Magnet device and magnetron sputtering cathode

Abstract

The invention provides a magnet device and a magnetron sputtering cathode, and relates to the technical field of magnetron sputtering. At least one first magnet is additionally arranged on the surface of a partial area in a curve area of an inner magnet and / or an outer magnet or replaced by at least one second magnet with higher residual magnetic field intensity, or at least one third magnet is additionally arranged between the curve area of the inner magnet and the curve area of the outer magnet; the horizontal magnetic field distribution of the curve area is alternated by strong and weak, so that the magnetic field distribution of the curve area is effectively improved, the diagonal effect is weakened or eliminated, the utilization rate of the target material is remarkably improved, the production cost is reduced, the implementation mode is more flexible, and the cost is lower.

Description

Technical Field

[0001] This application relates to the field of magnetron sputtering technology. Specifically, it relates to a magnet device and a magnetron sputtering cathode. Background Art

[0002] There is a magnet device inside the magnetron sputtering cathode. The design of the magnet device determines the magnetic field distribution, and the magnetic field distribution is an important factor affecting the target utilization rate. Improving the target utilization rate can effectively reduce production costs. The magnet device generally includes an inner magnet and an outer magnet. Among them, the polarities of the inner magnet and the outer magnet are opposite. For example, the S pole of the inner magnet faces upward, and the N pole of the outer magnet faces upward. The inner magnet and the outer magnet are generally divided into a straight channel area in the middle and a curved channel area at the end, as Figure 1 shown. Generally speaking, the greater the horizontal component of the magnetic field strength, the greater the electron concentration, and the greater the degree of etching or sputtering of the target. The magnet device forms a closed magnetic line corridor above the target, and electrons move along the magnetic line corridor. The closed magnetic line corridor causes the etched part of the target to form a closed runway shape (including the curved channel area and the straight channel area). The most severely etched part of the target usually occurs in the end area of the target (that is, the curved channel areas at both ends of the electron closed runway). When the electrons leave the curved channel area and move towards the straight channel area, due to the uneven magnetic field distribution on the target surface and the change of the magnetic field strength, the end area of the target is etched most severely and forms a diagonal distribution (referred to as the diagonal effect). After the end area of the target is etched prematurely, the target fails, thereby reducing the target utilization rate, as Figure 2 shown, Figure 2 The shaded parts in the upper left corner and the lower right corner in Figure 3 are the positions where the etching is most severe. The physical diagram of the target etching is as

[0003] shown. It can be seen that weakening or eliminating the diagonal effect is the key to improving the target utilization rate.

[0003] According to experimental measurements and simulation calculations, the horizontal component of the magnetic field strength in the end area is generally weaker than that in the straight channel area. However, the etching degree of the target in the end area is greater and shows a diagonal effect, which cannot be explained by the general conclusion (that is, the greater the horizontal component of the magnetic field strength, the greater the electron concentration, and the greater the etching degree of the target). The solution of the prior art is to increase the horizontal magnetic field strength in the end area (that is, to improve the uniformity of the magnetic field in the end area and the straight channel area), and reduce the difference in the horizontal component of the magnetic field strength between the end area and the straight channel area, thereby weakening the diagonal effect. However, since the horizontal magnetic field strength in the entire end area needs to be increased, the prior art is to install magnets with the same size as the end on the inner magnet and / or the outer magnet. However, the magnet size is restricted by the space of the magnet device, or replace the magnets at the entire end of the inner magnet and / or the outer magnet with magnets with a stronger remanent magnetization. This improvement measure has a large cost and is not flexible enough, and may not be able to achieve the expected effect of weakening or eliminating the diagonal effect well. Therefore, the structure of the magnetron sputtering cathode still needs to be further improved.

[0004] For the above problems, there is currently no effective technical solution. Summary of the Invention

[0005] The purpose of this application is to provide a magnet device and a magnetron sputtering cathode, which can significantly improve the utilization rate of the target, reduce production costs, have a more flexible implementation method, and lower costs.

[0006] This application provides a magnet device. The magnet device includes an inner magnet and an outer magnet. The inner magnet is arranged inside the outer magnet. Both the inner magnet and the outer magnet have a straight channel area in the middle and two curved channel areas at the ends. The two ends of the straight channel area are respectively connected to one of the curved channel areas. The polarities of the upper sides of the inner magnet and the outer magnet are opposite. In some areas of the curved channel areas of the inner magnet and / or the outer magnet, at least one first magnet is added to the surface or replaced with at least one second magnet with a greater residual magnetic field intensity, or at least one third magnet is added between the curved channel areas of the inner magnet and the outer magnet, so that the horizontal magnetic field distribution in the curved channel area is alternately strong and weak.

[0007] Through the above solution, by making the horizontal magnetic field distribution in the curved channel area alternately strong and weak, the magnetic field distribution in the curved channel area is effectively improved, thereby weakening or eliminating the diagonal effect and increasing the utilization rate of the target.

[0008] Optionally, a first magnet with the same polarity orientation as the inner magnet is added outside the curved channel area of the inner magnet, and / or a first magnet with the same polarity orientation as the outer magnet is added inside or outside the curved channel area of the outer magnet.

