Method and system for regulating and controlling seeding power

Abstract

The invention provides a seeding power regulation and control method and system.The regulation and control method comprises the steps that historical operation parameters of a single crystal furnace in the seeding stage are obtained, seeding compensation power is determined according to the historical operation parameters and standard operation parameters corresponding to all the historical operation parameter values, and the seeding compensation power is obtained; the seeding compensation power is determined according to the ratio of each historical operation parameter to the corresponding standard operation parameter, and determining the current seeding power of the single crystal furnace according to the last seeding power of the single crystal furnace and the seeding compensation power. According to the method, the current seeding power can be automatically determined according to the historical operation parameters, the efficiency is high, and the regulation and control precision of the seeding power can be improved.

Description

Technical Field

[0001] The present application relates to the technical field of single crystal manufacturing, and in particular, to a method and a system for regulating the seeding power. Background Art

[0002] As one of the crucial basic materials in the semiconductor industry, single crystal silicon has extremely high requirements for its purity and the integrity of the crystal structure. The quality of single crystal silicon directly has a profound impact on the performance of a series of products such as integrated circuits and solar cells.

[0003] As the core key equipment for preparing single crystal silicon, the power control of the single crystal furnace plays an important role in the quality and efficiency of single crystal growth. In the traditional single crystal furnace during the seeding stage, the adjustment of the seeding power mostly depends on the experience of the operator. The operator needs to manually record historical parameters such as the shoulder opening time and the seeding pulling speed, and rely on experience to judge the next seeding power. This method not only has low efficiency, but is also easily affected by the subjective factors of the operator. Due to the uneven levels of the operators, the judged next seeding power is likely to have a large deviation, which in turn affects the crystal quality of the single crystal silicon. Summary of the Invention

[0004] In view of this, the purpose of the present application is to provide a method and a system for regulating the seeding power, which can automatically determine the current seeding power according to the historical operation parameters, not only with high efficiency, but also helpful for improving the regulation accuracy of the seeding power.

[0005] In a first aspect, an embodiment of the present application provides a method for regulating the seeding power, and the regulation method includes:

[0006] Obtain the historical operation parameters of the single crystal furnace during the seeding stage;

[0007] Determine the seeding compensation power according to the historical operation parameters and the standard operation parameters corresponding to each historical operation parameter value; the seeding compensation power is determined according to the ratio between each historical operation parameter and the corresponding standard operation parameter;

[0008] Determine the current seeding power of the single crystal furnace according to the last seeding power of the single crystal furnace and the seeding compensation power.

[0009] In an optional embodiment, the historical operation parameters include the seeding temperature drop amplitude, the seeding pulling speed, the shoulder opening time, the pulling speed during the shoulder opening process, and the temperature of the single crystal furnace.

[0010] In an optional embodiment, the determining the seeding compensation power according to the historical operation parameters and the standard operation parameters corresponding to each historical operation parameter value includes:

[0011] Calculate a first ratio between the shoulder opening time and the standard shoulder opening time, a second ratio between the seeding pulling speed and the standard seeding pulling speed, a third ratio between the seeding temperature drop amplitude and the standard seeding temperature drop amplitude, a fourth ratio between the pulling speed during the shoulder opening process and the standard pulling speed during the shoulder opening process, and a fifth ratio between the single crystal furnace temperature and the standard single crystal furnace temperature;

[0012] Assign a first weight coefficient, a second weight coefficient, a third weight coefficient, a fourth weight coefficient, and a fifth weight coefficient to the first ratio, the second ratio, the third ratio, the fourth ratio, and the fifth ratio, respectively;

[0013] Determine the seeding compensation power according to the first ratio and the corresponding first weight coefficient, the second ratio and the corresponding second weight coefficient, the third ratio and the corresponding third weight coefficient, the fourth ratio and the corresponding fourth weight coefficient, and the fifth ratio and the corresponding fifth weight coefficient.

[0014] In an alternative embodiment, calculate the seeding compensation power through the following formula:

[0015] P0 = [(t / t0)*k1+(V / V0)*k2+(ΔT / ΔT0)*k3+(V / V 放0 )*k4+(T / T0)*k5];

[0016] Wherein, P0 represents the seeding compensation power, t represents the shoulder opening time, t0 represents the standard shoulder opening time, k1 represents the first weight coefficient, V represents the seeding pulling speed, V0 represents the standard seeding pulling speed, k2 represents the second weight coefficient, ΔT represents the seeding temperature drop amplitude, ΔT0 represents the standard seeding temperature drop amplitude, k3 represents the third weight coefficient, V represents the pulling speed during the shoulder opening process, V 放0 represents the standard pulling speed during the shoulder opening process, k4 represents the fourth weight coefficient, T represents the single crystal furnace temperature, T0 represents the standard single crystal furnace temperature, and k5 represents the fifth weight coefficient.

