Gas regulating device for atomic layer deposition equipment and atomic layer deposition equipment

Abstract

The invention provides a gas adjusting device for atomic layer deposition equipment and the atomic layer deposition equipment, the gas adjusting device comprises a ventilation assembly, the ventilation assembly comprises a first ventilation structure and a second ventilation structure, and the first ventilation structure and the second ventilation structure at least comprise an inner layer annular area and an outer layer annular area which correspond to each other; a plurality of evenly-distributed baffles are arranged in the inner-layer annular areas and the outer-layer annular areas of the first ventilation structure and the second ventilation structure correspondingly, and the second ventilation structure can rotate relative to the first ventilation structure so that the overlapping state of the baffles of the first ventilation structure and the baffles of the second ventilation structure can be changed. According to the gas adjusting device, the probability of uniform distribution of the gas before the gas enters the gas distribution plate of the atomic layer deposition equipment can be improved, so that the uniformity of a deposited film of the atomic layer deposition equipment is improved, and the performance of a semiconductor device is improved.

Description

Technical Field

[0001] The present invention belongs to the technical field of semiconductor manufacturing, and more specifically, relates to a gas regulation device and an atomic layer deposition device for an atomic layer deposition apparatus. Background Art

[0002] With the rapid development of the integrated circuit industry, the device size has gradually decreased, and the characteristic size of the integrated circuit line width is rapidly developing towards miniaturization. This puts higher requirements on semiconductor manufacturing processes and equipment, making the atomic layer deposition (ALD) technology, which has good uniformity, high conformality, and can precisely control the film thickness, widely concerned.

[0003] The ALD technology is mainly based on gas-phase reactions. By introducing different precursors separately, deposition is carried out layer by layer in the form of a single atomic layer film on the substrate surface, thereby achieving nanoscale controllable growth. Taking the production of an aluminum oxide film as an example, the deposition principle of the ALD technology is introduced as follows: (1) Use an inert gas to carry the precursor trimethylaluminum into the reaction chamber, and the precursor trimethylaluminum is chemically adsorbed on the active sites on the substrate surface through self-limiting; (2) Use an inert gas to blow out the excess precursor trimethylaluminum and reaction by-products from the reaction chamber; (3) Use an inert gas to carry the precursor water vapor into the reaction chamber, and the precursor water vapor reacts with the active groups formed by the adsorption of the precursor trimethylaluminum on the substrate surface to generate the target product; (4) Use an inert gas to blow out the excess precursor water vapor and reaction by-products from the reaction chamber.

[0004] In existing ALD devices, generally, the self-diffusion of gas is relied on to make the reactant precursor enter the showerhead. However, existing ALD devices cannot ensure the uniform distribution of gas before entering the showerhead, which will reduce the uniformity of the deposited film and affect the performance of semiconductor devices. Summary of the Invention

[0005] The purpose of the present invention is to provide a gas regulation device and an atomic layer deposition device for an atomic layer deposition apparatus. The gas regulation device for the atomic layer deposition apparatus can increase the probability of uniform distribution of gas before entering the gas distribution plate of the atomic layer deposition apparatus, thereby improving the uniformity of the film deposited by the atomic layer deposition apparatus and improving the performance of semiconductor devices.

[0006] To achieve the above object, the technical solution adopted by the present invention is: In the first aspect of the present invention, a gas regulation device for an atomic layer deposition apparatus is provided, including a gas supply assembly. The gas supply assembly includes a first gas supply structure and a second gas supply structure, and the first gas supply structure and the second gas supply structure are arranged in parallel along the gas flow direction; Both the first ventilation structure and the second ventilation structure at least include corresponding inner annular regions and outer annular regions. A plurality of uniformly distributed baffles are arranged in both the inner annular regions and the outer annular regions of the first ventilation structure and the second ventilation structure. The second ventilation structure can rotate relative to the first ventilation structure so as to change the overlapping state of the baffles of the first ventilation structure and the baffles of the second ventilation structure, and adjust the gas passing rate of each annular region.

[0007] In one embodiment, both the first ventilation structure and the second ventilation structure include a middle annular region disposed between the inner annular region and the outer annular region. A plurality of uniformly distributed baffles are arranged in the middle annular region.

[0008] In one embodiment, a driving assembly is further included. The driving assembly is used to control the second ventilation structure to rotate a preset angle.

[0009] In one embodiment, the driving assembly includes a driving structure and an output end connected to the driving structure. A first gear structure is arranged at the output end. The second ventilation structure includes a second gear structure meshing with the first gear structure.

[0010] In one embodiment, the baffle is a fan-shaped structure, and the preset angle is 0-90 degrees.

[0011] In one embodiment, the maximum gas passing rate of the inner annular region of the second ventilation structure is 50%, the maximum gas passing rate of the middle annular region of the second ventilation structure is 50%, and the maximum gas passing rate of the outer annular region of the second ventilation structure is 67%.

