High-breakdown-field hafnium-based ferroelectric capacitor device and manufacturing method thereof
By introducing vanadium dioxide interpolation into hafnium oxide-based ferroelectric capacitor devices, the problem of easy breakdown under high electric fields is solved, and the breakdown field strength is significantly improved and reliability is enhanced. It is suitable for high-density storage and low-power electronic devices.
Patent Information
- Application Number
- CN202510455843.9
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-04-11
- Publication Date
- 2025-07-11
AI Technical Summary
Existing hafnium oxide-based ferroelectric capacitor devices are prone to breakdown under high electric fields, resulting in limited reliability and life. The traditional improvement methods are limited in effect and are difficult to compatible with CMOS processes.
A vanadium dioxide interlayer is introduced into a hafnium oxide-based ferroelectric capacitor device, and a vanadium dioxide interlayer between the electrode and the hafnium oxide ferroelectric layer is formed by physical vapor deposition, magnetron sputtering, etc., and a rapid thermal annealing treatment is performed.
It significantly improves the breakdown field strength of hafnium oxide-based ferroelectric capacitor devices, weakens fatigue and aging, reduces leakage current, enhances reliability, and is compatible with existing processes, broadens the application range.
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Figure CN120302647A_ABST
Abstract
Description
Technical Field
[0001] The present invention belongs to the technical field of semiconductor devices, and particularly relates to a hafnium-based ferroelectric capacitor device with a high breakdown field and a manufacturing method thereof. Background Art
[0002] With the development of information technology, people's demand for data processing and storage has increased exponentially, which has prompted researchers to continuously miniaturize the size of semiconductor devices and improve performance requirements. Among them, ferroelectric hafnium-based capacitor devices have non-volatility, low power consumption, high speed, radiation resistance, and excellent fatigue characteristics. At the same time, they are highly compatible with existing CMOS processes and have important application significance in fields such as automotive electronics, smart grids, medical devices, aerospace, etc., and are expected to become the next-generation memory.
[0003] However, in practical applications, the dielectric breakdown problem of hafnium-based ferroelectric capacitors under high electric fields has become increasingly prominent, seriously restricting the reliability and service life of the devices. Under high electric field working conditions, the electric field stress has an obvious impact on the reliability of the ferroelectric layer, and the device is prone to breakdown or performance degradation, resulting in limited stability and life in practical applications. The interface defects and uneven distribution of oxygen vacancies between the hafnium oxide ferroelectric layer and the electrode in traditional ferroelectric capacitors are likely to cause local electric field concentration, thereby reducing the breakdown field strength and reliability of the device.
[0004] The breakdown field strength, as a key indicator for measuring the breakdown reliability of ferroelectric capacitors, directly determines the maximum operating voltage, electric stress resistance, and long-term stability of the device, and limits the working window and application range of ferroelectric capacitor devices. The breakdown behavior of hafnium-based ferroelectric capacitors is not only limited by the characteristics of the material itself, but also closely related to its polycrystalline structure, interface quality, and dynamic evolution under external fields. For example, high leakage current paths are easily formed in the grain boundary regions of polycrystalline hafnium-based ferroelectric materials, becoming the preferred sites for breakdown; the energy band mismatch and defect state density difference at the interface between the electrode and the ferroelectric layer will cause local electric field concentration and accelerate dielectric failure. These problems are particularly important in high-end application scenarios such as artificial intelligence chips, 5G communications, vehicle-mounted electronics, and high-density memories, directly affecting the yield and reliability of the devices.
[0005] Existing solutions generally adopt means such as changing doping elements, superlattice stacking, and electrode material optimization to improve the breakdown field strength of hafnium-based ferroelectric capacitors. Although such methods can improve the breakdown electric field strength of ferroelectric capacitors to a certain extent, the improvement amplitude of the breakdown electric field strength is relatively low, and a series of disadvantages will also occur. For example, superlattice stacking will reduce the polarization intensity of ferroelectric capacitors to a certain extent and reduce ferroelectric properties; doping with yttrium elements will increase the annealing temperature and increase the process thermal budget; complex doping elements are difficult to be compatible with the mainstream CMOS process, hindering large-scale applications, etc.
