Voltage test method and system for power device

Abstract

The invention relates to the technical field of power device voltage testing, and discloses a voltage testing method and system for a power device. The voltage testing method is applied to threshold voltage testing equipment and specifically comprises the following steps that S101, threshold voltage testing information transmitted by an upper computer is received, the testing information comprises the current threshold voltage of a device to be tested, the reverse voltage bias state of the device to be tested is switched, and the current threshold voltage of the device to be tested is switched to the reverse voltage bias state of the device to be tested; the bias voltage stress data of the to-be-tested device for a set time length are acquired; s102, acquiring reverse voltage bias state information for switching the to-be-tested device; the device to be tested is effectively protected, the threshold voltage data of the device to be tested are compared with the threshold voltage data of the device to be tested after bearing the bias voltage stress, whether the difference value is within the threshold range preset by the system or not is judged, the qualification of the device to be tested is determined, the voltage threshold data measured before and after are accurate, and the accuracy of the device to be tested is improved. The comparison error is obvious, and the qualification of the to-be-tested device is easy to identify.

Description

Technical Field

[0001] The present invention relates to the technical field of power device voltage testing. Specifically, it relates to a voltage testing method and system for power devices. Background Art

[0002] The threshold voltage of a power device is a major performance index for evaluating the device, an important index for characterizing the dynamic characteristics of conduction and turn-off, and a characterization for evaluating device design and process; especially after reverse bias stress or gate voltage stress is applied, a rapid threshold voltage test can more accurately evaluate the device characteristics.

[0003] The prior art is to reverse bias the device or apply gate voltage bias, and then transfer the device to a dedicated threshold voltage test circuit for testing. During the transfer process, the withdrawal of stress will cause the threshold voltage to gradually recover over time, and thus the drift amount of the threshold voltage after stress cannot be accurately evaluated, resulting in a large parameter error in accurately evaluating the device characteristics. Summary of the Invention

[0004] The purpose of the present invention is to provide a voltage testing method and system for power devices to determine the qualification of a device to be tested, making the measured voltage threshold data accurate before and after, with an obvious comparison error, and being easy to identify the qualification of the device to be tested, aiming to solve the problem in the prior art that the withdrawal of stress will cause the threshold voltage to gradually recover over time, and thus the drift amount of the threshold voltage after stress cannot be accurately evaluated.

[0005] The present invention is implemented as follows. A voltage testing method for power devices, applied to a threshold voltage testing device, specifically includes the following steps:

[0006] S101: Receive the test information of the threshold voltage sent by the host computer. The test information includes the threshold voltage of the current device to be tested, switching the reverse voltage bias state of the device to be tested, and the bias voltage stress data of the device to be tested for a set duration.

[0007] S102: Obtain the information on switching the reverse voltage bias state of the device to be tested. After the threshold voltage data of the current device to be tested is generated, send a change signal to the test device, and the test device sends the change signal to the execution unit.

[0008] S103: After the execution unit completes the command for reverse voltage biasing of the device to be tested, trigger the completion of the reverse voltage biasing path, and obtain the bias voltage stress data of the device to be tested for a set duration. Generate a corresponding reverse bias voltage constraint force according to the bias voltage stress data, and perform overcurrent monitoring and protection on the reverse voltage biasing path current in real time.

[0009] S104: After completing the reverse voltage bias path for a preset time, perform a reverse voltage bias disconnection, and then test the threshold voltage of the device under test again after it has withstood the bias voltage stress.

[0010] S105: Obtain the threshold voltage data of the device under test currently, and compare it with the threshold voltage data of the device under test after it has withstood the bias voltage stress, and determine whether the difference value is within the threshold range preset by the system to determine the qualification of the device under test.

[0011] Further, in S101, receive the test information of the threshold voltage sent by the host computer, including:

[0012] Receive the connection request sent by the host computer through a preset network, and the connection request is used to request to establish a connection with the test device;

[0013] Detect whether the current terminal account of the host computer is the identified target account;

[0014] If the current terminal account of the host computer is the identified target account, connect to the host computer according to the connection request, and after the connection is completed, receive the test information of the threshold voltage sent by the host computer.

