A package wire bonding structure and a package wire bonding method

Abstract

The present application relates to a kind of encapsulation wire bonding structure and encapsulation wire bonding method, according to the density of single solder joint wire bonding is layered wire bonding.Low-density solder joint is directly wire bonding and is isolated by a layer of plastic encapsulation body plastic encapsulation;High-density solder joint is layered by staggered conductive member, and the area of solder joint is expanded using conductive extension part, so that the wire bonding density of high-density solder joint after staggered is reduced, and the problem of wire bonding process and subsequent process short circuit is not generated.The wire bonding method of multi-layer layered wire bonding and respectively plastic encapsulation isolation makes the wire bonding of each density level operate in a single isolated layer, not only the wire bonding density of single solder joint is reduced, but also the wire bonding density between wires is reduced, which simplifies the operation of wire bonding and improves the reliability.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of semiconductor packaging, in particular to a packaging wire bonding structure and a packaging wire bonding method. BACKGROUND

[0002] In the existing PoP packaging, two large copper sheets are pasted on the substrate, and after the molding technology, the surface is ground to expose the copper sheet, and then an inductor is pasted on the surface for normal function. However, the packaging structure has the following problems: 1. A large amount of copper sheets are needed, the cost of copper sheets is high, and the production cost is significantly increased. 2. The operation difficulty is large, the plastic encapsulating material on the copper sheet needs to be ground evenly to ensure that multiple sites can be electrically connected with the inductor. In addition, in the existing packaging structure, a large number of wires need to be bonded, which is easy to cause local wire density to be too high, on the one hand, it is easy to cause short circuit of the wire, and the product is scrapped; on the other hand, the operation difficulty is extremely large in the actual wire bonding process, and a machine with extremely high precision is needed to complete the precise function, which greatly limits the industrial production application.

[0003] As shown in Figure 1 The substrate 2 carries a chip 1, the chip 1 has a first welding point 11, the substrate 2 has a second welding point 21, and the first welding point 11 and the second welding point 21 are electrically connected by wire bonding. As can be seen from the figure, a plurality of wires need to be bonded between some first welding points 11 and second welding points 21, and the size of the first welding point 11 and the second welding point 21 is limited, so the operation difficulty of such high-density wire bonding is extremely large, and it is easy to cause short circuit of the wire during the wire bonding process and subsequent process.

[0004] Through retrieval, there are related technical documents of packaging wire bonding structure in the prior art. For example, the utility model patent authorization announcement file with the name "columnar bump wire bonding structure of semiconductor chip" with the publication number "CN202423264U" discloses a columnar bump wire bonding structure of semiconductor chip, which comprises a carrier plate and a chip. The chip is arranged on the carrier plate, and the chip has a plurality of columnar bumps. The plurality of columnar bumps are electrically connected to the welding points on the carrier plate by a plurality of wires. Since the adjacent columnar bumps have different heights, the horizontal height of the first welding points of the adjacent wires is different, so that the positions of the first welding points are staggered and the intervals are increased. The prior art solution uses columnar bumps to separate the intervals of the adjacent first welding points, solves the problem that the wires intersect in a certain two-dimensional plane, and can avoid short circuit of the wires and reduce the wire bonding density between the wires. However, it cannot solve the problem that a plurality of wires need to be bonded between the two welding points at the same time. SUMMARY

[0005] In view of the deficiencies of the prior art, the application provides a packaging wire structure, which comprises a chip and a substrate, the chip is provided with first soldering points, the substrate is provided with second soldering points, and each of the first soldering points and the second soldering points is provided with an up-extended staggered layer conductive member, the top end of the staggered layer conductive member is provided with a conductive extension part, and the first soldering points and the second soldering points not connected with the staggered layer conductive members are connected by a first wire layer; the structure further comprises at least one plastic sealing body, the first wire layer is isolated by the first plastic sealing body, the conductive extension part is exposed on the upper surface of the first plastic sealing body, and a second wire layer is formed by wire connection between the conductive extension parts.

[0006] Further, the plastic sealing body has an N-layered structure, the staggered layer conductive members have N-1 different heights, the conductive extension parts of the staggered layer conductive members connected by an Nth wire layer are extended upward to the lower surface of the Nth plastic sealing body, and the Nth wire layer is isolated by the Nth plastic sealing body.

