Epitaxial growth system and method

Abstract

The present application relates to the technical field of epitaxial growth, and specifically provides an epitaxial growth system and method, which includes: an upper half-moon graphite cavity; a lower half-moon graphite cavity; a carrier plate; a first temperature measurement component; a reaction gas intake component; a plurality of exhaust components; a controller, which is used to analyze whether there is a temperature measurement area with abnormal temperature according to actual temperature information and a preset target temperature during the epitaxial growth process, and is also used to obtain an intake adjustment amount according to the deviation value between the actual temperature information and the target temperature when there is a temperature measurement area with abnormal temperature, and then adjust the intake amount of the intake unit corresponding to the temperature measurement area with abnormal temperature according to the intake adjustment amount, and adjust the exhaust ratio of each exhaust component according to the minimum distance between the temperature measurement area with abnormal temperature and each exhaust component; the system can make the temperature field in the reaction chamber uniform without affecting the uniformity of the gas flow field in the reaction chamber.

Description

Technical Field

[0001] The present application relates to the field of epitaxial growth technology, and in particular, to an epitaxial growth system and method. Background Art

[0002] During the epitaxial growth process, the reaction chamber may have an uneven temperature field distribution due to the influence of factors such as airflow. The uneven temperature field distribution of the reaction chamber will lead to uneven temperature distribution of the epitaxial wafer. Since the temperature of the epitaxial wafer is related to the growth quality of the epitaxial layer, and the related technology cannot perform zone temperature adjustment on the reaction chamber, the related technology has the problem of uneven temperature distribution of the epitaxial wafer due to the inability to perform zone temperature adjustment on the reaction chamber when the temperature field distribution of the reaction chamber is uneven, and the growth quality of the epitaxial layer ultimately formed has poor consistency.

[0003] There is no effective technical solution to the above problems. It should be noted that the above information disclosed in this section is only used to understand the background of the present invention, and therefore may contain information that does not constitute prior art. Summary of the Invention

[0004] The purpose of this application is to provide an epitaxial growth system and method that can effectively solve the problem of uneven temperature distribution of the epitaxial wafer and poor consistency of the growth quality of the epitaxial layer formed due to the inability to zone the reaction chamber for temperature adjustment when the temperature field distribution of the epitaxial wafer is uneven.

[0005] In a first aspect, the present application provides an epitaxial growth system, comprising:

[0006] Upper half of the graphite cavity;

[0007] The lower half of the graphite cavity and the upper half of the graphite cavity form a reaction chamber, and the reaction chamber is horizontally divided into multiple temperature measurement areas;

[0008] A carrier plate, located in the reaction chamber, for carrying the epitaxial wafer;

[0009] A first temperature measurement component is provided outside the reaction chamber and is used to measure the actual temperature information corresponding to each temperature measurement area;

[0010] The reaction gas intake assembly is arranged on the upper half of the graphite cavity, and includes a plurality of intake units. Each temperature measurement area corresponds to at least one intake unit that discharges gas vertically downward.

[0011] Multiple exhaust components are symmetrically arranged on both sides of the reaction chamber;

[0012] The controller is used to control the reaction gas intake assembly to supply reaction gas to the reaction chamber and control all exhaust assemblies to exhaust synchronously during the epitaxial growth process, and analyze whether there is a temperature measurement area with abnormal temperature based on the actual temperature information and the preset target temperature. It is also used to obtain the intake adjustment amount based on the deviation value between the actual temperature information and the target temperature when there is a temperature measurement area with abnormal temperature, and then adjust the intake amount of the intake unit corresponding to the temperature measurement area with abnormal temperature according to the intake adjustment amount, and adjust the exhaust ratio of each exhaust assembly according to the minimum distance between the temperature measurement area with abnormal temperature and each exhaust assembly.

[0013] The present application provides an epitaxial growth system that can achieve uniform temperature field distribution in a reaction chamber without affecting the uniformity of the gas flow field in the reaction chamber through the cooperation of a first temperature measurement component, an air intake unit, and an exhaust component. That is, the present application can achieve zoned temperature control of the epitaxial wafer by zoned temperature control of the reaction chamber and achieve uniform temperature distribution of the epitaxial wafer by making the temperature field distribution in the reaction chamber uniform. Therefore, the present application can effectively solve the problem of uneven temperature distribution of the epitaxial wafer due to the inability to zone temperature control the reaction chamber when the temperature field distribution of the epitaxial wafer is uneven, and the problem of poor consistency in the growth quality of the epitaxial layer ultimately formed.

[0014] Optionally, when the number of temperature measurement areas with abnormal temperature is one, the process of obtaining the intake air adjustment amount according to the deviation between the actual temperature information and the target temperature includes:

[0015] A1. Calculating a temperature deviation value based on actual temperature information corresponding to the temperature measurement area with abnormal temperature and a target temperature, and then obtaining an intake air adjustment amount based on the temperature deviation value and a first preset conversion relationship;

[0016] The controller is further configured to obtain, for each temperature measurement area with normal temperature, a first temperature influence amount based on the intake air adjustment amount, the minimum distance between the intake air adjustment amount and the temperature measurement area with abnormal temperature, and a second preset conversion relationship, and obtain an intake air compensation amount based on the first temperature influence amount and a third preset conversion relationship;

[0017] The process of adjusting the air intake volume of the air intake unit corresponding to the temperature measurement area with the abnormal temperature according to the air intake adjustment amount includes:

[0018] The air intake volume of the air intake unit corresponding to the temperature measurement area with abnormal temperature is adjusted according to the air intake adjustment amount, and the air intake volume of the air intake unit corresponding to the temperature measurement area with normal temperature is adjusted according to the air intake compensation amount.

[0019] Since the reaction gas entering the reaction chamber will diffuse to the surroundings, when the air intake volume of the air intake unit corresponding to the temperature measuring area with abnormal temperature is adjusted according to the air intake adjustment amount, the air flow in the temperature measuring area with normal temperature will change to a certain extent. The change in air flow will cause the temperature in the temperature measuring area with normal temperature to change. The technical solution can quantify the influence of adjusting the air intake volume of the temperature measuring area with abnormal temperature on the temperature of the temperature measuring area with normal temperature by obtaining the first temperature influence amount according to the air intake adjustment amount, the minimum distance between the temperature measuring area with abnormal temperature and the second preset conversion relationship, and obtain the temperature influence amount according to the first temperature influence amount and the third preset conversion relationship. The method of taking the air intake compensation amount and adjusting the air intake amount of the corresponding air intake unit according to the air intake compensation amount eliminates the influence of adjusting the air intake amount of the temperature measuring area with abnormal temperature on the temperature of the temperature measuring area with normal temperature. Therefore, this technical solution can effectively avoid the situation where the temperature measuring area with normal temperature is transformed into the temperature measuring area with abnormal temperature due to the influence of adjusting the air intake amount of the temperature measuring area with abnormal temperature on the temperature of the temperature measuring area with normal temperature. That is, this technical solution can effectively improve the accuracy and reliability of temperature regulation, thereby effectively improving the temperature field uniformity in the reaction chamber and the temperature distribution uniformity of the epitaxial wafer, and then effectively improving the growth quality consistency of the epitaxial layer.

