Die bonder
By separating the crystal extraction and solidification process and optimizing the actuator logic, the existing solidification machines have been solved in terms of high precision and stability, and efficient and stable chip bonding is achieved, which is suitable for application scenarios with various requirements.
Patent Information
- Application Number
- CN202510505407.8
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-04-21
- Publication Date
- 2025-07-25
- Estimated Expiration
- 2045-04-21
AI Technical Summary
During the crystal extraction and crystal fixation process of existing crystal solid machines, the actuator needs to compensate for the position deviation of the wafer and substrate at the same time, resulting in cumbersome actions and complex operation logic, making it difficult to maintain high accuracy and stability for a long time.
The crystal extraction and crystal solidification process are divided into two independent steps, which are performed by the crystal extraction mechanism and the crystal solidification mechanism respectively. The position of the transit platform remains stable after calibration. The crystal extraction mechanism compensates for chip deviation, the crystal solidification mechanism compensates for substrate deviation, and the visual detection mechanism provides accurate feedback.
It simplifies the operating logic of the solid crystal mechanism, improves the accuracy and stability of the patch, expands the application range, and is suitable for chip fitting scenarios with different accuracy and speed requirements, improving the reliability and space utilization of the equipment.
Smart Images

Figure CN120376459A_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to the technical field of semiconductor packaging, and particularly to a die bonder. Background Art
[0002] As a key device for semiconductor back-end packaging, the main function of a die bonder is to accurately pick up wafers from a wafer tray and mount them at designated positions on a substrate, and achieve their permanent fixation through conductive adhesive or eutectic soldering. Precision is the most critical performance index of high-end die bonders, and it is also the focus and difficulty of continuous research and development and continuous breakthroughs in the field of semiconductor packaging.
[0003] Currently, die bonders on the market generally use a single actuator to complete the actions of picking up and bonding the die. At the same time, in order to improve the placement accuracy, this actuator also needs to be responsible for compensating for the position deviation of the wafer and the position deviation of the substrate. However, this design makes the actions of this actuator cumbersome and the operation logic complex. When the physical properties (such as strength, stiffness, etc.) of the material are limited, it is difficult to maintain high-precision operation for a long time, and ultimately it has an adverse impact on the placement accuracy and stability of the die bonder. Summary of the Invention
[0004] The present invention aims to provide a die bonder, which realizes further improvement in terms of accuracy and stability by optimizing the operation logic of the actuator and the reasonable layout.
[0005] To achieve the above object, the present invention provides a die bonder, which is provided with a die bonding station, a transfer station, and a die picking station arranged in sequence along a first horizontal direction, and includes a carrier mechanism, a transfer mechanism, a die bonding mechanism, a die picking mechanism, a die feeding mechanism, and a vision inspection mechanism.
[0006] The carrier mechanism includes a carrier track for conveying the substrate, and the carrier track extends along a second horizontal direction and passes through the die bonding station.
[0007] The transfer mechanism includes a transfer platform for carrying wafers in the transfer station.
[0008] The die bonding mechanism includes a die bonding nozzle and a die bonding driving unit. The die bonding nozzle is used for adsorbing wafers, and the die bonding driving unit is arranged to drive the die bonding nozzle to rotate around its own axis, move up and down in the vertical direction, and move on a horizontal plane higher than the carrier track and the transfer platform and travel back and forth between the transfer station and the die bonding station.
[0009] The crystal picking mechanism includes a crystal picking nozzle and a crystal picking driving unit. The crystal picking nozzle is used to adsorb the wafer, and the crystal picking driving unit is configured to drive the crystal picking nozzle to rotate around its own axis, move up and down in the vertical direction, and move in a horizontal plane above the carrier track and the transfer platform and travel back and forth between the crystal picking station and the transfer station.
[0010] The crystal feeding mechanism includes a crystal feeding platform and a crystal feeding driving unit. The crystal feeding platform is used to carry the wafer and is lower than the transfer platform. The crystal feeding driving unit is configured to drive the crystal feeding platform to move in a horizontal plane and selectively pass through the crystal picking station.
[0011] The vision inspection mechanism includes a die bonding camera and a crystal picking camera. The die bonding camera is arranged above the die bonding station and is used to photograph the die bonding station from top to bottom. The crystal picking camera is arranged above the crystal picking station and is used to photograph the crystal picking station from top to bottom.
[0012] Based on the above structure, the die bonding modes of the die bonder include:
[0013] The first die bonding mode: the transfer platform is at the transfer station. The crystal feeding driving unit drives the crystal feeding platform to move through the crystal picking station to supply the wafer. The crystal picking driving unit drives the crystal picking nozzle to pick up the wafer in the wafer carried by the crystal feeding platform at the crystal picking station and place it on the transfer platform at the transfer station. The die bonding driving unit drives the die bonding nozzle to pick up the wafer carried by the transfer platform at the transfer station and bond it to the substrate at the die bonding station.
[0014] In the first die bonding mode, before the crystal picking nozzle picks up the wafer, the crystal picking driving unit compensates for the displacement deviation of the wafer to be picked up by driving the crystal picking nozzle to move in a horizontal plane according to the photo of the wafer carried by the crystal feeding platform taken by the crystal picking camera, and after the crystal picking nozzle picks up the wafer, compensates for the angular deviation of the picked-up wafer by driving the crystal picking nozzle to rotate around its own axis; before bonding the wafer, the die bonding driving unit compensates for the displacement deviation of the substrate to be patched by driving the die bonding nozzle to move in a horizontal plane according to the photo of the substrate at the die bonding station taken by the die bonding camera, and compensates for the angular deviation of the substrate to be patched by driving the die bonding nozzle to rotate around its own axis before bonding the wafer.
[0015] Compared with traditional die bonders and die bonding modes, the die bonder and the first die bonding mode provided by the present invention divide the die picking process and the die bonding process into two independent steps, and are respectively executed by the die picking mechanism and the die bonding mechanism. Since the position of the transfer platform remains stable after calibration and is not likely to cause new displacement deviation and angular deviation of the wafer, after the die picking mechanism compensates for the wafer with position deviation, the die bonding mechanism is only mainly responsible for compensating the position deviation of the substrate and attaching the wafer to the substrate. Such a design effectively simplifies the operation logic and actions of the die bonding mechanism, enabling it to maintain high-precision operation for a long time even when the physical properties (such as strength, stiffness, etc.) of the material are limited, thereby greatly improving the chip mounting accuracy and stability of the die bonder.
[0016] In addition, different from the cameras in the prior art that need to move between multiple stations for shooting, the die bonding camera and the die picking camera both remain stationary during operation and do not move with the die bonding nozzle and the die picking nozzle. They respectively shoot the corresponding stations from fixed positions, so they have higher stability. This design significantly improves the accuracy of the feedback positioning information, thus effectively guaranteeing the operation accuracy of the die bonder.
[0017] Furthermore, although the die picking mechanism has compensated for the wafer with displacement deviation and / or angular deviation supplied by the die supply mechanism during the process of picking and transferring the wafer, and the position of the transfer platform is stable, other factors in the environment may still affect the position of the wafer carried by the transfer platform, such as the vibration generated by the high-speed operation of the die bonder. Therefore, there is still a certain possibility that the wafer carried by the transfer platform has displacement deviation and angular deviation.
[0018] To overcome the above deficiencies, improve the reliability of the die bonder, and ensure that the wafer picked up by the die bonding mechanism has no displacement deviation and angular deviation before attachment. The vision detection mechanism further includes a transfer camera disposed above the transfer station, which is used to shoot the transfer station from top to bottom.
[0019] Correspondingly, in the first die bonding mode, the die bonding drive unit also compensates for the displacement deviation of the wafer to be picked up by driving the die bonding nozzle to move in the horizontal plane before the die bonding nozzle picks up the wafer, and compensates for the angular deviation of the picked-up wafer by driving the die bonding nozzle to rotate around its own axis after the die bonding nozzle picks up the wafer, according to the photo of the wafer carried by the transfer platform taken by the transfer camera.
[0020] The advantage of such a design is that the die bonding mechanism also has the ability to compensate for the displacement deviation and angular deviation of the wafer, and can serve as the last line of defense to ensure that there is no displacement deviation and angular deviation of the wafer before it is bonded to the substrate, thereby further improving the reliability of the die bonder. It should be noted that in most cases, the wafers carried by the transfer platform do not have displacement deviation and / or angular deviation. Therefore, in the first die bonding mode, the die bonding mechanism only needs to perform the actions of compensating for the displacement deviation and / or angular deviation of the wafer in very few cases. This means that in most cases, the operating logic of the die bonding mechanism remains simple, the action change frequency remains normal, and it can maintain high-precision operation for a long time.
[0021] Similar to the die bonding camera and the wafer picking camera, the transfer camera does not move with the die bonding nozzle and the wafer picking nozzle, and has high shooting stability, so that the feedback positioning information also has high accuracy.
