Anti-reflection film thickness determination method and device suitable for micro lens, equipment and medium

Abstract

The invention relates to an anti-reflection film thickness determination method and device suitable for a micro lens, equipment and a medium. The method comprises the following steps: determining a first incident angle of incident light from air to an anti-reflection film target layer according to parameters corresponding to the surface shape of a micro lens, and then determining a second incident angle of the incident light in each anti-reflection film layer based on the first incident angle, a first refractive index of the air and a second refractive index of each anti-reflection film layer, and determining an evaluation function based on the first incident angle, the second refractive index and the second incident angle of each anti-reflection film layer, the wavelength of the incident light in the air, the third refractive index of the micro-lens and the third incident angle of the incident light in the micro-lens, and finally solving the evaluation function by taking the minimum value of the evaluation function as a target to obtain the thickness of each anti-reflection film layer. Therefore, the anti-reflection film can be designed according to the surface shape of the micro-lens, the reflectivity is reduced through the anti-reflection film designed according to the surface shape of the micro-lens, and the transmissivity of the micro-lens is improved.

Description

Technical Field

[0001] The present application relates to the technical field of photodetectors, and particularly to an antireflection film thickness determination method, device, equipment, and medium applicable to a microlens. Background Art

[0002] As a core device for converting optical signals into electrical signals, photodetectors have a wide range of applications in the fields of optical communication, imaging sensing, spectral analysis, etc. As a key structure on the surface of a photodetector, a microlens can reduce light loss by focusing light onto the sensitive area of the photodetector, enabling photons that originally fall on the non-sensitive area to be effectively utilized, thereby significantly improving the performance of the photodetector. An antireflection film usually consists of multiple thin films with different refractive indices. By the interference principle, the reflectivity of the microlens surface can be reduced, the reflection on the microlens surface can be suppressed, and the detection sensitivity of the photodetector can be improved.

[0003] However, currently, the antireflection film designed based on planar optical elements has a poor effect on reducing the reflectivity of the microlens surface. Summary of the Invention

[0004] Based on this, in view of the above technical problems, it is necessary to provide an antireflection film thickness determination method, device, equipment, and medium applicable to a microlens that can optimize the effect of reducing the reflectivity of the microlens surface by the antireflection film.

[0005] In a first aspect, the present application provides an antireflection film thickness determination method. The method includes:

[0006] Determine a first incident angle of incident light from air into the target layer of the antireflection film according to the parameters corresponding to the surface shape of the microlens; the target layer of the antireflection film is an antireflection film layer that contacts air among multiple antireflection film layers;

[0007] Based on the first incident angle, the first refractive index of air, and the second refractive indices of the antireflection film layers, determine the second incident angles of the incident light in the antireflection film layers;

[0008] Based on the first incident angle, the second refractive indices and second incident angles of the antireflection film layers, the wavelength of the incident light in air, the third refractive index of the microlens, and the third incident angle of the incident light in the microlens, determine an evaluation function; the evaluation function is used to characterize the relationship between the first incident angle, the second refractive indices and second incident angles of the antireflection film layers, the wavelength of the incident light in air, the third refractive index of the microlens, the third incident angle of the incident light in the microlens, and the thicknesses of the antireflection film layers;

[0009] Taking the minimum value of the evaluation function as the goal, solve the evaluation function to obtain the thicknesses of the antireflection film layers.

[0010] In one embodiment, determining an evaluation function based on the first incident angle, the second refractive indices and second incident angles of the antireflection film layers, the wavelength of the incident light in air, the third refractive index of the microlens, and the third incident angle of the incident light in the microlens includes:

[0011] For each antireflection film layer, determine a first transmission matrix for the transverse electric wave and a second transmission matrix for the transverse magnetic wave corresponding to the antireflection film layer according to the second refractive index and the second incident angle of the antireflection film layer and the wavelength of the incident light in air;

[0012] Determine a first amplitude reflectivity of the transverse electric wave according to the first incident angle, the first transmission matrices corresponding to the antireflection film layers, the third refractive index of the microlens, and the third incident angle of the incident light in the microlens, and determine a second amplitude reflectivity of the transverse magnetic wave according to the first incident angle, the second transmission matrices corresponding to the antireflection film layers, the third refractive index of the microlens, and the third incident angle of the incident light in the microlens;

[0013] Determine the evaluation function according to the first amplitude reflectivity and the second amplitude reflectivity.

[0014] In one embodiment, determining the evaluation function according to the first amplitude reflectivity and the second amplitude reflectivity includes:

[0015] Determine a first proportionality coefficient corresponding to the transverse electric wave according to the proportion of the transverse electric wave in the incident light;

[0016] Determine a second proportionality coefficient corresponding to the transverse magnetic wave according to the proportion of the transverse magnetic wave in the incident light;

[0017] Determine the evaluation function according to a first product between the first amplitude reflectivity and the first proportionality coefficient and a second product between the second amplitude reflectivity and the second proportionality coefficient.

[0018] In one embodiment, determining the evaluation function according to the first product between the first amplitude reflectivity and the first proportionality coefficient and the second product between the second amplitude reflectivity and the second proportionality coefficient includes:

[0019] Add an expression corresponding to the first product and an expression corresponding to the second product to obtain the evaluation function.

[0020] In one embodiment, determining the first amplitude reflectivity of the transverse electric wave according to the first incident angle, the first transfer matrix corresponding to each antireflection film layer, the third refractive index of the microlens, and the third incident angle of the incident light in the microlens, and determining the second amplitude reflectivity of the transverse magnetic wave according to the first incident angle, the second transfer matrix corresponding to each antireflection film layer, the third refractive index of the microlens, and the third incident angle of the incident light in the microlens includes:

[0021] Determining a first intermediate matrix according to each of the first transfer matrices, the third refractive index, and the third incident angle, and determining a first intermediate coefficient according to the first incident angle and two first elements of the first intermediate matrix; the first intermediate matrix is a matrix with two rows and one column;

[0022] Determining a second intermediate matrix according to each of the second transfer matrices, the third refractive index, and the third incident angle, and determining a second intermediate coefficient according to the first incident angle and two second elements of the second intermediate matrix; the second intermediate matrix is a matrix with two rows and one column;

[0023] Determining the first amplitude reflectivity of the transverse electric wave according to the first intermediate coefficient, and determining the second amplitude reflectivity of the transverse magnetic wave according to the second intermediate coefficient.

[0024] In one embodiment, determining the first amplitude reflectivity of the transverse electric wave according to the first intermediate coefficient, and determining the second amplitude reflectivity of the transverse magnetic wave according to the second intermediate coefficient includes:

[0025] Determining the first amplitude reflectivity according to the product between the first intermediate coefficient and the first conjugate number of the first intermediate coefficient;

[0026] Determining the second amplitude reflectivity according to the product between the second intermediate coefficient and the second conjugate number of the second intermediate coefficient.

[0027] In a second aspect, the present application further provides an antireflection film thickness determination device. The device includes:

[0028] A first determination module, configured to determine a first incident angle of incident light from air to an antireflection film target layer according to parameters corresponding to the surface shape of the microlens; the antireflection film target layer is an antireflection film layer in contact with air among multiple antireflection film layers;

[0029] A second determination module, configured to determine a second incident angle of the incident light in each of the antireflection film layers based on the first incident angle, the first refractive index of air, and the second refractive index of each of the antireflection film layers;

[0030] A third determination module, configured to determine an evaluation function based on the first incident angle, the second refractive indices and second incident angles of the antireflection film layers, the wavelength of the incident light in air, the third refractive index of the microlens, and the third incident angle of the incident light in the microlens; the evaluation function is used to characterize the relationship between the first incident angle, the second refractive indices and second incident angles of the antireflection film layers, the wavelength of the incident light in air, the third refractive index of the microlens, the third incident angle of the incident light in the microlens, and the thicknesses of the antireflection film layers;

[0031] A solution module, configured to solve the evaluation function with the goal of minimizing the value of the evaluation function, so as to obtain the thicknesses of the antireflection film layers.

