Gas recovery system, substrate processing system and related apparatus and method for semiconductor manufacturing

Abstract

The present disclosure generally relates to gas recovery systems, substrate processing systems, and related apparatuses and methods for semiconductor manufacturing. In one or more embodiments, unreacted gas from the chamber may be used, recovered, and used additionally one or more times. In one embodiment, a gas recovery system includes a pump configured to be fluidly connected to one or more outlet channels of a processing chamber to exhaust gas from the processing chamber. The system includes one or more filtration devices in fluid communication with the pump such that gas flows from the pump to the one or more filtration devices. The one or more filtration devices are configured to remove one or more impurities from the gas. The system includes a gas supply system in fluid communication with one or more filtration devices such that filtered gas flows to the gas supply system.

Description

Technical Field

[0001] Embodiments of the present disclosure generally relate to gas recovery systems, substrate processing systems, and related equipment and methods for semiconductor manufacturing. In one or more embodiments, unreacted gases from a chamber can be used, recovered, and used one or more additional times. Background Art

[0002] Semiconductor substrates are processed for a variety of applications, including the manufacture of integrated components and micro-components. During processing (such as an epitaxial deposition process), reactant gases are used to deposit materials on the substrate and / or clean chamber components. Inert gases may also be used and some reaction gases may not fully react during processing or cleaning.

[0003] As a result, many gases are wasted in semiconductor manufacturing, which involves increased emissions and carbon footprint, increased gas consumption and energy consumption, and increased operating costs (such as material costs, delivery costs, and power costs). Such obstacles can be exacerbated by other factors, such as supply chain shortages.

[0004] Accordingly, there is a need for improved systems, equipment, and methods that facilitate a reduction in gas waste. Summary of the Invention

[0005] Embodiments of the present disclosure generally relate to gas recovery systems, substrate processing systems, and related equipment and methods for semiconductor manufacturing. In one or more embodiments, unreacted gases from a chamber can be used, recovered, and used one or more additional times.

[0006] In one embodiment, a gas recovery system for connection to a processing chamber includes a pump configured to fluidly connect to one or more outlet channels of the processing chamber to discharge gas from the processing chamber. The system includes one or more filtration devices in fluid communication with the pump such that gas flows from the pump to the one or more filtration devices. The one or more filtration devices are configured to remove one or more impurities from the gas to produce a filtered gas having a purity content of 99.9% or higher. The system further includes a gas supply system in fluid communication with the one or more filtration devices such that the filtered gas flows from the one or more filtration devices to the gas supply system. The gas supply system is configured to fluidly connect to one or more inlet channels of the processing chamber.

[0007] In one embodiment, a system for substrate processing includes a processing chamber that includes a chamber body at least partially defining an interior volume. The processing chamber includes a plurality of inlet channels, one or more outlet channels, a substrate support disposed within the interior volume, and one or more heat sources configured to heat the interior volume. The system includes a gas supply system in fluid communication with the plurality of inlet channels to supply gas to the interior volume of the processing chamber, and a gas recovery system in fluid communication between the one or more outlet channels and the gas supply system. The gas recovery system includes a pump in fluid communication with the one or more outlet channels to remove gas from the interior volume of the processing chamber. The gas recovery system includes one or more filtration devices in fluid communication between the pump and the gas supply system such that gas flows from the pump to the one or more filtration devices. The one or more filtration devices are configured to remove one or more impurities from the gas to produce a filtered gas having a purity content of 99.9% or higher. The one or more filtration devices are in fluid communication with the gas supply system such that the filtered gas flows from the one or more filtration devices to the gas supply system.

[0008] In one embodiment, a method of recovering gas for semiconductor manufacturing includes pumping gas out of an interior volume of a processing chamber. The method includes filtering the gas using a first filtration operation, filtering the gas using a second filtration operation to produce a filtered gas having a purity content of 99.9% or higher, and flowing the filtered gas to a gas supply system. The method includes using the gas supply system to reintroduce the filtered gas into the processing chamber. BRIEF DESCRIPTION OF THE DRAWINGS

[0009] To enable a detailed understanding of the manner in which the above-recited features of the present disclosure are obtained, a more particular description of the disclosure briefly summarized above may be had by reference to the embodiments, some of which are illustrated in the accompanying drawings. It will be noted, however, that the drawings illustrate only exemplary embodiments and are therefore not to be considered limiting of its scope, and may admit of other equally effective embodiments.

[0010] Figure 1 is a schematic cross-sectional view of a system for substrate processing according to one embodiment.

[0011] Figure 2 is a schematic partial view of a flush supply system of a gas supply system according to one embodiment.

[0012] Figure 3 is a schematic partial view of a cleaning supply system according to one embodiment.

[0013] Figure 4 is a schematic partial view of a processing supply system according to one embodiment.

