Integrated process sequence for hybrid bonding applications

Abstract

A method of ordering a hybrid bonding process by bi-directionally joining a grain source and a target. The method may include selecting a source of grains for joining, selecting a target to which grains are to be joined, joining the source with the target, joining the target with the source, forming an integrated joined product sequence including a first joined joining sequence for the source and a second joined joining sequence for the target, a bonding process chamber allocation and process timing for the source and the target are determined based on the integrated bond product sequence, and grains from the source are bonded to the target using the integrated bond product sequence.

Description

Technical Field

[0001] Embodiments of the present invention generally relate to semiconductor processing of semiconductor substrates. Background Art

[0002] Hybrid bonding is bonding more than one type of material in a single bonding process. For example, dies may be made of a dielectric material and have copper contacts. Substrates may also be made of a dielectric material and have copper contacts. When a die is bonded to a substrate, the dielectric material of the die bonds to the dielectric material of the substrate, and the contacts of the die bond to the contacts of the substrate. To form a proper bond, both the die and the substrate need to go through a bond preparation process (activation), which involves several different types of process chambers. The preparation process that the substrate holding the die undergoes is different from the preparation process of the substrate to which the die will be bonded. When using traditional stand-alone bonders in a simple bonding process, the processing of the die and the substrate can be easily coordinated because there is no in-tool activation involved, so they are each ready to be inserted into the bonder. However, the inventors have observed that due to the need for multiple die sources for bonding to a substrate, coordinating the in-line activation process has become extremely difficult, if not impossible.

[0003] Accordingly, the inventors have provided methods for improving hybrid bonding sequences that can take into account complex multi-die sources within a reasonable queue time while optimizing the throughput of integrated hybrid bonding tools. Summary of the Invention

[0004] Disclosed herein is a method for sequencing hybrid bonding processes for an integrated hybrid bonding tool.

[0005] In some embodiments, the method for sequencing hybrid bonding processes may include selecting a die source for bonding, selecting a target to which the die will be bonded, connecting the source to the target, connecting the target to the source, forming an integrated bonding product sequence including at least a first connection bonding sequence for the source and a second connection bonding sequence for the target, determining the bond process chamber assignment and process timing for the source and the target based on the integrated bonding product sequence, and using the integrated bonding product sequence to bond the die from the source to the target.

[0006] In some embodiments, the method for sequencing hybrid bonding processes may include selecting a die source for bonding, selecting a target to which the die will be bonded, connecting the source to the target, connecting the target to the source, forming an integrated bonding product sequence including a first connection bonding sequence for the source and a second connection bonding sequence for the target, determining the bond process chamber assignment and process timing for the source and the target based on the integrated bonding product sequence, comparing the integrated bonding product sequence with a user-provided bonding sequence, determining the differences between the integrated bonding product sequence and the user-provided sequence, and notifying the user of the differences and their compatibility with the hybrid bonding tool.

[0007] In some embodiments, a non-transitory, computer-readable medium stores instructions that, when executed, cause a method for performing an ordered hybrid bonding process, the method may include selecting a source of dies for bonding, selecting a target to which the dies are to be bonded, coupling the source to the target, coupling the target to the source, forming an integrated bonding product sequence including at least a first coupling bonding sequence for the source and a second coupling bonding sequence for the target, determining a bonding process chamber allocation and process timing for the source and the target based on the integrated bonding product sequence, and bonding dies from the source to the target using the integrated bonding product sequence.

[0008] Other and further embodiments are described below. BRIEF DESCRIPTION OF THE DRAWINGS

[0009] The embodiments of the invention outlined briefly above and discussed in more detail below may be understood with reference to the illustrative embodiments of the principles depicted in the drawings. However, the drawings depict only typical embodiments of the invention and should not be considered limiting of the scope since the invention may admit other equally effective embodiments.

[0010] Figure 1 Depicts a process flow of hybrid bonding according to some embodiments of the invention.

[0011] Figure 2 Depicts an isometric view of a bonding surface of a die and a substrate according to some embodiments of the invention.

[0012] Figure 3 Depicts a schematic view of a user interface for double coupling multiple sources and targets according to some embodiments of the invention.

[0013] Figure 4 Depicts a top view of a die bonding position on a target according to some embodiments of the invention.

[0014] Figure 5 Depicts a top view of a single die position with hierarchical information for a source according to some embodiments of the invention.

[0015] Figure 6 Is a method of an ordered hybrid bonding process according to some embodiments of the invention.