[0009] Through the above technical solution, the local magnetic field enhancement changes the overall magnetic field distribution in the curved channel area, making the horizontal magnetic field intensity in the curved channel area form an alternately strong and weak distribution pattern. This alternately strong and weak magnetic field distribution can affect the movement trajectory and speed of electrons in the curved channel area, especially can reduce the tendency of electrons to accelerate in the curved channel area. By reducing the increased movement speed of electrons, the excessive etching of the end area of the target caused by electrons when leaving the curved channel area can be effectively weakened or eliminated, that is, the diagonal effect is weakened or eliminated.

[0010] Optionally, two or more first magnets with the same polarity orientation as the inner magnet are added outside the curved channel area of the inner magnet, and the first magnets are arranged at intervals along the bending direction of the curved channel area, and / or two or more first magnets with the same polarity orientation as the outer magnet are added inside or outside the curved channel area of the outer magnet, and the first magnets are arranged at intervals along the bending direction of the curved channel area.

[0011] Through the above technical solution, a plurality of horizontal magnetic fields are formed, which are distributed alternately in strength along the bending direction. This kind of magnetic field distribution with alternating strength can affect the movement trajectory and speed of electrons in the curved region, reduce the increased movement speed of electrons, thereby effectively weakening or eliminating the diagonal effect and reducing the etching degree of the end region of the target.

[0012] Optionally, a third magnet is added between the curved region of the inner magnet and the curved region of the outer magnet. When the N pole of the inner magnet faces upward and the S pole of the outer magnet faces upward, the N pole of the third magnet faces the inner magnet, and the S pole of the third magnet faces the outer magnet. When the N pole of the inner magnet faces downward and the S pole of the outer magnet faces downward, the N pole of the third magnet faces the outer magnet, and the S pole of the third magnet faces the inner magnet.

[0013] Optionally, two or more third magnets are added between the curved region of the inner magnet and the curved region of the outer magnet. When the N pole of the inner magnet faces upward and the S pole of the outer magnet faces upward, the N pole of the third magnet faces the inner magnet, and the S pole of the third magnet faces the outer magnet. When the N pole of the inner magnet faces downward and the S pole of the outer magnet faces downward, the N pole of the third magnet faces the outer magnet, and the S pole of the third magnet faces the inner magnet, and each of the third magnets is arranged at intervals along the bending direction of the curved region.

[0014] Optionally, a part of the curved region of the inner magnet and / or the curved region of the outer magnet is replaced with a second magnet, and the polarity of the second magnet is the same as the polarity of the corresponding inner magnet or outer magnet.

[0015] Optionally, a plurality of regions in the curved region of the inner magnet and / or the curved region of the outer magnet are replaced with a plurality of second magnets, and the polarity of the second magnet is the same as the polarity of the corresponding inner magnet or outer magnet, and each of the second magnets is arranged at intervals along the bending direction of the curved region.

[0016] Optionally, the second magnet and the corresponding inner magnet or outer magnet are of an integrally formed structure.

[0017] Optionally, a plurality of the second magnets and the corresponding inner magnets or outer magnets are of an integrally formed structure.

[0018] In a second aspect, the present application provides a magnetron sputtering cathode, including the magnet device described in any one of the foregoing items.

[0019] As can be seen from the above, a magnet device and a magnetron sputtering cathode provided by the present application, by adding at least one first magnet or replacing it with at least one second magnet with a stronger residual magnetic field intensity on the surface of a partial area in the bend area of the inner magnet and / or the outer magnet, or adding at least one third magnet between the bend area of the inner magnet and the bend area of the outer magnet, so that the horizontal magnetic field distribution in the bend area is alternately strong and weak, effectively improves the magnetic field distribution in the bend area, thereby weakening or eliminating the diagonal effect, significantly improving the utilization rate of the target, reducing the production cost, and having a more flexible implementation method and lower cost.

[0020] Other features and advantages of the present application will be described in the subsequent specification, and, in part, will be obvious from the specification, or can be understood by implementing the embodiments of the present application. The objectives and other advantages of the present application can be realized and obtained by the structures specifically pointed out in the written specification and the drawings. Brief Description of the Drawings

[0021] Figure 1 Schematic structural diagram of a magnet device in the prior art.

[0022] Figure 2 Schematic diagram of the magnetic field effect of a magnet device in the prior art.

[0023] Figure 3 Schematic diagram of the etching effect of a target by a magnet device in the prior art.

[0024] Figure 4 The first schematic structural diagram of the magnet device provided by the embodiment of the present application.

[0025] Figure 5 Schematic diagram of the horizontal magnetic field intensity effect of the first structure of the magnet device provided by the embodiment of the present application.

[0026] Figure 6 The second schematic structural diagram of the magnet device provided by the embodiment of the present application.

[0027] Figure 7 The third schematic structural diagram of the magnet device provided by the embodiment of the present application.

[0028] Figure 8 The fourth schematic structural diagram of the magnet device provided by the embodiment of the present application.

[0029] Figure 9 The fifth schematic structural diagram of the magnet device provided by the embodiment of the present application.

[0030] Figure 10 Schematic diagram of the horizontal magnetic field intensity effect of the fifth structure of the magnet device provided by the embodiment of the present application.

[0031] Figure 11 This is the sixth schematic structural view of the magnet device provided by the embodiment of the present application.

[0032] Figure 12 This is the seventh schematic structural view of the magnet device provided by the embodiment of the present application.

[0033] Figure 13 This is the schematic diagram of the horizontal magnetic field intensity effect of the seventh structure of the magnet device provided by the embodiment of the present application.