[0012] In one embodiment, the minimum gas passing rate of the inner annular region in the overlapping state is 25%, the minimum gas passing rate of the middle annular region in the overlapping state is 25%, and the minimum gas passing rate of the outer annular region in the overlapping state is 33%.

[0013] In one embodiment, the baffles in the inner annular region and the middle annular region of the first ventilation structure are 10-degree fan-shaped baffles spaced 30 degrees apart, and the baffles in the outer annular region of the first ventilation structure are 10-degree fan-shaped baffles spaced 20 degrees apart; The baffles in the inner annular region of the second ventilation structure are 20-degree fan-shaped baffles spaced 20 degrees apart, the baffles in the middle annular region of the second ventilation structure are 10-degree fan-shaped baffles spaced 10 degrees apart, and the baffles in the outer annular region of the second ventilation structure are 10-degree fan-shaped baffles spaced 20 degrees apart.

[0014] In one embodiment, the materials of the first ventilation structure and the second ventilation structure are aluminum alloy with surface anodization treatment or corrosion-resistant metal oxides.

[0015] The second aspect of the present invention provides an atomic layer deposition device, characterized in that it includes a reaction chamber and the gas regulation device for the atomic layer deposition device as described above. The reaction chamber includes an air inlet and a gas distribution plate, and the ventilation assembly is arranged between the air inlet of the reaction chamber and the gas distribution plate.

[0016] In one embodiment, the first ventilation structure and the second ventilation structure are connected by a connecting shaft, wherein one of the first ventilation structure and the second ventilation structure is fixed on the connecting shaft, and the other is rotatably connected to the connecting shaft.

[0017] In one embodiment, the reaction chamber includes a top cover, the air inlet is arranged on the top cover, the first ventilation structure is fixed on the top cover or the gas distribution plate, and the second ventilation structure is connected to the top cover or the gas distribution plate through a ball bearing.

[0018] In one embodiment, the gas distribution plate is a shower head, and there is a buffer chamber between the second ventilation structure and the shower head.

[0019] The gas regulation device for the atomic layer deposition device provided by the present invention includes a ventilation assembly. The ventilation assembly includes a first ventilation structure and a second ventilation structure. The first ventilation structure and the second ventilation structure are arranged in parallel along the gas flow direction. Both the first ventilation structure and the second ventilation structure at least include corresponding inner-layer annular regions and outer-layer annular regions. A plurality of uniformly distributed baffles are arranged in the inner-layer annular regions and the outer-layer annular regions of the first ventilation structure and the second ventilation structure. The second ventilation structure can rotate relative to the first ventilation structure so that the overlapping state of the baffles of the first ventilation structure and the baffles of the second ventilation structure changes, and the gas passing rate of each annular region is adjusted. By adjusting the overlapping state of the baffles of the first ventilation structure and the baffles of the second ventilation structure, this gas regulation device can realize the adjustment of the gas passing rate of the inner-layer annular region and the outer-layer annular region, improve the probability of uniform distribution of the gas before entering the gas distribution plate of the atomic layer deposition device, thereby improving the uniformity of the deposited thin film of the atomic layer deposition device and improving the performance of semiconductor devices.

[0020] The atomic layer deposition equipment provided by the present invention includes a reaction chamber and the gas regulating device for the atomic layer deposition equipment as described above. The reaction chamber includes an air inlet and a gas distribution plate. The ventilation assembly is arranged between the air inlet and the gas distribution plate of the reaction chamber. The second ventilation structure of the gas regulating device can rotate relative to the first ventilation structure. By adjusting the overlapping state of the baffle plates of the first ventilation structure and the second ventilation structure, the gas flow passing rates of the inner annular region and the outer annular region can be adjusted, the probability of uniform distribution of the reaction gas before entering the gas distribution plate of the atomic layer deposition equipment can be increased, thereby improving the uniformity of the thin film deposited by the atomic layer deposition equipment and improving the performance of semiconductor devices. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the following will briefly introduce the drawings required for use in the embodiments or the description of the prior art. Obviously, the following drawings are only some embodiments of the present invention. For those of ordinary skill in the art, other drawings can be obtained based on these drawings without creative efforts.

[0022] Figure 1 It is a physical diagram of the air outlet side of the shower head of the existing atomic layer deposition equipment machine. Figure 2 It is an exploded structural diagram of the first ventilation structure and the second ventilation structure of the gas regulating device for the atomic layer deposition equipment provided by the embodiment of the present invention. Figure 3 It is a top view structure diagram of the first ventilation structure and the second ventilation structure of the gas regulating device for the atomic layer deposition equipment provided by the embodiment of the present invention. Figure 4 It is a structural diagram of the atomic layer deposition equipment provided by the embodiment of the present invention. Figure 5 It is a top view of the first ventilation structure of the gas regulating device for the atomic layer deposition equipment provided by the embodiment of the present invention. Figure 6 It is a top view of the second ventilation structure of the gas regulating device for the atomic layer deposition equipment provided by the embodiment of the present invention. Figure 7a 、 Figure 7b It is a schematic diagram of the gas passing rate after the second ventilation structure of the gas regulating device for the atomic layer deposition equipment provided by the embodiment of the present invention rotates a certain angle relative to the first ventilation structure. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0023] To make the objectives, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Apparently, the described embodiments are some, but not all, of the embodiments of the present invention. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present invention without creative efforts shall fall within the protection scope of the present invention.

