Substrate processing apparatus and substrate processing method

Abstract

A substrate processing apparatus includes: a processing chamber including a processing space; a substrate support accommodating a substrate in the processing chamber and supporting the substrate; a fluid supply tube disposed at a lower portion of the processing chamber; and a fluid supply device that supplies a processing fluid to the processing space through a fluid supply pipe. The processing chamber includes a stepped portion and a rounded portion both in an upper surface defining the processing space, and a first horizontal separation distance from a center of the processing chamber to the stepped portion is greater than a second horizontal separation distance from the center of the processing chamber to an edge of the substrate.

Description

Cross - reference to related applications

[0001] This application is based on and claims priority to Korean Patent Application No. 10 - 2024 - 0007632, filed with the Korean Intellectual Property Office on January 17, 2024, the disclosure of which is incorporated herein by reference in its entirety. Technical field

[0002] An apparatus and method consistent with the present disclosure relate to a substrate processing apparatus and a substrate processing method, and more particularly, to a substrate processing apparatus and a substrate processing method using a supercritical fluid. Background art

[0003] As semiconductor devices are required to be refined, an extreme ultraviolet (EUV) lithography method using an extremely short wavelength has been proposed. By using EUV lithography, a photoresist pattern with a small horizontal dimension and a high aspect ratio can be formed. In order to reduce the dropping or collapse of the photoresist pattern during the formation of a fine photoresist pattern, a drying process using a supercritical fluid is being used, but there are still problems that need to be improved. Summary of the invention

[0004] One aspect provides a substrate processing apparatus that can improve the uniformity of substrate processing by preventing the tilting of fine patterns at the edge of the substrate.

[0005] According to one aspect of one or more embodiments, there is provided a substrate processing apparatus including: a processing chamber including a processing space; a substrate support configured to accommodate and support a substrate in the processing chamber; a fluid supply pipe disposed in a lower portion of the processing chamber; and a fluid supply device configured to supply a processing fluid to the processing space through the fluid supply pipe. The processing chamber includes a stepped portion and a circular portion in an upper surface defining the processing space, and a first horizontal separation distance from the center of the processing chamber to the stepped portion is greater than a second horizontal separation distance from the center of the processing chamber to the edge of the substrate.

[0006] According to another aspect of one or more embodiments, there is provided a substrate processing apparatus including: a processing chamber including a processing space; a substrate support configured to accommodate and support a substrate in the processing chamber; a fluid supply pipe disposed in a lower portion of the processing chamber; and a fluid supply device configured to supply a processing fluid to the processing space through the fluid supply pipe. The processing chamber includes a stepped portion and a circular portion on an upper surface defining the processing space, and the stepped portion is vertically aligned with the edge of the substrate.

[0007] According to another aspect of one or more embodiments, a substrate processing method is provided, including: loading a substrate into a processing space of a processing chamber; supplying a processing fluid into the processing chamber through at least one of a first supply pipe provided on a bottom wall of the processing chamber or a second supply pipe provided on an upper wall of the processing chamber; and discharging the processing fluid in the processing chamber through a discharge pipe provided on the bottom wall of the processing chamber. The processing chamber includes an upper processing chamber and a lower processing chamber, and wherein, the upper processing chamber includes a stepped portion and a circular portion. Description of the Drawings

[0008] Various embodiments will be more clearly understood from the following detailed description taken in conjunction with the accompanying drawings, in which:

[0009] Figure 1 is a cross-sectional view of a substrate processing apparatus according to an embodiment;

[0010] Figure 2 is Figure 1 an enlarged cross-sectional view of region A in

[0011] Figure 3 is a cross-sectional view of a substrate processing apparatus according to an embodiment;

[0012] Figure 4 is a cross-sectional view of a substrate processing apparatus according to an embodiment;

[0013] Figure 5 is a configuration diagram of a fluid supply device of a substrate processing apparatus according to an embodiment;

[0014] Figure 6 and Figure 7 is a simulation diagram showing the flow rate of a processing fluid in an experimental example of a substrate processing apparatus according to an embodiment; and Figure 8 is a simulation diagram of the flow rate of a processing fluid in a comparative example according to the related art;

[0015] Figure 9 and Figure 10 is a simulation diagram showing the direction of a particle blocking flow in an experimental example of a substrate processing apparatus according to an embodiment; and Figure 11 is a simulation diagram of the direction of a particle blocking flow in a comparative example according to the related art;

[0016] Figures 12 to 14 is a simulation diagram of the flow rate of a processing fluid in a comparative example according to the related art;

[0017] Figure 15 is a flowchart of a substrate processing method according to an embodiment;

[0018] Figure 16is a graph showing the change in pressure inside the processing chamber while performing substrate processing according to an embodiment;

[0019] Figure 17 is a plan view of the overall layout of a substrate processing apparatus according to an embodiment;

[0020] Figure 18 is a flowchart of a fine pattern forming method using a substrate processing apparatus according to an embodiment; and

[0021] Figures 19 to 21 is for explaining according to the processing sequence Figure 18 of the cross-sectional view of the fine pattern forming method. DETAILED DESCRIPTION

[0022] Hereinafter, various embodiments will be described in detail with reference to the accompanying drawings. In the drawings, the same reference numerals are used for the same components, and their repeated description will be omitted for the sake of brevity. In the following drawings, for the convenience and clarity of description, the thickness or size of each layer is exaggerated and may therefore be different from the actual shape or ratio. As used in this specification, the phrase "at least one of A or B" includes within its scope "only A", "only B", and "A and B".

[0023] Figure 1 is a cross-sectional view of a substrate processing apparatus 10 according to an embodiment, and Figure 2 is Figure 1 an enlarged cross-sectional view of region A in

[0024] Referring to Figure 1 and Figure 2 , the substrate processing apparatus 10 may include a processing chamber 110, a substrate support 120, a fluid supply device 130, a first supply pipe 140, a second supply pipe 150, a discharge pipe 160, and a discharge device 170.

[0025] The processing chamber 110 may provide a processing space PS for processing the substrate WF. While the substrate WF is being processed, the processing chamber 110 may seal the processing space PS from the outside. The processing space PS may be defined by the lower surface 111, the upper surface 113, and the side surface 115 inside the processing chamber 110. In other words, the processing space PS may be defined by a lower wall 110LW including the lower surface 111 of the processing chamber 110, an upper wall 110UW including the upper surface 113 of the processing chamber 110, and a side wall 110SW defining the side surface 115 of the processing chamber 110.

