Simulation method, system and device of device model, electronic equipment and storage medium
By separating process parameters and model cards in the simulation software and adjusting process parameters using the configuration window, the problem that the device model cannot adapt to process fluctuations is solved, and high-precision simulation and fast iterative chip design are achieved.
Patent Information
- Application Number
- CN202510215797.5
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-02-26
- Publication Date
- 2025-07-11
AI Technical Summary
The existing device models cannot adapt to process fluctuations, resulting in extended chip design cycles, low yields, waste of design resources and reduced reliability, and the model redevelopment time is long and the cost is high, so it cannot be quickly iterated.
By separating process parameters and model cards in the simulation software, receiving and transmitting process parameters using the process parameter configuration window, generating device models for simulation, and flexibly adjusting process parameters to meet different process conditions.
It improves simulation accuracy, shortens chip design cycle, improves yield and reliability, and achieves rapid iteration and flexible adaptation to process changes.
Smart Images
Figure CN120297212A_ABST
Abstract
Description
Technical Field
[0001] This application relates to the technical fields of semiconductors, device models, etc., and particularly relates to a simulation method, system, device, electronic device, and storage medium for a device model. Background Art
[0002] For an integrated circuit design company, there is a rather long period from design to tape-out. During this period, if the process fluctuations are large, the initial model library will not be able to reflect the true characteristics of the current process devices, resulting in deviations in the performance of the chips after design. Specifically, it is manifested in the following aspects: the yield is reduced. For example, if the chip is simulated according to an inaccurate model, the expected value is 1.8V, but the actual output of the chip is 1.6V. If the yield is judged according to 1.8V, the yield will be greatly reduced; in circuits with high-precision requirements, the error between the simulation value and the measured value increases; the difference between the design and the actual electrical performance of the chip leads to readjustment of the system or circuit scheme. In summary, process simulation deviation will lead to problems such as an extended chip design cycle, low yield, waste of design resources, and reduced reliability.
[0003] The current process parameters are nested in a single device model, resulting in the current version of the device model only being applicable to the current process conditions. If the process conditions are adjusted, the current version of the device model will deviate greatly from the actual tape-out process results and cannot meet the design requirements of high-precision and high-reliability circuits. However, if the model is redeveloped, it takes a long time, has a high cost, and delays the circuit design time, causing delays in chip design and unable to quickly iterate to form products. Summary of the Invention
[0004] To this end, the purpose of the embodiments of this application is to propose a simulation method, system, device, electronic device, storage medium, and computer program product for a device model, which can modify process parameters according to requirements during device model development, has high simulation accuracy, and avoids the disadvantages of traditional model development methods that are only applicable to single process conditions.
[0005] An embodiment of this application proposes a simulation method for a device model. The device model information is set in a target object. The method is applied to simulation software, and the simulation software includes a process parameter configuration window. The method includes: receiving process parameters through the process parameter configuration window; in the case of receiving the process parameters, calling the device model information, where the device model information includes multiple device sub-model information; generating an initial device model according to the device model information; transmitting the process parameters to the corresponding device sub-models in the initial device model to generate a device model; and performing simulation based on the device model.
[0006] Exemplarily, the simulation based on the device model includes: running the target object based on the device model to obtain a simulation result through simulation.
[0007] Exemplarily, the device model information includes at least one of device information, formula information corresponding to each device, and model adjustment parameter information; the device information includes at least one of transistor information, thyristor rectifier information, and diode information; the formula information corresponding to each device includes at least one of transistor formula information, thyristor rectifier formula information, and diode formula information; the model adjustment parameter information includes at least one of drain current information, source-drain voltage information, gate voltage information, temperature information, voltage bias information, and device size information.
[0008] Exemplarily, the simulation result includes a circuit function index value, and the method further includes: determining whether the circuit function index value meets a preset index value condition; wherein, the circuit function index value includes at least one of a circuit output voltage and a circuit output power.
[0009] Exemplarily, the method further includes: obtaining a difference between the circuit function index value and a preset circuit function index threshold; determining whether the difference meets a preset difference condition.
