Cutting-up method of substrate structure

Abstract

The invention provides a cutting-up method of a substrate structure, relates to the technical field of semiconductor manufacturing, and aims to solve the problem that the cutting-up method in the prior art can cause cracks to extend towards the interior of a glass core plate, so that the quality of a cut glass substrate is influenced. The cutting-up method of the substrate structure comprises the following steps: acquiring the substrate structure; the substrate structure comprises a glass core plate and a dielectric layer arranged on the glass core plate. Removing the stop layer in a groove of the dielectric layer; the removal stop layer comprises a first sub-layer and a second sub-layer in the direction perpendicular to the thickness of the glass core plate; removing the stop layer and arranging on one surface, deviating from the glass core plate, of the dielectric layer; and / or removing the stop layer and arranging on the glass core plate; presetting a cutting-up channel penetrating through the removal stop layer; the width of the first sub-layer is greater than that of the cutting-up channel; removing the stop layer by corrosion to obtain a processed substrate structure; and cutting up the processed substrate structure along the cutting-up channel to obtain a substrate sub-structure.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor manufacturing, and particularly to a dicing method for a substrate structure. Background Art

[0002] With the development of artificial intelligence and high-performance computing, the chip size supporting computing power has been continuously increasing, and the requirements for the substrate size have also been rapidly rising. Compared with organic substrates, glass substrates have gradually become a more concerned solution due to their superior flatness, low coefficient of thermal expansion (CTE), high stiffness, and good electrical properties. However, as a brittle material, the strength of glass is extremely sensitive to defects, especially during the manufacturing process, especially during the dicing process, there is a very high risk of failure.

[0003] In the prior art, ABF with a certain thickness is provided on two opposite surfaces of a glass core board. During the actual dicing process, the stress generated will cause cracks to appear at the cutting edge of the glass core board, and the cracks will further extend into the glass core board along the length direction of the glass core board, thereby affecting the quality of the glass substrate obtained after segmentation. Summary of the Invention

[0004] The purpose of the present invention is to provide a dicing method for a substrate structure, which is used to reduce the probability of cracks extending into the glass core board and improve the quality of the structure obtained after segmentation.

[0005] In order to achieve the above purpose, the present invention provides the following technical solutions:

[0006] The present invention provides a dicing method for a substrate structure. The dicing method for the substrate structure includes:

[0007] Obtain a substrate structure; the substrate structure includes a glass core board, a dielectric layer, and a removal stop layer; the glass core board includes a first surface and a second surface opposite to each other along its thickness direction; the dielectric layer is provided on the first surface and the second surface of the glass core board; the dielectric layer has a groove, and the groove includes an opening away from the glass core board; the removal stop layer is located in the groove; along the direction perpendicular to the thickness of the glass core board, the removal stop layer includes: a first sub-layer close to the glass core board and a second sub-layer provided on the surface of the first sub-layer away from the glass core board; the width of the first sub-layer is greater than or equal to the width of the second sub-layer; the removal stop layer is provided on the surface of the dielectric layer facing away from the glass core board; and / or, the removal stop layer is provided on the glass core board;

[0008] Preset a dicing track extending in the direction from the first surface to the second surface on the substrate structure; along the direction from the first surface to the second surface, the projection of the dicing track is located within the removal stop layer; the width of the first sub-layer is greater than the width of the dicing track, and the dicing track and the dielectric layers on both sides of the dicing track and closest to it are spaced apart or in contact; the width direction of the first sub-layer and the width direction of the dicing track are both consistent with the direction perpendicular to the thickness of the glass core board;

[0009] The stop layer is removed by etching to obtain a processed substrate structure;

[0010] The processed substrate structure is scribed along the scribe lane to obtain a plurality of spaced-apart substrate sub-structures.

[0011] In the substrate structure scribing method provided by the present invention, since the removal stop layer is located in the groove and the removal stop layer is disposed on the side of the dielectric layer facing away from the glass core board; and / or, the removal stop layer is disposed on the glass core board. Therefore, when the removal stop layer is removed by etching, the thickness of the dielectric layer closely adhering to the upper part of at least a part of the glass core board near or located on the scribe lane is thinned or becomes zero. At this time, during the process of scribing the processed substrate structure along the scribe lane, the stress generated due to scribing into the dielectric layer is smaller than the stress generated when the dielectric layer is very thick. Therefore, the damage to the glass core board caused by the stress is reduced, and further, the probability of cracks extending into the glass core board due to the stress action can be reduced, so as to improve the quality of the structure (i.e., the substrate sub-structure) obtained after segmentation. Further, when the removal stop layer is disposed on the glass core board, the process of removing the removal stop layer by etching will not affect the glass core board (for example, it will not corrode the glass core board and will not generate stress on the glass core board). Still further, the processed substrate structure is scribed along the scribe lane to obtain a plurality of spaced-apart substrate sub-structures; and, the width of the first sub-layer is greater than or equal to the width of the second sub-layer, and the width of the first sub-layer close to the glass core board is greater than the width of the scribe lane. Taking the boundary line of the first sub-layer (or the side wall of the groove where the first sub-layer is located) as the demarcation line, wherein, the substrate sub-structure includes a substrate unit and a crack propagation unit distributed along its length direction. The substrate unit is the part for normally forming components in the later stage or for subsequent packaging, and the crack propagation unit is the area between the boundary line of the first sub-layer (or the side wall of the groove where the first sub-layer is located) and the scribe edge of the substrate sub-structure. At this time, even if cracks are generated during the process of scribing the processed substrate structure along the scribe lane, since the above crack propagation unit reserves space for the crack propagation, only a small part of the cracks or no cracks extend to the substrate unit, and at this time, the influence of the cracks on the substrate unit is very small or basically none. Based on this, the probability of cracks extending into the glass core board is further reduced, and the quality of the structure (i.e., the substrate sub-structure) obtained after segmentation is improved.

[0012] In one implementation, removing the exposed removal stop layer by etching includes: removing the exposed removal stop layer by wet etching.

[0013] In one implementation, the removal stop layer includes at least one or more of a copper removal stop layer, a zinc removal stop layer, a nickel removal stop layer, or a silver removal stop layer.

[0014] In one implementation, the dielectric layer includes at least one or more of ABF, PI, or ABF-like materials.

[0015] In one implementation, along the direction from the first surface to the second surface, the center line of the scribing lane coincides with the center line of the removal stop layer.

