Perovskite laser and preparation method thereof
By forming a two-dimensional photonic crystal resonant cavity array and perovskite layer on the SOI substrate layer, the problems of gain region reduction and impurities generation of existing perovskite lasers are solved, and efficient and impurity-free perovskite laser preparation is achieved.
Patent Information
- Application Number
- CN202410686255.1
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-05-30
- Publication Date
- 2025-07-22
AI Technical Summary
The gain region of the existing perovskite lasers decreases, the luminescence performance becomes worse, and the use of gases such as chlorine gas directly etching is prone to produce impurities, resulting in mixed luminescence bands, and the prior art is unfavorable to the device production.
Using the SOI substrate layer and resonant cavity structure, a two-dimensional photonic crystal resonant cavity array is formed on a high refractive index material through pattern transfer and silicon etching. Combining the perovskite layer as the gain layer, a perovskite film was formed by spin coating using solution method, and annealing was performed at 50°C-100°C.
The efficient preparation of perovskite lasers is achieved, the chemical properties of perovskites are kept unchanged, the luminous performance and light mode limiting ability are improved, and the generation of impurities is avoided.
Smart Images
Figure CN120357273A_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to the field of lasers, and particularly to a perovskite laser and a preparation method thereof. Background Art
[0002] The existing perovskite lasers usually have a structural paradigm of directly etching a laser cavity on a perovskite material, which reduces the gain region of the perovskite and deteriorates the light-emitting performance. Moreover, since gases such as chlorine gas Cl2 are used in direct etching, impurity perovskites are easily generated, resulting in a mixed light-emitting band, which is not conducive to laser. There are also those that in-situ grow perovskite on an etched cavity of other materials and use perovskite as a waveguide layer. Since perovskite materials generally have a low refractive index and weak light confinement ability, it is required to use a cladding material with a sufficiently large refractive index contrast and a relatively thin perovskite thin film thickness, which is very disadvantageous for device fabrication. Summary of the Invention
[0003] The present invention provides a perovskite laser, aiming to solve at least one of the technical problems existing in the prior art.
[0004] The technical solution of the present invention is a perovskite laser, including: An SOI substrate layer, on which a resonant cavity is provided; A perovskite layer, which is arranged above the SOI substrate layer.
[0005] Further, the SOI substrate layer includes a first silicon substrate layer, a silicon dioxide substrate layer, and a second silicon substrate layer that are stacked in sequence.
[0006] Further, the thickness of the silicon dioxide substrate layer is 1 μm, and the thickness of the second silicon substrate layer is 0.4 μm to 0.8 μm.
[0007] Further, the resonant cavity is provided on the second silicon substrate layer by means of pattern transfer and silicon etching.
[0008] Further, the resonant cavity is a two-dimensional photonic crystal resonant cavity array structure.
[0009] Further, the resonant cavity is a one-dimensional distributed feedback Bragg grating.
[0010] Further, the present invention also proposes a preparation method of a perovskite laser for preparing the perovskite laser, and the method includes the following steps: S100. Based on the wet etching method, thin the second silicon substrate layer of the SOI substrate layer to a thickness of 400 nm; S200. Form an optical resonant cavity on the second silicon substrate layer of the SOI substrate layer; S300. Perform surface treatment on the SOI substrate layer. First, ultrasonically clean it with pure water and acetone for 10 - 60 minutes in sequence, then perform ultraviolet ozone treatment for 10 - 60 minutes, and finally clean it with a plasma cleaner for 1 - 10 minutes; S400. Spin - coat the perovskite solution prepared by the solution method on the SOI substrate layer. Use 0.05 - 0.5 ml of the perovskite solution and spin - coat it at a speed of 1000 - 5000 r.p.m. for 10 - 60 s. During the spin - coating process, drop 0.1 - 1 ml of toluene as an anti - solvent onto the perovskite precursor layer to form a perovskite film; S500. Anneal the prepared perovskite film at a temperature of 50°C - 100°C for 1 - 10 minutes.
[0011] Further, the step S200 includes: S210. Select a resonator structure whose optical resonance wavelength matches the peak gain wavelength of the perovskite material; S220. Transfer the corresponding resonator structure onto the photoresist by lithography or electron beam exposure method; S230. Form holes by dry etching method or wet etching method to form a photonic crystal resonator array structure.