[0017] In an alternative embodiment, the sum of the first weight coefficient, the second weight coefficient, the third weight coefficient, the fourth weight coefficient, and the fifth weight coefficient is 1, and the first weight coefficient is greater than the second weight coefficient, the second weight coefficient is greater than the third weight coefficient, the third weight coefficient is greater than the fourth weight coefficient, and the fourth weight coefficient is greater than the fifth weight coefficient.

[0018] In an alternative embodiment, determining the current seeding power of the single crystal furnace according to the previous seeding power of the single crystal furnace and the seeding compensation power includes:

[0019] When the shoulder release time is greater than the standard shoulder release time, the current seeding power is the difference between the previous seeding power and the seeding compensation power;

[0020] When the shoulder release time is not greater than the standard shoulder release time, the current seeding power is the sum of the previous seeding power and the seeding compensation power.

[0021] In an alternative embodiment, the method further includes:

[0022] If it is detected that the proportion of the seeding compensation power in the previous seeding power is not less than a preset proportion threshold, it is determined that the current seeding power is abnormal and the input is stopped, and an alarm signal is sent at the same time.

[0023] In a second aspect, an embodiment of the present application further provides a seeding power regulation system, and the regulation system includes:

[0024] A data acquisition module for acquiring historical operation parameters of the single crystal furnace during the seeding stage;

[0025] A power compensation module for determining the seeding compensation power according to the historical operation parameters and the standard operation parameters corresponding to each historical operation parameter value; the seeding compensation power is determined according to the ratio between each historical operation parameter and the corresponding standard operation parameter; according to the previous seeding power of the single crystal furnace and the seeding compensation power, the current seeding power of the single crystal furnace is determined.

[0026] In an alternative embodiment, the regulation system further includes a human-computer interaction module;

[0027] The human-computer interaction module is used to modify the abnormal current seeding power in response to the user's power modification operation.

[0028] In an alternative embodiment, a screen coordinate system is established on the interface of the regulation system, a power adjustment button is displayed at the first position coordinate, and a parameter confirmation button is displayed at the second position coordinate;

[0029] Execute the RPA instruction sequence, and the RPA instruction sequence includes: simulating the mouse moving to the first position coordinate and clicking, automatically inputting the current seeding power, and triggering the confirmation operation of the second position coordinate.

[0030] In a third aspect, an embodiment of the present application further provides an electronic device, including: a processor, a memory, and a bus, the memory stores machine-readable instructions executable by the processor, when the electronic device runs, the processor communicates with the memory through the bus, and when the machine-readable instructions are executed by the processor, the steps of the seeding power regulation method as described above are executed.

[0031] Fourthly, an embodiment of the present application further provides a computer-readable storage medium, on which a computer program is stored. When the computer program is run by a processor, it executes the steps of the above-mentioned method for regulating the seeding power.

[0032] An embodiment of the present application provides a method and a system for regulating seeding power. The regulation method includes: first, obtaining the historical operation parameters of the single crystal furnace in the seeding stage, and then determining the seeding compensation power according to the historical operation parameters and the standard operation parameters corresponding to each historical operation parameter value. The seeding compensation power is determined according to the ratio between each historical operation parameter and the corresponding standard operation parameter. Finally, according to the previous seeding power and the seeding compensation power of the single crystal furnace, the current seeding power of the single crystal furnace is determined. By obtaining the historical operation parameters of the seeding stage of the single crystal furnace and combining the standard operation parameters to determine the seeding compensation power, and then determining the current seeding power, the present application realizes the dynamic adjustment of the seeding power. The whole process is automated to eliminate human errors, shorten the adjustment time of the seeding power, and not only has high efficiency, but also helps to improve the regulation accuracy of the seeding power.

[0033] To make the above objects, features, and advantages of the present application more obvious and understandable, the following specifically enumerates preferred embodiments and, in conjunction with the accompanying drawings, makes a detailed description as follows. BRIEF DESCRIPTION OF THE DRAWINGS

[0034] To more clearly illustrate the technical solutions of the embodiments of the present application, the following briefly introduces the drawings required to be used in the embodiments. It should be understood that the following drawings only show some embodiments of the present application and should not be regarded as limiting the scope. For those of ordinary skill in the art, other relevant drawings can be obtained based on these drawings without creative efforts.

