Electro-optical modulator chip, integrated optical chip, integrated chip and optical communication equipment

Abstract

The invention provides an electro-optical modulator chip, an integrated optical chip, an integrated chip and optical communication equipment. Wherein the first input electrode is connected with the first modulation electrode, and the first input electrode is configured to receive a first modulation signal; the second input electrode is connected with the second modulation electrode, and the second input electrode is configured to receive a second modulation signal; the first modulation first sub-electrode, the first modulation second sub-electrode, the second modulation first sub-electrode and the second modulation second sub-electrode are located on the two sides of the extension direction of the first modulation light path and the second modulation light path respectively. The first modulation electrode is connected with the first modulation sub-electrode I and the first modulation sub-electrode II through the first bridging electrode; the second modulation electrode is connected with the second modulation first sub-electrode and the second modulation second sub-electrode through the second bridging electrode. The first input electrode and the second input electrode are arranged to modulate light in the first modulation light path and the second modulation light path, differential driving of the modulator can be achieved, the size is reduced, and cost is reduced.

Description

Technical Field

[0001] This application relates to the field of chips, and more particularly, to an electro-optic modulator chip, an integrated optical chip, an integrated chip, and an optical communication device. Background Art

[0002] In the field of optical communication, as a core device for converting electrical signals into optical signals, the performance of an electro-optic modulator directly affects the efficiency and reliability of the entire optical communication system. Currently, the mainstream electro-optic modulators on the market mainly adopt a single-ended drive form. Although this drive method performs well in some aspects, it also has some limitations. Especially in the design of the electrical chip, single-ended drive requires complex peripheral circuits, such as capacitors, inductors and other components, to support the normal operation of the modulator. These peripheral circuits not only increase the size of the electrical chip, but also make the cost relatively high, which to a certain extent restricts the development potential of electro-optic modulators in terms of miniaturization and low cost.

[0003] In addition, in current electro-optic modulators, each optical modulation part can usually only adjust a single modulation optical path. This design is unable to cope with complex optical networks or scenarios that require simultaneous processing of multiple optical signals, resulting in low overall efficiency. Summary of the Invention

[0004] In view of this, the purpose of the embodiments of this application is to provide an electro-optic modulator chip, an integrated optical chip, an integrated chip, and an optical communication device, which can reduce the chip size, lower the cost, and improve the modulation efficiency at the same time.

[0005] In a first aspect, an embodiment of the present application provides an electro-optic modulator chip, including: an input electrode part and an optical modulation part; the input electrode part includes: a first input electrode and a second input electrode; the optical modulation part includes: a first modulation electrode, a second modulation electrode, a first modulation sub-electrode, a first modulation second sub-electrode, a second modulation sub-electrode, a second modulation second sub-electrode, a first modulation optical path, a second modulation optical path, a first bridging electrode, and a second bridging electrode; the first input electrode is connected to the first modulation electrode, and the first input electrode is configured to receive a first modulation signal; the second input electrode is connected to the second modulation electrode, and the second input electrode is configured to receive a second modulation signal; the first modulation sub-electrode, the first modulation second sub-electrode, the second modulation sub-electrode, and the second modulation second sub-electrode are respectively located on both sides of the extending direction of the first modulation optical path and the second modulation optical path; the first modulation electrode is connected to the first modulation sub-electrode and the first modulation second sub-electrode through the first bridging electrode; the second modulation electrode is connected to the second modulation sub-electrode and the second modulation second sub-electrode through the second bridging electrode; wherein, the first modulation electrode and / or the second modulation electrode is configured to modulate the light in the first modulation optical path and / or the second modulation optical path through some or all of the first modulation sub-electrode, the first modulation second sub-electrode, the second modulation sub-electrode, and the second modulation second sub-electrode.

[0006] In the above implementation process, by providing two input electrodes, namely the first input electrode and the second input electrode, and connecting the first input electrode to the sub-electrodes located on both sides of the first modulation optical path and the second modulation optical path through the first modulation electrode and the first bridging electrode, and connecting the second input electrode to the sub-electrodes located on both sides of the first modulation optical path and the second modulation optical path through the second modulation electrode and the second bridging electrode to modulate the light in the first modulation optical path and the second modulation optical path. On the one hand, differential driving of the modulator can be realized, and there is no need to set up complex peripheral circuits outside the chip, which can reduce the size of the chip and the cost of the chip. On the other hand, the light in the first modulation optical path and the second modulation optical path can be modulated simultaneously, which can improve the modulation efficiency of the electro-optic modulator chip.

[0007] In one embodiment, the first modulation sub-electrode and the second modulation sub-electrode are located on both sides of the extending direction of the first modulation optical path; the first modulation second sub-electrode and the second modulation second sub-electrode are located on both sides of the extending direction of the second modulation optical path; wherein, the first modulation electrode and the second modulation electrode are configured to modulate the light in the first modulation optical path through the first modulation sub-electrode and the second modulation sub-electrode; the first modulation electrode and the second modulation electrode are configured to modulate the light in the second modulation optical path through the first modulation second sub-electrode and the second modulation second sub-electrode.

[0008] In the above implementation process, by setting the first modulation sub-electrode and the second modulation sub-electrode on both sides of the extension direction of the first modulation optical path, the first modulation second sub-electrode and the second modulation second sub-electrode on both sides of the extension direction of the second modulation optical path, and connecting the first modulation electrode to the first modulation sub-electrode and the first modulation second sub-electrode through the first bridging electrode, and connecting the second modulation electrode to the second modulation sub-electrode and the second modulation second sub-electrode through the second bridging electrode. Therefore, whether there is a modulation signal in the first modulation electrode or the second modulation electrode, the first modulation optical path and the second modulation optical path can be modulated, thereby improving the adjustment efficiency of the electro-optic modulator chip.

