Semiconductor device and manufacturing method thereof

Abstract

A semiconductor device includes a carrier, a plurality of wall structures, a first barrier layer, a filling material and a second barrier layer. The carrier plate is made of a first material. The plurality of wall-shaped structures are arranged on the carrier plate, the wall-shaped structures are made of a second material, and the first material is different from the second material. The first barrier layer covers the upper surface of the carrier plate and a plurality of side walls of the wall-shaped structure. The filling material is arranged on the first barrier layer and between the adjacent wall-shaped structures, and the compatibility between the filling material and the first barrier layer is superior to the compatibility between the filling material and the carrier plate or the compatibility between the filling material and the wall-shaped structures. A second barrier layer is on the fill material. The filling material is only in contact with the first barrier layer, so that the filling material with relatively high compatibility with the first barrier layer can be prepared according to the surface characteristics of the first barrier layer, and the problem of compatibility between the filling material and more than two materials does not need to be considered.

Description

Technical Field

[0001] This disclosure relates to a semiconductor device and a method of manufacturing the same, and more particularly to a semiconductor device including a barrier layer and a method of manufacturing the same. Background Art

[0002] In today's technological field, filling materials with different functions are used in many places. For example, filling materials can be used for different purposes such as encapsulation, wavelength conversion layers, etc. Filling materials for different purposes can be achieved by mixing functional substances in the filling materials. These functional substances are easily affected by moisture, oxygen, or other external substances and lose their functions. Therefore, the filling materials must be properly protected to maintain their functionality. Summary of the Invention

[0003] In some embodiments of this disclosure, a semiconductor device includes a carrier substrate, a plurality of wall-like structures, a first barrier layer, a filling material, and a second barrier layer. The carrier substrate is made of a first material. The plurality of wall-like structures are arranged on the carrier substrate. The wall-like structures are made of a second material, and the first material is different from the second material. The first barrier layer covers the upper surface of the carrier substrate and the sidewalls of the wall-like structures. The filling material is on the first barrier layer and between adjacent wall-like structures. The compatibility between the filling material and the first barrier layer is better than the compatibility between the filling material and the carrier substrate or the compatibility between the filling material and the wall-like structures. The second barrier layer is on the filling material.

[0004] In some embodiments, the first barrier layer extends from the bottom surface of the filling material to the side surface of the filling material.

[0005] In some embodiments, the first barrier layer further extends to the upper surface of the wall-like structures, and the second barrier layer further covers the first barrier layer extending to the upper surface of the wall-like structures.

[0006] In some embodiments, the carrier substrate is one of a hydrophobic material and a hydrophilic material, and the wall-like structures are the other of the hydrophobic material and the hydrophilic material.

[0007] In some embodiments, the first barrier layer includes at least two barrier sub-layers stacked.

[0008] In some embodiments, the compatibility between the barrier sub-layer in contact with the filling material and the filling material is better than the compatibility between the filling material and the carrier substrate or the compatibility between the filling material and the wall-like structures.

[0009] In some embodiments, the filling material includes quantum dots.

[0010] In some embodiments of the present disclosure, a method of manufacturing a semiconductor device includes providing a carrier substrate made of a first material, forming a plurality of wall-like structures on the carrier substrate, the wall-like structures being made of a second material different from the first material, and the wall-like structures and the carrier substrate defining a groove, forming a first barrier layer on the carrier substrate and the wall-like structures, the first barrier layer conformally covering the carrier substrate and the wall-like structures, filling the groove with a filling material, wherein the compatibility between the filling material and the first barrier layer is better than the compatibility between the filling material and the carrier substrate or the compatibility between the filling material and the wall-like structures, and forming a second barrier layer on the filling material.

[0011] In some embodiments, the carrier substrate is one of a hydrophobic material and a hydrophilic material, and the wall-like structure is the other of the hydrophobic material and the hydrophilic material.

[0012] In some embodiments, the first barrier layer includes at least two barrier sub-layers stacked.

