Radio frequency front-end module and electronic equipment

Abstract

The invention provides a radio frequency front-end module and an electronic device. The radio frequency front-end module comprises a substrate; the first chip is arranged on the substrate, and the first chip comprises a low-resistance substrate and a low-noise amplification circuit arranged on the substrate; a wiring structure disposed on the first chip; the first conductive bump is arranged on the wiring structure, is connected to the first chip through a first connecting structure of the wiring structure, and is configured to be connected with an input end of a low-noise amplification circuit; a first end of the first capacitor is configured to receive an input signal, and a second end of the first capacitor is connected to the first conductive bump. The first capacitor is arranged outside the first chip, and the connection between the second end of the first capacitor and the first chip is mainly realized through the wiring structure arranged on the first chip, so that the distance between the part of wiring and the substrate can be increased as much as possible, and the introduction of noise is reduced.

Description

Technical Field

[0001] The present application relates to the field of radio frequency technology, and particularly to a radio frequency front-end module and an electronic device. Background Art

[0002] With the continuous development of wireless communication technology, especially under the premise of the continuous development and application of the fifth-generation mobile communication technology (5th Generation Mobile Communication Technology, abbreviated as 5G), the requirements for miniaturization of various chips in this technology are getting higher and higher. Exemplarily, in a radio frequency front-end module, a low noise amplifier (LNA), as an important device at the receiving front end of a communication system, plays a decisive role in the noise performance and receiving sensitivity of the system. A low noise amplifier is an amplifier with a relatively low noise figure, and is generally used as a high-frequency or intermediate-frequency preamplifier of various radio receivers, as well as an amplifier circuit of high-sensitivity electronic detection devices, etc. While amplifying the small signal received by the antenna, it is also necessary to introduce as little noise as possible. However, in the scenario where the requirements for module miniaturization are getting higher and higher, how to reduce the introduction of noise by the low noise amplifier has become an urgent problem to be solved. Summary of the Invention

[0003] The object of the present application is to provide a radio frequency front-end module that can improve the overall anti-interference performance.

[0004] In the first aspect of the present application, a radio frequency front-end module is provided, including:

[0005] A substrate;

[0006] A first chip, disposed on the substrate, the first chip including a low-resistance substrate and a low noise amplification circuit disposed on the low-resistance substrate;

[0007] A wiring structure disposed on the first chip;

[0008] A first conductive bump, disposed on the wiring structure and connected to the first chip through a first connection structure of the wiring structure, and configured to be connected to an input end of the low noise amplification circuit;

[0009] A first capacitor, a first end of the first capacitor being configured to receive an input signal, and a second end of the first capacitor being connected to the first conductive bump.

[0010] Further, the radio frequency front-end module further includes:

[0011] A second chip is disposed on the substrate. The second chip includes a passive device unit, and an output end of the passive device unit is connected to a first end of the first capacitor, and the first capacitor is disposed in the second chip.

[0012] Further, the second chip is an integrated passive device chip.

[0013] Further, the first capacitor is disposed on the substrate.

[0014] Further, the wiring structure includes a first dielectric layer, a first metal layer, and a second dielectric layer arranged in sequence, and the first conductive bump is disposed on the second dielectric layer.

[0015] Further, the RF front-end module further includes a first inductor disposed in the first metal layer. A first end of the first inductor is configured to receive a power supply voltage, and a second end of the first inductor is connected to the first chip through a second connection structure of the wiring structure and is configured to be connected to an output end of the low-noise amplification circuit.

[0016] Further, the first chip further includes a first pad, the first conductive bump is connected to the first pad through the first connection structure, and the first pad is connected to an input end of the low-noise amplification circuit.

[0017] Further, a size of the first conductive bump is larger than a size of the first pad.

[0018] Further, the RF front-end module further includes:

[0019] A first passive element unit is disposed in the wiring structure, and a first end of the first passive element unit is connected to the first chip through a second connection structure of the wiring structure;

[0020] A second conductive bump is disposed on the wiring structure, and a second end of the first passive element unit is connected to the second conductive bump.

[0021] Further, the RF front-end module further includes:

[0022] A second passive element unit is disposed in the wiring structure. A first end of the second passive element unit is connected to the first chip through a fourth connection structure of the wiring structure, and a second end of the first passive element unit is connected to the first chip through a fifth connection structure passing through the wiring structure.