[0009] In one embodiment, it includes: a plurality of the optical modulation parts; the first modulation electrode, the second modulation electrode, the first modulation optical path, and the second modulation optical path penetrate through the plurality of the optical modulation parts; and the plurality of the optical modulation parts are sequentially arranged along the extension directions of the first modulation optical path and the second modulation optical path.

[0010] In the above implementation process, by arranging a plurality of optical modulation parts in the electro-optic modulator chip, the modulation range of light by the electro-optic modulator chip can be increased, and the application scenarios of the electro-optic modulator chip can be increased.

[0011] In one embodiment, the optical modulation part includes a plurality of segments, and the electro-optic modulator chip further includes: a bent optical path and a bent electrode; two ends of the bent electrode are respectively connected to one end of the first modulation electrodes of two adjacent segments and one end of the second modulation electrodes; two ends of the bent optical path are respectively connected to one end of the first modulation optical paths of two adjacent segments and one end of the second modulation optical paths; wherein, the plurality of segments are configured to be folded by the bent optical path and the bent electrode.

[0012] In the above implementation process, when there are more segments in the optical modulation part, by arranging a bent optical path and a bent electrode to fold the multi-terminal optical modulation part, the requirement for the size of the electro-optic modulator chip by the multi-segment optical modulation part can be reduced, and while increasing the application scenarios of the electro-optic modulator chip, the volume of the electro-optic modulator chip can be reduced.

[0013] In one embodiment, the first modulation electrode, the first modulation sub-electrode, the first modulation second sub-electrode, and the first bridging electrode are single-layer metals of the same process or multi-layer metals of different processes; and / or the second modulation electrode, the second modulation sub-electrode, the second modulation second sub-electrode, and the second bridging electrode are single-layer metals of the same process or multi-layer metals of different processes.

[0014] In the above implementation process, by making each of the interconnected electrodes a single-layer metal in the same process, the difficulty of setting each electrode and the manufacturing consumables can be reduced, the connection difficulty between the electrodes can be lowered, and at the same time, the material consumption of the bridging electrodes can be reduced, saving the manufacturing cost of the electro-optic modulator chip. Additionally, by setting each of the interconnected electrodes as multi-layer metals in different processes, various changes in the positions of the modulation electrode and the modulation sub-electrodes can be accommodated, enabling flexible connection between the modulation electrode and the modulation sub-electrodes, increasing the flexibility of the electro-optic modulator chip structure setting, and expanding the application scenarios of the electro-optic modulator chip.

[0015] In one embodiment, the materials of the first modulation electrode, the second modulation electrode, the first bridging electrode, the second bridging electrode, the first modulation sub-electrode, the first second modulation sub-electrode, the second modulation sub-electrode, and the second second modulation sub-electrode are metal or transparent conductive oxide.

[0016] In the above implementation process, since both metals and transparent conductive oxides have good electrical conductivity, by setting the materials of the first modulation electrode, the second modulation electrode, the first bridging electrode, the second bridging electrode, the first modulation sub-electrode, the first second modulation sub-electrode, the second modulation sub-electrode, and the second second modulation sub-electrode as metal or transparent conductive oxide, the electrical conductivity of the first modulation electrode, the second modulation electrode, the first bridging electrode, the second bridging electrode, the first modulation sub-electrode, the first second modulation sub-electrode, the second modulation sub-electrode, and the second second modulation sub-electrode can be improved, thereby enhancing the modulation efficiency of the electro-optic modulator chip.

[0017] In one embodiment, it further includes: a substrate and an insulating layer; the insulating layer is located on one side of the substrate; the first modulation electrode and the second modulation electrode are disposed on the outer surface of the insulating layer away from the substrate or inside the insulating layer; the first modulation optical path and the second modulation optical path are disposed inside the insulating layer.

[0018] In one embodiment, the substrate includes one or more cavity structures.

[0019] In the above implementation process, since the refractive index of light transmission in air is relatively low, by providing cavity structures in the substrate, the transmission loss can be reduced and the transmission quality can be improved.

[0020] In one embodiment, the materials of the first modulation optical path and the second modulation optical path are lithium niobate, barium titanate, or lead zirconate titanate.

[0021] In the above implementation process, by setting the first modulation optical path and the second modulation optical path as materials that have a modulating effect on light waves to form an electro-optic modulator, light waves can be modulated efficiently and rapidly, enabling precise control and processing of optical signals.

[0022] In a second aspect, an integrated optical chip provided by an embodiment of the present application includes: a laser, a detector, and an electro-optic modulator chip in the first aspect or any implementation manner of the first aspect; the laser is coupled to the electro-optic modulator chip; wherein, the laser is configured to emit an optical signal, the electro-optic modulator chip is configured to receive and modulate an input optical signal, and output a modulated optical signal; the detector is connected to the electro-optic modulator chip, and the detector is configured to detect the modulated optical signal.

[0023] In a third aspect, an integrated chip provided by an embodiment of the present application includes: an electrical chip, and an electro-optic modulator chip in the first aspect or any implementation manner of the first aspect; the electrical chip is connected to the electro-optic modulator chip by wire bonding or ball bonding.

[0024] In a fourth aspect, an optical communication device provided by an embodiment of the present application includes: an electro-optic modulator chip in the first aspect or any implementation manner of the first aspect.

