Modular sip transmit-receive assembly based on HTCC

Abstract

The invention discloses a modular sip transceiver assembly based on HTCC, and belongs to the technical field of satellite communication. The modular transceiver assembly mainly comprises two radio frequency front end sip modules, two secondary frequency conversion sip modules, two local oscillator carrier plate sip modules, a power supply and an FPGA control module. The whole assembly mainly comprises five radio frequency systems and four receiving channels which are completely the same and are almost consistent with the other transmitting channel in structure, modular design is adopted, a mature microwave substrate processing technology is combined with an existing micro-assembly process, and through an HTCC ceramic tube shell and a sip technology, surface mounting application of a microwave 3D module is achieved, and meanwhile light-weight and small-size design is achieved. According to the three-dimensional stacked packaging, various passive devices can be subjected to interlayer integration, the assembly integration level is greatly improved, an expected complete machine system can be verified more quickly and flexibly, especially for a multi-path system, only a single module needs to be used for testing in the earlier stage, and the three-dimensional stacked packaging module is suitable for various communication occasions.

Description

Technical Field

[0001] The present invention relates to the technical field of satellite communication, and particularly relates to a modular sip transceiver component based on HTCC, which can be used for satellite communication microwave channel equipment. Background Art

[0002] With the rapid development of radar communication, active phased arrays are widely used in radar detection, electronic detection and other fields due to their high reliability, fast response speed and strong anti-interference ability.

[0003] At present, the antenna array of an active phased array radar is composed of multiple groups of antenna units. The core of its antenna is hundreds of transceiver components. By adjusting the phase of the transmitted and received signals of the shifters in each transceiver component respectively, the scanning of the radar beam can be achieved. Each transceiver component includes a group of small transmitters, receivers, phase shifters, etc. Traditional transceiver components use hybrid IC circuits and monolithic integrated circuits. For example, the published document with the publication number CN208872870U, the publication date of May 17, 2019, and the patent name "Radar Device" discloses a radar device, which can further reduce the loss in the waveguide from the microwave IC to the transceiver antenna. The circuit board has an assembly surface on which microwave integrated circuit elements are installed. The microwave integrated circuit elements have a plurality of terminals including first and second antenna input / output terminals. The connector connects the first and second antenna input / output terminals to the waveguide device. The connector has a first conductive body part connected to the first antenna input / output terminal, a second conductive body part connected to the second antenna input / output terminal, and a strip-shaped gap where the end face of the first conductive body part faces the end face of the second conductive body part. The strip-shaped gap has a narrow part where the distance between the end face of the first conductive body part and the end face of the second conductive body part becomes locally smaller. The connector couples the electromagnetic field of the narrow part to the waveguide of the waveguide device.

[0004] Although it can greatly reduce the weight and volume of the system, the transceiver component has complex functions and requires a large number of monolithic integrated circuits, and the heterogeneous integration is difficult. With the improvement of the chip complexity and chip packaging technology, the packaging scale of monolithic integrated circuits is getting larger and larger, which can no longer meet the miniaturization requirements. Monolithic chips are gradually developing towards large-scale and multi-chip directions. Compared with the large volume and weight of traditional transceiver components, the main difference of sip technology lies in the use of "multiple bare chips" and "multi-layer wiring substrates" and the realization of "high-density interconnection". High integration is an inevitable trend for the miniaturization of radar phased array components, and system in package (sip) is one of the effective methods to improve the integration degree. Summary of the Invention

[0005] The technical problem to be solved by the present invention is to implement a modular SIP transceiver component based on HTCC, which has characteristics such as miniaturization and high integration.

[0006] To achieve the above object, the technical solution adopted by the present invention is: a modular SIP transceiver component based on HTCC, whose receiving channel includes a radio frequency front-end SIP module 1, a second-stage frequency conversion SIP module 1, a band-pass filter 1, an equalizer 1, a numerically controlled attenuator 1, an amplifier 1, and an attenuator 1. The output of the radio frequency front-end SIP module 1 is connected to the second-stage frequency conversion SIP module 1, the output of the second-stage frequency conversion SIP module 1 is connected to the band-pass filter 1, the output of the band-pass filter 1 is connected to the equalizer 1, the output of the equalizer 1 is connected to the numerically controlled attenuator 1, the output of the numerically controlled attenuator 1 is connected to the amplifier 1, the output of the amplifier 1 is connected to the attenuator 1, and the output of the attenuator 1 is the output of the receiving channel.

[0007] Furthermore, for the above-mentioned modular SIP transceiver component based on HTCC, the transmitting channel includes a radio frequency front-end SIP module 2, a second-stage frequency conversion SIP module 2, a band-pass filter 2, an equalizer 2, a numerically controlled attenuator 2, an amplifier 2, and an attenuator 2. The output of the attenuator 2 is connected to the amplifier 2, the output of the amplifier 2 is connected to the numerically controlled attenuator 2, the output of the numerically controlled attenuator 2 is connected to the equalizer 2, the output of the equalizer 2 is connected to the band-pass filter 2, the output of the band-pass filter 2 is connected to the second-stage frequency conversion SIP module 2, the output of the second-stage frequency conversion SIP module 2 is connected to the radio frequency front-end SIP module 2, and the output of the radio frequency front-end SIP module 2 is the output of the transmitting channel.

