Power device degradation on-line test system and method

Abstract

The invention relates to a power device degradation online test system and method, and relates to the technical field of test. The power device degradation on-line test system comprises a high-power microwave irradiation device, a switch state loading device and a semiconductor parameter analyzer. The high-power microwave irradiation device is used for providing high-power microwave irradiation stress for the power device; the switch state loading device is used for controlling the power device to work in a target switch state; the target switching state comprises a soft switching state or a hard switching state; and the semiconductor parameter analyzer is used for acquiring the initial electrical parameters of the power device, acquiring the test electrical parameters of the power device applied with the high-power microwave irradiation stress in the target switching state, and determining the degradation online test result of the power device according to the initial electrical parameters and the test electrical parameters. According to the invention, the electrical parameter degradation characteristics of the power device under the application of high-power microwave irradiation stress in soft and hard switching states can be monitored on line.

Description

Technical Field

[0001] The present application relates to the technical field of testing, and particularly to an online testing system and method for power device degradation. Background Art

[0002] With the rapid development of unmanned aerial vehicle (UAV) technology, it has been widely used not only in civilian fields such as disaster rescue, power line inspection, mapping, and agricultural plant protection, but also plays an increasingly significant role in military fields.

[0003] Generally, high power microwave (HPM) can interfere with or damage the electronic system of a UAV through high power electromagnetic pulses, inducing high voltage and large current in the electronic system of the UAV, resulting in the degradation or even failure of power devices inside the electronic system of the UAV, causing signal distortion, equipment failure, or functional chaos of the UAV. Therefore, how to accurately test and evaluate the degradation characteristics of power devices under the action of high power microwave irradiation is an urgent problem to be solved. Summary of the Invention

[0004] Based on this, it is necessary to provide an online testing system and method for power device degradation, which realizes the testing and evaluation of the electrical parameter degradation characteristics of power devices under high power microwave irradiation stress in soft-switching state and hard-switching state respectively.

[0005] An embodiment of the present application provides an online testing system for power device degradation, including: a high power microwave irradiation device, a switching state loading device, and a semiconductor parameter analyzer; the power device is arranged inside the high power microwave irradiation device and is respectively connected to the switching state loading device and the semiconductor parameter analyzer; wherein,

[0006] The high power microwave irradiation device is used to provide high power microwave irradiation stress to the power device;

[0007] The switching state loading device is used to control the power device to operate in a target switching state; the target switching state includes a soft-switching state or a hard-switching state;

[0008] The semiconductor parameter analyzer is used to obtain the initial electrical parameters of the power device, obtain the test electrical parameters of the power device under the high power microwave irradiation stress in the target switching state, and determine the online testing result of the power device degradation according to the initial electrical parameters and the test electrical parameters.

[0009] In one embodiment, the high power microwave irradiation device includes:

[0010] A resonant cavity, and the power device is arranged inside the resonant cavity;

[0011] A high-power microwave radiation source for providing high-power microwave signals;

[0012] An excitation probe is disposed in the resonant cavity and connected to the high-power microwave radiation source for generating the high-power microwave irradiation stress in the resonant cavity according to the high-power microwave signal.

[0013] In one embodiment, the high-power microwave radiation source includes a microwave signal source, a power amplifier, a circulator, and a directional coupler; wherein,

[0014] The microwave signal source is used to provide microwave signals;

[0015] The power amplifier is connected to the microwave signal source, and the power amplifier is used to perform power amplification processing on the microwave signal and output a high-power microwave signal;

[0016] The circulator is respectively connected to the power amplifier and the directional coupler, and the circulator is used to transmit the high-power microwave signal from the power amplifier to the directional coupler;

[0017] The directional coupler is connected to the excitation probe, and the directional coupler is used to transmit the high-power microwave signal from the circulator to the excitation probe.

[0018] In one embodiment, the system further includes a power meter; the directional coupler includes a first directional coupler and a second directional coupler; wherein,

[0019] The input end of the first directional coupler is connected to the circulator, the direct output end of the first directional coupler is connected to the input end of the second directional coupler, and the coupled output end of the first directional coupler is connected to the first end of the power meter;

[0020] The DC output end of the second directional coupler is connected to the excitation probe, and the coupled output end of the second directional coupler is connected to the second end of the power meter;

[0021] The power meter is used to detect the first power coupled and output by the first directional coupler and the second power coupled and output by the second directional coupler.

[0022] In one embodiment, the system further includes a device fixture, and the device fixture includes:

[0023] A fixture body for carrying the power device, and one side of the fixture body close to the power device is disposed in the high-power microwave irradiation device;

[0024] A signal terminal, located on a side of the fixture body away from the power device and disposed outside the high-power microwave irradiation device, is used to be connected to the power device, the switch state loading device, and the semiconductor parameter analyzer respectively.

[0025] In one embodiment, the switch state loading device includes:

[0026] A gate drive circuit, connected to the gate of the power device, is used to provide a gate drive signal;

[0027] A power circuit, connected to a first pole and a second pole of the power device respectively, is used to control the power device to operate in the target switch state when the power device is driven by the gate drive signal;

[0028] A control circuit, connected to the gate drive circuit and the power circuit respectively, is used to control the working states of the gate drive circuit and the power circuit respectively, so that the power device operates in the target switch state.

[0029] In one embodiment, the power circuit includes a gating module, a first charge and discharge module, a second charge and discharge module, and a DC power supply; wherein, a first end of the gating module is connected to the second pole of the power device, a second end of the gating module is respectively connected to a first end of the first charge and discharge module and a first end of the DC power supply, a second end of the gating module is respectively connected to a second end of the first charge and discharge module and a first end of the second charge and discharge module, and a control end of the gating module is connected to the control circuit; a second end of the second charge and discharge module is respectively connected to the second pole of the power device and a second end of the DC power supply; wherein,

[0030] When the gating module conducts the first end of the first charge and discharge module and the DC power supply to the second pole of the power device respectively, the power device operates in the hard switch state;

[0031] When the gating module conducts the second end of the first charge and discharge module and the first end of the second charge and discharge module to the second pole of the power device respectively, the power device operates in the soft switch state.

[0032] In one embodiment, both the first charge and discharge module and the second charge and discharge module include a capacitor and a resistor connected in parallel.

[0033] An embodiment of the present application provides a method for online testing of power device degradation, and the method includes:

[0034] Obtain the initial electrical parameters of the power device;

[0035] Apply high-power microwave irradiation stress to the power device and control the power device to operate in a target switching state; the target switching state includes a soft switching state or a hard switching state;

[0036] Obtain the test electrical parameters of the power device when the high-power microwave irradiation stress is applied in the target switching state;

[0037] Determine the online test result of the degradation of the power device according to the initial electrical parameters and the test electrical parameters.

[0038] In one embodiment, the applying high-power microwave irradiation stress to the power device and controlling the power device to operate in a target switching state includes:

[0039] Obtain the test condition parameters of the power device; the test condition parameters include high-power microwave irradiation condition parameters and target switching state parameters; the high-power microwave irradiation condition parameters include irradiation power and irradiation time;

[0040] Apply high-power microwave irradiation stress to the power device according to the irradiation power and control the power device to operate in the target switching state according to the target switching state parameters;

[0041] After the high-power microwave irradiation stress is applied to the power device for the irradiation time when the power device operates in the target switching state, stop applying the high-power microwave irradiation stress and control the power device to stop operating.

