Proximity heater to reduce RRAM formation voltage

Abstract

A computer memory device (200) includes a bottom electrode (204), a top electrode (248), and a memory component (244) disposed between the top electrode (248) and the bottom electrode (204). The memory component (244) is made of a dielectric solid state material and is in direct contact with the top electrode and the bottom electrode. The computer storage device also includes a proximity heater (232) configured to increase a temperature of a portion of the memory component. The computer storage device also includes a layer of dielectric material in direct contact with the adjacent heater (232). The dielectric material layer is in direct contact with one of the bottom electrode (204) and the top electrode (248).

Description

BACKGROUND OF THE DISCLOSURE

[0001] The present disclosure relates to the fields of electrical, electronic, and computer. In particular, the present disclosure relates to resistive random access (RRAM) computer memories.

[0002] RRAM is a non-volatile random access (RAM) computer memory that operates by changing the resistance across a dielectric solid material. More specifically, RRAM involves creating defects in a thin oxide layer, which are referred to as oxygen vacancies (oxide bonding positions where oxygen has been removed), and which can subsequently become charged and drift under an electric field. The movement of oxygen ions and vacancies in the oxide is analogous to the movement of electrons and holes in a semiconductor. The dielectric solid material is normally insulating and can be made conductive by forming a conductive filament or conductive path through it by applying a sufficiently high voltage across it. In particular, during the application of a sufficiently high voltage, the dielectric solid material will be gradually biased until it begins to break down, creating a local conduction path. The local conduction path is also referred to as a conductive filament and provides a low-resistance path through the dielectric solid material. Once a conductive filament has been formed, it can be reset (broken, resulting in a high resistance) or set (reformed, resulting in a lower resistance) by applying another sufficiently high voltage. Due to the ability to switch the device between a high resistance and a low resistance, the dielectric solid material used in RRAM devices is often referred to as a "switching" dielectric.

[0003] A voltage that causes a conductive filament is applied between a top electrode and a bottom electrode disposed on opposite sides of the switching dielectric. Applying a voltage that causes the generation of a conductive filament between the top electrode and the bottom electrode can be referred to as "forming". Forming is generally a random process. Thus, the location where a conductive filament is formed in the switching dielectric of an RRAM device is typically random and unpredictable.

[0004] Compared to other types of RAM, RRAM offers several advantages. For example, RRAM can operate on a faster time scale than phase change memories. Compared to magnetoresistive RAM, RRAM can have a simpler, smaller cell structure. Compared to flash memories and racetrack memories, RRAM can operate using lower voltages, and thus it can be used in low-power applications. Additionally, RRAM can be scaled to smaller sizes than other types of RAM due to its dependence on the movement of oxygen atoms, which may enable scaling that is not directly associated with cell size.

[0005] However, the voltage required to form a conductive filament during the forming operation is relatively high, and there are significant challenges in adopting RRAM, and thus the ability to utilize the benefits achieved by RRAM devices. Therefore, it is desirable to reduce the forming voltage in order to improve the durability and applicability of RRAM devices.

[0006] One strategy to reduce the forming voltage is to increase the temperature of the switching dielectric during the forming process. The higher temperature can reduce the applied voltage required for forming and the time required for forming. However, there are still challenges in how to achieve a higher temperature of the switching dielectric. For example, heating the entire device heats the switching dielectric but also unnecessarily heats other components of the device, resulting in a large amount of wasted energy. Additionally, some other components of the device may be negatively affected by the temperature increase sufficient to reduce the forming voltage. Therefore, it is desirable to be able to selectively heat the switching dielectric of the memory cells of the RRAM device. Summary of the Invention

[0007] Embodiments of the present disclosure include a computer memory device. The computer memory device includes a bottom electrode, a top electrode, and a memory component made of a dielectric solid material. The memory component is disposed between the top electrode and the bottom electrode. The memory component is in direct contact with the top electrode and the bottom electrode. The device further includes a proximity heater configured to increase the temperature of a portion of the memory component. The device further includes a dielectric material layer in direct contact with the proximity heater. The dielectric material layer is in direct contact with one of the bottom electrode and the top electrode.

[0008] Including a proximity heater within the device provides a structure that enables selective heating of a portion of the dielectric solid material of the memory component. Thus, such embodiments enable selective heating of the switching dielectric of the memory cells of the RRAM device.

[0009] According to some embodiments of the present disclosure, the proximity heater may be disposed between the top electrode and the bottom electrode. Such embodiments further facilitate selective heating of the switching dielectric of the memory cells of the RRAM device because the memory component is also disposed between the top electrode and the bottom electrode and is thus in close proximity to the proximity heater.

[0010] According to some embodiments of the present disclosure, the proximity heater may be in direct contact with the memory component. Such embodiments further facilitate selective heating of the switching dielectric of the memory cells of the RRAM device by direct contact.

[0011] According to some embodiments of the present disclosure, the proximity heater may include an opening therethrough, and the bottom electrode may be at least partially disposed within the opening. Such embodiments further facilitate selective heating of the switching dielectric of the memory cells of the RRAM device by providing a structure that effectively accommodates the proximity heater within the device.

[0012] Other embodiments of the present disclosure include a heating device configured to increase the temperature of a portion of a dielectric solid-state material of at least one resistive random access memory component. The heating device includes a heater material layer and a dielectric material layer in direct contact with the heater material layer. The dielectric material layer is also in direct contact with one of a top electrode and a bottom electrode of at least one resistive random access memory component. The heating device also includes a first terminal and a second terminal configured to pass a current through the heater material layer. The first terminal and the second terminal are configured to operate independently of the terminals operating the top electrode and the bottom electrode.

[0013] Including a first terminal and a second terminal that can be operated independently of the terminals operating the top electrode and the bottom electrode enables selective heating of the dielectric solid-state material of at least one RRAM component by including a heating device within the RRAM device but separating its function from the top electrode and the bottom electrode. Thus, such embodiments enable selective heating of the switching dielectric of the memory cells of the RRAM device.