[0008] Further, for the modular SIP transceiver component based on HTCC, the local oscillator frequency synthesizer SIP module 1 includes a reference oscillator, PLL1, power divider 1, attenuator 3, power divider 2, amplifier 3, amplifier 4, power divider 3, power divider 4, and attenuators 4 to 8. The output of the reference oscillator is connected to PLL1, the output of PLL1 is connected to power divider 1, one output of power divider 1 is connected to attenuator 3, the output of attenuator 3 is connected to power divider 2, one output of power divider 2 is connected to amplifier 3, the output of amplifier 3 is connected to power divider 3, one output of power divider 3 is connected to attenuator 4, and the output of attenuator 4 is output as received LO1-1 to the frequency multiplier 1 of the first group of second-stage frequency conversion SIP module 1. The other output of power divider 3 is connected to attenuator 5, and the output of attenuator 5 is output as received LO1-2 to the frequency multiplier 1 of the second group of second-stage frequency conversion SIP module 1. The other output of power divider 2 is connected to amplifier 4, the output of amplifier 4 is connected to power divider 4, one output of power divider 4 is connected to attenuator 6, and the output of attenuator 6 is output as received LO1-3 to the frequency multiplier 1 of the third group of second-stage frequency conversion SIP module 1. The other output of power divider 4 is connected to attenuator 7, and the output of attenuator 7 is output as received LO1-4 to the frequency multiplier 1 of the fourth group of second-stage frequency conversion SIP module 1. The other output of power divider 1 is connected to attenuator 8, and the output of attenuator 8 is output as the local oscillator of the transmit channel to the frequency multiplier 2 of the second-stage frequency conversion SIP module 2.

[0009] Further, for the modular SIP transceiver component based on HTCC, the local oscillator frequency synthesizer SIP module 2 includes a reference oscillator, PLL2, power divider 5, attenuator 9, power divider 6, amplifier 5, amplifier 6, power divider 7, power divider 8, and attenuators 10 to 14. The output of the reference oscillator is connected to PLL2, the output of PLL2 is connected to power divider 5, one output of power divider 5 is connected to attenuator 9, the output of attenuator 9 is connected to power divider 6, one output of power divider 6 is connected to amplifier 5, the output of amplifier 5 is connected to power divider 7, one output of power divider 7 is connected to attenuator 10, and the output of attenuator 10 is output as received LO2-1 to the frequency multiplier 2 of the first group of second-stage frequency conversion SIP module 2. The other output of power divider 7 is connected to attenuator 11, and the output of attenuator 11 is output as received LO2-2 to the frequency multiplier 2 of the second group of second-stage frequency conversion SIP module 2. The other output of power divider 6 is connected to amplifier 6, the output of amplifier 6 is connected to power divider 8, one output of power divider 8 is connected to attenuator 12, and the output of attenuator 12 is output as received LO2-3 to the frequency multiplier 2 of the third group of second-stage frequency conversion SIP module 2. The other output of power divider 8 is connected to attenuator 13, and the output of attenuator 13 is output as received LO2-4 to the frequency multiplier 2 of the fourth group of second-stage frequency conversion SIP module 2. The other output of power divider 5 is connected to attenuator 14, and the output of attenuator 14 is output as LO2 of the transmit channel to the mixer 4 of the second-stage frequency conversion SIP module 2.

[0010] Further, for the modular SIP transceiver component based on HTCC, both the RF front-end SIP module 1 and the RF front-end SIP module 2 are encapsulated in a 21mm×16mm×3.4mm ceramic package based on HTCC. The second-stage frequency conversion SIP module 1 and the second-stage frequency conversion SIP module 2 are both encapsulated in an 18mm×12mm×3.4mm ceramic package based on HTCC. The local oscillator frequency synthesis SIP module 1 and the local oscillator frequency synthesis SIP module 2 are both encapsulated in a 50mm×30mm×6mm ceramic package based on HTCC. At the same time, the PLL1 and PLL2 inside the local oscillator carrier board are encapsulated in a 9mm×9mm×2.2mm ceramic package based on HTCC.

[0011] Further, the RF front-end SIP module 1 is encapsulated in a 21mm×16mm×3.4mm ceramic package based on HTCC. The internal circuit includes a limiter 1, a digital control attenuator 3, an amplifier 7, a digital control attenuator 4, an amplifier 8, a temperature compensation attenuator 1, a single-pole double-throw switch 1, a switched filter bank 1, a high-pass filter 1, an equalizer 3, and an equalizer 4. The output of the limiter 1 is connected to the digital control attenuator 3. The output of the digital control attenuator 3 is connected to the amplifier 7. The output of the amplifier 7 is connected to the digital control attenuator 4. The output of the digital control attenuator 4 is connected to the amplifier 8. The output of the amplifier 8 is connected to the temperature compensation attenuator 1. The output of the temperature compensation attenuator 1 is connected to the single-pole double-throw switch 1. One output end of the single-pole double-throw switch 1 is connected to the switched filter bank 1. The output of the switched filter bank 1 is connected to the equalizer 3. The output of the equalizer 3 is connected to the single-pole double-throw switch 2. The other output end of the single-pole double-throw switch 1 is connected to the high-pass filter 1. The output of the high-pass filter 1 is connected to the equalizer 4. The output of the equalizer 4 is connected to the single-pole double-throw switch 2. The channel selection of the single-pole double-throw switch 1 and the single-pole double-throw switch 2 is controlled by the FPGA. The input end of the limiter 1 and the output end of the single-pole double-throw switch 2 are connected through vertical interconnection and backside BGA pins.

[0012] Further, the second-stage frequency conversion SIP module 1 is encapsulated in an 18mm×12mm×3.4mm ceramic package based on HTCC. The internal circuit includes an amplifier 9, a temperature compensation attenuator 2, a frequency multiplier 1, a band-pass filter 3, a mixer 1, a band-pass filter 4, an amplifier 10, and a mixer 2. The output of the amplifier 9 is connected to the temperature compensation attenuator 2. The output of the temperature compensation attenuator 2 is connected to the mixer 1. LO1 is connected to the frequency multiplier 1. The output of the frequency multiplier 1 is connected to the band-pass filter 3. The output of the band-pass filter 3 is connected to the mixer 1. The output of the mixer 1 is connected to the band-pass filter 4. The output of the band-pass filter 4 is connected to the amplifier 10. The output of the amplifier 10 is connected to the mixer 2. The local oscillator terminal of the mixer 2 is connected to LO2. The input end of the amplifier 9, the input end of the frequency multiplier 1, the local oscillator input end of the mixer 2, and the RF output end are connected through vertical interconnection and backside BGA pins.

