Semiconductor light-emitting structure and preparation method thereof

Abstract

The invention provides a semiconductor light-emitting structure and a preparation method thereof. The semiconductor light-emitting structure comprises a first film system, a semiconductor gain layer, a second film system, a nonlinear crystal and a third film system which are sequentially arranged along a first direction, the semiconductor gain layer is used for lasing fundamental frequency light, and the nonlinear crystal is used for converting the fundamental frequency light into variable frequency light; wherein a first resonant cavity for fundamental frequency light is formed between the first film system and the third film system; a second resonant cavity for variable frequency light is formed between the second film system and the third film system; wherein the reflectivity of the second film system to the fundamental frequency light is smaller than the reflectivity of the first film system to the fundamental frequency light and smaller than the reflectivity of the third film system to the fundamental frequency light; the reflectivity of the second film system to the variable frequency light is higher than that of the third film system to the variable frequency light; and the reflectivity of the third film system to the variable frequency light is smaller than that of the third film system to the fundamental frequency light. And the design of small size, high brightness and light weight of the semiconductor light-emitting structure is realized.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and particularly to a semiconductor light-emitting structure and a preparation method thereof. Background Art

[0002] A vertical external cavity surface emitting semiconductor laser (VECSEL) combines a semiconductor gain medium with an optical resonator, overcoming the limitation of the mode area of traditional semiconductor lasers. It can achieve single-mode output with high output power and high beam quality, and is a new solution for realizing high-brightness lasers. With the urgent needs of applications such as laser display, laser medicine, and laser detection, it is required that the vertical external cavity surface emitting semiconductor laser operates in some special wavelength bands, such as ultraviolet, visible light, and even mid-infrared and far-infrared regions. However, limited by the current semiconductor material gain, it is difficult to achieve direct and efficient gain in the above wavelength bands. Therefore, processes such as nonlinear frequency conversion, such as frequency doubling, sum frequency, and difference frequency, need to be introduced. The structure of nonlinear frequency conversion in current vertical external cavity surface emitting semiconductor lasers generally uses a traditional optical resonator, inserting a nonlinear crystal and large-volume optical components in the spatial optical path. The introduced external optical components are not conducive to the chip design of small volume, light weight, and high integration. Summary of the Invention

[0003] Therefore, the technical problem to be solved by the present invention is how to improve the conversion efficiency of frequency-converted light, improve the fundamental mode output characteristics and beam quality of fundamental frequency light, and lighten the weight, so as to provide a semiconductor light-emitting structure and a preparation method thereof.

[0004] The present application provides a semiconductor light-emitting structure. The semiconductor light-emitting structure is a surface-emitting semiconductor light emitter, including: a first film system, a semiconductor gain layer, a second film system, a nonlinear crystal, and a third film system arranged in sequence along a first direction and integrated together; the semiconductor gain layer is used for lasing fundamental frequency light, and the nonlinear crystal is used for converting the fundamental frequency light into frequency-converted light; the frequency-converted light is used to exit from the third film system; wherein, a first resonator for the fundamental frequency light is formed between the first film system and the third film system; a second resonator for the frequency-converted light is formed between the second film system and the third film system; the nonlinear crystal is integrated inside the first resonator; wherein, the reflectivity of the second film system for the fundamental frequency light is less than the reflectivity of the first film system for the fundamental frequency light and less than the reflectivity of the third film system for the fundamental frequency light; the reflectivity of the second film system for the frequency-converted light is higher than the reflectivity of the third film system for the frequency-converted light; the reflectivity of the third film system for the frequency-converted light is less than the reflectivity of the third film system for the fundamental frequency light.

[0005] Optionally, the thickness of the second film system in the first direction is 10 nanometers to 100 micrometers.

[0006] Optionally, the reflectivity of the first film system for the fundamental frequency light is greater than or equal to 80%; the reflectivity of the second film system for the fundamental frequency light is less than or equal to 30%; the reflectivity of the third film system for the fundamental frequency light is greater than or equal to 80%.

[0007] Optionally, the reflectivity of the second film system for the frequency-converted light is greater than or equal to 80%; the reflectivity of the third film system for the frequency-converted light is less than or equal to 30%.

[0008] Optionally, further comprising: a substrate layer, located on the side of the first film system away from the semiconductor gain layer.