[0014] Other embodiments of the present disclosure include a method of forming a resistive random access memory component. The method includes forming a bottom electrode. The method also includes forming a neighboring heater separated from the bottom electrode such that a portion of the bottom electrode extends through a first opening in the neighboring heater and a second opening in a dielectric spacer. The method also includes forming a memory element made of a dielectric solid-state material that is in direct contact with a portion of the bottom electrode. The method also includes forming a top electrode in direct contact with the memory element.

[0015] By forming the neighboring heater such that a portion of the bottom electrode extends through the first opening in the neighboring heater, such embodiments enable selective heating of the switching dielectric of the memory cells of the RRAM device.

[0016] Other embodiments of the present disclosure include a method of forming a resistive random access memory component. The method includes forming a bottom electrode. The method also includes forming a memory element made of a dielectric solid-state material that is in direct contact with the bottom electrode. The method also includes forming a top electrode in direct contact with the memory element. The method also includes forming a neighboring heater configured to increase the temperature of at least a portion of the memory element. The neighboring heater is separated from the top electrode by a dielectric spacer.

[0017] By including the formation of a neighboring heater in forming the RRAM component, such embodiments enable selective heating of the switching dielectric of the memory cells of the RRAM device.

[0018] Other embodiments of the present disclosure include a computer memory device that includes a bottom electrode, a top electrode, and a memory component made of a dielectric solid material. The memory component is arranged to be in direct contact with the top electrode and the bottom electrode. The computer memory device further includes a proximity heater disposed between the top electrode and the bottom electrode and configured to increase the temperature of a portion of the memory component. The computer memory device further includes a dielectric material layer in direct contact with the proximity heater and in direct contact with the bottom electrode.

[0019] Since the memory component is arranged to be in direct contact with the top electrode and the bottom electrode, it is in close proximity to the proximity heater disposed between the top electrode and the bottom electrode. Thus, such embodiments enable selective heating of the switching dielectric of the memory cells of the RRAM device.

[0020] The foregoing summary is not intended to describe every illustrated embodiment or every implementation of the present disclosure. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] The drawings included in the present disclosure are incorporated into and form a part of this specification. They illustrate embodiments of the present disclosure and, together with the description, are used to explain the principles of the present disclosure. The drawings only show typical embodiments and do not limit the present disclosure.

[0022] Figure 1 A flowchart of an example method for forming a computer memory device in accordance with an embodiment of the present disclosure is shown.

[0023] Figure 2A is a schematic cross-sectional view of an example computer memory device after a portion of the example method shown in Figure 1 is executed, in accordance with an embodiment of the present disclosure.

[0024] Figure 2B is a schematic cross-sectional view of an example computer memory device after a portion of the example method shown in Figure 1 is executed, in accordance with an embodiment of the present disclosure.

[0025] Figure 2C is a schematic cross-sectional view of an example computer memory device after a portion of the example method shown in Figure 1 is executed, in accordance with an embodiment of the present disclosure.

[0026] Figure 2D is a schematic cross-sectional view of an example computer memory device after a portion of the example method shown in Figure 1 is executed, in accordance with an embodiment of the present disclosure.

[0027] Figure 2Eis a schematic cross-sectional view of an example computer memory device after performing a part of the example method shown in Figure 1

[0028] Figure 2F is a schematic cross-sectional view of an example computer memory device after performing a part of the example method shown in Figure 1

[0029] Figure 2G is a schematic cross-sectional view of an example computer memory device after performing a part of the example method shown in Figure 1

[0030] Figure 2H is a schematic cross-sectional view of an example computer memory device after performing a part of the example method shown in Figure 1

[0031] Figure 2I is a schematic cross-sectional view of an example computer memory device after performing a part of the example method shown in Figure 1

[0032] Figure 2J is a schematic cross-sectional view of an example computer memory device after performing a part of the example method shown in Figure 1

[0033] Figure 2K is a schematic cross-sectional view of an example computer memory device after performing a part of the example method shown in Figure 1

[0034] Figure 3A is a schematic perspective view of a part of an example computer memory device shown in accordance with an embodiment of the present disclosure Figure 2K

[0035] Figure 3B is a schematic top plan view of a part of an example computer memory device shown in accordance with an embodiment of the present disclosure Figure 2K

[0036] Figure 4A is a schematic top plan view of a part of an example computer memory device shown in accordance with an embodiment of the present disclosure

[0037] Figure 4B ​​​​​​​​​is a schematic diagram showing a cross-sectional view of an exemplary computer memory device in accordance with an embodiment of the present disclosure.

[0038] Figure 5A is shown in accordance with an embodiment of the present disclosure Figure 4A a schematic top plan view of a portion of the exemplary computer memory device shown in

[0039] Figure 5B is shown in accordance with an embodiment of the present disclosure Figure 5A a schematic cross-sectional view of a portion of the exemplary computer memory device shown in

[0040] Figure 6A is a schematic perspective view showing an exemplary computer memory device in accordance with an embodiment of the present disclosure.

[0041] Figure 6B is shown in accordance with an embodiment of the present disclosure Figure 6A a schematic cross-sectional view of a portion of the exemplary computer memory device shown in

[0042] Figure 7 is a schematic perspective view showing a portion of an exemplary computer memory device in accordance with an embodiment of the present disclosure.

[0043] Figure 8 is a schematic perspective view showing a portion of an exemplary computer memory device in accordance with an embodiment of the present disclosure. DETAILED DESCRIPTION

[0044] The present disclosure relates to the electrical, electronic, and computer arts. In particular, the present disclosure relates to resistive random access (RRAM) computer memories. Although the present disclosure is not necessarily limited to such applications, various aspects of the present disclosure may be understood by discussing various examples using this context.

[0045] Various embodiments of the present disclosure are described herein with reference to the related drawings. Alternative embodiments may be designed without departing from the scope of the present disclosure. It should be noted that various connections and positional relationships (e.g., above, below, adjacent, etc.) are set between elements in the following description and drawings. Unless otherwise specified, these connections and / or positional relationships may be direct or indirect, and the present disclosure is not intended to be limiting in this regard. Thus, the coupling of entities may refer to direct coupling or indirect coupling, and the positional relationship between entities may be a direct positional relationship or an indirect positional relationship. As an example of an indirect positional relationship, a reference in this description to forming layer “A” above layer “B” includes a situation where one or more intermediate layers (e.g., layer “C”) are located between layer “A” and layer “B” as long as the relevant characteristics and functions of layer “A” and layer “B” are not significantly altered by the intermediate layer.

