Diamond semiconductor material production equipment based on MPCVD technology

Abstract

The invention discloses diamond semiconductor material production equipment based on an MPCVD technology, and relates to the technical field of diamond production. A microwave generator is installed on a first deposition cover, a second through-flow cavity communicating with a first through-flow cavity is formed in the cavity wall of a second deposition cover, the second deposition cover comprises a plurality of drainage holes formed in the annular direction, and the second deposition cover is horizontally matched with elastic bearing mechanisms on the two sides of the second deposition cover in an inserted mode. A first self-flowing hole located in the inner side of the water storage tank is formed in the flow guide pipe, a guide pipe arranged on the flow guide pipe in a sleeving mode is installed in the water storage tank, and a second self-flowing hole matched with the first self-flowing hole is formed in the guide pipe. According to the invention, the ellipsoidal deposition reaction cavity is designed into a structure of the first deposition cover and the second deposition cover which can be separated from each other, and after the growth of the diamond film is completed, the second deposition cover is controlled to move to the outer side of the deposition control frame, so that a substrate material after the growth of the diamond film is completed can be conveniently taken out and a new substrate material is placed.

Description

Technical Field

[0001] The present invention belongs to the technical field of diamond production, and particularly relates to a production device for diamond semiconductor materials based on MPCVD technology. Background Art

[0002] Microwave Plasma Chemical Vapor Deposition (MPCVD) is a commonly used method for preparing high-quality diamond materials, and can be used to prepare tool-grade, heat sink-grade, gemstone-grade, optical-grade, and electronic-grade diamond single crystals and polycrystalline materials. The core of the MPCVD system is a microwave resonant cavity. The resonant cavity made of metal will reflect the input microwave, and finally resonate at the substrate position to form a high microwave electric field region within a certain range, so that the reaction gas forms a high-energy plasma cluster at the substrate position and deposits on the substrate to form a diamond film.

[0003] A reasonably designed MPCVD resonant cavity can ensure the efficient coupling of microwave energy within a wide process range, while avoiding the excitation of secondary plasma and not etching the cavity and the microwave window, so as to prepare high-quality diamond materials. Through experimental research, it is found that an ellipsoidal deposition reaction cavity can improve the deposition efficiency of the reaction gas on the substrate and at the same time improve the production quality of the diamond film.

[0004] Most of the existing ellipsoidal deposition reaction cavities are of an integral structure. Due to the special structure of the deposition reaction cavity with narrower upper and lower sides and wider middle part, and the deposition stage for placing the substrate is at the inner bottom of the deposition reaction cavity, it is extremely inconvenient to place the substrate and take out the substrate after the diamond film production is completed, which greatly affects the production efficiency of the diamond film. Therefore, we provide a production device for diamond semiconductor materials based on MPCVD technology to solve the above problems. Summary of the Invention

[0005] The purpose of the present invention is to provide a production device for diamond semiconductor materials based on MPCVD technology. Through the specific structural design of a deposition control mechanism, a substrate carrying mechanism, an elastic support mechanism, a deposition cover transfer mechanism, and a deposition cover pushing component, the problem that the existing ellipsoidal deposition reaction cavity, due to its integral structure, makes it extremely inconvenient to place the substrate and take out the substrate after the diamond film production is completed, greatly affecting the production efficiency of the diamond film, is solved.

[0006] To solve the above technical problems, the present invention is realized through the following technical solutions: The present invention is a diamond semiconductor material production device based on MPCVD technology, including a deposition control mechanism. The deposition control mechanism includes a first deposition cover controlled by lifting. A microwave generator is installed on the first deposition cover. The microwave generator includes a microwave antenna extending into the inner cavity of the first deposition cover. A first through-flow cavity is provided in the cavity wall of the first deposition cover; a substrate carrying mechanism is provided directly below the first deposition cover. The substrate carrying mechanism includes a second deposition cover coaxial with the first deposition cover. A second through-flow cavity communicating with the first through-flow cavity is provided in the cavity wall of the second deposition cover. The second deposition cover includes a number of drain holes arranged circumferentially; and an elastic support mechanism is symmetrically arranged on both sides of the deposition control mechanism. The second deposition cover is horizontally inserted and matched with the elastic support mechanisms on both sides thereof; A flow guide pipe communicating with the first through-flow cavity is installed on one side of the first deposition cover. A water storage tank is provided above the first deposition cover. A first self-flow hole located inside the water storage tank is opened on the flow guide pipe. A guide pipe sleeved on the flow guide pipe is installed inside the water storage tank. A second self-flow hole adapted to the first self-flow hole is opened on the guide pipe; A hollow drainage part adapted to the second deposition cover is provided directly below the first deposition cover. When the second deposition cover is controlled to move down to fit inside the hollow drainage part, the water flowing through the first through-flow cavity and the second through-flow cavity is collected through the drain holes into the hollow drainage part for export.

[0007] In some embodiments, the deposition control mechanism further includes a deposition control frame. An elevating frame is provided inside the deposition control frame. The first deposition cover includes an upper epitaxial disk. The upper epitaxial disk is fixedly installed inside the elevating frame. A first hydraulic cylinder connected to the elevating frame is installed on the top of the deposition control frame. The water storage tank is installed on the top of the deposition control frame. A circumferential flow guide cavity is provided inside the upper epitaxial disk. The flow guide pipe is installed on the circumferential side surface of the upper epitaxial disk and communicates with the circumferential flow guide cavity. The first through-flow cavity and the circumferential flow guide cavity are communicated through a number of water inlet holes.

[0008] In some embodiments, the microwave generator further includes a microwave power supply installed on the inner side wall of the elevating frame. A wave guide channel is installed on one side of the microwave power supply. A quartz bell cover coaxial with the first deposition cover is installed at the bottom of the upper epitaxial disk. The quartz bell cover and the wave guide channel are communicated through a wave guide pipe. The microwave antenna is installed inside the wave guide channel and its lower end extends into the quartz bell cover. A sealing ring is installed at the bottom of the first deposition cover. A sealing groove adapted to the sealing ring is provided at the top of the second deposition cover.