[0007] Further, the staggered layer conductive member comprises micro-channels vertically distributed in the plastic sealing body and conductive bodies formed by solidification of conductive slurry filled in the micro-channels, the top end of the micro-channel is a recessed part, and the conductive body in the recessed part constitutes the conductive extension part.

[0008] Alternatively, the staggered layer conductive member comprises thick copper wires vertically distributed in the plastic sealing body, and the top part of the thick copper wires is provided with a ball or a connecting pad to form the conductive extension part.

[0009] The application further provides a packaging wire method, which is characterized in that the wire connection is layered according to the wire connection density of the first soldering points and the second soldering points, and the specific steps are as follows:

[0010] Low-density wire connection S1, the first layer wire connection is performed between the first soldering points and the second soldering points with low density, respectively, and the first wire layer is isolated by the first plastic sealing body;

[0011] High-density wire connection S2, the staggered layer conductive members are formed within the space range of the first plastic sealing body, the bottom end of the staggered layer conductive members is connected with the first soldering points and the second soldering points with high density, respectively, the top end of the staggered layer conductive members is extended to the upper surface of the first plastic sealing body, the conductive extension parts are formed at the top end of the staggered layer conductive members, and the wire connection is performed between the conductive extension parts to connect the first soldering points and the second soldering points with high density.

[0012] Further, in the step of high-density wire connection S2, the wire connection is layered according to the wire connection density grade of the first soldering points and the second soldering points, and the specific steps are as follows:

[0013] The soldering point staggered layer S21 forms the staggered layer conductive member with the same height in the space range of the previous layer of the plastic package, and the bottom end of the staggered layer conductive member is connected with the first soldering point and the second soldering point of the current wire bonding density, and the top end is exposed on the upper surface of the space range of the previous layer of the plastic package, and whether the conductive extension part is formed on the top end of the staggered layer conductive member is determined according to the current wire bonding density.

[0014] The staggered layer wire bonding S22 is wire-bonded between the top end of the staggered layer conductive member or the conductive extension part to connect the first soldering point and the second soldering point of the current wire bonding density.

[0015] Further, the staggered layer conductive member formed in the previous layer of the plastic package has the same height, which is specifically that the micro-channel connected to the first soldering point or the second soldering point is etched vertically downward on the upper surface of the previous layer of the plastic package, the conductive slurry is filled in the micro-channel, and the staggered layer conductive member is formed after solidification.

[0016] Further, the formation of the conductive extension part is specifically that the recess part is formed by expanding etching along the upper surface of the previous layer of the plastic package when etching the micro-channel to the top end, and the conductive extension part is formed after the conductive slurry is filled in the micro-channel and the recess part and solidified.

[0017] Alternatively, the staggered layer conductive member formed in the previous layer of the plastic package has the same height, which is specifically that:

[0018] In the step of low-density wire bonding S1, the first soldering point and the second soldering point which are not wire-bonded are vertically connected with the thick copper wire, and then the first wire-bonding layer of the plastic package is isolated;

[0019] In the step of high-density wire bonding S2, the previous layer of the plastic package is ground to expose the thick copper wire, and the thick copper wire is vertically connected while wire-bonding the thick copper wire of the current layer, so as to form the staggered layer conductive member with the height of the current layer.

[0020] Further, the formation of the conductive extension part is specifically that the thick copper wire is exposed after the previous layer of the plastic package is ground, and the conductive extension part is formed by ball planting or pad forming on the top end of the thick copper wire.

[0021] Compared with the prior art, the technical scheme of the present application has the following beneficial effects:

[0022] 1. The wire bonding structure and method disclosed by the present application are layered according to the density of single soldering point wire bonding. The low-density soldering point is directly wire-bonded and isolated by a layer of plastic package, and the high-density soldering point is staggered by the staggered layer conductive member, and the soldering point area is expanded by the conductive extension part, so that the high-density soldering point after staggering has a reduced wire bonding density, and the problem of wire bonding process and subsequent process short circuit is solved.

