Flexible plasma-assisted atomic layer deposition device and method

Through flexible plasma-assisted atomic layer deposition devices and methods, CCEP mild plasma is used to reduce film damage, and the elastic limiting mechanism and transmission mechanism are optimized for disassembly and assembly of the rolling rollers, which solves the cumbersome problems of damage and disassembly and assembly of the existing devices, and improves the quality and processing efficiency of the two-dimensional boron nitride film.

CN120366745APending Publication Date: 2025-07-25XIAOKRLI (SUZHOU) SEMICONDUCTOR TECHNOLOGY CO LTD
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Patent Information

Application Number
CN202510740899.9
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2025-06-05
Publication Date
2025-07-25

AI Technical Summary

Technical Problem

The existing atomic layer deposition device is prone to damage the two-dimensional boron nitride film when plasma coating, and the disassembly and assembly steps of the winding roller are cumbersome, which affects the processing efficiency.

Method used

The flexible plasma assisted atomic layer deposition device is used to deposit using CCEP mild plasma, and the disassembly and assembly process of the winding roller is optimized through the elastic limiting mechanism and the transmission mechanism, and the cleaning and deposition are carried out in combination with the alternating use of inert gas.

Benefits of technology

It improves the gas source utilization rate, reduces film damage, simplifies the disassembly and assembly process of the winding roller, and improves the quality and processing efficiency of the two-dimensional boron nitride film.

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Abstract

The invention discloses a flexible plasma-assisted atomic layer deposition device and method, and relates to the technical field of two-dimensional boron nitride thin film strengthening machining.The flexible plasma-assisted atomic layer deposition device comprises an atomic layer deposition coating bin, a transmission mechanism and a gas injection mechanism, partition plates are symmetrically and fixedly installed in the atomic layer deposition coating bin, and through holes are formed in the upper sections of the partition plates; and first sealing doors are symmetrically installed on the front side and the rear side of the atomic layer deposition coating bin, a discharging assembly is rotationally installed in the atomic layer deposition coating bin, and meanwhile a collecting assembly is rotationally installed in the atomic layer deposition coating bin. According to the flexible plasma-assisted atomic layer deposition device and method, CCEP and the plasma are adopted for atomic deposition processing, and the CCEP and the plasma are flexible plasma, so that when the device is used for deposition processing, the utilization rate of an air source is increased, meanwhile, damage to a film is greatly reduced, and the deposition efficiency is improved. Therefore, the quality of the two-dimensional boron nitride film is improved.
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Description

Technical Field

[0001] The present invention relates to the technical field of two-dimensional boron nitride thin film strengthening processing, and specifically to a flexible plasma-assisted atomic layer deposition device and method. Background Art

[0002] Two-dimensional boron nitride is a material with unique physical and chemical properties and is widely used in the fields of electronics, optoelectronics, and nanotechnology. It is a single-atom layer structure formed by nitrogen and boron atoms through covalent bonds, similar to the layered structure of graphene. When processing two-dimensional boron nitride thin films, an atomic layer deposition device is needed to coat the thin films in order to improve the quality of the thin films. However, the current atomic layer deposition devices still have the following deficiencies:

[0003] The commonly used plasma in the existing atomic layer deposition devices during plasma coating is likely to cause certain damage to the two-dimensional boron nitride thin film, thus bringing certain interference to the subsequent processing and use of the thin film. At the same time, the disassembly and assembly steps of the winding roller of the existing atomic layer deposition device are relatively cumbersome, resulting in the need for staff to spend a long time when replacing the winding roller, thus bringing certain interference to the processing efficiency of the staff. Summary of the Invention

[0004] The purpose of the present invention is to provide a flexible plasma-assisted atomic layer deposition device and method to solve the problems raised in the above background art.

