Gallium nitride power device driving circuit design

Abstract

The invention relates to a gallium nitride power device driving circuit design which comprises an input driving signal input end, one end of the driving signal input end is connected with a resistor R7, a driving signal enters the resistor R7 through the driving signal input end, one end of the resistor R7 is connected with a transistor Q4 and a transistor Q5, and the other end of the resistor Q5 is connected with a transistor Q6. One ends, far away from the resistor R7, of the transistor Q4 and the transistor Q5 are connected with a capacitor C4 and a diode D16; one end of the transistor Q5 is connected with a resistor R10; one end of the resistor R10 and one end of the resistor C4 are connected with a transformer T2; and two ends of the transformer T2 are respectively connected with a transistor Q8 and a diode D20. The problems that an existing driving circuit cannot shield interference, and a gallium nitride power device is prone to damage are mainly solved. The drive circuit of the gallium nitride power device is optimally designed, and the optimized drive circuit can shield signal interference without causing the problem that the gallium nitride power device is damaged.

Description

Technical Field

[0001] The present invention relates to the technical field of power supplies, and particularly to a design of a driving circuit for a gallium nitride power device. Background Art

[0002] Existing power supply products have problems of large volume and low efficiency. Using gallium nitride chips can reduce the volume of the power supply and improve the power supply working efficiency. When replacing general power supply products with gallium nitride power devices, the volume can be reduced by about 30%, and the power supply working efficiency can be improved by about 2%.

[0003] There are two driving schemes for gallium nitride power devices, namely direct driving and negative voltage driving, and both driving schemes are used in practical applications.

[0004] The direct driving scheme is that the driving signal comes out from the pin of the power supply chip and is directly connected to the gallium nitride power chip. The problem with this scheme is that the driving capabilities of many power supply chips are weak and cannot fully operate the gallium nitride chip. When the gallium nitride power device cannot fully operate, the device will have a phenomenon of overheating or being damaged. At the same time, direct chip driving will transmit the interference of the chip itself to the gallium nitride power device at the same time, and the interference signal will cause the gallium nitride power device to mis-switch, ultimately causing damage to the gallium nitride chip.

[0005] The negative voltage driving scheme is to construct a negative voltage circuit outside the pin of the power supply chip. It is expected to use about 15 components. The problem with using this scheme is that the construction of the negative voltage circuit is complex. It is expected to use 15 electronic components, which reduces the product reliability. If one of the 15 devices has an abnormal negative voltage output, there will be a change, and the gallium nitride power device cannot be normally turned on. At the same time, the negative voltage circuit cannot filter the interference brought by itself or the external circuit, and the interference signal will cause the gallium nitride power device to mis-switch, ultimately causing damage to the gallium nitride chip.

[0006] How to simply construct a driving circuit for a gallium nitride power device and at the same time shield the interference so that the signal interference does not affect the normal operation of the gallium nitride power device is the difficulty in the design of the driving circuit. Therefore, there is an urgent need to design a driving circuit for a gallium nitride power device to solve the above problems. Summary of the Invention

[0007] The purpose of the present invention is to provide a design of a driving circuit for a gallium nitride power device to solve the above deficiencies in the prior art.

[0008] To achieve the above purpose, the present invention provides the following technical solutions: A design of a gallium nitride power device drive circuit includes an input drive signal input terminal. One end of the drive signal input terminal is connected to a resistor R7. The drive signal enters the resistor R7 through the drive signal input terminal. One end of the resistor R7 is respectively connected to a transistor Q4 and a transistor Q5. The ends of the transistor Q4 and the transistor Q5 far from the resistor R7 are connected to a capacitor C4 and a diode D16. One end of the transistor Q5 is connected to a resistor R10; One end of the resistor R10 and C4 is connected to a transformer T2; Both ends of the transformer T2 are respectively connected to a transistor Q8 and a diode D20.

[0009] Preferably, the capacitor C4 and the diode D16 are connected in parallel.

[0010] Preferably, a resistor R12, a capacitor C9 and a diode D19 are arranged between the transformer T2 and the transistor Q8.

[0011] Preferably, the resistor R12 and the capacitor C9 are connected in parallel, and the resistor R12 and the diode D19 are connected in series.

[0012] Preferably, after the signal from the drive signal input terminal passes through the transistor Q4 and the transistor Q5, it first passes through the transformer T2 and then through the transistor Q8. By using the primary and secondary coils of the transformer T2 for isolation, the interference of the external circuit is shielded; through the mutual inductance effect of the primary and secondary windings of the transformer T2, the interference signal is suppressed, and the interference signal mixed in the drive signal is reduced to interfere with the gallium nitride chip.

[0013] Preferably, one end of the intersection of the transistor Q5 and the resistor R10 is connected to the ground wire.

