Thin film deposition apparatus and thin film deposition method

Abstract

The thin film deposition device comprises a heating mechanism, a guide ring, an insulating ring, a lifting mechanism, a rotating mechanism and a controller, the heating mechanism comprises a heating tray and is used for bearing and heating a substrate, and the lifting mechanism is used for driving the heating tray and the guide ring to ascend so as to perform first thin film deposition; the rotating mechanism is used for driving the heating tray to drive the guide ring to rotate so that the guide ring can be placed on the insulating ring, the lifting mechanism is used for driving the heating tray to descend so that the heating tray can be separated from the guide ring, the rotating mechanism is used for driving the heating tray to rotate, and the lifting mechanism is used for driving the heating tray to ascend so that secondary thin film deposition can be conducted. And the relative positions of the substrate and the heating tray are different during the second thin film deposition and the first thin film deposition. Only one-stage lifting mechanism and one-stage rotating mechanism are arranged, rotation of the heating tray and relative rotation of the substrate and the heating tray are achieved, the uniformity of thin film deposition is improved, and the structure is simple.

Description

Technical Field

[0001] The present application relates to the field of semiconductor manufacturing equipment, and particularly to a thin film deposition device and a thin film deposition method. Background Art

[0002] In a plasma enhanced chemical vapor deposition (PECVD) device, the process is to deposit various dielectric thin films on the surface of a substrate. The thickness uniformity of the thin film is one of the key parameters of the process, directly affecting the thin film characteristics and product yield. To meet the continuous pursuit of the current semiconductor industry for high quality, high efficiency, low cost, and adaptation to large-size substrate processes, it is particularly important to improve the uniformity of thin film deposition on the substrate.

[0003] During the process of thin film deposition, the substrate is placed on a heating tray. If the heating tray can rotate around the central axis and the relative rotation between the substrate and the heating tray can be achieved, so as to obtain the average effect of the temperature and plasma of thin film deposition in the circumferential direction of the substrate, thereby the differences in thin film deposition caused by the local differences at each part inside the process chamber can be eliminated. The rotation operation of the substrate is a relatively effective method to improve the uniformity of thin film deposition on the substrate.

[0004] Existing thin film deposition equipment can achieve two-stage lifting motion, including a first-stage lifting mechanism, a second-stage lifting mechanism, and a rotating mechanism. The first-stage lifting mechanism is used to synchronously lift the second-stage lifting mechanism and the rotating mechanism to the process position for thin film deposition on the substrate. The second-stage lifting mechanism is used to separate the substrate and the heating tray. Then the rotating mechanism is used to drive the substrate to rotate a preset angle, and then thin film deposition is carried out to compensate for the non-uniformity of the thickness of the thin film deposited on the substrate. However, such a structure is relatively complex, with high costs, and the control logic is also relatively complex. Summary of the Invention

[0005] The purpose of the present application is to provide a thin film deposition device and a thin film deposition method, which can optimize the uniformity problem caused by the thickness deviation of the thin film.

[0006] To achieve the above purpose and other related purposes, the present application provides a thin film deposition device, including: A heating mechanism, including a heating tray, for carrying and heating the substrate; A guiding ring, arranged around the heating tray. The outer edge of the guiding ring is provided with a plurality of uniformly distributed protrusions, and the inner diameter of the guiding ring is smaller than the diameter of the substrate; An insulating ring, concentrically arranged above the guiding ring. The inner edge of the insulating ring is provided with a plurality of uniformly distributed bosses. A notch is formed between two adjacent bosses, and the notch is used for the protrusions of the guiding ring to pass through, and the bosses are used for supporting the protrusions; A lifting mechanism, connected to the heating mechanism, for driving the heating tray to lift; A rotating mechanism, connected to the heating mechanism, for driving the heating tray to rotate; and A controller, configured to: control the lifting mechanism to drive the heating tray and the guide ring to rise synchronously until the protrusion passes through the notch to reach the process position, and perform the first thin film deposition on the substrate carried on the heating tray; control the rotating mechanism to drive the heating tray and the guide ring to rotate a preset angle, so that the protrusion of the guide ring is placed on the convex platform of the insulating ring; and control the lifting mechanism to drive the heating tray to descend so that the substrate is separated from the heating tray, and control the rotating mechanism to drive the heating tray to rotate back the preset angle; control the lifting mechanism to drive the heating tray to rise to the process position again and carry the substrate again, and perform the second thin film deposition on the substrate carried on the heating tray, wherein the relative position of the substrate and the heating tray is different during the second thin film deposition from that during the first thin film deposition.

