Semiconductor doping concentration measuring equipment, measuring method, device and storage medium

Abstract

The invention relates to semiconductor doping concentration measuring equipment, a semiconductor doping concentration measuring method, a semiconductor doping concentration measuring device and a storage medium, and belongs to the field of semiconductor manufacturing. The apparatus comprises: a measurement chamber comprising a first chamber for containing a first liquid and defining a corrosion location, the first liquid comprising a liquid that corrodes a semiconductor material; the first chamber at least comprises an opening facing and abutting against a to-be-measured part of the semiconductor product; the semiconductor product comprises a semiconductor finished product or a semiconductor semi-finished product; the liquid discharging component is connected with the first chamber; the control part is used for controlling the measuring chamber and the liquid discharging part; and the measuring chamber and the liquid discharging component are both in communication connection with the control component. According to the semiconductor doping concentration measurement equipment, the measurement method, the device and the storage medium, the measurement accuracy of the semiconductor doping concentration can be improved.

Description

Technical Field

[0001] The present application relates to the field of semiconductor manufacturing, and particularly to a semiconductor doping concentration measurement device, measurement method, device, and storage medium. Background Art

[0002] During the growth process of semiconductor materials, intentional doping is often required to achieve the functions of various optoelectronic and radio frequency device structures, such as forming various PN junctions and High Electron Mobility Transistor (HEMT) structures to adjust the luminescence performance or conductive characteristics of the structures. Since doping is often longitudinally distributed along the coating direction and alternates with the design of different structural layers, a testing method that peels off layer by layer and characterizes the doping levels of each layer from shallow to deep is needed.

[0003] Currently, the existing method for layer-by-layer characterizing the doping levels of each layer of a semiconductor structure is cyclic voltammetry (CV). Its testing principle is to utilize the anodic oxidation reaction in electrochemistry to achieve the corrosion effect on the semiconductor surface. During the process of the semiconductor thin film being peeled off layer by layer, the C-V characteristics of the potential barrier layer formed between the test electrolyte and the semiconductor surface are measured to confirm the doping concentration of the layer. However, this method has the problems of inaccurate and unstable test results. Summary of the Invention

[0004] In view of this, embodiments of the present application provide a semiconductor doping concentration measurement device, measurement method, device, and storage medium to solve at least one problem in the background art.

[0005] To achieve the above object, the technical solution of the present application is realized as follows:

[0006] In a first aspect, an embodiment of the present application provides a semiconductor doping concentration measurement device, including:

[0007] A measurement chamber, including a first chamber for accommodating a first liquid and defining a corrosion position, where the first liquid includes a liquid for corroding a semiconductor material; the first chamber includes at least one opening facing and abutting against a part to be measured of a semiconductor product; the semiconductor product includes a semiconductor finished product or a semiconductor semi-finished product;

[0008] A liquid discharge component, connected to the first chamber;

[0009] A measurement component, configured to measure the electrochemical performance of the liquid in the first chamber to obtain the doping concentration of the semiconductor material;

[0010] A control component for controlling the measurement chamber, the liquid discharge component, and the measurement component; the measurement chamber, the liquid discharge component, and the measurement component are all communicatively connected to the control component.

[0011] Optionally, the measurement chamber further includes a first sensor for obtaining the concentration of a first ion in the liquid in the first chamber to obtain the corrosion depth of the first semiconductor material layer; the first semiconductor material layer is a material layer with a preset thickness at the part to be measured in the semiconductor product; the first ion is an ion contained in the material composition of the first semiconductor material layer.

[0012] Optionally, the semiconductor doping concentration measurement device further includes an inflation component for discharging the liquid in the first chamber; the inflation component is communicatively connected to the control component.

[0013] Optionally, the measurement chamber further includes a second chamber for storing a second liquid, the second chamber is adjacent to the first chamber; a first valve for mutual communication is provided between the second chamber and the first chamber, and the first valve is communicatively connected to the control component; the second liquid is a medium for measuring the doping concentration.

[0014] In a second aspect, an embodiment of the present application provides a method for measuring semiconductor doping concentration, which is applied to any one of the above semiconductor doping concentration measurement devices, and the method includes:

[0015] Obtain the corrosion depth of a preset part of the first semiconductor material layer; the first semiconductor material layer is a material layer with a preset thickness at the part to be measured in the semiconductor product;

[0016] When the corrosion depth is greater than or equal to a preset depth, control the liquid discharge component to discharge the liquid in the first chamber; the liquid includes the first liquid and the residue after the first semiconductor material layer is corroded;

[0017] When the liquid in the first chamber is drained, measure the doping concentration of the corroded first semiconductor material layer.

[0018] Optionally, the measurement chamber further includes a first sensor, and the obtaining of the corrosion depth of the first semiconductor material layer includes:

[0019] Through the first sensor, obtain the concentration of the first ion in the liquid in the first chamber to obtain the corrosion depth of the first semiconductor material layer; the first ion is an ion contained in the material composition of the first semiconductor material layer;

[0020] Determine the corrosion depth of the first semiconductor material layer according to the concentration of the first ion.

