyl, substituted or unsubstituted C6 to C 20 aryl, substituted or unsubstituted C3 to C 20 cycloalkyl, substituted or unsubstituted C7 to C 20 arylalkyl, substituted or unsubstituted C1 to C 20 alkoxy, or substituted or unsubstituted C6 to C 20Aryloxy group.

[0082] In one implementation, at least one of X1, X2, and X3 can be, for example, a hydroxyl group, a substituted or unsubstituted C1 to C 20 alkoxy group, or a substituted or unsubstituted C6 to C 20 aryloxy group.

[0083] Y1 can be, for example, a divalent aliphatic hydrocarbon group, a divalent alicyclic hydrocarbon group, or a divalent aromatic hydrocarbon group.

[0084] R1 and R2 can each independently be or include, for example: hydrogen, a hydroxyl group, a substituted or unsubstituted C1 to C 20 monovalent aliphatic hydrocarbon group, a substituted or unsubstituted C3 to C 20 monovalent alicyclic hydrocarbon group, a substituted or unsubstituted C6 to C 30 monovalent aromatic group, a functional group represented by Formula 2, or a functional group represented by Formula 3.

[0085] [Formula 2]

[0086]

[0087] In Formula 2, is the bonding site to the nitrogen (N) of Formula 1.

[0088] Y2 can be, for example, a divalent aliphatic hydrocarbon group, a divalent alicyclic hydrocarbon group, or a divalent aromatic hydrocarbon group.

[0089] R3 and R4 can each independently be or include, for example, hydrogen, a hydroxyl group, a substituted or unsubstituted C1 to C 20 monovalent aliphatic hydrocarbon group, a substituted or unsubstituted C3 to C 20 monovalent alicyclic hydrocarbon group, or a substituted or unsubstituted C6 to C 30 monovalent aromatic hydrocarbon group.

[0090] [Formula 3]

[0091]

[0092] In Formula 3, is the bonding site to the nitrogen (N) of Formula 1.

[0093] Y3 and Y4 can each independently be or include, for example, a divalent aliphatic hydrocarbon group, a divalent alicyclic hydrocarbon group, or a divalent aromatic hydrocarbon group.

[0094] R5, R6, and R7 can each independently be or include, for example: hydrogen, a hydroxyl group, a substituted or unsubstituted C1 to C 20 monovalent aliphatic hydrocarbon group, a substituted or unsubstituted C3 to C 20A monovalent alicyclic hydrocarbon group, or a substituted or unsubstituted C6 to C 30 monovalent aromatic hydrocarbon group.

[0095] In one implementation, X1, X2, and X3 can each independently be, for example, a hydroxyl group, a substituted or unsubstituted C1 to C 20 alkyl group, or a substituted or unsubstituted C1 to C 20 alkoxy group. In one implementation, at least one of X1, X2, and X3 can be, for example, a hydroxyl group, or a substituted or unsubstituted C1 to C 20 alkoxy group. In one implementation, in Formula 1, X1, X2, and X3 can each independently be, for example, a hydroxyl group, or a substituted or unsubstituted C1 to C 20 alkoxy group. The hydroxyl group and the substituted or unsubstituted C1 to C 20 alkoxy group can promote the acid-catalyzed or base-catalyzed polymerization of the aminosilane.

[0096] In one implementation, Y1 can be a divalent aliphatic hydrocarbon group, such as a substituted or unsubstituted C1 to C5 alkylene group.

[0097] In one implementation, R1 and R2 can each be hydrogen. In one implementation, the compound represented by Formula 1 can be a silane containing an amino group (-NH2) having one nitrogen atom. In one implementation, the compound represented by Formula 1 can be aminopropyltrialkoxysilane, such as aminopropyltriethoxysilane (APTES) (3-aminopropyltriethoxysilane) or aminopropyltrimethoxysilane (3-aminopropyltrimethoxysilane).

[0098] In one implementation, R1 can be hydrogen and R2 can be a functional group represented by Formula 2. In one implementation, the compound represented by Formula 1 can be an aminosilane having two nitrogen atoms. In one implementation, Y2 can be a divalent aliphatic hydrocarbon group, such as a substituted or unsubstituted C1 to C5 alkylene group. In one implementation, R3 and R4 can each be hydrogen, such that the compound represented by Formula 1 can be a silane containing an amino group (-NH2) having two nitrogen atoms. In one implementation, the compound represented by Formula 1 can include, for example, aminoethylaminopropyltrimethoxysilane, aminoethylaminopropyltriethoxysilane, aminoethylaminopropylmethyldimethoxysilane, aminoethylaminopropylmethyldiethoxysilane, aminoethylaminomethyltriethoxysilane, or aminoethylaminomethylmethyldiethoxysilane.

[0099] In one implementation, R1 can be hydrogen, and R2 can be a functional group represented by Formula 3. In one implementation, the compound represented by Formula 1 can be an aminosilane having three nitrogen atoms. In one implementation, Y3 and Y4 can each independently be a divalent aliphatic hydrocarbon group, such as a substituted or unsubstituted C1 to C5 alkylene group. In one implementation, R6 and R7 can each be hydrogen, such that the compound represented by Formula 1 can be a silane containing an amino group having three nitrogen atoms. In one implementation, the compound represented by Formula 1 can include, for example, divinyltriaminopropyltrimethoxysilane, divinyltriaminopropyltriethoxysilane, divinyltriaminopropylmethyldimethoxysilane, divinyltriaminopropylmethyldiethoxysilane, or divinyltriaminomethylmethyldiethoxysilane.