[0046] The following definitions and abbreviations are used to interpret the claims and the specification. As used herein, the terms "comprises", "comprising", "includes", "including", "has", "having", "contains", or "containing", or any other variations thereof, are intended to cover non-exclusive inclusion. For example, a composition, mixture, process, method, article, or apparatus that comprises a list of elements is not necessarily limited to only those elements, but may include other elements not expressly listed or inherent to such composition, mixture, process, method, article, or apparatus.

[0047] For the purposes of the description hereinafter, the terms "upper", "lower", "right", "left", "vertical", "horizontal", "top", "bottom", and derivatives thereof shall relate to the described structures and methods oriented in the figures. The terms "cover", "above", "on top of", "positioned on", or "positioned on top of" mean that a first element, such as a first structure, is present on a second element, such as a second structure, where intermediate elements, such as an interfacial structure, may exist between the first element and the second element. The term "direct contact" means that a first element, such as a first structure, and a second element, such as a second structure, are joined without an intermediate conductive, insulating, or semiconductor layer at the interface of the two elements. It should be noted that the term "selective", e.g., "the first element is selective to the second element", means that the first element can be etched and the second element can be used as an etch stop.

[0048] Returning now to aspects of the present disclosure, as described above, a generally insulating dielectric solid material (also referred to as the switching dielectric of the RRAM cell) can be made conductive by a conductive filament or conductive path formed by applying a sufficiently high voltage. As further discussed above, it is desirable to be able to selectively heat the switching dielectric of the memory cells of an RRAM device. As described herein, embodiments of the present disclosure enable selective heating of the switching dielectric of the memory cells of an RRAM device.

[0049] Figure 1Depicts a flowchart of an example method 100 for forming a computer memory device in accordance with an embodiment of the present disclosure. Method 100 begins with performing operation 104, in which a bottom electrode is formed. Method 100 continues with performing operation 108, in which a heater adjacent thereto is formed. Method 100 continues with performing operation 112, in which an additional portion of the bottom electrode is formed. Method 100 continues with performing operation 116, in which a memory component is formed. Method 100 continues with performing operation 120, in which a top electrode is formed. As described in more detail below, performing each operation of method 100 may include performing a plurality of sub-operations. The execution of method 100 is described in more detail below with reference to Figures 2A - 2K The execution of method 100 is described in more detail.

[0050] As described above, performing operation 104 includes forming a bottom electrode. More specifically, the bottom electrode may be formed of a typical electrode material. Non-limiting examples of suitable electrode materials include TiN or W. The bottom electrode may be formed using known techniques outside the scope of the present disclosure and thus is not described in detail herein.

[0051] Once the bottom electrode is formed, method 100 continues with performing operation 108, in which a heater adjacent thereto is formed. According to at least one embodiment of the present disclosure, forming a heater adjacent thereto further includes forming an interlayer dielectric on top of the bottom electrode. As described in more detail below, the interlayer dielectric will insulate the heater adjacent thereto from the bottom electrode. The interlayer dielectric may be formed of a typical interlayer dielectric material. Non-limiting examples of suitable interlayer dielectric materials include SiO2 or SiCOH. The interlayer dielectric may be formed using known techniques outside the scope of the present disclosure and thus is not described in detail herein.

[0052] Figure 2A An example computer memory device 200 is shown after performing the above portion of method 100. As shown, memory device 200 includes a bottom electrode 204 and an interlayer dielectric 208 formed on top of bottom electrode 204.

[0053] According to at least one embodiment of the present disclosure, performing operation 108 of method 100 further includes etching a trench in the dielectric material and depositing a heater metal therein. As described in further detail below, the heater metal will be used to form the heater adjacent to device 200 and is thus a thermally and electrically conductive material. Thus, as described above, the interlayer dielectric thermally and electrically insulates the bottom electrode from the heater metal to prevent device short circuits. The heater metal may be a typical thermally and electrically conductive material. Non-limiting material examples suitable for the heater metal include TiN, W, or Cu.

[0054] Figure 2BAn example device 200 after performing the above portion of method 100 is shown. As shown, a portion of the interlayer dielectric 208 has been removed to form a trench, and the trench has been filled with heater metal 212.

[0055] According to at least one embodiment of the present disclosure, performing operation 108 of method 100 further includes depositing a thin interlayer dielectric layer on top of the heater metal. As described in further detail below, the thin interlayer dielectric layer will enable the formation of a collar portion adjacent to the heater.

[0056] Figure 2C An example device 200 after performing the above portion of method 100 is shown. As shown, a thin interlayer dielectric layer 216 has been deposited on top of the heater metal 212. The thin interlayer dielectric layer 216 can be made of the same material as the interlayer dielectric 208. Alternatively, the thin interlayer dielectric layer 216 can be made of a dielectric material different from the interlayer dielectric 208. In both cases, the thin interlayer dielectric layer 216 is made of a thermally insulating and electrically insulating material.

[0057] According to at least one embodiment of the present disclosure, performing operation 108 of method 100 further includes etching a via opening in the thin interlayer dielectric layer, the heater metal, and the interlayer dielectric. As described in further detail below, the via opening will enable the formation of a collar portion adjacent to the heater. More specifically, additional heater metal is conformally deposited in the via opening to make direct contact with the existing heater metal layer. Thus, the via opening is formed to expose the inner sidewall of the existing heater material layer. Additionally, to prevent a short circuit between the adjacent heater and the bottom electrode, the additional heater metal is separated from the bottom electrode by the remaining portion of the interlayer dielectric formed on top of the bottom electrode. Thus, the via opening is formed to extend through the entire thickness of the thin interlayer dielectric layer and the entire thickness of the heater metal, and is formed to extend only through a portion of the thickness of the interlayer dielectric.