[0042] The above-mentioned online test system and method for the degradation of power devices include a high-power microwave irradiation device, a switching state loading device, and a semiconductor parameter analyzer. Among them, the power device is arranged in the high-power microwave irradiation device and is respectively connected to the switching state loading device and the semiconductor parameter analyzer; the high-power microwave irradiation device provides high-power microwave irradiation stress to the power device, and the switching state loading device controls the power device to operate in a target switching state, where the target switching state includes a soft switching state or a hard switching state, and the semiconductor parameter analyzer obtains the initial electrical parameters of the power device, obtains the test electrical parameters of the power device when the high-power microwave irradiation stress is applied in the target switching state, and determines the online test result of the degradation of the power device according to the initial electrical parameters and the test electrical parameters. This system realizes the online test of the degradation of power devices after being applied high-power microwave irradiation stress in the soft switching state and the hard switching state respectively, can accurately evaluate the electrical parameter degradation characteristics of power devices, and thus provides strong technical support and data support for the reliability research and protection design of power devices in high-power microwave irradiation environments, with broad application prospects. Description of the Drawings

[0043] To more clearly illustrate the technical solutions in the embodiments of the present application or the prior art, the following will briefly introduce the accompanying drawings required for the description of the embodiments or the prior art. Obviously, the accompanying drawings in the following description are only some embodiments of the present application. For those of ordinary skill in the art, without creative efforts, other accompanying drawings can be obtained based on these drawings.

[0044] Figure 1 Schematic structural diagram of an online power device degradation test system according to an embodiment;

[0045] Figure 2 Schematic structural diagram of an online power device degradation test system according to another embodiment;

[0046] Figure 3 Schematic structural diagram of an online power device degradation test system according to still another embodiment;

[0047] Figure 4 Schematic structural diagram of a device fixture and a power device according to an embodiment;

[0048] Figure 5 Schematic flow diagram of an online power device degradation test method according to an embodiment;

[0049] Figure 6 Schematic flow diagram of an online power device degradation test method according to another embodiment;

[0050] Figure 7 Schematic flow diagram of an online power device degradation test method according to still another embodiment.

[0051] Explanation of reference numerals:

[0052] 10. High-power microwave irradiation device; 11. Resonant cavity; 12. High-power microwave radiation source; 121. Microwave signal source; 122. Power amplifier; 123. Circulator; 124. Directional coupler; 1241. First directional coupler; 1242. Second directional coupler; 13. Excitation probe; 20. Switch state loading device; 21. Gate drive circuit; 22. Power circuit; 221. Strobe module; 222. First charge and discharge module; 223. Second charge and discharge module; 23. Control circuit; 30. Semiconductor parameter analyzer; 40. Power device; 50. Power meter; 60. Device fixture; 61. Fixture body; 611. First fixture body; 612. Second fixture body; 62. Signal terminal. Detailed implementation manners

[0053] To facilitate the understanding of this application, the following will provide a more comprehensive description of this application with reference to the relevant drawings. Embodiments of this application are shown in the drawings. However, this application can be implemented in many different forms and is not limited to the embodiments described herein. On the contrary, these embodiments are provided to make the disclosure of this application more thorough and comprehensive.

[0054] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by those of ordinary skill in the technical field to which this application belongs. The terms used in the description of this application herein are for the purpose of describing specific embodiments only and are not intended to limit this application.

[0055] It can be understood that the terms "first", "second", etc. used in this application may be used herein to describe various elements, but these elements are not limited by these terms. These terms are only used to distinguish a first element from another element. For example, without departing from the scope of this application, a first resistor may be referred to as a second resistor, and similarly, a second resistor may be referred to as a first resistor. Both the first resistor and the second resistor are resistors, but they are not the same resistor.

[0056] It can be understood that for "connection" in the following embodiments, if there is an electrical signal or data transfer between the connected circuits, modules, units, etc., it should be understood as "electrical connection", "communication connection", etc.

[0057] It can be understood that "at least one" means one or more, and "a plurality" means two or more. "At least part of an element" means part or all of the element.

[0058] As used herein, the singular forms "a", "an" and "the" may also include the plural forms unless the context clearly dictates otherwise. It should also be understood that the terms "comprise / include" or "have" etc. specify the presence of the stated features, wholes, steps, operations, components, parts or combinations thereof, but do not preclude the presence or addition of one or more other features, wholes, steps, operations, components, parts or combinations thereof. At the same time, the term "and / or" used in this specification includes any and all combinations of the related listed items.

[0059] As described in the background art, power devices in UAVs, such as power devices in the power supply module and electric drive module of UAVs, are vulnerable to HPM. The power devices in UAVs mainly operate in the switching mode or switching state. The switching state of a power device refers to the operating state in which the power device switches between the on state and the off state. According to the characteristics of voltage and current changes during the switching process, these states can be divided into soft-switching states and hard-switching states. Among them, when the power device operates in the hard-switching state, its advantages are high reliability and low cost, but the disadvantages are large switching losses and easy generation of electromagnetic interference. When the power device operates in the soft-switching state, it can reduce switching losses and reduce the generation of electromagnetic interference, but it will also increase costs and reduce system reliability.

[0060] Based on the above, the embodiments of the present application provide a power device degradation online testing system and method, which can accurately evaluate the degradation degree of power devices when they are exposed to high-power microwave irradiation in the hard-switching state and soft-switching state respectively. That is, by simulating the power device operating in the soft-switching state and hard-switching state respectively, the parameter degradation characteristics of the power device under different operating conditions can be accurately measured, thereby revealing the performance evolution law in the high-power microwave environment, providing important data support and theoretical basis for the high-power microwave protection design of the power supply module and electric drive module of UAVs, and helping to improve the reliability and safety of UAVs in complex electromagnetic environments.

[0061] In one embodiment, as Figure 1 shown, a power device degradation online testing system is provided, including: a high-power microwave irradiation device 10, a switching state loading device 20, and a semiconductor parameter analyzer 30.

[0062] The power device 40 is a semiconductor device used to process and control the conversion and transmission of electrical energy. In the embodiments of the present application, the power device 40 is the power device 40 to be subjected to degradation testing, which can be denoted as DUT. For example, the power device 40 can be a power device 40 applied in a UAV (such as a motor module and / or an electric drive module). The power device 40 can include any one of silicon (Si) devices, silicon carbide (SiC) devices, and gallium nitride (GaN) devices, and the power device 40 can also include at least one of insulated gate bipolar transistors (IGBTs), metal oxide field effect transistors (MOSFETs), and thyristors. In applications, the power device 40 to be subjected to degradation testing can be selected according to actual test requirements, and no excessive limitation is made here.

[0063] The power device 40 is disposed within the high-power microwave irradiation device 10. The high-power microwave irradiation device 10 is used to provide high-power microwave irradiation stress to the power device 40. During the test, the power device 40 can be disposed within the high-power microwave irradiation device 10 to apply high-power microwave irradiation stress to the power device 40 within the high-power microwave irradiation device 10, thereby realizing the degradation test under high-power microwave irradiation stress.