[0009] In some embodiments, the hollow drainage part includes a positioning ring seat installed inside the deposition control frame through a support rod. A hollow drainage ring coaxial with the positioning ring seat is fixed at the top of the positioning ring seat. Confluence holes communicating with its inner cavity are provided on the inner wall of the hollow drainage ring, and the confluence holes are arranged in one-to-one correspondence with the drainage holes; the second deposition cover includes a lower extension disk, and the drainage holes are uniformly arranged on the circumferential side surface of the lower extension disk and communicate with the second through-flow cavity; the hollow drainage part further includes a hollow water collection ring installed on the top of the hollow drainage ring. The inner diameter of the hollow water collection ring is the same as that of the hollow drainage ring. A water collection pipe inserted into the inner cavity of the hollow drainage ring is installed at the bottom of the hollow water collection ring. Water collection holes communicating with its inner cavity are provided on the inner wall of the hollow water collection ring, and the water collection holes are arranged in one-to-one correspondence with the confluence holes. An upper sealing ring is installed on the top of the lower extension disk, and a lower sealing ring is installed at the bottom of the lower extension disk. The outer diameters of both the upper sealing ring and the lower sealing ring are the same as the diameter of the lower extension disk.

[0010] In some embodiments, a signal trigger seat located below the positioning ring seat is fixed inside the deposition control frame. A pressure sensor is installed on the top of the signal trigger seat. A drain pipe communicating with its inner cavity is installed on one side of the hollow drainage ring. An air supply pipe and an air extraction pipe are respectively installed at the bottom of the deposition control frame. Solenoid valves are installed on both the air supply pipe and the air extraction pipe. A horizontally extending seat is fixed at a position near the bottom on one side of the deposition control frame; a first docking pipe and a second docking pipe communicating with its inner cavity are respectively installed at the bottom of the second deposition cover. The first docking pipe is coaxial with the air supply pipe, and the second docking pipe is coaxial with the air extraction pipe. A negative pressure generator is installed at the bottom of the second deposition cover. A hollow negative pressure seat is installed at the inner bottom of the second deposition cover, and the hollow negative pressure seat is used to carry the substrate material.

[0011] In some embodiments, the elastic support mechanism includes a first mounting seat installed on the deposition control frame. A first elastic member is installed on the top of the first mounting seat. A support bracket connected to the first elastic member is slidably sleeved on the deposition control frame. A horizontal moving plate is provided on one side of the support bracket. A horizontal support rod is fixed on one side of the horizontal moving plate. A plurality of support sleeves are fixedly installed on the circumference of the second deposition cover. The horizontal support rod is inserted and matched with the corresponding support sleeve; a moving rod slidably matched with the support bracket is fixed on the other side of the horizontal moving plate. A connecting disk fixed at the end of the moving rod is connected to the support bracket through a second elastic member. An electromagnet magnetically repelling the horizontal moving plate is installed on the support bracket. Two concentric alignment parts are symmetrically and fixedly installed on the circumferential side surface of the second deposition cover.

[0012] In some embodiments, the present invention further includes a deposition hood transfer mechanism; wherein, the deposition hood transfer mechanism includes a second mounting seat installed on a horizontally extending seat, a second hydraulic cylinder is installed on the second mounting seat, a transfer frame connected to the second hydraulic cylinder is slidably disposed on the top of the horizontally extending seat, a guide rail carrier is fixedly installed on the top of the transfer frame, a support frame slidably engaged with a limiting channel on the deposition control frame is fixed on the guide rail carrier, and two deposition hood pushing assemblies are symmetrically installed on the guide rail carrier.

[0013] In some embodiments, the deposition hood pushing assembly includes a cylinder mounting plate fixed on the top of the guide rail carrier, a pushing cylinder is installed on the cylinder mounting plate, a pushing frame slidably connected to the guide rail carrier is connected to the output end of the pushing cylinder, a horizontal supporting rod inserted and matched with a corresponding supporting sleeve is fixed on the pushing frame, and a pushing roller adapted to the concentric alignment portion is installed on the pushing frame.

[0014] The present invention has the following beneficial effects: 1. By designing the ellipsoidal deposition reaction chamber into a separable first deposition hood and second deposition hood structure, after the diamond film growth is completed, the transfer frame is controlled by the second hydraulic cylinder to move closer to the second hydraulic cylinder, so that the support frame slides along the limiting channel on the deposition control frame, and the entire guide rail carrier drives the second deposition hood thereon to move outside the deposition control frame. In this way, it is convenient to take out the substrate material on which the diamond film has grown and place a new substrate material, and the production efficiency of the diamond film is ensured through this automatic control method.

[0015] 2. During the process of controlling the two pushing frames to approach each other, the pushing roller abuts against the inclined plate of the concentric alignment portion and pushes the concentric alignment portion to move upward (i.e., pushes the second deposition hood to move slightly upward). When the pushing roller just slides to the bottom of the horizontal plate along the inclined plate of the concentric alignment portion, the horizontal supporting rod on the pushing frame just concentrically aligns with the corresponding supporting sleeve. As the pushing roller continues to move, the horizontal supporting rod gradually approaches the supporting sleeve until the pushing roller fits against the vertical limiting plate. At this time, the horizontal supporting rods on the two pushing frames just respectively insert into the corresponding supporting sleeves on the second deposition hood, and the bottoms of the first docking pipe and the second docking pipe on the second deposition hood just move above the hollow water collecting ring and the upper sealing ring. Through this control method, it can effectively avoid the situation that the second deposition hood cannot return to the set position due to the weakening of the elastic force of the first elastic member, thereby affecting the horizontal movement of the second deposition hood.

[0016] 3. When the substrate material is placed on the top of the hollow negative pressure seat in the present invention, the inside of the hollow negative pressure seat is evacuated by a negative pressure generator. Under the action of negative pressure, the substrate material is tightly adsorbed and fixed on the hollow negative pressure seat, so that the substrate material will not be displaced on the hollow negative pressure seat during the transportation of reaction gas and the deposition reaction process, which is beneficial to ensuring the stability of the growth process of diamond film on the substrate material.

