Micro-LED device and preparation method thereof, and head-mounted display equipment

Abstract

The invention discloses a Micro-LED device, a preparation method thereof and a head-mounted display device. The Micro-LED device comprises a substrate, an n-type GaN layer, a multi-quantum well active region layer, a p-type GaN layer and a p-type electrode layer which are sequentially stacked. The n-type electrode penetrates through the substrate and extends to the n-type GaN layer; wherein the p-type electrode layer comprises a plurality of p-type electrode units which are distributed on the p-type GaN layer in a patterning manner, and a gap is reserved between every two adjacent p-type electrode layers; the multi-quantum well active region layer is a complete structure layer which is not etched; the number of the n-type electrodes is multiple, and each n-type electrode directly faces one p-type electrode layer. According to the invention, on the basis that the p-type electrode layer in the Micro-LED device is subjected to patterned etching and the multi-quantum well active region layer is not damaged by etching, the independent light-emitting control function of different light-emitting pixel points is realized, and the working performance of the Micro-LED device is ensured to a great extent.

Description

Technical Field

[0001] The present invention relates to the field of Micro-LED devices, and in particular to a Micro-LED device and a method for manufacturing the same, as well as a head-mounted display device. Background Art

[0002] Micro-LED (micro light-emitting diode) devices have advantages such as high resolution, high brightness, and fast response, and are widely used in display components of virtual reality (VR) and augmented reality (AR) technologies.

[0003] In a Micro-LED, a structural layer for realizing its light-emitting function needs to be processed to form a plurality of light-emitting pixel points. By independently controlling whether each light-emitting pixel point emits light or not, various different light-emitting patterns can be output by the Micro-LED device.

[0004] However, when processing each light-emitting pixel point of the Micro-LED device, the structural layer of the Micro-LED device is inevitably damaged, which affects the working performance of the Micro-LED device to a certain extent. Summary of the Invention

[0005] The purpose of the present invention is to provide a Micro-LED device and a method for manufacturing the same, as well as a head-mounted display device, which can improve the working performance of the Micro-LED device to a certain extent.

[0006] To solve the above technical problems, the present invention provides a Micro-LED device, including a substrate, an n-type GaN layer, a multi-quantum well active region layer, a p-type GaN layer, and a p-type electrode layer stacked in sequence; an n-type electrode penetrating the substrate and extending to the n-type GaN layer.

[0007] Wherein, the p-type electrode layer includes a plurality of p-type electrode units patterned and distributed on the p-type GaN layer, with a gap left between adjacent two p-type electrode units; and the multi-quantum well active region layer is an unetched complete structural layer.

[0008] The n-type electrode includes a plurality of electrodes, and each n-type electrode faces one p-type electrode unit.

[0009] In an optional embodiment of the present application, a groove structure is provided at a position corresponding to the gap between adjacent two p-type electrode units on the p-type GaN layer.

[0010] In an optional embodiment of the present application, the groove wall of the groove structure forms an angle of 0 to 45° with the vertical direction.

[0011] In an optional embodiment of the present application, a reflective film layer is provided on the groove wall of the groove.

[0012] In an optional embodiment of the present application, the reflective film layer is a DBR reflection layer formed by alternately arranging structural layers with two different refractive indices.

[0013] In an optional embodiment of the present application, the n-type GaN layer is a complete structural layer that cannot be etched.

[0014] In an optional embodiment of the present application, a GaN buffer layer is further provided between the substrate and the n-type GaN layer.

[0015] In an optional embodiment of the present application, the width of the n-type electrode is smaller than the width of the p-type electrode.

[0016] A method for manufacturing a Micro-LED device, which is used to process and form the Micro-LED device as described in any one of the above, the manufacturing method includes:

[0017] Stack an n-type GaN layer, a multi-quantum well active region layer, a p-type GaN layer, and a p-type electrode layer on the substrate layer by layer in sequence;

[0018] Pattern-etch the p-type electrode layer to form a plurality of p-type electrode layer units, and there is a gap between two adjacent p-type electrode layer units;

[0019] Corresponding n-type electrodes are provided through the substrate opposite to each p-type electrode layer unit.

[0020] In an optional embodiment of the present application, after pattern-etching the p-type electrode layer to form a plurality of p-type electrode layer units, it further includes:

[0021] Etch the gap position between two adjacent p-type electrode layer units on the p-type GaN layer to form a groove structure.