[0035] Figure 1 It is a flowchart of a method for regulating seeding power provided by an embodiment of the present application;

[0036] Figure 2 It is a flowchart of another method for regulating seeding power provided by an embodiment of the present application;

[0037] Figure 3 It is a schematic structural diagram of a device for regulating seeding power provided by an embodiment of the present application;

[0038] Figure 4 It is a schematic structural diagram of an electronic device provided by an embodiment of the present application. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0039] To make the objectives, technical solutions, and advantages of the embodiments of this application clearer, the technical solutions in the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings in the embodiments of this application. Obviously, the described embodiments are only a part of the embodiments of this application, rather than all the embodiments. Components of the embodiments of this application usually described and illustrated in the accompanying drawings here can be arranged and designed in various different configurations. Therefore, the following detailed description of the embodiments of this application provided in the accompanying drawings is not intended to limit the scope of the claimed application, but merely represents selected embodiments of this application. Based on the embodiments of this application, every other embodiment obtained by those skilled in the art without creative efforts belongs to the scope of protection of this application.

[0040] First, an application scenario applicable to this application is introduced. This application can be applied to the field of single crystal manufacturing technology. Through research, it is found that single crystal silicon, as one of the crucial basic materials in the semiconductor industry, has extremely high requirements for its purity and crystal structure integrity, and its quality directly has a profound impact on the performance of a series of products such as integrated circuits and solar cells. As the core key equipment for preparing single crystal silicon, the power control of the single crystal furnace plays an important role in the quality and efficiency of single crystal growth. In the crystal seeding stage of traditional single crystal furnaces, the adjustment of the crystal seeding power mostly relies on the experience of operators. The operators need to manually record historical parameters, such as the shoulder releasing time, crystal seeding pulling speed, etc., and rely on experience to judge the next crystal seeding power. This method not only has low efficiency but is also easily affected by the subjective factors of operators. Due to the uneven levels of operators, the judged next crystal seeding power is likely to have a large deviation, thereby affecting the crystal quality of single crystal silicon.

[0041] Based on this, the embodiments of this application provide a method for regulating the crystal seeding power, which can automatically determine the current crystal seeding power according to historical operation parameters, not only with high efficiency but also helpful for improving the regulation accuracy of the crystal seeding power.

[0042] Please refer to Figure 1 , Figure 1 which is a flowchart of a method for regulating the crystal seeding power provided by the embodiments of this application. As shown in Figure 1 , the regulation method provided by the embodiments of this application includes:

[0043] S101, obtaining the historical operation parameters of the single crystal furnace in the crystal seeding stage.

[0044] S102, determining the crystal seeding compensation power according to the historical operation parameters and the standard operation parameters corresponding to each historical operation parameter value; the crystal seeding compensation power is determined according to the ratio between each historical operation parameter and the corresponding standard operation parameter.

[0045] S103. Determine the current crystal seeding power of the single crystal furnace according to the previous crystal seeding power and the crystal seeding compensation power of the single crystal furnace.

[0046] In the above steps S101 to S103, by obtaining the historical operation parameters of the single crystal furnace during the crystal seeding stage and combining with the standard operation parameters to determine the crystal seeding compensation power, and then determining the current crystal seeding power, the dynamic adjustment of the crystal seeding power is realized. The full process automation eliminates human errors, shortens the adjustment time of the crystal seeding power, not only has high efficiency, but also helps to improve the control accuracy of the crystal seeding power.

[0047] The above steps S101 to S103 are described in detail as follows:

[0048] In step S101, obtain the historical operation parameters of the single crystal furnace during the crystal seeding stage.

[0049] Here, the historical operation parameters during the crystal seeding stage can be collected from the single crystal furnace through a specific module or specific device. The historical operation parameters reflect various data on the operation status of the single crystal furnace during the crystal seeding stage, such as the crystal seeding temperature drop amplitude, crystal seeding pulling speed, shoulder release time, pulling speed during the shoulder release process, and the temperature of the single crystal furnace.

[0050] Exemplarily, when the single crystal furnace is in the crystal seeding stage, data can be collected from each sensor of the single crystal furnace in real time through a data acquisition module. For example, the data acquisition module obtains historical operation parameters such as the crystal seeding temperature drop amplitude, crystal seeding pulling speed, shoulder release time, pulling speed during the shoulder release process, and the temperature of the single crystal furnace in real time. These parameters are crucial for accurately grasping the operation status of the single crystal furnace. Among them, the crystal seeding temperature drop amplitude reflects the temperature change during the crystal seeding process. The temperature change will affect the crystal growth quality. For example, if the crystal seeding temperature drop amplitude is too large, it may cause unstable crystal growth. If the temperature drop amplitude is too small, it may affect the crystal nucleation process. The crystal seeding pulling speed determines the crystal growth speed. An appropriate pulling speed can ensure uniform crystal growth. The shoulder release time and the pulling speed during the shoulder release process affect the shape and quality of the crystal shoulder. Reasonable shoulder release time and pulling speed can make the crystal shoulder more regular. The temperature of the single crystal furnace is the key factor determining the crystal growth environment. A stable furnace temperature is crucial for uniform crystal growth.