[0013] Furthermore, the RF front-end SIP module 2 is made of a 21mm×16mm×3.4mm ceramic package based on HTCC. The internal circuit includes a digital controlled attenuator 5, an amplifier 11, a digital controlled attenuator 6, a temperature compensated attenuator 3, a single-pole double-throw switch 3, a switched filter bank 2, a high-pass filter 2, equalizers 5 and 6, a single-pole double-throw switch 4 and an amplifier 12. The output of the amplifier 12 is connected to the single-pole double-throw switch 4. One output end of the single-pole double-throw switch 4 is connected to the equalizer 5. The output of the equalizer 5 is connected to the switched filter bank 2. The output of the switched filter bank 2 is connected to the single-pole double-throw switch 3. The other output end of the single-pole double-throw switch 4 is connected to the equalizer 6. The output of the equalizer 6 is connected to the high-pass filter 2. The high-pass filter 2 is connected to the single-pole double-throw switch 3. The output of the single-pole double-throw switch 3 is connected to the temperature compensated attenuator 3. The output of the temperature compensated attenuator 3 is connected to the digital controlled attenuator 6. The output of the temperature compensated attenuator 6 is connected to the amplifier 11. The output of the amplifier 11 is connected to the digital controlled attenuator 5. The input end of the amplifier 12 and the output end of the digital controlled attenuator 5 are connected through vertical interconnection and backside BGA pins.

[0014] Furthermore, the second frequency conversion SIP module 2 is made of an 18mm×12mm×3.4mm ceramic package based on HTCC. The internal circuit includes an amplifier 14, a temperature compensated attenuator 4, a frequency multiplier 2, a band-pass filter 5, a mixer 3, a band-pass filter 6, an amplifier 13, a mixer 4 and an attenuator 15. The output of the attenuator 15 is connected to the mixer 4. The input of the mixer 4 is connected to LO2. The output of the mixer 4 is connected to the amplifier 13. The output of the amplifier 13 is connected to the band-pass filter 6. The output of the band-pass filter 6 is connected to the mixer 3. LO1 is connected to the input of the frequency multiplier 2. The output of the frequency multiplier 2 is connected to the band-pass filter 5. The output of the band-pass filter 5 is connected to the mixer 3. The output of the mixer 3 is connected to the temperature compensated attenuator 4. The output of the temperature compensated attenuator 4 is connected to the amplifier 14. The input end of the attenuator 15, the input end of the frequency multiplier 2, the local oscillator input end of the mixer 4 and the output end of the amplifier are connected through vertical interconnection and backside BGA pins.

[0015] Furthermore, both PLL1 and PLL2 are made of a 9mm*9mm*2.2mm ceramic package based on HTCC. The internal circuits of PLL1 and PLL2 are the same, including a VCO, a phase detector, a programmable frequency divider, a power splitter 9, a loop filter, a frequency multiplier 3, a single-chip microcomputer and a voltage regulator. The output of the VCO is connected to the programmable frequency divider. The programmable frequency divider is connected to the power splitter 9. One output end of the power splitter 9 is connected to the phase detector. The output of the phase detector is connected to the loop filter. The output of the loop filter is connected to the VCO. The other output end of the power splitter 9 is connected to the frequency multiplier 3. The output of the frequency multiplier 3 is the output of the PLL. The control pin of the single-chip microcomputer is connected to the phase detector.

[0016] The advantages of the present invention are as follows:

[0017] 1. The modular SIP transceiver component based on HTCC realizes the receiving and transmitting frequency conversion functions in the Ku band, provides 4 receivers and 1 transmitter, and has the advantages of high phase consistency, high gain consistency, and high isolation between channels among each channel.

[0018] 2. The RF front-end module, frequency conversion module, and local oscillator frequency synthesizer module of the present invention all adopt modular design and are repackaged with a ceramic package based on HTCC, and can be combined and designed with any number of channels according to needs. Only the matching power supply and control circuits are required on the periphery. Compared with the overall component, a single module has a shorter development cycle, lower cost, and more flexible application. Especially for a newly developed multi-channel system, using the module for functional verification first can reduce the trial-and-error cost and shorten the project cycle.

[0019] 3. Each module can achieve reconfigurable design in different frequency bands by replacing or adding / removing internal components. Indicators such as frequency, gain, and output power can all be adjusted, while the external pin definitions of the module remain unchanged, which can reduce the subsequent design work of the component and the system.

[0020] 4. The structure of the present invention is simple, the layout of each module is clear and definite, it has high maintainability, reliable performance, can work normally under harsh environment (-55°C to +85°C) conditions, has a high cost performance, and has the value of popularization and application. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] The following briefly describes the content expressed in each drawing in the specification of the present invention and the marks in the drawings:

[0022] Figure 1 It is the principle block diagram of the transceiver component of the embodiment of the present invention;

[0023] Fig. 2(a) is the shell size diagram of the RF front-end SIP module;

[0024] Fig. 2(b) is the internal principle block diagram of the shell of the RF front-end SIP module;

[0025] Fig. 3(a) is the shell size diagram of the second frequency conversion SIP module;

[0026] Fig. 3(b) is the internal principle block diagram of the shell of the second frequency conversion SIP module;

[0027] Fig. 4(a) is the shell size diagram of the RF front-end SIP module;

[0028] Fig. 4(b) is the internal principle block diagram of the shell of the RF front-end SIP module;

[0029] Fig. 5(a) is the shell size diagram of the second frequency conversion SIP module;

[0030] Fig. 5(b) is the internal principle block diagram of the shell of the second frequency conversion SIP module;

[0031] Figure 6(a) is the package size diagram of the local oscillator frequency synthesis SIP module;

[0032] Figure 6(b) is the internal principle block diagram of the package of the local oscillator frequency synthesis SIP module;

[0033] Figure 7(a) is the package size diagram of the local oscillator frequency synthesis SIP module;

[0034] Figure 7(b) is the internal principle block diagram of the package of the local oscillator frequency synthesis SIP module;

[0035] Figure 8(a) is the package size diagram of the PLL1 / PLL2;

[0036] Figure 8(b) is the internal principle block diagram of the package of the PLL1 / PLL2. Detailed implementation manners

[0037] The following will make a further detailed description of the detailed implementation manners of the present invention, such as the shapes, structures of the components involved, the mutual positions and connection relationships between the parts, the functions and working principles of the parts, the manufacturing processes, and the operation and use methods, etc., with reference to the accompanying drawings, so as to help those skilled in the art to have a more complete, accurate and in-depth understanding of the inventive concept and technical solutions of the present invention.