[0007] Further, the number of the convex platforms is the same as that of the protrusions.

[0008] Further, the heating mechanism further includes a rotating shaft, the first end of the rotating shaft is arranged on the heating tray, and the second end of the rotating shaft is connected to the lifting mechanism.

[0009] Further, the lifting mechanism includes a first support plate, a second support plate and a telescopic power part, the power part is connected between the first support plate and the second support plate, and the power part is used for making the first support plate and the second support plate move relatively in the vertical direction.

[0010] Further, an edge of the heating tray has a sunken part for placing the guide ring, and the height difference between the center of the heating tray and the sunken part is the same as the thickness of the guide ring.

[0011] Further, it further includes a process chamber, and the heating mechanism, the guide ring and the insulating ring are all arranged in the process chamber.

[0012] Further, it further includes a shower head for supplying process gas to the process chamber; the shower head is arranged on the top wall of the process chamber, and the insulating ring is arranged below the shower head.

[0013] Further, the length of the convex platform is less than or equal to the length of the protrusion.

[0014] Further, the controller is further configured to: before the first film deposition, control the rotating mechanism to drive the heating tray and the guiding ring to rotate a first preset angle, so that the protrusion of the guiding ring is placed on the boss of the insulating ring, and the first preset angle is the initial deviation angle between the protrusion and the boss.

[0015] Further, the controller is further configured to: after multiple depositions are completed, control the rotating mechanism to drive the heating tray and the guiding ring back to the process position, so that the guiding ring and the insulating ring are separated, and then control the lifting mechanism to drive the heating tray and the guiding ring to descend through the notch.

[0016] The present application also provides a film deposition method, including the following steps: S11: Place the substrate in the process chamber, drive the heating tray to drive the substrate to rise to the process position, and the protrusion on the outer edge of the guiding ring passes through the notch between the bosses on the inner edge of the insulating ring to reach the process position during the rising process of the substrate; S12: Perform the first film deposition on the surface of the substrate; S13: The heating tray drives the guiding ring and the substrate to rotate a preset angle, so that the protrusion on the outer edge of the guiding ring is placed on the boss on the inner edge of the insulating ring; S14: Drive the heating tray to descend, so that the substrate is separated from the heating tray; after the heating tray rotates a preset angle, drive the heating tray to rise to the process position to perform the second film deposition; and S15: Repeat steps S13 to S14 to perform multiple film depositions on the substrate.

[0017] Further, the length of the boss is greater than the length of the protrusion.

[0018] Further, the preset angle is not a multiple or factor of 360° / N, and the number of depositions × the preset angle = 360°, where N is the number of the protrusions.

[0019] Further, the length of the boss is less than or equal to the length of the protrusion.

[0020] Further, before step S12, it further includes: the heating tray drives the guiding ring and the substrate to rotate a first preset angle, so that the protrusion on the outer edge of the guiding ring is placed on the boss on the inner edge of the insulating ring, and the first preset angle is the deviation angle between the protrusion and the boss at the process position.

[0021] Further, the preset angle is 360° / N, where N is the number of the protrusions.

[0022] Further, after the step S15, the method further includes: driving the heating tray to drive the guiding ring back to the process position, separating the guiding ring from the insulating ring, and then driving the heating tray to descend to drive the guiding ring and the substrate back to the initial position.

[0023] As described above, the present application provides a thin film deposition device, which has the following beneficial effects: only one-level lifting mechanism and rotating mechanism are provided, which can not only realize the self-rotation of the heating tray along the central axis, but also realize the relative rotation of the substrate and the heating tray, so as to obtain the average effects of the temperature of thin film deposition and plasma in the circumferential direction of the substrate. Thus, the differences in thin film deposition caused by the differences in local conditions at each part inside the process chamber can be eliminated, and the uniformity of thin film deposition is improved. Moreover, the thin film deposition device provided by the present application has a low cost, a simple structure and a simple control logic. Description of the Drawings

[0024] Figure 1 It shows a schematic structural diagram of the thin film deposition device in the embodiment of the present application; Figure 2 It shows another schematic structural diagram of the thin film deposition device in the embodiment of the present application; Figure 3 It shows a schematic diagram of the thin film deposition device in the embodiment of the present application; Figure 4 and Figure 5 respectively show schematic diagrams before and after the guiding ring is placed on the insulating ring in the embodiment of the present application; Figure 6 and Figure 7 respectively show another schematic diagrams before and after the guiding ring is placed on the insulating ring in the embodiment of the present application; Figure 8 and Figure 9 respectively show still another schematic diagrams before and after the guiding ring is placed on the insulating ring in the embodiment of the present application. Detailed Embodiments

[0025] The following uses specific specific examples to illustrate the implementation manners of the present application. Those skilled in the art can easily understand other advantages and effects of the present application from the content disclosed in this specification. The present application can also be implemented or applied through other different specific implementation manners, and various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of the present application.

