High-voltage silicon stack

Abstract

The present invention provides a high-voltage silicon stack. The high-voltage silicon stack includes a substrate, multiple first-side conductive members, multiple second-side conductive members, and a connecting member. The substrate has a first side surface and a second side surface opposite to each other. At least some of the first-side conductive members are staggered along the first direction on the first side surface, and at least some of the second-side conductive members are staggered along the first direction on the second side surface. The connecting member is cylindrical and passes through the substrate, wherein the multiple first-side conductive members and the multiple second-side conductive members are staggered along the second direction. The connecting member is arranged between the first-side conductive member and the adjacent second-side conductive member. The second direction satisfies the perpendicular condition to the substrate, and the second direction satisfies the perpendicular condition to the first direction. In this way, the heat in the high-voltage silicon stack is more evenly distributed and the heat dissipation effect is better. The connecting member can ensure the circulation of heat on both sides of the substrate, further improve the uniformity of heat distribution, and have a simpler and more compact structure.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor devices, and in particular to a high-voltage silicon stack. Background Art

[0002] As an important rectifier device in high-voltage power supplies, high-voltage silicon stacks play the roles of rectification and filtering, voltage conversion, voltage doubling rectification, and isolation protection in power supply circuits.

[0003] High-voltage silicon stacks typically consist of multiple rectifier diodes arranged in series along a predetermined direction. During operation, the diodes utilize their unidirectional conductivity to rectify sinusoidal alternating current into unidirectional direct current, ensuring unidirectional current flow. Simultaneously, the diodes' ability to block reverse current protects other components in the circuit from reverse voltage damage, achieving isolation protection.

[0004] However, this high-voltage silicon stack has problems such as complex structure and low space utilization. The rectifier diodes generate heat during operation, which also causes uneven heat distribution and poor heat dissipation within the high-voltage silicon stack. Summary of the Invention

[0005] In order to at least partially solve the problems existing in the prior art, according to one aspect of the present invention, a high-voltage silicon stack is provided. The high-voltage silicon stack includes a substrate having a first side surface and a second side surface opposite to each other; a plurality of first-side conductive members, at least some of which are staggered along a first direction on the first side surface; a plurality of second-side conductive members, at least some of which are staggered along the first direction on the second side surface; and a connecting member, which is cylindrical and extends through the substrate; wherein the plurality of first-side conductive members and the plurality of second-side conductive members are staggered along a second direction, the connecting member is arranged between the first-side conductive member and the adjacent second-side conductive member, and the second direction is perpendicular to the substrate and the second direction is perpendicular to the first direction.

[0006] Exemplarily, the plurality of first-side conductive elements are arranged in at least two columns, the axes of the first-side conductive elements in each column are parallel, and the axes of the first-side conductive elements in two adjacent columns have an included angle.

[0007] Exemplarily, the plurality of second-side conductive elements are arranged in at least two columns, the axes of the second-side conductive elements in each column are parallel, and the axes of the second-side conductive elements in two adjacent columns have an included angle.

[0008] Exemplarily, the first direction is the length direction of the substrate.

[0009] Exemplarily, a ceramic heat conducting sheet is attached to both the side of the first-side conductive member facing away from the substrate and the side of the second-side conductive member facing away from the substrate.

[0010] Exemplarily, a heat sink is attached to the side of the ceramic heat conducting plate facing away from the substrate.

[0011] Exemplarily, the heat sink includes a first sphere and a second sphere connected to the first sphere, a first contact surface is formed on one side of the first sphere and is in contact with the ceramic heat conductive plate, a second contact surface is formed on the end of the first sphere away from the first contact surface, and a third contact surface is formed on the end of the second sphere facing the second contact surface and is in contact with the second contact surface.

[0012] Exemplarily, orthographic projections of the plurality of first-side conductive elements on the substrate and orthographic projections of the plurality of second-side conductive elements on the substrate have no overlapping portion.

[0013] Exemplarily, a packaged thermal conductive part is provided on the outside of the substrate, and the packaged thermal conductive part is filled with a first filler and a second filler, and the sizes of the first filler and the second filler are different. The substrate, the first side conductive part and the second side conductive part are all located in the packaged thermal conductive part, and the connecting part is provided through the packaged thermal conductive part.

[0014] Exemplarily, the inner wall of the connecting piece is provided with wind guide ribs, and the wind guide ribs are spirally arranged along the second direction.