[0023] Further, the low-noise amplification circuit includes a first low-noise amplification transistor, which includes a gate, a source, and a drain. The gate is connected to the input end, the drain is connected to the output end, and the source is configured to be connected to the ground end.

[0024] Further, the first chip is a CMOS chip.

[0025] Further, the resistivity of the low-resistance substrate is less than or equal to 100 Ω·cm.

[0026] In a second aspect of the present application, a radio frequency front-end module is provided, including:

[0027] A substrate;

[0028] A first chip disposed on the substrate, the first chip including a low-resistance substrate and a low-noise amplification circuit disposed on the substrate;

[0029] A wiring structure disposed on the first chip;

[0030] A first passive element unit disposed in the wiring structure. A first end of the first passive element unit is connected to the first chip through a first connection structure of the wiring structure and is configured to be connected to a first node in the low-noise amplification circuit;

[0031] A second end of the first passive element unit is connected to the first chip through a fourth connection hole passing through the wiring structure and is configured to be connected to a second node in the low-noise amplification circuit, or the second end of the first passive element unit is connected to a first conductive bump disposed on the wiring structure.

[0032] In a third aspect of the present application, an electronic device is provided, including the radio frequency front-end module described in any one of the above.

[0033] In the radio frequency front-end module and electronic device provided in the embodiments of the present application, it includes: a substrate; a first chip disposed on the substrate, the first chip including a low-resistance substrate and a low-noise amplification circuit disposed on the substrate; a wiring structure disposed on the first chip; a first conductive bump disposed on the wiring structure and connected to the first chip through a first connection structure of the wiring structure, configured to be connected to an input end of the low-noise amplification circuit; a first capacitor, a first end of the first capacitor being configured to receive an input signal, and a second end of the first capacitor being connected to the first conductive bump. By disposing the first capacitor outside the first chip and mainly realizing the connection between the second end of the first capacitor and the first chip through the wiring structure disposed on the first chip, the distance between this part of the trace and the substrate can be increased as much as possible, so that the parasitics between the low-resistance substrate can be minimized as much as possible, and the introduction of this part of the noise is reduced. Description of the Drawings

[0034] Figure 1 It is a schematic diagram of a radio frequency front-end module provided by an embodiment of the present application;

[0035] Figure 2 It is another schematic diagram of a radio frequency front-end module provided by an embodiment of the present application;

[0036] Figure 3 It is another schematic diagram of a radio frequency front-end module provided by an embodiment of the present application;

[0037] Figure 4 It is another schematic diagram of a radio frequency front-end module provided by an embodiment of the present application. Detailed Embodiments

[0038] Next, the technical solutions in the embodiments of the present application will be clearly and completely described in conjunction with the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are some, but not all, of the embodiments of the present application. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present application without creative efforts shall fall within the protection scope of the present application.

[0039] It should be understood that the present application can be implemented in different forms and should not be construed as limited to the embodiments presented herein. On the contrary, providing these embodiments will make the disclosure thorough and complete, and will fully convey the scope of the present application to those skilled in the art. In the drawings, for clarity, the dimensions and relative dimensions of layers and regions may be exaggerated. The same reference numerals denote the same elements throughout the drawings.

[0040] It should be understood that when an element or layer is referred to as being "on", "adjacent to", "connected to", "coupled with", "attached to", or "coupled to" another element or layer, it can be directly on, adjacent to, connected or coupled to the other element or layer, or there can be intervening elements or layers. In contrast, when an element is referred to as being "directly on", "directly adjacent to", "directly connected to", or "directly coupled to" another element or layer, there are no intervening elements or layers. It should be understood that although the terms first, second, third, etc. may be used to describe various elements, components, regions, layers, and / or parts, these elements, components, regions, layers, and / or parts should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer, or part from another element, component, region, layer, or part. Thus, without departing from the teachings of the present application, the first element, component, region, layer, or part discussed below may be referred to as the second element, component, region, layer, or part.

