Anti-radiation power output stage circuit based on complementary bipolar process

Abstract

The invention provides an anti-radiation power output stage circuit based on a complementary bipolar process. The anti-radiation power output stage circuit comprises a Class AB output module, a sampling module, a feedback module and a bias module, wherein the Class AB output module, the sampling module, the feedback module and the bias module are designed in a bilateral symmetry mode. The sampling module samples the output end of the Class AB output module and transmits a sampling result to the feedback module, and the feedback module drives the bias module according to the sampling result so as to adjust bias current provided for the Class AB output module. According to the anti-radiation power output stage circuit, the driving capacity of the circuit under the irradiation condition can be improved, and meanwhile the problem that an existing anti-radiation power output stage circuit based on the complementary bipolar technology is insufficient in flexibility when the driving capacity of the circuit is improved, and resource waste is caused can be solved.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor integrated circuits, and in particular to a radiation-resistant power output stage circuit based on a complementary bipolar process. Background Art

[0002] With the continuous evolution of integrated circuit technology, various application scenarios now place increasingly stringent requirements on circuit driving capabilities. When driving a large load, the circuit needs to output a strong current to overcome the load impedance and ensure the normal operation of the load. Otherwise, it is very easy for the output voltage to drop significantly and the load to fail to work properly. In harsh environments facing radiation damage, the performance of devices such as transistors will deteriorate due to the effects of electron-hole pairs and trapped charges generated by radiation. There is also an urgent need for a larger drive current to maintain the stable operation of the circuit and ensure that the system function is not affected.

[0003] At present, conventional power output stage circuits generally improve the driving capability of the circuit by increasing the bias current. However, if the device is damaged by radiation, resulting in a decrease in the current gain of the bipolar device, then the solution of increasing the bias current is still used to improve the driving capability of the circuit. This will be limited by the lower current gain, and the driving capability of the circuit will be difficult to improve. At the same time, higher power consumption will be required. Summary of the invention

[0004] In view of the deficiencies in the prior art, the present invention provides a radiation-resistant power output stage circuit based on a complementary bipolar process, which solves the problem in the prior art that devices are affected by radiation damage, it is difficult to improve the driving capability of the circuit by increasing the bias current, and the power consumption increases.

[0005] According to an embodiment of the present invention, a radiation-resistant power output stage circuit based on a complementary bipolar process includes: a Class AB output module, a sampling module, a feedback module and a bias module with a bilaterally symmetrical design;

[0006] The sampling module samples the output end of the Class AB output module and transmits the sampling result to the feedback module. The feedback module drives the bias module according to the sampling result to adjust the bias current provided to the Class AB output module.

[0007] Optionally, the Class AB output module includes a first amplifying unit and a second amplifying unit, and the first amplifying unit and the second amplifying unit are complementary push-pull structures.

[0008] Optionally, the sampling module includes a first sampling unit and a second sampling unit;

[0009] The first sampling unit samples between the output terminals of the first amplification unit and the Class AB output module to obtain a first sampling current, and the second sampling unit samples between the output terminals of the second amplification unit and the Class AB output module to obtain a second sampling current. The first sampling unit and the second sampling unit include complementary bipolar transistors.

[0010] Optionally, the feedback module includes a first feedback unit and a second feedback unit;

[0011] The first feedback unit is connected to the bias module and the first sampling unit, and converts the first sampling current into a first sampling voltage; the second feedback unit is connected to the bias module and the second sampling unit, and converts the second sampling current into a second sampling voltage.

[0012] Optionally, the bias module includes a first current mirror unit and a second current mirror unit;

[0013] The input end of the first current mirror unit is connected to the first feedback unit, and the output end of the first current mirror unit is connected to the input end of the first amplification unit; the input end of the second current mirror unit is connected to the second feedback unit, and the output end of the second current mirror unit is connected to the input end of the second amplification unit;

[0014] The first sampling voltage changes the input voltage of the first current mirror unit, adjusts the output voltage of the first current mirror unit, so as to adjust the bias current provided to the first amplification unit; the second sampling voltage changes the input voltage of the second current mirror unit, adjusts the output voltage of the second current mirror unit, so as to adjust the bias current provided to the second amplification unit.

[0015] Optionally, an overcurrent protection module is further included;

[0016] The overcurrent protection module is arranged at the output end of the Class AB output module.