[0032] In a third aspect, the present application further provides a computer device, including a memory and a processor, where the memory stores a computer program, and when the processor executes the computer program, the steps of any of the above methods are implemented.

[0033] In a fourth aspect, the present application further provides a computer-readable storage medium, on which a computer program is stored, and when the computer program is executed by a processor, the steps of any of the above methods are implemented.

[0034] In a fifth aspect, the present application further provides a computer program product, including a computer program, and when the computer program is executed by a processor, the steps of any of the above methods are implemented.

[0035] For the above antireflection film thickness determination method, device, equipment and medium applicable to microlenses, by determining the first incident angle of the incident light from air to the target layer of the antireflection film according to the parameters corresponding to the surface shape of the microlens, and then determining the second incident angle of the incident light in each antireflection film layer based on the first incident angle, the first refractive index of air and the second refractive indices of the antireflection film layers, so as to determine an evaluation function based on the first incident angle, the second refractive indices and second incident angles of the antireflection film layers, the wavelength of the incident light in air, the third refractive index of the microlens, and the third incident angle of the incident light in the microlens, and finally solving the evaluation function with the goal of minimizing the value of the evaluation function to obtain the thicknesses of the antireflection film layers, it is possible to design an antireflection film for the surface shape of the microlens, so as to reduce the reflectivity and improve the transmittance of the microlens through the antireflection film designed for the surface shape of the microlens. Description of the Drawings

[0036] Figure 1 is a schematic cross-sectional structure diagram of a microlens provided by an embodiment of the present application;

[0037] Figure 2 is a schematic diagram of an antireflection film designed based on a planar optical element provided by an embodiment of the present application;

[0038] Figure 3It is a schematic diagram of an antireflection film for a microlens provided by an embodiment of the present application;

[0039] Figure 4 It is an internal structure diagram of a computer device provided by an embodiment of the present application;

[0040] Figure 5 It is a schematic flowchart of a method for determining the thickness of an antireflection film provided by an embodiment of the present application;

[0041] Figure 6 It is a schematic flowchart of a method for determining an evaluation function provided by an embodiment of the present application;

[0042] Figure 7 It is a schematic flowchart of another method for determining an evaluation function provided by an embodiment of the present application;

[0043] Figure 8 It is a schematic flowchart of a method for determining a first amplitude reflectivity and a second amplitude reflectivity provided by an embodiment of the present application;

[0044] Figure 9 It is a schematic flowchart of another method for determining a first amplitude reflectivity and a second amplitude reflectivity provided by an embodiment of the present application;

[0045] Figure 10 It is a structural block diagram of an antireflection film thickness determination device provided by an embodiment of the present application. Detailed implementation manners

[0046] In order to make the objectives, technical solutions and advantages of the present application clearer, the present application will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present application and are not used to limit the present application.

[0047] As a core device for converting optical signals into electrical signals, photodetectors have wide applications in the fields of optical communication, imaging sensing, spectral analysis, etc. As a key structure on the surface of a photodetector, a microlens can reduce light loss by focusing light onto the sensitive area of the photodetector, enabling photons originally falling on the non-sensitive area to be effectively utilized, thereby significantly improving the performance of the photodetector. An antireflection film usually consists of multiple thin films with different refractive indices. By the interference principle, the reflectivity of the microlens surface can be reduced, and the reflection on the microlens surface can be suppressed, improving the detection sensitivity of the photodetector.

[0048] However, currently, the antireflection film designed based on planar optical elements has a poor effect of reducing the reflectivity of the microlens surface.

[0049] Exemplarily, referring to Figure 1-3 , Figure 1 It is a schematic diagram of a cross-sectional structure of a microlens provided by an embodiment of the present application,Figure 2 It is a schematic diagram of an antireflection film designed based on a planar optical element provided by an embodiment of the present application. Figure 3 It is a schematic diagram of an antireflection film for a microlens provided by an embodiment of the present application. As Figure 1 shown, the surface of the microlens of a photodetector is usually spherical or ellipsoidal, while traditional antireflection films are usually designed for planar optical elements as shown in Figure 2 . Therefore, applying a traditional antireflection film to the microlens of a photodetector will result in a deviation between the design effect and the actual effect. That is to say, the antireflection film designed based on a planar optical element has a poor effect of reducing the reflectivity of the microlens surface.

[0050] In addition, when designing an antireflection film for a planar optical element as shown in Figure 2 , usually only a specific incident angle is considered, generally the case of normal incidence, and the incident angle does not change in each layer of the antireflection film. As shown in Figure 3 , since the surface of the microlens is spherical or ellipsoidal, except for the case where light is incident from the vertex of the sphere or ellipsoid, when light is incident from other angles, even if the light is incident normally, the incident angle in each layer of the antireflection film will change.

[0051] The antireflection film thickness determination method provided by an embodiment of the present application can be applied to the application environment as shown in Figure 4 . Figure 4 It is an internal structure diagram of a computer device provided by an embodiment of the present application. This computer device can be a server, and its internal structure diagram can be as shown in Figure 4 . This computer device includes a processor, a memory, and a network interface connected through a system bus. Among them, the processor of this computer device is used to provide computing and control capabilities. The memory of this computer device includes a non-volatile storage medium and an internal memory. The non-volatile storage medium stores an operating system, a computer program, and a database. The internal memory provides an environment for the operation of the operating system and the computer program in the non-volatile storage medium. The network interface of this computer device is used to communicate with an external terminal through a network connection. When the computer program is executed by the processor, it realizes an antireflection film thickness determination method.

[0052] Those skilled in the art can understand that Figure 4 the structure shown in is only a block diagram of some structures related to the solution of the present application, and does not constitute a limitation on the computer device to which the solution of the present application is applied. A specific computer device may include more or fewer components than those shown in the figure, or combine some components, or have a different component layout.

[0053] In one embodiment, as shown in Figure 5 . Figure 5FIG. 0 is a schematic flow chart of an anti-reflection film thickness determination method provided by an embodiment of the present application. This method can be applied to Figure 4 a computer device, and the method includes the following steps:

[0054] S501. Determine a first incident angle of incident light from air to a target anti-reflection film layer according to parameters corresponding to the surface shape of the microlens.

[0055] Wherein, the target anti-reflection film layer is an anti-reflection film layer in contact with air among multiple anti-reflection film layers.

[0056] In one embodiment, a parametric equation corresponding to the surface of the microlens can be obtained, and parameters corresponding to the surface shape of the microlens can be obtained according to the parametric equation corresponding to the surface of the microlens.

[0057] Exemplarily, when the surface shape of the microlens is an ellipsoid, the parametric equation corresponding to the surface of the microlens is the parametric equation of an ellipse:

[0058]

[0059] Wherein, is the major semi-axis of the ellipse, is the minor semi-axis of the ellipse, is the parameter of the parametric equation of the ellipse. In the embodiments of the present application, , and can be used as parameters corresponding to the surface shape of the microlens.

[0060] Optionally, it can be stipulated that has a value range of , that is, corresponding to .