[0022] In an optional embodiment of the present application, the groove wall of the groove structure forms an angle of 0 to 45° with the vertical direction;

[0023] After etching the gap position between two adjacent p-type electrode layer units on the p-type GaN layer to form a groove structure, it further includes:

[0024] Alternately form structural layers with two different refractive indices on the groove wall of the groove structure to form a DBR reflection layer.

[0025] In an alternative embodiment of the present application, an n-type GaN layer, a multi-quantum well active region layer, a p-type GaN layer, and a p-type electrode layer are sequentially stacked layer by layer on a substrate, including:

[0026] A GaN buffer layer, an n-type GaN layer, a multi-quantum well active region layer, a p-type GaN layer, and a p-type electrode layer are sequentially stacked on the substrate.

[0027] A head-mounted display device includes the Micro-LED device as described in any one of the above, and the optical element disposed on the output optical path of the Micro-LED device.

[0028] A Micro-LED device provided by the present invention, a preparation method thereof, and a head-mounted display device. The Micro-LED device includes a substrate, an n-type GaN layer, a multi-quantum well active region layer, a p-type GaN layer, and a p-type electrode layer that are sequentially stacked; an n-type electrode that penetrates the substrate and extends to the n-type GaN layer; wherein, the p-type electrode layer includes a plurality of p-type electrode units patterned and distributed on the p-type GaN layer, and there is a gap between adjacent two p-type electrode layers; the n-type electrode includes a plurality of electrodes, and each n-type electrode faces a p-type electrode layer.

[0029] In the Micro-LED device of the present application, when forming each different light-emitting pixel point, not all the structural layers for realizing the light-emitting function are etched and cut, but only the outermost p-type electrode layer in the Micro-LED device is patterned and etched. The area where each p-type electrode unit is located after etching the p-type electrode layer is the area of a light-emitting pixel point; in practical applications, to output light from a light-emitting pixel point at a certain position, only the p-type electrode unit at the corresponding position and the n-type electrode facing the p-type electrode unit need to be connected to the supply voltage; thereby enabling the independent light-emitting control function of each different light-emitting pixel point on the basis that the multi-quantum well active region layer in the Micro-LED device is not etched and damaged, and avoiding the problem of the multi-quantum well active region layer being etched and damaged, which greatly ensures the working performance of the Micro-LED device. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] In order to more clearly illustrate the technical solutions of the embodiments of the present invention or the prior art, the following will briefly introduce the drawings required for describing the embodiments or the prior art. Obviously, the following drawings are only some embodiments of the present invention. For those of ordinary skill in the art, other drawings can be obtained based on these drawings without creative efforts.

[0031] Figure 1 It is a schematic cross-sectional structure diagram of the Micro-LED device provided by the embodiment of the present application;

[0032] Figure 2 This is a schematic flow chart of a method for manufacturing a Micro-LED device provided by an embodiment of the present application. Detailed implementation manners

[0033] In a Micro-LED device, the key structural layer for realizing the light-emitting function is the multi-quantum well active region layer; during the process of manufacturing a Micro-LED device, generally, after forming a large-area multi-quantum well active region layer, patterning etching is performed on the multi-quantum well active region layer; and inevitably, sidewall damage will occur on the sidewalls of multiple small-area and independent multi-quantum well active region layers formed after etching, which will affect the working performance of a single multi-quantum well active region layer to a certain extent; and as the resolution of the Micro-LED device gradually increases, the size of the multi-quantum well active region layer in each light-emitting pixel also becomes smaller and smaller, which results in the proportion of the sidewall area of the multi-quantum well active region layer in the surface area of the entire multi-quantum well active region layer gradually increasing, making the sidewall effect more serious, and further causing the working performance of the entire Micro-LED device to decline significantly.

[0034] Therefore, the present application provides a Micro-LED device and a manufacturing method thereof that do not require etching of the multi-quantum well active region layer and can avoid sidewall damage, and also provides a head-mounted display device, which can improve the working performance of the Micro-LED device to a certain extent.

[0035] In order to enable those skilled in the art to better understand the solution of the present invention, the present invention will be further described in detail below with reference to the accompanying drawings and specific implementation manners. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without making creative efforts shall fall within the protection scope of the present invention.