[0021] Optionally, when the corrosion depth is greater than or equal to a preset depth, controlling the liquid discharge component to discharge the first liquid in the first chamber includes:

[0022] When the corrosion depth is greater than or equal to a preset depth, controlling the liquid discharge component to open the liquid discharge channel of the first chamber so that the liquid in the first chamber is discharged.

[0023] Optionally, the semiconductor doping concentration measuring device further includes an air filling component, and the air filling component is communicatively connected to the control component; when the corrosion depth is greater than or equal to a preset depth, controlling the liquid discharge component to discharge the first liquid in the first chamber includes:

[0024] When the corrosion depth is greater than or equal to a preset depth, controlling the air filling component to input gas into the first chamber so that the liquid in the first chamber is discharged.

[0025] Optionally, the measurement chamber further includes a second chamber for storing a second liquid, and the second chamber is adjacent to the first chamber; a first valve communicating with each other is provided between the second chamber and the first chamber, and the first valve is communicatively connected to the control component; the second liquid is a medium for measuring the doping concentration; measuring the doping concentration of the first semiconductor material layer after corrosion includes:

[0026] Controlling the first valve between the second chamber and the first chamber to open so that the second liquid in the second chamber enters the first chamber;

[0027] Determining the doping concentration of the first semiconductor material layer by acquiring the electrochemical characteristics of the second liquid.

[0028] In a third aspect, an embodiment of the present application provides a semiconductor doping concentration measuring device, which is applied to any one of the above semiconductor doping concentration measuring devices, and the device includes:

[0029] An acquisition module, configured to acquire the corrosion depth of a preset part of the first semiconductor material layer being corroded; the first semiconductor material layer is a material layer with a preset thickness at a part to be measured in a semiconductor product;

[0030] A liquid discharge module, configured to control a liquid discharge component to discharge the liquid in the first chamber when the corrosion depth is greater than or equal to a preset depth; the liquid includes the first liquid and the residue after the first semiconductor material layer is corroded;

[0031] A measurement module, configured to measure the doping concentration of the first semiconductor material layer after corrosion when the liquid in the first chamber is drained.

[0032] Fourth aspect, an embodiment of the present application provides a computing device, which includes: a storage component, a communication bus, and a processing component, where:

[0033] The storage component is used to store a semiconductor doping concentration measurement method program;

[0034] The communication bus is used to implement the connection and communication between the storage component and the processing component;

[0035] The processing component is used to execute the semiconductor doping concentration measurement method program to implement the steps of any one of the methods described above.

[0036] Fifth aspect, an embodiment of the present application provides a computer-readable storage medium, on which an executable program is stored. When the executable program is executed by a processor, the steps of any one of the methods described above are implemented.

[0037] The semiconductor doping concentration measurement device, measurement method, device, and storage medium provided by the embodiments of the present application. The device includes: a measurement chamber, including a first chamber for accommodating a first liquid and defining an etching position, where the first liquid includes a liquid for etching a semiconductor material; the first chamber includes at least one opening facing and abutting against the part to be measured of the semiconductor product; the semiconductor product includes a semiconductor finished product or a semiconductor semi-finished product; a liquid discharge component connected to the first chamber; a measurement component for measuring the electrochemical performance of the liquid in the first chamber to obtain the doping concentration of the semiconductor material; a control component for controlling the measurement chamber, the liquid discharge component, and the measurement component; the measurement chamber, the liquid discharge component, and the measurement component are all communicatively connected to the control component. It can be seen that for the semiconductor doping concentration measurement device, measurement method, device, and storage medium provided by the embodiments of the present application, by setting a first chamber in the measurement chamber, the first chamber is connected with a liquid discharge component. After the preset part of the first semiconductor material layer is etched to a preset depth, the liquid in the first chamber is discharged, and then the doping concentration is measured, avoiding the cations generated by the first semiconductor material layer itself during the etching process from mixing into the test medium and affecting the measurement accuracy. Therefore, the semiconductor doping concentration measurement device, measurement method, device, and storage medium provided by the embodiments of the present application can improve the measurement accuracy of the semiconductor doping concentration.

[0038] Additional aspects and advantages of the present application will be given in part in the following description, become apparent in part from the following description, or be learned through the practice of the present application. Description of the Drawings

[0039] The accompanying drawings described herein are used to provide a further understanding of the present application and form a part of the present application. The schematic embodiments of the present application and their descriptions are used to explain the present application and do not constitute an improper limitation to the present application. In the drawings:

[0040] Figure 1 It is a schematic structural diagram of a semiconductor doping concentration measurement device provided in the first embodiment of the present application;

[0041] Figure 2 It is a schematic flowchart of a semiconductor doping concentration measurement method provided in the second embodiment of the present application;

[0042] Figure 3 It is a schematic structural diagram of a semiconductor doping concentration measurement device provided in the third embodiment of the present application;

[0043] Figure 4 It is a schematic structural diagram of a computing device provided in the fourth embodiment of the present application.