[0061] In the embodiments of the present application, the first incident angle of incident light from air to the target anti-reflection film layer can be calculated according to the parameters corresponding to the surface shape of the microlens through the following formula :

[0062]

[0063] S502. Based on the first incident angle, the first refractive index of air, and the second refractive indices of each anti-reflection film layer, determine the second incident angles of the incident light in each anti-reflection film layer.

[0064] In one embodiment, since the first refractive index of air is 1, the second incident angle of the incident light in the th anti-reflection film layer can be determined through the following formula :

[0065]

[0066] Among them, is the refractive index of the th antireflection film layer.

[0067] S503. Based on the first incident angle, the second refractive indices and second incident angles of the antireflection film layers, the wavelength of the incident light in air, the third refractive index of the microlens, and the third incident angle of the incident light in the microlens, determine the evaluation function.

[0068] Among them, the evaluation function is used to characterize the relationship between the first incident angle, the second refractive indices and second incident angles of the antireflection film layers, the wavelength of the incident light in air, the third refractive index of the microlens, the third incident angle of the incident light in the microlens, and the thicknesses of the antireflection film layers.

[0069] In one embodiment, since the incident light includes a transverse electric wave (TE wave, i.e., s light) and a transverse magnetic wave (TM wave, i.e., p light), the functional expressions of the first amplitude reflectivity of s light and the second amplitude reflectivity of p light can be determined according to the relationship between the first incident angle, the second refractive indices and second incident angles of the antireflection film layers, the wavelength of the incident light in air, the third refractive index of the microlens, the third incident angle of the incident light in the microlens, and the thicknesses of the antireflection film layers. Then, according to the proportion of s light in the incident light, determine the first proportional coefficient of the first amplitude reflectivity, and according to the proportion of p light in the incident light, determine the second proportional coefficient of the second amplitude reflectivity. Take the first proportional coefficient as the weight corresponding to the first amplitude reflectivity, and the second proportional coefficient as the weight corresponding to the second amplitude reflectivity. Finally, perform a weighted sum on the functional expressions of the first amplitude reflectivity and the second amplitude reflectivity of p light based on the first proportional coefficient and the second proportional coefficient to obtain the evaluation function.

[0070] Exemplarily, assuming that the proportions of s light and p light in the incident light are the same, then the first proportional coefficient and the second proportional coefficient can be determined to be both , so the evaluation function can be expressed as the following formula:

[0071]

[0072] Among them, is the first amplitude reflectivity, is the second amplitude reflectivity.

[0073] S504. With the goal of minimizing the value of the evaluation function, solve the evaluation function to obtain the thicknesses of the antireflection film layers.

[0074] In one embodiment, since in the parametric equation corresponding to the surface of the microlens the value range of is , that is , determine the value of the evaluation function, and then make increase by 1°, re-determine the value of the evaluation function until , and then calculate the average value of the values of each evaluation function , this average value can be used to characterize the reflectivity of the micro-lens surface :

[0075]

[0076] Since the lower the reflectivity of the micro-lens surface, the better the effect of the anti-reflection film, so the reflectivity is minimized as the goal, solve the thickness of each anti-reflection film layer, and thus ensure efficient light transmission within a wide range of incident angles by calculating the average value of the reflectivity at different incident angles, further improving the optical performance of the micro-lens.

[0077] It should be noted that the above reflectivity is a function expression regarding the thickness of each anti-reflection film layer.

[0078] In the embodiments of the present application, based on the parameters corresponding to the surface shape of the micro-lens, determine the first incident angle of the incident light from air to the target layer of the anti-reflection film, and then based on the first incident angle, the first refractive index of air and the second refractive indices of each anti-reflection film layer, determine the second incident angle of the incident light in each anti-reflection film layer, so as to determine the evaluation function based on the first incident angle, the second refractive indices of each anti-reflection film layer and the second incident angle, the wavelength of the incident light in air, the third refractive index of the micro-lens and the third incident angle of the incident light in the micro-lens. Finally, with the goal of minimizing the value of the evaluation function, solve the evaluation function to obtain the thickness of each anti-reflection film layer, so that an anti-reflection film can be designed for the surface shape of the micro-lens, and the reflectivity can be reduced through the anti-reflection film designed for the surface shape of the micro-lens, improving the transmittance of the micro-lens. Moreover, in the embodiments of the present application, the geometric characteristics of the micro-lens surface are considered, and even in the case of non-normal incidence, the reflectivity can be effectively reduced and the transmittance of the micro-lens can be improved.

[0079] Referring to Figure 6 , Figure 6 is a schematic flowchart of a method for determining an evaluation function provided by an embodiment of the present application. This implementation involves a possible implementation manner of determining an evaluation function based on the first incident angle, the second refractive indices of each anti-reflection film layer and the second incident angle, the wavelength of the incident light in air, the third refractive index of the micro-lens and the third incident angle of the incident light in the micro-lens. On the basis of the above embodiments, the above S503 includes the following steps:

[0080] S601. For each anti-reflection film layer, determine the first transmission matrix of the transverse electric wave corresponding to the anti-reflection film layer and the second transmission matrix of the transverse magnetic wave corresponding to the anti-reflection film layer according to the second refractive index and the second incident angle of the anti-reflection film layer, and the wavelength of the incident light in air.

[0081] In one embodiment, the first transmission matrix of the s-wave corresponding to the nth anti-reflection film layer can be expressed as:

[0082]

[0083] Where is the second refractive index of the nth anti-reflection film layer, is the second incident angle of the nth anti-reflection film layer, is the wavelength of the incident light in air, is the thickness of the nth anti-reflection film layer, is the imaginary unit.

[0084] Optionally, the second transmission matrix of the p-wave corresponding to the nth anti-reflection film layer can be expressed as:

[0085]

[0086] Where is the second refractive index of the nth anti-reflection film layer, is the second incident angle of the nth anti-reflection film layer, is the wavelength of the incident light in air, is the thickness of the nth anti-reflection film layer, is the imaginary unit.

[0087] S602. Determine the first amplitude reflectivity of the transverse electric wave according to the first incident angle, the first transmission matrix corresponding to each anti-reflection film layer, the third refractive index of the microlens, and the third incident angle of the incident light in the microlens, and determine the second amplitude reflectivity of the transverse magnetic wave according to the first incident angle, the second transmission matrix corresponding to each anti-reflection film layer, the third refractive index of the microlens, and the third incident angle of the incident light in the microlens.

[0088] Optionally, the third refractive index of the microlens and the third incident angle of the incident light in the microlens can be obtained, and then according to each first transmission matrix , the third refractive index and the third incident angle , determine the first intermediate matrix :

[0089]

[0090] Wherein, is the total number of antireflection film layers.

[0091] In the embodiments of the present application, the first intermediate coefficient can be determined according to the first intermediate matrix and the first incident angle , and then the first amplitude reflectivity of the transverse electric wave is determined based on the first intermediate coefficient.

[0092] In one embodiment, the second intermediate matrix can be determined according to each second transmission matrix , the third refractive index, and the third incident angle:

[0093]

[0094] Wherein, is the total number of antireflection film layers.

[0095] In the embodiments of the present application, the second intermediate coefficient can be determined according to the second intermediate matrix and the first incident angle , and then the second amplitude reflectivity of the transverse magnetic wave is determined based on the second intermediate coefficient.

[0096] S603, determine the evaluation function according to the first amplitude reflectivity and the second amplitude reflectivity.