[0023] 2. The method for wire bonding of multi-layered and separated layers, which makes the wire bonding of each density level operate in a single isolated layer, reduces the wire bonding density of single solder joint and the wire-to-wire bonding density, simplifies the wire bonding operation and improves the reliability.

[0024] 3. The electrically conductive member is used to realize the wire bonding in the staggered layers, which consumes less metal than the copper sheet connection in the prior art, and has lower packaging manufacturing cost. BRIEF DESCRIPTION OF DRAWINGS

[0025] Figure 1 Prior art packaging wire bonding structure

[0026] Figure 2 Three-layer wire bonding structure diagram

[0027] Figure 3 First layer wire bonding internal structure diagram Figure 1 ;

[0028] Figure 4 First layer wire bonding internal structure diagram Figure 1 ;

[0029] Figure 5 Second layer wire bonding internal structure diagram

[0030] Figure 6 Third layer or top layer wire bonding internal structure diagram

[0031] Figure 7 First layer wire bonding internal structure diagram Figure 2 ;

[0032] Figure 8 First layer wire bonding internal structure diagram Figure 2 ;

[0033] Figure 9 First layer wire bonding internal structure diagram

[0034] Figure 10 Second layer, third layer or top layer wire bonding internal structure diagram DETAILED DESCRIPTION

[0035] The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative labor fall within the scope of protection of the present application.

[0036] The basic structure of the packaging wire bonding proposed in the present application is as followsFigure 2 and Figure 5 As shown in the figure. Including chip (1) and substrate (2), the chip (1) has a first solder joint (11), the substrate (2) has a second solder joint (21), there are upward extending staggered conductive members (5) on at least one first solder joint (11) and at least one second solder joint (21) respectively, the top end of the staggered conductive member (5) has a conductive extension (51), the first solder joint (11) and the second solder joint (21) between which the staggered conductive member (5) is not connected are connected by wire to form a first wire layer (41); It also includes at least one layer of plastic package (3), the first wire layer (41) is isolated by the first layer of plastic package (31), the conductive extension (51) is exposed on the upper surface of the first layer of plastic package (31), and the second wire layer (42) is formed by wire between the conductive extension (51).

[0037] Specifically, under the packaging wire structure, the wire between the solder joints is at least divided into two layers. The low-density first solder joint (11) and the second solder joint (21) are directly connected by wire in the first wire layer (41), and are isolated by the first layer of plastic package (31). In this way, the wire between the low-density solder joints is completely isolated, while the high-density solder joints are extended upward by staggered conductive members (5), and since the top of the conductive extension (51) has a larger surface area than the solder joint, multiple wire operations can be easily performed on a single conductive extension (51). The wire between the high-density solder joints is operated between the conductive extensions (51) and above the low-density wire layer, the wire operation is simplified and the reliability is higher, and the wire between the high-density solder joints has no effect on the wire in the low-density wire layer which has been isolated by plastic packaging.

[0038] In a more preferred embodiment, for the high-density wire layer, a multi-layer layered wire structure is proposed. That is, the plastic package (3) has an N-layer stacked structure, the staggered conductive members (5) have N-1 different heights, the conductive extensions (51) of the staggered conductive members (5) connected by the Nth wire layer (4N) extend upward to the lower surface of the Nth layer of plastic package (3N), and the Nth wire layer (4N) is isolated by the Nth layer of plastic package (3N).

[0039] Specifically, still can see Figure 2, the whole adopts three layers of wire bonding structure. The first layer is a low-density solder joint wire bonding layer, which is directly wire bonded as described in the above embodiment and is isolated by the first layer of plastic encapsulation body (31). Correspondingly, the second layer is a second wire bonding layer (42) with medium density, and the corresponding two end solder joints are extended to the second layer by the staggered conductive member (5), and the wire bonding between the corresponding conductive extension parts (51) forms the second wire bonding layer (42), and this layer is isolated by the second layer of plastic encapsulation body (32). The high-density wire bonding layer is the third layer, that is, the top layer, and the corresponding staggered conductive member (5) is extended to the lower surface of this layer. Similarly, the wire bonding between the corresponding conductive extension parts (51) forms the third wire bonding layer (43). This layer is the top layer, and after the wire bonding of this layer is completed, the third layer of plastic encapsulation body (33) can be used for plastic encapsulation isolation of this layer. The layered wire bonding structure staggered wire bonding of different density levels and expansion of the wire bonding area on the top surface of the staggered conductive member (5) by the conductive extension part (51) as needed, thereby simplifying the operation of high-density wire bonding. The wire bonding layers of different densities are isolated by separate plastic encapsulation, so that the wire bonding operation of the current layer will not have any effect on the lower wire bonding layer, greatly improving the reliability.