[0038] Generally, the SIP substrate includes organic substrates, ceramic substrates such as HTCC and LTCC, and silicon substrates. Among them, HTCC has been widely used in the SIP field due to its good chemical and physical properties such as high reliability, high integration, high thermal conductivity, and high temperature stability. The purpose of the present invention is to avoid the deficiencies in the above background technology and provide a modular SIP transceiver component based on HTCC. Using the SIP technology based on HTCC, it has the characteristics of miniaturization, light weight, high integration, high reliability, high performance, and low cost, and can meet the requirements of satellite communication equipment. This modular component belongs to the field of satellite communication technology and mainly includes two RF front-end SIP modules, two second-stage frequency conversion SIP modules, two local oscillator carrier board SIP modules, and a power supply and FPGA control module.

[0039] Specifically refer to Figure 1 -8, the modular SIP transceiver component based on HTCC, which includes an RF front-end SIP module 1, a second-stage frequency conversion SIP module 1, a band-pass filter 1, an equalizer 1, an amplifier 1, an attenuator 1, an RF front-end SIP module 2, a second-stage frequency conversion SIP module 2, a band-pass filter 2, an equalizer 2, a digital control attenuator 2, an amplifier 2, an attenuator 2, a local oscillator frequency synthesis SIP module 1, a local oscillator frequency synthesis SIP module 2, and a power supply and FPGA control module. Figure 1 is the principle block diagram of this embodiment. The embodiment is connected according to Figure 1 the connection lines.

[0040] The receiving channel includes a radio frequency front-end SIP module 1, a second-stage frequency conversion SIP module 1, a band-pass filter 1, an equalizer 1, a digital control attenuator 1, an amplifier 1, and an attenuator 1. The output of the radio frequency front-end SIP module 1 is connected to the second-stage frequency conversion SIP module 1, the output of the second-stage frequency conversion SIP module 1 is connected to the band-pass filter 1, the output of the band-pass filter 1 is connected to the equalizer 1, the output of the equalizer 1 is connected to the digital control attenuator 1, the output of the digital control attenuator 1 is connected to the amplifier 1, the output of the amplifier 1 is connected to the attenuator 1, and the output of the attenuator 1 is the output of the receiving channel.

[0041] The transmitting channel includes a radio frequency front-end SIP module 2, a second-stage frequency up-conversion SIP module 2, a band-pass filter 2, an equalizer 2, a digital control attenuator 2, an amplifier 2, and an attenuator 2. The output of the attenuator 2 is connected to the amplifier 2, the output of the amplifier 2 is connected to the digital control attenuator 2, the output of the digital control attenuator 2 is connected to the equalizer 2, the output of the equalizer 2 is connected to the band-pass filter 2, the output of the band-pass filter 2 is connected to the second-stage frequency conversion SIP module 2, the output of the second-stage frequency conversion SIP module 2 is connected to the radio frequency front-end SIP module 2, and the output of the radio frequency front-end SIP module 2 is the output of the transmitting channel.

[0042] The local oscillator frequency synthesizer SIP module 1 includes a reference crystal oscillator, a PLL1, a power divider 1, an attenuator 3, a power divider 2, an amplifier 3, an amplifier 4, a power divider 3, a power divider 4, and attenuators 4 to 8. The output of the reference crystal oscillator is connected to the PLL1, the output of the PLL1 is connected to the power divider 1, one output of the power divider 1 is connected to the attenuator 3, the output of the attenuator 3 is connected to the power divider 2, one output of the power divider 2 is connected to the amplifier 3, the output of the amplifier 3 is connected to the power divider 3, one output of the power divider 3 is connected to the attenuator 4, and the output of the attenuator 4 is used as the received LO1-1 output and sent to the frequency multiplier 1 of the first group of second-stage frequency conversion SIP modules 1. The other output of the power divider 3 is connected to the attenuator 5, and the output of the attenuator 5 is used as the received LO1-2 output and sent to the frequency multiplier 1 of the second group of second-stage frequency conversion SIP modules 1. The other output of the power divider 2 is connected to the amplifier 4, the output of the amplifier 4 is connected to the power divider 4, one output of the power divider 4 is connected to the attenuator 6, and the output of the attenuator 6 is used as the received LO1-3 output and sent to the frequency multiplier 1 of the third group of second-stage frequency conversion SIP modules 1. The other output of the power divider 4 is connected to the attenuator 7, and the output of the attenuator 7 is used as the received LO1-4 output and sent to the frequency multiplier 1 of the fourth group of second-stage frequency conversion SIP modules 1. The other output of the power divider 1 is connected to the attenuator 8, and the output of the attenuator 8 is used as the local oscillator output of the transmitting channel and sent to the frequency multiplier 2 of the second-stage frequency conversion SIP module 2.

