Precision circuit board for ultrahigh-frequency multilayer memory bank

Abstract

The invention relates to the technical field of semiconductors, in particular to a precise circuit board with an ultrahigh-frequency multilayer memory bank, which comprises a functional circuit surface layer, a high-speed signal layer, an upper grounding layer, an upper waveguide insulating layer, a power supply layer, a lower waveguide insulating layer, a lower grounding layer and a functional circuit bottom layer, the functional circuit surface layer, the high-speed signal layer, the upper grounding layer, the upper waveguide insulating layer, the power supply layer, the lower waveguide insulating layer, the lower grounding layer and the functional circuit bottom layer are sequentially stacked from top to bottom, a conductive groove is formed in the high-speed signal layer in a penetrating mode, a conductive column is arranged in the conductive groove in a matched mode, and waveguide grooves are formed in the tops of the upper waveguide insulating layer and the lower waveguide insulating layer. And a waveguide tube is arranged in the waveguide groove. According to the scheme provided by the invention, by arranging the trapezoidal conductive columns and utilizing the function of dispersing high-frequency current distribution by the asymmetric cross sections of the conductive columns, the skin effect is reduced, the signal integrity is improved, and the effect of optimizing the high-speed signal transmission time sequence consistency is achieved through the obliquely arranged waveguide tubes.

Description

Technical Field

[0001] This application relates to the field of semiconductor technology, and particularly to a precision circuit board for ultra-high frequency multi-layer memory modules. Background Art

[0002] The precision circuit board of a multi-layer memory module refers to a printed circuit board with a multi-layer structure, which is usually used in high-end memory modules. The design features of this circuit board include multi-layer bonding, high line density, and fine aperture to provide better electrical performance and stability. A multi-layer PCB refers to a circuit board with multiple layers bonded together, and each layer is connected through a resin insulation substrate and a metal circuit layer. Common multi-layer PCBs include 6-layer, 8-layer, and 10-layer, etc. The design of these layers is to improve the electrical capacity and pressure-bearing capacity of the PCB. Specifically, the top and bottom layers are usually functional circuit layers, where the most important circuits and components are arranged, and the middle layers are ground layers and power supply layers, which are used for shielding interference and signal correction.

[0003] With the development of electronic devices towards high frequency, high integration, and miniaturization, as the core carrier, the design of multi-layer circuit boards needs to meet multiple strict requirements such as signal integrity, thermal management efficiency, electromagnetic compatibility, and mechanical stability. However, there are significant technical bottlenecks in the structural design and functional coordination of traditional multi-layer circuit boards. The traditional conductive vias are cylindrical vias. Due to the symmetric design, the skin effect of high-frequency signals is prone to intensify, especially in the frequency band above 10 GHz, the signal loss increases. The multi-layer board relies on planar wiring to achieve high-speed signal transmission, and it is easy to have phase delay problems in long-distance transmission. Moreover, the heat dissipation solution of traditional multi-layer circuit boards relies on passive heat conduction and cannot dynamically adjust the contact pressure according to the real-time temperature rise, resulting in a reduction in the heat dissipation effect of multi-layer circuit boards, causing the multi-layer circuit boards to downshift and reducing the operating speed of the precision circuit boards of multi-layer memory modules. Summary of the Invention

[0004] To overcome the problems existing in the related art, this application provides a precision circuit board for ultra-high frequency multi-layer memory modules. By setting conductive columns and utilizing their function of dispersing the high-frequency current distribution with an asymmetric cross-section, the skin effect is reduced, thereby reducing the signal loss of the memory module and achieving an improvement in signal integrity. And by obliquely setting the waveguide made of copper-ceramic composite and utilizing its phase compensation and dielectric gradient functions, the control of transmission delay deviation and the compression of impedance fluctuation are achieved, and the effect of optimizing the timing consistency of high-speed signal transmission is achieved.