[0009] Optionally, the first film system includes alternately stacked first dielectric films and second dielectric films, and the refractive index of the first dielectric film is greater than that of the second dielectric film; the second film system includes alternately stacked third dielectric films and fourth dielectric films, and the refractive index of the third dielectric film is greater than that of the fourth dielectric film; the third film system includes alternately stacked fifth dielectric films and sixth dielectric films, and the refractive index of the fifth dielectric film is greater than that of the sixth dielectric film.

[0010] Optionally, the surface of the semiconductor gain layer on one side in the first direction is connected to the first film system, and the surface of the semiconductor gain layer on the other side in the first direction is connected to the second film system; the surface of the nonlinear crystal on one side in the first direction is connected to the second film system, and the surface of the nonlinear crystal on the other side in the first direction is connected to the third film system.

[0011] The present application also provides a method for preparing a semiconductor light-emitting structure. The semiconductor light-emitting structure is a surface-emitting semiconductor light emitter, including: forming a semiconductor gain layer on one side of the first film system along the first direction; forming a second film system on one side surface of the nonlinear crystal along the first direction, and forming a third film system on the other side surface of the nonlinear crystal along the first direction; bonding the side surface of the second film system facing away from the nonlinear crystal to the side surface of the semiconductor gain layer facing away from the first film system; integrating the first film system, the semiconductor gain layer, the second film system, the nonlinear crystal and the third film system together; wherein, the semiconductor gain layer is used for lasing fundamental frequency light, and the nonlinear crystal is used for converting the fundamental frequency light into frequency-converted light; the frequency-converted light is used for exiting from the third film system; a first resonant cavity for the fundamental frequency light is formed between the first film system and the third film system; a second resonant cavity for the frequency-converted light is formed between the second film system and the third film system; the nonlinear crystal is integrated inside the first resonant cavity; wherein, the reflectivity of the second film system for the fundamental frequency light is less than the reflectivity of the first film system for the fundamental frequency light and less than the reflectivity of the third film system for the fundamental frequency light; the reflectivity of the second film system for the frequency-converted light is higher than the reflectivity of the third film system for the frequency-converted light; the reflectivity of the third film system for the frequency-converted light is less than the reflectivity of the third film system for the fundamental frequency light.

[0012] Optionally, the side surface of the second film system facing away from the nonlinear crystal is bonded to the side surface of the semiconductor gain layer facing away from the first film system by intermolecular van der Waals force; or, the side surface of the second film system facing away from the nonlinear crystal is bonded to the side surface of the semiconductor gain layer facing away from the first film system by using a mechanical fixing process, a eutectic melting process or an organic adhesion process.

[0013] The technical solution of the present invention has the following beneficial effects: The semiconductor light-emitting structure provided by the technical solution of the present invention is provided with a second film system between the nonlinear crystal and the semiconductor gain layer. The reflectivity of the second film system to the frequency-converted light is higher than that of the third film system to the frequency-converted light. The second film system blocks the transmission of the frequency-converted light to the semiconductor gain layer and blocks the absorption of the frequency-converted light by the semiconductor gain layer, thereby improving the conversion efficiency of the frequency-converted light. The reflectivity of the second film system to the fundamental frequency light is less than that of the first film system to the fundamental frequency light and less than that of the third film system to the fundamental frequency light, reducing the reflection of the fundamental frequency light at the interface between the semiconductor gain layer and the nonlinear crystal, so that a first resonant cavity for the fundamental frequency light is formed between the first film system and the third film system, increasing the cavity length of the fundamental frequency light, and further increasing the diffraction loss of the higher-order mode of the fundamental frequency light, which is beneficial to improving the fundamental mode output characteristics and beam quality of the fundamental frequency light. Since the nonlinear crystal is integrated inside the first resonant cavity, the volume of the semiconductor light-emitting structure is greatly reduced, realizing a high-brightness and lightweight design. Description of the Drawings

[0014] In order to more clearly illustrate the specific embodiments of the present invention or the technical solutions in the prior art, the following will briefly introduce the drawings required for the description of the specific embodiments or the prior art. Obviously, the drawings in the following description are some embodiments of the present invention. For those of ordinary skill in the art, other drawings can be obtained based on these drawings without creative efforts.

