N-type doped diamond and preparation method thereof
By introducing co-doping of silicon atoms and phosphorus atoms into the diamond lattice, the ionization energy of n-type doped diamond is reduced, and the limitations of phosphorus doped diamond application at room temperature are solved, and the carrier concentration and mobility are improved. It is suitable for high-frequency, high-temperature and high-power electronic devices.
Patent Information
- Application Number
- CN202510426077.3
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-04-07
- Publication Date
- 2025-07-08
AI Technical Summary
In the prior art, n-type doped diamond has a deep impurity energy level, which limits its application at room temperature, especially the ionization energy of phosphorus doped diamond is about 0.57 eV, which is not conducive to effective use in electronic devices.
By introducing silicon atoms and phosphorus atoms into the diamond lattice for co-doping, the lattice symmetry is broken and the low symmetry doping system is formed, which makes the impurity level of the phosphorus atom shallow and the ionization energy is reduced.
The ionization energy of n-type doped diamond is reduced, the carrier concentration and mobility are improved, and its conductivity is enhanced, making it suitable for use at room temperature.
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Abstract
Description
Technical Field
[0001] The present disclosure relates to the technical field of n-type doped diamond, and more specifically, to n-type doped diamond and a preparation method thereof. Background Art
[0002] Diamond has an extremely high carrier mobility. At room temperature, the electron and hole mobilities are 4500 and 3800 respectively, the electric field breakdown strength is as high as 10 , and the thermal conductivity is about 2000 . At the same time, diamond also has properties such as radiation resistance and chemical inertness. These excellent physical and chemical properties of diamond make it have great potential application prospects in high-frequency, high-temperature, and high-power electronic devices. However, the ultra-wide bandgap of about 5.47 eV of intrinsic diamond limits its application in electronic devices.
[0003] For n-type doped diamond, the current mainstream doping element is phosphorus. However, the impurity energy level of phosphorus-doped diamond is relatively deep, and the ionization energy is about 0.57 eV, which is not conducive to the application of diamond materials at room temperature. Summary of the Invention
[0004] In view of this, the present disclosure provides an n-type doped diamond and a preparation method thereof.
[0005] The present disclosure provides an n-type doped diamond on the one hand, including: at least one silicon atom, at least one phosphorus atom, and a plurality of carbon atoms form a diamond lattice; wherein, at least one silicon atom and at least one phosphorus atom are respectively located at lattice points of the diamond lattice; a silicon atom and a phosphorus atom are located at adjacent lattice points; and / or, at least two carbon atoms are isolated between a silicon atom and a phosphorus atom.
[0006] According to an embodiment of the present disclosure, when the number of at least one silicon atom and at least one phosphorus atom is one respectively, and a silicon atom and a phosphorus atom are located at adjacent lattice points, the ionization energy of the n-type doped diamond is 0.46 eV.
[0007] According to an embodiment of the present disclosure, when the number of at least one silicon atom and at least one phosphorus atom is one respectively, and a silicon atom and a phosphorus atom are isolated by at least two carbon atoms, the ionization energy of the n-type doped diamond is 0.51 eV.
[0008] According to an embodiment of the present disclosure, the difference between the impurity energy level position corresponding to including one silicon atom and one phosphorus atom and the impurity energy level position corresponding to including one phosphorus atom is greater than or equal to 0.06 eV.
[0009] According to an embodiment of the present disclosure, the diamond includes intrinsic diamond.
[0010] The second aspect of the present disclosure provides a method for preparing n-type doped diamond, including: obtaining a diamond structure, the unit cell of the diamond structure is obtained by nesting two face-centered cubic lattices offset by 1 / 4 unit along the body diagonal, and each carbon atom in the diamond structure forms a regular tetrahedron structure with the corresponding four nearest neighbor carbon atoms; substituting at least one silicon atom for at least one carbon atom in the diamond structure, and one substituted silicon atom corresponds to one lattice point in the diamond structure; substituting at least one phosphorus atom for at least one carbon atom in the diamond structure, and one substituted phosphorus atom corresponds to one lattice point in the diamond structure; wherein, one silicon atom and one phosphorus atom are located at the lattice points corresponding to two adjacent carbon atoms in the diamond structure.