[0005] To achieve the above purpose, the present invention provides the following technical solution: A flexible plasma-assisted atomic layer deposition device, including an atomic layer deposition coating chamber, a transmission mechanism, and an air injection mechanism. Inside the atomic layer deposition coating chamber, partition plates are symmetrically and fixedly installed, and through holes are opened in the upper section of the partition plates. First sealing doors are symmetrically installed on the front and back sides of the atomic layer deposition coating chamber. A feeding component is rotatably installed inside the atomic layer deposition coating chamber, and a winding component is rotatably installed inside the atomic layer deposition coating chamber. The transmission mechanism is installed on the back of the atomic layer deposition coating chamber. Second sealing doors are symmetrically installed on the front side of the atomic layer deposition coating chamber. Inert gas storage chambers are symmetrically and fixedly installed on the back of the atomic layer deposition coating chamber. A first air extraction pump is fixedly installed on the top of the inert gas storage chamber. A connecting pipe is fixedly connected to the side of the first air extraction pump. The air injection mechanism is fixedly installed on the inner surface of the top of the atomic layer deposition coating chamber. A suction pipe is fixedly connected to the back of the atomic layer deposition coating chamber. A second air extraction pump is fixedly installed at the end of the suction pipe. The top of the second air extraction pump is fixedly connected to the bottom of the inert gas storage chamber. A flexible plasma atomic layer deposition system is fixedly installed on the inner surface of the top of the atomic layer deposition coating chamber.

[0006] Further, the material receiving component includes a connecting shaft, and an elastic limiting mechanism is installed inside the connecting shaft. The end of the elastic limiting mechanism is fixedly connected to a bearing column, and a limiting groove is formed at the end of the bearing column. At the same time, a bearing mechanism is movably installed at the end of the bearing column.

[0007] Further, the end of the elastic limiting mechanism is fixedly connected to the inner surface of the connecting shaft, and the other end of the elastic limiting mechanism is fixedly connected to the end of the bearing column. The bearing column and the connecting shaft form an elastic structure through the elastic limiting mechanism.

[0008] Further, the bearing mechanism includes a winding roller, and a fixing column is fixedly connected through the inside of the winding roller. Docking blocks are symmetrically and fixedly installed at both ends of the fixing column.

[0009] Further, the external dimension of the docking block is exactly the same as the internal dimension of the limiting groove, and the docking block and the bearing column form a clamping structure through the limiting groove.

[0010] Further, the transmission mechanism includes a driving motor, and a transmission shaft is installed on the output shaft of the driving motor through a coupling. A connecting gear is fixedly connected to the outer surface of the transmission shaft, and a transmission belt is meshed with the outer surface of the connecting gear.

[0011] Further, the number of the transmission shafts is two, and the ends of the two transmission shafts are respectively fixedly connected to the ends of the material feeding component and the material receiving component.

[0012] Further, the gas injection mechanism includes a hollow connecting plate, and connecting columns are symmetrically and fixedly installed at the top of the hollow connecting plate. Gas injection nozzles are symmetrically installed at the bottom of the hollow connecting plate. A three-way pipe is fixedly connected to the top of the hollow connecting plate. The other end of the three-way pipe is fixedly connected to the side of the first air extraction pump.

[0013] Further, the bottom of the connecting column is fixedly connected to the top of the hollow connecting plate, and the top of the connecting column is fixedly connected to the inner surface of the top of the atomic layer deposition coating chamber. The hollow connecting plate and the atomic layer deposition coating chamber form a fixed structure through the connecting column.

[0014] A flexible plasma-assisted atomic layer deposition method is applied to the flexible plasma-assisted atomic layer deposition device of any one of the above. The flexible plasma-assisted atomic layer deposition method includes the following steps:

[0015] S1. Loading process: The staff opens the first sealing door, then installs the feeding component carrying the two-dimensional boron nitride film to be film-coated into the interior of the atomic layer deposition coating chamber. Then, the two-dimensional boron nitride film passes through the through-hole and enters the film-coating chamber, and then passes through the partition plate on the right side and is fixed to the outer surface of the winding roller. When the two-dimensional boron nitride film is fixed, both the first sealing door and the second sealing door are closed, and the interior of the atomic layer deposition coating chamber is evacuated to a vacuum state;

[0016] S2. Film-coating process: Then, the staff remotely controls to turn on the flexible plasma atomic layer deposition system, so that the flexible plasma atomic layer deposition system automatically attaches the CCEP mild plasma to the surface of the two-dimensional boron nitride film during operation, thereby performing atomic layer deposition treatment on the two-dimensional boron nitride film;