[0005] To achieve the above object, this application mainly adopts the following technical solutions. A precision circuit board for ultra-high frequency multi-layer memory modules includes:

[0006] The surface layer of the functional circuit, the high-speed signal layer, the upper grounding layer, the upper waveguide insulating layer, the power supply layer, the lower waveguide insulating layer, the lower grounding layer, and the bottom layer of the functional circuit;

[0007] The surface layer of the functional circuit, the high-speed signal layer, the upper grounding layer, the upper waveguide insulating layer, the power supply layer, the lower waveguide insulating layer, the lower grounding layer, and the bottom layer of the functional circuit are stacked in sequence from top to bottom;

[0008] The high-speed signal layer is provided with conductive grooves running through it, and conductive posts are adaptively arranged in the conductive grooves;

[0009] Waveguide grooves are provided at the tops of both the upper waveguide insulating layer and the lower waveguide insulating layer, and waveguide pipes are arranged inside the waveguide grooves;

[0010] The power supply layer is provided with heat-conducting posts running through and fixedly connected, the heat-conducting posts are fixedly connected to the high-speed signal layer, the upper grounding layer, and the upper waveguide insulating layer through and through, and metal louvers are provided on the top of the surface layer of the functional circuit.

[0011] Preferably, louver through-grooves are provided at positions close to the edges on both sides parallel to the top of the surface layer of the functional circuit, and the metal louvers are fixedly connected to the inner sides of the louver through-grooves.

[0012] Preferably, the metal louvers are made of shape memory metal, the rotation angle of the metal louvers is 0° - 45°, the width of the metal louvers is 0.1 mm, and the spacing is 0.05 mm.

[0013] Preferably, a conductive plug post is fixedly connected to the bottom of the conductive post, a conductive socket slot is provided on the top of the upper grounding layer, and the conductive plug post is adaptively inserted into the conductive socket slot.

[0014] Preferably, shock-absorbing grooves are provided on the top of the bottom layer of the functional circuit, and MR elastomers are filled in the shock-absorbing grooves.

[0015] Preferably, the cross-section of the conductive post is trapezoidal, the conductive post is formed by laser-induced chemical deposition process, the material of the conductive post is made of metallic copper, the diameter of the top end of the conductive post is 70% of the diameter of the bottom end, and the tolerance is ±3 μm.

[0016] Preferably, the conductive grooves are distributed in a honeycomb shape on the high-speed signal layer, and the displacement between every two conductive grooves in the X / Y direction is 50 μm.

[0017] Preferably, the depth of the waveguide groove is 0.2 mm, the width is 0.8 mm, the waveguide groove is formed by reactive ion etching, the waveguide pipe is a copper-aluminum oxide ceramic composite pipe, and the waveguide groove is inclined at an axis of 15° with respect to the conductive groove.

[0018] Preferably, the heat-conducting post is made of a Ni-Ti alloy core, and a copper plating layer is provided on the outer layer of the Ni-Ti alloy core.

[0019] Preferably, the upper grounding layer is a copper-aluminum composite substrate, the lower grounding layer is a copper-graphene reinforced substrate, and the upper waveguide insulating layer and the lower waveguide insulating layer are made of ceramic composite materials.

[0020] The technical solution provided by this application may include the following beneficial effects:

[0021] By setting trapezoidal conductive posts and utilizing their function of dispersing high-frequency current distribution with asymmetric cross-sections, the skin effect is reduced, thereby reducing the signal loss of the memory module and achieving improved signal integrity. Additionally, by obliquely setting waveguides made of copper-ceramic composites and utilizing their phase compensation and dielectric gradient functions, the transmission delay deviation control and impedance fluctuation compression are achieved, resulting in optimized timing consistency for high-speed signal transmission. By contacting the shape memory alloy heat conducting posts with the waveguides and utilizing the self-adaptive function of thermal expansion deformation of the heat conducting posts, the dynamic regulation of the interface contact pressure and the reduction of thermal resistance are realized, thereby improving the heat dissipation efficiency of the memory module circuit board and enhancing the long-term thermal cycle stability of the memory module circuit board. By opening and closing the metal shutters driven by piezoelectricity and utilizing the thermal feedback function to open and close the metal shutters, the dynamic balance between the shielding effectiveness and the heat dissipation airflow efficiency is achieved, resulting in the simultaneous suppression of electromagnetic leakage and overheating risks under extreme working conditions and improving the stability of the memory module circuit board during use.