[0011] The third aspect of the present disclosure provides a method for preparing n-type doped diamond, including: obtaining a diamond structure, the unit cell of the diamond structure is obtained by nesting two face-centered cubic lattices offset by 1 / 4 unit along the body diagonal, and each carbon atom in the diamond structure forms a regular tetrahedron structure with the corresponding four nearest neighbor carbon atoms; substituting at least one silicon atom for at least one carbon atom in the diamond structure, and one substituted silicon atom corresponds to one lattice point in the diamond structure; substituting at least one phosphorus atom for at least one carbon atom in the diamond structure, and one substituted phosphorus atom corresponds to one lattice point in the diamond structure; wherein, the lattice point of one silicon atom in the diamond structure and the lattice point of one phosphorus atom in the diamond crystal structure are isolated by at least two carbon atoms.
[0012] The fourth aspect of the present disclosure provides a method for preparing n-type doped diamond, including: obtaining a diamond structure, the unit cell of the diamond structure is obtained by nesting two face-centered cubic lattices offset by 1 / 4 unit along the body diagonal, and each carbon atom in the diamond structure forms a regular tetrahedron structure with the corresponding four nearest neighbor carbon atoms; substituting at least one silicon atom for at least one carbon atom in the diamond structure, and one substituted silicon atom corresponds to one lattice point in the diamond structure; substituting at least one phosphorus atom for at least one carbon atom in the diamond structure, and one substituted phosphorus atom corresponds to one lattice point in the diamond structure; wherein, one silicon atom and one phosphorus atom are located at the lattice points corresponding to two adjacent carbon atoms in the diamond structure and, the lattice point of one silicon atom in the diamond structure and the lattice point of one phosphorus atom in the diamond crystal structure are isolated by at least two carbon atoms.
[0013] The n-type doped diamond provided according to the embodiments of the present disclosure has at least the following beneficial effects:
[0014] By doping at least one silicon atom to substitute carbon atoms and at least one phosphorus atom to substitute carbon atoms in the diamond crystal structure, the whole doping system has a lower symmetry, which reduces the ionization energy of the prepared n-type doped diamond and makes the system stable. BRIEF DESCRIPTION OF THE DRAWINGS
[0015] Through the following description of the embodiments of the present disclosure with reference to the drawings, the above and other objects, features and advantages of the present disclosure will become clearer. In the drawings:
[0016] Figure 1 Schematically shows a structural diagram of a diamond lattice doped with a substitutional silicon atom in a local doping structure;
[0017] Figure 2 Schematically shows a structural diagram of a diamond lattice doped with a substitutional silicon atom and a substitutional phosphorus atom in a local doping structure according to an embodiment of the present disclosure;
[0018] Figure 3 Schematically shows the diamond energy band structure and the corresponding density of states of intrinsic diamond and diamond doped with a substitutional silicon atom and a substitutional phosphorus atom in a local doping structure according to an embodiment of the present disclosure;
[0019] Figure 4 Schematically shows a schematic diagram of the preparation of n-type doped diamond by microwave chemical vapor deposition according to an embodiment of the present disclosure. DETAILED DESCRIPTION OF THE EMBODIMENTS
[0020] Hereinafter, embodiments of the present disclosure will be described with reference to the drawings. However, it should be understood that these descriptions are merely exemplary and are not intended to limit the scope of the present disclosure. In the following detailed description, for the sake of explanation, many specific details are set forth to provide a comprehensive understanding of the embodiments of the present disclosure. However, obviously, one or more embodiments can also be implemented without these specific details. In addition, in the following description, descriptions of well-known systems and technologies are omitted to avoid unnecessarily confusing the concepts of the present disclosure.