[0015] Further, the preset network includes one or a combination of 3G network, 4G network, 5G network, and WIFI network.

[0016] Further, in S102, after the threshold voltage data of the device under test currently is generated, send a change signal to the test device, and the test device sends the change signal to the execution unit, including:

[0017] Obtain multiple current voltage signals fed back by the device under test within a preset time, and input the multiple current voltage signals into a preset content text recognition model;

[0018] Obtain the text recognition result output by the text recognition model based on the current voltage signal, and in the text recognition result, obtain the voltage value of the current voltage signal;

[0019] Compare the voltage value of the obtained current voltage signal with the previously set voltage threshold of the system, and determine whether the voltage value of the recognized current voltage signal is the threshold voltage of the current device under test. If it is determined to be the threshold voltage of the current device under test, send a change signal to the test device.

[0020] Further, obtaining the text recognition result output by the text recognition model based on the current voltage signal includes:

[0021] Acquire multiple text recognition models, and sort the data recognition thresholds of the multiple text recognition models in ascending order;

[0022] The voltage values ​​of the multiple current voltage signals are obtained, and the voltage values ​​of the current voltage signals are input into the text recognition model ranked first.

[0023] Further, the voltage value of the current voltage signal obtained is compared with the previous voltage threshold preset by the system to determine whether the voltage value of the current voltage signal identified is the threshold voltage of the current device under test, including:

[0024] Acquire multiple voltage values ​​of current voltage signals identified based on the text recognition model, and sort the voltage values ​​of the current voltage signals from small to large;

[0025] Establish a two-dimensional data association curve, set the horizontal axis as the preset time period, the vertical axis as the current voltage value, and complete the association of all voltage value points within the preset time;

[0026] Based on the acquired two-dimensional data correlation curve, the curvature change data of the curve in each stage is determined. If the curvature change within the stage preset time is determined to be constant, the voltage value within the preset time is determined to be the threshold voltage of the current device under test.

[0027] Furthermore, in S103, a corresponding reverse bias voltage constraint force is generated according to the bias voltage stress data, and overcurrent monitoring and protection is performed on the reverse voltage bias path current in real time, including:

[0028] Acquire multiple reverse voltage bias voltages fed back by the device under test within a preset time, and input the multiple reverse voltage bias voltages into a preset content text recognition model;

[0029] Obtaining a text recognition result of the text recognition model based on the reverse voltage bias voltage output, and obtaining a voltage value of the reverse voltage bias voltage in the text recognition result;

[0030] Obtaining a voltage value of a reverse bias voltage, and establishing a reverse bias voltage constraint model according to the maximum limited bias voltage stress data of the device under test;

[0031] According to the voltage value of the reverse voltage bias voltage, the reverse bias voltage constraint model is triggered to establish the corresponding reverse bias voltage constraint force, thereby completing the overcurrent monitoring protection of the reverse voltage bias path current.

[0032] Further, after the reverse voltage bias path of the preset time is completed, the reverse voltage bias circuit is disconnected, including:

[0033] Obtain multiple reverse bias voltages fed back by the device under test within a preset time, and input the multiple reverse bias voltages into a preset content text recognition model;

[0034] Obtain the text recognition result output by the text recognition model based on the reverse bias voltage. In the text recognition result, obtain the voltage value of the reverse bias voltage;

[0035] Compare the obtained voltage value of the reverse bias voltage with the reverse bias voltage threshold preset by the system to determine whether the voltage value of the recognized reverse bias voltage is close to the reverse bias voltage threshold preset by the system. If the difference is large, re-perform the reverse bias voltage test.

