Doped gas regulation and control equipment and method for wafer production

Abstract

The invention provides doped gas regulation and control equipment for wafer production and a regulation and control method, and belongs to the technical field of wafer production.The doped gas regulation and control equipment for wafer production comprises a reaction bin, a tray and a plurality of wafers located on the tray and further comprises a partition plate, a detection module, a heating module, a gas inlet module and a control unit; through the arrangement of the heating assembly, when the temperature detected by the third temperature sensor reaches the reaction temperature and the temperature detected by the fourth temperature sensor reaches the reaction temperature, the central processing unit can control the bidirectional electric lead screw module to rotate reversely, and when the temperature detected by the third temperature sensor does not reach the reaction temperature, the bidirectional electric lead screw module rotates reversely. When the temperature detected by a fourth temperature sensor reaches the reaction temperature, the central processing unit can control the bidirectional electric lead screw module to rotate forwards, the bidirectional electric lead screw module can be controlled to rotate forwards and backwards through the temperature distribution of the wafer, the heating position of the corresponding heating rod can be adjusted, and the uniformity of the surface temperature of the wafer is improved.

Description

Technical Field

[0001] The present invention belongs to the technical field of wafer production, and particularly relates to a doping gas regulation device and a regulation method for wafer production. Background Art

[0002] Wafer manufacturing is a high-precision and high-tech manufacturing process, which is one of the most critical links in the semiconductor chip industry. Among them, epitaxial growth refers to growing a single crystal layer with certain requirements and the same crystal orientation as the substrate on a single crystal substrate (substrate). There are various methods for growing the epitaxial layer, but the most commonly used is the chemical vapor deposition process. Process gases are formed by hydrogen carrying silicon tetrachloride or trichlorosilane, silane or dichlorosilane, etc., and enter the reaction chamber with a silicon substrate. High-temperature chemical reactions occur in the reaction chamber, reducing or thermally decomposing the silicon-containing reaction gases. The generated silicon atoms are deposited on the surface of the substrate silicon to form an epitaxial layer.

[0003] Chinese Patent with Application No. CN202410924237.2 discloses a vapor deposition device and a wafer temperature adjustment method thereof, which relates to the technical field of semiconductor devices. The vapor deposition device includes a tray, a chamber top cover, and a flow guide plate. The flow guide plate is arranged between the tray and the chamber top cover and is opposite to the tray. A reaction area is formed between the flow guide plate and the tray, and a temperature adjustment area is formed between the flow guide plate and the chamber top cover. The control unit adjusts the thermal conductivity of the heat transfer gas injected into the temperature adjustment area based on the radial temperature distribution result of the wafer. The wafer includes a central area and an edge area surrounding the central area. The flow guide plate includes an annular intermediate area corresponding to the position of the central area. Before and after adjusting the thermal conductivity of the heat transfer gas, the temperature change range of the annular intermediate area is greater than that of other areas of the flow guide plate. The invention can effectively improve the uniformity of the wafer surface temperature, ensure that the physical and chemical properties of the thin film grown on the wafer surface meet the process requirements, and greatly improve the yield of wafer processing.

[0004] However, when the wafer is heated, the edge of the wafer is directly exposed to the environment of the reaction chamber. The heat of the wafer edge is dissipated faster through radiation and convection than that of the central area of the wafer, resulting in uneven heating of the wafer, uneven thickness of the thin film deposited on the wafer surface. Moreover, during the doping gas process, if the process gas is directly injected into the reaction chamber, the lower-temperature process gas will disrupt the internal temperature environment of the reaction chamber and affect the reaction efficiency. The doped process gas can be heated to a certain temperature by a preheater and then injected into the reaction chamber. However, the preheated process gas will have a temperature loss during transportation, resulting in the gas entering the reaction chamber not reaching the required preheated temperature, which will also affect the efficiency.

[0005] Therefore, in order to solve the above problems, a doping gas regulation device and a regulation method for wafer production are needed. Summary of the Invention

[0006] The purpose of the present invention is to provide a doping gas regulation device and a regulation method for wafer production, aiming to solve the problems in the prior art that when the wafer is heated, the edge of the wafer is directly exposed to the environment of the reaction chamber, and the heat dissipation speed through radiation and convection is faster than that of the central area of the wafer, resulting in uneven heating of the wafer itself and uneven thickness of the thin film deposited on the wafer surface. In addition, during the doping gas process, if the process gas is directly injected into the reaction chamber, the process gas at a lower temperature will disrupt the internal temperature environment of the reaction chamber and affect the reaction efficiency. The doped process gas can be heated to a certain temperature by a preheater and then injected into the reaction chamber. However, the preheated process gas will cause temperature loss during transportation, resulting in the gas entering the reaction chamber not reaching the required preheated temperature, which will also affect the working efficiency.

[0007] To achieve the above object, the present invention provides the following technical solutions: A doping gas regulation device for wafer production, including a reaction chamber, a tray, and a plurality of wafers arranged on the tray, further including: A partition plate, fixedly connected to the inner wall of the reaction chamber, capable of dividing the interior of the reaction chamber into a heating chamber and a reaction chamber, and a diversion chamber is provided inside the partition plate; A detection module, the detection module includes a first detection unit and a second detection unit. The first detection unit is used to detect the temperature of the process gas inside the heating chamber and the reaction chamber, and the second detection unit is used to detect the radial temperature distribution of the wafer; A heating module, used to heat the wafers on the tray; An air intake module, the air intake module includes a first air intake unit and a second air intake unit. The first air intake unit can preheat the process gas and inject it into the heating chamber, and the second air intake unit can inject a heat-conducting gas into the diversion chamber; A control unit, the control unit can adjust the temperature of the heat-conducting gas injected into the diversion chamber by the second air intake unit based on the gas temperature result detected by the first detection unit, and the control unit can adjust the heating position of the wafer by the heating module based on the temperature result of the wafer detected by the second detection unit.