[0020] Optionally, the air intake unit includes an air intake channel and an air outlet plate, the two ends of the air intake channel are respectively connected to the reaction gas supply component and the air outlet plate, the air intake channel is provided with a first flow regulating component for regulating the flow of the reaction gas, and the center of the air outlet plate is provided with a first air outlet.

[0021] Optionally, the air outlet plate is further provided with a plurality of second air outlet holes, and the plurality of second air outlet holes are arranged in a circular array outside the first air outlet holes.

[0022] Since the outer circumferential array of the first gas outlet holes of this technical solution has multiple second gas outlet holes, that is, this technical solution is equivalent to converting the gas outlet mode from single central gas outlet to multi-point dispersed gas outlet, so this technical solution can make the reaction gas diffuse into the reaction chamber better and more evenly to avoid the situation where the local gas concentration is too high or too low, thereby effectively improving the uniformity of the gas concentration distribution, and further effectively avoiding the situation where the growth quality of the epitaxial layer in different areas is inconsistent due to the influence of the uniformity of the gas concentration distribution.

[0023] Optionally, the installation height of the air inlet of the exhaust assembly is greater than the height of the bottom of the reaction chamber.

[0024] Since graphite debris or dust may accumulate at the bottom of the reaction chamber, and this technical solution sets the installation height of the air inlet of the exhaust assembly to be greater than the height of the bottom of the reaction chamber, this technical solution can effectively reduce the situation where the exhaust assembly inhales graphite debris or dust, thereby effectively reducing the situation where the exhaust efficiency of the exhaust assembly decreases due to the exhaust assembly inhaling graphite debris or dust, and the exhaust assembly is damaged or even destroyed, thereby effectively reducing the situation where the gas flow field uniformity in the reaction chamber and the growth quality of the epitaxial layer are affected due to the decrease in the exhaust efficiency of some exhaust assemblies.

[0025] Optionally, the epitaxial growth system further includes a rotating assembly, which is disposed on the lower semi-lunar graphite cavity and is used to drive the carrier to rotate.

[0026] Optionally, the rotating assembly includes a flotation channel and a flotation gas supply assembly. The flotation channel is arranged in the lower semi-lunar graphite cavity. The flotation channel has multiple air outlets located directly below the carrier and arranged in a circular array along the axis of the carrier. The extension direction of the air outlet makes an angle of 30°-60° with the bottom surface of the carrier. The air inlet of the flotation channel is connected to the flotation gas supply assembly through a second flow regulating assembly.

[0027] Optionally, the epitaxial growth system also includes a second temperature measurement component, which is used to measure the cavity temperature information of the lower half of the graphite cavity. The controller is also used to generate an alarm message when there is no temperature measurement area with temperature abnormality and the difference between the actual temperature information and the cavity temperature information exceeds the first preset range.

[0028] Optionally, the epitaxial growth system further includes a converging pipe and an exhaust gas treatment component, the two ends of the converging pipe are respectively connected to the gas outlets of all exhaust components and the exhaust gas treatment component, and a butterfly valve is provided on the converging pipe.

[0029] In a second aspect, the present application further provides an epitaxial growth method, which is applied to an epitaxial growth system provided in the first aspect above. The epitaxial growth method comprises the following steps:

[0030] S1. During the epitaxial growth process, control the reaction gas inlet assembly to supply reaction gas to the reaction chamber and control all exhaust assemblies to exhaust gas synchronously, and analyze whether there is a temperature measurement area with abnormal temperature based on the actual temperature information and the preset target temperature;

[0031] S2. When there is a temperature measurement area with abnormal temperature, the intake adjustment amount is obtained according to the deviation value between the actual temperature information and the target temperature, and then the intake volume of the intake unit corresponding to the temperature measurement area with abnormal temperature is adjusted according to the intake adjustment amount, and the exhaust ratio of each exhaust component is adjusted according to the minimum distance between the temperature measurement area with abnormal temperature and each exhaust component.

[0032] The present application provides an epitaxial growth method, which can achieve uniform temperature field distribution in a reaction chamber without affecting the uniformity of the gas flow field in the reaction chamber through the cooperation of a first temperature measurement component, an air intake unit and an exhaust component. That is, the present application can achieve zoned temperature control of the epitaxial wafer by zoned temperature control of the reaction chamber and achieve uniform temperature distribution of the epitaxial wafer by making the temperature field distribution in the reaction chamber uniform. Therefore, the present application can effectively solve the problem of uneven temperature distribution of the epitaxial wafer due to the inability to zone temperature control the reaction chamber when the temperature field distribution of the epitaxial wafer is uneven, and the problem of poor consistency in the growth quality of the epitaxial layer finally formed.

[0033] From the above, it can be seen that the epitaxial growth system and method provided by the present application can achieve uniform temperature field distribution in the reaction chamber without affecting the uniformity of the gas flow field in the reaction chamber through the cooperation of the first temperature measurement component, the air intake unit and the exhaust component. That is, the present application can achieve zoned temperature control of the epitaxial wafer by zoning the temperature of the reaction chamber and make the temperature distribution of the epitaxial wafer uniform by making the temperature field distribution in the reaction chamber uniform. Therefore, the present application can effectively solve the problem of uneven temperature distribution of the epitaxial wafer due to the inability to zone the temperature of the reaction chamber when the temperature field distribution of the epitaxial wafer is uneven, and the problem of poor consistency in the growth quality of the epitaxial layer finally formed. BRIEF DESCRIPTION OF THE DRAWINGS

[0034] Figure 1 A schematic structural diagram of an epitaxial growth system provided in an embodiment of the present application.

[0035] Figure 2 This is a schematic diagram of the cross-sectional structure of the upper half-moon graphite cavity and the lower half-moon graphite cavity provided in an embodiment of the present application.