[0064] The power device 40 is respectively connected to the switching state loading device 20 and the semiconductor parameter analyzer 30. The power device 40 includes a gate, a first pole, and a second pole. For example, if the power device 40 includes a gallium nitride device, the gallium nitride device includes a gate, a source, and a drain. Another example is that if the power device 40 includes an insulated gate bipolar transistor, the insulated gate bipolar transistor includes a gate, a collector, and an emitter. In applications, the corresponding electrodes can be determined according to the type of the power device 40, and no excessive limitation is made here. The gate, the first pole, and the second pole of the power device 40 are respectively connected to the switching state loading device 20. The gate, the first pole, and the second pole of the power device 40 are respectively connected to the semiconductor parameter analyzer 30.

[0065] The switching state loading device 20 is used to control the power device 40 to operate in a target switching state. The target switching state includes a soft switching state or a hard switching state. Among them, soft switching means that through specific design, the power device 40 reduces or eliminates the overlap of voltage and current as much as possible during its switching process, thereby reducing the switching loss. Soft switching can be achieved in two ways: zero voltage switching and zero current switching. Among them, zero voltage switching means that before the switch is turned on, it is ensured that the voltage has dropped to zero, so that when the switch is turned on, there is no overlap of voltage and current, reducing the conduction loss. Zero current switching means that before the switch is turned off, it is ensured that the current has dropped to zero, so that when the switch is turned off, there is no overlap of voltage and current, reducing the turn-off loss. Hard switching means that during the switching conversion of the power device 40, there are relatively large values of voltage and current at the same time, that is, at the moment of switching, the voltage is either zero or the maximum value, and the current is also either zero or the maximum value.

[0066] The semiconductor parameter analyzer 30 is used to obtain the initial electrical parameters of the power device 40, obtain the test electrical parameters of the power device 40 under high-power microwave irradiation stress in the target switching state, and determine the online degradation test results of the power device 40 based on the initial electrical parameters and the test electrical parameters. Among them, the online degradation test results are used to represent the degradation characteristics of the power device 40 under high-power microwave irradiation stress in the target switch. The initial electrical parameters refer to the electrical parameters obtained by testing the power device 40 before being applied with high-power microwave irradiation stress. The test electrical parameters refer to the electrical parameters obtained by testing the power device 40 under the target switching state (soft switching state or hard switching state) when being applied with high-power irradiation stress. The test electrical parameters can include the electrical parameters obtained during the process of applying high-power microwave irradiation stress to the power device 40 in the target switching state, or can also include the electrical parameters obtained after applying high-power microwave irradiation stress to the power device 40 in the target switching state, which is not limited herein.

[0067] Exemplarily, the semiconductor parameter analyzer 30 may include at least one of a dynamic parameter test device and a static parameter test device. Among them, the dynamic parameter test device can be used to test the dynamic parameters of the power device 40. For example, the turn-off time, on-resistance, etc. of the power device 40. The dynamic parameter test device may include an oscilloscope and can test the voltage and current of the power device 40 online in real time. The static parameter test device can be used to test the static parameters of the power device 40. For example, the transfer characteristics, output characteristics, leakage characteristics, etc. of the power device 40.

[0068] In the embodiments of the present application, the electrical parameters, including the initial electrical parameters and the test electrical parameters, are key indicators for describing the electrical performance of the power device 40. The electrical parameters can include at least one of transfer characteristics, output characteristics, and leakage characteristics. Among them, the transfer characteristics describe the relationship between the input voltage and the output current. The output characteristics reflect the voltage-current relationship of the power device 40 under different working conditions. The leakage characteristic refers to the tiny current passing through the power device 40 in the off state, that is, when no signal is actively applied to turn on the power device 40. In applications, the electrical parameters are not limited to the above types and can also be other indicators capable of evaluating the device degradation degree. For example, the electrical parameters can also include threshold voltage, breakdown voltage, on-resistance, switching speed, etc., which are not overly limited herein.

[0069] The on-line test system for power device degradation provided by the above embodiments includes a high-power microwave irradiation device 10, a switching state loading device 20, and a semiconductor parameter analyzer 30. Among them, the power device 40 is arranged in the high-power microwave irradiation device 10 and is respectively connected to the switching state loading device 20 and the semiconductor parameter analyzer 30; the high-power microwave irradiation device 10 is used to provide high-power microwave irradiation stress to the power device 40, and the switching state loading device 20 is used to control the power device 40 to work in a target switching state, where the target switching state includes a soft switching state or a hard switching state, and the semiconductor parameter analyzer 30 is used to obtain the initial electrical parameters of the power device 40, obtain the test electrical parameters of the power device 40 when the high-power microwave irradiation stress is applied in the target switching state, and determine the on-line test result of the power device 40 degradation according to the initial electrical parameters and the test electrical parameters. This system realizes the degradation test of the power device 40 after being applied with high-power microwave irradiation stress in the soft switching state and the hard switching state respectively, and can accurately evaluate the electrical parameter degradation characteristics of the power device 40, so as to provide strong technical support and data support for the reliability research and protection design of the power device 40 in the high-power microwave irradiation environment, and has broad application prospects.

[0070] The on-line test system for power device degradation provided by the embodiments of the present application can accurately control the relevant parameters of the high-power microwave irradiation stress, such as the irradiation power and the irradiation time, through the high-power microwave irradiation device 10, so as to ensure the stability and repeatability of the test conditions. Moreover, the system can flexibly switch the power device 40 to work in the soft switching state and the hard switching state through the switching state loading device 20, providing a reliable test platform for studying the degradation characteristics of power devices under different working conditions.

[0071] In addition, the on-line test system for power device degradation provided by the embodiments of the present application can measure the electrical parameters of the power device 40 in real time and accurately through the semiconductor parameter analyzer 30, including key indexes such as transfer characteristics, output characteristics, and leakage current. And through on-line monitoring, the system can capture the transient changes of the power device 40 under high-power microwave irradiation and the parameter degradation law under the action of soft and hard switching stresses in real time, so as to ensure the accuracy and integrity of the data. It should be noted that the electrical parameters of the power device 40 can be monitored on-line or off-line. Among them, on-line monitoring can be understood as obtaining the on-line test result of the power device 40 degradation in real time according to the initial electrical parameters and the test electrical parameters; off-line monitoring can be understood as obtaining the degradation test result of the power device 40 according to the initial electrical parameters and the test electrical parameters in the case of demand; the real-time performance of on-line monitoring is higher than that of off-line monitoring. In applications, on-line monitoring and / or off-line monitoring can be selected according to actual needs, and no more limitations are made here.

[0072] Moreover, the on-line power device degradation test system provided by the embodiments of the present application can synchronously apply high-power microwave irradiation stress while realizing the switching state transition of the device, achieving precise control of multiple experimental parameters such as irradiation power, irradiation time, and switching state. This multi-parameter collaborative control ability provides strong support for in-depth research on the performance evolution of power devices 40 in complex electromagnetic environments.

[0073] In addition, the on-line power device degradation test system provided by the embodiments of the present application is compatible with various types of power devices 40, including silicon devices, silicon carbide devices, and gallium nitride devices, etc. These materials can be widely used in high-power, high-frequency, and high-temperature scenarios. The compatibility of the system enables it to meet the test requirements of different devices and has wide applicability.