[0010] Exemplarily, the method further includes: in the case where the circuit function index value does not meet the preset index value condition, and / or the difference does not meet the preset difference condition, adjusting the model adjustment parameter information, and performing simulation based on the adjusted model adjustment parameter information.
[0011] Exemplarily, the process parameters include at least one of a gate oxide thickness, a thermistor, a gate resistance, a gate doping concentration, and a substrate doping concentration.
[0012] Another embodiment of the present application provides a simulation system for a device model. The device model information is set in a target object. The system includes: a device model; a simulation software, the simulation software includes a process parameter configuration window, and the simulation software is used to receive process parameters from outside the target object through the process parameter configuration window; in the case of receiving the process parameters, generating an initial device model according to the device model information; transmitting the process parameters to corresponding device sub-models in the initial device model to generate a device model; performing simulation based on the device model, wherein the device model information includes a plurality of device sub-model information.
[0013] Another embodiment of the present application provides a simulation device for a device model. The device model information is set in a target object. The device is applied to simulation software, and the simulation software includes a process parameter configuration window. The simulation device includes: a receiving module, configured to receive the process parameters through the process parameter configuration window; a calling module, configured to call the device model information when the process parameters are received, where the device model information includes a plurality of device sub-model information; a generating module, configured to generate an initial device model according to the device model information, and transmit the process parameters to corresponding device sub-models in the initial device model to generate a device model; and a simulation module, configured to perform simulation based on the device model.
[0014] Exemplarily, the simulation module is further configured to: run the target object based on the device model to perform simulation and obtain a simulation result.
[0015] Exemplarily, the simulation result includes circuit function index values. The device further includes a determining module, configured to determine whether the circuit function index values meet a preset index value condition.
[0016] Exemplarily, the determining module is further configured to: obtain a difference between the circuit function index values and a preset circuit function index threshold; and determine whether the difference meets a preset difference condition.
[0017] Exemplarily, the device further includes an adjusting module, configured to adjust model adjustment parameter information when the circuit function index values do not meet the preset index value condition and / or the difference does not meet the preset difference condition, and perform simulation based on the adjusted model adjustment parameter information.
[0018] Another embodiment of the present application provides an electronic device, including a memory and a processor. The memory stores a computer program, and when the processor executes the computer program, the steps of the method according to any of the above embodiments are implemented.
[0019] Another embodiment of the present application provides a computer-readable storage medium, on which a computer program is stored. When the computer program is executed by a processor, the steps of the method according to any of the above embodiments are implemented.
[0020] Another embodiment of the present application provides a computer program product, which includes instructions. When the instructions are executed by a processor of a computer device, the computer device can execute the steps of the method according to any of the above embodiments.
[0021] In the above embodiments, device model information is set in a target object, and a simulation method for a device model is applied to simulation software. The simulation software includes a process parameter configuration window, and the simulation method includes: receiving process parameters through the process parameter configuration window; invoking device model information when the process parameters are received, where the device model information includes multiple device sub-model information; generating an initial device model according to the device model information; transmitting the process parameters to corresponding device sub-models in the initial device model to generate a device model; and performing simulation based on the device model. The simulation method for the device model of the present invention can modify process parameters according to requirements during device model development, avoiding the drawback in traditional model development that the model and process parameters are bound, and the developed model is only applicable to a single process condition. BRIEF DESCRIPTION OF THE DRAWINGS
[0022] Figure 1 It is a flowchart of the simulation method for the device model provided by the embodiment of the present application;
[0023] Figure 2 It is a schematic diagram of the simulation system for the device model provided by the embodiment of the present application;
[0024] Figure 3 It is a schematic diagram of the simulation device for the device model provided by the embodiment of the present application;
[0025] Figure 4 It is a block diagram of the electronic device provided by the embodiment of the present application. DETAILED DESCRIPTION OF THE EMBODIMENTS
[0026] The embodiments of the present application will be described in detail below. The examples of the embodiments are shown in the drawings, where the same or similar reference numerals represent the same or similar elements or elements with the same or similar functions from beginning to end. The embodiments described below with reference to the drawings are exemplary and are intended to explain the present application, and should not be construed as a limitation to the present application.