[0016] Figure 7 Depicts a schematic top view of an integrated hybrid bonding tool for bonding a die to a substrate according to some embodiments of the invention.

[0017] For ease of understanding, the same reference numerals are used throughout the figures to designate the same elements whenever possible. The figures are not drawn to scale and may be simplified for clarity. Elements and features of one embodiment may be beneficially incorporated into other embodiments without further recitation. Detailed implementation manners

[0018] These methods provide a bidirectional linked product sequence for hybrid bonding applications, which defines a complete solution for activation and bonding. The product sequence is a set of a target and at least one (or more) source sequences. Each target sequence contains references / links to all source sequences, and each source sequence has a reference / link to the target sequence. The bidirectional linked product sequence includes a bonding sequence with links from the source (die source) to the target and from the target to the source. These methods allow for hybrid bonding with different levels of complexity, where each material involved may have a separate bonding pre-activation sequence. Additionally, the dual links tightly couple the source and target sequences together to prevent user errors and optimize the routing of materials through the integration bonding tool to meet dwell or queue time requirements. These methods enable the selection of complex die patterns and die bonding orders and significantly reduce the dwell time between the first die and the last die bonded to the target wafer.

[0019] In its simplest form, a hybrid bonding product requires two materials - a target and a source. The target used herein is the substrate or wafer on which the dies are to be bonded. The source used herein is the composition wafer from which the dies are picked and placed on the target during the bonding process. Depending on the complexity, the number of source wafer types may vary. A final semiconductor product such as a chip may have dies from any number of sources. Before bonding occurs, both the target and the source need to be prepared for the actual bonding operation. The target and the source will be routed through various process chambers and processes. Once the materials (i.e., the target and the source) are fully prepared, the materials are moved to the bonder chamber. The bonding sequence of the present invention also defines the order of die bonding and the paired materials (source to target and target to source). In the current method, since the bonding process of the target wafer clearly specifies the source sequence used, and the source sequence specifies the target used, the source sequence and the target sequence are locked together as a single product sequence (integrated bonding product sequence). The single product sequence not only allows the sequence / scheduler to move the target and the correct source to the bonder at the right time to keep the queue time below the activation threshold, but also reduces user errors in using individual sequences when submitting a processing job.

[0020] These methods provide an overall performance improvement for the hybrid bonding process flow by dual-linking the target and source bonding process flows and forming an integrated bonding product sequence. These methods are optimized for an integrated hybrid bonding tool with on-board auxiliary process chambers and buffers. The integrated hybrid bonding tool, such as Figure 7The integrated hybrid bonding tool depicted (discussed below) provides multiple chambers or stations in a controlled environment. The controlled environment allows for processing in individual chambers and movement of substrates between chambers without the risk of contamination due to exposure to adverse environments that may cause, for example, oxidation of materials on the substrate and / or damage to the substrate and / or hinder performance due to particulate deposition.

[0021] Figure 1 An example of a bonding process flow 100 for a target 118 and a source 102 is depicted, and this figure is not meant to be limiting. In the bonding process, both the grains (source) and the target to which the grains are to be bonded are prepared prior to bonding to enhance the bonding performance. In some cases, the source 102 can be processed in parallel with, before, or after the target 118, onto which the grains from the source 102 are to be bonded. As used herein, a source can be a wafer or substrate that provides thin film frames, die, top grains, or components for bonding to a target (such as a substrate, base wafer, base grain, or cell), respectively. For simplicity and not meant to be limiting, the term "grain" is used herein to refer to the thin film frame, die, top grain, or component provided by the source for bonding to the target.

[0022] The source 102 may undergo other processes prior to the hybrid bonding process. Other processes may include upstream processing such as patterning, chemical mechanical polishing (CMP), back grinding, dicing, and the like. In some embodiments, for example, the grains may be separated (singulated) and held together on the backside by a dicing tape to produce the source 102. In some embodiments, the grains may be reconstituted (molded) on a carrier wafer to form the source 102, from which grains are selected for bonding. In some embodiments, in the bonding process flow 100, the source 102 generally undergoes a first wet cleaning process 104, then a degassing process 106 to help remove moisture in the source 102. Next, the source 102 is subjected to a first plasma activation treatment 108 to increase the bonding attraction, and then a first hydration process 110. Then the source 102 is subjected to a radiation process 112 (e.g., ultraviolet radiation, etc.) in order to loosen the adhesive bond that holds the grains to the source 102 prior to bonding. In some embodiments, the target 118 may undergo other treatments prior to the bonding process flow 100. The target 118 may also have previously stacked grains on the target 118. The target 118 is processed before, in conjunction with, or after the processing of the source 102. In some embodiments, the target 118 first undergoes a second wet cleaning process 120, then a second plasma activation process 122. Then, the target 118 undergoes a second hydration process 124 to prepare for bonding.