[0097] Optionally, the first proportional coefficient of the first amplitude reflectivity can be determined according to the proportion of the s-wave in the incident light, and the second proportional coefficient of the second amplitude reflectivity can be determined according to the proportion of the p-wave in the incident light. The first proportional coefficient is used as the weight corresponding to the first amplitude reflectivity, and the second proportional coefficient is used as the weight corresponding to the second amplitude reflectivity. Finally, a weighted sum is performed on the function expressions of the first amplitude reflectivity and the second amplitude reflectivity based on the first proportional coefficient and the second proportional coefficient to obtain the evaluation function.

[0098] Exemplarily, assuming that the proportions of the s-wave and the p-wave in the incident light are the same, it can be determined that both the first proportional coefficient and the second proportional coefficient are , so the evaluation function can be expressed by the following formula:

[0099]

[0100] Wherein, is the first amplitude reflectivity, is the second amplitude reflectivity.

[0101] Alternatively, the function expressions of the first amplitude reflectivity and the second amplitude reflectivity can also be directly summed to obtain an evaluation function.

[0102] In the embodiments of the present application, for each antireflection film layer, according to the second refractive index, the second incident angle of the antireflection film layer, and the wavelength of the incident light in air, the first transmission matrix of the transverse electric wave corresponding to the antireflection film layer and the second transmission matrix of the transverse magnetic wave corresponding to the antireflection film layer are determined. Then, according to the first incident angle, the first transmission matrix corresponding to each antireflection film layer, the third refractive index of the microlens, and the third incident angle of the incident light in the microlens, the first amplitude reflectivity of the transverse electric wave is determined, and according to the first incident angle, the second transmission matrix corresponding to each antireflection film layer, the third refractive index of the microlens, and the third incident angle of the incident light in the microlens, the second amplitude reflectivity of the transverse magnetic wave is determined. Finally, the evaluation function is determined according to the first amplitude reflectivity and the second amplitude reflectivity, so that the thickness of each antireflection film layer can be solved based on the evaluation function, realizing the design of the antireflection film for the surface shape of the microlens, and reducing the reflectivity and improving the transmittance of the microlens through the antireflection film designed for the surface shape of the microlens.

[0103] Refer to Figure 7 , Figure 7 is a schematic flowchart of another method for determining an evaluation function provided by the embodiments of the present application. This embodiment relates to a possible implementation manner of how to determine the evaluation function according to the first amplitude reflectivity and the second amplitude reflectivity. Based on the above embodiments, the above S603 includes the following steps:

[0104] S701, determine the first proportionality coefficient corresponding to the transverse electric wave according to the proportion of the transverse electric wave in the incident light.

[0105] In the embodiments of the present application, the proportion of s light in the incident light can be determined and this proportion can be determined as the first proportionality coefficient corresponding to the transverse electric wave.

[0106] Optionally, if the proportion of s light in the incident light cannot be determined, the first proportionality coefficient corresponding to the transverse electric wave can be set to .

[0107] S702, determine the second proportionality coefficient corresponding to the transverse magnetic wave according to the proportion of the transverse magnetic wave in the incident light.

[0108] In the embodiments of the present application, the proportion of p light in the incident light can be determined and this proportion can be determined as the second proportionality coefficient corresponding to the transverse magnetic wave.

[0109] Optionally, if the proportion of p light in the incident light cannot be determined, the second proportionality coefficient corresponding to the transverse magnetic wave can be set to .

[0110] S703 determines an evaluation function based on a first product between a first amplitude reflectivity and a first proportionality coefficient and a second product between a second amplitude reflectivity and a second proportionality coefficient.

[0111] In one embodiment, the first proportionality coefficient can be used as the weight corresponding to the first amplitude reflectivity, and the second proportionality coefficient can be used as the weight corresponding to the second amplitude reflectivity. Then, the first product between the first amplitude reflectivity and the first proportionality coefficient and the second product between the second amplitude reflectivity and the second proportionality coefficient are determined to determine the evaluation function based on the first product and the second product.

[0112] Exemplarily, assuming that the proportions of s-polarized light and p-polarized light in the incident light are the same, it can be determined that both the first proportionality coefficient and the second proportionality coefficient are , so the evaluation function can be expressed by the following formula:

[0113]

[0114] where is the first amplitude reflectivity, is the second amplitude reflectivity.

[0115] In the embodiments of the present application, according to the proportion of the transverse electric wave in the incident light, the first proportionality coefficient corresponding to the transverse electric wave is determined, and according to the proportion of the transverse magnetic wave in the incident light, the second proportionality coefficient corresponding to the transverse magnetic wave is determined. The evaluation function is determined based on the first product between the first amplitude reflectivity and the first proportionality coefficient and the second product between the second amplitude reflectivity and the second proportionality coefficient, so that the thicknesses of the antireflection film layers can be solved based on the evaluation function, realizing the design of the antireflection film for the surface shape of the microlens, and reducing the reflectivity and improving the transmittance of the microlens through the antireflection film designed for the surface shape of the microlens.

[0116] Based on the above embodiments, the above S703 can be implemented in the following manner:

[0117] Add the expression corresponding to the first product to the expression corresponding to the second product to obtain the evaluation function.

[0118] In one embodiment, the first proportionality coefficient can be used as the weight corresponding to the first amplitude reflectivity, and the second proportionality coefficient can be used as the weight corresponding to the second amplitude reflectivity. Then, the first product between the first amplitude reflectivity and the first proportionality coefficient and the second product between the second amplitude reflectivity and the second proportionality coefficient are determined, and the expression corresponding to the first product is added to the expression corresponding to the second product to obtain the evaluation function.

[0119] It should be noted that the expressions corresponding to the first product and the second product are both functions of the thicknesses of the antireflection film layers.

[0120] In the embodiment of the present application, the expression corresponding to the first product is added to the expression corresponding to the second product to obtain an evaluation function, so that the thickness of each anti-reflection film layer can be solved based on the evaluation function, realizing the design of the anti-reflection film for the surface shape of the microlens, so as to reduce the reflectivity and improve the transmittance of the microlens through the anti-reflection film designed for the surface shape of the microlens.

[0121] Refer to Figure 8 , Figure 8 FIG. is a schematic flow chart of a method for determining the first amplitude reflectivity and the second amplitude reflectivity provided by an embodiment of the present application. This embodiment relates to a possible implementation manner of determining the first amplitude reflectivity of the transverse electric wave according to the first incident angle, the first transmission matrix corresponding to each anti-reflection film layer, the third refractive index of the microlens, and the third incident angle of the incident light in the microlens, and determining the second amplitude reflectivity of the transverse magnetic wave according to the first incident angle, the second transmission matrix corresponding to each anti-reflection film layer, the third refractive index of the microlens, and the third incident angle of the incident light in the microlens. On the basis of the above embodiment, S602 described above includes the following steps:

[0122] S801, determining a first intermediate matrix according to each first transmission matrix, the third refractive index, and the third incident angle, and determining a first intermediate coefficient according to the first incident angle and two first elements of the first intermediate matrix.

[0123] Among them, the first intermediate matrix is a matrix with two rows and one column.

[0124] Optionally, the third refractive index of the microlens can be obtained and the third incident angle of the incident light in the microlens , and then according to each first transmission matrix , the third refractive index and the third incident angle , determine the first intermediate matrix :

[0125]

[0126] Among them, is the total number of anti-reflection film layers.

[0127] In the embodiment of the present application, the first intermediate coefficient can be determined according to the first intermediate matrix and the first incident angle :

[0128]

[0129] Among them, is the th Elements.

[0130] S802. Determine the second intermediate matrix according to each second transmission matrix, the third refractive index, and the third incident angle, and determine the second intermediate coefficient according to the first incident angle and two second elements of the second intermediate matrix.