[0017] 4. In the initial state of the present invention, the lifting frame is close to the inner top of the deposition control frame under the action of the first hydraulic cylinder. At this time, the first self-flow hole on the diversion pipe is misaligned with the second self-flow hole on the guiding pipe, and the first deposition cover is located at the highest position inside the deposition control frame. When the first deposition cover on the lifting frame is controlled by the first hydraulic cylinder to move down to the lowest position, the diversion pipe slides down along the guiding pipe so that the first self-flow hole aligns with the second self-flow hole, and the cooling water in the water storage tank flows into the first through-flow cavity on the first deposition cover along the second self-flow hole and the first self-flow hole by gravity, which is used to realize the dynamic cooling of the first deposition cover and is beneficial to ensuring the deposition quality of diamond film on the surface of the substrate material. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required for describing the embodiments will be briefly introduced below. Obviously, the drawings in the following description are only some embodiments of the present invention, and those of ordinary skill in the art can also obtain other drawings based on these drawings without creative efforts.

[0019] Figure 1 It is a schematic structural diagram of a diamond semiconductor material production device based on MPCVD technology in the present invention.

[0020] Figure 2 For Figure 1 structural side view.

[0021] Figure 3 For Figure 1 partial structural schematic diagram.

[0022] Figure 4 It is a schematic structural diagram of a deposition control mechanism in the present invention.

[0023] Figure 5 For Figure 4 structural side view.

[0024] Figure 6 It is a structural sectional view of a deposition control mechanism in the present invention.

[0025] Figure 7 For Figure 6 local enlarged structural view at A in

[0026] Figure 8 is Figure 6 The enlarged view of the local structure at position B in

[0027] Figure 9 is Figure 6 The enlarged view of the local structure at position C in

[0028] Figure 10 The structural schematic diagram of the substrate carrier mechanism in the present invention.

[0029] Figure 11 The structural sectional view of the substrate carrier mechanism in the present invention.

[0030] Figure 12 The structural schematic diagram of the elastic support mechanism in the present invention.

[0031] Figure 13 The structural schematic diagram of the deposition hood pushing assembly in the present invention.

[0032] Figure 14 is Figure 13 The enlarged view of the local structure at position D in

[0033] In the accompanying drawings, the list of components represented by each reference numeral is as follows:

[0034] 1 - Deposition control mechanism, 101 - First deposition cover, 102 - Microwave antenna, 103 - First flow-through cavity, 104 - Diversion pipe, 105 - Water storage tank, 106 - First gravity flow hole, 107 - Guide pipe, 108 - Second gravity flow hole, 109 - Deposition control frame, 110 - Lifting frame, 111 - Upper epitaxial disk, 112 - First hydraulic cylinder, 113 - Annular diversion cavity, 114 - Water inlet hole, 115 - Microwave power supply, 116 - Waveguide channel, 117 - Quartz bell jar, 118 - Waveguide tube, 119 - Sealing ring, 120 - Positioning ring seat, 121 - Hollow drainage ring, 122 - Confluence hole, 123 - Signal trigger seat, 124 - Pressure sensor, 125 - Drain pipe, 126 - Gas transmission pipeline, 127 - Air extraction pipeline, 128 - Solenoid valve, 129 - Horizontal extension seat, 130 - Limit channel, 2 - Substrate bearing mechanism, 201 - Second deposition cover, 202 - Second flow-through cavity, 203 - Drain hole, 204 - Sealing groove, 205 - Lower epitaxial disk, 206 - First docking pipe, 207 - Second docking pipe, 208 - Negative pressure generator, 209 - Hollow negative pressure seat, 210 - Support sleeve, 211 - Concentric alignment part, 3 - Elastic support mechanism, 301 - First mounting seat, 302 - First elastic member, 303 - Support bracket, 304 - Horizontal moving plate, 305 - Horizontal support rod, 306 - Moving rod, 307 - Second elastic member, 308 - Electromagnet, 4 - Deposition cover transfer mechanism, 401 - Second mounting seat, 402 - Second hydraulic cylinder, 403 - Transfer frame, 404 - Guide rail carrier, 405 - Support frame, 5 - Deposition cover pushing assembly, 501 - Cylinder mounting plate, 502 - Pushing cylinder, 503 - Pushing frame, 504 - Pushing roller. Detailed implementation manners

[0035] The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present invention without creative efforts shall fall within the protection scope of the present invention.

[0036] For the first specific embodiment, please refer to Figure 1-14, the present invention is a production device for diamond semiconductor materials based on MPCVD technology, including a deposition control mechanism 1, a substrate carrying mechanism 2, and an elastic supporting mechanism 3; the deposition control mechanism 1 includes a first deposition cover 101 controlled by lifting, a microwave generator is installed on the first deposition cover 101, the microwave generator includes a microwave antenna 102 extending into the inner cavity of the first deposition cover 101, and a first through-flow cavity 103 is provided in the cavity wall of the first deposition cover 101; the substrate carrying mechanism 2 is arranged directly below the first deposition cover 101, the substrate carrying mechanism 2 includes a second deposition cover 201 coaxial with the first deposition cover 101, a second through-flow cavity 202 communicating with the first through-flow cavity 103 is provided in the cavity wall of the second deposition cover 201, and the second deposition cover 201 includes a plurality of drain holes 203 arranged circumferentially; the elastic supporting mechanism 3 is symmetrically arranged on both sides of the deposition control mechanism 1, and the second deposition cover 201 is horizontally inserted and matched with the elastic supporting mechanisms 3 on both sides thereof; a diversion pipe 104 communicating with the first through-flow cavity 103 is installed on one side of the first deposition cover 101, a water storage tank 105 is provided above the first deposition cover 101, a first self-flow hole 106 located inside the water storage tank 105 is opened on the diversion pipe 104, a guiding pipe 107 sleeved on the diversion pipe 104 is installed inside the water storage tank 105, and a second self-flow hole 108 adapted to the first self-flow hole 106 is opened on the guiding pipe 107; a hollow drainage part adapted to the second deposition cover 201 is provided directly below the first deposition cover 101. When the second deposition cover 201 is controlled to move down to fit inside the hollow drainage part, the water flowing through the first through-flow cavity 103 and the second through-flow cavity 202 is collected into the hollow drainage part through the drain holes 203 for export.