[0015] The high-voltage silicon stack provided by the present application has a staggered arrangement of the first-side conductive parts and a staggered arrangement of the second-side conductive parts. Under the condition that the overall spatial dimensions remain unchanged, the number of conductive parts can be greater, thereby improving the performance of the high-voltage silicon stack. A more complex heat dissipation channel can be formed between the conductive parts located on the same side, resulting in a better heat dissipation effect. The staggered arrangement of the first-side conductive parts and the second-side conductive parts along the second direction makes the heat distribution in the high-voltage silicon stack more uniform. The connecting part is arranged between the adjacent first-side conductive parts and the second-side conductive parts to ensure the circulation of heat on both sides of the substrate, further improving the uniformity of heat distribution. One connecting part can correspond to one first-side conductive part and one second-side conductive part, which has a simpler and more compact structure, higher space utilization, and can better meet the needs of small volume and high power.

[0016] The Summary of the Invention introduces a series of simplified concepts that will be further described in detail in the Detailed Description of the Invention. This Summary of the Invention is not intended to limit the key features and essential features of the claimed technical solution, nor is it intended to determine the scope of protection of the claimed technical solution.

[0017] The advantages and features of the present invention are described in detail below with reference to the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] The following drawings of the present invention are incorporated herein as part of this invention for understanding the present invention. The drawings illustrate embodiments of the present invention and their descriptions are used to explain the principles of the present invention. In the drawings:

[0019] Figure 1 is a perspective view of a high voltage silicon stack according to an exemplary embodiment of the present invention;

[0020] Figure 2 is a perspective view of a high voltage silicon stack according to an exemplary embodiment of the present invention;

[0021] Figure 3 is a side view of a high voltage silicon stack according to an exemplary embodiment of the present invention;

[0022] Figure 4 is a perspective view of a high voltage silicon stack according to an exemplary embodiment of the present invention;

[0023] Figure 5 is a top view of a high voltage silicon stack according to an exemplary embodiment of the present invention;

[0024] Figure 6 is a bottom view of a high voltage silicon stack according to an exemplary embodiment of the present invention;

[0025] Figure 7 A perspective view of a first-side conductive member, a ceramic heat-conducting sheet, and a heat sink according to an exemplary embodiment of the present invention;

[0026] The above drawings include the following reference numerals:

[0027] 10. High-voltage silicon stack; 110. Substrate; 1110. First side; 1120. Second side; 120. First side conductive member; 130. Second side conductive member; 140. Connecting member; 150. Ceramic thermal pad; 160. Heat sink; 1610. First sphere; 1620. Second sphere; 170. Packaged thermal member. DETAILED DESCRIPTION

[0028] In the following description, a large amount of detail is provided to facilitate a thorough understanding of the present invention. However, it will be appreciated by those skilled in the art that the following description merely illustrates preferred embodiments of the present invention, and that the present invention may be practiced without one or more of these details. Furthermore, to avoid confusion with the present invention, some technical features well known in the art have not been described in detail.

[0029] To provide a thorough understanding of the embodiments of the present invention, a detailed description of the structure will be provided in the following description. It should be understood that the implementation of the embodiments of the present invention is not limited to the specific details familiar to those skilled in the art. Preferred embodiments of the present invention are described below in detail, but in addition to these detailed descriptions, the present invention may also have other embodiments.

[0030] The embodiment of the present invention provides a high voltage silicon stack. Figure 1 、 Figure 2 、 Figure 5 and Figure 6 The high-voltage silicon stack 10 may include a substrate 110, multiple first-side conductive elements 120, multiple second-side conductive elements 130, and a connecting element 140. The substrate 110 may have a first side 1110 and a second side 1120 that face each other. The substrate 110 may be a ceramic printed circuit board (PCB), which has excellent insulation, high-temperature resistance, and high thermal conductivity and heat dissipation capabilities. At least some of the first-side conductive elements 120 are staggered along the first direction XX on the first side 1110. At least some of the second-side conductive elements 130 are staggered along the first direction XX on the second side 1120. The first-side conductive elements 120 and the second-side conductive elements 130 may be diodes soldered to the substrate 110 and responsible for high-voltage rectification. Alternatively, the first-side conductive elements 120 and the second-side conductive elements 130 may be any other semiconductor devices capable of rectification. The connecting element 140 may be cylindrical and extend through the substrate 110. The connecting member 140 may be disposed along the second direction YY and pass through the substrate 110 , or may be disposed along any other direction as long as the spaces on two opposite sides of the substrate 110 are connected.