[0026] In some embodiments, the processing space PS may have a shape that is symmetric with respect to the central axis CAX of the processing chamber 110. For example, in an embodiment, the processing space PS may have a rotationally symmetric shape with respect to the central axis CAX of the processing chamber 110. For example, the processing chamber 110 and the processing space PS may have a shape that is symmetric or mirror-imaged with respect to an arbitrary reference plane. In some embodiments, the processing chamber 110 and the processing space PS may not have a symmetric shape. In some embodiments, the upper body 110U of the processing chamber 110 may have a shape that is symmetric with respect to the central axis CAX of the processing chamber 110.

[0027] In some embodiments, the processing chamber 110 may include a lower body 110L and an upper body 110U. The upper body 110U may be disposed on the lower body 110L. Each of the upper body 110U and the lower body 110L may include, for example, a metallic material. The upper body 110U may be coupled to the lower body 110L to cover the space provided by the lower body 110L. The upper body 110U and the lower body 110L may be switched between a closed position for sealing the processing space PS and an open position for opening the processing space PS to the atmosphere outside the processing chamber 110.

[0028] In the closed position of the processing chamber 110, the upper body 110U may be coupled to the lower body 110L to seal the processing space PS. In the open position of the processing chamber 110, the upper body 110U may be separated from the lower body 110L, and the processing space PS may be opened to the atmosphere outside the processing chamber 110. The switching between the closed position and the open position of the processing chamber 110 may be achieved by using a lifting device (not shown) configured to move the upper body 110U in a vertical direction (Z direction) with respect to the lower body 110L.

[0029] In all of the drawings except Figure 17 the direction parallel to the main surface of the substrate WF is defined as the horizontal direction (X direction and / or Y direction), and the direction perpendicular to the horizontal direction (X direction and / or Y direction) is defined as the vertical direction (Z direction).

[0030] The upper body 110U may include a stepped portion 110S and a circular portion 110R on the lower surface of the upper body 110U. That is to say, the stepped portion 110S and the circular portion 110R may be formed on the upper surface 113 of the processing chamber 110. In other words, the processing chamber 110 may include the stepped portion 110S and the circular portion 110R on the upper surface of the processing space PS. The stepped portion 110S may be formed by being recessed in the upward vertical direction (+Z direction) on the upper surface 113 inside the processing chamber 110. In other words, the stepped portion 110S may be vertically recessed into the upper body 110U. The stepped portion 110S and the circular portion 110R may be in contact with each other. The horizontal separation distance from the center of the substrate WF to the stepped portion 110S may be less than the horizontal separation distance from the center of the substrate WF to the circular portion 110R. In other words, the horizontal separation distance from the center of the processing chamber 110 to the stepped portion 110S may be less than the horizontal separation distance from the center of the processing chamber 110 to the circular portion 110R. The vertical height of the circular portion 110R may decrease away from the center of the substrate WF. In other words, the vertical height of the circular portion 110R may decrease away from the center of the processing chamber 110.

[0031] The flow rate of the processing fluid PF and the flow rate distribution of the processing fluid PF on the substrate WF may be reduced by the stepped portion 110S of the substrate processing apparatus 10. A detailed description thereof will be given below. The size of the dead zone where the particles introduced from the outside of the processing chamber 110 maintain their positions may be reduced by the circular portion 110R of the substrate processing apparatus 10. A detailed description thereof will be given below.

[0032] The stepped portion 110S may form a certain angle θ with the upper surface 113 inside the processing chamber 110. For example, in an embodiment, the angle θ of the stepped portion 110S may be about 90°.

[0033] The horizontal separation distance from the central axis CAX to the edge of the substrate WF may be less than the horizontal separation distance from the central axis CAX to the stepped portion 110S. In other words, the horizontal separation distance from the edge of the substrate WF to the side surface 115 of the processing chamber 110 may be greater than the horizontal separation distance from the stepped portion 110S to the side surface 115 of the processing chamber 110.

[0034] A first distance D1 as the horizontal distance from the edge of the substrate WF to the side surface 115 of the processing chamber 110 may be greater than a second distance D2 as the horizontal distance from the edge of the substrate WF to the stepped portion 110S. The second distance D2 may be about 2 / 3 or less of the first distance D1.

[0035] The upper surface of the substrate WF and the upper surface 113 of the processing chamber 110 may be spaced apart from each other by a third distance D3 in the vertical direction (Z direction). For example, in an embodiment, the third distance D3 may be from about 2 mm to about 10 mm. For example, in an embodiment, when the processing fluid PF is carbon dioxide (CO2) and the fraction of the processing fluid PF is about 0.96, the third distance D3 may be about 4 mm or greater. The third distance D3 may vary according to the type of the processing fluid PF and the fraction of the processing fluid PF.

[0036] The substrate support 120 may be disposed in the processing space PS and may support the substrate WF. The substrate support 120 may support the substrate WF such that the upper surface of the substrate WF faces the upper surface 113 of the processing chamber 110 and the lower surface of the substrate WF faces the lower surface 111 of the processing chamber 110. The upper surface of the substrate WF may include a surface to be processed by using the substrate processing apparatus 10. The substrate support 120 may be coupled to the lower wall 110LW of the processing chamber 110.

[0037] The substrate support 120 may have a shape corresponding to the substrate WF. For example, in some embodiments, the shape may be a disk shape. The substrate support 120 may include, for example, a metallic material or a ceramic material. For example, the substrate support 120 may include a baffle plate. The substrate support 120 may be supported by support posts on the lower surface 111 of the processing chamber 110 and may be spaced apart from the lower surface 111 of the processing chamber 110 by a preset distance. The substrate support 120 may be disposed on the lower surface 111 of the processing chamber 110 to cover the first supply pipe 140 and the discharge pipe 160.

[0038] The substrate support 120 may be disposed between the first supply pipe 140 and the substrate WF and may adjust the flow direction of the processing fluid PF injected through the first supply pipe 140. The substrate support 120 may prevent the processing fluid PF injected through the first supply pipe 140 from directly spraying onto the lower surface of the substrate WF. The substrate support 120 may guide the processing fluid PF such that the processing fluid PF injected through the first supply pipe 140 flows in the horizontal direction (X direction and / or Y direction) or in the lateral direction.

[0039] Support pins 120P may be disposed on the substrate support 120, and the substrate WF may be supported by the support pins 120P that contact the lower surface of the substrate WF. In this case, the diameter of the substrate support 120 may be smaller than the diameter of the substrate WF.

[0040] The fluid supply device 130 can generate a processing fluid PF for processing the substrate WF and supply the generated processing fluid PF to the processing space PS of the processing chamber 110. In some embodiments, the fluid supply device 130 can be configured to generate and supply a supercritical fluid, and the substrate processing apparatus 10 can be configured to process the substrate WF using the supercritical fluid. For example, the substrate processing apparatus 10 can be configured to perform a drying process on the substrate WF by using the supercritical fluid.

