Treatment method of diamond-like carbon film

Abstract

The diamond-like carbon film processing method according to the present invention comprises: forming a diamond-like carbon film on a substrate; and carrying out oxidation treatment on the surface of the diamond-like carbon film, wherein the oxidation treatment comprises at least one of electrochemical oxidation treatment, thermal oxidation treatment and plasma oxidation treatment. The method is simple, efficient and low in cost, the conductivity can be effectively improved, meanwhile, the excellent mechanical performance is kept, and therefore the application adaptability is improved.

Description

Technical Field

[0001] The present invention relates to the field of processing, and particularly to a method for treating diamond-like carbon films. Background Art

[0002] Diamond-Like Carbon (DLC) films are carbon-based thin films with excellent mechanical properties, chemical inertness, and corrosion resistance, etc., and are widely used in the fields of electronics and optics. However, due to the poor conductivity of DLC films, their application scope is limited.

[0003] Therefore, it is necessary to provide an improved method for treating diamond-like carbon films to overcome the above defects. Summary of the Invention

[0004] The purpose of the present invention is to provide an improved method for treating diamond-like carbon films, which is simple, efficient, and low-cost, can effectively improve its conductivity, and at the same time maintain excellent mechanical properties, thereby improving the application adaptability.

[0005] To achieve the above purpose, the method for treating diamond-like carbon films of the present invention includes the following steps:

[0006] Form a diamond-like carbon film on a substrate; and

[0007] Perform an oxidation treatment on the surface of the diamond-like carbon film, and the oxidation treatment includes at least one of electrochemical oxidation treatment, thermal oxidation treatment, and plasma oxidation treatment.

[0008] Compared with the prior art, in the method of the present invention, first a diamond-like carbon film is formed on a substrate, and then the diamond-like carbon film is subjected to an oxidation treatment, such as electrochemical oxidation treatment, thermal oxidation treatment, or plasma oxidation treatment. The purpose of the oxidation treatment is to convert some carbon atoms in the diamond-like carbon film into oxygen-containing functional groups, thereby improving the conductivity of the diamond-like carbon film. This method is simple, efficient, and low-cost, effectively improves the conductivity while maintaining excellent mechanical properties, thereby improving the application adaptability.

[0009] As an embodiment, the diamond-like carbon film is formed by chemical vapor deposition.

[0010] As an embodiment, in the chemical vapor deposition, argon gas and CH4 gas are introduced into a vacuum chamber, and the pressure of the vacuum chamber is controlled to be 4.5×10 -1 Pa to 5.0×10 -1 Pa.

[0011] As an embodiment, depositing the metal nanoparticle layer includes: controlling the ion source power to be 2.5 - 3.0 kW and the workpiece negative pressure to be 180 - 220 V.

[0012] As an example, the deposition time of the diamond-like carbon film is 20 - 30 minutes.

[0013] As an example, the temperature of the etching solution is 30 - 45 °C, and the etching time is 5 - 30 minutes.

[0014] As an example, the electrochemical oxidation treatment includes: using the diamond-like carbon film as the working electrode, using sulfuric acid as the electrolyte, and applying a voltage of 0.5 - 1.5 V.

[0015] As an example, the thermal oxidation treatment includes: placing the diamond-like carbon film in oxygen at 500 - 1000 °C.

[0016] As an example, the plasma oxidation treatment includes: placing the diamond-like carbon film in a plasma under a vacuum or protective gas environment and applying an electric field of 2 - 3 V.

[0017] As an example, after the oxidation treatment, it further includes performing a conductivity test on the diamond-like carbon film. Detailed implementation manners

[0018] To make the above objects, features, and advantages of the present application more obvious and understandable, the following describes the detailed implementation manners of the present application with some examples. Many specific details are set forth in the following description to fully understand the present application. However, the present application can be implemented in many other ways different from those described herein. Those skilled in the art can make similar improvements without departing from the connotation of the present application. Therefore, the present application is not limited by the specific examples disclosed below.

