Sum-difference network architecture

Abstract

The invention belongs to the technical field of microwave and millimeter wave communication, and particularly relates to a sum-difference network architecture, which comprises a signal input layer, a middle lamination layer and a signal output layer, the middle pressing layer is located between the signal input layer and the signal output layer; a signal transmission layer is arranged between the signal input layer and the middle pressing layer, and a signal transmission layer is arranged between the middle pressing layer and the signal output layer; and the signal transmission layer adopts a magic T framework. By optimizing the thickness of the interlayer metal plate and the dielectric constant of the dielectric substrate, the overall size is smaller than that of a traditional waveguide network; the dielectric substrate adopts the three-dimensional fusion of the microstrip and the waveguide, and has the performance advantages of the microstrip and the waveguide.

Description

Technical Field

[0001] The present invention belongs to the technical field of microwave and millimeter-wave communication, and specifically relates to a sum-difference network architecture. Background Art

[0002] During the transceiver process of a phased array radar, in order to accurately measure the position of the detected object, it is necessary to form different sum-difference beams; and the necessary device for forming sum-difference beams is a sum-difference network. The sum-difference network is divided into a digital sum-difference network and an analog sum-difference network. Analog sum-difference has become the mainstream of the existing sum-difference network due to its characteristics of no delay, simple structure, and no need for AD conversion. The analog sum-difference network can be further divided into a waveguide sum-difference network and a microstrip sum-difference network. Among them, although the microstrip sum-difference network has a compact structure and is easy to integrate, it has high high-frequency losses, low power capacity, and limited in-band performance; the waveguide sum-difference network has advantages such as low loss and high power capacity, but it has a large volume and complex processing, and it is difficult to meet the miniaturization requirements of modern communication systems. The existing technology attempts to combine the advantages of microstrip and waveguide through a hybrid structure, but the design is complex and the performance improvement is limited.

[0003] In view of this, the present application is specifically proposed. Summary of the Invention

[0004] The technical problem to be solved by the present invention is that the existing sum-difference network with a hybrid structure has a complex structure, a narrow frequency band, and high losses.

[0005] To solve the above technical problems, the present invention is achieved through the following technical solutions:

[0006] A sum-difference network structure is proposed, including: a signal input layer, an intermediate lamination layer, and a signal output layer; the intermediate lamination layer is located between the signal input layer and the signal output layer; signal transmission layers are included between the signal input layer and the intermediate lamination layer and between the intermediate lamination layer and the signal output layer; the signal transmission layer adopts a magic-T architecture.

[0007] Further, the signal input layer includes: two metal plates and a dielectric substrate located between the two metal plates; the signal output layer includes: two metal plates and a dielectric substrate located between the two metal plates.

[0008] Further, the magic-T architecture includes: an H arm, an E arm, and a metal slot coupling structure; the H arm is used to achieve the transmission of signals with equal amplitude and the same phase; the E arm is used to achieve the transmission of signals with equal amplitude and opposite phases; the metal slot coupling structure is used to achieve efficient coupling of signals between layers; the metal slot coupling structure penetrates the dielectric substrates of the signal input layer and the signal output layer.

[0009] Further, the dielectric substrate includes a turning structure for reducing signal transmission loss.

[0010] Furthermore, the steering structure is a copper column or an aluminum column embedded in the dielectric substrate.

[0011] Furthermore, the sum-difference network structure also includes a switching structure for inputting energy and outputting energy; the switching structure is connected to the dielectric substrate.

[0012] Furthermore, the transition structure includes a gradient microstrip line and a matching probe.

[0013] Furthermore, the gradient microstrip line is an exponential gradient structure or a Chebyshev gradient structure; the matching probe is located at the end of the gradient microstrip line, and the matching probe is a multi-step ladder structure.

[0014] Compared with the prior art, the present invention has the following advantages and beneficial effects: by optimizing the thickness of the interlayer metal plate and the dielectric constant of the dielectric substrate, the overall volume is smaller than that of the traditional waveguide network; the dielectric substrate adopts a three-dimensional fusion of microstrip and waveguide, combining the performance advantages of both. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] In order to more clearly illustrate the technical solutions of the exemplary embodiments of the present invention, the drawings required for use in the embodiments will be briefly introduced below. It should be understood that the following drawings only show certain embodiments of the present invention and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other related drawings can be obtained based on these drawings without paying creative work.