[0021] The terms used herein are merely for describing specific embodiments and are not intended to limit the present disclosure. The terms "including", "comprising" and the like used herein indicate the presence of features, steps, operations and / or components, but do not exclude the presence or addition of one or more other features, steps, operations or components.
[0022] All terms used herein (including technical and scientific terms) have the meanings commonly understood by those skilled in the art, unless otherwise defined. It should be noted that the terms used herein should be interpreted as having a meaning consistent with the context of this specification and should not be interpreted in an idealized or overly rigid manner.
[0023] In the case of using expressions such as "at least one of A, B, and C", generally, it should be interpreted according to the meaning usually understood by those skilled in the art (for example, "a system having at least one of A, B, and C" should include, but not be limited to, a system having only A, only B, only C, having A and B, having A and C, having B and C, and / or having A, B, and C, etc.).
[0024] Since the bandgap of intrinsic diamond is about 5.47 eV, it limits its application in electronic devices. In this regard, various p-type and n-type dopings have been proposed to reduce the bandgap of diamond, with mainstream doping elements such as boron and phosphorus. However, both of these doping elements provide relatively deep impurity energy levels. For example, in phosphorus doping, the donor energy level is about 0.57 eV below the bottom of the conduction band (i.e., the ionization energy is 0.57 eV), which is still not conducive to utilization at room temperature.
[0025] Currently, although there are many theoretical predictions of n-type doping systems in diamond that may provide shallow impurity energy levels, including single-element doping and multi-element co-doping. However, experimentally, there is no report of other doping systems that exceed phosphorus-doped diamond. This is mainly because existing theoretical results show that doping systems that are expected to provide shallower impurity energy levels than phosphorus doping often have difficulty being incorporated into diamond in an ideal configuration or being stable in diamond.
[0026] Figure 1 A schematic diagram showing the local doping structure of an embodiment containing a diamond lattice doped with a substitutional silicon atom is shown.
[0027] Based on this, as Figure 1 shown, when a silicon atom is substitutionally incorporated into intrinsic diamond, the silicon atom substitutes into the position originally occupied by a carbon atom, forming a silicon-doped diamond lattice structure. This substitutional incorporation breaks the original lattice symmetry, introduces local distortion, thereby changing the electronic structure of diamond, and can regulate the properties of the host energy band, reducing its bandgap width by 0.06 eV. And depending on the doping concentration of the silicon atom, the ability to regulate the bandgap of diamond is also different, and the bandgap reduction value can reach 1.10 eV and above. When the doping concentration of the silicon atom is higher, the regulation effect is more significant.
[0028] Based on this, a scheme of doping at least one silicon atom and at least one phosphorus atom into intrinsic diamond is proposed. By regulating the energy band structure of the silicon atom, the impurity energy level of the phosphorus atom can be further regulated to make it shallower. Compared with the traditional scheme of only doping one phosphorus atom, the position of the impurity energy level can be reduced by at least 0.06 eV and can reach 0.11 eV and above. At the same time, this doping system has low symmetry and is easy to achieve in growth experiments.
[0029] Figure 2 Schematically shows a structural diagram of a diamond lattice with substitutional doping of one silicon atom and one phosphorus atom in the local doping structure of an embodiment of the present disclosure.
[0030] As Figure 2 shown, this embodiment provides an n-type doped diamond, including: at least one silicon atom, at least one phosphorus atom, and a plurality of carbon atoms to form a diamond lattice.
[0031] Among them, at least one silicon atom and at least one phosphorus atom are respectively located at the lattice points of the diamond lattice.
[0032] One silicon atom and one phosphorus atom are located at adjacent lattice points;
[0033] And / or, one silicon atom and one phosphorus atom are isolated by at least two carbon atoms.
