Power device degradation on-line testing system and method

Abstract

The application relates to a power device degradation online testing system and method, and relates to the technical field of testing.The power device degradation online testing system comprises a high-power microwave irradiation device, a switch state loading device and a semiconductor parameter analyzer; the high-power microwave irradiation device is used for providing high-power microwave irradiation stress to a power device; the switch state loading device is used for controlling the power device to work in a target switch state; the target switch state comprises a soft switch state or a hard switch state; the semiconductor parameter analyzer is used for acquiring initial electrical parameters of the power device, acquiring test electrical parameters of the power device under the target switch state and the high-power microwave irradiation stress, and determining a degradation online testing result of the power device according to the initial electrical parameters and the test electrical parameters.The application can online monitor the electrical parameter degradation characteristics of the power device under the high-power microwave irradiation stress in the soft switch state and the hard switch state respectively.

Description

Technical Field

[0001] This application relates to the field of testing technology, and in particular to an online testing system and method for power device degradation. Background Technology

[0002] With the rapid development of drone technology, it has been widely used not only in civilian fields such as disaster relief, power line inspection, surveying and mapping and agricultural plant protection, but also plays an increasingly significant role in the military field.

[0003] High-power microwaves (HPMs) can typically interfere with or damage the electronic systems of drones through high-power electromagnetic pulses. This induces high voltage and high current in the drone's electronic systems, leading to degradation or even failure of internal power devices, resulting in signal distortion, equipment malfunction, or functional disorder. Therefore, accurately testing and evaluating the degradation characteristics of power devices under high-power microwave irradiation is a pressing issue that needs to be addressed. Summary of the Invention

[0004] Therefore, it is necessary to provide an online testing system and method for power device degradation, which enables the testing and evaluation of the electrical parameter degradation characteristics of power devices under high-power microwave irradiation stress in both soft-switching and hard-switching states.

[0005] This application provides an online degradation testing system for power devices, comprising: a high-power microwave irradiation device, a switching state loading device, and a semiconductor parameter analyzer; the power device is disposed within the high-power microwave irradiation device and connected to both the switching state loading device and the semiconductor parameter analyzer; wherein...

[0006] The high-power microwave irradiation device is used to provide high-power microwave irradiation stress to the power device;

[0007] The switching state loading device is used to control the power device to operate in a target switching state; the target switching state includes a soft switching state or a hard switching state.

[0008] The semiconductor parameter analyzer is used to acquire the initial electrical parameters of the power device, acquire the test electrical parameters of the power device under the target switching state when the high-power microwave irradiation stress is applied, and determine the degradation online test results of the power device based on the initial electrical parameters and the test electrical parameters.

[0009] In one embodiment, the high-power microwave irradiation device includes:

[0010] A resonant cavity, wherein the power device is disposed within the resonant cavity;

[0011] High-power microwave radiation source, used to provide high-power microwave signals;

[0012] An excitation probe is disposed within the resonant cavity and connected to the high-power microwave radiation source, used to generate the high-power microwave irradiation stress within the resonant cavity based on the high-power microwave signal.

[0013] In one embodiment, the high-power microwave radiation source includes a microwave signal source, a power amplifier, a circulator, and a directional coupler; wherein,

[0014] The microwave signal source is used to provide microwave signals;

[0015] The power amplifier is connected to the microwave signal source, and the power amplifier is used to amplify the power of the microwave signal and output a high-power microwave signal.

[0016] The circulator is connected to the power amplifier and the directional coupler respectively, and the circulator is used to transmit the high-power microwave signal from the power amplifier to the directional coupler;

[0017] The directional coupler is connected to the excitation probe and is used to transmit high-power microwave signals from the circulator to the excitation probe.

[0018] In one embodiment, the system further includes a power meter; the directional coupler includes a first directional coupler and a second directional coupler; wherein,

[0019] The input terminal of the first directional coupler is connected to the circulator, the through output terminal of the first directional coupler is connected to the input terminal of the second directional coupler, and the coupling output terminal of the first directional coupler is connected to the first terminal of the power meter.

[0020] The DC output terminal of the second directional coupler is connected to the excitation probe, and the coupling output terminal of the second directional coupler is connected to the second terminal of the power meter;

[0021] The power meter is used to detect the first power output of the first directional coupler and the second power output of the second directional coupler.

[0022] In one embodiment, the system further includes a device fixture, the device fixture comprising:

[0023] A clamp body for supporting the power device, wherein the clamp body is disposed within the high-power microwave irradiation device on the side closest to the power device;

[0024] The signal terminal is located on the side of the clamp body away from the power device and is disposed outside the high-power microwave irradiation device, for connecting to the power device, the switch state loading device and the semiconductor parameter analyzer respectively.

[0025] In one embodiment, the switch state loading device includes:

[0026] A gate drive circuit, connected to the gate of the power device, is used to provide a gate drive signal;

[0027] A power circuit, connected to the first and second terminals of the power device respectively, is used to control the power device to operate in the target switching state when the gate drive signal drives the power device.

[0028] A control circuit, connected to the gate drive circuit and the power circuit respectively, is used to control the operating states of the gate drive circuit and the power circuit respectively, so that the power device operates in the target switching state.

[0029] In one embodiment, the power circuit includes a gating module, a first charging / discharging module, a second charging / discharging module, and a DC power supply; wherein, a first terminal of the gating module is connected to the second terminal of the power device, a second terminal of the gating module is connected to the first terminal of the first charging / discharging module and the first terminal of the DC power supply, a second terminal of the gating module is connected to the second terminal of the first charging / discharging module and the first terminal of the second charging / discharging module, and a control terminal of the gating module is connected to the control circuit; the second terminal of the second charging / discharging module is connected to the second terminal of the power device and the second terminal of the DC power supply.

[0030] When the selection module connects the first terminal of the first charging and discharging module and the DC power supply to the second terminal of the power device, the power device operates in the hard switching state.

[0031] When the gating module connects the second terminal of the first charging / discharging module and the first terminal of the second charging / discharging module to the second pole of the power device, the power device operates in the soft-switching state.

[0032] In one embodiment, both the first charge / discharge module and the second charge / discharge module include a capacitor and a resistor connected in parallel.

[0033] This application provides an online degradation testing method for power devices, the method comprising:

[0034] Obtain the initial electrical parameters of the power device;

[0035] High-power microwave irradiation stress is applied to the power device, and the power device is controlled to operate in a target switching state; the target switching state includes a soft switching state or a hard switching state.

[0036] The test electrical parameters of the power device under the target switching state when the high-power microwave irradiation stress is applied are obtained;

[0037] The degradation online test results of the power device are determined based on the initial electrical parameters and the test electrical parameters.