[0022] It should be understood that the above general description and the following detailed description are only exemplary and explanatory, and cannot limit this application. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] By describing the exemplary embodiments of this application in more detail in conjunction with the drawings, the above and other objectives, features, and advantages of this application will become more apparent. Among them, in the exemplary embodiments of this application, the same reference numerals generally represent the same components.

[0024] Figure 1 is a schematic structural diagram of a multi-layer memory module precision circuit board shown in an embodiment of this application;

[0025] Figure 2 is a schematic cross-sectional structural diagram of a multi-layer memory module precision circuit board shown in an embodiment of this application;

[0026] Figure 3 is a schematic structural diagram of the surface layer of the functional circuit shown in an embodiment of this application;

[0027] Figure 4 is a schematic structural diagram of the high-speed signal layer shown in an embodiment of this application;

[0028] Figure 5 is a schematic structural diagram of the conductive post shown in an embodiment of this application;

[0029] Figure 6 It is a schematic structural diagram of the upper grounding layer shown in the embodiments of the present application;

[0030] Figure 7 It is a schematic structural diagram of the position of the upper waveguide insulating layer shown in the embodiments of the present application;

[0031] Figure 8 It is a schematic structural diagram of the bottom layer of the functional circuit shown in the embodiments of the present application;

[0032] In the figure: 1, the surface layer of the functional circuit; 2, the high-speed signal layer; 3, the upper grounding layer; 4, the upper waveguide insulating layer; 5, the power supply layer; 6, the lower waveguide insulating layer; 7, the lower grounding layer; 8, the bottom layer of the functional circuit; 9, the conductive groove; 10, the conductive column; 11, the waveguide groove; 12, the waveguide; 13, the heat conducting column; 14, the metal shutter; 15, the shutter through groove; 16, the conductive plug; 17, the conductive socket; 18, the shock-absorbing groove; 19, the MR elastomer. Detailed implementation manners

[0033] The preferred embodiments of the present application will be described in more detail below with reference to the accompanying drawings. Although the preferred embodiments of the present application are shown in the drawings, it should be understood that the present application can be implemented in various forms and should not be limited by the embodiments set forth herein. On the contrary, these embodiments are provided to make the present application more thorough and complete, and to fully convey the scope of the present application to those skilled in the art.

[0034] The terms used in the present application are only for the purpose of describing specific embodiments and are not intended to limit the present application. The singular forms "a", "the" and "said" used in the present application and the appended claims are also intended to include the plural forms unless the context clearly indicates otherwise. It should also be understood that the term "and / or" used herein refers to and includes any or all possible combinations of one or more of the associated listed items.

[0035] It should be noted that when an element is referred to as being "fixed to" or "disposed on" another element, it can be directly on the other element or indirectly on the other element. When an element is referred to as being "connected to" another element, it can be directly connected to the other element or indirectly connected to the other element.

[0036] In the description of the present application, it should be understood that the orientation or positional relationship indicated by the terms "thickness", "upper", "lower", "front", "rear", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc. is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present application and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of the present application.

[0037] In the description of the present application, it should be noted that unless otherwise clearly defined and limited, the terms "installed", "connected", and "coupled" should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, and it can be the communication between two components or the interaction relationship between two components. For those of ordinary skill in the art, the specific meanings of the above terms in the present application can be understood according to specific circumstances.

[0038] The technical solutions of the embodiments of the present application will be described in detail below with reference to the accompanying drawings.

