Substrate processing equipment and cleaning device thereof

Abstract

The invention provides a substrate processing apparatus and a cleaning device thereof. The substrate processing apparatus includes a substrate holding portion and a cleaning device. The substrate holding part is used for holding a substrate. The cleaning device sprays process liquid along a path above the substrate and comprises a first nozzle and an extension plate. The first nozzle provides a process liquid towards the substrate along a path. The extension plate is arranged on the peripheral side of the first nozzle and extends towards the edge direction of the base plate.

Description

Technical Field

[0001] This application relates to a substrate processing apparatus and a cleaning device thereof, particularly a substrate processing apparatus and a cleaning device thereof that can avoid back-splashing of cleaning solution to contaminate the chamber. Background Art

[0002] In semiconductor manufacturing processes, the cleaning of wafers is an important process. Especially if the contamination caused by processes such as wafer dicing or etching is not completely cleaned, these residual contaminants will seriously affect the subsequent processes and ultimately lead to a decrease in the wafer yield.

[0003] In addition, if the cleaning liquid splashes during cleaning, it will cause contamination of the chamber. For example, when a wafer needs to be cleaned, a cleaning liquid such as deionized water is required. If these cleaning liquids splash into the chamber of the cleaning equipment, other chemicals such as cleaning chemicals and etching chemicals will be contaminated, affecting the cleaning or etching process.

[0004] However, with the evolution of semiconductor manufacturing processes, the structure of wafers has become increasingly complex, the line width and line pitch have become smaller and smaller, the surface structure has become more three-dimensional, and the aspect ratio has been greatly increased. In this case, as Figure 9 shown, due to the deepening of the grooves 72 between the grains 71 or the relatively large distance of the nozzles 70, when the fluid is sprayed on the substrate, due to the high aspect ratio, the surface of the substrate will no longer be flat, resulting in easy splashing of the solution. Therefore, a substrate processing apparatus and a cleaning device thereof are needed to solve the above-mentioned conventional problems. Summary of the Invention

[0005] Based on the above object, this application provides a cleaning device, including a first nozzle and an extension plate. The first nozzle provides a process liquid to the substrate along a path. The extension plate is disposed on the periphery of the first nozzle and extends in the direction of the edge of the substrate.

[0006] Preferably, the cleaning device of this application further includes a mask and a second nozzle. The mask is connected to the extension plate, and the second nozzle is accommodated in the mask.

[0007] Preferably, the second nozzle is connected to two pipelines.

[0008] Preferably, the two pipelines are a gas pipeline and a liquid pipeline respectively.

[0009] Preferably, the cleaning device of this application further includes an extension arm and a driving unit. One end of the extension arm is connected to the driving unit, and the first nozzle and the second nozzle are disposed at the other end of the extension arm.

[0010] Preferably, the first nozzle is connected to a deionized water pipeline.

[0011] Preferably, the extension plate has an arc-shaped outer periphery.

[0012] Preferably, the width of the extension plate ranges from 2 to 10 cm, and the length ranges from 2 to 12 cm.

[0013] For the above purposes, the present application further provides a substrate processing apparatus, including a substrate holding portion and a cleaning device. The substrate holding portion is used to hold a substrate. The cleaning device sprays a process liquid along a path above the substrate, and includes a first nozzle and an extension plate. The first nozzle provides a process liquid to the substrate along a path. The extension plate is disposed on the periphery of the first nozzle and extends toward the edge of the substrate.

[0014] Preferably, the cleaning device further includes a mask and a second nozzle. The mask is connected to the extension plate, and the second nozzle is received in the mask.

[0015] Preferably, the second nozzle is connected to two pipelines.

[0016] Preferably, the two pipelines are a gas pipeline and a liquid pipeline respectively.

[0017] Preferably, the cleaning device further includes an extension arm and a driving unit. One end of the extension arm is connected to the driving unit, and the first nozzle and the second nozzle are disposed at the other end of the extension arm.