[0038] In one embodiment, applying high-power microwave irradiation stress to the power device and controlling the power device to operate in a target switching state includes:

[0039] Obtain the test condition parameters for the power device; the test condition parameters include high-power microwave irradiation condition parameters and target switching state parameters; the high-power microwave irradiation condition parameters include irradiation power and irradiation time;

[0040] Apply high-power microwave irradiation stress to the power device according to the irradiation power, and control the power device to operate in the target switching state according to the target switching state parameters;

[0041] After the power device is operating in the target switching state and the high-power microwave irradiation stress is applied for a certain period of time, the application of the high-power microwave irradiation stress is stopped, and the power device is controlled to stop operating.

[0042] The aforementioned online degradation testing system and method for power devices includes a high-power microwave irradiation device, a switching state loading device, and a semiconductor parameter analyzer. The power device is housed within the high-power microwave irradiation device and connected to both the switching state loading device and the semiconductor parameter analyzer. The high-power microwave irradiation device applies high-power microwave irradiation stress to the power device, and the switching state loading device controls the power device to operate in a target switching state, which may be a soft-switching state or a hard-switching state. The semiconductor parameter analyzer acquires the initial electrical parameters of the power device and the test electrical parameters of the power device under the applied high-power microwave irradiation stress in the target switching state. Based on the initial and test electrical parameters, the online degradation test results of the power device are determined. This system enables online degradation testing of power devices under both soft-switching and hard-switching states after applying high-power microwave irradiation stress. It can accurately assess the degradation characteristics of the power device's electrical parameters, thus providing strong technical support and data support for reliability research and protection design of power devices under high-power microwave irradiation environments, and has broad application prospects. Attached Figure Description

[0043] To more clearly illustrate the technical solutions in the embodiments of this application or the conventional technology, the drawings used in the description of the embodiments or the conventional technology will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0044] Figure 1 This is a schematic diagram of the structure of an online power device degradation testing system according to one embodiment;

[0045] Figure 2 This is a schematic diagram of the structure of an online power device degradation testing system according to another embodiment;

[0046] Figure 3 This is a schematic diagram of the structure of an online power device degradation testing system according to yet another embodiment;

[0047] Figure 4 This is a schematic diagram of the device fixture and power device according to one embodiment;

[0048] Figure 5 This is a flowchart illustrating an embodiment of an online degradation testing method for power devices;

[0049] Figure 6 This is a flowchart illustrating an online power device degradation testing method according to another embodiment;

[0050] Figure 7 This is a flowchart illustrating an online degradation testing method for power devices according to yet another embodiment.

[0051] Explanation of reference numerals in the attached figures:

[0052] 10. High-power microwave irradiation device; 11. Resonant cavity; 12. High-power microwave radiation source; 121. Microwave signal source; 122. Power amplifier; 123. Circulator; 124. Directional coupler; 1241. First directional coupler; 1242. Second directional coupler; 13. Excitation probe; 20. Switching state loading device; 21. Gate drive circuit; 22. Power circuit; 221. Gating module; 222. First charge / discharge module; 223. Second charge / discharge module; 23. Control circuit; 30. Semiconductor parameter analyzer; 40. Power device; 50. Power meter; 60. Device fixture; 61. Fixture body; 611. First fixture body; 612. Second fixture body; 62. Signal terminal. Detailed Implementation

[0053] To facilitate understanding of this application, a more complete description will be provided below with reference to the accompanying drawings, which illustrate embodiments of the present application. However, the present application can be implemented in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided so that the disclosure of this application will be thorough and complete.

[0054] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the application.

[0055] It is understood that the terms "first," "second," etc., used herein may be used to describe various elements, but these elements are not limited by these terms. These terms are only used to distinguish one element from another. For example, without departing from the scope of this application, a first resistor may be referred to as a second resistor, and similarly, a second resistor may be referred to as a first resistor. Both the first resistor and the second resistor are resistors, but they are not the same resistor.

[0056] It is understood that the term "connection" in the following embodiments should be understood as "electrical connection," "communication connection," etc., if the connected circuits, modules, units, etc., have electrical signal or data transmission with each other.

[0057] It is understandable that "at least one" refers to one or more, and "multiple" refers to two or more. "At least a part of an element" refers to part or all of an element.

[0058] When used herein, the singular forms of “a,” “an,” and “the” may also include the plural forms unless the context clearly indicates otherwise. It should also be understood that the terms “comprising / including” or “having,” etc., specify the presence of the stated features, wholes, steps, operations, components, parts, or combinations thereof, but do not preclude the possibility of the presence or addition of one or more other features, wholes, steps, operations, components, parts, or combinations thereof. Meanwhile, the term “and / or” as used in this specification includes any and all combinations of the associated listed items.

[0059] As mentioned in the background section, power devices in drones, such as those in the power supply and electric drive modules, are susceptible to HPM (Electromagnetic Interference). These power devices primarily operate in switching mode or switching states. The switching state of a power device refers to its operational state, switching between an on and off state. Based on the characteristics of voltage and current changes during switching, these states can be categorized as soft-switching and hard-switching. Hard-switching power devices offer advantages such as high reliability and low cost, but disadvantages include high switching losses and susceptibility to electromagnetic interference. Soft-switching power devices reduce switching losses and electromagnetic interference, but increase cost and decrease system reliability.

[0060] Based on the above, this application provides an online degradation testing system and method for power devices, which can accurately evaluate the degree of degradation of power devices under high-power microwave irradiation in hard-switching and soft-switching states, respectively. That is, by simulating the operation of power devices in soft-switching and hard-switching states, the parameter degradation characteristics of power devices under different operating conditions can be accurately measured, thereby revealing the performance evolution law of power devices in high-power microwave environments. This provides important data support and theoretical basis for the high-power microwave protection design of power modules and electric drive modules of UAVs, and helps to improve the reliability and safety of UAVs in complex electromagnetic environments.

[0061] In one embodiment, such as Figure 1 As shown, an online testing system for power device degradation is provided, including: a high-power microwave irradiation device 10, a switching state loading device 20, and a semiconductor parameter analyzer 30.

[0062] Power device 40 is a semiconductor device used for processing and controlling electrical energy conversion and transmission. In the embodiments of this application, power device 40 is a power device 40 undergoing degradation testing, which can be referred to as DUT. For example, power device 40 can be a power device 40 applied in a drone (such as a motor module and / or electric drive module). Power device 40 can include any one of silicon (Si) devices, silicon carbide (SiC) devices, and gallium nitride (GaN) devices. Power device 40 can also include at least one of insulated gate bipolar transistor (IGBT), metal oxide field-effect transistor (MOSFET), and thyristor. In applications, the power device 40 for degradation testing can be selected according to actual testing requirements, and no further limitations are imposed here.

[0063] A power device 40 is disposed within a high-power microwave irradiation device 10. The high-power microwave irradiation device 10 is used to provide high-power microwave irradiation stress to the power device 40. During testing, the power device 40 can be disposed within the high-power microwave irradiation device 10 to apply high-power microwave irradiation stress to the power device 40 within the high-power microwave irradiation device 10, thereby achieving degradation testing under high-power microwave irradiation stress.