[0100] In one implementation, the aminosilane can be in the form of a salt, and the polyaminosilane can be prepared by polymerization of the aminosilane in the form of a salt. In one implementation, the salt of the aminosilane can refer to a neutral salt composed of a cation and an anion derived from the compound represented by Formula 1.

[0101] The cation can be a quaternary ammonium cation derived from the nitrogen of Formula 1. The anion can include: halogen anions (e.g., F - , Cl - , Br - and I - ); organic acid anions, such as carbonate anions (e.g., CO3 2- , HCO3 - ), acetate anion (CH3COO - ), or citrate anion (HOC(COO - )(CH2COO - )2); nitrogen-containing anions (e.g., NO3 - , NO2 - ); phosphorus-containing anions (e.g., PO4 3- , HPO4 2- , H2PO4 - ); sulfur-containing anions (e.g., SO4 2- , HSO4 - ); and cyanide anion (CN - ).

[0102] The polyaminosilane can be prepared by the polymerization of the above-mentioned aminosilane compounds. In one implementation, the polymerization can be carried out in the presence of a catalyst including an acid catalyst or a base catalyst. The acid catalyst can be a strong acid, a weak acid, etc., such as HCl, HNO3, HCOOH, CH3COOH, or HOC(=O)-C(=O)OH (oxalic acid). The base catalyst can be a strong base, a weak base, etc., such as NaOH, KOH, or NH4OH. The polymerization can be carried out at a temperature of 25 °C to 85 °C (for example, 40 °C to 70 °C). Within these ranges, the preparation of the polyaminosilane can be promoted. The polymerization can be carried out in water or a water-miscible solvent (a mixture of water and an organic solvent). The polymerization can be carried out at a reaction acid-base value (pH) within an acidic or basic range (for example, within the range of 2 to 6, 3 to 5, 9 to 13, or 10 to 12). Within these ranges, the preparation of the polyaminosilane can be promoted.

[0103] The CMP slurry composition may comprise a polyaminosilane or a salt thereof having a weight average molecular weight of 500 g / mol to 5,000 g / mol. By using a polyaminosilane or a salt thereof having a weight average molecular weight of 500 g / mol to 5,000 g / mol in place of (for example, unpolymerized) aminosilane, the CMP slurry composition can polish tungsten at a high polishing rate, can reduce the etching rate of the patterned tungsten wafer, and can improve the removal of unevenness on the surface of the patterned tungsten wafer.

[0104] Maintaining the weight average molecular weight of the polyaminosilane at 500 g / mol or greater than 500 g / mol can help ensure the effectiveness of the CMP slurry composition in reducing the etching rate of the patterned tungsten wafer and improving the removal of the step height on the surface of the tungsten wafer, because the effect obtained by adding the polyaminosilane is small. Maintaining the weight average molecular weight of the polyaminosilane at 5,000 g / mol or less than 5,000 g / mol can help prevent a significant reduction in the effectiveness of the CMP slurry composition in polishing tungsten at a high polishing rate. In one implementation, the polyaminosilane or a salt thereof may have a weight average molecular weight of, for example, 1,000 g / mol to 3,000 g / mol.

[0105] In one implementation, a polyaminosilane or a salt thereof having a weight average molecular weight of 500 g / mol to 5,000 g / mol can ensure that the CMP slurry composition polishes tungsten at a high polishing rate, reduces the etching rate of the patterned tungsten wafer, and improves the removal of the step height on the surface of the tungsten wafer when polishing tungsten at a pH within an acidic or weakly acidic range. In one implementation, the CMP slurry composition can be adjusted to this molecular weight by adjusting one or more of the following conditions: reaction temperature, reaction pH, type or concentration of the acid catalyst used, type or concentration of the base catalyst used, or the reaction time for preparing the polyaminosilane by the polymerization of aminosilane.

[0106] The CMP slurry composition can be prepared by adding a polyaminosilane or a salt thereof having a weight-average molecular weight of 500 g / mol to 5,000 g / mol. Adding an aminosilane during the preparation of the CMP slurry composition may make it difficult to prepare a polyaminosilane having a weight-average molecular weight of 500 g / mol to 5,000 g / mol.

[0107] Based on the total weight of the CMP slurry composition, the polyaminosilane or a salt thereof having a weight-average molecular weight of 500 g / mol to 5,000 g / mol can be present in an amount of 0.001 wt% to 10 wt%, for example, 0.001 wt% to 1 wt%. Within these ranges, it is possible to easily ensure that the CMP slurry composition polishes tungsten at a high polishing rate, reduces the etching rate of the patterned tungsten wafer, and improves the removal of unevenness on the surface of the patterned tungsten wafer.

[0108] In one implementation, the CMP slurry may contain only a polyaminosilane or a salt thereof having a weight-average molecular weight of 500 g / mol to 5,000 g / mol as a corrosion inhibitor. In one implementation, based on the total weight of the corrosion inhibitor contained in the composition, the polyaminosilane or a salt thereof having a weight-average molecular weight of 500 g / mol to 5,000 g / mol can be present in an amount of 100 wt%. Here, "corrosion inhibitor" may include suitable materials that reduce the tungsten etching rate when used in a composition for polishing tungsten. In one implementation, the corrosion inhibitor may include amino acids, amine compounds, etc.