[0039] See Figures 1 to 8 , a precision circuit board for a high-frequency multi-layer memory module, comprising:

[0040] A functional circuit surface layer 1, a high-speed signal layer 2, an upper ground layer 3, an upper waveguide insulating layer 4, a power supply layer 5, a lower waveguide insulating layer 6, a lower ground layer 7, and a functional circuit bottom layer 8;

[0041] The functional circuit surface layer 1, the high-speed signal layer 2, the upper ground layer 3, the upper waveguide insulating layer 4, the power supply layer 5, the lower waveguide insulating layer 6, the lower ground layer 7, and the functional circuit bottom layer 8 are stacked in sequence from top to bottom;

[0042] The functional circuit surface layer 1, the high-speed signal layer 2, the upper ground layer 3, the upper waveguide insulating layer 4, the power supply layer 5, the lower waveguide insulating layer 6, the lower ground layer 7, and the functional circuit bottom layer 8 are communicatively connected to each other through signal lines;

[0043] The high-speed signal layer 2 is provided with a conductive groove 9, and a conductive column 10 is fitted in the conductive groove 9;

[0044] Waveguide grooves 11 are formed at the tops of the upper waveguide insulating layer 4 and the lower waveguide insulating layer 6, and waveguide tubes 12 are arranged inside the waveguide grooves 11;

[0045] The power supply layer 5 is provided with a heat conducting column 13 that penetrates and is fixedly connected, and the heat conducting column 13 penetrates and is fixedly connected to the high-speed signal layer 2, the upper ground layer 3, and the upper waveguide insulating layer 4. A metal shutter 14 is provided on the top of the functional circuit surface layer 1.

[0046] Specifically, shutter through grooves 15 are formed at positions near the edges on both sides parallel to the top of the functional circuit surface layer 1, and the metal shutter 14 is fixedly connected to the inside of the shutter through grooves 15.

[0047] Specifically, the metal shutter 14 is made of a shape memory alloy material, the rotation angle of the metal shutter 14 is 0° - 45°, the width of the metal shutter 14 is 0.1 mm, and the spacing is 0.05 mm.

[0048] Specifically, a conductive plug 16 is fixedly connected to the bottom of the conductive column 10, and a conductive socket 17 is formed at the top of the upper ground layer 3. The conductive plug 16 is adaptively inserted into the conductive socket 17.

[0049] Specifically, a damping groove 18 is formed at the top of the bottom layer 8 of the functional circuit, and an MR elastomer 19 is filled in the damping groove 18.

[0050] Specifically, the cross-section of the conductive column 10 is trapezoidal. The conductive column 10 is formed by a laser-induced chemical deposition process. The material of the conductive column 10 is made of copper metal. The diameter of the top end of the conductive column 10 is 70% of the diameter of the bottom end, and the tolerance is ±3μm.

[0051] Specifically, the conductive grooves 9 are distributed in a honeycomb shape on the high-speed signal layer 2, and the displacement between every two conductive grooves 9 in the X / Y direction is 50μm.

[0052] Specifically, the depth of the waveguide groove 11 is 0.2mm and the width is 0.8mm. The waveguide groove 11 is formed by reactive ion etching. The waveguide 12 is a copper-aluminum oxide ceramic composite tube. The waveguide groove 11 is inclined at an angle of 15° with the axis of the conductive groove 9.

[0053] Specifically, the heat conducting column 13 is made of a Ni-Ti alloy core, and a copper plating layer is provided on the outer layer of the Ni-Ti alloy core.

[0054] Specifically, the upper ground layer 3 is a copper-aluminum composite substrate, the lower ground layer 7 is a copper-graphene reinforced substrate, and the upper waveguide insulating layer 4 and the lower waveguide insulating layer 6 are made of a ceramic composite material.