[0008] Preferably, an intake pipe communicating the heating chamber and the reaction chamber is provided inside the partition plate. The first detection unit includes a first temperature sensor disposed inside the heating chamber and a second temperature sensor disposed inside the reaction chamber. The first temperature sensor is used to detect the temperature of the process gas entering the reaction chamber from inside the heating chamber, and the second temperature sensor is used to detect the temperature of the process gas inside the reaction chamber. The second detection unit includes a third temperature sensor and a fourth temperature sensor disposed at the bottom of the partition plate. The wafer includes a central region and an edge region, and the third temperature sensor and the fourth temperature sensor can respectively detect the temperatures of the central region and the edge region of the wafer.

[0009] Preferably, the heating module includes multiple groups of heating components disposed at the bottom of the tray. The multiple groups of heating components correspond to the positions of the multiple wafers one by one. Each group of heating components is composed of at least four heating rods. Among them, two adjacent heating rods can heat the central region of the wafer, and two non-adjacent heating rods can heat the edge region of the wafer. A bidirectional electric screw module is provided at the bottom of each group of heating components. Starting the bidirectional electric screw module can move two adjacent heating rods in the corresponding heating component away from or towards each other.

[0010] Preferably, the first intake unit includes a preheating device and an intake device. After the process gas is heated to the preheating value by the preheating device, it can be injected into the heating chamber through the intake device. The second intake unit includes an adjusting device and a recycling device. The heat-conducting gas is composed of a first mixed gas and a second mixed gas. The first mixed gas and the second mixed gas can be mixed by the adjusting device to form the heat-conducting gas, which can pass through the diversion chamber and enter the recycling device for reuse. The temperature of the first mixed gas is higher than that of the second mixed gas. By adjusting the adjusting device, the mixing ratio of the first mixed gas and the second mixed gas can be adjusted to achieve the adjustment of the temperature of the heat-conducting gas.

[0011] Preferably, the control unit includes a central processing unit. The central processing unit can control the preheating temperature of the preheating device, the central processing unit can control the adjusting device to adjust the mixing ratio of the first mixed gas and the second mixed gas, the central processing unit can receive and process the detection values of the first temperature sensor, the second temperature sensor, the third temperature sensor, and the fourth temperature sensor, and the central processing unit can respectively control the working states of each bidirectional electric screw module.

[0012] A control method for wafer production: The reaction temperature of the process gas is set by the central processing unit. When the temperature detected by the third temperature sensor corresponding to the central area of the wafer reaches the reaction temperature, while the temperature detected by the fourth temperature sensor corresponding to the edge area of the wafer does not reach the reaction temperature, the central processing unit can control the corresponding bidirectional electric screw module to reverse, enabling the two heating rods that are close to each other in the corresponding heating component to move away from each other and be in contact with the two heating rods that are far from each other respectively.

[0013] Preferably, when the two heating rods that are close to each other in the heating component are in contact with the two heating rods that are far from each other, if the temperature detected by the third temperature sensor corresponding to the central area of the wafer does not reach the reaction temperature, while the temperature detected by the fourth temperature sensor corresponding to the edge area of the wafer reaches the reaction temperature, the central processing unit can control the corresponding bidirectional electric screw module to rotate forward, enabling the two heating rods that are close to each other and in contact with the two heating rods that are far from each other in the corresponding heating component to move closer to each other and reheat the central area of the wafer.

[0014] Preferably, when the first temperature sensor detects that the temperature of the process gas entering the reaction chamber is lower than the preheating temperature, the central processing unit can control the regulating device to increase the proportion of the first mixed gas and decrease the proportion of the second mixed gas, thereby increasing the temperature of the heat-conducting gas.

[0015] Preferably, when the first temperature sensor detects that the temperature of the process gas entering the reaction chamber is higher than the preheating temperature, the central processing unit can control the regulating device to decrease the proportion of the first mixed gas and increase the proportion of the second mixed gas, thereby decreasing the temperature of the heat-conducting gas.

[0016] Preferably, a temperature threshold is set by the central processing unit. When the second temperature sensor detects that the temperature of the process gas inside the reaction chamber is higher than the temperature threshold, the central processing unit can control the preheating device to decrease the preheating temperature, and the central processing unit can control the regulating device to adjust the mixing ratio of the first mixed gas and the second mixed gas, thereby decreasing the temperature of the heat-conducting gas and cooling the process gas inside the heating.

[0017] Compared with the prior art, the beneficial effects of the present invention are: 1. Through the setting of the heating component, when the third temperature sensor detects that the temperature of the corresponding wafer center area reaches the set reaction temperature, while the fourth temperature sensor detects that the temperature of the corresponding wafer edge area does not reach the set reaction temperature, the central processor can control the bidirectional electric screw rod module to reverse, enabling the corresponding heating rod in the corresponding heating component to change the heating position and move from the center area towards the edge area, which can improve the heating efficiency of the edge area. When the wafer is detected again, when the third temperature sensor detects that the temperature of the corresponding wafer center area does not reach the set reaction temperature, while the fourth temperature sensor detects that the temperature of the corresponding wafer edge area reaches the set reaction temperature, the central processor can control the bidirectional electric screw rod module to rotate forward, enabling the corresponding heating rod in the corresponding heating component to move in a mutually separated direction and reheat the center area of the wafer. Thus, the central processor can control the bidirectional electric screw rod module to rotate forward and reverse according to the temperature distribution of the wafer, adjust the heating position of the corresponding heating rod, improve the uniformity of the wafer surface temperature, and improve the quality of epitaxial layer growth.