[0051] In an optional embodiment, the historical operation parameters of the single crystal furnace during the crystal seeding stage can be obtained periodically at a certain time interval. For example, the historical operation parameters are collected every 1 minute. This can timely track the change of the operation status of the single crystal furnace. Taking the shoulder release time as an example, during the crystal seeding process, the shoulder release time will change continuously with the progress of the process. By periodically obtaining, the real-time value of the shoulder release time can be accurately recorded for subsequent accurate calculation.

[0052] In practical applications, for the Jingsheng JSH-160 single crystal furnace, the data acquisition module will continuously operate and continuously obtain various historical operating parameters during the crystal seeding stage. After the crystal seeding starts, the data acquisition module will start to record the temperature drop amplitude during crystal seeding. As time goes by, operating parameters such as the crystal seeding pulling speed, shoulder releasing time, pulling speed during the shoulder releasing process, and the temperature of the single crystal furnace will also be successively collected. These operating parameters serve as the basic data for calculating the crystal seeding compensation power subsequently.

[0053] In step S102, based on the historical operating parameters and the standard operating parameters corresponding to each historical operating parameter value, determine the crystal seeding compensation power; the crystal seeding compensation power is determined according to the ratio between each historical operating parameter and the corresponding standard operating parameter.

[0054] Here, the standard operating parameters are pre-set operating parameter values under ideal conditions, used for comparison with the actual operating parameters. The crystal seeding compensation power is to enable the single crystal furnace to work with a more reasonable crystal seeding power, and this compensation value can be calculated based on the difference between the historical operating parameters and the standard operating parameters.

[0055] Exemplarily, when the crystal seeding pulling speed V2 is greater than the standard crystal seeding pulling speed V0, it indicates that the crystal growth speed is relatively fast, and it may be necessary to appropriately adjust the crystal seeding power. The crystal seeding compensation power calculated can be used for subsequent power adjustment.

[0056] In an optional embodiment, the calculation steps for determining the crystal seeding compensation power mainly include: First, calculate the ratio between each historical operating parameter and the corresponding standard operating parameter respectively. For example, calculate the ratio of the shoulder releasing time to the standard shoulder releasing time, the ratio of the crystal seeding pulling speed to the standard crystal seeding pulling speed, etc. These ratios reflect the degree of difference between the actual operating situation and the ideal state; then, assign corresponding weight coefficients to each ratio, and the weight coefficients reflect the importance of each historical operating parameter in determining the crystal seeding compensation power; finally, perform weighted calculation based on these ratios and the corresponding weight coefficients to obtain the crystal seeding compensation power.

[0057] In this way, the influence of multiple historical operating parameters on the crystal seeding power can be comprehensively considered, making the calculation of the crystal seeding compensation power more accurate, and thus obtaining a more precise crystal seeding power.

[0058] Specifically, as Figure 2 shown, step S102 includes:

[0059] S1021. Calculate the first ratio between the shoulder releasing time and the standard shoulder releasing time, the second ratio between the crystal seeding pulling speed and the standard crystal seeding pulling speed, the third ratio between the temperature drop amplitude during crystal seeding and the standard temperature drop amplitude during crystal seeding, the fourth ratio between the pulling speed during the shoulder releasing process and the standard pulling speed during the shoulder releasing process, and the fifth ratio between the temperature of the single crystal furnace and the standard temperature of the single crystal furnace;

[0060] S1022: Assign the first weight coefficient, the second weight coefficient, the third weight coefficient, the fourth weight coefficient, and the fifth weight coefficient to the first ratio, the second ratio, the third ratio, the fourth ratio, and the fifth ratio respectively;

[0061] S1023: Determine the seeding compensation power according to the first ratio and the corresponding first weight coefficient, the second ratio and the corresponding second weight coefficient, the third ratio and the corresponding third weight coefficient, the fourth ratio and the corresponding fourth weight coefficient, and the fifth ratio and the corresponding fifth weight coefficient.

[0062] In the above steps S1021 to S1023, by calculating each ratio, the degree of difference between the actual operating parameters and the standard operating parameters can be intuitively seen. Assigning weight coefficients is to reflect the importance of each historical operating parameter in determining the seeding compensation power. For example, the shoulder opening time has a greater impact on the overall process of crystal growth, and a relatively high weight coefficient may be assigned. Finally, the seeding compensation power is obtained through weighted calculation, making the calculation result more accurately reflect the impact of the actual situation on the seeding power.