[0023] The bonding is then completed by subjecting the source 102 to a pop and pick process 114 that allows selection and flipping of the die to prepare for bonding. In the bonding process 116, the die is placed on the target 118 and the die is bonded to the target 118, resulting in a target 126 with the die bonded to the target. The target 126 with the die bonded to the target may have multiple die bonded to the surface during one or more bonding stages. In some embodiments, a low temperature annealing process is performed on the target 126 with the die bonded to the target to reflow the connections between the die and the target to further bond these connections. Figure 2 Isometric view 200 depicts a die 202 from the source 102 being popped / flipped and bonded to the target bonding surface 206 of the target 118. When the die 202 is attached to the source 102, the uppermost surface of the die 202 is the die bonding surface 204. When the die 202 is flipped 208, the lowermost surface of the die 202 becomes the die bonding surface 204. During bonding 210, the die bonding surface 204 and the target bonding surface 206 are brought into contact and allowed to bond together. The bonding performance is affected by parameters such as bonding surface contamination (preparation), bonding pressure, and / or bonding temperature and the like.

[0024] One aspect of forming an integrated bonding product sequence is to consider any processing requirements (e.g., queue time, etc.) and any possible timing issues or bottlenecks (e.g., limited number or only one process chamber available at a given time, etc.) between the source sequence and the target sequence. In other words, both the processing time (e.g., queue time) and the throughput (e.g., bottleneck) need to be satisfied in order for the integrated bonding product sequence to function optimally. In traditional processing flows, the source is treated as a consumable (source supplies the die) and not as a wafer. In the current method, the source is treated as a wafer during the preparation for bonding process first and then as a consumable during the actual bonding process. The source bonding process and the target bonding process are aligned (synchronization of materials i.e., target and source) using factors and constraints of the bonding process and equipment to produce the desired results.

[0025] The method of the present invention takes into account the complexity of the bonding process in forming an integrated bonding product sequence (product sequence). Factors that may be considered in the integrated bonding product sequence include but are not limited to target selection, one or more source selections, chamber specifications (e.g., recipe, motion control, etc.), robot speed profile, die position bonding map (e.g., Figure E142 and the like), and / or die-level composition of the material (e.g., material type, grading, source and source location, etc.). Other limitations may also be compensated for in the integrated bonding product sequence, such as but not limited to maximizing bonder utilization, minimizing the queue time of critical processes (e.g., just-in-time material handling, etc.), process sequences established by the user associated with specific tasks, and / or optimizing just-in-time consumed material handling while maximizing bonder utilization and the like.

[0026] In some embodiments, to provide a simple and intuitive connection process for establishing an integrated bonding product sequence, a user interface (UI) 300 as shown in Figure 3 FIG. may be used. In the exemplary UI 300, a user can easily connect the target sequence 302 to the first source sequence 304 by connecting item 312 in the target sequence 302 to the first source sequence. Similarly, the second source sequence 306 is connected to the target sequence 302 through the second source sequence connection item 314. Similarly, the third source sequence 308 is connected to the target sequence 302 through the third source sequence connection item 316. Any number of sources can be connected to a given target source sequence. In a similar manner, the first source sequence 304 is connected to the target sequence 302 through the first target sequence connection item 318 in the first source sequence 304. The second source sequence 306 is connected to the target sequence 302 through the second target sequence connection item 320 in the second source sequence 306, and the third source sequence 308 is connected to the target sequence 302 through the third target sequence connection item 322 in the third source sequence 308. The dual connection of the target to the source and the source to the target enables the formation of an integrated bonding product sequence including one or more source bonding processes and at least one target bonding process.

[0027] In other words, to perform step N of the target sequence 302, source 1 is required and should be ready for bonding during step N of the target sequence 302. At the same time, source 1 should be ready to bond with the target during step X of source sequence 1. To perform step N+1 of the target sequence 302, source 2 is required and should be ready for bonding during step N+1 of the target sequence 302. At the same time, source 2 should be ready to bond with the target during step X of source sequence 2. To perform step M of the target sequence 302, source 3 is required and should be ready for bonding during step M of the target sequence 302. At the same time, source 3 should be ready to bond with the target during step X of source sequence 3. A user can easily connect and view the connection relationships using this user interface. UI 300 is intended as an example and is not intended to be limiting.