[0044] Explanation of reference numerals:

[0045] 10. Measurement chamber; 11. First chamber; 12. Second chamber; 20. Drainage component; 21. First drain pipe; 30. Control component; 40. Inflation component; 51. Liquid filling pipe; 52. Second drain pipe; 700. Semiconductor doping concentration measurement device; 701. Acquisition module; 702. Drainage module; 703. Measurement module; 900. Computing device; 901. Storage component; 902. Communication bus; 903. Processing component; 904. Input device; 905. Output device; 906. External communication interface. Detailed implementation manners

[0046] The exemplary embodiments disclosed in the present application will be described in more detail below with reference to the accompanying drawings. Although the exemplary embodiments of the present application are shown in the drawings, it should be understood that the present application can be implemented in various forms and should not be limited by the specific implementation manners set forth herein. On the contrary, these embodiments are provided so that the present application can be more thoroughly understood and the scope of the present application disclosed can be fully conveyed to those skilled in the art.

[0047] In the following description, a large number of specific details are given to provide a more thorough understanding of the present application. However, it is obvious to those skilled in the art that the present application can be implemented without one or more of these details. In other examples, in order to avoid confusion with the present application, some technical features well known to those skilled in the art are not described; that is, not all features of the actual embodiments are described here, and the well-known functions and structures are not described in detail.

[0048] To thoroughly understand the present application, detailed steps and structures will be presented in the following description to illustrate the technical solutions of the present application. The preferred embodiments of the present application are described in detail below. However, in addition to these detailed descriptions, the present application may have other implementation manners.

[0049] In a large number of R & D efforts, the inventors of the present application have found that the problem with the CV test method is that as the anodic oxidation reaction proceeds, the cations of the semiconductor material dissolved on the surface will mix into the electrolyte, affecting the charge transfer between the electrolyte and the semiconductor surface. As a result, the CV characteristics of the semiconductor surface deviate from the actual situation. Especially for materials with low doping concentration and small bandgap, their CV characteristics are greatly affected by changes in the electrolyte, and there may be phenomena such as inaccurate measurement results and large deviations from the accurate results.

[0050] Therefore, through further R & D by the inventors, the following technical solutions are proposed.

[0051] Embodiment 1

[0052] An embodiment of the present application provides a semiconductor doping concentration measuring device. Referring to Figure 1 , the device includes:

[0053] A measurement chamber 10, including a first chamber 11 for accommodating a first liquid and defining an etching position, where the first liquid includes a liquid for etching the semiconductor material; the first chamber 11 has at least one opening facing and abutting against the part to be measured of the semiconductor product; the semiconductor product includes a semiconductor finished product or a semiconductor semi-finished product;

[0054] A liquid discharge component 20, connected to the first chamber 11;

[0055] A measurement component (not shown in the figure), for measuring the electrochemical properties of the liquid in the first chamber 11 to obtain the doping concentration of the semiconductor material;

[0056] A control component 30, for controlling the measurement chamber 10, the liquid discharge component 20, and the measurement component; the measurement chamber 10, the liquid discharge component 20, and the measurement component are all communicatively connected to the control component.

[0057] It can be understood that the measurement component can be the components used in CV measurement, which are well-known to those skilled in the art and will not be elaborated here. The first liquid in the first chamber 11 contacts the part to be measured of the semiconductor product through the opening and then undergoes etching. Therefore, the measurement chamber 10 can define the etching position.

[0058] The liquid discharging component 20 may include a first liquid discharge pipe 21 which communicates with the inner cavity of the first chamber 11. When it is necessary to measure the doping concentration, the liquid in the first chamber 11 is discharged to avoid the residues after the semiconductor is corroded from mixing into the liquid and affecting the measurement accuracy.

[0059] The communication connection can be a wired connection or a wireless connection. The specific connection relationship is not shown in the attached figure. Figure 1 In the figure, the specific connection relationship is not shown.

[0060] In the semiconductor doping concentration measurement device according to the embodiment of the present application, by providing a first chamber 11 in the measurement chamber 10, and the first chamber 11 is connected with a liquid discharging component 20. After the preset part of the first semiconductor material layer is corroded to the preset depth, the liquid in the first chamber 11 is discharged, and then the doping concentration is measured, so as to avoid the cations generated by the first semiconductor material layer itself during the corrosion process from mixing into the test medium and affecting the measurement accuracy. Therefore, the semiconductor doping concentration measurement device, measurement method, device and storage medium according to the embodiment of the present application can improve the measurement accuracy of the semiconductor doping concentration.

[0061] In some embodiments, the measurement chamber further includes a first sensor for obtaining the concentration of the first ions in the liquid in the first chamber 11 to obtain the corrosion depth of the first semiconductor material layer.

[0062] Specifically, the first semiconductor material layer can be a material layer with a specific doping concentration in a semiconductor product, such as a P-doped layer, an N-doped layer, a P+-doped layer, an N+-doped layer, etc.

[0063] The first ions are the ions contained in the material composition of the first semiconductor material layer. For example, if the material composition of the first semiconductor material layer is gallium arsenide (GaAs), the first ions can be Ga ions and / or As ions.