[0013] In summary, the first barrier layer and the second barrier layer of the semiconductor device according to some embodiments of the present disclosure completely cover the filling material, preventing water vapor, oxygen, or other external substances from entering the filling material to damage the filling material. Additionally, the first barrier layer can be formed between the filling material and two other different materials. In this way, the filling material only contacts the first barrier layer, and a filling material with a higher compatibility with the first barrier layer can be formulated according to the surface characteristics of the first barrier layer, without considering the compatibility problem between the filling material and more than two materials. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] Figure 1 It is a cross-sectional view showing a semiconductor device according to some embodiments of the present disclosure.

[0015] Figures 2 to 6 It is a cross-sectional view showing a manufacturing method of a semiconductor device according to some embodiments of the present disclosure.

[0016] Figure 7 It is a view showing an application method including a semiconductor device according to some embodiments of the present disclosure. DETAILED DESCRIPTION

[0017] Some embodiments of the present disclosure can be used to solve the problem of different compatibilities between a filling material and different material layers it contacts in a semiconductor device. For example, the compatibility between a filling material and different material layers is not the same, so it is not easy to find a filling material that has a high compatibility with multiple material layers at the same time. In some embodiments of the present disclosure, the above problem can be solved. Some embodiments of the present disclosure can be applied to any semiconductor device having the above problem.

[0018] Figure 1A cross-sectional view of a semiconductor device 100 showing some embodiments of the present disclosure. The semiconductor device 100 includes a carrier plate 110, a plurality of wall-like structures 120, a first barrier layer 130, a filling material 140, and a second barrier layer 150. The carrier plate 110 is made of a first material. The wall-like structures 120 are arranged on the carrier plate 110. The wall-like structures 120 are made of a second material, and the first material is different from the second material. The first barrier layer 130 covers the upper surface 110T of the carrier plate 110 and the side walls 120S of the wall-like structures 120. The filling material 140 is on the first barrier layer 130 and between adjacent wall-like structures 120. The second barrier layer 150 is on the filling material 140. In other words, the filling material 140 is completely covered by the first barrier layer 130 and the second barrier layer 150. Therefore, the first barrier layer 130 and the second barrier layer 150 can prevent moisture, oxygen, or other substances from entering the filling material 140, thereby preventing the filling material 140 or the materials inside it from deteriorating. In some embodiments, the first barrier layer 130 extends from the upper surface 110T of the carrier plate 110 to the side walls 120S of the wall-like structures 120 and from the side walls 120S of the wall-like structures 120 to the upper surface 120T of the wall-like structures 120. Alternatively, the first barrier layer 130 extends from the bottom surface of the filling material 140 to the side surface of the filling material 140 and further to the upper surface 120T of the wall-like structures 120. The second barrier layer 150 extends from the filling material 140 to the upper surface 120T of the wall-like structures 120, and the first barrier layer 130 contacts the second barrier layer 150. The first barrier layer 130 contacts the upper surface of the filling material 140. Therefore, the filling material 140 can be more completely covered, making it less likely for the filling material 140 or the materials inside it to deteriorate.

[0019] The first barrier layer 130 can further improve the problem that the filling material 140 is not easy to manufacture due to different compatibilities between the filling material 140 and the carrier board 110 and the wall structure 120. Specifically, the carrier board 110 and the wall structure 120 are made of different materials, and the first material corresponding to the carrier board 110 and the second material corresponding to the wall structure 120 have relative compatibilities. Therefore, the compatibilities of the filling material 140 with respect to the carrier board 110 and the wall structure 120 are different. The term "compatibility" here refers to the degree of adaptation between two different materials. For example, when one material is a hydrophilic material and the other material is a hydrophobic material, the compatibilities of the two materials are relatively high (there is an adsorption between the two materials). When both materials are hydrophilic materials, the compatibilities of the two materials are relatively low. Or, when both materials are hydrophobic materials, the compatibilities of the two materials are relatively low (there is a certain repulsion between the two materials). In this disclosure, the carrier board 110 is one of a hydrophobic material and a hydrophilic material, and the wall structure 120 is the other of a hydrophobic material and a hydrophilic material. For example, in one embodiment, the carrier board 110 is a hydrophobic material and the wall structure 120 is a hydrophilic material. When the filling material 140 is a hydrophobic material, the filling material 140 and the carrier board 110 have low compatibility, while and the wall structure 120 have high compatibility. Conversely, when the filling material 140 is a hydrophilic material, the filling material 140 and the carrier board 110 have high compatibility, while and the wall structure 120 have low compatibility. In this way, if the filling material 140 contacts both the carrier board 110 and the wall structure 120 (hydrophobic and hydrophilic respectively), it is relatively difficult to select a filling material 140 that has high compatibility with both the carrier board 110 and the wall structure 120.