[0031] Among them, the plurality of first side conductive members 120 and the plurality of second side conductive members 130 can be staggered along the second direction YY, and the connecting member 140 can be arranged between the first side conductive member 120 and the adjacent second side conductive member 130. The second direction YY satisfies the perpendicular condition to the substrate 110, and the second direction YY satisfies the perpendicular condition to the first direction XX. The staggered arrangement of the plurality of first side conductive members 120 and the plurality of second side conductive members 130 along the second direction YY can be understood as follows: in the second direction YY, the first side conductive members 120 and the second side conductive members 130 do not overlap. From the side view of the substrate 110, refer to Figure 3 , along the first direction XX, there is a staggered arrangement of the first side conductive member 120, the second side conductive member 130, the first side conductive member 120, the second side conductive member 130, and so on. The connecting member 140 is arranged between adjacent first side conductive members 120 and second side conductive members 130 to connect the spaces on both sides. The openings at both ends of the connecting member 140 are one close to the first side conductive member 120 and the other close to the second side conductive member 130 adjacent to the first side conductive member 120. There can be multiple connecting members 140, and the connecting members 140 can be arranged in a one-to-one correspondence with the first side conductive members 120, and at the same time, in a one-to-one correspondence with the second side conductive members 130. The connecting member 140 can be a ceramic tube.

[0032] Typically, high-voltage silicon stacks generate three heat dissipation components during operation. The first is diode forward power dissipation, the primary source of heat generation. This is the product of the forward voltage drop, forward operating current, and number of chips within a high-voltage silicon stack. The second is reverse leakage current power dissipation, which is the product of the reverse withstand voltage, reverse leakage current, and number of chips within a single chip. At room temperature, this power dissipation is minimal, making it a minor heat-generating factor. However, as temperature rises, the semiconductor's intrinsic excitation intensifies, causing the reverse leakage current to increase exponentially. When insufficient heat dissipation causes the temperature to exceed a critical value, reverse power dissipation increases dramatically, while the reverse breakdown voltage drops rapidly, creating a vicious cycle of "temperature rise-power dissipation-temperature rise," ultimately leading to reverse thermal breakdown failure. The third is switching loss under high-frequency operating conditions, which stems from the charge and discharge of the diode junction capacitance and the carrier storage effect. Its value is related to the switching frequency and junction capacitance parameters. Temperature changes significantly affect carrier mobility, thereby altering the switching loss characteristics.

[0033] The high-voltage silicon stack 10 provided in the present application has a staggered arrangement of the first-side conductive members 120 and a staggered arrangement of the second-side conductive members 130. When the overall spatial dimensions remain unchanged, the number of conductive members can be greater, thereby improving the performance of the high-voltage silicon stack 10. A more complex heat dissipation channel can be formed between the conductive members on the same side, resulting in a better heat dissipation effect. The staggered arrangement of the first-side conductive members 120 and the second-side conductive members 130 along the second direction YY makes the heat distribution in the high-voltage silicon stack 10 more uniform. The connecting member 140 is arranged between the adjacent first-side conductive members 120 and the second-side conductive members 130 to ensure the circulation of heat on both sides of the substrate 110, further improving the uniformity of heat distribution. One connecting member 140 can correspond to one first-side conductive member 120 and one second-side conductive member 130, which has a simpler and more compact structure, higher space utilization, and can better meet the needs of small volume and high power.

[0034] For example, with reference to Figure 1 、 Figure 2 and Figure 5 , multiple first-side conductive members 120 can be arranged in at least two columns, the axes of the first-side conductive members 120 in each column meet the parallel condition, and the axes of the first-side conductive members 120 in two adjacent columns have an angle. The axis can be understood as the length direction of the conductive member. Or, from the perspective of the pins of the conductive member, the axis can be understood as follows: each conductive member has a first pin and a second pin, and a connecting line is formed between the connecting end of the first pin and the connecting end of the second pin, and the axis is perpendicular to the connecting line and parallel to the substrate 110. In this way, the first-side conductive members 120 in each column are parallel to each other, but the angles of the first-side conductive members 120 in two adjacent columns are different. The arrangement of the first-side conductive members 120 is more reasonable, and the heat dissipation effect is better. With Figure 5Taking the embodiment and perspective shown in as an example, the first side conductive elements 120 include three columns, and the inclination directions of the first side conductive elements 120 in the three columns are different. Specifically, the axes of the first side conductive elements 120 in the first and second columns from top to bottom have the same angle with the first direction XX (but in different directions), and the angle can both be 60°. The axis of the first side conductive elements 120 in the third column can be perpendicular to the first direction XX.