[0006] Therefore, how to more effectively improve the breakdown field strength of hafnium oxide-based ferroelectric capacitors has become a technical problem that needs to be solved urgently. Summary of the invention
[0007] The object of the present invention is to provide a high breakdown field hafnium-based ferroelectric capacitor device and a manufacturing method thereof, so as to solve the above problems existing in the prior art.
[0008] In order to achieve the above object, the present invention adopts the following technical solutions:
[0009] In a first aspect, the present invention provides a first high breakdown field hafnium-based ferroelectric capacitor device, comprising a bottom electrode layer, a hafnium oxide ferroelectric layer, a top electrode layer and a vanadium dioxide intercalation layer, wherein the bottom electrode layer is arranged at the bottom of the hafnium oxide ferroelectric layer, the top electrode layer is arranged at the top of the hafnium oxide ferroelectric layer, and a vanadium dioxide intercalation layer is arranged between the bottom electrode layer and the hafnium oxide ferroelectric layer and between the top electrode layer and the hafnium oxide ferroelectric layer.
[0010] A second high breakdown field hafnium-based ferroelectric capacitor device comprises a bottom electrode layer, a hafnium oxide ferroelectric layer, a top electrode layer and a vanadium dioxide intercalation layer, wherein the bottom electrode layer is arranged at the bottom of the hafnium oxide ferroelectric layer, the top electrode layer is arranged at the top of the hafnium oxide ferroelectric layer, and a vanadium dioxide intercalation layer is arranged between the bottom electrode layer and the hafnium oxide ferroelectric layer.
[0011] A third high breakdown field hafnium-based ferroelectric capacitor device comprises a bottom electrode layer, a hafnium oxide ferroelectric layer, a top electrode layer and a vanadium dioxide intercalation layer, wherein the bottom electrode layer is arranged at the bottom of the hafnium oxide ferroelectric layer, the top electrode layer is arranged at the top of the hafnium oxide ferroelectric layer, and a vanadium dioxide intercalation layer is arranged between the top electrode layer and the hafnium oxide ferroelectric layer.
[0012] In a possible design, the bottom electrode layer is disposed on a silicon substrate.
[0013] In a possible design, the bottom electrode layer and the top electrode layer are made of TiN, Pt, W or Mo materials, and have a thickness of 10 nm-100 nm.
[0014] In a possible design, the hafnium oxide ferroelectric layer uses a doped hafnium oxide-based material with a thickness of 5 nm-30 nm.
[0015] In a possible design, the thickness of the vanadium dioxide intercalation layer is 1 nm-5 nm.
[0016] In a second aspect, the present invention provides a method for manufacturing a first high breakdown field hafnium-based ferroelectric capacitor device, which is used to manufacture the first high breakdown field hafnium-based ferroelectric capacitor device in the first aspect, and the method comprises:
[0017] Growing a bottom electrode layer on a silicon substrate by physical vapor deposition;
[0018] On the bottom electrode layer, a bottom vanadium dioxide interlayer is grown by magnetron sputtering, atomic layer deposition or pulsed laser deposition;
[0019] On the bottom vanadium dioxide interlayer, a hafnium oxide ferroelectric layer is grown by atomic layer deposition;
[0020] On the hafnium oxide ferroelectric layer, a top vanadium dioxide interlayer is grown by magnetron sputtering, atomic layer deposition or pulsed laser deposition;
[0021] On the top vanadium dioxide interlayer, a patterned top electrode layer is grown by physical vapor deposition to obtain an initial capacitor structure;
[0022] In a nitrogen atmosphere, the initial capacitor structure is subjected to rapid thermal annealing at a set temperature for a set duration to obtain the final hafnium-based ferroelectric capacitor device.
[0023] A second method for manufacturing a hafnium-based ferroelectric capacitor device with a high breakdown field, which is used to manufacture the second hafnium-based ferroelectric capacitor device with a high breakdown field in the first aspect, the method includes:
[0024] On a silicon substrate, a bottom electrode layer is grown by physical vapor deposition;
[0025] On the bottom electrode layer, a vanadium dioxide interlayer is grown by magnetron sputtering, atomic layer deposition or pulsed laser deposition;
[0026] On the vanadium dioxide interlayer, a hafnium oxide ferroelectric layer is grown by atomic layer deposition;
[0027] On the hafnium oxide ferroelectric layer, a patterned top electrode layer is grown by physical vapor deposition to obtain an initial capacitor structure;
[0028] In a nitrogen atmosphere, the initial capacitor structure is subjected to rapid thermal annealing at a set temperature for a set duration to obtain the final hafnium-based ferroelectric capacitor device.