[0014] Figure 5Schematic block diagram view of a method for recovering gases related to semiconductor manufacturing according to one embodiment.

[0015] For ease of understanding, the same reference numerals have been used, where possible, to identify the same elements common to the figures. It is contemplated that the elements and features of one embodiment may be advantageously incorporated into other embodiments without further recitation. Detailed Description

[0016] The present disclosure generally relates to gas recovery systems, substrate processing systems, and related equipment and methods for semiconductor manufacturing. In one or more embodiments, unreacted gases from a chamber can be used, recovered, and used one or more additional times.

[0017] Figure 1 Schematic cross-sectional view of a system 101 for substrate processing according to one embodiment. The system 101 includes a processing chamber 100. In one or more embodiments, the processing chamber 100 is a deposition chamber. In one embodiment that can be combined with other embodiments, the processing chamber 100 is an epitaxial deposition chamber. The processing chamber 100 is configured to grow an epitaxial film on a substrate 102. The processing chamber 100 generates a cross-flow of precursors across the top surface 150 of the substrate 102 to deposit the film.

[0018] The processing chamber 100 includes an upper body 156, a lower body 148 disposed below the upper body 156, and a flow module 112 disposed between the upper body 156 and the lower body 148. The upper body 156, the flow module 112, and the lower body 148 form a chamber body. A substrate support 106, an upper window 108 (such as an upper dome), a lower window 110 (such as a lower dome), a plurality of upper heat sources 141, and a plurality of lower heat sources 143 are disposed within the chamber body.

[0019] The substrate support 106 is disposed between the upper window 108 and the lower window 110. The substrate support 106 includes a support surface 123 for supporting the substrate 102. The plurality of upper heat sources 141 are disposed between the upper window and a lid 154. The plurality of upper heat sources 141 form part of an upper heating module 155. The lid 154 may include a plurality of sensors (not shown) disposed therein or thereon for measuring the temperature within the processing chamber 100. The plurality of lower heat sources 143 are disposed between the lower window 110 and a bottom plate 152. The plurality of lower heat sources 143 form part of a lower heating module 145. The upper window 108 is an upper dome and is formed of an energy transmissive material, such as quartz. The lower window 110 is a lower dome and is formed of an energy transmissive material, such as quartz.

[0020] In Figure 1In the illustrated embodiments, the heat sources 141, 143 are lamps. Other heat sources are contemplated, such as resistance heaters, light emitting diodes (LEDs), and / or lasers.

[0021] A processing volume 136 and a rinse volume 138 are formed between the upper window 108 and the lower window 110. The processing volume 136 and the rinse volume 138 are portions of an internal volume that is at least partially defined by the upper window 108, the lower window 110, and one or more gaskets 163.

[0022] The internal volume has a substrate support 106 disposed therein. The substrate support 106 includes a top surface on which a substrate 102 is disposed. The substrate support 106 is attached to a shaft 118. The shaft 118 is connected to a motion assembly 121. The motion assembly 121 includes one or more actuators and / or adjustment devices that provide movement and / or adjustment of the shaft 118 and / or the substrate support 106 within the processing volume 136.

[0023] The substrate support 106 may include lift rod holes 107 disposed therein. The lift rod holes 107 are sized to receive lift rods 132 for lowering and / or raising the substrate 102 from the substrate support 106 before and / or after performing a deposition process. The lift rods 132 may rest on lift rod stops 134 when the substrate support 106 is lowered from a processing position to a transfer position.

[0024] The flow module 112 includes a plurality of inlet channels, which include a plurality of processing inlet channels 114 and a plurality of purge inlet channels 164. The flow module 112 includes one or more outlet channels, which include one or more outlet channels 116. The plurality of processing inlet channels 114 and the plurality of purge inlet channels 164 are disposed on a side of the flow module 112 opposite the one or more outlet channels 116. One or more flow guides 117a, 117b are disposed below the plurality of processing inlet channels 114 and the one or more outlet channels 116. One or more flow guides 117a, 117b are disposed above the purge inlet channels 164. In one or more embodiments, the one or more flow guides 117a, 117b include a preheating ring. One or more gaskets 163 are disposed on the inner surface of the flow module 112 and protect the flow module 112 from reactive gases used during deposition operations and / or cleaning operations. The processing inlet channels 114 and the purge inlet channels 164 are each positioned to flow gas parallel to the top surface 150 of the substrate 102 disposed in the processing volume 136. The processing inlet channels 114 and the purge inlet channels 164 are fluidly connected to a gas supply system 190, which coordinates the gases to be delivered to the processing chamber 100. One or more processing gas sources 151, one or more cleaning gas sources 153, and one or more purge gas sources 162 are fluidly connected to the gas supply system 190. In one or more embodiments, the one or more processing gas sources 151 include one or more reactive gas sources and one or more carrier gas sources.