[0074] Furthermore, the on-line power device degradation test system provided by the embodiments of the present application can provide experimental data support for high-power microwave protection design for products such as power modules and electric drive modules in unmanned aerial vehicles, which helps to improve the reliability and safety of products such as unmanned aerial vehicles in complex electromagnetic environments. Moreover, the system is also applicable to product development units, product application units, and third-party evaluation agencies, etc., and has broad application prospects and market potential.

[0075] In one embodiment, as Figure 2 shown, the high-power microwave irradiation device 10 includes a resonant cavity 11, a high-power microwave radiation source 12, and an excitation probe 13. Among them, the high-power microwave radiation source 12 is used to provide high-power microwave signals. The power and frequency of the high-power microwave signals can be set accordingly according to the test requirements.

[0076] The resonant cavity 11 refers to a structure that can store electromagnetic wave energy at a specific frequency. The design of the resonant cavity 11 can determine its resonant frequency by precisely controlling its size and shape. Exemplarily, the resonant cavity 11 is a cavity enclosed by multiple irregular surfaces. For example, the resonant cavity 11 is a cavity formed by removing a wedge-shaped structure from one side of a cuboid. Exemplarily, the frequency of the high-power microwave signal is 2.45 GHz. In some other examples, the frequency of the high-power microwave signal can also be other values, such as 2.35 GHz, 2.4 GHz, 2.5 GHz, 2.55 GHz, etc., and no further limitation is made here. The power device 40 is disposed inside the resonant cavity 11. The position of the power device 40 can be set accordingly according to the position of the high-power microwave irradiation stress generated by the resonant cavity 11, and no limitation is made here.

[0077] The excitation probe 13 is disposed inside the resonant cavity 11. Among them, the excitation probe 13 and the power device 40 are spaced apart and disposed inside the resonant cavity 11. The excitation probe 13 is connected to the high-power microwave radiation source 12. The excitation probe 13 is used to generate resonance inside the resonant cavity 11 according to the high-power microwave signal and provide high-power microwave irradiation stress to the power device 40. In application, the high-power microwave signal generated by the high-power microwave radiation source 12 is transmitted to the excitation probe 13 and generates an electromagnetic field through resonance inside the resonant cavity 11, and this electromagnetic field is used to simulate the high-power microwave irradiation stress.

[0078] In the on-line test system for power device degradation provided by the above embodiment, the high-power microwave irradiation device 10 includes a resonant cavity 11, a high-power microwave radiation source 12, and an excitation probe 13. By respectively disposing the power device 40 and the excitation probe 13 inside the resonant cavity 11, providing a high-power microwave signal through the high-power microwave radiation source 12, and generating resonance inside the resonant cavity 11 according to the high-power microwave signal through the excitation probe 13 and providing high-power microwave irradiation stress to the power device 40. In this way, through the mutual combination of the resonant cavity 11, the high-power microwave radiation source 12, and the excitation probe 13, precise control of the high-power microwave irradiation stress can be achieved, including but not limited to parameters such as irradiation power and irradiation time, ensuring the stability and repeatability of the test conditions, providing a test platform for the degradation test of the power device 40 under different application scenarios, and providing technical support and data support for in-depth research on the performance evolution of the power device 40 in a complex electromagnetic environment, improving the reliability of the test system.

[0079] As Figure 3 shown, in one embodiment, the high-power microwave radiation source 12 includes a microwave signal source 121, a power amplifier 122, a circulator 123, and a directional coupler 124.

[0080] Among them, the microwave signal source 121 is used to provide a microwave signal. Exemplarily, the microwave signal source 121 can be used to provide a microwave signal with adjustable power and / or adjustable frequency. In application, for different types of power devices 40 and different high-power microwave irradiation test requirements, the microwave signal generated by the microwave signal source 121 can be controlled through the microwave signal source 121. In this way, precise regulation can be carried out for different types of power devices 40 and their test conditions, improving the controllability and flexibility of the system.

[0081] The power amplifier 122 is connected to the microwave signal source 121. Among them, the input end of the power amplifier 122 is connected to the microwave signal source 121. The power amplifier 122 is used to perform power amplification processing on the microwave signal from the microwave signal source 121 and output a high-power microwave signal. The power amplifier 122 aims to amplify the power of the microwave signal to reach the high-power level required for testing. In this way, the power requirement for the microwave signal is reduced, that is, even if the power of the microwave signal is low, it can still provide a high-power microwave irradiation test environment, which not only improves the flexibility of the system but also ensures the effective utilization of energy during the test.

[0082] The circulator 123 is respectively connected to the power amplifier 122 and the directional coupler 124. The input end of the circulator 123 is connected to the output end of the power amplifier 122, and the output end of the circulator 123 is connected to the input end of the directional coupler 124. The circulator 123 is used to transmit the high-power microwave signal from the power amplifier 122 to the directional coupler 124. The circulator 123 can transmit the high-power microwave signal from the power amplifier 122 to the directional coupler 124 unidirectionally, and at the same time provide necessary isolation protection to prevent the reverse signal from damaging sensitive components (such as the microwave signal source 121). In this way, unnecessary interference and losses can be effectively avoided, ensuring the best performance of the signal transmission path.

[0083] The directional coupler 124 is connected to the excitation probe 13. Among them, the DC output end of the directional coupler 124 is connected to the excitation probe 13. The directional coupler 124 is used to transmit the high-power microwave signal from the circulator 123 to the excitation probe 13. The directional coupler 124 helps to monitor and adjust the test process in real time, providing a stable and controllable irradiation stress for the power device 40, thereby improving the reliability and stability of the test results.

[0084] In the on-line test system for power device degradation provided by the above embodiment, the high-power microwave radiation source 12 includes a microwave signal source 121, a power amplifier 122, a circulator 123, and a directional coupler 124. This system provides a microwave signal through the microwave signal source 121, performs power amplification processing on the microwave signal from the microwave signal source 121 through the power amplifier 122, and outputs a high-power microwave signal. And through the circulator 123, the high-power microwave signal from the power amplifier 122 is transmitted to the directional coupler 124, and through the directional coupler 124, the high-power microwave signal from the circulator 123 is transmitted to the excitation probe 13, so as to be able to provide a high-power microwave signal to provide a high-power microwave irradiation stress to the power device 40. In this way, the efficient and accurate test of the power device 40 under high-power microwave irradiation conditions is realized, and it also helps to improve the technical level of the entire test platform, providing strong support for evaluating and improving the long-term reliability of the power device 40.

[0085] Please continue to refer to Figure 3 , in one embodiment, the online power device degradation test system further includes a power meter 50. Among them, the directional coupler 124 includes a first directional coupler 1241 and a second directional coupler 1242.

[0086] The input end of the first directional coupler 1241 is connected to the circulator 123. The input end of the first directional coupler 1241 can receive the high-power microwave signal from the circulator 123. The through output end of the first directional coupler 1241 is connected to the input end of the second directional coupler 1242. The through output end of the first directional coupler 1241 can transmit the high-power microwave signal from the circulator 123 to the second directional coupler 1242. The coupled output end of the first directional coupler 1241 is connected to the first terminal CH1 of the power meter 50. The first directional coupler 1241 can couple the high-power microwave signal from the circulator 123 and output the first power through the coupled output end.