[0018] 2. Through the setting of the adjustment device, when the first temperature sensor detects that the temperature of the process gas entering the reaction chamber is higher than the preheating temperature, the central processor controls the adjustment device to reduce the proportion of the first mixed gas and increase the proportion of the second mixed gas, so as to cool the overall heat-conducting gas and cool the process gas inside the heating chamber. When the first temperature sensor detects that the temperature of the process gas entering the reaction chamber is lower than the preheating temperature, the central processor controls the adjustment device to increase the proportion of the first mixed gas and reduce the proportion of the second mixed gas, so as to heat the overall heat-conducting gas and heat the process gas inside the heating chamber. Thus, by detecting the temperature of the process gas entering the reaction chamber by the first temperature sensor, the proportion of the first mixed gas and the second mixed gas entering the adjustment device is adjusted, the temperature of the heat-conducting gas is adjusted, the temperature loss during the transportation of the process gas is compensated, and it is ensured that the process gas injected into the reaction chamber from the inside of the heating chamber reaches the preheating temperature, shortening the heating time and improving the reaction efficiency.

[0019] 3. Through the setting of the second temperature sensor, when the second temperature sensor detects that the temperature of the process gas inside the reaction chamber is higher than the temperature threshold, the central processor can control the preheating device to reduce the preheating temperature and simultaneously control the proportion of the first mixed gas and the second mixed gas in the adjustment device so that the temperature of the heat-conducting gas is the same as the preheating temperature, which can cool the process gas entering the heating chamber. The cooled process gas enters the reaction chamber and can neutralize and cool the gas inside the reaction chamber, avoiding the temperature of the process gas inside the reaction chamber being higher than the temperature threshold and preventing the reaction deposition of the process gas at other positions inside the reaction chamber. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] The accompanying drawings are used to provide a further understanding of the present invention and form a part of the specification. The embodiments of the present invention are used to explain the present invention and do not constitute a limitation to the present invention. In the accompanying drawings: Figure 1 is a schematic flow chart of the present invention; Figure 2 is a schematic diagram of the control device of the present invention; Figure 3 is a structural distribution diagram of the central region and the edge region of the wafer of the present invention; Figure 4 is a distribution schematic diagram of the third temperature sensor and the fourth temperature sensor of the present invention.

[0021] In the figure: 1, reaction chamber; 2, tray; 3, wafer; 31, central region; 32, edge region; 4, partition board; 41, heating chamber; 42, reaction chamber; 43, diversion chamber; 44, intake pipe; 51, first temperature sensor; 52, second temperature sensor; 53, third temperature sensor; 54, fourth temperature sensor; 61, heating component; 62, heating rod; 63, bidirectional electric screw module; 71, preheating device; 72, intake device; 73, adjusting device; 74, circulating device; 8, central processing unit. Detailed implementation manners

[0022] Next, the technical solutions in the embodiments of the present invention will be clearly and completely described in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.

[0023] Embodiment 1 There are various methods for growing an epitaxial layer on a wafer, but the most commonly used is the chemical vapor deposition epitaxy process, that is, process gases enter a reaction chamber provided with a silicon substrate, and high-temperature chemical reactions occur in the reaction chamber to reduce or thermally decompose the reaction gases. The generated atoms are deposited on the surface of the substrate silicon to form an epitaxial layer. However, during this process, when the wafer is heated, the edge of the wafer is directly exposed to the environment of the reaction chamber, and the heat of the wafer edge is dissipated faster by radiation and convection than the central region of the wafer, resulting in uneven heating of the wafer and uneven deposition thickness of the thin film on the wafer surface, affecting the quality of epitaxial layer growth.

[0024] Please refer to Figures 1 to 4 as shown, the present invention provides the following technical solutions: A doping gas regulation device for wafer production, including a reaction chamber 1, a tray 2, and a plurality of wafers 3 disposed on the tray 2, further including: The partition plate 4 is fixedly connected to the inner wall of the reaction chamber 1, and can separate the interior of the reaction chamber 1 into a heating chamber 41 and a reaction chamber 42, and a guide chamber 43 is provided inside the partition plate 4; A detection module, the detection module includes a first detection unit and a second detection unit, the first detection unit is used to detect the temperature of the process gas inside the heating chamber 41 and the reaction chamber 42, and the second detection unit is used to detect the radial temperature distribution of the wafer 3; A heating module, used for heating the wafer 3 on the tray 2; An air intake module, the air intake module includes a first air intake unit and a second air intake unit, the first air intake unit can preheat the process gas and inject it into the heating chamber 41, and the second air intake unit can inject heat-conducting gas into the guide chamber 43; The control unit can adjust the temperature of the heat-conducting gas injected into the guide cavity 43 by the second air inlet unit based on the gas temperature result detected by the first detection unit, and the control unit can adjust the heating position of the heating module on the wafer 3 based on the temperature result detected by the second detection unit.

[0025] The process gas is formed by hydrogen carrying silicon tetrachloride or trichlorosilane, silane or dichlorosilane; The tray 2 is usually made of sintered graphite and has good thermal conductivity. A driving device (not shown in the figure) is provided at the bottom of the tray 2. Starting the driving device can enable the tray 2 to drive the wafer 3 to rotate around the center of the tray 2. A driving airway (not shown in the figure) is also provided in the tray 2. A gas with a certain pressure is introduced between the wafer 3 and the tray 2 through the driving airway, so that the wafer 3 can be lifted up by the gas and leave the surface of the tray 2, and then rotate around its center after being suspended at a certain height. This is the prior art and will not be described in detail.