[0034] Label description: 10, inner magnet; 20, outer magnet; 30, straight track area; 40, curved track area; 51, first magnet; 52, second magnet; 53, third magnet. Specific implementation manners

[0035] Next, the technical solutions in the embodiments of the present application will be clearly and completely described in conjunction with the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments. Usually, the components of the embodiments of the present application described and illustrated herein can be arranged and designed in various different configurations. Therefore, the following detailed description of the embodiments of the present application provided in the accompanying drawings is not intended to limit the scope of the present application claimed, but merely represents the selected embodiments of the present application. All other embodiments obtained by those skilled in the art based on the embodiments of the present application without creative efforts fall within the protection scope of the present application.

[0036] It should be noted that similar reference numerals and letters indicate similar items in the following drawings. Therefore, once an item is defined in one drawing, it does not need to be further defined and explained in subsequent drawings. At the same time, in the description of the present application, the terms "first", "second", etc. are only used for differential description and cannot be understood as indicating or implying relative importance.

[0037] Please refer to Figure 4 - Figure 12 , the present application provides a magnet device and a magnetron sputtering cathode, which can significantly improve the utilization rate of the target, reduce the production cost, have more flexible implementation manners and lower costs.

[0038] The present application provides a magnet device. The magnet device includes an inner magnet 10 and an outer magnet 20. The inner magnet 10 is disposed inside the outer magnet 20. Both the inner magnet 10 and the outer magnet 20 have a straight track region 30 in the middle and two curved track regions 40 at the two ends. The two ends of the straight track region 30 are respectively connected to one of the curved track regions 40. The polarities of the upper sides of the inner magnet 10 and the outer magnet 20 are opposite. In some regions of the curved track regions 40 of the inner magnet 10 and / or the outer magnet 20, at least one first magnet 51 is added to the surface or replaced with at least one second magnet 52 having a greater residual magnetic field intensity (the residual magnetic field intensity refers to the magnetic induction intensity that can still be maintained inside a magnetic material after the external magnetic field is withdrawn), or at least one third magnet 53 is added between the curved track region 40 of the inner magnet 10 and the curved track region 40 of the outer magnet 20, so that the horizontal magnetic field distribution in the curved track region 40 is alternately strong and weak.

[0039] Assume that the present application is applied to a magnetron sputtering thin film deposition process. The magnetron sputtering cathode is configured with a magnet device, and the magnet device includes an inner magnet 10 and an outer magnet 20, forming a closed magnetic field track. During sputtering, electrons in the plasma are confined by the magnetic field and move along the magnetic field line track. In the curved track region 40 of the magnet device, the movement trajectory of the electrons deflects. Due to the magnetic field distribution characteristics in the curved track region 40, especially the horizontal magnetic field intensity being lower than that in the straight track region 30, a magnetic mirror effect is formed, resulting in an increase in electron density and energy at specific diagonal positions in the curved track region 40. This phenomenon causes the target to be etched more severely at these diagonal positions, forming a diagonal effect etching pattern (as Figure 2 shown). Even if there is still a large amount of remaining material in the straight track region 30 and other parts of the curved track region 40 of the target, the entire target must be replaced due to the premature depletion of the material in the diagonal region, resulting in low target utilization rate.

[0040] Facing the above problems, the present application first analyzed the reasons for the diagonal effect in the end region of the target and found that it is related to the magnetic field distribution in the curved track region 40, especially the horizontal magnetic field intensity being lower than that in the straight track region 30, forming a magnetic mirror effect, which causes electrons to accelerate in the curved track region 40 and leads to intensified local etching. The prior art solves the problem by globally increasing the horizontal magnetic field intensity in the curved track region 40, making the horizontal magnetic field intensity in the curved track region 40 as uniform as possible with that in the straight track region 30, but this has cost and flexibility limitations. In this regard, the applicant believes that instead of changing the magnetic field of the entire curved track region 40, can the magnetic field distribution be optimized through local adjustment to weaken or eliminate the diagonal effect and improve the target utilization rate.

[0041] Specifically, in this application, through the combined action of the inner magnet 10 and the outer magnet 20, a closed magnetic field corridor is formed above the target. Electrons move within this magnetic field corridor and bombard the target to achieve sputtering. In the background art, since the horizontal magnetic field intensity in the straight section area 30 is greater than that in the end bend area 40, when electrons enter the bend area 40 from the straight section area 30, the magnetic field intensity weakens. According to the principle of the magnetic mirror effect, the parallel velocity of the electrons is converted into the vertical velocity, and at the same time, the total energy is conserved, and the movement velocity of the electrons increases. When the electrons turn in the bend area 40 and are about to leave the bend area 40, due to their increased movement velocity and movement inertia, the electrons gather at specific diagonal positions in the bend area 40, forming a diagonal effect, which causes severe etching of the target at these positions and premature failure. In this application, by adding or replacing magnets at local positions in the bend area 40, or adding magnets between the inner and outer magnet bend areas 40, the magnetic field distribution in the bend area 40 is precisely changed so that its horizontal magnetic field intensity presents a distribution pattern of alternating strong and weak. This alternating strong and weak magnetic field distribution decomposes the overall "large magnetic mirror" in the bend area 40 into multiple local "small magnetic mirrors" (as Figure 5 shown, divided into two small magnetic mirrors, forming a distribution of strong - weak - strong - weak - strong). When electrons pass through these areas with alternating strong and weak magnetic fields, the change in their velocity is restricted within a small range, avoiding continuous acceleration throughout the bend area 40. The movement trajectory and distribution of the electrons thus become more uniform, reducing excessive aggregation at the diagonal positions, thereby effectively weakening or eliminating the diagonal effect.

