Far-end temperature sensing chip with temperature sensing precision compensation

Abstract

The invention provides a far-end temperature sensing chip with temperature sensing precision compensation, which comprises a compensation structure, a biasing circuit, a reference voltage, an oscillator, an analog-to-digital converter and a digital processing module, and is characterized in that the digital processing module comprises a control logic unit; wherein the compensation structure is respectively connected with the biasing circuit and the analog-to-digital converter, and the analog-to-digital converter is respectively connected with the oscillator, the reference voltage and the digital processing module; and the far-end temperature sensing chip is in sampling differential connection with the far-end temperature sensing triode through the compensation structure so as to realize differential sampling of the far-end temperature sensing triode.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor chips, and particularly to a remote temperature sensing chip with temperature sensing accuracy compensation. Background Art

[0002] Remote temperature sensing chips have the advantages of multi-channel, easy system integration, and digitization, and are widely used in application scenarios such as industrial Internet of Things, wireless sensor networks, and thermal management of electronic systems. They can monitor the temperature of key devices in the system, such as graphics processing unit (GPU), field programmable gate array (FPGA), and central processing unit (CPU), and can also monitor the ambient temperature and package housing temperature of key devices to ensure that the system can operate stably within the expected temperature range.

[0003] Nowadays, with the increasing requirements for data accuracy and stability in various industries, the demand for high-precision temperature measurement (error less than ±0.5 °C in the range of -55 °C to 125 °C) is becoming more and more urgent. In order to improve the temperature measurement accuracy, the existing remote temperature sensing chip structure usually adopts parasitic resistance elimination and ideality factor η correction technology to improve the remote temperature measurement accuracy. Among them, the ideality factor η correction technology only roughly attributes the influence of non-ideal factors of the remote temperature sensing triode to a product coefficient (ideality factor η), and adjusts the ideality factor η to adjust the slope of the temperature value D temp However, this compensation method is not accurate and has limited improvement in remote temperature measurement accuracy, making it difficult to meet the requirements of high-precision temperature measurement. Summary of the Invention

[0004] In view of the above deficiencies, the present invention provides a remote temperature sensing chip with temperature sensing accuracy compensation, including a compensation structure, a bias circuit, a reference voltage, an oscillator, an analog-to-digital converter, and a digital processing module. The digital processing module includes a control logic unit. Among them, the compensation structure is respectively connected to the bias circuit and the analog-to-digital converter, and the analog-to-digital converter is respectively connected to the oscillator, the reference voltage, and the digital processing module. The remote temperature sensing chip is connected to the remote temperature sensing triode in a sampling differential manner through the compensation structure to realize differential sampling of the remote temperature sensing triode.

[0005] In the above solution, the compensation structure includes a parasitic resistance elimination circuit, a non-ideality compensation circuit for I C -V BE and a non-ideality and Early effect compensation circuit for I E -V BE .

[0006] In the above solution, the bias circuit is a controllable current source circuit, and the bias circuit provides a bias current for the remote temperature sensing triode by being connected to the compensation structure.

[0007] In the above solution, the analog-to-digital converter is a Σ-Δ analog-to-digital converter and adopts a switched-capacitor structure; the analog-to-digital converter includes a first-stage integrator, a second-stage integrator and a comparator, wherein the amplifier of the first-stage integrator is a gain-enhanced folded cascode amplifier, and the amplifier of the second-stage integrator adopts a common folded cascode amplifier.

[0008] In the above solution, the oscillator is a low-temperature-drift structure oscillator, and the oscillator provides a low-temperature-drift clock for the analog-to-digital converter and the control logic unit respectively.

[0009] In the above solution, the reference voltage is a low-temperature-drift bandgap reference voltage, and the reference voltage provides a reference voltage for the analog-to-digital converter.

[0010] In the above solution, the digital processing module performs decimation filtering operation on the bit stream output by the analog-to-digital converter and outputs the target temperature value; and the digital processing module is used to calculate the compensation factor according to the compensation structure and calibrate the remote temperature reading.

[0011] In the above solution, the control logic unit is used to control the bias circuit to provide different ratios of bias current to the remote temperature-sensing triode.

[0012] In the above solution, when there is a parasitic resistance affecting sampling in the remote temperature-sensing triode, the compensation structure switches to a parasitic resistance elimination circuit.