[0064] Specifically, the first sensor can be a voltage sensor or a current sensor.

[0065] In detail, the measurement principle of the first sensor is: by obtaining the concentration of the first ions in the liquid in the first chamber 11 to obtain the corrosion depth of the first semiconductor material layer. That is, after the first semiconductor material layer is corroded, the first ions will enter the liquid in the first chamber 11. Therefore, the concentration of the first ions is proportional to the corrosion thickness.

[0066] In some embodiments, the semiconductor doping concentration measurement device further includes an air filling component 40 for discharging the liquid in the first chamber 11; the air filling component 40 is communicatively connected with the control component.

[0067] By inputting gas into the first chamber 11 through the gas charging component 40, the liquid can be discharged more quickly and thoroughly. Specifically, the gas output by the gas charging component 40 is high-pressure gas, and the specific parameters of the gas can be 0.4 - 1 Mpa, and the flow rate is 0.5 - 1 L / min. In this way, the liquid can be discharged more quickly, and there is no damage to the semiconductor and the measuring components.

[0068] Further, the gas charging component 40 includes a gas jet port entering the first chamber 11, and the gas jet port can be provided with nozzles at different angles to more thoroughly discharge the liquid in the first chamber 11.

[0069] Further, the gas charging component 40 includes a gas jet port entering the first chamber 11, and the gas jet port can be provided with nozzles at different angles to more comprehensively discharge the liquid in the first chamber 11.

[0070] In some embodiments, the measurement chamber further includes a second chamber 12 for storing a second liquid, and the second chamber 12 is adjacent to the first chamber 11; a first valve communicating with each other is provided between the second chamber 12 and the first chamber 11, and the first valve is communicatively connected to the control component; the second liquid is a medium for measuring the doping concentration.

[0071] Specifically, the second liquid can be an electrolyte. Sometimes, the first liquid and the second liquid can be the same liquid.

[0072] By providing the second chamber 12, after the liquid in the first chamber 11 is discharged, the second liquid can be quickly obtained for measuring the doping concentration.

[0073] Further, the device is also provided with a liquid filling pipe 51 and a second liquid discharge pipe 52 connected to the second chamber 12 to supplement or discharge the liquid in the second chamber 12. For example, after the measurement work is completed, it can be directly discharged through the second liquid discharge pipe 52 without passing through the first chamber 11 and then through the first liquid discharge pipe 21.

[0074] Embodiment 2

[0075] The embodiment of the present application provides a method for measuring the semiconductor doping concentration. The method can be implemented by a computer, and the computer can be a computing device configured with a processor. The processor can be a general-purpose processor, a digital signal processor (DSP), a field programmable gate array (FPGA), or other programmable logic devices, discrete gate or transistor logic devices, discrete hardware components, etc.

[0076] The method is applied to the semiconductor doping concentration measuring device described in Embodiment 1. Refer to Figure 2 , the method includes:

[0077] Step 601: Obtain the corrosion depth of a preset part of the first semiconductor material layer; the first semiconductor material layer is a material layer with a preset thickness at the part to be measured in the semiconductor product;

[0078] Step 602: When the corrosion depth is greater than or equal to the preset depth, control the liquid discharge component 20 to discharge the liquid in the first chamber 11; the liquid includes the first liquid and the residue after the first semiconductor material layer is corroded;

[0079] Step 603: When the liquid in the first chamber 11 is drained, measure the doping concentration of the corroded first semiconductor material layer.

[0080] In step 601, only when a sufficient depth is corroded can the doping concentration be measured, or accurately measured. The corrosion depth is represented as D1 in the accompanying drawings.

[0081] Specifically, the first semiconductor material layer can be a material layer with a specific doping concentration in the semiconductor product, such as a P-doped layer, an N-doped layer, a P+-doped layer, an N+-doped layer, etc.

[0082] In step 602, specifically, the first liquid can be an electrolyte, and the residue can be the cations of the semiconductor material.

[0083] In step 603, when the liquid in the first chamber 11 is drained, that is, there is no liquid or very little liquid on the surface of the part to be measured. Here, the measurement can be the CV measurement method.

[0084] In the semiconductor doping concentration measurement method according to the embodiment of the present application, by setting the first chamber 11 in the measurement chamber 10, the first chamber 11 is connected to the liquid discharge component 20. After the preset part of the first semiconductor material layer is corroded to the preset depth, the liquid in the first chamber 11 is discharged, and then the doping concentration is measured, avoiding the cations generated by the first semiconductor material layer itself during the corrosion process from mixing into the test medium and affecting the measurement accuracy. Therefore, the semiconductor doping concentration measurement device, measurement method, device, and storage medium according to the embodiment of the present application can improve the measurement accuracy of the semiconductor doping concentration.

[0085] In some embodiments, the measurement chamber 10 further includes a first sensor (not shown in the figure), and obtaining the corrosion depth of the first semiconductor material layer includes:

[0086] Obtain the concentration of the first ions in the liquid in the first chamber 11 through the first sensor to obtain the corrosion depth of the first semiconductor material layer; the first ions are the ions included in the material components of the first semiconductor material layer;

[0087] Determine the etching depth of the first semiconductor material layer according to the concentration of the first ions.