[0017] S3. First cleaning: When the atomic deposition time of the two-dimensional boron nitride film in the chamber reaches the set value, the flexible plasma atomic layer deposition system is turned off, and the first air pump at the top of the left inert gas storage chamber is turned on. When the first air pump starts to operate, the inert gas in the inert gas storage chamber is transported into the interior of the hollow connecting plate through the cooperation of the connecting pipe and the three-way pipe, and then the inert gas is evenly ejected through the gas injection nozzle, so as to achieve the purpose of cleaning the chamber and removing the unreacted precursor molecules in the chamber;

[0018] S4. Second deposition: After the chamber is cleaned, the second air pump at the bottom of the corresponding inert gas storage chamber is turned on, so that the air extraction pipe extracts the inert gas in the atomic layer deposition coating chamber to ensure the cleanliness of the chamber. Then, the flexible plasma atomic layer deposition system is remotely turned on again for secondary deposition film-coating treatment;

[0019] S5. Second cleaning: When the atomic deposition time of the two-dimensional boron nitride film in the chamber reaches the set value, the flexible plasma atomic layer deposition system is turned off, and the first air pump at the top of the right inert gas storage chamber is turned on, so that the inert gas in the right inert gas storage chamber is injected into the interior of the atomic layer deposition coating chamber for secondary cleaning work, so as to achieve the purpose of removing the unreacted precursor molecules in the chamber, thereby achieving the purpose of depositing the film layer by layer;

[0020] S6. Roll-to-roll conveying: When the film-coating of the two-dimensional boron nitride film in the coating chamber is completed, the driving motor is turned on. When the driving motor starts to operate, through the mutual cooperation of the connecting gears and the transmission belt, the two transmission shafts drive the feeding component and the winding component to rotate synchronously in the atomic layer deposition coating chamber, so that the film-coated two-dimensional boron nitride film is automatically wound on the outer surface of the bearing mechanism. At the same time, the unprocessed two-dimensional boron nitride film is transported from the outer surface of the feeding component to the film-coating chamber for film-coating treatment, so as to achieve the purpose of intermittent processing;

[0021] S7. Unloading treatment: After all the two-dimensional boron nitride films are coated, the staff opens the first sealing door, then grabs the bearing mechanism and drives it to squeeze towards the connecting shaft at one end, so that the bearing column squeezes the elastic limiting mechanism to move towards the inside of the connecting shaft, and then the docking block at the other end moves out of the limiting groove at the end of the bearing column at the other end, so as to achieve the purpose of quickly disassembling the material receiving component. Similarly, when installing the material feeding component and the material receiving component, the installation work can be quickly completed by squeezing the bearing column at one end.

[0022] The present invention provides a flexible plasma-assisted atomic layer deposition device and method, having the following

[0023] Beneficial effects:

[0024] 1. The present invention uses CCEP mild plasma for atomic deposition processing. Since the CCEP mild plasma is flexible plasma, the device improves the utilization rate of the gas source during deposition processing, and at the same time greatly reduces the damage to the film, thereby improving the quality of the two-dimensional boron nitride film.

[0025] 2. Through the elastic limiting mechanism provided in the present invention, when the staff squeezes the bearing column at one end through the bearing mechanism, the bearing column can automatically move towards the inside of the connecting shaft, which provides convenience for the staff to snap the docking block at the other end. And because the external dimensions of the docking block are exactly the same as the internal dimensions of the limiting groove, it is convenient for the staff to quickly snap the docking block and the bearing column, thus providing convenience for the staff to disassemble and assemble the material receiving component. At the same time, since the components of the material feeding component and the material receiving component are the same, it is also convenient for the staff to quickly disassemble and assemble the material feeding component, thus avoiding the situation that the processing efficiency of the staff is interfered due to the long time required for replacing the winding roller.