[0042] In some preferred embodiments, a first magnet 51 can be added outside the bend area 40 of the inner magnet 10, and the polarity orientation of this first magnet 51 is the same as that of the inner magnet 10. For example, if the N - pole of the inner magnet 10 faces upward, then the N - pole of the added first magnet 51 also faces upward. Or, a first magnet 51 can be added inside or outside the bend area 40 of the outer magnet 20, and the polarity orientation of this first magnet 51 is the same as that of the outer magnet 20. For example, if the S - pole of the outer magnet 20 faces upward, then the S - pole of the added first magnet 51 also faces upward. Or, a third magnet 53 can be added between the bend area 40 of the inner magnet 10 and the bend area 40 of the outer magnet 20. When the N - pole of the inner magnet 10 faces upward and the S - pole of the outer magnet 20 faces upward, the N - pole of this third magnet 53 faces the inner magnet 10 and the S - pole faces the outer magnet 20. When the N - pole of the inner magnet 10 faces downward and the S - pole of the outer magnet 20 faces downward, the N - pole of this third magnet 53 faces the outer magnet 20 and the S - pole faces the inner magnet 10. These specific ways of adding or replacing magnets can all achieve local adjustment of the horizontal magnetic field intensity in the bend area 40, forming a distribution of alternating strong and weak.

[0043] Through the above technical solution, during the magnetron sputtering process, the horizontal magnetic field distribution in the curved region 40 shows alternating strong and weak magnetic fields, effectively suppressing the excessive acceleration of electrons in the curved region 40 and the accumulation at the diagonal positions, weakening or eliminating the diagonal effect in the end region of the target. This makes the etching of the target in the curved region 40 more uniform, avoiding the situation where the overall failure of the target occurs due to premature etching in a local area. Therefore, the magnet device of the present application can significantly improve the utilization rate of the target and reduce the production cost. At the same time, by locally adding or replacing magnets in the curved region 40, compared with the overall adjustment or replacement of the entire curved region 40, this solution is more flexible to implement and has a lower cost.

[0044] Among them, the inner magnet 10 refers to a magnetic component disposed inside the outer magnet 20, which can be implemented by a permanent magnetic material or an electromagnetic coil, and is mainly used to jointly form a magnetic field corridor with the outer magnet 20; the outer magnet 20 refers to a magnetic component disposed outside the inner magnet 10, which can be implemented by a permanent magnetic material or an electromagnetic coil, and is mainly used to jointly form a magnetic field corridor with the inner magnet 10; the opposite polarities of the upper sides of the inner magnet 10 and the outer magnet 20 mean that the magnetic poles of the inner magnet 10 facing the target are different from the magnetic poles of the outer magnet 20 facing the target. For example, when the N pole of the inner magnet 10 faces upward, the S pole of the outer magnet 20 faces upward, or when the S pole of the inner magnet 10 faces upward, the N pole of the outer magnet 20 faces upward. It is mainly used to form a magnetic field corridor with a certain height above the target. The outside of the curved region 40 of the inner magnet 10 refers to the region radially outward relative to the curved region 40 of the inner magnet 10, and the inside or outside of the curved region 40 of the outer magnet 20 refers to the region radially inward or outward relative to the curved region 40 of the outer magnet 20.

[0045] In some embodiments, a first magnet 51 with the same polarity orientation as the inner magnet 10 is added outside the curved region 40 of the inner magnet 10, and / or a first magnet 51 with the same polarity orientation as the outer magnet 20 is added inside or outside the curved region 40 of the outer magnet 20.

[0046] Specifically, the solution of the present application adds a first magnet 51 with the same polarity orientation as the inner magnet 10 outside the curved region 40 of the inner magnet 10, and / or a first magnet 51 with the same polarity orientation as the outer magnet 20 inside or outside the curved region 40 of the outer magnet 20. Exactly because the magnetic fields of these additional magnets are in the same direction as the magnetic field of the main magnet, the magnetic fields they generate are superimposed on the magnetic fields generated by the inner magnet 10 and / or the outer magnet 20 in the curved region 40, thereby enhancing the magnetic field strength in these specific regions. This local magnetic field enhancement changes the overall magnetic field distribution in the curved region 40, making the horizontal magnetic field strength in the curved region 40 form a distribution pattern of alternating strong and weak magnetic fields. For example, as Figure 4As shown, a first magnet 51 is added outside the curved region 40 of the inner magnet 10, and a first magnet 51 is added inside the curved region 40 of the outer magnet 20. The horizontal magnetic field intensity distribution in the curved region 40 is as Figure 5 shown. This magnetic field distribution with alternating strong and weak regions can affect the movement trajectory and speed of electrons in the curved region 40. In particular, it can reduce the tendency of electrons to accelerate in the curved region 40. By reducing the increased movement speed of electrons, the excessive etching of the end region of the target caused by electrons when leaving the curved region 40 can be effectively weakened or eliminated, that is, the diagonal effect is weakened or eliminated. Therefore, the etching degree of the end region of the target is reduced, making the overall consumption of the target more uniform, thus improving the utilization rate of the target. This method of adding auxiliary magnets at specific positions can adjust the magnetic field distribution more flexibly compared to simply replacing the magnets in the entire region or adding magnets of the same size, and may have advantages in controlling costs.