[0037] In some embodiments, such as Figure 4 , Figure 5 and Figure 7As shown, the deposition control mechanism 1 further includes a deposition control frame 109, which is installed on the external frame. An elevating frame 110 is provided inside the deposition control frame 109. The first deposition hood 101 includes an upper extension disk 111, and the upper extension disk 111 is fixedly installed inside the elevating frame 110. A first hydraulic cylinder 112 connected to the elevating frame 110 is installed on the top of the deposition control frame 109. The water storage tank 105 is installed on the top of the deposition control frame 109. An annular guide flow cavity 113 is provided inside the upper extension disk 111. The guide pipe 104 is installed on the circumferential side surface of the upper extension disk 111 and is communicated with the annular guide flow cavity 113. The first through-flow cavity 103 is communicated with the annular guide flow cavity 113 through a plurality of water inlet holes 114; in the initial state, the elevating frame 110 is close to the inner top of the deposition control frame 109 under the action of the first hydraulic cylinder 112. At this time, the first self-flow hole 106 on the guide pipe 104 is misaligned with the second self-flow hole 108 on the guide pipe 107 (that is, the first self-flow hole 106 is located above the second self-flow hole 108). The first deposition hood 101 is located at the highest position inside the deposition control frame 109. When the first deposition hood 101 on the elevating frame 110 is controlled by the first hydraulic cylinder 112 to move down to the lowest position, the guide pipe 104 slides down along the guide pipe 107 so that the first self-flow hole 106 is aligned with the second self-flow hole 108. The cooling water in the water storage tank 105 then flows into the first through-flow cavity 103 on the first deposition hood 101 by self-flow along the second self-flow hole 108 and the first self-flow hole 106, so as to realize the dynamic cooling of the first deposition hood 101 (heat will be released during the deposition reaction process).

[0038] In some embodiments, such as Figure 6 and Figure 7As shown, the microwave generator also includes a microwave power supply 115 (providing high microwave input power) installed on the inner wall of the lifting frame 110, a waveguide channel 116 is installed on one side of the microwave power supply 115, a quartz bell jar 117 coaxial with the first deposition cover 101 is installed at the bottom of the upper epitaxial disk 111 (the quartz bell jar 117 is used to maintain the vacuum inside the ellipsoidal deposition reaction chamber and is also used as a microwave input window), the quartz bell jar 117 and the waveguide channel 116 are connected by a waveguide tube 118, the microwave antenna 102 is installed inside the waveguide channel 116 and the lower end extends into the quartz bell jar 117, a sealing ring 119 is installed at the bottom of the first deposition cover 101, and a sealing groove 204 adapted to the sealing ring 119 is provided on the top of the second deposition cover 201. When the first deposition cover 101 on the lifting frame 110 is controlled by the first hydraulic cylinder 112, the first deposition cover 101 is sealed. When the cover 101 moves down to the lowest position, the first deposition cover 101 and the second deposition cover 201 are tightly assembled together to form an ellipsoidal deposition reaction chamber. At this time, the first flow chamber 103 is connected to the second flow chamber 202. The sealing of the docking gap between the first deposition cover 101 and the second deposition cover 201 is achieved by the cooperation of the sealing ring 119 and the sealing groove 204. When the microwave power supply 115 is started, the microwave energy generated enters the quartz bell cover 117 along the waveguide channel 116, the waveguide 118 and the microwave antenna 102. The microwave energy then enters the ellipsoidal deposition reaction chamber through the quartz bell cover 117, and after being emitted by the cavity wall of the ellipsoidal deposition reaction chamber, high-energy resonance is generated at the substrate position, and then high-energy plasma groups are generated. Under the action of the high-energy plasma groups, the reaction gas is deposited on the substrate surface to form a diamond film.

[0039] In some embodiments, such as Figure 4 , Figure 8 and Figure 10 As shown, the hollow drainage part includes a positioning ring seat 120 installed on the inner side of the deposition control frame 109 through a support rod, a hollow drainage ring 121 coaxial with the positioning ring seat 120 is fixed on the top, and the inner wall of the hollow drainage ring 121 is provided with a confluence hole 122 connected with its inner cavity, and the confluence hole 122 is arranged in a one-to-one correspondence with the drainage hole 203; the second deposition cover 201 includes a lower epitaxial disk 205, and the drainage holes 203 are evenly arranged on the circumferential side of the lower epitaxial disk 205 and are connected with the second flow cavity 202. When the lower epitaxial disk 205 moves downward and fits tightly onto the inner wall of the hollow drainage ring 121, the lower epitaxial disk 205 is in contact with the positioning ring seat 120 at this time, and each drainage hole 203 is respectively aligned with the confluence hole 122 on the hollow drainage ring 121. During the deposition reaction process, the cooling water flowing along the second flow cavity 202 enters the inner cavity of the hollow drainage ring 121 through the drainage hole 203 and the confluence hole 122 to be discharged and collected.

[0040] The hollow drainage part also includes a hollow water collecting ring installed on the top of the hollow drainage ring 121. The inner diameter of the hollow water collecting ring is the same as the inner diameter of the hollow drainage ring 121. A water collecting pipe inserted into the inner cavity of the hollow drainage ring 121 is installed at the bottom of the hollow water collecting ring. The inner wall of the hollow water collecting ring is provided with a water collecting hole connected to its inner cavity. The water collecting hole and the confluence hole 122 are arranged in a one-to-one correspondence. An upper sealed ring is installed on the top of the lower epitaxial disk 205, and a lower sealed ring is installed on the bottom of the lower epitaxial disk 205. The outer diameters of the upper sealed ring and the lower sealed ring are the same as the diameter of the lower epitaxial disk 205 (the above structure is not shown in the figure). When the lower epitaxial disk 205 moves downward and fits tightly onto the inner wall of the hollow drainage ring 121, the inner wall of the hollow water collecting ring is fitted with the side surface of the upper sealed ring to achieve the sealing of each water collecting hole, so that the cooling water entering the inner cavity of the hollow drainage ring 121 along the drainage hole 203 and the confluence hole 122 can only be discharged and collected.