[0024] In the description of the present invention, it should be understood that the terms "including" and "having", and any variations thereof, are intended to cover non-exclusive inclusion. For example, a process, method, system, product or device that includes a series of steps or units does not necessarily limit to those clearly listed steps or units, but may include other steps or units not clearly listed or inherent to these processes, methods, products or devices.

[0025] It should be understood that the orientation or positional relationship indicated by the terms "length", "width", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc. is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus should not be construed as a limitation of the present invention.

[0026] In addition, the terms "first" and "second" are only used for descriptive purposes and cannot be construed as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features. Thus, features defined with "first" and "second" may explicitly or implicitly include one or more of such features. It should be understood that the term "and / or" used herein is only a description of the associated relationship of the associated objects, indicating that three relationships may exist. For example, A and / or B may represent: A exists alone, A and B exist simultaneously, and B exists alone. In the description of the present invention, unless otherwise specified, the meaning of "plurality" is two or more.

[0027] The inventor found that the connection between the top cover and the intake bridge of the reaction chamber of the existing atomic layer deposition equipment machine is a hexagonal honeycomb structure, and there is a cavity between the top cover and the showerhead. After the carrier gas and reaction gas of the top cover pass through the honeycomb structure and the cavity, they pass through the showerhead and enter the chamber. During this process, due to the existence of the honeycomb structure at the intake of the top cover, the gas will pass through the showerhead in a snowflake-like distribution (see Figure 1As shown by the blue coil, and the closer to the center of the showerhead, the more gas passes through. This uncontrollable and uneven gas flow distribution structure will have an adverse impact on the uniformity of the deposited film thickness during the reaction. The present invention aims to improve the gas flow distribution into the showerhead, achieve adjustable gas flow in different regions, and thus improve the uniformity and controllability of thin film deposition. Based on the above problems, this application provides a gas regulation device and an atomic layer deposition device for atomic layer deposition equipment.

[0028] The following will provide a detailed description of the gas regulation device and the atomic layer deposition device for atomic layer deposition equipment provided by the present invention in combination with specific embodiments.

[0029] Figure 2 It is an exploded schematic diagram of the first gas passage structure and the second gas passage structure of the gas regulation device for atomic layer deposition equipment provided by an embodiment of the present invention. Figure 3 It is a top view structure diagram of the first gas passage structure and the second gas passage structure of the gas regulation device for atomic layer deposition equipment provided by an embodiment of the present invention. Please refer to Figure 2 、 Figure 3 In the first aspect of this embodiment, a gas regulation device for atomic layer deposition equipment is provided, including a gas passage component 1. The gas passage component includes a first gas passage structure 11 and a second gas passage structure 12. The first gas passage structure 11 and the second gas passage structure 12 are arranged in parallel along the gas flow direction. Both the first gas passage structure 11 and the second gas passage structure 12 at least include corresponding inner annular regions A and outer annular regions C. A plurality of uniformly distributed baffles 13 are provided in the inner annular regions A and outer annular regions C of the first gas passage structure 11 and the second gas passage structure 12. The second gas passage structure 12 can rotate relative to the first gas passage structure 11 to change the overlapping state of the baffles 13 of the first gas passage structure 11 and the baffles 13 of the second gas passage structure 12, and adjust the gas passing rate of each annular region.

[0030] Atomic layer deposition technology is a self-limiting reaction deposition technology. By controlling the reaction conditions, various thin films or metal catalysts can be deposited, and the film thickness or the metal catalyst loading can be precisely regulated. Compared with traditional thin film deposition technologies, atomic layer deposition technology has the characteristics of surface self-limiting and self-saturation, excellent three-dimensional conformal properties, large area uniformity, film thickness control, and low-temperature growth. These characteristics make atomic layer deposition technology have broad application prospects in the fields of semiconductor sensors, anti-corrosion and anti-oxidation coatings, battery electrodes, and biomedicine. Atomic layer deposition equipment is equipment used for atomic layer deposition technology. Figure 4 It is a schematic diagram of the structure of the atomic layer deposition equipment provided by an embodiment of the present invention. Please refer to Figure 2 andFigure 4 , the atomic layer deposition equipment of this embodiment includes a reaction chamber 2. The reaction chamber 2 includes an air inlet 21 and a gas distribution plate 22. The ventilation component 1 is arranged between the air inlet 21 of the reaction chamber 2 and the gas distribution plate 22. The principle of atomic layer deposition technology is to alternately introduce two precursors into the reaction chamber 2 in the form of gas pulses. The two precursors are isolated by pumping with a vacuum pump or purging with an inert gas. The precursor molecules react by adsorbing on the surface of the sample to form a thin film or clusters.