[0026] It should be noted that the illustrations provided in this embodiment only schematically illustrate the basic concept of the present application. Although only the components related to the present application are shown in the illustrations, rather than being drawn according to the number, shape, and size of the components in actual implementation, the form, quantity, and proportion of each component in actual implementation can be arbitrarily changed, and the component layout form may also be more complex. In addition, the parts with the same reference numerals shown in multiple drawings represent the same or equivalent parts or components.

[0027] As Figures 1 to 3 shown, this embodiment provides a thin film deposition apparatus, including: a process chamber 1, a heating mechanism 2, a guiding ring 3, a shower head 4, an insulating ring 5, a lifting mechanism 6, a rotating mechanism 7, and a controller; the heating mechanism 2, the guiding ring 3, the shower head 4, and the insulating ring 5 are all arranged in the process chamber 1. The controller is connected to the lifting mechanism 6 and the rotating mechanism 7. The lifting mechanism 6 is used to drive the heating mechanism 2 to move up and down, and the rotating mechanism 7 is used to drive the heating mechanism 2 to rotate.

[0028] The heating mechanism 2 includes a heating tray 21 and a rotating shaft 22. The heating tray 21 is used to carry and heat a substrate w. The rotating shaft 22 extends downward from the heating tray 21 and stably supports the heating tray 21. The first end (the upper end in the figure) of the rotating shaft 22 is arranged on the heating tray 21 to support the heating tray 21, and the second end extends downward through the process chamber 1. Inside the process chamber 1, there are a counterweight plate 11, a thimble 12, and a support column 13. The bottoms of multiple thimbles 12 (3 are shown in the figure) are arranged on the counterweight plate 11. The counterweight plate 11 is lapped on the support column 13 by gravity, and the support column 13 is fixed to the bottom of the process chamber 1. Multiple thimbles 12 are used to support the substrate w. The heating tray 21 is provided with receiving holes, and the thimbles 12 pass through the receiving holes and can move up and down relative to the receiving holes.

[0029] Refer to Figure 3 , the guiding ring 3 is arranged around the heating tray 21 and is lapped on the heating tray 21 by gravity. When the heating tray 21 and the substrate w are separated, the guiding ring 3 is used to support the substrate w. The edge of the heating tray 21 has a sunken part 211. The height difference between the center of the heating tray 21 and the sunken part 211 at the edge is the same as the thickness of the guiding ring 3. After the guiding ring 3 is placed on the sunken part 211, the upper surface of the guiding ring 3 and the upper surface of the heating tray 21 are flush.

[0030] Refer to Figure 1 and Figure 3, the spray head 4 is fixed on the top wall of the process chamber 1 and is used to supply process gas into the process chamber 1. The insulating ring 5 is fixed below the spray head 4 and is concentrically arranged with the guiding ring 3. The inner edge of the insulating ring 5 has a plurality of evenly distributed bosses 51. Correspondingly, the outer edge of the guiding ring 3 is also provided with the same number of evenly distributed protrusions 31. The protrusions 31 of the guiding ring 3 are used to overlap on the bosses 51 of the insulating ring 5. In other embodiments, the number of bosses 51 can also be greater than the number of protrusions 31. A notch is formed between two adjacent bosses 51 of the insulating ring 5, and the protrusion 31 on the guiding ring 3 passes through this notch. The length of the boss 51 on the insulating ring 5 can be greater than, equal to, or less than the length of the protrusion 31 on the guiding ring 3, as long as the protrusion 31 on the guiding ring 3 can be placed on the boss 51 of the insulating ring 5. Here, "length" refers to the length of the protrusion 31 (or boss 51) along the circumferential direction of the guiding ring 3 (or insulating ring 5). When the guiding ring 3 rises with the heating tray 21, the guiding ring 3 passes through the insulating ring 5, and the protrusion 31 on the guiding ring 3 passes through the notch; when the guiding ring 3 is in the process position, the lower surface of the protrusion 31 of the guiding ring 3 is slightly higher than the upper surface of the boss 51 of the insulating ring 5. Rotate the heating tray 21 to drive the guiding ring 3 to rotate to adjust the relative position of the protrusion 31 and the notch, and drive the heating tray 21 to descend so that the protrusion 31 of the guiding ring 3 can be placed on the boss 51 of the insulating ring 5.