[0036] As Figure 1 shown, Figure 1 This is a schematic cross-sectional structure diagram of a Micro-LED device provided by an embodiment of the present application.

[0037] In a specific embodiment of the present application, the Micro-LED device may include:

[0038] A substrate 1, an n-type GaN layer 3, a multi-quantum well active region layer 4, a p-type GaN layer 5, and a p-type electrode layer 6 stacked in sequence; an n-type electrode 7 penetrating the substrate 1 and extending to the n-type GaN layer 3;

[0039] Among them, the p-type electrode layer 6 includes a plurality of p-type electrode units 61 patterned and distributed on the p-type GaN layer 5, with a gap left between two adjacent p-type electrode units 61; and the multiple quantum well active region layer 4 is an intact structural layer that has not been etched.

[0040] There are a plurality of n-type electrodes 7, and each n-type electrode 7 faces one p-type electrode unit 61.

[0041] As Figure 1 shown, the key structure for realizing light emission in the Micro-LED device lies in the multiple quantum well active region layer 4. An n-type GaN layer 3 and a p-type GaN layer 5 are respectively provided on the upper and lower surfaces of the multiple quantum well active region layer 4; when the n-type electrode 7 and the p-type electrode unit 61 are connected to the supply voltage, the multiple quantum well active region layer 4 can be excited to output light. In practical applications, a GaN buffer layer 2 can also be provided between the substrate 1 and the n-type GaN layer 3 to provide nucleation centers and reduce the defect density of the n-type GaN layer 3.

[0042] On this basis, in order to form each light-emitting pixel in the Micro-LED device in this application, the p-type electrode layer 6 is patterned and etched according to the distribution pattern of the light-emitting pixels, so that the p-type electrode layer 6 is etched to form a number of p-type electrode units 61 distributed at intervals from each other. The area where each p-type electrode unit 61 is located corresponds to the area where each light-emitting pixel is located; and for each n-type electrode 7 extending from the substrate 1 to the n-type GaN layer 3, an n-type electrode 7 is provided facing each p-type electrode unit 61, and this n-type electrode 7 is different from the p-type electrode unit 61 in that it is a planar thin film structure. Each n-type electrode 7 is generally in a strip-shaped columnar structure, and each n-type electrode 7 faces the center of one p-type electrode unit 61; thus, the structural layer between each pair of n-type electrodes 7 and p-type electrode units 61 also to a certain extent is equivalent to the structure of a light-emitting pixel. In practical applications, after a pair of relatively arranged n-type electrodes 7 and p-type electrode units 61 are connected to the supply voltage, a partial area of the multiple quantum well active region layer 4 located between this pair of n-type electrodes 7 and p-type electrode units 61 can be excited, so that excitation light is generated and the light is output from this p-type electrode unit 61. And for the gap area between two adjacent p-type electrode units 61, since the supply voltage is not connected through the p-type electrode unit 61, a non-light-emitting dark area will be formed in the gap area between the two p-type electrode units 61. Thus, the areas where each p-type electrode unit 61 is located can achieve the same light-emitting function as each light-emitting pixel in a conventional Micro-LED device.

[0043] Based on the above discussion, in this embodiment, only the p-type electrode layer 6 is patterned and etched according to the distribution pattern of the light-emitting pixel points, without etching the multi-quantum well active region layer 4 to form a number of small units. That is to say, the multi-quantum well active region layer 4 in this embodiment is an unetched complete structure layer, and the same light-emitting function as that of the multi-quantum well active region layer 4 being etched to form a number of light-emitting pixel point structures can also be realized in the Micro-LED device. Since the structure layer of the multi-quantum well active region layer 4 is not etched in this embodiment, the multi-quantum well active region layers 4 of each light-emitting pixel point still maintain an integrally formed complete structure layer. Thus, the problem that the sidewall damage exists on the sidewall of each small structural unit due to the multi-quantum well active region layer 4 being etched into a number of small structural units, resulting in the degradation of the working performance of the multi-quantum well active region layer 4, can be avoided. And even if the resolution of the Micro-LED device is increased, only the size of each p-type electrode unit 6 needs to be reduced, and the working performance of the Micro-LED device will not be degraded. It can be seen that the Micro-LED device in this application can increase the resolution of the Micro-LED device under the condition of ensuring that the working performance does not decrease.