[0031] Figure 5 It is a top view of the first ventilation structure of the gas regulation device for an atomic layer deposition equipment provided by an embodiment of the present invention. Figure 6 It is a top view of the second ventilation structure of the gas regulation device for an atomic layer deposition equipment provided by an embodiment of the present invention. Please refer to Figures 4 - 6 , the ventilation component 1 of this embodiment includes a first ventilation structure 11 and a second ventilation structure 12. The first ventilation structure 11 and the second ventilation structure 12 are arranged in parallel along the gas flow direction. The ventilation component 1 of this embodiment is arranged between the air inlet 21 of the reaction chamber and the gas distribution plate 22. The outer contours of the first ventilation structure 11 and the second ventilation structure 12 of this embodiment are both circular. The first ventilation structure 11 and the second ventilation structure 12 both at least include corresponding inner annular regions A and outer annular regions C. For example, the first ventilation structure 11 and the second ventilation structure 12 of this embodiment both include an inner annular region A, a middle annular region B, and an outer annular region C. The inner annular region A correspondingly covers the central region of the gas distribution plate 22. The middle annular region B correspondingly covers the middle annular transition region of the gas distribution plate 22. The outer annular region C correspondingly covers the edge region of the gas distribution plate 22. The first ventilation structure 11 and the second ventilation structure 12 of this embodiment both include three annular regions. Of course, in other embodiments, the first ventilation structure 11 and the second ventilation structure 12 may also include two annular regions or four annular regions. This embodiment does not particularly limit the specific materials and dimensions of the first ventilation structure 11 and the second ventilation structure 12. For example, those skilled in the art can preset the specific dimensions of the first ventilation structure 11 and the second ventilation structure 12 according to the actual situation.

[0032] Exemplarily, the first ventilation structure 11 of this embodiment is fixedly arranged, and the second ventilation structure 12 is rotatably arranged. Of course, in other embodiments, it may also be arranged that the first ventilation structure 11 is rotatably arranged and the second ventilation structure 12 is fixedly arranged. The flowing gas passes through the gaps between two adjacent baffles 13 of each layer of ventilation structure. The first ventilation structure 11 and the second ventilation structure 12 are stacked, and the gap between the two layers of ventilation structures can be ignored. Only when there are no baffles 13 at the corresponding positions of the two layers of ventilation structures can the flowing gas pass through. Take Figure 3Look down at the overlapping diagrams to judge the passage of flowing gas. In the overlapping diagrams, the void area of each region / the total area of the region is the flowing gas passing rate. Figure 7a and Figure 7b is a schematic diagram of the gas passing rate after the second gas passage structure of the gas regulating device for an atomic layer deposition apparatus provided by an embodiment of the present invention rotates a certain angle relative to the first gas passage structure. Please refer to Figure 7a and Figure 7b , by rotating the second gas passage structure 12, the gas passing rates of the inner annular region A, the middle annular region B, and the outer annular region C can be adjusted. For example, when the second gas passage structure 12 is rotated for adjustment in this embodiment, the highest gas passing rate of the inner annular region A and the middle annular region B of the second gas passage structure 12 is 50%, the lowest gas passing rate of the inner annular region A and the middle annular region B is 25%, the highest gas passing rate of the outer annular region C is 67%, and the lowest gas passing rate is 33%. In this embodiment, the gas passing rate of the outer annular region C is increased to make up for the defect that the flowing gas in the outer annular region C is less after the flowing gas enters from a small-diameter air inlet into a large-diameter one.

[0033] In the inner annular region A, the middle annular region, and the outer annular region C of the first gas passage structure 11 and the second gas passage structure 12 of this embodiment, a plurality of uniformly distributed baffles 13 are provided. The second gas passage structure 12 can rotate relative to the first gas passage structure 11 so that the overlapping state of the baffles 13 of the first gas passage structure 11 and the baffles 13 of the second gas passage structure 12 changes, and the gas passing rates of each annular region are adjusted. The second gas passage structure 12 of this embodiment can rotate relative to the first gas passage structure 11. By adjusting the relative angle between the first gas passage structure 11 and the second gas passage structure 12, the gas passing rates of the inner annular region A, the middle annular region B, and the outer annular region C can be separately changed. For example, the gas passing rate of the inner annular region A is reduced, the gas passing rate of the middle annular region B is reduced, the gas passing rate of the outer annular region C is increased, the probability of uniform distribution before the gas enters the gas distribution plate 22 is increased, and the adverse impact on the uniformity of the reaction-generated deposition film thickness caused by the uncontrollable and uneven structure of the existing flowing gas distribution is reduced, so that the uniformity of the deposited film thickness is improved.