[0041] In some embodiments, such as Figure 4 and Figure 8 As shown, a signal trigger seat 123 located below the positioning ring seat 120 is fixed inside the deposition control frame 109, a pressure sensor 124 is installed on the top of the signal trigger seat 123, a drain pipe 125 connected to the inner cavity of the hollow drain ring 121 is installed on one side of the hollow drain ring 121, and the cooling water entering the inner cavity of the hollow drain ring 121 is discharged along the drain pipe 125 to complete the collection, and a gas pipeline 126 and an exhaust pipeline 127 are installed at the bottom of the deposition control frame 109 (the gas pipeline 126 is used to provide gas raw materials for diamond growth, and the gas raw materials include hydrogen and methane, and the exhaust pipeline 127 is externally connected to an exhaust pump), and solenoid valves 126 and exhaust pipelines 127 are installed on both. 28. The gas pipeline 126 is connected to an external reaction gas delivery device. When the solenoid valve 128 on the gas pipeline 126 is opened and the solenoid valve 128 on the exhaust pipeline 127 is closed, a certain amount of reaction gas can be delivered to the ellipsoidal deposition reaction chamber through the gas pipeline 126. After the reaction gas input is completed, the solenoid valve 128 on the gas pipeline 126 is controlled to be closed. A horizontal extension seat 129 is fixed on one side of the deposition control frame 109 near the bottom. During the diamond growth process, the growth conditions can be controlled as follows: hydrogen flow rate 400sccm, methane flow rate 20sccm, microwave power 10kW, gas pressure 20kPa, and stable growth for 360h.

[0042] At the bottom of the second deposition cover 201, a first docking pipe 206 and a second docking pipe 207 communicating with its inner cavity are respectively installed. The first docking pipe 206 is coaxially arranged with the gas transmission pipeline 126, and the second docking pipe 207 is coaxially arranged with the air extraction pipeline 127. A negative pressure generator 208 is installed at the bottom of the second deposition cover 201, and a hollow negative pressure seat 209 is installed at the inner bottom of the second deposition cover 201. The hollow negative pressure seat 209 is used to carry the substrate material. When the substrate material is placed on the top of the hollow negative pressure seat 209, the inside of the hollow negative pressure seat 209 is evacuated by the negative pressure generator 208. Under the action of negative pressure, the substrate material is tightly adsorbed and fixed on the hollow negative pressure seat 209, so that the substrate material will not be displaced on the hollow negative pressure seat 209 during the transportation of the reaction gas and the deposition reaction process, which is beneficial to ensuring the stability of the growth process of the diamond film on the substrate material.

[0043] In the initial state, the first deposition cover 101 is located at the highest position, and the second deposition cover 201 is elastically supported by the elastic support mechanisms 3 on both sides thereof, that is, the first deposition cover 101 and the second deposition cover 201 are in a completely separated state at this time. During the process of controlling the lifting frame 110 to move downward by the first hydraulic cylinder 112, the first deposition cover 101 moving synchronously with the lifting frame 110 gradually approaches the second deposition cover 201. When the bottom of the first deposition cover 101 just fits onto the top of the second deposition cover 201, the sealing ring 119 at the bottom of the first deposition cover 101 just fits into the sealing groove 204 at the top of the second deposition cover 201. As the first deposition cover 101 continues to move downward, the second deposition cover 201 is gradually pushed downward by the first deposition cover 101 and compresses the elastic support mechanisms 3 on both sides thereof until the lower outer extension plate 205 on the second deposition cover 201 fits onto the positioning ring seat 120 (at this time, the U-shaped pressing plate at the bottom of the lower outer extension plate 205 just presses on the pressure sensor 124, and the controller receives this pressure signal and controls the first hydraulic cylinder 112 to close). At this time, the circumferential side surface of the lower outer extension plate 205 is closely attached to the inner wall of the hollow drainage ring 121, and each drainage hole 203 is respectively aligned with the confluence holes 122 on the hollow drainage ring 121. At the same time, the inner wall of the hollow water collection ring is attached to the circumferential side surface of the upper sealing ring to block each water collection hole. The first docking pipe 206 is inserted into the gas transmission pipeline 126 below it, the second docking pipe 207 is inserted into the air extraction pipeline 127 below it, and the first self-flow hole 106 is just aligned with the second self-flow hole 108.

[0044] The cooling water in the water storage tank 105 flows by gravity along the second gravity hole 108 and the first gravity hole 106 into the first through-flow cavity 103 on the first deposition cover 101. After flowing through the second through-flow cavity 202 on the second deposition cover 201, it enters the inner cavity of the hollow drain ring 121 along the drain hole 203 and the confluence hole 122. The cooling water entering the inner cavity of the hollow drain ring 121 is discharged along the drain pipe 125 to complete the collection. After delivering a certain amount of reaction gas to the ellipsoidal deposition reaction cavity, the microwave power supply 115 is started to deposit and grow the diamond film on the surface of the substrate material. After the diamond film growth is completed, the remaining gas in the ellipsoidal deposition reaction cavity is evacuated through the air extraction pipe 127. After the diamond film growth is completed, first, the lifting frame 110 is slightly lifted by the first hydraulic cylinder 112. Under the elastic restoring force of the elastic support mechanism 3, the second deposition cover 201 and the first deposition cover 101 are synchronously lifted slightly. At this time, the drain hole 203 just aligns with the water collection hole on the hollow water collection ring, and the lower sealing ring just moves up to cooperate with the inside of the hollow drain ring 121 to block each confluence hole 122. And the first gravity hole 106 is misaligned with the second gravity hole 108, and the cooling water in the water storage tank 105 stops flowing out. The remaining cooling water in the first through-flow cavity 103 and the second through-flow cavity 202 enters the inner cavity of the hollow water collection ring along the drain hole 203 and the water collection hole, and then enters the inner cavity of the hollow drain ring 121 through each water collection pipe to be discharged and collected. After the remaining cooling water is emptied, the lifting frame 110 is continued to be lifted by the first hydraulic cylinder 112 until the first deposition cover 101 moves back to its initial position, and the first deposition cover 101 and the second deposition cover 201 are completely separated again. In this way, the substrate material on which the diamond film growth is completed can be taken out (after releasing the negative pressure adsorption and then taking it out). According to the same control method as above, the diamond film growth on the next substrate material can be continued.