[0131] Among them, the second intermediate matrix is a matrix with two rows and one column.

[0132] In one embodiment, each second transmission matrix , the third refractive index, and the third incident angle can be used to determine the second intermediate matrix :

[0133]

[0134] Among them, is the total number of antireflection film layers.

[0135] In the embodiments of the present application, the second intermediate coefficient can be determined according to the second intermediate matrix and the first incident angle : :

[0136]

[0137] Among them, is the th element of the second intermediate matrix.

[0138] S803. Determine the first amplitude reflectivity of the transverse electric wave according to the first intermediate coefficient, and determine the second amplitude reflectivity of the transverse magnetic wave according to the second intermediate coefficient.

[0139] Exemplarily, the first conjugate number of the first intermediate coefficient can be determined, and then the first amplitude reflectivity of the transverse electric wave can be determined according to the first intermediate coefficient and the first conjugate number.

[0140] Optionally, the second conjugate number of the second intermediate coefficient can also be determined, and then the second amplitude reflectivity of the transverse magnetic wave can be determined according to the second intermediate coefficient and the second conjugate number.

[0141] In the embodiments of the present application, a first intermediate matrix is determined according to each first transmission matrix, the third refractive index, and the third incident angle, and a first intermediate coefficient is determined according to the first incident angle and two first elements of the first intermediate matrix. A second intermediate matrix is determined according to each second transmission matrix, the third refractive index, and the third incident angle, and a second intermediate coefficient is determined according to the first incident angle and two second elements of the second intermediate matrix. The first amplitude reflectivity of the transverse electric wave is determined according to the first intermediate coefficient, and the second amplitude reflectivity of the transverse magnetic wave is determined according to the second intermediate coefficient. Thus, an evaluation function can be determined based on the first amplitude reflectivity and the second amplitude reflectivity, and the thicknesses of the anti-reflection film layers can be solved based on the evaluation function, realizing the design of the anti-reflection film for the surface shape of the microlens, so as to reduce the reflectivity and improve the transmittance of the microlens through the anti-reflection film designed for the surface shape of the microlens.

[0142] Referring to Figure 9 , Figure 9 FIG. is a schematic flowchart of another method for determining the first amplitude reflectivity and the second amplitude reflectivity provided by the embodiments of the present application. This embodiment relates to a possible implementation manner of how to determine the first amplitude reflectivity of the transverse electric wave according to the first intermediate coefficient and the second amplitude reflectivity of the transverse magnetic wave according to the second intermediate coefficient. On the basis of the above embodiments, S803 described above includes the following steps:

[0143] S901, determine the first amplitude reflectivity according to the product between the first intermediate coefficient and the first conjugate number of the first intermediate coefficient.

[0144] Exemplarily, the first amplitude reflectivity can be determined based on the following formula :

[0145]

[0146] wherein, is the first intermediate coefficient, is the first conjugate number of the first intermediate coefficient.

[0147] S902, determine the second amplitude reflectivity according to the product between the second intermediate coefficient and the second conjugate number of the second intermediate coefficient.

[0148] Exemplarily, the second amplitude reflectivity can be determined based on the following formula :

[0149]

[0150] wherein, is the second intermediate coefficient, is the second conjugate number of the second intermediate coefficient.

[0151] In the embodiments of the present application, the first amplitude reflectivity is determined according to the product between the first intermediate coefficient and the first conjugate number of the first intermediate coefficient, and the second amplitude reflectivity is determined according to the product between the second intermediate coefficient and the second conjugate number of the second intermediate coefficient. Thus, an evaluation function can be determined based on the first amplitude reflectivity and the second amplitude reflectivity, and the thicknesses of the antireflection film layers can be solved based on the evaluation function, realizing the design of the antireflection film for the surface shape of the microlens, so as to reduce the reflectivity and improve the transmittance of the microlens through the antireflection film designed for the surface shape of the microlens.

[0152] For a clearer introduction of the embodiments of the present application, an exemplary illustration is given herein with reference to Table 1.

[0153] Exemplarily, it is assumed that the wavelength of the incident light is 1550 nm, and it is incident vertically from directly above onto the surface of the microlens. The corresponding parameters of the microlens surface are a = 100 nm, b = 90 nm, the angle θ between the line connecting the bottom vertex of the microlens cross-section to the centroid of the ellipse and the y-axis is 60°, and the antireflection film has 4 layers, which are alternately composed of a material with a low refractive index SiO2 and a material with a high refractive index Si3N4, that is, the 4 antireflection film layers are respectively: SiO2 layer, Si3N4 layer, SiO2 layer, and Si3N4 layer. Then, the reflectivity can be determined based on the method described in the embodiments of the present application. , and the corresponding transmittance is 99.988%. Therefore, the thicknesses of the antireflection film layers can be as shown in Table 1.

[0154]

[0155] Table 1

[0156] It should be understood that although the steps in the flowcharts involved in the above-described embodiments are sequentially shown according to the arrows, these steps are not necessarily executed in the order indicated by the arrows. Unless there is a clear indication in this article, the execution of these steps has no strict order limitation, and these steps can be executed in other orders. Moreover, at least a part of the steps in the flowcharts involved in the above-described embodiments may include multiple steps or multiple stages. These steps or stages are not necessarily executed at the same moment, but can be executed at different moments. The execution order of these steps or stages is not necessarily sequential either, but can be executed alternately or in turn with at least a part of other steps or steps or stages in other steps.

[0157] Based on the same inventive concept, an embodiment of the present application further provides an antireflection film thickness determination device for implementing the antireflection film thickness determination method involved above. The solution provided by this device to solve the problem is similar to the solution described in the above method. Therefore, the specific limitations in one or more embodiments of the antireflection film thickness determination device provided below can refer to the limitations on the antireflection film thickness determination method in the above text, and will not be repeated here.

[0158] In one embodiment, as Figure 10 shown, Figure 10 is a structural block diagram of an antireflection film thickness determination device provided by an embodiment of the present application. The device 1000 includes:

[0159] A first determination module 1001, configured to determine a first incident angle of incident light from air incident on the target antireflection film layer according to parameters corresponding to the surface shape of the microlens; the target antireflection film layer is an antireflection film layer in contact with air among multiple antireflection film layers.

[0160] A second determination module 1002, configured to determine a second incident angle of incident light in each antireflection film layer based on the first incident angle, the first refractive index of air, and the second refractive index of each antireflection film layer.

[0161] A third determination module 1003, configured to determine an evaluation function based on the first incident angle, the second refractive index of each antireflection film layer, the second incident angle, the wavelength of incident light in air, the third refractive index of the microlens, and the third incident angle of incident light in the microlens; the evaluation function is used to characterize the relationship between the first incident angle, the second refractive index of each antireflection film layer, the second incident angle, the wavelength of incident light in air, the third refractive index of the microlens, the third incident angle of incident light in the microlens, and the thickness of each antireflection film layer.

[0162] A solution module 1104, configured to solve the evaluation function with the goal of minimizing the value of the evaluation function to obtain the thickness of each antireflection film layer.

[0163] In one of the embodiments, the third determination module 1003 includes:

[0164] A first determination unit, configured to, for each antireflection film layer, determine a first transmission matrix of the transverse electric wave corresponding to the antireflection film layer and a second transmission matrix of the transverse magnetic wave corresponding to the antireflection film layer according to the second refractive index and the second incident angle of the antireflection film layer, and the wavelength of incident light in air.