[0016] In one implementation, the glass core board has through holes that penetrate the glass core board along the direction from the first surface to the second surface;

[0017] The substrate structure further includes:

[0018] A conductive layer formed on the inner wall of the through hole; the conductive layer located in the through hole has pores; the pores penetrate the glass core board along the direction from the first surface to the second surface;

[0019] A plugging material formed on the conductive layer and located within the pores;

[0020] The dielectric layer close to the glass core board is disposed on the first surface and the second surface of the glass core board, and covers the conductive layer and the plugging material located in the opening area of the through hole;

[0021] A circuit layer disposed on the surface of the dielectric layer away from the glass core board;

[0022] The dielectric layer and the circuit layer disposed in sequence along the direction away from the glass core board form a combined structure, and the substrate structure includes at least one combined structure.

[0023] In one implementation, scribing the substrate structure along the scribing lane to obtain a plurality of spaced-apart substrate sub-structures includes: scribing the substrate structure along the scribing lane using a soft knife or a laser to obtain a plurality of spaced-apart substrate sub-structures.

[0024] In one implementation, the removal stop layer is disposed on the surface of the dielectric layer away from the glass core board, and the thickness of the dielectric layer between the removal stop layer and the glass core board is greater than 0 microns and less than or equal to 50 microns.

[0025] In one implementation, the difference between the width of the first sub-layer and the width of the scribing lane is greater than or equal to 10 microns and less than or equal to 300 microns.

[0026] In one implementation, the substrate sub-structure includes substrate units and crack propagation units distributed along the length direction of the substrate sub-structure; the crack propagation unit is the area between the boundary line of the first sub-layer and the scribed edge of the substrate sub-structure. Description of the Drawings

[0027] The drawings described herein are used to provide a further understanding of the present invention, and constitute a part of the present invention. The schematic embodiments of the present invention and their descriptions are used to explain the present invention and do not constitute an improper limitation of the present invention. In the drawings:

[0028] Figure 1 It is a cross-sectional view after scribing of the substrate structure in the prior art;

[0029] Figure 2 It is a relationship diagram of the substrate structure and the substrate sub-structure in the embodiment of the present invention;

[0030] Figure 3 It is the C-C' cross-section during the scribing process of the substrate structure in Example 1 of the embodiment of the present invention Figure 1 ;

[0031] Figure 4 It is the C-C' cross-section during the scribing process of the substrate structure in Example 1 of the embodiment of the present invention Figure 2 ;

[0032] Figure 5 It is the C-C' cross-section during the scribing process of the substrate structure in Example 1 of the embodiment of the present invention Figure 3 ;

[0033] Figure 6 It is in the embodiment of the present invention Figure 5 The enlarged schematic diagram of part of the structure;

[0034] Figure 7 It is the C-C' cross-section during the scribing process of the substrate structure in Example 2 of the embodiment of the present invention Figure 1 ;

[0035] Figure 8 It is the C-C' cross-section during the scribing process of the substrate structure in Example 2 of the embodiment of the present invention Figure 2 ;

[0036] Figure 9 It is the C-C' cross-section during the scribing process of the substrate structure in Example 2 of the embodiment of the present invention Figure 3 ;

[0037] Figure 10 It is in the embodiment of the present invention Figure 9 The enlarged schematic diagram of part of the structure;

[0038] Figure 11 It is the C-C' cross-section during the scribing process of the substrate structure in Example 3 of the embodiment of the present invention Figure 1 ;

[0039] Figure 12 It is the C-C' cross-section during the scribing process of the substrate structure in Example 3 of the embodiment of the present invention Figure 2 ;

[0040] Figure 13 It is the C-C' cross-section during the scribing process of the substrate structure in Example 3 of the embodiment of the present invention Figure 3 ;

[0041] Figure 14 In the embodiments of the present invention Figure 13 is an enlarged schematic diagram of a partial structure;

[0042] Figure 15 is the C-C' cross-section of the substrate structure in Example 4 during the scribing process in the embodiments of the present invention Figure 1 ;

[0043] Figure 16 is the C-C' cross-section of the substrate structure in Example 4 during the scribing process in the embodiments of the present invention Figure 2 ;

[0044] Figure 17 is the C-C' cross-section of the substrate structure in Example 4 during the scribing process in the embodiments of the present invention Figure 3 ;

[0045] Figure 18 In the embodiments of the present invention Figure 17 is an enlarged schematic diagram of a partial structure.

[0046] Reference numerals:

[0047] 1 - Substrate structure, 10 - Glass core board, 11 - Dielectric layer, 110 - Groove; 12 - Removal stop layer, 120 - First sub-layer, 121 - Second sub-layer; 13 - Plug hole stack, 14 - Circuit layer; 15 - Substrate sub-structure, 150 - Substrate unit, 151 - Crack propagation unit, 152 - Stress concentration area, 153 - Stress release area; 2 - Scribing lane, 3 - Crack. Detailed implementation manners

[0048] For the convenience of clearly describing the technical solutions of the embodiments of the present invention, in the embodiments of the present invention, terms such as "first" and "second" are used to distinguish identical or similar items with basically the same functions and effects. For example, the first threshold and the second threshold are only used to distinguish different thresholds, and no limitation is imposed on their sequence. Those skilled in the art can understand that terms such as "first" and "second" do not limit the quantity and execution order, and terms such as "first" and "second" do not necessarily limit being different.

[0049] It should be noted that in the present invention, words such as "exemplary" or "for example" are used to represent examples, illustrations or explanations. Any embodiment or design solution described as "exemplary" or "for example" in the present invention should not be construed as being more preferred or having more advantages than other embodiments or design solutions. Exactly, using words such as "exemplary" or "for example" aims to present relevant concepts in a specific manner.

[0050] In the present invention, "at least one" means one or more, and "a plurality" means two or more. "And / or" describes the association relationship of associated objects and indicates that there can be three relationships. For example, A and / or B can represent: A exists alone, A and B exist simultaneously, or B exists alone, where A and B can be singular or plural. The character " / " generally indicates that the associated objects before and after are in an "or" relationship. "At least one (item)" or its similar expression refers to any combination of these items, including any combination of a single item or plural items. For example, at least one (item) of a, b, or c can represent: a, b, c, the combination of a and b, the combination of a and c, the combination of b and c, or the combination of a, b, and c, where a, b, and c can be single or multiple.