[0036] Compared with the prior art, a voltage test method and system for a power device provided by the present invention have the following beneficial effects:

[0037] 1. By generating a corresponding reverse bias voltage binding force according to the bias voltage stress data, overcurrent monitoring and protection of the reverse voltage bias path current are carried out in real time, so that the device under test can receive the bias voltage stress in a short time, and the set bias voltage stress is within the threshold of the reverse voltage bias state to ensure that the bias voltage stress borne by the device under test will not be overloaded. The device under test is effectively protected. After the bias voltage stress is completed, the reverse voltage bias is opened, and then the threshold voltage of the device under test after bearing the bias voltage stress is tested again. Finally, the threshold voltage data of the device under test is compared with the threshold voltage data of the device under test after bearing the bias voltage stress to determine whether the difference value is within the threshold range preset by the system, and the qualification of the device under test is determined, resulting in accurate voltage threshold data for the front and back measurements, obvious comparison errors, and easy identification of the qualification of the device under test;

[0038] 2. Realize the functions of reverse bias and fast switching threshold test integrated in the same circuit, protect the gate in real time during the application of the bias voltage, and the overcurrent monitoring and protection are carried out after the reverse voltage bias path is completed, avoiding premature damage to the gate caused by the binding force, and realizing both fast threshold testing and gate protection.

[0039] A voltage test system for a power device is used to execute the above voltage test method. The voltage test system includes:

[0040] An acquisition module for receiving the test information of the threshold voltage transmitted by the host computer;

[0041] A first test module for obtaining the reverse voltage bias state information of the device under test to be switched;

[0042] A bias conversion module, for triggering the completion of a reverse voltage bias path after completing a reverse voltage bias command for the device under test, and obtaining bias voltage stress data for the device under test subjected to a set time period;

[0043] A constraint module is used to generate a corresponding reverse bias voltage constraint force according to the bias voltage stress data, and to perform overcurrent monitoring and protection on the reverse voltage bias path current in real time;

[0044] A second test module is used to perform reverse voltage bias disconnection and then retest the threshold voltage of the device under test after being subjected to bias voltage stress;

[0045] The output module is used to obtain the threshold voltage data of the device under test at present, and compare it with the threshold voltage data of the device under test after being subjected to bias voltage stress, to determine whether the phase difference value is within a threshold range preset by the system.

[0046] Specifically, the bias conversion module includes:

[0047] An identification unit, used to identify the threshold voltage data generation of the device under test;

[0048] An execution unit, used for receiving a change signal and completing a command for reverse voltage biasing of the device under test;

[0049] A bias test unit, used for triggering and completing a reverse voltage bias path, and obtaining bias voltage stress data of the device under test subjected to a set time period;

[0050] The stress output unit is used to generate bias voltage stress according to the bias voltage stress data. BRIEF DESCRIPTION OF THE DRAWINGS

[0051] Figure 1 A schematic flow chart of a voltage testing method for a power device proposed by the present invention;

[0052] Figure 2 A schematic block diagram of the process of receiving threshold voltage test information transmitted by a host computer in a voltage test method for a power device proposed by the present invention;

[0053] Figure 3 A schematic diagram of the structure of a voltage test system for a power device proposed by the present invention;

[0054] Figure 4 The present invention provides a schematic structural diagram of a bias conversion module in a voltage test system for a power device. DETAILED DESCRIPTION

[0055] In order to make the objectives, technical solutions and advantages of the present invention more clear and understandable, the present invention will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not used to limit the present invention.

[0056] The implementation of the present invention will be described in detail below with reference to specific embodiments.

[0057] In the accompanying drawings of this embodiment, the same or similar reference numerals correspond to the same or similar components; in the description of the present invention, it should be understood that if there are terms such as "upper", "lower", "left", "right", etc. indicating the orientation or positional relationship, they are based on the orientation or positional relationship shown in the accompanying drawings. This is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation. Therefore, the terms describing the positional relationship in the accompanying drawings are only for illustrative purposes and cannot be construed as a limitation of the present invention. For those of ordinary skill in the art, the specific meanings of the above terms can be understood according to specific circumstances.