[0088] Specifically, the first sensor can be a voltage sensor or a current sensor.

[0089] The measurement principle of the first sensor is as follows: by obtaining the concentration of the first ions in the liquid in the first chamber 11, the etching depth of the first semiconductor material layer is obtained. That is, after the first semiconductor material layer is etched, the first ions will enter the liquid in the first chamber 11. Therefore, the concentration of the first ions is proportional to the etching thickness.

[0090] The first ions are the ions contained in the material composition of the first semiconductor material layer. For example, if the material composition of the first semiconductor material layer is gallium arsenide (GaAs), the first ions can be Ga ions and / or As ions.

[0091] In some embodiments, when the etching depth is greater than or equal to a preset depth, controlling the liquid discharge component 20 to discharge the first liquid in the first chamber 11 includes:

[0092] When the etching depth is greater than or equal to a preset depth, control the liquid discharge component 20 to open the liquid discharge channel of the first chamber 11 so that the liquid in the first chamber 11 is discharged.

[0093] The liquid discharge component 20 can include a second valve for opening the liquid discharge channel to discharge the liquid from the first chamber 11 through the second valve. The liquid discharge channel includes the above-mentioned first liquid discharge pipe 21.

[0094] Furthermore, the liquid discharge component 20 can also include a negative pressure generating component to guide the liquid in the first chamber 11 to be discharged through negative pressure.

[0095] In some embodiments, refer to Figure 1 , the semiconductor doping concentration measuring device further includes a gas filling component 40, and the gas filling component 40 is communicatively connected to the control component 30; when the etching depth is greater than or equal to a preset depth, controlling the liquid discharge component 20 to discharge the first liquid in the first chamber 11 includes:

[0096] When the etching depth is greater than or equal to a preset depth, control the gas filling component 40 to input gas into the first chamber 11 so that the liquid in the first chamber 11 is discharged.

[0097] By inputting gas into the first chamber 11 through the gas filling component 40, the liquid can be discharged more quickly and more thoroughly.

[0098] Specifically, the gas output by the inflating component 40 is high-pressure gas. The specific parameters of the gas can be 0.4 - 1 Mpa, and the flow rate is 0.5 - 1 L / min. In this way, the liquid can be discharged more quickly, and there is no damage to the semiconductor and the measuring component.

[0099] Further, the inflating component 40 includes a jet port entering the first chamber 11. The jet port can be provided with nozzles at multiple different angles to more thoroughly discharge the liquid in the first chamber 11.

[0100] In some embodiments, referring to Figure 1 , the measuring chamber 10 further includes a second chamber 12 for storing a second liquid. The second chamber 12 is adjacent to the first chamber 11; a first valve communicating with each other is provided between the second chamber 12 and the first chamber 11, and the first valve is communicatively connected to the control component 30; the second liquid is a medium for measuring the doping concentration; the measurement of the doping concentration of the corroded first semiconductor material layer includes:

[0101] Controlling the first valve between the second chamber 12 and the first chamber 11 to open, so that the second liquid in the second chamber 12 enters the first chamber 11;

[0102] Determining the doping concentration of the first semiconductor material layer by obtaining the electrochemical characteristics of the second liquid.

[0103] Specifically, the second liquid can be an electrolyte. Sometimes, the first liquid and the second liquid can be the same liquid.

[0104] By providing the second chamber 12, the second liquid can be quickly obtained after the liquid in the first chamber 11 is discharged, so as to measure the doping concentration.

[0105] Further, the device is also provided with a liquid filling pipe 51 and a second liquid discharge pipe 52 connected to the second chamber 12, so as to supplement or discharge the liquid in the second chamber 12. For example, after the measurement work is completed, it can be directly discharged through the second liquid discharge pipe 52, without passing through the first chamber 11 and then through the first liquid discharge pipe 21.

[0106] In some embodiments, after measuring the doping concentration of the corroded first semiconductor material layer, the method further includes:

[0107] Measuring the doping concentration of the second semiconductor material layer by the same method; the second semiconductor material layer is adjacent to the first semiconductor material layer;

[0108] And so on, measuring the doping concentration of each material layer of the semiconductor product.

[0109] That is, for a semiconductor product with many stacked material layers, the doping concentration can be measured layer by layer according to the above method.

[0110] Embodiment III

[0111] An embodiment of the present application provides a semiconductor doping concentration measuring device 700, which is applied to the semiconductor doping concentration measuring equipment described in Embodiment I. Refer to Figure 3 , and the device includes:

[0112] An acquisition module 701, configured to acquire the corrosion depth of a preset part of a first semiconductor material layer; the first semiconductor material layer is a material layer with a preset thickness at the part to be measured in the semiconductor product;

[0113] A liquid discharge module 702, configured to control a liquid discharge component 20 to discharge the liquid in the first chamber 11 when the corrosion depth is greater than or equal to a preset depth; the liquid includes a first liquid and residues after the first semiconductor material layer is corroded;

[0114] A measurement module 703, configured to measure the doping concentration of the corroded first semiconductor material layer when the liquid in the first chamber 11 is drained.