[0045] Specific Embodiment 2, on the basis of Specific Embodiment 1, as Figure 1 and Figure 12 shown, the elastic support mechanism 3 includes a first mounting seat 301 installed on the deposition control frame 109. A first elastic member 302 is installed on the top of the first mounting seat 301. A support bracket 303 connected to the first elastic member 302 is slidably sleeved on the deposition control frame 109 (in order to ensure the elastic strength of the first elastic member 302, a spring structure with higher strength, such as an industrial spring, can be used to ensure that the compressed first elastic member 302 can be reset). A horizontal moving plate 304 is provided on one side of the support bracket 303. A horizontal support rod 305 is fixed on one side of the horizontal moving plate 304. A plurality of support sleeves 210 are fixedly installed on the periphery of the second deposition cover 201. The horizontal support rod 305 is inserted and matched with the corresponding support sleeve 210. In this way, the limit and guidance during the up and down movement of the second deposition cover 201 can be realized, and the second deposition cover 201 can be effectively prevented from deflecting during the up and down movement.

[0046] On the other side of the horizontal moving plate 304, a moving rod 306 slidably engaged with the supporting bracket 303 is fixed. A connecting disc fixed to the end of the moving rod 306 is connected to the supporting bracket 303 through a second elastic member 307. An electromagnet 308 magnetically repulsive to the horizontal moving plate 304 is installed on the supporting bracket 303. Initially, the electromagnet 308 is in a power-off and demagnetized state. Under the elastic force of the second elastic member 307, the horizontal moving plate 304 is close to the supporting bracket 303. On the circumferential side of the second deposition cover 201, two concentric alignment parts 211 are symmetrically and fixedly installed. The specific structure of the concentric alignment part 211 is as Figure 11 shown, that is, the concentric alignment part 211 is composed of an inclined plate and a horizontal plate. At the same time, a vertical limiting plate is fixed to the bottom of the horizontal plate. When aligning the supporting sleeve 210 on the second deposition cover 201 with the horizontal supporting rod 305, the electromagnet 308 is controlled to be energized to generate a magnetic repulsive force on the horizontal moving plate 304 and compress the second elastic member 307, so that the horizontal supporting rod 305 moves horizontally and is inserted into the corresponding supporting sleeve 210. Thus, the elastic support of the second deposition cover 201 by the supporting brackets 303 on the opposite sides is realized. After controlling the electromagnet 308 to be powered off and demagnetized, the elastic restoring force of the second elastic member 307 can be used to drive the horizontal supporting rod 305 to move reversely out of the corresponding supporting sleeve 210. At this time, the supporting brackets 303 on the opposite sides no longer support the second deposition cover 201.

[0047] In some embodiments, as Figure 1 and, Figure 13 and Figure 14 shown, the present invention further includes a deposition cover transfer mechanism 4; wherein, the deposition cover transfer mechanism 4 includes a second mounting seat 401 installed on the horizontal extension seat 129. A second hydraulic cylinder 402 is installed on the second mounting seat 401. A transfer frame 403 connected to the second hydraulic cylinder 402 is slidably arranged on the top of the horizontal extension seat 129. A guide rail carrier 404 is fixedly installed on the top of the transfer frame 403. A support frame 405 slidably engaged with the limiting channel 130 on the deposition control frame 109 is fixed on the guide rail carrier 404 to ensure the smooth horizontal movement of the guide rail carrier 404. Two deposition cover pushing components 5 are symmetrically installed on the guide rail carrier 404; the deposition cover pushing component 5 includes a cylinder mounting plate 501 fixed to the top of the guide rail carrier 404. A pushing cylinder 502 is installed on the cylinder mounting plate 501. The output end of the pushing cylinder 502 is connected to a pushing frame 503 slidably connected to the guide rail carrier 404. A horizontal supporting rod 305 inserted and matched with the corresponding supporting sleeve 210 is fixed on the pushing frame 503. A pushing roller 504 adapted to the concentric alignment part 211 is installed on the pushing frame 503.