[0026] 3. Through the connecting gears and transmission belts provided in the present invention, when the driving motor operates, it can drive the two transmission shafts to rotate synchronously, so that the material feeding component and the material receiving component can also move synchronously during operation, thus ensuring that the material feeding component and the material receiving component will not cause excessive pulling on the film during the roll-to-roll film transportation, so as to ensure that the film will not break during the film transportation of the material feeding component and the material receiving component. At the same time, the setting of the two groups of inert gas storage bins enables the inert gas in the inert gas storage bins to be used alternately, thus providing sufficient purification time for the inert gas in the inert gas storage bins, so as to ensure that the inert gas transported into the atomic layer deposition coating chamber does not carry precursor molecules, thus ensuring the cleaning effect of the inert gas on the chamber. Description of the Drawings

[0027] Figure 1 This is a front orthographic three-dimensional structural schematic diagram of a flexible plasma-assisted atomic layer deposition device and method of the present invention;

[0028] Figure 2 This is a rear orthographic three-dimensional structural schematic diagram of a flexible plasma-assisted atomic layer deposition device and method of the present invention;

[0029] Figure 3 This is for a flexible plasma-assisted atomic layer deposition device and method of the present invention Figure 2 magnified schematic diagram of the structure at A;

[0030] Figure 4 This is an open structural schematic diagram of the equipment of a flexible plasma-assisted atomic layer deposition device and method of the present invention;

[0031] Figure 5 This is a split three-dimensional structural schematic diagram of the connecting shaft-bearing mechanism of a flexible plasma-assisted atomic layer deposition device and method of the present invention;

[0032] Figure 6 This is a split three-dimensional structural schematic diagram of the hollow connecting plate-flexible plasma atomic layer deposition system of a flexible plasma-assisted atomic layer deposition device and method of the present invention;

[0033] Figure 7 This is a three-dimensional structural schematic diagram of the inert gas storage bin-first air pump of a flexible plasma-assisted atomic layer deposition device and method of the present invention.

[0034] In the figure: 1. Atomic layer deposition coating chamber; 2. Partition plate; 3. Through hole; 4. First sealing door; 5. Loading component; 6. Unloading component; 61. Connecting shaft; 62. Elastic limiting mechanism; 63. Bearing column; 64. Limiting groove; 65. Bearing mechanism; 651. Winding roller; 652. Fixed column; 653. Docking block; 7. Transmission mechanism; 71. Driving motor; 72. Transmission shaft; 73. Connecting gear; 74. Transmission belt; 8. Second sealing door; 9. Inert gas storage bin; 10. First air pump; 11. Connecting pipe; 12. Gas injection mechanism; 121. Hollow connecting plate; 122. Connecting column; 123. Gas injection nozzle; 124. Three-way pipe; 13. Second air pump; 14. Air extraction pipe; 15. Flexible plasma atomic layer deposition system. Detailed implementation manners

[0035] The following further describes in detail the implementation manners of the present invention in conjunction with the drawings and embodiments. The following embodiments are used to illustrate the present invention, but cannot be used to limit the scope of the present invention.

