Deep red light source preparation method and high-fitting-degree full-spectrum light-emitting device

Abstract

The invention provides a deep red light source preparation method and a high-fitting-degree full-spectrum luminescent device, and the method comprises the steps: selecting a purple light chip with a wave band range of 380-420 nm, and fixedly welding the purple light chip on a support bowl cup; the low-refractive-index glue and dark red light fluorescent powder are uniformly mixed to obtain mixed glue, the mixed glue is uniformly dispensed over the purple light chip, then the purple light chip is placed in a drying oven to be dried, and a dark red light source excited by purple light is obtained; a deep red light source is mixed with a conventional white light full-spectrum light source to obtain a full-spectrum light source with a high fitting degree. According to the invention, the dark red light source excited by the purple light chip is mixed with the conventional white light full-spectrum lamp bead, so that a full-spectrum light source with high fitting degree with a sun-like standard spectrum can be obtained.

Description

Technical Field

[0001] The present invention relates to the technical field of LED lighting, and particularly relates to a method for preparing a deep red light source and a full-spectrum light-emitting device with high fitting degree. Background Art

[0002] A full-spectrum light source is a light source that simulates the solar spectrum. Different wavelengths of light are emitted by multiple LEDs, and then through optical adjustment and optimization, a spectral output similar to the solar spectrum is achieved. The full spectrum includes the spectral curves of ultraviolet light, visible light, and infrared light, and the ratio of red, green, and blue in the visible light part is approximately the same as that of sunlight, and the color rendering index is close to 100. Due to its advantages such as high color rendering, soft and comfortable light, healthy lighting, energy conservation and environmental protection, the full-spectrum light source has been widely used in many fields and shows great market potential.

[0003] In the prior art, to achieve a full-spectrum light source, a blue chip is mostly used to excite phosphors in each band to achieve a solar-like spectrum. However, at present, there is still a large lack in the spectrum corresponding to the visible light part of the deep infrared light of 680 - 780 nm. Patent CN118231549A discloses a full-spectrum light source, its manufacturing method and application, which uses a mixed-band chip of 410 nm - 420 nm, 430 nm - 440 nm, and 445 nm - 460 nm, and a phosphor combination is compounded to complete the spectrum in the band of 400 nm - 440 nm. However, the spectral intensity in the range of 680 nm - 780 nm is still relatively lacking. Patent CN110285389A discloses a full-spectrum LED light source and an LED lamp containing the light source, which uses a violet full-spectrum lamp bead and a monochromatic far-red lamp bead. The violet full-spectrum lamp bead uses a violet chip to excite blue, green, and red phosphors, and the monochromatic far-infrared lamp bead uses a blue chip and a red chip to excite phosphors of 670 nm - 680 nm. However, there is still much room for improvement: firstly, the blue phosphor is unstable, and there is a problem of fast light decay after being excited by violet light; secondly, the far-infrared lamp bead uses a blue chip to excite the phosphor, and the blue peak cannot be completely absorbed, and the blue light energy will be increased after superposition; thirdly, the far-infrared lamp bead uses a red chip, the emission spectrum has a narrow half-wave width, and the cost of the red chip is relatively high. Patent CN118867090A discloses a deep red light-emitting device, which uses a blue chip and a red chip to excite red and deep red phosphors to emit a spectral peak of 630 nm - 830 nm. However, the relative power of the full-spectrum light source obtained by this method in the band of 680 nm - 780 nm < 0.35, and the relative spectrum still has a low fitting degree with the solar spectrum. Moreover, this light-emitting device still involves using a red chip to emit light to supplement the deep red light spectrum part, corresponding to high cost and a narrow spectral peak. Summary of the Invention

[0004] Based on this, the objective of the present invention is to provide a method for preparing a deep red light source and a high-fitting full-spectrum light-emitting device to solve the deficiencies in the above-mentioned prior art.

[0005] In the first aspect, the present invention provides a method for preparing a deep red light source, and the method includes: Select a violet chip with a wavelength band range of 380 nm to 420 nm, and fixedly solder the violet chip on a bracket cup; Uniformly mix a low-refractive-index glue and a deep red light phosphor to obtain a mixed glue, and uniformly dot the mixed glue directly above the violet chip to obtain a lamp bead after dotting glue; Place the lamp bead after dotting glue in an oven for drying to obtain a deep red light source excited by violet light; Mix the deep red light source with a conventional white light full-spectrum light source lamp bead to obtain a high-fitting full-spectrum light source.