[0012] Further, in the step S210, For a defect - free photonic crystal, the optical resonance wavelength is the wavelength corresponding to the flat band of the photonic energy band; For a defect - type photonic crystal, the optical resonance wavelength is the wavelength corresponding to the band gap of the photonic energy band.
[0013] The beneficial effects of the present invention are as follows, In this application, a perovskite laser and its preparation method are proposed. The laser is formed by using a perovskite material as a gain layer on a high - refractive - index material of a pre - prepared laser resonator, realizing a perovskite laser. The perovskite laser is easy to fabricate and does not change the chemical properties of the perovskite itself. Description of the Drawings
[0014] Figure 1 is a three - dimensional structure schematic diagram of the perovskite laser according to the present invention.
[0015] Figure 2 is a flowchart of the preparation method of the perovskite laser according to the present invention.
[0016] Figure 3 is a flowchart of forming an optical resonator on the second silicon substrate layer of the SOI substrate layer in the preparation method of the perovskite laser according to the present invention.
[0017] Figure 4It is a schematic processing flow diagram of the preparation method of the perovskite laser according to the present invention.
[0018] Figure 5 It is a schematic diagram of the structure of a two-dimensional photonic crystal resonator array for the resonator cavity in the perovskite laser according to the present invention.
[0019] In the above figures, 100 is the SOI substrate layer; 110 is the first silicon substrate layer; 120 is the silicon dioxide substrate layer; 130 is the second silicon substrate layer; 140 is the resonator cavity; 200 is the perovskite layer. Detailed implementation manners
[0020] The following will clearly and completely describe the concept, specific structure and technical effects generated by the present invention in combination with the embodiments and the drawings, so as to fully understand the purpose, scheme and effects of the present invention. It should be noted that, without conflict, the embodiments in the present application and the features in the embodiments can be combined with each other.
[0021] It should be noted that, unless otherwise specified, when a certain feature is referred to as "fixed" or "connected" to another feature, it can be directly fixed or connected to the other feature, or indirectly fixed or connected to the other feature. In addition, the up, down, left, right, top, bottom, etc. used in the present invention are only relative to the mutual positional relationship of the components of the present invention in the drawings.
[0022] In addition, unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by those skilled in the technical field of the present invention. The terms used in the description of the present invention herein are only for the purpose of describing specific embodiments, and are not intended to limit the present invention. The term "and / or" used herein includes any combination of one or more of the related listed items.
[0023] It should be understood that although the terms first, second, third, etc. may be used in the present disclosure to describe various elements, these elements should not be limited to these terms. These terms are only used to distinguish elements of the same type from each other. For example, without departing from the scope of the present disclosure, the first element may also be referred to as the second element, and similarly, the second element may also be referred to as the first element.
[0024] Refer to Figures 1 to 5 In some embodiments, a perovskite laser proposed according to the present invention, refer to Figure 1 , the perovskite laser includes: The SOI substrate layer 100, on which a resonator cavity 140 is provided; The perovskite layer 200, which is disposed above the SOI substrate layer 100.
[0025] The beneficial effects of the present invention are as follows. In this application, a perovskite laser and a preparation method thereof are proposed. The laser is realized by using a perovskite material as a gain layer and forming it on a high-refractive-index material of a prefabricated laser resonator 140. The perovskite laser is easy to prepare and does not change the chemical properties of the perovskite itself.
[0026] Specifically, the perovskite material is used as a cladding layer, and the second silicon substrate layer 130 is a high-refractive-index material (such as Si) as a waveguide layer and a photonic crystal is etched thereon. Finally, the high-refractive-index material can confine the optical mode, and at the same time, enough evanescent waves are coupled into the perovskite material, thereby realizing an effective laser structure. In this solution, the perovskite can be formed by spin coating, drop coating, in-situ growth and other methods, and there is no strict requirement for the thickness of the perovskite.
[0027] In some specific embodiments, the technical solution of the present invention is a planar slab waveguide structure. By fabricating an optical feedback resonator 140 in the waveguide layer and coupling it into the perovskite layer 200, a perovskite laser structure is realized. The laser includes a substrate material, a low-refractive-index cladding layer on the substrate, a high-refractive-index waveguide layer on the substrate (and the optical feedback resonator 140 therein), and three parts of a perovskite material formed on the high-refractive-index waveguide layer.