[0026] The control device also includes an exhaust device, which is used to discharge the process gas and reaction by-products that have not reacted in the reaction chamber 42. This is the existing technology and will not be described in detail.

[0027] An air inlet pipe 44 connecting the heating chamber 41 and the reaction chamber 42 is provided inside the partition plate 4. The second detection unit includes a third temperature sensor 53 and a fourth temperature sensor 54 arranged at the bottom of the partition plate 4. The wafer 3 includes a central area 31 and an edge area 32. The third temperature sensor 53 and the fourth temperature sensor 54 can respectively detect the temperatures of the central area 31 and the edge area 32 of the wafer 3.

[0028] The heating module includes multiple groups of heating components 61 arranged at the bottom of the tray 2. The multiple groups of heating components 61 correspond one-to-one with the positions of multiple wafers 3. Each group of heating components 61 is composed of at least four heating rods 62. Among them, two adjacent heating rods 62 can heat the central area 31 of the wafer 3, and two non-adjacent heating rods 62 can heat the edge area 32 of the wafer 3. A bidirectional electric screw rod module 63 is provided at the bottom of each group of heating components 61. Starting the bidirectional electric screw rod module 63 can make the two adjacent heating rods 62 in the corresponding heating component 61 move away from or close to each other.

[0029] The bidirectional electric screw rod module 63 is composed of parts such as a motor, a double-threaded screw rod, and two moving sliders. The two moving sliders are respectively fixedly connected to the two adjacent heating rods 62 in the corresponding heating component 61. Starting the forward and reverse rotation of the bidirectional electric screw rod module 63 can drive the two moving sliders on the double-threaded screw rod to move away from or close to each other through the motor, that is, the moving directions of the two moving sliders are opposite. The heating rod 62 and the bidirectional electric screw rod module 63 are both prior arts and will not be elaborated here.

[0030] Under normal conditions, that is, when the device is not working, the two moving sliders in the bidirectional electric screw rod module 63 are in contact with each other. The two adjacent heating rods 62 in the heating component 61 can heat the central area 31 of the wafer, and the two non-adjacent heating rods 62 can heat the edge area 32 of the wafer.

[0031] The control unit includes a central processing unit 8. The central processing unit 8 can control the preheating temperature of the preheating device 71. The central processing unit 8 can control the adjusting device 73 to adjust the mixing ratio of the first mixed gas and the second mixed gas. The central processing unit 8 can receive and process the detection values of the first temperature sensor 51, the second temperature sensor 52, the third temperature sensor 53, and the fourth temperature sensor 54. The central processing unit 8 can respectively control the working states of each bidirectional electric screw rod module 63.

[0032] The central processing unit 8 is electrically connected to the preheating device 71, the bidirectional electric screw rod module 63, the adjusting device 73, the first temperature sensor 51, the second temperature sensor 52, the third temperature sensor 53, and the fourth temperature sensor 54 by existing means, which will not be elaborated here.

[0033] Before the process of growing an epitaxial layer on the wafer, the reaction temperature of the process gas is first set by the central processing unit 8. When the temperature detected by the third temperature sensor 53 corresponding to the central region 31 of the wafer 3 reaches the reaction temperature, while the temperature detected by the fourth temperature sensor 54 corresponding to the edge region 32 of the wafer 3 does not reach the reaction temperature, the central processing unit 8 can control the corresponding bidirectional electric screw module 63 to reverse, which can make the two mutually approaching heating rods 62 in the corresponding heating assembly 61 move in the direction away from each other, and can respectively contact the two mutually separated heating rods 62.

[0034] When the two mutually approaching heating rods 62 in the heating assembly 61 contact the two mutually separated heating rods 62, if the temperature detected by the third temperature sensor 53 corresponding to the central region 31 of the wafer 3 does not reach the reaction temperature, while the temperature detected by the fourth temperature sensor 54 corresponding to the edge region 32 of the wafer 3 reaches the reaction temperature, the central processing unit 8 can control the corresponding bidirectional electric screw module 63 to rotate forward, which can make the two mutually approaching heating rods 62 in the corresponding heating assembly 61 move in the direction of approaching each other, and reheat the central region 31 of the wafer 3.

[0035] When the values detected by the third temperature sensor 53 and the fourth temperature sensor 54 both reach the reaction temperature of the process gas, the heating rods 62 in the corresponding heating assembly 61 maintain their current heating positions and do not change anymore; When the surface of the wafer 3 reaches the reaction temperature, the process gas enters the interior of the reaction chamber 42, can contact the surface of the wafer 3, react, and deposit to form an epitaxial layer.

[0036] Since the edge of the wafer 3 is directly exposed to the environment of the reaction chamber 42, the heat of the edge of the wafer 3 is dissipated faster by radiation and convection than the central region of the wafer. Therefore, the temperature of the central region 31 of the wafer 3 is detected first. Also, because the two mutually approaching heating rods 62 in the heating assembly 61 move in the direction away from each other, can respectively contact the two mutually separated heating rods 62, can change the heating positions of the two mutually approaching heating rods 62 in the corresponding heating assembly 61, can move from the central region 31 to the edge region 32, and can improve the heating efficiency of the edge region 32, resulting in an increase in the temperature of the edge region 32. Therefore, the temperature of the edge region 32 of the wafer 3 is detected later.

[0037] Such as Figure 4As shown, the third temperature sensor 53 and the fourth temperature sensor 54 can always correspond to the central region 31 and the edge region 32 of the wafer 3. When the tray 2 revolves and the wafer 3 rotates, the third temperature sensor 53 and the fourth temperature sensor 54 can respectively detect the temperatures of the central region 31 and the edge region 32 of different wafers 3. By detecting the temperature distributions of the central region 31 and the edge region 32 of different wafers 3, the heating positions of the two heating rods 62 that are close to each other in the corresponding heating assembly 61 for heating the wafer 3 can be adjusted to achieve individual control and improve the temperature uniformity of each wafer 3.