[0006] Compared with the prior art, the beneficial effects of the present invention are: through a violet chip with a wavelength band range of 380 nm to 420 nm, a low-refractive-index glue, and a deep red light phosphor, and by exciting the deep red light phosphor with the violet chip, a continuous spectrum with a relatively high power can be obtained to obtain a deep red light source, and the production cost can be effectively reduced, and the problem of a narrow spectral peak can be avoided. Mixing the deep red light source excited by the violet chip with a conventional white light full-spectrum lamp bead can obtain a high-fitting full-spectrum light source.

[0007] Further, the number of the violet chips is greater than or equal to one.

[0008] Further, there are two violet chips, the wavelength band range of one of the violet chips is 390 nm to 395 nm, and the wavelength band range of the other violet chip is 410 nm to 415 nm.

[0009] Further, there are two violet chips, the wavelength band range of one of the violet chips is 400 nm to 405 nm, and the wavelength band range of the other violet chip is 415 nm to 420 nm.

[0010] Further, the peak wavelength band of the deep red light phosphor is 660 nm to 795 nm, and the relative power of the deep red light source corresponding to the 780 nm wavelength band is greater than or equal to 0.4.

[0011] Further, the ratio of the low-refractive-index glue to the deep red light phosphor is 1:0.5 to 2.5.

[0012] Further, there are two groups of the deep red light phosphor.

[0013] Further, the peak wavelength band of one group of the deep red phosphor is 670 nm, and the peak wavelength band of the other group of the deep red phosphor is 750 nm.

[0014] Further, the peak wavelength band of one group of the deep red phosphor is 693 nm, and the peak wavelength band of the other group of the deep red phosphor is 750 nm.

[0015] In a second aspect, the present invention also provides a high-fitting full-spectrum light-emitting device prepared by the above method for preparing a deep red light source. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 is a flowchart of the method for preparing a deep red light source in the first embodiment of the present invention; Figure 2 is the relative spectral diagram of the deep red light source in the first embodiment of the present invention; Figure 3 is the relative spectral diagram of the mixed light of the deep red light source at 4000K in the first embodiment of the present invention; Figure 4 is the relative spectral diagram of the deep red light source in the second embodiment of the present invention; Figure 5 is the relative spectral diagram of the mixed light of the deep red light source at 6500K in the first embodiment of the present invention.

[0017] The following specific embodiments will further illustrate the present invention in conjunction with the above drawings. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0018] For the convenience of understanding the present invention, the present invention will be described more comprehensively below with reference to the relevant drawings. Several embodiments of the present invention are given in the drawings. However, the present invention can be implemented in many different forms and is not limited to the embodiments described herein. On the contrary, these embodiments are provided to make the disclosure of the present invention more thorough and comprehensive.

[0019] It should be noted that when an element is referred to as being "fixed to" another element, it can be directly on the other element or there may also be an intermediate element. When an element is considered to be "connected" to another element, it can be directly connected to the other element or there may be an intermediate element at the same time. The terms "vertical", "horizontal", "left", "right" and similar expressions used herein are for illustrative purposes only.

[0020] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the technical field to which this invention belongs. The terms used in the specification of this invention are for the purpose of describing specific embodiments only and are not intended to limit the invention. The term "and / or" used herein includes any and all combinations of one or more of the related listed items.

[0021] Embodiment 1 Please refer to Figure 1 , which shows the method for preparing a deep red light source in the first embodiment of the present invention. The method includes steps S1 to S4: S1. Select a violet chip with a wavelength band range of 380 nm to 420 nm, and fixedly weld the violet chip on the bracket cup; Specifically, in this embodiment, there are two violet chips. One of the violet chips has a wavelength band range of 390 nm to 395 nm, and the other violet chip has a wavelength band range of 410 nm to 415 nm.

[0022] It should be explained that the two violet chips are connected in series and welded on the bracket cup through alloy wires.