[0025] The gas recovery system 199 is fluidly connected to the gas supply system 190 to provide recovered gas to the gas supply system 190 for reuse in the processing chamber 100. The one or more outlet channels 116 are fluidly connected to an exhaust pump 157 (e.g., a vacuum pump). The exhaust pump 157 is fluidly connected to the gas recovery system 199 to pump gas from the processing chamber 100 to a first diverter 181 of the gas recovery system 199. The first diverter 181 is in fluid communication with the exhaust pump 157.

[0026] The first diverter 181 is fluidly connected to a first filter device 182. The first filter device 182 is fluidly connected to a second filter device 184. The first diverter 181 is fluidly connected to a third filter device 188. Using the first diverter 181, at least a portion of the gas discharged from the processing chamber 100 can be directed to the first filter device 182 to be recycled through the gas supply system 190 into the processing chamber 100. Using the first diverter 181, at least a portion of the gas discharged from the processing chamber 100 can be directed along a bypass line 189 that bypasses the first filter device 182 and the second filter device 184 to the third filter device 188.

[0027] If the gas is not suitable for recovery, at least a portion of such gas can be diverted to bypass line 189. If the composition is different from the composition used along gas recovery system 199, at least a portion of the gas can be diverted to bypass line 189 for recovery using an additional recovery system (and subsequently recycled to gas supply system 190). In one or more embodiments, at least a portion of the gas diverted to bypass line 189 is stored, combusted, and / or recycled to gas supply system 190 in a manner fluidly separated from first filter device 182 and second filter device 184.

[0028] The gas to be recovered along gas recovery system 199 flows from first filter device 182 to second filter device 184. Each of filter devices 182, 184, 188 can include a scrubber, an electrochemical filter, a porous ceramic adsorbent-based system, a pressure swing adsorption-based system, a Pd adsorption / release membrane-based system, and / or another type of filter device. The present disclosure contemplates that one or more of first filter device 182, second filter device 184, and / or third filter device 188 can be the same as or different from each other. In one or more embodiments, first filter device 182 and third filter device 188 each include a scrubber, and second filter device 184 includes an electrochemical filter.

[0029] The scrubber used can include a pollution control device that uses a liquid (such as water) to remove particulate matter or gas from the gas discharged from process chamber 100. The gas enters the scrubber at or near the center of the scrubber, where the liquid falls from above in the scrubber. The liquid captures contaminants that sink to the bottom, and the discharged contaminants escape through the top of the scrubber. The electrochemical filter can be a hydrogen recovery system. The electrochemical filter can be an anode, electrolyte, and cathode device, where hydrogen ions are inhaled through the anode into the electrolyte and combined in the cathode to form hydrogen gas (H2).

[0030] In one or more embodiments, the first filtering device 182 and the second filtering device 184 filter the gas (discharged from the processing chamber 100) to produce a filtered gas having a purity content of 95% or higher. The purity content is the concentration of an element (such as hydrogen gas (H2)) in atomic percentage. In one or more embodiments, the first filtering device 182 removes contaminants (e.g., pollutants) from the gas, and the second filtering device 184 separates one element (e.g., hydrogen) from other elements (such as nitrogen and / or other gases). In one or more embodiments, the purity content is 99% or higher, such as 99.9% or higher. In one or more embodiments, the purity content is at least 5N level, such that the purity content is 99.999% or higher. The gas recovery system 199 includes one or more filtering devices 182, 184. In one or more embodiments, a single filtering device may be used in the gas recovery system 199. In one or more embodiments, more than two filtering devices 182, 184 may be used in the gas recovery system 199.

[0031] After flowing through the second filtering device 184, the filtered gas is compressed by a compressor 185 that is in fluid communication with the first filtering device 182 and the second filtering device 184. A second diverter 183 is fluidly connected to the compressor 185. In one or more embodiments, each of the first diverter 181 and / or the second diverter 183 includes a valve, such as a directional valve (such as a three-way valve).

[0032] A buffer storage tank 186 is fluidly connected to the compressor 185 through the second diverter 183. In one or more embodiments, at least a portion of the filtered gas is stored (at least temporarily, e.g., for later use) in the buffer storage tank 186 before being supplied to the gas supply system 190. The buffer storage tank 186 can facilitate the pressurized filtered gas. In one or more embodiments, at least a portion of the filtered gas flows directly from the compressor 185 and flows to the gas supply system 190 for (re)injecting into the processing chamber 100.