[0115] In some embodiments, the measurement chamber 10 further includes a first sensor, and the acquisition module 701 is specifically configured to:

[0116] Acquire the concentration of a first ion in the liquid in the first chamber 11 through the first sensor to obtain the corrosion depth of the first semiconductor material layer; the first ion is an ion included in the material composition of the first semiconductor material layer;

[0117] Determine the corrosion depth of the first semiconductor material layer according to the concentration of the first ion.

[0118] Specifically, the first sensor may be a voltage sensor or a current sensor.

[0119] The measurement principle of the first sensor is: by acquiring the concentration of the first ion in the liquid in the first chamber 11 to obtain the corrosion depth of the first semiconductor material layer. That is, after the first semiconductor material layer is corroded, the first ion will enter the liquid in the first chamber 11. Therefore, the concentration of the first ion is proportional to the corrosion thickness.

[0120] In some embodiments, the liquid discharge module 702 is specifically configured to:

[0121] When the corrosion depth is greater than or equal to a preset depth, control the liquid discharge component 20 to open the liquid discharge channel of the first chamber 11 so that the liquid in the first chamber 11 is discharged.

[0122] The liquid discharging component 20 may include a second valve that opens a liquid discharge channel to discharge the liquid from the first chamber 11 through the second valve. The liquid discharge channel includes the aforementioned liquid discharge pipe.

[0123] Furthermore, the liquid discharging component 20 may further include a negative pressure generating component to guide the liquid in the first chamber 11 to discharge through negative pressure.

[0124] In some embodiments, the semiconductor doping concentration measuring device further includes an air filling component 40, and the communication connection liquid discharge module 702 is further configured to:

[0125] In the case where the corrosion depth is greater than or equal to a preset depth, control the air filling component 40 to input gas into the first chamber 11 to discharge the liquid in the first chamber 11.

[0126] By inputting gas into the first chamber 11 through the air filling component 40, the liquid can be discharged more quickly and more thoroughly.

[0127] Specifically, the gas output by the air filling component 40 is high-pressure gas, and the specific parameters of the gas may be 0.4 - 1 Mpa, and the flow rate is 0.5 - 1 L / min. In this way, the liquid can be discharged more quickly, and there is no damage to the semiconductor and the measuring components.

[0128] Furthermore, the air filling component 40 includes a gas jet port that enters the first chamber 11, and the gas jet port may be provided with nozzles at multiple different angles to discharge the liquid in the first chamber 11 more thoroughly.

[0129] In some embodiments, the measuring chamber 10 further includes a second chamber 12 for storing a second liquid, and the second chamber 12 is adjacent to the first chamber 11; a first valve that is communicatively connected to the control component 30 is provided between the second chamber 12 and the first chamber 11; the second liquid is a medium for measuring the doping concentration; the measuring module 703 is specifically configured to:

[0130] Control the first valve between the second chamber 12 and the first chamber 11 to open, so that the second liquid in the second chamber 12 enters the first chamber 11;

[0131] Determine the doping concentration of the first semiconductor material layer by obtaining the electrochemical characteristics of the second liquid.

[0132] Specifically, the second liquid may be an electrolyte solution, and in some cases, the first liquid and the second liquid may be the same liquid.

[0133] By setting the second chamber 12, after the liquid in the first chamber 11 is discharged, the second liquid can be quickly obtained for measuring the doping concentration.

[0134] In some embodiments, the measurement module 703 is further configured to:

[0135] By the same method, measure the doping concentration of the second semiconductor material layer; the second semiconductor material layer is adjacent to the first semiconductor material layer;

[0136] And so on, measure the doping concentration of each material layer of the semiconductor product.

[0137] That is, for a semiconductor product with many stacked material layers, the doping concentration can be measured layer by layer according to the above method.

[0138] Each module included in this embodiment can be implemented by a processor in a computer; of course, it can also be implemented by a logic circuit in the computer. The processor can be a general-purpose processor, a digital signal processor (DSP), a field-programmable gate array (FPGA), or other programmable logic devices, discrete gate or transistor logic devices, discrete hardware components, etc. Among them, the general-purpose processor can be a central processing unit (CPU), a microprocessor (MPU), or any other conventional processor.

[0139] The description of the above device embodiment is similar to that of the above embodiment and has similar beneficial effects to the above embodiment. For the technical details not disclosed in the device of this embodiment, please refer to the description of the above embodiment in this application for understanding.

[0140] Embodiment Four

[0141] This application embodiment provides a computing device 900. Refer to Figure 4 , the computing device 900 includes: a storage component 901, a communication bus 902, and a processing component 903, where:

[0142] The storage component 901 is used to store the semiconductor doping concentration measurement method program;

[0143] The communication bus 902 is used to implement the connection and communication between the storage component 901 and the processing component 903;

[0144] The processing component 903 is used to execute the semiconductor doping concentration measurement method program to implement the steps of the method as described in Embodiment Two.