[0015] Figure 1 Schematic diagram of the semiconductor light-emitting structure according to an embodiment of the present application; Figure 2 Schematic diagram of the relationship between the wavelength of light and the reflectivity of the first film system according to an embodiment of the present application; Figure 3 Schematic diagram of the relationship between the wavelength of light and the reflectivity of the second film system according to an embodiment of the present application; Figure 4 Schematic diagram of the relationship between the wavelength of light and the reflectivity of the third film system according to an embodiment of the present application; Figure 5 Schematic diagram of the process for preparing the semiconductor light-emitting structure according to another embodiment of the present application. Detailed Embodiments

[0016] The following will clearly and completely describe the technical solutions of the present invention with reference to the drawings. Obviously, the described embodiments are some, but not all, of the embodiments of the present invention. All other embodiments obtained by those of ordinary skill in the art without creative efforts based on the embodiments of the present invention belong to the scope of protection of the present invention.

[0017] In the description of the present invention, it should be noted that the orientation or positional relationship indicated by the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. is based on the orientation or positional relationship shown in the drawings. It is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be construed as a limitation to the present invention. In addition, the terms "first", "second", "third" are only used for descriptive purposes and cannot be construed as indicating or implying relative importance.

[0018] In addition, the technical features involved in different embodiments of the present invention described below can be combined with each other as long as they do not conflict with each other.

[0019] An embodiment of the present invention provides a semiconductor light-emitting structure. Referring to Figure 1 , it includes: a first film system 1, a semiconductor gain layer 2, a second film system 3, a nonlinear crystal 4, and a third film system 5 arranged in sequence along a first direction and integrated together; the frequency-converted light is used to exit from the third film system 5; the semiconductor gain layer 2 is used to emit fundamental-frequency light, and the nonlinear crystal 4 is used to convert the fundamental-frequency light into frequency-converted light; wherein, a first resonant cavity A for the fundamental-frequency light is formed between the first film system 1 and the third film system 5; a second resonant cavity B for the frequency-converted light is formed between the second film system 3 and the third film system 5; the nonlinear crystal 4 is integrated inside the first resonant cavity A; wherein, the reflectivity of the second film system 3 for the fundamental-frequency light is less than the reflectivity of the first film system 1 for the fundamental-frequency light and less than the reflectivity of the third film system 5 for the fundamental-frequency light; the reflectivity of the second film system 3 for the frequency-converted light is higher than the reflectivity of the third film system 5 for the frequency-converted light; the reflectivity of the third film system 5 for the frequency-converted light is less than the reflectivity of the third film system 5 for the fundamental-frequency light.

[0020] In the semiconductor light-emitting structure according to the embodiment of the present application, a second film system 3 is provided between the nonlinear crystal 4 and the semiconductor gain layer 2. The reflectivity of the second film system 3 to the frequency-converted light is higher than that of the third film system 5 to the frequency-converted light. The second film system 3 blocks the transmission of the frequency-converted light to the semiconductor gain layer 2 and blocks the absorption of the frequency-converted light by the semiconductor gain layer 2, thereby improving the conversion efficiency of the frequency-converted light. The reflectivity of the second film system 3 to the fundamental frequency light is less than that of the first film system 1 to the fundamental frequency light and less than that of the third film system 5 to the fundamental frequency light, reducing the reflection of the fundamental frequency light at the interface between the semiconductor gain layer 2 and the nonlinear crystal 4, so that a first resonant cavity A for the fundamental frequency light is formed between the first film system 1 and the third film system 5, increasing the cavity length of the fundamental frequency light, and further increasing the diffraction loss of the high-order mode of the fundamental frequency light, which is beneficial to improving the fundamental mode output characteristics and beam quality of the fundamental frequency light. Since the nonlinear crystal 4 is integrated inside the first resonant cavity A, the volume of the semiconductor light-emitting structure is greatly reduced, realizing a high-brightness and lightweight design.

[0021] The semiconductor light-emitting structure is a surface-emitting semiconductor light-emitting device, such as a surface-emitting semiconductor laser. The semiconductor light-emitting structure provided by the embodiment of the present application has the output characteristics of being compact and efficient, having a high conversion efficiency, and having a high beam quality, and can meet the requirements for semiconductor light-emitting structures with special wavelengths in fields such as underwater laser communication, laser display, and quantum communication.

[0022] In this embodiment, the surface of the semiconductor gain layer 2 on one side in the first direction is connected to the first film system 1, and the surface of the semiconductor gain layer 2 on the other side in the first direction is connected to the second film system 3; the surface of the nonlinear crystal 4 on one side in the first direction is connected to the second film system 3, and the surface of the nonlinear crystal 4 on the other side in the first direction is connected to the third film system 5.