[0013] In the above solution, when there is an influence of saturation current in the remote temperature-sensing triode, the compensation structure switches to an I C -V BE non-ideality compensation circuit. Brief Description of the Drawings

[0014] Figure 1 Schematically shows the working principle diagram of a traditional remote temperature sensing chip according to an embodiment of the present invention;

[0015] Figure 2 Schematically shows the structural diagram of a remote temperature sensing chip with temperature sensing accuracy compensation according to an embodiment of the present invention;

[0016] Figure 3 Schematically shows the schematic diagram of a parasitic resistance elimination circuit according to an embodiment of the present invention;

[0017] Figure 4 Schematically shows the schematic diagram of an IC-VBE non-ideality compensation circuit according to an embodiment of the present invention;

[0018] Figure 5 Schematically shows the schematic diagram of an IE-VBE non-ideality and Early effect compensation circuit according to an embodiment of the present invention.

[0019] Description of the Attached Drawing Reference Signs

[0020] 1 - Compensation structure; 2 - Bias circuit; 3 - Reference voltage; 4 - Oscillator; 5 - Analog - to - digital converter; 6 - Digital processing module; 7 - Control logic unit; 8 - Remote temperature - sensing triode. Detailed Implementation Manner

[0021] To make the objectives, technical solutions, and advantages of the present invention clearer and more understandable, the following further describes the present invention in detail with reference to specific embodiments and the attached drawings.

[0022] Before describing the remote - end temperature - sensing chip with temperature - sensing accuracy compensation in the embodiments of the present invention, the working principle of the traditional remote - end temperature - sensing chip is first described in detail.

[0023] Figure 1 Schematically shows the working principle diagram of the traditional remote - end temperature - sensing chip according to the embodiments of the present invention.

[0024] As Figure 1 shown, the traditional remote - end temperature - sensing chip is connected to the remote temperature - sensing triode through leads (the remote temperature - sensing triode can be either a discrete triode or a parasitic triode in an FPGA or a CPU). Based on the exponential relationship between the base - emitter voltage (V BE ) and the collector current (I C ) of the bipolar transistor, as follows:

[0025] (1)

[0026] Where k is the Boltzmann constant, q is the electric charge quantity, T is the absolute temperature, I C is the collector current of the triode, and I S is the reverse saturation current of the triode.

[0027] Apply currents with a ratio of N:1 to the remote temperature - sensing triode twice continuously, and subtract the two generated V BE to obtain the base - emitter voltage difference (ΔV BE ) as:

[0028] (2)

[0029] It can be seen from formula (2) that ΔV BE is proportional to the absolute temperature. The remote - end temperature - sensing chip uses an analog - to - digital converter (ADC) with a reference voltage V REF as a reference to digitally convert the ΔV BE signal into a linearized output μ

[0030] (3)

[0031] where α is the gain factor, and the selected value makes V BE and αΔV BE have temperature coefficients of equal magnitude but opposite signs:

[0032] (4)

[0033] Finally, multiply by the slope value A, add the offset value B, to obtain the decimal temperature value D temp

[0034] (5)

[0035] Due to the non - idealities of I C -V BE in the remote temperature - sensing triode, the non - idealities of I E -V BE in the remote temperature - sensing triode, the Early effect, and the base - region resistance, these non - ideal factors will introduce error terms in formula (1), causing the actually generated V BE by the remote temperature - sensing triode at different bias currents to deviate from the theoretically calculated value, thereby affecting the accuracy of ΔV BE and resulting in a decrease in the remote temperature - sensing accuracy.

[0036] Figure 2 Schematically shows a structural diagram of a remote temperature - sensing chip with temperature - sensing accuracy compensation according to an embodiment of the present invention.

[0037] As Figure 2 shown, in an embodiment of the present invention, a remote temperature - sensing chip with temperature - sensing accuracy compensation is proposed, including: a compensation structure 1, a bias circuit 2, a reference voltage 3, an oscillator 4, an analog - to - digital converter 5, and a digital processing module 6. The digital processing module 6 includes a control logic unit 7; wherein, the compensation structure 1 is respectively connected to the bias circuit 2 and the analog - to - digital converter 5, and the analog - to - digital converter 5 is respectively connected to the oscillator 4, the reference voltage 3, and the digital processing module 6; the remote temperature - sensing chip is connected to the remote temperature - sensing triode 8 in a sampling differential manner through the compensation structure 1 to achieve differential sampling of the remote temperature - sensing triode 8, which can reduce the influence of coupling noise on the circuit board on the temperature - measurement accuracy.