[0027] There is a relatively long period from design to tape-out in an integrated circuit design company. During this period, if the process fluctuations are large, the initial model library will not be able to reflect the true characteristics of the current process devices, resulting in deviations in the performance of the chips after design. Specifically, it is manifested in the following aspects: the yield is reduced. For example, if the chip is simulated according to an inaccurate model, the expected value is 1.8V, but the actual output of the chip is 1.6V. If the yield is judged according to 1.8V, the yield will be greatly reduced; in circuits with high-precision requirements, the error between the simulation value and the measured value increases; there are discrepancies between the design and the actual electrical performance of the chip, resulting in readjustment of the system or circuit scheme. In summary, process simulation deviation will lead to problems such as extended chip design cycle, low yield, waste of design resources, and reduced reliability.
[0028] Based on this, the present application proposes a simulation method for a general flexible configuration device model, which meets the requirements of high chip processing accuracy, wide operating temperature range, etc. During the simulation, process parameters can be adjusted to solve many reliability problems such as the decrease in simulation accuracy and the reduction in yield caused by the simulation deviation of the model for the chip.
[0029] Figure 1 It is a flowchart of the device model simulation method according to an embodiment of the present application.
[0030] As an example, as Figure 1 shown, the device model simulation method includes:
[0031] S101, receiving process parameters through a process parameter configuration window.
[0032] S102, when the process parameters are received, calling device model information, where the device model information includes multiple device sub-model information.
[0033] S103, generating an initial device model according to the device model information.
[0034] S104, transmitting the process parameters to the corresponding device sub-model in the initial device model to generate a device model.
[0035] S105, performing a simulation based on the device model.
[0036] Exemplarily, in the present application, the device model information is set in a target object, and the target object can be a model card. The model card includes various information of the device model. It should be noted that the device model is used to describe the electrical characteristics of the device, is an electrical model of the device, and the existence form of the device model is the model card. In the traditional device model simulation process, the process parameters are nested in a single device model, which results in the current version of the device model being only applicable to the current process conditions. If the process conditions are adjusted, the current version of the device model has a large deviation from the actual wafer process results and cannot meet the design requirements of high-precision and high-reliability circuits. In this case, when changing the process parameters, the model needs to be re-developed. However, re-developing the model takes a long time, is costly, and delays the circuit design time, resulting in delays in chip design and inability to quickly iterate to form a product. In the present application, the design process parameters are separated from the model card.
[0037] Exemplarily, for a simulation circuit, a device model is first developed according to the circuit to be simulated. The device model developed in this application is separately set from the process parameters, and a process parameter configuration window is developed on the simulation software to receive process parameters. Subsequently, in the case of process parameter modification, there is no need to re-develop the device model. Just receive the process parameters through the process parameter configuration window of the simulation software.
[0038] Exemplarily, when the simulation software receives process parameters through the process parameter configuration window, it calls the device model information. It can be understood that when the simulation software receives process parameters, it calls the model card. A device model is generated based on the received process parameters and device model information, and simulation is performed based on the device model.
[0039] Exemplarily, the device model can be a SPICE model. The SPICE model is a model for circuit simulation. It is based on the working mechanism and physical characteristics of circuit components and can accurately simulate the working characteristics of the system at the circuit level. This model is mainly used for integrated circuit design. There may be different types of transistor information in the device model. For the convenience of the simulation process, the device model can be divided into multiple device sub-models. An initial device model is generated based on device information, formula information corresponding to each device, model adjustment parameter information, and other device model information. When the process parameter configuration window of the simulation module receives process parameters, the process parameters are transmitted to the corresponding device sub-model in the initial device model to generate a device model. The process parameter configuration window of the simulation module can call the corresponding device sub-model. In this way, process parameter designers can flexibly modify process parameters according to the current process situation.