[0017] Optionally, the Class AB output module includes a first transistor, a second transistor, a third transistor, and a fourth transistor;

[0018] The first transistor and the third transistor are the first amplification unit, and the second transistor and the fourth transistor are the second amplification unit;

[0019] The bases of the first transistor and the second transistor are both connected to the input terminal of the Class AB output module. The emitter of the first transistor is connected to the base of the third transistor, and the emitter of the first transistor is also connected to the bias module. The collector of the third transistor is grounded. The emitter of the second transistor is connected to the base of the fourth transistor, and the emitter of the second transistor is also connected to the bias module. The collector of the second transistor is grounded. The output terminal of the Class AB output module is included between the emitters of the third transistor and the fourth transistor.

[0020] The first transistor and the third transistor are NPN transistors, and the second transistor and the fourth transistor are PNP transistors.

[0021] Optionally, the sampling module includes a fifth transistor, a sixth transistor, a seventh transistor, and an eighth transistor.

[0022] The fifth transistor and the sixth transistor form a first sampling unit, and the seventh transistor and the eighth transistor form a second sampling unit.

[0023] The emitter of the sixth transistor is connected to the emitter of the third transistor and the output terminal of the Class AB output module. The collector of the sixth transistor is connected to the emitter of the fifth transistor. The collector of the fifth transistor is grounded. The base of the fifth transistor is connected to the sampling module, and the base of the sixth transistor is connected to the emitter of the first transistor. The emitter of the seventh transistor is connected to the emitter of the fourth transistor and the output terminal of the Class AB output module. The collector of the seventh transistor is connected to the emitter of the eighth transistor. The collector of the eighth transistor is connected to a voltage source. The base of the seventh transistor is connected to the emitter of the second transistor, and the base of the eighth transistor is connected to the sampling module.

[0024] The fifth transistor and the sixth transistor are PNP transistors, and the seventh transistor and the eighth transistor are NPN transistors.

[0025] Optionally, the feedback module includes a first resistor and a second resistor. The first resistor is a first feedback unit, and the second resistor is a second feedback unit.

[0026] The bias module includes a ninth transistor, a tenth transistor, an eleventh transistor, a twelfth transistor, a first current source, and a second current source.

[0027] The ninth transistor and the tenth transistor form a first current mirror unit, and the eleventh transistor and the twelfth transistor form a second current mirror unit;

[0028] The collector of the tenth transistor is the input terminal of the first current mirror unit, which is connected to the first current source. The collector and the base of the tenth transistor are short - circuited. The emitter of the tenth transistor is connected to one end of the first resistor. One end of the first resistor is also connected to the base of the fifth transistor. The other end of the first resistor is grounded. The base of the tenth transistor is connected to the base of the ninth transistor. The collector of the ninth transistor is the output terminal of the first current mirror unit. The collector of the ninth transistor is also connected to the emitter of the first transistor and the base of the third transistor. The emitter of the ninth transistor is grounded;

[0029] The emitter of the twelfth transistor is the input terminal of the second current mirror unit. The collector of the twelfth transistor is connected to the second current source. The base and the collector of the twelfth transistor are short - circuited. The emitter of the twelfth transistor is connected to one end of the second resistor. One end of the second resistor is also connected to the base of the eighth transistor. The other end of the second resistor is connected to a voltage source. The base of the twelfth transistor is connected to the base of the eleventh transistor. The collector of the eleventh transistor is the output terminal of the second current mirror unit. The collector of the eleventh transistor is also connected to the emitter of the second transistor and the base of the fourth transistor. The emitter of the eleventh transistor is connected to a voltage source;

[0030] The ninth transistor and the tenth transistor are NPN transistors, and the eleventh transistor and the twelfth transistor are PNP transistors.

[0031] Optionally, the over - current protection circuit includes a third resistor, a fourth resistor, a thirteenth transistor, and a fourteenth transistor;

[0032] One end of the third resistor is connected to the output terminal of the Class AB output module and the emitter of the thirteenth transistor. The other end of the third resistor is connected to the emitter of the sixth transistor, the emitter of the third transistor, and the base of the thirteenth transistor. The collector of the thirteenth transistor is connected to the base of the sixth transistor, the collector of the ninth transistor, and the emitter of the first transistor;

[0033] One end of the fourth resistor is connected to the output end of the Class AB output module and the emitter of the fourteenth transistor. The other end of the fourth resistor is connected to the emitter of the seventh transistor, the emitter of the fourth transistor, and the base of the fourteenth transistor. The collector of the fourteenth transistor is connected to the base of the fourth transistor, the emitter of the second transistor, and the collector of the eleventh transistor;

[0034] The thirteenth transistor is a PNP transistor, and the fourteenth transistor is an NPN transistor.