[0025] To make the above objects, features, and advantages of the present application more obvious and understandable, specific embodiments are hereinafter given, and in conjunction with the accompanying drawings, the detailed description is as follows. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] To more clearly illustrate the technical solutions of the embodiments of the present application, the following briefly introduces the drawings required in the embodiments. It should be understood that the following drawings only show some embodiments of the present application, and therefore should not be regarded as limiting the scope. For those of ordinary skill in the art, other related drawings can be obtained based on these drawings without creative efforts.

[0027] Figure 1 Schematic diagram of an electro-optic modulator chip in which a first bridging electrode connects the ends of a first modulation sub-electrode and a first modulation second sub-electrode, and a second bridging electrode connects the ends of a second modulation sub-electrode and a second modulation second sub-electrode provided by an embodiment of the present application;

[0028] Figure 2 Schematic diagram of an electro-optic modulator chip in which a first bridging electrode connects the middle parts of a first modulation sub-electrode and a first modulation second sub-electrode, and a second bridging electrode connects the middle parts of a second modulation sub-electrode and a second modulation second sub-electrode provided by an embodiment of the present application;

[0029] Figure 3 Schematic diagram of an electro-optic modulator chip in which the optical modulation part is in a "U" shape provided by an embodiment of the present application;

[0030] Figure 4 Schematic diagram of an electro-optic modulator chip in which the optical modulation part is in an "S" shape provided by an embodiment of the present application;

[0031] Figure 5 Cross-sectional view of the first bridging electrode provided by the embodiment of the present application being a double-layer bridge;

[0032] Figure 6 Cross-sectional view of the second bridging electrode provided by the embodiment of the present application being a double-layer bridge;

[0033] Figure 7 Schematic diagram of an electro-optic modulator chip with a cavity structure provided by the embodiment of the present application on a substrate;

[0034] Figure 8 Schematic diagram of an electro-optic modulator chip including a first resistor and a second resistor provided by the embodiment of the present application.

[0035] Description of the drawings: 100 - input electrode part, 110 - first input electrode, 120 - second input electrode, 200 - optical modulation part, 211 - first modulation electrode, 212 - second modulation electrode, 221 - first modulation sub-electrode, 222 - first modulation second sub-electrode, 223 - second modulation sub-electrode, 224 - second modulation second sub-electrode, 231 - first modulation optical path, 232 - second modulation optical path, 241 - first bridging electrode, 242 - second bridging electrode, 300 - substrate, 400 - insulating layer, 510 - first resistor, 520 - second resistor. Detailed implementation manners

[0036] Next, the technical solutions in the embodiments of the present application will be described with reference to the drawings in the embodiments of the present application.

[0037] It should be noted that: Similar reference numerals and letters denote similar items in the following drawings. Therefore, once an item is defined in one drawing, it does not need to be further defined and explained in subsequent drawings. At the same time, in the description of the present application, the terms "first", "second", etc. are only used for distinguishing descriptions and cannot be understood as indicating or implying relative importance.

[0038] With the continuous emergence and popularization of emerging services such as AI and 5G, the total volume of long-distance optical communication and data center interconnection transmission has increased sharply. How to continuously improve the rate of the transmission system and reduce the power consumption of the transmission system is the focus of the development of optical communication technology. In an optical communication system, an electro-optic modulator is the core component for realizing the conversion from an electrical signal to an optical signal in the optical communication system. An electro-optic modulator with higher efficiency, higher bandwidth, and lower power consumption is of great significance for realizing a higher-performance optical communication system.

[0039] The inventors of the present application have discovered through long-term research that the current main driving form of modulators is single-ended driving. In the electrical chips with single-ended driving, complex peripheral circuits (including capacitors, inductors, etc.) need to be included, resulting in a relatively large size and high cost of the electrical chips, which is not conducive to the miniaturization and cost reduction of the electrical chips. Moreover, in the existing electro-optic modulator chips, the modulation electrodes in each optical modulation part are usually connected to a single modulation optical path, so that the light in only one modulation optical path can be modulated at the same time, and the modulation efficiency is relatively low.

[0040] In view of this, the present application proposes an electro-optic modulator chip. By providing two input electrodes, namely a first input electrode and a second input electrode, and connecting the first input electrode to the sub-electrodes arranged on both sides of the first modulation optical path and the second modulation optical path through a first modulation electrode and a first bridging electrode, and connecting the second input electrode to the sub-electrodes arranged on both sides of the first modulation optical path and the second modulation optical path through a second modulation electrode and a second bridging electrode, so as to modulate the light in the first modulation optical path and the second modulation circuit. On the one hand, differential driving of the modulator can be realized, and there is no need to set up complex peripheral circuits outside the chip, which can reduce the size of the chip and the cost of the chip. On the other hand, the light in the first modulation optical path and the second modulation optical path can be modulated simultaneously, which can improve the modulation efficiency of the electro-optic modulator chip.

[0041] For the convenience of understanding this embodiment, first, an electro-optic modulator chip disclosed in the embodiments of the present application will be introduced in detail.

[0042] As Figure 1 、 Figure 2 shown, it is an electro-optic modulator chip provided by the embodiments of the present application, including: an input electrode part 100 and an optical modulation part 200.

[0043] Among them, the input electrode part 100 includes: a first input electrode 110 and a second input electrode 120; the optical modulation part 200 includes: a first modulation electrode 211, a second modulation electrode 212, a first modulation sub-electrode 221, a first modulation second sub-electrode 222, a second modulation sub-electrode 223, a second modulation second sub-electrode 224, a first modulation optical path 231, a second modulation optical path 232, a first bridging electrode 241, and a second bridging electrode 242.

