Optical film and composite sputtering forming method thereof

Abstract

The invention relates to the technical field of film sputtering, in particular to an optical film and a composite sputtering forming method thereof.The method comprises the steps that a high-energy ion beam is generated based on a radio frequency plasma source to irradiate an optical substrate, multiple asymmetrically-arranged target materials are sputtered to the surface of an initial substrate, and a primary film layer is obtained; the surface of the primary film layer is divided into a plurality of areas based on the surface characteristics of the primary film layer, nitrogen is introduced to carry out local nitridation on each area, magnetron sputtering and pulse laser sputtering are alternately adopted to carry out sputtering on the optical film layer, and a composite film layer is obtained; placing the composite film layer in a reaction kettle, and respectively introducing oxygen and argon for reaction to obtain an array film layer; and immersing the array film layer into an isopropanol mixed solution containing nanometer aluminum oxide particles, and carrying out electrolytic deposition to obtain the optical film. According to the optical film, the functionalization and diversity of the film layer can be realized while the stability of the film layer structure and performance is ensured, and the overall performance of the optical film is enhanced.

Description

Technical Field

[0001] The present invention relates to the technical field of diaphragm sputtering, and more specifically, to an optical diaphragm and a composite sputtering forming method thereof. Background Art

[0002] In the modern optical field, optical diaphragms are applied to various optical systems, such as optical displays, laser technology, optical sensors, displays, and lighting devices. Optical diaphragms are composed of multiple thin film materials, and different thin film materials with different properties are laminated on the surface of the substrate through multiple sputtering, deposition and other technologies to meet specific requirements such as optical transmission, reflection, and absorption. With the progress of technology, higher performance is required for optical diaphragms, such as more precise optical properties, more excellent mechanical properties, stronger corrosion resistance and wear resistance. Therefore, higher requirements are also put forward for the preparation methods of optical diaphragms.

[0003] Currently, common preparation methods for optical diaphragms include evaporation deposition, magnetron sputtering, and pulsed laser sputtering. Although these methods can meet the preparation requirements of optical diaphragms to a certain extent, there are still certain limitations. The existing magnetron sputtering technology is generally applicable to the deposition of uniform thin films and has certain advantages in controlling the thickness, uniformity, and optical properties of thin films. However, the film layer quality and uniformity during the deposition process are often affected by the target material, process parameters, and equipment performance, resulting in some defects on the film layer surface, such as large roughness, and even uneven optical properties in local areas. It is often difficult to precisely control the transition layer between different thin films, local surface features, and diverse combinations of film layers. Especially when the film layer is required to have a special structure (such as a nanoparticle array or a composite film layer with specific optical properties), the existing technical methods often struggle to balance the multi-layer structure, stability, and optical properties of the film layer. How to ensure the functionality and diversity of the film layer while guaranteeing the film layer quality remains one of the difficulties in current optical diaphragm technology.

[0004] Therefore, in view of the limitations in the prior art, it is particularly important to develop a method that can precisely control the optical film layer structure, improve the film layer uniformity, and optical properties. Summary of the Invention

[0005] The main objective of the present invention is to provide a composite sputtering forming method for an optical diaphragm, aiming to overcome the technical problem that the existing preparation methods for optical diaphragms cannot precisely control the uniformity of the film layer structure and optical properties.

[0006] To solve the above-mentioned problems of the invention, the present invention proposes a composite sputtering forming method for an optical diaphragm, and the method includes: Irradiate an optical substrate with a high-energy ion beam generated by a radio frequency plasma source, and periodically adjust the ion beam angle based on the shape of the optical substrate to obtain an initial substrate, where the ion beam angle ranges from 15° to 75°; Sputter a variety of asymmetrically arranged target materials on the surface of the initial substrate to obtain a primary film layer, where the angular deviation of the asymmetric arrangement is 10° to 30°; Divide the surface of the primary film layer into multiple regions based on the surface characteristics of the primary film layer, and introduce nitrogen gas to perform local nitridation on each region to obtain an optical film layer, where the nitrogen gas flow rate for each region corresponds to the surface characteristics; Place the optical film layer in a sputtering system, and alternately sputter the optical film layer using magnetron sputtering and pulsed laser sputtering to obtain a composite film layer; Place the composite film layer in a reaction kettle, introduce oxygen gas to react for a preset time at a low temperature state, and then introduce argon gas to react at a high temperature state to obtain an array film layer; Immerse the array film layer in an isopropanol mixed solution containing nano-aluminum oxide particles, and introduce direct current into the mixed solution for electrolytic deposition to obtain an optical film.

[0007] Further, the asymmetrically arranged target materials include any combination of three or more of titanium, silicon, chromium, aluminum, and zirconium.

[0008] Further, the step of irradiating an optical substrate with a high-energy ion beam generated by a radio frequency plasma source, and periodically adjusting the ion beam angle based on the shape of the optical substrate to obtain an initial substrate, where the ion beam angle ranges from 15° to 75°, includes: Place the optical substrate in a plasma processing chamber, adjust the radio frequency power of the plasma processing chamber to 100 - 150 W to generate a high-energy ion beam, the ion beam energy ranges from 100 - 150 eV, and the multi-stage bias voltage varies dynamically between 10 - 50 V, and the processing time is 5 - 10 minutes to obtain an excited substrate; Obtain the surface curvature data of the excited substrate based on an optical profiler, and segmentally adjust the ion beam irradiation angle within the range of 15° to 75° according to the surface curvature data, with each adjustment period being 10 - 20 seconds, to obtain the initial substrate.

[0009] Further, the step of sputtering a variety of asymmetrically arranged target materials on the surface of the initial substrate to obtain a primary film layer, where the angular deviation of the asymmetric arrangement is 10° to 30°, includes: Place the initial substrate in a multi-target sputtering chamber, and adjust the deviation between the three-dimensional tilt angle of the substrate fixture and the central axis of the target material to be 10° to 30° to obtain a pre-positioned substrate; Fix various asymmetrically arranged target materials in the sputtering chamber respectively, with the included angle between the target materials offset by 10 - 30° in sequence, and dynamically vary the RF power of each target material independently within the range of 50 - 150 W; Control the start of the sputtering chamber, set the pulse frequency to 100 - 500 Hz, alternately turn on the sputtering duration of different target materials for 5 - 15 minutes per round, and deposit for 3 - 6 rounds to obtain a composite primary film layer with a multi-layer structure.