[0040] For the staggered conductive member (5) and the conductive extension part (51), one of the embodiments can refer to Figure 5 . The staggered conductive member (5) is formed by filling the conductive slurry in the microchannel (52) etched to form, and the conductive body (53) leads the staggered solder joints to the current wire bonding layer. The conductive extension part (51) is etched to form a recess (54) at the top of the microchannel (52), which has a larger surface area than the microchannel (52). After filling the conductive slurry into the recess (54), the solidified conductive body (53) will form the conductive extension part (51).

[0041] Another embodiment of the staggered conductive member (5) and the conductive extension part (51) can refer to Figure 10 . The staggered conductive member (5) in this embodiment is composed of a thick copper wire (55) connected to the solder joint. The solder joint or the connection pad on the top of the thick copper wire (55) can form the conductive extension part (51), which can be understood as expanding the surface area of the thick copper wire (55).

[0042] A packaging and wire bonding method is also proposed, which is layered wire bonding according to the wire bonding density of the first solder joint (11) and the second solder joint (21). The specific steps are as follows:

[0043] As Figure 3 and Figure 4As shown, low-density wire bonding S1, the low-density first bonding pad (11) and the second bonding pad (21) are respectively bonded in the first layer, and the first bonding layer (41) is encapsulated by the first encapsulation body (31).

[0044] As shown, high-density wire bonding S2, the staggered conductive member (5) is formed in the first encapsulation body (31), the bottom end of the staggered conductive member (5) is connected to the high-density first bonding pad (11) and the second bonding pad (21), and the top end extends to the upper surface of the first encapsulation body (31). The conductive extension (51) is formed at the top end of the staggered conductive member (5), and the wire bonding is performed between the conductive extension (51) to connect the high-density first bonding pad (11) and the second bonding pad (21). Figure 5 In this embodiment, the wire bonding operation is at least divided into two layers of wire bonding. For single bonding pad with low density wire bonding, such as single wire bonding. The wire bonding operation can be directly performed in the first layer, and after connecting the first bonding pad (11) and the second bonding pad (21), the first encapsulation body (31) is used for isolation. In this way, the low-density wire bonding layer can be electrically isolated, and other wire bonding operations above this layer will not have any effect on this layer.

[0045] The high-density wire bonding layer is operated above the low-density wire bonding layer, and during the operation, the staggered conductive member (5) for leading out the staggered bonding pads is formed in the first encapsulation body (31), and the conductive extension (51) is formed at the top of the staggered conductive member (5) to expand the surface area of the high-density wire bonding pad. The conductive extension (51) will directly extend to the upper surface of the height layer where the first encapsulation body (31) is located, so that the operation of wire bonding the conductive extension (51) can be operated one layer above the first encapsulation body (31). After the wire bonding operation of the high-density wire bonding layer is completed, the second encapsulation body (32) can be used again for encapsulation.

[0046] For high-density wire bonding operation, the wire bonding density of the bonding pads may be different, and the wire bonding density between the wires may also be different or staggered. At this time, the operation of the high-density wire bonding layer can be different according to the wire bonding density. For details, see

[0047] Three layers of wire bonding operation are used in the figure. In low-density wire bonding, the low-density first bonding pad (11) and the second bonding pad (21) can be directly bonded in the first layer and encapsulated and isolated according to the low-density wire bonding S1. Figure 6

[0048] ​When high-density wire bonding is performed, the step of solder joint misalignment S21 is first performed, i.e. a misaligned conductive member (5) having the same height is formed within the space range of the previous layer of the plastic package (3), the bottom end of the misaligned conductive member (5) is connected to the first solder joint (11) and the second solder joint (21) of the current wire bonding density, and the top end is exposed on the upper surface of the previous layer of the plastic package (3). According to the current wire bonding density, it is determined whether to form a conductive extension (51) on the top end of the misaligned conductive member (5).