[0036] Figure 3 A schematic structural diagram of multiple air intake units provided in an embodiment of the present application.

[0037] Figure 4 A schematic diagram of the control relationship of an epitaxial growth system provided in an embodiment of the present application.

[0038] Figure 5 A flow chart of an epitaxial growth method provided in an embodiment of the present application.

[0039] Figure numerals: 1. upper half of the graphite cavity; 2. lower half of the graphite cavity; 3. reaction chamber; 4. carrier plate; 5. first temperature measurement component; 6. air intake unit; 61. air intake channel; 62. air outlet plate; 7. exhaust component; 8. controller; 9. pneumatic valve; 10. mass flow meter; 11. first air outlet; 12. second air outlet; 13. rotating component; 131. flotation channel; 132. air outlet; 14. confluence pipe; 15. exhaust gas treatment component; 16. butterfly valve. DETAILED DESCRIPTION

[0040] The technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all of the embodiments. The components of the embodiments of the present application generally described and shown in the drawings here can be arranged and designed in various different configurations. Therefore, the following detailed description of the embodiments of the present application provided in the drawings is not intended to limit the scope of the application for protection, but merely represents the selected embodiments of the present application. Based on the embodiments of the present application, all other embodiments obtained by those skilled in the art without making creative work fall within the scope of protection of the present application.

[0041] It should be noted that similar reference numerals and letters represent similar items in the following drawings. Therefore, once an item is defined in one drawing, it does not need to be further defined or explained in subsequent drawings. At the same time, in the description of this application, the terms "first", "second", etc. are only used to distinguish the description and should not be understood as indicating or implying relative importance.

[0042] First, as Figures 1-4 As shown, the present application provides an epitaxial growth system, which includes:

[0043] Upper half moon graphite cavity 1;

[0044] The lower half-moon graphite cavity 2 and the upper half-moon graphite cavity 1 form a reaction cavity 3, and the reaction cavity 3 is horizontally divided into multiple temperature measurement areas;

[0045] The carrier plate 4 is located in the reaction chamber 3 and is used to carry the epitaxial wafer;

[0046] The first temperature measurement component 5 is arranged outside the reaction chamber 3 and is used to measure the actual temperature information corresponding to each temperature measurement area;

[0047] The reaction gas intake assembly is arranged on the upper half-moon graphite cavity 1 and includes a plurality of intake units 6. Each temperature measurement area corresponds to at least one intake unit 6 that discharges gas vertically downward.

[0048] Multiple exhaust components 7 are symmetrically arranged on both sides of the reaction chamber 3;

[0049] The controller 8 is used to control the reaction gas intake assembly to supply reaction gas to the reaction chamber 3 and control all exhaust assemblies 7 to exhaust synchronously during the epitaxial growth process, and analyze whether there is a temperature measurement area with abnormal temperature based on the actual temperature information and the preset target temperature. It is also used to obtain the intake adjustment amount based on the deviation value between the actual temperature information and the target temperature when there is a temperature measurement area with abnormal temperature, and then adjust the intake amount of the intake unit 6 corresponding to the temperature measurement area with abnormal temperature according to the intake adjustment amount, and adjust the exhaust ratio of each exhaust assembly 7 according to the minimum distance between the temperature measurement area with abnormal temperature and each exhaust assembly 7.

[0050] The materials of the upper half-moon graphite cavity 1 and the lower half-moon graphite cavity 2 of this embodiment are preferably both high-purity graphite, the upper half-moon graphite cavity 1 can be an existing upper half-moon graphite cavity 1, the lower half-moon graphite cavity 2 can be an existing lower half-moon graphite cavity 2, the upper half-moon graphite cavity 1 is located above the lower half-moon graphite cavity 2, the upper half-moon graphite cavity 1 is preferably connected to the lower half-moon graphite cavity 2 by side supports, the upper half-moon graphite cavity 1 and the lower half-moon graphite cavity 2 form a reaction chamber 3, and this embodiment can use a grid division method to divide the reaction chamber 3 horizontally into multiple temperature measurement areas. The carrier 4 of this embodiment can be an existing carrier 4, which is used to carry epitaxial wafers that need to be epitaxially grown, and the carrier 4 is located in the reaction chamber 3. The first temperature measurement component 5 of this embodiment can be an existing temperature sensor or an infrared thermal imager. The first temperature measurement component 5 measures the actual temperature information corresponding to each temperature measurement area through the temperature measuring hole set on the upper semi-lunar graphite cavity 1 or the lower semi-lunar graphite cavity 2, that is, this embodiment is equivalent to using the first temperature measurement component 5 to measure the gas temperature of different areas in the reaction chamber 3. Specifically, the coverage area of ​​the temperature measurement area of ​​this embodiment is smaller than the coverage area of ​​the epitaxial wafer, that is, the number of temperature measurement areas that intersect with the epitaxial wafer is multiple. It should be understood that since the gas in the reaction chamber 3 will conduct heat conduction with the epitaxial wafer, the actual temperature information corresponding to the temperature measurement area that intersects with the epitaxial wafer can reflect the temperature of a specific area on the epitaxial wafer. The reaction gas intake assembly of this embodiment is arranged on the upper half of the graphite cavity 1, that is, this embodiment is equivalent to supplying reaction gas into the reaction chamber 3 by top intake. Since the reaction gas intake assembly of this embodiment includes multiple intake units 6, and each temperature measuring area corresponds to at least one intake unit 6, this embodiment can realize the zoning adjustment of the intake flow rate of the reaction chamber 3. Preferably, each temperature measuring area corresponds to an intake unit 6 that discharges gas vertically downward. The exhaust assembly 7 of this embodiment can be an existing exhaust pipe. The number of exhaust assemblies 7 in this embodiment is multiple, and the exhaust pipe is preferably provided with a solenoid valve. In this embodiment, the exhaust ratio of each exhaust assembly 7 can be adjusted by adjusting the opening of the solenoid valve on each exhaust pipe. The multiple exhaust assemblies 7 are symmetrically arranged on both sides of the reaction chamber 3. Therefore, this embodiment can achieve multi-directional symmetrical and uniform exhaust of the reaction chamber 3 by making the exhaust ratio of each exhaust assembly 7 the same. It should be understood that since this embodiment adopts a top air intake method to supply the reaction gas into the reaction chamber 3, and the exhaust assemblies 7 are arranged on both sides of the reaction chamber 3, the reaction gas entering the reaction chamber 3 will diffuse to both sides of the reaction chamber 3. The reaction gas diffused to both sides of the reaction chamber 3 can blow powder dropped from the upper half of the graphite cavity 1 to unexpected areas of the epitaxial wafer. Therefore, this embodiment can effectively reduce the situation where powder falls onto the epitaxial wafer, thereby effectively reducing the situation where the finally formed epitaxial wafer has growth defects due to powder deposited on the upper half of the graphite cavity 1 falling onto the epitaxial wafer.It should be understood that the prior art uses only one exhaust assembly 7 to exhaust the reaction chamber 3 in a single direction. If the total exhaust volume is too large, the graphite components (e.g., the upper half-moon graphite chamber 1 or the carrier plate 4) within the reaction chamber 3 may be accidentally moved, requiring maintenance downtime. However, because this embodiment utilizes multiple exhaust assemblies 7 to symmetrically and evenly exhaust the reaction chamber 3 in multiple directions, the graphite components within the reaction chamber 3 are uniformly stressed in all directions. Therefore, even if the total exhaust volume is too large, this embodiment will not cause the graphite components to be accidentally moved, thereby effectively avoiding the need for maintenance downtime due to accidental movement of the graphite components, thereby effectively improving epitaxial growth efficiency. It should also be understood that because the prior art uses only one exhaust assembly 7 to exhaust the reaction chamber 3, while this embodiment uses multiple exhaust assemblies 7, this embodiment can achieve the same total exhaust volume as the existing exhaust assembly 7 even if the diameter of the exhaust assembly 7 is smaller than that of the existing exhaust assembly 7. Therefore, the diameter of the exhaust assembly 7 of this embodiment is preferably smaller than that of the existing exhaust assembly 7. Since the temperature field distribution uniformity of the area where the carrier plate 4 is located will affect the temperature uniformity of the epitaxial wafer, this embodiment preferably only divides the area where the carrier plate 4 is located in the reaction chamber 3 into horizontal areas. That is, this embodiment is equivalent to making the temperature measurement area only cover the area where the carrier plate 4 is located in the reaction chamber 3 and only arranging the air inlet unit 6 directly above the carrier plate 4 (refer to ). Figure 3 ), so as to reduce the number of the air intake units 6, thereby effectively reducing the production cost and use cost of the reaction gas intake assembly.