[0029] A third method for manufacturing a hafnium-based ferroelectric capacitor device with a high breakdown field, which is used to manufacture the third hafnium-based ferroelectric capacitor device with a high breakdown field in the first aspect, the method includes:
[0030] On a silicon substrate, a bottom electrode layer is grown by physical vapor deposition;
[0031] On the bottom electrode layer, a hafnium oxide ferroelectric layer is grown by atomic layer deposition;
[0032] On the hafnium oxide ferroelectric layer, a vanadium dioxide interlayer is grown by magnetron sputtering, atomic layer deposition or pulsed laser deposition;
[0033] On the vanadium dioxide interlayer, a patterned top electrode layer is grown by physical vapor deposition to obtain an initial capacitor structure;
[0034] Under a nitrogen atmosphere, a rapid thermal annealing treatment is carried out on the initial capacitor structure at a set temperature for a set duration to obtain the final hafnium-based ferroelectric capacitor device.
[0035] Beneficial effects: By adding a vanadium dioxide interlayer to the hafnium oxide-based ferroelectric capacitor, the present invention can significantly increase the breakdown field strength of the hafnium oxide-based ferroelectric capacitor device without reducing the polarization intensity of the hafnium oxide-based ferroelectric capacitor, weaken the fatigue and aging phenomena, reduce the leakage current, improve the long-term reliability of the hafnium oxide-based ferroelectric capacitor, and broaden the voltage operating window of the hafnium oxide-based ferroelectric capacitor device, which can be compatible with its existing process, meet the requirements of high-density storage and low-power electronic devices, and broaden its application range. BRIEF DESCRIPTION OF THE DRAWINGS
[0036] In order to more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the following will briefly introduce the drawings required for the description of the embodiments or the prior art. Obviously, the drawings in the following description are only some embodiments of the present invention. For those of ordinary skill in the art, without creative efforts, other drawings can be obtained based on these drawings.
[0037] Figure 1 It is a schematic structural diagram of the first hafnium-based ferroelectric capacitor device in Embodiment 1 of the present invention;
[0038] Figure 2 It is a schematic structural diagram of the second hafnium-based ferroelectric capacitor device in Embodiment 1 of the present invention;
[0039] Figure 3 It is a schematic structural diagram of the third hafnium-based ferroelectric capacitor device in Embodiment 1 of the present invention;
[0040] Figure 4 It is a schematic diagram of the steps of the manufacturing method of the first hafnium-based ferroelectric capacitor device in Embodiment 2 of the present invention;
[0041] Figure 5 It is a schematic diagram of the steps of the manufacturing method of the second hafnium-based ferroelectric capacitor device in Embodiment 2 of the present invention;
[0042] Figure 6 It is a schematic diagram of the steps of the manufacturing method of the third hafnium-based ferroelectric capacitor device in Embodiment 2 of the present invention. DETAILED DESCRIPTION OF THE INVENTION
[0043] It should be noted here that the description of these embodiments is used to help understand the present invention, but does not constitute a limitation on the present invention. The specific structural and functional details disclosed herein are only used to describe the exemplary embodiments of the present invention. However, the present invention can be embodied in many alternative forms and should not be construed as limited to the embodiments set forth herein.
[0044] It should be understood that, unless otherwise clearly specified and defined, the corresponding terms should be understood in a broad sense. For example, "connection" can be a fixed connection, a detachable connection, or an integral connection; it can be an electrical connection, a direct connection, or an indirect connection through an intermediate medium, and can be the communication inside two elements. For those of ordinary skill in the art, the specific meanings of the above terms in the embodiments can be understood according to specific circumstances.
[0045] Specific details are provided in the following description to facilitate a complete understanding of the exemplary embodiments. However, those of ordinary skill in the art should understand that the exemplary embodiments can be implemented without these specific details. For example, the system can be shown in a block diagram to avoid obscuring the examples with unnecessary details. In other embodiments, well-known processes, structures, and technologies can be shown without unnecessary details to avoid obscuring the embodiments.