[0018] The present application provides a substrate processing apparatus and its cleaning device. In the present application, even for deep grooves between grains or a relatively large distance between the nozzle and the grains, the present application can still prevent the cleaning solution from splashing back, thus avoiding contamination of the chamber during cleaning. Description of the Drawings

[0019] The non-limiting examples of the embodiments disclosed herein are described below with reference to the drawings listed later in this section. The drawings in the specification and the specification are intended to illustrate and clarify the embodiments disclosed herein and should not be construed as limiting in any way.

[0020] Figure 1 Schematic diagram of a substrate processing apparatus according to an embodiment of the present application.

[0021] Figure 2 First schematic diagram of a cleaning device according to an embodiment of the present application.

[0022] Figure 3 Second schematic diagram of a cleaning device according to an embodiment of the present application.

[0023] Figure 4 Bottom view of a cleaning device according to an embodiment of the present application.

[0024] Figure 5 Top view of a cleaning device according to an embodiment of the present application.

[0025] Figure 6 The first cleaning schematic diagram according to an embodiment of the present application.

[0026] Figure 7 The second cleaning schematic diagram according to an embodiment of the present application.

[0027] Figure 8 The third cleaning schematic diagram according to an embodiment of the present application.

[0028] Figure 9 The cleaning schematic diagram of the prior art. Detailed implementation manners

[0029] For the convenience of the examiner to understand the technical features, content, advantages and achievable effects of the present application, the present application will be described in detail below in conjunction with the accompanying drawings in the form of embodiments. The drawings used herein are only for illustrative and auxiliary purposes, and may not be the true proportions and precise configurations after the implementation of the present application. Therefore, the scope of rights in actual implementation of the present application should not be interpreted or limited by the proportional and configurational relationships of the attached drawings. This is stated first.

[0030] Hereinafter, embodiments according to the present application will be described with reference to the relevant drawings. For the convenience of understanding, the same elements in the following embodiments are denoted by the same reference numerals.

[0031] As Figure 1 shown, the present application provides a substrate processing apparatus 1, which includes a substrate holding portion 30 and a cleaning device 10. The substrate holding portion 30 is used to hold a substrate 20, and the cleaning device 10 sprays a process liquid along a path above the substrate 20 to clean the substrate 20.

[0032] In one embodiment, the substrate 20 may be a wafer product. Specifically, generally, 3D-IC wafer stacking can be divided into: (1) Chip to Chip (C2C) stacking, (2) Chip to Wafer (C2W) stacking, and (3) Wafer to Wafer (W2W) stacking. Wafer stacking will cause the surface of the wafer to have an uneven surface with a high aspect ratio.

[0033] In one embodiment, the substrate holding portion 30 includes a rotating disk 31 and a recovery ring 32 surrounding the rotating disk 31. The rotating disk 31 is used to hold the substrate 20 thereon. For example, the substrate 20 can be adsorbed on the rotating disk 31 by means of vacuum adsorption, or the substrate can be clamped and fixed on the rotating disk 31 by means of a clamping mechanism, but it is not limited thereto.

[0034] When processing the substrate 20 by the substrate processing apparatus 1, first, the substrate 20 is held on the rotating disk 31, and then a processing liquid (such as an etching solution, a cleaning solution, deionized water, etc.) is sprayed along a path above the substrate 20 by the cleaning device 10 to clean the substrate 20.

[0035] The recovery ring 32 can recover processing liquids such as etching solutions and cleaning solutions. The purpose of this application is to prevent cleaning liquids, such as deionized water, from splashing back and contaminating the recovery ring 32 when the cleaning device 10 cleans the substrate 20, resulting in a reduction in the recovery efficiency of processing liquids such as etching solutions and cleaning solutions.

[0036] Furthermore, the cleaning device 10 sprays a processing liquid along a path 110 above the substrate 20. The processing liquid includes etching solutions, cleaning solutions, deionized water, etc. As Figures 2 to 5 shown, the cleaning device 10 includes a first nozzle 101, a second nozzle 104, a mask 103, and an extension plate 102.