[0051] The controller 8 of this embodiment is electrically connected to the first temperature measurement component 5, the air intake unit 6, and the exhaust component 7, respectively. During the epitaxial growth process, the controller 8 of this embodiment can control the reaction gas intake component to supply reaction gas to the reaction chamber 3 and control all exhaust components 7 to exhaust gas synchronously. The controller 8 can also analyze whether there is a temperature measurement area with an abnormal temperature based on the actual temperature information and the preset target temperature. Specifically, the controller 8 can analyze whether the difference between the actual temperature information and the preset target temperature exceeds a second preset range to determine whether there is a temperature measurement area with an abnormal temperature. Because the heat exchange efficiency of the temperature measurement area changes when the air intake volume of the temperature measurement area changes, the embodiment can adjust the temperature of the temperature measurement area by adjusting the air intake volume of the air intake unit 6 corresponding to the temperature measurement area. Specifically, when there is a temperature measurement area with an abnormal temperature, the controller 8 of this embodiment can also obtain an air intake adjustment amount based on the deviation between the actual temperature information and the target temperature, and then adjust the air intake volume of the air intake unit 6 corresponding to the temperature measurement area with the abnormal temperature based on the air intake adjustment amount. Since adjusting the air intake volume of the air intake unit 6 corresponding to the temperature measurement area with the abnormal temperature based on the air intake adjustment amount will cause the reaction gas in the temperature measurement area with the abnormal temperature to change. The flow rate changes, thereby causing the uniformity of the gas flow field in the reaction chamber 3 to change. However, this embodiment can eliminate the effect of adjusting the intake volume of the air intake unit 6 corresponding to the temperature measurement area with the temperature anomaly on the uniformity of the gas flow field by adjusting the exhaust ratio of each exhaust assembly 7 according to the minimum distance between the temperature measurement area with the temperature anomaly and each exhaust assembly 7. Therefore, this embodiment is equivalent to making the temperature field distribution in the reaction chamber 3 uniform while not affecting the uniformity of the gas flow field in the reaction chamber 3, so as to make the temperature distribution of the epitaxial wafer uniform, thereby effectively avoiding the situation where the growth quality of the epitaxial layer is affected by the affected gas flow field uniformity. The specific process of adjusting the exhaust ratio of each exhaust assembly 7 according to the minimum distance between the temperature measurement area with the temperature anomaly and each exhaust assembly 7 in this embodiment can be as follows: calculating the minimum distance between the temperature measurement area with the temperature anomaly and each exhaust assembly 7; and normalizing all minimum distances to obtain the exhaust ratio corresponding to each exhaust assembly 7. Specifically, after the exhaust ratio of each exhaust assembly 7 is adjusted, the exhaust ratio of the exhaust assembly 7 close to the temperature measurement area with the temperature anomaly is greater than the exhaust ratio of the exhaust assembly 7 far from the temperature measurement area with the temperature anomaly. It should be understood that when the actual temperature information of the temperature measuring area is lower than the target temperature, this embodiment can increase the temperature of the temperature measuring area by reducing the air intake volume of the air intake unit 6 corresponding to the temperature measuring area, and when the actual temperature information of the temperature measuring area is higher than the target temperature, this embodiment can decrease the temperature of the temperature measuring area by increasing the air intake volume of the air intake unit 6 corresponding to the temperature measuring area, that is, when the actual temperature information of the temperature measuring area is lower than the target temperature, the air intake adjustment amount is a negative value, and when the actual temperature information of the temperature measuring area is higher than the target temperature, the air intake adjustment amount is a positive value.

[0052] The present application provides an epitaxial growth system that can achieve uniform temperature field distribution in the reaction chamber 3 without affecting the uniformity of the gas flow field in the reaction chamber 3 through the cooperation of the first temperature measurement component 5, the air intake unit 6 and the exhaust component 7. That is, the present application can achieve zoned temperature control of the epitaxial wafer by zoned temperature control of the reaction chamber 3 and achieve uniform temperature distribution of the epitaxial wafer by making the temperature field distribution in the reaction chamber 3 uniform. Therefore, the present application can effectively solve the problem of uneven temperature distribution of the epitaxial wafer due to the inability to zone temperature control the reaction chamber 3 when the temperature field distribution of the epitaxial wafer is uneven, and the problem of poor consistency in the growth quality of the epitaxial layer finally formed.