[0022] Furthermore, the transfer platform is arranged to be able to adjust its position by horizontal movement and can stop at least at two positions, namely inside the transfer station and outside the transfer station. In the first die bonding mode, the transfer platform is placed inside the transfer station.
[0023] The crystal supply driving unit is also arranged to be able to drive the crystal supply platform to selectively pass through the transfer station.
[0024] Based on the above structure, the die bonding modes of the die bonder also include:
[0025] The second die bonding mode: the transfer platform is placed outside the transfer station, the crystal supply driving unit drives the crystal supply platform to move through the transfer station to supply wafers, and the die bonding driving unit drives the die bonding nozzle to pick up the wafers in the wafers carried by the crystal supply platform at the transfer station and bond them to the substrate at the die bonding station.
[0026] In the second die bonding mode, the die bonding driving unit compensates for the displacement deviation of the wafer to be picked up by driving the die bonding nozzle to move horizontally before the die bonding nozzle picks up the wafer according to the photo of the wafer carried by the crystal supply platform taken by the transfer camera, and also compensates for the displacement deviation of the substrate to be patched by driving the die bonding nozzle to move horizontally before bonding the wafer according to the photo of the substrate at the die bonding station taken by the die bonding camera, and compensates for the angular deviation of the substrate to be patched by driving the die bonding nozzle to rotate around its own axis before bonding the wafer.
[0027] Compared with the first die bonding mode, the second die bonding mode is more suitable for wafer bonding scenarios that have higher requirements for the placement speed and relatively loose requirements for accuracy. The two die bonding modes expand the application range of the die bonder provided by the present invention, enabling it to be applicable to wafers with more different requirements. Technicians can change the position of the transfer platform and the crystal supply position of the crystal supply mechanism according to the specific requirements of the placement operation, and select whether the die bonder performs the placement operation in the first die bonding mode or the second die bonding mode.
[0028] In most cases, large-size wafers have more stringent requirements for placement accuracy, while small-size wafers have relatively loose requirements. Therefore, the first die bonding mode is mainly applicable to large-size wafers, and the second die bonding mode is mainly applicable to small-size wafers.
[0029] Furthermore, the transfer mechanism further includes a first adjustment track extending in any horizontal direction and passing through the transfer station, and the transfer platform is installed on the first adjustment track and can slide along it. Such a design enables the transfer platform to seamlessly switch between the two die bonding modes without disassembly, which not only simplifies the operation process but also provides a hardware basis for automatic switching. At the same time, due to the high precision and stability of the track structure, even though the position of the transfer platform is adjustable, it can still accurately position and remain stable at the predetermined position, thereby effectively improving the placement accuracy of the die bonding mechanism in the first die bonding mode.
[0030] Furthermore, since the angular deviation of small-size wafers is not easily captured by the transfer camera located above the transfer station, the vision detection mechanism further includes a bottom camera, which is disposed below the moving path of the die bonding suction nozzle traveling between the transfer station and the die bonding station, and is used to photograph the die bonding suction nozzle passing above it from bottom to top.
[0031] Correspondingly, in the second die bonding mode, the die bonding drive unit also compensates for the angular deviation of the picked-up wafer by driving the die bonding suction nozzle to rotate around its own axis according to the photo of the wafer picked up by the die bonding suction nozzle taken by the bottom camera.
[0032] Furthermore, the die bonding drive unit is configured to drive the die bonding suction nozzle to travel back and forth between the transfer station and the die bonding station along the first direction, and the crystal picking drive unit is configured to drive the crystal picking suction nozzle to travel back and forth between the crystal picking station and the transfer station along the first direction. That is, the die bonding suction nozzle and the crystal picking suction nozzle respectively perform reciprocating linear motions between the two stations, so that the travel is shorter, the operating efficiency is higher, the stability is better, and thus it is beneficial to the improvement of accuracy.
[0033] Furthermore, although the transfer camera takes pictures of the transfer station in both die bonding modes disclosed in the present invention, the focusing objects are different. In the first die bonding mode, the focusing object of the transfer camera is the wafer carried by the transfer platform. In the second die bonding mode, the focusing object of the transfer camera is the wafer carried by the crystal supply platform. Also, since the transfer platform and the crystal supply platform are not at the same horizontal height, and the former is higher than the latter. Therefore, if the transfer camera remains at the same height as in the first die bonding mode in the second die bonding mode, it will be difficult to ensure the clarity of the captured pictures and the accuracy of the feedback positioning information.
[0034] To address the above defects, the transfer camera is configured to be adjustable in position by moving up and down, and can at least stay at two positions, namely the high position and the low position, both of which are higher than the transfer station. In the first die bonding mode, the transfer camera is placed at the high position for taking pictures of the wafer carried by the transfer platform from top to bottom. In the second die bonding mode, the transfer camera is placed at the low position for taking pictures of the wafer carried by the crystal supply platform from top to bottom.
[0035] Furthermore, the vision detection mechanism further includes a second adjustment rail extending in the vertical direction, which is provided beside the transfer station. The transfer camera is mounted on the second adjustment rail and can slide along it. Such a design enables the transfer camera to smoothly switch positions between the high position and the low position without disassembly, which not only simplifies the operation process but also provides a hardware basis for automatic position switching. At the same time, due to the high precision and stability of the rail structure, even though the position of the transfer camera is adjustable, it can still accurately locate and remain stable at the predetermined position, thus ensuring the shooting effect.
[0036] Furthermore, the die bonder provided by the present invention includes a first main light source. To adapt to the compact layout of the die bonding station, the transfer station, and the crystal picking station, the first main light source adopts an integrated design and is provided between the areas where the die bonding station, the transfer station, and the crystal picking station are located and the areas where the die bonding camera, the transfer camera, and the crystal picking camera are located, so as to simultaneously provide illumination for the above three stations.
[0037] The first main light source includes a first main lamp holder, a first prism and a first main lamp body provided on the first main lamp holder. The first prism is disposed on the optical axes of the die bonding camera, the transfer camera, and the crystal picking camera. At least part of the light of the first main lamp body is refracted downward by the first prism and covers the die bonding station, the transfer station, and the crystal picking station. Based on this structure, the optical axis of the first main lamp body is nearly coaxial with the optical axes of the above three cameras, thereby achieving effective illumination in the true sense, improving the light utilization rate, avoiding the ineffective stacking of light sources, and reducing energy consumption.
[0038] Further, the first main lamp holder is provided with a first accommodation cavity and a first mounting hole that penetrates up and down. The first mounting hole is disposed beside the first accommodation cavity and the two are connected. The optical axes of the die bonding camera, the transfer camera, and the crystal picking camera all pass through the first mounting hole. The first prism is disposed in the first mounting hole. The first main lamp body is disposed in the first accommodation cavity. At least part of the light of the first main lamp body is refracted by the first prism and then exits downward from the lower end of the first mounting hole, covering the die bonding station, the transfer station, and the crystal picking station.
[0039] Further, the first mounting hole includes a first hole position, a second hole position, and a third hole position arranged in sequence along a first horizontal direction. The first hole position is disposed below the die bonding camera and the optical axis of the die bonding camera passes through it. The second hole position is disposed below the transfer camera and the optical axis of the transfer camera passes through it. The third hole position is disposed below the crystal picking camera and the optical axis of the crystal picking camera passes through it.
[0040] The first prism includes a first lens body, a second lens body, and a third lens body. The first lens body is disposed in the first hole position, the second lens body is disposed in the second hole position, and the third lens body is disposed in the third hole position.
[0041] At least part of the light of the first main lamp body is refracted by the first lens body and then exits downward from the lower end of the first hole position, covering the die bonding station. At least part of the light of the first main lamp body is refracted by the second lens body and then exits downward from the lower end of the second hole position, covering the transfer station. At least part of the light of the first main lamp body is refracted by the third lens body and then exits downward from the lower end of the third hole position, covering the crystal picking station.
[0042] Further, the first main light source further includes a second main lamp body, which is disposed at the bottom of the first main lamp holder, and its light covers the die bonding station, the transfer station, and the crystal picking station. The second main lamp body and the first main lamp body jointly provide illumination for the die bonding station, the transfer station, and the crystal picking station to ensure sufficient light.
[0043] Furthermore, considering that the die bonding station and the crystal picking station are key stations affecting the chip mounting accuracy, it is necessary to ensure that the photos taken by the die bonding camera and the crystal picking camera are clear and distinct. The die bonder provided by the present invention further includes a first auxiliary light source and a second auxiliary light source, which respectively reinforce the illumination of the die bonding station and the crystal picking station from the side.
[0044] The first auxiliary light source includes a first auxiliary lamp holder and a first auxiliary lamp body. The first auxiliary lamp holder supports the first auxiliary lamp body at a position close to the die bonding station and higher than the carrier track, and the first auxiliary lamp body irradiates the die bonding station obliquely downward.