[0046] Embodiment 1:
[0047] This embodiment provides a first high breakdown field hafnium-based ferroelectric capacitor device, as Figure 1 shown, including a bottom electrode layer (TiN), a hafnium oxide ferroelectric layer (Hf 0.5 Zr 0.5 O2), a top electrode layer (TiN), and a vanadium dioxide interlayer (VO2). The bottom electrode layer is disposed at the bottom of the hafnium oxide ferroelectric layer, the top electrode layer is disposed at the top of the hafnium oxide ferroelectric layer, and a vanadium dioxide interlayer is provided between the bottom electrode layer and the hafnium oxide ferroelectric layer and between the top electrode layer and the hafnium oxide ferroelectric layer.
[0048] This embodiment provides a second high breakdown field hafnium-based ferroelectric capacitor device, as Figure 2 shown, including a bottom electrode layer (TiN), a hafnium oxide ferroelectric layer (Hf 0.5 Zr 0.5 O2), a top electrode layer (TiN), and a vanadium dioxide interlayer (VO2). The bottom electrode layer is disposed at the bottom of the hafnium oxide ferroelectric layer, the top electrode layer is disposed at the top of the hafnium oxide ferroelectric layer, and a vanadium dioxide interlayer is provided between the bottom electrode layer and the hafnium oxide ferroelectric layer.
[0049] This embodiment provides a third high breakdown field hafnium-based ferroelectric capacitor device, as Figure 3 shown, including a bottom electrode layer (TiN), a hafnium oxide ferroelectric layer (Hf0.5 Zr 0.5 O2), a top electrode layer (TiN), and a vanadium dioxide interlayer (VO2). The bottom electrode layer is disposed at the bottom of the hafnium oxide ferroelectric layer, the top electrode layer is disposed at the top of the hafnium oxide ferroelectric layer, and a vanadium dioxide interlayer is provided between the top electrode layer and the hafnium oxide ferroelectric layer.
[0050] The difference between the three hafnium-based ferroelectric capacitor devices lies in the position of the vanadium dioxide interlayer. The vanadium dioxide interlayer can be disposed only between a single electrode and the ferroelectric layer, or can be disposed between both electrodes and the ferroelectric layer at the same time. The hafnium-based ferroelectric capacitor device uses silicon (Si) as a substrate, that is, the bottom electrode layer is formed on the silicon (Si) substrate. The bottom electrode layer and the top electrode layer can use TiN (titanium nitride) material, or can use materials such as Pt (platinum), W (tungsten), or Mo (molybdenum) according to actual needs. The thickness of the bottom electrode layer and the top electrode layer is preferably 10 nm - 100 nm. The hafnium oxide ferroelectric layer uses a doped hafnium oxide-based material, such as forming Hf 0.5 Zr 0.5 O2 ferroelectric layer, and the thickness is preferably 5 nm - 30 nm. The vanadium dioxide (VO2) interlayer can be formed by magnetron sputtering, atomic layer deposition, or pulsed laser deposition, and the thickness is preferably 1 nm - 5 nm.
[0051] By adding a vanadium dioxide interlayer to the hafnium oxide-based ferroelectric capacitor, due to the multivalent state of vanadium element, the change of element valence state will occur under a higher voltage, generating additional oxygen vacancy migration, and the reversible migration of charges in the ferroelectric layer appears under the action of a high electric field, thereby improving the breakdown field of the ferroelectric capacitor device. At the same time, the electrical stress of the ferroelectric layer under a high voltage can be reduced, the fatigue and aging phenomena can be weakened, the leakage current can be reduced, and the reliability can be improved.
[0052] Example 2:
[0053] This example provides a manufacturing method of a hafnium-based ferroelectric capacitor device with a high breakdown field, which is used to manufacture the first hafnium-based ferroelectric capacitor device with a high breakdown field in Example 1, as Figure 4 shown. This method includes the following steps:
[0054] S11. Grow a bottom electrode layer (TiN) on a silicon (Si) substrate by physical vapor deposition (PVD), and the bottom electrode thickness can be set to 20 nm;
[0055] S12. Grow a bottom vanadium dioxide (VO2) interlayer on the bottom electrode layer by magnetron sputtering, atomic layer deposition, or pulsed laser deposition, and the interlayer thickness can be set to 1.5 nm;
[0056] S13. Grow a hafnium oxide ferroelectric layer (Hf 0.5 Zr 0.5O2), the thickness of the ferroelectric layer can be set to 15 nm;
[0057] S14. On the hafnium oxide ferroelectric layer (Hf 0.5 Zr 0.5 O2), a top vanadium dioxide (VO2) interlayer is grown by magnetron sputtering, atomic layer deposition or pulsed laser deposition, and the interlayer thickness can be set to 1.5 nm;
[0058] S15. A patterned top electrode layer (TiN) is grown on the top vanadium dioxide (VO2) interlayer by physical vapor deposition, and the top electrode thickness can be set to 20 nm to obtain an initial capacitor structure;
[0059] S16. In a nitrogen atmosphere, the initial capacitor structure is subjected to rapid thermal annealing at a set temperature (such as 500 °C) and a set duration (such as 30 s) to obtain the final hafnium-based ferroelectric capacitor device.