[0053] In some preferred embodiments, when the number of temperature measurement areas with abnormal temperature is one, the process of obtaining the intake air adjustment amount according to the deviation between the actual temperature information and the target temperature includes:

[0054] A1. Calculating a temperature deviation value based on actual temperature information corresponding to the temperature measurement area with abnormal temperature and a target temperature, and then obtaining an intake air adjustment amount based on the temperature deviation value and a first preset conversion relationship;

[0055] The controller 8 is further configured to, for each temperature measurement area with normal temperature, after adjusting the intake air volume of the intake unit 6 corresponding to the temperature measurement area with abnormal temperature according to the intake air adjustment amount, obtain a first temperature influence amount based on the intake air adjustment amount, the minimum distance between the intake air adjustment amount and the temperature measurement area with abnormal temperature, and a second preset conversion relationship; and obtain an intake air compensation amount based on the first temperature influence amount and a third preset conversion relationship;

[0056] The process of adjusting the air intake volume of the air intake unit 6 corresponding to the temperature measurement area with abnormal temperature according to the air intake adjustment amount includes:

[0057] The air intake volume of the air intake unit 6 corresponding to the temperature measurement area with abnormal temperature is adjusted according to the air intake adjustment amount, and the air intake volume of the air intake unit 6 corresponding to the temperature measurement area with normal temperature is adjusted according to the air intake compensation amount.

[0058] The first preset conversion relationship of this embodiment can be a pre-established calculation formula or a pre-established mapping table between temperature deviation values ​​and intake air adjustment values. Specifically, if the first preset conversion relationship is a pre-established mapping table between temperature deviation values ​​and intake air adjustment values, this embodiment can obtain the preliminary intake air adjustment value by querying the mapping table based on the temperature deviation value. The second preset conversion relationship of this embodiment can be a pre-established calculation formula or a mapping table between the intake air adjustment value, zone spacing, and temperature influence value. Specifically, if the second preset conversion relationship is a pre-established mapping table between the intake air adjustment value, zone spacing, and temperature influence value, this embodiment can obtain the first temperature influence value by querying the mapping table based on the intake air adjustment value and the minimum distance between a temperature measurement region with normal temperature and a temperature measurement region with abnormal temperature. The third preset conversion relationship of this embodiment can be a pre-established calculation formula or a mapping table between the temperature influence value and the intake air compensation value. Specifically, if the third preset conversion relationship is a mapping table between the temperature influence value and the intake air compensation value, this embodiment can obtain the intake air compensation value by querying the mapping table based on the first temperature compensation value. Since the reaction gas entering the reaction chamber 3 will diffuse to the surroundings, when the air intake volume of the air intake unit 6 corresponding to the temperature measuring area with abnormal temperature is adjusted according to the air intake adjustment amount, the air flow in the temperature measuring area with normal temperature will change to a certain extent. The change in air flow will cause the temperature in the temperature measuring area with normal temperature to change. In this embodiment, the influence of the air intake volume of the temperature measuring area with abnormal temperature on the temperature of the temperature measuring area with normal temperature can be quantified by obtaining the first temperature influence amount according to the air intake adjustment amount, the minimum distance between the temperature measuring area with abnormal temperature and the second preset conversion relationship, and ... The method of obtaining the air intake compensation amount and adjusting the air intake amount of the corresponding air intake unit according to the air intake compensation amount eliminates the influence of adjusting the air intake amount of the temperature measuring area with abnormal temperature on the temperature of the temperature measuring area with normal temperature. Therefore, this embodiment can effectively avoid the situation where the temperature measuring area with normal temperature is transformed into the temperature measuring area with abnormal temperature due to the influence of adjusting the air intake amount of the temperature measuring area with abnormal temperature on the temperature of the temperature measuring area with normal temperature. That is, this embodiment can effectively improve the accuracy and reliability of temperature regulation, thereby effectively improving the temperature field uniformity in the reaction chamber 3 and the temperature distribution uniformity of the epitaxial wafer, and further effectively improving the growth quality consistency of the epitaxial layer.

[0059] In some preferred embodiments, when there are multiple temperature measurement areas with abnormal temperatures, the process of obtaining the intake air adjustment amount according to the deviation between the actual temperature information and the target temperature includes:

[0060] B1. Selecting a temperature measurement area with a temperature anomaly that is the smallest distance from the axis of the carrier plate 4, calculating a temperature deviation value based on the actual temperature information corresponding to the selected temperature measurement area and the target temperature, and then obtaining an intake air adjustment amount based on the temperature deviation value and a first preset conversion relationship;

[0061] B2. Select the temperature abnormality measurement area with the smallest distance from the axis of the carrier plate 4 among the temperature abnormality measurement areas that have not been selected;

[0062] B3. Obtaining a second temperature influence value based on the intake air adjustment amount corresponding to the previously selected temperature measurement area with the temperature abnormality, the minimum distance between the previously selected temperature measurement area with the temperature abnormality and the current temperature measurement area with the temperature abnormality, and a fourth preset conversion relationship, and calculating a temperature deviation value based on the actual temperature information corresponding to the currently selected temperature measurement area and the target temperature;

[0063] B4. Analyze whether the second temperature influence value is the same as the temperature deviation value. If so, set the intake air adjustment amount corresponding to the currently selected temperature measurement area to 0 and execute step B6. If not, execute step B5.

[0064] B5. Calculating a total temperature deviation value based on the second temperature influence value and the temperature deviation value, and then obtaining an intake air adjustment amount based on the total temperature deviation value and a fifth preset conversion relationship;

[0065] B6, analyze whether there are still unselected abnormal temperature measurement area, and if so, returns to step B2, if not, proceed to step B7;

[0066] B7. For each temperature measurement area with normal temperature, obtain a first temperature influence variable corresponding to each temperature measurement area with abnormal temperature based on the intake air adjustment amount corresponding to each temperature measurement area with abnormal temperature, the minimum distance between the intake air adjustment amount and each temperature measurement area with abnormal temperature, and a second preset conversion relationship; and obtain an intake air compensation amount corresponding to each first temperature influence variable based on the first temperature influence amount and a third preset conversion relationship.