[0035] For example, with reference to Figure 1 、 Figure 2 and Figure 6 , multiple second side conductive members 130 can be arranged in at least two columns, the axes of the second side conductive members 130 in each column can meet the parallel condition, and the axes of the second side conductive members 130 in two adjacent columns can have an angle. In this way, the first side conductive members 120 in each column are parallel to each other, but the angles of the first side conductive members 120 in two adjacent columns are different. The arrangement of the second side conductive members 130 is more reasonable, and the heat dissipation effect is better. Figure 6 Taking the embodiment and perspective shown in as an example, the second-side conductive elements 130 include three columns, and the inclination directions of the second-side conductive elements 130 in the three columns are different. Specifically, the axes of the second-side conductive elements 130 in the first and second columns from top to bottom have the same angle with the first direction XX (but in different directions), and the angle can be 60°. The axis of the second-side conductive elements 130 in the third column can be perpendicular to the first direction XX.

[0036] For example, in combination Figure 2 、 Figure 5 and Figure 6 , the number of columns of the second-side conductive elements 130 can be the same as the number of columns of the first-side conductive elements 120 and each column is in a one-to-one correspondence, that is, Figure 5 The first column from top to bottom (i.e. the top column) and Figure 6 The first row (i.e., the bottom row) from bottom to top is located on opposite sides of the same portion of the substrate 110. The axes of the first side conductive elements 120 and the second side conductive elements 130 in these two rows form an angle. This further optimizes the layout and improves the heat dissipation effect.

[0037] For example, referring to Figure 1 、 Figure 2 and Figure 3 The first direction XX can be the lengthwise direction of the substrate 110. This facilitates heat conduction along the lengthwise direction of the substrate 110, providing more space and paths for heat dissipation. This effectively reduces the operating temperature of the first-side conductive member 120 and the second-side conductive member 130, improving the operating performance and stability of the first-side conductive member 120 and the second-side conductive member 130. This improves space utilization and increases the rectification capacity of the high-voltage silicon stack 10 without increasing the size of the substrate 110.

[0038] For example, with reference to Figure 1 and Figure 7 A ceramic thermal pad 150 is attached to both the side of the first-side conductive element 120 facing away from the substrate 110 and the side of the second-side conductive element 130 facing away from the substrate 110. The ceramic thermal pad 150 has excellent thermal conductivity and can quickly dissipate heat generated by the first-side conductive element 120 and the second-side conductive element 130 during operation, preventing performance degradation or damage to the first-side conductive element 120 and the second-side conductive element 130 due to overheating, thereby improving the stability and reliability of the high-voltage silicon stack 10. Furthermore, the ceramic material also has insulating properties, which can isolate static electricity, preventing the impact of static electricity on the high-voltage silicon stack 10 and ensuring its normal operation. The ceramic thermal pad 150 has higher mechanical strength and can buffer mechanical stress between the thermal pad and other structural components, reducing the risk of damage caused by vibration, impact, etc. For example, one side of the ceramic thermal pad 150 can be copper-clad and welded to the corresponding first-side conductive element 120 or second-side conductive element 130, while the other side can also be copper-clad and welded to the heat sink 160.

[0039] For example, with reference to Figure 1 、 Figure 2 and Figure 7 A heat sink 160 can be attached to the side of the ceramic thermally conductive sheet 150 facing away from the substrate 110. This increases the heat dissipation area and thermal conductivity, further enhancing the heat dissipation effect and rapidly dissipating heat from the ceramic thermally conductive sheet 150 to the surrounding environment, effectively reducing the operating temperature of the first-side conductive element 120 and the second-side conductive element 130. Furthermore, the heat sink 160 can even out the temperature, making heat distribution more uniform between the first-side conductive elements 120 and the second-side conductive elements 130 in the high-voltage silicon stack 10, avoiding local overheating and thereby improving the stability and reliability of the high-voltage silicon stack 10, ensuring its normal operation under high-load and long-term operating conditions.