[0040] In the simulation method of the device model of this application, the process parameters and the model card are separated. Therefore, this model card does not need to be bound to a certain fixed process condition and is no longer only applicable to products of a single process line. It can be applicable to a series of process line products, greatly broadening the flexibility and generality of the SPICE model.
[0041] As an example, traditional process parameters and the Model card are integrated. That is, after the process parameters are determined, only one type of simulation can be performed on the device model. For example, only the electrical characteristics of the device under a gate oxide thickness of 10 nm can be simulated, and the electrical characteristics under a gate oxide thickness tox of 8 nm, 7 nm, etc. cannot be flexibly simulated.
[0042] Exemplarily, the process parameters include at least one of gate oxide thickness, thermistor, gate resistance, gate doping concentration, and substrate doping concentration.
[0043] The process parameters of the present application are separated from the Model card. In the simulation software, since the process parameters are separated from the Model card, an external module or configuration window for setting the process parameters is installed on the simulation software. Designers can configure the process parameters in the configuration window. The process parameters include, for example, gate oxide thickness, thermistor, gate resistance, gate doping concentration, substrate doping concentration, etc., and also include gate resistance, source-drain resistance, gate doping concentration, etc. Of course, the process parameter configuration window can be added on the basis of the existing simulation software, or a new simulation software can be newly developed, which is configured with the process parameter configuration window.
[0044] The simulation software of this application adds a process parameter configuration module, which has the function of calling the model card and can accurately transmit the process parameters.
[0045] As an example, in actual application, which process line to use for tape-out is decided by the customer or designer. After the decision is made, the tape-out process factory provides the process parameters of the corresponding process line to the design company. In the initial stage of design, the process parameters are written into the plug-in module or configuration window of the simulation software, and then the corresponding model card is called for simulation. In the initial stage of process design, the process parameters will be adjusted at any time. Designers only need to modify the process parameters in time through the process parameter configuration window of the simulation software, and then they can use the current process model for simulation, which greatly saves time and improves efficiency.
[0046] As an example, the device model information includes at least one of device information, formula information corresponding to each device, and model adjustment parameter information;
[0047] The device information includes at least one of transistor information, silicon controlled rectifier information, and diode information;
[0048] The formula information corresponding to each device includes at least one of transistor formula information, silicon controlled rectifier formula information, and diode formula information;
[0049] The model adjustment parameter information includes at least one of drain current information, source-drain voltage information, gate voltage information, temperature information, voltage bias information, and device size information.
[0050] Exemplarily, the device information includes transistor information, thyristor information, diode information, etc. The transistor information includes, for example, bipolar transistor information, MOS transistor information, junction field effect transistor, etc. It can be understood that the device information is the component information used in the circuit. The formula information corresponding to each device may include the custom formula of each device, such as at least one of transistor formula information, thyristor formula information, and diode formula information. The model adjustment parameter information includes, for example, at least one of drain current information, source-drain voltage information, gate voltage information, temperature information, voltage bias information, and device size information, and also includes, for example, the adjustable parameters on the device formula. It should be noted that the model adjustment parameters are different from the process parameters.
[0051] As an example, performing simulation based on the device model includes: running the target object based on the device model to obtain the simulation result.
[0052] Exemplarily, the target object can be a model card. The device model information is set on the model card. Running the model card can be understood as running a code file to implement the simulation and obtain the simulation result.
[0053] Exemplarily, the process side timely provides the newly determined process parameters. The latest process parameters can be understood as the process parameters developed by the process side. Then the designer receives the latest process parameters. The designer configures the process parameters in the external module or configuration module of the simulation software. The simulation software accurately calls the device model, and at the same time transmits the process parameters to the corresponding device, runs the target object, and obtains the simulation result. If the process parameters are fine-tuned, the designer can change the process parameters and timely see the simulation result under the current process.
[0054] As an example, the simulation result includes the circuit function index value. The simulation method of the device model further includes: determining whether the circuit function index value meets the preset index value condition; wherein, the circuit function index value includes at least one of the circuit output voltage and the circuit output power.