[0067] The process of adjusting the air intake volume of the air intake unit 6 corresponding to the temperature measurement area with abnormal temperature according to the air intake adjustment amount includes:

[0068] The air intake volume of the air intake unit 6 corresponding to the temperature measurement area with abnormal temperature is adjusted according to the air intake adjustment amount, and the air intake volume of the air intake unit 6 corresponding to the temperature measurement area with normal temperature is adjusted according to the air intake compensation amount.

[0069] This embodiment is equivalent to first calculating the intake air adjustment amount for the temperature measurement area with the smallest distance from the axis of the carrier plate 4 when there are multiple temperature anomalies. Then, it is analyzed whether the intake air adjustment amount still needs to be adjusted for the other temperature measurement areas with temperature anomalies under the influence of this intake air adjustment amount. If not, the intake air adjustment amount for the other temperature measurement areas with temperature anomalies is calculated by comprehensively considering the influence of the intake air adjustment amount and the deviation between the actual temperature information and the target temperature. Therefore, this embodiment can avoid the situation where the intake air adjustment amount for each temperature measurement area with temperature anomalies is determined solely based on the temperature deviation of each temperature measurement area with temperature anomalies, resulting in the intake air adjustment being performed on a temperature measurement area with temperature anomalies that does not require intake air adjustment under the influence of other intake air adjustment amounts, thereby causing the temperature of the temperature measurement area with temperature anomalies to remain abnormal. The fourth preset conversion relationship of this embodiment can be a pre-established calculation formula or a pre-established mapping relationship table between the intake air adjustment amount corresponding to the temperature measurement area with temperature anomalies, the minimum distance between two temperature measurement areas with temperature anomalies, and the temperature influence amount. The fifth preset conversion relationship of this embodiment can be a pre-established calculation formula or a mapping relationship table between temperature deviation values ​​and intake air adjustment amounts. It should be understood that when there are multiple selected temperature measurement areas with abnormal temperatures, step B3 first calculates the intake air adjustment amount for each selected temperature measurement area with abnormal temperatures and the temperature impact value of the minimum distance between the selected temperature measurement area with abnormal temperatures and the current temperature measurement area with abnormal temperatures on the currently selected temperature measurement area with abnormal temperatures, and then sums all the temperature impact values ​​as the second temperature impact value. It should be understood that this embodiment also requires calculating the intake air compensation amount for each temperature measurement area with normal temperatures. The process for calculating the intake air compensation amount in this embodiment is the same as that in the above embodiment and will not be discussed in detail here.

[0070] In some preferred embodiments, the air inlet unit 6 includes an air inlet channel 61 and an air outlet plate 62. The ends of the air inlet channel 61 are connected to a reactant gas supply assembly (not shown) and the air outlet plate 62, respectively. A first flow control assembly is provided on the air inlet channel 61 for regulating the flow of reactant gas, and a first air outlet hole 11 is provided at the center of the air outlet plate 62. In this embodiment, reactant gas is transported from the reactant gas supply assembly via the air inlet channel 61 to the air outlet plate 62, and then enters the corresponding temperature measurement area through the first air outlet hole 11. In other words, the first air outlet hole 11 serves to direct the reactant gas to a specific area within the reaction chamber 3. The first flow control assembly in this embodiment preferably includes a pneumatic valve 9 and a mass flowmeter 10. The pneumatic valve 9 has the advantages of fast response, high reliability, and high regulation accuracy, while the mass flowmeter 10 has the advantage of high measurement accuracy. Therefore, this embodiment can achieve high-precision regulation of the air intake to the temperature measurement area through the cooperation of the pneumatic valve 9 and the mass flowmeter 10.

[0071] In some preferred embodiments, the gas outlet plate 62 is further provided with a plurality of second gas outlet holes 12, which are arranged in a circumferential array outside the first gas outlet hole 11. Since the plurality of second gas outlet holes 12 are arranged in a circumferential array outside the first gas outlet hole 11 in this embodiment, that is, this embodiment is equivalent to converting the gas outlet mode from a single central gas outlet to a multi-point dispersed gas outlet, this embodiment can better and more evenly diffuse the reaction gas into the reaction chamber 3, thereby avoiding the occurrence of local gas concentrations that are too high or too low, thereby effectively improving the uniformity of the gas concentration distribution, and further effectively avoiding the situation where the growth quality of the epitaxial layer in different regions is inconsistent due to the affected gas concentration distribution uniformity. Preferably, the cross-sectional shape of the first gas outlet hole 11 and the second gas outlet hole 12 in this embodiment are both circular, and the diameter of the first gas outlet hole 11 is larger than the diameter of the second gas outlet hole 12.

[0072] In some preferred embodiments, the installation height of the air inlet of the exhaust assembly 7 is greater than the height of the bottom of the reaction chamber 3. Since the installation height of the air inlet of the exhaust assembly 7 of this embodiment is greater than the height of the bottom of the reaction chamber 3, this embodiment is equivalent to ensuring that the exhaust gas of the reaction chamber 3 is not discharged from the lowest point of the reaction chamber 3. Since graphite debris or dust may accumulate at the bottom of the reaction chamber 3, and this embodiment sets the installation height of the air inlet of the exhaust assembly 7 to be greater than the height of the bottom of the reaction chamber 3, this embodiment can effectively reduce the situation where the exhaust assembly 7 inhales graphite debris or dust, thereby effectively reducing the situation where the exhaust efficiency of the exhaust assembly 7 decreases due to the exhaust assembly 7 inhaling graphite debris or dust, and the exhaust assembly 7 is damaged or even destroyed, thereby effectively reducing the situation where the uniformity of the gas flow field in the reaction chamber 3 and the growth quality of the epitaxial layer are affected due to the decrease in the exhaust efficiency of some exhaust assemblies 7.

[0073] In some preferred embodiments, the epitaxial growth system further includes a rotating assembly 13, which is disposed on the lower half-moon graphite chamber 2 and is configured to drive the carrier plate 4 to rotate. The rotating assembly 13 of this embodiment can be an existing component for driving the carrier plate 4 to rotate. This embodiment can rotate the carrier plate 4 during the epitaxial growth process so that various regions of the epitaxial wafer periodically pass through different positions within the reaction chamber 3, thereby improving the uniformity of the temperature distribution of the epitaxial wafer and thereby effectively improving the consistency of the growth quality of the ultimately formed epitaxial layer.