[0051] Combined with the background art, during the scribing process, especially when the glass is cut by tools such as lasers and mechanical blades, due to reasons such as heat and mechanical stress, the edge of the glass substrate may show a reverse or pulling-back phenomenon in the direction opposite to the scribing direction. The edge area of the glass substrate after cutting may deform or slightly shrink due to temperature changes or mechanical forces during the cutting process, resulting in a pulling-back effect at the cutting edge. This effect is a factor that needs to be controlled during the cutting of glass because it may lead to a decrease in the accuracy of the cutting surface of the glass substrate, affect the cutting quality, and may even cause cracks or breakage in the glass substrate after scribing.

[0052] Furthermore, referring to Figure 1 , in the prior art, in the substrate structure 1, the dielectric layer 11 covers the glass core board 10. During actual scribing, the soft knife directly scribes the dielectric layer 11 and the glass core board 10 from the first surface to the second surface of the glass core board 10 to obtain the separated substrate sub-structures. During this process, there is a stress concentration at the scribing corner (such as the stress concentration area 152 shown in Figure 1 ). This stress cannot be released outward because there is a dielectric layer 11 above the glass core board 10, so this stress will be released into the interior of the glass core board 10, which will cause cracks 3 in the glass core board 10 and affect its reliability.

[0053] To solve the above technical problems, an embodiment of the present invention provides a method for scribing a substrate structure.

[0054] Combined with Figures 2 to 18 , the method for scribing the substrate structure includes:

[0055] Step 101: Obtain the substrate structure 1; the substrate structure 1 includes a glass core board 10, a dielectric layer 11, and a removal stop layer 12; the glass core board 10 includes a first surface and a second surface opposite to each other in its thickness direction; the dielectric layer 11 is disposed on the first surface and the second surface of the glass core board 10; the dielectric layer 11 has a groove 110, and the groove 110 includes an opening away from the glass core board 10. For example: along the thickness direction of the glass core board 10, the groove 110 may not penetrate the dielectric layer 11 on a single side (as shown in Figure 4 ), and the groove 110 may also penetrate the dielectric layer 11 on a single side (as shown in Figure 12 ). The removal stop layer 12 is located in the groove 110. At this time, the removal stop layer 12 is disposed on the side of the dielectric layer 11 facing away from the glass core board 10 (as shown in Figure 3 ); and / or, the removal stop layer 12 is disposed on the glass core board 10 (as shown in Figure 11 ). Further, referring to Figure 7 , along the direction perpendicular to the thickness of the glass core board 10, the removal stop layer 12 includes: a first sub-layer 120 close to the glass core board 10 and a second sub-layer 121 disposed on the side of the first sub-layer 120 facing away from the glass core board 10, and the width of the first sub-layer 120 is greater than or equal to the width of the second sub-layer 121.

[0056] Exemplarily, the above dielectric layer includes at least one or more of ABF, PI (Polyimide, translated as: polyimide), or ABF-like. Among them, ABF is an interlayer insulating resin material for substrates developed by Ajinomoto Co., Inc. of Japan, and ABF-like is an interlayer insulating resin with the same function as ABF developed by other material suppliers.

[0057] Step 102: Preset a scribe line 2 extending in the direction from the first surface to the second surface on the substrate structure 1; along the direction from the first surface to the second surface, the projection of the scribe line 2 is located within the removal stop layer 12; exemplarily, the scribe line 2 is located within the removal stop layer 12. Combining the previous description, since the removal stop layer is located within the groove, the scribe line penetrates the groove.

[0058] Further, the width of the first sub-layer 120 is greater than the width of the scribe line 2, and the width directions of both the first sub-layer 120 and the scribe line 2 are consistent with the direction perpendicular to the thickness of the glass core board 10, that is, the A direction in Figure 4 . Still further, the scribe line 2 is spaced apart from or abuts against the dielectric layer 11 located on both sides of the scribe line 2 and closest to it.

[0059] It should be noted that regarding the order of Step 101 and Step 102, Step 101 can be executed first and then Step 102, or Step 102 can be executed first and then Step 101.

[0060] Exemplarily, when step 101 is executed first and then step 102, the substrate structure can be fabricated first, and then the position and size of the dicing lane can be determined according to the position of the removal stop layer in the substrate structure and the size of the first sub-layer included in the removal stop layer.

[0061] When step 102 is executed first and then step 101, the number and size of the substrate sub-structures obtained by dicing can be preset in advance according to the size of the substrate structure to be fabricated. At this time, the dicing lane can be basically determined. Then, according to the position and size of the dicing lane, the position of the removal stop layer in the substrate structure and the size of the first sub-layer included in the removal stop layer can be determined.

[0062] As a possible implementation, the difference between the width of the first sub-layer and the width of the dicing lane is greater than or equal to 10 μm and less than or equal to 300 μm. Exemplarily, the difference can be 10 μm, 20 μm, 50 μm, 80 μm, 100 μm, 120 μm, 150 μm, 180 μm, 200 μm, 220 μm, 250 μm, 280 μm or 300 μm, etc.

[0063] Step 103: Remove the removal stop layer 12 by etching to obtain the processed substrate structure; it should be noted that when the removal stop layer 12 is removed by etching, the etchant will not damage the glass core board 10. In other words, in terms of material selection of the above removal stop layer 12, the etchant will only act on the removal stop layer 12 and will not corrode the glass core board 10. Exemplarily, the removal stop layer 12 includes at least one or more of a copper removal stop layer, a zinc removal stop layer, a nickel removal stop layer or a silver removal stop layer; when the material of the removal stop layer 12 is copper, the copper-clad rate of the substrate structure 1 can be adjusted according to actual needs.

[0064] Exemplarily, the removal stop layer 12 is removed by wet etching, and after the removal stop layer 12 is removed, the glass core board 10 and / or the dielectric layer 11 are exposed to obtain the processed substrate structure.

[0065] Step 104: Dice the processed substrate structure along the dicing lane 2 to obtain a plurality of spaced-apart substrate sub-structures 15.

[0066] Exemplarily, the processed substrate structure is diced along the dicing lane 2 by using a soft knife or a laser to obtain a plurality of spaced-apart substrate sub-structures 15.