[0047] In practical applications, if the upper side of the inner magnet 10 is the S pole and the upper side of the outer magnet 20 is the N pole. A first magnet 51 with the upper side being the S pole can be added outside the curved region 40 of the inner magnet 10. Simultaneously or independently, a first magnet 51 with the upper side being the N pole can be added inside or outside the curved region 40 of the outer magnet 20. These additional magnets can be arranged adjacent to the curved region 40 of the inner magnet 10 or the outer magnet 20.

[0048] Through the above technical solutions, a horizontal magnetic field distribution with alternating strong and weak regions can be formed in the curved region 40 of the inner magnet 10 and / or the outer magnet 20, thereby reducing the increased movement speed of electrons in the curved region 40, effectively weakening or eliminating the diagonal effect, reducing the etching degree of the end region of the target, and improving the utilization rate of the target.

[0049] In some embodiments, two or more first magnets 51 with the same polarity orientation as the inner magnet 10 are added outside the curved region 40 of the inner magnet 10, and the first magnets 51 are spaced apart along the bending direction of the curved region 40, and / or two or more first magnets 51 with the same polarity orientation as the outer magnet 20 are added inside or outside the curved region 40 of the outer magnet 20, and the first magnets 51 are spaced apart along the bending direction of the curved region 40.

[0050] Specifically, as Figure 6 and Figure 7As shown, outside the curved region 40 of the inner magnet 10 and / or outside the curved region 40 of the outer magnet 20, multiple regions with relatively high magnetic field intensity are formed. These high magnetic field regions are arranged at intervals to form multiple horizontal magnetic fields that are alternately strong and weak along the bending direction. This alternately strong and weak magnetic field distribution can affect the movement trajectory and speed of electrons in the curved region 40, reduce the increased movement speed of electrons, thereby effectively weakening or eliminating the diagonal effect and reducing the etching degree of the end region of the target. In this way, only the magnetic field distribution in a local area needs to be adjusted, and a small number of magnets are added or modified to achieve the alternation of strong and weak magnetic field intensity in the curved region 40, so as to more effectively suppress the diagonal effect and improve the utilization rate of the target.

[0051] In practical applications, two first magnets 51 with the same polarity orientation as the inner magnet 10 can be arranged at intervals along the bending direction of the curved region 40 outside the curved region 40 of the inner magnet 10. For example, these two first magnets 51 can be respectively arranged at about 2 / 5 and 4 / 5 positions of the outer arc of the curved region 40 (as Figure 7 shown), and their polarity orientations are consistent with that of the inner magnet 10. As another specific implementation manner, two first magnets 51 with the same polarity orientation as the outer magnet 20 can be arranged at intervals along the bending direction of the curved region 40 outside the curved region 40 of the outer magnet 20. For example, these two first magnets 51 can be respectively arranged at about 2 / 5 and 4 / 5 positions of the outer arc of the curved region 40 (as Figure 7 shown), and their polarity orientations are consistent with that of the outer magnet 20. These added first magnets 51 can be made of materials and shapes similar to the original magnets, or different materials and shapes can be used according to needs, as long as the required magnetic field distribution can be achieved; similarly, two or more first magnets 51 with the same polarity orientation as the outer magnet 20 can also be added inside the curved region 40 of the outer magnet 20, and the first magnets 51 are arranged at intervals along the bending direction of the curved region 40.

[0052] In some embodiments, a third magnet 53 is added between the curved region 40 of the inner magnet 10 and the curved region 40 of the outer magnet 20. When the N pole of the inner magnet 10 faces up and the S pole of the outer magnet 20 faces up, the N pole of the third magnet 53 faces the inner magnet 10, and the S pole of the third magnet 53 faces the outer magnet 20. When the N pole of the inner magnet 10 faces down and the S pole of the outer magnet 20 faces down, the N pole of the third magnet 53 faces the outer magnet 20, and the S pole of the third magnet 53 faces the inner magnet 10.

[0053] Among them, the third magnet 53 can be fixed to the support structure between the inner magnet 10 and the outer magnet 20 by means of adhesion, snap connection or mechanical fixation. The third magnet 53 can be arranged along the arc direction of the bend area 40, or arranged at a specific position in the bend area 40, such as the center position of the bend area 40, as Figure 8 shown.

[0054] Specifically, the reason why the solution of the present application can weaken or eliminate the diagonal effect is that by adding the third magnet 53 between the bend area 40 of the inner magnet 10 and the bend area 40 of the outer magnet 20, the magnetic field distribution in the bend area 40 can be adjusted more precisely. Due to the interaction between the third magnet 53 and the inner magnet 10 and the outer magnet 20, the horizontal magnetic field distribution in the bend area 40 shows a state of alternating strong and weak. This alternating strong and weak magnetic field distribution can more effectively control the movement trajectory of electrons, make the electrons more evenly distributed on the surface of the target, and thus improve the utilization rate of the target. For example, when the N pole of the inner magnet 10 faces upward and the S pole of the outer magnet 20 faces upward, the N pole of the third magnet 53 faces the inner magnet 10 and the S pole faces the outer magnet 20. This means that the third magnet 53 forms a magnetic field bridge between the inner magnet 10 and the outer magnet 20, enhancing the magnetic field connection between the inner magnet 10 and the outer magnet 20, making the magnetic force lines more concentrated in the bend area 40, and increasing the magnetic field strength in this area. Thus, the magnetic field distribution in the bend area 40 shows a state of alternating strong and weak. On the contrary, when the N pole of the inner magnet 10 faces downward and the S pole of the outer magnet 20 faces downward, the polarity direction of the third magnet 53 is also adjusted accordingly to achieve the same effect. In this way, regardless of the polarity of the inner magnet 10 and the outer magnet 20, it can be ensured that the magnetic field distribution in the bend area 40 shows a state of alternating strong and weak, thereby more effectively weakening the diagonal effect and improving the utilization rate of the target.