[0035] Compared with the prior art, the present invention has the following beneficial effects: It provides a radiation-resistant power output stage circuit based on a complementary bipolar process, including a Class AB output module, a sampling module, a feedback module, and a bias module. The sampling module samples the output end of the Class AB output module and transmits the sampling result to the feedback module. The feedback module drives the bias module according to the sampling result to adjust the bias current provided to the Class AB output module, thereby compensating the base current of the irradiated transistor and enhancing the driving ability of the circuit, solving the problem that the existing power output stage circuit cannot overcome the influence of device irradiation damage, and it is difficult to enhance the driving ability of the circuit by increasing the bias current and the power consumption increases. In addition, the Class AB output module, the sampling module, the feedback module, and the bias module all adopt a left-right symmetric design, and under the same power supply voltage, they can provide a larger output power than the asymmetric structure, further reducing the heat loss. Description of the Drawings

[0036] Figure 1 It is a schematic diagram of the composition structure of the radiation-resistant power output stage circuit based on the complementary bipolar process according to an embodiment of the present invention;

[0037] Figure 2 It is a schematic diagram of the composition structure of the radiation-resistant power output stage circuit based on the complementary bipolar process according to another embodiment of the present invention;

[0038] Figure 3 It is a schematic diagram of the composition structure of the radiation-resistant power output stage circuit based on the complementary bipolar process according to still another embodiment of the present invention;

[0039] Figure 4 It is a schematic diagram of the circuit structure of the radiation-resistant power output stage circuit based on the complementary bipolar process according to an embodiment of the present invention;

[0040] Figure 5 It is a schematic diagram of the circuit structure of the radiation-resistant power output stage circuit based on the complementary bipolar process according to another embodiment of the present invention.

[0041] In the above-mentioned drawings: 10 is a Class AB output module, 11 is a first amplification unit, 12 is a second amplification unit; 20 is a sampling module, 21 is a first sampling unit, and 22 is a second sampling unit; 30 is a feedback module, 31 is a first feedback unit, and 32 is a second feedback unit; 40 is a bias module, 41 is a first current mirror unit, and 42 is a second current mirror unit; 50 is an overcurrent protection module. Detailed implementation mode

[0042] The technical solutions in the present invention will be further described below with reference to the drawings and embodiments.

[0043] As Figure 1 shown, an anti-radiation power output stage circuit 100 based on a complementary bipolar process is proposed in an embodiment of the present invention, which includes a Class AB output module 10, a sampling module 20, a feedback module 30, and a bias module 40. Among them, the Class AB output module 10, the sampling module 20, the feedback module 30, and the bias module 40 all adopt a left-right symmetric design.

[0044] The detailed working process of the anti-radiation power output stage circuit 100 based on the complementary bipolar process in the embodiment of the present invention is as follows: The sampling module 20 samples the output terminal VOUT of the Class AB output module 10 and transmits the sampling result to the feedback module 30. The feedback module 30 drives the bias module 40 according to the sampling result to adjust the bias current provided to the Class AB output module 10, and finally realizes the output of the Class AB output module 10 changing with the load, flexibly improving the driving ability of the circuit, and avoiding the problem of resource waste.

[0045] Exemplarily, in specific applications, when the anti-radiation power output stage circuit 100 based on the complementary bipolar process is under the conditions of radiation damage or driving a large load, the decrease in the device current gain in the Class AB output module 10 or the increase in the driving current required by the load will both cause the sampling module 20 to rise. The role of the feedback module 30 is to drive the bias module 40 with a higher voltage, so as to compensate the bias current obtained in the Class AB output module 10, and finally improve the driving ability of the Class AB output module 10.

[0046] As Figure 2 shown, the composition structures of the Class AB output module 10, the sampling module 20, the feedback module 30, and the bias module 40 are described in the embodiment of the present invention.

[0047] Among them, the Class AB output module 10 includes a first amplification unit 11 and a second amplification unit 12, and the first amplification unit 11 and the second amplification unit 12 are in a complementary push-pull structure. Based on this, the first amplification unit 11 and the second amplification unit 12 of the Class AB output module 10 are designed to be left-right symmetric, and alternate through two complementary transistors, which can cancel even harmonic distortion, improve linearity, and at the same time enhance thermal stability.

