Method for forming diamond-like carbon film

By introducing a fluorine-containing gas and isopropanol or n-propanol on the glass substrate, a fluorinated diamond-like carbon film without hydrogen is formed, which solves the problem that hydrogen content affects the stability of the material in the prior art and achieves improvement of the stability of the material.

CN120366729APending Publication Date: 2025-07-25SAE TECH DELEVOPMENT DONGGUAN
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Patent Information

Application Number
CN202410098865.X
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2024-01-24
Publication Date
2025-07-25

AI Technical Summary

Technical Problem

Existing diamond-like carbon films contain hydrogen atoms, causing the material to expand and contract, affecting its performance.

Method used

Fluorinated gas, isopropanol or n-propanol are introduced on the glass substrate by chemical vapor deposition to form a fluorinated diamond-like carbon film without hydrogen.

Benefits of technology

The formation of a fluorinated diamond-like carbon film without hydrogen improves the stability of the material and meets different application needs.

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Abstract

The forming method of the diamond-like carbon film comprises the following steps: providing a glass substrate; and depositing on the glass substrate to form a fluorinated diamond-like carbon film which does not contain hydrogen, in the deposition, fluorine-containing gas and isopropyl alcohol or normal propyl alcohol are introduced into the reaction chamber for chemical vapor deposition. The method is simple and easy to implement, and the fluorinated diamond-like carbon film free of hydrogen can be formed, so that different application ranges are met.
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Description

Technical Field

[0001] The present invention relates to the field of processing, and more particularly to a method for forming a diamond-like carbon film. Background Art

[0002] Diamond-Like Carbon (DLC) film is an amorphous carbon material, which has spectral characteristics similar to graphite and also has many other properties, such as excellent friction performance, chemical inertness, wear resistance and corrosion resistance. Therefore, DLC films are widely used in many fields, such as electronics, optics, biomedicine, automotive and aerospace. However, current DLC materials all contain a certain amount of hydrogen atoms, and these materials are easily affected by their hydrogen content, often showing large expansion and contraction.

[0003] Therefore, it is necessary to provide an improved method for forming a diamond-like carbon film to provide a hydrogen-free diamond-like carbon film to overcome the above defects. Summary of the Invention

[0004] The purpose of the present invention is to provide an improved method for forming a diamond-like carbon film, which is simple and easy to implement, and can form a hydrogen-free fluorinated diamond-like carbon film to meet different application ranges.

[0005] To achieve the above purpose, the method for forming a diamond-like carbon film of the present invention includes the following steps:

[0006] Providing a glass substrate; and

[0007] Depositing a hydrogen-free fluorinated diamond-like carbon film on the glass substrate;

[0008] In the deposition, a fluorine-containing gas and isopropyl alcohol or n-propyl alcohol are introduced into the reaction chamber for chemical vapor deposition.

[0009] Compared with the prior art, in the method of the present invention, first a diamond-like carbon film is formed on the glass substrate, and then a hydrogen-free fluorinated diamond-like carbon film is formed by introducing a fluorine-containing gas and isopropyl alcohol or n-propyl alcohol into the reaction chamber for chemical vapor deposition. Specifically, the introduction of the fluorine-containing gas can deposit a fluoride-containing diamond-like carbon, and the introduced isopropyl alcohol or n-propyl alcohol can remove the hydrogen atoms in the diamond-like carbon, thereby forming a hydrogen-free fluorinated diamond-like carbon film. This method is simple and easy to implement, can meet the needs of different application fields, and has broad application prospects.

[0010] As an embodiment, the chemical vapor deposition is plasma-enhanced chemical vapor deposition.

[0011] As an embodiment, the fluorine-containing gas is at least one of SF6 and C2F4.

[0012] As an embodiment, before introducing the isopropanol or n-propanol, the air pressure in the reaction chamber is controlled to be 3.0×10 -3 Pa to 3.5×10 -3 Pa, and the temperature of the reaction chamber is controlled to be 150 - 200 °C.

[0013] As an embodiment, after introducing the isopropanol or n-propanol, the air pressure in the reaction chamber is kept unchanged, and the temperature of the reaction chamber is controlled to be 25 - 80 °C.

[0014] As an embodiment, the introduction of the isopropanol or n-propanol is later than the introduction of the fluorine-containing gas. Detailed implementation manners

[0015] To make the above objects, features, and advantages of the present application more obvious and understandable, the following describes the detailed implementation manners of the present application in combination with some embodiments. Many specific details are set forth in the following description to fully understand the present application. However, the present application can be implemented in many other ways different from those described herein, and those skilled in the art can make similar improvements without departing from the connotation of the present application. Therefore, the present application is not limited by the specific embodiments disclosed below.

[0016] In the description of the present application, the terms "first" and "second" are only used for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features. Thus, the features defined with "first" and "second" may explicitly or implicitly include at least one of these features. In the description of the present application, "a plurality of" means at least two, such as two, three, etc., unless otherwise specifically and clearly defined.

[0017] In the present application, unless otherwise clearly specified and limited, the first feature being "on" or "under" the second feature may be that the first and second features are in direct contact, or the first and second features are indirectly in contact through an intermediate medium. Moreover, the first feature being "above", "over" and "on" the second feature may be that the first feature is directly above or obliquely above the second feature, or merely indicates that the first feature has a higher horizontal height than the second feature. The first feature being "under", "beneath" and "under" the second feature may be that the first feature is directly below or obliquely below the second feature, or merely indicates that the first feature has a lower horizontal height than the second feature.