[0010] Further, divide the surface of the primary film layer into multiple regions based on the surface characteristics of the primary film layer, and introduce nitrogen to perform local nitridation on each region to obtain an optical film layer. Among them, the steps of the nitrogen flow rate for each region corresponding to the surface characteristics include: Obtain the surface characteristic data of the primary film layer based on the three-dimensional topography acquired by the scanning device. The surface characteristic data includes surface height fluctuations and roughness parameter differences; Input the surface characteristic data into a computer, and divide the surface of the primary film layer into multiple regions based on the surface height fluctuations and roughness parameter differences. The boundary of each region is marked by a contour line with a height difference greater than 3 nm or a roughness change rate exceeding 20%; Control the number of partitions within 5 - 15, with the area range of each region being 0.1 - 1 mm². After division, mark the surface of the primary film layer to obtain a partitioned film layer; Place the partitioned film layer in a reaction kettle, adjust the position of the multi-channel nozzle of the nitrogen introduction device so that each nozzle corresponds to a partition region; Start the nitrogen introduction device, perform local nitrogen spraying treatment on the surface of the partitioned film layer to obtain an optical film layer, where the nitrogen flow rate value is proportional to the average height fluctuation and average roughness of the corresponding region.

[0011] Further, the steps of placing the optical film layer in a sputtering system and alternately sputtering the optical film layer by magnetron sputtering and pulsed laser sputtering to obtain a composite film layer include: Place the optical film layer in a vacuum chamber, hold it at 200 - 350 °C for 10 - 15 minutes, and cool it down to room temperature by gradient to obtain an initial optical film layer; Configure the magnetron sputtering target material as a multi-component oxide combination, and the pulsed laser sputtering target material as metal particles to form a sputtering system; Place the initial optical film layer in the sputtering system, and operate magnetron sputtering and pulsed laser sputtering in an alternating cycle of 0.1 - 0.5 seconds in the sputtering system. Among them, magnetron sputtering uses a bias voltage of 50 - 80 V, and pulsed laser sputtering uses a laser beam with an energy density of 2 - 5 J / cm², and continuously deposit for 40 - 50 minutes to obtain a composite film layer embedded with a nano-particle array.

[0012] Further, the multi-metal oxide combination is one or more combinations of aluminum oxide, zirconium oxide, titanium oxide, and silicon oxide, and the metal particles are one or more of gold, silver, copper, and nickel.

[0013] Further, the step of placing the composite film layer in a reaction kettle, introducing oxygen at a low temperature state to react for a preset time, and then introducing argon at a high temperature state to react to obtain the array film layer includes: Placing the composite film layer in a reaction kettle, introducing oxygen in a low temperature environment of 80-150 °C for surface oxidation reaction to obtain a surface-oxidized composite film layer; Gradually heating the surface-oxidized composite film layer in the reaction kettle to 250-350 °C, and introducing a mixed gas of argon and oxygen for atmosphere regulation to obtain a transition-state film layer; Placing the transition-state film layer in a high temperature environment of 400-600 °C and introducing argon for lattice rearrangement and surface flattening to obtain a reconstructed film layer; Placing the reconstructed film layer in a sealed cavity containing silane gas for surface silanization penetration to obtain the array film layer.

[0014] Further, the step of immersing the array film layer in an isopropanol mixed solution containing nano-aluminum oxide particles and applying direct current electrolytic deposition to the mixed solution to obtain an optical film sheet includes: After preparing isopropanol and deionized water according to a molar ratio of 3:1, adding nano-aluminum oxide particles and a surfactant to obtain an isopropanol mixed solution, wherein the concentration of the nano-aluminum oxide particles is 0.8-1 wt%, and the concentration of the surfactant is 0.1-0.3 wt%; Immersing the array film layer in the isopropanol mixed solution, standing and soaking at 40-50 °C for 10 minutes to obtain a mixed solution; Applying a gradually changing electric field to the mixed solution, the direction of the electric field forms an angle of 30° with the normal of the surface of the array film layer, the electric field intensity gradually increases from 1 kV / m to 8 kV / m, and the increment interval for each level is 2 minutes, and the total treatment time is 12-16 minutes to obtain a primary deposition film layer; Applying ultrasonic waves to the mixed solution containing the primary deposition film layer for oscillation treatment, the frequency of the ultrasonic waves is set to 20-40 kHz, the power is 10-15 W, and the continuous application time is 6-10 minutes to obtain a strengthened film layer; Rinsing the strengthened film layer with deionized water and vacuum drying at 55-60 °C for 15-20 minutes to obtain an optical film sheet.

[0015] This application also discloses an optical film sheet prepared by the composite sputtering forming method as described in any one of the above.

[0016] Beneficial effects: A composite sputtering forming method for an optical film proposed in this application can effectively control the film deposition process by generating high-energy ion beams through a radio frequency plasma source and periodically adjusting the ion beam angle, significantly improving the uniformity of the film layer on the substrate surface. By using asymmetrically arranged target sputtering, local characteristic adjustment is achieved during the deposition of the primary film layer, making the surface morphology of the film layer more diverse and meeting the requirements for the complexity and functionality of the film layer structure. Further, by dividing the surface of the primary film layer into multiple regions and performing local nitriding treatment, not only the surface characteristics of the film layer are optimized, but also precise control of the nitrogen gas flow rate can be achieved in each region, thereby improving the optical performance of the film layer. By alternately using magnetron sputtering and pulsed laser sputtering, the quality and stability of the film layer are improved. Through reaction by introducing oxygen at a low temperature and further treatment by introducing argon at a high temperature, and by using electrolytic deposition technology, nano-aluminum oxide particles are deposited on the surface of the optical film layer, further enhancing the mechanical strength and durability of the film layer, strengthening the overall performance of the film sheet, enabling the optical film sheet to achieve the functionality and diversity of the film layer while ensuring the stability of the film layer structure and performance, and providing a more precise and efficient solution for the application of the optical film sheet. Description of the drawings

[0017] Figure 1 is a schematic diagram of the overall steps of a composite sputtering forming method for an optical film sheet in an embodiment of the present invention; Figure 2 is a schematic diagram of the steps of an embodiment of a composite sputtering forming method for an optical film sheet in an embodiment of the present invention.

[0018] The realization, functional characteristics, and advantages of the object of the present invention will be further described with reference to the embodiments and the accompanying drawings. Detailed implementation manners

[0019] In order to make the object, technical solution, and advantages of this application clearer, the following further details this application with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain this application and are not used to limit this application.

[0020] Those skilled in the art can understand that, unless specifically stated otherwise, the singular forms "a", "an", "the above" and "the" used herein may also include the plural forms. It should be further understood that the term "comprising" used in the specification of the present invention means the presence of features, integers, steps, operations, elements, modules and / or components, but does not exclude the presence or addition of one or more other features, integers, steps, operations, elements, modules, components and / or their groups. It should be understood that when an element is "connected" or "coupled" to another element, it can be directly connected or coupled to other elements, or there may also be intermediate elements. In addition, the "connection" or "coupling" used herein may include wireless connection or wireless coupling. The phrase "and / or" used herein includes all or any module and all combinations of one or more related listed items.