[0043] The local oscillator frequency synthesizer SIP module 2 includes a reference crystal oscillator, PLL2, power divider 5, attenuator 9, power divider 6, amplifier 5, amplifier 6, power divider 7, power divider 8, and attenuators 10 to 14. The output of the reference crystal oscillator is connected to PLL2, the output of PLL2 is connected to power divider 5, one output of power divider 5 is connected to attenuator 9, the output of attenuator 9 is connected to power divider 6, one output of power divider 6 is connected to amplifier 5, the output of amplifier 5 is connected to power divider 7, one output of power divider 7 is connected to attenuator 10, and the output of attenuator 10 is output as received LO2-1 to the frequency multiplier 2 of the first group of second-stage frequency conversion SIP module 2. The other output of power divider 7 is connected to attenuator 11, and the output of attenuator 11 is output as received LO2-2 to the frequency multiplier 2 of the second group of second-stage frequency conversion SIP module 2. The other output of power divider 6 is connected to amplifier 6, the output of amplifier 6 is connected to power divider 8, one output of power divider 8 is connected to attenuator 12, and the output of attenuator 12 is output as received LO2-3 to the frequency multiplier 2 of the third group of second-stage frequency conversion SIP module 2. The other output of power divider 8 is connected to attenuator 13, and the output of attenuator 13 is output as received LO2-4 to the frequency multiplier 2 of the fourth group of second-stage frequency conversion SIP module 2. The other output of power divider 5 is connected to attenuator 14, and the output of attenuator 14 is output as the LO2 of the transmitting channel to the mixer 4 of the second-stage frequency conversion SIP module 2.

[0044] Both the RF front-end SIP module 1 and the RF front-end SIP module 2 are made of HTCC-based 21mm×16mm×3.4mm ceramic package. Both the second-stage frequency conversion SIP module 1 and the second-stage frequency conversion SIP module 2 are made of HTCC-based 18mm×12mm×3.4mm ceramic package. Both the local oscillator frequency synthesizer SIP module 1 and the local oscillator frequency synthesizer SIP module 2 are made of HTCC-based 50mm×30mm×6mm ceramic package. At the same time, PLL1 and PLL2 inside the local oscillator carrier board are made of HTCC-based 9mm×9mm×2.2mm ceramic package.

[0045] The RF front-end SIP module 1 is made of a ceramic package with dimensions of 21 mm × 16 mm × 3.4 mm based on HTCC. The internal circuit includes a limiter 1, a digital controlled attenuator 3, an amplifier 7, a digital controlled attenuator 4, an amplifier 8, a temperature compensated attenuator 1, a single-pole double-throw switch 1, a switched filter bank 1, a high-pass filter 1, an equalizer 3, and an equalizer 4. The output of the limiter 1 is connected to the digital controlled attenuator 3, the output of the digital controlled attenuator 3 is connected to the amplifier 7, the output of the amplifier 7 is connected to the digital controlled attenuator 4, the output of the digital controlled attenuator 4 is connected to the amplifier 8, the output of the amplifier 8 is connected to the temperature compensated attenuator 1, the output of the temperature compensated attenuator 1 is connected to the single-pole double-throw switch 1, one output of the single-pole double-throw switch 1 is connected to the switched filter bank 1, the output of the switched filter bank 1 is connected to the equalizer 3, the output of the equalizer 3 is connected to the single-pole double-throw switch 2, the other output of the single-pole double-throw switch 1 is connected to the high-pass filter 1, the output of the high-pass filter 1 is connected to the equalizer 4, and the output of the equalizer 4 is connected to the single-pole double-throw switch 2. The channel selection of the single-pole double-throw switch 1 and the single-pole double-throw switch 2 is controlled by the FPGA. The input end of the limiter 1 and the output end of the single-pole double-throw switch 2 are connected through vertical interconnection and backside BGA pins.

[0046] Furthermore, the second-stage frequency conversion SIP module 1 is made of a ceramic package with dimensions of 18 mm × 12 mm × 3.4 mm based on HTCC. The internal circuit includes an amplifier 9, a temperature compensated attenuator 2, a frequency multiplier 1, a band-pass filter 3, a mixer 1, a band-pass filter 4, an amplifier 10, and a mixer 2. The output of the amplifier 9 is connected to the temperature compensated attenuator 2, the output of the temperature compensated attenuator 2 is connected to the mixer 1, LO1 is connected to the frequency multiplier 1, the output of the frequency multiplier 1 is connected to the band-pass filter 3, the output of the band-pass filter 3 is connected to the mixer 1, the output of the mixer 1 is connected to the band-pass filter 4, the output of the band-pass filter 4 is connected to the amplifier 10, the output of the amplifier 10 is connected to the mixer 2, and the local oscillator terminal of the mixer 2 is connected to LO2. The input end of the amplifier 9, the input end of the frequency multiplier 1, the local oscillator input end of the mixer 2, and the RF output end are connected through vertical interconnection and backside BGA pins.

[0047] The RF front-end SIP module 2 is made of a ceramic package with dimensions of 21mm×16mm×3.4mm based on HTCC. The internal circuit includes a digital controlled attenuator 5, an amplifier 11, a digital controlled attenuator 6, a temperature compensated attenuator 3, a single-pole double-throw switch 3, a switched filter bank 2, a high-pass filter 2, equalizers 5 and 6, a single-pole double-throw switch 4, and an amplifier 12. The output of amplifier 12 is connected to single-pole double-throw switch 4. One output end of single-pole double-throw switch 4 is connected to equalizer 5, the output of equalizer 5 is connected to switched filter bank 2, the output of switched filter bank 2 is connected to single-pole double-throw switch 3, the other output end of single-pole double-throw switch 4 is connected to equalizer 6, the output of equalizer 6 is connected to high-pass filter 2, high-pass filter 2 is connected to single-pole double-throw switch 3, the output of single-pole double-throw switch 3 is connected to temperature compensated attenuator 3, the output of temperature compensated attenuator 3 is connected to digital controlled attenuator 6, the output of temperature compensated attenuator 6 is connected to amplifier 11, and the output of amplifier 11 is connected to digital controlled attenuator 5. The input end of amplifier 12 and the output end of digital controlled attenuator 5 are connected through vertical interconnection and back BGA pins.

