High-reliability chip resistor with high-voltage-resistant characteristic

Abstract

The invention relates to an electronic component, in particular to a high-reliability chip resistor with high-voltage resistance, which comprises a substrate layer, end electrodes are arranged at two ends of the substrate layer, a resistance layer is overlapped between the end electrodes, and a protective layer is arranged on the resistance layer. The resistance layer is composed of a resistance wire and a resistance adjusting area, wherein the resistance wire is located on the surface of the substrate layer and composed of resistance materials which are arranged in a sinuous sinusoidal mode. According to the invention, a sinusoidal line layout is adopted to increase the distance of the part with large voltage difference of the resistor wire, so that the breakdown voltage at two ends is improved, and the voltage resistance of the resistor is greatly improved.

Description

Technical Field

[0001] The present invention relates to electronic components, especially resistors with high-voltage resistance characteristics. Background Art

[0002] In resistor production, in order to achieve the designed miniaturization, high-voltage surface mount resistors achieve the high-voltage resistance characteristic by increasing the distance between resistor conductors per unit area. The common practice is to use serpentine or bow-shaped circuits as Figure 1 shown to achieve the purpose. There is a parallel distribution between the conductors of the above serpentine and bow-shaped circuits, or there is a situation where the widths of different regions are different, resulting in uneven voltage difference / relative distance distribution between resistors at different positions. This will lead to weak points in voltage resistance in the designed path, resulting in the product being unable to withstand higher voltages, and at the same time, there is a greater risk of reliability failure. In the existing design, the resistor wire layout is based on Paschen's law, with adjacent resistor wires arranged in parallel and the relative area between adjacent resistor wires increased. In order to increase the voltage resistance performance, only the spacing can be increased, which affects the wiring. Summary of the Invention

[0003] In order to solve the problems of the high-voltage resistance characteristic of existing resistors and the poor voltage resistance strength caused by the existing wiring method, the present invention adopts a new wiring method to provide a highly reliable surface mount resistor with high-voltage resistance characteristics.

[0004] The technical solution adopted by the present invention is as follows: a highly reliable surface mount resistor with high-voltage resistance characteristics, including a base layer, with end electrodes at both ends of the base layer, a resistor layer is lapped between the end electrodes, a protective layer is provided on the resistor layer, and the resistor layer is composed of resistor wires formed by resistor materials arranged in a meandering form in a sine line on the surface of the base layer and a trimming area. Breakdown voltage = voltage resistance strength × distance. The voltage resistance strength is related to the material between the two. In this application, the sine line layout is adopted to increase the distance of the part with large voltage difference between resistor wires, improve the breakdown voltage at both ends, and greatly increase the voltage resistance performance of the resistor.

[0005] Furthermore, the wide-range resistance value adjustment of the resistor is achieved through the selection of the thickness and material of the resistor layer. The layout of the span and the number of corrugations of the resistor wire conforms to the relationship y = k * sin(Ax + B), where x is the abscissa position relative to the resistor device, y is the ordinate position relative to the resistor device (the resistor device is placed horizontally, with left and right electrodes), where A is the sine wave frequency constant (how many sine waveforms there are per unit length), B is the sine wave offset angle / starting angle coordinate, and k is the half height of the sine wave. At the same time, an equal-width design is carried out according to this sine curve (equal-width along the tangent direction of the center position of this sine curve). Finally, the trimming is achieved by performing equal-width cutting along the edge of the sine line to approach the set resistance value.

[0006] As one of the preferred solutions for a highly reliable surface mount resistor with high voltage resistance characteristics, the trimming area is a connecting resistor material arranged inside the peak or / and valley, and the trimming value is achieved by cutting this part.

[0007] As one of the preferred solutions for a highly reliable surface mount resistor with high voltage resistance characteristics, the voltage distance between the inner side of the end electrode and the adjacent peak / valley is increased through a chamfer design.