[0036] As Figures 1-7As shown in the figure, a flexible plasma-assisted atomic layer deposition device includes an atomic layer deposition coating chamber 1, a transmission mechanism 7, and a gas injection mechanism 12. A partition plate 2 is symmetrically and fixedly installed inside the atomic layer deposition coating chamber 1, and through holes 3 are provided in the upper section of the partition plate 2. First sealing doors 4 are symmetrically installed on the front and rear sides of the atomic layer deposition coating chamber 1. A material feeding component 5 is rotatably installed inside the atomic layer deposition coating chamber 1, and a material receiving component 6 is rotatably installed inside the atomic layer deposition coating chamber 1. The material receiving component 6 includes a connecting shaft 61, and an elastic limiting mechanism 62 is installed inside the connecting shaft 61. The end of the elastic limiting mechanism 62 is fixedly connected to a bearing column 63. The end of the elastic limiting mechanism 62 is fixedly connected to the inner surface of the connecting shaft 61, and the other end of the elastic limiting mechanism 62 is fixedly connected to the end of the bearing column 63. The bearing column 63 and the connecting shaft 61 form an elastic structure through the elastic limiting mechanism 62. By setting the bearing column 63 and the connecting shaft 61 into an elastic structure, when the staff squeezes one end of the bearing column 63 through the bearing mechanism 65, the bearing column 63 can automatically move towards the inside of the connecting shaft 61. A limiting groove 64 is provided at the end of the bearing column 63, and a bearing mechanism 65 is movably installed at the end of the bearing column 63. The bearing mechanism 65 includes a winding roller 651, and a fixing column 652 is fixedly connected through the inside of the winding roller 651. Docking blocks 653 are symmetrically and fixedly installed at both ends of the fixing column 652. The external dimensions of the docking blocks 653 are exactly the same as the internal dimensions of the limiting groove 64, and the docking blocks 653 form a clamping structure with the bearing column 63 through the limiting groove 64. By setting the docking blocks 653 and the bearing column 63 into a clamping structure, the docking blocks 653 are convenient to be clamped into the inside of the bearing column 63 to complete the rapid installation work. The transmission mechanism 7 is installed on the back of the atomic layer deposition coating chamber 1. The transmission mechanism 7 includes a driving motor 71, and a transmission shaft 72 is installed on the output shaft of the driving motor 71 through a coupling. The number of the transmission shafts 72 is two, and the ends of the two transmission shafts 72 are respectively fixedly connected to the ends of the material feeding component 5 and the material receiving component 6. A connecting gear 73 is fixedly connected to the outer surface of the transmission shaft 72, and a transmission belt 74 is meshed with the outer surface of the connecting gear 73. Second sealing doors 8 are symmetrically installed on the front side of the atomic layer deposition coating chamber 1. Inert gas storage chambers 9 are symmetrically and fixedly installed on the back of the atomic layer deposition coating chamber 1. A first air extraction pump 10 is fixedly installed on the top of the inert gas storage chamber 9. A connecting pipe 11 is fixedly connected to the side of the first air extraction pump 10. The gas injection mechanism 12 is fixedly installed on the inner surface of the top of the atomic layer deposition coating chamber 1. The gas injection mechanism 12 includes a hollow connecting plate 121, and connecting columns 122 are symmetrically and fixedly installed on the top of the hollow connecting plate 121. The bottom of the connecting column 122 is fixedly connected to the top of the hollow connecting plate 121, and the top of the connecting column 122 is fixedly connected to the inner surface of the top of the atomic layer deposition coating chamber 1.Moreover, the hollow connecting plate 121 is fixedly connected to the atomic layer deposition coating chamber 1 through the connecting column 122. By providing the hollow connecting plate 121 and the atomic layer deposition coating chamber 1 as a fixed structure, the hollow connecting plate 121 will not become loose when carrying inert gas. The bottom of the hollow connecting plate 121 is symmetrically installed with gas injection nozzles 123. The top of the hollow connecting plate 121 is fixedly connected to a three-way pipe 124. The other end of the three-way pipe 124 is fixedly connected to the side of the first air pump 10. The back of the atomic layer deposition coating chamber 1 is fixedly connected to an air extraction pipe 14. The end of the air extraction pipe 14 is fixedly installed with a second air pump 13. The top of the second air pump 13 is fixedly connected to the bottom of the inert gas storage chamber 9. The inner surface of the top of the atomic layer deposition coating chamber 1 is fixedly installed with a flexible plasma atomic layer deposition system 15.,

[0037] A flexible plasma-assisted atomic layer deposition method is applied to the above flexible plasma-assisted atomic layer deposition device. The flexible plasma-assisted atomic layer deposition method includes the following steps:

[0038] S1. Loading process: The staff opens the first sealing door 4, then installs the feeding component 5 carrying the two-dimensional boron nitride film to be coated into the interior of the atomic layer deposition coating chamber 1. Then, the two-dimensional boron nitride film passes through the through hole 3 and enters the coating chamber, and then passes through the partition plate 2 on the right side and is fixed to the outer surface of the winding roller 651. When the two-dimensional boron nitride film is fixed, both the first sealing door 4 and the second sealing door 8 are closed, and the interior of the atomic layer deposition coating chamber 1 is evacuated to a vacuum state;