[0038] In an embodiment of the present invention, the bias circuit 2 is a controllable current - source circuit, and the bias circuit 2 provides a bias current for the remote temperature - sensing triode 8 by being connected to the compensation structure 1.

[0039] In an embodiment of the present invention, the control logic unit 7 is used to control the bias circuit 2 to provide different ratios of bias current to the remote temperature - sensing triode 8. For example, I bias , 6I bias and 16I bias .

[0040] In an embodiment of the present invention, the analog-to-digital converter 5 is a Σ-Δ analog-to-digital converter 5 and adopts a switched-capacitor structure; the analog-to-digital converter 5 includes a first-stage integrator, a second-stage integrator, and a comparator.

[0041] Among them, the amplifier of the first-stage integrator is a gain-enhanced folded cascode amplifier, and an auto-zero technique is adopted in the first-stage integrator to suppress the offset voltage and low-frequency flicker noise of the first-stage integrator amplifier. The amplifier of the second-stage integrator adopts a common folded cascode amplifier.

[0042] In an embodiment of the present invention, the oscillator 4 is a low-temperature-drift structure oscillator 4, and the oscillator 4 provides a low-temperature-drift clock for the analog-to-digital converter 5 and the control logic unit 7 respectively.

[0043] In an embodiment of the present invention, the reference voltage 3 is a low-temperature-drift bandgap reference voltage 3, and the reference voltage 3 provides a reference voltage V for the analog-to-digital converter 5 REF 。

[0044] In an embodiment of the present invention, the digital processing module 6 performs decimation filtering operation on the bit stream output by the analog-to-digital converter 5 and outputs a target temperature value; and the digital processing module 6 is used to calculate a compensation factor according to the compensation structure 1 and calibrate the remote temperature reading.

[0045] Specifically, the digital processing circuit performs decimation filtering operation on the bit stream output by the ADC converter to obtain the bit stream mean value μ, multiplies it by the slope value A, and adds the offset value B to obtain the decimal temperature value D temp ; this digital processing circuit also includes the function of calculating a compensation factor according to the compensation structure and calibrating the remote temperature reading.

[0046] Based on the above-mentioned remote temperature sensing chip with temperature sensing accuracy compensation, in an embodiment of the present invention, the compensation structure includes a parasitic resistance elimination circuit, an I C -V BE non-ideality compensation circuit, an I E -V BE non-ideality and Early effect compensation circuit.

[0047] When there is a parasitic resistance affecting sampling in the remote temperature sensing triode, the compensation structure switches to a parasitic resistance elimination circuit. When there is an influence of the saturation current in the remote temperature sensing triode, the compensation structure switches to an I C -V BE non-ideality compensation circuit. When there are influences of the DC amplification factor β and the reverse Early voltage V AR in the remote temperature sensing triode, the compensation structure switches to an I E -V BE non-ideality and Early effect compensation circuit.

[0048] By designing corresponding compensation circuits for each non-ideal factor of the remote temperature sensing triode inside the chip, calibration of the remote temperature reading is achieved, precisely eliminating the influence of various non-ideal factors in the remote temperature sensing triode on the temperature sensing accuracy, and further meeting the requirements of high-precision remote temperature measurement.

[0049] The following will describe each compensation circuit in the compensation structure in detail.

[0050] In an embodiment of the present invention, when there is a parasitic resistance affecting sampling in the remote temperature sensing triode, the compensation structure switches to a parasitic resistance elimination circuit.

[0051] Figure 3 Schematically shows the schematic diagram of the parasitic resistance elimination circuit according to an embodiment of the present invention.

[0052] As Figure 3 shown, R1 and R2 are parasitic resistances on the leads between the remote temperature sensing triode and the temperature sensor; switches S1, S2, and S3 are switches for controlling different bias currents flowing into the remote temperature sensing triode.