[0008] As one of the preferred solutions for a highly reliable surface mount resistor with high voltage resistance characteristics, the trimming area is arranged on one side and / or both sides of the resistance wire, and the trimming area is composed of conventional parallel resistance wirings and the cutting area therebetween.

[0009] As one of the preferred solutions for a highly reliable surface mount resistor with high voltage resistance characteristics, the trimming area is arranged in the middle of the resistance wire, and the trimming area is composed of conventional parallel resistance wirings and the cutting area therebetween.

[0010] The beneficial effects of the present invention are as follows: The present application uses a sine line layout to increase the distance of the part with a large voltage difference between the resistance wires, improving the breakdown voltage at both ends and greatly increasing the voltage resistance performance of the resistor. Through the design of an equal-width sine resistance line or a mixed sine equal-width resistance trace, the resistor has a larger span at the position with a larger voltage difference, enabling the voltage resistance of the resistor to be further increased. The resistance line is designed with a sine waveform, making the overall resistance segment round and avoiding the decrease in the voltage resistance performance at the tip. In some solutions, the laser trimming area is set at the peak and valley positions, that is, the positions with a small voltage difference, to avoid the influence of the trimming area on the trimming range of the resistor. The chamfer design effectively increases the voltage difference between the end electrode and the chamfer position. Description of the Drawings

[0011] Figure 1 Schematic diagram of the wiring scheme of the existing resistor.

[0012] Figure 2 Schematic diagram of the structure of Embodiment 1 of the present application.

[0013] Figure 3 Schematic diagram of the stack of the present application and the conventional scheme in the case of an equal-width resistance wire.

[0014] Figure 4 Schematic diagram of the trimming scheme of the present application.

[0015] Figure 5 Schematic diagram of the structure of Embodiment 2 of the present application.

[0016] Figure 6 Schematic diagram of the structure of Embodiment 3 of the present application.

[0017] Figure 7 Schematic diagram of the structure of Embodiment 4 of the present application.

[0018] Figure 8 This is the schematic structural diagram of Embodiment 5 of the present application. Detailed implementation manners

[0019] The present invention will be further described below with reference to specific drawings.

[0020] As Figures 2 to 4 shown: Embodiment 1: A highly reliable chip resistor with high-voltage resistance characteristics, including a base layer 1, end electrodes 2 at both ends of the base layer 1, a resistance layer is lapped between the end electrodes 2, a protective layer is provided on the resistance layer, and the resistance layer is composed of a resistance wire 31 formed by a resistance material arranged in a sine line in a meandering form on the surface of the base layer 1, and an adjustment resistance area 4. The breakdown voltage = withstand voltage strength × distance, and the withstand voltage strength is related to the materials between the two. In this application, a sine line layout is adopted for the resistance wire 31 of the resistance layer, and the distance of the part with a large pressure difference is increased, improving the breakdown voltage at both ends and greatly increasing the withstand voltage performance of the resistor. It can be seen from Figure 3 that the distance D2 at the part with the largest pressure difference in the original design is significantly smaller than D1 in this design.

[0021] In this embodiment, the wide-range resistance value adjustment of the resistor is achieved by adjusting the thickness and material selection of the resistance layer, the resistance wire 31 of the resistance layer. The adjustment resistance area is at the edge of the sine line, and the resistance value is adjusted by cutting equally wide along the edge of the sine line to approach the set resistance value. Figure 3 The yellow and red parts in are the cutting areas of the adjustment resistance wire. The adjustment resistance sequence is to adjust the resistance along the yellow curve, the red curve, and the green curve step by step to approach the resistance adjustment.

[0022] Embodiment 2: As Figure 5 shown, this embodiment only adjusts the adjustment resistance area compared with Embodiment 1. The adjustment resistance area 4 is a connecting resistance material B arranged inside the wave crest or / and wave trough. The resistance value is adjusted by cutting this part. When wiring, it is arranged in blocks inside, and directly cut during resistance adjustment to form a cutting mark like the C line segment in the figure) to reduce its cross-sectional area, thereby reducing the resistance value.