[0055] In some embodiments, two or more third magnets 53 are added between the bend area 40 of the inner magnet 10 and the bend area 40 of the outer magnet 20. When the N pole of the inner magnet 10 faces upward and the S pole of the outer magnet 20 faces upward, the N pole of the third magnet 53 faces the inner magnet 10, and the S pole of the third magnet 53 faces the outer magnet 20. When the N pole of the inner magnet 10 faces downward and the S pole of the outer magnet 20 faces downward, the N pole of the third magnet 53 faces the outer magnet 20, and the S pole of the third magnet 53 faces the inner magnet 10, and each third magnet 53 is arranged at intervals along the bending direction of the bend area 40.

[0056] Among them, two or more third magnets 53 refer to arranging a plurality of independent third magnets 53 between the bend area 40 of the inner magnet 10 and the bend area 40 of the outer magnet 20. These third magnets 53 are not closely arranged along the bending direction of the bend area 40, but there are gaps, as Figure 9 shown.

[0057] Specifically, by adding two or more third magnets 53 between the curved region 40 of the inner magnet 10 and the curved region 40 of the outer magnet 20, and arranging these third magnets 53 at intervals along the bending direction of the curved region 40, a horizontal magnetic field distribution with alternating strong and weak fields is formed in the curved region 40. Due to this magnetic field distribution with alternating strong and weak fields, the increased speed of the electrons in the curved region 40 is effectively reduced during their movement. Specifically, when the N pole of the inner magnet 10 faces upward and the S pole of the outer magnet 20 faces upward, the N pole of the third magnet 53 faces the inner magnet 10 and the S pole faces the outer magnet 20. This polarity setting causes the magnetic field generated by the third magnet 53 to interact with the magnetic fields of the inner and outer magnets 20 in the curved region 40, enhancing the local horizontal magnetic field near the position of the third magnet 53 and weakening the horizontal magnetic field at the interval positions. By adjusting the number and spacing of the third magnets 53, the magnetic field gradient and fluctuation pattern in the curved region 40 can be finely controlled, thereby more effectively guiding the electron movement trajectory, suppressing the acceleration of the electrons in the curved region 40, reducing the accumulation of electrons in a specific region, and further weakening or eliminating the diagonal effect of the target material. This method of arranging multiple magnets at intervals provides higher flexibility and lower cost compared to simply increasing or replacing large-sized magnets, and can be optimized and adjusted according to different sputtering processes and target material characteristics.

[0058] In practical applications, for example, adding two third magnets 53, these two third magnets 53 can be evenly spaced along the bending direction of the curved region 40. For example, the arc length of the curved region 40 is approximately divided into five segments, and these two third magnets 53 are placed at about the 2 / 5 and 4 / 5 positions, as Figure 9 shown. In this way, two local magnetic field enhancement points can be formed in the curved region 40, as Figure 10 shown, and a relatively weakened magnetic field point is formed in the region between them, thereby achieving a horizontal magnetic field distribution with alternating strong and weak fields and effectively controlling the movement of electrons in the curved region 40.

[0059] In some embodiments, a part of the curved region 40 of the inner magnet 10 and / or the curved region 40 of the outer magnet 20 is replaced with a second magnet 52, and the polarity of the second magnet 52 is the same as the corresponding polarity of the inner magnet 10 or the outer magnet 20.

[0060] Among them, the partial area in the curved region 40 of the inner magnet 10 and / or the curved region 40 of the outer magnet 20 refers to a specific range inside the curved part of the inner magnet 10 or the outer magnet 20, rather than the entire curved part. The local position that needs to adjust the magnetic field can be determined according to magnetic field simulation or experimental results; replacement means removing the original magnetic material or structure in this partial area and replacing it with the second magnet 52, which can be achieved by physical installation, embedding or integral molding, etc.

[0061] Specifically, the solution of the present application enhances the magnetic field intensity at a specific local position in the curved region 40 by replacing a partial area in the curved region 40 of the inner magnet 10 and / or the curved region 40 of the outer magnet 20 with a second magnet 52, and the polarity of the second magnet 52 is the same as the polarity of the corresponding inner magnet 10 or outer magnet 20. For example, the middle partial area in the curved region 40 of the inner magnet 10 and the curved region 40 of the outer magnet 20 is replaced with a second magnet 52 (such as Figure 11 the shaded part in). Since it is a partial area rather than the entire curved region 40 that is replaced, and the second magnet 52 has a higher remanent magnetic field intensity, the horizontal magnetic field distribution in the curved region 40 is no longer uniform, but a magnetic field enhancement point is formed in the replaced area, creating a difference in magnetic field intensity with the surrounding unreplaced areas, thus realizing the alternating strong and weak horizontal magnetic field distribution in the curved region 40. This alternating strong and weak magnetic field distribution can more effectively guide the electron movement trajectory, avoid excessive aggregation and acceleration of electrons at specific positions in the curved region 40, and thus weaken the diagonal etching effect of the target. Compared with replacing the magnet with a higher remanent magnetic field intensity as a whole (which has a higher cost), this solution provides a more flexible and economical magnetic field adjustment method by selectively and locally enhancing the magnetic field, can more precisely optimize the magnetic field distribution in the curved region 40, and further improve the target utilization rate.