[0040] For example, with reference to Figure 1 、 Figure 3 and Figure 7The heat sink 160 may include a first sphere 1610 and a second sphere 1620 connected to the first sphere 1610. A first contact surface may be formed on one side of the first sphere 1610 and is in contact with the ceramic heat conductive plate 150. A second contact surface may be formed on the end of the first sphere 1610 away from the first contact surface. A third contact surface may be formed on the end of the second sphere 1620 facing the second contact surface and is in contact with the second contact surface. The heat sink 160 configured in this way has a spherical structure and a smooth curved surface, which can reduce electric field distortion and adjust the electric field distribution. The spherical structure can dissipate heat more evenly and has a larger surface area, effectively improving heat dissipation efficiency. In addition, the structure of the heat sink 160 configured in this way is more rounded, and the resistance when air flows through it is smaller, thereby improving the cooling effect. The first sphere 1610 and the second sphere 1620 can be connected and arranged along the second direction YY. The heat sink 160 can be made of copper metal material. The heat sink 160 can be a double copper ball structure. The heat sink 160 can be connected to the corresponding first-side conductive member 120 or second-side conductive member 130 via bolts. Specifically, the bolts can pass through the first-side conductive member 120 (or second-side conductive member 130), the electromagnetic heat conductive sheet, and extend into the heat conductive member to secure it. For example, the base plate 110 can be provided with bolt holes. The first, second, and third contact surfaces can increase the contact area, further ensuring heat transfer efficiency.

[0041] For example, with reference to Figure 2 、 Figure 5 and Figure 6 The orthographic projections of the plurality of first-side conductive elements 120 on the substrate 110 and the orthographic projections of the plurality of second-side conductive elements 130 on the substrate 110 may not overlap. This allows for a more dispersed distribution of heat sources (i.e., the first-side conductive elements 120 and the second-side conductive elements 130) across the entire high-voltage silicon stack 10, preventing localized overheating. For example, in embodiments in which heat sinks 160 are provided, the orthographic projections of heat sinks 160 located on different sides of the substrate 110 may not overlap.

[0042] For example, with reference to Figure 1 and Figure 4, a packaged thermal conductor 170 may be provided on the outside of the substrate 110, and the packaged thermal conductor 170 may be filled with a first filler and a second filler. The sizes of the first filler and the second filler may be different. The substrate 110, the first side conductive member 120 and the second side conductive member 130 may all be located in the packaged thermal conductor 170, and the connecting member 140 may be provided through the packaged thermal conductor 170. The first filler and the second filler are insulating thermal conductive materials of different particle sizes. The packaged thermal conductor 170 may be an epoxy resin. In an embodiment in which a thermal conductor is provided, part of the structure of the thermal conductor may be located inside the packaged thermal conductor 170, and part of the structure may be located outside the packaged thermal conductor 170. The provision of the packaged thermal conductor 170 can effectively isolate the various structural components in the high-voltage silicon stack 10, prevent leakage and short circuit phenomena, ensure the safe and stable operation of the high-voltage silicon stack 10 in a high-voltage environment, and improve its electrical insulation performance and reliability. In addition, it provides mechanical support and protection for the internal chips and circuits, can buffer external impact and vibration, reduce the possibility of damage or loose circuit connections caused by external forces, and enhance the overall mechanical strength of the high-voltage silicon stack 10. A better filling effect can reduce the thermal conductivity of the material and improve its thermal stability. The setting of the first filler and the second filler can fill the pores of each other, and the small-sized filler can enter the gap between the large-sized fillers, thereby improving the density and uniformity of the packaged thermal conductor 170 and making the structure more stable. The combination of the two sizes of fillers can form an internal thermal bridge, which allows for faster heat transfer and better thermal conductivity.

[0043] For example, the inner wall of the connecting member 140 may be provided with air guide ribs, which are arranged in a spiral pattern along the second direction YY. The provision of the air guide ribs can direct the airflow within the connecting member 140 in a specific direction, avoid airflow turbulence, improve airflow stability and controllability, and ensure airflow on opposite sides of the substrate 110. This optimizes the airflow path, reduces airflow resistance within the connecting member, reduces energy loss, and improves gas flow efficiency.

[0044] For example, an electrode nut may be provided on the substrate 110 for connecting to an external circuit.

[0045] In the description of the present invention, it should be understood that the directions or positional relationships indicated by directional words such as "front", "back", "up", "down", "left", "right", "horizontal", "vertical", "vertical", "horizontal", "top", "bottom", etc. are usually based on the directions or positional relationships shown in the accompanying drawings. They are only for the convenience of describing the present invention and simplifying the description. Unless otherwise specified, these directional words do not indicate or imply that the device or element referred to must have a specific direction or be constructed and operated in a specific direction. Therefore, they cannot be understood as limiting the scope of protection of the present invention; the directional words "inside" and "outside" refer to the inside and outside relative to the outline of each component itself.