[0063] For example, the seeding compensation power is calculated by the following formula:

[0064] P0 = [(t / t0)*k1+(V / V0)*k2+(ΔT / ΔT0)*k3+(V / V 放0 )*k4+(T / T0)*k5];

[0065] Where, P0 represents the seeding compensation power, t represents the shoulder opening time, t0 represents the standard shoulder opening time, k1 represents the first weight coefficient, V represents the seeding pulling speed, V0 represents the standard seeding pulling speed, k2 represents the second weight coefficient, ΔT represents the seeding temperature drop amplitude, ΔT0 represents the standard seeding temperature drop amplitude, k3 represents the third weight coefficient, V represents the pulling speed during the shoulder opening process, V 放0 represents the standard pulling speed during the shoulder opening process, k4 represents the fourth weight coefficient, T represents the temperature of the single crystal furnace, T0 represents the standard temperature of the single crystal furnace, and k5 represents the fifth weight coefficient.

[0066] For example, when the specific parameters are known, such as the shoulder opening time t1 = 5h, the standard shoulder opening time t0 = 4.5h, the first weight coefficient k1 = 0.3, the seeding pulling speed V2 = 320mm / h, the standard seeding pulling speed V 放0 = 300mm / h, the second weight coefficient k2 = 0.25, etc., the value of the seeding compensation power P0 can be calculated by substituting into the above formula.

[0067] In the above step S1022, the sum of the first weight coefficient, the second weight coefficient, the third weight coefficient, the fourth weight coefficient, and the fifth weight coefficient is 1, and the first weight coefficient is greater than the second weight coefficient, the second weight coefficient is greater than the third weight coefficient, the third weight coefficient is greater than the fourth weight coefficient, and the fourth weight coefficient is greater than the fifth weight coefficient.

[0068] Here, the value range of the weight coefficient is 0 ≤ k ≤ 1, and the sum of all weight coefficients is 1. The operator can configure the weight coefficients according to the actual process requirements. Since the shoulder opening time has the greatest impact on the overall process of crystal growth, the first weight coefficient is the largest; the impact of the seeding pulling speed is the second, so the second weight coefficient is the second, and so on. For example, the operator may configure the first weight coefficient k1 = 0.3, the second weight coefficient k2 = 0.25, the third weight coefficient k3 = 0.2, the fourth weight coefficient k4 = 0.15, and the fifth weight coefficient k5 = 0.1. Such a configuration can make the calculation of the seeding compensation power more reasonably reflect the importance of each operating parameter to the seeding power.

[0069] Further, assuming that the standard shoulder opening time t0 = 4.5h, the actual shoulder opening time t1 = 5h, and the weight coefficient k1 corresponding to the shoulder opening time is 0.3, then the contribution of the parameter of the shoulder opening time to the seeding compensation power is (t1 / t0)*k1.

[0070] In step S103, based on the previous seeding power of the single crystal furnace and the seeding compensation power, determine the current seeding power of the single crystal furnace.

[0071] Here, the previous seeding power refers to the power value used by the single crystal furnace during the previous seeding process. Combining the previous seeding power and the seeding compensation power, the current seeding power, that is, the power value that should be used for this seeding, can be obtained through the above formula.

[0072] Specifically, step S103 includes:

[0073] When the shoulder opening time is greater than the standard shoulder opening time, the current seeding power is the difference between the previous seeding power and the seeding compensation power;

[0074] When the shoulder opening time is not greater than the standard shoulder opening time, the current seeding power is the sum of the previous seeding power and the seeding compensation power.

[0075] Here, assuming that the previous seeding power is P last , when the shoulder opening time t1 is greater than the standard shoulder opening time t0, the current seeding power P next = P last - P0; when the shoulder opening time t1 is not greater than the standard shoulder opening time t0, the current seeding power P next = P last + P0.

[0076] In one embodiment, when the shoulder forming time is greater than the standard shoulder forming time, it indicates that the actual shoulder forming process takes longer than the ideal state, and it may be necessary to reduce the seeding power. At this time, the current seeding power is the difference between the previous seeding power and the seeding compensation power. For example, the previous seeding power P last = 1000W, the seeding compensation power P0 = 50W, the shoulder forming time t1 = 5h, which is greater than the standard shoulder forming time t0 = 4.5h. Then, the current seeding power P next = P last - P0 = 950W. In this way, by adjusting the seeding power, the shoulder forming process can be made more in line with the ideal state, thereby improving the quality of crystal growth.