[0058] Figure 2D An example device 200 after performing the above portion of method 100 is shown. As shown, the via opening 220 extends through the entire thickness of the thin interlayer dielectric layer 216 and the entire thickness of the heater metal 212, and only extends through a portion of the thickness of the interlayer dielectric 208. As shown, the inner sidewall of the existing heater metal layer 212 is exposed by the via opening 220. Due to the remaining thickness of the interlayer dielectric 208, the via opening 220 does not expose the bottom electrode 204.

[0059] According to at least one embodiment of the present disclosure, performing operation 108 of method 100 further includes conformally depositing additional heater metal on the device. The additional heater metal will cover the uppermost surface of the thin interlayer dielectric layer and the uppermost surface of the interlayer dielectric forming the bottom of the via opening. Additionally, the additional heater metal will cover the exposed vertical surfaces of the thin interlayer dielectric layer, the existing heater metal layer, and the interlayer dielectric forming the sidewalls of the via opening. Accordingly, the additional heater metal will be in direct contact with the existing heater metal layer.

[0060] Figure 2E An example device 200 is shown after performing the above portion of method 100. As shown, additional heater metal 224 has been conformally deposited on device 200 such that the additional heater metal 224 covers the uppermost surface of the thin interlayer dielectric layer 216 and the uppermost surface of the interlayer dielectric 208 forming the bottom of the via opening 220. The additional heater metal 224 also covers the exposed vertical surfaces of the thin interlayer dielectric layer 216, the existing heater metal layer 212, and the interlayer dielectric 208 forming the sidewalls of the via opening 220. Accordingly, the additional heater metal 224 is in direct contact with the existing heater metal layer 212. Further, as a result of the conformal deposition, the additional heater metal 224 is formed integrally with the existing heater metal layer 212 such that the additional heater metal 224 and the heater metal 212 form a single continuous block.

[0061] According to at least one embodiment of the present disclosure, performing operation 108 of method 100 further includes performing an etchback to remove the horizontal portions of the additional heater metal. Accordingly, the remaining blocks of the heater metal and the additional heater metal will form a straight segment portion and an annular portion that are integrally formed with each other. Further, the continuous block of the heater metal and the additional heater metal remaining after the etchback will include an opening formed through the annular portion. Accordingly, the performance of the etchback completes the formation of the heater adjacent, and thus completes the performance of operation 108.

[0062] Figure 2FFIG. 0 illustrates an example device 200 after performing the above-described portion of method 100. As shown, etch-back has been performed to remove horizontal portions of additional heater metal 224 that cover the exposed top surfaces of the thin interlayer dielectric layer 216 and the interlayer dielectric 208. As a result, the vertical segment portions of the additional heater metal 224 remain covering the exposed vertical surfaces of the thin interlayer dielectric layer 216, the heater metal 212, and the interlayer dielectric 208. Thus, the remaining additional heater metal 224 forms an annular portion 226 adjacent to the heater 232. Additionally, the remaining heater metal 212 forms a straight segment portion 228 adjacent to the heater 232. As shown, the annular portion 226 is in direct contact with and integrally formed with the straight segment portion 228. Thus, adjacent to the heater 232 is a continuous block that includes the straight segment portion 228 and the annular portion 226. Additionally, as will be described in further detail below, an opening 236 that extends through the annular portion 226 of the adjacent heater 232 will be used to accommodate additional portions of the bottom electrode therein.

[0063] Return Figure 1 , after performing operation 108, method 100 proceeds to perform operation 112, where additional portions of the bottom electrode are formed. According to at least one embodiment of the present disclosure, performing operation 112 includes forming dielectric spacers on the device.

[0064] More specifically, in such an embodiment, the dielectric spacers provide an insulating lining on the inner wall surface adjacent to the heater. Thus, the dielectric spacers will insulate the additional portions of the bottom electrode from the annular portion adjacent to the heater. Non-limiting examples of materials suitable for the dielectric spacers include SiN, AlN, or BN. In view of their function, the dielectric spacers will be made of an electrically insulating material to prevent a short circuit between the adjacent heater and the bottom electrode, and preferably thermally conductive to enable heat transfer from the adjacent heater to the memory component. Materials such as AlN and h-BN are good candidates.

[0065] Figure 2G FIG. 12 illustrates an example device 200 after performing the above-described portion of method 100. As shown, the dielectric spacers 240 have been conformally deposited on the device 200 in substantially the same manner as the above-described additional heater metal. Thus, the dielectric spacers 240 cover the exposed horizontal surfaces of the thin interlayer dielectric layer 216 and the interlayer dielectric 208. The dielectric spacers 240 further cover the exposed vertical surfaces within the opening 236. Thus, the dielectric spacers 240 cover the exposed vertical surfaces of the annular portion 226 adjacent to the heater 232.

[0066] According to at least one embodiment of the present disclosure, performing operation 112 of method 100 further includes performing etch-back of the dielectric spacer such that the dielectric spacer remains only on the vertical surfaces within the openings of the annular portion. In other words, the etch-back is performed to remove the dielectric spacer from all horizontal surfaces of the device.

[0067] Figure 2H An example device 200 after performing the above portion of method 100 is shown. As shown, the dielectric spacer 240 has been etch-back such that it remains only on the vertical surfaces of the annular portion 226 adjacent to the heater 232. Notably, by the etch-back of the dielectric spacer 240, the horizontal top surface of the annular portion 226 that is substantially coplanar with the top surface of the interlayer dielectric layer 216 is exposed.

[0068] According to at least one embodiment of the present disclosure, performing operation 112 of method 100 further includes selectively etching the interlayer dielectric through the openings in the adjacent heaters to expose a portion of the top surface of the bottom electrode therebelow.

[0069] Figure 2I An example device 200 after performing the above portion of method 100 is shown. As shown, the interlayer dielectric 208 has been selectively etched through the opening 236 to expose a portion of the top surface of the bottom electrode 204 at the bottom of the device 200. In other words, etching the interlayer dielectric 208 causes the opening 236 to extend downward to the top surface of the bottom electrode 204.