[0037] In one embodiment, as can be seen from Figures 2 to 5 the first nozzle 101 is connected to the first pipeline 105. The first pipeline 105 can be a deionized water pipeline, and the second nozzle 104 is connected to two pipelines, which are the second pipeline 106 and the third pipeline 107 respectively. The second pipeline 106 can be a gas pipeline, and the third pipeline 107 can be a liquid pipeline. The gas pipeline 105 can supply gases, such as high-purity air, nitrogen, and other inert gases, and the third pipeline 107 can supply solutions such as cleaning solutions and etching solutions to facilitate the cleaning of the substrate 20, but it is not limited thereto. It is also possible that both the second pipeline 106 and the third pipeline 107 supply solutions, or one of them supplies deionized water.

[0038] In addition, as Figures 2 to 5 shown, the cleaning device 10 further includes an extension arm 108 and a driving unit 109. One end of the extension arm 108 is connected to the driving unit 109, and the first nozzle 101 and the second nozzle 104 are arranged at the other end of the extension arm 108. Therefore, the driving unit 109 can cause the cleaning device 10 to spray the processing liquid along a preset path above the substrate 20. In addition, when the cleaning device 10 is not needed, the driving unit 109 can also cause the cleaning device 10 to return to the standby position to avoid interfering with the substrate 20.

[0039] In one embodiment, the mask 103 and the extension plate 102 can be integrally provided, but it is not limited thereto. They can also be provided in other ways. In addition, in one embodiment, as Figures 6 to 8 shown, the mask 103 can further include a mask side wall 1031 to prevent the fluid provided by the second nozzle 104 accommodated in the mask 103 from splashing.

[0040] In one embodiment, asFigures 1 to 5 As shown in any of the figures, the extension plate 102 has an arc-shaped outer periphery, which can reduce stress concentration, thereby slowing down the damage caused by the extension plate 102 colliding with other objects during control or other accidents.

[0041] Furthermore, the width of the extension plate 102 ranges from 2 to 10 cm, and the length ranges from 2 to 12 cm; in a preferred embodiment, the width of the extension plate 102 ranges from 4 to 6 cm, and the length ranges from 3 to 5 cm; in an optimal embodiment, the width of the extension plate 102 is approximately 5 cm, and the length is approximately 4 cm.

[0042] In one embodiment, as Figure 1 shown, the second nozzle 104 can move along the cleaning path 110. For example, the cleaning device 10 can provide cleaning liquid medicine and gas to the substrate 20 along an arc-shaped path 110 above the substrate 20 to clean the substrate 20. At the same time, the first nozzle 101 can provide deionized water (DI water) to the substrate 20, but not limited thereto. At this time, the cleaning liquid medicine may splash and contaminate the cavity of the substrate processing equipment 1.

[0043] Therefore, referring to Figures 6 to 8 , the extension plate 102 provided on the peripheral side of the first nozzle 101 can prevent the splash generated by the cleaning liquid medicine. Further explanation, the extension plate 102 extends towards the edge direction of the substrate 20, so that the above-mentioned cleaning liquid medicine can be prevented from splashing towards Figure 1 the recovery ring 32 of the substrate processing equipment 1 in

[0044] Furthermore, in this embodiment, the distance between the first nozzle 101 and the second nozzle 104 from the substrate 20 can be 10 mm, but not limited thereto. In this embodiment, the substrate 20 can be a wafer product with a high aspect ratio composed of (1) chip to chip (C2C) stacking, (2) chip to wafer (C2W) stacking, and (3) wafer to wafer (W2W) stacking. Therefore, there will be grooves 202 between the grains 201 on the substrate 20. It is worth mentioning that the grooves 202 may be generated due to the above-mentioned wafer stacking, or may be generated due to the need of the process for cutting. Due to the formation of deeper grooves 202, the surface of the substrate 20 is no longer flat, resulting in the occurrence of splashing. Although the mask 103 with the mask sidewall 1031 already has the effect of preventing splashing, due to the characteristics of the high aspect ratio of the wafer product, splashing of the cleaning liquid medicine will still occur during cleaning. Therefore, an extension plate 102 needs to be added to solve this problem.