[0067] See Figures 2 to 18, in the scribing method of the substrate structure provided by the embodiments of the present invention, since the removal stop layer 12 is located in the groove 110 and the removal stop layer 12 is disposed on the surface of the dielectric layer 11 facing away from the glass core board 10; and / or, the removal stop layer 12 is disposed on the glass core board 10. Therefore, when the removal stop layer 12 is removed by etching, the thickness of the dielectric layer 11 closely attached to the upper part of at least a part of the glass core board 10 near or located in the scribe line 2 is thinned or becomes zero. At this time, during the process of scribing the substrate structure along the scribe line 2, the stress generated due to scribing the dielectric layer 11 is reduced compared with the stress generated when the dielectric layer 11 is very thick. Therefore, the damage to the glass core board 10 caused by the stress is reduced, and further the probability of the crack 3 extending into the glass core board 10 due to the stress action can be reduced, so as to improve the quality of the structure (i.e., the substrate sub-structure 15) obtained after segmentation. Further, when the removal stop layer 12 is disposed on the glass core board 10, the process of removing the removal stop layer 12 by etching will not affect the glass core board 10 (for example, will not etch the glass core board 10 and will not generate stress on the glass core board 10). Still further, the substrate structure is scribed along the scribe line 2 to obtain a plurality of substrate sub-structures 15 distributed at intervals; and, the width of the first sub-layer is greater than or equal to the width of the second sub-layer, and the width of the first sub-layer 120 close to the glass core board 10 is greater than the width of the scribe line 2. Taking the boundary line of the first sub-layer 120 as the demarcation line (or taking the side wall of the groove 110 where the first sub-layer 120 is located as the demarcation line), wherein, the substrate sub-structure 15 includes a substrate unit 150 and a crack propagation unit 151 distributed along its length direction, the substrate unit 150 is the part for normally forming components in the later stage or for subsequent packaging, and the crack propagation unit 151 is the area between the boundary line of the first sub-layer 120 (or the side wall of the groove 110 where the first sub-layer 120 is located) and the scribe edge of the substrate sub-structure 15. At this time, even if a crack 3 is generated during the process of scribing the substrate structure along the scribe line 2, since the above crack propagation unit 151 reserves space for the expansion of the crack 3, only a small part of the crack 3 or no crack 3 extends to the substrate unit 150, and at this time, the influence of the crack 3 on the substrate unit 150 is very small or basically none. Based on this, the probability of the crack 3 extending into the glass core board 10 is further reduced, and the quality of the structure (i.e., the substrate sub-structure 15) obtained after segmentation is improved.

[0068] As a possible implementation, the removal stop layer 12 is located on at least one surface of the glass core board 10.

[0069] In one example, when the removal stop layer 12 is only located on the first side or the second side of the glass core board 10, for a substrate sub-structure 15, it is divided into an upper part and a lower part along the length direction of the substrate sub-structure 15, and the upper part or the lower part has a crack propagation unit 151. At this time, even if cracks 3 are generated during the process of dicing the substrate structure along the dicing track 2, since the above-mentioned crack propagation unit 151 reserves space for the expansion of the cracks 3, only a small part of the cracks 3 or no cracks 3 expand to the upper part or the lower part of the substrate unit 150. Compared with the prior art where the cracks 3 expand in the entire area of the substrate unit 150, the solution provided in this application reduces the area (or size) where the cracks 3 expand, and improves the quality of the structure (i.e., the substrate sub-structure 15) obtained after segmentation.

[0070] In another example, when the removal stop layer 12 is located on the first side and the second side of the glass core board 10, for a substrate sub-structure 15, it is divided into two parts along the length direction of the substrate sub-structure 15, and both parts have crack propagation units 151. At this time, the probability of the cracks 3 extending into the glass core board 10 can be further reduced, so as to further improve the quality of the structure (i.e., the substrate sub-structure 15) obtained after segmentation.

[0071] As a possible implementation, when the removal stop layer is disposed on the side of the dielectric layer facing away from the glass core board, the thickness of the dielectric layer between the removal stop layer and the glass core board is greater than 0 micrometers and less than or equal to 50 micrometers. Exemplarily, the thickness can be 0.1 micrometer, 0.5 micrometer, 1 micrometer, 5 micrometers, 10 micrometers, 15 micrometers, 20 micrometers, 25 micrometers, 30 micrometers, 35 micrometers, 40 micrometers, 45 micrometers or 50 micrometers, etc. When the thickness of the dielectric layer between the removal stop layer and the glass core board satisfies the above value range, the damage to the glass core board caused by the stress generated by dicing the dielectric layer can be reduced, so as to reduce the probability of cracks generated by the stress acting on the glass core board extending into the glass core board, and improve the quality of the structure (i.e., the substrate sub-structure) obtained after segmentation.

[0072] As a possible implementation, along the direction from the first side to the second side, the center line of the dicing track 2 coincides with the center line of the removal stop layer 12. At this time, the structures on both sides of the dicing track 2 can be uniformly stressed, and the sizes of the crack propagation units 151 included in the two substrate sub-structures 15 obtained by dicing are basically equal or equal, so as to reserve enough space for the expansion of the cracks 3, thereby ensuring the quality and reliability of the two substrate sub-structures 15.

[0073] As a possible implementation, refer to Figure 3, the glass core board 10 has a through hole penetrating the glass core board 10 in the direction from the first surface to the second surface. The substrate structure 1 further includes: a conductive layer, a via filling material, and a circuit layer 14. The conductive layer is formed on the inner wall of the through hole, and the conductive layer located inside the through hole has pores, and the pores penetrate the glass core board 10 in the direction from the first surface to the second surface. The via filling material is formed on the conductive layer and located inside the pores; the dielectric layer 11 close to the glass core board 10 is disposed on the first surface and the second surface of the glass core board 10, and covers the conductive layer and the via filling material located in the opening area of the through hole. The circuit layer 14 is disposed on one surface of the dielectric layer 11 away from the glass core board 10; the dielectric layer 11 and the circuit layer 14 disposed in sequence in the direction away from the glass core board 10 form a combined structure, and the substrate structure 1 includes at least one combined structure.

[0074] Exemplarily, the above through hole is a TGV (Through-Glass Via) hole.

[0075] The material of the conductive layer is not limited to metal (such as copper), and other materials that meet the actual requirements can also be used.

[0076] The size, shape, etc. of the pores only need to meet the actual requirements and will not be specifically limited here.

[0077] As a possible implementation, the via filling material can adopt a material with a coefficient of thermal expansion matching that of other parts in the substrate structure, such as a high-temperature resistant resin material. In this way, during the subsequent high-temperature lamination process of manufacturing the substrate structure, it can be ensured that the via filling material will not cause the board to burst due to the mismatch of the expansion coefficient, and avoid problems such as the metal circuit on the surface of the via filling material bursting and causing an open circuit, which affect the reliability. For a two-layer circuit board, since high-temperature lamination is not required, solder mask green oil with a relatively large coefficient of thermal expansion can be used as the via filling material. It should be understood that the specific material of the via filling material can also be adjusted according to the actual requirements of the prepared substrate structure. As a possible implementation, the above via filling material is a dry film type via filling resin material, such as ABF resin and RCC resin.