[0021] Those skilled in the art can understand that, unless otherwise defined, all terms used herein (including technical terms and scientific terms) have the same meaning as the general understanding of those of ordinary skill in the art to which the present invention pertains. It should also be understood that terms such as those defined in a general dictionary should be understood to have a meaning consistent with the meaning in the context of the prior art, and will not be interpreted with an idealized or overly formal meaning unless specifically defined as here.

[0022] Referring to Figure 1 , an embodiment of the present invention provides a composite sputtering forming method for an optical film, and the method includes: S1: Generating a high-energy ion beam based on a radio frequency plasma source to irradiate an optical substrate, and periodically adjusting the ion beam angle based on the shape of the optical substrate to obtain an initial substrate, where the ion beam angle ranges from 15° to 75°; In step S1, the radio frequency plasma source ionizes a gas by applying a radio frequency electric field to generate plasma, and accelerates ions in the plasma, and these ions will impact the substrate surface in the form of high energy. According to the shape of the substrate, the angle of the ion beam is periodically adjusted to enable it to adapt to the substrate surface with different curvatures. For example, when the substrate is flat, the ion beam angle can remain stable; while when the substrate is curved, the angle of the ion beam will be finely adjusted according to the shape of the curved surface to ensure that the ion beam can uniformly irradiate the substrate surface. The ion beam irradiation can change the energy state of the substrate surface during the film layer preparation process, thereby promoting the adhesion of the film layer. Under the action of the high-energy ion beam, some microscopic changes will occur on the substrate surface, such as the activation of surface atoms or molecules, enhancing the binding force between the film layer and the substrate, and further improving the stability and durability of the film layer. By adjusting the ion beam angle range (15° to 75°), precise control can be achieved on the substrate surfaces with different shapes, and a pre-treated substrate with nano-scale concave-convex microstructures can be obtained.

[0023] S2: Sputter a variety of asymmetrically arranged target materials onto the surface of the initial substrate to obtain a primary film layer, where the angular deviation of the asymmetric arrangement is 10° to 30°; In step S2, the asymmetrically arranged target materials refer to multiple target materials used during the sputtering process. Their layout is not symmetric in space and has a certain angular deviation, which is between 10° and 30°. Specifically, in this embodiment, a variety of target materials can be selected, which can be multiple target pieces of different materials or the same material. The arrangement of these target materials is different from the traditional symmetric arrangement and is arranged with a certain angular deviation, so that the particles during the sputtering process impact the substrate surface at different angles, resulting in subtle changes in the thickness, structure, and composition of the film layer. The angular deviation (10° to 30°) of the asymmetrically arranged target materials determines the structural characteristics of the film layer, such as the surface roughness of the film layer, the bonding force between the film layers, and the optical properties of the film layer, etc. By precisely adjusting the arrangement angle of the target materials, the direction of the sputtered particles impacting the surface can be controlled, thereby regulating the morphological characteristics of the film layer and forming a primary film layer with a gradient element distribution.

[0024] S3: Based on the surface characteristics of the primary film layer, divide the surface of the primary film layer into multiple regions, and introduce nitrogen to perform local nitridation on each region to obtain an optical film layer, where the nitrogen flow rate introduced into each region corresponds to the surface characteristics; In step S3, analyze the surface of the primary film layer to identify the surface characteristics of different regions. These characteristics can include surface roughness, film layer thickness, particle distribution, etc. The surface characteristics have a significant impact on the nitrogen flow rate introduced and the nitridation reaction. For example, regions with rough surfaces may require a larger nitrogen flow rate, while regions with larger thicknesses may require a smaller nitrogen flow rate. By regulating the nitrogen flow rate in different regions, the nitridation treatment of each region can achieve the best effect, thereby improving the uniformity and performance of the optical film layer and avoiding a decrease in film layer performance caused by over-nitridation. In this way, the finally obtained optical film layer will have better stability, durability, and optical properties in terms of physical properties.

[0025] S4: Place the optical film layer in a sputtering system, and alternately sputter the optical film layer using magnetron sputtering and pulsed laser sputtering to obtain a composite film layer; In step S4, magnetron sputtering is a sputtering technique that uses a magnetic field to enhance the reaction between the ion beam and the target surface. Through the action of the magnetic field, ions are effectively accelerated during sputtering, thereby increasing the deposition rate and quality of the film layer. Pulsed laser sputtering is a process in which a high-energy laser pulse irradiates the target, causing material evaporation and deposition onto the substrate surface. This technique has high deposition energy and target selectivity, and can generate finer and more uniform film layers. By alternately using these two techniques, their respective advantages can be fully utilized to obtain a composite film layer that meets the requirements of film layer combinations with different levels and properties. In the specific implementation process, the optical film layer is placed in a sputtering system, which is a device that can perform magnetron sputtering and pulsed laser sputtering simultaneously, or two independent sputtering chambers are used simultaneously. After the film layer is placed in the sputtering system, magnetron sputtering and pulsed laser sputtering are alternately carried out. By alternately using these two methods, double improvements in aspects such as film layer thickness, uniformity, and surface characteristics can be achieved. For example, magnetron sputtering can achieve a high deposition rate in a large area, thereby accelerating the formation of the film layer, while pulsed laser sputtering can precisely control the structure and composition of the film layer to form a finer microstructure, forming a composite film layer with an embedded nanoparticle array.

[0026] S5: Place the composite film layer in a reaction kettle, introduce oxygen at a low temperature state and react for a preset time, and then introduce argon at a high temperature state for reaction to obtain an array film layer; In step S5, the composite film layer is placed in a reaction kettle and oxygen is introduced for reaction at a low temperature state. This low-temperature reaction stage is carried out in the temperature range of 200 - 300 °C. The purpose is to promote the binding reaction between the film layer and oxygen by introducing oxygen, thereby improving the surface structure of the film layer. In particular, introducing oxygen elements makes the chemical composition of the film layer more stable and enhances the oxidation resistance of the film layer. Through the low-temperature oxidation reaction, a stable oxide structure can be formed, reducing the stress of the film layer and improving the adhesion of the film layer. After the low-temperature oxidation reaction is completed, the temperature is raised to a high temperature state (400 - 500 °C), and argon is introduced for reaction at this stage. Under high-temperature conditions, the residual stress in the film layer is released through gas diffusion, and it also helps to further improve the structure and surface quality of the film layer. The introduction of argon can reduce the number of defects on the film layer surface, reduce the side effects brought by the oxidation reaction, and ensure the uniformity and transparency of the film layer. The high-temperature argon reaction process can also optimize the crystallinity of the film layer and improve the mechanical properties of the film layer. Through segmented temperature increase and dynamic gas flow coupling adjustment, a self-assembled film layer with an ordered nanoparticle array is obtained.

[0027] S6: Immerse the array film layer in an isopropanol mixed solution containing nano-aluminum oxide particles, and pass direct current through the mixed solution for electrolytic deposition to obtain an optical film.