[0041] The physical properties of the supercritical fluid (e.g., density, viscosity, diffusion coefficient, polarity, etc.) can be continuously changed from a gaseous state to a liquid state according to a change in pressure. The supercritical fluid can include a material having a temperature equal to or higher than the critical temperature and a pressure equal to or higher than the critical pressure, can have diffusivity, viscosity, and surface tension in the gaseous state, and can also have solubility in the liquid state. When performing a drying process on the substrate WF by using the supercritical fluid, the supercritical fluid having a small surface tension can penetrate into the fine grooves provided in the substrate WF and can dry the cleaning liquid or the rinsing liquid on the substrate WF while suppressing a large amount of dropping, collapse, or tilting (hereinafter referred to as tilting phenomenon) in the fine patterns on the substrate WF.

[0042] For example, the supercritical fluid can include CO2, water (H2O), methane (CH4), ethane (C2H6), propane (C3H8), ethylene (C2H4), propylene (C2H2), methanol (C2H3OH), ethanol (C2H5OH), sulfur hexafluoride (SF6), acetone (C3H8O), or a combination thereof. In some embodiments, the fluid supply device 130 can be configured to generate and supply a supercritical fluid containing CO2. Since CO2 has a low critical temperature and critical pressure of about 31°C and about 73 bar, respectively, and is non-toxic, non-flammable, and relatively inexpensive, CO2 can be easily used for drying the substrate WF.

[0043] The fluid supply device 130 can be configured to supply the processing fluid PF to the processing space PS of the processing chamber 110 via at least one of a first supply pipe 140 disposed on the lower wall 110LW of the processing chamber 110 or a second supply pipe 150 disposed on the upper wall 110UW of the processing chamber 110.

[0044] The first supply pipe 140 can extend from the lower wall 110LW of the processing chamber 110. The first supply pipe 140 can extend downward from the lower surface 111 of the processing chamber 110. For example, the first supply pipe 140 can be inserted into the lower wall 110LW of the processing chamber 110.

[0045] The processing fluid PF provided by the fluid supply device 130 can be supplied to the first supply pipe 140 via the first supply line SL1, and an on / off valve for controlling the supply of the processing fluid PF to the first supply pipe 140 can be installed on the first supply line SL1. The processing fluid PF can be injected into the processing space PS through the first supply pipe 140. In some embodiments, the first supply pipe 140 may have a circular or oval shape in a plan view. In some embodiments, the first supply pipe 140 may have a polygonal shape such as a square in a plan view.

[0046] The second supply pipe 150 can extend from the upper wall 110UW of the processing chamber 110. The second supply pipe 150 can extend from the upper surface 113 of the processing chamber 110 in the vertically upward direction (+Z direction). For example, the second supply pipe 150 can be inserted into the upper wall 110UW of the processing chamber 110.

[0047] The processing fluid PF provided by the fluid supply device 130 can be supplied to the second supply pipe 150 via the second supply line SL2, and an on / off valve for controlling the supply of the processing fluid PF to the second supply pipe 150 can be installed in the second supply line SL2. The processing fluid PF can be injected into the processing space PS through the second supply pipe 150. In some embodiments, the second supply pipe 150 may have a circular or oval shape in a plan view. In some embodiments, the second supply pipe 150 may have a polygonal shape such as a square in a plan view.

[0048] The discharge pipe 160 can extend from the lower wall 110LW of the processing chamber 110. The discharge pipe 160 can extend downward from the lower surface 111 of the processing chamber 110. For example, the discharge pipe 160 can be inserted into the lower wall 110LW of the processing chamber 110.

[0049] The discharge pipe 160 can be connected to the discharge device 170 via the discharge line EL. By performing the discharge operation of the discharge device 170, the discharged fluid DF in the processing space PS can be sucked into the discharge pipe 160. In some embodiments, the discharge pipe 160 may have a circular or oval shape in a plan view. In some embodiments, the discharge pipe 160 may have a polygonal shape such as a square in a plan view.

[0050] The discharge device 170 can be configured to discharge the discharged fluid DF in the processing space PS to the outside of the processing chamber 110. The discharge device 170 can be connected to the discharge pipe 160 on the lower wall 110LW of the processing chamber 110 via the discharge line EL.

[0051] In this case, the exhaust fluid DF can be defined as the fluid in the processing space PS including various gases, chemicals, by-products, particles, processing fluid PF, etc. The exhaust fluid DF can be discharged from the processing space PS via the discharge pipe 160. The discharging device 170 can include a vacuum pump, a recovery unit for recovering the exhaust fluid DF, an on / off valve installed on the discharge pipeline EL (see Figure 5 171 in

[0052] ), a flow meter installed on the discharge pipeline EL, etc. For example, in order to perform the discharging operation by using the discharging device 170, the vacuum pump can reduce the pressure in the discharge pipe 160 and suck the exhaust fluid DF in the processing space PS into the discharge pipe 160. In some embodiments, the discharging device 170 can be configured to control the pressure in the processing space PS by sucking and removing the exhaust fluid DF in the processing space PS.

[0053] As semiconductor devices require finer dimensions, an extreme ultraviolet (EUV) lithography method using a short wavelength has been proposed. By using EUV lithography, a photoresist pattern with a small horizontal dimension and a high aspect ratio can be formed. In order to reduce the dropping or collapse of the photoresist pattern during the formation of the fine photoresist pattern, a drying process using a supercritical fluid is being used.

[0054] However, in the related art, since the processing fluid PF is supplied at a high pressure through the first supply pipe 140 in the early stage of the drying process, a turbulent flow with a high flow rate may occur on the substrate WF. The turbulent flow generated in this way may be very close to or overlap with the formation of the substrate WF, and affect the fine pattern formed at the edge of the substrate WF, and therefore, a problem of tilting of the fine pattern may occur.

[0055] To solve this drawback of the related art, the substrate processing apparatus 10 according to one or more embodiments may include a step portion 110S and a circular portion 110R on the lower surface of the upper body 110U of the processing chamber 110. Since the substrate processing apparatus 10 includes the step portion 110S, the flow rate of the processing fluid PF and / or the flow rate distribution of the processing fluid PF on the substrate WF can be reduced. Since the substrate processing apparatus 10 includes the circular portion 110R, the size of the dead zone inside the processing chamber 110 can be reduced. Therefore, the substrate processing apparatus 10 according to one or more embodiments can effectively prevent the tilting phenomenon of the fine pattern at the edge of the substrate WF and improve the uniformity of the drying process of the substrate WF.

[0056] Figure 3 is a cross-sectional view of a substrate processing apparatus 10a according to an embodiment. Figure 3 shows the Figure 1 region corresponding to region A in Figure 1 and Figure 2 is described with reference to Figure 3 .