[0058] Referring to Figure 1-2 As shown, a voltage test method for a power device, which is applied to a threshold voltage test device, specifically includes the following steps:

[0059] S101: Receive the test information of the threshold voltage transmitted by the host computer. The test information includes the threshold voltage of the currently tested device, switch the reverse voltage bias state of the tested device, and the bias voltage stress data that the tested device withstands for a set duration;

[0060] Among them, receiving the test information of the threshold voltage transmitted by the host computer includes:

[0061] Receive the connection request sent by the host computer through a preset network. The connection request is used to request to establish a connection with the test device;

[0062] Detect whether the current terminal account of the host computer is the identified target account;

[0063] If the current terminal account of the host computer is the identified target account, connect to the host computer according to the connection request. After the connection is completed, receive the test information of the threshold voltage transmitted by the host computer;

[0064] S102: Obtain the information on switching the reverse voltage bias state of the tested device. After the threshold voltage data of the currently tested device is generated, send a change signal to the test device, and the test device sends the change signal to the execution unit;

[0065] Among them, after the threshold voltage data of the currently tested device is generated, sending a change signal to the test device, and the test device sending the change signal to the execution unit includes:

[0066] Obtain multiple current voltage signals fed back by the device under test within a preset time, and input the multiple current voltage signals into a preset content text recognition model;

[0067] Obtain the text recognition result output by the text recognition model based on the current voltage signal. In the text recognition result, obtain the voltage value of the current voltage signal;

[0068] Compare the obtained voltage value of the current voltage signal with the previously set voltage threshold of the system, and determine whether the voltage value of the recognized current voltage signal is the threshold voltage of the current device under test. If it is determined to be the threshold voltage of the current device under test, send a change signal to the test equipment;

[0069] Specifically, comparing the obtained voltage value of the current voltage signal with the previously set voltage threshold of the system, and determining whether the voltage value of the recognized current voltage signal is the threshold voltage of the current device under test includes:

[0070] Obtain the voltage values of multiple current voltage signals recognized based on the text recognition model, and sort the voltage values of the current voltage signals from smallest to largest;

[0071] Establish a two-dimensional data correlation curve, set the abscissa as the preset time period, the ordinate as the current voltage value, and complete the correlation of all voltage value points within the preset time;

[0072] Based on the obtained two-dimensional data correlation curve, judge the curvature change data of the curve in each stage. If it is determined that the curvature change within the preset time period of the stage is constant, determine that the voltage value within the preset time is the threshold voltage of the current device under test;

[0073] S103: After the execution unit completes the command of applying reverse voltage bias to the device under test, trigger the completion of the reverse voltage bias path, and obtain the bias voltage stress data of the device under test for a set duration. Generate a corresponding reverse bias voltage binding force according to the bias voltage stress data, and perform overcurrent monitoring and protection on the reverse voltage bias path current in real time;

[0074] Among them, generating a corresponding reverse bias voltage binding force according to the bias voltage stress data and performing overcurrent monitoring and protection on the reverse voltage bias path current in real time includes:

[0075] Obtain multiple reverse voltage bias voltages fed back by the device under test within a preset time, and input the multiple reverse voltage bias voltages into a preset content text recognition model;

[0076] Obtain the text recognition result output by the text recognition model based on the reverse voltage bias voltage. In the text recognition result, obtain the voltage value of the reverse voltage bias voltage;

[0077] Obtain the voltage value of the reverse voltage bias voltage, and establish a reverse bias voltage constraint model according to the maximum defined bias voltage stress data of the device under test;

[0078] According to the voltage value of the reverse voltage bias voltage, trigger the reverse bias voltage constraint model to establish a corresponding reverse bias voltage binding force, and complete the overcurrent monitoring protection of the reverse voltage bias path current;

[0079] S104: After completing the reverse voltage bias path for a preset time, perform a reverse voltage bias open circuit, and then test the threshold voltage of the device under test again after it withstands the bias voltage stress;

[0080] S105: Obtain the threshold voltage data of the current device under test, and compare it with the threshold voltage data of the device under test after it withstands the bias voltage stress to determine whether the difference value is within the threshold range preset by the system, and determine the qualification of the device under test. This technical solution realizes the integrated implementation of reverse bias and fast switching threshold test functions in the same circuit, protects the gate in real time during the application of the bias voltage, and the overcurrent monitoring protection is realized after the reverse voltage bias path is completed, avoiding premature damage to the gate caused by the binding force, and realizing both fast threshold testing and gate protection.