[0055] Exemplarily, the simulation software receives the process parameters, accurately calls the device model, and at the same time transmits the process parameters to the corresponding device, runs the target object, and obtains the simulation result. The simulation result includes the circuit function index value, such as the circuit power, etc. It is judged whether the circuit function index value meets the preset index value condition. The circuit function index value includes at least one of the circuit output voltage and the circuit output power. For example, it is judged whether the circuit output power obtained by the simulation meets the rated power, etc. Also, for example, it is judged whether the circuit output voltage meets the voltage requirement value.
[0056] As an example, the simulation method of the device model further includes: obtaining the difference between the circuit function index value and the preset circuit function index threshold; determining whether the difference meets the preset difference condition.
[0057] Exemplarily, the present application can also judge the redundancy space of the circuit function index value according to the simulation result. Obtain the difference between the circuit function index value and the preset circuit function index threshold, where the preset circuit function index threshold can be understood as the upper limit or the lower limit of the index. Obtain the difference between the circuit function index value in the simulation result and its upper and lower limits, and judge whether the difference meets the preset difference condition. For example, the simulation result includes data of a certain index. For example, what is the upper limit of this index, and the redundancy space is the space between the current index data and this upper limit. The redundancy space can be as large as possible, so that the flexibility is high.
[0058] As an example, the simulation method of the device model further includes: when the circuit function index value does not meet the preset index value condition, and / or the difference does not meet the preset difference condition, adjusting the model adjustment parameter information, and performing simulation based on the adjusted model adjustment parameter information.
[0059] Exemplarily, when the circuit function index value does not meet the preset index value condition, and / or the difference does not meet the preset difference condition, it means that the simulation result is not ideal or does not meet the requirements. The model adjustment parameter information can be adjusted. For example, the drain current information, source-drain voltage information, gate voltage information, temperature information, voltage bias information, device size information, etc. are adjusted. Perform simulation based on the adjusted model adjustment parameter information until the simulation result meets the requirements.
[0060] The simulation method of the device model of the present application has the following advantages:
[0061] 1. High simulation accuracy: If the required process parameters need to be adjusted, the current version of the device model cannot adjust the process parameters in time, resulting in a large deviation from the actual chip fabrication process result and unable to meet the design requirements of high-precision and high-reliability circuits. The present application can realize the function of adjusting process parameters in time.
[0062] 2. High efficiency, accelerating the upgrade and iteration of products, and seizing the market. If the current version of the device model needs to adjust process parameters, it needs to be re-developed, which takes a long time, high cost, and delays the circuit design time, resulting in chip design delays and unable to quickly iterate to form products.
[0063] 3. Suitable for the development of process models that need to be quickly upgraded and iterated, avoiding the disadvantages of traditional model development methods that are only applicable to single process conditions.
[0064] The present application also proposes a simulation system for a device model.
[0065] As an example, such asFigure 2 As shown, the device model information is set in the target object. The simulation system of the device model includes: a device model 201; a simulation software 202, which includes a process parameter configuration window. The simulation software is used to receive process parameters from outside the target object through the process parameter configuration window; when the process parameters are received, call the device model information, generate an initial device model according to the device model information; transmit the process parameters to the corresponding device sub-models in the initial device model to generate a device model; perform simulation based on the device model, where the device model information includes multiple device sub-model information.
[0066] The present application also proposes a simulation device for a device model.
[0067] As an example, the device model information is set in the target object. The simulation device of the device model is applied to the simulation software, which includes a process parameter configuration window. As Figure 3 shown, the simulation device of the device model includes: a receiving module 301, which is used to receive process parameters through the process parameter configuration window; a calling module 302, which is used to call the device model information when the process parameters are received, where the device model information includes multiple device sub-model information; a generating module 303, which is used to generate an initial device model according to the device model information and transmit the process parameters to the corresponding device sub-models in the initial device model to generate a device model; a simulation module 304, which is used to perform simulation based on the device model.