[0070] According to at least one embodiment of the present disclosure, performing operation 112 of method 100 further includes filling the opening with additional electrode material such that the additional electrode material is in direct contact with the exposed portion of the bottom electrode. The additional electrode material may be the same as the material used to form the bottom electrode. Thus, the additional electrode material forms an additional portion of the bottom electrode that is integrally formed with the bottom electrode. Thus, after performing this portion of operation 112, the additional portion of the bottom electrode and the bottom electrode together form a continuous block as the bottom electrode.

[0071] According to at least some embodiments of the present disclosure, performing operation 112 further includes polishing the top surface of the additional portion of the bottom electrode such that the top surface of the additional portion of the bottom electrode is substantially coplanar with the top surface of the interlayer dielectric layer, the annular portion adjacent to the heater, and the dielectric spacer. For example, the polishing can be achieved by performing a chemical mechanical polishing (CMP) process.

[0072] Figure 2J An example device 200 after performing the above portion of method 100 is shown. As shown, the opening 236 ( Figure 2IAs shown in [reference], the opening has been filled with additional electrode material such that the additional electrode material is in direct contact with and integrally formed with the bottom electrode 204. As a result, the completed bottom electrode 204 (including the additional electrode material) is a continuous block that extends from the lowest surface of the device 200 through all existing layers of the device 200 and is substantially coplanar with the top surface of the interlayer dielectric layer 216, the annular portion 226 adjacent to the heater 232, and the dielectric spacer 240.

[0073] In other words, according to an embodiment of the device 200, the opening 236 ( Figure 2I as shown in [reference]) extends through and is adjacent to the heater 232, and the bottom electrode 204 is at least partially disposed within the opening 236. More specifically, an additional portion of the bottom electrode 204 is disposed within the opening 236 such that the bottom electrode 204 is separated from the heater 232 by the dielectric spacer 240.

[0074] Return Figure 1 , after performing operation 112, method 100 continues with operation 116, where a memory component of the device is formed. According to at least one embodiment of the present disclosure, performing operation 116 includes forming a switching dielectric material layer on the top surface of the device. As described above, the switching dielectric material is a dielectric solid material that is normally insulating and can be made conductive by applying a sufficiently high voltage thereto to form a conductive filament or conductive path through the dielectric solid material. The memory component includes the switching dielectric material layer. In other words, the memory component is made of a dielectric solid material. According to at least one embodiment of the present disclosure, the memory component does not include any other elements. In such an embodiment, the memory component is a layer of dielectric solid material.

[0075] The memory component is in direct contact with the top surfaces of the bottom electrode, the interlayer dielectric layer, the annular portion adjacent to the heater, and the dielectric spacer. The switching dielectric material that constitutes the memory component can be a material that is commonly used as a switching material in RRAM cells. Non-limiting examples of materials suitable for the memory component include HfO x or TaO x .

[0076] After performing operation 116, method 100 continues with operation 120, where a top electrode is formed. The top electrode is formed to be in direct contact with the top surface of the memory component. The top electrode can be made of a known electrode material. The top electrode can be made of the same material as the bottom electrode. Alternatively, the top electrode can be made of a different material than the bottom electrode.

[0077] Figure 2KAn example device 200 after performing the above portions of method 100 is shown. As shown, a memory component 244 made of a dielectric solid material has been formed to be in direct contact with the top surface of the bottom electrode 204, the thin interlayer dielectric layer 216, the annular portion 226 adjacent to the heater 232, and the dielectric spacer 240. Thus, the memory component 244 is separated from the straight portion 228 of the heater 232 adjacent thereto by the thin interlayer dielectric layer 216.

[0078] As Figure 2K Further shown, a top electrode 248 has been formed to be in direct contact with the top surface of the memory component 244. Thus, the top electrode 248 is separated from the bottom electrode 204, the thin interlayer dielectric layer 216, the heater 232 adjacent thereto, and the dielectric spacer 240 by the memory component 244.

[0079] Figure 2K An example device 200 after completing the execution of method 100 is shown. Figure 3A And Figure 3B respectively show Figure 2K a perspective view and a top plan view of a portion of the device 200 shown in Figure 3A . It should be noted that, for ease of clearly seeing the heater 232 adjacent thereto, Figure 2K the views shown in Figure 3A do not include the thin interlayer dielectric layer 216, the interlayer dielectric 208, or the dielectric spacer 240 ( Figure 3B shown in Figure 2I ). Additionally, for further ease of clearly seeing the heater 232 adjacent thereto, the memory component 244 is shown as transparent in the views shown in Figure 3A . In Figure 3B , for ease of clearly seeing the heater 232 adjacent thereto, only the heater 232 adjacent thereto, the dielectric spacer 240, and an additional portion of the bottom electrode 204 extending through the opening 236 ( Figure 2I shown in

[0080] As shown, the example device 200 includes a bottom electrode 204, a top electrode 248, a memory component 244, a heater 232 adjacent thereto, and a dielectric spacer 240. The memory component 244 is disposed between the top electrode 248 and the bottom electrode 204 and is in direct contact with the top electrode 248 and the bottom electrode 204. Thus, a conductive filament F can be formed in the memory component 244 by applying a current between the bottom electrode 204 and the top electrode 248 through the dielectric solid material constituting the memory component 244 ( Figure 2Kas shown). As described above, applying a current between the bottom electrode 204 and the top electrode 248 to form the conductive filament F is referred to as "forming" the conductive filament F. The adjacent heater 232 is configured to increase the temperature of a portion of the memory component 244. In particular, the adjacent heater 232 is configured to increase the temperature of at least the portion of the dielectric solid material of the memory component 244 where the conductive filament F is formed.

[0081] Accordingly, the adjacent heater 232 enables selective heating of the dielectric solid material of the memory component 244. As described above, such selective heating enables reducing the applied voltage required to form the conductive filaments in the dielectric solid material of the memory component 244 and reducing the time required to form the conductive filaments. In addition, such selective heating enables achieving these advantages in the RRAM device without unnecessarily heating other elements of the device.