[0034] In the embodiment of the present disclosure, each carbon atom in the diamond crystal structure is covalently bonded to its four nearest neighboring carbon atoms. By doping at least one silicon atom and at least one phosphorus atom into the diamond crystal structure, these two elements can be incorporated into the diamond lattice by substitution, that is, they substitute into the positions originally occupied by carbon atoms, and do not have to exist in a certain local symmetry configuration within the diamond lattice, only need to be discretely located at the substitutional lattice points. Different from the traditional high-symmetry doping system, the introduction of phosphorus and silicon atoms in this embodiment doping system breaks the original lattice symmetry, resulting in a low-symmetry of the whole doping system, which is easier to be incorporated into the diamond. Compared with the current single use of phosphorus doping, it has a shallower impurity energy level, that is, a lower ionization energy, so it is easier to release free carriers and improve its conductivity.
[0035] For example, in the local structure of the doped diamond, there may be only one silicon atom and one phosphorus atom at the lattice points corresponding to two adjacent atoms in the crystal structure, and the two adjacent atoms share one valence electron. It is also possible that there is only one silicon atom at the lattice point in the crystal structure and one phosphorus atom at the lattice point in the crystal structure isolated by at least two carbon atoms in the doped diamond. It is also possible to have both of the following situations at the same time: one silicon atom and one phosphorus atom at the lattice points corresponding to two adjacent atoms in the crystal structure, and the two adjacent atoms share one valence electron; and one silicon atom at the lattice point in the crystal structure and one phosphorus atom at the lattice point in the crystal structure isolated by at least two carbon atoms.
[0036] Figure 3 Schematically shows the energy band structure and corresponding density of states of an intrinsic diamond and a diamond doped with one substitutional silicon atom and one substitutional phosphorus atom in the local doping structure according to an embodiment of the present disclosure.
[0037] AsFigure 2 and Figure 3 As shown in Figure 3 , on the basis of the above embodiment, when a silicon atom and a phosphorus atom are included in the crystal structure and a silicon atom and a phosphorus atom are separated by at least two carbon atoms, the ionization energy of n-type doped diamond is 0.51 eV.
[0038] In an embodiment of the present disclosure, it can be seen from Figure 3 that the left figure "pure" is intrinsic diamond, which has an obvious band gap and there is an obvious energy difference between the bottom of the conduction band and the top of the valence band. The right figure "defect" is the Figure 2 doping method, that is, the energy band diagram and density of states diagram in which the lattice points of a silicon atom in the crystal structure and the lattice points of a phosphorus atom in the crystal structure are separated by at least two carbon atoms. It can be seen from the energy band diagram that the band gap width of the energy band structure after co-doping of silicon and phosphorus decreases, and the impurity energy level of the phosphorus atom also becomes shallower and closer to the bottom of the conduction band. It can be seen from the density of states that the introduction of silicon and phosphorus impurities generates new density of states peaks near the band gap, and the contribution of silicon and phosphorus impurities to the total density of states can be seen.
[0039] On the basis of the above embodiment, when the number of at least one silicon atom and at least one phosphorus atom is one respectively, and a silicon atom and a phosphorus atom are located at adjacent lattice points, the ionization energy of n-type doped diamond is 0.46 eV.
[0040] In an embodiment of the present disclosure, when the number of at least one silicon atom and at least one phosphorus atom is one respectively, and a silicon atom and a phosphorus atom are separated by at least two carbon atoms, the ionization energy of n-type doped diamond is 0.51 eV. Therefore, the n-type doped diamond in this embodiment has a lower ionization energy.
[0041] On the basis of the above embodiment, the difference between the impurity energy level position corresponding to one silicon atom and one phosphorus atom and the impurity energy level position corresponding to one phosphorus atom is greater than or equal to 0.06 eV.
[0042] In an embodiment of the present disclosure, the introduction of silicon atoms can make the impurity energy level of phosphorus atoms shallower, that is, the donor energy level of phosphorus atoms is closer to the bottom of the conduction band. By precisely controlling the doping concentration of silicon atoms and phosphorus atoms, the impurity energy level position of phosphorus atoms can be regulated more effectively, so as to obtain a higher carrier concentration and mobility.