[0028] Furthermore, referring to Figure 1 , the SOI substrate layer 100 includes a first silicon substrate layer 110, a silicon dioxide substrate layer 120, and a second silicon substrate layer 130 stacked in sequence.
[0029] Furthermore, referring to Figure 1 , the thickness of the silicon dioxide substrate layer 120 is 1 μm (micrometer), and the thickness of the second silicon substrate layer 130 is 0.4 μm (micrometer) to 0.8 μm (micrometer).
[0030] Furthermore, referring to Figure 1 , the resonator 140 is disposed on the second silicon substrate layer 130 by means of pattern transfer and silicon etching.
[0031] Specifically, the pattern transfer and silicon etching are in a sequential relationship.
[0032] Furthermore, referring to Figure 1 and Figure 5 , the resonator 140 is a two-dimensional photonic crystal resonator array structure.
[0033] Two-dimensional photonic crystals are optical materials with a periodic structure, which have a modulation of periodically different dielectric constant materials in two directions. Generally, they are composed of a high refractive index material (such as silicon) and a low refractive index material (such as air), and the two materials are arranged in a periodic pattern.
[0034] Further, referring to Figure 1 and Figure 5 , the resonant cavity (140) is a one-dimensional distributed feedback Bragg grating.
[0035] The difference between a one-dimensional distributed feedback Bragg grating and an array structure of two-dimensional photonic crystal resonant cavities is that it has a modulation of periodically different dielectric constant materials only in one direction.
[0036] Specifically, the resonant cavity 140 is an array structure of two-dimensional photonic crystals or one-dimensional distributed feedback Bragg grating resonant cavities. Referring to Figure 5 , it shows the photonic crystal design of a square lattice with circular holes. In fact, designs including but not limited to square lattice / triangular lattice, circular holes / triangular holes / double holes, etc. can be used.
[0037] Referring to Figure 5 , in this embodiment, the resonant cavity is a two-dimensional square lattice circular hole photonic crystal, which is characterized in that two materials with different dielectric constants are periodically arranged. The period size mainly determines the flat band position of its photonic band, and the hole size mainly determines its one-dimensional and two-dimensional resonance capabilities, which can be designed according to needs.
[0038] Further, referring to Figure 2 , the present invention also proposes a method for preparing a perovskite laser for preparing the perovskite laser, and the method includes the following steps: S100. Based on the wet etching method, the second silicon substrate layer 130 of the SOI substrate layer 100 is thinned to a thickness of 400 nm (nanometers); S200. An optical resonant cavity 140 is formed on the second silicon substrate layer 130 of the SOI substrate layer 100; S300. Surface treatment is carried out on the SOI substrate layer 100. It is ultrasonically cleaned with pure water and acetone for 10 - 60 minutes in sequence, then subjected to ultraviolet ozone treatment for 10 - 60 minutes, and finally cleaned with a plasma cleaner for 1 - 10 minutes; S400. The perovskite solution prepared by the solution method is spin-coated on the SOI substrate layer 100. 0.05 - 0.5 ml (milliliters) of the perovskite solution is used, and it is spin-coated at a rotation speed of 1000 - 5000 r.p.m (revolutions per minute) for 10 - 60 s (seconds). During the spin coating, 0.1 - 1 ml (milliliters) of toluene is dropped onto the perovskite precursor layer as an antisolvent to form a perovskite film; S500. Anneal the prepared perovskite film at a temperature of 50°C - 100°C for 1 - 10 minutes.
[0039] Specifically, referring to Figure 4 , use an SOI substrate with a structure of 1 μm (micrometer) of epitaxial SiO2 on a Si substrate, and then 0.8 μm (micrometer) of epitaxial Si on it (i.e., Figure 4 the first sheet), and then perform wet etching on the Si to a thickness of 400 nm (nanometer) (i.e., Figure 4 the second sheet), next form an optical resonator 140 such as a photonic crystal resonator 140 array structure on the Si (i.e., Figure 4 the third sheet), specifically including pattern transfer and silicon etching, and finally spin - coat a layer of perovskite on the structure already having the resonator 140 (i.e., Figure 4 the fourth sheet).