[0033] The filtered gas is pressurized to a threshold pressure using a compressor 185 and / or a buffer tank 186. In one or more embodiments, for the filtered gas used in the processing chamber 100, the threshold pressure is equal to or greater than the operating pressure. In one or more embodiments, the operating pressure is the processing pressure used during a deposition operation in the processing chamber 100 (e.g., 600 Torr or higher, such as in the range of 750 Torr to 770 Torr). In one or more embodiments, the operating pressure is the cleaning pressure used during a cleaning operation in the processing chamber 100 and / or the rinsing pressure used during a rinsing operation in the processing chamber 100. In one or more embodiments, the threshold pressure is equal to or greater than the storage pressure (e.g., for the buffer tank 186). In one or more instances, the storage pressure is in the range of 0 bar to 10 bar. In one or more embodiments, the threshold pressure is 15 psig or higher, such as 75 psig or higher (e.g., 100 psig or higher).

[0034] The filtered gas generated using the gas recovery system 199 can be reused as a processing gas, a cleaning gas, and / or a rinsing gas. In one or more embodiments, the filtered gas includes hydrogen (H2) and has a purity content of hydrogen in atomic percentage. Other materials are contemplated for the filtered gas.

[0035] One or more process gases supplied to the gas supply system 190 using one or more process gas sources 151 can include one or more reactive gases (such as one or more of silicon (Si), phosphorus (P), and / or germanium (Ge)) and / or one or more carrier gases (such as one or more of nitrogen (N2) and / or hydrogen (H2)). One or more rinsing gases supplied using one or more rinsing gas sources 162 can include one or more inert gases (such as one or more of hydrogen (H2), argon (Ar), helium (He), and / or nitrogen (N2)). One or more cleaning gases supplied using one or more cleaning gas sources 153 can include one or more of hydrogen (H2) and / or chlorine (Cl). In one embodiment, which can be combined with other embodiments, one or more process gases include silicon phosphide (SiP) and / or phosphine (PH3), and one or more cleaning gases include hydrochloric acid (HCl). The present disclosure contemplates that the carrier gas, the rinsing gas, and / or the cleaning gas are all candidates for recycling as described herein.

[0036] One or more outlet channels 116 are further connected to and include the exhaust system 178. The exhaust system 178 fluidly connects the one or more outlet channels 116 to an exhaust pump 157. The exhaust system 178 can assist in the controlled deposition of a layer on the substrate 102. The exhaust system 178 is disposed on the opposite side of the processing chamber 100 relative to the inlet channels 114, 164.

[0037] As shown, system 101 includes a controller 120 that communicates with a processing chamber 100 and is configured to control the operation of processes and methods, such as the methods described herein. The controller 120 communicates with a gas recovery system 199 (such as an exhaust pump 157, a first diverter 181, a second diverter 183, a first filter device 182, a second filter device 184, and / or a third filter device 188), and a gas supply system 190. The controller 120 controls the first diverter 181 and the second diverter 183 and monitors the purity content of the filtered gas (generated using the gas recovery system 199) and / or the exhaust gas (emitted from the processing chamber 100) using sensors disposed along the exhaust pump 157, the first filter device 182, the second filter device 184, the third filter device 188, the gas supply system 190, and / or the buffer tank 186. By monitoring the purity content of the gas, the controller 120 can control the diverters 181, 183 and the gas supply system 190 and determine (and control) the location where the gas flows in the system 101.

[0038] The controller 120 includes a central processing unit (CPU), a memory containing instructions, and support circuitry for the CPU. The controller 120 controls various items either directly or through other computers and / or controllers. In one or more embodiments, the controller 120 is communicatively coupled to a dedicated controller, and the controller 120 serves as a central controller.

[0039] The controller 120 has a general-purpose computer processor of any form, which is used in an industrial environment to control various substrate processing chambers and devices, as well as sub-processors thereon or therein. The memory, or non-transitory computer-readable medium, is one or more of the readily available memories, such as random access memory (RAM), dynamic random access memory (DRAM), static RAM (SRAM), and synchronous dynamic RAM (SDRAM) (e.g., DDR1, DDR2, DDR3, DDR3L, LPDDR3, DDR4, LPDDR4, and the like), read only memory (ROM), floppy disks, hard disks, flash drives, or any other form of digital memory (local or remote). The support circuits of the controller 120 are coupled to the CPU to support the CPU (processor). The support circuits include a cache, a power supply, a clock circuit, an input / output circuit system and subsystem, and the like. The operating parameters (pressure of the recycled gas, purity of the recycled gas, chemicals constituting the recycled gas) and operations are stored in the memory as software routines, and the software routines are executed or called to turn the controller 120 into a dedicated controller to control the operations of the various systems / chambers / recycling systems / modules described herein. The controller 120 is configured to perform any of the operations described herein. When executed, the instructions stored in the memory cause one or more of the operations of method 500 (described below) to be performed.

[0040] The various operations described herein can be automatically performed using the controller 120, or can be automatically performed and / or manually performed with certain operations performed by a user.