[0087] The input end of the second directional coupler 1242 can receive the high-power microwave signal from the first directional coupler 1241. The DC output end of the second directional coupler 1242 is connected to the excitation probe 13. The through output end of the second directional coupler 1242 can transmit the high-power microwave signal from the first directional coupler 1241 to the excitation probe 13. The coupled output end of the second directional coupler 1242 is connected to the second terminal CH2 of the power meter 50. The second directional coupler 1242 can couple the high-power microwave signal from the first directional coupler 1241 and output the second power through the coupled output end.

[0088] The power meter 50 is used to detect the first power coupled and output by the first directional coupler 1241 and the second power coupled and output by the second directional coupler 1242. Among them, the first power coupled and output by the first directional coupler 1241 can be understood as the input power, and the second power coupled and output by the second directional coupler 1242 can be understood as the reflected power.

[0089] In the application, the power difference between the first power and the second power can be calculated, and whether the high-power microwave irradiation device 10 provides stable high-power microwave irradiation stress can be judged according to the power difference. Exemplarily, if the absolute value of the power difference between the first power and the second power is greater than or equal to 20 dBm, it is determined that the high-power microwave irradiation device 10 provides stable high-power microwave irradiation stress. In this way, the input power and the reflected power of the high-power microwave signal source 121 can be detected in real time by the power meter 50, the real-time detection of the high-power microwave irradiation stress can be realized, and stable high-power microwave irradiation stress can be ensured for the power device 40.

[0090] Such as Figure 4As shown, in one embodiment, the on-line power device degradation test system further includes a device fixture 60. The device fixture 60 includes a fixture body 61 and signal terminals 62. Among them, the fixture body 61 is used to carry the power device 40. The power device 40 can be disposed on one side of the fixture body 61. In this way, the power device 40 can be placed in the high-power microwave irradiation device 10 through the fixture body 61 of the device fixture 60 to apply high-power microwave irradiation stress to the power device 40.

[0091] The signal terminals 62 are located on the side of the fixture body 61 away from the power device 40. The signal terminals 62 are disposed outside the high-power microwave irradiation device 10. The signal terminals 62 are respectively used to connect to the power device 40, the switching state loading device 20, and the semiconductor parameter analyzer 30. In this way, the connection between the power device 40 and the switching state loading device 20 and the semiconductor parameter analyzer 30 can be realized through the signal terminals 62 of the device fixture 60, reducing the connection difficulty between devices and providing technical support for testing the degradation characteristics of the power device 40 under high-power microwave irradiation stress in the soft switching state and the hard switching state respectively.

[0092] Exemplarily, the signal terminals 62 include at least three signal terminals 62. For example, the device fixture 60 includes three signal terminals 62, namely a gate signal terminal G, a source signal terminal S, and a drain signal terminal D; taking the power device 40 as a gallium nitride device as an example, the gate signal terminal S is connected to the gate of the gallium nitride device, the source signal terminal S is connected to the source of the gallium nitride device, and the drain signal terminal D is connected to the drain of the gallium nitride device; and the three signal terminals 62 are respectively connected to the switching state loading device 20 and the semiconductor parameter analyzer 30. Also, the number of signal terminals 62 can also be four or more, which can be specifically set according to test requirements and will not be overly limited here.

[0093] One side of the fixture body 61 close to the power device 40 is disposed inside the high-power microwave irradiation device 10. One side of the fixture body 61 close to the signal terminal 62 is disposed outside the high-power microwave irradiation device 10. Exemplarily, the fixture body 61 includes a first fixture body 611 and a second fixture body 612 located on one side of the first fixture body 611. Wherein, the side of the second fixture body 612 away from the first fixture body 611 is used to carry the power device 40, and the second fixture body 612 can be disposed inside the high-power microwave irradiation device 10; a signal terminal 62 is disposed on the side of the first fixture body 611 away from the second fixture body 612, and the second fixture body 612 can be disposed outside the high-power microwave irradiation device 10. Exemplarily, the projection of the second fixture body 612 in the direction from the first fixture body 611 to the power device 40 covers the first fixture body 611. Thus, by providing the first fixture body 611 and the second fixture body 612, the signal terminal 62 can be disposed outside the high-power microwave irradiation device 10 through the first fixture body 611, and the power device 40 can be disposed inside the high-power microwave irradiation device 10 through the second fixture body 612, thereby providing support for testing and improving the reliability of the system.

[0094] Please continue to refer to Figure 2 , in one embodiment, the switch state loading device 20 includes a gate drive circuit 21, a power circuit 22, and a control circuit 23.

[0095] The gate drive circuit 21 is connected to the gate of the power device 40. The gate drive circuit 21 is used to provide a gate drive signal. Exemplarily, the gate drive circuit 21 can include a signal source and an auxiliary power supply. Wherein, the auxiliary power supply is connected to the signal source, and the auxiliary power supply is used to provide a supply voltage for the signal source. The signal source is used to provide a gate drive signal under the action of the supply voltage. The gate drive signal can include an enable level and a non-enable level; wherein, the power device 40 can be turned on in response to the enable level, and the power device 40 can also be turned off in response to the non-enable level. Exemplarily, the gate drive signal can be a square wave signal. The specific type of the gate drive signal can be specifically set according to the gate drive requirements of the power device 40, and no excessive limitation is made here. Thus, through the gate drive signal provided by the gate drive circuit 21, the on-off state of the power device 40 can be effectively controlled. For example, parameters such as the switching frequency and duty cycle of the power device 40 can be controlled to implement the degradation test of the power device 40 and meet various test requirements.

[0096] The power circuit 22 is respectively connected to the first pole and the second pole of the power device 40. The power circuit 22 is used to control the power device 40 to operate in a target switching state when the gate driving signal drives the power device 40. The power circuit 22 can control the power device 40 to operate in a soft switching state or a hard switching state when the gate driving signal drives the power device 40. The power circuit 22 can provide technical support for the power device 40 to operate in a soft switching state and a hard switching state.

[0097] The control circuit 23 is respectively connected to the gate driving circuit 21 and the power circuit 22. The control circuit 23 is used to control the operating states of the gate driving circuit 21 and the power circuit 22 respectively, so that the power device 40 operates in a target switching state. Among them, the control circuit 23 can control the gate driving circuit 21 and the power circuit 22 to be in an operating state respectively, so that the power device 40 operates in a soft switching state or a hard switching state. Among them, the control circuit 23 can control the operating state of the gate driving circuit 21 to control the gate driving signal output by the gate driving circuit 21, so as to control the switching frequency, duty cycle, etc. of the power device 40. The control circuit 23 can control the operating state of the power circuit 22 to support the switching of the power device 40 between the soft switching state and the hard switching state. Exemplarily, the control circuit 23 can be an FPGA (Field Programmable Gate Array) controller.

[0098] In the above embodiment, the switching state loading device 20 provides a gate driving signal through the gate driving circuit 21, and controls the power device 40 to operate in a soft switching state or a hard switching state when the gate driving signal drives the power device 40 through the power circuit 22, and controls the operating states of the gate driving circuit 21 and the power circuit 22 respectively through the control circuit 23, so that the power device 40 operates in a soft switching state or a hard switching state. In this way, the power device 40 can be flexibly switched between the soft switching state and the hard switching state, providing technical support for studying the degradation characteristics of electrical parameters under high-power microwave irradiation stress under different working conditions.