[0040] Furthermore, referring to Figure 3 , the step S200 includes: S210. Select a resonator 140 structure whose optical resonance wavelength matches the peak gain wavelength of the perovskite material; S220. Transfer the corresponding resonator 140 structure onto the photoresist by photolithography or electron beam exposure method; S230. Form holes by dry etching method or wet etching method to form a photonic crystal resonator 140 array structure.
[0041] Furthermore, in the step S210, For a defect - free photonic crystal, the optical resonance wavelength is the wavelength corresponding to the flat band of the photonic energy band; For a defective photonic crystal, the optical resonance wavelength is the wavelength corresponding to the band gap of the photonic energy band.
[0042] As described above, it is only the preferred embodiment of the present invention. The present invention is not limited to the above - mentioned embodiments. As long as it achieves the technical effects of the present invention by the same means, any modifications, equivalent replacements, improvements, etc., made within the spirit and principle of the present disclosure shall be included within the scope of protection of the present disclosure. It shall fall within the scope of protection of the present invention. Within the scope of protection of the present invention, its technical solutions and / or implementation manners can have various different modifications and changes.
Claims
1. A perovskite laser, characterized in that, Comprising: An SOI substrate layer (100) with a resonant cavity (140) disposed thereon; A perovskite layer (200) disposed above the SOI substrate layer (100).
2. The perovskite laser according to claim 1, characterized in that The SOI substrate layer (100) comprises a first silicon substrate layer (110), a silicon dioxide substrate layer (120), and a second silicon substrate layer (130) stacked in sequence.
3. The perovskite laser according to claim 2, characterized in that The thickness of the silicon dioxide substrate layer (120) is 1 μm, and the thickness of the second silicon substrate layer (130) is 0.4 μm to 0.8 μm.
4. The perovskite laser according to claim 2, characterized in that The resonant cavity (140) is disposed on the second silicon substrate layer (130) by means of pattern transfer and silicon etching.
5. The perovskite laser according to claim 1, characterized in that The resonant cavity (140) is a two-dimensional photonic crystal resonant cavity array structure.
6. The perovskite laser according to claim 1, characterized in that The resonant cavity (140) is a one-dimensional distributed feedback Bragg grating.
7. A method for preparing a perovskite laser, which is used to prepare the perovskite laser according to any one of claims 1 to 6, characterized in that, The method comprises the following steps: S100: Based on the wet etching method, thinning the second silicon substrate layer (130) of the SOI substrate layer (100) to a thickness of 400 nm; S200: Forming an optical resonant cavity (140) on the second silicon substrate layer (130) of the SOI substrate layer (100); S300: Performing surface treatment on the SOI substrate layer (100), ultrasonically cleaning with pure water and acetone for 10 - 60 minutes in sequence, then performing ultraviolet ozone treatment for 10 - 60 minutes, and finally cleaning with a plasma cleaner for 1 - 10 minutes; S400: Spin-coating a perovskite solution prepared by the solution method on the SOI substrate layer (100), using 0.05 - 0.5 ml of the perovskite solution, spin-coating at a speed of 1000 - 5000 r.p.m for 10 - 60 s. During spin-coating, 0.1 - 1 ml of toluene is dropped onto the perovskite precursor layer as an anti-solvent to form a perovskite film; S500: Annealing the prepared perovskite film at a temperature of 50°C - 100°C for 1 - 10 minutes.
8. The method for preparing a perovskite laser according to claim 7, wherein The step S200 includes: S210: Selecting a resonant cavity (140) structure with an optical resonant wavelength matching the peak gain wavelength of the perovskite material; S220: Transferring the corresponding resonant cavity (140) structure onto the photoresist by means of photolithography or electron beam exposure; S230: Forming holes by means of dry etching or wet etching to constitute a photonic crystal resonant cavity (140) array structure.
9. The method for preparing a perovskite laser according to claim 8, wherein In the step S210, For a defect-free photonic crystal, the optical resonant wavelength is the wavelength corresponding to the flat band of the photonic energy band; For a defective photonic crystal, the optical resonant wavelength is the wavelength corresponding to the band gap of the photonic energy band.