[0064] Power device 40 is connected to switching state loading device 20 and semiconductor parameter analyzer 30, respectively. Power device 40 includes a gate, a first electrode, and a second electrode. For example, if power device 40 is a gallium nitride (GaN) device, then the GaN device includes a gate, a source, and a drain. Alternatively, if power device 40 is an insulated-gate bipolar transistor (IGBT), then the IGBT includes a gate, a collector, and an emitter. In application, the corresponding electrodes can be determined according to the type of power device 40, and no further limitations are made here. The gate, first electrode, and second electrode of power device 40 are connected to switching state loading device 20. The gate, first electrode, and second electrode of power device 40 are connected to semiconductor parameter analyzer 30.

[0065] The switching state loading device 20 is used to control the power device 40 to operate in a target switching state. The target switching state includes a soft-switching state or a hard-switching state. Soft switching refers to a specific design that minimizes or eliminates voltage and current overlap during the switching process of the power device 40, thereby reducing switching losses. Soft switching can be achieved through zero-voltage switching and zero-current switching. Zero-voltage switching ensures that the voltage has dropped to zero before the switch is turned on, so that there is no voltage and current overlap when the switch is turned on, reducing conduction losses. Zero-current switching ensures that the current has dropped to zero before the switch is turned off, so that there is no voltage and current overlap when the switch is turned off, reducing turn-off losses. Hard switching refers to a situation where the voltage and current of the power device 40 simultaneously have large values ​​during the switching process; that is, at the instant of switching, the voltage is either zero or at its maximum value, and the current is either zero or at its maximum value.

[0066] The semiconductor parameter analyzer 30 is used to acquire the initial electrical parameters of the power device 40, and the test electrical parameters of the power device 40 under high-power microwave irradiation stress applied in the target switching state. It also determines the online degradation test results of the power device 40 based on the initial and test electrical parameters. The online degradation test results represent the degradation characteristics of the power device 40 under high-power microwave irradiation stress applied in the target switching state. The initial electrical parameters refer to the electrical parameters obtained by testing the power device 40 before it is subjected to high-power microwave irradiation stress. The test electrical parameters refer to the electrical parameters obtained by testing the power device 40 under high-power irradiation stress applied in the target switching state (soft switching state or hard switching state). The test electrical parameters may include those obtained during the process of applying high-power microwave irradiation stress to the power device 40 under the target switching state, or those obtained after the power device 40 is subjected to high-power microwave irradiation stress under the target switching state; this is not limited here.

[0067] For example, the semiconductor parameter analyzer 30 may include at least one of a dynamic parameter testing device and a static parameter testing device. The dynamic parameter testing device can be used to test the dynamic parameters of the power device 40, such as the turn-off time and on-resistance of the power device 40. The dynamic parameter testing device may include an oscilloscope, which can test the voltage and current of the power device 40 online in real time. The static parameter testing device can be used to test the static parameters of the power device 40, such as the transfer characteristics, output characteristics, and leakage characteristics of the power device 40.

[0068] In this embodiment, electrical parameters, including initial electrical parameters and test electrical parameters, are key indicators describing the electrical performance of the power device 40. Electrical parameters may include at least one of transfer characteristics, output characteristics, and leakage characteristics. Transfer characteristics describe the relationship between input voltage and output current. Output characteristics reflect the voltage-current relationship of the power device 40 under different operating conditions. Leakage characteristics refer to the small current flowing through the power device 40 in the off state, i.e., when no signal is actively applied to turn it on. In applications, electrical parameters are not limited to the types described above; they can also be other indicators that can assess the degree of device degradation. For example, electrical parameters may also include threshold voltage, breakdown voltage, on-resistance, and switching speed, etc., which are not further limited here.

[0069] The power device degradation online testing system provided in the above embodiments includes a high-power microwave irradiation device 10, a switching state loading device 20, and a semiconductor parameter analyzer 30. A power device 40 is disposed within the high-power microwave irradiation device 10 and connected to both the switching state loading device 20 and the semiconductor parameter analyzer 30. The high-power microwave irradiation device 10 provides high-power microwave irradiation stress to the power device 40, and the switching state loading device 20 controls the power device 40 to operate in a target switching state, which may include a soft switching state or a hard switching state. The semiconductor parameter analyzer 30 acquires the initial electrical parameters of the power device 40 and the test electrical parameters of the power device 40 under the target switching state with applied high-power microwave irradiation stress. Finally, the system determines the online degradation test results of the power device 40 based on the initial electrical parameters and the test electrical parameters. This system enables degradation testing of power device 40 under high-power microwave irradiation stress in both soft-switching and hard-switching states. It can accurately assess the degradation characteristics of the electrical parameters of power device 40, thus providing strong technical support and data support for reliability research and protection design of power device 40 under high-power microwave irradiation environment, and has broad application prospects.

[0070] The online degradation testing system for power devices provided in this application embodiment can precisely control relevant parameters of high-power microwave irradiation stress, such as irradiation power and irradiation time, through the high-power microwave irradiation device 10, thereby ensuring the stability and repeatability of test conditions. Furthermore, the system can flexibly switch the power device 40 between soft-switching and hard-switching states via the switching state loading device 20, providing a reliable testing platform for studying the degradation characteristics of power devices under different operating conditions.

[0071] Furthermore, the online degradation testing system for power devices provided in this application embodiment can accurately and in real time measure the electrical parameters of the power device 40, including key indicators such as transfer characteristics, output characteristics, and leakage current, using a semiconductor parameter analyzer 30. Through online monitoring, the system can capture the transient changes of the power device 40 under high-power microwave irradiation and the parameter degradation patterns under soft and hard switching stress, thereby ensuring the accuracy and completeness of the data. It should be noted that both online and offline monitoring of the electrical parameters of the power device 40 can be performed. Online monitoring can be understood as obtaining the online degradation test results of the power device 40 in real time based on initial and test electrical parameters; offline monitoring can be understood as obtaining the degradation test results of the power device 40 based on initial and test electrical parameters when required. Online monitoring offers higher real-time performance than offline monitoring. In applications, online and / or offline monitoring can be selected according to actual needs, without further limitations.

[0072] Furthermore, the online power device degradation testing system provided in this application embodiment can simultaneously apply high-power microwave irradiation stress while realizing the switching of device switching states, thereby achieving precise control of multiple experimental parameters such as irradiation power, irradiation time, and switching state. This multi-parameter coordinated control capability provides strong support for in-depth research on the performance evolution of power device 40 under complex electromagnetic environments.

[0073] In addition, the online power device degradation testing system provided in this application embodiment is compatible with various types of power devices 40, including silicon devices, silicon carbide devices and gallium nitride devices. These materials can be widely used in high power, high frequency and high temperature scenarios. The system's compatibility enables it to meet the testing requirements of different devices and has wide applicability.

[0074] Furthermore, the online power device degradation testing system provided in this application can provide experimental data support for high-power microwave protection design of products such as power modules and electric drive modules in drones, helping to improve the reliability and safety of products such as drones in complex electromagnetic environments. Moreover, this system is also suitable for product development units, product application units, and third-party evaluation agencies, and has broad application prospects and market potential.