[0057] With reference to Figure 3 , the upper chamber 110Ua of the substrate processing apparatus 10a may include a stepped portion 110Sa and a circular portion 110Ra. The edge of the substrate WF may be vertically aligned with the stepped portion 110Sa in the vertical direction (Z direction). In this case, the angle θ of the stepped portion 110Sa may be about 90°.

[0058] Figure 4 is a cross-sectional view of a substrate processing apparatus 10b according to an embodiment. Figure 4 is the Figure 1 region corresponding to region A in Figures 1 to 3 is described with reference to Figure 4 .

[0059] With reference to Figure 4 , the upper chamber 110Ub of the substrate processing apparatus 10b may include a stepped portion 110Sb and a circular portion 110Rb. The edge of the substrate WF may not be vertically aligned with the stepped portion 110Sb in the vertical direction (Z direction). The distance from the central axis CAX to the edge of the substrate WF may be less than the distance from the central axis CAX to the stepped portion 110Sb.

[0060] In an embodiment, the angle θ of the stepped portion 110Sb with respect to the upper surface 113 of the processing chamber 110 a may be about 90° to about 180°. When the distance from the central axis CAX to the edge of the substrate WF is less than the distance from the central axis CAX to the stepped portion 110Sb, the angle θ of the stepped portion 110Sb a may be about 90° to about 180°.

[0061] As Figure 3 shown, when the stepped portion 110Sa is aligned with the edge of the substrate WF in the vertical direction (Z direction), the angle θ of the stepped portion 110Sa may be about 90°.

[0062] Figure 5 is a configuration diagram of a fluid supply device 130 of a substrate processing apparatus 10 according to an embodiment. It is described with reference to Figure 1 and Figure 2 with reference to Figure 5 .

[0063] With reference to Figure 5, the fluid supply device 130 may include a fluid supply tank 311, a condenser 313, a pump 350, a storage tank 315, and a heating device 360.

[0064] The fluid supply tank 311 may contain raw materials. For example, the fluid supply tank 311 may store the gaseous processing fluid PF. The condenser 313 may change the phase of the processing fluid PF. The condenser 313 may cool the processing fluid PF so that the processing fluid PF changes from a gaseous state to a liquid state. On the first fluid pipeline 321 connecting the fluid supply tank 311 to the condenser 313, a filter 331 for filtering impurities in the processing fluid PF and a valve 341 for controlling the flow of the processing fluid PF may be installed.

[0065] The pump 350 may be installed on the second fluid pipeline 322 extending between the condenser 313 and the storage tank 315. The pump 350 may drive the processing fluid PF so that the processing fluid PF liquefied by the condenser 313 is supplied to the storage tank 315 through the second fluid pipeline 322. On the second fluid pipeline 322 connecting the condenser 313 to the storage tank 315, a filter 333 for filtering impurities in the processing fluid PF and a valve 343 for controlling the flow of the processing fluid PF may be installed.

[0066] The storage tank 315 may store the processing fluid PF and change the phase of the processing fluid PF to a supercritical state. The storage tank 315 may heat the processing fluid PF by using an embedded heater. The embedded heater of the storage tank 315 may heat the processing fluid PF above the critical temperature of the processing fluid PF. Accordingly, the processing fluid PF discharged from the storage tank 315 may be in a supercritical state. The processing fluid PF discharged from the storage tank 315 may flow along the third fluid pipeline 323, and then may flow through the first supply pipeline SL1 extending from one end of the third fluid pipeline 323 toward the first supply pipe 140 of the processing chamber 110 and / or through the second supply pipeline SL2 extending from one end of the third fluid pipeline 323 toward the second supply pipe 150 of the processing chamber 110.

[0067] On the third fluid line 323, a heating device 360 configured to heat the processing fluid PF discharged from the storage tank 315 and a filter 335 for filtering impurities in the processing fluid PF can be installed. The heating device 360 can control the temperature of the processing fluid PF supplied to the processing chamber 110 by heating the processing fluid PF flowing through the third fluid line 323. The heating device 360 can include a resistive heater. The heating device 360 can include an in-line heater and / or a jacket heater installed on the third fluid line 323. A valve 351 for controlling the flow of the processing fluid PF can be installed on the first supply line SL1, and a valve 353 for controlling the flow of the processing fluid PF can be installed on the second supply line SL2.

[0068] Each of the first to third fluid lines 321 to 323 can include, for example, a pipe.

[0069] The fluid supply device 130 can differently control the first temperature of the processing fluid PF supplied to the lower part of the processing chamber 110 via the first supply pipe 140 and the second temperature of the processing fluid PF supplied to the upper part of the processing chamber 110 via the second supply pipe 150. For example, the first temperature and the second temperature of the processing fluid PF can be controlled by the heating device 360 and / or the heater of the storage tank 315. In some embodiments, the first temperature of the processing fluid PF supplied to the lower part of the processing chamber 110 via the first supply pipe 140 can be lower than the second temperature of the processing fluid PF supplied to the upper part of the processing chamber 110 via the second supply pipe 150.

[0070] Figure 6 and Figure 7 is a simulation diagram showing the flow rate of the processing fluid PF according to an experimental example of an embodiment, and Figure 8 is a simulation diagram showing the flow rate of the processing fluid PF according to a comparative example of the related art. In Figures 6 to 8 the dashed line indicates a line extending from the edge of the substrate WF in the vertical direction (Z direction). In Figure 6 the distance from the center of the substrate WF to the step portion 110S can be greater in the horizontal direction (X direction and / or Y direction) than the distance from the center of the substrate WF to the edge of the substrate WF, while in Figure 7 the step portion 110Sa is vertically aligned with the edge of the substrate WF in the vertical direction (Z direction). In Figure 8 the distance from the center of the substrate WF to the step portion 110SR can be less in the horizontal direction (X direction and / or Y direction) than the distance from the center of the substrate WF to the edge of the substrate WF. For example, Figure 6 can show Figure 2 a part of the substrate processing apparatus 10, and Figure 7can be shown Figure 3 A part of the substrate processing apparatus 10a. Refer to Figures 1 to 5 to describe Figure 6 and Figure 7 .

[0071] Refer to Figures 6 to 8 , when the step portion 110S is arranged to be farther from the center of the substrate WF than the edge of the substrate WF in the horizontal direction (X direction and / or Y direction), and / or when the step portion 110Sa is arranged to be vertically aligned with the edge of the substrate WF in the vertical direction (Z direction), the flow rate of the processing fluid PF and / or the flow rate distribution of the processing fluid PF on the substrate WF can be reduced. Therefore, the tilting phenomenon of the fine patterns on the substrate WF can be effectively prevented.

[0072] As a result, relatively fewer defective chips (defective products generated due to the tilting phenomenon of the patterns) are manufactured at the edge of the substrate WF, and thus, the number of qualified chips (qualified products without the tilting phenomenon of the patterns) can be increased.