[0043] According to an embodiment of the present disclosure, diamond includes intrinsic diamond.
[0044] The present disclosure provides a method for preparing n-type doped diamond, including:
[0045] Obtain a diamond structure. The unit cell of the diamond structure can be regarded as being obtained by nesting two face-centered cubic lattices offset by 1 / 4 unit along the body diagonal. Each carbon atom in the diamond structure forms a regular tetrahedron structure with the corresponding four nearest neighbor carbon atoms. The unit cell contains 8 non-equivalent carbon atoms, which are respectively one-eighth of the number of corner atoms, one-half of the number of face-centered atoms, and four atoms on the body diagonal. Each atom corresponds to a lattice point of the diamond structure. An ideal undoped diamond material is composed of the above unit cells that are infinitely periodically repeated in three dimensions.
[0046] Substitute at least one silicon atom for at least one carbon atom in the diamond structure. One substituted silicon atom corresponds to one lattice point in the diamond structure.
[0047] Substitute at least one phosphorus atom for at least one carbon atom in the diamond structure. One substituted phosphorus atom corresponds to one lattice point in the diamond structure.
[0048] Among them, one silicon atom and one phosphorus atom are located at the lattice points corresponding to two adjacent carbon atoms in the diamond structure, and the two adjacent carbon atoms share valence electrons.
[0049] And / or, the lattice point of one silicon atom in the diamond structure and the lattice point of one phosphorus atom in the diamond crystal structure are separated by at least two carbon atoms.
[0050] The principle of the preparation method of the embodiment of the present disclosure is the same as that of the above-mentioned n-type doped diamond, and will not be elaborated here.
[0051] Figure 4 Schematically shows a schematic diagram of the preparation of n-type doped diamond by using the microwave chemical vapor deposition method according to the embodiment of the present disclosure.
[0052] The microwave plasma chemical vapor deposition (MPCVD) equipment mainly consists of a microwave system, a plasma reaction chamber, a vacuum system, a gas supply system, a control system, etc.
[0053] As Figure 4 shown, Step 1: Introduce a carbon source, a silicon source, a phosphorus source, and an auxiliary gas into the growth cavity. The microwave generated by the microwave generator enters the cavity through the waveguide, triggering glow discharge to ionize the reaction gas molecules to form a plasma.
[0054] Step 2: Under high temperature and below standard atmospheric pressure, active carbon atom groups are deposited on the substrate to form diamond single crystals.
[0055] Step 3: During the growth of single-crystal diamond, due to the existence of a small amount of active groups other than active carbon atom groups, such as silicon atom groups and phosphorus atom groups, the latter replace the former and participate in the diamond growth. Subsequently, silicon atoms and phosphorus atoms are uniformly and randomly incorporated into the diamond lattice, thereby preparing n-type doped diamond.
[0056] Among them, methane can be used as the carbon source, silane can be used as the silicon source, phosphine can be used as the phosphorus source, and the auxiliary gas can be hydrogen. All of the above need to use high-purity gases.
[0057] Furthermore, the total gas flow rate of the carbon source, silicon source, and phosphorus source can be controlled between 500 sccm and 1000 sccm. The flow ratio of methane to hydrogen is generally below 10%. The total flow ratio of silane and phosphine to the flow rate of methane is generally below 10%. During growth, the surface temperature of the substrate can be controlled as .
[0058] According to the embodiments of the present disclosure, epitaxial growth can be used to prepare n-type doped diamond. High temperature and high pressure can also be used to incorporate a certain amount of phosphorus-containing and silicon-containing powders into the graphite powder in a multi-anvil press to prepare n-type doped diamond.
[0059] Based on the above embodiments, a verification method for n-type doped diamond is provided, including:
[0060] Using density functional first-principles to calculate the ionization energy of n-type doped diamond.