[0038] For example, if there are six wafers 3 on the tray 2, then when the tray 2 rotates one circle, the third temperature sensor 53 and the fourth temperature sensor 54 can both detect six groups of data. When rotating one more circle, the third temperature sensor 53 and the fourth temperature sensor 54 can detect six groups of data again. Thus, through the rotation of the tray 2, intermittent detection of different wafers 3 can be achieved. Each time of detection, the central processing unit 8 can adjust the heating positions of the heating rods 62 in the corresponding heating assembly 61 according to the detection results of the third temperature sensor 53 and the fourth temperature sensor 54 to improve the temperature uniformity of each wafer 3.

[0039] Before the process of growing the epitaxial layer of the wafer 3, the reaction temperature of the process gas is first set by the central processing unit 8. During use, the third temperature sensor 53 and the fourth temperature sensor 54 respectively transmit the temperature values detected in the central region 31 and the edge region 32 of the wafer 3 to the central processing unit 8. When the third temperature sensor 53 detects that the temperature in the central region 31 of the wafer 3 reaches the set reaction temperature, while the fourth temperature sensor 54 detects that the temperature in the edge region 32 of the wafer 3 does not reach the set reaction temperature, the central processing unit 8 can control the bidirectional electric screw module 63 to reverse, which can make the two heating rods 62 that are close to each other in the corresponding heating component 61 move away from each other, and contact the two heating rods 62 that are away from each other respectively, which can make the heating position of the heating rods 62 that are close to each other in the corresponding heating component 61 change, that is, move from the central region 31 to the edge region 32, which can improve the heating efficiency of the edge region 32. When the wafer 3 is detected again, due to the contact between the heating rods 62 that are close to each other and the two heating rods 62 that are away from each other in the corresponding heating component 61, the temperature of the edge region 32 of the wafer 3 will increase, and the temperature of the central region 31 of the wafer 3 will decrease. When the third temperature sensor 53 detects that the temperature in the central region 31 of the wafer 3 does not reach the set reaction temperature, while the fourth temperature sensor 54 detects that the temperature in the edge region 32 of the wafer 3 reaches the set reaction temperature, the central processing unit 8 can control the bidirectional electric screw module 63 to rotate forward, which can make the two heating rods 62 that are close to each other in the corresponding heating component 61 move away from each other, and reheat the central region 31 of the wafer. Thus, by controlling the forward and reverse rotation of the bidirectional electric screw module 63 to adjust the heating positions of the corresponding two heating rods 62, the uniformity of the surface temperature of the wafer 3 is improved, and the quality of the epitaxial layer growth is improved.

[0040] In summary, with the arrangement of the heating component 61 in the present invention, when the third temperature sensor 53 detects that the temperature of the central region 31 of the corresponding wafer 3 reaches the set reaction temperature, while the fourth temperature sensor 54 detects that the temperature of the edge region 32 of the corresponding wafer 3 does not reach the set reaction temperature, the central processor 8 can control the bidirectional electric screw module 63 to reverse, enabling the corresponding heating rod 62 in the corresponding heating component 61 to change the heating position, move from the central region 31 towards the edge region 32, improving the heating efficiency of the edge region 32. When the wafer 3 is detected again, when the third temperature sensor 53 detects that the temperature of the central region 31 of the corresponding wafer 3 does not reach the set reaction temperature, while the fourth temperature sensor 54 detects that the temperature of the edge region 32 of the corresponding wafer 3 reaches the set reaction temperature, the central processor 8 can control the bidirectional electric screw module 63 to rotate forward, enabling the corresponding heating rod 62 in the corresponding heating component 61 to move in a mutually away direction, reheating the central region 31 of the wafer. Thus, the forward and reverse rotations of the bidirectional electric screw module 63 can be controlled based on the temperature distribution of the wafer 3, the heating position of the corresponding heating rod 62 can be adjusted, the uniformity of the surface temperature of the wafer 3 can be improved, and the quality of epitaxial layer growth can be enhanced.

[0041] Embodiment 2 Based on the above embodiment, during the process of doping process gas, if the process gas is directly injected into the reaction chamber, the process gas at a lower temperature will disrupt the internal temperature environment of the reaction chamber and affect the reaction efficiency. Therefore, the doped process gas can be heated to a certain temperature by a preheater and then injected into the internal of the reaction chamber. However, the preheated process gas will experience temperature loss during transportation, resulting in the gas entering the internal of the reaction chamber not reaching the required preheated temperature, which will also affect the efficiency.

[0042] Please refer to Figures 1 to 4 As shown, the first detection unit includes a first temperature sensor 51 disposed inside the heating chamber 41 and a second temperature sensor 52 disposed inside the reaction chamber 42. The first temperature sensor is used to detect the temperature of the process gas entering the internal of the reaction chamber 42 from the heating chamber 41, and the second temperature sensor 52 is used to detect the temperature of the process gas inside the reaction chamber 42; As Figure 1 shown, the position of the first temperature sensor 51 is set corresponding to the intake pipe 44 to improve the accuracy of detecting the temperature of the process gas entering the internal of the reaction chamber 42. Since the flow rate at the intake and exhaust ports of the reaction chamber 42 is relatively fast, resulting in a temperature lower than that at the center of the reaction chamber 42, the second temperature sensor 52 is disposed at the bottom center of the partition plate 4 to improve the accuracy of detecting the temperature of the process gas inside the reaction chamber 42.