[0045] The second auxiliary light source includes a second auxiliary lamp holder and a second auxiliary lamp body. The second auxiliary lamp holder mounts the second auxiliary lamp body at a position close to the crystal picking station and higher than the crystal supply platform, and the second auxiliary lamp body irradiates the crystal picking station obliquely downward.
[0046] Furthermore, the die bonder provided by the present invention is also provided with a glue painting station, which is arranged on the conveying path of the carrier track and upstream of the die bonding station. That is, the substrate first passes through the glue painting station and then through the die bonding station.
[0047] Corresponding to the glue painting station, the die bonder further includes a glue painting mechanism. The glue painting mechanism includes a glue painting driving unit and a glue painting head. The glue painting driving unit is configured to drive the glue painting head to move on a horizontal plane higher than the carrier track and pass through the glue painting station, and the glue painting head is used to paint glue on the substrate at the glue painting station.
[0048] The vision inspection mechanism further includes a glue painting camera arranged above the glue painting station, which is used to take pictures of the glue painting station from top to bottom to locate the chip mounting points to be painted with glue on the substrate. Like the other cameras mentioned above, the glue painting camera does not move with the glue painting head, so the shooting is stable and the feedback positioning information is accurate.
[0049] Based on the above structure, when the substrate reaches the glue painting station, the glue painting driving unit drives the glue painting head to move to the glue painting station and be directly opposite to the chip mounting points to be painted with glue on the substrate. During this process, if there is a displacement deviation of the substrate to be painted with glue, the glue painting driving unit drives the glue painting head to move on the horizontal plane according to the photo of the substrate at the glue painting station taken by the glue painting camera to compensate for this displacement deviation.
[0050] Furthermore, in order to provide illumination for the glue painting station, the die bonder provided by the present invention further includes a second main light source with a structure almost the same as that of the first main light source, which is arranged between the glue painting station and the glue painting camera.
[0051] The second main light source includes a second main lamp holder, a second prism and a third main lamp body provided on the second main lamp holder. The second prism is provided on the optical axis of the glue painting camera. At least part of the light of the third main lamp body is refracted downward by the second prism and covers the glue painting station. That is, the optical axis of the third main lamp body is nearly coaxial with the optical axis of the glue painting camera, so effective illumination is achieved, the light utilization rate is improved, and the energy consumption is reduced.
[0052] Further, the second main lamp holder is provided with a second accommodation cavity and a second mounting hole that penetrates up and down. The second mounting hole is provided beside the second accommodation cavity and the two are connected. The optical axis of the glue painting camera passes through the second mounting hole. The second prism is provided in the second mounting hole. The third main lamp body is provided in the second accommodation cavity. At least part of the light of the third main lamp body is refracted by the second prism and then shoots downward from the lower end of the second mounting hole and covers the glue painting station.
[0053] Further, the second main light source further includes a fourth main lamp body, which is provided at the bottom of the second main lamp holder, and its light covers the glue painting station. The fourth main lamp body and the third main lamp body jointly provide illumination for the glue painting station to ensure sufficient illumination.
[0054] Further, in order to make the photos taken by the glue painting camera clearer and more distinct, the die bonder provided by the present invention further includes a third auxiliary light source to reinforce the illumination of the glue painting station from the side. The third auxiliary light source includes a third auxiliary lamp holder and a third auxiliary lamp body. The third auxiliary lamp holder supports the third auxiliary lamp body at a position close to the glue painting station and higher than the carrier track. The third auxiliary lamp body irradiates the glue painting station obliquely downward.
[0055] Further, the transfer platform is provided with negative pressure suction holes for adsorbing the carried wafers to minimize the possibility of displacement deviation and angular deviation of the wafers on the transfer platform.
[0056] Further, in view of the fact that the substrate has multiple chip mounting points and there are various size specifications, in order to ensure that all chip mounting points on each specification of the substrate can be clearly photographed, a plurality of die bonding cameras are provided, which are arranged at equal intervals along the first horizontal direction above the die bonding station, and the situation of missed shooting and defocusing is avoided by expanding the shooting range. Or, only one die bonding camera is provided, which is set to be adjustable by moving along the first horizontal direction. When it is necessary to photograph certain chip mounting points, the die bonding camera is moved above them for shooting, and the problems of missed shooting and defocusing are solved by targeted shooting.
[0057] Furthermore, in order to make the layout of the die bonding station, the transfer station, and the crystal picking station more compact, the carrier track is designed to be higher than the crystal supply platform, and an avoidance space is provided below the carrier track for the crystal supply platform to enter or pass through when it moves. In this way, even if the die bonding station, the transfer station, and the crystal picking station are closely adjacent in sequence, the carrier track and the crystal supply platform can be made non-interfering with each other, thereby significantly improving the space utilization rate of the die bonder, making its structure more compact and its volume more reasonable.
[0058] Compared with the prior art, the die bonder provided by the present invention has the following beneficial effects:
[0059] First, in the first die bonding mode, the crystal picking process and the die bonding process are respectively executed by the crystal picking mechanism and the die bonding mechanism. Since the position of the transfer platform remains stable after calibration and is not likely to cause new displacement deviation and angular deviation of the wafer, after the crystal picking mechanism compensates for the position deviation of the wafer with position deviation, the die bonding mechanism is only mainly responsible for compensating the position deviation of the substrate and attaching the wafer to the substrate. Such a design effectively simplifies the operation logic and actions of the die bonding mechanism, enabling it to maintain high-precision operation for a long time even when the physical properties (such as strength, stiffness, etc.) of the material are limited, thereby greatly improving the chip mounting accuracy and stability of the die bonder.
[0060] Second, in the first die bonding mode, the die bonding mechanism also has the ability to compensate for the displacement deviation and angular deviation of the wafer, and can serve as the last line of defense to ensure that there is no displacement deviation and angular deviation of the wafer before it is attached to the substrate, thereby further improving the reliability of the die bonder.
[0061] Third, the first die bonding mode is suitable for wafers with high requirements for chip mounting accuracy and slow peeling speed, while the second die bonding mode is suitable for wafers with high requirements for chip mounting speed and fast peeling speed. The two die bonding modes expand the application range of the die bonder, enabling it to be applicable to more wafers with different requirements. Technicians can change the position of the transfer platform and the crystal supply position of the crystal supply mechanism according to the specific requirements of the chip mounting work, and select whether the die bonder performs the chip mounting operation in the first die bonding mode or the second die bonding mode.
[0062] Fourth, the die bonding camera, the transfer camera, the crystal picking camera, the bottom camera, and the glue painting camera all remain stationary during operation and do not move with components such as the crystal picking suction nozzle, the die bonding suction nozzle, and the glue painting head. They each take pictures of the corresponding station or target from a fixed position, with higher stability, thereby significantly improving the accuracy of the feedback positioning information and effectively ensuring the operation accuracy of the die bonder.
[0063] Fifthly, the layout design of the die bonding station, transfer station, and crystal picking station is compact. By reasonably utilizing the vertical space, the execution mechanisms such as the die bonding mechanism, transfer mechanism, crystal picking mechanism, crystal supply mechanism, and vision inspection mechanism can be efficiently configured. Such a layout not only shortens the moving distance of the die bonding nozzle and the crystal picking nozzle, reduces the risk of the decline in their operating accuracy, but also significantly reduces the volume of the die bonder, promoting the development of the equipment towards miniaturization and integration.
[0064] Sixthly, the first main light source adopts an integrated design and can provide illumination for the die bonding station, transfer station, and crystal picking station simultaneously, enabling the die bonder to further meet the compact design requirements. In addition, the first main light source and the second main light source can provide light coaxial with the corresponding cameras, which not only enhances the illumination effect, but also improves the light utilization rate, avoids the ineffective stacking of light sources, and reduces the energy consumption. BRIEF DESCRIPTION OF THE DRAWINGS
[0065] Figure 1 Schematic diagram of the "displacement deviation" of the wafer in a specific embodiment of the present invention;
[0066] Figure 2 Schematic diagram of the "angle deviation" of the wafer in a specific embodiment of the present invention;
[0067] Figure 3 Schematic diagram of the die bonder stations in a specific embodiment of the present invention;
[0068] Figure 4 Axonometric view one of the die bonder in a specific embodiment of the present invention;
[0069] Figure 5 Axonometric view two of the die bonder in a specific embodiment of the present invention;
[0070] Figure 6 For Figure 4 Enlarged view of area I in
[0071] Figure 7 For Figure 5 Enlarged view of area II in
[0072] Figure 8 For Figure 5 Enlarged view of area III in
[0073] Figure 9 Schematic diagram of the structure of the first main light source, die bonding camera, transfer camera, and crystal picking camera in a specific embodiment of the present invention;
[0074] Figure 10 Schematic diagram of the structure of the first main light source in a specific embodiment of the present invention.