[0109] The amino acids may include, for example, glycine, lysine, isoleucine, leucine, phenylalanine, methionine, threonine, tryptophan, valine, alanine, arginine, cysteine, glutamine, histidine, proline, serine, tyrosine, or lysine.

[0110] The amine compounds may include, for example, hexylamine, tetramethyl-p-phenylenediamine, octylamine, diethylenetriamine, dibutylbenzylamine, aminopropylsilanol, aminopropylsiloxane, dodecylamine, or a mixture thereof.

[0111] The amine compounds may include primary amines, secondary amines, tertiary amines, or quaternary amines. The amine compounds may also include monoamines, diamines, triamines, tetraamines, or amine polymers having a large number of repeating amine groups (e.g., 4 or more amine groups).

[0112] The amine compound may include a long-chain alkyl group. A long-chain alkyl group refers to an alkyl group having 10 or more carbon atoms (for example, 12 or more carbon atoms, or 14 or more carbon atoms). The amine compound may include, for example, dodecylamine, tetradecylamine, hexadecylamine, octadecylamine, oleylamine, N-methyldioctylamine, N-methyloctadecylamine, cocamidopropylamine oxide, benzyldimethylhexadecylammonium chloride, benzalkonium chloride, cocoalkylmethyl[polyoxyethylene(15)]ammonium chloride, octadecylmethyl[polyoxyethylene(15)]ammonium chloride, cetyltrimethylammonium bromide, etc.

[0113] The amine compound may include a polycationic amine. A polycationic amine (as the term is used herein) is an amine compound having multiple (two or more) amine groups, where each of the amine groups is a cationic group (e.g., having a positive charge). In one implementation, the polycationic amine may include a polyquaternary amine. A polyquaternary amine refers to an amine compound including 2 to 4 quaternary ammonium groups such that the polyquaternary amine is a diquaternary amine compound, a triquaternary amine compound, or a tetraquaternary amine compound. The diquaternary amine compound may include, for example: N,N'-methylenebis(dimethyltetradecylammonium bromide), 1,1,4,4-tetrabutylpiperazinediium dibromide, N,N,N′,N′,N′-pentamethyl-N-tallow-1,3-propane-diammonium dichloride, N,N'-hexamethylenebis(tributylammonium hydroxide), decamethonium bromide, didodecyl-tetramethyl-1,4-butanediaminium diiodide, 1,5-dimethyl-1,5-diazoniabicyclo(3.2.2)nonane dibromide, etc. The triquaternary amine compound may include, for example, N(1),N(6)-didodecyl-N(1),N(1),N(6),N(6)-tetramethyl-1,6-hexanediaminium diiodide. The tetraquaternary amine compound may include, for example, methanetetrayltetrakis(tetramethylammonium bromide). The polyquaternary amine compound may also include a long-chain alkyl group (e.g., having 10 or more carbon atoms). In one implementation, the polyquaternary amine compound having a long-chain alkyl group may include N,N'-methylenebis(dimethyltetradecylammonium bromide), N,N,N′,N′,N′-pentamethyl-N-tallow-1,3-propane-diammonium dichloride, didodecyl-tetramethyl-1,4-butanediaminium diiodide, or N(1),N(6)-didodecyl-N(1),N(1),N(6),N(6)-tetramethyl-1,6-hexanediaminium diiodide.

[0114] In one implementation, the composition may further include, for example, an additional corrosion inhibitor other than or different from the polyaminosilane or its salt having a weight average molecular weight of 500 g / mol to 5,000 g / mol as a corrosion inhibitor. For ease of description, the polyaminosilane or its salt having a weight average molecular weight of 500 g / mol to 5,000 g / mol is referred to as the first corrosion inhibitor, and the additional corrosion inhibitor other than the polyaminosilane or its salt having a weight average molecular weight of 500 g / mol to 5,000 g / mol is referred to as the second (or additional) corrosion inhibitor.

[0115] The second corrosion inhibitor may include the amino acid or amine compound as described above. In one implementation, the second corrosion inhibitor may be an amino acid, such as glycine.

[0116] In the CMP slurry composition, the second corrosion inhibitor may be present in an amount of 10 wt% or less than 10 wt% (e.g., 0.01 wt% to 5 wt%, or 0.02 wt% to 2 wt%). Within these ranges, the second corrosion inhibitor can provide its intended effect without adversely affecting the desired effect of the polyaminosilane or its salt having a weight average molecular weight of 500 g / mol to 5,000 g / mol.

[0117] In the CMP slurry composition, the corrosion inhibitor may be present in an amount of 0.001 wt% to 10 wt% (e.g., 0.001 wt% to 1 wt%, or 0.002 wt% to 0.2 wt%). Within these ranges, it is possible to easily ensure that the CMP slurry composition polishes tungsten at a high polishing rate, reduces the etching rate of the patterned tungsten wafer, and improves the removal of unevenness on the surface of the patterned tungsten wafer.