[0020] Therefore, in this disclosure, the first barrier layer 130 is formed between the filling material 140 and the carrier board 110 and between the filling material 140 and the wall structure 120, so that the filling material 140 only contacts a single material. In this way, the filling material 140 can be formulated according to the surface characteristics of the first barrier layer 130, and there is no need to consider the compatibility problem between the filling material 140 and more than two materials. That is to say, the compatibility between the filling material 140 and the first barrier layer 130 is better than the compatibility between the filling material 140 and the carrier board 110 or the compatibility between the filling material 140 and the wall structure 120. In some embodiments, the first barrier layer 130 is a hydrophobic material and the filling material 140 is a hydrophilic material, then the two have high compatibility. In other embodiments, the first barrier layer 130 is a hydrophilic material and the filling material 140 is a hydrophobic material, then the two have high compatibility.

[0021] According to another embodiment of the present disclosure, the first barrier layer 130 includes at least two barrier sub-layers stacked on each other. For example, the first barrier layer further includes a first barrier sub-layer and a second barrier sub-layer. The first barrier sub-layer covers the upper surface 110T of the carrier plate 110 and the side wall 120S of the wall-shaped structure 120, can extend from the upper surface 110T of the carrier plate 110 to the side wall 120S of the wall-shaped structure 120, and extend from the side wall 120S of the wall-shaped structure 120 to the upper surface 120T of the wall-shaped structure 120. The second barrier sub-layer covers the first barrier sub-layer. Optionally, the second barrier sub-layer can conformally cover the first barrier sub-layer. The compatibility between the filling material 140 and the second barrier sub-layer 134 is better than the compatibility between the filling material 140 and the carrier plate 110 or the compatibility between the filling material 140 and the wall-shaped structure 120. In embodiments where the number of sub-layers of the first barrier layer 130 is 3 or more, the compatibility between the barrier sub-layer in contact with the filling material 140 and the filling material 140 is better than the compatibility between the filling material 140 and the carrier plate 110 or the compatibility between the filling material 140 and the wall-shaped structure 120. The definition of compatibility has been discussed above, so it will not be repeated here. According to some embodiments of the present invention, the barrier layer can be made of materials such as SiO2, SiO x , Al2O3, AlO x , SiN x , Ga2O3, ZnO, AlTiO, ZnAlO, etc. In addition, when further considering the refractive index of the barrier layer, the barrier layer with a high refractive index can be made of materials such as ZrO2, HfO2, Ta2O5, TiO2, Nb2O5, Ta2O5, Ga2O3, GaN, ZnO, etc.; the barrier layer with a low refractive index can be made of materials such as MgO, MgF2, CaF2, SiO2, Al2O3, etc.

[0022] Figures 2 to 6 FIG. is a cross-sectional view showing a manufacturing method of a semiconductor device according to some embodiments of the present disclosure. Referring to Figure 2 , a carrier plate 110 is provided. The carrier plate 110 can be made of a first material. Then, referring to Figure 3 , a plurality of wall-shaped structures 120 are formed on the carrier plate 110. The wall-shaped structures 120 are made of a second material, and the first material is different from the second material. In some embodiments, a material layer can be first formed on the carrier plate 110, and then the material layer is etched to form the wall-shaped structures 120. The wall-shaped structures 120 and the carrier plate 110 define a groove R. The aspect ratio of the groove R can be determined according to the actual situation. In some embodiments, the groove R can have an aspect ratio of about 1:1 as in Figure 3 . However, the present disclosure does not limit the aspect ratio of the groove R. In some embodiments, the groove R can also have a high aspect ratio.