[0023] S2. Uniformly mix a low refractive index glue and a deep red light fluorescent powder to obtain a mixed glue, and uniformly dot the mixed glue directly above the violet chip to obtain a lamp bead after dotting glue; It should be noted that the peak wavelength band of the deep red fluorescent powder is 660 nm to 795 nm. Specifically, in this embodiment, there are two groups of deep red light fluorescent powders. One group of the deep red light fluorescent powders has a peak wavelength of 670 nm, and the other group of the deep red light fluorescent powders has a peak wavelength of 750 nm.

[0024] It can be understood that red powder R1 with a peak wavelength of 693 nm band and red powder R2 with a peak wavelength of 750 nm band are selected. The mass ratio of R1 to R2 is: R1:R2 = 3:1. A low refractive index outer encapsulating glue is selected, and the mass ratio of the mixed glue to the fluorescent powder is 0.5. The fluorescent powder and the glue are fully mixed evenly to obtain a uniformly composed mixed glue; and when dotting the mixed glue directly above the violet chip, it is necessary to ensure that the mixed glue does not overflow the bracket cup.

[0025] S3. Place the lamp bead after dotting glue in an oven for drying to obtain a deep red light source excited by violet light; It should be explained that a deep red light source excited by violet light can be obtained after baking the bracket after dotting glue. Specifically, as Figure 2 shown, it is the relative spectral diagram of the deep red light source. From Figure 2It can be seen that the deep red light source is relatively full in the visible light spectrum of 660nm~780nm, among which the relative power at 780nm is greater than 55%, and the peak wavelength is 721nm.

[0026] S4, mixing the deep red light source with conventional white light full-spectrum light source lamp beads to obtain a full-spectrum light source with a high degree of fit; It should be explained that a full-spectrum light source can be obtained by mixing a deep red light source with a conventional white light full-spectrum light source, as shown in the following example: Figure 3 As shown, this is a 4000K light source spectrum. Figure 3 The middle curve is a standard solar spectrum curve. The spectrum of the light source is continuous and the GFC fitting degree with the solar standard spectrum is as high as 0.9989, especially in the deep red light part of the 660nm~780nm band, the spectrum is full, which can further enrich the rhythmic function of the light source compared with the conventional white light full spectrum.

[0027] Embodiment 2 The difference between the method for preparing a deep red light source in this embodiment and the method in the first embodiment is that: S1, selecting a purple light chip with a wavelength range of 380nm~420nm, and soldering the purple light chip to the bracket bowl; Specifically, in this embodiment, there are two purple light chips, one of which has a wavelength range of 400nm~405nm, and the other purple light chip has a wavelength range of 415nm~420nm.

[0028] It needs to be explained that the two Ziguang chips are welded in series on the bracket bowl through alloy wire.

[0029] S2, uniformly mixing low refractive index glue and deep red phosphor to obtain mixed glue, and uniformly applying the mixed glue just above the purple light chip to obtain a glued lamp bead; It should be noted that the peak band of the deep red phosphor is 660nm~795nm. Specifically, in this embodiment, the deep red phosphor is divided into two groups, one group of deep red phosphor has a peak band of 693nm, and the other group of deep red phosphor has a peak band of 750nm.

[0030] It can be understood that red powder R1 with a peak wavelength of 670nm and red powder R2 with a peak wavelength of 750nm are selected, the mass ratio of R1 to R2 is: R1:R2=1:5, and a low-refractive index external sealing glue is selected. The mass ratio of the mixed glue and the phosphor is 0.83. The phosphor and glue are fully mixed to obtain a mixed glue with uniform composition.

[0031] S3. Place the dispensed lamp beads in an oven for drying to obtain a deep red light source excited by ultraviolet light. It should be noted that a deep red light source excited by ultraviolet light can be obtained after baking the dispensed brackets. Specifically, as Figure 4 shown, it is the relative spectral diagram of the deep red light source. It can be seen from Figure 4 that there are light peaks in the spectral band of 620 nm to 780 nm. Especially in the visible light spectrum of 660 nm to 780 nm, it is relatively full. Among them, the relative power at 780 nm > 60%, and the peak wavelength is 729 nm.