[0043] The first intake unit includes a preheating device 71 and an intake device 72. After the process gas is heated by the preheating device 71 to reach the preheating value, it can be injected into the interior of the heating chamber 41 through the intake device 72. The second intake unit includes an adjusting device 73 and a recycling device 74. The heat-conducting gas is composed of a first mixed gas and a second mixed gas. The first mixed gas and the second mixed gas can be mixed by the adjusting device 73 to form the heat-conducting gas, which can pass through the diversion chamber 43 and enter the interior of the recycling device 74 for reuse. The temperature of the first mixed gas is higher than that of the second mixed gas. By adjusting the adjusting device 73, the mixing ratio of the first mixed gas and the second mixed gas can be adjusted, and the temperature of the heat-conducting gas can be regulated.

[0044] The preheating temperature of the preheating device 71 can be controlled by the central processing unit 8.

[0045] When the heat-conducting gas is injected into the interior of the diversion chamber 43, it can conduct heat through the partition plate 4, heat the process gas entering the interior of the heating chamber 41, compensate for the temperature, and enable the process gas injected from the interior of the heating chamber 41 into the interior of the reaction chamber 42 to reach the preheating temperature.

[0046] The adjusting device 73 can be a proportional valve to adjust the mixing ratio of the first mixed gas and the second mixed gas. The recycling device 74 can be a recycling gas separator for separating the heat-conducting gas back into the first mixed gas and the second mixed gas for reuse. The intake device 72, the adjusting device 73, and the recycling device 74 are all prior arts and will not be elaborated here.

[0047] The preheating device 71 can adopt a gas heater. The temperature at which the preheating device 71 heats the process gas should be lower than the temperature at which the process gas reacts, and a temperature floating space should be reserved. For example, if the temperature at which the process gas reacts is 800 °C, then the temperature at which the preheating device 71 heats the process gas can be 750 °C, and the reserved temperature floating space is 50 °C, to avoid the preheating temperature being relatively close to the reaction temperature and prevent the process gas from reacting and depositing during preheating.

[0048] When the first temperature sensor 51 detects that the temperature of the process gas entering the interior of the reaction chamber 42 is lower than the preheating temperature, the central processing unit 8 can control the adjusting device 73 to increase the proportion of the first mixed gas and decrease the proportion of the second mixed gas, thereby increasing the temperature of the heat-conducting gas.

[0049] When the first temperature sensor 51 detects that the temperature of the process gas entering the interior of the reaction chamber 42 is higher than the preheating temperature, the central processing unit 8 can control the adjusting device 73 to decrease the proportion of the first mixed gas and increase the proportion of the second mixed gas, thereby decreasing the temperature of the heat-conducting gas.

[0050] It should be noted that before the process of growing the epitaxial layer of the wafer, the preheating temperature of the preheating device 71 needs to be set according to the reaction temperature of the process gas. Moreover, the ratio of the first mixed gas and the second mixed gas is adjusted by the adjusting device 73 so that the temperature of the heat-conducting gas is consistent with the preheating temperature. During use, although the preheating device 71 can heat the process gas to the required preheating temperature when the process gas passes through the preheating device 71, when the process gas enters the interior of the heating chamber 41 from the gas inlet device 72, there will be a temperature loss, resulting in the process gas injected into the interior of the reaction chamber 42 from the interior of the heating chamber 41 not reaching the preheating temperature, which affects the reaction efficiency. Therefore, a first detection unit is provided. The numerical value of the temperature detected by the first temperature sensor 51 is transmitted to the central processing unit 8. When the first temperature sensor 51 detects that the temperature of the process gas entering the interior of the reaction chamber 42 does not reach the preheating temperature, the central processing unit 8 can control the adjusting device 73 to adjust the ratio of the first mixed gas and the second mixed gas. When the first temperature sensor 51 detects that the temperature of the process gas entering the interior of the reaction chamber 42 is higher than the preheating temperature, the central processing unit 8 controls the adjusting device 73 to reduce the ratio of the first mixed gas and increase the ratio of the second mixed gas, so as to cool the overall heat-conducting gas and cool the process gas in the heating chamber 41. When the first temperature sensor 51 detects that the temperature of the process gas entering the interior of the reaction chamber 42 is lower than the preheating temperature, the central processing unit 8 controls the adjusting device 73 to increase the ratio of the first mixed gas and reduce the ratio of the second mixed gas, so as to heat the overall heat-conducting gas and heat the process gas in the heating chamber 41. Thus, by detecting the temperature of the process gas entering the interior of the reaction chamber 42 by the first temperature sensor 51, the ratio of the first mixed gas and the second mixed gas entering the adjusting device 73 is adjusted, the temperature of the heat-conducting gas is adjusted, the temperature loss during the transportation of the process gas is compensated, and it is ensured that the process gas injected into the interior of the reaction chamber 42 from the interior of the heating chamber 41 reaches the preheating temperature, shortening the heating time and improving the reaction efficiency.

[0051] In summary, through the setting of the adjustment device 73, when the first temperature sensor 51 detects that the temperature of the process gas entering the interior of the reaction chamber 42 is higher than the preheating temperature, the central processor 8 controls the adjustment device 73 to reduce the proportion of the first mixed gas and increase the proportion of the second mixed gas, thereby cooling the overall heat-conducting gas and being able to cool the process gas inside the heating chamber 41. When the first temperature sensor 51 detects that the temperature of the process gas entering the interior of the reaction chamber 42 is lower than the preheating temperature, the central processor 8 controls the adjustment device 73 to increase the proportion of the first mixed gas and reduce the proportion of the second mixed gas, thereby heating the overall heat-conducting gas and being able to heat the process gas inside the heating chamber 41. Thus, by detecting the temperature of the process gas entering the interior of the reaction chamber 42 with the first temperature sensor 51, the proportion of the first mixed gas and the second mixed gas entering the adjustment device 73 is adjusted, the temperature of the heat-conducting gas is adjusted, the temperature loss during the transportation of the process gas is compensated, ensuring that the process gas injected from the interior of the heating chamber 41 into the interior of the reaction chamber 42 reaches the preheating temperature, shortening the heating time, and improving the reaction efficiency.