[0077] In another embodiment, when the shoulder forming time is not greater than the standard shoulder forming time, it indicates that the actual shoulder forming process is within the ideal time range, and it may be necessary to appropriately increase the seeding power. At this time, the current seeding power is the sum of the previous seeding power and the seeding compensation power. For example, the previous seeding power P last = 1000W, the seeding compensation power P0 = 30W, the shoulder forming time t1 = 4h, which is less than the standard shoulder forming time t0 = 4.5h. Then, the current seeding power P next = P last + P0 = 1030W.

[0078] In practical applications, for the Jingsheng JSH-160 single crystal furnace, after each seeding is completed, the previous seeding power is recorded. When entering the next seeding stage, after calculating the seeding compensation power, according to the comparison result of the shoulder forming time and the standard shoulder forming time, the current seeding power is determined according to the above formula. In this way, the seeding power can be dynamically adjusted according to the actual operation of the single crystal furnace, ensuring the stability and quality of crystal growth.

[0079] In an alternative embodiment, the regulation method provided by the embodiments of the present application further includes:

[0080] If it is detected that the proportion of the seeding compensation power in the previous seeding power is not less than the preset proportion threshold, it is determined that the current seeding power is abnormal and the input is stopped, and at the same time an alarm signal is sent.

[0081] Here, the regulation system will monitor the proportion of the seeding compensation power in the previous seeding power in real time. Assuming that the preset proportion threshold is 3%, when the calculated seeding compensation power P0 = 50W and the previous seeding power P last = 1000W, the proportion of the seeding compensation power is 5%, which is not less than the preset proportion threshold. At this time, the regulation system will determine that the current seeding power is abnormal, stop the input of the seeding power, and send an alarm signal to the MES system to remind the operator to handle it, avoiding inputting abnormal seeding power and affecting the growth quality of the crystal.

[0082] In practical applications, by using the seed crystal power regulation method in the embodiments of the present application, it is possible to achieve full-process automation to eliminate human errors. The embodiments show that the fluctuation range of the shoulder release time can be reduced from 0.4 h to within 0.2 h; through the multi-parameter dynamic compensation mechanism, the time taken for seed crystal power adjustment can be shortened from 1 minute to 8 seconds; an abnormal detection mechanism is set up, and through the 3% threshold protection, misoperations in about 17% of abnormal working conditions can be effectively avoided. The above solutions not only have high efficiency but also help to improve the regulation accuracy of the seed crystal power.

[0083] In a second aspect, an embodiment of the present application provides a regulation system for seed crystal power, as Figure 3 shown. The regulation system 300 includes:

[0084] A data acquisition module 301, configured to obtain historical operation parameters of the single crystal furnace during the seed crystal stage;

[0085] A power compensation module 302, configured to determine the seed crystal compensation power according to the historical operation parameters and the standard operation parameters corresponding to each historical operation parameter value; the seed crystal compensation power is determined according to the ratio between each historical operation parameter and the corresponding standard operation parameter; according to the previous seed crystal power of the single crystal furnace and the seed crystal compensation power, determine the current seed crystal power of the single crystal furnace.

[0086] Here, each module of the regulation system works in cooperation. Exemplarily, the data acquisition module real-time obtains historical operation parameters of the Jingsheng JSH-160 type single crystal furnace during the seed crystal stage, such as the seed crystal temperature drop amplitude and the seed crystal drawing speed. The power compensation module calculates the seed crystal compensation power according to these historical operation parameters and the standard operation parameters, and determines the current seed crystal power in combination with the previous seed crystal power. For example, the data acquisition module transmits the collected historical operation parameters to the power compensation module, and the power compensation module calculates to obtain the current seed crystal power and uses the result for subsequent power adjustment.

[0087] Optionally, the regulation system 300 further includes a human-machine interaction module (not shown in the figure); the human-machine interaction module is configured to modify the abnormal current seed crystal power in response to a user's power modification operation. When the system detects that the current seed crystal power is abnormal, the operator can modify the abnormal current seed crystal power through the human-machine interaction module. For example, when the proportion of the seed crystal compensation power in the previous seed crystal power exceeds a preset proportion threshold, after the system determines that the current seed crystal power is abnormal and stops power input, the operator can view relevant information and manually input a suitable seed crystal power according to the actual situation to ensure the normal operation of the single crystal furnace.

[0088] Further, a screen coordinate system is established on the interface of the control system. A power adjustment button is displayed at the first position coordinate, and a parameter confirmation button is displayed at the second position coordinate.