[0048] The second frequency conversion SIP module 2 is made of a ceramic package with dimensions of 18mm×12mm×3.4mm based on HTCC. The internal circuit includes an amplifier 14, a temperature compensated attenuator 4, a frequency multiplier 2, a band-pass filter 5, a mixer 3, a band-pass filter 6, an amplifier 13, a mixer 4, and an attenuator 15. The output of attenuator 15 is connected to mixer 4, the input of mixer 4 is connected to LO2, the output of mixer 4 is connected to amplifier 13, the output of amplifier 13 is connected to band-pass filter 6, the output of band-pass filter 6 is connected to mixer 3, LO1 is connected to the input of frequency multiplier 2, the output of frequency multiplier 2 is connected to band-pass filter 5, the output of band-pass filter 5 is connected to mixer 3, the output of mixer 3 is connected to temperature compensated attenuator 4, and the output of temperature compensated attenuator 4 is connected to amplifier 14. The input end of attenuator 15, the input end of frequency multiplier 2, the local oscillator input end of mixer 4, and the output end of the amplifier are connected through vertical interconnection and back BGA pins.

[0049] Both PLL1 and PLL2 are made of a ceramic package with dimensions of 9mm*9mm*2.2mm based on HTCC. The internal circuits of PLL1 and PLL2 are the same, including a VCO, a phase detector, a programmable frequency divider, a power splitter 9, a loop filter, a frequency multiplier 3, a single-chip microcomputer, and a voltage regulator. The output of the VCO is connected to the programmable frequency divider, the programmable frequency divider is connected to the power splitter 9, one output end of the power splitter 9 is connected to the phase detector, the output of the phase detector is connected to the loop filter, the output of the loop filter is connected to the VCO, the other output end of the power splitter 9 is connected to the frequency multiplier 3, the output of the frequency multiplier 3 is the output of the PLL, and the control pin of the single-chip microcomputer is connected to the phase detector.

[0050] The brief working principle of the above-mentioned modular SIP transceiver component based on HTCC is as follows:

[0051] When the receiving end of the transceiver component works, the radio frequency signal enters the radio frequency front-end sip module 1 of the transceiver component through the receiving end of the antenna. The radio frequency front-end sip module 1 amplifies the received signal in the range of 0.38 - 18 GHz, and controls the single-pole double-throw switch 1 and the switch filter bank 1 through the FPGA to switch the corresponding filter channels according to different frequency ranges. Then, the signal is output to the second-stage frequency conversion sip module 1 through the single-pole double-throw switch 2. The mixer 1 of the second-stage frequency conversion sip module 1 up-converts the received signal in the range of 0.38 - 18 GHz and the double-frequency signal (22.38 - 40 GHz) of the local oscillator frequency synthesis module 1 output LO1 to 22 GHz. The mixer 2 down-converts and shifts the 22 GHz signal with the LO2 (23.8 GHz) output by the local oscillator frequency synthesis sip module 2, and then performs amplification and detection processing to obtain an intermediate frequency signal of 1.8 GHz ± 500 MHz.

[0052] When the transmitting end of the transceiver component works, first, the 1.8 GHz intermediate frequency signal is amplified and filtered, and then passes through the second-stage frequency conversion sip module 2. The mixer 4 of the second-stage frequency conversion sip module 2 up-converts the 1.8 GHz intermediate frequency signal with the LO2 (23.8 GHz) output by the local oscillator frequency synthesis sip module 2 to 22 GHz. The mixer 3 down-converts and shifts the 22 GHz signal with the double-frequency signal (22.38 - 40 GHz) of the local oscillator frequency synthesis module 1 output LO1. The FPGA controls the single-pole double-throw switch 4 and the switch filter bank 2 to switch the corresponding filter channels according to different frequency ranges, and then obtains a signal in the range of 0.38 - 18 GHz through the single-pole double-throw switch 3.

[0053] The installation structure of a modular sip transceiver component based on HTCC is as follows:

[0054] Put Figure 1 The radio frequency front-end sip module 1, the second-stage frequency conversion sip module 1, the band-pass filter 1, the equalizer 1, the digital control attenuator 1, the amplifier 1 and the attenuator 1 in are jointly installed in a cavity with a length × width × height of 135 mm × 115 mm × 20 mm. The local oscillator frequency synthesis sip module 1 and the local oscillator frequency synthesis sip module 2 are installed on the back of the cavity, and pass through the insulator to the front to provide the local oscillator signal for the second-stage frequency conversion sip module 1 and the second-stage frequency conversion sip module 2. Among them, the radio frequency front-end sip module 1, the second-stage frequency conversion sip module 1, the radio frequency front-end sip module 2 and the second-stage frequency conversion sip module 2 are installed on the module in a BGA manner. The radio frequency interface uses SSMA-J, which are 1-way transmit excitation input signal, 1-way transmit output signal, 4-way receive excitation input signals and 4-way intermediate frequency output signals respectively.

[0055] In summary, this modular component is mainly a 5-channel RF system. The 4 receiving channels are exactly the same, and are almost identical to the other transmitting channel. It adopts a modular design, combines the mature microwave substrate processing technology with the existing micro-assembly process, and through HTCC ceramic packages and SIP technology, realizes the surface-mount application of microwave 3D modules, while achieving lightweight and small-size designs. The three-dimensional stacked packaging can integrate various passive devices between layers, greatly improving the component integration degree, and can more quickly and flexibly verify the envisioned whole-machine system. Especially for multi-channel systems, single modules can be used for experiments in the early stage, and it is applicable to various communication scenarios.

[0056] The present invention has been described by way of example in conjunction with the accompanying drawings. Obviously, the specific implementation of the present invention is not limited by the above methods. As long as various non-substantive improvements are made using the method concept and technical solution of the present invention, or the concept and technical solution of the present invention are directly applied to other occasions without improvement, they are all within the protection scope of the present invention.