[0055] Example 1

[0056] In this embodiment, to solve the skin effect loss and long-distance phase delay in high-frequency signal transmission during the use of the precision circuit board of a multi-layer memory module, an asymmetric stepped structure is constructed between the high-speed signal layer 2 and the upper waveguide insulation layer 4 of the precision circuit board of the multi-layer memory module. The top width of the cross-section of the conductive column 10 is 80 μm, the bottom width is 100 μm, and the height of the width is 150 μm. The groove body is pre-opened on the high-speed signal layer 2 according to the specifications of the conductive column 10. The conductive groove 9 is processed on the high-speed signal layer 2 by reactive ion etching. Subsequently, using the laser deposition forming process, the conductive column 10 is installed into the groove body on the surface of the high-speed signal layer 2. After the conductive column 10 is installed, through the stepped dislocation layout, the adjacent conductive columns are offset by 50 μm in the X / Y direction, forming a honeycomb-like arrangement design. Using its function of dispersing the high-frequency current distribution with an asymmetric cross-section, the skin effect is reduced, and the signal transmission loss occurring during the use of the memory module is reduced. The trapezoidal cross-section of the conductive column 10 disperses the current density and reduces the edge skin effect. The trapezoidal cross-section guides the high-frequency current to gather towards the center through the narrow top edge, reducing the edge current density. The stepped dislocation reduces the adjacent signal crosstalk. The stepped dislocation layout breaks the symmetric electromagnetic field distribution, and the coupling capacitance of the adjacent signal paths is reduced. Furthermore, when the precision circuit board of this multi-layer memory module is used for communication, it is more stable and the signal transmission loss rate is reduced. Then, a waveguide groove 11 is opened in the upper waveguide insulation layer 4, and a waveguide 12 is embedded inside the waveguide groove 11. The waveguide 12 is a copper-aluminum oxide ceramic composite tube. The axis of the waveguide 12 forms a 15° angle with the center line of the conductive column 10. Using the inclined layout of the waveguide 12 and the dislocation of the conductive column 10 to form a complementary electromagnetic field distribution, the phase shift caused by the difference in the transmission path is offset.

[0057] In this embodiment, a 10 GHz high-frequency signal is input from the surface layer 1 of the functional circuit, transmitted to the signal line of the high-speed signal layer 2 through the trapezoidal conductive column 10, and the signal enters the waveguide 12 of the upper waveguide insulation layer 4 through the stripline. The 15° inclined waveguide path compensates for the transmission delay. After compensation, the signal is output to the bottom layer 8 of the functional circuit through the stepped conductive column 10, completing low-loss and low-phase deviation transmission.

[0058] In this embodiment, through the conductive column 10 of the high-speed signal layer 2 and the waveguide 12 of the upper waveguide insulation layer 4, the signal loss of the precision circuit board of the multi-layer memory module can be reduced by using the conductive column 10, meeting the requirements of the millimeter-wave antenna, and the delay deviation is controlled within ±0.1 ps / mm, improving the high-speed signal synchronization accuracy, making the signal synchronization more stable and efficient. By using the staggered and inclined settings of the conductive column 10 and the waveguide 12, 25% of the wiring space of the precision circuit board of the multi-layer memory module can be released, supporting multi-channel waveguide integration, improving the usage efficiency of the precision circuit board of the multi-layer memory module, and ensuring the stable transmission of the signal.

[0059] Embodiment 2

[0060] In this embodiment, in order to solve the risk of thermal runaway that easily occurs in the current memory module circuit board, a heat conduction column 13 is provided. The outer layer of the heat conduction column 13 is copper-plated. The heat conduction column 13 penetrates through the high-speed signal layer 2, the upper ground layer 3, the upper waveguide insulation layer 4, and the power supply layer 5. Through the high-efficiency heat conduction effect of the heat conduction column 13, the heat generated during the operation of the power supply layer 5 can be quickly absorbed, then transmitted upward to the surface layer 1 of the functional circuit, and then discharged from the position of the metal louvers 14, preventing the risk of thermal runaway in the precision circuit board of the multi-layer memory module and improving the stability of the use of the precision circuit board of the multi-layer memory module.