[0034] The gas regulation device for an atomic layer deposition apparatus provided by the present invention includes a ventilation component. The ventilation component includes a first ventilation structure and a second ventilation structure. The first ventilation structure and the second ventilation structure are arranged in parallel along the gas flow direction. Both the first ventilation structure and the second ventilation structure at least include corresponding inner annular regions and outer annular regions. A plurality of uniformly distributed baffles are provided in the inner annular regions and the outer annular regions of the first ventilation structure and the second ventilation structure. The second ventilation structure can rotate relative to the first ventilation structure so that the overlapping state of the baffles of the first ventilation structure and the baffles of the second ventilation structure changes, thereby adjusting the gas passing rate of each annular region. By adjusting the overlapping state of the baffles of the first ventilation structure and the second ventilation structure, this gas regulation device can adjust the gas passing rate of the inner annular region and the outer annular region, increase the probability of uniform distribution of the gas before entering the gas distribution plate of the atomic layer deposition apparatus, thereby improving the uniformity of the deposited thin film of the atomic layer deposition apparatus and improving the performance of semiconductor devices.

[0035] Furthermore, the gas regulation device further includes a driving component. The driving component is used to control the second ventilation structure 12 to rotate a preset angle. In this embodiment, the driving component controls the second ventilation structure 12 to rotate a preset angle to adjust the gas passing rate at the gas outlet end of the second ventilation structure 12, and the degree of automation is high.

[0036] Specifically, the driving component of this embodiment includes a driving structure and an output end. A first gear structure is provided at the output end. The second ventilation structure 12 includes a second gear structure meshing with the first gear structure. Exemplarily, a second gear structure is provided at the end of the second ventilation structure 12 in this embodiment, and the second gear structure meshes with the first gear structure to drive the second ventilation structure 12 to rotate. The driving structure of this embodiment is used to control the second ventilation structure 12 to rotate a preset angle. This driving structure can be implemented by using existing control software to rotate a preset angle, and this embodiment will not elaborate on this.

[0037] Further, the baffle 13 is of a sector structure, and the preset angle is 0 - 90 degrees. The baffles 13 provided in the inner annular region A, the middle annular region B, and the outer annular region C of the first ventilation structure 11 and the second ventilation structure 12 in this embodiment are all sector - shaped baffles, and the manufacturing method is simple. This embodiment does not particularly limit the specific material of the sector - shaped baffle 13. For example, the material of the sector - shaped baffle 13 is aluminum alloy with surface anodizing treatment or corrosion - resistant metal oxide. Specifically, in this embodiment, the maximum gas passing rate of the inner annular region A of the second ventilation structure 12 is 50%, the maximum gas passing rate of the middle annular region B of the second ventilation structure 12 is 50%, and the maximum gas passing rate of the outer annular region C of the second ventilation structure 12 is 67%. In the overlapping state, the minimum gas passing rate of the inner annular region A is 25%, the minimum gas passing rate of the middle annular region B in the overlapping state is 25%, and the minimum gas passing rate of the outer annular region C in the overlapping state is 33%.

[0038] The preset angle for the driving component in this embodiment to control the rotation of the second ventilation structure 12 is 0 - 90 degrees. The second ventilation structure 12 in this embodiment can achieve the selection of independent high and low gas passing rates in the inner annular region A, the middle annular region B, and the outer annular region C within the rotation range of 0 degrees to 90 degrees. At the same time, the adjustment of the gas passing rate of 25% - 50% in the inner annular region A and the middle annular region B, and the adjustment of the gas passing rate of 33% - 67% in the outer annular region C can also be achieved by the rotation angle of the second ventilation structure 12 that is not an integer multiple of 10 degrees.

[0039] Specifically, please refer to Figure 5 and Figure 6, the baffles 13 in the inner annular region A and the middle annular region B of the first ventilation structure 11 are both 10-degree sector baffles 13 spaced 30 degrees apart, and the baffles 13 in the outer annular region C of the first ventilation structure 11 are 10-degree sector baffles 13 spaced 20 degrees apart; the baffles 13 in the inner annular region A of the second ventilation structure 12 are 20-degree sector baffles 13 spaced 20 degrees apart, the baffles 13 in the middle annular region B of the second ventilation structure 12 are 10-degree sector baffles 13 spaced 10 degrees apart, and the baffles 13 in the outer annular region C of the second ventilation structure 12 are 10-degree sector baffles 13 spaced 20 degrees apart. The first ventilation structure 11 and the second ventilation structure 12 of this embodiment are stacked. The inner annular region A of the first ventilation structure 11 is correspondingly arranged with the inner annular region A of the second ventilation structure 12, the middle annular region B of the first ventilation structure 11 is correspondingly arranged with the middle annular region B of the second ventilation structure 12, and the outer annular region C of the first ventilation structure 11 is correspondingly arranged with the outer annular region C of the second ventilation structure 12. The above settings of the baffles 13 in the inner annular region A, the middle annular region B, and the outer annular region C of the first ventilation structure 11 and the second ventilation structure 12 of this embodiment enable the second ventilation structure 12 to adjust the gas passing rate of 25% - 50% in the inner annular region A and the middle annular region B and the gas passing rate of 33% - 67% in the outer annular region C within a 90-degree rotation range. The setting method of the baffles 13 on the first ventilation structure 11 and the second ventilation structure 12 of this embodiment is simple and easy to operate.