[0014] Preferably, one end of the transistor Q4 is connected to an R9, and one end of the R9 is connected to the supply voltage VCC of the corresponding analog signal source.

[0015] Preferably, a resistor R11 is connected to the pin of the transistor Q8, and the diode D20 is connected to another pin of the transistor Q8.

[0016] Preferably, a diode Z1, an inductor L3, an inductor L6, a transistor Q6, a resistor R13 and a capacitor C8 are arranged at the end of the resistor R11 far from the transistor Q8.

[0017] Preferably, a diode D17, a diode Z2, a diode D18 and a rectifier are arranged at the end of the diode D20 far from the transistor Q8.

[0018] In the above technical solution, for a design of a gallium nitride power device drive circuit provided by the present invention, the beneficial effects are: The signal is transmitted to the T2 transformer. The primary and secondary coils of the transformer are used for isolation to shield the interference from the external circuit.

[0019] The drive signal flows in from C4. If directly connected to the gallium nitride chip, the drive signal is mixed with interference signals. Affected by the interference signals, the gallium nitride chip is prone to mis-switching and damage to the gallium nitride device. Using the transformer, the signal first flows into the transformer from the C4 terminal. Through the mutual inductance of the primary and secondary windings of the transformer, the interference signal is suppressed, reducing the interference of the interference signal mixed in the drive signal on the gallium nitride chip. Description of the Drawings

[0020] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the prior art, the following will briefly introduce the drawings required in the embodiments. Obviously, the drawings in the following description are only some embodiments recorded in the present invention. For those of ordinary skill in the art, other drawings can also be obtained according to these drawings.

[0021] Figure 1 It is a schematic structural diagram provided by an embodiment of the drive circuit design of a gallium nitride power device of the present invention. Detailed Embodiments

[0022] To further elaborate on the technical means and effects adopted by the present invention to achieve the predetermined invention purpose, the following will, in conjunction with the accompanying drawings and preferred embodiments, detail the specific embodiments, structures, features and effects according to the present invention as follows.

[0023] As Figure 1 shown, a drive circuit design of a gallium nitride power device provided by an embodiment of the present invention includes an input drive signal input terminal. One end of the drive signal input terminal is connected to a resistor R7. The drive signal enters the resistor R7 through the drive signal input terminal. One end of the resistor R7 is respectively connected to a transistor Q4 and a transistor Q5. The ends of the transistor Q4 and the transistor Q5 far from the resistor R7 are connected to a capacitor C4 and a diode D16. One end of the transistor Q5 is connected to a resistor R10; one end of the resistor R10 and C4 is connected to a transformer T2; both ends of the transformer T2 are respectively connected to a transistor Q8 and a diode D20.

[0024] The interference suppression and isolation circuit of the gallium nitride drive circuit: The signal is transmitted to the T2 transformer. The primary and secondary coils of the transformer are used for isolation to shield the interference from the external circuit.

[0025] The drive signal flows in from C4. If directly connected to the gallium nitride chip, the drive signal is mixed with interference signals. Affected by the interference signals, the gallium nitride chip is prone to mis-switching and damage to the gallium nitride device. The transformer signal first flows into the transformer from the C4 terminal. Through the mutual inductance effect of the primary and secondary windings of the transformer, the interference signal is suppressed, reducing the interference of the interference signal mixed in the drive signal to the gallium nitride chip.

[0026] Specifically, in this embodiment, it includes an input drive signal input terminal. One end of the drive signal input terminal is connected to a resistor R7. The drive signal enters the resistor R7 through the drive signal input terminal. One end of the resistor R7 is respectively connected to a transistor Q4 and a transistor Q5. The ends of the transistor Q4 and the transistor Q5 far from the resistor R7 are connected to a capacitor C4 and a diode D16. One end of the transistor Q5 is connected to a resistor R10; One end of the resistor R10 and C4 is connected to a transformer T2; Both ends of the transformer T2 are respectively connected to a transistor Q8 and a diode D20.

[0027] In the embodiment provided by the present invention, the capacitor C4 and the diode D16 are connected in parallel.

[0028] In an embodiment provided by the present invention, a resistor R12, a capacitor C9 and a diode D19 are arranged between the transformer T2 and the transistor Q8.

[0029] In another embodiment provided by the present invention, the resistor R12 and the capacitor C9 are connected in parallel, and the resistor R12 and the diode D19 are connected in series.

[0030] In yet another embodiment provided by the present invention, after the signal from the drive signal input terminal passes through the transistor Q4 and the transistor Q5, it first passes through the transformer T2 and then through the transistor Q8. Using the primary and secondary coils of the transformer T2 for isolation, the interference of the external circuit is shielded; through the mutual inductance effect of the primary and secondary windings of the transformer T2, the interference signal is suppressed, reducing the interference of the interference signal mixed in the drive signal to the gallium nitride chip.