[0061] In this embodiment, in order to solve the conflict between electromagnetic shielding and heat dissipation efficiency of the current memory module circuit board, the surface layer 1 of the functional circuit is provided with movable metal louvers 14 with a memory resilience effect. The high temperature is conducted to the position of the metal louvers 14 through the heat conduction column 13. The metal louvers 14 are bent under the effect of high-temperature piezoelectricity. At this time, the metal louvers 14 are bent to an inclined state, and the heat conducted by the heat conduction column 13 can be discharged through the metal louvers 14, preventing the electromagnetic shielding and heat dissipation efficiency from affecting each other due to a completely enclosed circuit board, thereby affecting the working temperature of the precision circuit board of the multi-layer memory module, causing the precision circuit board of the multi-layer memory module to downshift or the signal transmission efficiency to decrease, and improving the stability of the use of the precision circuit board of the multi-layer memory module.

[0062] In this embodiment, when the temperature of the precision circuit board of the multi-layer memory module rises during operation, the heat conduction column 13 expands and elongates, and the thermal expansion signal triggers the metal louvers 14. The opening angle of the metal louvers 14 can still maintain the shielding effectiveness of the surface layer 1 of the functional circuit, and at the same time, the heat dissipation air flow efficiency is improved. As the temperature drops, the metal louvers 14 are reset through the characteristics of the shape memory metal, and the shielding effectiveness is completely restored, avoiding electromagnetic leakage at low temperatures. Through such thermal control, the precision circuit board of the multi-layer memory module can be effectively adjusted in real time under different temperature conditions, without affecting the electromagnetic shielding effect of the precision circuit board of the multi-layer memory module, and at the same time improving the heat dissipation effect of the precision circuit board of the multi-layer memory module, reducing the problem of reduced working efficiency of the precision circuit board of the multi-layer memory module caused by high temperature.

[0063] In this embodiment, the high operating temperature of the power supply layer 5 is exported through the heat conduction column 13, the thermal resistance can be reduced in time, local hot spots can be avoided, and the operating temperature of the multi-layer memory module precision circuit board can be stabilized. Then, by adjusting the angle of the metal louvers 14, the heat dissipation efficiency can be improved, and the electromagnetic shielding effectiveness can be dynamically adjusted synchronously. However, the problem of electromagnetic shielding failure of the multi-layer memory module precision circuit board caused by heat dissipation will not occur, ensuring that the multi-layer memory module precision circuit board can maintain the corresponding electromagnetic shielding effect while ensuring heat dissipation, ensuring the more stable use of the multi-layer memory module precision circuit board. Through the absorption and discharge of high temperature by the heat conduction column 13, the contact pressure volatility of the multi-layer memory module precision circuit board under heat circulation is <3%, and the service life is extended to 100,000 cycles.

[0064] Embodiment III

[0065] In this embodiment, in order to reduce the micro-motion wear and electromagnetic impedance drift of the waveguide 12 caused by mechanical vibration of the multi-layer memory module precision circuit board, a damping groove 18 is opened on the surface of the bottom layer 8 of the functional circuit, and an MR elastomer 19 is filled in the damping groove 18. The MR elastomer 19 is a silicone-based magnetorheological elastomer. When the magnetic field is enhanced, the hardness of the MR elastomer 19 increases, and the vibration energy is converted into heat energy through the friction of the molecular chains inside the MR elastomer 19, and the vibration attenuation efficiency is improved, converting mechanical vibration into heat energy dissipation, thereby reducing the impact of mechanical vibration on the multi-layer memory module precision circuit board and ensuring the stability of the use of the multi-layer memory module precision circuit board. At the same time, an integrated electromagnetic coil is installed at the bottom of the damping groove 18, and the electromagnetic coil can generate a controllable magnetic field of 0–500 mT to adjust the stiffness of the elastomer, so that the MR elastomer 19 can cope with different mechanical vibration frequencies. At different vibration frequencies, through the magnetic field changes caused by vibration, the electromagnetic coil can make corresponding electromagnetic adjustments according to the magnetic field changes. Here, a Hall sensor is built inside the bottom layer 8 of the functional circuit close to the electromagnetic coil, and the magnetic field fluctuations caused by vibration are detected by the Hall sensor. The Hall sensor is an application of existing technology, and the electromagnetic sensor is a micro sensor, so that the MR elastomer 19 can be adjusted to the corresponding hardness to resist the mechanical vibration of the multi-layer memory module precision circuit board.