[0099] Please continue to refer to Figure 2 , in one embodiment, the power circuit 22 includes a gating module 221, a first charge and discharge module 222, a second charge and discharge module 223, and a DC power supply Vin.

[0100] The first terminal of the gating module 221 is connected to the second pole of the power device 40. One second terminal HS of the gating module 221 is respectively connected to the first terminal of the first charge-discharge module 222 and the first terminal of the DC power supply Vin. The other second terminal SS of the gating module 221 is respectively connected to the second terminal of the first charge-discharge module 222 and the first terminal of the second charge-discharge module 223. The control terminal of the gating module 221 is connected to the control circuit 23. The gating module 221 is used to selectively conduct the paths between the two second terminals (HS and SS) of the gating module 221 and the first terminal of the gating module 221, that is, the second pole of the power device 40. Exemplarily, the gating module 221 includes a single-pole multi-throw switch. For example, the gating module 221 includes a single-pole double-throw switch.

[0101] The second terminal of the second charge-discharge module 223 is respectively connected to the second pole of the power device 40 and the second terminal of the DC power supply Vin. Among them, the first charge-discharge module 222 and the second charge-discharge module 223 can be respectively used for charge-discharge processing to simulate soft-switching stress and hard-switching stress for the power device 40. The DC power supply Vin can be a high-voltage DC power supply Vin, and the DC power supply Vin is used to provide a DC voltage. The specific value of this DC voltage can be set accordingly according to the driving requirements of the power device 40, and will not be limited too much here.

[0102] Among them, when the gating module 221 conducts the first terminal of the first charge-discharge module 222 and the DC power supply Vin to the second pole of the power device 40 respectively, that is, switches to the HS terminal, the power device 40 operates in the hard-switching state; in this case, the first charge-discharge module 222 and the second charge-discharge module 223 are connected in series. When the gating module 221 conducts the second terminal of the first charge-discharge module 222 and the first terminal of the second charge-discharge module 223 to the second pole of the power device 40 respectively, that is, switches to the SS terminal, the power device 40 operates in the soft-switching state; in this case, the first charge-discharge module 222 and the second charge-discharge module 223 are connected in parallel.

[0103] In the above embodiment, the power circuit 22 includes a gating module 221, a first charge-discharge module 222, a second charge-discharge module 223, and a DC power supply Vin. The power circuit 22 provides a DC voltage through the DC power supply Vin, and selectively conducts the paths between the two second terminals of the gating module 221 and the second pole of the power device 40 through the gating module 221, and respectively performs charge-discharge processing through the first charge-discharge module 222 and the second charge-discharge module 223 to simulate soft-switching stress and hard-switching stress for the power device 40. In this way, by controlling the on-off state of the gating module 221, the switching between the soft-switching state and the hard-switching state of the power device 40 can be realized, so that the electrical parameter degradation evaluation after being applied with high-power microwave irradiation stress in the soft-switching state and the hard-switching state respectively can be realized, and the flexibility is high.

[0104] Please continue to refer to Figure 2 Figure 2 , in one embodiment, both the first charge and discharge module 222 and the second charge and discharge module 223 include a capacitor and a resistor connected in parallel. Exemplarily, the first charge and discharge module 222 includes a first capacitor Co1 and a first resistor Ro1; the second charge and discharge module 223 includes a second capacitor Co2 and a second resistor Ro2; wherein, the first end of the first capacitor Co1 is respectively connected to the first end of the first resistor Ro1, one second end of the gating module 221, and the first end of the DC power supply Vin, and the second end of the first capacitor Co1 is respectively connected to the second end of the first resistor Ro1, the first end of the second capacitor Co2, the first end of the second resistor Ro2, and the other second end of the gating module 221, and the second end of the second capacitor Co2 is respectively connected to the second end of the second resistor Ro2, the second end of the DC power supply Vin, and the first pole of the power device 40.

[0105] Please continue to refer to Figure 2 Figure 2 , in one embodiment, the power circuit 22 further includes a third capacitor Cin and a third resistor R L L , wherein, the first end of the third capacitor Cin is connected to the first end of the DC power supply Vin, and the second end of the third capacitor Cin is connected to the second end of the DC power supply Vin. The third capacitor Cin plays a role in stabilizing the voltage, which helps to improve the stability and reliability of the power circuit 22. The third resistor R L L 's first end is connected to the second pole of the power device 40, and the third resistor R L L 's falling into single is connected to the first end of the gating module 221. The third resistor R L L plays a role in protecting the circuit.

[0106] Based on the same application concept, the embodiment of the present application provides a method for online testing of power device degradation. This method can be applied to the power device degradation online testing system provided in any of the foregoing embodiments. The implementation solutions provided by this method to solve problems are similar to the implementation solutions recorded in the above system. Therefore, the specific limitations in one or more embodiments of the power device degradation online testing method provided below can refer to the limitations on the power device degradation online testing system in the above text, and will not be repeated here.

[0107] Combined with Figures 1 to 4 , as Figure 5 Figure 5 shown, a method for online testing of power device degradation is provided. This method includes the following steps S502 to step S508.

[0108] S502: Obtain the initial electrical parameters of the power device.

[0109] In an application, the semiconductor parameter analyzer 30 can be connected to the power device 40, and before applying high-power microwave irradiation stress to the power device 40 and when the power device 40 is in the off state, the initial electrical parameters of the power device 40 can be obtained by using the semiconductor parameter analyzer 30. For specific introductions of the semiconductor parameter analyzer 30 and the initial electrical parameters, reference can be made to the relevant content above, which will not be elaborated here.

[0110] S504: Apply high-power microwave irradiation stress to the power device and control the power device to operate in a target switching state; the target switching state includes a soft switching state or a hard switching state.

[0111] In an application, the high-power microwave irradiation device 10 can be used to apply high-power microwave irradiation stress to the power device 40, and the switching state loading device 20 can be used to control the power device 40 to operate in a soft switching state or a hard switching state. For specific introductions of the high-power microwave irradiation device 10 and the switching state loading device 20, reference can be made to the relevant content above, which will not be elaborated here.

[0112] S506: Obtain the test electrical parameters of the power device when high-power microwave irradiation stress is applied in the target switching state.

[0113] In an application, the semiconductor parameter analyzer 30 can be used to obtain the test electrical parameters of the power device 40 when high-power microwave irradiation stress is applied in the target switching state.

[0114] S508: Determine the online degradation test result of the power device according to the initial electrical parameters and the test electrical parameters.

[0115] In an application, the semiconductor parameter analyzer 30 can be used to determine the online degradation test result of the power device 40 according to the initial electrical parameters and the test electrical parameters.

[0116] For the above online power device degradation test method, the initial electrical parameters of the power device 40 are obtained, high-power microwave irradiation stress is applied to the power device 40, and the power device 40 is controlled to operate in a target switching state. The target switching state includes a soft switching state or a hard switching state. The test electrical parameters of the power device 40 when high-power microwave irradiation stress is applied in the target switching state are obtained, and the online degradation test result of the power device 40 is determined according to the initial electrical parameters and the test electrical parameters. This method realizes the online degradation test of the power device 40 after being applied high-power microwave irradiation stress in the soft switching state and the hard switching state respectively, and can evaluate the electrical parameter degradation characteristics of the power device 40 in real time, accurately and comprehensively, so as to provide strong technical support and data support for the reliability research and protection design of the power device 40 in a high-power microwave irradiation environment, and has broad application prospects.