[0078] As another possible implementation, the above via filling material can also be a conductive material, such as a conductive metal. The above conductive metal can be copper, tungsten, titanium, etc. Alternatively, the material of the via filling material is the same as that of the conductive layer, and in this case, a structure is formed inside the through hole. It should be noted that for the convenience of identification in the drawings, the conductive layer and the via filling material are combined into one structure and defined as the via stack 13.

[0079] The above circuit layer can include an inner circuit layer and an outer circuit layer, and the specific division and structure thereof will not be described in detail here as long as they can meet the actual requirements.

[0080] As a possible implementation, after the dielectric layer covers the conductive layer and the plugging material in the via opening area, in order to achieve electrical connection between the circuit layer and the conductive layer, a communication hole is formed in the dielectric layer, and the communication hole penetrates through to the conductive layer at the via. Then, a conductive material is filled in the communication hole to form a connector that is electrically connected to the conductive layer. One end of the connector is electrically connected to the circuit layer, and the other end is electrically connected to the conductive layer to ensure electrical connection and conduction of the circuit layers on both sides of the substrate structure.

[0081] The following describes the partitioning method of the substrate structure by taking substrate structures with different structures as examples. It should be noted that the following description is only for understanding and is not used for specific limitation.

[0082] Example 1: Refer to Figures 3 to 6 , Step 101: Obtain substrate structure 1;

[0083] Refer to Figure 3 and Figure 4 , Substrate structure 1 includes a glass core board 10, a dielectric layer 11, and a removal stop layer 12; the glass core board 10 includes a first surface and a second surface that are opposite to each other in its thickness direction; the dielectric layer 11 is disposed on the first surface and the second surface of the glass core board 10; the dielectric layer 11 has a groove 110, and the opening of the groove 110 is away from the glass core board 10; the removal stop layer 12 is located in the groove 110; the removal stop layer 12 is disposed on the surface of the dielectric layer 11 facing away from the glass core board 10. Further, removal stop layers 12 are disposed on both sides of the substrate structure 1. Still further, the thickness of the dielectric layer 11 between the removal stop layer 12 and the glass core board 10 is greater than 0 microns and less than or equal to 50 microns, and the thickness direction of the dielectric layer 11 is the same as the thickness direction of the glass core board 10.

[0084] Along the direction perpendicular to the thickness of the glass core board 10, the removal stop layer 12 includes: a first sub-layer 120 close to the glass core board 10 and a second sub-layer 121 disposed on the surface of the first sub-layer 120 facing away from the glass core board 10, and the width of the first sub-layer 120 is equal to the width of the second sub-layer 121. That is, the cross-sectional shape of the removal stop layer 12 is a rectangle. The width directions of the first sub-layer 120 and the second sub-layer 121 are both perpendicular to the thickness direction of the glass core board 10, that is, the Figure 3 A direction in Figures 3 to 6 . It should be noted that since the width of the first sub-layer 120 is equal to the width of the second sub-layer 121, the two layers are not distinguished in

[0085] Step 102: Refer to Figure 3 and Figure 4, a scribing channel 2 extending in the direction from the first surface to the second surface is preset on the substrate structure 1; along the direction from the first surface to the second surface, the projection of the scribing channel 2 is located within the removal stop layer 12 (that is, the scribing channel 2 penetrates through the groove 110, and the projection of the scribing channel 2 is located within the groove); wherein, the width of the first sub-layer 120 is greater than the width of the scribing channel 2, and the width directions of both the first sub-layer 120 and the scribing channel 2 are consistent with the direction perpendicular to the thickness of the glass core board 10, that is, attached Figure 4 in the A direction in

[0086] Step 103: Refer to Figure 3 and Figure 4 , and the removal stop layer 12 is removed by wet etching to expose the dielectric layer 11 to obtain a processed substrate structure.

[0087] Step 104: Refer to Figure 4 and Figure 5 , and a soft knife is used to scribe the processed substrate structure along the scribing channel 2 to obtain a plurality of spaced-apart substrate sub-structures 15. Specifically, a soft knife is used to scribe the remaining dielectric layer 11 and the glass core board 10 along the scribing channel 2 to obtain a plurality of spaced-apart substrate sub-structures 15.

[0088] Refer to Figure 5 and Figure 6 , taking the boundary line of the first sub-layer 120 as the dividing line (or taking the side wall of the groove 110 where the first sub-layer 120 is located as the dividing line), wherein, the substrate sub-structure 15 includes a substrate unit 150 and a crack propagation unit 151 distributed along its length direction, the substrate unit 150 is the part for normally forming components later or for subsequent packaging, and the crack propagation unit 151 is the area between the boundary line of the first sub-layer 120 (or the side wall of the groove 110 where the first sub-layer 120 is located) and the scribing edge of the substrate sub-structure 15. At this time, even if cracks 3 are generated during the process of scribing the processed substrate structure along the scribing channel 2, since the above-mentioned crack propagation unit 151 reserves space for the expansion of the cracks 3, only a small part of the cracks 3 or no cracks 3 extend to the substrate unit 150, and at this time, the influence of the cracks 3 on the substrate unit 150 is very small or basically none. Based on this, the probability of the cracks 3 extending into the glass core board 10 is reduced, and the quality of the structure (i.e., the substrate sub-structure 15) obtained after segmentation is improved.

[0089] Furthermore, since the thickness of the dielectric layer 11 disposed closely above the glass core plate 10 within the crack propagation unit 151 is relatively thin, during the scribing process, even if there is stress concentration at the corners, the impact on the reliability of the substrate unit 150 included in the substrate sub-structure 15 is reduced compared to the prior art where the dielectric layer 11 is very thick. That is, the stress concentration region 152 shown in the prior art Figure 1 can be approximately regarded as the stress release region 153 in the present application, reducing stress concentration, thereby reducing the probability of cracks 3 being generated inside the glass core plate 10 due to stress concentration.