[0068] Exemplarily, the simulation module 304 is further used to: run the target object based on the device model to perform simulation to obtain a simulation result.
[0069] Exemplarily, the simulation result includes circuit function index values. The simulation device of the device model further includes a determining module, and the determining module is used to determine whether the circuit function index values meet the preset index value conditions.
[0070] Exemplarily, the determining module is further used to: obtain the difference between the circuit function index values and the preset circuit function index threshold; determine whether the difference meets the preset difference conditions.
[0071] Exemplarily, the simulation device of the device model further includes an adjusting module, and the adjusting module is used to adjust the model adjustment parameter information when the circuit function index values do not meet the preset index value conditions and / or the difference does not meet the preset difference conditions, and perform simulation based on the adjusted model adjustment parameter information.
[0072] The present application also proposes a computer-readable storage medium.
[0073] In this embodiment, a computer program is stored on a computer-readable storage medium. When the computer program is executed by a processor, the steps of the simulation method of the above-mentioned device model are implemented.
[0074] Figure 4 It is a block diagram of an electronic device provided by an embodiment of the present application.
[0075] An embodiment of the present application provides an electronic device, including a memory and a processor. The memory stores a computer program. When the processor executes the computer program, the simulation method of the above-mentioned device model is implemented.
[0076] As Figure 4 shown, for ease of understanding, an embodiment of the present application shows a specific electronic device.
[0077] The electronic device is intended to represent various forms of digital computers, such as, laptop computers, desktop computers, workstations, personal digital assistants, servers, blade servers, mainframe computers, and other suitable computers. The electronic device can also represent various forms of mobile devices, such as, personal digital processors, cellular phones, smart phones, wearable devices, and other similar computing devices. The components shown herein, their connections and relationships, and their functions are merely examples and are not intended to limit the implementation of the present disclosure described and / or claimed herein.
[0078] As Figure 4 shown, the device includes a computing unit 401, which can execute various appropriate actions and processes according to a computer program stored in a read-only memory (ROM) 402 or a computer program loaded from a storage unit 408 into a random access memory (RAM) 403. In the RAM 403, various programs and data required for the operation of the electronic device can also be stored. The computing unit 401, the ROM 402, and the RAM 403 are connected to each other through a bus 404. An input / output (I / O) interface 405 is also connected to the bus 404.
[0079] Multiple components in the electronic device are connected to the I / O interface 405. The multiple components include: an input unit 406, such as a keyboard, a mouse, etc.; an output unit 407, such as various types of displays, speakers, etc.; a storage unit 408, such as a magnetic disk, an optical disk, etc.; and a communication unit 409, such as a network card, a modem, a wireless communication transceiver, etc. The communication unit 409 allows the electronic device to exchange information / data with other devices through a computer network such as the Internet and / or various telecommunication networks.
[0080] The computing unit 401 can be various general-purpose and / or special-purpose processing components with processing and computing capabilities. Some examples of the computing unit 401 include, but are not limited to, a central processing unit (CPU), a graphics processing unit (GPU), various special-purpose artificial intelligence (AI) computing chips, various computing units running machine learning model algorithms, a digital signal processor (DSP), and any suitable processor, controller, microcontroller, etc. The computing unit 401 executes the various methods described above, such as the simulation method of the device model. For example, in some embodiments, the simulation method of the device model can be implemented as a computer software program that is tangibly incorporated in a machine-readable medium, such as the storage unit 408. In some embodiments, part or all of the computer program can be loaded and / or installed onto the electronic device via the ROM 402 and / or the communication unit 409. When the computer program is loaded into the RAM 403 and executed by the computing unit 401, the simulation method of the device model described above can be executed. Alternatively, in other embodiments, the computing unit 401 can be configured to execute the simulation method of the device model in any other suitable manner (e.g., by means of firmware).