[0145] The type or structure of the storage component 901 can be referred to the storage medium below and will not be elaborated here.

[0146] The processing component 903 can be a general-purpose processor, a digital signal processor (DSP), a field-programmable gate array (FPGA), or other programmable logic devices, discrete gate or transistor logic devices, discrete hardware components, etc. Among them, the general-purpose processor can be a central processing unit (CPU), a microprocessor (MPU), or any other conventional processor.

[0147] In some embodiments, the computing device 900 may further include: an input device 904, an output device 905, and an external communication interface 906, and these components are interconnected through a bus system and / or other forms of connection mechanisms (not shown in the figure). In this embodiment, the input device can be a network connector, an analog-to-digital converter, etc., and the output device can be a display, a speaker, etc.

[0148] In some embodiments, the input device 904 may further include, for example, a keyboard, a mouse, a microphone, etc. The output device 905 can output various information to the outside. For example, in addition to the above-mentioned display and speaker, it can also be a printer, a projector, and a communication network and its connected remote output devices, etc. The external communication interface 906 can be wired, such as a standard serial port (RS232), a General-Purpose Interface Bus (GPIB) interface, an Ethernet interface, a Universal Serial Bus (USB) interface, or wireless, such as wireless network communication technology (WiFi), Bluetooth, etc.

[0149] The description of the embodiments of the computing device 900 above is similar to the description of the above embodiments, and has similar beneficial effects to the above embodiments. For the technical details not disclosed in the computing device 900 of this embodiment, please refer to the description of the above embodiments in this application for understanding.

[0150] Embodiment Five

[0151] The embodiment of the present application provides a computer-readable storage medium, on which an executable program is stored, and when the executable program is executed by a processor, the steps of the method described in Embodiment Two are implemented.

[0152] Exemplarily, the computer-readable storage medium may adopt any combination of one or more readable media. The readable media may be a readable signal medium or a readable storage medium. The computer-readable storage medium is a tangible device that can hold and store instructions used by an instruction execution device. The readable storage medium may include, for example, but is not limited to, electrical, magnetic, optical, electromagnetic, infrared, or semiconductor systems, devices, or components, or any combination of the above. More specific examples (non-exhaustive list) of the readable storage medium include: portable computer disks, hard disks, random access memory (RAM), read-only memory (ROM), flash memory, portable compact disc read-only memory (CD-ROM), digital versatile disc (DVD), memory stick, floppy disk, mechanical encoding devices, such as punch cards or raised structures in grooves storing instructions thereon, and any suitable combination of the above. Among them:

[0153] The RAM includes: static random access memory (SRAM), synchronous static random access memory (SSRAM), dynamic random access memory (DRAM), synchronous dynamic random access memory (SDRAM), double data rate synchronous dynamic random access memory (DDR SDRAM), enhanced synchronous dynamic random access memory (ESDRAM), sync link dynamic random access memory (SLDRAM), direct rambus random access memory (DRRAM).

[0154] The ROM includes: Programmable Read-Only Memory (PROM), Erasable Programmable Read-Only Memory (EPROM), and Electrically Erasable Programmable Read-Only Memory (EEPROM).

[0155] The computer-readable storage medium used herein is not construed as an instantaneous signal itself, such as radio waves or other freely propagating electromagnetic waves, electromagnetic waves propagating through a waveguide or other transmission medium (e.g., optical pulses through an optical fiber cable), or electrical signals transmitted through wires.

[0156] The description of the above computer-readable storage medium embodiments is similar to the description of the above embodiments and has similar beneficial effects. For the technical details not disclosed in the computer-readable storage medium of this embodiment, please refer to the description of the above embodiments in this application for understanding.

[0157] It should be noted that the measurement device, measurement method, measurement apparatus, computing device, and storage medium embodiments provided in the embodiments of this application belong to the same concept; among the technical solutions recorded in each embodiment, the technical features can be arbitrarily combined without conflict.

[0158] It should be noted that in this text, the term "comprising", "including" or any other variant thereof is intended to cover non-exclusive inclusion, so that a process, method, article or device comprising a series of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such process, method, article or device. Without further limitation, an element defined by the phrase "comprising one..." does not exclude the presence of additional identical elements in the process, method, article or device comprising such element.

[0159] It should be understood that the above embodiments are all exemplary and do not cover all possible implementation manners included in the claims. Without departing from the scope of the present disclosure, various deformations and changes can be made on the basis of the above embodiments. Similarly, the technical features of the above embodiments can be arbitrarily combined to form additional embodiments of the present application that may not be explicitly described. Therefore, the above embodiments only represent several implementation manners of the present application and do not limit the protection scope of the patent of the present application.

Claims

1. A semiconductor doping concentration measuring device, characterized in that, Comprising: A measurement chamber, including a first chamber for containing a first liquid and defining a corrosion location, the first liquid including a liquid for corroding a semiconductor material; the first chamber at least includes an opening facing and abutting a portion to be measured of a semiconductor product; the semiconductor product includes a semiconductor finished product or a semiconductor semi-finished product; A liquid discharging component, connected to the first chamber; A measurement component, for measuring the electrochemical properties of the liquid in the first chamber to obtain the doping concentration of the semiconductor material; A control component, for controlling the measurement chamber, the liquid discharging component and the measurement component; the measurement chamber, the liquid discharging component and the measurement component are all communicatively connected to the control component.