[0044] The first input electrode 110 here is connected to the first modulation electrode 211, and the second input electrode 120 is connected to the second modulation electrode 212; the first modulation sub-electrode 221, the first modulation second sub-electrode 222, the second modulation sub-electrode 223, and the second modulation second sub-electrode 224 are respectively located on both sides of the extending directions of the first modulation optical path 231 and the second modulation optical path 232; the first modulation electrode 211 is connected to the first modulation sub-electrode 221 and the first modulation second sub-electrode 222 through the first bridging electrode 241; the second modulation electrode 212 is connected to the second modulation sub-electrode 223 and the second modulation second sub-electrode 224 through the second bridging electrode 242.

[0045] The above-mentioned first input electrode 110 is configured to receive a first modulation signal, and the second input electrode 120 is configured to receive a second modulation signal.

[0046] In one embodiment, the first modulation signal and the second modulation signal may be two differential signals.

[0047] Wherein, the first modulation electrode 211 and / or the second modulation electrode 212 are configured to modulate the light in the first modulation optical path 231 and / or the second modulation optical path 232 through some or all of the first modulation sub-electrode 221, the first modulation second sub-electrode 222, the second modulation sub-electrode 223, and the second modulation second sub-electrode 224.

[0048] Optionally, the first modulation sub-electrode 221 and the second modulation sub-electrode 223 are arranged on both sides of the extending direction of the first modulation optical path 231, and the first modulation second sub-electrode 222 and the second modulation second sub-electrode 224 are arranged on both sides of the extending direction of the second modulation optical path 232. Or, the first modulation second sub-electrode 222 and the second modulation sub-electrode 223 are arranged on both sides of the extending direction of the first modulation optical path 231, and the first modulation sub-electrode 221 and the second modulation second sub-electrode 224 are arranged on both sides of the extending direction of the second modulation optical path 232. The specific arrangement manner of the first modulation sub-electrode 221, the first modulation second sub-electrode 222, the second modulation sub-electrode 223, and the second modulation second sub-electrode 224 can be selected according to the actual situation.

[0049] It should be understood that when the first modulation sub-electrode 221 and the second modulation sub-electrode 223 are disposed on both sides of the extending direction of the first modulation optical path 231, the first modulation electrode 211 and the second modulation electrode 212 are configured to modulate the light in the first modulation optical path 231 through the first modulation sub-electrode 221 and the second modulation sub-electrode 223. When the first modulation sub-electrode 222 and the second modulation sub-electrode 224 are disposed on both sides of the extending direction of the second modulation optical path 232, the first modulation electrode 211 and the second modulation electrode 212 are configured to modulate the light in the second modulation optical path 232 through the first modulation sub-electrode 222 and the second modulation sub-electrode 224.

[0050] When the first modulation sub-electrode 222 and the second modulation sub-electrode 223 are disposed on both sides of the extending direction of the first modulation optical path 231, the first modulation electrode 211 and the second modulation electrode 212 are configured to modulate the light in the first modulation optical path 231 through the first modulation sub-electrode 222 and the second modulation sub-electrode 223. When the first modulation sub-electrode 221 and the second modulation sub-electrode 224 are disposed on both sides of the extending direction of the second modulation optical path 232, the first modulation electrode 211 and the second modulation electrode 212 are configured to modulate the light in the second modulation optical path 232 through the first modulation sub-electrode 221 and the second modulation sub-electrode 224.

[0051] In one embodiment, the first modulation sub-electrode 221 and the first modulation sub-electrode 222 are disposed on the side of the first modulation optical path 231 away from the second modulation optical path 232 and on the side of the second modulation optical path 232 away from the first modulation optical path 231; the second modulation sub-electrode 223 and the second modulation sub-electrode 224 are disposed on the side of the first modulation optical path 231 close to the second modulation optical path 232 and on the side of the second modulation optical path 232 close to the first modulation optical path 231.

[0052] In another embodiment, the first modulation sub-electrode 221 and the first modulation sub-electrode 222 are disposed on the side of the first modulation optical path 231 close to the second modulation optical path 232 and on the side of the second modulation optical path 232 close to the first modulation optical path 231; the second modulation sub-electrode 223 and the second modulation sub-electrode 224 are disposed on the side of the first modulation optical path 231 away from the second modulation optical path 232 and on the side of the second modulation optical path 232 away from the first modulation optical path 231.

[0053] The arrangement of the above-mentioned first modulation sub-electrode 221, first modulation second sub-electrode 222, second modulation sub-electrode 223 and second modulation second sub-electrode 224 is only exemplary, and the specific arrangement of the first modulation sub-electrode 221, first modulation second sub-electrode 222, second modulation sub-electrode 223 and second modulation second sub-electrode 224 can be selected according to the actual situation.

[0054] Here, the first bridging electrode 241 can be connected to the ends of the first modulation sub-electrode 221 and the first modulation second sub-electrode 222 (as Figure 1 shown), or can be connected to the middle parts of the first modulation sub-electrode 221 and the first modulation second sub-electrode 222 (as Figure 2 shown); the second bridging electrode 242 can be connected to the ends of the second modulation sub-electrode 223 and the second modulation second sub-electrode 224 (as Figure 1 shown), or can be connected to the middle parts of the second modulation sub-electrode 223 and the second modulation second sub-electrode 224 (as Figure 2 shown). The position where the first bridging electrode 241 connects the first modulation sub-electrode 221 and the first modulation second sub-electrode 222 can be selected according to the actual situation, and the position where the second bridging electrode 242 connects the second modulation sub-electrode 223 and the second modulation second sub-electrode 224 can be selected according to the actual situation.