[0023] In one embodiment, the reflectivity of the first film system 1 to the fundamental frequency light is greater than or equal to 80%, such as 80%, 85%, 90%, 95% or 98%.

[0024] Specifically, referring to Figure 2 , the horizontal axis represents the wavelength of the light, and the vertical axis represents the reflectivity of the first film system 1. Figure 2 The wavelength of the light in

[0025] is the wavelength of the fundamental frequency light. Taking the fundamental frequency light with a wavelength of 980 nm as an example, it can be seen that when the wavelength of the fundamental frequency light is 980 nm, the reflectivity of the first film system 1 can reach more than 98%. That is, the reflectivity of the first film system 1 to the fundamental frequency light with a wavelength of 980 nm is greater than or equal to 98%. Figure 3 and Figure 4 , the schematic diagram of the mechanism for converting the fundamental frequency light into the frequency-converted light by using the second harmonic generation mechanism is shown. In other embodiments, the mechanism for converting the fundamental frequency light into the frequency-converted light can adopt other mechanisms, such as difference frequency or sum frequency, etc.

[0026] In one embodiment, the reflectivity of the second film system 3 for the fundamental frequency light is less than or equal to 30%, such as 30%, 25%, 20%, 15%, 10% or 5%; the reflectivity of the second film system 3 for the frequency-converted light is greater than or equal to 80%, such as 80%, 85%, 90%, 95% or 98%. The preferred ranges of the reflectivity of the second film system 3 for the fundamental frequency light and the frequency-converted light are helpful for further improving the conversion efficiency of the frequency-converted light and improving the fundamental mode output characteristics and beam quality of the fundamental frequency light.

[0027] Specifically, referring to Figure 3 , the horizontal axis represents the wavelength of the light, and the vertical axis represents the reflectivity of the second film system 3. Figure 3 Taking the example of doubling the fundamental frequency light with a wavelength of 980 nm to the frequency-converted light with a wavelength of 490 nm in

[0028] In one embodiment, the reflectivity of the third film system 5 for the fundamental frequency light is greater than or equal to 80%, such as 80%, 85%, 90%, 95% or 98%; the reflectivity of the third film system 5 for the frequency-converted light is less than or equal to 30%, such as 30%, 25%, 20%, 15%, 10% or 5%.

[0029] Specifically, referring to Figure 4 , the horizontal axis represents the wavelength of the light, and the vertical axis represents the reflectivity of the third film system 5. Figure 4 Taking the example of doubling the fundamental frequency light with a wavelength of 980 nm to the frequency-converted light with a wavelength of 490 nm in

[0030] It should be noted that the wavelength of the frequency-converted light depends on the conversion mechanism of the fundamental frequency light (such as frequency doubling, difference frequency, etc.) and the expected wavelength of the frequency-converted light, and can be achieved by controlling the doping of the non-linear crystal semiconductor material.

[0031] In one embodiment, the material of the non-linear crystal 4 includes one of beta-barium borate, zinc germanium phosphide, yttrium calcium oxyborate, lithium niobate and lithium triborate.

[0032] In another embodiment, the nonlinear crystal 4 is doped with a semiconductor material, and the doped semiconductor material includes one of erbium, titanium, neodymium, and ytterbium.

[0033] In other embodiments, the material of the nonlinear crystal is not limited thereto.

[0034] In one embodiment, the first film system 1 includes alternately stacked first dielectric films 1a and second dielectric films 1b, and the refractive index of the first dielectric film 1a is greater than that of the second dielectric film 1b.

[0035] In one embodiment, the number of layers of the first dielectric film 1a is one or more, and the number of layers of the second dielectric film 1b is one or more. The number of layers of the first dielectric film 1a and the second dielectric film 1b is the same. Figure 1 For illustration, the number of layers of the first dielectric film 1a is three, and the number of layers of the second dielectric film 1b is three. In other embodiments, the number of layers of the first dielectric film and the second dielectric film is not limited.

[0036] In one embodiment, the material of the first dielectric film 1a includes, but is not limited to, any one of semiconductor materials, insulating materials, and metal materials; the material of the second dielectric film 1b includes, but is not limited to, any one of semiconductor materials, insulating materials, and metal materials.

[0037] In one embodiment, the second film system 3 includes alternately stacked third dielectric films 3a and fourth dielectric films 3b, and the refractive index of the third dielectric film 3a is greater than that of the fourth dielectric film 3b.