[0049] For example, when the density of the second layer is wire bonded, a misaligned conductive member (5) having the height of the second layer is formed within the plastic package (3) of the second wire bonding layer, i.e. the current layer. It should be noted that the misaligned conductive member (5) can be formed after the previous layer of the plastic package (3) is formed, or it can be formed before the previous layer of the plastic package (3) is formed. At this time, the misaligned conductive member (5) will extend to the height of the plastic package (3) of the second wire bonding layer, and the top end will be exposed on the upper surface of the space range of the second layer of the plastic package (3). Since the second layer of the solder joint has a medium density, it can be determined according to the actual needs whether to form a conductive extension (51) on the top end of the misaligned conductive member (5).

[0050] Then, the misaligned wire bonding S22 is continued, i.e. wire bonding is performed between the top end of the misaligned conductive member (5) or the conductive extension (51) to connect the first solder joint (11) and the second solder joint (21) of the current wire bonding density, and then the plastic package (3) is molded to form a wire bonding layer with a medium density.

[0051] The high-density wire bonding layer, i.e. the third layer of wire bonding, will continue to perform the steps of solder joint misalignment S21 and misaligned wire bonding S22, first use the misaligned conductive member (5) to lead the high-density solder joint to the third layer, then perform the third layer wire bonding operation between the conductive extensions (51), and finally mold the layer to complete the layered wire bonding.

[0052] Based on the above embodiments, there are two different embodiments for the formation method of the misaligned conductive member (5).

[0053] One of the embodiments can be seen from Figure 5 and Figure 6 The misaligned conductive member (5) having the same height is formed within the space range of the previous layer of the plastic package (3), i.e. a microchannel (52) is etched vertically downward on the upper surface of the previous layer of the plastic package (3) to communicate with the first solder joint (11) or the second solder joint (21), a conductive slurry is filled in the microchannel (52) and is solidified to form the misaligned conductive member (5).

[0054] Take the three-layer wire bonding layer as an example. Before wire bonding of the second layer, a staggered conductive member (5) with the same height needs to be formed within the space of the first layer plastic package (31). In this embodiment, after the first layer plastic package (31) has been completed, a microchannel (52) is etched vertically downward on the upper surface thereof to communicate with the first solder joint (11) or the second solder joint (21), conductive paste is filled in the microchannel (52) and solidified to form the staggered conductive member (5). After wire bonding of the second layer and isolation by the second layer plastic package (32), wire bonding of the third layer is started, the microchannel (52) is etched vertically downward on the upper surface of the second layer plastic package (31) and the staggered conductive member (5) is formed, then wire bonding of the third layer is completed, and finally the third layer is isolated by the second layer plastic package (33). Since the microchannel (52) is etched downward on the surface of the plastic package, the microchannel (52) can be etched downward continuously through the multiple plastic packages until it communicates with the solder joint. This staggered conductive member (5) is relatively simple, efficient and accurate in positioning.

[0055] In the above embodiment, the conductive extension (51) can be formed by etching during the process of manufacturing the staggered conductive member (5). Take the second layer wire bonding layer as an example. When the microchannel (52) is etched vertically downward on the top of the first layer plastic package (31), the recess (54) is formed by etching along the upper surface of the first layer plastic package (31), and the conductive extension (51) is formed by filling conductive paste in the recess (54) and solidifying. The conductive extension (51) of this embodiment is more flexible. The shape and size of the recess (54) can be selected according to the required wire bonding density. The extension direction of the recess (54) can be selected according to the direction of wire bonding. For example, the recess (54) can be formed in different shapes such as circular, rectangular, star-shaped or strip-shaped, and in different extension directions.

[0056] Unlike the above embodiment, the staggered conductive member (5) is manufactured in another way. Please refer to Figure 8 、 Figure 9 and Figure 10 . In this embodiment, the staggered conductive member (5) is formed before the plastic package is isolated. Take the third layer wire bonding as an example.