[0073] In other words, those skilled in the art will learn from Figure 6 and Figure 7 the simulation results that in the substrate processing apparatus 10 according to one or more embodiments, the flow rate of the processing fluid PF and / or the flow rate distribution of the processing fluid PF on the substrate WF are reduced, and thus, the uniformity of the substrate WF processing is improved and the production yield is increased.

[0074] In addition, those skilled in the art will learn from Figure 8 the simulation results that in the substrate processing apparatus according to the comparative example of the related art, the flow rate of the processing fluid PF and / or the flow rate distribution of the processing fluid PF on the substrate WF are relatively high, and thus, the uniformity of the substrate WF processing is reduced and the production yield is reduced.

[0075] Figure 9 and Figure 10 are simulation diagrams showing the directions of the particle blocking flow according to the experimental examples of the embodiments; and Figure 11 is a simulation diagram of the direction of the particle blocking flow according to the comparative example of the related art. In Figures 9 to 11 , the dashed line may indicate a line extending from the edge of the substrate WF in the vertical direction (Z direction). In Figure 9 , the distance from the center of the substrate WF to the step portion 110S may be greater than the distance from the center of the substrate WF to the edge of the substrate WF in the horizontal direction (X direction and / or Y direction). In Figure 10 , the step portion 110Sa is vertically aligned with the edge of the substrate WF in the vertical direction (Z direction). In Figure 11In [description], the distance from the center of the substrate WF to the step portion 110SR can be less than the distance from the center of the substrate WF to the edge of the substrate WF in the horizontal direction (X direction and / or Y direction). For example, Figure 9 can show Figure 2 a part of the substrate processing apparatus 10, and Figure 10 can show Figure 3 a part of the substrate processing apparatus 10a. In Figures 9 to 11 [description], FP can represent the flow of particles, BP can represent the flow that blocks particles (i.e., particle blocking flow), and DZ can represent the dead zone. Refer to Figures 1 to 8 to describe Figures 9 to 11 .

[0076] Refer to Figures 9 to 11 , at the connection portion between the upper main body 110U and the lower main body 110L, external particles may flow into the processing space PS of the processing chamber 110. The particle blocking flow BP can be formed by the processing fluid PF provided to the lower part of the processing chamber 110. The particle blocking flow BP can be a turbulent flow generated by the processing fluid PF. In a plan view, with respect to the center of the substrate WF, the center BPC of the particle blocking flow BP can be located outside the edge of the substrate WF. Regardless of the positions of the step portions 110S, 110Sa, and 110SR, in a plan view, the particle blocking flow BP can be located outside the edge of the substrate WF with respect to the center of the substrate WF.

[0077] The dead zone DZ can be formed on the left side of the upper part of the processing space PS. The dead zone DZ can represent the region where the particles introduced from the outside of the processing chamber 110 maintain their positions. To prevent the formation of the dead zone DZ, the circular portion 110R can be used. When the processing chamber 110 includes the circular portion 110R, the size of the dead zone DZ can be reduced compared to the case where the processing chamber 110 does not include the circular portion 110R.

[0078] Figures 12 to 14 is a simulation diagram of the flow rate of the processing fluid PF according to a comparative example of the related art. In Figures 12 to 14 [description], the dashed line can indicate the line extending from the edge of the substrate WF in the vertical direction (Z direction). Refer to Figures 1 to 11 to describe Figures 12 to 14 .

[0079] Refer to Figures 12 to 14 , the distance from the center of the substrate WF to each of the step portions 110SR, 110SRa, and 110SRb can be less than the distance from the center of the substrate WF to the edge of the substrate WF in the horizontal direction (X direction and / or Y direction).

[0080] Figure 12The stepped portion 110SR therein may have a first angle θ1, Figure 13 the stepped portion 110SRa therein may have a second angle θ2, and Figure 14 the stepped portion 110SRb therein may have a third angle θ3. The first angle θ1 may be about 90°, and the second angle θ2 and the third angle θ3 may be about 90° or greater. The third angle θ3 may be greater than the second angle θ2.

[0081] As the angles of the stepped portions 110SR, 110SRa, and 110SRb increase, the flow rate of the processing fluid PF toward the substrate WF and the incident angle of the processing fluid PF relative to the substrate WF may increase. Specifically, when the stepped portions 110SR, 110SRa, and 110SRb are arranged closer to the center of the substrate WF than to the edge of the substrate WF, and the angles of the stepped portions 110SR, 110SRa, and 110SRb exceed about 90°, the flow rate of the processing fluid PF toward the substrate WF and the incident angle of the processing fluid PF relative to the substrate WF may increase.

[0082] Therefore, when the angle of the stepped portion 110S is about 90° or greater, the stepped portion 110S should be farther from the center of the substrate WF than from the edge of the substrate WF in the horizontal direction (X direction and / or Y direction). When the stepped portion 110S is aligned with the edge of the substrate WF in the vertical direction (Z direction), the angle of the stepped portion 110S may be about 90°.

[0083] Figure 15 is a flowchart of a substrate processing method according to an embodiment, and Figure 16 is a graph showing the pressure change in the processing chamber 110 while performing substrate processing. Refer to Figures 1 to 5 to describe Figure 15 and Figure 16 .

[0084] Refer to Figure 15 and Figure 16 , and a substrate processing method S10 using any one of the above-described substrate processing apparatuses 10, 10a, and 10b will be described.

[0085] In a first operation S110, the substrate WF may be loaded into the processing space PS of the processing chamber 110. When the substrate WF is loaded into the processing space PS, the processing chamber 110 may be in an open position. The substrate WF may be placed on the substrate support 120. When the substrate WF is placed on the substrate support 120, the processing chamber 110 may be switched from the open position to the closed position so that the processing space PS is sealed from the outside of the processing chamber 110.

[0086] When the loading operation of the substrate WF is completed, a drying process can be performed on the substrate WF. The drying process of the substrate WF may include: a second operation S120 of increasing the pressure of the processing space PS to a first pressure; a third operation S130 of replacing the material on the substrate WF with a processing fluid PF; and a fourth operation S140 of discharging the discharge fluid DF of the processing space PS.

[0087] The second operation S120 may include: supplying a processing fluid PF in a supercritical state to the processing space PS such that the processing space PS is filled with a supercritical fluid. In some embodiments, by supplying a processing fluid PF in a supercritical state to the processing space PS, the fluid supply device 130 can increase the pressure in the processing space PS from an initial pressure P0 similar to atmospheric pressure to a first pressure P1. In some embodiments, the first pressure P1 may be higher than the critical pressure of the processing fluid PF. In an embodiment, the first pressure P1 may be, for example, about 150 bar.