[0048] Among them, the sampling module 20 includes a first sampling unit 21 and a second sampling unit 22; the first sampling unit 21 samples between the first amplification unit 11 and the output terminal VOUT of the Class AB output module 10 to obtain a first sampling current, and the second sampling unit 22 samples between the second amplification unit 12 and the output terminal of the Class AB output module to obtain a second sampling current, and the first sampling unit 21 and the second sampling unit 22 include complementary bipolar transistors. Based on this, the sampling module 20 continues to maintain a left-right symmetric layout design on the basis of the Class AB output module 10, while ensuring that the positive and negative signal paths are consistent, and suppressing common-mode noise.

[0049] Among them, the feedback module 30 includes a first feedback unit 31 and a second feedback unit 32; the first feedback unit 31 is connected to the bias module 40 and the first sampling unit 21, and converts the first sampling current into a first sampling voltage; the second feedback unit 32 is connected to the bias module 40 and the second sampling unit 22, and converts the second sampling current into a second sampling voltage. In the embodiment of the present invention, the sampling results of the two sampling units are processed by the two feedback units respectively and fed back to the following bias module 40, and finally the current bias of the two amplification units of the Class AB output module 10 is affected, so as to realize the change of the output of the Class AB output module 10 with the load.

[0050] Among them, the bias module 40 includes a first current mirror unit 41 and a second current mirror unit 42; the input end of the first current mirror unit 41 is connected to the first feedback unit 31, and the output end of the first current mirror unit 41 is connected to the input end of the first amplification unit 11; the input end of the second current mirror unit 42 is connected to the second feedback unit 32, and the output end of the second current mirror unit 42 is connected to the input end of the second amplification unit 12; in a specific application, the first sampling voltage changes the input voltage of the first current mirror unit 41, adjusts the output voltage of the first current mirror unit 41, so as to adjust the bias current provided to the first amplification unit 11; the second sampling voltage changes the input voltage of the second current mirror unit 42, adjusts the output voltage of the second current mirror unit 42, so as to adjust the bias current provided to the second amplification unit 12. It should be noted that the first current mirror unit 41 and the second current mirror unit 42 are also complementary push-pull structures. Therefore, in the embodiment of the present invention, NPN and PNP current mirrors are used to provide positive and negative power supply bias currents respectively. Similarly, two complementary transistors work alternately, which can cancel even-order harmonic distortion, improve linearity, and at the same time improve thermal stability.

[0051] In another embodiment of the present invention, the radiation-resistant power output stage circuit 100 based on a complementary bipolar process further includes an overcurrent protection module 50 to prevent the problem of excessive output current of the circuit under extreme process corner conditions, such as Figure 3 As shown, the overcurrent protection module 50 is arranged at the output end VOUT of the Class AB output module 10.

[0052] Such as Figure 4 As shown, the embodiment of the present invention describes the detailed circuit structures of the Class AB output module 10, the bias module 40, the sampling module 20, and the feedback module 30.

[0053] Among them, the Class AB output module 10 includes a first transistor Q1, a second transistor Q2, a third transistor Q3, and a fourth transistor Q4; the first transistor Q1 and the third transistor Q3 are the first amplification unit 11, and the second transistor Q2 and the fourth transistor Q4 are the second amplification unit 12; the bases of the first transistor Q1 and the second transistor Q2 are both connected to the input end VIN of the Class AB output module 10, the emitter of the first transistor Q1 is connected to the base of the third transistor Q3, the emitter of the first transistor Q1 is also connected to the bias module 40, and the collector of the third transistor Q3 is grounded; the emitter of the second transistor Q2 is connected to the base of the fourth transistor Q4, the emitter of the second transistor Q2 is also connected to the bias module 40, the collector of the second transistor Q2 is grounded; the output end VOUT of the Class AB output module 10 is included between the emitters of the third transistor Q3 and the fourth transistor Q4.

[0054] In a preferred implementation, the first transistor Q1 and the third transistor Q3 are NPN transistors, and the second transistor Q2 and the fourth transistor Q4 are PNP transistors.