[0032] S4. Mix the deep red light source and the lamp beads of the conventional white light full-spectrum light source to obtain a full-spectrum light source with high fitting degree. It should be noted that by mixing the deep red light source and the conventional white light full-spectrum light source, a full-spectrum light source can be obtained. Specifically, as Figure 5 shown, it is the spectrum diagram of the 6500K light source. Figure 5 The curve in it is the standard solar-like spectral curve. The spectrum of the light source is continuous and the fitting degree GFC with the solar-like standard spectrum is as high as 0.9916. Especially in the deep red light part of the spectral band of 660 nm to 780 nm, the spectrum is full. Compared with the conventional white light full-spectrum, the rhythm function of the light source can be further enriched.

[0033] The present invention also provides a full-spectrum light-emitting device with high fitting degree, which is prepared by the method for preparing a deep red light source in the above embodiment.

[0034] In summary, for the method for preparing a deep red light source in the above embodiment of the present invention, through an ultraviolet chip with a wavelength range of 380 nm to 420 nm, a low refractive index glue, and a deep red light phosphor, and by exciting the deep red light phosphor of 660 nm to 780 nm with the ultraviolet chip, a continuous spectrum with a relatively high relative power in the range of 660 nm to 780 nm can be obtained to obtain a deep red light source. By mixing the deep red light source excited by the ultraviolet chip with the lamp beads of the conventional white light full-spectrum, a full-spectrum light source with high fitting degree can be obtained.

[0035] In the description of this specification, the descriptions with reference to the terms "one embodiment", "some embodiments", "example", "specific example", or "some examples", etc. mean that the specific features, structures, materials, or characteristics described in connection with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials, or characteristics described can be combined in any one or more embodiments or examples in a suitable manner.

[0036] The above-described embodiments merely represent several implementation manners of the present invention. The description is relatively specific and detailed, but it should not be construed as a limitation on the scope of the patent for the present invention. It should be noted that for those of ordinary skill in the art, without departing from the concept of the present invention, several modifications and improvements can still be made, and these all fall within the protection scope of the present invention. Therefore, the protection scope of the patent for the present invention shall be subject to the appended claims.

Claims

1. A method for preparing a deep red light source, characterized in that, The method includes: Select a violet chip with a wavelength band range of 380nm - 420nm, and fixedly solder the violet chip on the bracket cup; Uniformly mix a low refractive index glue and a deep red light phosphor to obtain a mixed glue, and uniformly dot the mixed glue directly above the violet chip to obtain a bead with glue applied; Place the bead with glue applied in an oven for drying to obtain a deep red light source excited by violet light; Mix the deep red light source with a conventional white light full - spectrum light source bead to obtain a full - spectrum light source with high fitting degree.

2. The method for preparing a deep red light source according to claim 1, wherein, The number of the violet chips is greater than or equal to one.

3. The method for preparing a deep red light source according to claim 2, wherein There are two violet chips. One of the violet chips has a wavelength band range of 390nm - 395nm, and the other violet chip has a wavelength band range of 410nm - 415nm.

4. The method for preparing a deep red light source according to claim 2, wherein There are two violet chips. One of the violet chips has a wavelength band range of 400nm - 405nm, and the other violet chip has a wavelength band range of 415nm - 420nm.

5. The method for preparing a deep red light source according to claim 1, characterized in that, The peak wavelength band of the deep red light phosphor is 660nm - 795nm, and the relative power corresponding to the 780nm wavelength band of the deep red light source is greater than or equal to 0.

4.

6. The method for preparing a deep red light source according to claim 1, wherein The ratio of the low refractive index glue to the deep red light phosphor is 1:0.5 - 1:2.

5.

7. The method for preparing a deep red light source according to claim 1, wherein The deep red light phosphor is in two groups.

8. The method for preparing a deep red light source according to claim 7, wherein One group of the deep red light phosphor has a peak wavelength band of 670nm, and the other group of the deep red light phosphor has a peak wavelength band of 750nm.

9. The method for preparing a deep red light source according to claim 7, wherein One group of the deep red light phosphor has a peak wavelength band of 693nm, and the other group of the deep red light phosphor has a peak wavelength band of 750nm.

10. A full-spectrum light-emitting device with high fitting degree, characterized in that, Prepared by the preparation method of the deep red light source according to any one of claims 1 - 9.

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