[0041] Spatial relationship terms such as "under", "below", "lower", "beneath", "above", "upper", etc. are used herein for convenience in describing the relationship of one element or feature shown in the figures to other elements or features. It should be understood that, in addition to the orientation shown in the figures, spatial relationship terms are intended to also include different orientations of the device in use and operation. For example, if the device in the figures is flipped, then an element or feature described as "under" or "beneath" or "below" other elements or features will be oriented "above" the other elements or features. Thus, the exemplary terms "under" and "beneath" can include both an upper and a lower orientation. The device may be otherwise oriented (rotated 90 degrees or other orientations) and the spatial descriptors used herein are to be interpreted accordingly.

[0042] The purpose of the terms used herein is only to describe specific embodiments and is not a limitation of the present application. As used herein, the singular forms "a", "an", and "the" are also intended to include the plural forms unless the context clearly dictates otherwise. It should also be understood that the terms "comprises" and / or "comprising", when used in this specification, specify the presence of the stated features, integers, steps, operations, elements, and / or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or groups. As used herein, the term "and / or" includes any and all combinations of the associated listed items.

[0043] To fully understand the present application, detailed structures and steps will be presented in the following description to illustrate the technical solutions proposed by the present application. The preferred embodiments of the present application are described in detail below. However, in addition to these detailed descriptions, the present application may have other embodiments.

[0044] At least one embodiment of the present application provides a radio frequency front-end module, including:

[0045] A substrate;

[0046] A first chip, disposed on the substrate, the first chip including a low-resistance substrate and a low-noise amplification circuit disposed on the low-resistance substrate;

[0047] A wiring structure disposed on the first chip;

[0048] A first conductive bump, disposed above the wiring structure and connected to an input end of the low-noise amplification circuit through a first connection hole passing through the wiring structure;

[0049] A first capacitor, a first end of the first capacitor being configured to receive an input signal, and a second end of the first capacitor being connected to the first conductive bump.

[0050] Exemplarily, as Figure 1 shown, the first chip 20 in this embodiment is disposed on the substrate 10. Among them, the substrate of the first chip 20 is a low-resistance substrate. In at least one embodiment, the resistivity of the low-resistance substrate is less than or equal to 100 Ω·cm. In at least one embodiment, the first chip 20 can be a CMOS chip. In at least one embodiment, the resistivity of the low-resistance substrate is less than or equal to 50 Ω·cm. In at least one embodiment, the resistivity of the low-resistance substrate is less than or equal to 20 Ω·cm.

[0051] The low-noise amplification circuit is disposed in the first chip 20. Further, the low-noise amplification circuit is disposed above the low-resistance substrate. The low-noise amplification circuit may include a first low-noise amplification transistor. It can be understood that the first low-noise amplification transistor can be a transistor array formed by series or parallel connection of at least one transistor. The transistor can be a BJT transistor or a MOS transistor, etc.

[0052] The radio frequency front-end module further includes a wiring structure 30 disposed on the first chip 20. It can be understood that the wiring structure 30 can be a multi-layer structure. Exemplarily, the wiring structure 30 can be a multi-layer structure composed of at least one dielectric layer and at least one metal layer. The wiring structure 30 is disposed above the first chip 20, where the wiring structure 30 is disposed above a side of the first chip 20 far from the low-resistance substrate. Exemplarily, as Figure 1 shown, the low-resistance substrate of the first chip 20 is disposed on a side adjacent to the substrate 10. Relatively, the wiring structure 30 is disposed above a side of the first chip 20 far from the low-resistance substrate.

[0053] The radio frequency front-end module further includes a first conductive bump, as Figure 1As shown, the first conductive bump 40 is disposed on the wiring structure 30 and is connected to the first chip through the first connection structure of the wiring structure, and is configured to be connected to the input end of the low-noise amplification circuit. Among them, the first connection structure is disposed in the wiring structure 30. The first connection structure is a structure for electrically connecting the first conductive bump and the first chip. Specifically, the first connection structure can be a structure for electrically connecting the first conductive bump and a pad of the first chip, and the pad is then connected to the input end of the low-noise amplification circuit. Optionally, the first connection structure can include vias disposed in the wiring structure, or the first connection structure can include metal trace patterns disposed in the wiring structure, or the first connection structure can include vias disposed in the wiring structure and metal trace patterns disposed in the wiring structure. In at least one embodiment, the first conductive bump is connected to the metal trace pattern in the wiring structure through a via, and the metal trace pattern is then connected to the first chip through a via.