2. The semiconductor doping concentration measuring device according to claim 1, characterized in that, The measurement chamber further includes a first sensor, for obtaining the concentration of a first ion in the liquid in the first chamber to obtain the corrosion depth of a first semiconductor material layer; the first semiconductor material layer is a material layer with a preset thickness at the portion to be measured of the semiconductor product; the first ion is an ion contained in the material composition of the first semiconductor material layer.

3. The semiconductor doping concentration measuring device according to claim 1, characterized in that, The semiconductor doping concentration measuring device further includes an air filling component, for discharging the liquid in the first chamber; the air filling component is communicatively connected to the control component.

4. The semiconductor doping concentration measuring device according to claim 1, characterized in that, The measurement chamber further includes a second chamber for storing a second liquid, the second chamber being adjacent to the first chamber; a first valve for mutual communication is provided between the second chamber and the first chamber, and the first valve is communicatively connected to the control component; the second liquid is a medium for measuring the doping concentration.

5. A method for measuring semiconductor doping concentration, which is applied to the semiconductor doping concentration measuring device according to any one of claims 1-4, and is characterized in that, The method includes: Obtaining the corrosion depth of a preset portion of a first semiconductor material layer being corroded; the first semiconductor material layer is a material layer with a preset thickness at the portion to be measured of the semiconductor product; When the corrosion depth is greater than or equal to a preset depth, controlling the liquid discharging component to discharge the liquid in the first chamber; the liquid includes the first liquid and the residue after the first semiconductor material layer is corroded; When the liquid in the first chamber is drained, measuring the doping concentration of the corroded first semiconductor material layer.

6. The semiconductor doping concentration measurement method according to claim 5, characterized in that, The measurement chamber further includes a first sensor, and the obtaining of the corrosion depth of the first semiconductor material layer includes: Through the first sensor, obtaining the concentration of a first ion in the liquid in the first chamber to obtain the corrosion depth of the first semiconductor material layer; the first ion is an ion contained in the material composition of the first semiconductor material layer; Determining the corrosion depth of the first semiconductor material layer according to the concentration of the first ion.

7. The semiconductor doping concentration measurement method according to claim 5, characterized in that When the corrosion depth is greater than or equal to a preset depth, controlling the liquid discharging component to discharge the first liquid in the first chamber includes: When the corrosion depth is greater than or equal to a preset depth, controlling the liquid discharging component to open the liquid discharging channel of the first chamber so that the liquid in the first chamber is discharged.

8. The semiconductor doping concentration measurement method according to claim 5, characterized in that, The semiconductor doping concentration measuring device further includes an air filling component, the air filling component is communicatively connected to the control component; when the corrosion depth is greater than or equal to a preset depth, controlling the liquid discharging component to discharge the first liquid in the first chamber includes: When the corrosion depth is greater than or equal to a preset depth, control the gas injection component to input gas into the first chamber so as to discharge the liquid in the first chamber.

9. The semiconductor doping concentration measurement method according to claim 5, characterized in that, The measurement chamber further includes a second chamber for storing a second liquid, and the second chamber is adjacent to the first chamber; a first valve communicating with each other is provided between the second chamber and the first chamber, and the first valve is communicatively connected to the control component; The second liquid is a medium for measuring the doping concentration; the measurement of the doping concentration of the corroded first semiconductor material layer includes: Control the first valve between the second chamber and the first chamber to open so that the second liquid in the second chamber enters the first chamber; Determine the doping concentration of the first semiconductor material layer by obtaining the electrochemical characteristics of the second liquid.

10. A semiconductor doping concentration measuring device, applied to the semiconductor doping concentration measuring equipment described in any one of claims 1-4, characterized in that, The device includes: An acquisition module for acquiring the corrosion depth of a preset part of the first semiconductor material layer; the first semiconductor material layer is a material layer with a preset thickness at the part to be measured in the semiconductor product; A liquid discharge module for controlling the liquid discharge component to discharge the liquid in the first chamber when the corrosion depth is greater than or equal to the preset depth; the liquid includes the first liquid and the residue after the first semiconductor material layer is corroded; A measurement module for measuring the doping concentration of the corroded first semiconductor material layer when the liquid in the first chamber is drained.

11. A computing device, characterized in that, The computing device includes: a storage component, a communication bus, and a processing component, where: The storage component is used to store the semiconductor doping concentration measurement method program; The communication bus is used to realize the connection communication between the storage component and the processing component; The processing component is used to execute the semiconductor doping concentration measurement method program to implement the steps of the method according to any one of claims 5 to 9.

12. A computer-readable storage medium, characterized in that, An executable program is stored on the computer-readable storage medium, and when the executable program is executed by a processor, the steps of the method according to any one of claims 5 to 9 are implemented.

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