[0016] Figure 1 A schematic diagram of the positional relationship between the signal input layer, the intermediate lamination layer and the signal output layer in the sum-difference network structure provided in an embodiment of the present invention;

[0017] Figure 2 A schematic diagram of the structure of the Magic T architecture provided by an embodiment of the present invention;

[0018] Figure 3 A schematic diagram of the positional relationship between a dielectric substrate and a steering structure provided in an embodiment of the present invention;

[0019] Figure 4 A schematic diagram of the positional relationship between the tapered microstrip line and the matching probe in the transition structure provided by an embodiment of the present invention.

[0020] Marks and corresponding parts names in the attached drawings:

[0021] 1-signal input layer, 2-intermediate lamination layer, 3-signal output layer, 4-signal transmission layer, 5-metal plate, 6-dielectric substrate, 7-transfer structure, 61-turning structure, 71-gradient microstrip line, 72-matching probe. DETAILED DESCRIPTION

[0022] In order to make the objectives, technical solutions and advantages of the present invention more clearly understood, the present invention will be further described in detail below with reference to the embodiments and the accompanying drawings. The illustrative embodiments and descriptions thereof of the present invention are only used to explain the present invention and shall not be construed as limiting the present invention.

[0023] In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. However, it will be apparent to those of ordinary skill in the art that the present invention does not have to be practiced with these specific details. In other embodiments, well-known structures, circuits, materials or methods have not been specifically described in order to avoid obscuring the present invention.

[0024] Throughout the specification, references to "one embodiment", "an embodiment", "one example" or "an example" mean that a particular feature, structure or characteristic described in connection with the embodiment or example is included in at least one embodiment of the present invention. Thus, the phrases "one embodiment", "an embodiment", "one example" or "an example" appearing throughout the specification do not necessarily all refer to the same embodiment or example. In addition, the particular features, structures or characteristics may be combined in any suitable combination and / or sub-combination in one or more embodiments or examples. In addition, those of ordinary skill in the art should understand that the drawings provided herein are for illustrative purposes only and are not necessarily drawn to scale. The term "and / or" used herein includes any and all combinations of one or more of the associated listed items.

[0025] In the description of the present invention, the orientation or positional relationship indicated by terms such as "front", "rear", "left", "right", "upper", "lower", "vertical", "horizontal", "high", "low", "inner", "outer", etc. is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operate in a specific orientation, and thus should not be construed as limiting the protection scope of the present invention.

[0026] Embodiment: As Figure 1 and Figure 2As shown in the figure, a sum-difference network structure provided by an embodiment of the present invention is composed of a signal input layer 1, an intermediate lamination layer 2, a signal output layer 3, and a signal transmission layer 4. Among them, the signal input layer 1 is composed of two metal plates 5 sandwiching a dielectric substrate 6; similarly, the signal output layer 3 is also composed of two metal plates 5 sandwiching a dielectric substrate 6; the intermediate lamination layer 2 is a single metal plate 5 for laminating the signal input layer 1 and the signal output layer 3; the signal transmission layer 4 adopts a magic-T structure, which has a metal slot penetrating through the dielectric substrate 6 of the signal input layer 1 and the dielectric substrate 6 of the signal output layer 3, and realizes signal transmission between the signal input layer 1 and the signal output layer 3 through metal slot coupling. The overall structural relationship is: the intermediate lamination layer 2 is located between the signal input layer 1 and the signal output layer 3, and the signal transmission layer 4 is located between the signal input layer 1 and the intermediate lamination layer 2 and between the intermediate lamination layer 2 and the signal output layer 3.

[0027] Further, the magic-T structure is a waveguide structure commonly used in microwave engineering, mainly used for applications such as power distribution, power synthesis, and signal mixing. The magic-T structure is a combination of an E-plane T-junction and an H-plane T-junction, consisting of four ports: Port 1 is the H-arm, which is the input / output port of the H-plane T-junction; Port 2 is the E-arm, which is the input / output port of the E-plane T-junction. Ports 3 and 4 are two symmetric collinear ports for inputting or outputting signals. The working principle of the magic-T structure is based on the propagation characteristics of electromagnetic waves in the waveguide, specifically as follows: when a signal is input to the H-arm, it is equally distributed to Ports 3 and 4, and the phases are the same. Since the H-arm is orthogonal to the E-arm, there is no output at the E-arm end; when a signal is input to the E-arm, it is equally distributed to Ports 3 and 4, but the phases are opposite (differing by 180 degrees). Since the H-arm is orthogonal to the E-arm, there is no output at the H-arm; when a signal is input to Port 3 or Port 4, it will be respectively distributed to the H-arm and the E-arm.