[0023] Reference Figure 4 , then, in some embodiments (corresponding to the embodiments in which the first barrier layer 130 includes one barrier sub-layer), the first barrier layer 130 is formed on the carrier plate 110 and the wall-shaped structure 120, and the first barrier layer 130 conformally covers the carrier plate 110 and the wall-shaped structure 120. In some embodiments, the first barrier layer 130 can be formed by atomic layer deposition (ALD). The first barrier layer 130 can extend from the upper surface 110T of the carrier plate 110 to the side wall 120S of the wall-shaped structure 120, and from the side wall 120S of the wall-shaped structure 120 to the upper surface 120T of the wall-shaped structure 120. In some embodiments, the wall-shaped structure 120 is completely covered by the first barrier layer 130.

[0024] In other embodiments (corresponding to the embodiments in which the first barrier layer 130 includes more than 2 barrier sub-layers), the first barrier layer 130 can also be formed on the carrier plate 110 and the wall-shaped structure 120. Forming the first barrier layer 130 includes forming a first barrier sub-layer on the carrier plate 110 and the wall-shaped structure 120, and forming a second barrier sub-layer on the first barrier sub-layer. The first barrier sub-layer can extend from the upper surface 110T of the carrier plate 110 to the side wall 120S of the wall-shaped structure 120, and from the side wall 120S of the wall-shaped structure 120 to the upper surface 120T of the wall-shaped structure 120. The second barrier sub-layer then conformally covers the first barrier sub-layer. The first barrier sub-layer and the second barrier sub-layer are formed of different materials. In some embodiments, the first barrier sub-layer and the second barrier sub-layer of the first barrier layer 130 can be formed by atomic layer deposition (ALD).

[0025] Reference Figure 5 , in the groove R (reference Figure 3)The interior is filled with a filling material 140, where the compatibility between the filling material 140 and the first barrier layer 130 is better than the compatibility between the filling material 140 and the carrier substrate 110 or the compatibility between the filling material 140 and the wall-shaped structure 120. Specifically, the filling material 140 can be a photoresist, a glue material, or other substances. Without the presence of the first barrier layer 130, the filling material 140 contacts both the carrier substrate 110 and the wall-shaped structure 120 simultaneously. The compatibility between the filling material 140 and the carrier substrate 110 and the compatibility between the filling material 140 and the wall-shaped structure 120 may vary greatly. For example, the carrier substrate 110 may be a hydrophobic material, while the wall-shaped structure 120 may be a hydrophilic material, or the carrier substrate 110 may be a hydrophilic material, while the wall-shaped structure 120 may be a hydrophobic material. Therefore, it is difficult to formulate a filling material 140 that has high compatibility with both the carrier substrate 110 and the wall-shaped structure 120. Thus, in the present disclosure, since the filling material 140 only contacts the first barrier layer 130, the filling material 140 can be formulated only for the material of the first barrier layer 130, and a filling material 140 with higher compatibility with the first barrier layer 130 can be formed.

[0026] Reference Figure 6 , a second barrier layer 150 is formed on the filling material 140. In some embodiments, the second barrier layer 150 can be formed by atomic layer deposition (ALD). The filling material 140 can further extend above the first barrier layer 130 and contact the first barrier layer 130. In this way, the filling material 140 can be completely coated by the first barrier layer 130 and the second barrier layer 150. Therefore, the first barrier layer 130 and the second barrier layer 150 can isolate water vapor, oxygen, or external substances from entering the filling material 140. In some embodiments, the first barrier layer 130 and the second barrier layer 150 can be made of the same material. In other embodiments, the first barrier layer 130 and the second barrier layer 150 can be made of different materials.

[0027] Figure 7 To illustrate the application modes of some embodiments of the present disclosure including the semiconductor device 100. Figure 7 It is a display 200. The display 200 can include a carrier substrate 210, conductive pads 220, light-emitting diode wafers 230, an encapsulation glue layer 240, and the semiconductor device 100. The conductive pads 220 are arranged on the carrier substrate 210. The light-emitting diode wafers 230 are on the conductive pads 220, and the conductive pads 220 are used to provide an electrical connection between the light-emitting diode wafers 230 and the carrier substrate 210. The encapsulation glue layer 240 surrounds the conductive pads 220 and the light-emitting diode wafers 230. The semiconductor device 100 is disposed on the light-emitting diode wafers 230.