[0055] The materials of the above-mentioned first modulation optical path 231 and second modulation optical path 232 are materials with electro-optical effects. For example, lithium niobate, barium titanate or lead zirconate titanate, etc. The specific materials of the first modulation optical path 231 and the second modulation optical path 232 can be selected according to the actual situation.

[0056] The materials of the first modulation sub-electrode 221, first modulation second sub-electrode 222, second modulation sub-electrode 223 and second modulation second sub-electrode 224 here are conductive materials. For example, metals, transparent conductive oxides, etc. The specific materials of the first modulation sub-electrode 221, first modulation second sub-electrode 222, second modulation sub-electrode 223 and second modulation second sub-electrode 224 can be selected according to the actual situation.

[0057] In the above implementation process, by setting two input electrodes, namely the first input electrode 110 and the second input electrode 120, and connecting the first input electrode 110 to sub - electrodes arranged on both sides of the first modulation optical path 231 and the second modulation optical path 232 through the first modulation electrode 211 and the first bridging electrode 241, and connecting the second input electrode 120 to sub - electrodes arranged on both sides of the first modulation optical path 231 and the second modulation optical path 232 through the second modulation electrode 212 and the second bridging electrode 242 to modulate the light in the first modulation optical path 231 and the second modulation circuit. On the one hand, differential driving of the modulator can be achieved, eliminating the need for complex peripheral circuits around the chip, reducing the chip size and cost. On the other hand, the light in both the first modulation optical path 231 and the second modulation optical path 232 can be modulated simultaneously, improving the modulation efficiency of the electro - optic modulator chip.

[0058] In a possible implementation, as Figure 1 、 Figure 2 shown, the first modulation sub - electrode 221 and the second modulation sub - electrode 223 are located on both sides of the extending direction of the first modulation optical path 231; the first modulation second sub - electrode 222 and the second modulation second sub - electrode 224 are located on both sides of the extending direction of the second modulation optical path 232.

[0059] Among them, the first modulation electrode 211 and the second modulation electrode 212 are configured to modulate the light in the first modulation optical path 231 through the first modulation sub - electrode 221 and the second modulation sub - electrode 223; the first modulation electrode 211 and the second modulation electrode 212 are configured to modulate the light in the second modulation optical path 232 through the first modulation second sub - electrode 222 and the second modulation second sub - electrode 224.

[0060] Here, the first modulation sub - electrode 221 can be located on the side of the extending direction of the first modulation optical path 231 far from the second modulation circuit, and the second modulation sub - electrode 223 is located on the side of the extending direction of the first modulation optical path 231 close to the second modulation circuit. The first modulation second sub - electrode 222 can be located on the side of the extending direction of the second modulation optical path 232 far from the first modulation circuit, and the second modulation second sub - electrode 224 is located on the side of the extending direction of the second modulation optical path 232 close to the first modulation circuit.

[0061] The above - mentioned first modulation electrode 211 is configured to modulate the light in the first modulation optical path 231 through the first modulation sub - electrode 221, and the second modulation electrode 212 is configured to modulate the light in the first modulation optical path 231 through the second modulation sub - electrode 223. The first modulation electrode 211 is configured to modulate the light in the second modulation optical path 232 through the first modulation second sub - electrode 222, and the second modulation electrode 212 is configured to modulate the light in the second modulation optical path 232 through the second modulation second sub - electrode 224.

[0062] In the above implementation process, by setting the first modulation sub-electrode 221 and the second modulation sub-electrode 223 on both sides of the extension direction of the first modulation optical path 231, and the first modulation second sub-electrode 222 and the second modulation second sub-electrode 224 on both sides of the extension direction of the second modulation optical path 232, and connecting the first modulation electrode 211 to the first modulation sub-electrode 221 and the first modulation second sub-electrode 222 through the first bridging electrode 241, and connecting the second modulation electrode 212 to the second modulation sub-electrode 223 and the second modulation second sub-electrode 224 through the second bridging electrode 242. Therefore, whether there is a modulation signal in the first modulation electrode 211 or the second modulation electrode 212, the first modulation optical path 231 and the second modulation optical path 232 can be modulated, thereby improving the adjustment efficiency of the electro-optical modulator chip.

[0063] In a possible implementation, as Figure 3 、 Figure 4 shown, it includes: a plurality of optical modulation parts 200.

[0064] Among them, the first modulation electrode 211, the second modulation electrode 212, the first modulation optical path 231, and the second modulation optical path 232 penetrate through a plurality of optical modulation parts 200; the plurality of optical modulation parts 200 are sequentially arranged along the extension directions of the first modulation optical path 231 and the second modulation optical path 232.

[0065] Optionally, the setting positions of the first modulation sub-electrode 221, the first modulation second sub-electrode 222, the second modulation sub-electrode 223, and the second modulation second sub-electrode 224 in each optical modulation part 200 can be the same or different. The positions where the first bridging electrode 241 connects the first modulation sub-electrode 221 and the first modulation second sub-electrode 222 in each optical modulation part 200, and the positions where the second bridging electrode 242 connects the second modulation sub-electrode 223 and the second modulation second sub-electrode 224 can be the same or different. The specific setting methods of the first bridging electrode 241, the second bridging electrode 242, the first modulation sub-electrode 221, the first modulation second sub-electrode 222, the second modulation sub-electrode 223, and the second modulation second sub-electrode 224 in each optical modulation part 200 can be adjusted according to the actual situation.

[0066] The above-mentioned first modulation optical path 231 and second modulation optical path 232 can extend linearly in one direction. Correspondingly, the plurality of optical modulation parts 200 are also arranged in sequence in one direction.