[0053] Since the base region resistance of the remote temperature sensing triode and the parasitic resistance in the lead will greatly affect the sampling values ΔV BE and V BE , thus affecting the remote temperature measurement accuracy, it is necessary to adopt a parasitic resistance elimination technique. The schematic diagram of the proposed parasitic resistance elimination technique is as Figure 3 shown. Due to the adoption of a differential input structure, there are parasitic resistances R1 and R2 on the two differential input lines respectively. However, since the currents flowing through these two resistances are the same, R1 and R2 can be equivalent to a single parasitic resistance R P , that is:

[0054] (6)

[0055] By controlling the on / off of switches S1, S2, and S3 with a control signal, the magnitudes of the bias currents flowing through the remote temperature sensing triode are made to be I bias , 6I bias and 16I bias respectively. Then, the base-emitter voltages at the three different bias currents are V BE1 , V BE2 and V BE3 :

[0056] (7)

[0057] (8)

[0058] (9)

[0059] The ADC sampling is controlled by the chip sampling timing logic, and the weighted subtraction of the base-emitter voltage values obtained from three samplings can be realized, and finally the base-emitter voltage difference ΔV is obtained. BE is:

[0060] (10)

[0061] It can be seen from the above formula that the ΔV obtained after weighted subtraction BE value no longer contains the error term introduced by the parasitic resistance R P Thus, the influence of the parasitic resistance R P on the remote temperature sensing accuracy is eliminated.

[0062] In the embodiment of the present invention, when there is an influence of the saturation current in the remote temperature sensing triode, the compensation structure switches to the non-ideality compensation circuit of I C -V BE

[0063] Figure 4 Schematically shows the schematic diagram of the non-ideality compensation circuit of I C -V BE

[0064] As Figure 4 shown, the switches S1~SN are switches for controlling different bias currents to flow into the remote temperature sensing triode; the control signal is provided to the comparator, and the comparator compares the V BE of the remote temperature sensing triode with the voltage of 0.26V. When it is lower than 0.26V, the control signal is 0, and when it is higher than 0.26V, the control signal is 1.

[0065] Due to the non-ideality of I C -V BE in the remote temperature sensing triode will affect the accuracy of V BE , formula (1) becomes:

[0066] (11)

[0067] Thus, it affects the accuracy of ΔV BE , and formula (2) becomes:

[0068] (12)

[0069] It can be seen from formula (12) that the non-ideality of I C -V BE mainly introduces the influence of the saturation current I S in formula (2). If when in formula (12) I bias ​​If it is large enough, I can be ignored. S When V in formula (11) BE is greater than 0.26V, it can ensure that I bias is much larger than I S , thus eliminating the influence of I S in formula (12). The proposed non-ideality compensation circuit for I C -V BE can control the magnitude of the bias current I bias flowing through the remote temperature-sensing triode, achieving the effect of raising the remote sampling voltage V BE , ensuring that the remote sampling voltage V BE > 0.26V, that is, the influence of I S in formula (12) can be eliminated, thereby improving the temperature-sensing accuracy.

[0070] In the embodiment of the present invention, when there are the influences of the DC current gain β and the Early voltage V AR in the remote temperature-sensing triode, the compensation structure switches to the non-ideality and Early effect compensation circuit for I E -V BE .

[0071] Figure 5 Schematically shows the schematic diagram of the non-ideality and Early effect compensation circuit for I E -V BE according to the embodiment of the present invention.

[0072] As Figure 5 shown, switches S1~S5 are switches for controlling different bias currents flowing into the remote temperature-sensing triode; resistor R beta is the measuring resistor.

[0073] Since the non-ideality of I E -V BE in the remote temperature-sensing triode will affect the accuracy of ΔV BE , formula (2) becomes

[0074] (13)

[0075] where β1 and β2 are the DC current gains under the bias currents of I bias and NI bias respectively.

[0076] It can be seen from formula (13) that the non-ideality of I E -V BE mainly introduces the influence of the DC current gain β in formula (2), that is, generates an additive factor γ.

[0077] (14)

[0078] Since the Early effect in the remote temperature-sensing triode will affect the accuracy of ΔV BE , Equation (2) becomes

[0079] (15)

[0080] where V AR is the reverse Early voltage.

[0081] It can be seen from Equation (15) that the Early effect mainly introduces the influence of the reverse Early voltage V AR in Equation (2), that is, a product factor α is generated.