[0090] Example 2: Refer to Figures 7 to 10 , step 101: Obtain the substrate structure 1;

[0091] Refer to Figure 7 and Figure 8 , the substrate structure 1 includes a glass core plate 10, a dielectric layer 11, and a removal stop layer 12; the glass core plate 10 includes a first surface and a second surface opposite to each other along its thickness direction; the dielectric layer 11 is disposed on the first surface and the second surface of the glass core plate 10; the dielectric layer 11 has a groove 110, and the mouth of the groove 110 is far from the glass core plate 10; the removal stop layer 12 is located within the groove 110; the removal stop layer 12 is disposed on the surface of the dielectric layer 11 facing away from the glass core plate 10. Further, removal stop layers 12 are disposed on both sides of the substrate structure 1. Still further, the thickness of the dielectric layer 11 between the removal stop layer 12 and the glass core plate 10 is greater than 0 microns and less than or equal to 50 microns, and the thickness direction of the dielectric layer 11 is the same as the thickness direction of the glass core plate 10.

[0092] Along the direction perpendicular to the thickness of the glass core plate 10, the removal stop layer 12 includes: a first sub-layer 120 close to the glass core plate 10 and a second sub-layer 121 disposed on the surface of the first sub-layer 120 facing away from the glass core plate 10, and the width of the first sub-layer 120 is greater than the width of the second sub-layer 121. The width directions of the first sub-layer 120 and the second sub-layer 121 are both perpendicular to the thickness direction of the glass core plate 10, that is, the Figure 7 A direction in

[0093] Step 102: Refer to Figure 7 and Figure 8 , preset a scribing path 2 extending along the direction from the first surface to the second surface on the substrate structure 1; along the direction from the first surface to the second surface, the projection of the scribing path 2 is located within the removal stop layer 12 (that is, the scribing path 2 penetrates the groove 110, and the projection of the scribing path 2 is located within the groove); wherein, the width of the first sub-layer 120 is greater than the width of the scribing path 2, and the width directions of the first sub-layer 120 and the scribing path 2 are both the same as the direction perpendicular to the thickness of the glass core plate 10, that is, the Figure 7in the A direction. Further, the difference between the width of the first sub-layer 120 and the width of the scribing track 2 is greater than or equal to 10 microns and less than or equal to 300 microns. Still further, along the direction from the first surface to the second surface, the center line of the scribing track 2 coincides with the center line of the removal stop layer 12. Additionally, the width of the second sub-layer 121 is greater than or equal to the width of the scribing track 2. At this time, the scribing track 2 is spaced apart from or abuts against the dielectric layers 11 located on both sides of the scribing track 2 and closest to it. Figure 7 In this case, the width of the second sub-layer 121 is equal to the width of the scribing track 2, and the scribing track 2 abuts against the dielectric layers 11 located on both sides of the scribing track 2 and closest to it.

[0094] Step 103: Refer to Figure 7 and Figure 8 , and use wet etching to remove the removal stop layer 12 to expose the dielectric layer 11 to obtain the processed substrate structure.

[0095] Step 104: Refer to Figure 8 and Figure 9 , and use a soft knife to scribe the processed substrate structure along the scribing track 2 to obtain a plurality of spaced-apart substrate sub-structures 15. Specifically, use a soft knife to scribe the remaining dielectric layer 11 and the glass core board 10 along the scribing track 2 to obtain a plurality of spaced-apart substrate sub-structures 15.

[0096] Refer to Figure 9 and Figure 10 , with the boundary line of the first sub-layer 120 as the dividing line (or with the side wall of the groove 110 where the first sub-layer 120 is located as the dividing line). Among them, the substrate sub-structure 15 includes substrate units 150 and crack propagation units 151 distributed along its length direction. The substrate units 150 are the parts for forming components normally in the later stage or for subsequent packaging, and the crack propagation units 151 are the regions between the boundary line of the first sub-layer 120 (or the side wall of the groove 110 where the first sub-layer 120 is located) and the scribing edge of the substrate sub-structure 15. At this time, even if cracks 3 are generated during the process of scribing the processed substrate structure along the scribing track 2, since the above crack propagation units 151 reserve space for the expansion of the cracks 3, only a small part of the cracks 3 or no cracks 3 extend to the substrate units 150. At this time, the influence of the cracks 3 on the substrate units 150 is very small or basically none. Based on this, the probability of the cracks 3 extending into the glass core board 10 is reduced, and the quality of the structure obtained after segmentation (i.e., the substrate sub-structure 15) is improved.

[0097] Furthermore, since the thickness of the dielectric layer 11 disposed closely above the glass core board 10 within the crack propagation unit 151 is relatively thin, during the scribing process, even if stress concentration exists at the corners, the impact on the reliability of the substrate unit 150 included in the substrate sub-structure 15 is reduced compared to the prior art where the dielectric layer 11 is very thick. That is, in the prior art Figure 1 the stress concentration region 152 shown can be approximately regarded as the stress release region 153 in the present application, reducing stress concentration, thereby decreasing the probability of cracks 3 being generated inside the glass core board 10 due to stress concentration.

[0098] Example 3: Refer to Figures 11 to 14 , step 101: Obtain the substrate structure 1;

[0099] Refer to Figure 11 and Figure 12 , the substrate structure 1 includes a glass core board 10, a dielectric layer 11, and a removal stop layer 12; the glass core board 10 includes a first surface and a second surface opposite to each other along its thickness direction; the dielectric layer 11 is disposed on the first surface and the second surface of the glass core board 10; the dielectric layer 11 has a groove 110 penetrating through the dielectric layer 11 located on a single surface along the thickness direction of the glass core board 10, and one of the openings of the groove 110 is away from the glass core board 10; the removal stop layer 12 is located within the groove 110 and is disposed on the glass core board 10. At this time, for the first surface (or the second surface), the dielectric layer 11 is respectively located on both sides of the removal stop layer 12. Further, removal stop layers 12 are disposed on both sides of the substrate structure 1.

[0100] Along the direction perpendicular to the thickness of the glass core board 10, the removal stop layer 12 includes: a first sub-layer 120 close to the glass core board 10 and a second sub-layer 121 disposed on a surface of the first sub-layer 120 away from the glass core board 10, and the width of the first sub-layer 120 is equal to the width of the second sub-layer 121. That is, the cross-sectional shape of the removal stop layer 12 is a rectangle. The width directions of both the first sub-layer 120 and the second sub-layer 121 are perpendicular to the thickness direction of the glass core board 10, that is, the A direction in Figure 11 . It should be noted that since the width of the first sub-layer 120 is equal to the width of the second sub-layer 121, the two layers are not distinguished in Figures 11 to 14 and are labeled as the removal stop layer 12.