[0019] In the description of the present application, the terms "first" and "second" are only used for descriptive purposes and cannot be understood as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features. Thus, the features defined with "first" and "second" may explicitly or implicitly include at least one of such features. In the description of the present application, the meaning of "a plurality" is at least two, such as two, three, etc., unless otherwise specifically and clearly defined.

[0020] In this application, unless otherwise clearly defined and limited, the first feature being "on" or "under" the second feature may be that the first and second features are in direct contact, or the first and second features are in indirect contact through an intermediate medium. Moreover, the first feature being "above", "over" and "on top of" the second feature may be that the first feature is directly above or obliquely above the second feature, or merely indicates that the horizontal height of the first feature is higher than that of the second feature. The first feature being "under", "beneath" and "underneath" the second feature may be that the first feature is directly below or obliquely below the second feature, or merely indicates that the horizontal height of the first feature is less than that of the second feature.

[0021] It should be noted that when an element is referred to as "fixed to" or "disposed on" another element, it can be directly on the other element or there may also be an intermediate element. When an element is considered to be "connected to" another element, it can be directly connected to the other element or there may be an intermediate element at the same time. The terms "vertical", "horizontal", "upper", "lower", "left", "right" and similar expressions used herein are only for the purpose of illustration and do not represent the only implementation.

[0022] The following further illustrates the method for treating diamond-like carbon films of the present invention in conjunction with embodiments, but does not limit the present invention thereby. The method of the present invention aims to provide a method for treating diamond-like carbon films, which is simple, efficient, low-cost, can effectively improve its conductivity, and at the same time maintain excellent mechanical properties, thereby improving the application adaptability.

[0023] In an embodiment of the method for treating diamond-like carbon films of the present invention, the following steps are included:

[0024] Form a diamond-like carbon film on a substrate; and

[0025] Perform an oxidation treatment on the surface of the diamond-like carbon film, and the oxidation treatment includes at least one of electrochemical oxidation treatment, thermal oxidation treatment and plasma oxidation treatment.

[0026] In the method of the present invention, first a diamond-like carbon film is formed on a substrate, and then the diamond-like carbon film is subjected to an oxidation treatment, such as electrochemical oxidation treatment, thermal oxidation treatment or plasma oxidation treatment. The purpose of the oxidation treatment is to convert some carbon atoms in the diamond-like carbon film into oxygen-containing functional groups, thereby improving the conductivity of the diamond-like carbon film. This method is simple, efficient, low-cost, effectively improves the conductivity while maintaining excellent mechanical properties, thereby improving the application adaptability.

[0027] Specifically, in a particular embodiment, first, a diamond-like carbon film is formed on a substrate, and the diamond-like carbon layer can be formed by chemical vapor deposition or physical vapor deposition. Specifically, in chemical vapor deposition, argon and CH4 gases are introduced into a vacuum chamber, and the air pressure in the vacuum chamber is controlled to be 4.5×10 -1 Pa to 5.0×10 -1 Pa, the ion source power is controlled to be 2.5 - 3.0 kW, and the workpiece negative pressure is 180 - 220 V. Deposition is carried out under these conditions for 20 - 30 minutes to form a smooth and flat diamond-like carbon film.

[0028] Next, the surface of the diamond-like carbon film is oxidized to convert some carbon atoms into oxygen-containing functional groups, thereby improving the conductivity of the diamond-like carbon film. Optionally, the oxidation treatment may include at least one of electrochemical oxidation treatment, thermal oxidation treatment, and plasma oxidation treatment.

[0029] In the electrochemical oxidation treatment, the diamond-like carbon film is used as the working electrode, sulfuric acid is used as the electrolyte, and a voltage of 0.5 - 1.5 V is applied. After a predetermined time, the diamond-like carbon film is oxidized.

[0030] In the thermal oxidation treatment, high-temperature oxygen is used for oxidation. For example, the diamond-like carbon film is placed in oxygen at 500 - 1000 °C for oxidation treatment.