[0041] The controller 120 is configured to adjust the output of the control of the system 101 based on sensor readings, system models, and the stored readings and calculated values. The controller 120 includes embedded software and compensation algorithms for calibrating measurements. The controller 120 may include one or more machine learning algorithms and / or artificial intelligence algorithms for estimating optimization parameters for deposition operations, rinse operations, and / or cleaning operations. The one or more machine learning algorithms and / or artificial intelligence algorithms may use, for example, regression models (such as linear regression models) or clustering techniques to evaluate the optimization parameters. The algorithms may be unsupervised or supervised.

[0042] The one or more machine learning algorithms and / or artificial intelligence algorithms may optimize the parameters used for the recycling operations. The optimization parameters may include, for example, purity content, time in the buffer tank 186, flow rates through the first filter device 182 and the second filter device 184, flow rate through the third filter device 188, and / or threshold pressure.

[0043] In one or more embodiments, the gas supply system 190 is responsible for supplying all gases to the processing chamber 100, regardless of whether the gas comes from a gas source 151, 153, 162 or the gas recovery system 199. The gas supply system 190 is controlled by the controller 120. Three internal systems of the gas supply system are visible in Figure 2 , Figure 3 and Figure 4 as described below.

[0044] Figure 2 is a schematic partial view of a purge supply system 200 of the gas supply system 190 according to one embodiment. The purge supply system 200 is part of the gas supply system 190.

[0045] The gas is shown as being supplied to and dispensed from the purge supply system 200. The purge supply system 200 supplies one or more purge gases to the processing chamber 100. The purge supply system 200 includes one or more mass flow controllers (MFCs) 207a-207e and one or more purge head lines 202 that are in fluid communication with one or more purge gas sources 162 through a first inlet line 220 and a second inlet line 210.

[0046] One or more purge gas sources 162 supply one or more purge gases as main purge gases to one or more purge head lines 202. One or more purge head lines 202 are fluidly connected to the gas recovery system 199. Filtered gas flows from the gas recovery system 199 and flows as supplementary purge gas into one or more purge head lines 202 on the upstream side of one or more MFCs 207-207e. In one or more embodiments, one or more purge gas sources 162 supply nitrogen (N2) and hydrogen (H2) as main purge gases to the first inlet line 220. In one or more embodiments, one or more purge gas sources 162 supply nitrogen (N2) as the main purge gas to the second inlet line 210, and the gas recovery system 199 supplies filtered gas (hydrogen (H2) with a purity content) as supplementary purge gas to the second inlet line 210.

[0047] The rinse supply system 200 includes a plurality of outlet pipelines 212, 214, 216, 218, 222 that are fluidly connected to respective inlet channels of the processing chamber 100. In one or more embodiments, the first outlet pipeline 222 supplies a rinse gas to the processing inlet channel 114, and the second outlet pipeline 212 supplies a rinse gas to the motion assembly 121 (such as within the bellows of the motion assembly). In one or more embodiments, the third outlet pipeline 214 supplies a rinse gas to the rinse inlet channel 164 to rinse the rinse volume 138, and the fourth outlet pipeline 216 supplies a rinse gas to the transfer opening (such as a slit valve) of the processing chamber 100. In one or more embodiments, the fifth outlet pipeline 218 supplies a rinse gas to the upper volume of the processing chamber 100 (such as for rinsing the processing volume 136 and / or the upper window 108).

[0048] The present disclosure anticipates that the first inlet pipeline 220 may be fluidly isolated from the second inlet pipeline 210. In one or more embodiments, the connection pipeline 224 may fluidly connect the first inlet pipeline 220 and the second inlet pipeline 210. The isolation device 225 (such as an isolation valve, e.g., a two-way valve) may selectively isolate and allow fluid to flow from one inlet pipeline 210, 220 to the other inlet pipeline 210, 220. The connection pipeline 224 may control the mixing of the filtered gas and the gas supplied from one or more rinse gas sources 162. For example, if the rinse gas supplied through the outlet pipelines 212, 214, 216, 218 is to be 75% filtered gas (e.g., recycled gas) and 25% of the gas supplied from one or more rinse gas sources 162, the isolation device 225 may be opened a certain amount to allow the gas from the first inlet pipeline 220 to enter the outlet pipelines 212, 214, 216, 218. The present disclosure anticipates that the connection pipeline 224 and the isolation device 225 may be omitted. In one or more embodiments, the filtered gas is supplied to the second to fifth outlet pipelines 212, 214, 216, 218 but not to the first outlet pipeline 222.

[0049] MFCs 207a - 207e, supply valves 208a - 208e, and bypass valves 209a - 209e may correspond to each outlet pipeline 212, 214, 216, 218, 222.

[0050] Figure 3 is a schematic partial view of a cleaning supply system 300 according to one embodiment. The cleaning supply system 300 is part of the gas supply system 190.