[0031] The number of the protrusions 31 is at least two, Figure 4 and Figure 5 in the illustrated embodiment, the number of both the protrusions 31 and the bosses 51 is three, and the lengths of the protrusions 31 and the bosses 51 in the circumferential direction are equal; Figure 6 and Figure 7 in the illustrated embodiment, the number of both the protrusions 31 and the bosses 51 is three, the length of the boss 51 is longer, and the notch formed between two adjacent bosses 51 can accommodate the protrusion 31 to pass through; Figure 8 and Figure 9 in the illustrated embodiment, the number of both the protrusions 31 and the bosses 51 is four.

[0032] The lifting mechanism 6 bears the heating mechanism 2 and the guiding ring 3 and is used to drive the heating mechanism 2, the guiding ring 3, and the substrate w to lift and lower synchronously. During the rising process, the heating tray 21 and the guiding ring 3 rise accordingly and the height reaches the top of the ejector pin 12. The heating tray 21 drives the counterweight plate 11 and the ejector pin 12 to rise, and the counterweight plate 11 and the support column 13 are separated. The ejector pin 12 is light in mass and is completely retracted into the receiving hole by relying on the weight of the counterweight plate 11. The heating tray 21 and the guiding ring 3 bear the substrate w, ensuring that the upper surface of the heating tray 21 in contact with the substrate w is flat so that the heating tray 21 can heat the substrate w.

[0033] As Figure 1 and Figure 2As shown in the figure, the lifting mechanism 6 includes a first support plate 61, a second support plate 62 and a power unit 63. The power unit 63 is connected between the first support plate 61 and the second support plate 62 so that the first support plate 61 and the second support plate 62 can move relative to each other in the vertical direction. The power unit 63 is connected to the controller. In some embodiments, the power unit 63 can be an electric cylinder. For example, when the power unit 63 extends, it drives the second support plate 62 to move downward, and when the power unit 63 contracts, it drives the second support plate 62 to move upward. The first support plate 61 is fixedly connected to the bottom of the process chamber 1, and the second support plate 62 is fixedly connected to the rotating shaft 22 of the heating mechanism 2. The rotating shaft 22 passes through the first support plate 61 and the second support plate 62. By driving the second support plate 62 to lift through the power unit 63, the heating mechanism 2 is driven to lift. Preferably, three power units 63 are selected so that the first support plate 61 and the second support plate 62 are evenly stressed.

[0034] The rotating mechanism 7 is connected to the rotating shaft 22 of the heating mechanism 2 and is used to drive the heating tray 21 and the substrate w to rotate a preset angle. In some embodiments, the rotating mechanism 7 adopts a structure of a motor and a magnetic fluid.

[0035] The following refers to Figures 1 to 3 Describe the working process of the thin film deposition apparatus.

[0036] The chamber door 14 of the process chamber 1 is opened, and a manipulator (not shown in the figure) holds the substrate w and enters the process chamber 1 through the chamber door 14 and places the substrate w on the ejector pin 12. At this time, the lifting mechanism 6 has not yet worked, and the heating tray 21 and the guide ring 3 are both in their initial positions. The guide ring 3 is lapped on the sunken part 211 at the edge of the heating tray 21. The heating tray 21 and the guide ring 3 have the same height. The ejector pin 12 passes through the receiving hole of the heating tray 21 and extends out to receive the substrate w.

[0037] The lifting mechanism 6 works, driving the heating tray 21 and the guide ring 3 to rise together, so that the guide ring 3 passes through the insulating ring 5 and rises to the process position. At this process position, both the guide ring 3 and the heating tray 21 carry the substrate w. The heating tray 21 heats the substrate w, and the heating tray 21 transfers part of the heat to the guide ring 3 by heat conduction. The edge of the substrate w carried by the guide ring 3 is also heated. Then, the plasma gas is deposited on the substrate w to complete the first thin film deposition of the substrate w.