[0082] (16)

[0083] Therefore, by only detecting the magnitudes of β and V AR under different temperatures and different bias currents, the compensation factors γ and 1 / α can be calculated, thereby digitally compensating for ΔV BE for the errors caused by β and V AR and reducing its influence on the remote temperature measurement accuracy. In the Gummel-Poon model, when the collector-base voltage V BC of the triode is set to zero, the DC current gain β can be approximately described as:

[0084] (17)

[0085] where β'0 is the DC current gain of the triode without considering the Early effect. Thus, the reverse Early voltage V BE of the triode can be obtained by measuring the DC current gain β at different V AR . That is, the reverse Early voltage V I1 of the triode can be obtained by measuring the DC current gains β I2 and β AR of the remote temperature-sensing triode at two different currents, and the calculation formula is as follows:

[0086] (18)

[0087] where V BE,I1 and V BE,I2 are the base-emitter voltages of the remote temperature-sensing triode at different bias currents, respectively. It can be seen from the above formula that the reverse Early voltage value V AR can be calculated from the β value. Therefore, as long as the magnitude of the β value can be detected, the compensation factors 1 / α and γ can be calculated, thereby realizing digital compensation for the remote temperature measurement accuracy and reducing the influence of the Early voltage error and the β error on the remote temperature-sensing accuracy.

[0088] Further, such as Figure 5 As shown, the compensation structure works as follows: When the chip responds to the remote temperature voltage signal V BE When performing sampling conversion, switches S1, S2 and S3 are closed, switches S4 and S5 are opened, and the ADC samples the sampled V under different bias currents. BE Voltage.

[0089] When the chip measures the DC gain β of the remote temperature-sensing transistor, it will be measured twice. The first measurement: switches S2 and S5 are closed, and switches S1, S3 and S4 are opened. At this time, the bias current I bias Directly flows through the measuring resistor R beta ADC directly samples and measures the resistance R beta The voltage across the two ends is V beta (I E ), this voltage can indirectly represent the emitter current I flowing through the remote temperature sensing transistor in the normal temperature measurement mode of the chip. E .

[0090] Second measurement: The collector and base of the remote temperature sensing transistor are disconnected, and the collector is grounded. At this time, switches S1, S4 and S5 are closed, and switches S2 and S3 are disconnected. At this time, the bias current I bias The base current I flowing through the remote temperature sensing transistor B Flowing through the measuring resistor R beta ADC directly samples and measures the resistance R beta The voltage across the two ends is V beta (I B ), this voltage can indirectly represent the base current I flowing through the remote temperature sensing transistor in the normal temperature measurement mode of the chip. B .

[0091] Through these two samplings, the bias current I bias The emitter current I of the lower remote temperature sensing transistor under the same bias current E Characteristic voltage V beta (I E ), and the base current I B Characteristic voltage V beta (I B ), through these two sampling characterization voltages, the DC amplification factor β of the remote temperature sensing transistor under the current bias current can be calculated at the digital back end. The calculation formula is as follows:

[0092] (19)

[0093] According to this sampling method and calculation method, the DC amplification factor β of the remote temperature-sensing triode under different bias currents can be obtained, so as to calculate the compensation factors 1 / α and γ in the digital processing module to digitally compensate the remote temperature measurement accuracy. The specific digital compensation method is as follows:

[0094] Based on the quantization process of the ADC in the chip for the remote temperature voltage signal ∆V BE and considering the influence of the DC amplification factor β and reverse Early voltage V AR of the parasitic triode on ∆V BE (since the influence of the parasitic resistance has been eliminated by the parasitic resistance elimination technology, it is not necessary to consider), the digital linear output μ after the final quantization of the ADC is obtained as: final as follows:

[0095] (20)

[0096] where γ1, γ2, and γ3 are the compensation factors of the remote parasitic triode under different bias currents (the bias current ratio is 1:6:16). According to formula (20), it can be known that 1 / α, γ1, γ2, and γ3 obtained by calculation can be used to compensate and correct the errors introduced by β and V AR in the digital output μ final so as to eliminate the non-ideality of I E -V BE in the remote temperature-sensing triode and the influence of the Early effect on the remote temperature measurement accuracy.

[0097] Through the embodiments of the present invention, the remote temperature sensing chip with the function of compensating the remote temperature measurement accuracy includes a compensation circuit for non-ideal factors in the remote temperature-sensing triode, that is, the parasitic resistance elimination circuit technology, the non-ideality compensation circuit of I C -V BE , the non-ideality and Early effect compensation circuit of I E -V BE . Among them, the parasitic resistance circuit can eliminate the influence of the parasitic resistance on the remote temperature measurement accuracy; the non-ideality compensation circuit of I C -V BE can eliminate the influence of I S in the remote temperature-sensing triode on the remote temperature measurement accuracy; the non-ideality and Early effect compensation circuit of I E -V BE can detect the magnitudes of the amplification factor β and reverse Early voltage V AR of the remote temperature-sensing triode, and then through targeted digital compensation, the non-ideality of I E -V BE and the influence of the Early effect on the remote temperature measurement accuracy can be eliminated. The chip structure proposed in the embodiments of the present invention realizes the influence of each non-ideal factor in the remote temperature-sensing triode on ΔVBE Precise calibration of the accuracy impact to meet the high-precision temperature measurement requirements.