Claims

1. A modular SIP transceiver component based on HTCC, the transceiver component includes a receiving channel, characterized in that: The receiving channel includes a radio frequency front-end SIP module 1, a second-stage frequency conversion SIP module 1, a band-pass filter 1, an equalizer 1, a digital control attenuator 1, an amplifier 1, and an attenuator 1. The received excitation signal is input to the radio frequency front-end SIP module 1. The output of the radio frequency front-end SIP module 1 is connected to the second-stage frequency conversion SIP module 1. The output of the second-stage frequency conversion SIP module 1 is connected to the band-pass filter 1. The output of the band-pass filter 1 is connected to the equalizer 1. The output of the equalizer 1 is connected to the digital control attenuator 1. The output of the digital control attenuator 1 is connected to the amplifier 1. The output of the amplifier 1 is connected to the attenuator 1. The output of the attenuator 1 is the output of the receiving channel.

2. The modular sip transceiver component based on HTCC according to claim 1, characterized in that: The transceiver assembly includes a transmitting channel. The transmitting channel includes a radio frequency front-end SIP module 2, a second-stage frequency conversion SIP module 2, a band-pass filter 2, an equalizer 2, a digital control attenuator 2, an amplifier 2, and an attenuator 2. The transmitted excitation signal is input to the attenuator 2. The output of the attenuator 2 is connected to the amplifier 2. The output of the amplifier 2 is connected to the digital control attenuator 2. The output of the digital control attenuator 2 is connected to the equalizer 2. The output of the equalizer 2 is connected to the band-pass filter 2. The output of the band-pass filter 2 is connected to the second-stage frequency conversion SIP module 2. The output of the second-stage frequency conversion SIP module 2 is connected to the radio frequency front-end SIP module 2. The output of the radio frequency front-end SIP module 2 is the output of the transmitting channel.

3. The modular SIP transceiver component based on HTCC according to claim 2, wherein: The local oscillator frequency synthesis SIP module 1 includes a reference crystal oscillator, a PLL1, a power divider 1, an attenuator 3, a power divider 2, an amplifier 3, an amplifier 4, a power divider 3, a power divider 4, an attenuator 4, an attenuator 5, an attenuator 6, an attenuator 7, and an attenuator 8. The output of the reference crystal oscillator is connected to the PLL1. The output of the PLL1 is connected to the power divider 1. One output of the power divider 1 is connected to the attenuator 3, and the other output is connected to the attenuator 8. The output of the attenuator 8 is used as the LO1 of the transmitting channel and is output to the frequency multiplier 2 of the second-stage frequency conversion SIP module 2. The output of the attenuator 3 is connected to the power divider 2. One output of the power divider 2 is connected to the amplifier 3. The output of the amplifier 3 is connected to the power divider 3. One output of the power divider 3 is connected to the attenuator 4. The output of the attenuator 4 is used as the received LO1-1 and is output to the frequency multiplier 1 of the first group of second-stage frequency conversion SIP modules 1. The other output of the power divider 3 is connected to the attenuator 5. The output of the attenuator 5 is used as the received LO1-2 and is output to the frequency multiplier 1 of the second group of second-stage frequency conversion SIP modules 1. The other output of the power divider 2 is connected to the amplifier 4. The output of the amplifier 4 is connected to the power divider 4. One output of the power divider 4 is connected to the attenuator 6. The output of the attenuator 6 is used as the received LO1-3 and is output to the frequency multiplier 1 of the third group of second-stage frequency conversion SIP modules 1. The other output of the power divider 4 is connected to the attenuator 7. The output of the attenuator 7 is used as the received LO1-4 and is output to the frequency multiplier 1 of the fourth group of second-stage frequency conversion SIP modules 1.

4. The modular sip transceiver component based on HTCC according to claim 3, characterized in that: The local oscillator frequency synthesizer SIP module 2 includes a reference crystal oscillator, PLL2, power divider 5, attenuator 9, power divider 6, amplifier 5, amplifier 6, power divider 7, power divider 8, attenuator 10, attenuator 11, attenuator 12, attenuator 13, and attenuator 14. The output of the reference crystal oscillator is connected to PLL2, the output of PLL2 is connected to power divider 5, one output of power divider 5 is connected to attenuator 9, the output of attenuator 9 is connected to power divider 6, one output of power divider 6 is connected to amplifier 5, the output of amplifier 5 is connected to power divider 7, one output of power divider 7 is connected to attenuator 10, and the output of attenuator 10 is used as the received LO2-1 and output to the frequency multiplier 2 of the first group of second-stage frequency conversion SIP module 2. The other output of power divider 7 is connected to attenuator 11, and the output of attenuator 11 is used as the received LO2-2 and output to the frequency multiplier 2 of the second group of second-stage frequency conversion SIP module 2. The other output of power divider 6 is connected to amplifier 6, the output of amplifier 6 is connected to power divider 8, one output of power divider 8 is connected to attenuator 12, and the output of attenuator 12 is used as the received LO2-3 and output to the frequency multiplier 2 of the third group of second-stage frequency conversion SIP module 2. The other output of power divider 8 is connected to attenuator 13, and the output of attenuator 13 is used as the received LO2-4 and output to the frequency multiplier 2 of the fourth group of second-stage frequency conversion SIP module 2. The other output of power divider 5 is connected to attenuator 14, and the output of attenuator 14 is used as the LO2 of the transmit channel and output to the mixer 4 of the second-stage frequency conversion SIP module 2.

5. The modular SIP transceiver component based on HTCC according to claim 4, characterized in that: Both the RF front-end SIP module 1 and the RF front-end SIP module 2 are made by using HTCC-based ceramic package. Both the second-stage frequency conversion SIP module 1 and the second-stage frequency conversion SIP module 2 are made by using HTCC-based ceramic package. Both the local oscillator frequency synthesizer SIP module 1 and the local oscillator frequency synthesizer SIP module 2 are made by using HTCC-based ceramic package. The PLL1 and PLL2 inside the local oscillator carrier board are made by using HTCC-based ceramic package.