[0088] In some embodiments, the second operation S120 may include: a first supply operation of supplying a processing fluid PF at a first temperature to the lower part of the processing space PS via a first supply pipe 140; and a second supply operation of supplying a processing fluid PF at a second temperature to the upper part of the processing space PS via a second supply pipe 150. In the first supply operation, the first temperature of the processing fluid PF may be about 35°C to about 70°C. In the second supply operation, the second temperature of the processing fluid PF may be higher than its first temperature. In some embodiments, in the second supply operation, the second temperature of the processing fluid PF may be about 70°C to about 120°C.

[0089] In some embodiments, the first supply operation may be performed until the pressure of the processing space PS reaches a target intermediate pressure between the initial pressure P0 and the first pressure P1. For example, in some embodiments, the target intermediate pressure may be about 75 bar to about 90 bar. Due to this rapid change in pressure, turbulence will occur in the processing space PS. When the pressure of the processing space PS reaches the target intermediate pressure by performing the first supply operation, the second supply operation may be performed. The second supply operation may be performed until the pressure of the processing space PS reaches the first pressure P1.

[0090] In the third operation S130, a substance (e.g., a cleaning liquid and / or a rinsing liquid) on the substrate WF may be mixed with the processing fluid PF (or the substance on the substrate WF may be replaced with the processing fluid PF), and the mixed fluid may be discharged via the discharge pipe 160. The third operation S130 may include: a pressure reduction process of reducing the pressure of the processing space PS from the first pressure P1 to a second pressure P2 lower than the first pressure P1; and a pressure increase process of increasing the pressure of the processing space PS from the second pressure P2 to the first pressure P1. The second pressure P2 may be from about 75 bar to about 90 bar.

[0091] In some embodiments, the third operation S130 may include: alternately repeating the pressure reduction process and the pressure increase process two or more times. The pressure reduction process may include: a process of discharging the discharge fluid DF in the processing space PS via the discharge device 170. The pressure increase process may include: supplying the processing fluid PF at the second temperature to the upper part of the processing space PS via the second supply pipe 150.

[0092] In the fourth operation S140, the discharge device 170 may discharge the processing fluid PF in the processing space PS as the discharge fluid DF, and reduce the pressure of the processing space PS to the initial pressure P0.

[0093] When the drying process of the substrate WF is completed in this way, the processing chamber 110 may be switched from the closed position to the open position, and the substrate processing method S10 may further include a fifth operation S150 of unloading the substrate WF from the processing space PS.

[0094] Figure 17 is a plan view of the overall arrangement of the substrate processing apparatus 1000 according to an embodiment.

[0095] Reference Figure 17 , the substrate processing apparatus 1000 may include an indexing module 1010, a processing module 1040, and a substrate transfer unit 1050.

[0096] The indexing module 1010 may include a load port 1011 and a transfer frame 1013. The load port 1011, the transfer frame 1013, and the processing module 1040 may be arranged in a row. Hereinafter, the direction along which the load port 1011, the transfer frame 1013, and the processing module 1040 are arranged in a row may be defined as the first horizontal direction (X direction), the horizontal direction perpendicular to the first horizontal direction (X direction) may be defined as the second horizontal direction (Y direction), and the direction perpendicular to each of the first horizontal direction (X direction) and the second horizontal direction (Y direction) may be defined as the vertical direction (Z direction).

[0097] A container CT containing a substrate WF can be placed on a loading port 1011. The loading ports 1011 can be provided in plural and can be arranged in a row in a second horizontal direction (Y direction). Although Figure 17 four loading ports 1011 are shown, the number of loading ports 1011 can be increased or decreased according to conditions such as processing efficiency and / or installation area. The container CT can include a plurality of slots configured to support the edges of the substrate WF. The plurality of slots can be spaced apart from each other in a vertical direction (Z direction), and accordingly, a plurality of substrates WF can be mounted on the container CT in the vertical direction (Z direction). The container CT can include, for example, a front-opening unified pod (FOUP).

[0098] A transfer frame 1013 can transfer the substrate WF between the container CT on the loading port 1011 and a buffer chamber 1041 of a processing module 1040. The transfer frame 1013 can include an indexing robot 1020 and an indexing track 1030. The indexing track 1030 can extend in a second horizontal direction (Y direction). The indexing robot 1020 can be mounted on the indexing track 1030 and can linearly move along the indexing track 1030 in the second horizontal direction (Y direction).

[0099] The processing module 1040 can include a buffer chamber 1041, a transfer chamber 1043, and first to fourth processing chambers CB1 to CB4. The transfer chamber 1043 can extend in a first horizontal direction (X direction). In some embodiments, the first to fourth processing chambers CB1 to CB4 can be spaced apart from each other in a second horizontal direction (Y direction), and the transfer chamber 1043 is interposed therebetween. Additionally, the first to fourth processing chambers CB1 to CB4 can be arranged in the first horizontal direction (X direction). In other embodiments, some of the first to fourth processing chambers CB1 to CB4 can be stacked in a vertical direction (Z direction).

[0100] In Figure 17 this case, the arrangement of the first to fourth processing chambers CB1 to CB4 can be an example, and in some embodiments, the first to fourth processing chambers CB1 to CB4 can be arranged in various ways. For example, all of the first to fourth processing chambers CB1 to CB4 can also be arranged only on one side of the transfer chamber 1043.

[0101] The buffer chamber 1041 can be arranged between the transfer frame 1013 and the transfer chamber 1043. The buffer chamber 1041 can provide a space for storing the substrate WF between the transfer chamber 1043 and the transfer frame 1013. The buffer chamber 1041 can include a plurality of slots or internal spaces for storing the substrate WF. The plurality of slots can overlap each other and be spaced apart from each other in the vertical direction (Z direction). The buffer chamber 1041 can include an opening in each of the surface facing the transfer frame 1013 and the surface facing the transfer chamber 1043, through which the substrate WF enters and exits.

[0102] The transfer chamber 1043 can transfer the substrate WF between the buffer chamber 1041 and the first to fourth processing chambers CB1 to CB4. The substrate transfer unit 1050 can be arranged in the transfer chamber 1043. The substrate transfer unit 1050 can be mounted on a track extending in the first horizontal direction (X direction) and can linearly move along the track in the first horizontal direction (X direction). Between the first to fourth processing chambers CB1 to CB4, the substrate WF can be transferred by the substrate transfer unit 1050.

[0103] The first to fourth processing chambers CB1 to CB4 can sequentially perform processing on a single substrate WF. For example, after performing a developing process on the substrate WF in the first processing chamber CB1, a drying process can be performed on the substrate WF in the second processing chamber CB2. The developing process can include a process of removing the photoresist in the portion exposed (or not exposed) to EUV light during the exposure process. The drying process can be performed by a processing fluid PF in a supercritical state. In some embodiments, the processing fluid PF in a supercritical state can include carbon dioxide (CO2).