[0081] In this embodiment, the preset network includes one or a combination of 3G network, 4G network, 5G network, and WIFI network.

[0082] In S102 of this embodiment, obtaining the text recognition result output by the text recognition model based on the current voltage signal includes:

[0083] Obtain multiple text recognition models, and sort the data recognition thresholds of the multiple text recognition models in ascending order;

[0084] Obtain the voltage values of multiple current voltage signals, and input the voltage values of the current voltage signals into the text recognition model ranked first.

[0085] In this embodiment, after completing the reverse voltage bias path for a preset time, performing a reverse voltage bias open circuit includes:

[0086] Obtain multiple reverse bias voltages fed back by the device under test within the preset time, and input the multiple reverse bias voltages into the preset content text recognition model;

[0087] Obtain the text recognition result output by the text recognition model based on the reverse bias voltage, and in the text recognition result, obtain the voltage value of the reverse bias voltage;

[0088] Compare the voltage value of the obtained reverse bias voltage with the reverse bias voltage threshold preset by the system to determine whether the voltage value of the identified reverse bias voltage is close to the reverse bias voltage threshold preset by the system. If the difference is large, re-perform the reverse bias voltage test. Generate a corresponding reverse bias voltage binding force according to the bias voltage stress data, and monitor and protect the overcurrent of the reverse voltage bias path current in real time. This can ensure that the device under test can receive the bias voltage stress in a short time, and the set bias voltage stress is within the threshold of the reverse voltage bias state, so as to ensure that the bias voltage stress borne by the device under test will not be overloaded, effectively protecting the device under test.

[0089] After this technical solution completes receiving the bias voltage stress, perform a reverse voltage bias open circuit. Then, test the threshold voltage of the device under test again after it has withstood the bias voltage stress. Finally, compare the threshold voltage data of the device under test with the threshold voltage data of the device under test after it has withstood the bias voltage stress to determine whether the difference value is within the threshold range preset by the system, and determine the qualification of the device under test, resulting in accurate voltage threshold data for the front and back measurements, obvious comparison errors, and easy identification of the qualification of the device under test.

[0090] Refer to Figure 3-4 As shown, a voltage test system for a power device is used to execute the above voltage test method. The voltage test system includes: an acquisition module for receiving the test information of the threshold voltage transmitted by the host computer; a first test module for acquiring the reverse voltage bias state information of the device under test to be switched; a bias conversion module for triggering the completion of the reverse voltage bias path after completing the command for the reverse voltage bias of the device under test and acquiring the bias voltage stress data of the device under test for a set duration; a constraint module for generating a corresponding reverse bias voltage binding force according to the bias voltage stress data and monitoring and protecting the overcurrent of the reverse voltage bias path current in real time; a second test module for performing a reverse voltage bias open circuit and then testing the threshold voltage of the device under test again after it has withstood the bias voltage stress; an output module for acquiring the threshold voltage data of the current device under test and comparing it with the threshold voltage data of the device under test after it has withstood the bias voltage stress to determine whether the difference value is within the threshold range preset by the system. Generate a corresponding reverse bias voltage binding force according to the bias voltage stress data, and monitor and protect the overcurrent of the reverse voltage bias path current in real time. This can ensure that the device under test can receive the bias voltage stress in a short time, and the set bias voltage stress is within the threshold of the reverse voltage bias state, so as to ensure that the bias voltage stress borne by the device under test will not be overloaded, effectively protecting the device under test.