[0075] In one embodiment, such as Figure 2 As shown, the high-power microwave irradiation device 10 includes a resonant cavity 11, a high-power microwave radiation source 12, and an excitation probe 13. The high-power microwave radiation source 12 is used to provide a high-power microwave signal. The power and frequency of the high-power microwave signal can be set according to the testing requirements.

[0076] A resonant cavity 11 is a structure capable of storing electromagnetic wave energy at a specific frequency. The design of the resonant cavity 11 can be achieved by precisely controlling its size and shape to determine its resonant frequency. For example, the resonant cavity 11 is a cavity formed by enclosing multiple irregular surfaces; for instance, it can be a cavity formed by removing a wedge-shaped structure from one side of a cuboid. For example, the frequency of the high-power microwave signal is 2.45 GHz. In other examples, the frequency of the high-power microwave signal can also be other values, such as 2.35 GHz, 2.4 GHz, 2.5 GHz, 2.55 GHz, etc., without further limitation. A power device 40 is disposed within the resonant cavity 11. The position of the power device 40 can be appropriately set according to the location of the high-power microwave irradiation stress generated by the resonant cavity 11, without limitation.

[0077] An excitation probe 13 is disposed within the resonant cavity 11. The excitation probe 13 and the power device 40 are spaced apart within the resonant cavity 11. The excitation probe 13 is connected to a high-power microwave radiation source 12. The excitation probe 13 is used to generate resonance within the resonant cavity 11 based on the high-power microwave signal, and to provide high-power microwave irradiation stress to the power device 40. In application, the high-power microwave signal generated by the high-power microwave radiation source 12 is transmitted to the excitation probe 13, and an electromagnetic field is generated within the resonant cavity 11 through resonance. This electromagnetic field is used to simulate high-power microwave irradiation stress.

[0078] In the online power device degradation testing system provided in the above embodiments, the high-power microwave irradiation device 10 includes a resonant cavity 11, a high-power microwave radiation source 12, and an excitation probe 13. By placing the power device 40 and the excitation probe 13 respectively in the resonant cavity 11, and providing a high-power microwave signal through the high-power microwave radiation source 12, and generating resonance in the resonant cavity 11 according to the high-power microwave signal through the excitation probe 13, high-power microwave irradiation stress is provided to the power device 40. In this way, the resonant cavity 11, the high-power microwave radiation source 12, and the excitation probe 13 are combined to achieve precise control of the high-power microwave irradiation stress, including but not limited to parameters such as irradiation power and irradiation time, ensuring the stability and repeatability of the test conditions. This provides a test platform for the degradation testing of the power device 40 under different application scenarios, and provides technical support and data support for in-depth research on the performance evolution of the power device 40 in complex electromagnetic environments, thereby improving the reliability of the test system.

[0079] like Figure 3 As shown, in one embodiment, the high-power microwave radiation source 12 includes a microwave signal source 121, a power amplifier 122, a circulator 123, and a directional coupler 124.

[0080] The microwave signal source 121 is used to provide microwave signals. For example, the microwave signal source 121 can be used to provide microwave signals with adjustable power and / or adjustable frequency. In applications, the microwave signals generated by the microwave signal source 121 can be controlled to meet different types of power devices 40 and different high-power microwave irradiation testing requirements. This allows for precise control over different types of power devices 40 and their testing conditions, improving the system's controllability and flexibility.

[0081] Power amplifier 122 is connected to microwave signal source 121. Specifically, the input terminal of power amplifier 122 is connected to microwave signal source 121. Power amplifier 122 amplifies the microwave signal from microwave signal source 121 and outputs a high-power microwave signal. Power amplifier 122 is designed to amplify the microwave signal to achieve the high power level required for testing. This reduces the power requirement of the microwave signal; even with lower microwave signal power, a high-power microwave irradiation testing environment can be provided, improving system flexibility and ensuring efficient energy utilization during testing.

[0082] Circulator 123 is connected to power amplifier 122 and directional coupler 124. The input of circulator 123 is connected to the output of power amplifier 122, and the output of circulator 123 is connected to the input of directional coupler 124. Circulator 123 is used to transmit the high-power microwave signal from power amplifier 122 to directional coupler 124. Circulator 123 can unidirectionally transmit the high-power microwave signal from power amplifier 122 to directional coupler 124, while providing necessary isolation protection to prevent reverse signals from damaging sensitive components (such as microwave signal source 121). In this way, unnecessary interference and loss can be effectively avoided, ensuring optimal performance of the signal transmission path.

[0083] The directional coupler 124 is connected to the excitation probe 13. Specifically, the DC output terminal of the directional coupler 124 is connected to the excitation probe 13. The directional coupler 124 is used to transmit the high-power microwave signal from the circulator 123 to the excitation probe 13. The directional coupler 124 facilitates real-time monitoring and adjustment of the test process, providing stable and controllable irradiation stress to the power device 40, thereby improving the reliability and stability of the test results.

[0084] In the online power device degradation testing system provided in the above embodiments, the high-power microwave radiation source 12 includes a microwave signal source 121, a power amplifier 122, a circulator 123, and a directional coupler 124. The system provides a microwave signal through the microwave signal source 121, amplifies the microwave signal from the microwave signal source 121 through the power amplifier 122, and outputs a high-power microwave signal. The high-power microwave signal from the power amplifier 122 is transmitted to the directional coupler 124 through the circulator 123, and the high-power microwave signal from the circulator 123 is transmitted to the excitation probe 13 through the directional coupler 124. This provides a high-power microwave signal to provide high-power microwave irradiation stress to the power device 40. Thus, efficient and accurate testing of the power device 40 under high-power microwave irradiation conditions is achieved, which also helps to improve the technical level of the entire testing platform and provides strong support for evaluating and improving the long-term reliability of the power device 40.

[0085] Please continue reading. Figure 3 In one embodiment, the power device degradation online testing system further includes a power meter 50. The directional coupler 124 includes a first directional coupler 1241 and a second directional coupler 1242.

[0086] The input terminal of the first directional coupler 1241 is connected to the circulator 123. The input terminal of the first directional coupler 1241 can receive high-power microwave signals from the circulator 123. The direct-through output terminal of the first directional coupler 1241 is connected to the input terminal of the second directional coupler 1242. The direct-through output terminal of the first directional coupler 1241 can transmit the high-power microwave signals from the circulator 123 to the second directional coupler 1242. The coupling output terminal of the first directional coupler 1241 is connected to the first terminal CH1 of the power meter 50. The first directional coupler 1241 can couple the high-power microwave signals from the circulator 123 and output a first power through the coupling output terminal.

[0087] The input terminal of the second directional coupler 1242 can receive high-power microwave signals from the first directional coupler 1241. The DC output terminal of the second directional coupler 1242 is connected to the excitation probe 13. The direct-through output terminal of the second directional coupler 1242 can transmit the high-power microwave signal from the first directional coupler 1241 to the excitation probe 13. The coupling output terminal of the second directional coupler 1242 is connected to the second terminal CH2 of the power meter 50. The second directional coupler 1242 can couple the high-power microwave signal from the first directional coupler 1241 and output a second power through the coupling output terminal.