[0039] S2. Coating process: Then, the staff remotely controls to turn on the flexible plasma atomic layer deposition system 15, so that the flexible plasma atomic layer deposition system 15 automatically attaches the CCEP mild plasma to the surface of the two-dimensional boron nitride film during operation, thereby performing atomic layer deposition treatment on the two-dimensional boron nitride film;

[0040] S3. Primary cleaning: When the atomic deposition time of the two-dimensional boron nitride film in the chamber reaches the set value, the flexible plasma atomic layer deposition system 15 is turned off and the first air pump 10 at the top of the left inert gas storage chamber 9 is turned on. When the first air pump 10 starts to operate, the inert gas in the inert gas storage chamber 9 is transported into the interior of the hollow connecting plate 121 through the cooperation of the connecting pipe 11 and the three-way pipe 124. Then, the inert gas is evenly ejected through the gas injection nozzles 123, so as to achieve the purpose of cleaning the chamber and remove the unreacted precursor molecules in the chamber;

[0041] S4. Secondary deposition: After the cleaning inside the chamber is completed, turn on the second air extraction pump 13 at the bottom of the corresponding inert gas storage chamber 9 to enable the air extraction pipe 14 to extract the inert gas inside the atomic layer deposition coating chamber 1, so as to ensure the cleanliness of the chamber. Then remotely turn on the flexible plasma atomic layer deposition system 15 again to perform secondary deposition and coating treatment;

[0042] S5. Secondary cleaning: When the atomic deposition time of the two-dimensional boron nitride film inside the chamber reaches the set value, turn off the flexible plasma atomic layer deposition system 15 and turn on the first air extraction pump 10 at the top of the right inert gas storage chamber 9, so that the inert gas inside the right inert gas storage chamber 9 is injected into the inside of the atomic layer deposition coating chamber 1 for secondary cleaning work, so as to achieve the purpose of removing the unreacted precursor molecules inside the chamber, and thus achieve the purpose of depositing the film layer by layer;

[0043] S6. Roll-to-roll transportation: After the coating of the two-dimensional boron nitride film inside the coating chamber is completed, turn on the drive motor 71. When the drive motor 71 starts to operate, through the mutual cooperation of the connecting gear 73 and the transmission belt 74, the two drive shafts 72 drive the unwinding assembly 5 and the winding assembly 6 to rotate synchronously inside the atomic layer deposition coating chamber 1, so that the coated two-dimensional boron nitride film is automatically wound on the outer surface of the bearing mechanism 65. At the same time, the unprocessed two-dimensional boron nitride film is transported from the outer surface of the unwinding assembly 5 into the coating chamber for coating treatment, so as to achieve the purpose of intermittent processing;

[0044] S7. Unloading treatment: When all the two-dimensional boron nitride films are coated, the staff opens the first sealing door 4, then grabs the bearing mechanism 65 and drives it to squeeze towards the connecting shaft 61 at one end, so that the bearing column 63 squeezes the elastic limit mechanism 62 to move towards the inside of the connecting shaft 61, and then the docking block 653 at the other end moves out of the limit groove 64 at the end of the bearing column 63 at the other end, so as to achieve the purpose of quickly disassembling the winding assembly 6. Similarly, when installing the unwinding assembly 5 and the winding assembly 6, the installation work can be quickly completed by squeezing the bearing column 63 at one end.

[0045] The embodiments of the present invention are given for the purposes of illustration and description, and are not exhaustive or limit the present invention to the disclosed form. Many modifications and variations are obvious to those of ordinary skill in the art. The embodiments are chosen and described in order to better explain the principles of the present invention and its practical applications, and to enable those of ordinary skill in the art to understand the present invention and thus design various embodiments with various modifications suitable for specific purposes.