[0028] In step S6, an isopropanol mixed solution containing nano-aluminum oxide particles is prepared. Isopropanol is a solvent that can effectively dissolve aluminum oxide particles and keep them in a dispersed state, avoiding particle agglomeration, thereby ensuring the uniformity of the deposition process. Due to their small particle size and high surface area, the nano-aluminum oxide particles can form a dense protective layer with excellent mechanical properties and corrosion resistance on the surface of the film layer. The addition of nano-particles can also significantly improve the optical properties of the film layer, especially in enhancing the anti-reflection ability of the film layer and the durability of the film layer. The array film layer is immersed in this solution so that the entire surface of the film layer can come into contact with the nano-aluminum oxide particles in the solution. At this time, by passing a direct current through the mixed solution (i.e., the electrolytic deposition process), the aluminum oxide particles in the solution migrate and deposit on the surface of the array film layer under the action of the electric field. During this process, the intensity of the current and the deposition time will directly affect the thickness and quality of the deposited layer. At an appropriate current density, the nano-aluminum oxide particles will gradually deposit on the surface of the film layer to form a uniform and dense thin film. As the deposition progresses, this aluminum oxide thin film will form a protective layer on the surface of the array film layer, improving the hardness, wear resistance, and corrosion resistance of the film layer, and obtaining an optical film with excellent mechanical properties.

[0029] In one embodiment, the asymmetrically arranged target includes any combination of three or more of titanium, silicon, chromium, aluminum, and zirconium. The selection of these target combinations aims to form a film layer with specific optical and mechanical properties on the substrate through a composite sputtering process. Titanium has high strength and good corrosion resistance, silicon can adjust the optical refractive index of the film layer, chromium has high hardness and good wear resistance, aluminum has good reflection performance and makes a significant contribution to improving the anti-reflection ability and optical efficiency of the film layer; zirconium can enhance the high-temperature resistance and chemical stability of the film layer. By precisely controlling the sputtering rate and sputtering time of these targets, the composition and structure of the film layer can be optimized, thereby obtaining an optical film with excellent comprehensive performance. In addition, the asymmetric arrangement design helps to form a more uniform In one embodiment, the step of generating a high-energy ion beam based on a radio frequency plasma source to irradiate an optical substrate and periodically adjusting the ion beam angle based on the shape of the optical substrate to obtain an initial substrate, where the ion beam angle ranges from 15 to 75°, includes: Placing the optical substrate in a plasma processing chamber, adjusting the radio frequency power of the plasma processing chamber to 100 - 150 W to generate a high-energy ion beam, the ion beam energy ranges from 100 - 150 eV, and the multi-stage bias voltage varies dynamically between 10 - 50 V, and the processing time is 5 - 10 minutes to obtain an excited substrate; The surface curvature data of the excitation substrate is obtained based on an optical profiler, and the ion beam irradiation angle is adjusted in segments within the range of 15° to 75°, with each adjustment period being 10 to 20 seconds, to obtain the initial substrate.

[0030] In the above embodiment, the optical substrate is placed in a plasma processing chamber, and the radio frequency power is adjusted to 100 - 150 W to generate a high-energy ion beam. In the plasma processing chamber, the adjustment of the radio frequency power is one of the key parameters. By adjusting the radio frequency power, the energy and density of the ion beam generated in the plasma source can be controlled. When the radio frequency power is 100 - 150 W, it can effectively excite the plasma to generate high-energy ions, and these ions will serve as the irradiation source to affect the surface characteristics of the optical substrate. The energy range of the ion beam is set to 100 - 150 eV, and the bias voltage of the ion beam varies dynamically between 10 - 50 V. The function of this multi-stage bias voltage is to further optimize the effect of the ion beam and improve the efficiency of the interaction between the ions and the substrate surface. By setting different bias voltages, the energy distribution of the ion beam can be adjusted, thereby more precisely controlling the surface topography of the optical substrate. The surface curvature data of the excitation substrate is obtained based on an optical profiler to measure the surface shape or curvature of the excitation substrate. The optical profiler can obtain accurate curvature data of the substrate surface in a non-contact manner, and these data reflect the geometric characteristics of the optical substrate surface in space, such as the magnitude and variation of the curvature, etc. According to the curvature data, the irradiation angle of the ion beam is controlled to be adjusted in segments within the range of 15° to 75°, and each adjustment period is 10 - 20 seconds. This periodic adjustment enables the ion beam to irradiate the substrate surface at different angles, thereby ensuring the uniformity and accuracy of the substrate surface treatment. Within each adjustment period, the irradiation angle of the ion beam will change. Depending on the different curvature data, the angle will vary within the range of 15° to 75°. Through this adjustment, the surface treatment effect of the ion beam on different regions can be optimized to ensure that the entire optical substrate surface can be uniformly irradiated by high-energy ions.

[0031] In one embodiment, the step of sputtering a plurality of asymmetrically arranged target materials on the surface of the initial substrate to obtain a primary film layer, wherein the angular deviation of the asymmetric arrangement is 10 - 30°, includes: The initial substrate is placed in a multi-target sputtering chamber, and the deviation of the three-dimensional tilt angle of the substrate fixture from the central axis of the target material is adjusted to be 10 - 30° to obtain a pre-positioned substrate; A plurality of asymmetrically arranged target materials are respectively fixed in the sputtering chamber, and the included angle between the target materials is offset by 10 - 30° in sequence. The radio frequency power of each target material is independently adjusted to vary dynamically within the range of 50 - 150 W; Control the start of the sputtering chamber, set the pulse frequency to 100 - 500 Hz, alternately turn on the sputtering duration of different targets for 5 - 15 minutes per round, and deposit for 3 - 6 rounds to obtain a composite primary film layer with a multi-layer structure.