[0044] In addition, in this embodiment, only the p-type electrode layer 6 needs to be patterned and etched, and the remaining structural layers do not need to be etched. In particular, it is not necessary to etch the multi-quantum well active region layer and passivate the sidewalls formed by etching, which obviously simplifies the processing technology of the Micro-LED device to a certain extent.

[0045] Further optionally, the width of each n-type electrode 7 can be smaller than the width of the corresponding p-type electrode unit 61 facing it. Thus, to a certain extent, the current flow path between each n-type electrode 7 and its corresponding p-type electrode unit 61 is more concentratedly distributed at the central position of the n-type electrode 7 and the corresponding p-type electrode unit 61, ensuring that the current paths between each pair of n-type electrodes 7 and their corresponding p-type electrode units 61 are independent of each other.

[0046] In another optional embodiment of the present application, the Micro-LED device may further include:

[0047] A groove structure 51 is provided at the gap position between two adjacent p-type electrode units 61 corresponding to the p-type GaN layer 5.

[0048] As Figure 1 shown, in Figure 1In the illustrated embodiment, on the basis of patterning and etching the p-type electrode layer 6, the p-type GaN layer 5 is further etched accordingly; thereby, several small unit structures of the p-type GaN layer 5 are also correspondingly formed. Thus, when the p-type electrode layer 6 and the corresponding n-type electrode 7 are connected to supply a voltage, it is possible to better avoid the current flowing into the gap region between two corresponding p-type electrode units 61 in the p-type GaN layer 5 region, and further avoid the problem of a small amount of light being output from the gap region between two adjacent p-type electrode units 61, thereby ensuring the resolution of the Micro-LED device to a certain extent.

[0049] For the groove structure 51 etched in the p-type GaN layer 5, preferably, an inclined groove wall with an angle of 0 to 45° between the side wall and the vertical direction can be adopted, so that even if part of the light output from the multi-quantum well active region layer 4 is incident on the side wall of the groove structure 51, it can be reflected and output from the region where the p-type electrode unit 61 is located.

[0050] In addition, in order to ensure that all the light incident on the side wall of the groove structure 51 can be reflected, in another alternative embodiment of the present application, a reflective film layer 8 can be further provided on the groove wall of the groove structure 51. The reflective film layer 8 can be set as a DBR (distributed Bragg reflector) reflection layer formed by alternately arranging two different refractive index structure layers such as TiO2 and SiO2, thereby improving the light extraction efficiency of each region where the p-type electrode unit 61 is located to a certain extent.

[0051] It can be understood that in practical applications, to avoid light output from the gap between two adjacent p-type electrode units 61, the p-type GaN layer 5 may not be etched, and a light-blocking layer with a light-blocking effect can be directly filled in the gap between two adjacent p-type electrode units 61, which can also ensure the high resolution of the Micro-LED device to a certain extent.

[0052] Furthermore, the n-type GaN layer 3 between the multi-quantum well active region layer 4 and the substrate 1 can also be an unetched complete structure layer; thereby, the device processing technology can be simplified to a certain extent.

[0053] Of course, in practical applications, the n-type GaN layer 3 can also be etched to form small structural units corresponding to the p-type electrodes, and an insulating layer is filled between adjacent structural units, which also does not affect the implementation of the technical solution of the present application.

[0054] In the Micro-LED device of the present application, only the outermost p-type electrode layer is patterned and etched. The structure between each p-type electrode unit formed after etching the p-type electrode layer and the n-type electrode facing the p-type electrode unit is equivalent to the structure of a light-emitting pixel, and the area where each p-type electrode unit is located is the area of a light-emitting pixel. In practical applications, only by connecting the p-type electrode unit and the corresponding n-type electrode to the supply voltage can the light output of the light-emitting pixel be realized, without etching the multi-quantum well active region layer. Thus, it can be seen that in the present application, the independent light-emitting control function of each different light-emitting pixel can also be realized on the basis that the multi-quantum well active region layer is not etched and damaged, and the problem of sidewall damage caused by etching the multi-quantum well active region layer is avoided, which greatly ensures the working performance of the Micro-LED device.

[0055] An embodiment of a method for manufacturing a Micro-LED device is also provided in the present application, as Figure 2 shown, Figure 2 is a schematic flow chart of the method for manufacturing the Micro-LED device provided by the embodiment of the present application. This manufacturing method is mainly applied to manufacture the Micro-LED device described in any one of the above.