[0055] Among them, the sampling module 20 includes a fifth transistor Q5, a sixth transistor Q6, a seventh transistor Q7, and an eighth transistor Q8; the fifth transistor Q5 and the sixth transistor Q6 form a first sampling unit 21, and the seventh transistor Q7 and the eighth transistor Q8 form a second sampling unit 22; the emitter of the sixth transistor Q6 is connected to the emitter of the third transistor Q3 and the output terminal VOUT of the Class AB output module 10, the collector of the sixth transistor Q6 is connected to the emitter of the fifth transistor Q5, the collector of the fifth transistor Q5 is grounded, the base of the fifth transistor Q5 is connected to the sampling module 20, and the base of the sixth transistor Q6 is connected to the emitter of the first transistor Q1; the emitter of the seventh transistor Q7 is connected to the emitter of the fourth transistor Q4 and the output terminal VOUT of the Class AB output module 10, the collector of the seventh transistor Q7 is connected to the emitter of the eighth transistor Q8, the collector of the eighth transistor Q8 is connected to the voltage source VCC, the base of the seventh transistor Q7 is connected to the emitter of the second transistor Q2, and the base of the eighth transistor Q8 is connected to the sampling module 20.

[0056] In a preferred implementation, the fifth transistor Q5 and the sixth transistor Q6 are PNP transistors, and the seventh transistor Q7 and the eighth transistor Q8 are NPN transistors.

[0057] Among them, the feedback module 30 includes a first resistor R1 and a second resistor R2; the first resistor R1 is the first feedback unit 31, and the second resistor R2 is the second feedback unit 32; the bias module 40 includes a ninth transistor Q9, a tenth transistor Q10, an eleventh transistor Q11, a twelfth transistor Q12, a first current source I1, and a second current source I2; the ninth transistor Q9 and the tenth transistor Q10 are the first current mirror unit 41, and the eleventh transistor Q11 and the twelfth transistor Q12 are the second current mirror unit 42; the collector of the tenth transistor Q10 is the input end of the first current mirror unit 41, which is connected to the first current source I1, and the collector and the base of the tenth transistor Q10 are short-circuited. The emitter of the tenth transistor Q10 is connected to one end of the first resistor R1. One end of the first resistor R1 is also connected to the base of the fifth transistor Q5. The other end of the first resistor R1 is grounded. The base of the tenth transistor Q10 is connected to the base of the ninth transistor Q9. The collector of the ninth transistor Q9 is the output end of the first current mirror unit 41. The collector of the ninth transistor Q9 is also connected to the emitter of the first transistor Q1 and the base of the third transistor Q3. The emitter of the ninth transistor Q9 is grounded; the emitter of the twelfth transistor Q12 is the input end of the second current mirror unit 42. The collector of the twelfth transistor Q12 is connected to the second current source I2, and the base of the twelfth transistor Q12 is short-circuited to its collector. The emitter of the twelfth transistor Q12 is connected to one end of the second resistor R2. One end of the second resistor R2 is also connected to the base of the eighth transistor Q8. The other end of the second resistor R2 is connected to the voltage source VCC. The base of the twelfth transistor Q12 is connected to the base of the eleventh transistor Q11. The collector of the eleventh transistor Q11 is the output end of the second current mirror unit 42. The collector of the eleventh transistor Q11 is also connected to the emitter of the second transistor Q2 and the base of the fourth transistor Q4. The emitter of the eleventh transistor Q11 is connected to the voltage source VCC;

[0058] It should be noted that the values of the first resistor R1 and the second resistor R2 are relatively small. When driving a conventional load, the above-mentioned first sampling current and second sampling current are relatively small. Therefore, the influence of the feedback circuit on the bias current is relatively small. At this time, the power consumption of the radiation-resistant power output stage circuit 100 based on the complementary bipolar process is not much different from that without adding the feedback circuit. Therefore, compared with the scheme of increasing the bias current, the embodiment of the present invention can better adapt to various application scenarios of the circuit.

[0059] In a preferred implementation, the ninth transistor Q9 and the tenth transistor Q10 are NPN transistors, and the eleventh transistor Q11 and the twelfth transistor Q12 are PNP transistors.

[0060] In practical applications, an ideal operational amplifier should have the characteristics of infinite load-carrying capacity and zero output impedance. Due to non-ideal factors in the manufacturing process, the output impedance of the circuit is not zero. This phenomenon will cause the operating state of the device to change when the circuit drives a large load. In addition, radiation damage will cause the current gain of the device to decrease. Radiation damage will cause the transistor collector to output less current under the same base current bias condition, resulting in a problem of reduced driving ability. Based on this, Figure 3 The anti-radiation power output stage circuit 100 based on the complementary bipolar process shown in the figure has the following working principle: When there is radiation damage in the application scenario, the current gains of the third transistor Q3 and the fourth transistor Q4 decrease, and the output current requirements of the output terminal VOUT for the sixth transistor Q6 and the seventh transistor Q7 increase; when the application scenario has the requirement of driving a large load, the output current requirements of the output terminal VOUT of the Class AB output module 10 for the sixth transistor Q6 and the seventh transistor Q7 increase. At this time, the functions of the first resistor R1 and the second resistor R2 in the feedback module 30 will cause the emitter voltages of the twelfth transistor Q12 and the tenth transistor Q10 in the bias module 40 to rise. According to the circuit relationship, the base currents of the third transistor Q3 and the fourth transistor Q4 in the Class AB output module 10 increase, ultimately improving the driving ability of the Class AB output module 10.