[0066] In this embodiment, when the magnetic field of the multi-layer memory module precision circuit board is enhanced due to mechanical vibration, the hardness of the MR elastomer 19 increases, converting mechanical vibration into heat energy, and then the heat energy is dissipated and discharged through the bottom layer 8 of the functional circuit, realizing the treatment of mechanical vibration, ensuring the stable use of the multi-layer memory module precision circuit board, reducing the damage caused by mechanical vibration to the multi-layer memory module precision circuit board, and improving the service life of the multi-layer memory module precision circuit board. At the same time, due to the magnetic field changes caused by mechanical vibration of the multi-layer memory module precision circuit board, at this time, the electromagnetic field is adjusted by the electromagnetic coil, and thus the negative impact brought by the magnetic field changes can be offset, improving the use stability of the multi-layer memory module precision circuit board.

[0067] In this embodiment, when external vibration is introduced into the multi-layer memory module precision circuit board, the Hall sensor triggers the electromagnetic coil, and the electromagnetic coil applies a magnetic field with a corresponding value. The MR elastomer 19 receives the magnetic field and then hardens to absorb the vibration energy. At this time, the micro-movement amplitude of the waveguide 12 decreases, and the magnetic field fluctuation converted from the vibration energy feeds back to the MR elastomer 19. The MR elastomer 19 performs hardening dynamic compensation for impedance drift, thereby improving the stability of the multi-layer memory module precision circuit board during use.

[0068] In this embodiment, the multi-layer memory module precision circuit board improves its vibration attenuation efficiency through the MR elastomer 19, resulting in an increase in the vibration attenuation efficiency. Due to the increase in the vibration attenuation efficiency, the structural wear rate inside the multi-layer memory module precision circuit board is reduced. At the same time, the earthquake-resistant hardening of the MR elastomer 19 can significantly improve the impedance drift suppression rate, enhancing the use stability of the multi-layer memory module precision circuit board.

[0069] Regarding the device in the above embodiment, the specific manners in which each module performs operations have been described in detail in the embodiment related to the method, and will not be elaborated here.

[0070] The solution of the present application has been described in detail above with reference to the accompanying drawings. In the above embodiments, the descriptions of the respective embodiments have their own emphases. For the parts not described in detail in a certain embodiment, reference can be made to the relevant descriptions of other embodiments. Those skilled in the art should also be aware that the actions and modules involved in the specification are not necessarily essential to the present application. In addition, it can be understood that the steps in the method embodiments of the present application can be adjusted, combined, and deleted according to actual needs, and the modules in the device embodiments of the present application can be combined, divided, and deleted according to actual needs.

[0071] The various embodiments of the present application have been described above. The above description is exemplary and not exhaustive, and is not limited to the disclosed embodiments. Many modifications and variations are obvious to those of ordinary skill in the art in the technical field without departing from the scope and spirit of the described embodiments. The selection of the terms used herein is intended to best explain the principles of the embodiments, practical applications, or improvements to the technologies in the market, or to enable other ordinary skilled persons in the technical field to understand the embodiments disclosed herein.