[0054] It can be understood that in at least one embodiment, for the connection between the wiring structure and the first chip, conductive bumps can be respectively disposed at corresponding positions of the wiring structure and the first chip, and then connected through the conductive bumps.

[0055] The RF front-end module further includes a first capacitor. The first end of the first capacitor is configured to receive an input signal, and the second end of the first capacitor is connected to the first conductive bump. The first capacitor can be directly disposed on the substrate, or the first capacitor can be disposed in other chips. The first end of the first capacitor is configured to receive an input signal, and the second end of the first capacitor is connected to the first conductive bump.

[0056] In at least one embodiment, the first chip 10 is disposed on the substrate 10 through a wire bonding process. As Figure 1 shown, specifically, the first conductive bump can be directly connected to the second end of the first capacitor through a bonding wire, or connected to the second end of the first capacitor through a bonding wire and a trace on the substrate.

[0057] In at least one embodiment, the first chip 10 is disposed on the substrate 10 through a flip-chip process. Specifically, as Figure 2 shown, the first chip 10 can be connected to the substrate through conductive bumps (including the first conductive bump and other conductive bumps) on the wiring structure, and the second end of the first capacitor can be connected to the first conductive bump through a trace on the substrate.

[0058] In this embodiment, the RF front-end module includes: a substrate; a first chip disposed on the substrate, the first chip including a low-resistance substrate and a low-noise amplification circuit disposed on the substrate; a wiring structure disposed on the first chip; a first conductive bump disposed on the wiring structure and connected to the first chip through a first connection structure of the wiring structure, configured to be connected to an input end of the low-noise amplification circuit; a first capacitor, a first end of the first capacitor configured to receive an input signal, and a second end of the first capacitor connected to the first conductive bump. By disposing the first capacitor outside the first chip and mainly realizing the connection between the second end of the first capacitor and the first chip through the wiring structure disposed on the first chip, the distance between this part of the trace and the substrate can be increased as much as possible, so that the parasitics between the low-resistance substrate can be minimized, reducing the introduction of this part of the noise.

[0059] In at least one embodiment, the RF front-end module further includes:

[0060] a second chip disposed on the substrate, the second chip including a passive device unit, an output end of the passive device unit being connected to the first end of the first capacitor, and the first capacitor being disposed in the second chip.

[0061] In this embodiment, the second chip is also disposed on the substrate. As Figure 2 shown, the second chip 50 is also disposed on the substrate 10. The second chip 50 includes a passive device unit. Optionally, the passive device unit may include at least one of an inductor, a capacitor, and a resistor. In at least one embodiment, the first capacitor is also disposed in the second chip. The output end of the passive device unit is connected to one end of the first capacitor, and the second end of the first capacitor can be connected to the substrate through a conductive bump of the second chip and then connected to the first conductive bump of the first chip through a wiring pattern on the substrate. The input end of the passive device unit can be configured to be connected to an RF signal input end to receive an input RF signal.

[0062] In at least one embodiment, the second chip is an integrated passive device chip.

[0063] In at least one embodiment, the first capacitor is disposed on the substrate. The first capacitor can be an SMD device, or the first capacitor is implemented through a wiring pattern on the substrate.

[0064] In at least one embodiment, the wiring structure includes a first dielectric layer, a first metal layer, and a second dielectric layer arranged in sequence, and the first conductive bump is disposed on the second dielectric layer. In this embodiment, the first metal layer is disposed between the first dielectric layer and the second dielectric layer. The first dielectric layer is disposed on the first chip, the first metal layer is disposed on the first dielectric layer, the second dielectric layer is disposed on the first metal layer, and the first conductive bump is disposed on the second dielectric layer.

[0065] In at least one embodiment, the radio frequency front-end module further includes:

[0066] A first passive element unit disposed in the wiring structure, and a first end of the first passive element unit is connected to the first chip through a second connection structure of the wiring structure;

[0067] A second conductive bump disposed on the wiring structure, and a second end of the first passive element unit is connected to the second conductive bump.

[0068] Wherein, the first passive element unit may be composed of at least one passive element, and the passive element may be any one of a resistor, a capacitor, and an inductor.

[0069] The second connection structure is a structure for electrically connecting a first end of the first passive element unit and the first chip. The second connection structure may include a via hole disposed in the wiring structure, or the second connection structure may include a metal trace pattern disposed in the wiring structure, or the second connection structure may include a via hole disposed in the wiring structure and a metal trace pattern disposed in the wiring structure.