[0038] The heating tray 21 drives the substrate w to rotate by a preset angle, so that the protrusion 31 on the outer edge of the guiding ring 3 is lapped on the boss 51 on the inner edge of the insulating ring 5. The lifting mechanism 6 drives the heating tray 21 to descend to the initial position. Since the guiding ring 3 is lapped on the insulating ring 5, the heating tray 21 is separated from the substrate w, and the substrate w is supported solely by the guiding ring 3. Then the rotating mechanism 7 works, drives the heating tray 21 to rotate by a preset angle, and then drives the heating tray 21 to rise to the process position through the lifting mechanism 6. The guiding ring 3 is lapped on the heating tray 21, so that the substrate w is placed on the heating tray 21. At this time, there is an angular difference between the substrate w and the heating tray 21, and the second thin film deposition is performed on the substrate w.

[0039] According to the deposition condition of the substrate w, the steps of the second thin film deposition can be repeated to perform multiple depositions on the substrate w. In a more preferred embodiment, the number of depositions of the substrate w × the preset angle = 360°. After the substrate w is subjected to multiple depositions, the heating tray 21 drives the substrate w to rotate by a preset angle and return to the process position before the first thin film deposition, that is, the position where the lifting mechanism 6 first drives the heating tray 21 and the guiding ring 3 to rise together, so that the protrusion 31 of the guiding ring 3 can pass downward through the gap between the bosses 51 of the insulating ring 5, and the lifting mechanism 6 drives the heating tray 21 to drive the guiding ring 3 and the substrate w to descend to the initial position synchronously.

[0040] In another embodiment, as Figure 4 shown, when the length of the boss 51 is less than or equal to the length of the protrusion 31, before the first thin film deposition, the rotating mechanism 7 drives the heating tray 21 and the guiding ring 3 to rotate by a first preset angle, so that the protrusion 31 of the guiding ring 3 is placed on the boss 51 of the insulating ring 5, and the first preset angle is the initial deviation angle between the protrusion 31 and the boss 51. Figure 4 shows the relative positions of the guiding ring 3 and the insulating ring 5 when the guiding ring 3 rises to the process position. At this time, the deviation angle between the protrusion 31 and the boss 51 is α, which is the initial deviation angle.

[0041] The thin film deposition device further includes a radio frequency generator, and the radio frequency generator is connected to the controller. The radio frequency generator has an on state and an off state, and the controller is used to control the radio frequency generator to be periodically turned on and off. When the radio frequency generator is in the on state, the process gas inside the process chamber is excited to dissociate into plasma gas, and the plasma gas performs thin film deposition on the substrate.

[0042] This embodiment also proposes a thin film deposition method, including the following steps: S11: Place the substrate in the process chamber, drive the heating tray to drive the substrate to rise to the process position, and the protrusion on the outer edge of the guiding ring passes through the gap between the bosses on the inner edge of the insulating ring during the rising process of the substrate to reach the process position; S12: Perform the first film deposition on the substrate surface; S13: The heating tray drives the guide ring and the substrate to rotate a preset angle so that the protrusions on the outer edge of the guide ring are placed on the protrusions on the inner edge of the insulating ring; S14: Drive the heating tray to descend so that the substrate is separated from the heating tray; after the heating tray descends to the initial position, it rotates a preset angle, and then drives the heating tray to rise to the process position. At this time, an angle difference is formed between the substrate and the heating tray for the second film deposition; S15: Repeat steps S13 to S14 to perform multiple film depositions on the substrate.

[0043] The above steps S11 to S15 are applicable to the case where the length of the protrusion 51 of the insulating ring 5 is much greater than the length of the protrusion 31 of the guide ring 3, and the length of the gap between the protrusions 51 is slightly greater than the length of the protrusion 31. For example, Figure 6 in the shown embodiment, the number of protrusions 31 of the guide ring 3 is 3, and the gap between two protrusions 51 just allows the protrusion 31 to pass through. In step S13, it is necessary to ensure that the preset angle is not a multiple or factor of 360° / N, where N is the number of protrusions 31 of the guide ring 3, and the number of substrate depositions × the preset angle = 360°. For example, Figure 6 in the shown embodiment, the preset angle can be set to 45° or 90°. Therefore, during the multiple film deposition process, the protrusion 31 of the guide ring 3 can be placed on the protrusion 51 of the insulating ring 5, and after multiple rotations, the guide ring 3 can return to the process position before the first film deposition, and the protrusion 31 passes through the gap between the protrusions 51, so that the guide ring 3 is separated from the insulating ring 5. In the actual process, the number of depositions and rotations is determined according to the film deposition situation on the substrate surface. After completing multiple depositions in step S15, the heating tray 21 drives the guide ring 3 and the substrate w to rotate a preset angle again to make the guide ring 3 return to the process position in step S11. At this time, the protrusion 31 on the outer edge of the guide ring 3 can pass downward through the gap between the protrusions 51 of the insulating ring 5, and then drive the heating tray 21 to descend to drive the guide ring 3 and the substrate w back to the initial position.