[0101] Step 102: Refer to Figure 11 and Figure 12, a scribing channel 2 extending in the direction from the first surface to the second surface is preset on the substrate structure 1; along the direction from the first surface to the second surface, the projection of the scribing channel 2 is located within the removal stop layer 12 (i.e., the scribing channel 2 penetrates through the groove 110, and the projection of the scribing channel 2 is located within the groove); wherein, the width of the first sub-layer 120 is greater than the width of the scribing channel 2, and the width directions of both the first sub-layer 120 and the scribing channel 2 are consistent with the direction perpendicular to the thickness of the glass core board 10, that is, Figure 11 the A direction in

[0102] . Further, the difference between the width of the first sub-layer 120 and the width of the scribing channel 2 is greater than or equal to 10 microns and less than or equal to 300 microns. Still further, along the direction from the first surface to the second surface, the center line of the scribing channel 2 coincides with the center line of the removal stop layer 12. At this time, the scribing channel 2 and the dielectric layers 11 on both sides of the scribing channel 2 and closest to it are spaced apart. Figure 11 and Figure 12 , wet etching is used to remove the removal stop layer 12 to expose the glass core board 10, so as to obtain the processed substrate structure.

[0103] Step 104: Refer to Figure 12 and Figure 13 , a soft knife is used to scribe the glass core board 10 of the processed substrate structure along the scribing channel 2, so as to obtain a plurality of spaced-apart substrate sub-structures 15.

[0104] Refer to Figure 13 and Figure 14 , taking the boundary line of the first sub-layer 120 (or the side wall of the groove 110 where the first sub-layer 120 is located) as the demarcation line. Among them, the substrate sub-structure 15 includes a substrate unit 150 and a crack propagation unit 151 distributed along its length direction. The substrate unit 150 is the part for forming components normally in the later stage or for subsequent packaging, and the crack propagation unit 151 is the area between the boundary line of the first sub-layer 120 (or the side wall of the groove 110 where the first sub-layer 120 is located) and the scribing edge of the substrate sub-structure 15. At this time, even if a crack 3 is generated during the process of scribing the processed substrate structure along the scribing channel 2, since the above crack propagation unit 151 reserves space for the expansion of the crack 3, only a small part of the crack 3 or no crack 3 extends to the substrate unit 150. At this time, the influence of the crack 3 on the substrate unit 150 is very small or basically none. Based on this, the probability of the crack 3 extending into the glass core board 10 is reduced, and the quality of the structure (i.e., the substrate sub-structure 15) obtained after segmentation is improved.

[0105] Furthermore, there is no dielectric layer 11 closely attached to the glass core board 10 above the glass core board 10 within the crack propagation unit 151. Therefore, during the dicing process, even if there is stress concentration at the corners, or even if the corners break, it does not affect the reliability of the substrate unit 150 included in the substrate sub-structure 15, and thus the reliability of the substrate sub-structure 15 can be ensured. That is, the stress concentration region 152 shown in the prior art Figure 1 becomes the stress release region 153 shown in the present application Figure 14 , thereby avoiding the problem of cracks 3 being generated inside the glass core board 10 due to stress concentration. Further, when dicing after removing the dielectric layer 11 in contact with the glass core board 10 within the crack propagation unit 151, the probability of delamination and cracking between the dielectric layer 11 and the glass core board 10 can be reduced.

[0106] Example 4: Refer to Figures 15 to 18 , Step 101: Obtain the substrate structure 1;

[0107] Refer to Figure 15 and Figure 16 , the substrate structure 1 includes a glass core board 10, a dielectric layer 11, and a removal stop layer 12; the glass core board 10 includes a first surface and a second surface opposite to each other in its thickness direction; the dielectric layer 11 is disposed on the first surface and the second surface of the glass core board 10; the dielectric layer 11 has a groove 110 that penetrates the dielectric layer 11 on a single surface along the thickness direction of the glass core board 10, and one of the openings of the groove 110 is away from the glass core board 10; the removal stop layer 12 is located within the groove 110, and the removal stop layer 12 is disposed on the glass core board 10. At this time, for the first surface (or the second surface), the dielectric layer 11 is respectively located on both sides of the removal stop layer 12. Further, the removal stop layer 12 is disposed on both sides of the substrate structure 1.

[0108] Along the direction perpendicular to the thickness of the glass core board 10, the removal stop layer 12 includes: a first sub-layer 120 close to the glass core board 10 and a second sub-layer 121 disposed on the surface of the first sub-layer 120 away from the glass core board 10, and the width of the first sub-layer 120 is greater than the width of the second sub-layer 121. The width directions of the first sub-layer 120 and the second sub-layer 121 are both perpendicular to the thickness direction of the glass core board 10, that is, the direction A in Figure 15 .

[0109] Step 102: Refer to Figure 15 and Figure 16, a scribing track 2 extending in the direction from the first surface to the second surface is preset on the substrate structure 1; in the direction from the first surface to the second surface, the projection of the scribing track 2 is located within the removal stop layer 12 (i.e., the scribing track 2 penetrates the groove 110); wherein, the width of the first sub-layer 120 is greater than the width of the scribing track 2, and the width directions of both the first sub-layer 120 and the scribing track 2 are consistent with the direction perpendicular to the thickness of the glass core board 10, that is, Figure 15 the A direction in Figure 16 . Further, the difference between the width of the first sub-layer 120 and the width of the scribing track 2 is greater than or equal to 10 microns and less than or equal to 300 microns. Still further, in the direction from the first surface to the second surface, the center line of the scribing track 2 coincides with the center line of the removal stop layer 12. In addition, the width of the second sub-layer 121 is greater than or equal to the width of the scribing track 2. At this time, the scribing track 2 is spaced apart from or abuts against the dielectric layers 11 located on both sides of the scribing track 2 and closest to it. For example,

[0110] Step 103: Refer to Figure 15 and Figure 16 , and the removal stop layer 12 is removed by wet etching to expose the glass core board 10 to obtain a processed substrate structure.

[0111] Step 104: Refer to Figure 16 and Figure 17 , and the glass core board 10 of the processed substrate structure is scribed along the scribing track 2 by using a soft knife to obtain a plurality of spaced-apart substrate sub-structures 15.