[0061] Step 1: Construct a diamond primitive cell, and use density functional first-principles to calculate the theoretical optimal lattice constant a0; establish an intrinsic diamond supercell based on the primitive cell, and calculate the total energy E(bulk) and band gap width E g and the valence band top position E VBM . Among them, the energy band structure of the constructed intrinsic diamond is as Figure 3 shown in the left figure.
[0062] Step 2: Replace any two lattice point positions in the intrinsic diamond supercell with silicon atoms and phosphorus atoms, where the silicon atoms and phosphorus atoms are at the nearest neighbor lattice point positions and / or isolated by at least two carbon atoms. In this embodiment, taking the case where the silicon atoms and phosphorus atoms are isolated by at least two carbon atoms as an example, as Figure 2 shown. And use density functional first-principles to calculate and optimize the doped lattice structure to obtain the total energy E 0 (defect) of the electrically neutral system at this time.
[0063] Step 3: Set the net charge number of the doping system to 1+, and use the density functional first - principle calculation to optimize the lattice structure to ensure the stability of the doping system in the charged state, and obtain the total energy E of the charged system at this time 1+ (defect).
[0064] Step 4: Use the sxdefectalign software to perform the FNV (Freysoldt, Neugebauer, and Van de Walle correction) correction on the charged system to eliminate the Coulomb - related errors caused by the periodic boundary conditions and the background charge.
[0065] Step 5: Calculate the ionization energy of silicon - phosphorus co - doped diamond. The formula is as follows:
[0066]
[0067] where is the net charge of the system, is the Coulomb - related error correction, is the position of the valence - band maximum, is the total energy of the supercell, X is the dopant, q1 and q2 are the net charges, which should be 0 and 1+ in this embodiment, is the charge difference between q1 and q2, is the relevant correction term.
[0068] In the embodiment of the present disclosure, through using the density functional first - principle calculation to optimize the lattice structure, Figure 2 the theoretical ionization energy of the diamond in the silicon - phosphorus co - doped system is 0.09 eV. The ionization energy of phosphorus - doped diamond can also be calculated according to the above steps, and the theoretical ionization energy of the calculated phosphorus - doped system is 0.15 eV. If the marking method is used, taking the experimental value of the ionization energy of the phosphorus - doped system, 0.57 eV, as a reference, the corrected ionization energy of the silicon - phosphorus co - doped system is 0.51 eV.
[0069] By using the density functional first - principle calculation for the doping system with only one silicon atom and one phosphorus atom doped, where the silicon atom and the phosphorus atom are directly adjacent, the calculated ionization energy is 0.04 eV, and the corrected ionization energy after using the marking method is 0.46 eV.
[0070] By using the density functional first - principle calculation for the doping system with only one silicon atom and one phosphorus atom doped, where the silicon atom and the phosphorus atom are separated by a carbon atom, the corrected ionization energy is 1.05 eV.
[0071] Therefore, in the embodiments of the present disclosure, the ionization energy of doped diamond can be calculated quickly and accurately through the density functional first principle. At the same time, the doping methods of doped silicon atoms and phosphorus atoms are restricted except for the case where they are isolated by one carbon atom, and they can be discretely located at substitutional lattice points, having a donor energy level shallower than that of phosphorus doping.
[0072] Those skilled in the art can understand that the features recited in the various embodiments and / or claims of the present disclosure can be combined and / or combined in various ways, even if such combinations or combinations are not explicitly recited in the present disclosure. In particular, without departing from the spirit and teachings of the present disclosure, the features recited in the various embodiments and / or claims of the present disclosure can be combined and / or combined in various ways. All such combinations and / or combinations fall within the scope of the present disclosure.
[0073] The embodiments of the present disclosure have been described above. However, these embodiments are for illustrative purposes only and are not intended to limit the scope of the present disclosure. Although the embodiments have been described separately above, this does not mean that the measures in the various embodiments cannot be used advantageously in combination. The scope of the present disclosure is defined by the appended claims and their equivalents. Without departing from the scope of the present disclosure, those skilled in the art can make various substitutions and modifications, and all such substitutions and modifications should fall within the scope of the present disclosure.