[0075] In the figure: 100, die bonding station; 200, transfer station; 300, crystal picking station; 400, glue dispensing station; 1, frame; 2, carrier mechanism; 201, carrier track; 3, transfer mechanism; 301, transfer platform; 302, first adjustment track; 4, die bonding mechanism; 401, die bonding suction nozzle; 402, die bonding drive unit; 5, crystal picking mechanism; 501, crystal picking suction nozzle; 502, crystal picking drive unit; 6, crystal supply mechanism; 601, crystal supply platform; 602, crystal supply drive unit; 7, vision inspection mechanism; 701, die bonding camera; 702, crystal picking camera; 703, transfer camera; 704, second adjustment track; 705, glue dispensing camera; 8, first main light source; 801, first main lamp holder; 8011, first hole position; 8012, second hole position; 8013, third hole position; 802, first prism; 8021, first lens body; 8022, second lens body; 8023, third lens body; 803, second main lamp body; 9, second auxiliary light source; 901, second auxiliary lamp holder; 902, second auxiliary lamp body; 10, glue dispensing mechanism; 1001, glue dispensing drive unit; 11, second main light source; 1101, second main lamp holder; 1100, second mounting hole; 1102, second prism; 1103, fourth main lamp body; 12, third auxiliary light source; 1201, third auxiliary lamp holder; 1202, third auxiliary lamp body. Detailed implementation mode
[0076] The present invention will be described in more detail below with reference to specific embodiments. Those skilled in the art should understand that these descriptions only list some specific embodiments of the present invention and have no limitation on the present invention and its protection scope.
[0077] In order to easily describe the positional relationship between one component and another shown in the drawings of the specification, the present text will use spatial relative terms, such as "above", "below", "upper part", "lower part", "top", "bottom" and similar terms. It can be understood that the spatial relative terms are intended to cover different orientations of the device during use and operation in addition to the orientations depicted in the drawings. For example, if the device in the drawing is inverted, the component described as "above" other components will be reoriented to "below" other components. In addition, the first horizontal direction X in the present text is defined as two-way, similar to the front-back direction and the left-right direction, and does not limit a unique reference line. That is, if two components both extend along the first horizontal direction X, it does not mean that they must be on the same straight line. The same is true for the second horizontal direction Y.
[0078] Terms such as "first" and "second" in this text are not intended to emphasize the quantity, order, or importance of the components referred to. Unless otherwise specified, terms such as "installed", "connected", and "joined" in this text should be understood in a broad sense. For example, it can be a fixed connection or an integral connection, or it can be a detachable connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium. For those skilled in the art, the specific meanings of the above terms in this text should be understood according to the specific circumstances. In addition, in this text, "greater than", "less than", "exceeding", etc. are understood not to include the number itself; "above", "below", "within", etc. are understood to include the number itself. The meaning of "several" is one or more, and the meaning of "multiple" is two or more.
[0079] It should be clear that in the present invention, the "workstation" specifically refers to the execution location of a certain process, which is essentially a three-dimensional space, and its size is determined by the execution components participating in the process. Specifically, the "die bonding workstation 100" is the execution location of the process of bonding the picked-up wafer to the substrate by the die bonding nozzle 401. Its lower boundary is slightly lower than the position of the substrate on the carrier track 201, its upper boundary is slightly higher than the position before the die bonding nozzle 401 descends, and the four peripheral boundaries are at least large enough to enclose the substrate to be pasted and the die bonding nozzle 401. The "wafer picking workstation 300" is the execution location of the process of picking up the wafer from the wafer supply platform 601 by the wafer picking nozzle 501. Its lower boundary is slightly lower than the position of the wafer on the wafer supply platform 601, its upper boundary is slightly higher than the position before the wafer picking nozzle 501 descends, and the four peripheral boundaries are at least large enough to enclose the wafer to be picked up and the wafer picking nozzle 501. The "transfer workstation 200" is the execution location of the three processes of the wafer picking nozzle 501 placing the picked-up wafer on the transfer platform 301, the die bonding nozzle 401 picking up the wafer from the transfer platform 301, and the die bonding nozzle 401 picking up the wafer from the wafer supply platform 601. Its lower boundary is slightly lower than the position of the wafer on the wafer supply platform 601, its upper boundary is slightly higher than the higher of the position before the wafer picking nozzle 501 descends and the position before the die bonding nozzle 401 descends, and the four peripheral boundaries are at least large enough to enclose the wafer to be picked up, the wafer picking nozzle 501, and the die bonding nozzle 401.
[0080] It should be noted that in the present invention, the "displacement deviation" of the wafer refers to the horizontal offset between the actual position and the predetermined position of the wafer within the workstation, as Figure 1 shown. And the "angle deviation" of the wafer refers to the deflection around its center between the actual position and the predetermined position of the wafer within the workstation, as Figure 2As shown. These two position deviations of the wafer are mainly caused by actions such as film expansion and lifting of the crystal supply mechanism 6 or other reasons. For each wafer, these two position deviations may occur simultaneously or only one of them may exist. Similarly, the "displacement deviation" and "angle deviation" of the substrate are also similar in definition, and their causes are mainly related to processes such as substrate loading and transportation.
[0081] Refer to Figure 1 and Figure 2 Refer to
[0082] Refer to Figure 3 and Figure 7 In the following, the above-mentioned actuators and their corresponding functions will be described.
[0083] The carrier mechanism 2 includes a carrier track 201 for transporting the substrate. The carrier track 201 extends along the second horizontal direction Y and passes through the die bonding station 100.
[0084] The transfer mechanism 3 includes a transfer platform 301, which is used to carry the wafer in the transfer station 200. In order to be compatible with the first die bonding mode and the second die bonding mode, the transfer platform 301 is set to be adjustable in position by horizontal movement and can stop at least at two positions, inside and outside the transfer station 200. In the first die bonding mode, the transfer platform 301 is placed inside the transfer station 200 to carry the wafer; in the second die bonding mode, the transfer platform 301 is placed outside the transfer station 200 and does not participate in the work.
[0085] In this embodiment, the transfer mechanism 3 further includes a first adjustment track 302 that extends along the second horizontal direction Y and passes through the transfer station 200. The transfer platform 301 is installed on the first adjustment track 302 and can slide along it. By moving the transfer platform 301, the position of the transfer platform 301 can be adjusted so that it is inside the transfer station 200 in the first die bonding mode and outside the transfer station 200 in the second die bonding mode. This design enables the transfer platform 301 to seamlessly switch between the two die bonding modes without disassembly, which not only simplifies the operation process but also provides a hardware basis for automatic switching. At the same time, due to the high precision and stability of the track structure, even though the position of the transfer platform 301 is adjustable, it can still accurately position and remain stable at the predetermined position.
[0086] The die bonding mechanism 4 includes a die bonding suction nozzle 401 and a die bonding driving unit 402. The die bonding suction nozzle 401 is used to adsorb the wafer. The die bonding driving unit 402 is configured to drive the die bonding suction nozzle 401 to rotate about its own axis, move up and down in the vertical direction Z, and move on a horizontal plane higher than the carrier track 201 and the transfer platform 301 and travel back and forth between the transfer station 200 and the die bonding station 100.
[0087] The wafer picking mechanism 5 includes a wafer picking suction nozzle 501 and a wafer picking driving unit 502. The wafer picking suction nozzle 501 is used to adsorb the wafer. The wafer picking driving unit 502 is configured to drive the wafer picking suction nozzle 501 to rotate about its own axis, move up and down in the vertical direction Z, and move on a horizontal plane higher than the carrier track 201 and the transfer platform 301 and travel back and forth between the wafer picking station 300 and the transfer station 200.
[0088] The wafer feeding mechanism 6 includes a wafer feeding platform 601 and a wafer feeding driving unit 602. The wafer feeding platform 601 is used to carry the wafer and is lower than the transfer platform 301. The wafer feeding driving unit 602 is configured to drive the wafer feeding platform 601 to move on a horizontal plane and selectively pass through one of the wafer picking station 300 and the transfer station 200. In the first die bonding mode, the wafer feeding driving unit 602 drives the wafer feeding platform 601 to move through the wafer picking station 300; in the second die bonding mode, the wafer feeding driving unit 602 drives the wafer feeding platform 601 to move through the transfer station 200.
[0089] The vision inspection mechanism 7 includes a die bonding camera 701, a wafer picking camera 702, a transfer camera 703, and a bottom camera. The die bonding camera 701 is disposed above the die bonding station 100 and is used to photograph the die bonding station 100 from top to bottom; whether in the first die bonding mode or the second die bonding mode, the focusing object of the die bonding camera 701 is the substrate at the die bonding station 100. The wafer picking camera 702 is disposed above the wafer picking station 300 and is used to photograph the wafer picking station 300 from top to bottom; in the first die bonding mode, the focusing object of the wafer picking camera 702 is the wafer carried by the wafer feeding platform 601. The transfer camera 703 is disposed above the transfer station 200 and is used to photograph the transfer station 200 from top to bottom; in the first die bonding mode, the focusing object of the transfer camera 703 is the wafer carried by the transfer platform 301; in the second die bonding mode, the focusing object of the transfer camera 703 is the wafer carried by the wafer feeding platform 601. The bottom camera is disposed below the moving path of the die bonding suction nozzle 401 traveling back and forth between the transfer station 200 and the die bonding station 100 and is used to photograph the die bonding suction nozzle 401 passing above it from bottom to top; in the second die bonding mode, the focusing object of the bottom camera is the wafer already picked up by the die bonding suction nozzle 401.