[0052] Embodiment Three Based on the above embodiment, since the temperature of the heating component needs to be higher than the reaction temperature in order to make the temperature of the wafer on the tray reach the reaction temperature, the process gas entering the interior of the reaction chamber will heat up after approaching the heating component. If the pumping device is damaged at this time, the intake and exhaust balance inside the reaction chamber will be disrupted, and the temperature of the process gas inside the reaction chamber will become higher after long-term use, resulting in reaction deposition of the process gas at other positions inside the reaction chamber and affecting the use of the equipment.

[0053] Please refer to Figures 1 to 4 As shown, by setting a temperature threshold through the central processor 8, when the second temperature sensor 52 detects that the temperature of the process gas inside the reaction chamber 42 is higher than the temperature threshold, the central processor 8 can control the preheating device 71 to reduce the preheating temperature, and the central processor 8 can control the adjustment device 73 to adjust the mixing ratio of the first mixed gas and the second mixed gas, be able to reduce the temperature of the heat-conducting gas, and be able to cool the process gas inside the heating 41.

[0054] By setting a temperature threshold through the central processor 8, the temperature threshold should be lower than the reaction temperature and higher than the preheating temperature, which is used to ensure that the temperature of the process gas inside the reaction chamber 42 is lower than the reaction temperature and a temperature floating space needs to be reserved. For example, if the reaction temperature is 800 °C, then the temperature threshold can be set to 780 °C, reserving a floating space of 20 °C, always ensuring that the temperature of the process gas inside the reaction chamber 42 is lower than the reaction temperature.

[0055] It should be noted that since the temperature of the heating component 61 needs to be higher than the reaction temperature of the process gas in order to heat the surface temperature of the wafer 3 on the tray 2 to the reaction temperature, the process gas entering the interior of the reaction chamber 42 will heat up after approaching the heating component 61. If the pumping equipment is damaged at this time, the intake and exhaust balance inside the reaction chamber 42 will be disrupted, resulting in the inability to discharge the process gas inside the reaction chamber 42. Prolonged use will cause the temperature of the process gas inside the reaction chamber 42 to increase, leading to reaction deposition of the process gas at other positions inside the reaction chamber 42, affecting the use of the equipment. Therefore, a temperature threshold is set through the central processor 8. When the second temperature sensor 52 detects that the temperature of the process gas inside the reaction chamber 42 is higher than the temperature threshold, the central processor 8 can control the preheating device 71 to reduce the preheating temperature, and at the same time control the ratio of the first mixed gas and the second mixed gas in the regulating device 73 so that the temperature of the heat-conducting gas is the same as the preheating temperature, which can cool the process gas entering the interior of the heating chamber 41. The cooled process gas enters the interior of the reaction chamber 42 and can neutralize and cool the gas inside the reaction chamber 42, avoiding the temperature of the process gas inside the reaction chamber 42 being higher than the temperature threshold and preventing reaction deposition of the process gas at other positions inside the reaction chamber 42.

[0056] In summary, through the setting of the second temperature sensor 52 in the present invention, when the second temperature sensor 52 detects that the temperature of the process gas inside the reaction chamber 42 is higher than the temperature threshold, the central processor 8 can control the preheating device 71 to reduce the preheating temperature, and at the same time control the ratio of the first mixed gas and the second mixed gas in the regulating device 73 so that the temperature of the heat-conducting gas is the same as the preheating temperature, which can cool the process gas entering the interior of the heating chamber 41. The cooled process gas enters the interior of the reaction chamber 42 and can neutralize and cool the gas inside the reaction chamber 42, avoiding the temperature of the process gas inside the reaction chamber 42 being higher than the temperature threshold and preventing reaction deposition of the process gas at other positions inside the reaction chamber 42.

[0057] Finally, it should be noted that the above are only the preferred embodiments of the present invention and are not used to limit the present invention. Although the present invention has been described in detail with reference to the foregoing embodiments, for those skilled in the art, they can still modify the technical solutions recorded in the foregoing embodiments, or perform equivalent replacements for some of the technical features. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principle of the present invention shall be included within the protection scope of the present invention.

Claims

1. A doping gas regulation device for wafer production, comprising a reaction chamber (1), a tray (2), and a plurality of wafers (3) arranged on the tray (2), characterized in that, Further included are: A partition plate (4), fixedly connected to the inner wall of the reaction chamber (1), capable of dividing the interior of the reaction chamber (1) into a heating chamber (41) and a reaction chamber (42), and a diversion chamber (43) is provided inside the partition plate (4); A detection module, the detection module includes a first detection unit and a second detection unit, the first detection unit is used to detect the temperature of the process gas inside the heating chamber (41) and the reaction chamber (42), and the second detection unit is used to detect the radial temperature distribution of the wafer (3); A heating module, used to heat the wafer (3) on the tray (2); An air intake module, the air intake module includes a first air intake unit and a second air intake unit, the first air intake unit can preheat the process gas and inject it into the heating chamber (41), and the second air intake unit can inject a heat-conducting gas into the diversion chamber (43); A control unit, the control unit can adjust the temperature of the heat-conducting gas injected by the second air intake unit into the diversion chamber (43) based on the gas temperature result detected by the first detection unit, and the control unit can adjust the heating position of the heating module on the wafer (3) based on the temperature result of the wafer (3) detected by the second detection unit.