[0062] In some cases, an integral molding process can be adopted. When manufacturing the inner magnet 10 or the outer magnet 20, a magnetic material with a higher remanent magnetic field intensity is directly used to fill or sinter in a specific part of the curved region 40 to form a local high magnetic field intensity region, that is, the second magnet 52, so as to achieve the replacement effect.

[0063] In some embodiments, multiple areas in the curved region 40 of the inner magnet 10 and / or the curved region 40 of the outer magnet 20 are replaced with multiple second magnets 52, the polarity of the second magnets 52 is the same as the polarity of the corresponding inner magnet 10 or outer magnet 20, and the second magnets 52 are arranged at intervals along the bending direction of the curved region 40.

[0064] Among them, the multiple regions refer to several positions or ranges divided along the bending direction within the bending region 40, which can be determined by equally or unequally dividing the bending region 40 along the bending direction.

[0065] Specifically, two regions can be selected along the bending direction of the bending region 40 of the outer magnet 20, and the original outer magnets 20 in these two regions are replaced with two second magnets 52 with a greater remaining magnetic field intensity. These two second magnets 52 are arranged at intervals along the bending direction of the bending region 40, such as Figure 12 shown, and the original outer magnets 20 are retained between these regions. The polar orientation of the replaced second magnet 52 is the same as that of the original outer magnet 20 being replaced. In this way, a distribution where the horizontal magnetic field intensity in the bending region 40 of the outer magnet 20 shows an alternating strong and weak pattern along the bending direction can be formed, as Figure 13 shown, which can effectively guide the movement of electrons and weaken the diagonal effect. Similarly, a similar replacement method can also be adopted in the bending region 40 of the inner magnet 10, or the replacement can be carried out simultaneously in the bending regions 40 of both the inner magnet 10 and the outer magnet 20.

[0066] In some embodiments, the second magnet 52 and the corresponding inner magnet 10 or outer magnet 20 are of an integrally formed structure.

[0067] Specifically, by making the second magnet 52 and the corresponding inner magnet 10 or outer magnet 20 into an integrally formed structure, problems such as insufficient bonding surface strength, loosening or even detachment caused by long-term stress or temperature changes in the traditional splicing or bonding methods are avoided. The integrally formed structure enables a continuous and high-strength connection between the second magnet 52 and the inner magnet 10 or outer magnet 20, greatly improving the overall mechanical strength of the magnet device and its resistance to vibration and thermal stress, thereby ensuring that the adjusted alternating strong and weak horizontal magnetic field distribution in the bending region 40 can exist continuously and stably. This stability is crucial for the magnetron sputtering process. A stable magnetic field distribution can ensure that the trajectory and density of electrons moving in the magnetic field line corridor are not affected, avoid magnetic field distortion caused by magnet loosening, and then maintain the uniformity of target etching, weaken or eliminate the diagonal effect, and ultimately improve the target utilization rate and the stability of the sputtering process.

[0068] Among them, different components or magnetic property magnetic materials can be sintered together at high temperature through a sintering process to form a whole, or the magnetic powder can be pressed in a mold and then sintered, or the magnetic material and the binder can be mixed and then injection molded or compression molded, so that the second magnet 52 and the inner magnet 10 or outer magnet 20 form a tight bond at the molecular or crystal level, aiming to enhance the connection strength between the second magnet 52 and the inner magnet 10 or outer magnet 20 and improve the overall stability and reliability of the structure.

[0069] In some embodiments, the plurality of second magnets 52 and the corresponding inner magnet 10 or outer magnet 20 are integrally formed structures.

[0070] Specifically, by designing the plurality of second magnets 52 and the corresponding inner magnet 10 or outer magnet 20 as integrally formed structures, it is ensured that these second magnets 52 for adjusting the horizontal magnetic field distribution in the curved region 40 can be firmly fixed. This integrated structure avoids problems such as insufficient connection strength and failure after long-term use that may be brought about by traditional connection methods. Through integral molding, a tight and inseparable whole is formed between the plurality of second magnets 52 and the inner magnet 10 or outer magnet 20, significantly improving the overall structural strength and stability of the magnet device in the curved region 40. This enables the technical solution of forming a magnetic field distribution with alternating strong and weak areas in the curved region 40 by a plurality of second magnets 52 arranged at intervals to be realized stably and reliably without being troubled by connection stability problems. Therefore, the integrally formed structure provides a structural guarantee for the precise control and long-term stability of the magnetic field distribution in the curved region 40, thereby more effectively weakening the diagonal effect and improving the target utilization rate.

[0071] In a second aspect, the present application provides a magnetron sputtering cathode including the magnet device of any one of the foregoing.

[0072] Among them, a magnetron sputtering cathode refers to the core component used for the magnetron sputtering process, which may include components such as a target, a backing plate, a cooling structure, and a magnet device. Its purpose is to confine plasma through a magnetic field to achieve effective sputtering of the target; a magnet device refers to a combination of magnets arranged inside the magnetron sputtering cathode for generating a specific magnetic field distribution, which may include permanent magnets or electromagnets. Its purpose is to guide the movement trajectory of charged particles and affect the etching area and efficiency of the target.