[0038] In one embodiment, the number of layers of the third dielectric film 3a is one or more, and the number of layers of the fourth dielectric film 3b is one or more. The number of layers of the third dielectric film 3a and the fourth dielectric film 3b is the same. Figure 1 For illustration, the number of layers of the third dielectric film 3a is three, and the number of layers of the fourth dielectric film 3b is three. In other embodiments, the number of layers of the third dielectric film and the fourth dielectric film is not limited.

[0039] In one embodiment, the material of the third dielectric film 3a includes, but is not limited to, any one of semiconductor materials, insulating materials, and metal materials; the material of the fourth dielectric film 3b includes, but is not limited to, any one of semiconductor materials, insulating materials, and metal materials.

[0040] In this embodiment, the thickness of the second film system 3 in the first direction is 10 nanometers to 100 micrometers, such as 100 nanometers, 1.5 micrometers, or 5 micrometers. This range directly affects the reflection loss of the fundamental frequency light at the interface between the semiconductor gain layer 2 and the nonlinear crystal 4. If the thickness of the second film system 3 in the first direction is too thin, it will cause fluctuations in the reflectivity of the second film system 3.

[0041] In other embodiments, the thickness of the second film system in the first direction is not limited thereto.

[0042] In one embodiment, the third film system 5 includes alternately stacked fifth dielectric films 5a and sixth dielectric films 5b, and the refractive index of the fifth dielectric film 5a is greater than that of the sixth dielectric film 5b. In one embodiment, the number of layers of the fifth dielectric film 5a is one or more, and the number of layers of the sixth dielectric film 5b is one or more. The number of layers of the fifth dielectric film 5a and the sixth dielectric film 5b is the same. Figure 1 For illustration, the number of layers of the fifth dielectric film 5a is three, and the number of layers of the sixth dielectric film 5b is three. In other embodiments, the number of layers of the fifth dielectric film and the sixth dielectric film is not limited.

[0043] In one embodiment, the material of the fifth dielectric film 5a includes but is not limited to any one of semiconductor materials, insulating materials, and metal materials; the material of the sixth dielectric film 5b includes but is not limited to any one of semiconductor materials, insulating materials, and metal materials.

[0044] In one embodiment, the semiconductor gain layer 2 includes alternately stacked quantum well layers 2b and barrier layers 2a, wherein the number of layers of the barrier layer 2a is greater than or equal to two; the number of layers of the quantum well layer 2b is one or more. The barrier layers 2a are both adjacent to the first film system 1 and away from the first film system 1 in the semiconductor gain layer 2. Figure 1 For illustration, the number of layers of the barrier layer 2a is four, and the number of layers of the quantum well layer 2b is three. In other embodiments, the number of layers of the barrier layer and the quantum well layer is not limited.

[0045] In one embodiment, the semiconductor light-emitting structure further includes: a substrate layer 6, located on the side of the first film system 1 away from the semiconductor gain layer 2.

[0046] In one embodiment, the material of the substrate layer 6 includes but is not limited to any one of GaAs, GaN, GaSb, InP, and Si.

[0047] Another embodiment of the present invention further provides a method for manufacturing a semiconductor light-emitting structure, and the semiconductor light-emitting structure is a surface-emitting semiconductor light emitter, refer to Figure 5 , including: S1: Form a semiconductor gain layer on one side of the first film system in the first direction; S2: Form a second film system on one side surface of the nonlinear crystal in the first direction, and form a third film system on the other side surface of the nonlinear crystal in the first direction; S3: Bond the side surface of the second film system away from the nonlinear crystal to the side surface of the semiconductor gain layer away from the first film system; the first film system, the semiconductor gain layer, the second film system, the nonlinear crystal, and the third film system are integrated together; Among them, the semiconductor gain layer is used for lasing fundamental frequency light, and the nonlinear crystal is used for converting the fundamental frequency light into frequency-converted light; the frequency-converted light is used to exit from the third film system; a first resonant cavity for the fundamental frequency light is formed between the first film system and the third film system; a second resonant cavity for the frequency-converted light is formed between the second film system and the third film system; the nonlinear crystal is integrated inside the first resonant cavity; among them, the reflectivity of the second film system for the fundamental frequency light is less than that of the first film system for the fundamental frequency light and less than that of the third film system for the fundamental frequency light; the reflectivity of the second film system for the frequency-converted light is higher than that of the third film system for the frequency-converted light; the reflectivity of the third film system for the frequency-converted light is less than that of the third film system for the fundamental frequency light.