[0070] In at least one embodiment, the radio frequency front-end module further includes a first inductor disposed in the wiring structure. The first inductor may be disposed in at least one layer of the wiring structure. Optionally, the first inductor is disposed in at least two metal layers of the wiring structure. Exemplarily, the wiring structure includes two metal layers, and the first inductor may be partially disposed in the first metal layer and partially disposed in the second metal layer, and the two parts are connected through a via hole connecting the first metal layer and the second metal layer.

[0071] In at least one embodiment, the radio frequency front-end module further includes a first inductor disposed in the first metal layer, a second end of the first inductor is configured to receive a power supply voltage, and a first end of the first inductor is connected to the first chip through a second connection structure of the wiring structure and is configured to be connected to an output end of the low-noise amplification circuit.

[0072] In this embodiment, the first inductor is disposed in the first metal layer. Specifically, the first inductor can be disposed in the first metal layer in a wire-wound form. The second end of the first inductor is configured to receive a power supply voltage, and the first end is connected to the first chip through the second connection structure of the wiring structure.

[0073] The second connection structure is a structure for electrically connecting the first end of the first inductor and the first chip. Specifically, the second connection structure can be configured to electrically connect the first end of the first inductor and a pad of the first chip, and the pad is further connected to the output end of the low-noise amplification circuit. In at least one embodiment, the first end of the first inductor is connected to a metal trace pattern in the wiring structure through a via, and the metal trace pattern is further connected to the first chip through a via.

[0074] The second end of the first inductor can be connected to the second conductive bump through a metal trace pattern in the wiring structure, or through a via in the wiring structure, or through a metal trace pattern and a via in the wiring structure. The second conductive bump is configured to be connected to the power supply voltage terminal.

[0075] In at least one embodiment, the first chip further includes a first pad, and the first conductive bump is connected to the first pad through the first connection structure, and the first pad is connected to the input end of the low-noise amplification circuit.

[0076] In this embodiment, the first conductive bump is connected to the first pad through the first connection structure, and the first pad is further connected to the input end of the low-noise amplification circuit. The noise influence caused by the parasitics formed by the RF input path and the low-resistance substrate can be reduced.

[0077] In at least one embodiment, the size of the first pad is smaller than the size of the first conductive bump. Since the size of the first pad is smaller than the size of the first conductive bump, although the first pad is closer to the low-resistance substrate than the first conductive bump, the parasitics brought are relatively small. Otherwise, directly disposing the first conductive bump at the first pad to achieve interconnection with the outside will bring larger parasitics with the low-resistance substrate. Therefore, this embodiment preferably reduces the introduction of noise through this setting.

[0078] In at least one embodiment, the RF front-end module further includes:

[0079] The second passive component unit is disposed in the wiring structure. A first end of the second passive component unit is connected to the first chip through a fourth connection structure of the wiring structure, and a second end of the first passive component unit is connected to the first chip through a fifth connection structure of the wiring structure.

[0080] Wherein, the second passive component unit may be composed of at least one passive component, and the passive component may be any one of a resistor, a capacitor, and an inductor.

[0081] The fourth connection structure is a structure for electrically connecting the first end of the second passive component unit and the first chip. The fourth connection structure may include a via hole disposed in the wiring structure, or the fourth connection structure may include a metal trace pattern disposed in the wiring structure, or the fourth connection structure may include a via hole disposed in the wiring structure and a metal trace pattern disposed in the wiring structure.

[0082] The fifth connection structure is a structure for electrically connecting the second end of the second passive component unit and the first chip. The fifth connection structure may include a via hole disposed in the wiring structure, or the fifth connection structure may include a metal trace pattern disposed in the wiring structure, or the fifth connection structure may include a via hole disposed in the wiring structure and a metal trace pattern disposed in the wiring structure.

[0083] In at least one embodiment, the first end of the second passive component unit is connected to an output end of a previous stage of the low-noise amplifier circuit, and the second end of the second passive unit is connected to an input end of a next stage of the low-noise amplifier circuit. Exemplarily, the second passive component unit includes a blocking capacitor, a first end of the blocking capacitor is connected to the output end of the previous stage of the low-noise amplifier circuit, and a second end of the blocking capacitor is connected to the input end of the next stage of the low-noise amplifier circuit.