[0118] Solvent

[0119] When polishing a tungsten wafer using an abrasive, the solvent (including polar solvents or non-polar solvents) can help reduce the friction of the abrasive on the surface of the tungsten wafer. The solvent may include water (e.g., ultrapure water or deionized water), organic amines, organic alcohols, organic alkanolamines, organic ethers, organic ketones, etc. In one implementation, the solvent may include ultrapure water or deionized water. In the CMP slurry composition, the solvent may be present in the balance (e.g., 30 wt% to 99 wt%).

[0120] Abrasive

[0121] The abrasive can help polish an insulating film (e.g., a silicon oxide film) and tungsten at a high polishing rate.

[0122] The abrasive may be a metal or non-metal oxide and may include, for example, silica, alumina, cerium dioxide, titanium dioxide, or zirconia. In one implementation, the abrasive may include silica that may contribute to achieving the desired effects described herein.

[0123] The abrasive may be composed of spherical or non-spherical particles and may have an average primary particle size (D 50 ) in the range of 10 nm to 200 nm, such as 20 nm to 180 nm, or 30 nm to 150 nm. Within these ranges, the abrasive may contribute to polishing the insulating film and tungsten, which are the polishing objects herein, at a high polishing rate while preventing defects (e.g., scratches) on the polished surface.

[0124] As used herein, "average particle size (D 50 )" is a typical particle size measurement value and refers to the particle size corresponding to 50% by volume of the abrasive particles when the abrasive particles are distributed in ascending order of volume from the smallest to the largest.

[0125] In the CMP slurry composition, the abrasive may be present in an amount of 0.001 wt% to 20 wt%, such as 0.01 wt% to 10 wt%, 0.05 wt% to 5 wt%, or 0.1 wt% to 3 wt%. Within these ranges, a sufficient polishing rate with respect to the insulating film and tungsten can be ensured, scratches can be prevented, and the dispersion stability of silica can be improved.

[0126] The abrasive may include an unmodified abrasive or a modified abrasive.

[0127] In one implementation, the abrasive may be incorporated into the composition as an unmodified metal or non-metal oxide.

[0128] In one implementation, the abrasive may be incorporated into the composition as a metal or non-metal oxide modified with at least one modifier. Compared with the unmodified abrasive, the modified abrasive may contribute to significantly improving the polishing rate and flatness of the polished surface and may contribute to reducing scratches. In one implementation, even at a pH within the weakly acidic range, the modified abrasive can polish tungsten at a high polishing rate, which is higher than the polishing rate of some other strongly acidic CMP slurry compositions.

[0129] In one implementation, the modified abrasive may include silica modified with an aminosilane.

[0130] The modified abrasive may have a positive charge on its surface and may have a surface potential in the range of 10 mV to 60 mV. Within this range, the modified abrasive can improve the flatness of the polished surface and reduce surface defects.

[0131] In one implementation, the modifier may include the above-mentioned amino-silane compound or its salt. The modified abrasive may be obtained by adding the modifier to the unmodified abrasive and then reacting for a predetermined period of time. In one implementation, the unmodified abrasive may include colloidal silica or calcined silica, such as colloidal silica.

[0132] In one implementation, the CMP slurry composition may further include, for example, an oxidizing agent, a catalyst, or an organic acid.

[0133] The oxidizing agent may promote the polishing of the tungsten wafer by oxidizing tungsten.

[0134] The oxidizing agent may include an inorganic per-compound, an organic per-compound, bromic acid or its salt, nitric acid or its salt, chloric acid or its salt, chromic acid or its salt, iodic acid or its salt, iron or its salt, copper or its salt, rare earth metal oxide, transition metal oxide, or potassium dichromate. Herein, "per-compound" refers to a compound containing at least one peroxide group (-O-O-) or a compound containing an element in its highest oxidation state. In one implementation, the oxidizing agent may be a per-compound. In one implementation, the per-compound may include hydrogen peroxide, potassium periodate, calcium persulfate, or potassium ferricyanide, such as hydrogen peroxide. In one implementation, the oxidizing agent may be incorporated into the CMP slurry composition immediately before polishing.

[0135] In the CMP slurry composition, the oxidizing agent may be present in an amount of 0.01 wt% to 20 wt%, such as 0.05 wt% to 10 wt%, or 0.1 wt% to 5 wt%. Within these ranges, the CMP slurry composition may polish tungsten at an increased polishing rate.

[0136] The catalyst may include an iron ion compound, an iron ion complex, or a hydrate thereof.

[0137] The iron ion compound, the iron ion complex, or a hydrate thereof may help to increase the polishing rate relative to tungsten.

[0138] The iron ion compound may include a compound containing a ferric cation. The compound containing a ferric cation may include, for example, a suitable compound in which the ferric cation exists as a free cation in its aqueous solution. In one implementation, the compound containing a ferric cation may include, for example, ferric chloride (FeCl3), ferric nitrate (Fe(NO3)3), or ferric sulfate (Fe2(SO4)3).

[0139] The iron ion complex may include a complex containing a ferric cation. The complex containing a ferric cation may include a compound (or its salt) formed by reacting a ferric cation with an organic or inorganic compound having at least one functional group (e.g., carboxylic acid, phosphoric acid, sulfuric acid, amino acid, or amine) in its aqueous solution. The organic or inorganic compound may include citrate, ammonium citrate, p-toluenesulfonic acid (pTSA), 1,3-propylenediaminetetraacetic acid (PDTA), ethylenediaminetetraacetic acid (EDTA), diethylenetriaminepentaacetic acid (DTPA), nitrilotriacetic acid (NTA), or ethylenediamine-N,N'-disuccinic acid (EDDS). The complex containing a ferric cation may include, for example, ferric citrate, ammonium ferric citrate, Fe(III)-pTSA, Fe(III)-PDTA, or Fe(III)-EDTA.