[0082] As Figure 3A and Figure 3B shown, the adjacent heater 232 is configured to operate separately from the top electrode 248 and the bottom electrode 204. More specifically, the adjacent heater 232 is electrically connected between the terminals T1 and T2 such that a current C is conducted through the adjacent heater 232 between the terminals T1 and T2. The top electrode 248 and the bottom electrode 204 are electrically connected to the terminals T3 and T4 such that a current is conducted through the bottom electrode, the memory component 244, and the top electrode 248 between the terminals T3 and T4. Accordingly, the adjacent heater 232 can be operated only during the forming process to increase the temperature of the memory component 244. At all other times, read and write currents can flow through the memory component 244 between the terminals T3 and T4 without operating the adjacent heater 232. Thus, embodiments of the present disclosure enable time and space selective heating of the memory component 244 only during the forming process.

[0083] It should be noted that the embodiments of the device 200 shown herein depict an additional portion of the bottom electrode as being substantially cylindrical and the opening in the adjacent heater as also being substantially cylindrical such that the opening is substantially concentric with the additional portion of the bottom electrode and such that the dielectric spacer is substantially annular to fill the space between the adjacent heater and the additional portion of the bottom electrode. However, it should be noted that in alternative embodiments, the additional portion of the bottom electrode, the opening, and the dielectric spacer can have different shapes. In addition, in alternative embodiments, the bottom electrode and the opening can have different shapes from each other.

[0084] As Figure 2K and Figure 3BAs shown, the dielectric spacer 240 of device 200 is in direct contact with the adjacent heater 232 and in direct contact with the bottom electrode 204. As described above, the dielectric spacer 240 electrically isolates the adjacent heater 232 from the bottom electrode 204, thus preventing a short circuit therebetween.

[0085] In addition, as Figure 3A shown, according to an embodiment of device 200, the adjacent heater 232 includes a straight section 228 and an annular section 226 integrally formed with the straight section 228. An opening 236 extends through the annular section 226 of the adjacent heater 232. However, alternative embodiments of the present disclosure may differ from device 200 by omitting the annular section.

[0086] For example, Figure 4A and Figure 4B show an embodiment of device 300 that is substantially similar in structure and function to device 200, except that, as shown, the adjacent heater 332 lacks the annular section. In other words, the adjacent heater 332 only includes the straight section 328. Thus, as Figure 4A shown, the opening 336 extends through the straight section 328. Similar to device 200, device 300 includes a dielectric spacer 340 that separates the adjacent heater 332 from the bottom electrode 304. As Figure 4B shown, due to the lack of the annular section, the dielectric spacer 340 is in direct contact with the interlayer dielectric layer 316 above the adjacent heater 332 and the interlayer dielectric 308 below the adjacent heater 332.

[0087] Similar to device 200, device 300 can also be formed by performing the Figure 1 method 100 shown. However, since the adjacent heater of device 300 does not include the annular section, forming device 300 does not include those sub-operations of method 100 that result in the formation of the annular section. In other words, to form device 300, performing operation 108 (where the adjacent heater is formed) does not include conformally depositing additional heater metal on the device or thus etching back its horizontal portions.

[0088] It is worth noting that, as Figure 4B shown, device 300 includes an interlayer dielectric layer 316. However, as will be described in more detail below, alternative embodiments of the present disclosure may differ from device 300 by omitting the interlayer dielectric layer 316.

[0089] For example, Figure 5A and Figure 5BAn embodiment of device 400 that is substantially similar in structure and function to device 300 is shown, except that, as shown, device 400 lacks the thin interlayer dielectric layer between the heater 432 and the memory component 444. Since it only shows adjacent the heater 432, the dielectric spacer 440, and the bottom electrode 404, so Figure 5A the view of device 400 shown in Figure 4A looks the same as the view of device 300 shown in Figure 5B However, as shown in Figure 5A , except within the opening 436 (as shown in Figure 5A ), the memory component 444 is in direct contact with the heater 432 along the entire portion adjacent to the heater 432.

[0090] In such an embodiment, when current flows through the heater 432, a possible method to prevent the formation of a conductive filament in the memory component between the heater 432 and the top electrode 448 is to ensure that the heater 432 is programmed with a voltage close to the voltage of the top electrode 448, such that little field is generated between the heater 432 and the top electrode 448. Additionally, in such an embodiment, the material used to form the dielectric spacer 440 must have a very high breakdown field to prevent breakdown of the dielectric spacer 440 material. Alternatively, a thin electrical insulator can be formed between the heater 432 and the memory component 444. For example, the thin interlayer dielectric layer included in other embodiments performs this function.

[0091] Similar to device 300, device 400 can also be formed by performing the method 100 shown in Figure 1 . However, since the heater adjacent to device 400 does not include a thin interlayer dielectric layer, forming device 400 does not include those sub-operations of method 100 that result in the formation of the thin interlayer dielectric layer. In other words, to form device 400, performing operation 108 (where the heater adjacent is formed) does not include depositing a thin interlayer dielectric layer on top of the heater metal.

[0092] Returning to Figure 2K and Figure 3A, according to an embodiment of device 200, it is disposed between the top electrode 248 and the bottom electrode 204 adjacent to the heater 232. Thus, the heater 232 is disposed adjacent to and in close proximity to the memory component 244 to facilitate efficient selective heating of the switching dielectric of the memory component 244. More specifically, according to an embodiment of device 200, the heater 232 is in direct contact with the memory component 244. However, alternative embodiments of the present disclosure may differ from device 200 by forming the device such that the adjacent heater is disposed above the top electrode. In other words, in alternative embodiments of the present disclosure, the top electrode may be disposed between the adjacent heater and the memory component. In such an embodiment, the top electrode is also disposed between the adjacent heater and the bottom electrode.

[0093] For example, Figure 6A and Figure 6B An embodiment of device 500 is shown that is substantially similar in structure and function to device 200, except that, as shown, the adjacent heater 532 is separated from the memory component 544 by the top electrode 548. Thus, in such an embodiment, the dielectric spacer 540 is formed to be in direct contact with the top electrode 548 rather than the bottom electrode 504 to prevent short - circuiting with the top electrode 548. Since the adjacent heater 532 is not formed to avoid contact with the bottom electrode 504 between the bottom electrode 504 and the memory component 544, such an embodiment of the adjacent heater 532 does not need to include an annular portion or an opening.