[0048] In this embodiment, the surface of the second film system 3 facing away from the nonlinear crystal 4 is bonded to the surface of the semiconductor gain layer 2 facing away from the first film system 1 by intermolecular van der Waals forces; alternatively, the surface of the second film system 3 facing away from the nonlinear crystal 4 is bonded to the surface of the semiconductor gain layer 2 facing away from the first film system 1 by mechanical fixing process, eutectic melting process or organic adhesion process. Directly integrating the surface of the semiconductor gain layer 2 facing away from the first film system 1 with the combined structure of the nonlinear crystal 4, the second film system 3 and the third film system 5 simplifies the complex optical path collimation and tuning processes in the preparation process of the traditional semiconductor light-emitting structure, and the process implementation is simple; at the same time, the reflectivity of the third film system 5 for the frequency-converted light is less than that of the third film system 5 for the fundamental frequency light, and the third film system 5 is used as the output port of the semiconductor light-emitting structure. Integrating the nonlinear crystal 4 inside the first resonant cavity A, on the one hand, makes the intracavity power density of the semiconductor light-emitting structure relatively high, and the conversion efficiency of the frequency-converted light is positively correlated with the intracavity power density. Therefore, the frequency-converted light has higher conversion efficiency and output power; on the other hand, it replaces various spatial optical elements in the traditional semiconductor light-emitting structure, greatly reducing the volume of the semiconductor light-emitting structure. In summary, it can take into account the small volume of the semiconductor light-emitting structure and replace the traditional semiconductor light-emitting structure to complete optical frequency conversion, so that the semiconductor light-emitting structure has the characteristics of high output power and low divergence angle.

[0049] In other embodiments, the manner of bonding the surface of the second film system facing away from the nonlinear crystal to the surface of the semiconductor gain layer facing away from the first film system includes other bonding methods.

[0050] In one embodiment, the method for preparing a semiconductor light-emitting structure further includes: providing a substrate layer 6, and forming a first film system 1 on one side of the substrate layer 6; in the step of forming a semiconductor gain layer 2 on one side of the first film system 1 along a first direction, forming the semiconductor gain layer 2 on the side of the first film system 1 facing away from the substrate layer 6 along the first direction.

[0051] The process of forming the first film system 1 on one side of the base layer 6 includes, but is not limited to, one of metal-organic chemical vapor deposition process, molecular beam epitaxy process, magnetron sputtering process, and evaporation coating process; the process of forming the second film system 3 on the surface of the nonlinear crystal 4 along one side of the first direction includes, but is not limited to, one of metal-organic chemical vapor deposition process, molecular beam epitaxy process, magnetron sputtering process, and evaporation coating process; the process of forming the third film system 5 on the surface of the nonlinear crystal 4 along the other side of the first direction includes, but is not limited to, one of metal-organic chemical vapor deposition process, molecular beam epitaxy process, magnetron sputtering process, and evaporation coating process.

[0052] For the structural description and material description of the semiconductor gain layer 2, the structural description and material description of the first film system 1, the structural description and material description of the second film system 3, and the structural description and material description of the third film system 5, refer to the description of the foregoing embodiments.

[0053] In this embodiment, the surface of the semiconductor gain layer 2 on one side in the first direction is connected to the first film system 1, and the surface of the semiconductor gain layer 2 on the other side in the first direction is connected to the second film system 3; the surface of the nonlinear crystal 4 on one side in the first direction is connected to the second film system 3, and the surface of the nonlinear crystal 4 on the other side in the first direction is connected to the third film system 5.

[0054] Obviously, the above embodiments are merely examples for clear illustration and not limitations on the implementation manners. For those of ordinary skill in the art, other different forms of changes or modifications can be made based on the above description. It is not necessary and impossible to list all the implementation manners here. And the obvious changes or modifications derived therefrom are still within the protection scope of the present invention.