[0067] Among them, the light in the first modulation optical path 231 and the light in the second modulation optical path 232 are combined and output from the port.

[0068] In the above implementation process, by setting a plurality of optical modulation parts 200 in the electro-optic modulator chip, the modulation range of the electro-optic modulator chip for light can be increased, and the application scenarios of the electro-optic modulator chip can be increased.

[0069] In a possible implementation manner, as Figure 3 、 Figure 4 shown, the optical modulation part 200 includes a plurality of segments, and the electro-optic modulator chip further includes: a bent optical path and a bent electrode.

[0070] Wherein, both ends of the bent electrode are respectively connected to one end of the first modulation electrode 211 and one end of the second modulation electrode 212 of two adjacent segments; both ends of the bent optical path are respectively connected to one end of the first modulation optical path 231 and one end of the second modulation optical path 232 of two adjacent segments.

[0071] Here, the plurality of segments are configured to be folded and arranged through the bent optical path and the bent electrode.

[0072] In an embodiment, if the first modulation optical path 231 and the second modulation optical path 232 are optical waveguides, then the bent optical path is a bent waveguide.

[0073] It should be understood that when the number of segments included in the optical modulation part 200 is different, the corresponding shape of the optical modulation part 200 may also be different. For example, "U" shape, "S" shape, etc. The shape of the optical modulation part 200 can be selected according to the actual situation.

[0074] Exemplarily, as Figure 3 shown, the optical modulation part 200 may be a structure including two segments. That is, the first segment of the optical modulation part M1 and the second segment of the optical modulation part M2. The first segment of the optical modulation part M1 and the second segment of the optical modulation part M2 can be connected through a bent optical path and a bent electrode. Among them, the first segment of the optical modulation part M1 may include three identical optical modulation parts 200. The second segment of the optical modulation part M2 may also include three identical optical modulation parts 200. The lengths of the first segment of the optical modulation part M1 and the second segment of the optical modulation part M2 may be equal ( Figure 3 shown in), or may not be equal.

[0075] As Figure 4As shown, the optical modulation section 200 may be a structure including three segments. That is, the first-segment optical modulation section M1, the second-segment optical modulation section M2, and the third-segment optical modulation section M3. The first-segment optical modulation section M1 and the second-segment optical modulation section M2 may be connected by a bent optical path and a bent electrode, and the second-segment optical modulation section M2 and the third-segment optical modulation section M3 may be connected by a bent optical path and a bent electrode. Among them, the first-segment optical modulation section M1 may include three identical optical modulation sections 200, the second-segment optical modulation section M2 may also include three identical optical modulation sections 200, and the third-segment optical modulation section M3 may also include three identical optical modulation sections 200. The lengths of the first-segment optical modulation section M1, the second-segment optical modulation section M2, and the third-segment optical modulation section M3 may be equal ( Figure 4 as shown in), or may not be equal.

[0076] The structure of the above-mentioned optical modulation section 200 is only exemplary, and the optical modulation section 200 may be a folded structure with any number of segments. The specific structure of the optical modulation section 200 may be adjusted according to actual situations.

[0077] In the above implementation process, when there are more segments in the optical modulation section 200, by setting a bent optical path and a bent electrode, the multi-terminal optical modulation section 200 is folded and arranged, which can reduce the requirements for the size of the electro-optic modulator chip, and while increasing the application scenarios of the electro-optic modulator chip, reduce the volume of the electro-optic modulator chip.

[0078] In a possible implementation manner, the first modulation electrode 211, the first modulation sub-electrode 221, the first modulation second sub-electrode 222, and the first bridging electrode 241 are single-layer metals of the same process or multi-layer metals of different processes; and / or the second modulation electrode 212, the second modulation sub-electrode 223, the second modulation second sub-electrode 224, and the second bridging electrode 242 are single-layer metals of the same process or multi-layer metals of different processes.

[0079] The single-layer metal of the same process here means that the connection is realized only through one layer of conductive material (such as a metal layer), and the multi-layer metal of different processes means that the connection between electrodes is realized by using two-layer structures or materials.

[0080] Among them, when the first modulation electrode 211, the first modulation sub-electrode 221, the first modulation second sub-electrode 222, and the first bridging electrode 241 are multi-layer metals of different processes; and / or the second modulation electrode 212, the second modulation sub-electrode 223, the second modulation second sub-electrode 224, and the second bridging electrode 242 are multi-layer metals of different processes, the layer structures of the first bridging electrode 241 and the second bridging electrode 242 may be arranged in the same direction or in different directions.

[0081] Exemplarily, as shown in Figure 5, Figure 5 The cross-sectional view shows that the first bridging electrode 241 is a double-layer bridge. Among them, the respective layer structures of the first bridging electrode 241 are arranged in a direction perpendicular to the first modulation electrode 211 and in a direction parallel to the first modulation electrode 211.

[0082] As Figure 6 shown, Figure 6 The cross-sectional view shows that the second bridging electrode 242 is a double-layer bridge. Among them, the respective layer structures of the second bridging electrode 242 are arranged in a direction perpendicular to the second modulation electrode 212 and in a direction parallel to the second modulation electrode 212.

[0083] The setting methods of the above-mentioned first bridging electrode 241 and second bridging electrode 242 are only exemplary, and the setting methods of the first bridging electrode 241 and second bridging electrode 242 can be adjusted according to actual situations.