[0057] In the step of low-density wire bonding S1, the first and second bonding pads (11, 21) without wire bonding are respectively connected with the thick copper wires (55) vertically, and then the first wire bonding layer (41) is encapsulated and isolated; in the step of high-density wire bonding S2, the first layer of encapsulation body (31) is ground to expose all the thick copper wires (55). At this time, each thick copper wire (55) needs to be connected in the second layer of wire bonding, and also needs to be continued to be staggered to the third layer. After the thick copper wires (55) that need to be wire bonded are connected in the second layer of wire bonding, the thick copper wires (55) that do not need to be wire bonded are continued to be connected with the thick copper wires (55) vertically and are staggered to the third layer, and then the second layer of encapsulation body (32) is encapsulated and isolated. In the third layer of wire bonding, the same reasoning applies, and the second layer of encapsulation body (32) is ground to expose all the thick copper wires (55). Since the third layer is the top layer at this time, all the exposed thick copper wires 55 need to be wire bonded, so after they are wire bonded, the third layer of encapsulation body (33) is encapsulated and isolated. The thick copper wires (55) can be made by wire bonding equipment. Since in each layer of wire bonding layer, the bonding pads or thick copper wires 55 that do not need to be wire bonded also need to be continued to be connected with the thick copper wires (55) to be staggered and led up, the operation process of wire bonding is relatively complex. Moreover, the grinding depth will be difficult to control, because the height of the thick copper wires (55) made by wire bonding equipment may have some errors, and all the thick copper wires (55) need to be exposed during grinding. Therefore, the grinding depth will adopt the maximum grinding depth, but grinding too deep may cause the exposed or damaged wire bonding layer of the previous layer. Therefore, the precision requirement of the grinding operation is relatively high.

[0058] In the above embodiment, after the thick copper wires (55) are exposed by grinding the encapsulation body (3) of the previous layer, the ball or pad at the top of the thick copper wire (55) can form the conductive extension part (51) to expand the surface area of the top of the thick copper wire (55) and realize higher-density wire bonding.

[0059] It should be noted that in this document, the terms such as first and second are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between the entities or operations. Moreover, the terms "include", "contain" or any other variant thereof are intended to cover non-exclusive inclusion, so that the process, method, article or equipment including a series of elements not only includes those elements, but also includes other elements not explicitly listed or inherent to such process, method, article or equipment. Without more limitations, the element defined by the statement "including a" does not exclude the presence of another identical element in the process, method, article or equipment including the element.

[0060] While embodiments of the application have been shown and described, it is to be understood that the embodiments described are merely exemplary of the principles and application of the present application. Numerous modifications and adaptions can be effected without departing from the spirit and scope of the present application, which is not limited to the exact construction and arrangement described. It is intended, therefore, to cover all modifications and adaptions that fall within the scope of the claims and their equivalents.

Claims

1. A wire bonding structure of a package, comprising a chip (1) having a first bonding pad (11) thereon and a substrate (2) having a second bonding pad (21) thereon, characterized in that, The first and second soldering points (11, 21) are respectively provided with upwardly extending staggered conductive members (5), the top ends of the staggered conductive members (5) are provided with conductive extensions (51), the first and second soldering points (11, 21) between which the staggered conductive members (5) are not connected are provided with a first wire-bonding layer (41) formed by wire-bonding; the first wire-bonding layer (41) is isolated by a first layer of the encapsulation body (31), the conductive extensions (51) are exposed on the upper surface of the first layer of the encapsulation body (31), and a second wire-bonding layer (42) is formed by wire-bonding between the conductive extensions (51).

2. The package wire bonding structure of claim 1, wherein, The encapsulation body (3) has a laminated structure with N layers, the staggered conductive members (5) have N-1 different heights, the conductive extensions (51) of the staggered conductive members (5) connected by the Nth wire-bonding layer (4N) extend upwardly to the lower surface of the Nth layer of the encapsulation body (3N), and the Nth wire-bonding layer (4N) is isolated by the Nth layer of the encapsulation body (3N).