[0048] After the diamond film growth is completed and the first deposition cover 101 is controlled to move upward and reset, the second deposition cover 201 moves upward to a specified position under the action of the first elastic member 302. At this time, the second deposition cover 201 is supported by the first elastic members 302 on both sides thereof. The first docking pipe 206 is disengaged from the gas transmission pipeline 126, and the second docking pipe 207 is disengaged from the air extraction pipeline 127. Subsequently, the pushing cylinders 502 on both sides of the second deposition cover 201 are simultaneously activated, and the pushing frames 503 are driven to approach each other by the pushing cylinders 502 until the horizontal supporting rods 305 on the pushing frames 503 on both sides are respectively inserted into the corresponding supporting sleeves 210 on the second deposition cover 201. When the elastic force of the first elastic member 302 weakens, during the process of controlling the two pushing frames 503 to approach each other, the pushing rollers 504 abut against the inclined plates of the concentric alignment portion 211 and push the concentric alignment portion 211 to move upward (i.e., push the second deposition cover 201 to move slightly upward). When the pushing rollers 504 just slide to the bottom of the horizontal plate along the inclined plates of the concentric alignment portion 211, the horizontal supporting rods 305 on the pushing frames 503 are just concentrically aligned with the corresponding supporting sleeves 210. As the pushing rollers 504 continue to move, the horizontal supporting rods 305 gradually approach the supporting sleeves 210 until the pushing rollers 504 are in contact with the vertical limiting plates. At this time, the horizontal supporting rods 305 on the pushing frames 503 on both sides are just respectively inserted into the corresponding supporting sleeves 210 on the second deposition cover 201, and the bottoms of the first docking pipe 206 and the second docking pipe 207 on the second deposition cover 201 just move above the hollow water collecting ring and the upper sealing ring. By this control method, it is effectively possible to avoid the second deposition cover 201 being unable to return to the set position due to the weakening of the elastic force of the first elastic member 302, thereby affecting the horizontal movement of the second deposition cover 201. Subsequently, the electromagnet 308 is controlled to be powered off and demagnetized. Under the action of the elastic restoring force of the second elastic member 307, the horizontal supporting rods 305 are driven to move in the reverse direction and disengage from the corresponding supporting sleeves 210. At this time, the supporting brackets 303 on the opposite sides no longer support the second deposition cover 201, and the second deposition cover 201 is supported by the deposition cover pushing assemblies 5 on both sides.

[0049] Next, the second hydraulic cylinder 402 is used to control the movement of the transfer frame 403 closer to the second hydraulic cylinder 402, so that the support frame 405 slides along the limit channel 130 on the deposition control frame 109. The entire guide rail carrier 404 drives the second deposition cover 201 thereon to move to the outside of the deposition control frame 109. In this way, it is convenient to take out the substrate material on which the diamond film growth is completed and place a new substrate material. Through this automatic control method, the production efficiency of the diamond film is guaranteed. When adsorbing and fixing the new substrate material inside the second deposition cover 201, first, the second hydraulic cylinder 402 is used to control the reverse movement of the guide rail carrier 404 to complete the reset. At this time, the second deposition cover 201 returns to the concentric position directly below the first deposition cover 101. Then, the electromagnet 308 is controlled to be energized and magnetized to generate a magnetic repulsive force on the horizontal moving plate 304 and compress the second elastic member 307, so that the horizontal supporting rod 305 moves horizontally and inserts into the corresponding supporting sleeve 210. Thus, the elastic support of the second deposition cover 201 by the supporting brackets 303 on the opposite sides is realized. Subsequently, the pushing cylinders 502 are used to drive the pushing frames 503 to move away from each other to complete the reset. At this time, the horizontal supporting rods 305 on the pushing frames 503 are disengaged from the support of the second deposition cover 201, and the horizontal supporting rods 305 on the supporting brackets 303 resume the support of the second deposition cover 201. Subsequently, the growth of the diamond film on the next substrate material can be continued according to the same control method as above.

[0050] In the description of this specification, the descriptions referring to the terms "one embodiment", "example", "specific example", etc. mean that the specific features, structures, materials or characteristics described in connection with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in a suitable manner in any one or more embodiments or examples.

[0051] The preferred embodiments of the present invention disclosed above are only used to help illustrate the present invention. The preferred embodiments do not describe all the details in detail, nor do they limit the invention to the specific embodiments described. Obviously, many modifications and variations can be made according to the content of this specification. These embodiments are selected and specifically described in this specification to better explain the principles and practical applications of the present invention, so that those skilled in the art in the relevant technical field can well understand and utilize the present invention. The present invention is only limited by the claims and their full scope and equivalents.

Claims

1. A production device for diamond semiconductor materials based on MPCVD technology, characterized in that, include: A deposition control mechanism (1), the deposition control mechanism (1) comprising a first deposition hood (101) that is controlled to be lifted, a microwave generator being mounted on the first deposition hood (101), the microwave generator comprising a microwave antenna (102) extending into an inner cavity of the first deposition hood (101), a first flow cavity (103) being provided in a cavity wall of the first deposition hood (101); A substrate supporting mechanism (2), the substrate supporting mechanism (2) being arranged directly below the first deposition hood (101), the substrate supporting mechanism (2) comprising a second deposition hood (201) coaxial with the first deposition hood (101), a second flow cavity (202) communicating with the first flow cavity (103) being provided in a cavity wall of the second deposition hood (201), the second deposition hood (201) comprising a plurality of drainage holes (203) arranged in an annular direction; and An elastic support mechanism (3), wherein the elastic support mechanism (3) is symmetrically arranged on both sides of the deposition control mechanism (1), and the second deposition cover (201) and the elastic support mechanisms (3) on both sides thereof are horizontally plugged in and matched; A flow guide pipe (104) connected to the first flow chamber (103) is installed on one side of the first sedimentation hood (101); a water storage tank (105) is provided above the first sedimentation hood (101); a first self-flow hole (106) located inside the water storage tank (105) is opened on the flow guide pipe (104); a guide pipe (107) sleeved on the flow guide pipe (104) is installed inside the water storage tank (105); a second self-flow hole (108) matched with the first self-flow hole (106) is opened on the guide pipe (107); A hollow drainage portion adapted to the second deposition hood (201) is provided directly below the first deposition hood (101); when the second deposition hood (201) is controlled to move downward to fit inside the hollow drainage portion, water flowing through the first flow chamber (103) and the second flow chamber (202) is collected into the hollow drainage portion through the drainage hole (203) for discharge.

2. The diamond semiconductor material production equipment based on the MPCVD technology according to claim 1, characterized in that, The deposition control mechanism (1) further comprises a deposition control frame (109), a lifting frame (110) is provided inside the deposition control frame (109), the first deposition cover (101) comprises an upper epitaxial disk (111), the upper epitaxial disk (111) is fixedly mounted inside the lifting frame (110), a first hydraulic cylinder (112) connected to the lifting frame (110) is mounted on the top of the deposition control frame (109), the water storage tank (105) is mounted on the top of the deposition control frame (109), an annular flow guide cavity (113) is provided inside the upper epitaxial disk (111), the flow guide pipe (104) is mounted on the peripheral side of the upper epitaxial disk (111) and is connected to the annular flow guide cavity (113), and the first flow cavity (103) is connected to the annular flow guide cavity (113) through a plurality of water inlet holes (114).