[0117] Combined with Figures 1 to 4 , such asFigure 6 As shown, in one embodiment, in step S504, a high-power microwave irradiation stress is applied to the power device, and the power device is controlled to operate in the target switching state, including the following steps S602 to S606.

[0118] S602: Obtain the test condition parameters for the power device.

[0119] S604: Apply a high-power microwave irradiation stress to the power device according to the irradiation power, and control the power device to operate in the target switching state according to the target switching state parameters.

[0120] S606: After the high-power microwave irradiation stress is applied to the power device operating in the target switching state for the irradiation time, stop applying the high-power microwave irradiation stress, and control the power device to stop operating.

[0121] The test condition parameters include high-power microwave irradiation condition parameters and target switching state parameters. The high-power microwave irradiation condition parameters are used to represent the relevant parameters for applying the high-power microwave irradiation stress to the power device 40. The high-power microwave irradiation condition parameters include the irradiation power and the irradiation time. Among them, the irradiation power refers to the power of the high-power microwave irradiation stress, and the irradiation time refers to the duration of applying the high-power microwave irradiation stress to the power device 40. The target switching state parameters are used to represent the relevant parameters for the power device 40 to operate in the target switching state. For example, they may include the switching state type, the switching frequency, the duty cycle, etc.

[0122] In application, the irradiation power, the irradiation time, and the target switching state parameters for applying the high-power microwave irradiation stress to the power device 40 can be obtained, and the high-power microwave irradiation stress is applied to the power device 40 by using the high-power microwave irradiation device 10 according to the irradiation power and the irradiation time, and the power device 40 is controlled to operate in the target switching state by the switching state loading device 20 according to the target switching state parameters. Among them, the irradiation power and the irradiation time can be flexibly set according to the test requirements and will not be limited too much here.

[0123] The online test method for power device degradation provided by the above embodiments obtains the test condition parameters of the power device 40, applies high-power microwave irradiation stress to the power device 40 according to the irradiation power, and controls the power device 40 to operate in the target switching state according to the target switching state parameters. After the high-power microwave irradiation stress is applied to the power device 40 for the irradiation time when the power device 40 operates in the target switching state, the application of the high-power microwave irradiation stress is stopped, and the power device 40 is controlled to stop working. In this way, the test parameters such as irradiation power, irradiation time, and hard and soft switching states can be accurately controlled according to the test requirements, and the accurate online test and evaluation of the electrical parameter degradation characteristics of the power device 40 under high-power microwave irradiation stress under different working conditions can be realized, so as to meet various test requirements and provide sufficient data support.

[0124] Please continue to refer to Figures 1 to 4 , in one embodiment, an online test method for power device degradation is provided, and this method is applied to an online test system for power device degradation.

[0125] The system includes a high-power microwave irradiation device 10, a semiconductor parameter analyzer 30, a high-voltage DC power supply Vin, an auxiliary power supply, an FPGA microcontroller, a switching state loading device 20, a control signal cable, a power supply cable, a test cable, a device fixture 60, a test socket, and a power meter 50.

[0126] The high-power microwave irradiation device 10 applies high-power microwave irradiation stress to the power device 40 under test through the device fixture 60. The power device 40 under test is connected to the switching state loading device 20 through the test socket. The semiconductor parameter analyzer 30 is connected to the power device 40 under test through the test cable. The high-voltage DC power supply Vin and the auxiliary power supply are connected to the switching state loading device 20 through the power supply cable. The FPGA microcontroller is connected to the switching state loading device 20 through the control signal cable.

[0127] The high-power microwave irradiation device 10 includes a microwave signal generator, a solid-state power amplifier 122, a directional coupler 124, a circulator 123, a resonant cavity 11, an excitation probe 13, and a coaxial cable. Among them, the resonant cavity 11 applies high-power microwave irradiation stress to the power device 40 under test through the device fixture 60. The microwave signal generator, the solid-state power amplifier 122, the directional coupler 124, and the circulator 123 are connected together through the coaxial cable, and their function is to amplify the microwave signal and inject it into the excitation probe 13, and finally generate high-power microwave irradiation stress in the resonant cavity 11. And, the directional coupler 124 is connected to the power meter 50. For its specific structure and introduction, reference can be made to Figure 2 and Figure 3 and the relevant content above, which will not be elaborated here.

[0128] The switch state loading device 20 includes a gate drive circuit 21, a control circuit 23, and a power circuit 22. For its specific structure, reference can be made to Figure 2 and the relevant content above, which will not be elaborated here.

[0129] As Figure 7 shown, the on-line power device degradation testing method includes the following steps S702 to S722.

[0130] S702: Obtain the test condition parameters for the power device, set the power and frequency of the microwave signal source, and connect the microwave signal source, solid-state power amplifier, directional coupler, circulator, resonant cavity, and excitation probe through coaxial cables. Among them, the frequency of the microwave signal source can be set to 2.45 GHz.

[0131] S704: Set the FPGA controller according to the test condition parameters to set the switching frequency, duty cycle, and target operating state of the power device 40, and connect the FPGA controller to the corresponding signal ports on the switch state loading device through control cables. At the same time, connect the auxiliary power supply and the high-voltage DC power supply to the corresponding circuits respectively.

[0132] In application, the switching frequency, duty cycle, and target operating state (soft switch or hard switch) of the power device 40 can be set by writing a corresponding computer program such as a Verilog HDL program and downloading it to the FPGA controller, so as to realize the setting of the switching state of the power device 40.

[0133] S706: Set the semiconductor parameter analyzer according to the test condition parameters.

[0134] In application, the required test curves can be programmed on the semiconductor parameter analyzer 30.

[0135] S708: Place the power device in the radiation cavity through the device fixture.

[0136] S710: Connect the pins of the power device to the switch state loading device and the semiconductor parameter analyzer respectively through the signal terminals on the device fixture.

[0137] S712: Turn on the semiconductor parameter analyzer to perform the initial parameter test of the power device and obtain the initial electrical parameters of the power device.

[0138] S714: Turn on the output button of the microwave signal source to apply high-power microwave irradiation stress to the power device.

[0139] S716: Turn on the auxiliary power supply. After the gate drive circuit works properly, turn on the high-voltage DC power supply Vin. And after the power supply is stable, control the power device to work in the soft-switching state or the hard-switching state through the FPGA control signal.

[0140] S718: After the power device works for the preset irradiation time, turn off the microwave signal source, stop applying the high-power microwave irradiation stress, and turn off the high-voltage source and the auxiliary power supply. The power device stops working.

[0141] S720: Turn on the semiconductor parameter analyzer to perform parameter tests and obtain the test electrical parameters of the power device.

[0142] S722: After the parameter tests are completed, export the experimental data. The test data includes the online test results of the degradation of the power device.