[0140] In the CMP slurry composition, the catalyst (e.g., an iron ion compound, an iron ion complex, or its hydrate) may be present in an amount of 0.001 wt% to 10 wt%, such as 0.001 wt% to 5 wt%, 0.001 wt% to 1 wt%, or 0.001 wt% to 0.5 wt%. Within these ranges, the catalyst may help to increase the polishing rate with respect to the tungsten film.

[0141] The organic acid may include carboxylic acids, such as malonic acid, maleic acid, or malic acid.

[0142] In the CMP slurry composition, the organic acid may be present in an amount of 0.001 wt% to 20 wt%, such as 0.01 wt% to 10 wt%, 0.01 wt% to 5 wt%, or 0.01 wt% to 1 wt%. Within these ranges, the CMP slurry composition may help to reduce erosion and protrusion during polishing of tungsten.

[0143] The CMP slurry composition may have a pH of 2 to 6. By using the above unmodified silica or modified silica as the abrasive, the CMP slurry composition according to the examples can achieve a high polishing rate with respect to tungsten even at a pH within the weakly acidic range, which is higher than that of a strongly acidic CMP slurry composition.

[0144] The CMP slurry composition may further include a pH adjuster to adjust the pH of the composition to the above range.

[0145] In one implementation, the pH adjuster may include: an inorganic acid such as nitric acid, phosphoric acid, hydrochloric acid or sulfuric acid; or an organic acid such as an organic acid with a pK a of 6 or less than 6, such as acetic acid or phthalic acid. In one implementation, the pH adjuster may include a base such as ammonia water, sodium hydroxide, potassium hydroxide, ammonium hydroxide, sodium carbonate or potassium carbonate.

[0146] In one implementation, in addition to the above components, the CMP slurry composition may further contain suitable additives such as biocides, surfactants, dispersants, modifiers or surface-active agents. In the CMP slurry composition, the additives may be present in an amount of 0.001 wt% to 5 wt%, such as 0.001 wt% to 1 wt%, or 0.001 wt% to 0.5 wt%. Within these ranges, the additives can help provide their intended effects without affecting the polishing rate.

[0147] According to another embodiment, a method for polishing tungsten may include polishing tungsten using the CMP slurry composition for polishing tungsten according to the embodiment.

[0148] The following examples and comparative examples are provided to highlight the characteristics of one or more embodiments, but it should be understood that neither the examples and comparative examples should be construed as limiting the scope of the embodiments, nor should the comparative examples be construed as being outside the scope of the embodiments. In addition, it should be understood that the embodiments are not limited to the specific details described in the examples and comparative examples.

[0149] Details of the components used in the examples and comparative examples are as follows:

[0150] (1) Unmodified abrasive: Colloidal silica (PL-7, Fuso Chemical) with an average particle size (D 50 ) of 120 nm

[0151] (2) pH adjuster: Nitric acid or ammonia water

[0152] Example 1

[0153] The amino silane represented by formula 4 (where Et is ethyl) was polymerized for 8 hours at a pH of 2.5 and a temperature of 65 °C to obtain a polymerization product of amino silane (weight average molecular weight: 1,500 g / mol).

[0154] [Formula 4]

[0155]

[0156] Based on the total weight of the final CMP slurry composition, 1.5 wt% of unmodified silica as an abrasive, 0.03 wt% of malonic acid as an organic acid, 0.15 wt% of glycine as a corrosion inhibitor, 0.001 wt% of ferric nitrate nonahydrate as a compound containing iron ions, 0.001 wt% of the diammonium salt of ethylenediaminetetraacetic acid, and 0.005 wt% of the polymerization product of the obtained aminosilane were mixed with deionized water to prepare the composition. The resulting composition was adjusted to a pH of 2.5 using a pH regulator. 0.5 wt% of hydrogen peroxide as an oxidant was mixed with the resulting composition immediately before polishing based on the total weight of the final CMP slurry composition to prepare a CMP slurry composition for polishing tungsten, with the balance being deionized water.

[0157] Example 2

[0158] A CMP slurry composition was prepared in the same manner as in Example 1, except that the content of the polymerization product of the aminosilane represented by Formula 4 was changed from 0.005 wt% to 0.01 wt%.

[0159] Example 3

[0160] The aminosilane represented by Formula 5 (where Me is methyl) was polymerized for 8 hours under the conditions of pH 2.5 and temperature 65 °C to obtain a polymerization product of aminosilane (weight average molecular weight: 1,500 g / mol).

[0161] [Formula 5]

[0162]

[0163] Thereafter, a CMP slurry composition for polishing tungsten was prepared in the same manner as in Example 1, except that 0.005 wt% of the polymerization product of the aminosilane represented by Formula 5 was used instead of 0.005 wt% of the polymerization product of the aminosilane represented by Formula 4.

[0164] Example 4

[0165] A CMP slurry composition was prepared in the same manner as in Example 3, except that the content of the polymerization product of the aminosilane represented by Formula 5 was changed from 0.005 wt% to 0.01 wt%.