3. The package wire bonding structure of claim 2, wherein, The staggered conductive members (5) include micro-channels (52) vertically distributed in the encapsulation body (3) and conductive bodies (53) formed by solidifying conductive slurry filled in the micro-channels (52), the top ends of the micro-channels (52) are recessed portions (54), and the conductive bodies (53) in the recessed portions (54) constitute the conductive extensions (51).

4. The package wire bonding structure of claim 2, wherein, The staggered conductive members (5) include thick copper wires (55) vertically distributed in the encapsulation body (3), and the thick copper wires (55) are provided with ball bumps or connection pads at the top portions to form the conductive extensions (51).

5. A method of wire bonding for encapsulation, characterized by, The wire-bonding density of the first and second soldering points (11, 21) is layered, and the specific steps are as follows: S1, low-density wire-bonding, the first and second soldering points (11, 21) with low-density are respectively wire-bonded in the first layer, and the first wire-bonding layer (41) is encapsulated and isolated by the first layer of the encapsulation body (31); S2, high-density wire-bonding, the staggered conductive members (5) are formed in the space range of the first layer of the encapsulation body (31), the bottom ends of the staggered conductive members (5) are respectively connected to the first and second soldering points (11, 21) with high-density, the top ends of the staggered conductive members (5) extend to the upper surface of the first layer of the encapsulation body (31), the conductive extensions (51) are formed at the top ends of the staggered conductive members (5), and the first and second soldering points (11, 21) with high-density are connected by wire-bonding between the conductive extensions (51).

6. The method of claim 5, wherein the encapsulation wire is made of a material selected from the group consisting of gold, silver, copper, aluminum, and alloys thereof. In the step S2, the wire-bonding density of the first and second soldering points (11, 21) is layered, and the specific steps are as follows: S21, staggered soldering points, staggered conductive members (5) with the same height are formed in the space range of the previous layer of the encapsulation body (3), the bottom ends of the staggered conductive members (5) are respectively connected to the first and second soldering points (11, 21) with the current wire-bonding density, the top ends of the staggered conductive members (5) are exposed on the upper surface of the space range of the previous layer of the encapsulation body, and whether the conductive extensions (51) are formed at the top ends of the staggered conductive members (5) is determined according to the current wire-bonding density. Misalignment wire S22, wire between the top of the misalignment conductive member (5) or the conductive extension (51) to connect the first solder joint (11) and the second solder joint (21) of the current wire density, and the current wire layer is encapsulated with the plastic package (3).

7. The method of claim 6, wherein the wire bonding is performed by a wire bonder. Forming the misalignment conductive member (5) with the same height within the space range of the previous layer of plastic package (3), that is, etching the microchannel (52) vertically downward from the upper surface of the previous layer of plastic package (3) to form a microchannel (52) connected to the first solder joint (11) or the second solder joint (21), filling the conductive slurry in the microchannel (52) and allowing it to solidify to form the misalignment conductive member (5).

8. The method of claim 7, wherein the wire bonding is performed by a wire bonder. The formation of the conductive extension (51) is specifically to form a recess (54) by etching along the upper surface of the previous layer of plastic package (3) when etching the microchannel (52) to the top, and to form the conductive extension (51) after filling the conductive slurry in the microchannel (52) and the recess (54) and solidifying.

9. The method of claim 6, wherein the wire bonding is performed by a wire bonder. Forming the misalignment conductive member (5) with the same height within the space range of the previous layer of plastic package (3) is specifically: In the step of low-density wire S1, the first solder joint (11) and the second solder joint (21) without wire are respectively connected with thick copper wire (55) vertically, and then the first wire layer (41) is encapsulated to isolate; In the step of high-density wire S2, the thick copper wire (55) is exposed by grinding the plastic package (3) of the previous layer, and the thick copper wire (55) that does not need to be wired is continued to be connected with thick copper wire (55) vertically after the thick copper wire (55) of the current layer is wired, so as to form the misalignment conductive member (5) with the height of the current layer.

10. The method of claim 9, wherein the wire bonding is performed after the encapsulation. The formation of the conductive extension (51) is specifically to form the conductive extension (51) by ball planting or pad forming on the top of the thick copper wire (55) after the thick copper wire (55) is exposed by grinding the plastic package (3) of the previous layer.

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