[0031] In an embodiment provided by the present invention, one end of the intersection of the transistor Q5 and the resistor R10 is connected to the ground wire.

[0032] In the embodiment provided by the present invention, one end of the transistor Q4 is connected to an R9, and one end of the R9 is connected to the supply voltage VCC of the corresponding analog signal source.

[0033] In another embodiment provided by the present invention, a resistor R11 is connected to the pin of the transistor Q8, and the diode D20 is connected to another pin of the transistor Q8.

[0034] As another embodiment provided by the present invention, a diode Z1, an inductor L3, an inductor L6, a transistor Q6, a resistor R13, and a capacitor C8 are provided at one end of the resistor R11 away from the transistor Q8.

[0035] As an embodiment provided by the present invention, a diode D17, a diode Z2, a diode D18, and a rectifier are provided at one end of the diode D20 away from the transistor Q8.

[0036] The present invention proposes a design of a gallium nitride power device drive circuit, mainly solving the problems that the existing drive circuit cannot shield interference and the gallium nitride power device is easily damaged.

[0037] The present invention has been used in actual power supply projects, such as the charger project of the Lifan electric two-wheeler. The tests have been completed, and the test results are as shown in the following table. The circuit function is normal. The power supply efficiency has been increased from 92% to 95%, the power supply temperature has been reduced from 75 degrees to 65 degrees, and the product volume has been reduced by more than 30%. 。

[0038] Through the implementation of the present invention in the Lifan electric vehicle charger project, the feasibility of the present invention is proved, and the purpose of the present invention is achieved.

[0039] The above are only the preferred embodiments of the present invention, and do not impose any form of limitation on the present invention. Although the present invention has been disclosed above with the preferred embodiments, it is not intended to limit the present invention. Any person skilled in the art can make some changes or modifications within the scope of the technical solution of the present invention to make equivalent embodiments with equivalent changes. However, as long as it does not depart from the content of the technical solution of the present invention, any brief modifications, equivalent changes, and modifications made to the above embodiments based on the technical essence of the present invention still fall within the scope of the technical solution of the present invention.

Claims

1. A design of a gallium nitride power device drive circuit, including an input drive signal input terminal, characterized in that, One end of the driving signal input terminal is connected to a resistor R7. The driving signal enters the resistor R7 through the driving signal input terminal. One end of the resistor R7 is respectively connected to a transistor Q4 and a transistor Q5. The ends of the transistor Q4 and the transistor Q5 far from the resistor R7 are connected to a capacitor C4 and a diode D16. One end of the transistor Q5 is connected to a resistor R10; One end of the resistor R10 and C4 is connected to a transformer T2; Both ends of the transformer T2 are respectively connected to a transistor Q8 and a diode D20.

2. The design of a gallium nitride power device drive circuit according to claim 1, characterized in that The capacitor C4 and the diode D16 are connected in parallel.

3. The design of a gallium nitride power device drive circuit according to claim 1, characterized in that, A resistor R12, a capacitor C9 and a diode D19 are arranged between the transformer T2 and the transistor Q8.

4. The design of a gallium nitride power device drive circuit according to claim 3, characterized in that, The resistor R12 and the capacitor C9 are connected in parallel, and the resistor R12 and the diode D19 are connected in series.

5. A design of a gallium nitride power device drive circuit according to claim 1, characterized in that, After the signal through the driving signal input terminal passes through the transistor Q4 and the transistor Q5, it first passes through the transformer T2 and then passes through the transistor Q8. By using the primary and secondary coils of the transformer T2 for isolation, the interference of the external circuit is shielded; through the mutual inductance effect of the primary and secondary windings of the transformer T2, the interference signal is suppressed, and the interference signal mixed in the driving signal is reduced to interfere with the gallium nitride chip.

6. The design of a gallium nitride power device drive circuit according to claim 1, characterized in that, One end of the intersection of the transistor Q5 and the resistor R10 is connected to the ground wire.

7. A design of a gallium nitride power device drive circuit according to claim 1, characterized in that, One end of the transistor Q4 is connected to an R9, and one end of the R9 is connected to the supply voltage VCC of the corresponding analog signal source.

8. A gallium nitride power device drive circuit design according to claim 1, characterized in that, A resistor R11 is connected to the pin of the transistor Q8, and the diode D20 is connected to another pin of the transistor Q8.

9. The design of a driving circuit for a gallium nitride power device according to claim 8, characterized in that A diode Z1, an inductor L3, an inductor L6, a transistor Q6, a resistor R13 and a capacitor C8 are arranged at the end of the resistor R11 far from the transistor Q8.

10. The design of a gallium nitride power device drive circuit according to claim 8, characterized in that, A diode D17, a diode Z2, a diode D18 and a rectifier are arranged at the end of the diode D20 far from the transistor Q8.

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