[0104] The first processing chamber CB1 can supply a developer to the substrate WF in a dry state by using a spraying device. The developer can include, for example, a non-polar organic solvent. The developer can include a liquid capable of selectively removing the soluble region of the photoresist by using EUV light. In other words, due to the developer in the first processing chamber CB1, the substrate WF in a dry state can become a substrate WF in a wet state. The first processing chamber CB1 can be arranged in the processing module 1040 in multiple numbers, and the number of the first processing chambers CB1 can be increased or decreased according to the processing efficiency and / or the installation area of the processing module 1040.

[0105] The second processing chamber CB2 can receive the substrate WF in a wet state from the first processing chamber CB1, and can remove the developer from the transferred substrate WF by using a supercritical fluid. Generally, a method of rotating the substrate WF at high speed is used, but the photoresist pattern for EUV light may collapse due to surface tension during high-speed rotation. To solve this problem, the developer can be removed by dissolving the developer in a supercritical fluid and discharging the supercritical fluid. In this way, by removing the developer and the supercritical fluid together from the substrate WF, the substrate WF in a wet state can be dried. In other words, due to the drying process in the second processing chamber CB2, the substrate WF in a wet state can become a substrate WF in a dry state. The second processing chamber CB2 can be arranged in multiple numbers in the processing module 1040, and the number of the second processing chambers CB2 can be increased or decreased according to the processing efficiency and / or installation area of the processing module 1040. In some embodiments, the second processing chamber CB2 can include any one of the above-described substrate processing devices 10, 10a, and 10b.

[0106] The third processing chamber CB3 can receive the substrate WF from the second processing chamber CB2, and can perform a baking process to completely dry the substrate WF. On the hot plate in the third processing chamber CB3, the baking process can be performed on the substrate WF at a temperature of about 120°C to about 170°C for about 30 seconds to about 120 seconds. In other words, due to the baking process in the third processing chamber CB3, the substrate WF can remain in a dry state.

[0107] The fourth processing chamber CB4 can receive the substrate WF from the third processing chamber CB3, and can perform a cooling process to lower the temperature of the substrate WF. The cooling process can be performed on the cooling plate in the fourth processing chamber CB4. In other words, due to the cooling process in the fourth processing chamber CB4, the substrate WF can remain in a dry state.

[0108] Figure 18 is a flowchart of a fine pattern forming method S20 using the substrate processing device 10 according to an embodiment.

[0109] Reference Figure 18 , the fine pattern forming method S20 can include the processing sequence of the first operation S210 to the sixth operation S260.

[0110] When implementing a certain embodiment in a different manner, the specific processing sequence can also be executed differently from the sequence to be described. For example, in some embodiments, two consecutively described processes can be executed substantially simultaneously, or in the reverse order of the sequence to be described.

[0111] The fine pattern forming method S20 according to an embodiment may include: a first operation S210 of forming a layer to be etched on a substrate; a second operation S220 of forming a photoresist pattern; a third operation S230 of forming a fine pattern by patterning the layer to be etched; a fourth operation S240 of removing the photoresist pattern; a fifth operation S250 of cleaning the substrate on which the fine pattern is formed; and a sixth operation S260 of drying the substrate on which the fine pattern is formed.

[0112] Reference is made below Figures 19 to 21 to detail the technical features of each of the first operation S210 to the sixth operation S260.

[0113] Figures 19 to 21 is a cross-sectional view of the fine pattern forming method S20 according to an embodiment for explaining Figure 18 in the order of processing.

[0114] Referring to Figure 19 , an etch target layer 11 may be formed on a substrate WF, a first mask layer 12 and a second mask layer 13 may be formed on the etch target layer 11, and an EUV photoresist pattern EP may be formed on the second mask layer 13.

[0115] The substrate WF may include a semiconductor material and may include a Group IV semiconductor or a III-V compound semiconductor. For example, the Group IV semiconductor may include silicon (Si), germanium (Ge), or silicon-germanium. The substrate WF may be provided as a bulk wafer or a wafer including an epitaxial layer. Although not shown, unit elements (e.g., various types of active elements and passive elements) for forming semiconductor devices may be formed on the substrate WF. The substrate WF may be divided into a first region R1 and a second region R2.

[0116] The etch target layer 11 may be disposed on the substrate WF. The etch target layer 11 may include a single layer or a multi-layer in which a plurality of material layers are stacked. The etch target layer 11 may include a material layer having an etch selectivity with respect to the first mask layer 12 and the second mask layer 13. For example, the etch target layer 11 may include polysilicon, but is not limited thereto.

[0117] The first mask layer 12 and the second mask layer 13 may include various material layers for forming a target pattern on the etch target layer 11. The first mask layer 12 may be formed on the etch target layer 11, and the second mask layer 13 may be formed on the first mask layer 12.

[0118] The first mask layer 12 and the second mask layer 13 may be configured to have various thicknesses for forming a target pattern on the etch target layer 11. For example, the thickness of the second mask layer 13 may be less than the thickness of the first mask layer 12.

[0119] An EUV photoresist pattern EP can be formed on the second mask layer 13. The EUV photoresist pattern EP can be formed by forming a photoresist film that reacts to EUV light using an EUV exposure apparatus (not shown) and exposing and developing the same.

[0120] The EUV photoresist pattern EP can include a first line pattern EP1 and a second line pattern EP2 according to the formation position. In this case, for ease of explanation, the patterns formed in the first region R1 among the first line pattern EP1 and the second line pattern EP2 can be referred to as a plurality of first patterns EP1, and the patterns formed in the second region R2 among the first line pattern EP1 and the second line pattern EP2 can be referred to as a plurality of second patterns EP2.

[0121] The plurality of first patterns EP1 can include a first line and space pattern, wherein the plurality of first patterns EP1 have a first width W1 of the same mask line and extend parallel to each other in the second horizontal direction (Y direction), while being spaced apart from each other by the same first gap G1 in the first horizontal direction (X direction). The plurality of second patterns EP2 can include a second line and space pattern, wherein the plurality of second patterns EP2 have the same second width W2 of the same mask line and extend parallel to each other in the second horizontal direction (Y direction), while being spaced apart from each other by the same second gap G2 in the first horizontal direction (X direction).

[0122] In some embodiments, the first gap G1 of the plurality of first patterns EP1 can be formed to be greater than the second gap G2 of the plurality of second patterns EP2. In some embodiments, the first width W1 of the plurality of first patterns EP1 can be formed to be greater than the second width W2 of the plurality of second patterns EP2. However, this is an example for ease of explanation, and the embodiments are not limited thereto.