[0056] The method for manufacturing the Micro-LED device may include:

[0057] S1: Stack an n-type GaN layer, a multi-quantum well active region layer, a p-type GaN layer, and a p-type electrode layer on the substrate layer by layer in sequence.

[0058] It should be noted that in the process of stacking an n-type GaN layer 3, a multi-quantum well active region layer 4, a p-type GaN layer 5, and a p-type electrode layer 6 on the substrate 1 layer by layer, a GaN buffer layer 2 can be formed on the substrate 1 first.

[0059] In addition, the substrate 1 in this embodiment may specifically adopt a sapphire substrate.

[0060] In practical applications, a GaN buffer layer 2, an n-type GaN layer 3, a multi-quantum well active region layer 4, and a p-type GaN layer 5 can be epitaxially grown on the substrate 1 in sequence by using metal organic chemical vapor deposition (MOCVD) technology, and then a p-type electrode layer 6 can be prepared on the p-type GaN layer by using technologies such as electron beam evaporation or magnetron sputtering.

[0061] It can be understood that the GaN buffer layer 2, the n-type GaN layer 3, the multi-quantum well active region layer 4, the p-type GaN layer 5, and the p-type electrode layer 6 formed at this time should all be large-area integral structure layers.

[0062] S2: Pattern etch the p-type electrode layer to form multiple p-type electrode layer units, with a gap left between adjacent two p-type electrode layer units.

[0063] During the process of pattern etching the p-type electrode layer, the distribution pattern of the formed p-type electrode layer units 61 is the same as that of the light-emitting pixel points required in the Micro-LED device. For example, each p-type electrode unit 61 can be distributed in an electrode array, or can be distributed according to other distribution rules, which will not be elaborated too much in this embodiment.

[0064] On this basis, use an etching process to etch the p-type GaN layer 5 to etch out a groove structure 51. The inclination angle range of the side wall of the groove structure 51 is from 0 to 45°, and the depth of the groove structure 51 is 5 / 10 to 9 / 10 of the thickness of the p-type GaN layer 5. This groove structure 51 can prevent current from spreading to adjacent p-type electrode units 61.

[0065] On the basis of forming the groove structure 51 on the p-type GaN layer 5, a reflective film layer 8 can be further formed on the groove wall of the groove structure 51; the reflective film layer 8 can specifically be a DBR reflection layer formed by alternately arranging two structural layers with different refractive indexes. For example, TiO2 / SiO2 can be alternately arranged; the DBR reflection layer on the groove wall of the groove structure 51 with a certain inclination angle can reflect the light emitted by the multi-quantum well active region layer 4, improving the light extraction efficiency.

[0066] S3: Set corresponding n-type electrodes through the substrate opposite to each p-type electrode layer unit.

[0067] During the process of forming the n-type electrode 7, the sapphire substrate 1 can be first etched and thinned to a set thickness; then an n-electrode groove is etched on the substrate 1, and the n-electrode groove penetrates the substrate and extends to the n-type GaN layer; each n-electrode groove is opposite to a p-type electrode unit 61, and the width of the n-type groove is smaller than the width of the p-type electrode unit 61.

[0068] After forming the n-type electrode groove, n-type electrode material can be filled in the n-type electrode groove through techniques such as electron beam evaporation or magnetron sputtering, and the n-type electrode 7 can be prepared, and thus the Micro-LED chip can be obtained.

[0069] In this embodiment, during the process of fabricating a Micro-LED device, the p-type electrode layer is patterned and etched to form a plurality of p-type electrode units, enabling the Micro-LED device to output light in the form of multiple light-emitting pixel points. There is no need to etch and damage the multi-quantum well active region layer, ensuring the integrity of the multi-quantum well active region layer, and thus avoiding the problem of sidewall breakage caused by the etching of the multi-quantum well active region layer. This improves the working performance of the Micro-LED device to a certain extent and simplifies the device processing technology to a certain extent.

[0070] This application also provides an embodiment of a head-mounted display device, which includes the Micro-LED device described in any one of the above, and an optical element disposed on the output optical path of the Micro-LED device.

[0071] The head-mounted display device in this application can be an AR display device, a VR display device, or other types of display devices, and there is no specific limitation in this application. The head-mounted display device in this embodiment uses the Micro-LED device described in any one of the above as the light source device, which can simplify the processing technology of the light source device in the head-mounted display device on the basis of ensuring the working performance of the light source device, and thus simplify the manufacturing cost of the entire head-mounted display device.