[0089] The control system executes an RPA instruction sequence, which includes: simulating the mouse to move to the first position coordinate and click, automatically inputting the current ingot pulling power, and triggering the confirmation operation at the second position coordinate. In practical applications, the origin of the interface of the control system is at the upper left corner (0, 0), and the resolution is 1920×1080. The power adjustment button is located at (320, 650), and the parameter confirmation button is located at (1450, 820). When the power compensation module determines the current ingot pulling power, the system will execute the RPA instruction sequence. First, simulate the mouse to move to the position (320, 650) and click the power adjustment button, then automatically input the current ingot pulling power (retaining 1 decimal place), and finally trigger the parameter confirmation button at the position (1450, 820) to complete the power adjustment operation.

[0090] The embodiment of the present application realizes the compatibility of cross-version control systems through coordinate mapping accurate to 1 pixel and automated operations, improving the accuracy and efficiency of operations.

[0091] Please refer to Figure 4 , Figure 4 which is a schematic structural diagram of an electronic device provided by the embodiment of the present application. As Figure 4 shown in

[0092] the electronic device 400 includes a processor 401, a memory 402, and a bus 403. Figure 1 The memory 402 stores machine-readable instructions executable by the processor 401. When the electronic device 400 runs, the processor 401 communicates with the memory 402 through the bus 403. When the machine-readable instructions are executed by the processor 401, the steps of the control method in the method embodiment as described above can be executed. The specific implementation manner can refer to the method embodiment and will not be elaborated here.

[0093] The embodiment of the present application also provides a computer-readable storage medium. A computer program is stored on the computer-readable storage medium. When the computer program is run by a processor, the steps of the control method in the method embodiment as described above can be executed. The specific implementation manner can refer to the method embodiment and will not be elaborated here. Figure 1 shown in

[0094] Those skilled in the art can clearly understand that for the convenience and brevity of description, the specific working processes of the above-described systems, devices, and units can refer to the corresponding processes in the foregoing method embodiments and will not be elaborated here.

[0095] In several embodiments provided in this application, it should be understood that the disclosed systems, devices, and methods can be implemented in other ways. The device embodiments described above are merely illustrative. For example, the division of the units is only a logical function division. In actual implementation, there may be other division methods. For another example, multiple units or components can be combined or integrated into another system, or some features can be ignored or not executed. Another point is that the displayed or discussed couplings or direct couplings or communication connections between each other can be through some communication interfaces. The indirect couplings or communication connections of the devices or units can be in electrical, mechanical, or other forms.

[0096] The units described as separate components may or may not be physically separated. The components displayed as units may or may not be physical units, that is, they can be located in one place or distributed to multiple network units. Some or all of the units can be selected according to actual needs to achieve the purpose of the solution of this embodiment.

[0097] In addition, in each embodiment of this application, the functional units can be integrated in a processing unit, or each unit can exist physically alone, or two or more units can be integrated in one unit.

[0098] If the function is implemented in the form of a software functional unit and sold or used as an independent product, it can be stored in a non-volatile computer-readable storage medium executable by a processor. Based on such an understanding, the technical solution of this application, in essence, or the part that contributes to the prior art, or a part of this technical solution, can be embodied in the form of a software product. This computer software product is stored in a storage medium and includes several instructions to enable a computer device (which can be a personal computer, a server, or a network device, etc.) to execute all or part of the steps of the methods described in each embodiment of this application. The foregoing storage medium includes: various media such as USB flash drives, mobile hard disks, read-only memories (ROM), random access memories (RAM), magnetic disks, or optical discs that can store program codes.

[0099] Finally, it should be noted that the above-described embodiments are only specific implementation manners of the present application, used to illustrate the technical solutions of the present application, rather than limiting it. The protection scope of the present application is not limited thereto. Although the present application has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that any person skilled in the art within the technical scope disclosed by the present application can still modify the technical solutions recorded in the foregoing embodiments or can easily think of changes, or perform equivalent replacements on some of the technical features; and these modifications, changes or replacements do not make the essence of the corresponding technical solutions deviate from the spirit and scope of the technical solutions of the embodiments of the present application, and should all be covered within the protection scope of the present application. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims.

Claims

1. A method for regulating the seeding power, characterized in that, The control method includes: Obtaining the historical operation parameters of the single crystal furnace during the crystal seeding stage; Determining the crystal seeding compensation power according to the historical operation parameters and the standard operation parameters corresponding to each historical operation parameter value; the crystal seeding compensation power is determined according to the ratio between each historical operation parameter and the corresponding standard operation parameter; Determining the current crystal seeding power of the single crystal furnace according to the last crystal seeding power of the single crystal furnace and the crystal seeding compensation power.