[0028] As can be seen from Figure 1 FIG., the bonding process of a single source and target may be complex due to resource scheduling issues, transportation time, and overall timing to allow the grains and the target to reach the bonder at the correct time. When the target requires multiple sources to provide multiple types of grains, the complexity becomes overwhelming for the user to properly schedule all the required resources. The method of the present invention provides a solution to this complex problem. For example, a target incorporating multiple sources may have multiple bonding positions. Figure 4View 400 depicts an example of a target 118 having a first die bonding location 402, a second die bonding location 404, and a third die bonding location 406 for a single wafer 408. Each die bonding location may receive dies from different sources. In some cases, the order in which the bonding locations are filled may be critical. The methods provided herein may account for such importance and ensure that bonding occurs in the correct order.

[0029] Another issue considered by the method of the present invention is the grading of dies on the source wafer. During manufacturing, defects may cause a degradation in the performance of some dies on the source wafer. Some targets may only require the highest performance dies, thus reducing the number of available dies from the source wafer for a particular target. For example, in Figure 5 view 500, an example of a source 102 is depicted having multiple die grading types, such as an A-type grading 502 and a B-type grading 504. As dies are removed from the source 102, the number of available dies of a given grading type decreases, leaving empty locations 506 on the source 102. In some cases, it may be necessary to schedule multiple sources having the same die grading type at the bonder to meet the requirements of a particular target, which increases the complexity of the process. Additionally, the integrated hybrid bonder 700 has many process chambers and process control components (e.g., robotic transfer tools, buffers, etc.), which requires proper scheduling in the integrated bonding product sequence.

[0030] In some embodiments, to form an integrated bonding product sequence (product sequence), the following parameters are determined to achieve an efficient integrated bonding product sequence. First, the product sequence considers the resource and timing issues of the source bonding process and the target bonding process. Any resource bottlenecks must be resolved by aligning or synchronizing the source and target bonding processes. The number of steps and the step durations in each process are considered. The product sequence aligns the processes to eliminate resource bottlenecks while further using the timing of the process to control the feed rates of the source and target to control the throughput of the bonding. Second, the integrated bonding product sequence must consider process chamber metrics. For example, and not intending to be limiting, the time to receive a particular type of wafer, the time for the robot to pick up and / or drop off a wafer, the time to run a process recipe (chamber process time), and / or the time for the robot to transfer a wafer through the integrated hybrid bonder.

[0031] The overall duration may include wafer transfer time (e.g., automation or robot time) plus all processing times. Additionally, it may include other miscellaneous times, such as the amount of time spent on the process chamber entering a safe condition (e.g., evacuating harmful gases before releasing the wafer, etc.). The movement of the wafer through the integration tool can be referred to as "motion control". When determining the integrated bonding product sequence, the robot speed profile for the effective robot transfer of the wafer may also be used. Similarly, the die bonding map (e.g., Figure E142, etc.) and die-level composition (e.g., grading, processor speed, etc.) can also be used. As Figure 5 shown, the source wafer may not have all die graded the same, and not 100% of the die may be available for a particular target. Additionally, some source wafers may have fewer available die than other source wafers. It may be necessary to load additional sources into the bonder to complete the target bonding process.

[0032] In an alternative, the target may be moved to the next bonder and then moved back to the first bonder later in the process when more of a particular die type is available. In some cases, a particular target may require a lower grading type, and if that lower grading type is available, it may be processed earlier in the process. The integrated bonding product sequence takes into account many (if not all) of the above cases, and even more. The integrated bonding product sequence also takes into account the limitations required by the user. For example, but not intended to be limiting, the user can set the activation or queue time that the bonding process must meet. The integrated bonding product sequence will attempt to maximize resources and throughput according to the user limitations. If it is not possible to maximize resources and throughput due to user limitations, the integrated bonding product sequence can provide the user with a series of options to make a trade-off in terms of maximizing throughput relative to resources, or give results based on an increased tolerance for a given user limitation.

[0033] Figure 6Method 600 depicts an ordered hybrid bonding process for some embodiments. In optional block 602, inputs associated with the hybrid bonding process may be received. Such inputs may include, but are not limited to, at least one process recipe for at least one process chamber, at least one grain map input for a target, and / or at least one process sequence input for bonding. These inputs can be used to determine bonding process chamber allocation and process timing, as described below. One or more inputs can be received at any stage of method 600. In block 604, at least one grain source is selected for bonding. In some cases, multiple sources may be selected such that multiple different grains can be bonded to a single or multiple targets. In block 606, the target to which the grains will be bonded is selected. In block 608, the selected at least one source is connected to the target. In block 610, the selected target is connected to the selected at least one source. In block 612, an integrated bonding product sequence is formed, which includes at least one first connected bonding sequence for at least one source and a second connected bonding sequence for the target.