[0084] In at least one embodiment, the first end of the second passive component unit is connected to an input end of the low-noise amplifier circuit, and the second end of the second passive component unit is connected to an output end of a next stage of the low-noise amplifier circuit. Exemplarily, the second passive component unit may include a resistor and a capacitor connected in series, and the resistor and the capacitor connected in series are connected between the input end and the output end of the low-noise amplifier circuit.

[0085] In this embodiment, the radio frequency front-end module further includes: a second passive element unit disposed in the wiring structure. A first end of the second passive element unit is connected to the first chip through a fourth connection structure of the wiring structure, and a second end of the first passive element unit is connected to the first chip through a fifth connection structure of the wiring structure. By disposing the passive element unit on the radio frequency path in the wiring structure and making the corresponding traces further away from the low-resistance substrate, the noise performance of the corresponding low-noise amplifier circuit is further improved.

[0086] In at least one embodiment, the low-noise amplifier circuit includes a first low-noise amplifier transistor. It can be understood that the first low-noise amplifier transistor can be implemented by a single first low-noise amplifier transistor, or can be formed by two or more first low-noise amplifier transistors connected in series or in parallel, or other conventional implementation methods in the art are adopted, which are not limited herein. In at least one implementation, the first low-noise amplifier transistor can be a bipolar junction transistor (BJT), or a field effect transistor (FET), etc. In at least one implementation, the first low-noise amplifier transistor is a CMOS transistor. Exemplarily, the first low-noise amplifier transistor is a transistor implemented by a CMOS process. It can be understood that the first low-noise amplifier transistor can be any amplification stage in the low-noise amplifier circuit. Exemplarily, when the low-noise amplifier circuit includes a driving stage and an output stage, the first low-noise amplifier transistor in this embodiment can be any amplification stage (i.e., the driving stage or the output stage) in the above radio frequency power amplifier.

[0087] In at least one embodiment, as Figure 3 shown, taking the first low-noise amplifier transistor as a MOS transistor as an example, the first low-noise amplifier transistor 21 includes a gate, a drain, and a source. Among them, the gate of the first low-noise amplifier transistor 21 is connected to a second end of the first capacitor 60. The source of the first low-noise amplifier transistor 21 is configured to be grounded. Specifically, the source of the first low-noise amplifier transistor can be directly grounded or grounded through a passive element. Exemplarily, it is connected to the ground terminal through a second inductor. The drain of the first low-noise amplifier transistor 21 is connected to the source of the second low-noise amplifier transistor 24. The gate of the second low-noise amplifier transistor 24 is configured to receive a bias signal. Exemplarily, it receives a bias voltage Vbias. The drain of the second low-noise amplifier transistor 24 is connected to the signal output terminal RFout.

[0088] Figure 3 It further includes a first inductor 22. A first end of the first inductor 22 is configured to be connected to the power supply voltage, and a second end of the first inductor 22 is connected to the drain of the first low-noise amplifier transistor 21.

[0089] Among them, the passive component unit or the corresponding trace can be arranged outside the first chip. Exemplarily, it can be arranged in the wiring structure, or on the substrate, or in other chips. And the connection lines between these passive component units and the low-noise amplification transistor can be at least partially arranged in the wiring structure. Exemplarily, the first inductor and / or the second inductor 23 can be arranged in the wiring structure and then connected to the first chip through the corresponding connection structure.

[0090] In at least one embodiment, as Figure 4 shown, taking the first low-noise amplification transistor as a MOS transistor as an example, the first low-noise amplification transistor 21 includes a gate, a drain, and a source. Among them, the gate of the first low-noise amplification transistor 21 is connected to the second end of the first capacitor. The first capacitor is connected to the first chip through the first connection structure 71. Specifically, it can be connected to the first pad of the first chip, and the first pad is then connected to the gate of the first low-noise amplification transistor 21. The source of the first low-noise amplification transistor is configured to be grounded. Specifically, the source of the first low-noise amplification transistor can be directly grounded or grounded through a passive component. Exemplarily, it is connected to the ground terminal through the second inductor. As Figure 3 shown, the first end of the second inductor 23 is connected to the source of the first low-noise amplification transistor 21, and the second end of the second inductor 23 is connected to the ground terminal. The drain of the first low-noise amplification transistor 21 is connected to the signal output terminal RFout.