[0028] In Figure 7In an embodiment, the carrier substrate 110 may be an LED substrate, and the carrier substrate 110 is connected to the light-emitting diode chip 230. The materials of the carrier substrate 110 and the light-emitting diode chip 230 may be the same. In some embodiments, the carrier substrate 110 may be made of gallium nitride (GaN). The filling material 140 may further include a first filling material 140A, a second filling material 140B, and a third filling material 140C, which are respectively arranged corresponding to different light-emitting diode chips 230. The first filling material 140A, the second filling material 140B, and the third filling material 140C may be a wavelength conversion layer or a glue layer, and may contain photoresist or further contain quantum dots in the photoresist. In some embodiments, at least one of the first filling material 140A, the second filling material 140B, and the third filling material 140C may contain quantum dots. For example, the first filling material 140A and the second filling material 140B may contain quantum dots, while the third filling material 140C may not contain quantum dots. The wall-type structure 120 may be a highly reflective metal layer. The first filling material 140A, the second filling material 140B, and the third filling material 140C are respectively arranged on different light-emitting diode chips 230, and the wall-type structure 120 surrounds the first filling material 140A, the second filling material 140B, and the third filling material 140C respectively. When the light-emitting diode chip 230 emits light, the light can pass through the carrier substrate 110 to reach the first filling material 140A, the second filling material 140B, and the third filling material 140C, and is converted into light with different wavelengths by the quantum dots in the first filling material 140A, the second filling material 140B, and the third filling material 140C. For example, when the light-emitting diode chip 230 is a blue light-emitting diode chip, the first filling material 140A is a red wavelength conversion layer, the second filling material 140B is a green wavelength conversion layer, and the third filling material 140C is a glue layer, the first filling material 140A can convert the blue light emitted by the light-emitting diode chip 230 into red light, the second filling material 140B can convert the blue light emitted by the light-emitting diode chip 230 into green light, and the third filling material 140C can directly allow the blue light emitted by the light-emitting diode chip 230 to directly pass through the third filling material 140C without any wavelength conversion. The wall-type structure 120 can reflect the wavelength-converted light, so that the light can maintain upward light emission. When the filling material 140 contains quantum dots for wavelength conversion, since quantum dots are easily damaged by moisture, oxygen, or other external substances, when the first barrier layer 130 and the second barrier layer 150 completely cover the upper surface, side walls, and lower surface of the filling material 140, the first barrier layer 130 and the second barrier layer 150 can prevent moisture, oxygen, or other external substances from entering the filling material 140 and damaging the quantum dots.In some embodiments, the first barrier layer 130 and the second barrier layer 150 are layers that are transmissive to light, such as an alumina layer. Thus, even if the first barrier layer 130 is between the light-emitting diode wafer 230 and the first filling material 140A, the second filling material 140B, and the third filling material 140C, and the second barrier layer 150 is on the first filling material 140A, the second filling material 140B, and the third filling material 140C, the light emitted by the light-emitting diode wafer 230 can still exit through the first barrier layer 130, the filling materials 140A, 140B, and 140C, and the second barrier layer 150, without affecting the light output of the display 200.

[0029] According to another embodiment of the present invention, when the first barrier layer 130 has multiple sub-layers, the first barrier layer 130 can be further used as a distributed Bragg reflector (DBR).