[0084] In the above implementation process, by setting the electrodes connected to each other as single-layer metals of the same process, the setting difficulty of each electrode and the manufacturing consumables can be reduced, the connection difficulty between the modulation electrode and the modulation sub-electrode can be reduced, and at the same time, the material consumption of the bridging electrode can be reduced, saving the manufacturing cost of the electro-optical modulator chip. In addition, by setting the electrodes connected to each other as multi-layer metals of different processes, various changes in the positions of the modulation electrode and the modulation sub-electrode can be adapted, the flexible connection between the modulation electrode and the modulation sub-electrode can be realized, the flexibility of the electro-optical modulator chip structure setting can be increased, and the application scenarios of the electro-optical modulator chip can be increased.

[0085] In a possible implementation manner, the materials of the first modulation electrode 211, the second modulation electrode 212, the first bridging electrode 241, the second bridging electrode 242, the first modulation sub-electrode 221, the first second modulation sub-electrode 222, the second modulation sub-electrode 223, and the second second modulation sub-electrode 224 are metals or transparent conductive oxides.

[0086] Optionally, some or all of the materials of the first modulation electrode 211, the second modulation electrode 212, the first bridging electrode 241, the second bridging electrode 242, the first sub-modulation electrode 221, the second sub-modulation electrode 222, the first sub-second modulation electrode 223, and the second sub-second modulation electrode 224 are the same; or, the materials of the first modulation electrode 211, the second modulation electrode 212, the first bridging electrode 241, the second bridging electrode 242, the first sub-modulation electrode 221, the second sub-modulation electrode 222, the first sub-second modulation electrode 223, and the second sub-second modulation electrode 224 are all different. The materials of the first bridging electrode 241, the second bridging electrode 242, the first sub-modulation electrode 221, the second sub-modulation electrode 222, the first sub-second modulation electrode 223, and the second sub-second modulation electrode 224 can be selected according to the actual situation.

[0087] In the above implementation process, since both metals and transparent conductive oxides have good electrical conductivity, by setting the materials of the first modulation electrode 211, the second modulation electrode 212, the first bridging electrode 241, the second bridging electrode 242, the first sub-modulation electrode 221, the second sub-modulation electrode 222, the first sub-second modulation electrode 223, and the second sub-second modulation electrode 224 to be metals or transparent conductive oxides, the electrical conductivity of the first modulation electrode 211, the second modulation electrode 212, the first bridging electrode 241, the second bridging electrode 242, the first sub-modulation electrode 221, the second sub-modulation electrode 222, the first sub-second modulation electrode 223, and the second sub-second modulation electrode 224 can be improved, thereby improving the modulation efficiency of the electro-optic modulator chip.

[0088] In a possible implementation manner, as Figure 7 shown, the electro-optic modulator chip further includes: a substrate 300 and an insulating layer 400.

[0089] Among them, the insulating layer 400 is located on one side of the substrate 300; the first modulation electrode 211 and the second modulation electrode 212 are disposed on the outer surface of the insulating layer 400 away from the substrate 300 or inside the insulating layer 400; the first modulation optical path 231 and the second modulation optical path 232 are disposed inside the insulating layer 400.

[0090] The substrate 300 here is a board that supports the insulating layer 400 and the electronic components in the insulating layer 400. The substrate 300 includes one or more cavity structures.

[0091] Optionally, the cavity structure can be various shapes such as circular, square, irregular, etc. When the substrate 300 includes multiple cavity structures, the shapes of the multiple cavity structures can be the same or different. The shape of the cavity structure can be selected according to the actual situation.

[0092] Exemplarily, asFigure 7 As shown Figure 7 It is shown in Figure 7 that the substrate 300 includes two cavity structures, one of which is semi-circular and the other is square.

[0093] In one embodiment, as Figure 8 shown, the electro-optic modulator chip further includes: a first resistor 510 and a second resistor 520.

[0094] Among them, the first resistor 510 and the second resistor 520 are connected in series between the first modulation electrode 211 and the second modulation electrode 212.

[0095] The first resistor 510 and the second resistor 520 here are respectively arranged at one end of the first modulation electrode 211 and the second modulation electrode 212 far from the first input electrode 110 and the second input electrode 120.

[0096] In the above implementation process, since the refractive index of light transmission in air is low, by setting cavity structures in the substrate, the transmission loss can be reduced and the transmission quality can be improved.

[0097] In one possible implementation manner, the materials of the above-mentioned first modulation optical path 231 and second modulation optical path 232 are lithium niobate, barium titanate or lead zirconate titanate.

[0098] In the above implementation process, by setting the first modulation optical path 231 and the second modulation optical path 232 as materials having a modulation effect on light waves to form an electro-optic modulator, the light waves can be modulated efficiently and quickly, and the precise control and processing of optical signals can be realized.

[0099] In addition, the embodiment of the present application also provides an integrated optical chip, including: a laser, a detector and the electro-optic modulator chip in the above embodiment.

[0100] Among them, the laser is coupled to the electro-optic modulator chip, and the detector is connected to the electro-optic modulator chip.

[0101] The laser here is configured to emit optical signals, and the electro-optic modulator chip is configured to receive and modulate the input light and output modulated light.

[0102] The above-mentioned detector is configured to detect the modulated light.

[0103] In addition, the embodiment of the present application also provides an integrated chip, including: an electrical chip and the electro-optic modulator chip in the above embodiment.

[0104] The electrical chip here is connected to the electro-optic modulator chip by wire bonding or ball bonding.

[0105] In addition, the embodiment of the present application also provides an optical communication device, including: the electro-optic modulator chip in the above embodiment.

[0106] The above are only the preferred embodiments of the present application and are not intended to limit the present application. For those skilled in the art, various changes and modifications can be made to the present application. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application shall be included within the protection scope of the present application. It should be noted that similar reference numerals and letters represent similar items in the following drawings. Therefore, once an item is defined in one drawing, it does not need to be further defined and explained in subsequent drawings.