[0046] For ease of description, area-relative terms such as "above", "above", "on the upper surface of", "above", etc. may be used herein to describe the regional positional relationship between one or more components or features shown in the figures and other components or features. It should be understood that area-relative terms include not only the orientation of the components as described in the figures, but also different orientations during use or operation. For example, if the components in the drawings are inverted as a whole, the situation where the components are "above other components or features" or "above other components or features" will include the situation where the components are "below other components or structures" or "below other components or structures". Therefore, the exemplary term "above" can include both the orientations of "above" and "below". In addition, these components or features can also be positioned at other different angles (for example, rotated 90 degrees or other angles), and this document is intended to include all of these situations.

[0047] It should be noted that the terms used herein are only for describing specific embodiments and are not intended to limit the exemplary embodiments according to the present application. As used herein, unless the context clearly indicates otherwise, the singular form is also intended to include the plural form. In addition, it should be understood that when the terms "comprise" and / or "include" are used in this specification, they indicate the presence of features, steps, operations, parts, components and / or combinations thereof.

[0048] It should be noted that the terms "first," "second," and the like in the specification and claims of this application and the accompanying drawings are used to distinguish similar objects and are not necessarily used to describe a specific order or precedence. It should be understood that the terms used in this manner are interchangeable where appropriate, so that the embodiments of the present application described herein can be implemented in an order other than that illustrated or described herein.

[0049] The present invention has been described through the above-described embodiments. However, it should be understood that the above-described embodiments are for illustrative and illustrative purposes only and are not intended to limit the present invention to the described embodiments. Furthermore, it will be understood by those skilled in the art that the present invention is not limited to the above-described embodiments and that various variations and modifications may be made based on the teachings of the present invention, all of which fall within the scope of the present invention. The scope of protection of the present invention is defined by the appended claims and their equivalents.

Claims

1. A high-voltage silicon stack, characterized in that: include: a substrate having a first side and a second side opposite to each other; a plurality of first-side conductive elements, at least some of which are staggered along a first direction on the first side surface; a plurality of second-side conductive elements, at least some of which are staggeredly arranged on the second side surface along the first direction; as well as a connecting piece, the connecting piece being cylindrical and passing through the substrate; In which, multiple first-side conductive members and multiple second-side conductive members are staggered along the second direction, the connecting member is arranged between the first-side conductive member and the adjacent second-side conductive member, the second direction meets the perpendicular condition with the substrate, and the second direction meets the perpendicular condition with the first direction.

2. The high voltage silicon stack according to claim 1, characterized in that: The plurality of first-side conductive elements are arranged in at least two columns, the axes of the first-side conductive elements in each column are parallel, and the axes of the first-side conductive elements in two adjacent columns form an angle.

3. The high voltage silicon stack according to claim 2, characterized in that: The plurality of second-side conductive elements are arranged in at least two columns, the axes of the second-side conductive elements in each column are parallel, and the axes of the second-side conductive elements in two adjacent columns form an angle.

4. The high voltage silicon stack according to claim 1, wherein: The first direction is the length direction of the substrate.

5. The high voltage silicon stack according to claim 1, wherein: A ceramic heat conducting sheet is attached to a side of the first-side conductive member facing away from the substrate and a side of the second-side conductive member facing away from the substrate.

6. The high voltage silicon stack according to claim 5, characterized in that: A heat sink is attached to the side of the ceramic heat conducting plate facing away from the substrate.

7. The high-voltage silicon stack according to claim 6, characterized in that: The heat sink includes a first sphere and a second sphere connected to the first sphere. A first contact surface is formed on one side of the first sphere and is in contact with the ceramic thermal conductive plate. A second contact surface is formed on the end of the first sphere away from the first contact surface. A third contact surface is formed on the end of the second sphere facing the second contact surface and is in contact with the second contact surface.

8. The high-voltage silicon stack according to claim 1, wherein: The orthographic projections of the plurality of first-side conductive elements on the substrate and the orthographic projections of the plurality of second-side conductive elements on the substrate have no overlapping portion.

9. The high-voltage silicon stack according to claim 1, wherein: A packaged heat-conducting member is provided on the outer side of the substrate, and the packaged heat-conducting member is filled with a first filler and a second filler, and the first filler and the second filler have different sizes. The substrate, the first side conductive member and the second side conductive member are all located in the packaged heat-conducting member, and the connecting member is provided through the packaged heat-conducting member.

10. The high voltage silicon stack according to claim 1, wherein: The inner wall of the connecting piece is provided with air guiding ribs, and the air guiding ribs are spirally arranged along the second direction.

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