[0073] The solution of the present application optimizes the internal magnetic field distribution of the cathode by integrating the aforementioned improved magnet device of the present application into the magnetron sputtering cathode. This is because the improved magnet device changes the magnetic field characteristics in the curved region 40 by achieving an alternating strong and weak horizontal magnetic field distribution in the curved region 40. It is precisely due to this horizontal magnetic field with an alternating strong and weak distribution that can more effectively confine and guide the electrons in the plasma, making their movement trajectory and density distribution on the target surface more uniform in a closed racetrack shape, especially in the curved region 40 where over-etching and diagonal effects are prone to occur in traditional technologies. This uniform plasma distribution and electron bombardment make the target etching process tend to be consistent on all racetracks, significantly reducing local over-consumption in the end regions, effectively weakening or eliminating the diagonal effect, improving the overall utilization rate of the target, extending the service life of the target, thereby reducing production costs and enhancing the overall performance of the magnetron sputtering cathode.

[0074] In this document, relational terms such as first and second are used solely to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any actual relationship or order between these entities or operations.

[0075] The above description is only for the embodiments of the present application and is not intended to limit the protection scope of the present application. For those skilled in the art, the present application may have various changes and modifications. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principle of the present application shall be included within the protection scope of the present application.

Claims

1. A magnet device, the magnet device comprising an inner magnet (10) and an outer magnet (20), the inner magnet (10) being disposed inside the outer magnet (20), both the inner magnet (10) and the outer magnet (20) having a straight track region (30) in the middle and two curved track regions (40) at the two ends, both ends of the straight track region (30) being respectively connected to one of the curved track regions (40), the polarities of the upper sides of the inner magnet (10) and the outer magnet (20) being opposite, characterized in that, In a partial area of the curved region (40) of the inner magnet (10) and / or the outer magnet (20), at least one first magnet (51) is added to the surface or replaced with at least one second magnet (52) having a greater residual magnetic field strength, or at least one third magnet (53) is added between the curved region (40) of the inner magnet (10) and the curved region (40) of the outer magnet (20), so that the horizontal magnetic field distribution in the curved region (40) is alternating between strong and weak.

2. The magnet device according to claim 1, wherein, A first magnet (51) with the same polarity orientation as the inner magnet (10) is added outside the curved region (40) of the inner magnet (10), and / or a first magnet (51) with the same polarity orientation as the outer magnet (20) is added inside or outside the curved region (40) of the outer magnet (20).

3. The magnet device according to claim 1, characterized in that, Two or more first magnets (51) with the same polarity orientation as the inner magnet (10) are added outside the curved region (40) of the inner magnet (10), and the first magnets (51) are spaced apart along the bending direction of the curved region (40), and / or two or more first magnets (51) with the same polarity orientation as the outer magnet (20) are added inside or outside the curved region (40) of the outer magnet (20), and the first magnets (51) are spaced apart along the bending direction of the curved region (40).

4. The magnet device according to claim 1, characterized in that, A third magnet (53) is added between the curved region (40) of the inner magnet (10) and the curved region (40) of the outer magnet (20). When the N pole of the inner magnet (10) faces upward and the S pole of the outer magnet (20) faces upward, the N pole of the third magnet (53) faces the inner magnet (10), and the S pole of the third magnet (53) faces the outer magnet (20). When the N pole of the inner magnet (10) faces downward and the S pole of the outer magnet (20) faces downward, the N pole of the third magnet (53) faces the outer magnet (20), and the S pole of the third magnet (53) faces the inner magnet (10).

5. The magnet device according to claim 1, characterized in that, Two or more third magnets (53) are added between the curved region (40) of the inner magnet (10) and the curved region (40) of the outer magnet (20). When the N pole of the inner magnet (10) faces upward and the S pole of the outer magnet (20) faces upward, the N pole of the third magnet (53) faces the inner magnet (10), and the S pole of the third magnet (53) faces the outer magnet (20). When the N pole of the inner magnet (10) faces downward and the S pole of the outer magnet (20) faces downward, the N pole of the third magnet (53) faces the outer magnet (20), and the S pole of the third magnet (53) faces the inner magnet (10), and the third magnets (53) are spaced apart along the bending direction of the curved region (40).

6. The magnet device according to claim 1, characterized in that, Replace a partial area in the curved region (40) of the inner magnet (10) and / or the curved region (40) of the outer magnet (20) with one of the second magnets (52), and the polarity of the second magnet (52) is the same as the polarity orientation of the corresponding inner magnet (10) or outer magnet (20).

7. The magnet device according to claim 1, wherein, Replace a plurality of areas in the curved region (40) of the inner magnet (10) and / or the curved region (40) of the outer magnet (20) with a plurality of the second magnets (52), the polarity of the second magnet (52) is the same as the polarity orientation of the corresponding inner magnet (10) or outer magnet (20), and each of the second magnets (52) is arranged at intervals along the bending direction of the curved region (40).

8. The magnet device according to claim 6, characterized in that, The second magnet (52) and the corresponding inner magnet (10) or outer magnet (20) are of an integrally formed structure.

9. The magnet device according to claim 7, characterized in that, A plurality of the second magnets (52) and the corresponding inner magnet (10) or outer magnet (20) are of an integrally formed structure.

10. A magnetron sputtering cathode, characterized in that, Comprise the magnet device according to any one of claims 1-9.

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