[0061] Exemplarily, when the circuit is under the conditions of radiation damage or driving a large load, the output current requirements of the output terminal VOUT of the Class AB output module 10 for the sixth transistor Q6 and the seventh transistor Q7 increase. The base currents output by the sixth transistor Q6 and the seventh transistor Q7 are restored to the base current after passing through the fifth transistor Q5 and the eighth transistor Q8 to complete the sampling. At this time, the magnitudes of the currents output by the first sampling unit 21 and the second sampling unit 22, that is, the currents output based on the fifth transistor Q5 and the eighth transistor Q8 are:

[0062]

[0063] where, I Sample，Q8 and I Sample，Q5 are the sampling currents, I Q8 is the current passing through the eighth transistor, I Q5Let \(I\) be the current passing through the fifth transistor and \(\beta\) be the device current gain. According to the above formula, it can be seen that to increase the driving current of the circuit, the circuit can be achieved by increasing the circuit gain and the bias current. However, according to the above text, in the scenario applicable to the embodiments of the present invention, the circuit gain will decrease. On the one hand, the driving ability of the circuit is insufficient when driving a large load, and on the other hand, there is a large power consumption when driving a small load. Therefore, in the embodiments of the present invention, the sampling current is fed back to the first resistor \(R1\) and the second resistor \(R2\) in the feedback module 30 to change the emitter voltage of the tenth transistor \(Q10\) and the twelfth transistor \(Q12\) in the bias module 40. At this time, the emitter voltages of the tenth transistor \(Q10\) and the twelfth transistor \(Q12\) are:

[0064] V E,Q10 =(I1 + I Sample,Q5 )*R1

[0065] V E,Q12 =(I2 + I Sample,Q8 )*R2

[0066] Under the action of the first current mirror and the second current mirror in the bias module 40, the tenth transistor \(Q10\) and the twelfth transistor \(Q12\) bias the ninth transistor \(Q9\) and the eleventh transistor \(Q11\) respectively. According to the diode volt-ampere characteristic, when the \(V_{BE}\) voltage increases, the forward conduction current of the PN junction is:

[0067]

[0068] where \(I\) S is the reverse saturation current of the PN junction, \(V\) BE is the base-emitter voltage, and \(U\) T is the thermal voltage. Therefore, when the \(V_{BE}\) voltages of the ninth transistor \(Q9\) and the eleventh transistor \(Q11\) increase, the collector output current of the triode increases, and the driving ability of the third transistor \(Q3\) and the fourth transistor \(Q4\) in the Class AB output module 10 increases. The circuit realizes the dynamic adjustment of the bias current according to the magnitude of the output current, responds to the load change, and dynamically adjusts the compensation amount for compensation. At the same time, it solves the problem of insufficient flexibility when improving the driving ability of the existing radiation-resistant power output stage circuit based on the complementary bipolar process, resulting in waste of resources.

[0069] Based on Figure 3 the radiation-resistant power output stage circuit 100 based on the complementary bipolar process shown, as Figure 5As shown in the figure, in the embodiment of the present invention, the overcurrent protection circuit includes a third resistor R3, a fourth resistor R4, a thirteenth transistor Q13, and a fourteenth transistor Q14; one end of the third resistor R3 is connected to the output terminal VOUT of the Class AB output module 10 and the emitter of the thirteenth transistor Q13, and the other end of the third resistor R3 is connected to the emitter of the sixth transistor Q6, the emitter of the third transistor Q3, and the base of the thirteenth transistor Q13. The collector of the thirteenth transistor Q13 is connected to the base of the sixth transistor Q6, the collector of the ninth transistor Q9, and the emitter of the first transistor Q1; one end of the fourth resistor R4 is connected to the output terminal VOUT of the Class AB output module 10 and the emitter of the fourteenth transistor Q14, and the other end of the fourth resistor R4 is connected to the emitter of the seventh transistor Q7, the emitter of the fourth transistor Q4, and the base of the fourteenth transistor Q14. The collector of the fourteenth transistor Q14 is connected to the base of the fourth transistor Q4, the emitter of the second transistor Q2, and the collector of the eleventh transistor Q11.