[0166] Example 5

[0167] The aminosilane represented by Formula 6 (where Me is methyl) was polymerized for 8 hours under the conditions of pH 2.5 and temperature 65 °C to obtain a polymerization product of aminosilane (weight average molecular weight: 1,500 g / mol).

[0168] [Formula 6]

[0169]

[0170] Thereafter, a CMP slurry composition for polishing tungsten was prepared in the same manner as in Example 1, except that a polymerization product of an aminosilane represented by Formula 6 at 0.005% by weight was used instead of a polymerization product of an aminosilane represented by Formula 4 at 0.005% by weight.

[0171] Example 6

[0172] A CMP slurry composition was prepared in the same manner as in Example 5, except that the content of the polymerization product of the aminosilane represented by Formula 6 was changed from 0.005% by weight to 0.01% by weight.

[0173] Comparative Example 1

[0174] A CMP slurry composition was prepared in the same manner as in Example 1, except that the polymerization product of the aminosilane represented by Formula 4 was not used.

[0175] Comparative Example 2

[0176] A CMP slurry composition was prepared in the same manner as in Example 1, except that 0.01% by weight of the (unpolymerized) aminosilane represented by Formula 4 was used instead of the polymerization product of the aminosilane represented by Formula 4.

[0177] Comparative Example 3

[0178] A CMP slurry composition was prepared in the same manner as in Example 1, except that the polymerization conditions of the aminosilane represented by Formula 4 were changed to provide a polymerization product of the aminosilane having a weight average molecular weight of 350 g / mol, and the polymerization product was present in an amount of 0.01% by weight.

[0179] Comparative Example 4

[0180] A CMP slurry composition was prepared in the same manner as in Example 1, except that the polymerization conditions of the aminosilane represented by Formula 4 were changed to provide a polymerization product of the aminosilane having a weight average molecular weight of 5,500 g / mol, and the polymerization product was present in an amount of 0.01% by weight.

[0181] The polishing characteristics of each of the CMP slurry compositions prepared in Examples 1 to 6 and Comparative Examples 1 to 4 were evaluated under the following polishing evaluation conditions. The results are shown in Table 1.

[0182] [Polishing Evaluation Conditions]

[0183] 1. Polishing Machine: Reflexion LK 300 mm (AMAT Co., Ltd.)

[0184] 2. Polishing Conditions

[0185] - Polishing Pad: IC1010 (DuPont Inc.)

[0186] - Head Speed: 101 rpm

[0187] - Platen Speed: 100 rpm

[0188] - Polishing Pressure: 2 psi

[0189] - Retainer Ring Pressure: 9 psi

[0190] - Slurry Flow Rate: 240 ml / min

[0191] - Polishing Time: 60 seconds

[0192] 3. Polishing Target

[0193] - Commercially available patterned tungsten wafers (MIT 854, 300 mm)

[0194] The CMP slurry (STARPLANAR - 7000, Samsung SDI Co., Ltd.) for tungsten polishing was mixed with deionized water at a weight ratio of 1:2, and then 2 wt% hydrogen peroxide was added based on the total weight of the mixture. Then, the resulting mixture was used to perform preliminary polishing on the patterned tungsten wafers on a polishing machine (Reflexion LK 300 mm) with a polishing pad (IC1010, DuPont Inc.) under the conditions of a head speed of 101 rpm, a platen speed of 100 rpm, a polishing pressure of 2 psi, a retainer ring pressure of 9 psi, and a mixture flow rate of 250 ml / min. Through this process, the tungsten metal layer was removed, exposing the oxide film / metal pattern.

[0195] 4. Analysis Method

[0196] Polishing Rate (unit: Å / min): After polishing the patterned tungsten wafers under the above polishing conditions, the polishing rate of the oxide film was obtained by converting the film thickness difference before and after polishing using a reflectometer, and the tungsten polishing rate was obtained by converting the resistance difference before and after polishing.

[0197] Erosion (unit: nm): After polishing the patterned tungsten wafer under the above polishing conditions, the profile of the wafer pattern was measured using an atomic force profiler (InSight CAP, Bruker Co., Ltd.). The erosion was calculated based on the height difference between the peri oxide film and the cell oxide film in a 0.18 μm × 0.18 μm patterned area of the polished wafer. Here, the scan rate was set to 100 μm / second, and the scan length was set to 2 mm.

[0198] Etch rate (unit: Å / minute): The unpatterned tungsten wafer was cut into a size of 2 cm × 2 cm and then immersed in the slurry at 60 °C for 5 minutes. The etch rate of the tungsten wafer was obtained by comparing the amount of etching before and after immersion in the slurry.

[0199] Table 1

[0200]

[0201] As can be seen from Table 1, the CMP slurry compositions of Examples 1 to 6 polish tungsten at a high polishing rate, reduce the etch rate of the patterned tungsten wafer, and improve the removal of unevenness on the surface of the tungsten wafer.

[0202] In contrast, the compositions of Comparative Examples 1 to 4 that do not contain polyaminosilane having a weight average molecular weight of 500 g / mol to 5,000 g / mol fail to provide all of the above desired effects.

[0203] One or more embodiments can provide a CMP slurry composition for polishing tungsten, which can polish tungsten at a high polishing rate, can reduce the etch rate of the patterned tungsten wafer, and can improve the removal of the step height on the surface of the patterned tungsten wafer.