[0088] The power meter 50 is used to detect the first power output of the first directional coupler 1241 and the second power output of the second directional coupler 1242. The first power output of the first directional coupler 1241 can be understood as the input power, and the second power output of the second directional coupler 1242 can be understood as the reflected power.

[0089] In applications, the power difference between the first power and the second power can be calculated, and the determination of whether the high-power microwave irradiation device 10 provides stable high-power microwave irradiation stress can be based on this power difference. For example, if the absolute value of the power difference between the first power and the second power is greater than or equal to 20 dBm, it is determined that the high-power microwave irradiation device 10 provides stable high-power microwave irradiation stress. Thus, the input power and reflected power of the high-power microwave signal source 121 can be detected in real time by the power meter 50, enabling real-time detection of high-power microwave irradiation stress and ensuring that stable high-power microwave irradiation stress is provided to the power device 40.

[0090] like Figure 4As shown, in one embodiment, the power device degradation online testing system further includes a device fixture 60. The device fixture 60 includes a fixture body 61 and signal terminals 62. The fixture body 61 is used to support the power device 40. The power device 40 can be disposed on one side of the fixture body 61. In this way, the power device 40 can be placed in the high-power microwave irradiation device 10 by means of the fixture body 61 of the device fixture 60, so as to apply high-power microwave irradiation stress to the power device 40.

[0091] Signal terminal 62 is located on the side of the fixture body 61 away from the power device 40. Signal terminal 62 is disposed outside the high-power microwave irradiation device 10. Signal terminal 62 is used to connect to the power device 40, the switching state loading device 20, and the semiconductor parameter analyzer 30, respectively. Thus, the signal terminal 62 of the device fixture 60 enables the connection between the power device 40 and the switching state loading device 20 and the semiconductor parameter analyzer 30, respectively, reducing the difficulty of connecting devices and providing technical support for testing the degradation characteristics of the power device 40 under high-power microwave irradiation stress in soft-switching and hard-switching states.

[0092] For example, signal terminals 62 include at least three signal terminals 62. For instance, device fixture 60 includes three signal terminals 62: a gate signal terminal G, a source signal terminal S, and a drain signal terminal D. Taking a gallium nitride (GaN) device as an example, the gate signal terminal S is connected to the gate of the GaN device, the source signal terminal S is connected to the source of the GaN device, and the drain signal terminal D is connected to the drain of the GaN device. Furthermore, the three signal terminals 62 are respectively connected to the switch state loading device 20 and the semiconductor parameter analyzer 30. Alternatively, the number of signal terminals 62 can also be four or more, depending on the testing requirements, and is not limited here.

[0093] The clamp body 61 is disposed within the high-power microwave irradiation device 10 on the side near the power device 40. The side of the clamp body 61 near the signal terminal 62 is disposed outside the high-power microwave irradiation device 10. Exemplarily, the clamp body 61 includes a first clamp body 611 and a second clamp body 612 located on one side of the first clamp body 611. The side of the second clamp body 612 away from the first clamp body 611 is used to support the power device 40, and the second clamp body 612 can be disposed within the high-power microwave irradiation device 10. The side of the first clamp body 611 away from the second clamp body 612 has the signal terminal 62, and the second clamp body 612 can be disposed outside the high-power microwave irradiation device 10. Exemplarily, the projection of the second clamp body 612 in the direction from the first clamp body 611 to the power device 40 covers the first clamp body 611. Thus, by setting up the first clamp body 611 and the second clamp body 612, the signal terminal 62 can be placed outside the high-power microwave irradiation device 10 through the first clamp body 611, and the power device 40 can be placed inside the high-power microwave irradiation device 10 through the second clamp body 612, thereby providing support for testing and improving the reliability of the system.

[0094] Please continue reading. Figure 2 In one embodiment, the switch state loading device 20 includes a gate drive circuit 21, a power circuit 22, and a control circuit 23.

[0095] The gate drive circuit 21 is connected to the gate of the power device 40. The gate drive circuit 21 provides a gate drive signal. For example, the gate drive circuit 21 may include a signal source and an auxiliary power supply, wherein the auxiliary power supply is connected to the signal source and provides a supply voltage to the signal source, which in turn provides the gate drive signal under the influence of the supply voltage. The gate drive signal may include an enable level and an disable level; the power device 40 may turn on in response to the enable level and turn off in response to the disable level. For example, the gate drive signal may be a square wave signal. The specific type of the gate drive signal can be set according to the gate drive requirements of the power device 40, and is not limited further here. Thus, through the gate drive signal provided by the gate drive circuit 21, effective control of the on / off state of the power device 40 can be achieved. For example, parameters such as the switching frequency and duty cycle of the power device 40 can be controlled to achieve degradation testing of the power device 40 and meet various testing requirements.

[0096] Power circuit 22 is connected to the first and second terminals of power device 40, respectively. Power circuit 22 is used to control power device 40 to operate in a target switching state when the gate drive signal drives power device 40. Power circuit 22 can control power device 40 to operate in a soft-switching state or a hard-switching state when the gate drive signal drives power device 40. Power circuit 22 provides technical support for power device 40 to operate in soft-switching and hard-switching states.

[0097] Control circuit 23 is connected to gate drive circuit 21 and power circuit 22 respectively. Control circuit 23 is used to control the operating states of gate drive circuit 21 and power circuit 22 respectively, so that power device 40 operates in a target switching state. Specifically, control circuit 23 can control gate drive circuit 21 and power circuit 22 to operate in either a soft-switching or hard-switching state. Control circuit 23 can control the gate drive signal output by gate drive circuit 21 by controlling its operating state, thereby controlling the switching frequency and duty cycle of power device 40. Control circuit 23 can also control the operating state of power circuit 22 to support switching of power device 40 between soft-switching and hard-switching states. For example, control circuit 23 can be an FPGA (Field Programmable Gate Array) controller.

[0098] In the above embodiments, the switching state loading device 20 provides a gate drive signal through the gate drive circuit 21, and controls the power device 40 to operate in a soft-switching state or a hard-switching state through the power circuit 22 when the gate drive signal drives the power device 40. The control circuit 23 controls the operating states of the gate drive circuit 21 and the power circuit 22 respectively, so that the power device 40 operates in a soft-switching state or a hard-switching state. In this way, the power device 40 can be flexibly switched between soft-switching state and hard-switching state, providing technical support for studying the electrical parameter degradation characteristics of high-power microwave irradiation stress under different operating conditions.

[0099] Please continue reading. Figure 2 In one embodiment, the power circuit 22 includes a gating module 221, a first charge / discharge module 222, a second charge / discharge module 223, and a DC power supply Vin.