[0091] In at least one embodiment, the first end of the first inductor 22 is configured to be connected to the power supply voltage, and the second end of the first inductor 22 is connected to the drain of the first low-noise amplification transistor 21. Specifically, the second end of the first inductor 22 is connected to the first chip through the second connection structure 72. Specifically, it can be connected to the second pad of the first chip, and the second pad is then connected to the drain of the first low-noise amplification transistor 21.

[0092] In at least one embodiment, the low-noise amplification circuit includes a first low-noise amplification transistor, the first low-noise amplification transistor includes a gate, a source, and a drain, the gate is connected to the input terminal, the drain is connected to the output terminal, and the source is configured to be connected to the ground terminal.

[0093] In at least one embodiment, the first chip is a CMOS chip.

[0094] In at least one embodiment, the resistivity of the low-resistance substrate is less than or equal to 100 Ω·cm.

[0095] At least one embodiment of the present invention provides a radio frequency front-end module, including:

[0096] a substrate;

[0097] A first chip, disposed on the substrate, the first chip including a low-resistance substrate and a low-noise amplification circuit disposed on the low-resistance substrate;

[0098] A wiring structure disposed on the first chip;

[0099] A first passive element unit, disposed in the wiring structure, a first end of the first passive element unit being connected to the first chip through a first connection structure of the wiring structure and configured to be connected to a first node in the low-noise amplification circuit;

[0100] A second end of the first passive element unit is connected to the first chip through a fourth connection hole passing through the wiring structure and configured to be connected to a second node in the low-noise amplification circuit, or the second end of the first passive element unit is connected to a first conductive bump disposed on the wiring structure.

[0101] Wherein, the first node and the second node are different circuit nodes in the low-noise amplification circuit. A first end of the first passive element unit disposed in the wiring structure is connected to the first node in the low-noise amplification circuit, and a second end is configured to be connected to the second node in the low-noise amplification circuit. Exemplarily, the first passive element unit may be a matching element connected between an output node of a front-stage circuit and an input node of a rear-stage circuit of the low-noise amplification circuit. Or, as Figure 3 shown, the first passive element may be at least one passive element connected between the drain of the first low-noise amplification transistor 21 and the source of the second low-noise amplification transistor 24.

[0102] Or, the second end of the first passive element unit is connected to a first conductive bump disposed on the wiring structure and then connected to the outside through this first conductive bump.

[0103] At least one embodiment of the present invention provides a radio frequency front-end module, including:

[0104] A substrate;

[0105] A first chip, disposed on the substrate, the first chip including a low-resistance substrate and a low-noise amplification circuit disposed on the low-resistance substrate;

[0106] A second chip, disposed on the substrate, the second chip including a filter unit;

[0107] An input matching unit, a first end of the input matching unit being connected to an output end of the filter unit, and a second end of the input matching unit being connected to the low-noise amplification circuit.

[0108] At least one embodiment of the present invention provides an electronic device, including the radio frequency front-end module described in any of the above embodiments / implementations.

[0109] At least one embodiment of the present application provides a radio frequency front-end module, including:

[0110] A substrate;

[0111] A first chip, disposed on the substrate, the first chip including a low-resistance substrate and a low-noise amplification transistor disposed on the low-resistance substrate;

[0112] A matching unit disposed outside the first chip, a first end of the matching unit being configured to receive an input signal, and a second end of the matching unit being connected to an input end of the low-noise amplification transistor.

[0113] Wherein, the matching unit can be a circuit unit composed of at least one of a resistor, a capacitor, and an inductor. The first end of the matching unit is configured to receive an input signal, and the second end of the matching unit is connected to the input end of the low-noise amplification transistor.

[0114] In this embodiment, by disposing the matching unit outside the first chip, the matching unit and the corresponding connection lines can be farther away from the low-resistance substrate of the first chip, so that the formed parasitics are smaller and the overall noise is reduced.

[0115] In at least one embodiment, the matching unit includes a first capacitor, a first end of the first capacitor being configured to receive an input signal, and a second end of the first capacitor being connected to an input end of the low-noise amplification transistor.