[0044] This embodiment also proposes a film deposition method, including the following steps: S21: Place the substrate in the process chamber, and drive the heating tray to drive the substrate to rise to the process position. During the rising process of the substrate, the protrusion on the outer edge of the guide ring passes through the gap between the protrusions on the inner edge of the insulating ring; S22: The heating tray drives the guide ring and the substrate to rotate the first preset angle so that the protrusion on the outer edge of the guide ring is placed on the protrusion on the inner edge of the insulating ring; S23: Perform the first film deposition on the substrate surface; S24: The heating tray drives the substrate to rotate by a second preset angle, so that the protrusion on the outer edge of the guiding ring is still placed on the boss on the inner edge of the insulating ring; S25: Drive the heating tray to descend so that the substrate is separated from the heating tray; after the heating tray descends to the initial position, rotate by the second preset angle, and drive the heating tray to rise to the process position. At this time, an angular difference is formed between the substrate and the heating tray for the second thin film deposition; S26: Repeat steps S24 to S25 to perform multiple thin film depositions on the substrate.

[0045] The above steps S21 to S26 are applicable to the case where the length of the boss of the insulating ring is equal to or less than the length of the protrusion of the guiding ring, as Figure 4 shown. In step S23, the first preset angle is the deviation angle α between the protrusion 31 and the boss 51. In step S24, the second preset angle is 360° / N, where N is the number of protrusions 31 on the outer edge of the guiding ring 3. For example, Figure 4 in the second preset angle is 120°. In the actual process, the number of depositions and rotations is determined according to the thin film deposition situation on the substrate surface. After multiple depositions are completed in step S26, drive the heating tray 21 to drive the guiding ring 3 and the substrate w to rotate to the initial angle, so that the guiding ring 3 returns to the process position in step S21. At this time, the protrusion 31 on the outer edge of the guiding ring 3 can pass downward through the gap between the bosses 51 on the inner edge of the insulating ring 5, and then drive the heating tray 21 to descend to drive the guiding ring 3 and the substrate w back to the initial position. For example, after the Nth thin film deposition, the rotation angle of the heating tray 21 driving the guiding ring 3 and the substrate w is the difference between the second preset angle and the first preset angle, so that the protrusion 31 of the guiding ring 3 cannot be placed on the boss 51 of the insulating ring 5, and then drive the heating tray 21 to descend to drive the guiding ring 3 and the substrate w back to the initial position.

[0046] The above embodiments only exemplarily illustrate the principles and effects of the present application, rather than limiting the present application. Any person familiar with this technology can modify or change the above embodiments without departing from the spirit and scope of the present application. Therefore, all equivalent modifications or changes completed by those with ordinary knowledge in the technical field without departing from the spirit and technical idea disclosed by the present application should still be covered by the present application.

Claims

1. A thin film deposition device, characterized in that, Including: A heating mechanism, including a heating tray for carrying and heating a substrate; A guiding ring disposed around the heating tray, with a plurality of uniformly distributed protrusions on the outer edge of the guiding ring, and the inner diameter of the guiding ring being smaller than the diameter of the substrate; An insulating ring concentrically disposed above the guiding ring, with a plurality of uniformly distributed bosses on the inner edge of the insulating ring, a gap being formed between two adjacent bosses for the protrusions of the guiding ring to pass through, and the bosses for supporting the protrusions; A lifting mechanism connected to the heating mechanism for driving the heating tray to lift; A rotating mechanism connected to the heating mechanism for driving the heating tray to rotate; And A controller configured to: control the lifting mechanism to drive the heating tray and the guiding ring to synchronously rise until the protrusions pass through the gaps to reach the process position, and perform the first thin film deposition on the substrate carried on the heating tray; control the rotating mechanism to drive the heating tray and the guiding ring to rotate a preset angle so that the protrusions of the guiding ring are placed on the bosses of the insulating ring; and control the lifting mechanism to drive the heating tray to descend so that the substrate is separated from the heating tray, and control the rotating mechanism to drive the heating tray to rotate back the preset angle; control the lifting mechanism to drive the heating tray to rise again to the process position and carry the substrate again, and perform the second thin film deposition on the substrate carried on the heating tray, wherein the relative position between the substrate and the heating tray is different during the second thin film deposition from that during the first thin film deposition.