[0034] In step 614, based on the integrated bonding product sequence, the bonding chamber allocation and process timing for at least one source and the target are determined. In some embodiments, determining the bonding chamber allocation and process timing may include, but are not limited to, considering the activation queue time of at least one source and the activation queue time of the target, considering the maximum utilization rate of at least one hybrid bonding process chamber, considering the timely consumption of the maximum utilization rate of at least one hybrid bonding process chamber, considering the process chamber recipe and motion control duration, considering the robot transfer speed, considering the grain-level composition of the material of at least one source, and / or considering the grain map and the like for positioning the grains on the target. In optional block 616, the integrated bonding product sequence is compared with the user bonding sequence. In optional block 618, the differences between the integrated bonding product sequence and the user bonding sequence are determined. In optional block 620, the user is notified of the differences between the sequences. The user may be notified of the differences and compatibility with the hybrid bonding tool. For example, the user may be notified of issues such as throughput level or bonder utilization level compared to the integrated bonding product sequence. The user may then determine to change the integrated bonding product sequence or continue to use the integrated bonding product sequence. In step 622, based on the integrated bonding product sequence, at least one grain from at least one source is bonded to the target. Or in an alternative, if the user changes the sequence for a specific desired result, the bonding is performed based on the changed integrated bonding product sequence.

[0035] Figure 7Depicts a schematic top view of an integrated hybrid bonding tool 700 for bonding dies to a target according to at least some embodiments of the present invention. The above method can be performed using the integrated hybrid bonding tool 700. The integrated hybrid bonding tool 700 generally includes an equipment front end module (EFEM) 702 and a plurality of automation modules 710, which are serially coupled to the EFEM 702. These automation modules 710 are configured to transport one or more types of substrates 712 from the EFEM 702 through the integrated hybrid bonding tool 700 and perform one or more processing steps on the one or more types of substrates 712 (e.g., sources with dies, targets for bonding dies, etc.). Each of these automation modules 710 generally includes a transfer chamber 716 and one or more process chambers 706 coupled to the transfer chamber 716 for performing one or more processes. These automation modules 710 are coupled to each other through their respective transfer chambers 716, providing modular scalability and customization for the integrated hybrid bonding tool 700. As Figure 7 shown, these automation modules 710 include three automation modules, where the first automation module 710a is coupled to the EFEM 702, the second automation module 710b is coupled to the first automation module 710a, and the third automation module 710c is coupled to the second automation module 710b.

[0036] The equipment front end module (EFEM) 702 includes a plurality of load ports 714 for receiving one or more types of substrates 712. In some embodiments, the one or more types of substrates 712 include 200 mm wafers, 300 mm wafers, 450 mm wafers, framed substrates, carrier substrates with or without reconfigured dies, silicon substrates, glass substrates, etc. In some embodiments, the plurality of load ports 714 includes at least one of the following: one or more first load ports 714a for receiving a first type of substrate 712a, or one or more second load ports 714b for receiving a second type of substrate 712b. In some embodiments, the size of the first type of substrate 712a is different from the size of the second type of substrate 712b. In some embodiments, the second type of substrate 712b includes a framed substrate or a carrier substrate. In some embodiments, the second type of substrate 712b includes a plurality of dies disposed on a framed board or a carrier board. In some embodiments, the second type of substrate 712b may hold different types and sizes of dies. Thus, the one or more second load ports 714b may have different sizes or receiving surfaces configured to load the second type of substrate 712b with different sizes. In some embodiments, the plurality of load ports 714 are arranged along a common side of the EFEM 702. Although Figure 7Depicts a pair of first load ports 714a and a pair of second load ports 714b, but the EFEM 702 may include other combinations of load ports, such as one first load port 714a and three second load ports 714b. Additionally, the integrated hybrid bonding tool 700 may also incorporate a buffer 790 to provide temporary storage or buffering for the source and target materials. The buffer 790 helps to meet the timing and other factors and / or constraints of the integrated bonding product sequence provided by the present invention by making the target and / or source available for processing at any time without external retrieval.