[0100] The first terminal of the selection module 221 is connected to the second terminal of the power device 40. One second terminal HS of the selection module 221 is connected to the first terminal of the first charge / discharge module 222 and the first terminal of the DC power supply Vin, respectively. The other second terminal SS of the selection module 221 is connected to the second terminal of the first charge / discharge module 222 and the first terminal of the second charge / discharge module 223, respectively. The control terminal of the selection module 221 is connected to the control circuit 23. The selection module 221 is used to select and enable the path between the two second terminals (HS and SS) of the selection module 221 and the first terminal of the selection module 221, i.e., the second terminal of the power device 40. For example, the selection module 221 includes a single-pole multi-throw switch. For instance, the selection module 221 includes a single-pole double-throw switch.

[0101] The second terminal of the second charge / discharge module 223 is connected to the second terminal of the power device 40 and the second terminal of the DC power supply Vin, respectively. The first charge / discharge module 222 and the second charge / discharge module 223 can be used to perform charge / discharge processes to simulate soft-switching stress and hard-switching stress for the power device 40. The DC power supply Vin can be a high-voltage DC power supply Vin, used to provide DC voltage. The specific value of this DC voltage can be set according to the driving requirements of the power device 40, and is not limited here.

[0102] When the selection module 221 connects the first terminal of the first charging / discharging module 222 and the DC power supply Vin to the second terminal of the power device 40, that is, it switches to the HS terminal, and the power device 40 operates in a hard-switching state; in this case, the first charging / discharging module 222 and the second charging / discharging module 223 are connected in series. When the selection module 221 connects the second terminal of the first charging / discharging module 222 and the first terminal of the second charging / discharging module 223 to the second terminal of the power device 40, that is, it switches to the SS terminal, and the power device 40 operates in a soft-switching state; in this case, the first charging / discharging module 222 and the second charging / discharging module 223 are connected in parallel.

[0103] In the above embodiment, the power circuit 22 includes a gating module 221, a first charging / discharging module 222, a second charging / discharging module 223, and a DC power supply Vin. The power circuit 22 provides a DC voltage through the DC power supply Vin, and selects the path between the two second terminals of the gating module 221 and the second pole of the power device 40 through the gating module 221. The first charging / discharging module 222 and the second charging / discharging module 223 perform charging and discharging processes respectively to simulate soft-switching stress and hard-switching stress for the power device 40. In this way, by controlling the on / off state of the gating module 221, the switching between the soft-switching state and the hard-switching state of the power device 40 can be realized, thereby enabling the evaluation of electrical parameter degradation after being subjected to high-power microwave irradiation stress in the soft-switching state and the hard-switching state respectively, which is highly flexible.

[0104] Please continue reading. Figure 2 In one embodiment, both the first charging / discharging module 222 and the second charging / discharging module 223 include a capacitor and a resistor connected in parallel. For example, the first charging / discharging module 222 includes a first capacitor Co1 and a first resistor Ro1; the second charging / discharging module 223 includes a second capacitor Co2 and a second resistor Ro2; wherein, the first terminal of the first capacitor Co1 is connected to the first terminal of the first resistor Ro1, a second terminal of the gating module 221, and the first terminal of the DC power supply Vin; the second terminal of the first capacitor Co1 is connected to the second terminal of the first resistor Ro1, the first terminal of the second capacitor Co2, the first terminal of the second resistor Ro2, and the other second terminal of the gating module 221; and the second terminal of the second capacitor Co2 is connected to the second terminal of the second resistor Ro2, the second terminal of the DC power supply Vin, and the first terminal of the power device 40.

[0105] Please continue reading. Figure 2 In one embodiment, the power circuit 22 further includes a third capacitor Cin and a third resistor R. L In this circuit, the first terminal of the third capacitor Cin is connected to the first terminal of the DC power supply Vin, and the second terminal of the third capacitor Cin is connected to the second terminal of the DC power supply Vin. The third capacitor Cin serves to stabilize the voltage, contributing to the stability and reliability of the power circuit 22. The third resistor R... L The first terminal is connected to the second terminal of the power device 40, and the third resistor R L The drop-in single is connected to the first terminal of the gating module 221. The third resistor R... L It serves to protect the circuit.

[0106] Based on the same concept, this application provides an online degradation testing method for power devices. This method can be applied to any of the online degradation testing systems for power devices provided in the foregoing embodiments. The solution provided by this method is similar to the implementation scheme described in the above system; therefore, the specific limitations in one or more online degradation testing method embodiments provided below can be found in the limitations of the online degradation testing system for power devices described above, and will not be repeated here.

[0107] Combination Figures 1 to 4 ,like Figure 5 As shown, an online degradation test method for power devices is provided, which includes the following steps S502 to S508.

[0108] S502: Obtain the initial electrical parameters of the power device.

[0109] In applications, the semiconductor parameter analyzer 30 can be connected to the power device 40, and the initial electrical parameters of the power device 40 can be obtained using the semiconductor parameter analyzer 30 before applying high-power microwave irradiation stress to the power device 40, while the power device 40 is in an off state. For a detailed introduction to the semiconductor parameter analyzer 30 and the initial electrical parameters, please refer to the relevant content above, which will not be repeated here.

[0110] S504: Apply high-power microwave irradiation stress to the power device and control the power device to operate in the target switching state; the target switching state includes soft switching state or hard switching state.

[0111] In applications, the high-power microwave irradiation device 10 can be used to apply high-power microwave irradiation stress to the power device 40, and the switching state loading device 20 can be used to control the power device 40 to operate in a soft-switching state or a hard-switching state. For a detailed description of the high-power microwave irradiation device 10 and the switching state loading device 20, please refer to the relevant content above, and it will not be repeated here.

[0112] S506: Obtain test electrical parameters of a power device subjected to high-power microwave irradiation stress in a target switching state.

[0113] In applications, a semiconductor parameter analyzer 30 can be used to obtain test electrical parameters of the power device 40 under high-power microwave irradiation stress applied in the target switching state.

[0114] S508: Determine the online degradation test results of the power device based on the initial electrical parameters and the test electrical parameters.

[0115] In applications, the semiconductor parameter analyzer 30 can be used to determine the online degradation test results of the power device 40 based on the initial electrical parameters and the test electrical parameters.

[0116] The aforementioned online degradation testing method for power devices obtains the initial electrical parameters of the power device 40, applies high-power microwave irradiation stress to the power device 40, and controls the power device 40 to operate in a target switching state, which includes a soft-switching state or a hard-switching state. The method then obtains the test electrical parameters of the power device 40 under the applied high-power microwave irradiation stress in the target switching state. Based on the initial electrical parameters and the test electrical parameters, the online degradation test results of the power device 40 are determined. This method enables online degradation testing of the power device 40 under both soft-switching and hard-switching states after applying high-power microwave irradiation stress. It can evaluate the degradation characteristics of the electrical parameters of the power device 40 in real time, accurately, and comprehensively, thus providing strong technical support and data support for reliability research and protection design of the power device 40 under high-power microwave irradiation environments, and has broad application prospects.

[0117] Combination Figures 1 to 4 ,like Figure 6 As shown, in one embodiment, step S504, applying high-power microwave irradiation stress to the power device and controlling the power device to operate in the target switching state, includes the following steps S602 to S606.