[0107] As mentioned above, the above is only the specific implementation manner of the present application, but the protection scope of the present application is not limited thereto. Any person skilled in the art within the technical scope disclosed by the present application can easily think of changes or replacements, which should all be covered within the protection scope of the present application. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims.

Claims

1. An electro - optic modulator chip, characterized in that, Comprising: An input electrode portion and an optical modulation portion; The input electrode portion includes: a first input electrode and a second input electrode; The optical modulation portion includes: a first modulation electrode, a second modulation electrode, a first sub-modulation electrode, a second sub-modulation electrode, a first sub-modulation electrode of the second modulation, a second sub-modulation electrode of the second modulation, a first modulation optical path, a second modulation optical path, a first bridging electrode, and a second bridging electrode; The first input electrode is connected to the first modulation electrode, and the first input electrode is configured to receive a first modulation signal; The second input electrode is connected to the second modulation electrode, and the second input electrode is configured to receive a second modulation signal; The first sub-modulation electrode, the second sub-modulation electrode, the first sub-modulation electrode of the second modulation, and the second sub-modulation electrode of the second modulation are respectively located on both sides of the extending direction of the first modulation optical path and the second modulation optical path; The first modulation electrode is connected to the first sub-modulation electrode and the second sub-modulation electrode through the first bridging electrode; The second modulation electrode is connected to the first sub-modulation electrode of the second modulation and the second sub-modulation electrode of the second modulation through the second bridging electrode; Wherein, the first modulation electrode and / or the second modulation electrode is configured to modulate light in the first modulation optical path and / or the second modulation optical path through some or all of the first sub-modulation electrode, the second sub-modulation electrode, the first sub-modulation electrode of the second modulation, and the second sub-modulation electrode of the second modulation.

2. The electro-optic modulator chip according to claim 1, wherein The first sub-modulation electrode and the first sub-modulation electrode of the second modulation are located on both sides of the extending direction of the first modulation optical path; The second sub-modulation electrode and the second sub-modulation electrode of the second modulation are located on both sides of the extending direction of the second modulation optical path; Wherein, the first modulation electrode and the second modulation electrode are configured to modulate light in the first modulation optical path through the first sub-modulation electrode and the first sub-modulation electrode of the second modulation; The first modulation electrode and the second modulation electrode are configured to modulate light in the second modulation optical path through the second sub-modulation electrode and the second sub-modulation electrode of the second modulation.

3. The electro-optical modulator chip according to claim 1, characterized in that, Comprising: A plurality of the optical modulation portions; The first modulation electrode, the second modulation electrode, the first modulation optical path, and the second modulation optical path penetrate through a plurality of the optical modulation portions; A plurality of the optical modulation portions are sequentially arranged along the extending direction of the first modulation optical path and the second modulation optical path.

4. The electro-optic modulator chip according to claim 3, wherein The optical modulation portion includes a plurality of segments, and the electro-optic modulator chip further includes: a bent optical path and a bent electrode; Both ends of the bent electrode are respectively connected to one end of the first modulation electrode and one end of the second modulation electrode of two adjacent segments; Both ends of the bent optical path are respectively connected to one end of the first modulation optical path and one end of the second modulation optical path of two adjacent segments; Wherein, a plurality of segments are configured to be folded and arranged through the bent optical path and the bent electrode.

5. The electro-optic modulator chip according to claim 1, wherein The first modulation electrode, the first sub-modulation electrode, the second sub-modulation electrode, and the first bridging electrode are single-layer metals in the same process or multi-layer metals in different processes; and / or The second modulation electrode, the first sub-modulation electrode of the second modulation, the second sub-modulation electrode of the second modulation, and the second bridging electrode are single-layer metals in the same process or multi-layer metals in different processes.

6. The electro-optic modulator chip according to claim 1, wherein the materials of the first modulation electrode, the second modulation electrode, the first bridging electrode, the second bridging electrode, the first sub-modulation electrode of the first modulation, the second sub-modulation electrode of the first modulation, the first sub-modulation electrode of the second modulation, and the second sub-modulation electrode of the second modulation are metals or transparent conductive oxides.

7. The electro-optical modulator chip according to claim 1, wherein It further includes:[[]] a substrate and an insulating layer; the insulating layer is located on one side of the substrate; the first modulation electrode and the second modulation electrode are disposed on the outer surface of the insulating layer away from the substrate or inside the insulating layer; the first modulation optical path and the second modulation optical path are disposed inside the insulating layer.

8. The electro-optical modulator chip according to claim 7, wherein Wherein,[[]] the substrate includes one or more cavity structures.

9. The electro-optic modulator chip according to any one of claims 1-8, wherein the materials of the first modulation optical path and the second modulation optical path are lithium niobate, barium titanate, or lead zirconate titanate.

10. An integrated optical chip, characterized in that It includes:[[]] a laser, a detector, and the electro-optic modulator chip according to any one of claims 1-9; the laser is coupled to the electro-optic modulator chip; wherein, the laser is configured to emit an optical signal, and the electro-optic modulator chip is configured to receive and modulate the input light and output modulated light; the detector is connected to the electro-optic modulator chip, and the detector is configured to detect the modulated light.

11. An integrated chip, characterized in that, It includes:[[]] an electrical chip, and the electro-optic modulator chip according to any one of claims 1-9; the electrical chip is connected to the electro-optic modulator chip by wire bonding or ball bonding.

12. An optical communication device, characterized in that, It includes:[[]] the electro-optic modulator chip according to any one of claims 1-9.

Images