[0032] In the above embodiment, place the initial substrate into the multi-target sputtering chamber, adjust the three-dimensional tilt angle of the substrate fixture so that the deviation of the substrate relative to the central axis of the target is 10 - 30°, achieving an asymmetric arrangement with the target, in order to form the required film layer structure on the substrate surface. Fix multiple different targets into the sputtering chamber, and the angles between the targets are offset by 10 - 30° in sequence. The purpose of this operation is to ensure that during the sputtering process, the substrate surface can receive sputtering particles from each target at different angles, thereby depositing different thin film layers on the surface. In actual operation, the angular offset between the targets can achieve different hierarchical structures of the film layer, and the properties of each layer of the film may vary due to the angular deviation, thus endowing the final film layer with composite characteristics. This asymmetric arrangement of target design not only helps to form the diversity of the film layer, but also can control the composition and thickness of the film layer by adjusting the RF power of different targets. During the sputtering process, the RF power of each target will vary dynamically within the range of 50 - 150 W. After controlling the start of the sputtering chamber, the pulse frequency is set to 100 - 500 Hz, alternately turn on the sputtering duration of different targets for 5 - 15 minutes per round, and deposit for 3 - 6 rounds to form a composite primary film layer with a multi-layer structure. The setting of the pulse frequency is to control the release frequency of sputtering particles, thereby affecting the deposition rate and quality of the film layer. The level of the pulse frequency is directly related to the periodicity of particle emission during the sputtering process. When the frequency is higher, the particles are released faster and the deposition rate will also be higher. By adjusting the pulse frequency, the structure and thickness of the film layer can be controlled more precisely, making the deposited multi-layer film have uniformity and the required characteristics. During each round of sputtering process, the sputtering duration of the target is set to 5 - 15 minutes, so that the thin film of each target can be effectively deposited and different hierarchical structures can be formed on the substrate surface. During the deposition process of multiple rounds, each layer of the film will be stacked in sequence to form a film layer with a composite structure. After each round of sputtering, the substrate will be cooled or adjusted to a certain extent to ensure that the deposition effect of the subsequent film layer is not affected by the previous layer. The continuous progress of the entire deposition process enables each round of the film layer to be well combined with the previous layer, thus forming a composite film with a multi-layer structure.

[0033] In one embodiment, referring to Figure 2 , divide the surface of the primary film layer into multiple regions based on the surface characteristics of the primary film layer, introduce nitrogen gas to perform local nitridation on each region to obtain an optical film layer, wherein the nitrogen gas flow rate of each region corresponding to the surface characteristics steps includes: S31: Obtain the three-dimensional topography of the primary film layer based on the scanning device to obtain the surface feature data of the primary film layer, where the surface feature data includes surface height fluctuations and roughness parameter differences; S32: Input the surface feature data into a computer, and divide the surface of the primary film layer into multiple regions based on the surface height fluctuations and roughness parameter differences. The boundary of each region is marked by a contour line with a height difference greater than 3 nm or a roughness change rate exceeding 20%; S33: Control the number of partitions within 5 to 15, and the area range of each region is 0.1 to 1 mm². After the division is completed, mark the surface of the primary film layer to obtain a partitioned film layer; S34: Place the partitioned film layer in a reaction kettle, and adjust the position of the multi-channel nozzle of the nitrogen gas inlet device so that each nozzle corresponds to a partition region; S35: Start the nitrogen gas inlet device to perform local nitrogen gas spraying treatment on the surface of the partitioned film layer to obtain an optical film layer, where the nitrogen gas flow value is proportional to the average height fluctuation and the average roughness of the corresponding region.

[0034] In the above embodiments, the three-dimensional topography of the primary film layer is obtained by a scanning device. The scanning device can adopt precision instruments such as an optical scanning microscope (OM), an atomic force microscope (AFM), or a scanning electron microscope (SEM) to capture the microscopic topography of the film layer surface, obtain the height data of the surface undulations and the roughness parameters. After obtaining the surface feature data, these data are input into a computer. The computer system divides the surface of the primary film layer into multiple regions according to the differences in the surface height undulations and roughness parameters, combined with the preset standards. These boundaries are marked by judging the contour lines where the height difference is greater than 3 nanometers or the roughness change rate exceeds 20%. In actual operation, there may be some small protrusions or depressions on the surface. If these undulations reach a certain standard, they will become the basis for region division. After region division, the area of each region is controlled between 0.1 and 1 square millimeter to ensure that the size of each region is suitable for local nitriding treatment. The number of partitions is controlled between 5 and 15. Such a number can maintain the processing accuracy without being excessive. After completing the region division, the surface of the primary film layer is marked, which can accurately locate each region in actual operation and perform corresponding nitrogen treatment. The partitioned film layer is placed in a reaction kettle for local nitrogen injection treatment. The nitrogen inlet device is equipped with multi-channel nozzles, which can accurately inject nitrogen into each partition region. Each nozzle corresponds to a specific partition region. The position adjustment of the nozzle can be controlled by a computer, and each nozzle is positioned according to the mark of the partitioned film layer. After starting the nitrogen inlet device, nitrogen will enter each partition region at a set flow rate and perform local injection on the film layer surface of this region, and finally an optical film layer is obtained. The flow rate value of nitrogen is closely related to the surface features of each region, especially proportional to the average value of the height undulations and the average value of the roughness of the region. That is to say, for regions with larger surface undulations or higher roughness, the nitrogen flow rate will be appropriately increased to ensure that nitrogen can effectively react with the surface of this region and improve its surface quality. For regions with a relatively flat surface or lower roughness, the nitrogen flow rate can be appropriately reduced to avoid over-nitriding or wasting nitrogen.

[0035] In another embodiment, the calculation expression of the above steps in the computer system is: ; Wherein, is the nitrogen flow rate of the i-th region, the nitrogen flow rate required for each partition region; α is the influence factor of the surface feature on the nitrogen flow rate, reflecting the surface roughness, undulation and sensitivity of the nitriding reaction of the film layer, and the value can be set between 0.1 and 2; β is the non-linear response index of the height undulation to the flow rate, indicating the response relationship between the height undulation of the film layer surface and the nitrogen flow rate, and can be set between 1 and 2; is the surface roughness (Ra) of region j, representing the average height of the microscopic protrusions on the film surface. The higher the roughness, the greater the nitrogen flow rate should be to enhance the nitriding effect; is the average surface height of region j, representing the average height fluctuation of the film in this region and reflecting the overall fluctuation degree of the region. The higher the value, the greater the nitrogen flow rate should be; γ is the weighted coefficient of the roughness change on the flow rate, used to control the influence of the roughness parameter change rate on the nitrogen flow rate, and can be set to a value less than 1; is the maximum surface height difference of region j, reflecting the extreme difference in surface undulation within the region. If this difference is large, the nitrogen flow rate needs to be appropriately increased; is the area of region j, which is the basis for calculating the nitrogen flow rate of each region. The larger the area of the region, the greater the nitrogen flow rate required. This calculation expression first obtains the three-dimensional topography data of the film surface through a scanning device, including features such as surface roughness, undulation height, and maximum height difference. Then, after the computer system processes these data, the film is divided into multiple regions according to the surface features. The nitrogen flow rate of each region is calculated by the weighted influence of the surface roughness, undulation mean value, and maximum difference of the region. Specifically, the product of the roughness and height undulation in the formula is non-linearly adjusted to ensure a reasonable response for each region, and the maximum difference is used to further increase the correction for surface non-uniformity. The calculation of the nitrogen flow rate also considers the area of the region and the change rate of the surface features to ensure that appropriate nitrogen flow rates are obtained for different regions, ultimately completing the local nitriding treatment and optimizing the optical properties of the film.