[0051] The cleaning supply system 300 supplies one or more cleaning gases to the processing chamber 100. The cleaning supply system 300 includes one or more MFCs 307a, 307b and one or more cleaning head pipelines 302 that are in fluid communication with one or more cleaning gas sources 153 through a first inlet pipeline 310 and a second inlet pipeline 320.

[0052] One or more cleaning gas sources 153 supply one or more cleaning gases as the main cleaning gas to one or more cleaning head pipelines 302. One or more cleaning head pipelines 302 are fluidly connected to the gas recovery system 199. The filtered gas flows from the gas recovery system 199 and flows into one or more cleaning head pipelines 302 as supplementary cleaning gas on the upstream side of one or more MFCs 307a, 307b. In one or more embodiments, one or more cleaning gas sources 153 supply chlorine (Cl) as the main cleaning gas to the first inlet pipeline 310, and the gas recovery system 199 supplies the filtered gas (hydrogen (H2) with a purity content) as the supplementary cleaning gas to the first inlet pipeline 310. In one or more embodiments, one or more cleaning gas sources 153 supply hydrogen (H2) and chlorine (Cl) as the main cleaning gases to the second inlet pipeline 320.

[0053] The cleaning supply system 300 includes a plurality of outlet pipelines 312, 314 that are fluidly connected to respective inlet channels of the processing chamber 100. In one or more embodiments, the first outlet pipeline 312 supplies cleaning gas at a first flow rate that is higher compared to the second flow rate of the cleaning gas supplied using the second outlet pipeline 314.

[0054] The present disclosure anticipates that the first inlet pipeline 310 can be fluidly isolated from the second inlet pipeline 320, and the first outlet pipeline 312 can be fluidly isolated from the second outlet pipeline 314. An isolation device 315 (such as an isolation valve, for example, a two-way valve) can selectively isolate and allow fluid to flow from one inlet pipeline 310, 320 to the other inlet pipeline 310, 320. A connection pipeline 324 can control the mixing of the filtered gas and the gas supplied from one or more cleaning gas sources 153. The present disclosure anticipates that the connection pipeline 324 and the isolation device 315 can be omitted. In one or more embodiments, the filtered gas is supplied to the first outlet pipeline 312 (with a higher flow rate) but not to the second outlet pipeline 320 (with a lower flow rate). In one or more embodiments, in addition to the filtered gas, the isolation device 315 can be opened to supply more hydrogen into the first outlet pipeline 312.

[0055] MFCs 307a, 307b, two supply valves 308a, 308b, 309a, 309b, and two bypass valves 310a, 310b, 311a, 311b can correspond to each of the outlet pipelines 312, 314.

[0056] Figure 4 is a schematic partial view of a process supply system 400 according to one embodiment. The process supply system 400 is part of the gas supply system 190.

[0057] The process supply system 400 supplies one or more process gases (which may include one or more precursor gases) to the process chamber 100. The process supply system 400 includes a plurality of inlet pipelines 411, 421, 431, 441 and a plurality of outlet pipelines 410, 420, 430, 440. In one or more embodiments, one or more process gas sources 151: supply chlorine (Cl) to the first inlet pipeline 411 and the first outlet pipeline 410, supply methylsilane (CH3SiH3) and argon (Ar) to the second inlet pipeline 421 and the second outlet pipeline 420, supply nitrogen (N2) to the third inlet pipeline 431 and the third outlet pipeline 430, and supply hydrogen (H2) to the fourth inlet pipeline 441 and the fourth outlet pipeline 440. In one or more embodiments, hydrogen (H2) is a carrier gas for a reactive gas (such as methylsilane (CH3SiH3)) among the process gases.

[0058] In one or more embodiments, one or more process gas sources 151 supply hydrogen (H2) as a main carrier gas to the fourth inlet pipeline 441, and the gas recovery system 199 supplies filtered gas (hydrogen (H2) with a purity content) as a supplementary carrier gas to the fourth inlet pipeline 441. In one or more embodiments, the filtered gas is supplied in the absence of the main carrier gas from one or more process gas sources 151.

[0059] The plurality of outlet pipelines 410, 420, 430, 440 are fluidly connected to the process inlet channel 114 of the process chamber 100 to supply process gases during a deposition operation. In one or more embodiments, filtered gas is supplied to the fourth outlet pipeline 440 but not to the first to third outlet pipelines 410, 420, 430.

[0060] Supply valves 408a, 408b, 408c, 408d can correspond to each of the outlet pipelines 410, 420, 430, 440. Filters 409a, 409b can correspond to each of the first outlet pipeline 410 and the second outlet pipeline 420. The present disclosure also contemplates that MFCs can correspond to each of the outlet pipelines 410, 420, 430, 440.