Claims

1. A semiconductor light-emitting structure, the semiconductor light-emitting structure being a surface-emitting semiconductor light-emitter, characterized in that, include: A first film system, a semiconductor gain layer, a second film system, a nonlinear crystal and a third film system are sequentially arranged and integrated along a first direction; The semiconductor gain layer is used to lasing fundamental frequency light, and the nonlinear crystal is used to convert the fundamental frequency light into frequency conversion light; the frequency conversion light is used to be emitted from the third film system; Wherein, a first resonant cavity for the fundamental frequency light is formed between the first film system and the third film system; a second resonant cavity for the frequency conversion light is formed between the second film system and the third film system; and the nonlinear crystal is integrated inside the first resonant cavity; Among them, the reflectivity of the second film system to the fundamental frequency light is lower than the reflectivity of the first film system to the fundamental frequency light and lower than the reflectivity of the third film system to the fundamental frequency light; the reflectivity of the second film system to the frequency-converted light is higher than the reflectivity of the third film system to the frequency-converted light; the reflectivity of the third film system to the frequency-converted light is lower than the reflectivity of the third film system to the fundamental frequency light.

2. The semiconductor light-emitting structure according to claim 1, wherein, The thickness of the second film along the first direction is 10 nm-100 um.

3. The semiconductor light-emitting structure according to claim 1, wherein The reflectivity of the first film system to the fundamental frequency light is greater than or equal to 80%; the reflectivity of the second film system to the fundamental frequency light is less than or equal to 30%; and the reflectivity of the third film system to the fundamental frequency light is greater than or equal to 80%.

4. The semiconductor light-emitting structure according to claim 1, wherein, The reflectivity of the second film system to the frequency-converted light is greater than or equal to 80%; the reflectivity of the third film system to the frequency-converted light is less than or equal to 30%.

5. The semiconductor light-emitting structure according to claim 1, wherein, Also includes: The base layer is located on a side of the first film system away from the semiconductor gain layer.

6. The semiconductor light-emitting structure according to claim 1, characterized in that, The first film system includes a first dielectric film and a second dielectric film alternately stacked, and the refractive index of the first dielectric film is greater than the refractive index of the second dielectric film; The second film system includes a third dielectric film and a fourth dielectric film that are alternately stacked, and the refractive index of the third dielectric film is greater than the refractive index of the fourth dielectric film; The third film system includes a fifth dielectric film and a sixth dielectric film that are alternately stacked, and the refractive index of the fifth dielectric film is greater than the refractive index of the sixth dielectric film.

7. The semiconductor light-emitting structure according to claim 1, characterized in that, The surface of the semiconductor gain layer on one side of the first direction is connected to the first film system, and the surface of the semiconductor gain layer on the other side of the first direction is connected to the second film system; the surface of the nonlinear crystal on one side of the first direction is connected to the second film system, and the surface of the nonlinear crystal on the other side of the first direction is connected to the third film system.

8. A method for preparing a semiconductor light-emitting structure, the semiconductor light-emitting structure being a surface-emitting semiconductor light-emitter, characterized in that, include: forming a semiconductor gain layer on one side of the first film system along a first direction; Forming a second film system on one side surface of the nonlinear crystal along the first direction, and forming a third film system on the other side surface of the nonlinear crystal along the first direction; Combine the surface of the second film system facing away from the nonlinear crystal and the surface of the semiconductor gain layer facing away from the first film system; integrate the first film system, the semiconductor gain layer, the second film system, the nonlinear crystal and the third film system; Among them, the semiconductor gain layer is used for lasing fundamental frequency light, and the nonlinear crystal is used for converting the fundamental frequency light into frequency-converted light; the frequency-converted light is used for emitting from the third film system; a first resonant cavity for the fundamental frequency light is formed between the first film system and the third film system; a second resonant cavity for the frequency-converted light is formed between the second film system and the third film system; the nonlinear crystal is integrated inside the first resonant cavity; Among them, the reflectivity of the second film system for the fundamental frequency light is less than the reflectivity of the first film system for the fundamental frequency light and less than the reflectivity of the third film system for the fundamental frequency light; the reflectivity of the second film system for the frequency-converted light is higher than the reflectivity of the third film system for the frequency-converted light; the reflectivity of the third film system for the frequency-converted light is less than the reflectivity of the third film system for the fundamental frequency light.

9. The manufacturing method of the semiconductor light-emitting structure according to claim 8, characterized in that The surface of the second film system facing away from the nonlinear crystal is bonded to the surface of the semiconductor gain layer facing away from the first film system by intermolecular van der Waals forces; Alternatively, the surface of the second film system facing away from the nonlinear crystal is bonded to the surface of the semiconductor gain layer facing away from the first film system by a mechanical fixing process, a eutectic melting process or an organic adhesion process.

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