[0036] In one embodiment, the step of placing the optical film layer in a sputtering system and alternately sputtering the optical film layer using magnetron sputtering and pulsed laser sputtering to obtain a composite film layer includes: Placing the optical film layer in a vacuum chamber, maintaining it at 200 - 350 °C for 10 - 15 minutes, and cooling it to room temperature by gradient to obtain an initial optical film layer; Configuring the magnetron sputtering target as a multi-component oxide combination and the pulsed laser sputtering target as metal particles to form a sputtering system; Placing the initial optical film layer in the sputtering system, operating magnetron sputtering and pulsed laser sputtering alternately in the sputtering system with an alternating cycle of 0.1 - 0.5 seconds. Among them, magnetron sputtering uses a bias voltage of 50 - 80 V, and pulsed laser sputtering uses a laser beam with an energy density of 2 - 5 J / cm², and continuously deposits for 40 - 50 minutes to obtain a composite film layer embedded with a nano-particle array.

[0037] In the above embodiments, the optical film layer is placed in a vacuum chamber for pretreatment, heated to a temperature range of 200 to 350 °C, and maintained for 10 to 15 minutes to improve the thermal stability of the film layer. Then, the temperature is gradually reduced to room temperature by means of gradient cooling. This cooling method can effectively avoid thermal stress in the film layer during the cooling process, thereby reducing the risk of cracks or peeling in the film layer. The magnetron sputtering target is configured as a combination of multiple oxides, and the pulsed laser sputtering target uses metal particles to achieve the composite modification of the optical film layer. Different nano-particles are embedded in the film layer by different sputtering methods. Magnetron sputtering is carried out by applying a magnetic field to the sputtering target, so that charged particles are released from the surface of the target. In a high-vacuum environment, these particles will hit the optical film layer, thereby depositing a new material. In contrast, pulsed laser sputtering irradiates the surface of the target with a laser beam, causing laser breakdown of the target and releasing material particles, which are further deposited on the surface of the film layer. These two different sputtering methods complement each other during the formation of the composite film layer, and can introduce different structural characteristics and properties to the film layer. During the sputtering process, the initial optical film layer is placed in the sputtering system, and magnetron sputtering and pulsed laser sputtering are performed at a certain alternating cycle. In this embodiment, the alternating cycle of magnetron sputtering and pulsed laser sputtering is set to 0.1 to 0.5 seconds, that is, within every time interval of 0.1 to 0.5 seconds, magnetron sputtering and pulsed laser sputtering will alternate. The bias voltage of magnetron sputtering is set to 50 to 80 volts. The function of this bias voltage is to accelerate the energy of the sputtering particles, so that they can be effectively deposited on the surface of the optical film layer, and improve the bonding strength of the film layer by increasing the energy of the sputtering particles. The pulsed laser sputtering uses a laser beam with an energy density of 2 to 5 J / cm². The magnitude of the energy density determines the energy intensity released when the laser irradiates the surface of the target. During the entire sputtering process, magnetron sputtering and pulsed laser sputtering alternate. By continuously changing the sputtering method, it is possible to ensure the uniform distribution of nano-particles in the composite film layer. Under the alternating action of magnetron sputtering and pulsed laser sputtering, the sputtered material will be evenly embedded in the optical film layer, thereby forming a nano-particle array inside the film layer. The array structure of these nano-particles is beneficial to improving the optical properties of the film layer, enhancing its hardness, and improving wear resistance, etc. The entire sputtering process lasts for 40 to 50 minutes. This period of time is sufficient to ensure the sufficient deposition of nano-particles in the film layer and to form a nano-particle array with an ideal arrangement and distribution in the film layer. By means of this alternating sputtering method, the finally obtained composite film layer not only has the basic functions of the optical film layer, but also has other excellent properties brought by the embedded nano-particles, such as better antireflection performance and improved weather resistance, etc.

[0038] In one embodiment, the combination of multiple oxides is one or more combinations of alumina, zirconia, titania, and silica, and the metal particles are one or more of gold, silver, copper, and nickel.

[0039] In one embodiment, the step of placing the composite film layer in a reaction kettle, introducing oxygen at a low temperature state to react for a preset time, and then introducing argon at a high temperature state to react to obtain an array film layer includes: Placing the composite film layer in a reaction kettle, introducing oxygen in a low temperature environment of 80-150 °C for surface oxidation reaction to obtain a surface-oxidized composite film layer; Gradually heating the surface-oxidized composite film layer in the reaction kettle to 250-350 °C, and introducing a mixed gas of argon and oxygen for atmosphere regulation to obtain a transition-state film layer; Placing the transition-state film layer in a high temperature environment of 400-600 °C and introducing argon for lattice rearrangement and surface planarization to obtain a reconstructed film layer; Placing the reconstructed film layer in a sealed chamber containing silane gas for surface silanization penetration to obtain the array film layer.

[0040] In the above embodiments, the composite film layer is placed in a reaction kettle, and oxygen is introduced under low-temperature conditions for surface oxidation reaction. The temperature is set between 80 and 150 °C. The low temperature helps to control the reaction rate and ensure the smooth progress of the surface reaction between oxygen and the composite film layer without overly affecting the internal structure of the film layer. During this process, oxygen mainly acts on the surface of the composite film layer to cause an oxidation reaction, forming a surface-oxidized composite film layer. The surface-oxidized composite film layer is gradually heated from a low-temperature environment to 250 to 350 °C, and a mixed gas of argon and oxygen is introduced for atmosphere regulation. The goal of this process is to obtain a transition-state film layer. At this stage, the mixed gas of argon and oxygen plays a role in regulating the atmosphere and providing an appropriate environment. As an inert gas, argon can ensure that no unnecessary oxidation or reduction reactions occur during the temperature increase process, maintaining the stability of the film layer. Oxygen continues to participate in the surface reaction to a certain extent, promoting the further modification of the film layer. By heating, the microstructure and surface morphology of the film layer change, forming a transition-state film layer. The transition-state film layer is placed in a high-temperature environment of 400 to 600 °C, and argon is introduced for the process of lattice rearrangement and surface flattening. The core purpose of this step is to use high temperature to rearrange the atoms or molecules inside the film layer, optimize its lattice structure, and achieve a more stable and regular arrangement. Through this process, the surface morphology of the film layer is flattened, eliminating the rough surface or uneven structure caused by previous oxidation or temperature increase and decrease steps. In addition, at this high-temperature stage, the main role of argon is still to maintain an inert environment, avoiding excessive chemical reactions from interfering with the lattice rearrangement process of the film layer. The reconstructed film layer is transferred to a sealed chamber containing silane gas for surface silanization penetration to further improve the surface properties of the film layer, introduce organosilicon groups, and enhance the hydrophobicity, corrosion resistance, and other surface functions of the film layer. After the silane gas penetrates the surface of the film layer, a uniform silane layer will be formed on the surface of the film layer, endowing the film layer surface with new properties different from the original material. The silanization process not only enhances the surface performance of the film layer.