[0091] The technical solution performs reverse voltage bias disconnection after the bias voltage stress is completed, and then tests the threshold voltage of the device under test again after the bias voltage stress is received. Finally, the threshold voltage data of the device under test is compared with the threshold voltage data of the device under test after the bias voltage stress is received, and it is judged whether the phase difference value is within the threshold range preset by the system, and the qualification of the device under test is determined, so that the voltage threshold data measured before and after are accurate, the comparison error is obvious, and the qualification of the device under test is easy to identify;

[0092] In this embodiment, the bias conversion module includes: an identification unit, which is used to identify the threshold voltage data generation of the current device under test; an execution unit, which is used to receive a change signal and complete the reverse voltage bias command of the device under test; a bias test unit, which is used to trigger the completion of the reverse voltage bias path and obtain the bias voltage stress data of the device under test for a set time; a stress output unit, which is used to generate bias voltage stress according to the bias voltage stress data, so as to realize the reverse bias and fast switching threshold test functions in the same circuit in an integrated manner, and protect the gate in real time during the bias voltage application process, and the overcurrent monitoring protection is realized after the reverse voltage bias path is completed, so as to avoid damage to the gate caused by the constraint force too early, so as to realize both rapid threshold testing and protection of the gate.

[0093] In this embodiment, the entire operation process can be controlled by a computer to provide signal feedback to implement the steps in sequence. These are all common knowledge of signal control and will not be described in detail in this embodiment.

[0094] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present invention should be included in the protection scope of the present invention.

Claims

1. A voltage testing method for a power device, characterized in that, Applied to a threshold voltage test device, specifically including the following steps: S101: Receive the test information of the threshold voltage transmitted by the host computer. The test information includes the threshold voltage of the currently tested device, switching the reverse voltage bias state of the tested device, and the bias voltage stress data of the tested device under a set duration of bias voltage; S102: Obtain the information on switching the reverse voltage bias state of the tested device. After the threshold voltage data of the currently tested device is generated, send a change signal to the test device, and the test device sends the change signal to the execution unit; S103: After the execution unit completes the command for reverse voltage biasing of the tested device, trigger the completion of the reverse voltage biasing path, obtain the bias voltage stress data of the tested device under a set duration, generate a corresponding reverse bias voltage binding force according to the bias voltage stress data, and perform overcurrent monitoring protection on the reverse voltage biasing path current in real time; S104: After completing the reverse voltage biasing path for a preset time, perform reverse voltage biasing disconnection, and then test the threshold voltage of the tested device again after it has withstood the bias voltage stress; S105: Obtain the threshold voltage data of the currently tested device, compare it with the threshold voltage data of the tested device after withstanding the bias voltage stress, determine whether the difference value is within the threshold range preset by the system, and determine the qualification of the tested device.

2. The voltage testing method of a power device according to claim 1, wherein, In S101, receiving the test information of the threshold voltage transmitted by the host computer includes: Receive the connection request sent by the host computer through a preset network. The connection request is used to request to establish a connection with the test device; Detect whether the current terminal account of the host computer is the identified target account; If the current terminal account of the host computer is the identified target account, connect to the host computer according to the connection request. After the connection is completed, receive the test information of the threshold voltage transmitted by the host computer.

3. The voltage testing method of a power device according to claim 2, characterized in that The preset network includes one or a combination of 3G network, 4G network, 5G network, and WIFI network.

4. The voltage testing method of a power device as described in claim 3, characterized in that, In S102, after the threshold voltage data of the currently tested device is generated, sending a change signal to the test device, and the test device sending the change signal to the execution unit includes: Obtain multiple current voltage signals fed back by the tested device within a preset time, and input the multiple current voltage signals into a preset content text recognition model; Obtain the text recognition result output by the text recognition model based on the current voltage signal. In the text recognition result, obtain the voltage value of the current voltage signal; Compare the obtained voltage value of the current voltage signal with the pre-set previous voltage threshold of the system, determine whether the voltage value of the recognized current voltage signal is the threshold voltage of the currently tested device. If it is determined to be the threshold voltage of the currently tested device, send a change signal to the test device.