[0045] In other embodiments, when only the first nozzle 101 is used to provide deionized water for rinsing the above-mentioned high aspect ratio wafer product, the extension plate 102 can still prevent the deionized water from splashing onto the recovery ring 32 of the substrate processing apparatus 1.

[0046] Furthermore, in this embodiment, the distance between the first nozzle 101 and the substrate 20 will be greater than 10 mm. At this time, the splashing problem will be more serious, and the mask 103 cannot have any effect of reducing the splashing caused by the fluid provided by the first nozzle 101. Therefore, the extension plate 102 is needed to solve the splashing problem.

[0047] In one embodiment, the extension plate 102 can also have different shapes. For example, in addition to the above-mentioned plate shape, as Figure 7 shown, the extension plate 102 can also include an extension plate side wall 1021. Additionally, in other embodiments, the material or surface of the extension plate 102 can also be adjusted. For example, the extension plate 102 can be formed of a porous material or a water-absorbing material. Additionally, as Figure 8 shown, the surface of the extension plate 102 facing the substrate 20 can be set to an arc shape to prevent back-splashing.

[0048] In summary, in the present application, even if there are relatively deep grooves between the grains, or the distance between the nozzle and the grains is relatively far, the present application can still prevent the cleaning solution from back-splashing, thereby avoiding the contamination of the cavity during cleaning.

[0049] The above is only illustrative and not restrictive. Any equivalent modifications or changes made without departing from the spirit and scope of the present application shall be included in the appended claims for patent.

Claims

1. A cleaning device, characterized in that, Comprising: A first nozzle that provides a process liquid along a path toward a substrate; And An extension plate disposed around the first nozzle and extending in a direction toward an edge of the substrate.

2. The cleaning device according to claim 1, wherein Further comprising a mask and a second nozzle, the mask being connected to the extension plate and the second nozzle being received in the mask.

3. The cleaning device according to claim 2, wherein, The second nozzle is connected to two pipelines.

4. The cleaning device according to claim 3, characterized in that, The two pipelines are respectively a gas pipeline and a liquid pipeline.

5. The cleaning device according to claim 4, characterized in that Further comprising an extension arm and a driving unit, one end of the extension arm being connected to the driving unit, and the first nozzle and the second nozzle being disposed at the other end of the extension arm.

6. The cleaning device according to claim 1, characterized in that, The first nozzle is connected to a deionized water pipeline.

7. The cleaning device according to claim 1, characterized in that The extension plate has an arc-shaped outer periphery.

8. The cleaning device according to claim 1, characterized in that, The width of the extension plate is between 2 and 10 cm, and the length is between 2 and 12 cm.

9. A substrate processing apparatus, characterized in that, Comprising: A substrate holding part for holding a substrate; And A cleaning device that sprays a process liquid along a path above the substrate and includes: A first nozzle that provides the process liquid along a path toward a substrate; And An extension plate disposed around the first nozzle and extending in a direction toward an edge of the substrate.

10. The substrate processing apparatus according to claim 9, wherein The cleaning device further comprises a mask and a second nozzle, the mask being connected to the extension plate and the second nozzle being received in the mask.

11. The substrate processing apparatus according to claim 10, wherein, The second nozzle is connected to two pipelines.

12. The substrate processing apparatus according to claim 11, wherein, The two pipelines are respectively a gas pipeline and a liquid pipeline.

13. The substrate processing apparatus according to claim 12, wherein, The cleaning device further comprises an extension arm and a driving unit, one end of the extension arm being connected to the driving unit, and the first nozzle and the second nozzle being disposed at the other end of the extension arm.

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