[0031] In the plasma oxidation treatment, preferably in a vacuum or protective gas environment, the diamond-like carbon film is placed in a plasma, and an electric field of 2 - 3 V is applied for oxidation treatment. Specifically, first, the diamond-like carbon film is pretreated: first, ensure that its surface is clean and remove impurities that may affect the oxidation treatment. Then, the diamond-like carbon film is placed in the plasma, for example, in a vacuum chamber with a vacuum degree of 1.5×10 -1 Pa. Then, an electric field is applied: an electric field of 2 V - 3 V is applied in the plasma to generate high-energy ions required for plasma oxidation. These high-energy ions collide with the surface of the diamond-like carbon film, causing rearrangement and chemical changes of surface atoms to form oxygen-containing functional groups, thereby achieving the oxidation treatment.

[0032] Specifically, after the oxidation treatment, the conductivity of the diamond-like carbon film is tested. For example, test methods such as the four-probe method and a resistance tester can be used. The test shows that the conductivity of the diamond-like carbon film after oxidation treatment is significantly improved compared with that before treatment.

[0033] In summary, in the method of the present invention, first, a diamond-like carbon film is formed on a substrate, and then the diamond-like carbon film is subjected to an oxidation treatment, such as electrochemical oxidation treatment, thermal oxidation treatment or plasma oxidation treatment. The purpose of the oxidation treatment is to convert some carbon atoms in the diamond-like carbon film into oxygen-containing functional groups, thereby improving the electrical conductivity of the diamond-like carbon film. This method is simple, efficient and low-cost, effectively improving the electrical conductivity while maintaining excellent mechanical properties, thus improving the application adaptability.

[0034] The above-disclosed are only the preferred embodiments of the present invention. Of course, the scope of the rights of the present invention cannot be limited thereby. Therefore, equivalent changes made according to the scope of the patent application of the present invention still fall within the scope covered by the present invention.

Claims

1. A method for treating diamond-like carbon film, characterized in that, Including the following steps: Forming a diamond-like carbon film on a substrate; and Performing an oxidation treatment on the surface of the diamond-like carbon film, where the oxidation treatment includes at least one of electrochemical oxidation treatment, thermal oxidation treatment, and plasma oxidation treatment.

2. The method for treating the diamond-like carbon film according to claim 1, characterized in that, The diamond-like carbon film is formed by chemical vapor deposition.

3. The method for treating a diamond-like carbon film according to claim 2, characterized in that, In the chemical vapor deposition, argon gas and CH4 gas are introduced into the vacuum chamber, and the air pressure of the vacuum chamber is controlled to be 4.5×10 -1 Pa to 5.0×10 -1 Pa.

4. The method for treating the diamond-like carbon film according to claim 3, wherein, Controlling the ion source power to be 2.5 - 3.0 kW and the workpiece negative pressure to be 180 - 220 V.

5. The method for treating a diamond-like carbon film according to claim 3, characterized in that, The deposition time of the diamond-like carbon film is 20 - 30 minutes.

6. The method for treating a diamond-like carbon film according to claim 5, wherein The temperature of the etching solution is 30 - 45 °C, and the etching time is 5 - 30 minutes.

7. The method for treating the diamond-like carbon film according to claim 1, characterized in that, The electrochemical oxidation treatment includes: using the diamond-like carbon film as a working electrode, using sulfuric acid as an electrolyte, and applying a voltage of 0.5 - 1.5 V.

8. The method for treating a diamond-like carbon film according to claim 1, wherein, The thermal oxidation treatment includes: placing the diamond-like carbon film in oxygen at 500 - 1000 °C.

9. The method for treating a diamond-like carbon film according to claim 1, characterized in that, The plasma oxidation treatment includes: placing the diamond-like carbon film in a plasma under a vacuum or protective gas environment and applying an electric field of 2 - 3 V.

10. The method for treating a diamond-like carbon film according to claim 1, characterized in that, After the oxidation treatment, it further includes performing a conductivity test on the diamond-like carbon film.