3. The production equipment of diamond semiconductor material based on MPCVD technology according to claim 2, characterized in that, The microwave generator further includes a microwave power supply (115) installed on the inner side wall of the lifting frame (110). A waveguide channel (116) is installed on one side of the microwave power supply (115). A quartz bell jar (117) coaxial with the first deposition cover (101) is installed at the bottom of the upper extension disk (111). The quartz bell jar (117) and the waveguide channel (116) are connected and arranged through a waveguide tube (118). The microwave antenna (102) is installed inside the waveguide channel (116) and its lower end extends into the quartz bell jar (117). A sealing ring (119) is installed at the bottom of the first deposition cover (101). A sealing groove (204) adapted to the sealing ring (119) is provided at the top of the second deposition cover (201).

4. The diamond semiconductor material production equipment based on the MPCVD technology according to claim 3, characterized in that, The hollow drainage part includes a positioning ring seat (120) installed inside the deposition control frame (109) through a support rod. A hollow drainage ring (121) coaxial with it is fixed at the top of the positioning ring seat (120). Confluence holes (122) communicating with its inner cavity are provided on the inner wall of the hollow drainage ring (121). The confluence holes (122) and the drainage holes (203) are arranged in one-to-one correspondence; The second deposition cover (201) includes a lower extension disk (205). The drainage holes (203) are uniformly arranged on the circumferential side surface of the lower extension disk (205) and communicate with the second through-flow cavity (202). The hollow drainage part further includes a hollow water collecting ring installed on the top of the hollow drainage ring (121). The inner diameter of the hollow water collecting ring is the same as that of the hollow drainage ring (121). A water collecting pipe inserted into the inner cavity of the hollow drainage ring (121) is installed at the bottom of the hollow water collecting ring. Water collecting holes communicating with its inner cavity are opened on the inner wall of the hollow water collecting ring. The water collecting holes and the confluence holes (122) are arranged in one-to-one correspondence. An upper sealing ring is installed at the top of the lower extension disk (205), and a lower sealing ring is installed at the bottom of the lower extension disk (205). The outer diameters of the upper sealing ring and the lower sealing ring are the same as the diameter of the lower extension disk (205).

5. The production equipment of diamond semiconductor material based on MPCVD technology according to claim 4, characterized in that, A signal trigger seat (123) located below the positioning ring seat (120) is fixed inside the deposition control frame (109). A pressure sensor (124) is installed on the top of the signal trigger seat (123). A drain pipe (125) communicating with its inner cavity is installed on one side of the hollow drainage ring (121). An air supply pipeline (126) and an air extraction pipeline (127) are respectively installed at the bottom of the deposition control frame (109). Solenoid valves (128) are installed on both the air supply pipeline (126) and the air extraction pipeline (127). A horizontally extending seat (129) is fixed at a position near the bottom on one side of the deposition control frame (109). The bottom of the second deposition cover (201) is respectively provided with a first docking pipe (206) and a second docking pipe (207) communicated with its inner cavity. The first docking pipe (206) is coaxially arranged with the gas transmission pipeline (126), and the second docking pipe (207) is coaxially arranged with the air extraction pipeline (127). A negative pressure generator (208) is installed at the bottom of the second deposition cover (201), and a hollow negative pressure seat (209) is installed at the inner bottom of the second deposition cover (201). The hollow negative pressure seat (209) is used for carrying the substrate material.

6. The production equipment for diamond semiconductor materials based on the MPCVD technology according to claim 5, characterized in that, The elastic support mechanism (3) includes a first mounting seat (301) installed on the deposition control frame (109). A first elastic member (302) is installed on the top of the first mounting seat (301). A support bracket (303) connected to the first elastic member (302) is slidably sleeved on the deposition control frame (109). A horizontal moving plate (304) is arranged on one side of the support bracket (303). A horizontal support rod (305) is fixed on one side of the horizontal moving plate (304). A plurality of support sleeves (210) are fixedly installed on the periphery of the second deposition cover (201). The horizontal support rod (305) is inserted and matched with the corresponding support sleeve (210); A moving rod (306) slidably matched with the support bracket (303) is fixed on the other side of the horizontal moving plate (304). A connecting disk fixed at the end of the moving rod (306) is connected to the support bracket (303) through a second elastic member (307). An electromagnet (308) magnetically repulsive to the horizontal moving plate (304) is installed on the support bracket (303). Two concentric alignment parts (211) are symmetrically and fixedly installed on the peripheral side of the second deposition cover (201).

7. The diamond semiconductor material production equipment based on the MPCVD technology according to claim 6, characterized in that, It further includes a deposition cover transfer mechanism (4); wherein, the deposition cover transfer mechanism (4) includes a second mounting seat (401) installed on the horizontal extension seat (129). A second hydraulic cylinder (402) is installed on the second mounting seat (401). A transfer frame (403) connected to the second hydraulic cylinder (402) is slidably arranged on the top of the horizontal extension seat (129). A guide rail carrier (404) is fixedly installed on the top of the transfer frame (403). A support frame (405) slidably matched with the limit groove (130) on the deposition control frame (109) is fixed on the guide rail carrier (404). Two deposition cover pushing components (5) are symmetrically installed on the guide rail carrier (404).

8. The production equipment for diamond semiconductor materials based on the MPCVD technology according to claim 7, characterized in that, The deposition cover pushing component (5) includes a cylinder mounting plate (501) fixed on the top of the guide rail carrier (404). A pushing cylinder (502) is installed on the cylinder mounting plate (501). The output end of the pushing cylinder (502) is connected to a pushing frame (503) slidably connected to the guide rail carrier (404). A horizontal support rod (305) inserted and matched with the corresponding support sleeve (210) is fixed on the pushing frame (503). A pushing roller (504) adapted to the concentric alignment part (211) is installed on the pushing frame (503).

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