5. The voltage testing method of a power device according to claim 4, characterized in that, Obtaining the text recognition result output by the text recognition model based on the current voltage signal includes: Obtain multiple text recognition models, and sort the data recognition thresholds of the multiple text recognition models in ascending order; Obtain the voltage values of multiple said current voltage signals, and input the voltage values of the current voltage signals into the text recognition model ranked first.

6. The voltage testing method of a power device as claimed in claim 5, wherein, Compare the obtained voltage values of the current voltage signal with the previously set voltage threshold of the system, and determine whether the voltage value of the currently recognized current voltage signal is the threshold voltage of the currently tested device, including: Obtain the voltage values of multiple current voltage signals recognized based on the text recognition model, and sort the voltage values of the current voltage signals from smallest to largest; Establish a two-dimensional data correlation curve, set the abscissa as the preset time period, the ordinate as the current voltage value, and complete the correlation of all voltage value points within the preset time; Based on the obtained two-dimensional data correlation curve, judge the curvature change data of the curve at each stage. If it is determined that the curvature change within the preset time period of each stage is constant, then determine that the voltage value within this preset time is the threshold voltage of the currently tested device.

7. The voltage testing method for a power device according to claim 6, characterized in that, In S103, generate a corresponding reverse bias voltage binding force according to the bias voltage stress data, and perform overcurrent monitoring protection on the reverse voltage bias path current in real time, including: Obtain multiple reverse voltage biases fed back by the device under test within the preset time, and input the multiple reverse voltage biases into the preset content text recognition model; Obtain the text recognition result output by the text recognition model based on the reverse voltage bias, and obtain the voltage value of the reverse voltage bias in the text recognition result; Obtain the voltage value of the reverse voltage bias, and establish a reverse bias voltage constraint model according to the maximum specified bias voltage stress data of the device under test; According to the voltage value of the reverse voltage bias, trigger the reverse bias voltage constraint model to establish a corresponding reverse bias voltage binding force, and complete the overcurrent monitoring protection of the reverse voltage bias path current.

8. The voltage testing method of a power device according to claim 7, wherein In S104, after completing the reverse voltage bias path for the preset time, perform reverse voltage bias interruption, including: Obtain multiple reverse biases fed back by the device under test within the preset time, and input the multiple reverse biases into the preset content text recognition model; Obtain the text recognition result output by the text recognition model based on the reverse bias, and obtain the voltage value of the reverse bias in the text recognition result; Compare the obtained voltage value of the reverse bias with the reverse bias voltage threshold preset by the system, and judge whether the voltage value of the recognized reverse bias is close to the reverse bias voltage threshold preset by the system. If the difference is large, perform the reverse bias voltage test again.

9. A voltage test system for a power device, characterized in that, For implementing the voltage test method according to any one of claims 1-8, the voltage test system includes: An acquisition module, configured to receive the test information of the threshold voltage transmitted by the host computer; A first test module, configured to obtain the reverse voltage bias state information of the device under test to be switched; A bias conversion module, configured to trigger the completion of the reverse voltage bias path after completing the command of the reverse voltage bias of the device under test, and obtain the bias voltage stress data of the device under test for a set duration; A constraint module, which is used to generate a corresponding reverse bias voltage constraint force according to the bias voltage stress data and monitor and protect the overcurrent of the reverse voltage bias path current in real time; A second test module, which is used to perform a reverse voltage bias open circuit and then test the threshold voltage of the device under test again after it withstands the bias voltage stress; An output module, which is used to obtain the threshold voltage data of the device under test currently and compare it with the threshold voltage data of the device under test after it withstands the bias voltage stress, and determine whether the difference value is within the threshold range preset by the system.

10. A voltage testing system for a power device as described in claim 9, characterized in that, The bias conversion module includes: An identification unit, which is used to identify the generation of the threshold voltage data of the device under test currently; An execution unit, which is used to receive a change signal and complete the command of reverse voltage bias of the device under test; A bias test unit, which is used to trigger the completion of the reverse voltage bias path and obtain the bias voltage stress data of the device under test for a set duration; A stress output unit, which is used to generate a bias voltage stress according to the bias voltage stress data.

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