[0060] This embodiment provides a manufacturing method for a hafnium-based ferroelectric capacitor device with a high breakdown field, which is used to manufacture the second hafnium-based ferroelectric capacitor device with a high breakdown field in Embodiment 1. As Figure 5 shown, the method includes the following steps:
[0061] S21. A bottom electrode layer is grown on the silicon substrate by physical vapor deposition, and the bottom electrode thickness can be set to 20 nm;
[0062] S22. A vanadium dioxide interlayer is grown on the bottom electrode layer by magnetron sputtering, atomic layer deposition or pulsed laser deposition, and the interlayer thickness can be set to 1.5 nm;
[0063] S23. A hafnium oxide ferroelectric layer is grown on the vanadium dioxide interlayer by atomic layer deposition, and the ferroelectric layer thickness can be set to 15 nm;
[0064] S24. A patterned top electrode layer is grown on the hafnium oxide ferroelectric layer by physical vapor deposition, and the top electrode thickness can be set to 20 nm to obtain an initial capacitor structure;
[0065] S25. In a nitrogen atmosphere, the initial capacitor structure is subjected to rapid thermal annealing at a set temperature (such as 500 °C) and a set duration (such as 30 s) to obtain the final hafnium-based ferroelectric capacitor device.
[0066] This embodiment provides a manufacturing method for a hafnium-based ferroelectric capacitor device with a high breakdown field, which is used to manufacture the third hafnium-based ferroelectric capacitor device with a high breakdown field in Embodiment 1. As Figure 6 shown, the method includes the following steps:
[0067] S31. A bottom electrode layer is grown on the silicon substrate by physical vapor deposition, and the bottom electrode thickness can be set to 20 nm;
[0068] S32. The hafnium oxide ferroelectric layer is grown on the bottom electrode layer by atomic layer deposition, and the thickness of the ferroelectric layer can be set to 15 nm;
[0069] S33. The vanadium dioxide interlayer is grown on the hafnium oxide ferroelectric layer by magnetron sputtering, atomic layer deposition or pulsed laser deposition, and the thickness of the interlayer can be set to 1.5 nm;
[0070] S34. The patterned top electrode layer is grown on the vanadium dioxide interlayer by physical vapor deposition, and the thickness of the top electrode can be set to 20 nm to obtain the initial capacitor structure;
[0071] S35. Under a nitrogen atmosphere, the initial capacitor structure is subjected to rapid thermal annealing at a set temperature (such as 500 °C) and a set duration (such as 30 s) to obtain the final hafnium-based ferroelectric capacitor device.
[0072] Finally, it should be noted that the above are only the preferred embodiments of the present invention and are not intended to limit the protection scope of the present invention. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principle of the present invention shall be included within the protection scope of the present invention.
Claims
1. A hafnium-based ferroelectric capacitor device with a high breakdown field, characterized in that, It includes a bottom electrode layer, a hafnium oxide ferroelectric layer, a top electrode layer and a vanadium dioxide interlayer. The bottom electrode layer is disposed at the bottom of the hafnium oxide ferroelectric layer, the top electrode layer is disposed at the top of the hafnium oxide ferroelectric layer, and vanadium dioxide interlayers are provided both between the bottom electrode layer and the hafnium oxide ferroelectric layer and between the top electrode layer and the hafnium oxide ferroelectric layer.