[0143] The above online test system and method for the degradation of power devices can test the parameter degradation characteristics of power devices 40 under high-power microwave irradiation in the soft-switching and hard-switching states. This system integrates the high-power microwave irradiation device 10, the switching state loading device 20, and the semiconductor parameter analyzer 30, realizing the accurate evaluation of the parameter degradation of power devices 40 under high-power microwave irradiation in the soft-switching and hard-switching states. Moreover, while applying the high-power microwave irradiation stress to the power device 40, the system can make the power device 40 work in the soft-switching or hard-switching state, thus accurately simulating the actual working conditions of the device. Through the semiconductor parameter analyzer 30, the system can obtain the degradation of various electrical parameters of the device in real time, including but not limited to key indicators such as leakage current, threshold voltage drift, and transconductance change. This integrated design not only improves the test efficiency but also ensures the accuracy and reliability of the test results. This method can accurately measure the parameter degradation characteristics of the device under different working conditions by respectively simulating the soft-switching state and the hard-switching state, thereby revealing the performance evolution law of the device in the high-power microwave environment. This test method provides important data support and theoretical basis for the high-power microwave protection design of the power supply module and the electric drive module of the unmanned aerial vehicle, helping to improve the reliability and safety of the unmanned aerial vehicle in the complex electromagnetic environment.

[0144] It should be understood that although the steps in the flowcharts involved in the above-described embodiments are shown in sequence according to the arrows, these steps are not necessarily executed in the order indicated by the arrows. Unless there is a clear indication in this article, there is no strict order restriction for the execution of these steps, and these steps can be executed in other orders. Moreover, at least a part of the steps in the flowcharts involved in the above-described embodiments may include multiple steps or multiple stages. These steps or stages are not necessarily executed at the same time, but can be executed at different times. The execution order of these steps or stages is not necessarily sequential, but can be executed alternately or in turn with at least a part of other steps or steps or stages in other steps.

[0145] The technical features of the above-described embodiments can be combined arbitrarily. For the sake of brevity of description, not all possible combinations of the various technical features in the above-described embodiments are described. However, as long as there is no contradiction in the combination of these technical features, it should be considered to be within the scope described in this specification.

[0146] The above-described embodiments only represent several implementation manners of the present application. The description is relatively specific and detailed, but it should not be construed as a limitation on the scope of the present application. It should be noted that for those of ordinary skill in the art, without departing from the concept of the present application, several modifications and improvements can still be made, and these all belong to the protection scope of the present application. Therefore, the protection scope of the present application should be subject to the appended claims.

Claims

1. An on-line test system for power device degradation, characterized in that, Including: A high-power microwave irradiation device, a switching state loading device, and a semiconductor parameter analyzer; the power device is arranged in the high-power microwave irradiation device and is respectively connected to the switching state loading device and the semiconductor parameter analyzer; wherein, The high-power microwave irradiation device is used to provide high-power microwave irradiation stress to the power device; The switching state loading device is used to control the power device to operate in a target switching state; the target switching state includes a soft switching state or a hard switching state; The semiconductor parameter analyzer is used to obtain the initial electrical parameters of the power device, obtain the test electrical parameters of the power device when the high-power microwave irradiation stress is applied in the target switching state, and determine the online degradation test result of the power device according to the initial electrical parameters and the test electrical parameters.

2. The system according to claim 1, wherein The high-power microwave irradiation device includes: A resonant cavity, and the power device is arranged in the resonant cavity; A high-power microwave radiation source for providing high-power microwave signals; An excitation probe arranged in the resonant cavity and connected to the high-power microwave radiation source, for generating the high-power microwave irradiation stress in the resonant cavity according to the high-power microwave signal.

3. The system according to claim 2, wherein The high-power microwave radiation source includes a microwave signal source, a power amplifier, a circulator, and a directional coupler; wherein, The microwave signal source is used to provide microwave signals; The power amplifier is connected to the microwave signal source, and the power amplifier is used to perform power amplification processing on the microwave signal and output high-power microwave signals; The circulator is respectively connected to the power amplifier and the directional coupler, and the circulator is used to transmit the high-power microwave signal from the power amplifier to the directional coupler; The directional coupler is connected to the excitation probe, and the directional coupler is used to transmit the high-power microwave signal from the circulator to the excitation probe.

4. The system according to claim 3, wherein The system further includes a power meter; the directional coupler includes a first directional coupler and a second directional coupler; wherein, The input end of the first directional coupler is connected to the circulator, the through output end of the first directional coupler is connected to the input end of the second directional coupler, and the coupled output end of the first directional coupler is connected to the first end of the power meter; The DC output end of the second directional coupler is connected to the excitation probe, and the coupled output end of the second directional coupler is connected to the second end of the power meter; The power meter is used to detect the first power coupled and output by the first directional coupler and the second power coupled and output by the second directional coupler.

5. The system according to any one of claims 1-4, characterized in that, The system further includes a device fixture, and the device fixture includes: A fixture body for carrying the power device, and one side of the fixture body close to the power device is arranged in the high-power microwave irradiation device; Signal terminals located on the side of the fixture body away from the power device and arranged outside the high-power microwave irradiation device, for being respectively connected to the power device, the switching state loading device, and the semiconductor parameter analyzer.

6. The system according to any one of claims 1-4, characterized in that The switching state loading device includes: A gate drive circuit, connected to the gate of the power device, for providing a gate drive signal; A power circuit, respectively connected to the first pole and the second pole of the power device, for controlling the power device to operate in the target switching state when the gate drive signal drives the power device; A control circuit, respectively connected to the gate drive circuit and the power circuit, for respectively controlling the operating states of the gate drive circuit and the power circuit, so that the power device operates in the target switching state.

7. The system according to claim 6, wherein The power circuit includes a gating module, a first charge and discharge module, a second charge and discharge module, and a DC power supply; wherein, a first end of the gating module is connected to the second pole of the power device, a second end of the gating module is respectively connected to a first end of the first charge and discharge module and a first end of the DC power supply, another second end of the gating module is respectively connected to a second end of the first charge and discharge module and a first end of the second charge and discharge module, and a control end of the gating module is connected to the control circuit; a second end of the second charge and discharge module is respectively connected to the second pole of the power device and a second end of the DC power supply; wherein, When the gating module conducts the first end of the first charge and discharge module and the DC power supply respectively to the second pole of the power device, the power device operates in the hard switching state; When the gating module conducts the second end of the first charge and discharge module and the first end of the second charge and discharge module respectively to the second pole of the power device, the power device operates in the soft switching state.

8. The system according to claim 7, wherein Both the first charge and discharge module and the second charge and discharge module include a capacitor and a resistor connected in parallel.

9. An on-line test method for power device degradation, characterized in that, The method includes: Obtaining the initial electrical parameters of the power device; Applying a high-power microwave irradiation stress to the power device and controlling the power device to operate in a target switching state; the target switching state includes a soft switching state or a hard switching state; Obtaining the test electrical parameters of the power device when the high-power microwave irradiation stress is applied in the target switching state; Determining the degradation on-line test result of the power device according to the initial electrical parameters and the test electrical parameters.

10. The method according to claim 9, characterized in that The applying a high-power microwave irradiation stress to the power device and controlling the power device to operate in a target switching state includes: Obtaining the test condition parameters of the power device; the test condition parameters include high-power microwave irradiation condition parameters and target switching state parameters; the high-power microwave irradiation condition parameters include irradiation power and irradiation time; Applying a high-power microwave irradiation stress to the power device according to the irradiation power and controlling the power device to operate in the target switching state according to the target switching state parameters; After the high-power microwave irradiation stress is applied to the power device for the irradiation time when the power device operates in the target switching state, stopping applying the high-power microwave irradiation stress and controlling the power device to stop operating.

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