[0116] In at least one embodiment, the matching unit is disposed on the substrate.

[0117] In at least one embodiment, the radio frequency front-end module further includes:

[0118] A second chip, disposed on the substrate, the second chip including a passive device unit, the matching unit being disposed in the second chip, and an output end of the passive device unit being connected to a first end of the matching unit.

[0119] The above are only the preferred embodiments of the present application. It should be noted that for those of ordinary skill in the art, without departing from the technical principle of the present application, several improvements and replacements can be made, and these improvements and replacements should also be regarded as the protection scope of the present application.

Claims

1. A radio frequency front-end module, characterized in that Comprising: Substrate; A first chip, disposed on the substrate, the first chip including a low-resistance substrate and a low-noise amplifier circuit disposed on the low-resistance substrate; A wiring structure disposed on the first chip; A first conductive bump, disposed on the wiring structure and connected to the first chip through a first connection structure of the wiring structure, configured to be connected to an input end of the low-noise amplifier circuit; A first capacitor, a first end of the first capacitor configured to receive an input signal, and a second end of the first capacitor connected to the first conductive bump.

2. The radio frequency front-end module according to claim 1, wherein Further comprising: A second chip, disposed on the substrate, the second chip including a passive device unit, an output end of the passive device unit connected to the first end of the first capacitor, and the first capacitor disposed in the second chip.

3. The RF front-end module according to claim 2, wherein The second chip is an integrated passive device chip.

4. The RF front-end module according to claim 1, wherein The first capacitor is disposed on the substrate.

5. The RF front-end module according to claim 1, wherein, The wiring structure includes a first dielectric layer, a first metal layer, and a second dielectric layer disposed in sequence, and the first conductive bump is disposed on the second dielectric layer.

6. The RF front-end module according to claim 5, wherein, Further comprising a first inductor, disposed in the first metal layer, a first end of the first inductor configured to receive a power supply voltage, and a second end of the first inductor connected to the first chip through a second connection structure of the wiring structure, configured to be connected to an output end of the low-noise amplifier circuit.

7. The RF front-end module according to claim 1, wherein The first chip further includes a first pad, the first conductive bump is connected to the first pad through the first connection structure, and the first pad is connected to the input end of the low-noise amplifier circuit.

8. The RF front-end module according to claim 7, wherein The size of the first conductive bump is larger than the size of the first pad.

9. The radio frequency front-end module according to claim 1, wherein, Further comprising: A first passive element unit, disposed in the wiring structure, a first end of the first passive element unit connected to the first chip through a second connection structure of the wiring structure; A second conductive bump, disposed on the wiring structure, and a second end of the first passive element unit connected to the second conductive bump.

10. The radio frequency front-end module according to claim 1, wherein Further comprising: A second passive element unit, disposed in the wiring structure, a first end of the second passive element unit connected to the first chip through a fourth connection structure of the wiring structure, and a second end of the first passive element unit connected to the first chip through a fifth connection structure passing through the wiring structure.

11. The RF front-end module according to claim 1, wherein, The low-noise amplifier circuit includes a first low-noise amplifier transistor, the first low-noise amplifier transistor including a gate, a source, and a drain, the gate connected to the input end, the drain connected to the output end, and the source configured to be connected to a ground end.

12. The RF front-end module according to claim 1, wherein, The first chip is a CMOS chip.

13. The RF front-end module according to claim 1, wherein, The resistivity of the low-resistance substrate is less than or equal to 100 Ω·cm.

14. A radio frequency front-end module, characterized in that, Comprising: Substrate; A first chip, disposed on the substrate, the first chip including a low-resistance substrate and a low-noise amplifier circuit disposed on the low-resistance substrate; A wiring structure disposed on the first chip; The first passive component unit is disposed in the wiring structure. The first end of the first passive component unit is connected to the first chip through the first connection structure of the wiring structure and is configured to be connected to the first node in the low-noise amplifier circuit; The second end of the first passive component unit is connected to the first chip through the fourth connection hole passing through the wiring structure and is configured to be connected to the second node in the low-noise amplifier circuit. Alternatively, the second end of the first passive component unit is connected to the first conductive bump disposed on the wiring structure.

15. An electronic device, characterized in that, It includes the radio frequency front-end module according to any one of claims 1-14.

Images