[0018] It should be noted that when an element is referred to as "fixed to" or "disposed on" another element, it can be directly on the other element or there may also be an intermediate element. When an element is considered to be "connected" to another element, it can be directly connected to the other element or there may be an intermediate element at the same time. The terms "vertical", "horizontal", "upper", "lower", "left", "right" and similar expressions used herein are only for illustrative purposes and do not represent the only implementation.

[0019] The formation method of the diamond-like carbon film of the present invention will be further described below in conjunction with embodiments, but the present invention is not limited thereby. The method of the present invention aims to provide a formation method of a diamond-like carbon film, which is simple and easy to implement, and can form a hydrogen-free fluorinated diamond-like carbon film, so as to meet different application ranges.

[0020] In an embodiment of the formation method of the diamond-like carbon film of the present invention, the following steps are included:

[0021] Providing a glass substrate; and

[0022] Depositing a hydrogen-free fluorinated diamond-like carbon film on the glass substrate;

[0023] In the deposition, a fluorine-containing gas and isopropyl alcohol or n-propyl alcohol are introduced into the reaction chamber for chemical vapor deposition.

[0024] In the method of the present invention, first, a diamond-like carbon film is formed on the glass substrate, and then a hydrogen-free fluorinated diamond-like carbon film is formed by introducing a fluorine-containing gas and isopropyl alcohol or n-propyl alcohol into the reaction chamber for chemical vapor deposition. Specifically, the introduction of the fluorine-containing gas can deposit fluorinated diamond-like carbon, and the introduced isopropyl alcohol or n-propyl alcohol can remove the hydrogen atoms in the diamond-like carbon, thereby forming a hydrogen-free fluorinated diamond-like carbon film. This method is simple and easy to implement, can meet the needs of different application fields, and has broad application prospects.

[0025] Specifically, in a specific embodiment, first, a glass substrate is prepared, cleaned and dried, and then placed in the reaction chamber. In the present invention, plasma-enhanced chemical vapor deposition (PECVD) is used, so the reaction chamber is a PECVD reaction chamber. Before performing PEVCD, reactants are introduced into the reaction chamber. In the present invention, the reactants are a fluorine-containing gas and a hydroalcohol, and the hydroalcohol is preferably isopropyl alcohol or n-propyl alcohol. Specifically, the introduction times of the fluorine-containing gas and isopropyl alcohol or n-propyl alcohol are different. For example, the introduction of isopropyl alcohol or n-propyl alcohol is later than the introduction of the fluorine-containing gas. That is, the fluorine-containing gas is first introduced into the reaction chamber for reaction. Specifically, the fluorine-containing gas is at least one of SF6 and C2F4. After introduction, the pressure of the reaction chamber is controlled to be 3.0×10 -3 Pa to 3.5×10 -3 Pa, control the temperature of the reaction chamber to 150 - 200 °C, and perform PECVD under this condition to form a fluorinated one. After a period of time, isopropanol or n-propanol is introduced into the reaction chamber. At this time, control the air pressure of the reaction chamber to remain unchanged, and control the temperature of the reaction chamber to 25 - 80 °C. The introduced isopropanol or n-propanol can remove the hydrogen atoms in the diamond-like carbon, thereby forming a hydrogen-free fluorinated diamond-like carbon film.

[0026] In summary, in the method of the present invention, first, a diamond-like carbon film is formed on a glass substrate, and then chemical vapor deposition is carried out by introducing a fluorine-containing gas and isopropanol or n-propanol into the reaction chamber to form a hydrogen-free fluorinated diamond-like carbon film. Specifically, the introduction of the fluorine-containing gas can deposit and form a fluoride-containing diamond-like carbon, and the introduced isopropanol or n-propanol can remove the hydrogen atoms in the diamond-like carbon, thereby forming a hydrogen-free fluorinated diamond-like carbon film. This method is simple and feasible, can meet the requirements of different application fields, and has a wide application prospect.

[0027] The above-disclosed are only the preferred embodiments of the present invention. Of course, the scope of the rights of the present invention cannot be limited by this. Therefore, equivalent changes made according to the scope of the patent application of the present invention still fall within the scope covered by the present invention.

Claims

1. A method for forming a diamond-like carbon film, characterized in that, Including the following steps: Providing a glass substrate; And Depositing a hydrogen-free fluorinated diamond-like carbon film on the glass substrate; In the deposition, a fluorine-containing gas and isopropyl alcohol or n-propyl alcohol are introduced into the reaction chamber for chemical vapor deposition.

2. The method for forming a diamond-like carbon film according to claim 1, characterized in that, The chemical vapor deposition is plasma-enhanced chemical vapor deposition.

3. The method for forming a diamond-like carbon film according to claim 1, characterized in that, The fluorine-containing gas is at least one of SF6 and C2F4.

4. The method for forming a diamond-like carbon film according to claim 1, wherein, Before introducing the isopropanol or n-propanol, control the air pressure in the reaction chamber to be 3.0×10 -3 Pa to 3.5×10 -3 Pa, and control the temperature of the reaction chamber to be 150 - 200 °C.

5. The method for forming a diamond-like carbon film according to claim 1, characterized in that, After introducing the isopropyl alcohol or n-propyl alcohol, the air pressure in the reaction chamber is controlled to be constant, and the temperature of the reaction chamber is controlled to be 25-80 °C.

6. The method for forming a diamond-like carbon film according to claim 1, characterized in that, The introduction of the isopropyl alcohol or the n-propyl alcohol is later than the introduction of the fluorine-containing gas.