[0037] In some embodiments, the EFEM 702 includes a scanning station 708 with a substrate ID reader for scanning one or more types of substrates 712 to identify information. In some embodiments, the substrate ID reader includes a barcode reader or an optical character recognition (OCR) reader. The integrated hybrid bonding tool 700 is configured to use any identification information from the scanned one or more types of substrates 712 to determine processing based on the identification information, e.g., different processes and / or placements for a first type of substrate 712a and a second type of substrate 712b. In some embodiments, the scanning station 708 may also be configured for rotational movement to align the first type of substrate 712a or the second type of substrate 712b. In some embodiments, one or more of the plurality of automated modules 710 include the scanning station 708. The EFEM robot 704 is disposed within the EFEM 702 and is configured to transport the first type of substrate 712a and the second type of substrate 712b between the plurality of load ports 714 and the scanning station 708. The EFEM robot 704 may include a substrate end effector for transporting the first type of substrate 712a and a second end effector for transporting the second type of substrate 712b. The EFEM robot 704 may perform rotational or rotational and linear movement.

[0038] The transfer chamber 716 includes a buffer 720 configured to hold one or more substrates 712a of a first type. In some embodiments, the buffer 720 is configured to hold one or more of the substrates 712a of the first type and one or more of the substrates 712b of a second type. The transfer chamber 716 includes a transfer robot 726 configured to transfer substrates 712a of the first type and substrates 712b of the second type between the buffer 720, one or more process chambers 706, and a buffer in an adjacent automation module of a plurality of automation modules 710. For example, the transfer robot 726 in the first automation module 710a is configured to transfer substrates 712a of the first type and substrates 712b of the second type between the buffers 720 in the first automation module 710a and the second automation module 710b. In some embodiments, the buffer 720 is disposed within the internal volume of the transfer chamber 716, facilitating a reduction in the footprint of the overall tool. Additionally, the buffer 720 may be open to the internal volume of the transfer chamber 716 to enable easy access by the transfer robot 726.

[0039] One or more process chambers 706 may include an atmospheric chamber configured to operate at atmospheric pressure and a vacuum chamber configured to operate at a vacuum pressure. Examples of atmospheric chambers may generally include wet cleaning chambers, radiation chambers, heating chambers, metrology chambers, adapter chambers, or similar chambers. Examples of vacuum chambers may include plasma activation chambers. The types of atmospheric chambers discussed above may also be configured to operate under vacuum when needed. One or more process chambers 706 may be any process chamber or module required to perform bonding processes, cleaning processes, radiation processes, or similar processes. In some embodiments, one or more of the process chambers 706 in each of the plurality of automation modules 710 includes at least one of the following: a wet cleaning chamber 722, a plasma activation chamber 730, a degassing chamber 732, a radiation chamber 734, or an adapter chamber 740, such that the integrated hybrid bonding tool 700 includes at least one wet cleaning chamber 722, at least one plasma activation chamber 730, at least one degassing chamber 732, at least one radiation chamber 734, and at least one adapter chamber 740. One or more process chambers 706 may be arranged in any suitable location of the integrated hybrid bonding tool 700.

[0040] The wet cleaning chamber 722 is configured to perform a wet cleaning process to clean one or more types of substrates 712 with a fluid (e.g., water). The wet cleaning chamber 722 may include a first wet cleaning chamber 722a for cleaning a first type of substrate 712a or a second wet cleaning chamber 722b for cleaning a second type of substrate 712b. The degassing chamber 732 is configured to perform a degassing process, such as removing moisture through a high-temperature baking process. In some embodiments, the degassing chamber 732 includes a first degassing chamber 732a and a second degassing chamber 732b. The plasma activation chamber 730 may be configured to perform an activation process on the substrate to prepare for hybrid bonding. Activation helps increase the bonding strength between the surfaces. In some embodiments, the plasma activation chamber 730 includes a first plasma activation chamber 730a and a second plasma activation chamber 730b. The radiation chamber 734 is configured to perform a radiation process to reduce the adhesion between the source die, such as a framed substrate or a carrier substrate with reconfigured die. For example, the radiation chamber 734 may be an ultraviolet radiation chamber configured to direct ultraviolet irradiation at the source or a heating chamber configured to heat the source. Reducing the adhesion between the die and the source helps remove the die from the source more easily. The adapter chamber 740 is configured to transfer at least a portion of the die from the source to the target. The adapter chamber 740 generally includes a first support 742 for supporting one of the first type of substrates 712a and a second support 744 for supporting one of the second type of substrates 712b.