[0112] Refer to Figure 17 and Figure 18 , taking the boundary line of the first sub-layer 120 as the demarcation line (or taking the side wall of the groove 110 where the first sub-layer 120 is located as the demarcation line), wherein, the substrate sub-structure 15 includes a substrate unit 150 and a crack propagation unit 151 distributed along its length direction. The substrate unit 150 is the part for normally forming components in the later stage or for subsequent packaging, and the crack propagation unit 151 is the area between the boundary line of the first sub-layer 120 (or the side wall of the groove 110 where the first sub-layer 120 is located) and the scribed edge of the substrate sub-structure 15. At this time, even if cracks 3 are generated during the process of scribing the processed substrate structure along the scribing track 2, since the above crack propagation unit 151 reserves space for the expansion of the cracks 3, only a small part of the cracks 3 or no cracks 3 extend to the substrate unit 150. At this time, the influence of the cracks 3 on the substrate unit 150 is very small or basically none. Based on this, the probability of the cracks 3 extending into the glass core board 10 is reduced, and the quality of the structure obtained after segmentation (i.e., the substrate sub-structure 15) is improved.

[0113] Further, there is no dielectric layer 11 closely attached to the glass core board 10 above the glass core board 10 within the crack propagation unit 151. Therefore, during the dicing process, even if there is stress concentration at the corners, or even if the corners break off, it does not affect the reliability of the substrate unit 150 included in the substrate sub-structure 15, and thus the reliability of the substrate sub-structure 15 can be ensured. That is, the stress concentration region 152 shown in the prior art Figure 1 becomes the stress release region 153 shown in the present application Figure 3 , thereby avoiding the problem of cracks 3 being generated inside the glass core board 10 due to stress concentration. Further, when dicing is performed after removing the dielectric layer 11 in contact with the glass core board 10 within the crack propagation unit 151, the probability of delamination and cracking between the dielectric layer 11 and the glass core board 10 can be reduced.

[0114] It should be noted that the above four examples are only for explanation and illustration, and are not all embodiments of the present application.

[0115] Although the present invention has been described in connection with various embodiments, however, in the process of implementing the claimed invention, those skilled in the art can understand and achieve other variations of the disclosed embodiments by viewing the drawings, the disclosure, and the appended claims. In the claims, the word "comprising" does not exclude other components or steps, and "a" or "one" does not exclude a plurality. A single processor or other unit can implement several functions recited in the claims. Certain measures are recited in mutually different dependent claims, but this does not mean that these measures cannot be combined to produce good results.

[0116] Although the present invention has been described in connection with specific features and their embodiments, it is obvious that various modifications and combinations can be made without departing from the spirit and scope of the present invention. Accordingly, the present specification and the drawings are only exemplary descriptions of the present invention defined by the appended claims, and are considered to cover any and all modifications, variations, combinations, or equivalents within the scope of the present invention. Obviously, those skilled in the art can make various changes and modifications to the present invention without departing from the spirit and scope of the present invention. Thus, if these modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalent technologies, the present invention is also intended to include these changes and modifications.

Claims

1. A dicing method for a substrate structure, characterized in that, Comprising: Obtaining a substrate structure; the substrate structure includes a glass core board, a dielectric layer, and a removal stop layer; the glass core board includes a first surface and a second surface opposite to each other along its thickness direction; the dielectric layer is disposed on the first surface and the second surface of the glass core board; the dielectric layer has a groove, and the groove includes an opening away from the glass core board; The removal stop layer is located in the groove; Along the direction perpendicular to the thickness of the glass core board, the removal stop layer includes: a first sub-layer close to the glass core board and a second sub-layer disposed on a surface of the first sub-layer away from the glass core board; the width of the first sub-layer is greater than or equal to the width of the second sub-layer; the removal stop layer is disposed on a surface of the dielectric layer facing away from the glass core board; and / or, the removal stop layer is disposed on the glass core board; A scribing track extending along the direction from the first surface to the second surface is preset on the substrate structure; along the direction from the first surface to the second surface, the projection of the scribing track is located within the removal stop layer; the width of the first sub-layer is greater than the width of the scribing track, and the scribing track is spaced apart from or in contact with the dielectric layers on both sides of the scribing track and closest to it; the width directions of the first sub-layer and the scribing track are both consistent with the direction perpendicular to the thickness of the glass core board; Removing the removal stop layer by etching to obtain a processed substrate structure; Scribing the processed substrate structure along the scribing track to obtain a plurality of spaced-apart substrate sub-structures.

2. The dicing method of the substrate structure according to claim 1, wherein Removing the exposed removal stop layer by etching includes: removing the exposed removal stop layer by wet etching.

3. The dicing method of the substrate structure according to claim 1, wherein The removal stop layer includes at least one or more of a copper removal stop layer, a zinc removal stop layer, a nickel removal stop layer, or a silver removal stop layer.

4. The dicing method of the substrate structure according to claim 1 or 3, characterized in that The dielectric layer includes at least one or more of ABF, PI, or ABF-like materials.

5. The dicing method of the substrate structure according to claim 1, wherein Along the direction from the first surface to the second surface, the center line of the scribing track coincides with the center line of the removal stop layer.

6. The dicing method of the substrate structure according to claim 1, characterized in that, The glass core board has a through hole penetrating the glass core board along the direction from the first surface to the second surface; The substrate structure further includes: A conductive layer formed on the inner wall of the through hole; the conductive layer located in the through hole has pores; the pores penetrate the glass core board along the direction from the first surface to the second surface; Plugging hole material formed on the conductive layer and located within the pores; The dielectric layer close to the glass core board is disposed on the first surface and the second surface of the glass core board, and covers the conductive layer and the plugging hole material in the opening area of the through hole; A circuit layer disposed on a surface of the dielectric layer facing away from the glass core board; the circuit layer is electrically connected to the conductive layer; The dielectric layer and the circuit layer sequentially disposed along the direction away from the glass core board form a combined structure, and the substrate structure includes at least one such combined structure.

7. The dicing method of the substrate structure according to claim 1, characterized in that Scribing the processed substrate structure along the scribing track to obtain a plurality of spaced-apart substrate sub-structures includes: scribing the processed substrate structure along the scribing track with a soft knife or a laser to obtain a plurality of spaced-apart substrate sub-structures.

8. The dicing method of the substrate structure according to claim 1, wherein The removal stop layer is disposed on a surface of the dielectric layer facing away from the glass core board, and the thickness of the dielectric layer between the removal stop layer and the glass core board is greater than 0 micrometers and less than or equal to 50 micrometers.

9. The dicing method of the substrate structure according to claim 1, wherein The difference between the width of the first sub-layer and the width of the scribing track is greater than or equal to 10 micrometers and less than or equal to 300 micrometers.

10. The scribing method of the substrate structure according to claim 1, characterized in that, The substrate sub-structure includes a substrate unit and a crack propagation unit distributed along the length direction of the substrate sub-structure; the crack propagation unit is an area between the boundary line of the first sub-layer and the scribing edge of the substrate sub-structure.

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