[0094] According to some such embodiments of the present disclosure, such as the embodiment shown by Figure 6A , a channel is formed in the top electrode 548, the channel is lined with the dielectric spacer 540, and the adjacent heater 532 is formed within the dielectric spacer 540 such that short - circuiting between the top electrode 548 and the adjacent heater 532 is prevented. As Figure 6A shown, according to such an embodiment of device 500, the uppermost surface of the adjacent heater 532 is substantially coplanar with the uppermost surface of the top electrode 548.

[0095] However, in an alternative embodiment, the adjacent heater 532 may be formed above the uppermost surface of the top electrode 548 rather than being embedded in a channel within the uppermost surface of the top electrode 548. In such an embodiment, the uppermost surface of the adjacent heater 532 will not be substantially coplanar with the uppermost surface of the electrode 548.

[0096] According to some embodiments of the present disclosure, the device may also include a plurality of adjacent heaters that are configured and arranged to increase the temperature of the same portion of the dielectric solid - state material of the memory component. For example, Figure 7Device 600 is shown, which includes a first adjacent heater 632a (such as adjacent heater 232 of device 200) disposed between a top electrode 648 and a bottom electrode 604, and a second adjacent heater 632b (such as adjacent heater 532 of device 500) disposed above the top electrode 648. In other words, the top electrode 648 is disposed between the first adjacent heater 632a and the second adjacent heater 632b.

[0097] According to some embodiments of the present disclosure, a device may include a plurality of adjacent heaters configured to increase the temperature of different portions of a memory component or different portions of different memory components. According to some embodiments, the plurality of adjacent heaters may be arranged in series with each other. Thus, according to some embodiments, the plurality of adjacent heaters may operate substantially simultaneously. For example, Figure 8 Device 700 is shown, which includes a first adjacent heater 732a and a second adjacent heater 732b. Figure 8 Each adjacent heater 732 shown therein is substantially similar to adjacent heater 232 of device 200. However, in alternative embodiments, each adjacent heater may be substantially similar to any of the devices disclosed herein.

[0098] In addition to the above embodiments, other embodiments with fewer, more, or different operating steps are contemplated. Additionally, some embodiments may perform some or all of the above operating steps in a different order. Further, multiple operations may occur simultaneously or as an internal part of a larger process.

[0099] In the foregoing, reference has been made to various embodiments. However, it should be understood that the present disclosure is not limited to the specifically described embodiments. Instead, any combination of the described features and elements (whether or not related to different embodiments) is contemplated for implementing and practicing the present disclosure. Many modifications and variations will be apparent to those of ordinary skill in the art without departing from the scope and spirit of the described embodiments. Moreover, although embodiments of the present disclosure may achieve advantages relative to other possible solutions or relative to the prior art, whether a given embodiment achieves a particular advantage does not limit the present disclosure. Thus, the described aspects, features, embodiments, and advantages are merely illustrative and are not to be considered elements or limitations of the appended claims unless expressly recited therein.

[0100] The terms used herein are for the purpose of describing particular embodiments and are not intended to limit the various embodiments. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will also be further understood that when used in this specification, the terms "comprises" and / or "comprising" specify the presence of the stated features, integers, steps, operations, elements and / or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components and / or groups thereof. In the detailed description of the exemplary embodiments of the various embodiments above, reference is made to the accompanying drawings (where like numerals represent like elements), which form a part thereof, and in which are shown by way of example specific exemplary embodiments in which the various embodiments may be practiced. These embodiments are described in sufficient detail to enable those skilled in the art to practice the embodiments, but other embodiments may be used and logical, mechanical, electrical and other changes may be made without departing from the scope of the various embodiments. In the foregoing description, numerous specific details are set forth to provide a thorough understanding of the various embodiments. However, the various embodiments may be practiced without these specific details. In other instances, well-known circuits, structures and techniques have not been shown in detail so as not to obscure the embodiments.

[0101] As used herein, "a number of" when used in connection with an item means one or more items. For example, "a number of different types of networks" is one or more different types of networks.

[0102] When different reference numerals include a common numeral followed by different letters (e.g., 100a, 100b, 100c) or punctuation followed by different numerals (e.g., 100-1, 100-2 or 100.1, 100.2), the use of only the reference numeral without the letter or following numeral (e.g., 100) may refer to the group of elements as a whole, any subset of the group, or an example sample of the group.

[0103] In addition, the phrase "at least one", when used in connection with a list of items, means that different combinations of one or more of the listed items may be used and it may be necessary to use only one of each item in the list. In other words, "at least one" means that any combination and number of items from the list may be used, but not all items in the list are required. The items may be specific objects, things or categories.

[0104] For example, without limitation, "at least one of Project A, Project B, or Project C" may include Project A, Project A and Project B, or Project B. This example may also include Project A, Project B, Project C, or Project B and Project C. Of course, any combination of these projects may exist. In some illustrative examples, "at least one" may be, without limitation, two Project As; one Project B; ten Project Cs; four Project Bs and seven Project Cs; or other suitable combinations.

[0105] Different instances of "embodiments" used herein do not necessarily refer to the same embodiment, but they may. Any data and data structures shown or described herein are merely examples, and in other embodiments, different amounts of data, data types, fields, the number and type of fields, field names, the number and type of rows, records, entries, or the organization of data may be used. Additionally, any data may be combined with logic such that a separate data structure may not be necessary. Accordingly, the foregoing detailed description should not be considered restrictive.

[0106] The description of the various embodiments of the present disclosure has been presented for purposes of illustration, but is not intended to be exhaustive or to limit the embodiments to the disclosed embodiments. Many modifications and variations will be apparent to a person of ordinary skill in the art without departing from the scope and spirit of the described embodiments. The terms used herein have been chosen to best explain the principles of the embodiments, the practical application, or a technical improvement over the technology found in the marketplace, or to enable other persons of ordinary skill in the art to understand the embodiments disclosed herein.