Claims

1. A flexible plasma-assisted atomic layer deposition device, comprising an atomic layer deposition coating chamber (1), a transmission mechanism (7) and a gas injection mechanism (12), characterized in that, Inside the atomic layer deposition coating chamber (1), a partition plate (2) is symmetrically and fixedly installed. A through hole (3) is provided in the upper section of the partition plate (2). First sealing doors (4) are symmetrically installed on the front and rear sides of the atomic layer deposition coating chamber (1). A material feeding component (5) is rotatably installed inside the atomic layer deposition coating chamber (1). At the same time, a material receiving component (6) is rotatably installed inside the atomic layer deposition coating chamber (1). The transmission mechanism (7) is installed on the back of the atomic layer deposition coating chamber (1). Second sealing doors (8) are symmetrically installed on the front side of the atomic layer deposition coating chamber (1). Inert gas storage chambers (9) are symmetrically and fixedly installed on the back of the atomic layer deposition coating chamber (1). A first air extraction pump (10) is fixedly installed on the top of the inert gas storage chamber (9). A connecting pipe (11) is fixedly connected to the side of the first air extraction pump (10). The gas injection mechanism (12) is fixedly installed on the inner surface of the top of the atomic layer deposition coating chamber (1). A suction pipe (14) is fixedly connected to the back of the atomic layer deposition coating chamber (1). A second air extraction pump (13) is fixedly installed at the end of the suction pipe (14). The top of the second air extraction pump (13) is fixedly connected to the bottom of the inert gas storage chamber (9). A flexible plasma atomic layer deposition system (15) is fixedly installed on the inner surface of the top of the atomic layer deposition coating chamber (1).

2. A flexible plasma-assisted atomic layer deposition apparatus according to claim 1, wherein, The material receiving component (6) includes a connecting shaft (61). An elastic limiting mechanism (62) is installed inside the connecting shaft (61). The end of the elastic limiting mechanism (62) is fixedly connected to a bearing column (63). A limiting groove (64) is provided at the end of the bearing column (63). A bearing mechanism (65) is movably installed at the end of the bearing column (63).

3. A flexible plasma-assisted atomic layer deposition apparatus according to claim 2, characterized in that, The end of the elastic limiting mechanism (62) is fixedly connected to the inner surface of the connecting shaft (61). The other end of the elastic limiting mechanism (62) is fixedly connected to the end of the bearing column (63). The bearing column (63) forms an elastic structure with the connecting shaft (61) through the elastic limiting mechanism (62).

4. A flexible plasma-assisted atomic layer deposition apparatus according to claim 2, wherein The bearing mechanism (65) includes a winding roller (651). A fixing column (652) is fixedly connected through the inside of the winding roller (651). Docking blocks (653) are symmetrically and fixedly installed at both ends of the fixing column (652).

5. A flexible plasma-assisted atomic layer deposition apparatus according to claim 4, characterized in that, The external dimensions of the docking block (653) are exactly the same as the internal dimensions of the limiting groove (64). The docking block (653) forms a clamping structure with the bearing column (63) through the limiting groove (64).

6. A flexible plasma-assisted atomic layer deposition device according to claim 1, characterized in that, The transmission mechanism (7) includes a driving motor (71). The output shaft of the driving motor (71) is installed with a transmission shaft (72) through a coupling. A connecting gear (73) is fixedly connected to the outer surface of the transmission shaft (72). A transmission belt (74) is meshed and connected to the outer surface of the connecting gear (73).

7. A flexible plasma-assisted atomic layer deposition apparatus according to claim 6, wherein The number of the transmission shafts (72) is two. The ends of the two transmission shafts (72) are respectively fixedly connected to the ends of the material feeding component (5) and the material receiving component (6).

8. A flexible plasma-assisted atomic layer deposition apparatus according to claim 1, wherein, The gas injection mechanism (12) includes a hollow connecting plate (121), and connecting columns (122) are symmetrically and fixedly installed at the top of the hollow connecting plate (121). Gas injection nozzles (123) are symmetrically installed at the bottom of the hollow connecting plate (121). A tee pipe (124) is fixedly connected to the top of the hollow connecting plate (121). At the same time, the other end of the tee pipe (124) is fixedly connected to the side of the first air extraction pump (10).

9. A flexible plasma-assisted atomic layer deposition apparatus according to claim 8, characterized in that, The bottom of the connecting column (122) is fixedly connected to the top of the hollow connecting plate (121), and the top of the connecting column (122) is fixedly connected to the inner surface of the top of the atomic layer deposition coating chamber (1). The hollow connecting plate (121) and the atomic layer deposition coating chamber (1) form a fixed structure through the connecting column (122).