[0070] In a preferred implementation, the thirteenth transistor Q13 is a PNP transistor, and the fourteenth transistor Q14 is an NPN transistor.

[0071] The working principle of the overcurrent protection circuit is as follows:

[0072] When the output current is large, the voltage drops of the third resistor R3 and the fourth resistor R4 increase, causing the thirteenth transistor Q13 and the fourteenth transistor Q14 to conduct forward. At the same time, the BC junctions of the thirteenth transistor Q13 and the fourteenth transistor Q14 are respectively connected to the BE junctions of the third transistor Q3 and the fourth transistor Q4 in the Class AB output module 10, resulting in reverse bias of the BC junctions of the thirteenth transistor Q13 and the fourteenth transistor Q14. The thirteenth transistor Q13 and the fourteenth transistor Q14 form forward amplification. A part of the base bias currents of the third transistor Q3, the fourth transistor Q4, and the sixth transistor Q6 and the seventh transistor Q7 in the sampling module 20 flows away through the thirteenth transistor Q13 and the fourteenth transistor Q14, thereby reducing the magnitude of the output current and realizing the overcurrent protection function.

[0073] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention and are not intended to limit them. Although the present invention has been described in detail with reference to the preferred embodiments, those of ordinary skill in the art should understand that the technical solutions of the present invention can be modified or equivalently replaced without departing from the purpose and scope of the technical solutions of the present invention, and they should all be covered by the scope of the claims of the present invention.

Claims

1. A radiation-resistant power output stage circuit based on a complementary bipolar process, characterized in that, Comprising: A Class AB output module, a sampling module, a feedback module, and a bias module with a left-right symmetric design; The sampling module samples the output terminal of the Class AB output module and transmits the sampling result to the feedback module, and the feedback module drives the bias module according to the sampling result to adjust the bias current provided to the Class AB output module.

2. The radiation-resistant power output stage circuit based on the complementary bipolar process according to claim 1, characterized in that The Class AB output module includes a first amplification unit and a second amplification unit, and the first amplification unit and the second amplification unit are in a complementary push-pull structure.

3. The radiation-resistant power output stage circuit based on a complementary bipolar process according to claim 2, wherein The sampling module includes a first sampling unit and a second sampling unit; The first sampling unit samples between the first amplification unit and the output terminal of the Class AB output module to obtain a first sampling current, and the second sampling unit samples between the second amplification unit and the output terminal of the Class AB output module to obtain a second sampling current, and the first sampling unit and the second sampling unit include complementary bipolar transistors.

4. The radiation-resistant power output stage circuit based on the complementary bipolar process according to claim 3, wherein The feedback module includes a first feedback unit and a second feedback unit; The first feedback unit is connected to the bias module and the first sampling unit, and converts the first sampling current into a first sampling voltage; the second feedback unit is connected to the bias module and the second sampling unit, and converts the second sampling current into a second sampling voltage.

5. The radiation-resistant power output stage circuit based on the complementary bipolar process according to claim 4, wherein The bias module includes a first current mirror unit and a second current mirror unit; The input terminal of the first current mirror unit is connected to the first feedback unit, and the output terminal of the first current mirror unit is connected to the input terminal of the first amplification unit; the input terminal of the second current mirror unit is connected to the second feedback unit, and the output terminal of the second current mirror unit is connected to the input terminal of the second amplification unit; The first sampling voltage changes the input terminal voltage of the first current mirror unit, adjusts the output terminal voltage of the first current mirror unit, so as to adjust the bias current provided to the first amplification unit; the second sampling voltage changes the input terminal voltage of the second current mirror unit, adjusts the output terminal voltage of the second current mirror unit, so as to adjust the bias current provided to the second amplification unit.

6. The radiation-resistant power output stage circuit based on a complementary bipolar process according to any one of claims 1 to 5, characterized in that It further includes an overcurrent protection module; The overcurrent protection module is arranged at the output terminal of the Class AB output module.