[0090] The first die bonding mode of this die bonder is as follows: The transfer platform 301 is placed within the transfer station 200. The crystal supply driving unit 602 drives the crystal supply platform 601 to move past the crystal picking station 300 to supply wafers. The crystal picking driving unit 502 drives the crystal picking nozzle 501 to pick up the wafers in the wafer carried by the crystal supply platform 601 at the crystal picking station 300 and place them on the transfer platform 301 at the transfer station 200. The die bonding driving unit 402 drives the die bonding nozzle 401 to pick up the wafers carried by the transfer platform 301 at the transfer station 200 and bond them to the substrate at the die bonding station 100.
[0091] In the first die bonding mode, before the crystal picking nozzle 501 picks up the wafers, the crystal picking driving unit 502 compensates for the displacement deviation of the wafers to be picked up by driving the crystal picking nozzle 501 to move horizontally according to the photo of the wafer carried by the crystal supply platform 601 taken by the crystal picking camera 702, and after the crystal picking nozzle 501 picks up the wafers, compensates for the angular deviation of the picked-up wafers by driving the crystal picking nozzle 501 to rotate around its own axis. Before the die bonding nozzle 401 picks up the wafers, the die bonding driving unit 402 compensates for the displacement deviation of the wafers to be picked up by driving the die bonding nozzle 401 to move horizontally according to the photo of the wafers carried by the transfer platform 301 taken by the transfer camera 703, and after the die bonding nozzle 401 picks up the wafers, compensates for the angular deviation of the picked-up wafers by driving the die bonding nozzle 401 to rotate around its own axis. The die bonding driving unit 402 also compensates for the displacement deviation of the substrate to be pasted by driving the die bonding nozzle 401 to move horizontally before bonding the wafers according to the photo of the substrate at the die bonding station 100 taken by the die bonding camera 701, and compensates for the angular deviation of the substrate to be pasted by driving the die bonding nozzle 401 to rotate around its own axis before bonding the wafers.
[0092] Compared with the prior art, in the first die bonding mode of this embodiment, the crystal picking process and the die bonding process are divided into two independent steps, and are respectively executed by the crystal picking mechanism 5 and the die bonding mechanism 4. Since the position of the transfer platform 301 remains stable after calibration and is not likely to cause new displacement deviation and angular deviation of the wafers, after the crystal picking mechanism 5 compensates for the position deviation of the wafers, the die bonding mechanism 4 is only mainly responsible for compensating the position deviation of the substrate and bonding the wafers to the substrate. Such a design effectively simplifies the operation logic and actions of the die bonding mechanism 4, enabling it to maintain high-precision operation for a long time even when the physical properties (such as strength, stiffness, etc.) of the materials are limited, thereby greatly improving the die bonding accuracy and stability of this die bonder. In addition, the die bonding mechanism 4 also has the ability to compensate for the displacement deviation and angular deviation of the wafers, which can serve as the last line of defense to ensure that there is no displacement deviation and angular deviation of the wafers before they are bonded to the substrate, thereby further improving the reliability of this die bonder.
[0093] Exemplarily, in the first die bonding mode, the die picking and die bonding processes of the die bonder are roughly as follows (taking the bonding of one wafer as an example):
[0094] S1. The crystal supply platform 601 carries the wafer and supplies the wafer at the die picking station 300;
[0095] S2. The die picking driving unit 502 drives the die picking nozzle 501 to move to the die picking station 300 and face the wafer to be picked up. During this process, if there is a displacement deviation of the wafer to be picked up, the die picking driving unit 502 drives the die picking nozzle 501 to move horizontally according to the photo of the wafer carried by the crystal supply platform 601 taken by the die picking camera 702 to compensate for this displacement deviation;
[0096] S3. The die picking driving unit 502 drives the die picking nozzle 501 to sequentially perform the actions of moving downward, adsorbing the wafer, and moving upward at the die picking station 300, so as to pick up the wafer from the crystal supply platform 601;
[0097] S4. The die picking driving unit 502 drives the die picking nozzle 501 to move to the transfer station 200 and reach above the transfer platform 301. During this process, if there is an angular deviation of the picked-up wafer before being picked up, the die picking driving unit 502 drives the die picking nozzle 501 to rotate around its own axis according to the photo of the wafer carried by the crystal supply platform 601 taken by the die picking camera 702 to compensate for this angular deviation;
[0098] S5. The die picking driving unit 502 drives the die picking nozzle 501 to sequentially perform the actions of moving downward, placing the wafer, and moving upward, so as to place the picked-up wafer on the transfer platform 301;
[0099] S6. The die bonding driving unit 402 drives the die bonding nozzle 401 to move to the transfer station 200 and face the wafer carried by the transfer platform 301. During this process, if there is a displacement deviation of the wafer carried by the transfer platform 301, the die bonding driving unit 402 drives the die bonding nozzle 401 to move horizontally according to the photo of the wafer carried by the transfer platform 301 taken by the transfer camera 703 to compensate for this displacement deviation;
[0100] S7. The die bonding driving unit 402 drives the die bonding nozzle 401 to sequentially perform the actions of moving downward, adsorbing the wafer, and moving upward at the transfer station 200, so as to pick up the wafer from the transfer platform 301;
[0101] S8. The die bonding driving unit 402 drives the die bonding nozzle 401 to move to the die bonding station 100 and face the point on the substrate where the chip is to be pasted. During this process, if there is an angular deviation of the picked-up chip before being picked up, the die bonding driving unit 402 drives the die bonding nozzle 401 to rotate around its own axis according to the photo of the chip carried on the transfer platform 301 taken by the transfer camera 703 to compensate for this angular deviation. If there is a displacement deviation of the substrate to be pasted, the die bonding driving unit 402 drives the die bonding nozzle 401 to move in the horizontal plane according to the photo of the substrate at the die bonding station 100 taken by the die bonding camera 701 to compensate for this displacement deviation. If there is an angular deviation of the substrate to be pasted, the die bonding driving unit 402 drives the die bonding nozzle 401 to rotate around its own axis according to the photo of the substrate at the die bonding station 100 taken by the die bonding camera 701 to compensate for this angular deviation.
[0102] S9. The die bonding driving unit 402 drives the die bonding nozzle 401 to perform the actions of moving downward, attaching the chip, and moving upward in sequence at the die bonding station 100, so as to attach the picked-up chip to the substrate at the die bonding station 100.
[0103] So far, the process of picking up and die bonding a chip is completed.
[0104] The second die bonding mode of this die bonder is as follows: The transfer platform 301 is placed outside the transfer station 200. The crystal supply driving unit 602 drives the crystal supply platform 601 to move past the transfer station 200 to supply chips. The die bonding driving unit 402 drives the die bonding nozzle 401 to pick up the chips in the wafer carried on the crystal supply platform 601 at the transfer station 200 and attach them to the substrate at the die bonding station 100.
[0105] In the second die bonding mode, before the die bonding nozzle 401 picks up the chip, the die bonding driving unit 402 drives the die bonding nozzle 401 to move in the horizontal plane according to the photo of the wafer carried on the crystal supply platform 601 taken by the transfer camera 703 to compensate for the displacement deviation of the chip to be picked up, and also drives the die bonding nozzle 401 to rotate around its own axis according to the photo of the chip already picked up by the die bonding nozzle 401 taken by the bottom camera to compensate for the angular deviation of the picked-up chip. In addition, before attaching the chip, the die bonding driving unit 402 drives the die bonding nozzle 401 to move in the horizontal plane according to the photo of the substrate at the die bonding station 100 taken by the die bonding camera 701 to compensate for the displacement deviation of the substrate to be pasted, and drives the die bonding nozzle 401 to rotate around its own axis to compensate for the angular deviation of the substrate to be pasted.
[0106] The applicable objects of the first die bonding mode and the second die bonding mode are different. The former is applicable to wafers with high requirements for chip mounter accuracy and slow peeling speed, such as wafers larger than 5 mm. The latter is applicable to wafers with high requirements for chip mounter speed and fast peeling speed, such as wafers within 5 mm. The two die bonding modes expand the application range of the die bonder, enabling it to be applicable to wafers with more different requirements. Technicians can change the position of the transfer platform 301 and the die supply position of the die supply mechanism 6 according to the specific requirements of the chip mounter operation, and select whether the die bonder performs chip mounter operations in the first die bonding mode or the second die bonding mode.