[0040] Please refer to Figure 7a and 7b , in the initial state, that is, when the second ventilation structure 12 does not rotate relative to the first ventilation structure 11, the gas passing rates of the inner annular region A and the middle annular region B are 50%, and the gas passing rate of the outer annular region C is 67%; when the second ventilation structure 12 rotates 10° relative to the first ventilation structure 11, the gas passing rate of the inner annular region A is 50%, the gas passing rate of the middle annular region B is 25%, and the gas passing rate of the outer annular region C is 33%; when the second ventilation structure 12 rotates 20° relative to the first ventilation structure 11, the gas passing rate of the inner annular region A is 25%, the gas passing rate of the middle annular region B is 50%, and the gas passing rate of the outer annular region C is 33%. Among them, when the second ventilation structure 12 rotates 30°, 40°, 60°, 70°, 90° relative to the first ventilation structure 11, the top-view overlapping diagrams of the first ventilation structure 11 and the second ventilation structure 12, the gas passing rate of the inner annular region A, the gas passing rate of the middle annular region B, and the gas passing rate of the outer annular region C are shown in Figure 7, and this embodiment will not be elaborated.

[0041] Furthermore, the materials of the first ventilation structure 11 and the second ventilation structure 12 are aluminum alloy with surface anodic oxidation treatment or corrosion-resistant metal oxide. By anodic oxidation treatment, a denser oxide film can be formed on the surface of the aluminum alloy. This oxide film can effectively isolate the metal from the external corrosive environment. Especially in a humid or highly corrosive working environment, the aluminum alloy treated in this way has a longer service life. The first ventilation structure 11 and the second ventilation structure 12 of this embodiment are applied to an atomic layer deposition device, and using aluminum alloy with surface anodic oxidation treatment or corrosion-resistant metal oxide can improve the service life.

[0042] The gas regulation device for an atomic layer deposition device provided by an embodiment of the present invention includes a ventilation assembly. The ventilation assembly includes a first ventilation structure and a second ventilation structure. The first ventilation structure and the second ventilation structure are arranged in parallel along the gas flow direction. Both the first ventilation structure and the second ventilation structure at least include corresponding inner-layer annular regions and outer-layer annular regions. A plurality of evenly distributed baffles are arranged in the inner-layer annular regions and the outer-layer annular regions of the first ventilation structure and the second ventilation structure. The second ventilation structure can rotate relative to the first ventilation structure so that the overlapping state of the baffles of the first ventilation structure and the baffles of the second ventilation structure changes, thereby regulating the gas passing rate of each annular region. By adjusting the overlapping state of the baffles of the first ventilation structure and the second ventilation structure, this gas regulation device can adjust the gas passing rate of the inner-layer annular region and the outer-layer annular region, increase the probability of uniform distribution of the gas before entering the gas distribution plate of the atomic layer deposition device, so as to improve the uniformity of the deposited thin film of the atomic layer deposition device and improve the performance of semiconductor devices.

[0043] Please refer to Figure 2 - FIG. 7. A second aspect of this embodiment provides an atomic layer deposition device, which includes a reaction chamber 2 and the gas regulation device for an atomic layer deposition device as described above. The reaction chamber 2 includes an air inlet 21 and a gas distribution plate 22. The ventilation assembly 1 is arranged between the air inlet 21 of the reaction chamber 2 and the gas distribution plate 22.

[0044] The gas regulation device of this embodiment includes a ventilation assembly 1. The ventilation assembly 1 includes a first ventilation structure 11 and a second ventilation structure 12. The first ventilation structure 11 and the second ventilation structure 12 are arranged in parallel along the gas flow direction; The first ventilation structure 11 and the second ventilation structure 12 each at least include corresponding inner annular regions A and outer annular regions C. A plurality of uniformly distributed baffles 13 are provided in the inner annular regions A and the outer annular regions C of the first ventilation structure 11 and the second ventilation structure 12. The second ventilation structure 12 can rotate relative to the first ventilation structure 11 so as to change the overlapping state of the baffles 13 of the first ventilation structure 11 and the baffles 13 of the second ventilation structure 12, and adjust the gas passing rate of each annular region.