10. A flexible plasma-assisted atomic layer deposition method, applied to the flexible plasma-assisted atomic layer deposition device according to any one of claims 1-9, characterized in that, The flexible plasma-assisted atomic layer deposition method includes the following steps: S1. Loading process: The staff opens the first sealing door (4), then installs the feeding component (5) carrying the two-dimensional boron nitride film to be coated into the atomic layer deposition coating chamber (1). Then the two-dimensional boron nitride film passes through the through hole (3) and enters the coating chamber, and then passes through the partition plate (2) on the right side and is fixed to the outer surface of the winding roller (651). When the two-dimensional boron nitride film is fixed, both the first sealing door (4) and the second sealing door (8) are closed, and the inside of the atomic layer deposition coating chamber (1) is pumped to a vacuum state; S2. Coating process: Then the staff remotely controls to turn on the flexible plasma atomic layer deposition system (15), so that the flexible plasma atomic layer deposition system (15) automatically attaches the CCEP mild plasma to the surface of the two-dimensional boron nitride film during operation, thereby performing atomic layer deposition treatment on the two-dimensional boron nitride film; S3. Primary cleaning: When the atomic deposition time of the two-dimensional boron nitride film in the chamber reaches the set value, the flexible plasma atomic layer deposition system (15) is turned off, and the first air extraction pump (10) at the top of the left inert gas storage chamber (9) is turned on. When the first air extraction pump (10) starts to operate, the inert gas in the inert gas storage chamber (9) is transported into the inside of the hollow connecting plate (121) through the cooperation of the connecting pipe (11) and the tee pipe (124). Then the inert gas is evenly ejected through the gas injection nozzles (123), so as to achieve the purpose of cleaning the inside of the chamber, thereby removing the unreacted precursor molecules in the chamber; S4. Secondary deposition: When the inside of the chamber is cleaned, the second air extraction pump (13) at the bottom of the corresponding inert gas storage chamber (9) is turned on, so that the air extraction pipe (14) extracts the inert gas in the atomic layer deposition coating chamber (1) to ensure the cleanliness of the inside of the chamber. Then the flexible plasma atomic layer deposition system (15) is remotely turned on for the second time to perform secondary deposition coating treatment; S5. Secondary cleaning: When the atomic deposition time of the two-dimensional boron nitride thin film in the chamber reaches the set value, the flexible plasma atomic layer deposition system (15) is turned off and the first air extraction pump (10) at the top of the right inert gas storage chamber (9) is turned on, so that the inert gas in the right inert gas storage chamber (9) is injected into the interior of the atomic layer deposition coating chamber (1) for secondary cleaning work, so as to achieve the purpose of removing the unreacted precursor molecules in the chamber, and thus achieve the purpose of depositing the thin film layer by layer; S6. Roll-to-roll conveying: When the coating of the two-dimensional boron nitride thin film in the coating chamber is completed, the drive motor (71) is turned on. When the drive motor (71) starts to run, through the mutual cooperation of the connecting gear (73) and the transmission belt (74), the two drive shafts (72) drive the unwinding assembly (5) and the winding assembly (6) to rotate synchronously inside the atomic layer deposition coating chamber (1), so that the coated two-dimensional boron nitride thin film is automatically wound on the outer surface of the bearing mechanism (65). At the same time, the unprocessed two-dimensional boron nitride thin film is conveyed from the outer surface of the unwinding assembly (5) into the coating chamber for coating treatment, so as to achieve the purpose of intermittent processing; S7. Unloading treatment: When all the two-dimensional boron nitride thin films are coated, the staff opens the first sealing door (4), then grabs the bearing mechanism (65) and drives it to squeeze towards the connecting shaft (61) at one end, so that the bearing column (63) squeezes the elastic limiting mechanism (62) to move towards the inside of the connecting shaft (61), and then the docking block (653) at the other end moves out of the limiting groove (64) at the end of the bearing column (63) at the other end, so as to achieve the purpose of quickly disassembling the winding assembly (6). Similarly, when installing the unwinding assembly (5) and the winding assembly (6), the installation work can be quickly completed by squeezing the bearing column (63) at one end.

Citation Information

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