[0123] A drying process can be performed on the substrate WF on which the first line pattern EP1 and the second line pattern EP2 are formed. Also referring to Figure 1 , the substrate processing apparatus 10 described above can reduce the flow rate of the processing fluid PF and / or the flow rate distribution of the processing fluid PF on the substrate WF, and reduce the size of the dead zone DZ in the processing space PS by including a step portion 110S and a circular portion 110R. Accordingly, the tilting phenomenon of the plurality of second patterns EP2 in the second region R2 of the substrate WF can be effectively prevented, and the uniformity of the drying process of the substrate WF can be improved.

[0124] Referring to Figure 20 , by using the dried EUV photoresist pattern (see EP in Figure 19 ) as an etching mask, the first mask layer 12 and the second mask layer 13 thereunder can be etched in sequence.

[0125] The first mask pattern 12P and the second mask pattern 13P can be formed by using the dried EUV photoresist pattern (see EP in Figure 19 ) as an etching mask and performing anisotropic etching on the first mask layer and the second mask layer (see 12 and 13 in Figure 19 ). For example, as the anisotropic etching method for forming the first mask pattern 12P and the second mask pattern 13P, a dry etching process such as a reactive ion etching (RIE) process or an inductively coupled plasma (ICP) etching process can be used.

[0126] Subsequently, the dried EUV photoresist pattern (see EP in Figure 19 ) can be removed. The dried EUV photoresist pattern (see EP in Figure 19 ) can be removed by using an ashing and stripping process. The removal process of the dried EUV photoresist pattern (see EP in Figure 19 ) can be performed under conditions that suppress the etching of the first mask pattern 12P and the second mask pattern 13P.

[0127] Referring to Figure 21 , the etching target layer (see 11 in Figure 20 ) disposed under the first mask pattern and the second mask pattern (see 12P and 13P in Figure 20 ) can be etched by using the first mask pattern and the second mask pattern (see 12P and 13P in

[0128] ) as an etching mask to form the target pattern 11P on the substrate WF. Figure 20 The etching target layer (see 11 in Figure 20 ) can be anisotropically etched by using the first mask pattern and the second mask pattern (see 12P and 13P in

[0129] ) as an etching mask to form the target pattern 11P. As the anisotropic etching method for forming the target pattern 11P, a dry etching process such as an RIE process and an ICP etching process can be used. The target pattern 11P can have a line-and-space pattern, where the target patterns 11P are spaced apart from each other in a first horizontal direction (X direction) and extend parallel to each other in a second horizontal direction (Y direction). Figure 20 ) can be removed. The removal process can be performed under conditions that suppress the etching of the target pattern 11P.

[0130] While various embodiments have been specifically shown and described with reference to the accompanying drawings, it will be understood that various changes in form and detail may be made therein without departing from the spirit and scope of the appended claims.

Claims

1. A substrate processing apparatus, comprising: A processing chamber including a processing space; A substrate support configured to accommodate and support a substrate in the processing chamber; A fluid supply pipe disposed in a lower portion of the processing chamber; and A fluid supply device configured to supply a processing fluid to the processing space through the fluid supply pipe, Wherein the processing chamber includes a stepped portion and a circular portion both in an upper surface defining the processing space, and Wherein a first horizontal separation distance from a center of the processing chamber to the stepped portion is greater than a second horizontal separation distance from the center of the processing chamber to an edge of the substrate.

2. The substrate processing apparatus according to claim 1, wherein, The stepped portion is recessed vertically upward from the upper surface.

3. The substrate processing apparatus according to claim 1, wherein: The first horizontal separation distance from the center of the processing chamber to the stepped portion is less than a third horizontal separation distance from the center of the processing chamber to the circular portion.

4. The substrate processing apparatus according to claim 1, wherein, An angle of the stepped portion with respect to the upper surface is 90° to 180°.

5. The substrate processing apparatus according to claim 1, wherein, A vertical height of the circular portion decreases in a horizontal direction away from the center of the processing chamber.

6. The substrate processing apparatus according to claim 1, wherein: In a plan view, a second distance from the edge of the substrate to the stepped portion is 2 / 3 or less of a first distance from the edge of the substrate to a side surface of the processing chamber.

7. The substrate processing apparatus according to claim 1, wherein, A distance from an upper surface of the processing chamber to an upper surface of the substrate is 2 mm to 10 mm.

8. The substrate processing apparatus according to claim 1, wherein, The processing fluid includes carbon dioxide.

9. A substrate processing apparatus, comprising: A processing chamber including a processing space; A substrate support configured to accommodate and support a substrate in the processing chamber; A fluid supply pipe disposed in a lower portion of the processing chamber; and A fluid supply device configured to supply a processing fluid to the processing space through the fluid supply pipe, Wherein the processing chamber includes a stepped portion and a circular portion on an upper surface defining the processing space, and Wherein the stepped portion is vertically aligned with an edge of the substrate.

10. The substrate processing apparatus according to claim 9, wherein, The stepped portion contacts the circular portion.

11. The substrate processing apparatus according to claim 9, wherein, An angle of the stepped portion with respect to the upper surface is 90°.

12. The substrate processing apparatus according to claim 9, Among them, The processing chamber includes an upper body and a lower body, and Wherein the upper body is configured to be coupled to the lower body to cover a space provided by the lower body.

13. The substrate processing apparatus according to claim 12, wherein, The upper body has a shape that is axially symmetric with respect to a center of the upper body.

14. The substrate processing apparatus according to claim 9, wherein, In the processing space, a center of a turbulent flow generated by a high-pressure inflow of the processing fluid is formed at a position spaced apart from the edge of the substrate.

15. The substrate processing apparatus according to claim 9, wherein, A diameter of the substrate support is smaller than a diameter of the substrate.

16. The substrate processing apparatus according to claim 9, wherein, The substrate includes an exposed extreme ultraviolet (EUV) photoresist pattern.

17. The substrate processing apparatus according to claim 9, wherein, The processing fluid flows into the processing space through a lower portion of the substrate support.

18. A substrate processing method, comprising: Loading a substrate into a processing space of a processing chamber; A processing fluid is supplied into the processing chamber through at least one of a first supply pipe provided on a bottom wall of the processing chamber or a second supply pipe provided on an upper wall of the processing chamber; and the processing fluid in the processing chamber is discharged through a discharge pipe provided on the bottom wall of the processing chamber, wherein the processing chamber includes an upper processing chamber and a lower processing chamber, and wherein the upper processing chamber includes a stepped portion and a circular portion.

19. The substrate processing method according to claim 18, wherein: a first horizontal separation distance from the center of the processing chamber to an edge of the substrate is equal to or less than a second horizontal separation distance from the center of the processing chamber to the stepped portion.

20. The substrate processing method according to claim 18, wherein, The angle of the stepped portion with respect to an upper surface defining the processing space is 90° to 180°.

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