[0045] The reaction chamber 2 is the core component of the atomic layer deposition equipment, providing space for the deposition reaction. The reaction chamber 2 of this embodiment includes an air inlet 21 and a gas distribution plate 22. In atomic layer deposition, two precursors are alternately introduced into the reaction chamber 2 in the form of gas pulses, and the two precursors are isolated by pumping with a vacuum pump or purging with an inert gas. The precursor molecules react by adsorbing on the surface of the sample to form a thin film or clusters. The function of the gas distribution plate 22 is to uniformly spray the precursors on the surface of the substrate. Exemplarily, the gas distribution plate 22 of this embodiment is a shower head.

[0046] In the existing atomic layer deposition equipment, the self-diffusion of gas causes the reactant precursor to enter the showerhead. However, the existing atomic layer deposition equipment cannot ensure the uniform distribution of gas before entering the showerhead, which will reduce the uniformity of the deposited thin film and affect the device performance. The inventor found that the connection between the top cover of the reaction chamber of the existing atomic layer deposition equipment and the gas inlet bridge is a hexagonal honeycomb structure, and there is a cavity between the top cover and the showerhead. The carrier gas and reaction gas of the top cover pass through the honeycomb structure and the cavity, and then pass through the showerhead and enter the chamber. During this process, due to the existence of the honeycomb structure at the gas inlet of the top cover, the gas will pass through the showerhead in a snowflake-like distribution, and the closer to the center of the showerhead, the more gas passes through. This uncontrollable and non-uniform gas flow distribution structure will have an adverse effect on the uniformity of the reaction-generated deposition film thickness. The first ventilation structure 11 and the second ventilation structure 12 of this embodiment are stacked, and both include an inner annular region A, a middle annular region, and an outer annular region C. A plurality of uniformly distributed baffles 13 are provided in the inner annular region A, the middle annular region, and the outer annular region C. The second ventilation structure 12 can rotate relative to the first ventilation structure 11 to change the overlapping state of the baffles 13 of the first ventilation structure 11 and the baffles 13 of the second ventilation structure 12, and adjust the gas passing rate of each annular region. By adjusting the overlapping state of the baffles 13 on the first ventilation structure 11 and the second ventilation structure 12 in this embodiment, the gas passing rates of the inner annular region A, the middle annular region B, and the outer annular region C can be separately changed. For example, the gas passing rate of the inner annular region A is reduced, the gas passing rate of the middle annular region B is reduced, and the gas passing rate of the outer annular region C is increased, so as to increase the probability of uniform distribution of gas before entering the gas distribution plate 22, reduce the adverse effect of the uncontrollable and non-uniform existing gas flow distribution structure on the uniformity of the reaction-generated deposition film, improve the uniformity of the deposited film thickness, and improve the performance of semiconductor devices.

[0047] In a specific embodiment, the first ventilation structure 11 and the second ventilation structure 12 are connected by a connecting shaft, wherein one of the first ventilation structure 11 and the second ventilation structure 12 is fixed to the connecting shaft, and the other is rotatably connected to the connecting shaft. The first ventilation structure 11 and the second ventilation structure 12 of this embodiment are connected by a connecting shaft, and the manufacturing method is simple.

[0048] Optionally, the reaction chamber 2 includes a top cover 23. The gas inlet 21 is disposed on the top cover 23. The first ventilation structure 11 is fixed to the top cover 23 or the gas distribution plate 22, and the second ventilation structure 12 is connected to the top cover 23 or the gas distribution plate 22 through a ball bearing. Exemplarily, in this embodiment, both the first ventilation structure 11 and the second ventilation structure 12 are installed on the top cover 23, wherein the first ventilation structure 11 is fixedly connected to the top cover 23, and the second ventilation structure 12 is rotatably connected to the top cover 23 through a ball bearing. Alternatively, both the first ventilation structure 11 and the second ventilation structure 12 are installed on the gas distribution plate 22, wherein the first ventilation structure 11 is fixedly connected to the gas distribution plate 22, and the second ventilation structure 12 is rotatably connected to the gas distribution plate 22 through a ball bearing.

[0049] Specifically, the gas distribution plate 22 in this embodiment is a spray head, and there is a buffer chamber between the second ventilation structure 12 and the spray head. By providing a buffer chamber between the second ventilation structure 12 and the spray head in this embodiment, it is beneficial to the uniform distribution of gas within a certain space range, avoiding the blockage of gas flow through the through holes in the spray head area corresponding to the baffle 13, and further avoiding the problem of uneven film thickness of the same radius on the wafer during the deposition process.

[0050] The atomic layer deposition equipment provided by the embodiment of the present invention includes a reaction chamber and the gas regulating device for the atomic layer deposition equipment as described above. The reaction chamber includes a gas inlet and a gas distribution plate. The ventilation assembly is disposed between the gas inlet and the gas distribution plate of the reaction chamber. The second ventilation structure of the gas regulating device can rotate relative to the first ventilation structure. By adjusting the overlapping state of the baffle of the first ventilation structure and the baffle of the second ventilation structure, it is possible to adjust the gas flow passing rate of the inner annular region and the outer annular region, improve the probability of uniform distribution of the reaction gas before entering the gas distribution plate of the atomic layer deposition equipment, thereby improving the uniformity of the deposited film of the atomic layer deposition equipment and improving the performance of semiconductor devices.