6. The modular SIP transceiver component based on HTCC according to claim 4 or 5, characterized in that: The internal circuit of the described RF front-end SIP module 1 includes a limiter 1, a digital controlled attenuator 3, an amplifier 7, a digital controlled attenuator 4, an amplifier 8, a temperature compensated attenuator 1, a single-pole double-throw switch 1, a switched filter bank 1, a high-pass filter 1, an equalizer 3, and an equalizer 4. The output of the limiter 1 is connected to the digital controlled attenuator 3. The output of the digital controlled attenuator 3 is connected to the amplifier 7. The output of the amplifier 7 is connected to the digital controlled attenuator 4. The output of the digital controlled attenuator 4 is connected to the amplifier 8. The output of the amplifier 8 is connected to the temperature compensated attenuator 1. The output of the temperature compensated attenuator 1 is connected to the single-pole double-throw switch 1. One output end of the single-pole double-throw switch 1 is connected to the switched filter bank 1. The output of the switched filter bank 1 is connected to the equalizer 3. The output of the equalizer 3 is connected to the single-pole double-throw switch 2. The other output end of the single-pole double-throw switch 1 is connected to the high-pass filter 1. The output of the high-pass filter 1 is connected to the equalizer 4. The output of the equalizer 4 is connected to the single-pole double-throw switch 2. The channel selection of the single-pole double-throw switch 1 and the single-pole double-throw switch 2 is controlled by the FPGA. The input end of the limiter 1 and the output end of the single-pole double-throw switch 2 are connected through vertical interconnection and backside BGA pins.

7. The modular SIP transceiver component based on HTCC according to claim 6, characterized in that: The internal circuit of the described second-stage frequency conversion SIP module 1 includes an amplifier 9, a temperature compensated attenuator 2, a frequency multiplier 1, a band-pass filter 3, a mixer 1, a band-pass filter 4, an amplifier 10, and a mixer 2. The output of the amplifier 9 is connected to the temperature compensated attenuator 2. The output of the temperature compensated attenuator 2 is connected to the mixer 1. The LO1 is connected to the frequency multiplier 1. The output of the frequency multiplier 1 is connected to the band-pass filter 3. The output of the band-pass filter 3 is connected to the mixer 1. The output of the mixer 1 is connected to the band-pass filter 4. The output of the band-pass filter 4 is connected to the amplifier 10. The output of the amplifier 10 is connected to the mixer 2. The local oscillator terminal of the mixer 2 is connected to the LO2. The input end of the amplifier 9, the input end of the frequency multiplier 1, the local oscillator input end of the mixer 2, and the RF output end are connected through vertical interconnection and backside BGA pins.

8. The modular SIP transceiver component based on HTCC according to claim 7, characterized in that: The internal circuit of the described RF front-end SIP module 2 includes a digital attenuator 5, an amplifier 11, a digital attenuator 6, a temperature-compensated attenuator 3, a single-pole double-throw switch 3, a switched filter bank 2, a high-pass filter 2, equalizers 5 and 6, a single-pole double-throw switch 4, and an amplifier 12. The output of the amplifier 12 is connected to the single-pole double-throw switch 4. One output end of the single-pole double-throw switch 4 is connected to the equalizer 5. The output of the equalizer 5 is connected to the switched filter bank 2. The output of the switched filter bank 2 is connected to the single-pole double-throw switch 3. The other output end of the single-pole double-throw switch 4 is connected to the equalizer 6. The output of the equalizer 6 is connected to the high-pass filter 2. The high-pass filter 2 is connected to the single-pole double-throw switch 3. The output of the single-pole double-throw switch 3 is connected to the temperature-compensated attenuator 3. The output of the temperature-compensated attenuator 3 is connected to the digital attenuator 6. The output of the temperature-compensated attenuator 6 is connected to the amplifier 11. The output of the amplifier 11 is connected to the digital attenuator 5. The input end of the amplifier 12 and the output end of the digital attenuator 5 are connected through vertical interconnection and backside BGA pins.

9. The modular sip transceiver component based on HTCC according to claim 8, characterized in that: The internal circuit of the described second-stage frequency conversion SIP module 2 includes an amplifier 14, a temperature-compensated attenuator 4, a frequency multiplier 2, a band-pass filter 5, a mixer 3, a band-pass filter 6, an amplifier 13, a mixer 4, and an attenuator 15. The output of the attenuator 15 is connected to the mixer 4. The input of the mixer 4 is connected to LO2. The output of the mixer 4 is connected to the amplifier 13. The output of the amplifier 13 is connected to the band-pass filter 6. The output of the band-pass filter 6 is connected to the mixer 3. LO1 is connected to the input of the frequency multiplier 2. The output of the frequency multiplier 2 is connected to the band-pass filter 5. The output of the band-pass filter 5 is connected to the mixer 3. The output of the mixer 3 is connected to the temperature-compensated attenuator 4. The output of the temperature-compensated attenuator 4 is connected to the amplifier 14. The input end of the attenuator 15, the input end of the frequency multiplier 2, the local oscillator input end of the mixer 4, and the output end of the amplifier are connected through vertical interconnection and backside BGA pins.

10. The modular SIP transceiver component based on HTCC according to claim 9, characterized in that: The internal circuits of PLL1 and PLL2 are the same and include a VCO, a phase detector, a programmable frequency divider, a power splitter 9, a loop filter, a frequency multiplier 3, a single-chip microcomputer, and a voltage regulator. The output of the VCO is connected to the programmable frequency divider. The programmable frequency divider is connected to the power splitter 9. One output end of the power splitter 9 is connected to the phase detector. The output of the phase detector is connected to the loop filter. The output of the loop filter is connected to the VCO. The other output end of the power splitter 9 is connected to the frequency multiplier 3. The output of the frequency multiplier 3 is the PLL output. The control pin of the single-chip microcomputer is connected to the phase detector.

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