[0028] Refer to Figure 3 , a turning structure 61 for reducing signal transmission loss is embedded in the dielectric substrate 6. The turning structure 21 is a metal column, made of a material with good conductivity (such as copper or aluminum); by optimizing the position and quantity of the metal columns in the dielectric substrate 3, it is ensured that the loss of turning transmission is close to 0 (the typical value is lower than 0.1 dB).

[0029] Continue to refer to Figure 4 , the sum-difference network structure further includes an adapter structure 7 for inputting energy and outputting energy; the adapter structure 7 is connected to the dielectric substrate 6. The adapter structure 7 is composed of a tapered microstrip line 71 and a matching probe 72. Among them, the tapered microstrip line 71 adopts an exponential taper structure or a Chebyshev taper structure to achieve impedance matching within a wide frequency band and reduce signal reflection. The matching probe 72 is located at the end of the tapered microstrip line 71 and adopts a multi-stage stepped structure to achieve efficient connection with the external circuit and reduce signal loss.

[0030] In summary, a sum-difference network structure provided in this embodiment combines a microstrip sum-difference network and a waveguide sum-difference network through substrate integrated waveguide technology, has performance superior to that of a traditional microstrip sum-difference network within the operating bandwidth, and the overall size is reduced by 30%. The operating frequency band covers 33 GHz to 36 GHz, and the bandwidth performance is superior to that of a traditional microstrip network. It is applicable to signal processing and transmission in microwave and millimeter-wave communication systems, radar systems, and satellite communication systems.

[0031] The specific embodiments described above further elaborate on the purpose, technical solutions, and beneficial effects of the present invention. It should be understood that the above are only specific embodiments of the present invention and are not used to limit the protection scope of the present invention. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principles of the present invention shall be included in the protection scope of the present invention.

Claims

1. A sum-difference network structure, characterized in that, include: A signal input layer (1), an intermediate lamination layer (2) and a signal output layer (3); the intermediate lamination layer (2) is located between the signal input layer (1) and the signal output layer (3); a signal transmission layer (4) is included between the signal input layer (1) and the intermediate lamination layer (2) and between the intermediate lamination layer (2) and the signal output layer (3); the signal transmission layer (4) adopts a magic T structure.

2. The sum-difference network structure according to claim 1, wherein The signal input layer (1) comprises: two layers of metal plates (5) and a dielectric substrate (6) located between the two layers of metal plates (5); the signal output layer (3) comprises: two layers of metal plates (5) and a dielectric substrate (6) located between the two layers of metal plates (5).

3. The sum-difference network structure according to claim 2, characterized in that, The magic T architecture comprises: an H arm, an E arm and a metal gap coupling structure; the H arm is used to realize equal-amplitude in-phase signal transmission; the E arm is used to realize equal-amplitude reverse signal transmission; the metal gap coupling structure is used to realize efficient coupling of inter-layer signals; the metal gap coupling structure penetrates the dielectric substrate (6) of the signal input layer (1) and the dielectric substrate (6) of the signal output layer (3).

4. The sum-difference network structure according to claim 2, characterized in that, The dielectric substrate (6) includes a deflection structure (21) for reducing signal transmission loss.

5. The sum-difference network structure according to claim 4, wherein The steering structure (21) is a copper column or an aluminum column embedded in the dielectric substrate (6).

6. The sum-difference network structure according to claim 2, characterized in that, It also includes a switching structure (7) for inputting energy and outputting energy; the switching structure (7) is connected to the dielectric substrate (6).

7. The sum-difference network structure according to claim 6, wherein The switching structure (7) comprises a gradient microstrip line (71) and a matching probe (72).

8. The sum-difference network structure according to claim 7, wherein, The gradient microstrip line (71) is an exponential gradient structure or a Chebyshev gradient structure; the matching probe (72) is located at the end of the gradient microstrip line (71), and the matching probe (72) is a multi-level ladder structure.

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