[0023] Embodiment 3: As Figure 6 shown, this embodiment only adjusts the adjustment resistance area compared with Embodiment 1. The adjustment resistance area 4 is arranged on one side of the resistance wire 31 of the resistance layer. The adjustment resistance area 4 is composed of a conventional parallel resistance wiring 6 and the cutting area therebetween. Adopting a conventional resistance adjustment scheme can adapt to existing processing equipment and processes, and can be conveniently adjusted directly from the existing ones. The scheme has a lower implementation cost.

[0024] Embodiment 4: As Figure 7 shown, this embodiment only adjusts the adjustment resistance area compared with Embodiment 1. The adjustment resistance area 4 is arranged in the middle of the resistance wire 31 of the resistance layer. The adjustment resistance area 4 is composed of a conventional parallel resistance wiring 6 and the cutting area therebetween. It can be conveniently adjusted directly from the existing ones. The scheme has a lower implementation cost.

[0025] Example 5: As Figure 8 shown: Based on the above example, the end electrodes at both ends are processed. The inner side of the end electrode 2 is designed with a chamfer 5 to increase the voltage distance from its adjacent peak / trough. Specifically, it can be achieved by modifying the printing template or the masking template when arranging the end electrodes.

[0026] It should be noted that in this application, the terms of peak and trough relationships are only used in the drawings to clearly distinguish two positions, and do not imply any such actual relationship or order of these entities. And the term "comprising", "including" or any other variant thereof is intended to cover non-exclusive inclusion, so that a process, method, article or device comprising a series of elements includes not only those elements but also other elements not expressly listed, or also includes elements inherent to such process, method, article or device. Without further limitation, an element defined by the statement "comprising an..." does not exclude the presence of additional identical elements in the process, method, article or device comprising the element.

Claims

1. A highly reliable chip resistor with high-voltage resistance characteristics, comprising a base layer, end electrodes are provided at both ends of the base layer, a resistance layer is overlapped between the end electrodes, and a protective layer is provided on the resistance layer, characterized in that: The resistance layer is composed of a resistance wire made of a resistance material arranged in a meandering form like a sine wave on the surface of the base layer and a trimming area.

2. The highly reliable surface mount resistor with high voltage resistance characteristics according to claim 1, wherein: The trimming area is a connecting resistance material provided inside the peak or / and valley, and the trimming value is achieved by cutting this part.

3. The highly reliable surface mount resistor with high voltage resistance characteristics according to claim 1, characterized in that: The curve of the resistance wire conforms to the relationship y = k * sin(Ax + B), where x is the abscissa position relative to the resistance device, y is the ordinate position relative to the resistance device. Among them, A is the sine wave frequency constant, B is the sine wave offset angle / starting angle coordinate, and k is the half height of the sine wave. The resistance layer is designed with a constant width according to this sine curve.

4. The highly reliable chip resistor with high-voltage resistance characteristics according to claim 2, wherein: Trimming is achieved by equally-width cutting along the edge of the sine line to approximate the set resistance value.

5. The highly reliable surface mount resistor with high voltage resistance characteristics according to any one of claims 1 to 4, characterized in that: The inner side of the end electrode has a chamfer design to increase the voltage distance from its adjacent peak / valley.

6. The highly reliable surface mount resistor with high voltage resistance characteristics according to claim 1, wherein: The trimming area is arranged on one side and / or both sides of the resistance wire. The trimming area is composed of conventional parallel resistance wirings and the cutting areas therebetween.

7. The highly reliable chip resistor with high-voltage resistance characteristics according to claim 1, characterized in that: The trimming area is arranged in the middle of the resistance wire. The trimming area is composed of conventional parallel resistance wirings and the cutting areas therebetween.

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