2. The thin film deposition apparatus according to claim 1, wherein The number of the bosses is the same as that of the protrusions.

3. The thin film deposition apparatus according to claim 1, characterized in that, The heating mechanism further includes a rotating shaft, with the first end of the rotating shaft disposed on the heating tray and the second end of the rotating shaft connected to the lifting mechanism.

4. The thin film deposition apparatus according to claim 1, wherein The lifting mechanism includes a first support plate, a second support plate, and a telescopic power part connected between the first support plate and the second support plate, and the power part is used to make the first support plate and the second support plate move relatively in the vertical direction.

5. The thin film deposition apparatus according to claim 1, wherein The edge of the heating tray has a sunken part for placing the guiding ring, and the height difference between the center of the heating tray and the sunken part is the same as the thickness of the guiding ring.

6. The thin film deposition apparatus according to claim 1, wherein It further includes a process chamber, and the heating mechanism, the guiding ring, and the insulating ring are all disposed in the process chamber.

7. The thin film deposition apparatus according to claim 6, wherein, It further includes a shower head for supplying process gas to the process chamber; the shower head is disposed on the top wall of the process chamber, and the insulating ring is disposed below the shower head.

8. The thin film deposition apparatus according to claim 1, wherein, The length of the bosses is less than or equal to the length of the protrusions.

9. The thin film deposition apparatus according to claim 8, wherein, The controller is further configured to: before performing the first thin film deposition, control the rotating mechanism to drive the heating tray and the guiding ring to rotate a first preset angle so that the protrusions of the guiding ring are placed on the bosses of the insulating ring, and the first preset angle is the initial deviation angle between the protrusions and the bosses.

10. The thin film deposition apparatus according to claim 1, wherein, The controller is further configured to: after multiple depositions are completed, control the rotating mechanism to drive the heating tray and the guiding ring back to the process position, so that the guiding ring and the insulating ring are separated, and then control the lifting mechanism to drive the heating tray and the guiding ring to descend through the notch.

11. A thin film deposition method, characterized in that, including the following steps: S11: Place the substrate in the process chamber, drive the heating tray to drive the substrate to rise to the process position. During the rising process of the substrate, the protrusions on the outer edge of the guiding ring pass through the notch between the bosses on the inner edge of the insulating ring to reach the process position; S12: Perform the first thin film deposition on the surface of the substrate; S13: The heating tray drives the guiding ring and the substrate to rotate a preset angle, so that the protrusions on the outer edge of the guiding ring are placed on the bosses on the inner edge of the insulating ring; S14: Drive the heating tray to descend, so that the substrate is separated from the heating tray; after the heating tray rotates a preset angle, drive the heating tray to rise to the process position to perform the second thin film deposition; and S15: Repeat steps S13 to S14 to perform multiple thin film depositions on the substrate.

12. The thin film deposition method according to claim 11, wherein The length of the boss is greater than the length of the protrusion.

13. The thin film deposition method according to claim 12, characterized in that, The preset angle is not a multiple or factor of 360° / N, and the number of depositions × the preset angle = 360°, where N is the number of the protrusions.

14. The thin film deposition method according to claim 11, characterized in that, The length of the boss is less than or equal to the length of the protrusion.

15. The thin film deposition method according to claim 14, characterized in that, Before the step S12, it further includes: the heating tray drives the guiding ring and the substrate to rotate a first preset angle, so that the protrusions on the outer edge of the guiding ring are placed on the bosses on the inner edge of the insulating ring, and the first preset angle is the deviation angle between the protrusion and the boss at the process position.

16. The thin film deposition method according to claim 15, wherein The preset angle is 360° / N, where N is the number of the protrusions.

17. The thin film deposition method according to claim 11, characterized in that, After the step S15, it further includes: drive the heating tray to drive the guiding ring back to the process position, so that the guiding ring and the insulating ring are separated, and then drive the heating tray to descend to drive the guiding ring and the substrate back to the initial position.

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