Claims
1. An n-type doped diamond, characterized in that, Comprising: At least one silicon atom, at least one phosphorus atom and a plurality of carbon atoms form a diamond lattice; Wherein, the at least one silicon atom and the at least one phosphorus atom are respectively located at lattice points of the diamond lattice; A silicon atom and a phosphorus atom are located at adjacent lattice points; And / or, at least two carbon atoms are between a silicon atom and a phosphorus atom for isolation.
2. The n-type doped diamond according to claim 1, wherein, When the number of the at least one silicon atom and the at least one phosphorus atom is one respectively, and a silicon atom and a phosphorus atom are located at adjacent lattice points, the ionization energy of the n-type doped diamond is 0.46 eV.
3. The n-type doped diamond according to claim 1, wherein When the number of the at least one silicon atom and the at least one phosphorus atom is one respectively, and a silicon atom and a phosphorus atom are isolated by at least two carbon atoms, the ionization energy of the n-type doped diamond is 0.51 eV.
4. The n-type doped diamond according to claim 1, wherein The difference between the impurity energy level positions corresponding to one silicon atom and one phosphorus atom and the impurity energy level position corresponding to one phosphorus atom is greater than or equal to 0.06 eV.
5. The n-type doped diamond according to claim 1, characterized in that, The diamond includes intrinsic diamond.
6. A method for preparing n-type doped diamond, characterized in that, Comprising: Obtain a diamond structure, the unit cell of the diamond structure is obtained by nesting two face-centered cubic lattices offset by 1 / 4 unit along the body diagonal, and each carbon atom in the diamond structure forms a regular tetrahedron structure with four corresponding nearest neighbor carbon atoms; Substitute at least one silicon atom for at least one carbon atom in the diamond structure, and one substituted silicon atom corresponds to one lattice point in the diamond structure; Substitute at least one phosphorus atom for at least one carbon atom in the diamond structure, and one substituted phosphorus atom corresponds to one lattice point in the diamond structure; Wherein, a silicon atom and a phosphorus atom are located at lattice points corresponding to two adjacent carbon atoms in the diamond structure.
7. A method for preparing n-type doped diamond, characterized in that, Comprising: Obtain a diamond structure, the unit cell of the diamond structure is obtained by nesting two face-centered cubic lattices offset by 1 / 4 unit along the body diagonal, and each carbon atom in the diamond structure forms a regular tetrahedron structure with four corresponding nearest neighbor carbon atoms; Substitute at least one silicon atom for at least one carbon atom in the diamond structure, and one substituted silicon atom corresponds to one lattice point in the diamond structure; Substitute at least one phosphorus atom for at least one carbon atom in the diamond structure, and one substituted phosphorus atom corresponds to one lattice point in the diamond structure; Wherein, at least two carbon atoms are between the lattice point of a silicon atom in the diamond structure and the lattice point of a phosphorus atom in the diamond crystal structure for isolation.
8. A method for preparing n-type doped diamond, characterized in that, Comprising: Obtain a diamond structure, the unit cell of the diamond structure is obtained by nesting two face-centered cubic lattices offset by 1 / 4 unit along the body diagonal, and each carbon atom in the diamond structure forms a regular tetrahedron structure with four corresponding nearest neighbor carbon atoms; Substitute at least one silicon atom for at least one carbon atom in the diamond structure, and one substituted silicon atom corresponds to one lattice point in the diamond structure; Substitute at least one phosphorus atom for at least one carbon atom in the diamond structure, and one substituted phosphorus atom corresponds to one lattice point in the diamond structure; Wherein, a silicon atom and a phosphorus atom are located at lattice points corresponding to two adjacent carbon atoms in the diamond structure; and, a silicon atom in the lattice points of the diamond structure and a phosphorus atom in the lattice points of the diamond crystal structure are isolated by at least two carbon atoms.