[0051] In the above description, the descriptions referring to terms such as "one embodiment", "some embodiments", "example", "specific example", etc. mean that the specific features, structures, materials or characteristics described in connection with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in a suitable manner in any one or more embodiments or examples. In addition, without contradiction, those skilled in the art can combine and combine the different embodiments or examples described in this specification and the features of different embodiments or examples.

[0052] The above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it; although the present invention has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that: they can still modify the technical solutions described in the foregoing embodiments, or perform equivalent replacements on some or all of the technical features; and these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A gas regulation device for an atomic layer deposition equipment, characterized in that: It includes a ventilation component, and the ventilation component includes a first ventilation structure and a second ventilation structure, and the first ventilation structure and the second ventilation structure are arranged in parallel along the gas flow direction; Both the first ventilation structure and the second ventilation structure at least include corresponding inner annular regions and outer annular regions, and a plurality of uniformly distributed baffles are arranged in the inner annular regions and outer annular regions of the first ventilation structure and the second ventilation structure. The second ventilation structure can rotate relative to the first ventilation structure to change the overlapping state of the baffles of the first ventilation structure and the baffles of the second ventilation structure, and adjust the gas passing rate of each annular region.

2. The gas regulation device for an atomic layer deposition equipment according to claim 1, characterized in that: Both the first ventilation structure and the second ventilation structure include a middle annular region arranged between the inner annular region and the outer annular region, and a plurality of uniformly distributed baffles are arranged in the middle annular region.

3. The gas regulation device for an atomic layer deposition equipment according to claim 2, characterized in that: It further includes a driving component, and the driving component is used to control the second ventilation structure to rotate a preset angle.

4. The gas regulation device for an atomic layer deposition equipment according to claim 3, characterized in that: The driving component includes a driving structure and an output end connected to the driving structure. The output end is provided with a first gear structure, and the second ventilation structure includes a second gear structure meshing with the first gear structure.

5. The gas regulation device for an atomic layer deposition equipment according to claim 3, characterized in that: The baffle is a sector structure, and the preset angle is 0 - 90 degrees.

6. The gas regulation device for an atomic layer deposition apparatus according to claim 2, characterized in that: The maximum gas passing rate of the inner annular region in the overlapping state is 50%, the maximum gas passing rate of the middle annular region in the overlapping state is 50%, and the maximum gas passing rate of the outer annular region in the overlapping state is 67%.

7. The gas regulating device for an atomic layer deposition apparatus according to claim 2, wherein: The minimum gas passing rate of the inner annular region in the overlapping state is 25%, the minimum gas passing rate of the middle annular region in the overlapping state is 25%, and the minimum gas passing rate of the outer annular region in the overlapping state is 33%.

8. The gas regulation device for an atomic layer deposition equipment according to claim 7, characterized in that: The baffles in the inner annular region and the middle annular region of the first ventilation structure are 10-degree sector baffles spaced 30 degrees apart, and the baffles in the outer annular region of the first ventilation structure are 10-degree sector baffles spaced 20 degrees apart; The baffles in the inner annular region of the second ventilation structure are 20-degree sector baffles spaced 20 degrees apart, the baffles in the middle annular region of the second ventilation structure are 10-degree sector baffles spaced 10 degrees apart, and the baffles in the outer annular region of the second ventilation structure are 10-degree sector baffles spaced 20 degrees apart.

9. The gas regulating device for an atomic layer deposition apparatus according to any one of claims 1-8, characterized in that: The materials of the first ventilation structure and the second ventilation structure are aluminum alloy with surface anodic oxidation treatment or corrosion-resistant metal oxides.

10. An atomic layer deposition apparatus, characterized in that: Comprising a reaction chamber and the gas regulating device for an atomic layer deposition apparatus according to any one of claims 1-9, the reaction chamber includes an air inlet and a gas distribution plate, and the ventilation assembly is disposed between the air inlet of the reaction chamber and the gas distribution plate.

11. The atomic layer deposition apparatus according to claim 10, wherein: The first ventilation structure and the second ventilation structure are connected by a connecting shaft, wherein one of the first ventilation structure and the second ventilation structure is fixed to the connecting shaft, and the other is rotatably connected to the connecting shaft.

12. The atomic layer deposition apparatus according to claim 10, characterized in that: The reaction chamber includes a top cover, the air inlet is disposed on the top cover, the first ventilation structure is fixed on the top cover or the gas distribution plate, and the second ventilation structure is rotatably installed on the top cover or the gas distribution plate.

13. The atomic layer deposition apparatus according to claim 10, wherein: The gas distribution plate is a shower head, and there is a buffer chamber between the second ventilation structure and the shower head.

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