[0030] In Figure 7 the embodiment, the carrier substrate 110 is made of gallium nitride (GaN) and is a hydrophobic material, and the wall-shaped structure 120 is made of a metal, such as aluminum, and is a hydrophilic material. If the filling material 140 is a hydrophilic material, it has a higher compatibility with the wall-shaped structure 120 but a lower compatibility with the carrier substrate 110. If the filling material 140 is a hydrophobic material, it has a lower compatibility with the wall-shaped structure 120 but a higher compatibility with the carrier substrate 110. If the first barrier layer 130 is covered on the carrier substrate 110 and the wall-shaped structure 120, a filling material 140 with a higher compatibility with the first barrier layer 130 can be formulated according to the surface characteristics of the first barrier layer 130. Therefore, the process of forming the semiconductor device 100 can be simplified. It should be noted that although Figure 7 taking a display as an example, however, the present disclosure is not limited to the application of a display, and any Figures 1 to 6 embodiment disclosed by

[0031] is protected by the present disclosure.

[0032] The above are only some embodiments of the present disclosure, not all embodiments. Any equivalent changes made by those of ordinary skill in the art to the technical solutions of the present disclosure by reading the specification of the present disclosure are covered by the claims of the present disclosure.

[0033]

Symbol Description

[0034] 100: Semiconductor device

[0035] 110: Carrier board

[0036] 110T: Upper surface

[0037] 120: Wall-type structure

[0038] 120S: Side wall

[0039] 120T: Upper surface

[0040] 130: First barrier layer

[0041] 140, 140A, 140B, 140C: Filling material

[0042] 150: Second barrier layer

[0043] 200: Display

[0044] 210: Carrier board

[0045] 220: Conductive pad

[0046] 230: Light-emitting diode chip

[0047] 240: Encapsulation glue layer

[0048] R: Groove.

Claims

1. A semiconductor device, characterized in that, Comprising: A carrier plate made of a first material; A plurality of wall-shaped structures arranged on the carrier plate, the plurality of wall-shaped structures being made of a second material, and the first material being different from the second material; A first barrier layer covering the upper surface of the carrier plate and the plurality of side walls of the plurality of wall-shaped structures; A filling material on the first barrier layer and between adjacent ones of the plurality of wall-shaped structures, wherein the compatibility between the filling material and the first barrier layer is better than the compatibility between the filling material and the carrier plate or the compatibility between the filling material and the plurality of wall-shaped structures; And A second barrier layer on the filling material.

2. The semiconductor device according to claim 1, wherein, Wherein the first barrier layer extends from the bottom surface of the filling material to the side surface of the filling material.

3. The semiconductor device according to claim 2, wherein Wherein the first barrier layer further extends to the upper surface of the plurality of wall-shaped structures, and the second barrier layer further covers the first barrier layer extending to the upper surface of the plurality of wall-shaped structures.

4. The semiconductor device according to claim 1, wherein Wherein the carrier plate is one of a hydrophobic material and a hydrophilic material, and the plurality of wall-shaped structures is the other of the hydrophobic material and the hydrophilic material.

5. The semiconductor device according to claim 1, wherein Wherein the first barrier layer comprises at least two barrier sub-layers stacked.

6. The semiconductor device according to claim 5, wherein, Wherein the compatibility between the barrier sub-layer in contact with the filling material and the filling material is better than the compatibility between the filling material and the carrier plate or the compatibility between the filling material and the plurality of wall-shaped structures.

7. The semiconductor device according to claim 1, wherein Wherein the filling material comprises quantum dots.

8. A method of manufacturing a semiconductor device, characterized in that, Comprising: Providing a carrier plate made of a first material; Forming a plurality of wall-shaped structures on the carrier plate, the plurality of wall-shaped structures being made of a second material, the first material being different from the second material, and the plurality of wall-shaped structures and the carrier plate defining a groove; Forming a first barrier layer on the carrier plate and the plurality of wall-shaped structures, the first barrier layer conformally covering the carrier plate and the plurality of wall-shaped structures; Filling the groove with a filling material, wherein the compatibility between the filling material and the first barrier layer is better than the compatibility between the filling material and the carrier plate or the compatibility between the filling material and the plurality of wall-shaped structures; And Forming a second barrier layer on the filling material.

9. The method according to claim 8, wherein Wherein the carrier plate is one of a hydrophobic material and a hydrophilic material, and the plurality of wall-shaped structures is the other of the hydrophobic material and the hydrophilic material.

10. The method according to claim 8, characterized in that, Wherein the first barrier layer comprises at least two barrier sub-layers stacked.

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