[0081] It should be noted that the logic and / or steps represented in the flowchart or described in other ways herein, for example, can be considered as a defined sequence list of executable instructions for implementing logical functions, and can be specifically implemented in any computer-readable medium for use by an instruction execution system, apparatus, or device (such as a computer-based system, a system including a processor, or other systems that can fetch and execute instructions from the instruction execution system, apparatus, or device), or in combination with these instruction execution systems, apparatus, or devices. For the purposes of this application, a "computer-readable medium" can be any device that can contain, store, communicate, propagate, or transport a program for use by or in combination with an instruction execution system, apparatus, or device. More specific examples (non-exhaustive list) of computer-readable media include the following: an electrical connection portion with one or more wirings (electronic device), a portable computer diskette (magnetic device), a random access memory (RAM), a read-only memory (ROM), an erasable programmable read-only memory (EPROM or flash memory), an optical fiber device, and a portable compact disc read-only memory (CDROM). Additionally, a computer-readable medium can even be paper or other suitable media on which a program can be printed, because the program can be obtained electronically, for example, by optically scanning the paper or other media, followed by editing, interpretation, or other suitable processing as necessary, and then stored in a computer memory.
[0082] It should be understood that each part of the present application can be implemented by hardware, software, firmware, or a combination thereof. In the above embodiments, multiple steps or methods can be implemented by software or firmware stored in a memory and executed by a suitable instruction execution system. For example, if implemented by hardware, as in another embodiment, any one or a combination of the following technologies well known in the art can be used: discrete logic circuits having logic gate circuits for implementing logical functions on data signals, application specific integrated circuits having appropriate combinational logic gate circuits, programmable gate arrays (PGAs), field programmable gate arrays (FPGAs), and the like.
[0083] In the description of the present application, the description referring to terms such as "one embodiment", "some embodiments", "example", "specific example", or "some examples", etc. means that the specific features, structures, materials, or characteristics described in connection with the embodiment or example are included in at least one embodiment or example of the present application. In the present application, the schematic expressions of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials, or characteristics described can be combined in a suitable manner in any one or more embodiments or examples.
[0084] In the description of the present application, it should be understood that the orientation or positional relationship indicated by terms such as "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc. is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present application and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus should not be construed as a limitation to the present application.
[0085] In addition, the terms "first", "second", etc. used in the embodiments of the present application are only for descriptive purposes, and cannot be understood as indicating or implying relative importance, or implicitly indicating the number of technical features indicated in this embodiment. Thus, the features defined with the terms "first", "second", etc. in the embodiments of the present application can explicitly or implicitly indicate that at least one such feature is included in this embodiment. In the description of the present application, the meaning of the word "plurality" is at least two or more than two, such as two, three, four, etc., unless otherwise specifically defined in the embodiment.
[0086] In this application, unless otherwise clearly specified or limited in the embodiments, terms such as "installed", "connected", "coupled", and "fixed" in the embodiments shall be understood in a broad sense. For example, the connection can be a fixed connection, a detachable connection, or integrated. Understandably, it can also be a mechanical connection, an electrical connection, etc. Of course, it can also be directly connected, or indirectly connected through an intermediate medium, or it can be the communication inside two elements, or the interaction relationship between two elements. For those of ordinary skill in the art, the specific meanings of the above terms in this application can be understood according to the specific implementation situations.
[0087] In this application, unless otherwise clearly specified and limited, the first feature being "on" or "under" the second feature can be that the first and second features are in direct contact, or the first and second features are indirectly in contact through an intermediate medium. Moreover, the first feature being "above", "over", and "on top of" the second feature can be that the first feature is directly above or obliquely above the second feature, or merely indicates that the first feature has a higher horizontal height than the second feature. The first feature being "under", "below", and "beneath" the second feature can be that the first feature is directly below or obliquely below the second feature, or merely indicates that the first feature has a lower horizontal height than the second feature.
[0088] Although the embodiments of the present application have been shown and described above, it can be understood that the above embodiments are exemplary and should not be construed as limiting the present application. Those of ordinary skill in the art can make changes, modifications, substitutions, and variations to the above embodiments within the scope of the present application.