2. The doping gas regulation device for wafer production according to claim 1, characterized in that: An air inlet pipe (44) communicating the heating chamber (41) and the reaction chamber (42) is provided inside the partition plate (4), the first detection unit includes a first temperature sensor (51) arranged inside the heating chamber (41) and a second temperature sensor (52) arranged inside the reaction chamber (42), the first temperature sensor is used to detect the temperature of the process gas entering the reaction chamber (42) from the heating chamber (41), the second temperature sensor (52) is used to detect the temperature of the process gas inside the reaction chamber (42), the second detection unit includes a third temperature sensor (53) and a fourth temperature sensor (54) arranged at the bottom of the partition plate (4), the wafer (3) includes a central region (31) and an edge region (32), and the third temperature sensor (53) and the fourth temperature sensor (54) can respectively detect the temperatures of the central region (31) and the edge region (32) of the wafer (3).

3. The doping gas regulation device for wafer production according to claim 2, characterized in that: The heating module includes multiple groups of heating components (61) arranged at the bottom of the tray (2), and the multiple groups of heating components (61) correspond to the positions of the multiple wafers (3) one by one. Each group of heating components (61) is composed of at least four heating rods (62). Among them, two adjacent heating rods (62) can heat the central region (31) of the wafer (3), and two non-adjacent heating rods (62) can heat the edge region (32) of the wafer (3). A bidirectional electric screw module (63) is provided at the bottom of each group of heating components (61). Starting the bidirectional electric screw module (63) can make two adjacent heating rods (62) in the corresponding heating component (61) move away from or close to each other.

4. The doping gas control device for wafer production according to claim 3, wherein: The first intake unit includes a preheating device (71) and an intake device (72). After the process gas is heated by the preheating device (71) to reach the preheating value, it can be injected into the interior of the heating chamber (41) through the intake device (72). The second intake unit includes an adjusting device (73) and a circulating device (74). The heat-conducting gas is composed of a first mixed gas and a second mixed gas. The first mixed gas and the second mixed gas can be mixed by the adjusting device (73) to form the heat-conducting gas, and can pass through the diversion chamber (43) and enter the interior of the circulating device (74) for reuse. The temperature of the first mixed gas is higher than that of the second mixed gas. By means of the adjusting device (73), the mixing ratio of the first mixed gas and the second mixed gas can be adjusted, and the temperature of the heat-conducting gas can be adjusted.

5. The doping gas control device for wafer production according to claim 4, characterized in that: The control unit includes a central processing unit (8). The central processing unit (8) can control the preheating temperature of the preheating device (71). The central processing unit (8) can control the adjusting device (73) to adjust the mixing ratio of the first mixed gas and the second mixed gas. The central processing unit (8) can receive and process the detection values of the first temperature sensor (51), the second temperature sensor (52), the third temperature sensor (53) and the fourth temperature sensor (54). The central processing unit (8) can respectively control the working states of each of the bidirectional electric screw rod modules (63).

6. A control method for wafer production, applied to the doping gas control device for wafer production as claimed in claim 5, characterized in that: By setting the reaction temperature of the process gas through the central processing unit (8), when the temperature detected by the third temperature sensor (53) at the central area (31) of the corresponding wafer (3) reaches the reaction temperature, while the temperature detected by the fourth temperature sensor (54) at the edge area (32) of the corresponding wafer (3) does not reach the reaction temperature, the central processing unit (8) can control the corresponding bidirectional electric screw rod module (63) to reverse, and can make the two adjacent heating rods (62) in the corresponding heating assembly (61) move away from each other and can respectively contact the two heating rods (62) that move away from each other.

7. The regulation method according to claim 6, characterized in that: When the two adjacent heating rods (62) in the heating assembly (61) contact the two heating rods (62) that move away from each other, if the temperature detected by the third temperature sensor (53) at the central area (31) of the corresponding wafer (3) does not reach the reaction temperature, while the temperature detected by the fourth temperature sensor (54) at the edge area (32) of the corresponding wafer (3) reaches the reaction temperature, the central processing unit (8) can control the corresponding bidirectional electric screw rod module (63) to rotate forward, and can make the two adjacent heating rods (62) in the corresponding heating assembly (61) move closer to each other to reheat the central area (31) of the wafer (3).

8. The regulation method according to claim 7, characterized in that: When the first temperature sensor (51) detects that the temperature of the process gas entering the interior of the reaction chamber (42) is lower than the preheating temperature, the central processing unit (8) can control the adjusting device (73) to increase the proportion of the first mixed gas and decrease the proportion of the second mixed gas, and can increase the temperature of the heat-conducting gas.

9. The regulation method according to claim 8, wherein: When the first temperature sensor (51) detects that the temperature of the process gas entering the interior of the reaction chamber (42) is higher than the preheating temperature, the central processing unit (8) can control the regulating device (73) to reduce the proportion of the first mixed gas and increase the proportion of the second mixed gas, and can reduce the temperature of the heat-conducting gas.

10. The regulation method according to claim 9, wherein: By setting a temperature threshold through the central processing unit (8), when the second temperature sensor (52) detects that the temperature of the process gas inside the reaction chamber (42) is higher than the temperature threshold, the central processing unit (8) can control the preheating device (71) to reduce the preheating temperature, the central processing unit (8) can control the regulating device (73) to adjust the mixing ratio of the first mixed gas and the second mixed gas, can reduce the temperature of the heat-conducting gas, and can cool down the process gas inside the heater (41).

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