[0041] In some embodiments, the last automation module among the plurality of automation modules 710, such as Figure 7 the third automation module 710c in Figure 7 illustrated with two). In some embodiments, the first of the two adapter chambers is configured to remove and bond die having a first size, while the second of the two adapter chambers is configured to remove and bond die having a second size. In some embodiments, any of these automation modules 710 includes a metrology chamber 718 configured to measure one or more types of substrates. In Figure 7 it, the metrology chamber 718 is shown as part of the second automation module 710b and is coupled to the transfer chamber 716 of the second automation module 710b. However, the metrology chamber 718 may be coupled to any transfer chamber 716 or be located within the transfer chamber 716.

[0042] The controller 780 controls the operation of any of the integrated hybrid bonding tools described herein, including the integrated hybrid bonding tool 700. The controller 780 can directly control the integrated hybrid bonding tool 700, or alternatively, by controlling a computer (or controller) associated with the integrated hybrid bonding tool 700. In operation, the controller 780 causes data to be collected from and fed back to the integrated hybrid bonding tool 700 to optimize the performance of the integrated hybrid bonding tool 700 and control the processing flow in accordance with the methods described herein. The controller 780 generally includes a central processing unit (CPU) 782, a memory 784, and support circuitry 786. The CPU 782 can be any form of general-purpose computer processing unit suitable for industrial settings. The support circuitry 786 is coupled to the CPU 782 in a conventional manner and may include a cache, a clock circuit, an input / output subsystem, a power supply, and the like. Software routines such as the methods described above can be stored in the memory 784 and, when executed by the CPU 782, transform the CPU 782 into a special-purpose computer (controller 780). These software routines may also be stored and / or executed by a second controller (not shown) located remote from the integrated hybrid bonding tool 700.

[0043] The memory 784 is in the form of a computer-readable storage medium containing instructions that, when executed by the CPU 782, facilitate the operation of semiconductor processes and devices. The instructions in the memory 784 exist in the form of a program product, such as a program implementing the methods of the present invention. The program code may conform to any of a variety of different programming languages. In one example, the present disclosure can be implemented as a program product stored on a computer-readable storage medium for use with a computer system. The program in the program product defines functions in various aspects (including the methods described herein). Exemplary computer-readable storage media include, but are not limited to: non-writable storage media (e.g., read-only memory devices within a computer, such as CD-ROM discs readable by a CD-ROM drive, flash memory, ROM chips, or any type of solid-state non-volatile semiconductor memory) on which information is permanently stored; and writable storage media (e.g., floppy disks in a floppy disk drive or hard disk drives or any type of solid-state random access semiconductor memory) on which changeable information is stored. Such computer-readable storage media are aspects of the present invention when carrying computer-readable instructions capable of guiding the functions of the methods described herein.

[0044] Embodiments in accordance with the present invention may be implemented in hardware, firmware, software, or any combination thereof. Embodiments may also be implemented as instructions stored on one or more computer-readable media, which may be read and executed by one or more processors. A computer-readable medium may include any mechanism for storing or transmitting information in a machine-readable form (e.g., a computing platform or “virtual machine” operating on one or more computing platforms). For example, a computer-readable medium may include any suitable form of volatile or non-volatile memory. In some embodiments, a computer-readable medium may include a non-transitory computer-readable medium.

[0045] While the foregoing is directed to embodiments of the present invention, other and further embodiments of the invention may be conceived without departing from the basic scope thereof.

Claims

1. A method for sequencing a hybrid bonding process, the method comprising: Selecting at least one die source for bonding; Selecting a target to which the die is to be bonded; Connecting the at least one source to the target; Connecting the target to the at least one source; Forming an integrated bonding product sequence, the integrated bonding product sequence including at least one first connecting bonding sequence for the at least one source and a second connecting bonding sequence for the target; Determining, based on the integrated bonding product sequence, a bonding process chamber allocation and process timing for the at least one source and the target; And Using the integrated bonding product sequence to bond at least one die from the at least one source to the target.

2. The method according to claim 1, wherein determining the bonding process chamber allocation and process timing includes: Taking into account the activation queue time of the at least one source and the activation queue time of the target.

3. The method according to claim 1, wherein determining the bonding process chamber allocation and process timing includes: Taking into account the maximum utilization rate of at least one hybrid bonding process chamber.

4. The method according to claim 3, wherein determining the bonding process chamber allocation and process timing includes: Taking into account the timely consumption to achieve the maximum utilization rate of the at least one hybrid bonding process chamber.

5. The method according to claim 1, wherein determining the bonding process chamber allocation and process timing includes: Taking into account the process chamber recipe and the motion control duration.