2. A hafnium-based ferroelectric capacitor device with a high breakdown field, characterized in that, It includes a bottom electrode layer, a hafnium oxide ferroelectric layer, a top electrode layer and a vanadium dioxide interlayer. The bottom electrode layer is disposed at the bottom of the hafnium oxide ferroelectric layer, the top electrode layer is disposed at the top of the hafnium oxide ferroelectric layer, and a vanadium dioxide interlayer is provided between the bottom electrode layer and the hafnium oxide ferroelectric layer.
3. A hafnium-based ferroelectric capacitor device with a high breakdown field, characterized in that, It includes a bottom electrode layer, a hafnium oxide ferroelectric layer, a top electrode layer and a vanadium dioxide interlayer. The bottom electrode layer is disposed at the bottom of the hafnium oxide ferroelectric layer, the top electrode layer is disposed at the top of the hafnium oxide ferroelectric layer, and a vanadium dioxide interlayer is provided between the top electrode layer and the hafnium oxide ferroelectric layer.
4. The high breakdown field hafnium-based ferroelectric capacitor device according to any one of claims 1-3, characterized in that The bottom electrode layer is disposed on the silicon substrate.
5. The high breakdown field hafnium-based ferroelectric capacitor device according to any one of claims 1-3, characterized in that, The bottom electrode layer and the top electrode layer are made of TiN, Pt, W or Mo materials with a thickness of 10 nm - 100 nm.
6. The high breakdown field hafnium-based ferroelectric capacitor device according to any one of claims 1-3, characterized in that The hafnium oxide ferroelectric layer is made of a doped hafnium oxide-based material with a thickness of 5 nm - 30 nm.
7. The high breakdown field hafnium-based ferroelectric capacitor device according to any one of claims 1-3, characterized in that, The thickness of the vanadium dioxide interlayer is 1 nm - 5 nm.
8. A manufacturing method of a hafnium-based ferroelectric capacitor device with a high breakdown field, which is used to manufacture the hafnium-based ferroelectric capacitor device described in claim 1, characterized in that, It includes: Growing the bottom electrode layer on the silicon substrate by physical vapor deposition; Growing the bottom vanadium dioxide interlayer on the bottom electrode layer by magnetron sputtering, atomic layer deposition or pulsed laser deposition; Growing the hafnium oxide ferroelectric layer on the bottom vanadium dioxide interlayer by atomic layer deposition; Growing the top vanadium dioxide interlayer on the hafnium oxide ferroelectric layer by magnetron sputtering, atomic layer deposition or pulsed laser deposition; Growing the patterned top electrode layer on the top vanadium dioxide interlayer by physical vapor deposition to obtain an initial capacitor structure; Performing rapid thermal annealing treatment on the initial capacitor structure at a set temperature for a set duration in a nitrogen atmosphere to obtain the final hafnium-based ferroelectric capacitor device.
9. A manufacturing method of a hafnium-based ferroelectric capacitor device with a high breakdown field, which is used to manufacture the hafnium-based ferroelectric capacitor device described in claim 2, characterized in that, It includes: Growing the bottom electrode layer on the silicon substrate by physical vapor deposition; Growing the vanadium dioxide interlayer on the bottom electrode layer by magnetron sputtering, atomic layer deposition or pulsed laser deposition; Growing the hafnium oxide ferroelectric layer on the vanadium dioxide interlayer by atomic layer deposition; Growing the patterned top electrode layer on the hafnium oxide ferroelectric layer by physical vapor deposition to obtain an initial capacitor structure; Performing rapid thermal annealing treatment on the initial capacitor structure at a set temperature for a set duration in a nitrogen atmosphere to obtain the final hafnium-based ferroelectric capacitor device.
10. A manufacturing method of a hafnium-based ferroelectric capacitor device with a high breakdown field, for manufacturing the hafnium-based ferroelectric capacitor device according to claim 3, characterized in that, It includes: Growing the bottom electrode layer on the silicon substrate by physical vapor deposition; Growing the hafnium oxide ferroelectric layer on the bottom electrode layer by atomic layer deposition; Growing the vanadium dioxide interlayer on the hafnium oxide ferroelectric layer by magnetron sputtering, atomic layer deposition or pulsed laser deposition; Growing the patterned top electrode layer on the vanadium dioxide interlayer by physical vapor deposition to obtain an initial capacitor structure; Performing rapid thermal annealing treatment on the initial capacitor structure at a set temperature for a set duration in a nitrogen atmosphere to obtain the final hafnium-based ferroelectric capacitor device.