Claims

1. A precision circuit board for a multi-layer memory module with ultra-high frequency, characterized in that, Comprising: The surface layer of the functional circuit (1), the high-speed signal layer (2), the upper grounding layer (3), the upper waveguide insulating layer (4), the power supply layer (5), the lower waveguide insulating layer (6), the lower grounding layer (7) and the bottom layer of the functional circuit (8); The surface layer of the functional circuit (1), the high-speed signal layer (2), the upper grounding layer (3), the upper waveguide insulating layer (4), the power supply layer (5), the lower waveguide insulating layer (6), the lower grounding layer (7) and the bottom layer of the functional circuit (8) are stacked in sequence from top to bottom; The high-speed signal layer (2) is provided with a conductive groove (9) running through it, and a conductive column (10) is adaptively arranged in the conductive groove (9); Waveguide grooves (11) are provided at the tops of the upper waveguide insulating layer (4) and the lower waveguide insulating layer (6), and waveguides (12) are arranged inside the waveguide grooves (11); The power supply layer (5) is provided with a heat conducting column (13) running through and fixedly connected, the heat conducting column (13) is fixedly connected through the high-speed signal layer (2), the upper grounding layer (3) and the upper waveguide insulating layer (4), and a metal shutter (14) is provided at the top of the surface layer of the functional circuit (1).

2. The precision circuit board for a super high frequency multi-layer memory module according to claim 1, characterized in that, Louver through grooves (15) are provided at positions near the edges on both sides parallel to the top of the surface layer of the functional circuit (1), and the metal shutter (14) is fixedly connected to the inside of the louver through grooves (15).

3. The precision circuit board for a super high-frequency multi-layer memory module according to claim 1, wherein, The metal shutter (14) is made of a shape memory metal material, the rotation angle of the metal shutter (14) is 0° - 45°, the width of the metal shutter (14) is 0.1 mm, and the spacing is 0.05 mm.

4. The precision circuit board for a super high-frequency multi-layer memory module according to claim 1, characterized in that, The bottom of the conductive column (10) is fixedly connected with a conductive plug (16), a conductive socket (17) is provided at the top of the upper grounding layer (3), and the conductive plug (16) is adaptively inserted into the conductive socket (17).

5. The precision circuit board for a super-high-frequency multi-layer memory module according to claim 1, wherein A shock absorption groove (18) is provided at the top of the bottom layer of the functional circuit (8), and an MR elastomer (19) is filled inside the shock absorption groove (18).

6. The precision circuit board for a super high-frequency multi-layer memory module according to claim 1, wherein, The cross-section of the conductive column (10) is trapezoidal, the conductive column (10) is formed by a laser-induced chemical deposition process, the material of the conductive column (10) is made of metallic copper, the diameter of the top end of the conductive column (10) is 70% of the diameter of the bottom end, and the tolerance is ±3 μm.

7. The precision circuit board for a super high frequency multi-layer memory module according to claim 1, characterized in that, The conductive grooves (9) are distributed in a honeycomb shape on the high-speed signal layer (2), and the displacement between every two conductive grooves (9) in the X / Y direction is 50 μm.

8. The precision circuit board for a super high-frequency multi-layer memory module according to claim 1, characterized in that, The depth of the waveguide groove (11) is 0.2 mm and the width is 0.8 mm. The waveguide groove (11) is formed by reactive ion etching. The waveguide (12) is a copper-aluminum oxide ceramic composite tube, and the waveguide groove (11) is inclined at an axis of 15° with respect to the conductive groove (9).

9. The precision circuit board for a super high-frequency multi-layer memory module according to claim 1, wherein, The heat conducting column (13) is made of a Ni-Ti alloy core, and a copper plating layer is provided on the outer layer of the Ni-Ti alloy core.

10. The precision circuit board for a super-high frequency multi-layer memory module according to claim 1, wherein The upper grounding layer (3) is a copper-aluminum composite substrate, the lower grounding layer (7) is a copper-graphene reinforced substrate, and the upper waveguide insulating layer (4) and the lower waveguide insulating layer (6) are of a ceramic composite material.

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