[0107] Exemplarily, in the second die bonding mode, the die picking and die bonding processes of the die bonder are roughly as follows (taking the bonding of one wafer as an example):
[0108] S1. The die supply platform 601 carries the wafer and supplies the wafer at the transfer station 200;
[0109] S2. The die bonding drive unit 402 drives the die bonding nozzle 401 to move to the transfer station 200 and face the wafer to be picked up. During this process, if there is a displacement deviation of the wafer to be picked up, the die bonding drive unit 402 drives the die bonding nozzle 401 to move horizontally according to the photo of the wafer carried by the die supply platform 601 taken by the transfer camera 703 to compensate for this displacement deviation;
[0110] S3. The die picking drive unit 502 drives the die picking nozzle 501 to perform the actions of moving downward, adsorbing the wafer, and moving upward in sequence at the transfer station 200, realizing the picking up of the wafer from the die supply platform 601;
[0111] S4. The die bonding drive unit 402 drives the die bonding nozzle 401 to move to the die bonding station 100 and face the die bonding point of the substrate. During this process, if there is an angular deviation of the picked-up wafer before being picked up, the die bonding drive unit 402 drives the die bonding nozzle 401 to rotate around its own axis according to the photo of the wafer picked up by the die bonding nozzle 401 taken by the bottom camera to compensate for this angular deviation. If there is a displacement deviation of the die bonding substrate, the die bonding drive unit 402 drives the die bonding nozzle 401 to move horizontally according to the photo of the substrate at the die bonding station 100 taken by the die bonding camera 701 to compensate for this displacement deviation. If there is an angular deviation of the die bonding substrate, the die bonding drive unit 402 drives the die bonding nozzle 401 to rotate around its own axis according to the photo of the substrate at the die bonding station 100 taken by the die bonding camera 701 to compensate for this angular deviation;
[0112] S5. The die bonding drive unit 402 drives the die bonding nozzle 401 to perform the actions of moving downward, bonding the wafer, and moving upward in sequence at the die bonding station 100, realizing the bonding of the picked-up wafer on the substrate at the die bonding station 100;
[0113] So far, the process of crystal picking and die bonding for one wafer is completed.
[0114] Refer to Figure 9 , since the focusing object of the transfer camera 703 in the first die bonding mode is the wafer carried by the transfer platform 301, while the focusing object in the second die bonding mode is the wafer carried by the crystal supply platform 601. Also, since the transfer platform 301 is higher than the crystal supply platform 601, in order to ensure that the transfer camera 703 can achieve clear shooting and accurately feedback positioning information in both die bonding modes, the transfer camera 703 is set to be able to adjust its position by moving up and down, and can at least stay at two positions, namely the high position and the low position, both of which are higher than the transfer station 200. In the first die bonding mode, the transfer camera 703 is placed at the high position to take pictures of the wafer carried by the transfer platform 301 from top to bottom. In the second die bonding mode, the transfer camera 703 is placed at the low position to take pictures of the wafer carried by the crystal supply platform 601 from top to bottom.
[0115] In this embodiment, the vision detection mechanism 7 further includes a second adjustment track 704 extending along the vertical direction Z, which is arranged beside the transfer station 200, and the transfer camera 703 is installed on the second adjustment track 704 and can slide along it. By moving the transfer camera 703, the position of the transfer camera 703 can be adjusted so that it is at the high position in the first die bonding mode and at the low position in the second die bonding mode. This design enables the transfer camera 703 to smoothly switch positions between the high position and the low position without disassembly, which not only simplifies the operation process but also provides a hardware basis for automatic position switching. At the same time, due to the high precision and stability of the track structure, even though the position of the transfer camera 703 is adjustable, it can still accurately locate and remain stable at the predetermined position, thus ensuring the shooting effect.
[0116] In this embodiment, the height difference between the high position and the low position is approximately equal to the height difference between the transfer platform 301 and the crystal supply platform 601, so as to make the shooting focal lengths of the transfer camera 703 in the two die bonding modes the same as much as possible, thereby ensuring a constant shooting quality.
[0117] In this embodiment, the die bonding drive unit 402 is set to drive the die bonding nozzle 401 to reciprocate between the transfer station 200 and the die bonding station 100 along the first direction, and the crystal picking drive unit 502 is set to drive the crystal picking nozzle 501 to reciprocate between the crystal picking station 300 and the transfer station 200 along the first direction. That is to say, the die bonding nozzle 401 and the crystal picking nozzle 501 respectively make reciprocating linear motions between the two stations, so that the travel is shorter, the operating efficiency is higher, the stability is better, and thus it is beneficial to the improvement of accuracy.
[0118] Refer to Figure 4 , Figure 5 , Figure 9 andFigure 10 Moreover, the die bonder provided in this embodiment further includes a first main light source 8, which adopts an integrated design and is disposed between the regions where the die bonding station 100, the transfer station 200, and the die picking station 300 are located and the regions where the die bonding camera 701, the transfer camera 703, and the die picking camera 702 are located, so as to provide illumination for the above three stations simultaneously.
[0119] Specifically, the first main light source 8 includes a first main lamp holder 801, a first prism 802, and a first main lamp body disposed on the first main lamp holder 801. The first prism 802 is disposed on the optical axes of the die bonding camera 701, the transfer camera 703, and the die picking camera 702. At least part of the light rays of the first main lamp body are refracted downward by the first prism 802 and cover the die bonding station 100, the transfer station 200, and the die picking station 300. Based on this structure, the optical axis of the first main lamp body is nearly coaxial with the optical axes of the die bonding camera 701, the transfer camera 703, and the die picking camera 702, thereby realizing effective illumination in the true sense, improving the light utilization rate, avoiding the ineffective stacking of light sources, and reducing the energy consumption.
[0120] Furthermore, the first main lamp holder 801 is provided with a first accommodating cavity and a first mounting hole that penetrates up and down. The first mounting hole is disposed beside the first accommodating cavity and the two are connected. The optical axes of the die bonding camera 701, the transfer camera 703, and the die picking camera 702 all pass through the first mounting hole. The first prism 802 is disposed in the first mounting hole. The first main lamp body is disposed in the first accommodating cavity. At least part of the light rays of the first main lamp body are refracted by the first prism 802 and then shoot downward from the lower end of the first mounting hole and cover the die bonding station 100, the transfer station 200, and the die picking station 300.
[0121] Furthermore, the first mounting hole includes a first hole position 8011, a second hole position 8012, and a third hole position 8013 arranged in sequence along the first horizontal direction X. The first hole position 8011 is disposed below the die bonding camera 701 and the optical axis of the die bonding camera 701 passes through it. The second hole position 8012 is disposed below the transfer camera 703 and the optical axis of the transfer camera 703 passes through it. The third hole position 8013 is disposed below the crystal picking camera 702 and the optical axis of the crystal picking camera 702 passes through it. The first prism 802 includes a first lens body 8021, a second lens body 8022, and a third lens body 8023. The first lens body 8021 is disposed in the first hole position 8011, the second lens body 8022 is disposed in the second hole position 8012, and the third lens body 8023 is disposed in the third hole position 8013. At least part of the light of the first main lamp body is refracted by the first lens body 8021 and then emitted downward from the lower end of the first hole position 8011, covering the die bonding station 100. At least part of the light of the first main lamp body is refracted by the second lens body 8022 and then emitted downward from the lower end of the second hole position 8012, covering the transfer station 200. At least part of the light of the first main lamp body is refracted by the third lens body 8023 and then emitted downward from the lower end of the third hole position 8013, covering the crystal picking station 300.
[0122] In this embodiment, the first main light source 8 further includes a second main lamp body 803, which is disposed at the bottom of the first main lamp holder 801, and its light covers the die bonding station 100, the transfer station 200, and the crystal picking station 300. The second main lamp body 803 and the first main lamp body jointly provide illumination for the die bonding station 100, the transfer station 200, and the crystal picking station 300 to ensure sufficient light.
[0123] See Figure 6 and Figure 7 In this embodiment, the die bonder further includes a first auxiliary light source and a second auxiliary light source 9, which respectively reinforce the illumination of the die bonding station 100 and the crystal picking station 300 from the side. The first auxiliary light source includes a first auxiliary lamp holder and a first auxiliary lamp body. The first auxiliary lamp holder supports the first auxiliary lamp body at a position close to the die bonding station 100 and higher than the carrier rail 201, and the first auxiliary lamp body irradiates the die bonding station 100 obliquely downward. The second auxiliary light source 9 includes a second auxiliary lamp holder 901 and a second auxiliary lamp body 902. The second auxiliary lamp holder 901 mounts the second auxiliary lamp body 902 at a position close to the crystal picking station 300 and higher than the crystal supply platform 601, and the second auxiliary lamp body 902 irradiates the crystal picking station 300 obliquely downward.