[0074] In some preferred embodiments, the rotation assembly 13 includes a flotation channel 131 and a flotation gas supply assembly (not shown). The flotation channel 131 is disposed within the lower graphite meniscus cavity 2. The flotation channel 131 has a plurality of air outlets 132 located directly below the carrier plate 4 and arranged along the axis of the carrier plate 4. The air outlets 132 extend at an angle of 30°-60° with the bottom surface of the carrier plate 4. The air inlet of the flotation channel 131 is connected to the flotation gas supply assembly via a second flow control assembly. This embodiment is equivalent to driving the carrier plate 4 to float and rotate via air flotation rotation, thereby preventing rapid wear of the carrier plate 4 and the lower graphite meniscus cavity 2 and particle contamination caused by the carrier plate 4 maintaining contact with the lower graphite meniscus cavity 2 during rotation. In this embodiment, the rotational speed of the carrier plate 4 can be adjusted by controlling the second flow control assembly to adjust the flow rate of flotation gas entering the flotation channel 131. It should be understood that since this embodiment adopts the top air intake method to supply reaction gas into the reaction chamber 3, the reaction gas can provide a downward pressure for the carrier 4, and the downward pressure can suppress the displacement of the carrier 4 in the horizontal direction. Therefore, this embodiment can effectively reduce the situation where the carrier 4 is accidentally thrown out due to unstable air floating rotation, and the epitaxial wafer is accidentally damaged.

[0075] In some preferred embodiments, the epitaxial growth system further includes a second temperature measurement component (not shown in the figure), which is used to measure the cavity temperature information of the lower half of the graphite cavity 2. The controller 8 is also used to generate an alarm message when there is no temperature measurement area with abnormal temperature and the difference between the actual temperature information and the cavity temperature information exceeds the first preset range. The second temperature measurement component of this embodiment is preferably a pyrometer, which is disposed within the lower half-moon graphite cavity 2 and is used to measure the cavity temperature information of the lower half-moon graphite cavity 2. Since the reaction gas within the reaction chamber 3 exchanges heat with the lower half-moon graphite cavity 2, that is, when there is no temperature measurement area with abnormal temperature, the actual temperature information and the cavity temperature information should be the same or close (the difference between the actual temperature information and the cavity temperature information is outside the first preset range). Therefore, when there is no temperature measurement area with abnormal temperature and the difference between the actual temperature information and the cavity temperature information is outside the first preset range, it indicates that there may be a failure of the heating device, data drift of the first temperature measurement component 5 or the second temperature measurement component, or the overall thermal state of the epitaxial growth system (for example, a decrease in the thermal insulation performance of the insulation layer) may be affected. In this case, an alarm message needs to be generated to notify relevant personnel. In other words, this embodiment can promptly detect potential problems in the epitaxial growth system to improve the growth quality and reliability of epitaxial growth.

[0076] In some preferred embodiments, the epitaxial growth system further includes a confluence pipe 14 and an exhaust gas treatment component 15, the two ends of the confluence pipe 14 being connected to the gas outlets 132 of all exhaust components 7 and the exhaust gas treatment component 15, respectively, and a butterfly valve 16 being provided on the confluence pipe 14. One end of the confluence pipe 14 of this embodiment is connected to the gas outlets 132 of all exhaust components 7, that is, this embodiment is equivalent to using the confluence pipe 14 to collect the exhaust gases of different exhaust components 7 together. The exhaust gas treatment component of this embodiment can be an existing exhaust gas treatment component exhaust gas treatment component 15, which is used to treat the collected exhaust gas (for example, purify or decompose harmful components) to avoid direct exhaust gas discharge and environmental pollution. The butterfly valve 16 of this embodiment can be an existing butterfly valve 16, and this embodiment can adjust the flow rate of the exhaust gas in the confluence pipe 14 by adjusting the opening of the butterfly valve 16 to adjust the overall pressure and exhaust rate in the reaction chamber 3. It should be understood that since this embodiment utilizes multiple exhaust assemblies 7 to exhaust the reaction chamber 3, that is, when the total exhaust volume is the same, the exhaust volume of each exhaust assembly 7 of this embodiment is smaller than the exhaust volume of the exhaust assembly 7 of the prior art, and therefore this embodiment can cool the exhaust gas in the exhaust assembly 7 more fully, thereby effectively reducing the occurrence of chemical reactions of the reaction gas on the surface of the butterfly valve 16 due to insufficient cooling of the exhausted reaction gas, forming deposits on the surface of the butterfly valve 16, and reducing the service life of the butterfly valve 16.

[0077] From the above, it can be seen that the epitaxial growth system provided by the present application can achieve uniform temperature field distribution in the reaction chamber 3 without affecting the uniformity of the gas flow field in the reaction chamber 3 through the cooperation of the first temperature measurement component 5, the air intake unit 6 and the exhaust component 7. That is, the present application can achieve zoned temperature control of the epitaxial wafer by zoned temperature control of the reaction chamber 3 and make the temperature distribution of the epitaxial wafer uniform by making the temperature field distribution in the reaction chamber 3 uniform. Therefore, the present application can effectively solve the problem of uneven temperature distribution of the epitaxial wafer due to the inability to zone temperature control the reaction chamber 3 when the temperature field distribution of the epitaxial wafer is uneven, and the problem of poor consistency in the growth quality of the epitaxial layer finally formed.

[0078] Second, as Figure 5 As shown, the present application also provides an epitaxial growth method, which is applied to an epitaxial growth system provided in the first aspect above. The epitaxial growth method includes the following steps:

[0079] S1. During the epitaxial growth process, the reaction gas inlet assembly is controlled to supply reaction gas to the reaction chamber 3 and all exhaust assemblies 7 are controlled to exhaust gas synchronously, and whether there is a temperature measurement area with abnormal temperature based on the actual temperature information and the preset target temperature is analyzed;

[0080] S2. When there is a temperature measurement area with abnormal temperature, the intake adjustment amount is obtained according to the deviation value between the actual temperature information and the target temperature, and then the intake amount of the intake unit 6 corresponding to the temperature measurement area with abnormal temperature is adjusted according to the intake adjustment amount, and the exhaust ratio of each exhaust component 7 is adjusted according to the minimum distance between the temperature measurement area with abnormal temperature and each exhaust component 7.

[0081] An epitaxial growth method provided in the present application is applied to an epitaxial growth system provided in the first aspect above. The principle of an epitaxial growth method provided in this embodiment is the same as the principle of an epitaxial growth system provided in the first aspect above, and will not be discussed in detail here.