2. The regulation method according to claim 1, characterized in that The historical operation parameters include the crystal seeding temperature drop amplitude, the crystal seeding pulling speed, the shoulder releasing time, the pulling speed during the shoulder releasing process, and the temperature of the single crystal furnace.

3. The regulation method according to claim 2, wherein The determining the crystal seeding compensation power according to the historical operation parameters and the standard operation parameters corresponding to each historical operation parameter value includes: Calculating a first ratio between the shoulder releasing time and the standard shoulder releasing time, a second ratio between the crystal seeding pulling speed and the standard crystal seeding pulling speed, a third ratio between the crystal seeding temperature drop amplitude and the standard crystal seeding temperature drop amplitude, a fourth ratio between the pulling speed during the shoulder releasing process and the standard pulling speed during the shoulder releasing process, and a fifth ratio between the temperature of the single crystal furnace and the standard temperature of the single crystal furnace; Assigning a first weight coefficient, a second weight coefficient, a third weight coefficient, a fourth weight coefficient, and a fifth weight coefficient to the first ratio, the second ratio, the third ratio, the fourth ratio, and the fifth ratio respectively; Determining the crystal seeding compensation power according to the first ratio and the corresponding first weight coefficient, the second ratio and the corresponding second weight coefficient, the third ratio and the corresponding third weight coefficient, the fourth ratio and the corresponding fourth weight coefficient, and the fifth ratio and the corresponding fifth weight coefficient.

4. The regulation method according to claim 3, characterized in that, Calculating the crystal seeding compensation power through the following formula: P0 = [(t / t0)*k + (V / V0)*k + (ΔT / ΔT0)*k + (V / V 放0 )*k + (T / T0)*k5]; Among them, P0 represents the seeding compensation power, t represents the shoulder opening time, t0 represents the standard shoulder opening time, k represents the first weight coefficient, V represents the seeding pulling speed, V0 represents the standard seeding pulling speed, k2 represents the second weight coefficient, ΔT represents the seeding temperature drop amplitude, ΔT0 represents the standard seeding temperature drop amplitude, k3 represents the third weight coefficient, V represents the pulling speed during the shoulder opening process, V 放0 represents the standard pulling speed during the shoulder opening process, k4 represents the fourth weight coefficient, T represents the single crystal furnace temperature, T0 represents the standard temperature of the single crystal furnace, and k5 represents the fifth weight coefficient.

5. The regulation method according to claim 3, characterized in that The sum of the first weight coefficient, the second weight coefficient, the third weight coefficient, the fourth weight coefficient, and the fifth weight coefficient is 1, and the first weight coefficient is greater than the second weight coefficient, the second weight coefficient is greater than the third weight coefficient, the third weight coefficient is greater than the fourth weight coefficient, and the fourth weight coefficient is greater than the fifth weight coefficient.

6. The regulation method according to claim 3, characterized in that The determining the current crystal seeding power of the single crystal furnace according to the last crystal seeding power of the single crystal furnace and the crystal seeding compensation power includes: When the shoulder releasing time is greater than the standard shoulder releasing time, the current crystal seeding power is the difference between the last crystal seeding power and the crystal seeding compensation power; When the shoulder releasing time is not greater than the standard shoulder releasing time, the current crystal seeding power is the sum of the last crystal seeding power and the crystal seeding compensation power.

7. The regulation method according to claim 1, wherein The method further includes: If it is detected that the proportion of the crystal seeding compensation power in the last crystal seeding power is not less than a preset proportion threshold, it is determined that the current crystal seeding power is abnormal and the input is stopped, and an alarm signal is sent at the same time.

8. A control system for seeding power, characterized in that The control system includes: A data acquisition module for obtaining the historical operation parameters of the single crystal furnace during the crystal seeding stage; A power compensation module is used to determine the seeding compensation power according to the historical operation parameters and the standard operation parameters corresponding to each historical operation parameter value; the seeding compensation power is determined according to the ratio between each historical operation parameter and the corresponding standard operation parameter; according to the last seeding power of the single crystal furnace and the seeding compensation power, the current seeding power of the single crystal furnace is determined.

9. The regulation system according to claim 8, wherein The control system further includes a human-computer interaction module; The human-computer interaction module is used to modify the abnormal current seeding power in response to the user's power modification operation.

10. The regulation system according to claim 9, characterized in that, A screen coordinate system is established on the interface of the control system. A power adjustment button is displayed at the first position coordinate, and a parameter confirmation button is displayed at the second position coordinate; Execute the RPA instruction sequence, and the RPA instruction sequence includes: simulating the mouse to move to the first position coordinate and click, automatically inputting the current seeding power, and triggering the confirmation operation of the second position coordinate.

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