[0124] See Figure 3 、 Figure 4 、 Figure 5 and Figure 8, the die bonder provided in this embodiment further includes a glue dispensing station 400, which is arranged on the conveying path of the conveying track 201 and is located upstream of the die bonding station 100. That is, the substrate first passes through the glue dispensing station 400 and then passes through the die bonding station 100.
[0125] Corresponding to the glue dispensing station 400, the die bonder further includes a glue dispensing mechanism 10, which includes a glue dispensing driving unit 1001 and a glue dispensing head. The glue dispensing driving unit 1001 is configured to drive the glue dispensing head to move in a horizontal plane higher than the conveying track 201 and pass through the glue dispensing station 400. The glue dispensing head is used to dispense glue on the substrate at the glue dispensing station 400.
[0126] Furthermore, the vision inspection mechanism 7 further includes a glue dispensing camera 705 arranged above the glue dispensing station 400, which is used to take pictures of the glue dispensing station 400 from top to bottom to locate the patch points on the substrate to be dispensed with glue.
[0127] Based on the above structure, when the substrate reaches the glue dispensing station 400, the glue dispensing driving unit 1001 drives the glue dispensing head to move to the glue dispensing station 400 and is directly opposite to the patch points on the substrate to be dispensed with glue. During this process, if there is a displacement deviation of the substrate to be dispensed with glue, the glue dispensing driving unit 1001 drives the glue dispensing head to move in the horizontal plane according to the photo of the substrate at the glue dispensing station 400 taken by the glue dispensing camera 705 to compensate for the displacement deviation.
[0128] See Figure 8 , the die bonder provided in this embodiment further includes a second main light source 11 that is almost the same as the first main light source 8 in structure. It is arranged between the glue dispensing station 400 and the glue dispensing camera 705 to provide illumination for the glue dispensing station 400.
[0129] Specifically, the second main light source 11 includes a second main lamp holder 1101, a second prism 1102 and a third main lamp body arranged on the second main lamp holder 1101. The second prism 1102 is arranged on the optical axis of the glue dispensing camera 705. At least part of the light of the third main lamp body is refracted downward by the second prism 1102 and covers the glue dispensing station 400. That is, the optical axis of the third main lamp body is almost coaxial with the optical axis of the glue dispensing camera 705, so effective illumination is achieved, the light utilization rate is improved, and the energy consumption is reduced.
[0130] Furthermore, the second main lamp holder 1101 is provided with a second accommodation cavity and a second mounting hole 1100 that penetrates up and down. The second mounting hole 1100 is arranged beside the second accommodation cavity and the two are connected. The optical axis of the glue dispensing camera 705 passes through the second mounting hole 1100. The second prism 1102 is arranged in the second mounting hole 1100. The third main lamp body is arranged in the second accommodation cavity. At least part of the light of the third main lamp body is refracted by the second prism 1102 and then shoots downward from the lower end of the second mounting hole 1100 and covers the glue dispensing station 400.
[0131] In this embodiment, the second main light source 11 further includes a fourth main lamp body 1103, which is disposed at the bottom of the second main lamp holder 1101, and its light covers the glue painting station 400. The fourth main lamp body 1103 and the third main lamp body jointly provide illumination for the glue painting station 400 to ensure sufficient light.
[0132] See Figure 4 and Figure 5 As shown in and, the die bonder provided in this embodiment further includes a third auxiliary light source 12 to reinforce the illumination of the glue painting station 400 from the side. The third auxiliary light source 12 includes a third auxiliary lamp holder 1201 and a third auxiliary lamp body 1202. The third auxiliary lamp holder 1201 supports the third auxiliary lamp body 1202 at a position close to the glue painting station 400 and higher than the carrier rail 201, and the third auxiliary lamp body 1202 irradiates the glue painting station 400 obliquely downward.
[0133] Different from the cameras in the prior art that need to move between multiple stations for shooting, the die bonding camera 701, the crystal picking camera 702, the transfer camera 703, the bottom camera, and the glue painting camera 705 in this embodiment all remain stationary during operation and do not move following components such as the crystal picking nozzle 501, the die bonding nozzle 401, and the glue painting head. They respectively shoot the corresponding stations or targets from fixed positions, so they have higher stability. This design significantly improves the accuracy of the feedback positioning information, thus effectively ensuring the operation accuracy of the die bonder.
[0134] In this embodiment, the transfer platform 301 is provided with negative pressure suction holes for adsorbing the carried wafers to minimize the possibility of displacement deviation and angular deviation of the wafers on the transfer platform 301.
[0135] Given that the substrate has multiple chip mounting points and there are various size specifications, in order to ensure that all chip mounting points on substrates of each specification can be clearly photographed, in this embodiment, multiple die bonding cameras 701 are provided, which are arranged at equal intervals along the first horizontal direction X above the die bonding station 100, and the situation of missed shooting and defocusing is avoided by expanding the shooting range. Or, in other embodiments, only one die bonding camera 701 is provided, which is set to be movable along the first horizontal direction X to adjust its position. When it is necessary to photograph certain chip mounting points, the die bonding camera 701 is moved above them for shooting, and the problems of missed shooting and defocusing are solved by targeted shooting.
[0136] In this embodiment, the carrier track 201 is designed to be higher than the crystal supply platform 601, and an avoidance space is provided below the carrier track 201 for the crystal supply platform 601 to enter or pass through when moving. In this way, even if the die bonding station 100, the transfer station 200, and the crystal picking station 300 are adjacent to each other in sequence, the carrier track 201 and the crystal supply platform 601 can be non-interfering with each other, thereby significantly improving the space utilization rate of the die bonder, making its structure more compact and the volume more reasonable.
[0137] In this embodiment, the first horizontal direction X is perpendicular to the second horizontal direction Y.
[0138] The above description is only used to describe the present invention exemplarily and is not used to limit the present invention. It should be noted that for those of ordinary skill in the art, several improvements, modifications, and variations can be made to the present invention, but these improvements, modifications, and variations should all be regarded as falling within the protection scope of the present invention without departing from the spirit of the present invention.
Claims
1. A die bonder, characterized in that, There are a die bonding station, a transfer station, and a crystal picking station arranged in sequence along the first horizontal direction, and it includes: A carrier mechanism, which includes a carrier track for transporting a substrate, and the carrier track extends along the second horizontal direction and passes through the die bonding station; A transfer mechanism, which includes a transfer platform for carrying wafers in the transfer station; A die bonding mechanism, which includes a die bonding nozzle and a die bonding driving unit. The die bonding nozzle is used for adsorbing wafers, and the die bonding driving unit is configured to drive the die bonding nozzle to rotate around its own axis, move up and down in the vertical direction, and move in a horizontal plane higher than the carrier track and the transfer platform and travel back and forth between the transfer station and the die bonding station; A crystal picking mechanism, which includes a crystal picking nozzle and a crystal picking driving unit. The crystal picking nozzle is used for adsorbing wafers, and the crystal picking driving unit is configured to drive the crystal picking nozzle to rotate around its own axis, move up and down in the vertical direction, and move in a horizontal plane higher than the carrier track and the transfer platform and travel back and forth between the crystal picking station and the transfer station; A crystal supply mechanism, which includes a crystal supply platform and a crystal supply driving unit. The crystal supply platform is used for carrying a wafer and is lower than the transfer platform, and the crystal supply driving unit is configured to drive the crystal supply platform to move in a horizontal plane and selectively pass through the crystal picking station; A vision inspection mechanism, which includes a die bonding camera and a crystal picking camera. The die bonding camera is arranged above the die bonding station and is used for photographing the die bonding station from top to bottom. The crystal picking camera is arranged above the crystal picking station and is used for photographing the crystal picking station from top to bottom; The die bonding modes of the die bonder include: The first die bonding mode, in which the transfer platform is in the transfer station, the crystal supply driving unit drives the crystal supply platform to move through the crystal picking station to supply wafers, the crystal picking driving unit drives the crystal picking nozzle to pick up a wafer from the wafer carried by the crystal supply platform at the crystal picking station and place it on the transfer platform in the transfer station, and the die bonding driving unit drives the die bonding nozzle to pick up the wafer carried by the transfer platform at the transfer station and bond it to the substrate at the die bonding station; In the first die bonding mode, the crystal picking driving unit compensates for the displacement deviation of the wafer to be picked up by driving the crystal picking nozzle to move in a horizontal plane before the crystal picking nozzle picks up the wafer according to the photo of the wafer carried by the crystal supply platform taken by the crystal picking camera, and compensates for the angular deviation of the picked-up wafer by driving the crystal picking nozzle to rotate around its own axis after the crystal picking nozzle picks up the wafer; the die bonding driving unit compensates for the displacement deviation of the substrate to be pasted by driving the die bonding nozzle to move in a horizontal plane before bonding the wafer according to the photo of the substrate at the die bonding station taken by the die bonding camera, and compensates for the angular deviation of the substrate to be pasted by driving the die bonding nozzle to rotate around its own axis before bonding the wafer.