[0061] Figure 5 FIG. 500 is a schematic block diagram of a method 500 for recycling gases related to semiconductor manufacturing according to one embodiment.

[0062] Operation 502 includes pumping a gas out of an internal volume of a processing chamber. The gas can be a used gas used in a deposition operation of processing chamber 100. The gas can be pumped using an exhaust pump 157. The gas can be analyzed by a controller 120 to determine whether the gas should be delivered to a first filter device 182 or a third filter device 188. In one or more embodiments, if the gas is suitable for recycling, the gas is passed through a first diverter 181 to the first filter device 182. In one or more embodiments, if the gas is not suitable for recycling using the first filter device 182 and the second filter device 184, the gas is passed through the first diverter 181 to the third filter device 188.

[0063] Operation 504 includes filtering the gas using a first filtering operation (e.g., using the first filter device 182).

[0064] Operation 506 includes filtering the gas using a second filtering operation (e.g., using the second filter device 184) to produce a filtered gas having a purity content (e.g., the purity content discussed above). In one or more embodiments, the second filtering operation is substantially the same as the first filtering operation. In one or more embodiments, the second filtering operation is different from the first filtering operation. In one or more embodiments, the first filtering operation is a washing operation and the second filtering operation is an electrochemically filtering operation.

[0065] Optional operation 507 includes pressurizing the filtered gas to at least a threshold pressure before reintroducing the filtered gas into the processing chamber.

[0066] Optional operation 508 includes (at least temporarily) storing the filtered gas in a buffer tank before reintroducing the filtered gas into the processing chamber.

[0067] Operation 510 includes flowing the filtered gas (e.g., from a second diverter 183 or the buffer tank) to a gas supply system. The filtered gas is directed to one or more of a rinse supply system 200, a clean supply system 300, and / or a process supply system 400 using the controller 120.

[0068] Operation 512 includes reintroducing the filtered gas into the processing chamber using the gas supply system. The filtered gas is supplied back to the processing chamber as a recycled gas for reuse in the processing chamber. The filtered gas can be used as at least part of a rinse gas (e.g., passing through the rinse supply system 200), a clean gas (e.g., as a high flow HCL clean gas passing through the clean supply system 300), and / or a process gas (e.g., as a carrier gas for a precursor gas passing through the process supply system 400).

[0069] Benefits of the present disclosure include reusing unreacted gases from the processed chamber; reducing gas waste in semiconductor manufacturing; reducing emissions and carbon footprint; reducing gas consumption and energy consumption; and reducing operating costs (such as material costs, delivery costs, and / or power costs). As an example, gases that would otherwise be burned are filtered (e.g., cleaned) and reused in the processing chamber to reduce combustion energy consumption and save energy and money. Recycled gases (e.g., depending on purity) can be used for multiple tasks such as purging, cleaning, and / or processing (e.g., as a carrier gas). In cases where gas recycling is used with the described purity levels, unreacted gases (such as hydrogen) can be reused for purging, cleaning, and / or processing to facilitate a reduction over time in the amount of hydrogen required to operate the processing chamber. In one or more embodiments, 75% or more (such as 75 - 85% or more) of the hydrogen used in the processing chamber is recycled for reuse.

[0070] It is contemplated that one or more aspects disclosed herein can be combined. As an example, one or more aspects, features, components, operations, and / or properties of the processing chamber 100, the controller 120, the gas supply system 190, the gas recycling system 199, the diverters 181, 183, the filtration devices 182, 184, 188, the exhaust pump 157, the buffer tank 186, the purge supply system 200, the clean supply system 300, the process supply system 400, and / or the method 500 can be combined. Additionally, it is contemplated that one or more aspects disclosed herein can include some or all of the previously mentioned benefits.

[0071] Although the foregoing relates to embodiments of the present disclosure, other and further embodiments of the present disclosure can be designed without departing from its basic scope, and its scope is determined by the following claims.

Claims

1. A gas recovery system for connection to a processing chamber, the gas recovery system comprising: A pump configured to be fluidly connected to one or more outlet channels of the processing chamber to discharge gas from the processing chamber; One or more filtering devices in fluid communication with the pump such that gas flows from the pump to the one or more filtering devices, the one or more filtering devices being configured to remove one or more impurities from the gas to produce filtered gas having a purity content of 99.9% or higher; and A gas supply system in fluid communication with the one or more filtering devices such that the filtered gas flows from the one or more filtering devices to the gas supply system, the gas supply system being configured to be fluidly connected to one or more inlet channels of the processing chamber.

2. The gas recovery system of claim 1, wherein the one or more filtering devices comprise: A first filtering device; and A second filtering device in fluid communication between the first filtering device and the gas supply system such that gas flows from the first filtering device to the second filtering device.