[0041] In one embodiment, the step of immersing the array film layer in an isopropanol mixed solution containing nano-aluminum oxide particles and passing direct current through the mixed solution for electrodeposition to obtain an optical film sheet includes: After preparing isopropanol and deionized water according to a molar ratio of 3:1, nano-aluminum oxide particles and a surfactant are added to obtain an isopropanol mixed solution, wherein the concentration of the nano-aluminum oxide particles is 0.8 to 1 wt%, and the concentration of the surfactant is 0.1 to 0.3 wt%; The array film layer is immersed in the isopropanol mixed solution and left to soak at 40 to 50 °C for 10 minutes to obtain a mixed solution; Apply a gradually changing electric field to the mixed solution, with the direction of the electric field making an angle of 30° with the normal of the surface of the array film layer. The electric field strength gradually increases from 1 kV / m to 8 kV / m, with an increment interval of 2 minutes for each level, and the total treatment time is 12 - 16 minutes to obtain a primary sedimentation film layer; Apply ultrasonic waves to the mixed solution containing the primary sedimentation film layer for oscillating treatment. The frequency of the ultrasonic waves is set to 20 - 40 kHz, the power is 10 - 15 W, and the continuous application time is 6 - 10 minutes to obtain a strengthened film layer; Rinse the strengthened film layer with deionized water and vacuum dry it at 55 - 60 °C for 15 - 20 minutes to obtain an optical film.

[0042] In the above embodiments, isopropyl alcohol and deionized water are mixed at a molar ratio of 3:1. This ratio helps to adjust the dissolution ability of the solution and its compatibility with the nanoparticles. Nanometer alumina particles are added, and these particles serve as the base substances for deposition, with the concentration set at 0.8 - 1 wt% (weight percentage). Due to their extremely small size and high specific surface area, the nanometer alumina particles can effectively enhance the strength, hardness, and surface smoothness of the film layer, making the final optical film more wear-resistant and having excellent optical transparency during use. A surfactant is added, and the concentration of the surfactant is set at 0.1 - 0.3 wt%. This improves the dispersion of the nanoparticles in the solution and prevents particle aggregation, thus ensuring that the alumina particles can be evenly deposited on the film layer surface during the deposition process to form a uniform preliminary film layer. The array film layer is immersed in the above-prepared isopropyl alcohol mixed solution for soaking. The soaking temperature is controlled between 40 - 50 °C. This temperature range helps to enhance the activity of the particles in the solution and at the same time does not cause the solution to evaporate too quickly, ensuring that the alumina particles in the solution fully act on the film layer surface. Soaking for 10 minutes is sufficient for the film layer to fully contact the nanoparticles in the solution and form a preliminary deposition environment. At this stage, the alumina particles in the solution will be adsorbed or slightly deposited on the surface of the array film layer. A direct current electric field is applied to this mixed solution for electrolytic deposition. During this process, the direction of the electric field forms an angle of 30° with the normal of the array film layer surface. This angle helps to form a uniform and directional deposition structure on the film layer surface. The electric field intensity gradually increases from 1 kV / m to 8 kV / m, and the increment interval for each stage is 2 minutes, with the total processing time being 12 - 16 minutes. This process controls the deposition rate and the quality of the film layer through the gradient change of the electric field intensity, making the deposition layer form more uniformly in the initial stage, and as the electric field intensity increases, the deposition gradually becomes denser. The action of the electric field can promote the migration of the nanoparticles in the solution towards the surface of the array film layer and form a preliminary deposition film under the action of the electric field. After the electrolytic deposition is completed, it enters the ultrasonic treatment stage. At this time, the solution containing the preliminarily deposited film layer is ultrasonically oscillated. The frequency of the ultrasonic wave is set between 20 - 40 kHz, the power is 10 - 15 W, and the duration is 6 - 10 minutes. Through the high-frequency oscillation of the ultrasonic wave, the particles in the solution are promoted to be evenly distributed, and the deposited film layer becomes more uniform and dense. The ultrasonic wave can, through the explosion or vibration effect of the generated microbubbles, promote the more uniform deposition of the deposits on the surface of the array film layer, and at the same time reduce the possible particle aggregation phenomenon during the deposition process, improving the uniformity and optical effect of the film layer. After the ultrasonic treatment is completed, the strengthened film layer is rinsed with deionized water to remove the impurities or insufficiently deposited particles that may remain on the surface. Finally, through the step of vacuum drying, the solvent and moisture in the film layer are further removed to ensure that the film layer is completely dry and avoid the influence of moisture on the performance of the optical film.The temperature of vacuum drying is set between 55 and 60 °C, and the duration is 15 to 20 minutes. Such temperature and time settings can effectively remove the residual solvent while avoiding deformation or damage of the film layer due to excessive temperature during drying.

[0043] This application also discloses an optical film obtained by using the composite sputtering forming method described in any one of the above. Correspondingly, it also has the advantages and characteristics corresponding to the above composite sputtering forming method, which will not be elaborated here one by one.

[0044] The above are only the preferred embodiments of the present invention, and do not limit the patent scope of the present invention accordingly. Any equivalent structure or equivalent process transformation made by using the content of the specification and drawings of the present invention, or directly or indirectly applied in other related technical fields, shall be equally included in the patent protection scope of the present invention.

Claims

1. A composite sputtering forming method for an optical film, characterized in that, The method includes: Generating a high-energy ion beam based on a radio frequency plasma source to irradiate an optical substrate, and periodically adjusting the ion beam angle based on the shape of the optical substrate to obtain an initial substrate, wherein the ion beam angle ranges from 15° to 75°; Sputtering a variety of asymmetrically arranged target materials onto the surface of the initial substrate to obtain a primary film layer, wherein the angular deviation of the asymmetric arrangement is 10° to 30°; Dividing the surface of the primary film layer into multiple regions based on the surface characteristics of the primary film layer, and introducing nitrogen to perform local nitridation on each region to obtain an optical film layer, wherein the nitrogen flow rate introduced into each region corresponds to the surface characteristics; Placing the optical film layer in a sputtering system, and alternately sputtering the optical film layer by magnetron sputtering and pulsed laser sputtering to obtain a composite film layer; Placing the composite film layer in a reaction kettle, introducing oxygen at a low temperature state to react for a preset time, and then introducing argon at a high temperature state to react to obtain an array film layer; Immersing the array film layer in an isopropanol mixed solution containing nano-aluminum oxide particles, and introducing direct current into the mixed solution for electrolytic deposition to obtain an optical film.

2. The composite sputtering forming method of the optical film according to claim 1, characterized in that, The asymmetrically arranged target materials include any combination of three or more of titanium, silicon, chromium, aluminum, and zirconium.