7. The radiation-resistant power output stage circuit based on a complementary bipolar process according to claim 6, wherein The Class AB output module includes a first transistor, a second transistor, a third transistor, and a fourth transistor; The first transistor and the third transistor are the first amplification unit, and the second transistor and the fourth transistor are the second amplification unit; The bases of the first transistor and the second transistor are both connected to the input terminal of the Class AB output module. The emitter of the first transistor is connected to the base of the third transistor, and the emitter of the first transistor is also connected to the bias module. The collector of the third transistor is grounded. The emitter of the second transistor is connected to the base of the fourth transistor, and the emitter of the second transistor is also connected to the bias module. The collector of the second transistor is grounded. The output terminal of the Class AB output module is included between the emitters of the third transistor and the fourth transistor. The first transistor and the third transistor are NPN transistors, and the second transistor and the fourth transistor are PNP transistors.

8. The radiation-resistant power output stage circuit based on a complementary bipolar process according to claim 7, wherein The sampling module includes a fifth transistor, a sixth transistor, a seventh transistor, and an eighth transistor. The fifth transistor and the sixth transistor form a first sampling unit, and the seventh transistor and the eighth transistor form a second sampling unit. The emitter of the sixth transistor is connected to the emitter of the third transistor and the output terminal of the Class AB output module. The collector of the sixth transistor is connected to the emitter of the fifth transistor. The collector of the fifth transistor is grounded. The base of the fifth transistor is connected to the sampling module. The base of the sixth transistor is connected to the emitter of the first transistor. The emitter of the seventh transistor is connected to the emitter of the fourth transistor and the output terminal of the Class AB output module. The collector of the seventh transistor is connected to the emitter of the eighth transistor. The collector of the eighth transistor is connected to a voltage source. The base of the seventh transistor is connected to the emitter of the second transistor. The base of the eighth transistor is connected to the sampling module. The fifth transistor and the sixth transistor are PNP transistors, and the seventh transistor and the eighth transistor are NPN transistors.

9. The radiation-resistant power output stage circuit based on the complementary bipolar process according to claim 8, wherein, The feedback module includes a first resistor and a second resistor. The first resistor is a first feedback unit, and the second resistor is a second feedback unit. The bias module includes a ninth transistor, a tenth transistor, an eleventh transistor, a twelfth transistor, a first current source, and a second current source. The ninth transistor and the tenth transistor form a first current mirror unit, and the eleventh transistor and the twelfth transistor form a second current mirror unit. The collector of the tenth transistor is the input terminal of the first current mirror unit, connected to the first current source, and the collector and base of the tenth transistor are shorted. The emitter of the tenth transistor is connected to one end of the first resistor, and one end of the first resistor is also connected to the base of the fifth transistor. The other end of the first resistor is grounded. The base of the tenth transistor is connected to the base of the ninth transistor. The collector of the ninth transistor is the output terminal of the first current mirror unit, and the collector of the ninth transistor is also connected to the emitter of the first transistor and the base of the third transistor. The emitter of the ninth transistor is grounded; The emitter of the twelfth transistor is the input terminal of the second current mirror unit. The collector of the twelfth transistor is connected to the second current source, and the base of the twelfth transistor is shorted to its collector. The emitter of the twelfth transistor is connected to one end of the second resistor, and one end of the second resistor is also connected to the base of the eighth transistor. The other end of the second resistor is connected to a voltage source. The base of the twelfth transistor is connected to the base of the eleventh transistor. The collector of the eleventh transistor is the output terminal of the second current mirror unit, and the collector of the eleventh transistor is also connected to the emitter of the second transistor and the base of the fourth transistor. The emitter of the eleventh transistor is connected to a voltage source; The ninth transistor and the tenth transistor are NPN transistors, and the eleventh transistor and the twelfth transistor are PNP transistors.

10. The radiation-resistant power output stage circuit based on a complementary bipolar process according to claim 9, wherein The overcurrent protection circuit includes a third resistor, a fourth resistor, a thirteenth transistor, and a fourteenth transistor; One end of the third resistor is connected to the output terminal of the Class AB output module and the emitter of the thirteenth transistor. The other end of the third resistor is connected to the emitter of the sixth transistor, the emitter of the third transistor, and the base of the thirteenth transistor. The collector of the thirteenth transistor is connected to the base of the sixth transistor, the collector of the ninth transistor, and the emitter of the first transistor; One end of the fourth resistor is connected to the output terminal of the Class AB output module and the emitter of the fourteenth transistor. The other end of the fourth resistor is connected to the emitter of the seventh transistor, the emitter of the fourth transistor, and the base of the fourteenth transistor. The collector of the fourteenth transistor is connected to the base of the fourth transistor, the emitter of the second transistor, and the collector of the eleventh transistor; The thirteenth transistor is a PNP transistor, and the fourteenth transistor is an NPN transistor.

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