[0082] From the above, it can be seen that the epitaxial growth system and method provided by the present application can achieve uniform temperature field distribution in the reaction chamber 3 without affecting the uniformity of the gas flow field in the reaction chamber 3 through the cooperation of the first temperature measurement component 5, the air intake unit 6 and the exhaust component 7. That is, the present application can achieve zoned temperature control of the epitaxial wafer by zoned temperature control of the reaction chamber 3 and make the temperature distribution of the epitaxial wafer uniform by making the temperature field distribution in the reaction chamber 3 uniform. Therefore, the present application can effectively solve the problem of uneven temperature distribution of the epitaxial wafer due to the inability to zone temperature control the reaction chamber 3 when the temperature field distribution of the epitaxial wafer is uneven, and the problem of poor consistency in the growth quality of the epitaxial layer finally formed.

[0083] In the embodiments provided in the present application, it should be understood that, in this document, relational terms such as first and second, etc., are merely used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any actual relationship or order between these entities or operations.

[0084] The above description is merely an embodiment of the present application and is not intended to limit the scope of protection of the present application. For those skilled in the art, various modifications and variations of the present application are possible. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present application shall be included in the scope of protection of the present application.

Claims

1. An epitaxial growth system, characterized in that: The epitaxial growth system comprises: Upper half of the graphite cavity; The lower half-moon graphite cavity and the upper half-moon graphite cavity form a reaction cavity, and the reaction cavity is horizontally divided into multiple temperature measurement areas; A carrier plate, located in the reaction chamber, for carrying the epitaxial wafer; a first temperature measurement component, disposed outside the reaction chamber, for measuring actual temperature information corresponding to each of the temperature measurement areas; A reaction gas intake assembly is provided on the upper half-moon graphite cavity, comprising a plurality of intake units, wherein each temperature measurement area corresponds to at least one intake unit that discharges gas vertically downward; A plurality of exhaust components are symmetrically arranged on both sides of the reaction chamber; The controller is used to control the reaction gas intake assembly to supply reaction gas to the reaction chamber and control all the exhaust assemblies to exhaust synchronously during the epitaxial growth process, and analyze whether there is a temperature measurement area with abnormal temperature based on the actual temperature information and the preset target temperature. It is also used to obtain the intake adjustment amount based on the deviation value between the actual temperature information and the target temperature when there is a temperature measurement area with abnormal temperature, and then adjust the intake amount of the intake unit corresponding to the temperature measurement area with abnormal temperature based on the intake adjustment amount, and adjust the exhaust ratio of each exhaust assembly based on the minimum distance between the temperature measurement area with abnormal temperature and each exhaust assembly.

2. The epitaxial growth system according to claim 1, wherein: When the number of the temperature measurement area with abnormal temperature is one, the process of obtaining the intake air adjustment amount according to the deviation value between the actual temperature information and the target temperature includes: A1. Calculating a temperature deviation value based on actual temperature information corresponding to the temperature measurement area with abnormal temperature and a target temperature, and then obtaining an intake air adjustment amount based on the temperature deviation value and a first preset conversion relationship; The controller is further configured to, for each temperature measurement area with normal temperature, obtain a first temperature influence amount based on the intake air adjustment amount, the minimum distance between the intake air adjustment amount and the temperature measurement area with abnormal temperature, and a second preset conversion relationship, and obtain an intake air compensation amount based on the first temperature influence amount and a third preset conversion relationship; The process of adjusting the air intake volume of the air intake unit corresponding to the temperature measurement area with abnormal temperature according to the air intake adjustment amount includes: The air intake volume of the air intake unit corresponding to the temperature measurement area with abnormal temperature is adjusted according to the air intake adjustment amount, and the air intake volume of the air intake unit corresponding to the temperature measurement area with normal temperature is adjusted according to the air intake compensation amount.

3. The epitaxial growth system according to claim 1, wherein: The air intake unit includes an air intake channel and an air outlet plate. The two ends of the air intake channel are respectively connected to the reaction gas supply component and the air outlet plate. The air intake channel is provided with a first flow regulating component for regulating the flow of the reaction gas. The center of the air outlet plate is provided with a first air outlet.

4. The epitaxial growth system according to claim 3, characterized in that: The air outlet plate is further provided with a plurality of second air outlet holes, and the plurality of second air outlet holes are arranged in a circular array outside the first air outlet holes.

5. The epitaxial growth system according to claim 1, wherein: The installation height of the air inlet of the exhaust assembly is greater than the height of the bottom of the reaction chamber.

6. The epitaxial growth system according to claim 5, characterized in that The epitaxial growth system further includes a rotating assembly, which is disposed on the lower half-moon graphite cavity and is used to drive the carrier to rotate.

7. The epitaxial growth system according to claim 6, characterized in that: The rotating assembly includes a flotation channel and a flotation gas supply assembly. The flotation channel is arranged in the lower semi-lunar graphite cavity. The flotation channel has multiple air outlets located directly below the carrier and arranged along the axial circumference of the carrier. The extension direction of the air outlet makes an angle of 30°-60° with the bottom surface of the carrier. The air inlet of the flotation channel is connected to the flotation gas supply assembly through a second flow regulating assembly.

8. The epitaxial growth system according to claim 1, wherein: The epitaxial growth system also includes a second temperature measurement component, which is used to measure the cavity temperature information of the lower half of the graphite cavity. The controller is also used to generate an alarm message when there is no temperature measurement area with temperature abnormality and the difference between the actual temperature information and the cavity temperature information exceeds a first preset range.

9. The epitaxial growth system according to claim 1, wherein: The epitaxial growth system further includes a converging pipe and an exhaust gas treatment component. Both ends of the converging pipe are respectively connected to the gas outlets of all the exhaust components and the exhaust gas treatment component. A butterfly valve is provided on the converging pipe.

10. An epitaxial growth method, characterized in that: Applied in the epitaxial growth system according to any one of claims 1 to 9, the epitaxial growth method comprises the following steps: S1. During the epitaxial growth process, controlling the reaction gas inlet assembly to supply reaction gas to the reaction chamber and controlling all the exhaust assemblies to exhaust gas synchronously, and analyzing whether there is a temperature measurement area with abnormal temperature based on the actual temperature information and the preset target temperature; S2. When there is a temperature measurement area with abnormal temperature, the intake adjustment amount is obtained according to the deviation value between the actual temperature information and the target temperature, and then the intake amount of the intake unit corresponding to the temperature measurement area with abnormal temperature is adjusted according to the intake adjustment amount, and the exhaust ratio of each exhaust component is adjusted according to the minimum distance between the temperature measurement area with abnormal temperature and each exhaust component.

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