[0072] It should be noted that in this article, relational terms such as first and second are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any actual relationship or order between these entities or operations. Moreover, the term "comprising", "including" or any other variant thereof is intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes the inherent elements thereof. Without further limitation, the element defined by the statement "including a..." does not exclude the existence of additional identical elements in the process, method, article or device including the element. In addition, the parts of the above technical solutions provided in the embodiments of this application that are consistent with the corresponding technical solutions in the prior art in terms of implementation principles are not described in detail to avoid excessive elaboration.

[0073] Specific examples are used in this article to elaborate on the principles and implementation methods of the present invention. The description of the above embodiments is only used to help understand the method and its core idea of the present invention. It should be pointed out that for those of ordinary skill in the art, without departing from the principle of the present invention, several improvements and modifications can be made to the present invention, and these improvements and modifications also fall within the protection scope of the claims of the present invention.

Claims

1. A Micro-LED device, characterized in that, It includes a substrate, an n-type GaN layer, a multi-quantum well active region layer, a p-type GaN layer, and a p-type electrode layer that are sequentially stacked; an n-type electrode that penetrates the substrate and extends to the n-type GaN layer; Among them, the p-type electrode layer includes a plurality of p-type electrode units patterned and distributed on the p-type GaN layer, with a gap left between two adjacent p-type electrode units; and the multi-quantum well active region layer is an intact structural layer that has not been etched; There are a plurality of the n-type electrodes, and each n-type electrode faces one p-type electrode unit.

2. The Micro-LED device according to claim 1, wherein A groove structure is provided at a position corresponding to the gap between two adjacent p-type electrode units on the p-type GaN layer.

3. The Micro-LED device according to claim 2, wherein The groove wall of the groove structure forms an angle of 0 to 45° with the vertical direction.

4. The Micro-LED device according to claim 2 or 3, characterized in that, A reflective film layer is provided on the groove wall of the groove.

5. The Micro-LED device according to claim 4, characterized in that, The reflective film layer is a DBR reflective layer formed by alternately arranging structural layers with two different refractive indices.

6. The Micro-LED device according to claim 1, wherein The n-type GaN layer is an intact structural layer that cannot be etched.

7. The Micro-LED device according to claim 1, characterized in that, A GaN buffer layer is further provided between the substrate and the n-type GaN layer.

8. The Micro-LED device according to claim 1, characterized in that, The width of the n-type electrode is smaller than the width of the p-type electrode unit.

9. A method for preparing a Micro-LED device, characterized in that, For processing and forming the Micro-LED device according to any one of claims 1 to 8, the manufacturing method includes: Sequentially stacking an n-type GaN layer, a multi-quantum well active region layer, a p-type GaN layer, and a p-type electrode layer on the substrate; Performing patterned etching on the p-type electrode layer to form a plurality of p-type electrode layer units, with a gap left between two adjacent p-type electrode layer units; Penetrating the substrate and facing each p-type electrode layer unit, a corresponding n-type electrode is provided.

10. The manufacturing method of the Micro-LED device according to claim 7, characterized in that, After performing patterned etching on the p-type electrode layer to form a plurality of p-type electrode layer units, it further includes: Etching a groove structure at a position corresponding to the gap between two adjacent p-type electrode layer units on the p-type GaN layer.

11. The manufacturing method of the Micro-LED device according to claim 8, characterized in that, The groove wall of the groove structure forms an angle of 0 to 45° with the vertical direction; After etching a groove structure at a position corresponding to the gap between two adjacent p-type electrode layer units on the p-type GaN layer, it further includes: Alternately forming structural layers with two different refractive indices on the groove wall of the groove structure to form a DBR reflective layer.

12. The manufacturing method of the Micro-LED device according to claim 7, wherein, Sequentially stacking an n-type GaN layer, a multi-quantum well active region layer, a p-type GaN layer, and a p-type electrode layer on the substrate, including: Sequentially stacking a GaN buffer layer, an n-type GaN layer, a multi-quantum well active region layer, a p-type GaN layer, and a p-type electrode layer on the substrate.

13. A head-mounted display device, characterized in that, It includes the Micro-LED device according to any one of claims 1 to 8, and the optical element provided on the output optical path of the Micro-LED device.

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