[0118] S602: Obtain the test condition parameters for power devices.

[0119] S604: Apply high-power microwave irradiation stress to the power device according to the irradiation power, and control the power device to operate in the target switching state according to the target switching state parameters.

[0120] S606: When a power device is operating in the target switching state and is subjected to high-power microwave irradiation stress for a certain period of time, the application of high-power microwave irradiation stress is stopped, and the power device is controlled to stop working.

[0121] The test condition parameters include high-power microwave irradiation condition parameters and target switching state parameters. The high-power microwave irradiation condition parameters represent the parameters related to applying high-power microwave irradiation stress to the power device 40. These parameters include irradiation power and irradiation time, where irradiation power refers to the power of the high-power microwave irradiation stress, and irradiation time refers to the duration of applying the high-power microwave irradiation stress to the power device 40. The target switching state parameters represent the parameters related to the power device 40 operating in the target switching state, and may include, for example, switching state type, switching frequency, duty cycle, etc.

[0122] In application, the irradiation power, irradiation time, and target switching state parameters for applying high-power microwave irradiation stress to the power device 40 can be obtained. Based on the irradiation power and irradiation time, the high-power microwave irradiation device 10 applies high-power microwave irradiation stress to the power device 40. Furthermore, based on the target switching state parameters, the switching state loading device 20 controls the power device 40 to operate in the target switching state. The irradiation power and irradiation time can be flexibly set according to experimental requirements and are not specified in detail here.

[0123] The online degradation testing method for power devices provided in the above embodiments obtains the test condition parameters for the power device 40, applies high-power microwave irradiation stress to the power device 40 according to the irradiation power, and controls the power device 40 to operate in the target switching state according to the target switching state parameters. After the high-power microwave irradiation stress applied to the power device 40 in the target switching state reaches the irradiation time, the application of high-power microwave irradiation stress is stopped, and the power device 40 is controlled to stop working. In this way, the test parameters, such as irradiation power, irradiation time, and soft and hard switching states, can be precisely controlled according to the test requirements. This enables accurate online testing and evaluation of the electrical parameter degradation characteristics of the power device 40 under different operating conditions when subjected to high-power microwave irradiation stress, thereby meeting various test requirements and providing sufficient data support.

[0124] Please continue reading. Figures 1 to 4 In one embodiment, an online degradation testing method for power devices is provided, which is then applied to an online degradation testing system for power devices.

[0125] The system includes a high-power microwave irradiation device 10, a semiconductor parameter analyzer 30, a high-voltage DC power supply Vin, an auxiliary power supply, an FPGA microcontroller, a switch state loading device 20, control signal cables, power supply cables, test cables, device fixtures 60, test sockets, and a power meter 50.

[0126] The high-power microwave irradiation device 10 applies high-power microwave irradiation stress to the power device under test 40 through the device fixture 60. The power device under test 40 is connected to the switch-state loading device 20 through the test socket. The semiconductor parameter analyzer 30 is connected to the power device under test 40 through the test cable. The high-voltage DC power supply Vin and the auxiliary power supply are connected to the switch-state loading device 20 through the power supply cable. The FPGA microcontroller is connected to the switch-state loading device 20 through the control signal cable.

[0127] The high-power microwave irradiation device 10 includes a microwave signal generator, a solid-state power amplifier 122, a directional coupler 124, a circulator 123, a resonant cavity 11, an excitation probe 13, and a coaxial cable. The resonant cavity 11 applies high-power microwave irradiation stress to the power device under test 40 via a device clamp 60. The microwave signal generator, solid-state power amplifier 122, directional coupler 124, and circulator 123 are connected together via a coaxial cable. Their function is to amplify the microwave signal and inject it into the excitation probe 13, ultimately generating high-power microwave irradiation stress within the resonant cavity 11. The directional coupler 124 is connected to a power meter 50. For its specific structure and description, please refer to [link to relevant documentation]. Figure 2 and Figure 3 And related content mentioned above, which will not be repeated here.

[0128] The switching state loading device 20 includes a gate drive circuit 21, a control circuit 23, and a power circuit 22. Its specific structure can be found in [reference needed]. Figure 2 And related content mentioned above, which will not be repeated here.

[0129] like Figure 7 As shown, the online degradation test method for power devices includes the following steps S702 to S722.

[0130] S702: Obtain the test condition parameters for the power device, set the power and frequency of the microwave signal source, and connect the microwave signal source, solid-state power amplifier, directional coupler, circulator, resonant cavity, and excitation probe via coaxial cable. The frequency of the microwave signal source can be set to 2.45 GHz.

[0131] S704: Configure the FPGA controller according to the test condition parameters to set the switching frequency, duty cycle, and target operating state of the power device 40, and connect the FPGA controller to the corresponding signal port on the switching state loading device through the control cable. At the same time, connect the auxiliary power supply and the high-voltage DC power supply to the corresponding circuits respectively.

[0132] In applications, the switching frequency, duty cycle, and target operating state (soft switching or hard switching) of the power device 40 can be set by writing corresponding computer programs such as Verilog HDL programs, and then downloaded to the FPGA controller to realize the setting of the switching state of the power device 40.

[0133] S706: Set the semiconductor parameter analyzer according to the test conditions and parameters.

[0134] In applications, the required test curves can be programmed on the semiconductor parameter analyzer 30.

[0135] S708: Place the power device into the radiation cavity using the device fixture.

[0136] S710: Connect the pins of the power device to the switch state loading device and the semiconductor parameter analyzer respectively through the signal terminals on the device fixture.

[0137] S712: Turn on the semiconductor parameter analyzer to perform initial parameter testing on the power device and obtain the initial electrical parameters of the power device.

[0138] S714: Turn on the microwave signal source output button to apply high-power microwave irradiation stress to the power device.

[0139] S716: Turn on the auxiliary power supply, turn on the high voltage DC power supply Vin after the gate drive circuit is working normally, and after the power supply is stable, control the power device to work in soft switching state or hard switching state through FPGA control signal.

[0140] S718: After the power device has been operating for the preset irradiation time, the microwave signal source is turned off, the application of high-power microwave irradiation stress is stopped, and the high-voltage source and auxiliary power supply are turned off, and the power device stops working.

[0141] S720: Turn on the semiconductor parameter analyzer to perform parameter testing and obtain the test electrical parameters of the power device.

[0142] S722: Parameter testing completed, export experimental data. Experimental data includes online degradation test results of power devices.