[0165] A second determination unit, configured to determine a first amplitude reflectivity of a transverse electric wave according to a first incident angle, first transmission matrices corresponding to respective antireflection film layers, a third refractive index of the microlens, and a third incident angle of the incident light in the microlens, and determine a second amplitude reflectivity of a transverse magnetic wave according to the first incident angle, second transmission matrices corresponding to respective antireflection film layers, the third refractive index of the microlens, and the third incident angle of the incident light in the microlens.

[0166] A third determination unit, configured to determine an evaluation function according to the first amplitude reflectivity and the second amplitude reflectivity.

[0167] In one embodiment, the third determination unit includes:

[0168] A first determination subunit, configured to determine a first proportionality coefficient corresponding to the transverse electric wave according to the proportion of the transverse electric wave in the incident light.

[0169] A second determination subunit, configured to determine a second proportionality coefficient corresponding to the transverse magnetic wave according to the proportion of the transverse magnetic wave in the incident light.

[0170] A third determination subunit, configured to determine the evaluation function according to a first product between the first amplitude reflectivity and the first proportionality coefficient and a second product between the second amplitude reflectivity and the second proportionality coefficient.

[0171] In one embodiment, the third determination subunit is specifically configured to obtain the evaluation function by adding an expression corresponding to the first product and an expression corresponding to the second product.

[0172] In one embodiment, the second determination unit includes:

[0173] A fourth determination subunit, configured to determine a first intermediate matrix according to the respective first transmission matrices, the third refractive index, and the third incident angle, and determine a first intermediate coefficient according to the first incident angle and two first elements of the first intermediate matrix; the first intermediate matrix is a matrix with two rows and one column.

[0174] A fifth determination subunit, configured to determine a second intermediate matrix according to the respective second transmission matrices, the third refractive index, and the third incident angle, and determine a second intermediate coefficient according to the first incident angle and two second elements of the second intermediate matrix; the second intermediate matrix is a matrix with two rows and one column.

[0175] A sixth determination subunit, configured to determine the first amplitude reflectivity of the transverse electric wave according to the first intermediate coefficient and determine the second amplitude reflectivity of the transverse magnetic wave according to the second intermediate coefficient.

[0176] In one embodiment, the sixth determination subunit is specifically configured to determine a first amplitude reflectivity according to the product between a first intermediate coefficient and a first conjugate number of the first intermediate coefficient; and determine a second amplitude reflectivity according to the product between a second intermediate coefficient and a second conjugate number of the second intermediate coefficient.

[0177] Each module in the above antireflection film thickness determination device can be implemented in whole or in part by software, hardware, and their combination. Each of the above modules can be embedded in the processor in the computer device in hardware form or be independent of the processor, or can be stored in the memory in the computer device in software form, so as to facilitate the processor to call and execute the operations corresponding to each of the above modules.

[0178] In one embodiment, a computer device is provided, including a memory and a processor. A computer program is stored in the memory. When the processor executes the computer program, the following steps are implemented:

[0179] According to the parameters corresponding to the surface shape of the microlens, determine a first incident angle of incident light from air to the target layer of the antireflection film; the target layer of the antireflection film is an antireflection film layer in contact with air among multiple antireflection film layers;

[0180] Based on the first incident angle, the first refractive index of air, and the second refractive indices of the antireflection film layers, determine second incident angles of the incident light in the antireflection film layers;

[0181] Based on the first incident angle, the second refractive indices of the antireflection film layers, the second incident angles, the wavelength of the incident light in air, the third refractive index of the microlens, and the third incident angle of the incident light in the microlens, determine an evaluation function; the evaluation function is used to characterize the relationship between the first incident angle, the second refractive indices of the antireflection film layers, the second incident angles, the wavelength of the incident light in air, the third refractive index of the microlens, the third incident angle of the incident light in the microlens, and the thicknesses of the antireflection film layers;

[0182] Taking the minimum value of the evaluation function as the objective, solve the evaluation function to obtain the thicknesses of the antireflection film layers.

[0183] In one embodiment, when the processor executes the computer program, the following steps are further implemented:

[0184] For each antireflection film layer, according to the second refractive index and the second incident angle of the antireflection film layer, and the wavelength of the incident light in air, determine a first transmission matrix of the transverse electric wave corresponding to the antireflection film layer and a second transmission matrix of the transverse magnetic wave corresponding to the antireflection film layer;

[0185] Determine the first amplitude reflectivity of the transverse electric wave according to the first incident angle, the first transmission matrix corresponding to each antireflection film layer, the third refractive index of the microlens, and the third incident angle of the incident light in the microlens, and determine the second amplitude reflectivity of the transverse magnetic wave according to the first incident angle, the second transmission matrix corresponding to each antireflection film layer, the third refractive index of the microlens, and the third incident angle of the incident light in the microlens;

[0186] Determine the evaluation function according to the first amplitude reflectivity and the second amplitude reflectivity.

[0187] In one embodiment, when the processor executes the computer program, the following steps are further implemented:

[0188] Determine the first proportionality coefficient corresponding to the transverse electric wave according to the proportion of the transverse electric wave in the incident light;

[0189] Determine the second proportionality coefficient corresponding to the transverse magnetic wave according to the proportion of the transverse magnetic wave in the incident light;

[0190] Determine the evaluation function according to the first product between the first amplitude reflectivity and the first proportionality coefficient and the second product between the second amplitude reflectivity and the second proportionality coefficient.

[0191] In one embodiment, when the processor executes the computer program, the following steps are further implemented:

[0192] Add the expression corresponding to the first product to the expression corresponding to the second product to obtain the evaluation function.

[0193] In one embodiment, when the processor executes the computer program, the following steps are further implemented:

[0194] Determine the first intermediate matrix according to each first transmission matrix, the third refractive index, and the third incident angle, and determine the first intermediate coefficient according to the first incident angle and two first elements of the first intermediate matrix; the first intermediate matrix is a matrix with two rows and one column;

[0195] Determine the second intermediate matrix according to each second transmission matrix, the third refractive index, and the third incident angle, and determine the second intermediate coefficient according to the first incident angle and two second elements of the second intermediate matrix; the second intermediate matrix is a matrix with two rows and one column;

[0196] Determine the first amplitude reflectivity of the transverse electric wave according to the first intermediate coefficient, and determine the second amplitude reflectivity of the transverse magnetic wave according to the second intermediate coefficient.

[0197] In one embodiment, when the processor executes the computer program, the following steps are further implemented:

[0198] Determine the first amplitude reflectivity according to the product between the first intermediate coefficient and the first conjugate number of the first intermediate coefficient;

[0199] Determine the second amplitude reflectivity according to the product between the second intermediate coefficient and the second conjugate number of the second intermediate coefficient.

[0200] In one embodiment, a computer-readable storage medium is provided, on which a computer program is stored. When the computer program is executed by a processor, the following steps are implemented:

[0201] Determine the first incident angle of incident light from air to the target antireflection film layer according to the parameters corresponding to the surface shape of the microlens; the target antireflection film layer is an antireflection film layer in contact with air among multiple antireflection film layers;

[0202] Based on the first incident angle, the first refractive index of air, and the second refractive indices of the antireflection film layers, determine the second incident angles of the incident light in the antireflection film layers;

[0203] Based on the first incident angle, the second refractive indices of the antireflection film layers, the second incident angles, the wavelength of the incident light in air, the third refractive index of the microlens, and the third incident angle of the incident light in the microlens, determine an evaluation function; the evaluation function is used to characterize the relationship between the first incident angle, the second refractive indices of the antireflection film layers, the second incident angles, the wavelength of the incident light in air, the third refractive index of the microlens, the third incident angle of the incident light in the microlens, and the thicknesses of the antireflection film layers;

[0204] With the goal of minimizing the value of the evaluation function, solve the evaluation function to obtain the thicknesses of the antireflection film layers.