6. The method according to claim 1, wherein determining the bonding process chamber allocation and process timing includes: Taking into account the robot transfer speed.

7. The method according to claim 1, wherein determining the bonding process chamber allocation and process timing includes: Taking into account the die-level composition of the material of the at least one source.

8. The method according to claim 1, wherein determining the bonding process chamber allocation and process timing includes: Taking into account the die map for positioning the die on the target.

9. The method according to claim 1, the method further comprising: Comparing the integrated bonding product sequence with a bonding sequence provided by a user; Determining the difference between the integrated bonding product sequence and the bonding sequence provided by the user; and Notifying the user of the difference and the compatibility with the hybrid bonding tool.

10. The method according to claim 9, the method further comprising: Notifying the user of the throughput level or the adapter utilization level compared with the integrated bonding product sequence.

11. The method according to claim 1, the method further comprising: Accepting at least one recipe input for at least one process chamber; Accepting at least one die map input for the target; Accepting at least one process sequence input for bonding; and Determining a bonding process chamber allocation and process timing based on the at least one recipe input, the at least one die map input, or the at least one process sequence input.

12. A method for sequencing a hybrid bonding process, the method comprising: Selecting at least one die source for bonding; Selecting a target to which the die is to be bonded; Connecting the at least one source to the target; Connecting the target to the at least one source; Forming an integrated bonding product sequence, the integrated bonding product sequence including at least one first connecting bonding sequence for the at least one source and a second connecting bonding sequence for the target; Determining, based on the integrated bonding product sequence, a bonding process chamber allocation and process timing for the at least one source and the target; Comparing the integrated bonding product sequence with a bonding sequence provided by a user; Determining the difference between the integrated bonding product sequence and the bonding sequence provided by the user; And Notifying the user of the difference and the compatibility with the hybrid bonding tool.

13. The method according to claim 12, the method further comprising: Notifying the user of the throughput level or the adapter utilization level compared with the integrated bonding product sequence.

14. The method according to claim 12, wherein the method further comprises: Receiving at least one recipe input for at least one process chamber; Receiving at least one grain map input for the target; Receiving at least one process sequence input for bonding; and Determining bonding process chamber allocation and process timing based on the at least one recipe input, the at least one grain map input, or the at least one process sequence input.

15. The method according to claim 12, wherein determining the bonding process chamber allocation and process timing includes: Considering the activation queue time of the at least one source and the activation queue time of the target.

16. The method according to claim 12, wherein determining the bonding process chamber allocation and process timing includes: Considering the maximum utilization rate of at least one hybrid bonding process chamber.

17. The method according to claim 12, wherein determining the bonding process chamber allocation and process timing includes at least one of a, b, c, or d: (a) Considering the process chamber recipe and the motion control duration; (b) Considering the robot transfer speed; (c) Considering the grain-level composition of the material of the at least one source; or (d) Considering the grain map for positioning grains on the target.

18. A non-transitory, computer-readable medium having instructions stored thereon that, when executed, cause a method for sequencing a hybrid bonding process to be performed, the method comprising: Selecting at least one grain source for bonding; Selecting a target onto which grains are to be bonded; Connecting the at least one source to the target; Connecting the target to the at least one source; Forming an integrated bonding product sequence that includes at least one first connected bonding sequence for the at least one source and a second connected bonding sequence for the target; Determining bonding process chamber allocation and process timing for the at least one source and the target based on the integrated bonding product sequence; and And Using the integrated bonding product sequence to bond at least one grain from the at least one source to the target.

19. The non-transitory, computer-readable medium according to claim 18, wherein determining the bonding process chamber allocation and process timing includes at least one of a, b, c, d, e, f, and g: (a) Considering the activation queue time of the at least one source and the activation queue time of the target; (b) Considering the maximum utilization rate of at least one hybrid bonding process chamber; (c) Considering the timely consumption for achieving the maximum utilization rate of the at least one hybrid bonding process chamber; (d) Considering the process chamber recipe and the motion control duration; (e) Considering the robot transfer speed; (f) Considering the grain-level composition of the material of the at least one source; or (g) Considering the grain map for positioning grains on the target.

20. The non-transitory, computer-readable medium according to claim 18, wherein the method further comprises: Comparing the integrated bonding product sequence with a bonding sequence provided by a user; Determining the difference between the integrated bonding product sequence and the bonding sequence provided by the user; and Notifying the user of the difference and the compatibility with the hybrid bonding tool.

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