[0107] Although the invention has been described with reference to specific embodiments, it is anticipated that modifications and variations thereof will become apparent to those skilled in the art. Accordingly, it is intended that the following claims be construed to cover all such modifications and variations that fall within the true spirit and scope of the invention.

Claims

1. A computer memory device, comprising: A bottom electrode; A top electrode; A memory component made of a dielectric solid material, the memory component being disposed between the top electrode and the bottom electrode and in direct contact with the top electrode and the bottom electrode; A proximity heater configured to increase the temperature of a portion of the memory component; and A dielectric material layer in direct contact with the proximity heater, wherein: The dielectric material layer is in direct contact with one of the bottom electrode and the top electrode.

2. The computer memory device according to claim 1, wherein: The proximity heater is disposed between the top electrode and the bottom electrode.

3. The computer memory device according to claim 2, wherein: The proximity heater is in direct contact with the memory component.

4. The computer memory device according to claim 2, wherein: The proximity heater includes an opening therethrough; and The bottom electrode is at least partially disposed within the opening.

5. The computer memory device according to claim 4, wherein: The proximity heater includes a straight section and an annular section integrally formed with the straight section; and The opening extends through the annular section.

6. The computer memory device according to any one of the preceding claims, further comprising: An additional proximity heater configured to increase the temperature of the portion of the memory component; And An additional dielectric material layer in direct contact with the additional proximity heater, wherein: The additional dielectric material layer is in direct contact with the other of the bottom electrode and the top electrode.

7. The computer memory device according to claim 6, wherein: The proximity heater is disposed between the top electrode and the bottom electrode; and The top electrode is disposed between the proximity heater and the additional proximity heater.

8. The computer memory device according to any one of the preceding claims, wherein: The top electrode is disposed between the proximity heater and the bottom electrode.

9. The computer memory device according to claim 8, wherein: The top electrode includes a channel formed therein; and The proximity heater is at least partially disposed within the channel.

10. The computer memory device according to claim 9, wherein: The dielectric material layer is disposed within the channel such that the dielectric material layer separates the proximity heater from the top electrode.

11. The computer memory device according to claim 10, wherein: The uppermost surface of the proximity heater is substantially coplanar with the uppermost surface of the top electrode.

12. The computer memory device according to any one of the preceding claims, further comprising: An additional memory component, wherein: The proximity heater is configured to increase the temperature of a portion of the additional memory component.

13. A heating device configured to increase the temperature of a portion of a dielectric solid material of at least one resistive random access memory component, the heating device comprising: Heater material layer; A dielectric material layer that is in direct contact with the heater material layer, and the dielectric material layer is in direct contact with one of the top electrode and the bottom electrode of the at least one resistive random access memory component; And A first terminal and a second terminal configured to pass current through the heater material layer, wherein the first terminal and the second terminal are configured to be operated independently of the terminals operating the top and bottom electrodes.

14. The heating device according to claim 13, wherein: The heater material layer includes an opening therethrough, and The opening is configured to accommodate a portion of the bottom electrode therein such that the heater material layer is not in direct contact with the portion of the bottom electrode.

15. The heating device according to claim 14, wherein: The heater material layer includes a straight section portion and an annular portion integrally formed with the straight section portion, and The opening is formed through the annular portion.

16. The heating device according to any one of the preceding claims 13 to 15, wherein: The heater material layer includes a top surface that is substantially coplanar with the topmost surface of the top electrode.

17. The heating device according to any one of the preceding claims 13 to 16, wherein: The dielectric material layer is in direct contact with one of an additional top electrode and an additional bottom electrode of at least one additional resistive random access memory component.

18. The heating device according to claim 17, wherein: The heater material layer includes an opening therethrough and an additional opening therethrough, The opening is configured to accommodate a portion of the bottom electrode therein such that the heater material layer is not in direct contact with the portion of the bottom electrode, and The additional opening is configured to accommodate a portion of the additional bottom electrode therein such that the heater material layer is not in direct contact with the portion of the additional bottom electrode.

19. A method of forming a resistive random access memory component, the method comprising: Forming a bottom electrode; Forming a neighboring heater separated from the bottom electrode by a dielectric spacer such that a portion of the bottom electrode extends through a first opening in the neighboring heater and a second opening in the dielectric spacer; Forming a memory element made of a dielectric solid material that is in direct contact with the portion of the bottom electrode; And Forming a top electrode that is in direct contact with the memory element.

20. The method according to claim 19, wherein: Forming the neighboring heater includes: Forming a heater material layer separated from another portion of the bottom electrode by an interlayer dielectric; and Forming the first opening through the heater material layer and the interlayer dielectric to expose the topmost surface of the another portion of the bottom electrode; and The portion of the bottom electrode is formed to be in direct contact with the topmost surface of the another portion of the bottom electrode.

21. The method according to claim 20, wherein: Forming the adjacent heater further includes forming an annular member of heater material that is in direct contact with the heater material layer such that the annular member is disposed along the first opening.

22. A method of forming a resistive random access memory device, the method comprising: Forming a bottom electrode; Forming a memory element made of a dielectric solid material that is in direct contact with the bottom electrode; Forming a top electrode that is in direct contact with the memory element; And Forming an adjacent heater configured to increase the temperature of at least a portion of the memory element, the adjacent heater being separated from the top electrode by a dielectric spacer.

23. The method according to claim 22, wherein: Forming the top electrode includes forming a channel in the uppermost surface of the top electrode; and Forming the adjacent heater includes forming the adjacent heater within the channel.

24. The method according to claim 23, wherein: Forming the adjacent heater further includes forming the adjacent heater such that the uppermost surface of the adjacent heater is substantially coplanar with the uppermost surface of the top electrode.

25. A computer memory device, comprising: A bottom electrode; A top electrode; A memory component made of a dielectric solid material disposed to be in direct contact with the top electrode and the bottom electrode; An adjacent heater disposed between the top electrode and the bottom electrode and configured to increase the temperature of a portion of the memory component; and A dielectric material layer in direct contact with the adjacent heater and in direct contact with the bottom electrode.

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