[0143] The aforementioned online power device degradation testing system and method can test the parameter degradation characteristics of a power device 40 under high-power microwave irradiation in both soft-switching and hard-switching states. This system integrates a high-power microwave irradiation device 10, a switching state loading device 20, and a semiconductor parameter analyzer 30, enabling precise assessment of the parameter degradation of the power device 40 under high-power microwave irradiation in both soft-switching and hard-switching states. Furthermore, while applying high-power microwave irradiation stress to the power device 40, the system can simultaneously operate the device in either a soft-switching or hard-switching state, thus accurately simulating the actual operating conditions of the device. Through the semiconductor parameter analyzer 30, the system can acquire the degradation status of various electrical parameters of the device in real time, including but not limited to key indicators such as leakage current, threshold voltage drift, and transconductance changes. This integrated design not only improves testing efficiency but also ensures the accuracy and reliability of the test results. By simulating soft-switching and hard-switching states respectively, this method can accurately measure the parameter degradation characteristics of the device under different operating conditions, thereby revealing its performance evolution under high-power microwave environments. This testing method provides important data support and theoretical basis for the high-power microwave protection design of UAV power modules and electric drive modules, which helps to improve the reliability and safety of UAVs in complex electromagnetic environments.

[0144] It should be understood that although the steps in the flowcharts of the embodiments described above are shown sequentially according to the arrows, these steps are not necessarily executed in the order indicated by the arrows. Unless explicitly stated herein, there is no strict order restriction on the execution of these steps, and they can be executed in other orders. Moreover, at least some steps in the flowcharts of the embodiments described above may include multiple steps or multiple stages. These steps or stages are not necessarily completed at the same time, but can be executed at different times. The execution order of these steps or stages is not necessarily sequential, but can be performed alternately or in turn with other steps or at least some of the steps or stages of other steps.

[0145] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0146] The embodiments described above are merely illustrative of several implementation methods of this application, and while the descriptions are specific and detailed, they should not be construed as limiting the scope of this application. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this application, and these modifications and improvements all fall within the protection scope of this application. Therefore, the protection scope of this application should be determined by the appended claims.

Claims

1. A power device degradation on-line test system, characterized by, The system comprises: a high-power microwave irradiation device, a switch state loading device and a semiconductor parameter analyzer; a power device is connected with the switch state loading device and the semiconductor parameter analyzer respectively; wherein the high-power microwave irradiation device comprises: a resonant cavity, the power device is arranged in the resonant cavity; a high-power microwave radiation source for providing a high-power microwave signal; an excitation probe arranged in the resonant cavity and connected with the high-power microwave radiation source, for generating the high-power microwave irradiation stress in the resonant cavity according to the high-power microwave signal; the switch state loading device is used for controlling the power device to work in a target switch state; the target switch state comprises a soft switch state or a hard switch state; the soft switch is realized through zero-voltage switch or zero-current switch; the zero-voltage switch refers to that the voltage is zero before the switch is turned on; the zero-current switch refers to that the current is zero before the switch is turned off; the hard switch refers to that the voltage and the current are not zero during the switch conversion process of the power device; the semiconductor parameter analyzer is used for acquiring initial electrical parameters of the power device, acquiring test electrical parameters of the power device under the target switch state and the high-power microwave irradiation stress, and determining the degradation online test result of the power device according to the initial electrical parameters and the test electrical parameters.

2. The system of claim 1, wherein, the high-power microwave radiation source comprises a microwave signal source, a power amplifier, a circulator and a directional coupler; wherein the microwave signal source is used for providing a microwave signal; the power amplifier is connected with the microwave signal source, and the power amplifier is used for power amplification processing on the microwave signal and outputting a high-power microwave signal; the circulator is connected with the power amplifier and the directional coupler respectively, and the circulator is used for transmitting the high-power microwave signal from the power amplifier to the directional coupler; the directional coupler is connected with the excitation probe, and the directional coupler is used for transmitting the high-power microwave signal from the circulator to the excitation probe.

3. The system of claim 2, wherein, The system further comprises a power meter; the directional coupler comprises a first directional coupler and a second directional coupler; wherein an input end of the first directional coupler is connected with the circulator, a through output end of the first directional coupler is connected with an input end of the second directional coupler, and a coupling output end of the first directional coupler is connected with a first end of the power meter; a direct current output end of the second directional coupler is connected with the excitation probe, and a coupling output end of the second directional coupler is connected with a second end of the power meter; the power meter is used for detecting a first power coupled and output by the first directional coupler and a second power coupled and output by the second directional coupler.

4. The system according to any of claims 1-3, characterized in that, The system further comprises a device clamp, and the device clamp comprises: a clamp body for carrying the power device, the clamp body is arranged in the high-power microwave irradiation device close to one side of the power device; A signal terminal is arranged on the side of the clamp body away from the power device and outside the high-power microwave irradiation device, and is configured to be connected with the power device, the switch state loading device and the semiconductor parameter analyzer respectively.

5. The system according to any of claims 1-3, characterized in that, The switch state loading device comprises: a gate drive circuit connected with the gate of the power device and configured to provide a gate drive signal; a power circuit connected with the first pole and the second pole of the power device respectively and configured to control the power device to work in the target switch state when the gate drive signal drives the power device; a control circuit connected with the gate drive circuit and the power circuit respectively and configured to control the working states of the gate drive circuit and the power circuit respectively so that the power device works in the target switch state.

6. The system of claim 5, wherein, The power circuit comprises a gating module, a first charge-discharge module, a second charge-discharge module and a direct current power supply; wherein the first end of the gating module is connected with the second pole of the power device, the second end of the gating module is connected with the first end of the first charge-discharge module and the first end of the direct current power supply respectively, the other second end of the gating module is connected with the second end of the first charge-discharge module and the first end of the second charge-discharge module respectively, and the control end of the gating module is connected with the control circuit; the second end of the second charge-discharge module is connected with the second pole of the power device and the second end of the direct current power supply respectively; wherein when the first end of the first charge-discharge module and the second pole of the power device are turned on by the gating module and the first end of the direct current power supply is connected with the second pole of the power device, the power device works in the hard switch state; when the second end of the first charge-discharge module and the first end of the second charge-discharge module are turned on by the gating module and connected with the second pole of the power device respectively, the power device works in the soft switch state.

7. The system of claim 6, wherein, The first charge-discharge module and the second charge-discharge module each comprise a capacitor and a resistor connected in parallel.

8. A method of on-line testing of degradation of a power device, characterized by, The method is applied to the power device degradation online test system of any one of claims 1-7; the method comprises: obtaining initial electrical parameters of the power device; applying high-power microwave irradiation stress to the power device and controlling the power device to work in a target switch state; the target switch state comprises a soft switch state or a hard switch state; obtaining test electrical parameters of the power device under the target switch state and the high-power microwave irradiation stress; determining a degradation online test result of the power device according to the initial electrical parameters and the test electrical parameters.

9. The method of claim 8, wherein, The step of applying high-power microwave irradiation stress to the power device and controlling the power device to work in a target switch state comprises: obtaining test condition parameters of the power device; the test condition parameters comprise high-power microwave irradiation condition parameters and target switch state parameters; the high-power microwave irradiation condition parameters comprise irradiation power and irradiation time; applying high-power microwave irradiation stress to the power device according to the irradiation power and controlling the power device to work in a target switch state according to the target switch state parameters. After the power device is subjected to the high-power microwave irradiation stress for the irradiation time under the target switching state, the high-power microwave irradiation stress is stopped, and the power device is controlled to stop working.

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