3. The gas recovery system of claim 2, the gas recovery system further comprising: A third filtering device in fluid communication between the pump and a bypass line bypassing the one or more filtering devices; and A controller comprising instructions which, when executed, cause a plurality of operations to be performed, the plurality of operations comprising: Identifying a first portion and a second portion of the gas, Directing the first portion of the gas to the first filtering device, and Directing the second portion of the gas to the third filtering device.

4. The gas recovery system of claim 2, wherein the first filtering device is a scrubber and the second filtering device is an electrochemical filter.

5. The gas recovery system of claim 1, wherein the gas supply system comprises: A flush supply system in fluid communication with one or more flush gas sources; A process supply system in fluid communication with one or more reaction gas sources and one or more carrier gas sources; and A cleaning supply system in fluid communication with one or more cleaning gas sources.

6. The gas recovery system of claim 5, wherein the filtered gas flows into one or more of the flush supply system, the process supply system, or the cleaning supply system.

7. The gas recovery system of claim 1, the gas recovery system further comprising: A buffer storage tank in fluid communication between the one or more filtering devices and the gas supply system, A compressor in fluid communication between the one or more filtering devices and the buffer storage tank, wherein the compressor is configured to pressurize the filtered gas.

8. A system for substrate processing, the system comprising: A processing chamber, the processing chamber comprising: A chamber body that at least partially defines an internal volume, Multiple inlet channels, One or more outlet channels, A substrate support disposed within the internal volume, One or more heat sources configured to heat the internal volume; A gas supply system in fluid communication with the multiple inlet channels to supply gas to the internal volume of the processing chamber; and A gas recovery system in fluid communication between the one or more outlet channels and the gas supply system, the gas recovery system comprising: A pump in fluid communication with the one or more outlet channels to remove the gas from the internal volume of the processing chamber, and One or more filtration devices in fluid communication between the pump and the gas supply system such that the gas flows from the pump to the one or more filtration devices, the one or more filtration devices being configured to remove one or more impurities from the gas to produce a filtered gas having a purity content of 99.9% or higher, the one or more filtration devices being in fluid communication with the gas supply system such that the filtered gas flows from the one or more filtration devices to the gas supply system.

9. The gas recovery system of claim 8, wherein the one or more filtration devices comprise a first filtration device that is a scrubber, and the purity content is the concentration of hydrogen gas (H2) in atomic percentage.

10. The gas recovery system of claim 8, wherein the one or more filtration devices further comprise a second filtration device that is an electrochemical filter.

11. The system of claim 8, wherein the gas supply system comprises: A purge supply system comprising one or more first mass flow controllers (MFCs) and one or more purge head pipelines in fluid communication with one or more purge gas sources; A process supply system in fluid communication with one or more reaction gas sources and one or more carrier gas sources; and A cleaning supply system comprising one or more second mass flow controllers (MFCs) and one or more cleaning head pipelines in fluid communication with one or more cleaning gas sources.

12. The system of claim 11, wherein the filtered gas flows from the one or more filtration devices into the one or more purge head pipelines of the purge supply system on the upstream side of the one or more first MFCs.

13. The gas recovery system of claim 11, wherein the filtered gas flows from the one or more filtration devices into the one or more cleaning head pipelines of the cleaning supply system on the upstream side of the one or more second MFCs.

14. The gas recovery system of claim 11, wherein the filtered gas flows from the one or more filtration devices into the process supply system, and the filtered gas is a carrier gas.

15. A method of recovering gas for semiconductor manufacturing, the method comprising: Pumping gas out of the internal volume of a processing chamber; Filtering the gas using a first filtration operation; Filter the gas using a second filtering operation to produce a filtered gas having a purity content of 99.9% or higher; Cause the filtered gas to flow to a gas supply system; and Use the gas supply system to reintroduce the filtered gas into the processing chamber.

16. The method according to claim 15, wherein the flow of the filtered gas to the gas supply system comprises: Supplying the filtered gas as a supplementary purge gas to a purge supply system of the gas supply system in addition to a main purge gas supplied to the purge supply system.

17. The method according to claim 15, wherein the flow of the filtered gas to the gas supply system comprises: Supplying the filtered gas as a carrier gas to a processing supply system of the gas supply system while supplying a reaction gas to the processing supply system.

18. The method according to claim 15, wherein the flow of the filtered gas to the gas supply system comprises: Supplying the filtered gas as a supplementary cleaning gas to a cleaning supply system of the gas supply system in addition to a main cleaning gas supplied to the cleaning supply system.

19. The method according to claim 15, the method further comprising: storing the filtered gas in a buffer tank before reintroducing the filtered gas into the processing chamber.

20. The method according to claim 15, the method further comprising: pressurizing the filtered gas to at least a threshold pressure before reintroducing the filtered gas into the processing chamber.

Images