Claims
1. A simulation method for a device model, characterized in that Device model information is set in a target object. The method is applied to simulation software, which includes a process parameter configuration window. The method includes: Receiving process parameters through the process parameter configuration window; Invoking the device model information when the process parameters are received, where the device model information includes multiple device sub-model information; Generating an initial device model according to the device model information; Transmitting the process parameters to the corresponding device sub-models in the initial device model to generate a device model; Performing simulation based on the device model.
2. The simulation method of the device model according to claim 1, characterized in that The performing simulation based on the device model includes: Running the target object based on the device model to perform simulation to obtain a simulation result.
3. The simulation method of the device model according to claim 1, characterized in that The device model information includes at least one of device information, formula information corresponding to each device, and model adjustment parameter information; The device information includes at least one of transistor information, thyristor rectifier information, and diode information; The formula information corresponding to each device includes at least one of transistor formula information, thyristor rectifier formula information, and diode formula information; The model adjustment parameter information includes at least one of drain current information, source-drain voltage information, gate voltage information, temperature information, voltage bias information, and device size information.
4. The simulation method of the device model according to claim 2, characterized in that, The simulation result includes circuit function index values. The method further includes: Determining whether the circuit function index values meet a preset index value condition; Wherein, the circuit function index values include at least one of circuit output voltage and circuit output power.
5. The simulation method of the device model according to claim 4, characterized in that, The method further includes: Obtaining the difference between the circuit function index values and a preset circuit function index threshold; Determining whether the difference meets a preset difference condition.
6. The simulation method of the device model according to claim 5, characterized in that, The method further includes: When the circuit function index values do not meet the preset index value condition, and / or the difference does not meet the preset difference condition, adjusting the model adjustment parameter information and performing simulation based on the adjusted model adjustment parameter information.
7. The simulation method of the device model according to claim 1, characterized in that The process parameters include at least one of gate oxide thickness, thermistor, gate resistance, gate doping concentration, and substrate doping concentration.
8. A simulation system for a device model, characterized in that, Device model information is set in a target object. The system includes: A device model; Simulation software, which includes a process parameter configuration window. The simulation software is used to receive process parameters from outside the target object through the process parameter configuration window; when the process parameters are received, invoke the device model information, generate an initial device model according to the device model information; transmit the process parameters to the corresponding device sub-models in the initial device model to generate a device model; perform simulation based on the device model, where the device model information includes multiple device sub-model information.
9. A simulation device for a device model, characterized in that Device model information is set in a target object. The device is applied to simulation software, which includes a process parameter configuration window. The simulation device includes: A receiving module, configured to receive the process parameters through the process parameter configuration window; A calling module, configured to call the device model information when receiving the process parameters, where the device model information includes a plurality of device sub-model information; A generating module, configured to generate an initial device model according to the device model information, and transmit the process parameters to corresponding device sub-models in the initial device model to generate a device model; A simulation module, configured to perform a simulation based on the device model.
10. The simulation device of the device model according to claim 9, characterized in that, The simulation module is further configured to: run the target object based on the device model to perform a simulation to obtain a simulation result.
11. The simulation device of the device model according to claim 10, characterized in that, The simulation result includes circuit function index values, and the apparatus further includes a determination module, where the determination module is configured to determine whether the circuit function index values meet a preset index value condition.
12. The simulation device of the device model according to claim 11, characterized in that, The determination module is further configured to: obtain a difference between the circuit function index values and a preset circuit function index threshold; determine whether the difference meets a preset difference condition.
13. The simulation device of the device model according to claim 12, characterized in that, The apparatus further includes an adjustment module, where the adjustment module is configured to adjust model adjustment parameter information and perform a simulation based on the adjusted model adjustment parameter information when the circuit function index values do not meet the preset index value condition, and / or the difference does not meet the preset difference condition.
14. An electronic device, comprising a memory and a processor, the memory storing a computer program, characterized in that, When the processor executes the computer program, the steps of the method according to any one of claims 1-7 are implemented.
15. A computer-readable storage medium having a computer program stored thereon, characterized in that, When the computer program is executed by the processor, the steps of the method according to any one of claims 1-7 are implemented.