[0098] Those skilled in the art can understand that although the present invention has been shown and described with reference to specific exemplary embodiments of the present invention, those skilled in the art should understand that various changes in form and details can be made to the present invention without departing from the spirit and scope of the present invention as defined by the appended claims and their equivalents. Therefore, the scope of the present invention should not be limited to the above embodiments, but should be determined not only by the appended claims but also by the equivalents of the appended claims.

[0099] The above specific embodiments have further detailed the purpose, technical solution and beneficial effects of the present invention. It should be understood that the above are only specific embodiments of the present invention and are not used to limit the present invention. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principle of the present invention should be included within the protection scope of the present invention.

Claims

1. A remote temperature sensing chip with temperature sensing accuracy compensation, characterized in that, It includes a compensation structure (1), a bias circuit (2), a reference voltage (3), an oscillator (4), an analog-to-digital converter (5), and a digital processing module (6), and the digital processing module (6) includes a control logic unit (7); Among them, the compensation structure (1) is respectively connected to the bias circuit (2) and the analog-to-digital converter (5), and the analog-to-digital converter (5) is respectively connected to the oscillator (4), the reference voltage (3), and the digital processing module (6); The remote temperature sensing chip is connected to the remote temperature sensing triode (8) in a sampling differential manner through the compensation structure (1) to realize differential sampling of the remote temperature sensing triode (8).

2. The distal temperature sensing chip with temperature sensing accuracy compensation according to claim 1, characterized in that, The compensation structure (1) includes a parasitic resistance elimination circuit, a non-ideality compensation circuit for I C -V BE , and a non-ideality and Early effect compensation circuit for I E -V BE .

3. The distal temperature sensing chip with temperature sensing accuracy compensation according to claim 1, characterized in that The bias circuit (2) is a controllable current source circuit, and the bias circuit (2) provides a bias current for the remote temperature sensing triode (8) by being connected to the compensation structure (1).

4. The distal temperature sensing chip with temperature sensing accuracy compensation according to claim 1, characterized in that The analog-to-digital converter (5) is a Σ-Δ analog-to-digital converter (5) and adopts a switched-capacitor structure; The analog-to-digital converter (5) includes a first-stage integrator, a second-stage integrator, and a comparator. Among them, the amplifier of the first-stage integrator is a gain-enhanced folded cascode amplifier, and the amplifier of the second-stage integrator adopts an ordinary folded cascode amplifier.

5. The distal temperature sensing chip with temperature sensing accuracy compensation according to claim 1, characterized in that The oscillator (4) is a low-temperature-drift structure oscillator (4), and the oscillator (4) provides a low-temperature-drift clock for the analog-to-digital converter (5) and the control logic unit (7) respectively.

6. The distal temperature sensing chip with temperature sensing accuracy compensation according to claim 4, wherein The reference voltage (3) is a low-temperature-drift bandgap reference voltage (3), and the reference voltage (3) provides a reference voltage for the analog-to-digital converter (5).

7. The distal temperature sensing chip with temperature sensing accuracy compensation according to claim 4, characterized in that The digital processing module (6) performs decimation filtering operation on the bit stream output by the analog-to-digital converter (5) and outputs a target temperature value; and The digital processing module (6) is used to calculate a compensation factor according to the compensation structure (1) and calibrate the remote temperature reading.

8. The distal temperature sensing chip with temperature sensing accuracy compensation according to claim 1, characterized in that, The control logic unit (7) is used to control the bias circuit (2) to provide different proportions of bias current to the remote temperature sensing triode (8).

9. The distal temperature sensing chip with temperature sensing accuracy compensation according to claim 1, wherein When there is a parasitic resistance affecting sampling in the remote temperature sensing triode (8), the compensation structure (1) switches to a parasitic resistance elimination circuit.

10. The distal temperature sensing chip with temperature sensing accuracy compensation according to claim 1, characterized in that, When there is an influence of saturation current in the remote temperature sensing triode (8), the compensation structure (1) switches to a non-ideal compensation circuit of I C -V BE .

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