3. The composite sputtering forming method of the optical film according to claim 1, characterized in that, The step of generating a high-energy ion beam based on a radio frequency plasma source to irradiate an optical substrate, and periodically adjusting the ion beam angle based on the shape of the optical substrate to obtain an initial substrate, wherein the ion beam angle ranges from 15° to 75°, includes: Placing the optical substrate in a plasma processing chamber, adjusting the radio frequency power of the plasma processing chamber to 100 - 150 W to generate a high-energy ion beam, the ion beam energy ranges from 100 - 150 eV, the multi-stage bias voltage varies dynamically between 10 - 50 V, and the processing time is 5 - 10 minutes to obtain an excited substrate; Based on the surface curvature data obtained by an optical profiler, the ion beam irradiation angle is adjusted in segments within the range of 15° to 75°, and each adjustment period is 10 - 20 seconds to obtain the initial substrate.

4. The composite sputtering forming method of the optical film according to claim 1, characterized in that, The step of sputtering a variety of asymmetrically arranged target materials onto the surface of the initial substrate to obtain a primary film layer, wherein the angular deviation of the asymmetric arrangement is 10° to 30°, includes: Placing the initial substrate in a multi-target sputtering chamber, adjusting the deviation of the three-dimensional tilt angle of the substrate fixture from the central axis of the target material to 10° to 30° to obtain a pre-positioned substrate; Fixing a variety of asymmetrically arranged target materials in the sputtering chamber respectively, the included angle between the target materials is offset by 10° to 30° in sequence, and the radio frequency power of each target material is independently adjusted to vary dynamically within the range of 50 - 150 W; Controlling the sputtering chamber to start, setting the pulse frequency to 100 - 500 Hz, alternately turning on the sputtering duration of different target materials for 5 - 15 minutes per round, and depositing for 3 - 6 rounds to obtain a composite primary film layer with a multi-layer structure.

5. The composite sputtering forming method of the optical film according to claim 1, characterized in that The step of dividing the surface of the primary film layer into multiple regions based on the surface characteristics of the primary film layer, and introducing nitrogen to perform local nitridation on each region to obtain an optical film layer, wherein the nitrogen flow rate introduced into each region corresponds to the surface characteristics, includes: Obtain the three-dimensional topography of the primary film layer by a scanning device to obtain the surface feature data of the primary film layer, where the surface feature data includes surface height fluctuations and roughness parameter differences; Input the surface feature data into a computer, and divide the surface of the primary film layer into multiple regions based on the surface height fluctuations and roughness parameter differences. The boundary of each region is marked by a contour line with a height difference greater than 3 nm or a roughness change rate exceeding 20%; Control the number of partitions to be 5 - 15, and the area range of each region is 0.1 - 1 mm². After the division is completed, mark the surface of the primary film layer to obtain a partitioned film layer; Place the partitioned film layer in a reaction kettle, and adjust the position of the multi-channel nozzle of the nitrogen gas inlet device so that each nozzle corresponds to a partition region; Start the nitrogen gas inlet device, and perform local nitrogen gas spraying treatment on the surface of the partitioned film layer to obtain an optical film layer, where the nitrogen gas flow value is proportional to the average height fluctuation and the average roughness of the corresponding region.

6. The composite sputtering forming method of the optical film according to claim 1, characterized in that The step of placing the optical film layer in a sputtering system and alternately sputtering the optical film layer by magnetron sputtering and pulsed laser sputtering to obtain a composite film layer includes: Place the optical film layer in a vacuum chamber, maintain it at 200 - 350 °C for 10 - 15 minutes, and cool it to room temperature by gradient cooling to obtain an initial optical film layer; Configure the magnetron sputtering target as a multi-component oxide combination, and the pulsed laser sputtering target as metal particles to form a sputtering system; Place the initial optical film layer in the sputtering system, and operate magnetron sputtering and pulsed laser sputtering in an alternating cycle of 0.1 - 0.5 seconds in the sputtering system. Among them, magnetron sputtering uses a bias voltage of 50 - 80 V, and pulsed laser sputtering uses a laser beam with an energy density of 2 - 5 J / cm², and continuously deposit for 40 - 50 minutes to obtain a composite film layer embedded with a nano-particle array.

7. The composite sputtering forming method of the optical film according to claim 6, characterized in that, The multi-component oxide combination is one or more combinations of alumina, zirconia, titanium oxide, and silicon oxide, and the metal particles are one or more of gold, silver, copper, and nickel.

8. The composite sputtering forming method of the optical film according to claim 1, wherein The step of placing the composite film layer in a reaction kettle, introducing oxygen to react for a preset time at a low temperature state, and then introducing argon to react at a high temperature state to obtain an array film layer includes: Place the composite film layer in a reaction kettle, introduce oxygen in a low temperature environment of 80 - 150 °C for surface oxidation reaction to obtain a surface-oxidized composite film layer; Gradually heat the surface-oxidized composite film layer in the reaction kettle to 250 - 350 °C, and introduce a mixed gas of argon and oxygen for atmosphere regulation to obtain a transition-state film layer; Place the transition-state film layer in a high temperature environment of 400 - 600 °C and introduce argon for lattice rearrangement and surface planarization to obtain a reconstructed film layer; Place the reconstructed film layer in a sealed chamber containing silane gas for surface silanization penetration to obtain the array film layer.

9. The composite sputtering forming method of the optical film according to claim 1, characterized in that, The step of immersing the array film layer in an isopropyl alcohol mixed solution containing nano-aluminum oxide particles and passing direct current through the mixed solution for electrolytic deposition to obtain an optical film sheet includes: After preparing isopropyl alcohol and deionized water in a molar ratio of 3:1, nano-aluminum oxide particles and a surfactant are added to obtain an isopropyl alcohol mixed solution, wherein the concentration of the nano-aluminum oxide particles is 0.8 to 1 wt%, and the concentration of the surfactant is 0.1 to 0.3 wt%. The array film layer is immersed in the isopropyl alcohol mixed solution and left to soak at 40 to 50 °C for 10 minutes to obtain a mixed solution. A gradient-changing electric field is applied to the mixed solution, the direction of the electric field forms an angle of 30° with the normal of the surface of the array film layer, the electric field strength gradually increases from 1 kV / m to 8 kV / m, the increment interval for each level is 2 minutes, and the total treatment time is 12 to 16 minutes to obtain a primary sedimentation film layer. Ultrasonic waves are applied to the mixed solution containing the primary sedimentation film layer for oscillating treatment, the frequency of the ultrasonic waves is set to 20 to 40 kHz, the power is 10 to 15 W, and the continuous application time is 6 to 10 minutes to obtain a strengthened film layer. The strengthened film layer is rinsed with deionized water and vacuum-dried at 55 to 60 °C for 15 to 20 minutes to obtain an optical film.

10. An optical film, characterized in that, It is prepared by using the composite sputtering forming method according to any one of claims 1 to 9.

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