[0205] In one embodiment, when the computer program is executed by a processor, the following steps are further implemented:

[0206] For each antireflection film layer, determine the first transmission matrix of the transverse electric wave corresponding to the antireflection film layer and the second transmission matrix of the transverse magnetic wave corresponding to the antireflection film layer according to the second refractive index and the second incident angle of the antireflection film layer, and the wavelength of the incident light in air;

[0207] According to the first incident angle, the first transmission matrices corresponding to the antireflection film layers, the third refractive index of the microlens, and the third incident angle of the incident light in the microlens, determine the first amplitude reflectivity of the transverse electric wave, and according to the first incident angle, the second transmission matrices corresponding to the antireflection film layers, the third refractive index of the microlens, and the third incident angle of the incident light in the microlens, determine the second amplitude reflectivity of the transverse magnetic wave;

[0208] Determine the evaluation function according to the first amplitude reflectivity and the second amplitude reflectivity.

[0209] In one embodiment, when the computer program is executed by a processor, the following steps are further implemented:

[0210] Determine the first proportionality coefficient corresponding to the transverse electric wave according to the proportion of the transverse electric wave in the incident light;

[0211] Determine a second proportionality coefficient corresponding to the transverse magnetic wave according to the proportion of the transverse magnetic wave in the incident light;

[0212] Determine an evaluation function according to a first product between a first amplitude reflectivity and a first proportionality coefficient and a second product between a second amplitude reflectivity and a second proportionality coefficient.

[0213] In one embodiment, when the computer program is executed by a processor, the following steps are further implemented:

[0214] Add an expression corresponding to the first product and an expression corresponding to the second product to obtain the evaluation function.

[0215] In one embodiment, when the computer program is executed by a processor, the following steps are further implemented:

[0216] Determine a first intermediate matrix according to each first transfer matrix, a third refractive index, and a third incident angle, and determine a first intermediate coefficient according to a first incident angle and two first elements of the first intermediate matrix; the first intermediate matrix is a matrix with two rows and one column;

[0217] Determine a second intermediate matrix according to each second transfer matrix, a third refractive index, and a third incident angle, and determine a second intermediate coefficient according to a first incident angle and two second elements of the second intermediate matrix; the second intermediate matrix is a matrix with two rows and one column;

[0218] Determine a first amplitude reflectivity of the transverse electric wave according to the first intermediate coefficient, and determine a second amplitude reflectivity of the transverse magnetic wave according to the second intermediate coefficient.

[0219] In one embodiment, when the computer program is executed by a processor, the following steps are further implemented:

[0220] Determine the first amplitude reflectivity according to the product between the first intermediate coefficient and the first conjugate number of the first intermediate coefficient;

[0221] Determine the second amplitude reflectivity according to the product between the second intermediate coefficient and the second conjugate number of the second intermediate coefficient.

[0222] In one embodiment, a computer program product is provided, including a computer program, and when the computer program is executed by a processor, the following steps are implemented:

[0223] Determine a first incident angle of incident light from air to the target anti-reflection film layer according to parameters corresponding to the surface shape of the microlens; the target anti-reflection film layer is an anti-reflection film layer in contact with air among multiple anti-reflection film layers;

[0224] Based on the first incident angle, the first refractive index of air, and the second refractive indices of each anti-reflection film layer, determine a second incident angle of the incident light in each anti-reflection film layer;

[0225] Based on the first incident angle, the second refractive indices and second incident angles of each anti-reflection film layer, the wavelength of the incident light in air, the third refractive index of the microlens, and the third incident angle of the incident light in the microlens, an evaluation function is determined; the evaluation function is used to characterize the relationship between the first incident angle, the second refractive indices and second incident angles of each anti-reflection film layer, the wavelength of the incident light in air, the third refractive index of the microlens, the third incident angle of the incident light in the microlens, and the thicknesses of each anti-reflection film layer;

[0226] Taking the minimum value of the evaluation function as the objective, the evaluation function is solved to obtain the thicknesses of each anti-reflection film layer.

[0227] In one embodiment, when the computer program is executed by a processor, the following steps are further implemented:

[0228] For each anti-reflection film layer, according to the second refractive index and second incident angle of the anti-reflection film layer, and the wavelength of the incident light in air, the first transmission matrix of the transverse electric wave corresponding to the anti-reflection film layer and the second transmission matrix of the transverse magnetic wave corresponding to the anti-reflection film layer are determined;

[0229] According to the first incident angle, the first transmission matrices corresponding to each anti-reflection film layer, the third refractive index of the microlens, and the third incident angle of the incident light in the microlens, the first amplitude reflectivity of the transverse electric wave is determined, and according to the first incident angle, the second transmission matrices corresponding to each anti-reflection film layer, the third refractive index of the microlens, and the third incident angle of the incident light in the microlens, the second amplitude reflectivity of the transverse magnetic wave is determined;

[0230] The evaluation function is determined according to the first amplitude reflectivity and the second amplitude reflectivity.

[0231] In one embodiment, when the computer program is executed by a processor, the following steps are further implemented:

[0232] According to the proportion of the transverse electric wave in the incident light, the first proportionality coefficient corresponding to the transverse electric wave is determined;

[0233] According to the proportion of the transverse magnetic wave in the incident light, the second proportionality coefficient corresponding to the transverse magnetic wave is determined;

[0234] The evaluation function is determined according to the first product between the first amplitude reflectivity and the first proportionality coefficient and the second product between the second amplitude reflectivity and the second proportionality coefficient.

[0235] In one embodiment, when the computer program is executed by a processor, the following steps are further implemented:

[0236] The expression corresponding to the first product is added to the expression corresponding to the second product to obtain the evaluation function.

[0237] In one embodiment, when the computer program is executed by a processor, the following steps are further implemented:

[0238] Determine a first intermediate matrix based on each first transmission matrix, a third refractive index, and a third incident angle, and determine a first intermediate coefficient based on a first incident angle and two first elements of the first intermediate matrix; the first intermediate matrix is a matrix with two rows and one column;

[0239] Determine a second intermediate matrix based on each second transmission matrix, the third refractive index, and the third incident angle, and determine a second intermediate coefficient based on the first incident angle and two second elements of the second intermediate matrix; the second intermediate matrix is a matrix with two rows and one column;

[0240] Determine a first amplitude reflectivity of a transverse electric wave based on the first intermediate coefficient, and determine a second amplitude reflectivity of a transverse magnetic wave based on the second intermediate coefficient.

[0241] In one embodiment, when the computer program is executed by a processor, the following steps are further implemented:

[0242] Determine a first amplitude reflectivity based on the product between the first intermediate coefficient and the first conjugate number of the first intermediate coefficient;

[0243] Determine a second amplitude reflectivity based on the product between the second intermediate coefficient and the second conjugate number of the second intermediate coefficient.