2. The die bonder according to claim 1, characterized in that, The vision inspection mechanism further includes a transfer camera arranged above the transfer station, which is used for photographing the transfer station from top to bottom; In the first die bonding mode, the die bonding driving unit further compensates for the displacement deviation of the wafer to be picked up by driving the die bonding nozzle to move horizontally before the die bonding nozzle picks up the wafer according to the photo of the wafer carried on the transfer platform taken by the transfer camera, and compensates for the angular deviation of the picked-up wafer by driving the die bonding nozzle to rotate around its own axis after the die bonding nozzle picks up the wafer.
3. The die bonder according to claim 2, wherein, The transfer platform is arranged to be adjustable in position by horizontal movement and can stay at least at two positions, namely, inside and outside the transfer station; in the first die bonding mode, the transfer platform is placed inside the transfer station. The crystal supply driving unit is further arranged to drive the crystal supply platform to selectively pass through the transfer station. The die bonding modes of the die bonder further include: The second die bonding mode, in which the transfer platform is placed outside the transfer station, the crystal supply driving unit drives the crystal supply platform to move through the transfer station to supply wafers, and the die bonding driving unit drives the die bonding nozzle to pick up the wafers in the wafer carried on the crystal supply platform at the transfer station and bond them to the substrate at the die bonding station. In the second die bonding mode, the die bonding driving unit compensates for the displacement deviation of the wafer to be picked up by driving the die bonding nozzle to move horizontally before the die bonding nozzle picks up the wafer according to the photo of the wafer carried on the crystal supply platform taken by the transfer camera, and also compensates for the displacement deviation of the substrate to be patched by driving the die bonding nozzle to move horizontally before patching the wafer according to the photo of the substrate at the die bonding station taken by the die bonding camera, and compensates for the angular deviation of the substrate to be patched by driving the die bonding nozzle to rotate around its own axis before patching the wafer.
4. The die bonder according to claim 3, characterized in that, The transfer mechanism further includes a first adjustment track extending in any horizontal direction and passing through the transfer station, and the transfer platform is installed on the first adjustment track and can slide along it.
5. The die bonder according to claim 3, characterized in that The vision inspection mechanism further includes a bottom camera, which is arranged below the moving path of the die bonding nozzle between the transfer station and the die bonding station and is used to take pictures of the die bonding nozzle passing above it from bottom to top. In the second die bonding mode, the die bonding driving unit further compensates for the angular deviation of the picked-up wafer by driving the die bonding nozzle to rotate around its own axis according to the photo of the wafer picked up by the die bonding nozzle taken by the bottom camera.
6. The die bonder according to claim 3, characterized in that The transfer camera is arranged to be adjustable in position by vertical movement and can stay at least at two positions, namely, a high position and a low position, both of which are higher than the transfer station. In the first die bonding mode, the transfer camera is placed at the high position and is used to take pictures of the wafer carried on the transfer platform from top to bottom. In the second die bonding mode, the transfer camera is placed at the low position and is used to take pictures of the wafer carried on the crystal supply platform from top to bottom.
7. The die bonder according to claim 6, wherein, The visual inspection mechanism further includes a second adjustment track extending in the vertical direction, which is arranged beside the transfer station, and the transfer camera is installed on the second adjustment track and can slide along it.
8. The die bonder according to claim 2, wherein, It includes a first main light source, which is arranged between the areas where the die bonding station, the transfer station, and the crystal picking station are located and the areas where the die bonding camera, the transfer camera, and the crystal picking camera are located; The first main light source includes a first main lamp holder, a first prism, and a first main lamp body arranged on the first main lamp holder. The first prism is arranged on the optical axes of the die bonding camera, the transfer camera, and the crystal picking camera. At least part of the light of the first main lamp body is refracted downward by the first prism and covers the die bonding station, the transfer station, and the crystal picking station.
9. The die bonder according to claim 8, wherein, The first main lamp holder is provided with a first accommodation cavity and a first mounting hole that penetrates up and down. The first mounting hole is arranged beside the first accommodation cavity and the two are connected. The optical axes of the die bonding camera, the transfer camera, and the crystal picking camera all pass through the first mounting hole; The first prism is arranged in the first mounting hole; The first main lamp body is arranged in the first accommodation cavity. At least part of the light of the first main lamp body is refracted by the first prism and then shoots downward from the lower end of the first mounting hole, and covers the die bonding station, the transfer station, and the crystal picking station.
10. The die bonder according to claim 9, wherein, The first mounting hole includes a first hole position, a second hole position, and a third hole position arranged in sequence along the first horizontal direction. The first hole position is arranged below the die bonding camera and the optical axis of the die bonding camera passes through it. The second hole position is arranged below the transfer camera and the optical axis of the transfer camera passes through it. The third hole position is arranged below the crystal picking camera and the optical axis of the crystal picking camera passes through it; The first prism includes a first lens body, a second lens body, and a third lens body. The first lens body is arranged in the first hole position, the second lens body is arranged in the second hole position, and the third lens body is arranged in the third hole position; At least part of the light of the first main lamp body is refracted by the first lens body and then shoots downward from the lower end of the first hole position, and covers the die bonding station. At least part of the light of the first main lamp body is refracted by the second lens body and then shoots downward from the lower end of the second hole position, and covers the transfer station. At least part of the light of the first main lamp body is refracted by the third lens body and then shoots downward from the lower end of the third hole position, and covers the crystal picking station.
11. The die bonder according to claim 9, characterized in that, The first main light source further includes a second main lamp body, which is arranged at the bottom of the first main lamp holder, and its light covers the die bonding station, the transfer station, and the crystal picking station.
12. The die bonder according to claim 8, wherein, It further includes a first auxiliary light source, which includes a first auxiliary lamp holder and a first auxiliary lamp body. The first auxiliary lamp holder supports the first auxiliary lamp body at a position close to the die bonding station and higher than the conveying track, and the first auxiliary lamp body irradiates the die bonding station obliquely downward.
13. The die bonder according to claim 8, characterized in that, It further includes a second auxiliary light source, which includes a second auxiliary lamp holder and a second auxiliary lamp body. The second auxiliary lamp holder mounts the second auxiliary lamp body at a position close to the crystal picking station and higher than the crystal supply platform, and the second auxiliary lamp body irradiates the crystal picking station obliquely downward.
14. The die bonder according to claim 1, wherein, There is also a glue painting station, which is arranged on the conveying path of the conveying track and is located upstream of the die bonding station; The die bonder further includes a glue painting mechanism, which includes a glue painting driving unit and a glue painting head. The glue painting driving unit is configured to drive the glue painting head to move in a horizontal plane higher than the conveying track and pass through the glue painting station, and the glue painting head is used to paint glue on the substrate at the glue painting station; The vision inspection mechanism further includes a glue painting camera arranged above the glue painting station, which is used to photograph the glue painting station from top to bottom to locate the patch points on the substrate where glue needs to be painted.
15. The die bonder according to claim 14, wherein It further includes a second main light source, which is arranged between the glue painting station and the glue painting camera; The second main light source includes a second main lamp holder, a second prism and a third main lamp body arranged on the second main lamp holder. The second prism is arranged on the optical axis of the glue painting camera, and at least part of the light of the third main lamp body is refracted downward by the second prism and covers the glue painting station.
16. The die bonder according to claim 15, wherein The second main lamp holder is provided with a second accommodation cavity and a second mounting hole that penetrates up and down. The second mounting hole is arranged beside the second accommodation cavity and the two are connected. The optical axis of the glue painting camera passes through the second mounting hole; The second prism is arranged in the second mounting hole; The third main lamp body is arranged in the second accommodation cavity. At least part of the light of the third main lamp body is refracted by the second prism and then shoots downward from the lower end of the second mounting hole and covers the glue painting station.
17. The die bonder according to claim 16, wherein, The second main light source further includes a fourth main lamp body, which is arranged at the bottom of the second main lamp holder and its light covers the glue painting station.
18. The die bonder according to claim 15, characterized in that, It further includes a third auxiliary light source, which includes a third auxiliary lamp holder and a third auxiliary lamp body. The third auxiliary lamp holder supports the third auxiliary lamp body at a position close to the glue painting station and higher than the conveying track, and the third auxiliary lamp body irradiates the glue painting station obliquely downward.
19. The die bonder according to claim 1, wherein, The transfer platform is provided with negative pressure suction holes for adsorbing the wafers carried.
20. The die bonder according to claim 1, characterized in that, A plurality of die bonding cameras are provided, which are arranged at equal intervals along the first horizontal direction above the die bonding station.
21. The die bonder according to claim 1, characterized in that, The die bonding cameras are configured to be adjustable in their positions by moving along the first horizontal direction.
22. The die bonder according to claim 1, characterized in that, The conveying track is higher than the crystal supply platform, and there is an avoidance space below the conveying track for the crystal supply platform to enter or pass through when it moves.
Citation Information
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