[0204] Exemplary embodiments have been disclosed herein, and although specific terms are used, these specific terms should be used and interpreted as having only general and illustrative meanings and not for limiting purposes. In some cases, as would be apparent to those of ordinary skill in the art before the filing of this application, unless otherwise specifically specified, the features, characteristics, and / or elements described in connection with specific embodiments can be used alone or in combination with the features, characteristics, and / or elements described in connection with other embodiments. Therefore, those skilled in the art should understand that various changes in form and detail can be made without departing from the spirit and scope of the present invention as set forth in the following claims.

Claims

1. A chemical mechanical polishing slurry composition for polishing tungsten, the chemical mechanical polishing slurry composition comprising: A solvent, the solvent including a polar solvent or a non-polar solvent; An abrasive; and A corrosion inhibitor, wherein the corrosion inhibitor includes: A polyaminosilane having a weight average molecular weight of 500 g / mol to 5,000 g / mol, or A salt of the polyaminosilane.

2. The chemical mechanical polishing slurry composition according to claim 1, wherein the polyaminosilane includes silicon-bonded hydroxyl groups, siloxanyl groups or free amino groups.

3. The chemical mechanical polishing slurry composition according to claim 1, wherein the polyaminosilane includes a polymerization product of an aminosilane.

4. The chemical mechanical polishing slurry composition according to claim 3, wherein: The aminosilane contains a compound represented by Formula 1, [Formula 1] X1, X2, and X3 are each independently hydrogen, hydroxy, halogen, substituted or unsubstituted C1 to C 20 alkyl, substituted or unsubstituted C6 to C 20 aryl, substituted or unsubstituted C3 to C 20 cycloalkyl, substituted or unsubstituted C7 to C 20 arylalkyl, substituted or unsubstituted C1 to C 20 alkoxy, or substituted or unsubstituted C6 to C 20 aryloxy, At least one of X1, X2, and X3 is a hydroxyl group, a substituted or unsubstituted C1 to C 20 alkoxy group, or a substituted or unsubstituted C6 to C 20 aryloxy group, Y1 is a divalent aliphatic hydrocarbon group, a divalent alicyclic hydrocarbon group or a divalent aromatic hydrocarbon group, and R1 and R2 are each independently hydrogen, a hydroxyl group, a substituted or unsubstituted C1 to C 20 monovalent aliphatic hydrocarbon group, a substituted or unsubstituted C3 to C 20 monovalent alicyclic hydrocarbon group, a substituted or unsubstituted C6 to C 30 monovalent aromatic group, a functional group represented by Formula 2, or a functional group represented by Formula 3, [Formula 2] is the nitrogen bonding site of Formula 1, Y2 is a divalent aliphatic hydrocarbon group, a divalent alicyclic hydrocarbon group or a divalent aromatic hydrocarbon group, and R3 and R4 are each independently hydrogen, a hydroxyl group, a substituted or unsubstituted C1 to C 20 monovalent aliphatic hydrocarbon group, a substituted or unsubstituted C3 to C 20 monovalent alicyclic hydrocarbon group, or a substituted or unsubstituted C6 to C 30 monovalent aromatic hydrocarbon group, [Formula 3] is the attachment site for the nitrogen of formula 1, Y3 and Y4 are each independently a divalent aliphatic hydrocarbon group, a divalent alicyclic hydrocarbon group or a divalent aromatic hydrocarbon group, and R5, R6, and R7 are each independently hydrogen, a hydroxyl group, a substituted or unsubstituted C1 to C 20 monovalent aliphatic hydrocarbon group, a substituted or unsubstituted C3 to C 20 monovalent alicyclic hydrocarbon group, or a substituted or unsubstituted C6 to C 30 monovalent aromatic hydrocarbon group.

5. The chemical mechanical polishing slurry composition according to claim 3, wherein the aminosilane includes aminopropyltriethoxysilane, aminopropyltrimethoxysilane, aminoethylaminopropyltrimethoxysilane, aminoethylaminopropyltriethoxysilane, aminoethylaminopropylmethyldimethoxysilane, aminoethylaminopropylmethyldiethoxysilane, aminoethylaminomethyltriethoxysilane, aminoethylaminomethylmethyldiethoxysilane, diethylenetriaminopropyltrimethoxysilane, diethylenetriaminopropyltriethoxysilane, diethylenetriaminopropylmethyldimethoxysilane, diethylenetriaminopropylmethyldiethoxysilane, or diethylenetriaminomethylmethyldiethoxysilane.

6. The chemical mechanical polishing slurry composition according to claim 1, wherein, based on the total weight of the chemical mechanical polishing slurry composition, the polyaminosilane having a weight average molecular weight of 500 g / mol to 5,000 g / mol or the salt of the polyaminosilane is present in an amount of 0.001 wt% to 10 wt%.

7. The chemical mechanical polishing slurry composition according to claim 1, wherein the corrosion inhibitor further contains an additional corrosion inhibitor, the additional corrosion inhibitor being different from the polyaminosilane having a weight average molecular weight of 500 g / mol to 5,000 g / mol or the salt of the polyaminosilane.

8. The chemical mechanical polishing slurry composition according to claim 7, wherein the additional corrosion inhibitor includes an amino acid or an amine compound.