[0244] Those of ordinary skill in the art can understand that all or part of the processes in the methods of the above embodiments can be completed by instructing relevant hardware through a computer program. The computer program can be stored in a non-volatile computer-readable storage medium. When the computer program is executed, it can include the processes of the embodiments of the above methods. Among them, any reference to a memory, database, or other medium used in the embodiments provided in the present application can include at least one of non-volatile and volatile memories. Non-volatile memory can include read-only memory (ROM), magnetic tape, floppy disk, flash memory, optical memory, high-density embedded non-volatile memory, resistive random access memory (ReRAM), magnetoresistive random access memory (MRAM), ferroelectric random access memory (FRAM), phase change memory (PCM), graphene memory, etc. Volatile memory can include random access memory (RAM) or external cache memory, etc. By way of illustration and not limitation, RAM can be in various forms, such as static random access memory (SRAM) or dynamic random access memory (DRAM), etc. The databases involved in the embodiments provided in the present application can include at least one of relational databases and non-relational databases. Non-relational databases can include distributed databases based on blockchain, etc., without limitation. The processors involved in the embodiments provided in the present application can be general-purpose processors, central processing units, graphics processing units, digital signal processors, programmable logic devices, data processing logics based on quantum computing, etc., without limitation.

[0245] The technical features of the above embodiments can be combined arbitrarily. For the sake of brevity of description, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, it should be considered as the scope described in this specification.

[0246] The above-described embodiments merely represent several implementation manners of the present application. The description thereof is relatively specific and detailed, but it should not be construed as a limitation on the patent scope of the present application. It should be noted that for those of ordinary skill in the art, without departing from the concept of the present application, several modifications and improvements can still be made, and these all belong to the protection scope of the present application. Therefore, the protection scope of the present application should be subject to the appended claims.

Claims

1. A method for determining the thickness of an antireflection film, characterized in that The method includes: Determining a first incident angle of incident light from air incident on the anti-reflection film target layer according to parameters corresponding to the surface shape of the microlens; the anti-reflection film target layer is an anti-reflection film layer in contact with air among multiple anti-reflection film layers; Determining a second incident angle of the incident light in each of the anti-reflection film layers based on the first incident angle, the first refractive index of air, and the second refractive index of each of the anti-reflection film layers; Determining an evaluation function based on the first incident angle, the second refractive index and the second incident angle of each of the anti-reflection film layers, the wavelength of the incident light in air, the third refractive index of the microlens, and the third incident angle of the incident light in the microlens; the evaluation function is used to characterize the relationship between the first incident angle, the second refractive index and the second incident angle of each of the anti-reflection film layers, the wavelength of the incident light in air, the third refractive index of the microlens, the third incident angle of the incident light in the microlens, and the thickness of each of the anti-reflection film layers; Solving the evaluation function with the goal of minimizing the value of the evaluation function to obtain the thickness of each of the anti-reflection film layers.

2. The method according to claim 1, wherein The determining the evaluation function based on the first incident angle, the second refractive index and the second incident angle of each of the anti-reflection film layers, the wavelength of the incident light in air, the third refractive index of the microlens, and the third incident angle of the incident light in the microlens includes: For each of the anti-reflection film layers, determining a first transmission matrix of the transverse electric wave corresponding to the anti-reflection film layer and a second transmission matrix of the transverse magnetic wave corresponding to the anti-reflection film layer according to the second refractive index and the second incident angle of the anti-reflection film layer, and the wavelength of the incident light in air; Determining a first amplitude reflectivity of the transverse electric wave according to the first incident angle, the first transmission matrix corresponding to each anti-reflection film layer, the third refractive index of the microlens, and the third incident angle of the incident light in the microlens, and determining a second amplitude reflectivity of the transverse magnetic wave according to the first incident angle, the second transmission matrix corresponding to each anti-reflection film layer, the third refractive index of the microlens, and the third incident angle of the incident light in the microlens; Determining the evaluation function according to the first amplitude reflectivity and the second amplitude reflectivity.

3. The method according to claim 2, characterized in that, The determining the evaluation function according to the first amplitude reflectivity and the second amplitude reflectivity includes: Determining a first proportionality coefficient corresponding to the transverse electric wave according to the proportion of the transverse electric wave in the incident light; Determining a second proportionality coefficient corresponding to the transverse magnetic wave according to the proportion of the transverse magnetic wave in the incident light; Determining the evaluation function according to a first product between the first amplitude reflectivity and the first proportionality coefficient and a second product between the second amplitude reflectivity and the second proportionality coefficient.

4. The method according to claim 3, characterized in that The determining the evaluation function according to the first product between the first amplitude reflectivity and the first proportionality coefficient and the second product between the second amplitude reflectivity and the second proportionality coefficient includes: Adding an expression corresponding to the first product and an expression corresponding to the second product to obtain the evaluation function.

5. The method according to claim 2, characterized in that, Determining the first amplitude reflectivity of the transverse electric wave according to the first incident angle, the first transfer matrix corresponding to each antireflection film layer, the third refractive index of the microlens, and the third incident angle of the incident light in the microlens, and determining the second amplitude reflectivity of the transverse magnetic wave according to the first incident angle, the second transfer matrix corresponding to each antireflection film layer, the third refractive index of the microlens, and the third incident angle of the incident light in the microlens, includes: Determining a first intermediate matrix according to each of the first transfer matrices, the third refractive index, and the third incident angle, and determining a first intermediate coefficient according to the first incident angle and two first elements of the first intermediate matrix; the first intermediate matrix is a matrix with two rows and one column; Determining a second intermediate matrix according to each of the second transfer matrices, the third refractive index, and the third incident angle, and determining a second intermediate coefficient according to the first incident angle and two second elements of the second intermediate matrix; the second intermediate matrix is a matrix with two rows and one column; Determining the first amplitude reflectivity of the transverse electric wave according to the first intermediate coefficient, and determining the second amplitude reflectivity of the transverse magnetic wave according to the second intermediate coefficient.

6. The method according to claim 5, wherein The determining the first amplitude reflectivity of the transverse electric wave according to the first intermediate coefficient and determining the second amplitude reflectivity of the transverse magnetic wave according to the second intermediate coefficient includes: Determining the first amplitude reflectivity according to the product between the first intermediate coefficient and the first conjugate number of the first intermediate coefficient; Determining the second amplitude reflectivity according to the product between the second intermediate coefficient and the second conjugate number of the second intermediate coefficient.

7. An anti-reflection film thickness determination device, characterized in that The apparatus includes: A first determination module, configured to determine a first incident angle of incident light from air to an antireflection film target layer according to parameters corresponding to the surface shape of the microlens; the antireflection film target layer is an antireflection film layer in contact with air among a plurality of antireflection film layers; A second determination module, configured to determine a second incident angle of the incident light in each of the antireflection film layers based on the first incident angle, the first refractive index of air, and the second refractive index of each of the antireflection film layers; A third determination module, configured to determine an evaluation function based on the first incident angle, the second refractive index and the second incident angle of each of the antireflection film layers, the wavelength of the incident light in air, the third refractive index of the microlens, and the third incident angle of the incident light in the microlens; the evaluation function is used to characterize the relationship between the first incident angle, the second refractive index and the second incident angle of each of the antireflection film layers, the wavelength of the incident light in air, the third refractive index of the microlens, the third incident angle of the incident light in the microlens, and the thickness of each of the antireflection film layers; A solving module, configured to solve the evaluation function with the goal of minimizing the value of the evaluation function to obtain the thickness of each of the antireflection film layers.

8. A computer device, comprising a memory and a processor, the memory storing a computer program, characterized in that, When the processor executes the computer program, the steps of the method according to any one of claims 1 to 6 are implemented.

9. A computer-readable storage medium having a computer program stored thereon, characterized in that, When the computer program is executed by the processor, the steps of the method according to any one of claims 1 to 6 are implemented.

10. A computer program product comprising a computer program, characterized in that, When the computer program is executed by a processor, it implements the steps of the method described in any one of claims 1 to 6.

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