9. The chemical mechanical polishing slurry composition according to claim 1, wherein the abrasive includes an unmodified abrasive or a modified abrasive.

10. The chemical mechanical polishing slurry composition according to claim 9, wherein: The abrasive includes the modified abrasive, and The modified abrasive includes silica modified with an aminosilane or a salt of the aminosilane.

11. The chemical mechanical polishing slurry composition according to claim 1 further comprises an oxidizing agent, a catalyst or an organic acid.

12. The chemical mechanical polishing slurry composition according to claim 11, wherein based on the total weight of the chemical mechanical polishing slurry composition, the chemical mechanical polishing slurry composition comprises: 0.001% to 20% by weight of the abrasive, 0.001% to 10% by weight of the corrosion inhibitor, 0.01% to 20% by weight of the oxidizing agent, 0.001% to 10% by weight of the catalyst, 0.001% to 20% by weight of the organic acid, and the solvent.

13. A method for polishing tungsten, the method comprising: polishing tungsten using the chemical mechanical polishing slurry composition for polishing tungsten according to claim 1.

14. The method according to claim 13, wherein the polyaminosilane comprises silicon-bonded hydroxyl groups, siloxanyl groups or free amino groups.

15. The method according to claim 13, wherein the polyaminosilane comprises a polymerization product of an aminosilane.

16. The method according to claim 15, wherein: the aminosilane comprises a compound represented by Formula 1, [Formula 1] X1, X2, and X3 are each independently hydrogen, a hydroxyl group, a halogen, a substituted or unsubstituted C1 to C 20 alkyl group, a substituted or unsubstituted C6 to C 20 aryl group, a substituted or unsubstituted C3 to C 20 cycloalkyl group, a substituted or unsubstituted C7 to C 20 arylalkyl group, a substituted or unsubstituted C1 to C 20 alkoxy group, or a substituted or unsubstituted C6 to C 20 aryloxy group, At least one of X1, X2 and X3 is a hydroxyl group, a substituted or unsubstituted C1 to C 20 alkoxy group, or a substituted or unsubstituted C6 to C 20 aryloxy group, Y1 is a divalent aliphatic hydrocarbon group, a divalent alicyclic hydrocarbon group or a divalent aromatic hydrocarbon group, and R1 and R2 are each independently hydrogen, a hydroxyl group, a substituted or unsubstituted C1 to C 20 monovalent aliphatic hydrocarbon group, a substituted or unsubstituted C3 to C 20 monovalent alicyclic hydrocarbon group, a substituted or unsubstituted C6 to C 30 monovalent aromatic group, a functional group represented by Formula 2, or a functional group represented by Formula 3, [Formula 2] is the nitrogen bonding site of Formula 1, Y2 is a divalent aliphatic hydrocarbon group, a divalent alicyclic hydrocarbon group or a divalent aromatic hydrocarbon group, and R3 and R4 are each independently hydrogen, hydroxy, a substituted or unsubstituted C1 to C 20 monovalent aliphatic hydrocarbon group, a substituted or unsubstituted C3 to C 20 monovalent alicyclic hydrocarbon group, or a substituted or unsubstituted C6 to C 30 monovalent aromatic hydrocarbon group, [Formula 3] is the bonding site of nitrogen of formula 1, Y3 and Y4 are each independently a divalent aliphatic hydrocarbon group, a divalent alicyclic hydrocarbon group or a divalent aromatic hydrocarbon group, and R5, R6, and R7 are each independently hydrogen, a hydroxyl group, a substituted or unsubstituted C1 to C 20 monovalent aliphatic hydrocarbon group, a substituted or unsubstituted C3 to C 20 monovalent alicyclic hydrocarbon group, or a substituted or unsubstituted C6 to C 30 monovalent aromatic hydrocarbon group.

17. The method according to claim 15, wherein the aminosilane comprises aminopropyltriethoxysilane, aminopropyltrimethoxysilane, aminoethylaminopropyltrimethoxysilane, aminoethylaminopropyltriethoxysilane, aminoethylaminopropylmethyldimethoxysilane, aminoethylaminopropylmethyldiethoxysilane, aminoethylaminomethyltriethoxysilane, aminoethylaminomethylmethyldiethoxysilane, diethylenetriaminopropyltrimethoxysilane, diethylenetriaminopropyltriethoxysilane, diethylenetriaminopropylmethyldimethoxysilane, diethylenetriaminopropylmethyldiethoxysilane, or diethylenetriaminomethylmethyldiethoxysilane.

18. The method according to claim 13, wherein the corrosion inhibitor further comprises an additional corrosion inhibitor different from the polyaminosilane having a weight average molecular weight of 500 g / mol to 5,000 g / mol or the salt of the polyaminosilane.

19. The method according to claim 13, wherein the chemical mechanical polishing slurry composition further comprises an oxidizing agent, a catalyst or an organic acid.

20. The method according to claim 19, wherein based on the total weight of the chemical mechanical polishing slurry composition, the chemical mechanical polishing slurry composition comprises: 0.001% to 20% by weight of the abrasive, 0.001% to 10% by weight of the corrosion inhibitor, 0.01% to 20% by weight of the oxidizing agent, 0.001% to 10% by weight of the catalyst, 0.001% to 20% by weight of the organic acid, and the solvent.

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